Patent application title: PHOTOMASK BLANK AND MANUFACTURING METHOD THEREOF
Inventors:
Souichi Fukaya (Niigata, JP)
Souichi Fukaya (Niigata, JP)
Assignees:
SHIN-ETSU CHEMICAL CO., LTD.
IPC8 Class: AG03F126FI
USPC Class:
430 5
Class name: Radiation imagery chemistry: process, composition, or product thereof radiation modifying product or process of making radiation mask
Publication date: 2014-05-01
Patent application number: 20140120460
Abstract:
An object of this invention is to provide a photomask blank in which
there is little warpage and is which an amount of warpage change after a
photomask manufacturing process ends is also small. First, a phase shift
film is deposited (S101), next, the phase shift film is subjected to a
heat treatment within a temperature range of 260° C. to
320° C. for four hours or more (S102), and thereafter a flash
irradiation treatment is performed thereon (S103). A light-shielding film
is deposited on the phase shift film after the aforementioned treatments
(S104), to thereby obtain a photomask blank (S105).Claims:
Description:
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