EGYPT NANOTECHNOLOGY CENTER Patent applications |
Patent application number | Title | Published |
20140196780 | PHOTOVOLTAIC DEVICES WITH AN INTERFACIAL BAND-GAP MODIFYING STRUCTURE AND METHODS FOR FORMING THE SAME - A Schottky-barrier-reducing layer is provided between a p-doped semiconductor layer and a transparent conductive material layer of a photovoltaic device. The Schottky-barrier-reducing layer can be a conductive material layer having a work function that is greater than the work function of the transparent conductive material layer. The conductive material layer can be a carbon-material layer such as a carbon nanotube layer or a graphene layer. Alternately, the conductive material layer can be another transparent conductive material layer having a greater work function than the transparent conductive material layer. The reduction of the Schottky barrier reduces the contact resistance across the transparent material layer and the p-doped semiconductor layer, thereby reducing the series resistance and increasing the efficiency of the photovoltaic device. | 07-17-2014 |
20140060642 | LIGHT-REFLECTING GRATING STRUCTURE FOR PHOTOVOLTAIC DEVICES - A photovoltaic cell includes an absorbing layer configured to generate electron-hole pairs from incident photons of incoming light; and a first grating layer arranged at a first surface of the absorbing layer which is opposite to a second surface of the absorbing layer from which light is incident, wherein the first grating layer includes at least one grating extending along the first surface, wherein the at least one grating has grating structures which are dimensioned to provide a reflectivity for light incident through the absorbing layer back into the absorbing layer. | 03-06-2014 |
20130255753 | PHOTOVOLTAIC THERMAL HYBRID SYSTEMS AND METHOD OF OPERATION THEREOF - A method is disclosed for operating a photovoltaic thermal hybrid system having a hybrid solar receiver with a photovoltaic module, operatively coupled to the system to deliver an electrical output power for a power user, a thermal collector distinct from the photovoltaic module, wherein the photovoltaic module and/or the thermal collector are movably mounted in the system, a collector thermal storage thermally connected to the thermal collector to store heat collected at the thermal collector, and a positioning mechanism adapted to move the photovoltaic module and/or the thermal collector. The method includes instructing the positioning mechanism to move the photovoltaic module and/or the thermal collector to change a ratio of an intensity of radiation received at the photovoltaic module to an intensity of radiation received at the thermal collector. | 10-03-2013 |
20130255752 | PHOTOVOLTAIC THERMAL HYBRID SOLAR RECEIVERS - A photovoltaic thermal hybrid solar receiver includes a thermal collector, extending in a first plane and comprising an aperture; and a photovoltaic module, configured for electrical output power delivery, comprising a photo-active area that extends in a second plane at a distance from the first plane, the photo-active area being vis-à-vis the aperture, a projection of the aperture perpendicularly to the second plane corresponding to the photo-active area. | 10-03-2013 |
20130164888 | Graphene Solar Cell - A solar cell includes a semiconductor portion, a graphene layer disposed on a first surface of the semiconductor portion, and a first conductive layer patterned on the graphene layer, the first conductive layer including at least one bus bar portion and a plurality of fingers extending from the at least one bus bar portion. | 06-27-2013 |
20130028823 | DOPED, PASSIVATED GRAPHENE NANOMESH, METHOD OF MAKING THE DOPED, PASSIVATED GRAPHENE NANOMESH, AND SEMICONDUCTOR DEVICE INCLUDING THE DOPED, PASSIVATED GRAPHENE NANOMESH - A method of making a semiconductor device, includes providing a graphene sheet, creating a plurality of nanoholes in the graphene sheet to form a graphene nanomesh, the graphene nanomesh including a plurality of carbon atoms which are formed adjacent to the plurality of nanoholes, passivating a dangling bond on the plurality of carbon atoms by bonding a passivating element to the plurality of carbon atoms, and doping the passivated graphene nanomesh by bonding a dopant to the passivating element. | 01-31-2013 |
20120282395 | Doped Carbon Nanotubes and Transparent Conducting Films Containing the Same - Transparent conducting electrodes include a doped single walled carbon nanotube film and methods for forming the doped single walled carbon nanotube (SWCNT) by solution processing. The method generally includes depositing single walled carbon nanotubes dispersed in a solvent and a surfactant onto a substrate to form a single walled carbon nanotube film thereon; removing all of the surfactant from the carbon nanotube film; and exposing the single walled carbon nanotube film to a single electron oxidant in a solution such that one electron is transferred from the single walled carbon nanotubes to each molecule of the single electron oxidant. | 11-08-2012 |
20120152352 | PHOTOVOLTAIC DEVICES WITH AN INTERFACIAL GERMANIUM-CONTAINING LAYER AND METHODS FOR FORMING THE SAME - A germanium-containing layer is provided between a p-doped silicon-containing layer and a transparent conductive material layer of a photovoltaic device. The germanium-containing layer can be a p-doped silicon-germanium alloy layer or a germanium layer. The germanium-containing layer has a greater atomic concentration of germanium than the p-doped silicon-containing layer. The presence of the germanium-containing layer has the effect of reducing the series resistance and increasing the shunt resistance of the photovoltaic device, thereby increasing the fill factor and the efficiency of the photovoltaic device. In case a silicon-germanium alloy layer is employed, the closed circuit current density also increases. | 06-21-2012 |
20120069338 | Graphene Optical Sensor - A method of using an optical sensor, the optical sensor comprising a sensing surface comprising graphene layer, the sensing surface located on a substrate, includes determining a first optical absorption spectrum for the graphene layer by a spectrophotometer; adding an analyte, the analyte selected to cause a shift in the first optical absorption spectrum, to the graphene layer; determining a second optical absorption spectrum for the modified graphene layer by a spectrophotometer; determining a shift between the first optical absorption spectrum and the second optical absorption spectrum; and determining a makeup of the analyte based on the determined shift. | 03-22-2012 |
20120031477 | PHOTOVOLTAIC DEVICES WITH AN INTERFACIAL BAND-GAP MODIFYING STRUCTURE AND METHODS FOR FORMING THE SAME - A Schottky-barrier-reducing layer is provided between a p-doped semiconductor layer and a transparent conductive material layer of a photovoltaic device. The Schottky-barrier-reducing layer can be a conductive material layer having a work function that is greater than the work function of the transparent conductive material layer. The conductive material layer can be a carbon-material layer such as a carbon nanotube layer or a graphene layer. Alternately, the conductive material layer can be another transparent conductive material layer having a greater work function than the transparent conductive material layer. The reduction of the Schottky barrier reduces the contact resistance across the transparent material layer and the p-doped semiconductor layer, thereby reducing the series resistance and increasing the efficiency of the photovoltaic device. | 02-09-2012 |
20120000521 | Graphene Solar Cell And Waveguide - A solar cell includes a semiconductor portion, a graphene layer disposed on a first surface of the semiconductor portion, and a first conductive layer patterned on the graphene layer, the first conductive layer including at least one bus bar portion, a plurality of fingers extending from the at least one bus bar portion, and a refractive layer disposed on the first conductive layer. | 01-05-2012 |
20120000516 | Graphene Solar Cell - A solar cell includes a semiconductor portion, a graphene layer disposed on a first surface of the semiconductor portion, and a first conductive layer patterned on the graphene layer, the first conductive layer including at least one bus bar portion and a plurality of fingers extending from the at least one bus bar portion. | 01-05-2012 |