Sophia School Corporation Patent applications |
Patent application number | Title | Published |
20130222482 | PIEZOELECTRIC ELEMENT, LIQUID DISCHARGE HEAD AND LIQUID DISCHARGE APPARATUS - The piezoelectric element includes, on a substrate: a piezoelectric film; and a pair of electrodes provided in contact with the piezoelectric film; in which the piezoelectric film contains a perovskite-type metal oxide represented by the general formula (1) as a main component: | 08-29-2013 |
20130127298 | PIEZOELECTRIC MATERIAL AND DEVICES USING THE SAME - Provided is a Bi-based piezoelectric material having good piezoelectric properties. The piezoelectric material includes a perovskite-type metal oxide represented by the following general formula (1): | 05-23-2013 |
20130022887 | Method for Generating Hydrogen, Method for Utilizing Hydrogen and Electric Generating System - Hydrogen is generated effectively with a small amount of electrolytic energy. Hydrogen is generated by electrolyzing liquid ammonia to which an electrolyte was added, and the generated hydrogen is reacted with oxygen to generate electricity. Since the electrolytic energy of liquid ammonia is small, a large amount of hydrogen can be generated effectively. The electric energy obtained from hydrogen generated by the electrolysis is greater than that required for the electrolysis of liquid ammonia. Therefore, great electric power can be utilized by converting the electric power obtained from small power source thereto. | 01-24-2013 |
20110169025 | SEMICONDUCTOR OPTICAL ELEMENT ARRAY AND METHOD OF MANUFACTURING THE SAME - The present invention provides a semiconductor optical element array including: a semiconductor substrate having a main surface in which a plurality of concave portions is formed; a mask pattern that is formed on the main surface of the semiconductor substrate and includes a plurality of opening portions provided immediately above the plurality of concave portions; a plurality of fine columnar crystals that is made of a group-III nitride semiconductor grown from the plurality of concave portions to the upper side of the mask pattern through the plurality of opening portions; an active layer that is grown on each of the plurality of fine columnar crystals; and a semiconductor layer covering each of the active layers. | 07-14-2011 |
20100252836 | GROUP-III NITRIDE STRUCTURE AND METHOD FOR PRODUCING A GROUP-III NITRIDE STRUCTURE - A group-III nitride structure includes a substrate | 10-07-2010 |
20100193910 | III NITRIDE STRUCTURE AND METHOD FOR MANUFACTURING III NITRIDE SEMICONDUCTOR FINE COLUMNAR CRYSTAL - A III nitride structure includes a film | 08-05-2010 |
20100040103 | SEMICONDUCTOR DEVICE - The present invention provides a semiconductor device including: a semiconductor layer including an n-type first cladding layer, an n-type second cladding layer, an active layer, a p-type first cladding layer, and a p-type second cladding layer in this order on an InP substrate. The n-type first cladding layer and the n-type second cladding layer satisfy formulas (1) to (4) below, or the p-type first cladding layer and the p-type second cladding layer satisfy formulas (5) to (8) below. | 02-18-2010 |
20080298415 | SEMICONDUCTOR DEVICE - A semiconductor device having high reliability, a long lifetime and superior light emitting characteristics by applying a novel material to a p-type cladding layer is provided. A semiconductor device includes a p-type semiconductor layer on an InP substrate, in which the p-type semiconductor layer has a laminate structure formed by alternately laminating a first semiconductor layer mainly including Be | 12-04-2008 |
20080247434 | SEMICONDUCTOR LIGHT-EMITTING DEVICE - A semiconductor light-emitting device capable of increasing the carrier concentration of a p-type cladding layer and improving light-emitting efficiency is provided. A semiconductor light-emitting device is made of a Group II-VI compound semiconductor, and the semiconductor light-emitting device includes an active layer between an n-type cladding layer and a p-type cladding layer, in which the active layer has a Type II superlattice structure, and the junctions between the active layer and the n-type cladding layer and between the active layer and the p-type cladding layer each have a Type I structure, and the p-type cladding layer includes tellurium (Te) as a Group VI element. | 10-09-2008 |