Class / Patent application number | Description | Number of patent applications / Date published |
204192110 | Ion beam sputter deposition | 72 |
20080202918 | Phase Plate For Phase-Contrast Electron Microscope, Method For Manufacturing the Same and Phase-Contrast Electron Microscope - A phase plate ( | 08-28-2008 |
20080210544 | METHOD FOR MANUFACTURING A MAGNETIC TUNNEL JUNCTION SENSOR USING ION BEAM DEPOSITION - A method for forming a MgO | 09-04-2008 |
20080257715 | Method of Deposition with Reduction of Contaminants in An Ion Assist Beam and Associated Apparatus - The invention relates to a dual Ion Beam Sputtering method for depositing onto a substrate (S) material generated by the sputtering of a target ( | 10-23-2008 |
20090020415 | "Iontron" ion beam deposition source and a method for sputter deposition of different layers using this source - The present invention discloses technology for thin film ion beam sputter deposition on a substrate. The apparatus is a self-contained ion beam deposition source, which can be attached to or positioned inside of a vacuum chamber where substrates are located. This source consists of one or more ion beam sources combined with one or more sputtering targets and a unified magnetic field acting as a devise controlling delivery of the charged particles to the treated by the Iontron workpiece (substrate). The ion beam emits ion beams toward the target that generate sputtered particles directed toward the substrate, thus creating a thin film on the surface of the substrate. The target can be electrically biased, not biased or floating, thus allowing for modulation of the location upon which the charged ions impinge the target. Additionally, the position of the target can be adjusted relatively to the ion beam. | 01-22-2009 |
20090038935 | THERMAL BARRIER COATING RESISTANT TO PENETRATION BY ENVIRONMENTAL CONTAMINANTS - A turbine engine component includes an electron beam-physical vapor deposition thermal barrier coating covering at least a portion of a substrate. The thermal barrier coating includes an inner layer having a columnar-grained microstructure with inter-columnar gap porosity. The inner layer includes a stabilized ceramic material. The thermal barrier coating also includes a substantially non-porous outer layer, covering the inner layer and including the stabilized ceramic material. The outer layer is deposited with continuous line-of-sight exposure to the vapor source under oxygen deficient conditions. The outer layer may further comprise a dopant oxide that is more readily reducible than the stabilized ceramic material. During deposition, the outer layer may also have an oxygen deficient stoichiometry with respect to the inner layer. Oxygen stoichiometry in the outer layer may be restored by exposure of the coated component to an oxidizing environment. | 02-12-2009 |
20090050469 | ALIGNMENT FILM FORMING APPARATUS AND METHOS - An alignment film forming apparatus and a method are provided to form an alignment film for a liquid crystal in a single process of simultaneously executing a film deposition process of ion beam sputtering and an alignment process. The method greatly restricts the size of a substrate. An alignment film forming apparatus includes a target disposed on a top surface side of a substrate and having a sputtering surface defining a sharp angle to the top surface of the substrate, a transfer table that transfers the substrate in a predetermined direction, and an ion source disposed on the top surface side of the substrate in such a way that an ion beam is irradiated on the sputtering surface of the target. An ion beam reflected at the sputtering surface is irradiated on a sputtering film formed on the substrate. The apparatus includes a mask disposed in such a way as to cover a part of the top surface of the substrate on an upstream side of a position where the sputtering film is formed, and a temperature regulator which regulates the temperature of the target. | 02-26-2009 |
20090050470 | Method And Device For Enhancing Solderability - A method and a device for enhancing the solderability of a lead-free component are provided. The provided method is compatible with the conventional soldering process and is capable of improving the wetting ability of the solder so as to enhance the solderability and the ability of anti-oxidation thereof. Besides, it is also achievable for providing a recognizable lead-free device so as to prevent the process confusion. | 02-26-2009 |
20090065348 | METHOD OF ARC ION PLATING AND TARGET FOR USE THEREIN - It is an object of the present invention to provide an arc ion plating method and a target used therein, capable of obtaining a uniform film thickness distribution substantially throughout the overall length of a work and also capable of improving the yield of the target material and reducing the manufacturing cost of the target. Within a vacuum chamber | 03-12-2009 |
20090071818 | FILM DEPOSITION APPARATUS AND METHOD OF FILM DEPOSITION - An ion beam sputtering film deposition apparatus is provided which can form a high-quality thin film that is dense, smooth and faultless. The film deposition apparatus has ion beam irradiating unit, a target | 03-19-2009 |
20090101493 | Oxide Sintered Body, Target, Transparent Conductive Film Obtained by Using the Same, and transparent Conductive Substrate - Provided are an oxide sintered body having zinc oxide as a main component and still more containing magnesium, a target obtained by processing the same, a transparent conductive film having excellent chemical resistance and low resistance, obtained by a direct-current sputtering method or an ion plating method by using the same, and a transparent conductive substrate. Provided are an oxide sintered body having zinc oxide and magnesium, wherein content of magnesium is from 0.02 to 0.30 as atom number ratio of Mg/(Zn+Mg); still more, an oxide sintered body having zinc oxide, magnesium, gallium and/or aluminum, wherein content of gallium and/or aluminum is over 0 and equal to or lower than 0.09 as atom number ratio of (Ga+Al)/(Zn+Ga+Al), and content of magnesium is from 0.02 to 0.30 as atom number ratio of Mg/(Zn+Ga+Al+Mg); a target obtained by processing these oxide sintered bodies; and a transparent conductive film formed on a substrate by a sputtering method or an ion plating method, by using this target. | 04-23-2009 |
20090127096 | Method for forming a corrugation multilayer - A method for forming a corrugation multilayer is provided. A periodic substrate is obtained, and then a corrugated reshaping layer is formed on the periodic substrate. The corrugated reshaping layer may be formed by an ion beam sputtering system and a bias etching system. Afterward, the following steps a and b are performed repeatedly. In step a, a first capping layer is formed on the periodic substrate by the ion beam sputtering system. In step b, a second capping layer with a corrugation appearance is formed on the first capping layer by simultaneously depositing by the ion beam sputtering system and trimming by the bias etching system. The autocloning corrugation multilayer can be carried out according to this method. | 05-21-2009 |
20090145743 | SPUTTERING DEVICES AND METHODS - The invention provides devices and methods for depositing uniform coatings using cylindrical magnetron sputtering. The devices and methods of the invention are useful in depositing coatings on non-cylindrical workpiece surfaces. An assembly of electromagnets located within the bore of a hollow cylindrical emitter is used to form a magnetic field exterior to and near the exterior surface of the emitter. The magnet assembly configuration is selected to provide a magnetic field configuration compatible with the workpiece surface contour. The electromagnet assembly may be a plurality of magnet units, each unit having at least one electromagnet. The magnetic field strength from each magnet unit is separately and electrically adjustable. Each electromagnet in the assembly has a coil of electrically conducting material surrounding a specially shaped core of magnetic material. | 06-11-2009 |
20090166183 | METHOD OF MANUFACTURING A PERPENDICULAR MAGNETIC WRITE HEAD WITH STEPPED TRAILING MAGNETIC SHIELD USING COLLIMATED SPUTTER DEPOSITION - A method for manufacturing a magnetic write head having a stepped trailing shield. The stepped trailing shield is formed by forming a non-magnetic bump over a write pole prior to electroplating a wrap-around magnetic shield. This bump is formed by constructing a mask having an opening configured to define the non-magnetic bump. A magnetic material is then sputter deposited. In order to decrease deposition of the magnetic material on the sides of the mask, a collimator is used to align the deposited material along a plane substantially parallel with an air bearing surface plane. This collimation of the deposited magnetic material greatly facilitates liftoff, and more importantly prevents the formation of fences which would otherwise have to be removed by a harsh, aggressive process. | 07-02-2009 |
20090166184 | Perpendicular magnetic medium with shields between tracks - A track shield structure is disclosed that enables higher track density to be achieved in a patterned track medium without increasing adjacent track erasure and side reading. This is accomplished by placing a soft magnetic shielding structure in the space that is present between the tracks in the patterned medium. A process for manufacturing the added shielding structure is also described. | 07-02-2009 |
20090166185 | ION ASSISTED DEPOSITION METHOD FOR FORMING MULTILAYER FILM - An ion assisted deposition (IAD) method for forming a film on a substrate is disclosed. The film includes a number of layers. The substrate is bombarded by an ion source with a low ion energy at a initial period of forming each of the layers and a high ion energy during a majority period of forming each of the layers after the respective initial period. | 07-02-2009 |
20090211896 | Cathode and Counter-Cathode Arrangement in an Ion Source - The present invention relates to ion sources ( | 08-27-2009 |
20090236217 | CAPILLARITRON ION BEAM SPUTTERING SYSTEM AND THIN FILM PRODUCTION METHOD - A capillaritron ion beam sputtering system and a thin film production method are disclosed. By utilizing reactive capillaritron ion beam sputtering deposition, argon and oxygen are passed through a capillaritron ion source simultaneously. Argon is being ionized and accelerated by a voltage to bombard a zinc target and create zinc atoms, while oxygen atoms are created at the same time. Zinc atom and oxygen atom are combined to form ZnO to deposit on a substrate. The stoichiometric properties, deposition rate, transmission properties, surface roughness and film density of the as-deposited film can be altered by adjusting capillaritron ion beam energy and oxygen partial pressure. Using preferred processing parameters, the root-mean-square surface roughness of the as-deposited film can be smaller than 1.5 nm, while the transmission coefficient at visible range can be greater than 80%. | 09-24-2009 |
20090242385 | METHOD OF DEPOSITING METAL-CONTAINING FILMS BY INDUCTIVELY COUPLED PHYSICAL VAPOR DEPOSITION - A method for depositing a metal-containing film on a substrate using an inductively coupled (ICP) physical vapor deposition (PVD) system. The ICP PVD deposition is performed under process conditions that thermalize neutral sputtered metal atoms by collisions with a process gas and minimize or eliminate exposure of ions to the substrate. | 10-01-2009 |
20090242386 | System and Method of Fabricating Pores in Polymer Membranes - A system of the present disclosure has a particle source that generates an ion beam and a vacuum chamber that houses a polymer film. The particle source bombards the polymer film with the ion beam. The system further has a controller that controls the particle source based upon an amount of the gas detected within the vacuum chamber. | 10-01-2009 |
20090242387 | PROCESS FOR PRODUCING SILICA GLASS CONTAINING TIO2, AND OPTICAL MATERIAL FOR EUV LITHOGRAPHY EMPLOYING SILICA GLASS CONTAINING TIO2 - The claimed invention relates to a process for producing an optical material for EUV lithography, wherein the optical material contains a silica glass having a TiO | 10-01-2009 |
20090288942 | PARTICULATE CAPTURE IN A PLASMA TOOL - A method and apparatus for increasing adhesion of particles ejected from a substrate being sputtered to interior surfaces of a vacuum chamber containing the substrate. The method includes: forming a viscous coating on a at least some regions of interior surfaces of the vacuum chamber, the viscous coating having a vapor pressure of no greater than 1/1000 of a nominal operating pressure of the vacuum chamber, the vapor pressure measured at a maximum operating temperature of the interior surfaces of the vacuum chamber that will be reached when the substrate is being bombarded by ions generated in and extracted from a plasma; and bombarding the substrate with the ions and capturing at least some of the ejected particles in the viscous coating. | 11-26-2009 |
20090321247 | IONIZED PHYSICAL VAPOR DEPOSITION (iPVD) PROCESS - A method is provided of operating a deposition system to deposit coating material into high aspect ratio nano-sized features on a patterned substrate that enhances sidewall coverage compared to field area and bottom surface coverage while minimizing or eliminating overhang. The method includes performing a process step with a gross field area deposition rate of about 25 to 70 nm/min and simultaneously etching the barrier layer to establish a net field area deposition rate of about 5 to 40 nm/min. The method may also include first performing a protective layer deposition step with a field area deposition rate of about 5 to 20 nm/min without etching the underlying surface then performing a surface modification step with gross deposition and simultaneous etching at a field modification net deposition rate of about −10 to +40 nm/min. | 12-31-2009 |
20100012480 | METHOD FOR CONTROLLING RADIAL DISTRIBUTION OF PLASMA ION DENSITY AND ION ENERGY AT A WORKPIECE SURFACE BY MULTI-FREQUENCY RF IMPEDANCE TUNING - The method of performing physical vapor deposition on a workpiece includes performing at least one of the following: (a) increasing ion density over a workpiece center while decreasing ion density over a workpiece edge by decreasing impedance to ground at a target source power frequency f | 01-21-2010 |
20100025228 | Method for Preparing Thin GaN Layers by Implantation and Recycling of a Starting Substrate - A method for preparing a thin layer of GaN from a starting substrate in which at least one thick surface area extending along a free face of the starting substrate includes GaN, where the method includes bombarding the free face of the substrate with helium and hydrogen atoms, the helium being implanted first into the thickness of the thick surface area and the hydrogen being implanted thereafter, and where the helium and hydrogen doses each vary between 1.1017 atoms/cm2 and 4.1017 atoms/cm2. The starting substrate is subjected to a rupture process in order to induce the separation, relative to a residue of the starting substrate, of the entire portion of the thick area located between the free face and the helium and hydrogen implantation depth. The helium is advantageously implanted in a dose at least equal to that of hydrogen, and can also be implanted alone. | 02-04-2010 |
20100032288 | COATING AND ION BEAM MIXING APPARATUS AND METHOD TO ENHANCE THE CORROSION RESISTANCE OF THE MATERIALS AT THE ELEVATED TEMPERATURE USING THE SAME - The present invention relates, in general, to shoes for measuring the quantity of motion and a method of measuring the quantity of motion using the shoes and, more particularly, to artificial intelligence shoes, in which various numerical values (calorie consumption, body fat, and a pulse), measured by a walking sensor ( | 02-11-2010 |
20100059362 | TECHNIQUES FOR MANUFACTURING SOLAR CELLS - Techniques for manufacturing solar cells are disclosed. In one particular exemplary embodiment, the technique may be comprise disposing the solar cell downstream of an ion source; disposing a mask between the ion source and the solar cell, the mask including a front surface, a back surface, and at least one aperture extending in an aperture direction from the front surface to the back surface; and directing ions from the ion source to the solar cell along an ion beam path and through the at least one aperture of the mask, where the ion beam path may be non-parallel relative to the aperture direction. | 03-11-2010 |
20100078311 | Aluminum Floride Thin Film Deposition Method - An aluminum fluoride thin film deposition method includes the steps of (a) putting a substrate and a pure aluminum target in a plasma sputtering system, (b) applying argon plasma to the plasma sputtering system to remove impurities from the aluminum target, (c) applying CF | 04-01-2010 |
20100108494 | MICROPOROUS ARTICLE HAVING METALLIC NANOPARTICLE COATING - A metallic nanoparticle coated microporous substrate, the process for preparing the same and uses thereof are described. | 05-06-2010 |
20100155224 | Multi-Component Deposition - Ion-enhanced physical vapor deposition is augmented by sputtering to deposit multi-component materials. The process may be used to deposit coatings and repair material on Ti alloy turbine engine parts. The physical vapor deposition may be ion-enhanced electron beam physical vapor deposition. | 06-24-2010 |
20100187095 | MANUFACTURING METHOD OF A BORIDE FILM, AND MANUFACTURING METHOD OF AN ELECTRON-EMITTING DEVICE - A boride film is deposited on a substrate through an opening portion a shield member located between the substrate and a target by means of a sputtering method. The shield member is arranged so as to shield between an erosion region of the target and the substrate. A distribution of plasma density in a space between the substrate and the target is set in such a manner that a plasma density in a region in which the opening portion is located becomes higher than a plasma density in a region shielded by the shield member. | 07-29-2010 |
20100258431 | USE SPECIAL ION SOURCE APPARATUS AND IMPLANT WITH MOLECULAR IONS TO PROCESS HDD (HIGH DENSITY MAGNETIC DISKS) WITH PATTERNED MAGNETIC DOMAINS - A method and apparatus for manufacturing magnetic storage media is provided. A structural substrate is coated with a magnetically susceptible material, and a patterned resist layer is formed over the magnetically susceptible material. Atom groups are directed toward the substrate, penetrating the resist and implanting into the magnetically susceptible layer. Thick portions of the resist prevent implantation in some areas to form a pattern of magnetic properties on the substrate. Energy and composition of the atom groups, thickness and hardness of the resist, and lattice energy of the magnetically susceptible material may all be adjusted to yield desired fragmentation and implantation of the atom groups, including in some embodiments mere impact on the surface without implanting. A protective layer and a lubricating layer are formed over the patterned magnetically susceptible layer. | 10-14-2010 |
20100276272 | Method for fabricating a high coercivity hard bias structure for magnetoresistive sensor - A hard bias (HB) structure for longitudinally biasing a free layer in a MR sensor is disclosed that includes a mildly etched seed layer and a hard bias (HB) layer on the etched seed layer. The HB layer may contain one or more HB sub-layers stacked on a lower sub-layer which contacts the etched seed layer. Each HB sub-layer is mildly etched before depositing another HB sub-layer thereon. The etch may be performed in an IBD chamber and creates a higher concentration of nucleation sites on the etched surface thereby promoting a smaller HB average grain size than would be realized with no etch treatments. A smaller HB average grain size is responsible for increasing Hcr in a CoPt HB layer to as high as 2500 to 3000 Oe. Higher Hcr is achieved without changing the seed layer or HB material and without changing the thickness of the aforementioned layers. | 11-04-2010 |
20100276273 | METHOD AND APPARATUS FOR CONTROLLING ION ENERGY DISTRIBUTION - Systems, methods and apparatus for regulating ion energies in a plasma chamber are disclosed. An exemplary system includes an ion-energy control portion, and the ion-energy control portion provides at least one ion-energy control signal responsive to at least one ion-energy setting that is indicative of a desired distribution of energies of ions bombarding a surface of a substrate. A controller is coupled to the switch-mode power supply, and the controller provides at least two drive-control signals. In addition, a switch-mode power supply is coupled to the substrate support, the ion-energy control portion and the controller. The switch-mode power supply includes switching components configured to apply power to the substrate responsive to the drive signals and the ion-energy control signal so as to effectuate the desired distribution of the energies of ions bombarding the surface of the substrate. | 11-04-2010 |
20100294648 | Magnetically Enhanced, Inductively Coupled Plasma Source for a Focused Ion Beam System - The present invention provides an inductively coupled, magnetically enhanced ion beam source, suitable to be used in conjunction with probe-forming optics to produce an ion beam without kinetic energy oscillations induced by the source. | 11-25-2010 |
20100314244 | Ionized Physical Vapor Deposition for Microstructure Controlled Thin Film Deposition - Methods of processing a substrate in a PVD chamber comprising a target, a substrate and a process gas at a pressure sufficient to cause ionization of a substantial portion of species sputtered from the target are described. A capacitively coupled high density plasma is maintained by applying very high frequency power to the target. Sputtered material is ionized in the plasma and accelerated toward the substrate by a high frequency bias power applied to the substrate. The microstructure of the resultant film is controlled by modifying one or more of the pressure and the high frequency bias power. | 12-16-2010 |
20100320075 | High-Temperature Ionic State Compound Crystallization Technology - The present invention provides a high-temperature ionic state fluidized bed compound crystallization technology and an internal reactor structure thereof. The principle of the present invention is that reaction gas is effected by a group of high-frequency external magnetic fields and forms the high-temperature gaseous ion in the first quartz vacuum tube, then forms ion deposition diffusion in the second quartz vacuum tube preheated at constant temperature. As a result, other high-temperature gaseous ions except the silicon hydride are decomposed, rapidly deposited and crystallized in the ion diffusion chamber. And the un-decomposed silicon hydride gas is directly poured into the surface of the silicon heating body of the compound fluidized bed by the static negative high-voltage quartz spray hole to decompose and crystallize, or crystallize by a way of fluid state in the arched heating quartz tube communicating with the top of two quartz reaction furnaces. | 12-23-2010 |
20110011734 | Plasma Gun and Plasma Gun Deposition System Including the Same - A plasma gun of the present invention includes: a container having a plasma outflow opening; a cathode ( | 01-20-2011 |
20110056825 | DIELECTRIC-LAYER-COATED SUBSTRATE AND INSTALLATION FOR PRODUCTION THEREOF - The invention relates to a substrate ( | 03-10-2011 |
20110089022 | METHOD AND APPARATUS FOR SURFACE PROCESSING OF A SUBSTRATE - Method and apparatus for processing a substrate with a beam of energetic particles. The beam is directed from a source through a rectangular aperture in a shield positioned between the source and substrate to a treatment zone in a plane of substrate movement. Features on the substrate are aligned parallel to a major dimension of the rectangular aperture and the substrate is moved orthogonally to the aperture's major dimension. The beam impinges the substrate through the aperture during movement. The substrate may be periodically rotated by approximately 180° to reorient the features relative to the major dimension of the rectangular aperture. The resulting treatment profile is symmetrical about the sides of the features oriented toward the major dimension of the rectangular aperture. | 04-21-2011 |
20110100798 | Charged Particle Extraction Device And Method Of Design There for - The present invention provides a method for extracting a charged particle beam from a charged particle source. A set of electrodes is provided at the output of the source. The potentials applied to the electrodes produce a low-emittance growth beam with substantially zero electric field at the output of the electrodes. | 05-05-2011 |
20110139605 | ION BEAM SOURCE - This invention relates an ion beam source ( | 06-16-2011 |
20110209983 | USE OF HIGH ENERGY HEAVY ION BEAM FOR DIRECT SPUTTERING - High energy heavy ions are used to produce free space regions by sputtering the high energy beam through a mask onto a substrate. The invention also includes a method of focusing the high energy beam with a beam focusing system. The invention is in part based on an experiment in which 900 keV gold ions were used to sputter aluminum, copper, silicon and silver. The results demonstrate the possibility that high energy heavy ions could be used to fabricate microstructures in selected metals and silicon in a single step process. | 09-01-2011 |
20110220487 | Protective Enclosure for an Ion Gun, Device for Depositing Materials through Vacuum Evaporation Comprising Such a Protective Enclosure and Method for Depositing Materials - The present invention relates to a protective enclosure for an ion gun and to a device for depositing materials through vacuum evaporation comprising such an enclosure and methods of using each. According to the invention, the protective enclosure comprises a side wall intended to surround said ion gun, and an open upper end, said protective enclosure having a longitudinal axis, a truncated tube shape on its open upper end resulting from an inclined surface relative to said longitudinal axis, and having a lower part and an upper part. | 09-15-2011 |
20110226611 | CLOSED DRIFT MAGNETIC FIELD ION SOURCE APPARATUS CONTAINING SELF-CLEANING ANODE AND A PROCESS FOR SUBSTRATE MODIFICATION THEREWITH - A process for modifying a surface of a substrate is provided that includes supplying electrons to an electrically isolated anode electrode of a closed drift ion source. The anode electrode has an anode electrode charge bias that is positive while other components of the closed drift ion source are electrically grounded or support an electrical float voltage. The electrons encounter a closed drift magnetic field that induces ion formation. Anode contamination is prevented by switching the electrode charge bias to negative in the presence of a gas, a plasma is generated proximal to the anode electrode to clean deposited contaminants from the anode electrode. The electrode charge bias is then returned to positive in the presence of a repeat electron source to induce repeat ion formation to again modify the surface of the substrate. An apparatus for modification of a surface of a substrate by this process is provided. | 09-22-2011 |
20110278156 | MULTIPLE ANODE ION SOURCE - An ion source is provided. The ion source comprises a first cylindrical anode and a second cylindrical anode. The first cylindrical anode is concentric with the second cylindrical anode. The ion source further comprises an electron source positioned within the first cylindrical anode or the second cylindrical anode. | 11-17-2011 |
20120080306 | PHOTOVOLTAIC DEVICE AND METHOD FOR MAKING - One aspect of the present invention provides a method to make a film. The method includes providing a target comprising a semiconductor material within an environment comprising oxygen; applying a plurality of direct current pulses to the target to create a pulsed direct current plasma; sputtering the target with the pulsed direct current plasma to eject a material comprising cadmium and sulfur into the plasma; and depositing a film comprising the material onto a substrate. The target includes a semiconductor material that comprises semiconductor material comprises cadmium and sulfur. | 04-05-2012 |
20120080307 | ION BEAM DISTRIBUTION - An ion beam system includes a grid assembly having a substantially elliptical pattern of holes to steer an ion beam comprising a plurality of beamlets to generate an ion beam, wherein the ion current density profile of a cross-section of the ion beam is non-elliptical. The ion current density profile may have a single peak that is symmetric as to one of the two orthogonal axes of the cross-section of the ion beam. Alternatively, the single peak may be asymmetric as to the other of the two orthogonal axes of the cross-section of the ion beam. In another implementation, the ion current density profile may have two peaks on opposite sides of one of two orthogonal axes of the cross-section. Directing the ion beam on a rotating destination work-piece generates a substantially uniform rotationally integrated average ion current density at each point equidistant from the center of the destination work-piece. | 04-05-2012 |
20120080308 | PLUME STEERING - Non-elliptical ion beams and plumes of sputtered material can yield a relatively uniform wear pattern on a destination target and a uniform deposition of sputtered material on a substrate assembly. The non-elliptical ion beams and plumes of sputtered material impinge on rotating destination targets and substrate assemblies. A first example ion beam grid and a second example ion beam grid each have patterns of holes with an offset between corresponding holes. The quantity and direction of offset determines the quantity and direction of steering individual beamlets passing through corresponding holes in the first and second ion beam grids. The beamlet steering as a whole creates a non-elliptical current density distribution within a cross-section of an ion beam and generates a sputtered material plume that deposits a uniform distribution of sputtered material onto a rotating substrate assembly. | 04-05-2012 |
20120125764 | METHOD FOR PRODUCING OXIDE THIN FILM - A method for producing an oxide thin film, including depositing sputtered particles from a metallic deposition source on a deposition area under the condition of a sputtering energy density of 9.5 W/cm | 05-24-2012 |
20120145534 | PROCESS FOR PRODUCING REFLECTIVE MASK BLANK FOR EUV LITHOGRAPHY AND PROCESS FOR PRODUCING SUBSTRATE WITH FUNCTIONAL FILM FOR THE MASK BLANK - To provide a process for producing an EUV mask blank, capable of reducing foreign matter attributable to a sputtering target, and a process for producing a substrate with a functional film for such a mask blank. | 06-14-2012 |
20120234671 | METHOD AND DEVICE FOR PRODUCING THREE-DIMENSIONAL OBJECTS - The invention concerns a method for producing three-dimensional objects ( | 09-20-2012 |
20120241310 | DEVICE AND METHOD FOR COATING A SUBSTRATE - An apparatus for coating a substrate has a vacuum chamber designed to receive the substrate and at least one sputtering target to be ablated during operation of the apparatus by particle bombardment. At least one window is arranged in the wall of the vacuum chamber. A device for determining the wear of the sputtering target, by optically measuring the distance between at least one predefinable point outside the vacuum chamber and at least one predefinable point on the surface of the sputtering target, and including an evaluation device correcting for any parallax offset and/or a geometric distortion. | 09-27-2012 |
20120267238 | PROCESS FOR DEPOSITION OF AMORPHOUS CARBON - A method for increasing oil-out survivability in a mechanical system having a plurality of components each having a least one surface, includes placing at least one of the plurality of components into a vacuum chamber having at least one broad-beam ion gun; supplying an inert gas to the broad-beam ion gun; accelerating the ionized inert gas to high kinetic energy; cleaning the surface of the component with the ionized and accelerated inert gas; supplying a hydrocarbon gas having at least 25 wt % acetylene to the broad-beam ion gun; ionizing the hydrocarbon gas; accelerating the ionized hydrocarbon gas to high kinetic energy; and directing the ionized and accelerated hydrocarbon gas to the surface of the component at a temperature of about 300° F. or less to deposit a carbon-based coating thereon. | 10-25-2012 |
20120305385 | PLASMA SPUTTERING PROCESS FOR PRODUCING PARTICLES - A high production rate plasma sputtering process for producing particles having a size of 10 μm or less is disclosed. The process causes ionization of at least a part of the sputtered target atoms and is performed at such parameters that the pick-up probability of ionized sputtered target atoms on the surface of grains is high. | 12-06-2012 |
20130008776 | METHOD OF FORMING CARBON FILM, AND METHOD OF MANUFACTURING MAGNETIC RECORDING MEDIUM - There is provided a method of forming a carbon film which enables formation of a dense carbon film exhibiting high wettability with respect to a lubricant and also having high hardness, the method of forming a carbon film including: introducing a raw material gas (G) containing carbon and hydrogen into a deposition chamber having a reduced pressure; ionizing the gas (G) by electric discharge between a filamentous cathode electrode that is heated through energization and an anode electrode provided in the periphery of the cathode electrode; and accelerating the ionized gas by a bias voltage that is applied to a substrate (D) to irradiate the surface of the substrate (D) with the accelerated gas, thereby forming a carbon film on the surface of the substrate (D), wherein a pulsed negative voltage is employed as the bias voltage to be applied to the surface of the substrate (D). | 01-10-2013 |
20130015055 | DUAL PLASMA SOURCE SYSTEMS AND METHODS FOR REACTIVE PLASMA DEPOSITIONAANM Hegde; Hariharakeshava SarpangalaAACI FremontAAST CAAACO USAAGP Hegde; Hariharakeshava Sarpangala Fremont CA US - A plasma processing system for providing a uniform erosion of a surface of a target is provided. The system includes a dual plasma source arrangement, wherein each plasma source of the dual plasma source arrangement having a source housing for generating plasma therein. The system further includes a set of antennas, wherein at least one antenna is positioned outside of the source housing of each plasma source, at least one antenna is configured to be excited with RF power to generate the plasma inside the source housing of the each plasma source. The system yet also includes a magnet assembly configured for directing ions of the plasma within the source housing of the each plasma source through an opening of the source housing toward the surface of the target, wherein the target is positioned between a first plasma source of the dual plasma source arrangement and a second plasma source of the dual plasma source arrangement. | 01-17-2013 |
20130068611 | Localized, In-Vacuum Modification of Small Structures - A charge transfer mechanism is used to locally deposit or remove material for a small structure. A local electrochemical cell is created without having to immerse the entire work piece in a bath. The charge transfer mechanism can be used together with a charged particle beam or laser system to modify small structures, such as integrated circuits or micro-electromechanical system. The charge transfer process can be performed in air or, in some embodiments, in a vacuum chamber. | 03-21-2013 |
20130153408 | METHOD FOR PRODUCING CUBIC ZIRCONIA LAYERS - In order to produce zirconia-based layers on a deposition substrate, wherein reactive spark deposition using pulsed spark current and/or the application of a magnetic field that is perpendicular to the spark target are employed, a mixed target comprising elemental zircon and at least one stabilizer is used, or a zirconium target comprising elemental zirconium is used, wherein in addition to oxygen, nitrogen is used as the reactive gas. As an alternative, combined with the use of the mixed target, nitrogen can also be used as the reactive gas in addition to oxygen. | 06-20-2013 |
20130206583 | Method and Apparatus for Surface Processing of a Substrate Using an Energetic Particle Beam - Method and apparatus for processing a substrate with an energetic particle beam. Features on the substrate are oriented relative to the energetic particle beam and the substrate is scanned through the energetic particle beam. The substrate is periodically indexed about its azimuthal axis of symmetry, while shielded from exposure to the energetic particle beam, to reorient the features relative to the major dimension of the beam. | 08-15-2013 |
20140014497 | Film Deposition Assisted by Angular Selective Etch on a Surface - An ion etch assisted deposition apparatus deposits a thin film upon a substrate having a three dimensional feature, using an ion etching source and deposition source arranged at similar angles relative to the substrate and at an angle α relative to each other. The angle α is selected to be substantially equal the supplement of the angle α′ formed between the three dimensional feature on the substrate and the substrate surface. In this configuration the relative flux of energetic etch ions and deposition atoms is adjusted to prevent the growth of poor quality deposited material. | 01-16-2014 |
20140014498 | METHOD FOR MANUFACTURING METAL FOIL PROVIDED WITH ELECTRICAL RESISTANCE LAYER - The present invention provides a method for producing a metal foil with an electric resistance layer which can stably obtain electric characteristics of a resistive element, suppress peeling between the metal foil and the electric resistance layer disposed on the metal foil, and realize a high sheet resistance value and the method includes forming an electric resistance layer on a metal foil having a 10-point average roughness Rz, which is measured by the optical method according to 1 μm or less and whose surface is treated by irradiation with ion beams at an ion beam intensity of 0.70 to 2.10 sec·W/cm | 01-16-2014 |
20140042014 | METHOD FOR USING SPUTTERING TARGET AND METHOD FOR FORMING OXIDE FILM - In a method for using a sputtering target, by making an ion collide with the sputtering target, a sputtered particle whose size is greater than or equal to 1/3000 and less than or equal to 1/20, preferably greater than or equal to 1/1000 and less than or equal to 1/30 of a crystal grain is generated. | 02-13-2014 |
20140061028 | HYDROPHILIC COATINGS, METHODS FOR DEPOSITING HYDROPHILIC COATINGS AND IMPROVED DEPOSITION TECHNOLOGY FOR THIN FILMS - The invention provides certain embodiments that involve sputtering techniques for applying a mixed oxide film comprising silica and titania. In these embodiments, the techniques involve sputtering at least two targets in a common chamber (e.g., in a shared gaseous atmosphere). A first of these targets includes silicon, while a second of the targets includes titanium. Further, the invention provides embodiments involving a substrate bearing a hydrophilic coating, which can be deposited by sputtering or any other suitable thin film deposition technique. The invention also provides techniques and apparatuses useful for depositing a wide variety of coating types. For example, the invention provides thin film deposition technologies in which sputtering apparatuses or other thin film deposition apparatuses are employed. | 03-06-2014 |
20140083840 | Film Deposition Apparatus and Film Deposition Method - A film deposition apparatus includes: a chamber including a chamber wall that is formed with a window; a target holder disposed in the chamber for supporting a target; a radio frequency power device; a pole plate unit disposed in the chamber and including a first pole plate that is electrically connected to the radio frequency power device, and a second pole plate for supporting the substrate, the first and second pole plates being disposed at two opposite sides of the target holder; a vacuum device to extract air from the chamber; and a pulsed laser device to generate a laser beam capable of bombarding the target through the window. | 03-27-2014 |
20140090973 | DEVICE AND METHOD FOR ION BEAM SPUTTERING - The invention relates to a device for depositing a selected material on a substrate by means of ion beam sputtering, which include a plurality of targets of a selected material, each of which is bombarded by an ion beam, the lateral dimensions of each of the ion beams being less than one tenth of the lateral dimensions of the substrate. | 04-03-2014 |
20140110244 | SUPERSONIC BEAM APPARATUS AND CLUSTER ION BEAM FORMING METHOD - Provided is a supersonic beam apparatus including a nozzle for injecting a gas at a supersonic velocity into a vacuum; a skimmer arranged at a downstream of the nozzle; and an ionization part for ionizing a particle in a supersonic beam formed by the skimmer from the gas injected from the nozzle to form a cluster ion beam, wherein a set position of the skimmer is one of a maximum position where an amount of cluster generation in a relationship of the amount of cluster generation with respect to a distance between the nozzle and the skimmer is maximized and a position closer to the nozzle than the maximum position. | 04-24-2014 |
20140174909 | Generating a Highly Ionized Plasma in a Plasma Chamber - A method of generating a highly ionized plasma in a plasma chamber. A neutral gas is provided to be ionized in the plasma chamber at pressure below 50 Pa. At least one high energy high power electrical pulse is supplied with power equal or larger than 100 kW and energy equal or larger than 10 J, to at least one magnetron cathode in connection with a target in the plasma chamber. A highly ionized plasma is produced directly from the neutral gas in a plasma volume such that the plasma volume cross section increases during a current rise period. Atoms are sputtered from the target with the highly ionized plasma. At least part of the sputtered atoms are ionized. | 06-26-2014 |
20140231242 | TOOL AND PROCESS FOR TREATING AN OBJECT BY PLASMA GENERATORS - An apparatus for treating a surface of an object comprises a vacuum chamber in which the object is intended to be placed, and means, in communication with the vacuum chamber, for treating the surface of the object, comprising at least two plasma generator. The apparatus also comprises means for controlling each generator independently of any other generator. These controlling means comprise means for activating/deactivating the generator. The invention also relates to a process for treating a surface of an object. | 08-21-2014 |
20140311892 | REACTIVE SPUTTERING PROCESS - Reactive sputtering in which, by ion bombardment, material is ejected from the surface of a target and transitions to the gas phase. Negative voltage pulses are applied to the target to establish electric current having a current density greater than 0.5 A/cm | 10-23-2014 |
20150047970 | ALKALI RESISTANT OPTICAL COATINGS FOR ALKALI LASERS AND METHODS OF PRODUCTION THEREOF - In one embodiment, a method for forming an alkali resistant coating includes forming a first oxide material above a substrate and forming a second oxide material above the first oxide material to form a multilayer dielectric coating, wherein the second oxide material is on a side of the multilayer dielectric coating for contacting an alkali. In another embodiment, a method for forming an alkali resistant coating includes forming two or more alternating layers of high and low refractive index oxide materials above a substrate, wherein an innermost layer of the two or more alternating layers is on an alkali-contacting side of the alkali resistant coating, and wherein the innermost layer of the two or more alternating layers comprises at least one of: alumina, zirconia, and hafnia. | 02-19-2015 |
20150292077 | Methods For Directed Irradiation Synthesis With Ion and Thermal Beams - A method for fabricating structures on substrate having a substrate surface includes providing a set of control parameters to an ion beam source and thermal source corresponding to a desired nanostructure topology. The method also includes forming a plurality of nanostructures in a first surface area of the substrate by exposing the substrate surface to an ion beam from the ion beam source and thermal energy from the thermal source. The ion beam has a first area of effect on the substrate surface, and the thermal energy has an second area of effect on the substrate surface Each of the first area and the second area includes the first surface area. In other words, the coincident beams under the set of control parameters produces a plurality of nano structures. | 10-15-2015 |
20160163507 | Deposition Method and Focused Ion Beam System - A deposition method is implemented in a focused ion beam system that supplies a compound gas to a specimen, and applies an ion beam to the specimen to deposit a deposition film, the deposition method including: a first deposition film-depositing step that deposits a first deposition film on the specimen using the ion beam that is defocused with respect to the specimen; and a second deposition film-depositing step that deposits a second deposition film on the first deposition film using the ion beam that is smaller in defocus amount than that used in the first deposition film-depositing step. | 06-09-2016 |