Class / Patent application number | Description | Number of patent applications / Date published |
205157000 | Coating predominantly semiconductor substrate (e.g., silicon, compound semiconductor, etc.) | 37 |
20080257743 | METHOD OF MAKING AN INTEGRATED CIRCUIT INCLUDING ELECTRODEPOSITION OF METALLIC CHROMIUM - A method of making an integrated circuit including a composition of matter for electrodepositing of chromium is disclosed. One embodiment provides a bath having a solution of a chromium salt in a substantially anhydrous organic solvent, to uses of certain chromium salts for electrodepositing and to processes for electrodepositing chromium. | 10-23-2008 |
20080289967 | SUBSTRATE GRIPPER WITH INTEGRATED ELECTRICAL CONTACTS - A substrate holding and transporting assembly is disclosed. The substrate holding and transporting assembly includes a base plate and a pair of clamps connected to the base plate in a spaced apart orientation, the spaced apart orientation of the pair of clamps enable support of a substrate with at least two independent points. The substrate holding and transporting assembly also includes an electrode assembly connected to the base plate at a location that is substantially between the pair of clamps. The electrode assembly defined to impart an electrical contact to the substrate when present and held by the pair of clamps. | 11-27-2008 |
20080314754 | INCREASING AN ELECTRICAL RESISTANCE OF A RESISTOR BY NITRIDIZATION - A method for increasing an electrical resistance of a resistor. A fraction F of an exterior surface of a surface layer of a resistor of a semiconductor structure is exposed to the nitrogen-comprising molecules. An anodization electrical circuit is formed and includes: a DC power supply, an electrolytic solution including nitrogen, and the resistor partially immersed in the electrolytic solution. The DC power supply is activated and generates a voltage output, that causes an electrolytic reaction in the electrolytic solution near the resistor. The electrolytic reaction generates nitrogen ions from the nitrogen in the electrolytic solution. The fraction F is exposed to the nitrogen ions. A portion of the surface layer is nitridized by being reacted with the nitrogen ions at a temperature above ambient room temperature such that an electrical resistance of the resistor is increased. | 12-25-2008 |
20090127122 | MULTI-CHAMBERED METAL ELECTRODEPOSITION SYSTEM FOR SEMICONDUCTOR SUBSTRATES - A multi-chambered system for electroplating metal layers on a semiconductor substrate. The system comprises a fluid reservoir having at least a first chamber and a second chamber. A cathode is located in the first chamber, an anode is located in the second chamber, and a shield is located between the cathode and anode. The cathode is configured to be electrically coupled to a semiconductor substrate locatable in the first chamber. The anode is configured to oppose a first major surface of the semiconductor substrate. The shield is configured to deter electrolytic fluid communication between the first and second chamber, other than though predefined openings in the shield. | 05-21-2009 |
20090166210 | Methods for plating write pole shield structures with ultra-thin metal gap seed layers - Methods and structures for electroplating shield structures for perpendicular thin film write poles having ultra thin non-magnetic top gaps on the order of a few nanometers are disclosed. Ultra thin, conductive seed layers serve a dual purpose as both plating seed layer and non-magnetic top gap for the write pole. Due to reduced current carrying capacity of ultra thin seed layers, an additional thick seed layer is also employed to aid delivering plating current to regions near the pole. | 07-02-2009 |
20090236231 | ELECTRODEPOSITION OF DIELECTRIC COATINGS ON SEMICONDUCTIVE SUBSTRATES - A method includes: immersing a semiconductive substrate in an electrodeposition composition, wherein at least 20 percent by weight of resin solids in the composition is a highly cross-linked microgel component, and applying a voltage between the substrate and the composition to form a dielectric coating on the substrate. A composition for use in electrodeposition includes a resin blend, a coalescing solvent, a catalyst, water, and a highly cross-linked migrogel, wherein at least 20 percent by weight of resin solids in the composition is the highly cross-linked microgel. Another composition for use in electrodeposition includes a surfactant blend, a low ion polyol, phenoxypropanol, a catalyst, water, a flexibilizer, and a highly cross-linked migrogel, wherein at least 20 percent by weight of resin solids in the composition is the highly cross-linked microgel. | 09-24-2009 |
20090236232 | ELECTROLYTIC PLATING SOLUTION, ELECTROLYTIC PLATING METHOD, AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE - An electrolytic plating solution includes a polar solvent, copper sulfate dissolved in the polar solvent, an accelerator including a sulfur compound, and a reducing agent having a smaller molecular weight than the accelerator. | 09-24-2009 |
20090283414 | ELECTROPLATING METHODS AND CHEMISTRIES FOR DEPOSITION OF GROUP IIIB-GROUP VIA THIN FILMS - An electrochemical co-deposition method and solution to plate uniform, defect free and smooth (In,Ga)—Se films with repeatability and controllable molar ratios of (In,Ga) to Se are provided. Such layers are used in fabrication of semiconductor and electronic devices such as thin film solar cells. In one embodiment, the present invention provides an alkaline electrodeposition solution that includes an In salt, a Se acid or oxide, a tartrate salt as complexing agent for the In species, and a solvent to electrodeposit an In—Se film possessing sub-micron thickness on a conductive surface. | 11-19-2009 |
20100140101 | ELECTROPLATING METHODS AND CHEMISTRIES FOR DEPOSITION OF COPPER-INDIUM-GALLIUM CONTAINING THIN FILMS - The present invention provides a method and precursor structure to form a solar cell absorber layer. The method includes electrodepositing a first layer including a film stack including at least a first film comprising copper, a second film comprising indium and a third film comprising gallium, wherein the first layer includes a first amount of copper, electrodepositing a second layer onto the first layer, the second layer including at least one of a second copper-indium-gallium-ternary alloy film, a copper-indium binary alloy film, a copper-gallium binary alloy film and a copper-selenium binary alloy film, wherein the second layer includes a second amount of copper, which is higher than the first amount of copper, and electrodepositing a third layer onto the second layer, the third layer including selenium; and reacting the precursor stack to form an absorber layer on the base. | 06-10-2010 |
20100155254 | WAFER ELECTROPLATING APPARATUS FOR REDUCING EDGE DEFECTS - Methods, apparatuses, and various apparatus components, such as base plates, lipseals, and contact ring assemblies are provided for reducing contamination of the contact area in the apparatuses. Contamination may happen during removal of semiconductor wafers from apparatuses after the electroplating process. In certain embodiments, a base plate with a hydrophobic coating, such as polyamide-imide (PAI) and sometimes polytetrafluoroethylene (PTFE), are used. Further, contact tips of the contact ring assembly may be positioned further away from the sealing lip of the lipseal. In certain embodiments, a portion of the contact ring assembly and/or the lipseal also include hydrophobic coatings. | 06-24-2010 |
20100170803 | Method and Apparatus for Plating Semiconductor Wafers - First and second electrodes are disposed at first and second locations, respectively, proximate to a periphery of a wafer support, wherein the first and second location are substantially opposed to each other relative to the wafer support. Each of the first and second electrodes can be moved to electrically connect with and disconnect from a wafer held by the wafer support. An anode is disposed over and proximate to the wafer such that a meniscus of electroplating solution is maintained between the anode and the wafer. As the anode moves over the wafer from the first location to the second location, an electric current is applied through the meniscus between the anode and the wafer. Also, as the anode is moved over the wafer, the first and second electrodes are controlled to connect with the wafer while ensuring that the anode does not pass over an electrode that is connected. | 07-08-2010 |
20100270166 | Method of Forming an organic Film Using a Gel, Said Gel and Use Thereof - The invention relates to a process for forming a polymeric organic film on an electrically conductive or semiconductive surface by application of an electric potential between a gel, in contact with said surface, and said surface, the gel comprising (i) a protic solvent, (ii) compounds having colloidal properties, (iii) an adhesion primer, optionally (iv) a monomer and the potential applied being at least equal to the reduction potential of the adhesion primer. The invention also relates to said gel, to its use and to a kit for forming an organic film. | 10-28-2010 |
20100300888 | PULSE SEQUENCE FOR PLATING ON THIN SEED LAYERS - A plating protocol is employed to control plating of metal onto a wafer comprising a conductive seed layer. Initially, the protocol employs cathodic protection as the wafer is immersed in the plating solution. In certain embodiments, the current density of the wafer is constant during immersion. In a specific example, potentiostatic control is employed to produce a current density in the range of about 1.5 to 20 mA/cm2. The immersion step is followed by a high current pulse step. During bottom up fill inside the features of the wafer, a constant current or a current with a micropulse may be used. This protocol may protect the seed from corrosion while enhancing nucleation during the initial stages of plating. | 12-02-2010 |
20100320090 | SUBSTRATE HOLDER, PLATING APPARATUS, AND PLATING METHOD - A plating method and a plating apparatus, which has a plurality of plating units, for plating a substrate. Each of the plating units includes a plating tank for containing a plating solution therein, a water cleaning tank, disposed adjacent to said plating tank for cleaning the substrate with water, a substrate holder for holding the substrate in a vertical orientation, a vertical displacing mechanism for vertically dipping the substrate holder and a substrate held thereby in the plating solution in the plating tank, and a lateral displacing mechanism or a back-and-forth displacing mechanism for moving the substrate holder while holding the substrate in a vertical orientation between the plating tank and the water cleaning tank. The plating unit also includes a loading/unloading station for loading and unloading the substrate, and a transfer device for transferring the substrate between the plating unit and the loading/unloading station. | 12-23-2010 |
20110048956 | ELECTRODEPOSITION METHOD FOR THE PRODUCTION OF NANOSTRUCTURED ZNO - The problem addressed by the invention is that of improving on an electrodeposition method for the production of nanostructured ZnO in such a manner that this method enables the production of nanostructured ZnO with a high internal quantum efficiency (IQE) without additional tempering steps. According to the invention, the electrodeposition method use an aqueous solution of a Zn salt, for example Zn(NO | 03-03-2011 |
20110062030 | ELECTROLYTE COMPOSITION - The electrolyte composition is used in a method of depositing metals, in particular, onto substrates, especially solar cells. The electrolyte composition is particularly suitable for the deposition of metals, in particular silver, onto solar cells. The electrolyte composition is preferably free of cyanides and contains at least one metal, preferably silver, and an iminodisuccinate derivative, preferably a sodium or postassium iminodisuccinate. | 03-17-2011 |
20110132769 | Alloy Coating Apparatus and Metalliding Method - A material ( | 06-09-2011 |
20110168564 | PLATING METHOD, SEMICONDUCTOR DEVICE FABRICATION METHOD AND CIRCUIT BOARD FABRICATION METHOD - The plating method comprises the step of forming a resin layer | 07-14-2011 |
20110226628 | CONICAL GRAPHITE ELECTRODE WITH RAISED EDGE - The present invention relates to a carbon electrode having a conical or pyramidal tip, wherein the tip is surrounded on its side by a raised edge. | 09-22-2011 |
20110259752 | METHOD FOR SUBSTANTIALLY UNIFORM COPPER DEPOSITION ONTO SEMICONDUCTOR WAFER - The methods practiced in an electrochemical deposition apparatus with two or more electrodes, described in earlier inventions, are disclosed. The methods produce uniform copper films with WFNU less than 2.5% on semiconductor wafers bearing a resistive copper seed layer with a thickness ranging from 50 to 9O0 A in a copper sulfate based electrolyte whose conductivity is between 0.02 to 0.8 S/cm. | 10-27-2011 |
20120006687 | METHOD OF FORMING CIGS THIN FILM - Disclosed herein is a method of forming a CIGS thin film, comprising the steps of: immersing a substrate comprising an electrode into an electrolyte solution comprising Na | 01-12-2012 |
20120061246 | FRONT REFERENCED ANODE - Apparatus and methods for electroplating are described. Apparatus described herein include anode supports including positioning mechanisms that maintain a consistent distance between the surface of the wafer and the surface of a consumable anode during plating. Greater uniformity control is achieved. | 03-15-2012 |
20120097547 | Method for Copper Electrodeposition - The present invention is related to a method for electroplating a copper deposit onto a substrate, wherein the method comprises the steps of: a) immersing the substrate into an electroplating bath having a copper ion concentration comprised between 0.5 mmol·l | 04-26-2012 |
20120145553 | APPARATUS AND METHODS FOR UNIFORMLY FORMING POROUS SEMICONDUCTOR ON A SUBSTRATE - This disclosure enables high-productivity controlled fabrication of uniform porous semiconductor layers (made of single layer or multi-layer porous semiconductors such as porous silicon, comprising single porosity or multi-porosity layers). Some applications include fabrication of MEMS separation and sacrificial layers for die detachment and MEMS device fabrication, membrane formation and shallow trench isolation (STI) porous silicon (using porous silicon formation with an optimal porosity and its subsequent oxidation). Further, this disclosure is applicable to the general fields of photovoltaics, MEMS, including sensors and actuators, stand-alone, or integrated with integrated semiconductor microelectronics, semiconductor microelectronics chips and optoelectronics. | 06-14-2012 |
20130199935 | COPPER FILLING OF THROUGH SILICON VIAS - A method for metallizing a through silicon via feature in a semiconductor integrated circuit device substrate. The method comprises immersing the semiconductor integrated circuit device substrate into an electrolytic copper deposition composition, wherein the through silicon via feature has an entry dimension between 1 micrometers and 100 micrometers, a depth dimension between 20 micrometers and 750 micrometers, and an aspect ratio greater than about 2:1; and supplying electrical current to the electrolytic deposition composition to deposit copper metal onto the bottom and sidewall for bottom-up filling to thereby yield a copper filled via feature. The deposition composition comprises (a) a source of copper ions; (b) an acid selected from among an inorganic acid, organic sulfonic acid, and mixtures thereof; (c) an organic disulfide compound; (d) a compound selected from the group consisting of a reaction product of benzyl chloride and hydroxyethyl polyethyleneimine, a quaternized dipyridyl compound, and a combination thereof; and (d) chloride ions. | 08-08-2013 |
20130284604 | METHOD AND APPARATUS FOR ELECTROPLATING SEMICONDUCTOR WAFER WHEN CONTROLLING CATIONS IN ELECTROLYTE - Apparatus and methods for electroplating metal onto substrates are disclosed. The electroplating apparatus comprise an electroplating cell and at least one oxidization device. The electroplating cell comprises a cathode chamber and an anode chamber separated by a porous barrier that allows metal cations to pass through but prevents organic particles from crossing. The oxidation device (ODD) is configured to oxidize cations of the metal to be electroplated onto the substrate, which cations are present in the anolyte during electroplating. In some embodiments, the ODD is implemented as a carbon anode that removes Cu(I) from the anolyte electrochemically. In other embodiments, the ODD is implemented as an oxygenation device (OGD) or an impressed current cathodic protection anode (ICCP anode), both of which increase oxygen concentration in anolyte solutions. Methods for efficient electroplating are also disclosed. | 10-31-2013 |
20140048420 | METHOD FOR FABRICATING ONE-DIMENSIONAL METALLIC NANOSTRUCTURES - A method for fabricating one-dimensional metallic nanostructures comprises steps: sputtering a conductive film on a flexible substrate to form a conductive substrate; placing the conductive substrate in an electrolytic solution, and undertaking electrochemical deposition to form one-dimensional metallic nanostructures corresponding to the conductive film on the conductive substrate. The method fabricates high-surface-area one-dimensional metallic nanostructures on a flexible substrate, exempted from the high price of the photolithographic method, the complicated process of the hard template method, the varied characteristic and non-uniform coating of the seed-mediated growth method. | 02-20-2014 |
20140110265 | Electrode and Method of Forming the Master Electrode - An electrode for forming an electrochemical cell with a substrate and a method of forming said electrode. The electrode comprises a carrier provided with an insulating layer which is patterned at a front side. Conducting material in an electrode layer is applied in the cavities of the patterned insulating layer and in contact with the carrier. A connection layer is applied at the backside of the carrier and in contact with the carrier. The periphery of the electrode is covered by the insulating material. | 04-24-2014 |
20140183051 | DEPOSITION OF PURE METALS IN 3D STRUCTURES - A system and method generate atomic hydrogen (H) for deposition of a pure metal in a three-dimensional (3D) structure. The method includes forming a monolayer of a compound that includes the pure metal. The method also includes depositing the monolayer on the 3D structure and immersing the 3D structure with the monolayer in an electrochemical cell chamber including an electrolyte. Applying a negative bias voltage to the 3D structure with the monolayer and a positive bias voltage to a counter electrode generates atomic hydrogen from the electrolyte and deposits the pure metal from the monolayer in the 3D structure. | 07-03-2014 |
20140251817 | METAL CONTACT SCHEME AND PASSIVATION SCHEME FOR SOLAR CELLS - A method of forming an oxide layer on an exposed surface of a semiconductor device which contains a p-n junction is disclosed, the method comprising: immersing the exposed surface of the semiconductor device in an electrolyte; producing an electric field in the semiconductor device such that the p-n junction is forward-biased and the exposed surface is anodic; and electrochemically oxidising the exposed surface to form an oxide layer. | 09-11-2014 |
20140262804 | ELECTROPLATING PROCESSOR WITH WAFER HEATING OR COOLING - In electroplating a wafer, the front and/or back side of the wafer is heated or cooled during processing. The wafer may be in contact with a backing plate of an electroplating processor. The backing plate may be heated via electrical heaters, by radiant heaters, or via a heated liquid or gas. The backing plate may alternatively be cooled using electric coolers or cooled liquid or gas. The heated or cooled backing plate then heats or cools the back side of the wafer largely via conduction. | 09-18-2014 |
20140318977 | MICROELECTRONIC SUBSTRATE ELECTRO PROCESSING SYSTEM - In a processing system for electroplating semiconductor wafers and similar substrates, the contact ring of the electroplating processor is removed from the rotor of the processor and replaced with a previously deplated contact ring. This allows the contact ring to be deplated in ring service module of the system, while the processor continues to operate. Wafer throughput is improved. The contact ring may be attached to a chuck for moving the contact ring between the processors and the ring service module, with the chuck quickly attachable and releasable to the rotor. | 10-30-2014 |
20150068911 | COPPER PLATING APPARATUS, COPPER PLATING METHOD AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE - A copper plating apparatus according to an embodiment includes a plating tank configured to have a copper member and a plating member being disposed in an interior of the plating tank, a blocking film configured to partition the interior of the plating tank into an anode chamber where the copper member is to be disposed and a cathode chamber where the plating member is to be disposed, the blocking film being configured to transmit copper ions and not transmit an additive agent, a supply unit configured to supply the additive agent to the anode chamber, and a power supply configured to apply a voltage between the copper member and the plating member. | 03-12-2015 |
20150292100 | METHODS AND APPARATUS FOR DEPOSITING A METAL LAYER ON A SEMICONDUCTOR DEVICE - Method and apparatus for the electrodeposition of a contact metal layer on contact areas of semiconductor components in a wafer assemblage. The method comprises: a) providing a wafer having components having at least one pn junction; b) arranging a non-conductive homogenizing device with respect to the first surfaces of the components, and an electrical contact device at a second surface of the wafer; c) introducing the wafer into an electroplating bath having an electrode, wherein the surface thereof consists at least partly of a first contact metal, and wherein the first surface of the components is in contact with the electroplating bath; d) applying a voltage to the electrode and to the contact device, as a result of which current flows between the electrode and the contact device, through the electroplating bath and the component and contact metal is thus deposited at the first contact areas of the components. | 10-15-2015 |
20150299886 | METHOD AND APPARATUS FOR PREPARING A SUBSTRATE WITH A SEMI-NOBLE METAL LAYER - Method and apparatus for preparing a substrate with a semi-noble metal layer are disclosed. The substrate can be pretreated so that a metal oxide surface on the semi-noble metal layer can be reduced to a modified metal surface integrated with the semi-noble metal layer. The substrate can be pretreated using a remote plasma treatment. A copper seed layer can be formed on the semi-noble metal layer using either an acidic or alkaline bath with a plating solution including either at least two copper complexing agents with varying dentacity or a single hexadentate copper complexing agent that is in excess of the copper source. The copper complexing agents can include a hexadentate ligand and a bidentate ligand. In some embodiments, a bulk layer of copper can be subsequently deposited on the copper seed layer using an acidic bath. | 10-22-2015 |
20150357195 | ELECTROCHEMICAL PLATING METHODS - An electrochemical process for applying a conductive film onto a substrate having a seed layer includes placing the substrate into contact with an electrochemical plating bath containing cobalt or nickel, with the plating bath having pH of 4.0 to 9.0. Electric current is conducted through the bath to the substrate. The cobalt or nickel ions in the bath deposit onto the seed layer. The plating bath may contain cobalt chloride and glycine. The electric current may range from 1-50 milli-ampere per square cm. After completion of the electrochemical process, the substrate may be removed from the plating bath, rinsed and dried, and then annealed at a temperature of 200 to 400 C to improve the material properties and reduce seam line defects. The plating and anneal process may be performed through multiple cycles. | 12-10-2015 |
20160177466 | METHODS AND APPARATUSES FOR DYNAMICALLY TUNABLE WAFER-EDGE ELECTROPLATING | 06-23-2016 |