Class / Patent application number | Description | Number of patent applications / Date published |
250427000 | Electron bombardment type | 12 |
20080230714 | APPARATUS AND METHODS OF FORMING A GAS CLUSTER ION BEAM USING A LOW-PRESSURE SOURCE - Embodiments of a gas cluster ion beam apparatus and methods for forming a gas cluster ion beam using a low-pressure process source are generally described herein. In one embodiment, the low-pressure process source is mixed with a high-pressure diluent source in a static pump to form a mixed source, from which a gas cluster jet is generated and ionized to form the gas cluster ion beam. Other embodiments may be described and claimed. | 09-25-2008 |
20080237484 | Plasma Source - A plasma source, particularly for disinfection of wounds, comprising: an ionization chamber having an inlet for introducing a gas into the ionization chamber and further having an outlet for dispensing the ionized gas onto an object; several ionization electrodes being disposed within the ionization chamber for ionizing the gas and a predetermined ratio of the electrode-electrode distance on the one hand and the electrode-wall distance on the other hand, wherein the ratio is in a range approximately between about 1.8 and about 2.2. | 10-02-2008 |
20090008571 | Ionizing Device - An ionizing device | 01-08-2009 |
20090090872 | ION IMPLANTATION DEVICE AND A METHOD OF SEMICONDUCTOR MANUFACTURING BY THE IMPLANTATION OF BORON HYDRIDE CLUSTER IONS - An ion implantation device and a method of manufacturing a semiconductor device is described, wherein ionized boron hydride molecular clusters are implanted to form P-type transistor structures. For example, in the fabrication of Complementary Metal-Oxide Semiconductor (CMOS) devices, the clusters are implanted to provide P-type doping for Source and Drain structures and for Poly gates; these doping steps are critical to the formation of PMOS transistors. The molecular cluster ions have the chemical form B | 04-09-2009 |
20090114841 | DOUBLE PLASMA ION SOURCE - An ion source includes a first plasma chamber including a plasma generating component and a first gas inlet for receiving a first gas such that said plasma generating component and said first gas interact to generate a first plasma within said first plasma chamber, wherein said first plasma chamber further defines an aperture for extracting electrons from said first plasma, and a second plasma chamber including a second gas inlet for receiving a second gas, wherein said second plasma chamber further defines an aperture in substantial alignment with the aperture of said first plasma chamber, for receiving electrons extracted therefrom, such that the electrons and the second gas interact to generate a second plasma within said second plasma chamber, said second plasma chamber further defining an extraction aperture for extracting ions from said second plasma. | 05-07-2009 |
20090140165 | Method and apparatus for controlling a gas cluster ion beam formed from a gas mixture - Methods and apparatus for controlling a gas cluster ion beam formed from a plurality of process gases in a gas mixture. The methods and apparatus involve measuring gas analysis data relating to the composition of the gas mixture and modifying the irradiation of the workpiece in response to the detected parameter. The gas analysis data can be derived from samples of the composition of the gas mixture flowing from a gas source to the gas cluster ion beam apparatus or samples of the residual gases inside the vacuum vessel of the gas cluster ion beam apparatus. | 06-04-2009 |
20090166555 | RF electron source for ionizing gas clusters - The present invention discloses a system and method for generating gas cluster ion beams (GCIB) having very low metallic contaminants. Gas cluster ion beam systems are plagued by high metallic contamination, thereby affecting their utility in many applications. This contamination is caused by the use of thermionic sources, which impart contaminants and are also susceptible to short lifecycles due to their elevated operating temperatures. While earlier modifications have focused on isolating the filament from the source gas cluster as much as possible, the present invention represents a significant advancement by eliminating the thermionic source completely. In the preferred embodiment, an inductively coupled plasma and ionization region replaces the thermionic source and ionizer of the prior art. Through the use of RF or microwave frequency electromagnetic waves, plasma can be created in the absence of a filament, thereby eliminating a major contributor of metallic contaminants. | 07-02-2009 |
20110062346 | Ion generating apparatus and method of removing a fluorine compound deposited in a source housing thereof - Provided is an ion generating apparatus. The ion generating apparatus includes opposed electrodes connected to a high-frequency power supply, and hence, even in a case where a cathode filament is broken, hydride gas can be ionized to generate hydrogen ion. Thus, a fluorine compound deposited in a source housing is reduced in vacuum, and gas containing fluorine generated due to the above-mentioned reduction reaction is discharged with a vacuum pump. | 03-17-2011 |
20110260075 | COMPACT PYROELECTRIC SEALED ELECTRON BEAM - A non-radioactive source for Atmospheric Pressure Ionization is described. The electron-beam sealed tube uses a pyroelectric crystal(s). One end of the crystal is grounded while the other end has a metallic cap with sharp feature to generate an electron beam of a given energy. The rate of heating and/or cooling of the crystal is used to control the current generated from a tube. A heating and/or cooling element such as a Peltier element is useful for controlling the rate of cooling of the crystal. A thin window that is transparent to electrons but impervious to gases is needed in order to prolong the life of the tube and allow the extraction of the electrons. If needed, multiple crystals with independent heaters can be used to provide continuous operation of the device. Dielectric shielding of the pyroelectric crystal is used to minimize discharge of the crystal. | 10-27-2011 |
20130240753 | Ion Source and Ion Implanter Including the Same - An ion source includes a filament configured to emit thermoelectrons and a cathode having a first side proximate the filament and a second side opposite the first side. The cathode includes a first layer that includes a first material on the first side of the cathode and a second layer on the second side of the cathode. The first layer is between the filament and the second side. The second layer is configured to limit discharge of the first material of the first layer from the ion source when the filament emits themoelectrons to generate ions from the ion source | 09-19-2013 |
20130313443 | EXCITED GAS INJECTION FOR ION IMPLANT CONTROL - An ion source includes an ion chamber housing defining an ion source chamber, the ion chamber housing having a side with a plurality of apertures. The ion source also includes an antechamber housing defining an antechamber. The antechamber housing shares the side with the plurality of apertures with the ion chamber housing. The antechamber housing has an opening to receive a gas from a gas source. The antechamber is configured to transform the gas into an altered state having excited neutrals that is provided through the plurality of apertures into the ion source chamber. | 11-28-2013 |
20160027630 | FILAMENT FOR MASS SPECTROMETRIC ELECTRON IMPACT ION SOURCE - The invention provides a cathode system for an Electron Ionization (EI) source comprising a filament and current supply posts, the current supply posts dividing the filament into segments and each current supply post supplying or returning the current for at least two segments of the filament. Each filament segment is connected, for instance by spot welding, to the supply posts delivering the heating current. The filament segments may be arranged in a row, or substantially parallel to each other. Filament segments arranged in a row may form a closed loop, for instance, a ring. Other embodiments encompass the filament shape of a helical coil. | 01-28-2016 |