Class / Patent application number | Description | Number of patent applications / Date published |
252790200 | Inorganic acid containing | 76 |
20080217576 | Etching Media for Oxidic, Transparent, Conductive Layers - The present invention relates to a novel etching medium for the structuring of transparent, conductive layers, as are used, for example, in the production of liquid-crystal displays (LCDS) using flat-panel screens or of organic light-emitting displays (OLEDs) or in thin-film solar cells. Specifically, it relates to particle-free compositions by means of which fine structures can be etched selectively in oxidic, transparent and conductive layers without damaging or attacking adjacent areas. The novel liquid etching medium can advantageously be applied by means of printing processes to the oxidic, transparent, conductive layers to be structured. Subsequent heat treatment accelerates or initiates the etching process. | 09-11-2008 |
20090008601 | POTASSIUM MONOPERSULFATE SOLUTIONS - A composition comprising a solution of potassium monopersulfate having an active oxygen content of from about 3.4% to about 6.8% and a process for its preparation including neutralization with an alkaline material is disclosed. | 01-08-2009 |
20090039312 | Etching Of Solar Cell Materials - A solar cell is fabricated by etching one or more of its layers without substantially etching another layer of the solar cell. In one embodiment, a copper layer in the solar cell is etched without substantially etching a topmost metallic layer comprising tin. For example, an etchant comprising sulfuric acid and hydrogen peroxide may be employed to etch the copper layer selective to the tin layer. A particular example of the aforementioned etchant is a Co-Bra Etch® etchant modified to comprise about 1% by volume of sulfuric acid, about 4% by volume of phosphoric acid, and about 2% by volume of stabilized hydrogen peroxide. In one embodiment, an aluminum layer in the solar cell is etched without substantially etching the tin layer. For example, an etchant comprising potassium hydroxide may be employed to etch the aluminum layer without substantially etching the tin layer. | 02-12-2009 |
20090108231 | Surface preparation compound - A surface cleaner and activation composition that leaves functional acid sites on the substrate, such as for example a composition consisting essentially of deionized water, an acid, such as for example glacial acetic acid or phosphoric acid, an alcohol, such as for example isopropyl or ethyl alcohol, and an adhesion promoter consisting of an aminofunctional silane, such as for example aminopropylaminoethylsilane or aminoethylaminopropyltrimethoxy. | 04-30-2009 |
20100006799 | Method and Composition for Selectively Stripping Nickel from a Substrate - A method of stripping nickel from a printed wiring board comprises providing a printed wiring board with a nickel deposit on a surface and contacting the nickel deposit with phosphate ions and an oxidizer. An aqueous solution comprises ammonium ions, phosphate ions and an oxidizing agent present in amounts effective to strip nickel. An aqueous solution comprises about 1% to about 10% by weight hydrogen peroxide and about 5% to about 30% by weight of an ammonium phosphate. A method of pre-treating a copper substrate comprises providing a printed wiring board having a copper substrate and contacting the copper substrate with phosphate ions, and an oxidizer. A method of neutralizing permanganate on a printed wiring board comprises providing a printed wiring board with a permanganate residue on the printed wiring board and contacting the permanganate residue with phosphate ions, and an oxidizer. | 01-14-2010 |
20100032613 | Etchant composition, and methods of patterning conductive layer and manufacturing flat panel display device using the same - An etchant composition, and methods of patterning a conductive layer and manufacturing a flat panel display device using the same are provided. The etchant composition may include phosphoric acid, nitric acid, acetic acid, water and an additive, wherein the additive includes a chlorine-based compound, a nitrate-based compound, and an oxidation regulator. In addition, the flat panel display device may be manufactured by patterning a gate electrode, source/drain electrodes and a pixel electrode using the same etchant composition. The gate electrode, source/drain electrodes and the pixel electrode may be formed of different conductive materials. Accordingly, processes are simplified so that manufacturing costs may be reduced and productivity may be improved. | 02-11-2010 |
20100096584 | Polishing Composition and Polishing Method Using the Same - A polishing composition used for chemical mechanical planarization of a substrate containing a noble metal layer is provided. The polishing composition contains positively-charged abrasive particles such as alpha-Al | 04-22-2010 |
20100163787 | POLISHING COMPOSITION - A polishing composition of the invention is a polishing composition which is suitable for polishing a metal film, which is so-called final polishing, and contains colloidal silica having an average particle size of 20 nm or more and less than 80 nm which is determined by particle size distribution measurement using a light scattering method as abrasive grains; and at least one selected from iodic acid and its salt as an oxidizing agent, with the balance of water. By containing such components, the polishing composition shows non-selectivity, while being sufficiently suppressed in dishing and erosion. | 07-01-2010 |
20100301265 | POLISHING SLURRY AND METHOD OF POLISHING - A polishing slurry comprises a metal-oxidizing agent, a metal anticorrosive agent, an oxidized metal dissolving agent and water. The oxidized metal dissolving agent is at least one kind selected from the group consisting of an acid in which the negative value of the logarithm of the dissociation constant Ka (pKa) of a first dissociable acid group is 3.5 or more, an ammonium salt of the acid and an organic acid ester of the acid. The pH of the polishing slurry is within the range of 3 to 4. The concentration of the metal-oxidizing agent is within the range of 0.01 to 3 percent by weight. In the wiring-formation process of the semiconductor device, the conductor used for the barrier layer can be polished at a high polishing rate by using the polishing slurry having the low polishing particle concentration and the low metal anticorrosive agent concentration. | 12-02-2010 |
20110140035 | CHROMIUM-FREE PICKLE FOR PLASTIC SURFACES - A pickling solution for the surface pre-treatment of plastic surfaces in preparation for metallization, the solution comprising a source of Mn(VII) ions; and an inorganic acid; wherein the pickling solution is substantially free of chromium (VI) ions, alkali ions, and alkaline-earth ions. | 06-16-2011 |
20110198531 | COMPOSITION FOR POLISHING SILICON NITRIDE AND METHOD OF CONTROLLING SELECTIVITY USING SAME - A composition for polishing silicon nitride according to the present invention includes colloidal silica, a polishing aid including a phosphoric acid compound and a sulfuric acid compound. By further including an oxidizing agent, a first selectivity representing the ratio of a polishing speed for a metal layer to a polishing speed for a silicon nitride layer and a second selectivity representing the ratio of a polishing speed for an oxide insulating layer to a polishing speed for a silicon nitride are controlled. | 08-18-2011 |
20120112124 | ALUMINUM ETCHANT - An aluminum etchant includes 3-30 wt % of hydrochloric acid, 4-20 wt % of sulfuric acid, and water for the rest. The etchant can produce circuits of 200-25 μm wide on an aluminum foil or aluminum plate. The circuit has good quality. Therefore, the invention is suitable for miniaturized products that require higher precision. | 05-10-2012 |
20120145951 | HIGHLY DILUTABLE POLISHING CONCENTRATES AND SLURRIES - The present disclosure provides a concentrate for use in chemical mechanical polishing slurries, and a method of diluting that concentrate to a point of use slurry. The concentrate comprises abrasive, complexing agent, and corrosion inhibitor, and the concentrate is diluted with water and oxidizer. These components are present in amounts such that the concentrate can be diluted at very high dilution ratios, without affecting the polishing performance. | 06-14-2012 |
20120256122 | COMPOSITION FOR ETCHING OF RUTHENIUM-BASED METAL, AND PROCESS FOR PREPARATION OF THE SAME - A composition for etching of a ruthenium-based metal, in which there are added and mixed at least a bromine-containing compound, an oxidizing agent, a basic compound and water, wherein the amount of bromine-containing compound added is 2-25 mass %, as bromine, and the amount of oxidizing agent added is 0.1-12 mass %, with respect to the total mass, and the pH is at least 10 and less than 12. It is possible to accomplish efficient etching of ruthenium-based metals. | 10-11-2012 |
20130009090 | Aluminum Etchant - An aluminum etchant includes 3-30 wt % of hydrochloric acid, 4-20 wt % of sulfuric acid, 1-5 wt % of oxidizing agent, 0.5-2 wt % of surfactant, and water for the rest. The etchant can produce circuits of 200-25 μm wide on an aluminum foil or aluminum plate. The circuit has good quality. Therefore, the invention is suitable for miniaturized products that require higher precision. | 01-10-2013 |
20130075651 | METHOD FOR PRODUCING PURIFIED ACTIVE SILICIC ACID SOLUTION AND SILICA SOL - A method for producing an active silicic acid solution in which the existing amount of foreign matters as plate-like fine particles is reduced and a method for producing a silica sol in which such foreign matters are reduced. The method fulfills the following condition: the existing amount of plate-like fine particles having a length of one side of 0.2 to 4.0 μm and a thickness of 1 to 100 nm is measured to be 0% to 30% in accordance with measuring method A, the method including the steps of: preparing an active silicic acid solution by subjecting an alkali silicate aqueous solution having a silica concentration of 0.5% by mass to 10.0% by mass to cation-exchange to remove alkaline components; and filtering the active silicic acid solution through a filter whose removal rate of particles having a primary particle size of 1.0 μm is 50% or more. | 03-28-2013 |
20130341557 | METHOD FOR REFRESHING AN ACID BATH SOLUTION - A method for refreshing an acid bath solution includes determining a concentration of phosphoric acid in the acid bath solution and determining a concentration of hydrochloric acid in the acid bath solution. The method further includes calculating a volume of phosphoric acid to add to the acid bath solution to achieve a predetermined concentration of phosphoric acid in the acid bath solution. In addition, the method includes calculating a volume of hydrochloric acid to add to the acid bath solution with the volume of phosphoric acid to increase the acid bath solution to a predetermined volume, and adding the volume of phosphoric acid and the volume of hydrochloric acid to the acid bath solution. | 12-26-2013 |
20140264153 | Processing System and Method for Providing a Heated Etching Solution - Embodiments of the invention provide a processing system and a method for processing with a heated etching solution. In one example, tight control over temperature and hydration level of an acidic etching solution is provided. According to one embodiment, the method includes forming the heated etching solution in a first circulation loop, providing the heated etching solution in the process chamber for treating a substrate, forming an additional heated etching solution in a second circulation loop, and supplying the additional heated etching solution to the first circulation loop. According to one embodiment, the processing system includes a process chamber for treating the substrate with the heated etching solution, a first circulation loop for providing the heated etching solution into the process chamber, and a second circulation loop for forming an additional heated etching solution and supplying the additional heated etching solution to the first circulation loop. | 09-18-2014 |
20150053887 | POLISHING COMPOSITION - The polishing composition of the present invention is a polishing composition for polishing a tungsten-containing metal layer formed on an insulating layer, the polishing composition comprising: abrasive grains; one or more halogen acids selected from the group consisting of iodic acid, iodous acid, and hypoiodous acid; a strong acid; a hydrogen-ion-supplying agent; and water. | 02-26-2015 |
20150069291 | METHODS OF MANUFACTURING ABRASIVE PARTICLE AND POLISHING SLURRY - Provided is a method of manufacturing an abrasive particle including a mother particle and a plurality of auxiliary particles formed on a surface of the mother particle, and a method of manufacturing a polishing slurry in which the abrasive particle is mixed with a polishing accelerating agent and a pH adjusting agent. | 03-12-2015 |
20150361342 | High-Efficiency and High-Quality Acidic Cupric Chloride Etchant for Printed Circuit Board - A high-efficiency and high-quality acidic cupric chloride etchant for printed circuit board, which contains cupric chloride, a sub-etchant and an oxidant, where the sub-etchant includes (in percentage by weight) 1%-36.5% of Hcl; 0.01%-45% of one or more compounds selected from FeCl | 12-17-2015 |
20160024381 | CHROMIUM-FREE PICKLE FOR PLASTIC SURFACES - A pickling solution for the surface pre-treatment of plastic surfaces in preparation for metallization, the solution comprising a source of Mn(VII) ions; and an inorganic acid; wherein the pickling solution is substantially free of chromium (VI) ions, alkali ions, and alkaline-earth ions. | 01-28-2016 |
20160153095 | POLISHING COMPOSITION | 06-02-2016 |
252790300 | Fluorine compound containing | 32 |
20080210900 | Selective Wet Etchings Of Oxides - The present invention relates to a wet etching composition including a sulfonic acid, a phosphonic acid, a phosphinic acid or a mixture of any two or more thereof, and a fluoride, and to a process of selectively etching oxides relative to nitrides, high-nitrogen content silicon oxynitride, metal, silicon or silicide. The process includes providing a substrate comprising oxide and one or more of nitride, high-nitrogen content silicon oxynitride, metal, silicon or silicide in which the oxide is to be etched; applying to the substrate for a time sufficient to remove a desired quantity of oxide from the substrate the etching composition; and removing the etching composition, in which the oxide is removed selectively. | 09-04-2008 |
20080224092 | Etchant for metal - An etchant for a metal is described. In one example, the etchant includes ammonium persulfate ((NH | 09-18-2008 |
20080283796 | Compositions for Dissolution of Low-K Dielectric Films, and Methods of Use - An improved composition and method for cleaning the surface of a semiconductor wafer are provided. The composition can be used to selectively remove a low-k dielectric material such as silicon dioxide, a photoresist layer overlying a low-k dielectric layer, or both layers from the surface of a wafer. The composition is formulated according to the invention to provide a desired removal rate of the low-k dielectric and/or photoresist from the surface of the wafer. By varying the fluorine ion component, and the amounts of the fluorine ion component and acid, component, and controlling the pH, a composition can be formulated in order to achieve a desired low-k dielectric removal rate that ranges from slow and controlled at about 50 to about 1000 angstroms per minute, to a relatively rapid removal of low-k dielectric material at greater than about 1000 angstroms per minute. The composition can also be formulated to selectively remove a photoresist layer, leaving the underlying low-k dielectric layer essentially intact. | 11-20-2008 |
20090146101 | ETCHANT FOR METAL ALLOY HAVING HAFNIUM AND MOLYBDENUM - An etchant for etching a metal alloy having hafnium and molybdenum includes 20 to 80 percent by weight of nitric acid, 1 to 49 percent by weight of hydrofluoric acid, 1 to 96 percent by weight of sulfuric acid, and 1 to 30 percent by weight of water, based on the total weight of the etchant. | 06-11-2009 |
20090256109 | CONDITIONING AGENT FOR THE ETCHING OF ENAMEL LESIONS - The invention relates to a composition which comprises
| 10-15-2009 |
20100163788 | LIQUID CLEANER FOR THE REMOVAL OF POST-ETCH RESIDUES - Cleaning compositions and processes for cleaning post-plasma etch residue from a microelectronic device having said residue thereon. The composition achieves highly efficacious cleaning of the residue material, including titanium-containing, copper-containing, tungsten-containing, and/or cobalt-containing post-etch residue from the microelectronic device while simultaneously not damaging the interlevel dielectric, metal interconnect material, and/or capping layers also present thereon. In addition, the composition may be useful for the removal of titanium nitride layers from a microelectronic device having same thereon. | 07-01-2010 |
20100320416 | FLUORINATED SULFONAMIDE SURFACTANTS FOR AQUEOUS CLEANING SOLUTIONS - Described are anionic N-substituted fluorinated sulfonamide surfactants, and use thereof in cleaning and in acid etch solutions. The cleaning and etch solutions are used with a wide variety of substrates, for example, in the cleaning and etching of silicon oxide-containing substrates. | 12-23-2010 |
20110062375 | SILICON WAFER RECLAMATION PROCESS - An etchant for removing a porous low-k dielectric layer on a semiconductor substrate includes a hydrofluoric acid-based solvent, a dilating additive for dilating the pores in the porous low-k dielectric, and a passivating additive that forms a passivation layer at the interface between the low-k dielectric layer and the semiconductor substrate. | 03-17-2011 |
20110073801 | Composition for etching silicon oxide and method of forming a contact hole using the same - In a composition for etching silicon oxide, and a method of forming a contact hole using the composition, the composition which includes from about 0.01 to about 2 percent by weight of ammonium bifluoride, from about 2 to about 35 percent by weight of an organic acid, from about 0.05 to about 1 percent by weight of an inorganic acid, and a remainder of a low polar organic solvent. The composition may reduce damages to a metal silicide pattern that may be exposed in an etching process performed for forming the contact hole. | 03-31-2011 |
20110240912 | TITANIUM ETCHANT COMPOSITION AND METHOD OF FORMING A SEMICONDUCTOR DEVICE USING THE SAME - A titanium etchant composition and a method of forming a semiconductor device using the same, the titanium etchant composition including a titanium remover; a corrosion inhibitor; and a deionized water; wherein the corrosion inhibitor includes 5-aminotetrazole. | 10-06-2011 |
20110297873 | ETCHING SOLUTION COMPOSITIONS FOR METAL LAMINATE FILMS - Disclosed are etching solution compositions that comprise fluorine compounds and iron ions, which are used for bulk etching of metal laminate films wherein a layer comprising aluminum or an aluminum alloy is laminated on top and a layer comprising titanium or a titanium alloy on bottom, and an etching method using said etching solution compositions. | 12-08-2011 |
20120007019 | WET ETCHING SOLUTION - A wet etching solution includes hydrogen fluoride in an amount of about 0.1% to about 3% by weight of the etching solution, an inorganic acid in an amount of about 10% to about 40% by weight of the etching solution, the inorganic acid being one or more of nitric acid, sulfuric acid, and/or hydrochloric acid, a nonionic surfactant in an amount of about 0.0001% to about 5% by weight of the etching solution, the surfactant including one or ore of alkylphenol ethoxylate and/or ammonium lauryl sulfate, and water. | 01-12-2012 |
20120032108 | PRINTABLE ETCHING MEDIA FOR SILICON DIOXIDE AND SILICON NITRIDE LAYERS - The present invention relates to a novel printable etching medium having non-Newtonian flow behaviour for the etching of surfaces in the production of solar cells, and to the use thereof. The present invention furthermore also relates to etching and doping media which are suitable both for the etching of inorganic layers and also for the doping of underlying layers. In particular, they are corresponding particle-containing compositions by means of which extremely fine structures can be etched very selectively without damaging or attacking adjacent areas. | 02-09-2012 |
20120037843 | AZEOTROPE-LIKE COMPOSITION OF 2-CHLORO-1,1,1,2-TETRAFLUOROPROPANE (HCFC-244bb) AND HYDROGEN FLUORIDE (HF) - Provided are azeotropic and azeotrope-like compositions of 2-chloro-1,1,1,2-tetrafluoropropane (HCFC-244bb) and hydrogen fluoride (HF). Such azeotropic and azeotrope-like compositions are useful as intermediates in the production of 2,3,3,3-tetrafluoropropene (HFO-1234yf). | 02-16-2012 |
20120056126 | FINE-PROCESSING AGENT AND FINE-PROCESSING METHOD - Provided is a fine-processing agent which, when fine-processing a laminated film stacked at least with a silicon dioxide film and a silicon nitride film, can selectively fine-process the silicon dioxide film. Also provided is a fine-processing method utilizing the fine-processing agent. The fine-processing agent is characterized by including: (a) 0.01-15.0 weight % hydrogen fluoride and/or 0.1-40.0 weight % ammonium fluoride, (b) water, and (c) 0.001-10.00 weight % water-soluble polymer selected from among a group consisting of acrylic acid, ammonium acrylate, acrylic acid ester, acrylamide, styrenesulfonic acid, ammonium styrenesulfonate, and styrenesulfonic acid ester. | 03-08-2012 |
20120085965 | TWO COMPONENT ETCHING - The object of the present invention is a new inkjet printable etching composition comprising an etchant, which is activated by a second component. Thus, a further object is the use of this new composition in a process for the etching of surfaces semiconductor devices or surfaces of solar cell devices. | 04-12-2012 |
20120161067 | DENTAL ETCHING GEL COMPOSITION AND METHOD OF USE THEREOF - The present invention provides a dental etching gel composition including phosphoric acid in aqueous solution form, a viscosity-enhancing agent and optionally additives, in which the viscosity-enhancing agent is carboxymethyl cellulose (CMC) with the following properties:
| 06-28-2012 |
20120187335 | WET ETCHANTS INCLUDING AT LEAST ONE ETCH BLOCKER - Methods for preventing isotropic removal of materials at corners formed by seams, keyholes, and other anomalies in films or other structures include use of etch blockers to cover or coat such corners. This covering or coating prevents exposure of the corners to isotropic etch solutions and cleaning solutions and, thus, prevents higher material removal rates at the corners than at smoother areas of the structure or film. Solutions, including wet etchants and cleaning solutions, that include at least one type of etch blocker are also disclosed, as are systems for preventing higher rates of material removal at corners formed by seams, crevices, or recesses in a film or other structure. Semiconductor device structures in which etch blockers are located so as to prevent isotropic etchants from removing material from corners of seams, crevices, or recesses in a surface of a film or other structure at undesirably high rates are also disclosed. | 07-26-2012 |
20120228543 | METHOD FOR PURIFYING FLUORIDE ETCHING SOLUTION BY USING HYDROXIDE COMPOUND AND ION EXCHANGE RESIN ABSORPTION - A method for purifying fluoride etching solution is provided. The method begins with a reaction by hydroxide gas or solution to achieve a balance pH condition for the fluoride etching solution. Subsequently, the treated etching solution can be fed by constant velocity pump to a basic anion exchange resin column(s). The basic anion exchange resins remove various contaminants resulting in a saleable product to a wide range of industrial applications. The final solution is collected in a finished product storage tank. The degree of purification by basic anion exchange resin can be verified, if needed at all, thereby making ammonium fluoride (AF), ammonium bifluoride (ABF), anhydrous hydrogen fluoride (AHF) and fluoride mixture to meet the application of industries or different market's application. Further, the ion exchange resins can be regenerated as needed to extend the useful life and system capacity. | 09-13-2012 |
20120326076 | TOOL FOR MANUFACTURING SEMICONDUCTOR STRUCTURES AND METHOD OF USE - A tool and method is provided for mixing multiple components and feeding a single blend of the multiple components into the tool. The method includes adjusting a concentration of etchant solution. The method includes determining an etch target for each batch of wafers of a plurality of batches of wafers entering an etch chamber of a wafer processing tool. The method further includes adjusting a concentration of 40% NH | 12-27-2012 |
20130048904 | ETCHING LIQUID FOR A COPPER/TITANIUM MULTILAYER THIN FILM - The present invention provides an etching liquid for a multilayer thin film containing a copper layer and a titanium layer, and a method of using it for etching a multilayer thin film containing a copper layer and a titanium layer, that is, an etching liquid for a multilayer thin film containing a copper layer and a titanium layer, which comprises (A) hydrogen peroxide, (B) nitric acid, (C) a fluoride ion source, (D) an azole, (E) a quaternary ammonium hydroxide and (F) a hydrogen peroxide stabilizer and has a pH of from 1.5 to 2.5, and a etching method of using it. | 02-28-2013 |
20130146805 | ETCHANT FOR CONTROLLED ETCHING OF GE AND GE-RICH SILICON GERMANIUM ALLOYS - The present disclosure provides a chemical etchant which is capable of removing Ge and Ge-rich SiGe alloys in a controlled manner. The chemical etchant of the present disclosure includes a mixture of a halogen-containing acid, hydrogen peroxide, and water. Water is present in the mixture in an amount of greater than 90% by volume of the entire mixture. The present disclosure also provides a method of making such a chemical etchant. The method includes mixing, in any order, a halogen-containing acid and hydrogen peroxide to provide a halogen-containing acid/hydrogen peroxide mixture, and adding water to the halogen-containing acid/hydrogen peroxide mixture. Also disclosed is a method of etching a Ge or Ge-rich SiGe alloy utilizing the chemical etchant of the present application. | 06-13-2013 |
20140061531 | METHODS, PROCESS AND FABRICATION TECHNOLOGY FOR HIGH-EFFICIENCY LOW-COST CRYSTALLINE SILICON SOLAR CELLS - Disclosed is a method, process, solar cell design, and fabrication technology for high-efficiency, low-cost, crystalline silicon (Si) solar cells including but not restricted to solar grade single crystal Si (c-Si), multi-crystalline Si (mc-Si), poly-Si, and micro-Si solar cells and solar modules. The RTWCG solar cell fabrication technology creates a RTWCG SiOx thin film antireflection coating (ARC) with a graded index of refraction and a selective emitter (SE). The resulting top surface of the SiOx oxide can be textured (TO) concomitant with the growth process or through an additional mild wet chemical step. | 03-06-2014 |
20140103251 | COMPOSITIONS FOR USE IN SEMICONDUCTOR DEVICES - An improved composition and method for cleaning a surface of a semiconductor wafer are provided. The composition can be used to selectively remove a low-k dielectric material such as silicon dioxide, a photoresist layer overlying a low-k dielectric layer, or both layers from the surface of the wafer. The composition is formulated according to the invention to provide a desired removal rate of the low-k dielectric and/or photoresist from the surface of the wafer. By varying a fluorine ion component, and the amounts of the fluorine ion component and an acid component, and controlling the pH, a composition can be formulated in order to achieve a desired low-k dielectric removal rate that ranges from slow and controlled at about 50 to about 1000 angstroms per minute, to a relatively rapid removal of low-k dielectric material at greater than about 1000 angstroms per minute. The composition can also be foimulated to selectively remove the photoresist layer, leaving the underlying low-k dielectric layer essentially intact. | 04-17-2014 |
20140264154 | AZEOTROPIC COMPOSITIONS OF 1,3,3-TRICHLORO-1,1-DIFLUOROPROPANE AND HYDROGEN FLUORIDE - Provided are azeotropic or azeotrope-like mixtures of 1,3,3-trichloro-1,1-difluoropropane (HCFO-242fa) and hydrogen fluoride. Such compositions are useful as a feed stock or intermediate in the production of HFC245fa and HCFO1233zd. | 09-18-2014 |
20140264155 | High-selectivity wet patterning of source-drain electrodes over taos for a bce device structure - Methods and formulations for the selective etching of etch stop layers deposited above metal-based semiconductor layers used in the manufacture of TFT-based display devices are presented. The formulations are based on an alkaline solution. Methods and formulations for the selective etching of molybdenum-based and/or copper-based source/drain electrode layers deposited above metal-based semiconductor layers used in the manufacture of TFT-based display devices are presented. The formulations are based on an alkaline solution. | 09-18-2014 |
20140332713 | ETCHING METHOD AND ETCHING LIQUID USED THEREIN - An etching method having the step of: applying an etching liquid to a substrate, the etching liquid containing: a fluorine ion, a nitrogen-containing compound having at least 2 of nitrogen-containing structural units, and water, the etching liquid having a pH of being adjusted to 5 or less; and etching a titanium compound in the substrate. | 11-13-2014 |
20150097139 | COMPOSITIONS FOR USE IN SEMICONDUCTOR DEVICES - An improved composition and method for cleaning a surface of a semiconductor wafer are provided. The composition can be used to selectively remove a low-k dielectric material such as silicon dioxide, a photoresist layer overlying a low-k dielectric layer, or both layers from the surface of the wafer. The composition is formulated according to the invention to provide a desired removal rate of the low-k dielectric and/or photoresist from the surface of the wafer. By varying a fluorine ion component, and the amounts of the fluorine ion component and an acid component, and controlling the pH, a composition can be formulated in order to achieve a desired low-k dielectric removal rate that ranges from slow and controlled at about 50 to about 1000 angstroms per minute, to a relatively rapid removal of low-k dielectric material at greater than about 1000 angstroms per minute. The composition can also be formulated to selectively remove the photoresist layer, leaving the underlying low-k dielectric layer essentially intact. | 04-09-2015 |
20160032186 | COMPOSITIONS AND METHODS FOR SELECTIVELY ETCHING TITANIUM NITRIDE - Semi-aqueous compositions useful for the selective removal of titanium nitride and/or photoresist etch residue materials relative to metal conducting, e.g., tungsten and copper, and insulating materials from a microelectronic device having same thereon. The semi-aqueous compositions contain at least one oxidant, at least one etchant, and at least one organic solvent, may contain various corrosion inhibitors to ensure selectivity. | 02-04-2016 |
20160102250 | REVERSE OSMOSIS FOR PURIFYING MIXTURES OF HYDROFLUORIC ACID AND NITRIC ACID - Disclosed is a method of purifying a solution containing hydrofluoric acid, nitric acid and at least one silicon impurity by treating the solution with at least one reverse osmosis membrane. According to the method of the present invention, silicon impurities contained in the solution containing hydrofluoric acid and nitric acid can be selectively removed or reduced. This method can be advantageously used in the photovoltaic industry or in the battery component industry. | 04-14-2016 |
20160168722 | SOLUTION AND PROCESS TO TREAT SURFACES OF COPPER ALLOYS IN ORDER TO IMPROVE THE ADHESION BETWEEN THE METAL SURFACE AND THE BONDED POLYMERIC MATERIAL | 06-16-2016 |
20170233650 | ETCH CUTTING SOLUTION FOR USE ON GLASS SUBSTRATES | 08-17-2017 |
252790400 | With organic material | 21 |
20080224093 | ETCHANT FOR SIGNAL WIRE AND METHOD OF MANUFACTURING THIN FILM TRANSISTOR ARRAY PANEL USING ETCHANT - Gate lines including a lower Al—Nd layer and an upper MoW layer, data lines including a MoW layer, and pixel electrodes including an IZO layer are patterned using a single etchant. The etchant contains a phosphoric acid of about 50-60%, a nitric acid of about 6-10%, an acetic acid of about 15-25%, a stabilizer of about 2-5% stabilizer, and deionized water. The stabilizer includes oxy-hydride inorganic acid represented by M(OH) | 09-18-2008 |
20090289217 | POLISHING COMPOSITION - A polishing composition which achieves surfaces with high planarity and the reduction of corrosions in the wiring metal surface at the same time is provided. | 11-26-2009 |
20100176336 | Systems, methods and solutions for chemical polishing of GaAs wafers - Chemical polishing solutions and methods are disclosed for the chemical polishing of GaAs wafers. An exemplary chemical polishing solution consistent with the innovations herein may comprise dichloroisocyanurate, sulfonate, acid pyrophosphate, bicarbonate and carbonate. An exemplary chemical polishing method may comprise polishing a wafer in a chemical polishing apparatus in the presence of such a chemical polishing solution. Chemical polishing solutions and methods herein make it possible, for example, to improve wafer quality, decrease costs, and/or reduce environmental pollution. | 07-15-2010 |
20100230631 | ETCHING LIQUID COMPOSITION - A metal film such as an aluminum film or an aluminum alloy film is etched with good controllability, preventing a resist from bleeding, to have a proper taper configuration and superior flatness. | 09-16-2010 |
20100252775 | METHOD FOR FORMING AN INDIUM CAP LAYER - An indium cap layer is formed by blanket depositing indium onto a surface of metallic interconnects separated by interlayer dielectric, and then selectively chemically etching the indium located on the interlayer dielectric leaving an indium cap layer. Etchants containing a strong acid are provided for selectively removing the indium. | 10-07-2010 |
20100314576 | COMPOSITIONS FOR CMP OF SEMICONDUCTOR MATERIALS - The invention provides a composition for chemical-mechanical polishing. The composition comprises an abrasive, a first metal rate polishing modifier agent, a second metal rate polishing modifier agent, and a liquid carrier. In one embodiment, the first metal rate polishing modifier agent has a standard reduction potential less than 0.34 V relative to a standard hydrogen electrode, and the second metal rate polishing modifier agent has a standard reduction potential greater than 0.34 V relative to a standard hydrogen electrode. In other embodiments, the first and second metal rate polishing modifier agents are different oxidizing agents. | 12-16-2010 |
20120138851 | POLISHING COMPOSITION AND POLISHING METHOD - A polishing composition contains at least one water soluble polymer selected from the group consisting of polyvinylpyrrolidone and poly(N-vinylformamide), and an alkali, and preferably further contains at least one of a chelating agent and an abrasive grain. The water soluble polymer preferably has a weight average molecular weight of 6,000 to 4,000,000. The polishing composition is mainly used in polishing of the surfaces of semiconductor wafers such as silicon wafers, especially used in preliminary polishing of the surfaces of such wafers. | 06-07-2012 |
20120319033 | ETCHING SOLUTION FOR MULTILAYER THIN FILM HAVING COPPER LAYER AND MOLYBDENUM LAYER CONTAINED THEREIN - Discloses are an etching solution for a multilayer thin film having a copper layer and a molybdenum layer contained therein; and an etching method of a multilayer thin film having a copper layer and a molybdenum layer contained therein using the same. Specifically disclosed are an etching solution for a multilayer thin film having a copper layer and a molybdenum layer contained therein, which includes (A) hydrogen peroxide, (B) a fluorine atom-free inorganic acid, (C) an organic acid, (D) an amine compound having a carbon number of from 2 to 10 and having an amino group and a hydroxyl group in a total group number of 2 or more, (E) an azole, and (F) a hydrogen peroxide stabilizer, and which has a pH of from 2.5 to 5; and an etching method using the same. | 12-20-2012 |
20130092872 | COMPOSITIONS FOR ETCHING AND METHODS OF FORMING A SEMICONDUCTOR DEVICE USING THE SAME - Etching compositions are provided. The etching composition includes a phosphoric acid, ammonium ions and a silicon compound. The silicon compound includes a silicon atom, an atomic group having an amino group combined with the silicon atom, and at least two oxygen atoms combined with the silicon atom. Methods utilizing the etching compositions are also provided. | 04-18-2013 |
20130105729 | ETCHING LIQUID FOR FILM OF MULTILAYER STRUCTURE CONTAINING COPPER LAYER AND MOLYBDENUM LAYER | 05-02-2013 |
20130207030 | WET ETCHING METHODS FOR COPPER REMOVAL AND PLANARIZATION IN SEMICONDUCTOR PROCESSING - Exposed copper regions on a semiconductor substrate can be etched by a wet etching solution comprising (i) one or more complexing agents selected from the group consisting of bidentate, tridentate, and quadridentate complexing agents; and (ii) an oxidizer, at a pH of between about 5 and 12. In many embodiments, the etching is substantially isotropic and occurs without visible formation of insoluble species on the surface of copper. The etching is useful in a number of processes in semiconductor fabrication, including for partial or complete removal of copper overburden, for planarization of copper surfaces, and for forming recesses in copper-filled damascene features. Examples of suitable etching solutions include solutions comprising a diamine (e.g., ethylenediamine) and/or a triamine (e.g., diethylenetriamine) as bidentate and tridentate complexing agents respectively and hydrogen peroxide as an oxidizer. In some embodiments, the etching solutions further include pH adjustors, such as sulfuric acid, aminoacids, and carboxylic acids. | 08-15-2013 |
20130341558 | ETCHING SOLUTION FOR COPPER LEAD OF TFT ARRAY SUBSTRATE - The present invention relates to an etching solution for copper lead of TFT array substrate, which includes: primary oxidant, secondary oxidant, chelating agent, inhibitor, and additive. The primary oxidant is hydrogen peroxide and the secondary oxidant is phosphoric acid, sulfuric acid, and nitric acid. The chelating agent is amino compound. The inhibitor is amino azole compound and carboxylate compound. The additive is amine compound containing amino nitrogen and coordinating carboxylate oxygen atom. Through adoption of novel components and types of chelating agent and additive, the etching solution improves the characteristics of relatively short process window for copper lead etching solution, reduces the difficult of engineering control, improves stability of engineering operation and improves yield rate, increases stability of shelf time to thereby provide stable etching performance even in the rear half of shelf time, and extends lifespan (≧5000 ppm). | 12-26-2013 |
20140021400 | PRINTABLE ETCHANT COMPOSITIONS FOR ETCHING SILVER NANOWARE-BASED TRANSPARENT, CONDUCTIVE FILM - The present invention relates to a novel printable paste composition and its use in etching conductive films formed by a plurality of interconnecting silver nano-wires. After etching, the conductive film has a pattern of conductive and non-conductive areas with low visibility. The etched films are suitable as a transparent electrode in visual display devices such as touch screens, liquid crystal displays, plasma display panels and the like. | 01-23-2014 |
20140306147 | CHROME-FREE METHODS OF ETCHING ORGANIC POLYMERS WITH MIXED ACID SOLUTIONS - A chrome-free acidic aqueous solution of sulfuric acid and one or more organic acids and manganese (II) and (III) ions is applied to an organic polymer surface to etch the surface. The etched surface is then plated with metal. | 10-16-2014 |
20150021513 | CMP SLURRY COMPOSITION FOR POLISHING AN ORGANIC LAYER AND METHOD OF FORMING A SEMICONDUCTOR DEVICE USING THE SAME - A chemical mechanical polishing (CMP) slurry composition for polishing an organic layer and a method of forming a semiconductor device using the same are disclosed. The CMP slurry composition may include from 0.001% to 5% by weight of oxide-polishing particles; from 0.1% to 5% by weight of an oxidant; from 0% to 5% by weight of a polishing regulator; from 0% to 3% by weight of a surfactant; from 0% to 3% by weight of a pH regulator; and from 79% to 99.889% by weight of deionized water. The use of the CMP slurry composition makes it possible to allow a silicon-free organic layer to be polished with a selectivity higher than 6:1 with respect to an oxide layer. | 01-22-2015 |
20150053888 | ETCHING LIQUID COMPOSITION AND ETCHING METHOD - The etching liquid composition of the present invention contains a ferric ion component; a hydrogen chloride component; and a component that is at least one type of compound selected from the group consisting of a compound represented by general formula (1) below and a straight chain or branched chain alcohol having 1 to 4 carbon atoms: | 02-26-2015 |
20150076396 | ETCHING COMPOSITIONS, METHODS AND PRINTING COMPONENTS - Liquid compositions for etching glass are disclosed herein. The liquid composition may include a non-active etching agent precursor that is inactive with respect to chemically etching glass in an amount of at least 2.5% by weight of the total composition, a binder and a liquid vehicle. The precursor may include an alkali metal salt having an activation temperature of at least 400° C. and when heated to above the activation temperature, the precursor yields an active etching agent suitable for chemical etching of glass. | 03-19-2015 |
20160024350 | METHODS OF MANUFACTURING ABRASIVE PARTICLE AND POLISHING SLURRY - Provided is a method of manufacturing an abrasive particle including a mother particle and a plurality of auxiliary particles formed on a surface of the mother particle, and a method of manufacturing a polishing slurry in which the abrasive particle is mixed with a polishing accelerating agent and a pH adjusting agent. | 01-28-2016 |
20160032185 | ETCHING COMPOSITION - An etching composition includes about 1 wt % to about 7 wt % of hydrogen peroxide, about 20 wt % to about 80 wt % of phosphoric acid, about 0.001 wt % to about 1 wt % of an amine or amide polymer, 0 wt % to about 55 wt % of sulfuric acid, and about 10 wt % to about 45 wt % of deionized water. | 02-04-2016 |
20160251547 | POLISHING SLURRY AND METHOD OF POLISHING SUBSTRATE USING THE SAME | 09-01-2016 |
20190144748 | Cu-MoTi ETCHING SOLUTION | 05-16-2019 |