Class / Patent application number | Description | Number of patent applications / Date published |
257102000 | With particular dopant material (e.g., zinc as dopant in GaAs) | 15 |
20080203424 | DIODE AND APPLICATIONS THEREOF - A diode with low substrate current leakage and suitable for BiCMOS process technology. A buried layer is formed on a semiconductor substrate. A connection region and well contact the buried layer. Isolation regions are adjacent to two sides of the buried layer, each deeper than the buried layer. The isolation regions and the buried layer isolate the connection zone and the well from the substrate. The first doped region in the well is a first electrode. The well and the connection region are electrically connected, acting as a second electrode. | 08-28-2008 |
20080210973 | ZINC-OXIDE-BASED SEMICONDUCTOR LIGHT-EMITTING DEVICE AND METHOD OF FABRICATING THE SAME - The invention discloses a zinc-oxide-based semiconductor light-emitting device and the fabrication thereof The method according to the invention, first, is to prepare a substrate. Next, by an atomic-layer-deposition-based process, a ZnO-based multi-layer structure is formed on or over the substrate where the ZnO-based multi-layer structure includes a light-emitting region. | 09-04-2008 |
20080224170 | Semiconductor wafer, light emitting diode print head, image forming apparatus, and method of producing semiconductor device - A nitride semiconductor wafer includes a substrate; a nitride compound semiconductor layer formed on the substrate; and an Al | 09-18-2008 |
20080246053 | P-Type Group III Nitride Semiconductor and Production Method Thereof - An object of the present invention is to provide a method for producing a p-type Group III nitride semiconductor which can be used to produce a light-emitting device exhibiting a low operation voltage and a sufficiently high reverse voltage. | 10-09-2008 |
20090001408 | Method for forming a semiconductor light-emitting device and a semiconductor light-emitting device - A semiconductor light-emitting device with a new layer structure is disclosed, where the current leaking path is not caused to enhance the current injection efficiency within the active layer. The device provides a mesa structure containing active layer and a p-type lower cladding layer on a p-type substrate and a burying layer doped with iron (Fe) to bury the mesa structure, where the burying layer shows a semi-insulating characteristic. The device also provides an n-type blocking layer arranged so as to cover at least a portion of the p-type buffer lower within the mesa structure. The n-type blocking layer prevents the current leaking from the burying layer to the p-type buffer layer, and the semi-insulating burying layer that covers the rest portion of the mesa structure not covered by the n-type blocking layer prevents the current leaking from the n-type blocking layer to the n-type cladding layer within the mesa structure. | 01-01-2009 |
20090072266 | SEMICONDUCTOR LIGHT EMITTING DEVICE - Disclosed herein is a semiconductor light emitting device including: a light emitting part formed of a multilayer structure arising from sequential stacking of a first compound semiconductor layer, an active layer, and a second compound semiconductor layer; a current block layer; and a burying layer, wherein a planar shape of the active layer is a strip shape in which a width of a center part is smaller than a width of both end parts, the current block layer is composed of third and fourth compound semiconductor layers, the burying layer is formed of a multilayer structure arising from sequential stacking of a first burying layer and a second burying layer, and an impurity for causing the second burying layer is such that a substitution site of the impurity in the second burying layer does not compete with a substitution site of an impurity in the third compound semiconductor layer. | 03-19-2009 |
20090090929 | LIGHT-EMITTING DIODE CHIP AND MANUFACTURING METHOD THEREOF - A light-emitting diode (LED) chip includes a substrate, a first semiconductor layer, an active layer, a second semiconductor layer and a groove. The first semiconductor layer, active layer and second semiconductor layer are formed on the substrate in sequence. The groove is formed in the first semiconductor layer, the active layer and the second semiconductor layer. | 04-09-2009 |
20100012970 | LIGHT EMITTING DIODE CHIP AND FABRICATING METHOD THEREOF - An LED chip includes a substrate, a semiconductor device layer, a wall structure, and a number of electrodes. The semiconductor device layer is disposed on the substrate and includes a first-type doped semiconductor layer disposed on the substrate, an active layer disposed on a portion of the first-type doped semiconductor layer, and a second-type doped semiconductor layer disposed on the active layer and having a first top surface. The wall structure is disposed on the first-type doped semiconductor layer that is not covered by the active layer and surrounds the active layer. Besides, the wall structure has a second top surface higher than the first top surface of the second-type doped semiconductor layer. Additionally, the electrodes are disposed on and electrically connected with the first-type doped semiconductor layer and the second-type doped semiconductor layer. | 01-21-2010 |
20100038674 | Light-Emitting Diode With Current-Spreading Region - A light-emitting diode (LED) device is provided. The LED device has a lower LED layer and an upper LED layer with a light-emitting layer interposed therebetween. A current blocking layer is formed in the upper LED layer such that current passing between an electrode contacting the upper LED layer flows around the current blocking layer. When the current blocking layer is positioned between the electrode and the light-emitting layer, the light emitted by the light-emitting layer is not blocked by the electrode and the light efficiency is increased. The current blocking layer may be formed by converting a portion of the upper LED layer into a resistive region. In an embodiment, ions such as magnesium, carbon, or silicon are implanted into the upper LED layer to form the current blocking layer. | 02-18-2010 |
20100207158 | SEMICONDUCTOR LIGHT EMITTING DEVICE - The embodiment discloses a semiconductor light emitting device. The semiconductor light emitting device includes a first conductive semiconductor layer; a first electrode layer below the first conductive semiconductor layer; a semiconductor layer at an outer peripheral portion of the first conductive semiconductor layer; an active layer on the first conductive semiconductor layer; a second conductive semiconductor layer on the active layer; and a second electrode layer on the second conductive semiconductor layer. | 08-19-2010 |
20110169045 | ORGANIC ELECTROLUMINESCENCE DEVICE - An organic electroluminescence device includes a plurality of organic semiconductor layers including an organic light-emitting layer and layered or disposed between a pair of anode and cathode opposed to each other. The device includes n-type-dopant-containing electron transport layer disposed between the cathode and the organic light-emitting layer. The n-type-dopant-containing electron transport layer includes an organic compound capable of transporting electrons as a first component which mixed with an n-type dopant of an electron donor of metallic atom or ion thereof as a second component. The organic electroluminescence device further includes an n-type-dopant blocking layer having an interface contacting with the n-type-dopant-containing electron transport layer to block the n-type dopant. The n-type-dopant blocking layer includes a heavy atom compound including at least one kind of heavy atoms with an atomic weight of 79 or more. | 07-14-2011 |
20110198666 | CHARGE TRANSPORT LAYERS AND ORGANIC ELECTRON DEVICES COMPRISING SAME - Provided are organic n-doped electron transport layers comprising at least one electron transport material and at least one electron rich dopant material and organic p-doped hole transport layers comprising at least one hole transport material and at least one electron deficient dopant material. | 08-18-2011 |
20110278641 | METHOD FOR PRODUCING AN OPTOELECTRONIC SEMICONDUCTOR CHIP AND OPTOELECTRONIC SEMICONDUCTOR CHIP - An optoelectronic semiconductor chip includes a semiconductor layer sequence having at least one doped functional layer having at least one dopant and at least one codopant, wherein the semiconductor layer sequence includes a semiconductor material having a lattice structure, one selected from the dopant and the codopant is an electron acceptor and the other an electron donor, the codopant is bonded to the semiconductor material and/or arranged at interstitial sites, and the codopant at least partly forms no bonding complexes with the dopant. | 11-17-2011 |
20140367735 | III NITRIDE SEMICONDUCTOR SUBSTRATE, EPITAXIAL SUBSTRATE, AND SEMICONDUCTOR DEVICE - In a semiconductor device | 12-18-2014 |
20160020361 | GROUP III NITRIDE SEMICONDUCTOR LIGHT-EMITTING DEVICE AND PRODUCTION METHOD THEREFOR - The present invention provides a Group III nitride semiconductor light-emitting device having a low drive voltage and a production method therefor. A p-type semiconductor layer formation step comprises a p-type cladding layer formation step of forming a p-side superlattice layer on a light-emitting layer by supplying a first raw material gas containing at least a Group III element and a dopant gas, a p-type intermediate layer formation step of forming a p-type intermediate layer on the p-side superlattice layer by supplying a first raw material gas and a dopant gas, a dopant gas supply step of supplying the dopant gas while stopping the supply of the first raw material gas after the p-type intermediate layer formation step, and a p-type contact layer formation step of forming a p-type contact layer on the p-type intermediate layer by supplying a first raw material gas and a dopant gas after the dopant gas supply step. | 01-21-2016 |