Class / Patent application number | Description | Number of patent applications / Date published |
257113000 | With light activation | 6 |
20140021508 | Thyristor-Based, Dual-Polarity Blocking Photo-Conductive Semiconductor Switch (PCSS) For Short Pulse Switching And Methods - A system and method utilizing thyristor-based Photo-Conductive Semiconductor Switches (PCSS) for short pulse switching in high power microwave and/or broadband electromagnetic pulse generation is disclosed. The PCSS consists of thyristor-type NPNP structure having multiple emitter regions enclosed by the base region and multiple emitter shorts to divert leakage currents for voltage holding. The PCSS also includes an optical aperture comprised of patterned metallic grids for light illumination and current collection. The device structure is so constructed that there is only one single bevel around the peripheral. The thyristor-based PCSS have dual polarities of voltage blocking and have better efficiency for light requirement to operate at longer pulse duration compared to diode-based and bulk-semiconductor-based PCSS. | 01-23-2014 |
20180024353 | OPTICAL SENSOR, SCANNER UNIT, AND IMAGE FORMING APPARATUS | 01-25-2018 |
257115000 | With electrical trigger signal amplification means (e.g., amplified gate, "pilot thyristor", etc.) | 2 |
20120098029 | PHOTONICALLY-ACTIVATED SINGLE-BIASFAST-SWITCHING INTEGRATED THYRISTOR - Preferred embodiments of the invention include a thyristor core that is single biased by a source, such as a power source (or a portion thereof) that is being switched through the thyristors. An optically activated transistor that is preferably a minority carrier device is in series with the thyristor core. The thyristor core has an optically activated gate. The turn-off of the thyristor can be accelerated by the turn-on (conduction state) of a gate switch, which ensures a unity gain turn-off of the core thyristor. | 04-26-2012 |
20130153953 | OPTICALLY TRIGGERED SEMICONDUCTOR DEVICE AND METHOD FOR MAKING THE SAME - A thyristor device includes a semiconductor body and a conductive anode. The semiconductor body has a plurality of doped layers forming a plurality of dopant junctions and includes an optical thyristor, a first amplifying thyristor, and a switching thyristor. The conductive anode is disposed on a first side of the semiconductor body. The optical thyristor is configured to receive incident radiation to generate a first electric current, and the first amplifying thyristor is configured to increase the first electric current from the optical thyristor to at least a threshold current. The switching thyristor switches to the conducting state in order to conduct a second electric current from the anode and through the semiconductor body. | 06-20-2013 |
257116000 | With light conductor means (e.g., light fiber or light pipe) integral with device or device enclosure or package | 2 |
20110284920 | LASER PUMPING OF THYRISTORS FOR FAST HIGH CURRENT RISE-TIMES - An optically triggered semiconductor switch includes an anode metallization layer; a cathode metallization layer; a semiconductor between the anode metallization layer and the cathode metallization layer and a photon source. The semiconductor includes at least four layers of alternating doping in the form P-N-P-N, in which an outer layer adjacent to the anode metallization layer forms an anode and an outer layer adjacent the cathode metallization layer forms a cathode and in which the anode metallization layer has a window pattern of optically transparent material exposing the anode layer to light. The photon source emits light having a wavelength, with the light from the photon source being configured to match the window pattern of the anode metallization layer. | 11-24-2011 |
257117000 | In groove or with thinned semiconductor portion | 1 |
20150091048 | OPTICALLY-TRIGGERED SILICON CONTROLLED RECTIFIER AND METHOD OF FABRICATION OF THE SAME - A device includes a semiconductor substrate having a plurality of doped layers forming first and second junctions. The semiconductor substrate includes a first surface and a second surface opposite the first surface. The device includes a plurality of waveguides defined by a plurality of glass inlaid channels defined within the first surface. Each of the plurality of glass inlaid channels extends through the second junction. The device includes a pattern of reflective elements associated with sidewalls of the plurality of glass inlaid channels to reflect light into the plurality of waveguides. A first electrically-conductive layer is disposed on the first surface and covers the plurality of glass inlaid channels. | 04-02-2015 |