Class / Patent application number | Description | Number of patent applications / Date published |
257798000 | MISCELLANEOUS | 31 |
20090309243 | MULTI-CORE INTEGRATED CIRCUITS HAVING ASYMMETRIC PERFORMANCE BETWEEN CORES - An integrated circuit in one embodiment includes asymmetric cores and an asymmetric core control circuit. At least one of the asymmetric cores is a different implementation of substantially the same function or subset of functionality as another core. The asymmetric core control circuit determines a performance parameter of an integrated circuit. The performance parameter may be the workload, the operating frequency, power consumption, quality of service, operating temperature or the like of the integrated circuit or a given portion of the integrated circuit. If the performance parameter is within a first range, the asymmetric core control circuit utilizes a first core to perform a function of the integrated circuit and idles a second core that is a different implementation of substantially the same function. If the performance parameter is within a second range, the core control circuit utilizes the second core to perform the function and idles the first core. | 12-17-2009 |
20100155969 | RESIN PASTE FOR DIE BONDING, METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE - The die bonding resin paste of the invention comprises a polyurethaneimide resin represented by the following general formula (I), a thermosetting resin, a filler and a printing solvent. | 06-24-2010 |
20110074050 | FILM FOR SEMICONDUCTOR DEVICE - The present invention provides a film for a semiconductor device, which is capable of preventing interface delamination between each of the films, a film lifting phenomenon, and transfer of the adhesive film onto the cover film even during transportation or after long-term storage in a low temperature condition. The film for a semiconductor device of the present invention is a film in which an adhesive film and a cover film are sequentially laminated on a dicing film, in which a peel force F | 03-31-2011 |
20110084413 | THERMOSETTING DIE-BONDING FILM - An object thereof is to provide a thermosetting die-bonding film that is capable of preventing warping of an adherend by suppressing curing contraction of the film after die bonding, and a dicing die-bonding film. The present invention relates to a thermosetting die-bonding film for adhering and fixing a semiconductor element onto an adherend, wherein the gel fraction in an organic component after thermal curing is performed by a heat treatment at 120° C. for 1 hour is 20% by weight or less, and the gel fraction in the organic component after thermal curing is performed by a heat treatment at 175° C. for 1 hour is in a range of 10 to 30% by weight. | 04-14-2011 |
20110175243 | METHOD FOR MANUFACTURING A SEMICONDUCTOR DIE AND A SEMICONDUCTOR DEVICE COMPRISING THE SEMICONDUCTOR DIE OBTAINED THEREBY - Disclosed is a method for dicing a semiconductor wafer. The method for dicing a semiconductor wafer prevents a die from being contaminated with silicon dust, generated during the dicing of the wafer, and thus prevents defects in a subsequent wire bonding step, such as defects in bonding wire, contamination of a semiconductor device, etc. The method for dicing a semiconductor wafer comprises the steps of: applying a fluorine-containing polymer coating agent onto one surface of a wafer having a circuit pattern formed thereon to form a polymer coating layer, before dicing the wafer. | 07-21-2011 |
20110187009 | ADHESIVE COMPOSITION, FILM-LIKE ADHESIVE, ADHESIVE SHEET AND SEMICONDUCTOR DEVICE - The adhesive composition of the invention comprises (A) a thermoplastic resin with a Tg of no higher than 100° C. and (B) a thermosetting component, wherein the (B) thermosetting component includes (B1) a compound with an allyl group and (B2) a compound with a maleimide group. | 08-04-2011 |
20110187010 | SEMICONDUCTOR CLEANING USING SUPERACIDS - A method of cleaning a substrate includes contacting a surface of a semiconductor substrate with a composition comprising a superacid. The semiconductor substrate may be a wafer. | 08-04-2011 |
20110210455 | DIE BOND FILM, DICING DIE BOND FILM, AND SEMICONDUCTOR DEVICE - The present invention provides a die bond film for adhering, onto a semiconductor element that is electrically connected to an adherend with a bonding wire, another semiconductor element and that enables loading of the other semiconductor element and improvement in the manufacturing yield of a semiconductor device by preventing deformation and cutting of the bonding wire, and a dicing die bond film. The die bond film of the present invention is a die bond film for adhering, onto a semiconductor element that is electrically connected to an adherend with a bonding wire, another semiconductor element, in which at least a first adhesive layer that enables a portion of the bonding wire to pass through inside thereof by burying the portion upon press bonding and a second adhesive layer that prevents the other semiconductor element from contacting with the bonding wire are laminated. | 09-01-2011 |
20120068366 | SELECTIVE ETCH CHEMISTRIES FOR FORMING HIGH ASPECT RATIO FEATURES AND ASSOCIATED STRUCTURES - An interlevel dielectric layer, such as a silicon oxide layer, is selectively etched using a plasma etch chemistry including a silicon species and a halide species and also preferably a carbon species and an oxygen species. The silicon species can be generated from a silicon compound, such as Si | 03-22-2012 |
20120098147 | PLASMA TREATMENT METHOD - A method for manufacturing a semiconductor device having fluorocarbon layers as insulating layers includes the steps of forming a first fluorocarbon (CFx | 04-26-2012 |
20120133061 | PHOTOSENSITIVE ADHESIVE, AND FILM ADHESIVE, ADHESIVE SHEET, ADHESIVE PATTERN, SEMICONDUCTOR WAFER WITH ADHESIVE LAYER, AND SEMICONDUCTOR DEVICE, WHICH ARE MADE USING SAME - To provide a photosensitive adhesive which is sufficiently excellent in terms of all the properties of attachment, pattern formability, thermocompression bondability and high-temperature adhesion, and which has thermocompression bondability for adherends after patterning by exposure and development, and is capable of alkali development, as well as a film adhesive, an adhesive sheet, an adhesive pattern, a semiconductor wafer with an adhesive layer and a semiconductor device, which employ the same. A photosensitive adhesive comprising (A) an imide group-containing resin with a fluoroalkyl group, (B) a radiation-polymerizable compound, (C) a photoinitiator and (D) a thermosetting component. | 05-31-2012 |
20120175790 | COMPOSITION FOR PATTERNABLE ADHESIVE FILM, PATTERNABLE ADHESIVE FILM, AND METHOD OF MANUFACTURING SEMICONDUCTOR PACKAGE USING THE SAME - A composition for a patternable adhesive film, a patternable adhesive film having the same, and a method of manufacturing a semiconductor package using the patternable adhesive film are provided. The composition contains a binder resin, a radical-polymerizable acrylate monomer, a photo-radical initiator, and a thermal-radical initiator without an epoxy resin. The composition may have good patternability, adhesiveness, and low-temperature stability, and be rapidly cured at a low temperature. | 07-12-2012 |
20120199993 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - In one embodiment, an adhesive layer is formed by applying a liquid adhesive to a semiconductor wafer whose wafer shape is maintained by a surface protective film attached to a first surface. A supporting sheet having a tacky layer is attached to a second surface of the semiconductor wafer. After the surface protective film is peeled, the supporting sheet is expanded to cleave the adhesive layer including the adhesive filled into the dicing grooves. The first surface of the semiconductor wafer is cleaned while an expansion state of the supporting sheet is maintained. Tack strength of portions corresponding to the dicing grooves of the tacky layer is selectively reduced before cleaning. | 08-09-2012 |
20120248634 | METHOD FOR MANUFACTURING FILM-LIKE ADHESIVE, ADHESIVE SHEET, SEMICONDUCTOR DEVICE, AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE - The method for manufacturing a film-like adhesive according to the present invention includes: applying an adhesive composition comprising (A) a radiation-polymerizable compound, (B) a photoinitiator and (C) a thermosetting resin, and having a solvent content of 5% by mass or lower and being liquid at 25° C., on a base material to thereby form an adhesive composition layer; and irradiating the adhesive composition layer with light to thereby form the film-like adhesive. | 10-04-2012 |
20120256326 | ADHESIVE COMPOSITION, SEMICONDUCTOR DEVICE MAKING USE THEREOF, AND PRODUCTION METHOD THEREOF - Disclosed is an adhesive composition used for adhesion of a semiconductor chip which contains a radiation polymerizable compound, a photoinitiator, and a thermosetting resin. When the adhesive composition forming an adhesive layer is brought to a B-stage by irradiation with light, the surface of the adhesive layer has a tack force of 200 gf/cm | 10-11-2012 |
20120256327 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREFOR - A semiconductor device and a manufacturing method therefor, wherein, during lift-off, no cracks due to internal stresses occur in the compound semiconductor layer. A method for manufacturing a semiconductor device having a structure in which a semiconductor layer is bonded on a supporting substrate, including: a device region formation step of forming a device region including the semiconductor layer on a growth substrate through a lift-off layer; a columnar member formation step of forming a columnar member on the growth substrate; a bonding step of bonding the tops of the semiconductor layer and the columnar member to a supporting substrate; a lift-off step of separating the bottom face of the semiconductor layer from the growth substrate by removing the lift-off layer, and not separating the columnar member from the growth substrate; and a step of separating the columnar member from the supporting substrate. | 10-11-2012 |
20120267803 | ADHESIVE FOR SEMICONDUCTOR BONDING, ADHESIVE FILM FOR SEMICONDUCTOR BONDING, METHOD FOR MOUNTING SEMICONDUCTOR CHIP, AND SEMICONDUCTOR DEVICE - The present invention is aimed to provide an adhesive for bonding a semiconductor which has high transparency and facilitates recognition of a pattern or position indication on the occasion of semiconductor chip bonding. | 10-25-2012 |
20130001809 | Ferroelectric Devices including a Layer having Two or More Stable Configurations - Ferroelectric semiconductor devices are provided by including a ferroelectric layer in the device that is made of a material that is not ferroelectric in bulk. Such layers can be disposed at interfaces to promote ferroelectric switching in a semiconductor device. Switching of conduction in the semiconductor is effected by the polarization of a mechanically bi-stable material. This material is not ferroelectric in bulk but can be considered to be when the thickness is sufficiently reduced down to a few atomic layers. Devices including such ferroelectric layers are suitable for various applications, such as transistors and memory cells (both volatile and non-volatile). | 01-03-2013 |
20130001810 | Method of Manufacturing a Part of a MEMS System - A method of manufacturing a bonded body of a semiconductor substrate and a semiconductor device to be mounted on the semiconductor substrate are provided. The method includes: preparing a first base member and a second base member; imparting liquid repellency for a liquid material to at least a part of a bonding film non-formation region of the first base member to form a liquid repellent region thereon; supplying the liquid material onto the first base member to selectively form a liquid coating on a bonding film formation region of the first base member; drying the liquid coating to obtain a bonding film on the bonding film formation region; and bonding the first base member and the second base member together through the bonding film due to a bonding property developed in a vicinity of a surface of the bonding film to thereby obtain the bonded body. | 01-03-2013 |
20130026663 | METHOD FOR CURING DEFECTS IN A SEMICONDUCTOR LAYER - A method for curing defects associated with the implantation of atomic species into a semiconductor layer transferred onto a receiver substrate, wherein the semiconductor layer is thermally insulated from the receiver substrate by a low thermal conductivity layer having thermal conductivity that is lower than that of the transferred semiconductor layer. The method includes applying a selective electromagnetic irradiation to the semiconductor layer to heat that layer to a temperature lower than its temperature of fusion to cure defects without causing an increase in the temperature of the receiver substrate beyond 500° C. | 01-31-2013 |
20130119566 | Semiconductor Chip and Substrate Transfer/Processing Tunnel -arrangement Extending in a Linear Direction - The invention is related to a semiconductor chip, at-least also accomplished in a semiconductor installation, containing at-least also a long, relatively narrow semiconductor substrate transfer/processing tunnel-arrangement, wherein during its operation at-least also the taking place of successive semiconductor processings of the successive, typically uninterruptedly displacing semiconductor substrate-sections there through and whereby in a device behind its exit by means of dividing these successive semiconductor substrate-sections the accomplishing thereof. | 05-16-2013 |
20130147067 | LOCALLY TAILORING CHEMICAL MECHANICAL POLISHING (CMP) POLISH RATE FOR DIELECTRICS - A method of manufacturing a semiconductor structure includes varying local chemical mechanical polishing (CMP) abrading rates of an insulator film by selectively varying a carbon content of the insulator film. | 06-13-2013 |
20140232018 | SILICON-CONTAINING EUV RESIST UNDERLAYER FILM FORMING COMPOSITION - A resist underlayer film forming composition for EUV lithography, comprising: as a silane, a hydrolyzable silane, a hydrolyzate of the hydrolyzable silane, a hydrolysis condensate of the hydrolyzable silane, or a mixture of any of the hydrolyzable silane, the hydrolyzate, and the hydrolysis condensate, wherein the hydrolyzable silane includes a combination of tetramethoxysilane, an alkyltrimethoxysilane, and an aryltrialkoxysilane, and the aryltrialkoxysilane is represented by formula (1): | 08-21-2014 |
20140239516 | Carbosilane Polymer Compositions for Anti-Reflective Coatings - A silicon polymer material, which has a silicon polymer backbone with chromophore groups attached directly to at least a part of the silicon atoms, the polymer further exhibiting carbosilane bonds. The film forming composition and resulting coating properties can be tailored to suit the specific exposure wavelength and device fabrication and design requirements. By using two different chromophores the refractive index and the absorption co-efficient can be efficiently tuned. By varying the proportion of carbosilane bonds, and a desired Si-content of the anti-reflective coating composition can be obtained. | 08-28-2014 |
20140353853 | METHOD FOR MANUFACTURING A MULTILAYER STRUCTURE ON A SUBSTRATE - The invention relates to a method for manufacturing a multilayer strucute on a first substrate, the method including: using the first substrate made of a first material having a Young's modulus E | 12-04-2014 |
20150115480 | METHOD OF MANUFACTURING HIGH RESISTIVITY SOI WAFERS WITH CHARGE TRAPPING LAYERS BASED ON TERMINATED SI DEPOSITION - A method of preparing a single crystal semiconductor handle wafer in the manufacture of a silicon-on-insulator device is provided. The method comprises forming a multilayer of passivated semiconductors layers on a dielectric layer of a high resistivity single crystal semiconductor handle wafer. The method additionally comprises forming a semiconductor oxide layer on the multilayer of passivated semiconductor layers. The multilayer of passivated semiconductor layers comprise materials suitable for use as charge trapping layers between a high resistivity substrate and a buried oxide layer in a semiconductor on insulator structure. | 04-30-2015 |
20150340241 | SILICON ETCHING LIQUID, SILICON ETCHING METHOD, AND MICROELECTROMECHANICAL ELEMENT - The present invention is able to provide: a silicon etching liquid which anisotropically dissolves single crystal silicon, and which is characterized by containing (1) potassium hydroxide or sodium hydroxide, (2) a hydroxyl amine and (3) a cyclic compound represented by general formula (I), which has a thiourea group and wherein N and N′ are linked; and a silicon etching method which uses this silicon etching liquid. | 11-26-2015 |
20150348821 | EXPANSION METHOD, METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE - An embodiment of the present invention relates to an expansion method comprising: a step (I) of preparing a laminate having a semiconductor wafer in which modified sections have been formed along intended cutting lines, a die bonding film and a dicing tape, a step (IIA) of expanding the dicing tape with the laminate in a cooled state, a step (IIB) of loosening the expanded dicing tape, and a step (IIC) of expanding the dicing tape with the laminate in a cooled state, dividing the semiconductor wafer and the die bonding film into chips along the intended cutting lines, and widening the spaces between the chips. | 12-03-2015 |
20160064272 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - According to an embodiment, a method for manufacturing a semiconductor device includes transferring a continuous second layer, forming a third layer, and removing the second layer. The second layer is transferred onto a first layer. The first layer has a first opening. The second layer covers the first opening to form a first air gap. The third layer is formed on the first layer. The third layer has a second opening. The second opening is positioned on the first air gap. The second layer is removed through the second opening. | 03-03-2016 |
20160122696 | COMPOSITIONS AND METHODS FOR REMOVING CERIA PARTICLES FROM A SURFACE - A removal composition and process for cleaning post-chemical mechanical polishing (CMP) contaminants and ceria particles from a microelectronic device having said particles and contaminants thereon. The removal compositions include at least one surfactant. The composition achieves highly efficacious removal of the ceria particles and CMP contaminant material from the surface of the microelectronic device without compromising the low-k dielectric, silicon nitride, or tungsten-containing materials. | 05-05-2016 |
20190148335 | SYSTEMS ENABLING LOWER-STRESS PROCESSING OF SEMICONDUCTOR DEVICE STRUCTURES AND RELATED STRUCTURES | 05-16-2019 |