Entries |
Document | Title | Date |
20080212255 | Electrostatic chuck and method for manufacturing same - An electrostatic chuck includes: a metal plate with an insulator film formed on a surface thereof by thermal spraying; and a dielectric substrate with an electrode formed on a surface thereof. The metal plate and the dielectric substrate are bonded together via an insulative adhesive interposed therebetween so that the insulator film is opposed to the electrode, and the insulator film has a thickness of 0.6 mm or less. Alternatively, An electrostatic chuck includes: a metal plate with an insulator film formed on a surface thereof by thermal spraying; and a dielectric substrate with an electrode selectively formed on a surface thereof. The metal plate and the dielectric substrate are bonded together via an insulative adhesive interposed therebetween so that the insulator film is opposed to the electrode. The insulative adhesive is interposed also between the insulator film and a portion of the surface of the dielectric substrate where the electrode is not formed, and the insulative adhesive has a thermal conductivity of 1 W/mK or more. | 09-04-2008 |
20080232022 | Method and Device for Electrostatic Fixing of Substrates With Polarizable Molecules - Method for handling a substrate with polarizable molecules including providing a carrier with a first junction electrode and disposing the substrate between the first junction electrode and a second junction electrode. Fixing the substrate on the carrier is achieved by applying a voltage between the first junction electrode and the second junction electrode, so that the polarizable molecules are polarized. After removing the second junction electrode, the substrate remains fixed on the carrier. | 09-25-2008 |
20080239614 | ELECTROSTATIC CHUCK WITH SEPARATED ELECTRODES - Electrostatic clamping devices and methods for reducing contamination to a workpiece coupled to an electrostatic clamping device are disclosed. According to an embodiment an electrostatic clamping device for coupling a workpiece comprises: an embossment portion on a surface of a body to contact the workpiece; and at least two electrodes within the body; wherein the two electrodes are separated by a separation portion below the embossment portion. | 10-02-2008 |
20080266745 | ELECTROSTATIC CHUCK WITH HEATER - An electrostatic chuck with a heater including: a base which is composed of a sintered body containing alumina; an electrode disposed in an upper part of the base: and a resistance heating element embedded in a lower part of the base. The base includes a dielectric layer between the electrode and an upper surface of the base and a supporting member between the electrode and a lower surface of the base. The dielectric layer has a carbon content of not more than 100 ppm, and the supporting member has a carbon content of 0.03 to 0.25 wt %. Moreover, the resistance heating element is formed into a coil and mainly composed of niobium. | 10-30-2008 |
20080266746 | ELECTROSTATIC CHUCK - This invention relates to a suitable electrostatic chuck to hold a substrate during the manufacture of a semiconductor integrated circuit having excellent cooling performance and insulation performance, and a low level of particulate generation, which is comprised of an electrostatic chuck, comprising a metal substrate, a first insulating layer of silicone rubber formed directly or via an adhesive layer on the metal substrate and having a thermal conductivity of 0.5 W/mK or more, an electrically conducting pattern formed directly or via an adhesive layer on this first insulating layer, a second insulating layer of an insulating polyimide film formed directly or via an adhesive layer on this electrically conducting pattern, and a third insulating layer formed directly or via an adhesive layer on this second insulating layer, wherein this third insulating layer is a silicone rubber containing reinforcing silica, this layer not containing any thermally conductive filler having an average particle size of 0.5 μm or more. | 10-30-2008 |
20080266747 | ELECTROSTATIC CHUCK - In an electrostatic chuck for chucking a glass substrate, the electrostatic chuck includes a pair of electrodes embedded in a ceramic material and interlaced with each other, where a volume resistivity of the ceramic material is 1×10 | 10-30-2008 |
20080273284 | Electrostatic chuck - The present invention provides an electrostatic chuck, which has high plasma resistance and high capability of cooling a material to be clamped. As for the basic structure of the electrostatic chuck, an insulating film is formed on a surface of a metal plate by flame spraying, and a dielectric substrate is bonded onto the insulating film by an insulating adhesive layer. The top surface of the dielectric substrate is a surface for mounting a material to be clamped W such as a semiconductor wafer. Electrodes are formed on the lower surface of the dielectric substrate. | 11-06-2008 |
20080278883 | ELECTROSTATIC CHUCK AND METHOD OF MANUFACTURING THE SAME - In a method of manufacturing an electrostatic chuck, the method includes: a step of providing an electrostatic chucking portion including an electrode to which a voltage is applied and a film-like insulating layer covering the electrode; a step of bonding an elastomer layer onto the electrostatic chucking portion; a step of bonding a metal base onto the elastomer layer such that recess portions formed on a surface of the metal base face the elastomer layer. | 11-13-2008 |
20080285202 | IN SITU MONITORING OF WAFER CHARGE DISTRIBUTION IN PLASMA PROCESSING - A processing system and method. The processing system includes a processing tool, an electrostatic chuck (ESC) arranged within the processing tool, and a system that at least one of detects at least one of an ESC bias spike and an ESC current spike of the ESC and determines when an ESC bias voltage is zero or exceeds a threshold value. The method includes at least one of detecting at least one of an ESC bias spike and an ESC current spike of the ESC, and determining when an ESC bias voltage is zero or exceeds a threshold value. The system and method can be used in real time ESC and plasma processing diagnostics to minimize yield loss and wafer scrap. | 11-20-2008 |
20080285203 | SUBSTRATE HOLD APPARATUS AND METHOD FOR JUDGING SUBSTRATE PUSH-UP STATE - A substrate hold apparatus is provided an electrostatic chuck for electrostatically attracting and holding a substrate thereon, a push-up member contactable with a position of vicinity of an edge of the substrate on the electrostatic chuck from below for pushing up the substrate, a drive apparatus for driving at least one of the electrostatic chuck and push-up member to thereby allow the push-up member to push up the substrate, a force sensor for detecting a force applied to the push-up member in an pushing-up operation, and a control unit wherein the control unit is configured to measure the force from the force sensor as a first measurement, output a normal state signal when the measured force in the first measurement is equal to or larger than a lower limit value and is equal to or smaller than a upper limit value. | 11-20-2008 |
20080285204 | ELECTROSTATIC CHUCK STRUCTURE FOR SEMICONDUCTOR MANUFACTURING APPARATUS - An electrostatic chuck structure according to example embodiments of the present invention may include at least one specific region of a conductor having a thickness relatively smaller than those of other regions, at least one specific region of a dielectric having a thickness relatively larger than those of other regions, or at least one specific region of a conductor having a thickness relatively smaller than those of other regions and at least one specific region of a dielectric having a thickness relatively larger than those of other regions. Therefore, etching rate and CD uniformity can be improved during a semiconductor manufacturing process. | 11-20-2008 |
20080297971 | PLASMA PROCESSING SYSTEM ESC HIGH VOLTAGE CONTROL - A plasma processing system is disclosed. The plasma processing system may include an electrostatic chuck (ESC) positioned inside a plasma processing chamber and configured to support a wafer. The ESC may include a positive terminal (+ESC) for providing a first force to the wafer and a negative terminal (−ESC) for providing a second force to the wafer. The plasma processing system may also include a first trans-impedance amplifier (TIA) and a second TIA configured to measure a first set of voltages for calculating a value of a positive load current applied to the positive terminal. The plasma processing system may also include a third TIA and a fourth TIA configured to measure a second set of voltages for calculating a value of a negative load current applied to the negative terminal. | 12-04-2008 |
20090002913 | Polyceramic e-chuck - The present invention discloses an electrostatic chuck for clamping work substrates, said chuck comprising three layers, where the dielectric constant of included non-conductive layers is selected to provide overall lower capacitance to the chuck. In the chuck assembly of the present invention, the top dielectric layer that is in contact with a substrate, such as, for example, a wafer, has a dielectric constant that is preferably greater than about 5, with a resistivity that is preferably greater than about 1E6 ohm.m, whereas the bottom dielectric layer has a dielectric constant that is preferably less than about 5 and a resistivity that is preferably greater than about 1E10 ohm.m. The intermediate layer preferably has a conductive layer where the resistivity is less than about 1 ohm.m. The electrostatic chuck may be bonded to heat sinks coated with anti-arc dielectrics. The heat sink can also be used as an RF electrode. The heat sink may have provisions for coolants and gas channels to feed a cooling gas to the backside of a wafer. The heat sink may have feed thrus to power the segmented electrodes in the electrostatic chuck. The passages for the feed thrus, gas feed holes and lift pins may be lined with ceramics or polymers to prevent any discharge to the heat sink. The electrostatic chuck is for clamping work substrates like Si, GaAs, SiO | 01-01-2009 |
20090021885 | Electrostatic Holding Apparatus, Vacuum Environmental Apparatus Using it and Joining Apparatus - An electrostatic holding apparatus is configured to electrostatically hold objects (W | 01-22-2009 |
20090034147 | Method and apparatus for providing an electrostatic chuck with reduced plasma penetration and arcing - A method and apparatus for providing a fluid distribution element for an electrostatic chuck that reduces plasma formation and arcing within heat transfer fluid passages. One embodiment comprises a plate and a dielectric component, where the dielectric component is inserted into the plate. The plate is adapted to be positioned within a channel to define a plenum, wherein the dielectric component provides at least a portion of a fluid passage coupled to the plenum. A porous dielectric layer, formed upon the dielectric component, provides at least another portion of a fluid passage coupled to the plenum. In other embodiments, the fluid distribution element comprises various arrangements of components to define a fluid passage that does not provide a line-of-sight path from the support surface for a substrate to a plenum. | 02-05-2009 |
20090034148 | Method of making an electrostatic chuck with reduced plasma penetration and arcing - A method of making an electrostatic chuck comprising positioning a plate into a channel in a body to form a plenum and inserting a dielectric component into an opening in the plate, where the dielectric component defines a portion of a passage from the plenum. Thereafter, depositing a dielectric layer covering at least a portion of the body and at least a portion of the plate to form a support surface. The dielectric layer is polished to a specified thickness. In one embodiment, the polishing process forms an opening through the dielectric layer to enable the dielectric component to define a passage between the support surface and the plenum. In another embodiment, at least a portion of the dielectric layer is porous proximate the dielectric component such that the porous dielectric layer and the dielectric component form a passage between the support surface and the plenum. In a further embodiment, a hole is formed through the dielectric layer and the hole in the dielectric layer and the dielectric component form a passage between the support surface and the plenum. | 02-05-2009 |
20090034149 | Method for refurbishing an electrostatic chuck with reduced plasma penetration and arcing - A method for refurbishing at least a portion of an electrostatic chuck. The method comprises removing a first dielectric component from a fluid distribution element of the electrostatic chuck and replacing the first dielectric component with a second dielectric component. | 02-05-2009 |
20090034150 | SUBSTRATE HOLDING SYSTEM AND EXPOSURE APPARATUS USING THE SAME - A substrate holding system including a substrate attracting device, an exhausting device, and a control device to operate the exhausting device so that a pressure around the substrate and a pressure at an interval between the substrate and the substrate attracting device are lowered to a first pressure and that only the pressure at the interval is subsequently lowered to a second pressure, which is lower than the first pressure. | 02-05-2009 |
20090034151 | Pressure Assisted Wafer Holding Apparatus and Control Method - An electrostatic wafer holding apparatus includes an electrostatic chucking pedestal and a bi-directional backside conduit in fluid communication with a backside of the chucking pedestal. The bi-directional backside conduit is in fluid communication with a backside carrier gas supply line, and is further in fluid communication with a vacuum supply line. | 02-05-2009 |
20090040681 | Electrode Sheet for Electrostatic Chuck, and Electrostatic Chuck - An electrostatic chuck electrode sheet which allows the difference in capacitance between electrodes due to the presence or absence of a substrate to be increased to a level which can be accurately detected using a known substrate detection device, and allows an electrostatic chuck to exhibit an excellent attraction force, and an electrostatic chuck using the electrode sheet, are disclosed. The electrode sheet has a layered structure in which a first insulating layer, a first electrode layer, an inter-electrode insulating layer, a second electrode layer, and a second insulating layer are stacked and attracts a substrate on the first insulating layer, the first electrode layer having a plurality of openings in a specific planar area, and the second electrode layer having opening equivalent portions provided at positions at which the openings in the first electrode layer are projected onto the second electrode layer in a depth direction of the electrode sheet and having almost the same area as the projected openings, and connection portions that connect the opening equivalent portions. The electrostatic chuck is formed using the electrode sheet. | 02-12-2009 |
20090040682 | Method of de-chucking wafer using direct voltage and alternating voltage, and apparatus for fabricating semiconductor device using the same - Example embodiments provide a method of de-chucking a wafer by alternating between using a direct voltage and an alternating voltage, and an apparatus for fabricating a semiconductor device using the same. The method of de-chucking a wafer comprises interrupting a chucking voltage applied to an electrostatic chuck, applying a first de-chucking voltage to the electrostatic chuck, and applying a second de-chucking voltage to the electrostatic chuck. | 02-12-2009 |
20090059461 | ELECTROSTATIC CHUCK - An electrostatic chuck of the invention includes a base portion; a heat insulating layer bonded onto the base portion; and a chuck function portion bonded on the heat insulating layer and composed by providing a heater electrode and an electrostatic chuck (ESC) electrode in a ceramic substrate portion. Adhesive layers are respectively provided on the both surface sides of the heat insulating layer. In the case where the base portion and the chuck function portion are bonded together with high adhesion strength, openings are formed in the heat insulating layer and are filled with the adhesive layers. | 03-05-2009 |
20090059462 | Electrostatic chuck device - An electrostatic chuck device provided with a dielectric plate with a surface embossed to give it a plurality of projections, an electrode, and an external power source, wherein substrate supporting surfaces of the plurality of projections are covered by conductor wiring and the conductor wiring electrically connects the substrate supporting surfaces of the plurality of projections. At the time of substrate processing, when the embossed projections contact the back of the substrate, the back of the substrate and the conductor wiring is made the same in potential due to the migration of the charges, the generation of force between the back of the substrate and the conductor wiring being in contact with the same is prevented, and a rubbing state between the two is prevented. Due to this, the electrostatic chuck device reduces the generation of particles, easily and stably removes and conveys substrates, and realizes a high yield and system operating rate. | 03-05-2009 |
20090067114 | Non Contact Substrate Chuck - A chuck for releasably retaining a substrate, where the chuck has a body with a substrate receiving surface disposed in an X-Y coordinate plane and adapted to receive the substrate. The body has gas pressure delivery channels and gas vacuum drawing channels, where the gas pressure delivery channels and gas vacuum drawing channels are mutually exclusive within the body. The substrate receiving surface has gas pressure delivery portions in communication with the gas pressure delivery channels, for delivering a gas pressure against the substrate while the substrate is retained by the chuck, and thereby keeping the substrate from contacting the substrate receiving surface. The substrate receiving surface also has gas vacuum drawing portions in communication with the gas vacuum drawing channels, for drawing a gas vacuum against the substrate while the substrate is retained by the chuck, and thereby retaining the substrate proximate the substrate receiving surface. Retaining means retain the substrate in X-Y directions from sliding off of the substrate receiving surface. | 03-12-2009 |
20090080136 | ELECTROSTATIC CHUCK MEMBER - An electrostatic chuck member comprises an electrode layer and an electric insulating layer, wherein a spray coating layer of an oxide of a Group 3A element in the Periodic Table is formed as an outermost layer of the member and a surface of the spray coating layer is rendered into a densified re-melting layer having an average surface roughness (Ra) Of 0.8-3.0 μm. | 03-26-2009 |
20090086400 | ELECTROSTATIC CHUCK APPARATUS - An electrostatic chuck for holding a substrate has a circular dielectric member having a top surface configured to support the substrate, the top surface having a plurality of mesas consisting of n subsets, wherein mesas of each subset are distributed along one of a plurality of concentric bolt circles of increasing radii, and wherein all of the concentric bolt circles center about the center of the circular dielectric member. | 04-02-2009 |
20090086401 | ELECTROSTATIC CHUCK APPARATUS - An electrostatic chuck includes an angled conduit, or an angled laser drilled passage, through which a heat transfer gas is provided. A segment of the angled conduit and/or the angled laser drilled passage extends along an axis different from an axis of the electric field generated to hold a substrate to the chuck, thereby minimizing plasma arcing and backside gas ionization. A first plug may be inserted into the conduit, wherein a segment of a first exterior channel thereof extends along an axis different from an axis of the electric field. A first and second plug may be inserted into a ceramic sleeve which extends through at least one of the dielectric member and the electrode. Finally, the surface of the dielectric member may comprise embossments arranged at radial distances from the center of the dielectric member so as to improve heat transfer and gas distribution. | 04-02-2009 |
20090097184 | ELECTROSTATIC CHUCK ASSEMBLY - The present invention generally comprises an electrostatic chuck base, an electrostatic chuck assembly, and a puck for the electrostatic chuck assembly. Precisely etching a substrate within a plasma chamber may be a challenge because the plasma within the chamber may cause the temperature across the substrate to be non-uniform. A temperature gradient may exist across the substrate such that the edge of the substrate is at a different temperature compared to the center of the substrate. When the temperature of the substrate is not uniform, features may not be uniformly etched into the various layers of the structure disposed above the substrate. A dual zone electrostatic chuck assembly may compensate for temperature gradients across a substrate surface. | 04-16-2009 |
20090097185 | Time-based wafer de-chucking from an electrostatic chuck having separate RF bias and DC chucking electrodes - An electrostatic chuck in a reactor chamber has a cathode electrode insulated from ground, a chucking electrode insulated from the cathode electrode and a dielectric layer overlying the chucking electrode that provides a workpiece support surface. A D.C. chucking voltage supply is coupled to the chucking electrode. An RF power generator is coupled to the cathode electrode. A voltage sensing apparatus is coupled to the chucking electrode and to the cathode electrode to monitor the voltage difference between them during discharge after removal of RF and DC power at the conclusion of processing. The reactor includes a controller programmed to raise the lift pins during electrode discharge as soon as the voltage sensing apparatus detects equal voltages simultaneously on the chucking and cathode electrodes. | 04-16-2009 |
20090103232 | Substrate Holding System and Exposure Apparatus Using the Same - A substrate holding system for holding a substrate based on vacuum attraction and electrostatic attraction including a rim configured to support the substrate, a protrusion for the electrostatic attraction, configured to support the substrate inside the rim, and a protrusion for the vacuum attraction, configured to support the substrate inside the rim. A substrate supporting surface area of the protrusion of the electrostatic attraction is larger than a substrate supporting surface area of the protrusion for the vacuum attraction. | 04-23-2009 |
20090109595 | METHOD AND SYSTEM FOR PERFORMING ELECTROSTATIC CHUCK CLAMPING IN TRACK LITHOGRAPHY TOOLS - A method of clamping/declamping a semiconductor wafer on an electrostatic chuck in ambient air includes disposing the semiconductor wafer at a predetermined distance above a dielectric surface of the electrostatic chuck having one or more electrodes and applying a first voltage greater than a predetermined threshold to the one or more electrodes of the electrostatic chuck for a first time period. The method includes reducing the first voltage to a second voltage substantially equal to a self bias potential of the semiconductor wafer after the first time period. The method includes maintaining the second voltage for a second time period and adjusting the second voltage to a third voltage characterized by a polarity opposite to that of the first voltage and a magnitude smaller than the predetermined threshold. The method includes reducing the third voltage to a fourth voltage substantially equal to the second voltage after a third time period. | 04-30-2009 |
20090122458 | EMBOSSED ELECTROSTATIC CHUCK - An electrostatic chuck includes a layer having a plurality of protrusions to support a workpiece, wherein at least a portion of the layer has a first plurality of the plurality of protrusions. The first plurality of protrusions is spaced to geometrically form a pattern of hexagons. The first plurality of protrusions may be spaced an equal distance from adjacent protrusions and the equal distance may be about 4.0 millimeters from a center of one protrusion to a center of another protrusion. The present disclosure reduces peak mechanical stress levels conventionally present along an edge of each protrusion. Reducing such mechanical stress levels helps reduce backside damage to a supported workpiece, which in turn can reduce the generation of unwanted particles caused by such damage. | 05-14-2009 |
20090122459 | Electrostatic chuck device - An electrostatic chuck device provided with a dielectric plate with a surface embossed to give it a plurality of projections, an electrode, and an external power source, wherein substrate supporting surfaces of the plurality of projections are covered by conductor wiring and the conductor wiring electrically connects the substrate supporting surfaces of the plurality of projections. At the time of substrate processing, when the embossed projections contact the back of the substrate, the back of the substrate and the conductor wiring is made the same in potential due to the migration of the charges, the generation of force between the back of the substrate and the conductor wiring being in contact with the same is prevented, and a rubbing state between the two is prevented. Due to this, the electrostatic chuck device reduces the generation of particles, easily and stably removes and conveys substrates, and realizes a high yield and system operating rate. | 05-14-2009 |
20090135540 | Electrostatic holding apparatus and electrostatic tweezers using the same - To provide an electrostatic holding apparatus which is capable of performing handling for a long period of time even when a direct current high-voltage power supply is separated from the electrostatic holding apparatus. The electrostatic holding apparatus holds a workpiece to be held with an electrostatic force by applying prescribed voltages from the direct current high-voltage power supply to a plurality of electrode groups having the electrode groups as a holding section. The electrostatic holding apparatus is provided with an electrode potential drop modifying apparatus which modifies drops of potentials applied to the electrode groups by being separated from the direct current high-voltage power supply by switches. The electrode potential drop modifying apparatus includes, for instance, capacitors. | 05-28-2009 |
20090141418 | ELECTROSTATIC CHUCK AND APPARATUS HAVING THE SAME - An electrostatic chuck and an apparatus having the electrostatic chuck are provided. The electrostatic chuck may attract a substrate during a substrate assembling process for manufacturing a flat display panel. An elastic layer made of an elastic material may be provided in a base part of the electrostatic chuck, thus preventing non-uniform stress from being distributed on the substrate due to external force, therefore maintaining the flatness of the substrate and improving the quality of assembled substrates. The electrostatic chuck may include an electrostatic force generating part provided on an upper surface of the base part, the force generating part including an insulating layer, an electrode layer, a dielectric layer. The base part may be provided with the elastic layer made of the elastic material having elastic restoring force. | 06-04-2009 |
20090161285 | ELECTROSTATIC CHUCK AND METHOD OF FORMING - An electrostatic chuck includes an insulating layer, a conductive layer overlying the insulating layer, a dielectric layer overlying the conductive layer, the dielectric layer having pores forming interconnected porosity, and a cured polymer infiltrant residing in the pores of the dielectric layer. | 06-25-2009 |
20090161286 | ELECTROSTATIC CHUCK SUPPORT ASSEMBLY - A method of tuning the thermal conductivity of an electrostatic chuck (ESC) support assembly comprises measuring the temperature at a plurality of sites on a support assembly surface in which each site is associated with a given cell, determining from the measurements any fractional reduction in area suggested for each cell, and removing material from the support assembly surface within each cell in accordance with the suggested fractional reduction in order to decrease thermal conductivity in that cell. The material removal can result in an improvement to the equilibrium temperature uniformity of the electrostatic chuck support assembly at the chuck surface of an electrostatic chuck bonded to the support assembly surface, or can result in an equilibrium temperature profile of the ESC support assembly which approaches or achieves a target equilibrium temperature profile. Thermal conductivity tuning can thus take place by a method comprising defining a cell structure, determining the target areal density of each cell and removing a fractional area of material to achieve the target areal density for that cell. Material removal can be effected by drilling, routing, laser machining or grit blast machining on an X-Y table. | 06-25-2009 |
20090168291 | ELECTROSTATIC CHUCK AND SUBSTRATE TEMPERATURE ADJUSTING-FIXING DEVICE - There is provided an electrostatic chuck for placing an adsorption object or a base body having an electrostatic electrode embedded therein and generating a coulombic force between the adsorption object and the electrostatic electrode by applying a voltage to the electrostatic electrode so as to hold the adsorption object in an adsorption state, wherein the base body includes a upper surface of the base body opposed to the adsorption object and a protrusion portion provided in the upper surface of the base body so as to come into contact with the adsorption object, and wherein the protrusion portion is provided in a region except for an outer edge portion of the upper surface of the base body, and the outer edge portion is substantially formed in the same plane as that of the upper surface of the base body. | 07-02-2009 |
20090168292 | ELECTROSTATIC CHUCK AND SUBSTRATE TEMPERATURE ADJUSTING-FIXING DEVICE - There is provided an electrostatic chuck for adsorbing and holding an adsorption object placed on an upper surface of a base body having an electrostatic electrode embedded therein and for filling inert gas of which a pressure is adjusted into a space formed between the upper surface of the base body and a lower surface of the adsorption object, wherein the base body includes a gas discharge portion embedded therein so as to discharge the inert gas to the space and a gas path embedded therein so as to introduce the inert gas into the gas discharge portion while communicating with the gas discharge portion. | 07-02-2009 |
20090174983 | ELECTROSTATIC CHUCK ASSEMBLY WITH DIELECTRIC MATERIAL AND/OR CAVITY HAVING VARYING THICKNESS, PROFILE AND/OR SHAPE, METHOD OF USE AND APPARATUS INCORPORATING SAME - An electrostatic chuck assembly having a dielectric material and/or having a cavity with varying thickness, profile and/or shape is disclosed. The electrostatic chuck assembly includes a conductive support and an electrostatic chuck ceramic layer. A dielectric layer or insert is located between the conductive support and an electrostatic chuck ceramic layer. A cavity is located in a seating surface of the electrostatic chuck ceramic layer. An embedded pole pattern can be optionally incorporated in the electrostatic chuck assembly. Methods of manufacturing the electrostatic chuck assembly are disclosed as are methods to improve the uniformity of a flux field above a workpiece during a plasma processing process. | 07-09-2009 |
20090201622 | Detachable electrostatic chuck for supporting a substrate in a process chamber - A substrate support has an electrostatic chuck comprising an electrostatic puck with a dielectric covering an electrode capable of being charged to energize a process gas. The chuck has a frontside surface to receive a substrate and a base plate having an annular flange. A spring loaded heat transfer plate contacts the base plate, and has a fluid channel comprising first and second spiral channels. A pedestal is below the heat transfer plate. | 08-13-2009 |
20090273877 | Electrostatic Chuck - The present invention provides an electrostatic chuck in which the surface can be kept smooth after being exposed to plasma, so as to protect a material to be clamped such as a silicon wafer from being contaminated with particles, and which is excellent in clamping and releasing a material to be clamped and easy to manufacture by low-temperature firing. The electrostatic chuck includes a dielectric material in which alumina is 99.4 wt % or more, and titanium oxide is more than 0.2 wt % and equal to or less than 0.6 wt %, wherein the electrostatic chuck's volume resistivity is 10 | 11-05-2009 |
20090273878 | GAS BEARING ELECTROSTATIC CHUCK - An electrostatic clamp is provided having a clamping plate, wherein the clamping plate has a central region and an annulus region. A plurality of gas supply orifices are defined in the central region of the clamping plate, wherein the plurality of gas supply orifices are in fluid communication with a pressurized gas supply, and wherein the pressurized gas supply is configured to provide a cushion of gas between the clamping surface and the workpiece in the central region of the clamping plate via the plurality of gas supply orifices. One or more gas return orifices defined in one or more of the central region and annulus region of the clamping plate, wherein the one or more gas return orifices are in fluid communication with a vacuum source, therein generally defining an exhaust path for the cushion of gas. A seal is disposed in the annulus region of the clamping plate, wherein the seal is configured to generally prevent a leakage of the cushion of gas from the central region to an environment external to the annulus region. One or more electrodes are further electrically connected to a first voltage potential to provide a first clamping force. | 11-05-2009 |
20090273879 | Electrostatic Attraction Apparatus for Glass Substrate and Method of Attracting and Releasing the Same - An object is providing an electrostatic attraction apparatus and an attracting/releasing method capable of reliably attracting and quickly releasing a glass substrate. An attraction force for attracting a glass substrate is obtained according to the physical properties of the glass substrate. In addition to obtaining an attraction voltage (V | 11-05-2009 |
20090284893 | Electrostatic chuck - An electrostatic chuck of the invention includes a ceramic dielectric made of a sintered body containing alumina and titanium oxide, with maximum particle size of segregation bodies of titanium compounds being smaller than average particle size of alumina, the ceramic dielectric having a volume resistivity of 10 | 11-19-2009 |
20090284894 | Electrostatic chuck - In accordance with an embodiment of the invention, there is provided an electrostatic chuck comprising an electrode, and a surface layer activated by a voltage in the electrode to form an electric charge to electrostatically clamp a substrate to the electrostatic chuck. The surface layer includes a plurality of protrusions extending to a height above portions of the surface layer surrounding the protrusions to support the substrate upon the protrusions during electrostatic clamping of the substrate. The protrusions are substantially equally spaced across the surface layer as measured by a center to center distance between pairs of neighboring protrusions. | 11-19-2009 |
20090310274 | ELECTROSTATIC CHUCK AND SUBSTRATE TEMPERATURE CONTROL FIXING APPARATUS - There is provided an apparatus including: an electrostatic chuck for holding an object; and a base plate which supports the electrostatic chuck and controls a temperature of the electrostatic chuck. The electrostatic chuck is fixed onto the base plate via an adhesive layer. The electrostatic chuck includes: a base; an electrostatic electrode built in the base; and a mounting portion containing a dielectric material and detachably mounted on the base. The object is mounted on the mounting portion. | 12-17-2009 |
20100002354 | ELECTROSTATIC CHUCK DEVICE - An electrostatic chuck device which enables to perform a plasma process having high in-plane uniformity to a plane-like sample by improving the in-plane uniformity of the electric field intensity in a plasma when applied to a plasma processing apparatus. Specifically disclosed is an electrostatic chuck device ( | 01-07-2010 |
20100002355 | WAFER SUPPORT DEVICE AND COMPONENT USED FOR THE SAME - A wafer support device | 01-07-2010 |
20100008013 | METHOD AND APPARATUS FOR SAFELY DECHUCKING WAFERS - A wafer stage installed in a process chamber for safely dechucking a wafer is provided. In one embodiment, the wafer stage comprises: a chuck support for supporting a chuck; a chuck mounted on the chuck support for receiving and attaching a wafer thereto; a support lift means for supporting the wafer; a driving means coupled to the support lift means for gradually raising the support lift means to contact the wafer in response to a variable quantity; a sensor attached to the driving means for detecting a change in the variable quantity; and a controller for controlling the variable quantity to the driving means when a predetermined variable quantity is detected in comparison to the change in the variable quantity for a predetermined time. | 01-14-2010 |
20100008014 | METHOD AND APPARATUS FOR SUCURELY DECHUCKING WAFERS - A wafer stage installed in a process chamber for safely dechucking a wafer is provided. In one embodiment, the wafer stage comprises: a chuck support for supporting a chuck; a chuck mounted on the chuck support for receiving and attaching a wafer thereto; a support lift means for supporting the wafer; a driving means coupled to the support lift means for gradually raising the support lift means to contact the wafer in response to a variable quantity; a controller for receiving the variable quantity; and a regulating means coupled to the driving means and to the controller, the regulating means for controlling the variable quantity going to the driving means when a predetermined variable quantity is detected. | 01-14-2010 |
20100008015 | CAPACITIVELY-COUPLED ELECTROSTATIC (CCE) PROBE ARRANGEMENT FOR DETECTING DECHUCKING IN A PLASMA PROCESSING CHAMBER AND METHODS THEREOF - A method for identifying a signal perturbation characteristic of a dechucking event within a processing chamber of a plasma processing system is provided. The method includes executing a dechucking step within the processing chamber to remove a substrate from a lower electrode, wherein the dechucking step includes generating plasma capable of providing a current to neutralize an electrostatic charge on the substrate. The method also includes employing a probe head to collect a set of characteristic parameter measurements during the dechucking step. The probe head is on a surface of the processing chamber, wherein the surface is within close proximity to a substrate surface. The method further includes comparing the set of characteristic parameter measurements against a pre-defined range. If the set of characteristic parameter measurements is within the pre-defined range, the electrostatic charge is removed from the substrate and the signal perturbation characteristic of the dechucking event is detected. | 01-14-2010 |
20100008016 | ELECTROSTATIC CHUCK ASSEMBLY WITH CAPACITIVE SENSE FEATURE, AND RELATED OPERATING METHOD - A semiconductor workpiece processing system for treating a workpiece, such as a semiconductor wafer, is provided. A related operating control method is also provided. The system includes an electrostatic chuck configured to receive a workpiece, and a clamping voltage power supply coupled to the electrostatic chuck. The electrostatic chuck has a clamping electrode assembly, and the clamping voltage power supply is coupled to the clamping electrode assembly. The clamping voltage power supply includes a direct current (DC) voltage generator configured to generate a DC clamping voltage for the clamping electrode assembly, an alternating current (AC) voltage generator configured to generate an AC excitation signal for the clamping electrode assembly, and a processing architecture coupled to the clamping electrode assembly. The processing architecture is configured to analyze attributes of a workpiece presence signal obtained in response to the AC excitation signal, and, based on the attributes, verify proper/improper positioning of the workpiece relative to the electrostatic chuck. | 01-14-2010 |
20100014208 | SUBSTRATE HOLDER - A substrate holder which has an electrostatic chuck on a substrate holding side of a holder main body and electrostatically adsorbs a substrate includes: a heating unit which is built in the electrostatic chuck and heats the substrate; a circulation medium distribution path which is formed inside the holder main body and connected to a circulation medium supplying unit which circulates and supplies a circulation medium; a heat transference varying unit which is formed by sealing a heat transfer gas in a gap between the holder main body and the electrostatic chuck and connected to a heat transfer gas supply system which can control a sealing pressure; and a gas sealing unit which is formed by sealing a heat transfer gas in a gap between the electrostatic chuck and the substrate and connected to the heating transfer gas supply system. | 01-21-2010 |
20100020463 | HIGH TEMPERATURE ELECTROSTATIC CHUCK AND METHOD OF USING - An electrostatic chuck configured for high temperature reduced-pressure processing is described. The electrostatic chuck comprises a chuck body having an electrostatic clamp electrode and an optional heating element, and a heat sink body having a heat transfer surface spaced in close relationship with an inner surface of the chuck body, wherein the heat sink body is configured to remove heat from the chuck body due to the close proximity of the inner surface and the heat transfer surface. The electrostatic chuck further comprises a table assembly configured to support the chuck body and the heat sink body, and an expansion joint disposed between the chuck body and the table assembly, and configured to sealably join the chuck body to the table assembly while accommodating for differential thermal expansion of the chuck body and the table assembly. | 01-28-2010 |
20100027187 | Electroadhesion - Described herein is electroadhesion technology that permits controllable adherence between two objects. Electroadhesion uses electrostatic forces of attraction produced by an electrostatic adhesion voltage, which is applied using electrodes in an electroadhesive device. The electrostatic adhesion voltage produces an electric field and electrostatic adherence forces. When the electroadhesive device and electrodes are positioned near a surface of an object such as a vertical wall, the electrostatic adherence forces hold the electroadhesive device in position relative to the surface and object. This can be used to increase traction or maintain the position of the electroadhesive device relative to a surface. Electric control of the electrostatic adhesion voltage permits the adhesion to be controllably and readily turned on and off. | 02-04-2010 |
20100027188 | Replaceable Electrostatic Chuck Sidewall Shield - A replaceable electrostatic chuck sidewall shield is provided. The replaceable electrostatic chuck sidewall shield fills or partially fills an indentation located between a base member and a top member of an electrostatic chuck, such that the replaceable electrostatic chuck sidewall shield may protect an epoxy in the indentation or may replace the epoxy within the indentation. The replaceable electrostatic chuck sidewall shield may be fully contained with the indentation. The replaceable electrostatic chuck sidewall shield may also cover an epoxy in the indentation such that the replaceable electrostatic chuck sidewall shield protrudes beyond the indentation. In an alternate embodiment, the replaceable electrostatic chuck sidewall shield substantially covers the area in which a conductive pole is embedded in a bipolar electrostatic chuck. | 02-04-2010 |
20100039747 | ELECTROSTATIC CHUCK ASSEMBLY - Embodiments of the present invention provide a cost effective electrostatic chuck assembly capable of operating over a wide temperature range in an ultra-high vacuum environment while minimizing thermo-mechanical stresses within the electrostatic chuck assembly. In one embodiment, the electrostatic chuck assembly includes a dielectric body having chucking electrodes which comprise a metal matrix composite material with a coefficient of thermal expansion (CTE) that is matched to the CTE of the dielectric body. | 02-18-2010 |
20100046134 | Electrostatic chuck device - An electrostatic chuck device provided with a dielectric plate with a surface embossed to give it a plurality of projections, an electrode, and an external power source, wherein substrate supporting surfaces of the plurality of projections are covered by conductor wiring and the conductor wiring electrically connects the substrate supporting surfaces of the plurality of projections. At the time of substrate processing, when the embossed projections contact the back of the substrate, the back of the substrate and the conductor wiring is made the same in potential due to the migration of the charges, the generation of force between the back of the substrate and the conductor wiring being in contact with the same is prevented, and a rubbing state between the two is prevented. Due to this, the electrostatic chuck device reduces the generation of particles, easily and stably removes and conveys substrates, and realizes a high yield and system operating rate. | 02-25-2010 |
20100053841 | WAFER PROCESSING APPARATUS HAVING A TUNABLE ELECTRICAL RESISTIVITY - An article with an etch resistant coating is disclosed. The article is a heating element, wafer carrier, or electrostatic chuck. The article has a base substrate made of a ceramic or other material, and further has one or more electrodes for resistance heating or electromagnetic chucking or both. The eth resistant coating has a plurality of regions made from materials having different electrical volume resistivities, such that the overall coating has a bulk resistivity that can be tailored by varying the relative size of each region. | 03-04-2010 |
20100061032 | ELECTROSTATIC CHUCK ELECTRICAL BALANCING CIRCUIT REPAIR - The present invention includes methods and apparatus for repairing an electrical connection between bipolar electrodes contained within an electrostatic chuck and a conductive mask disposed atop the electrostatic chuck, known as a balancing circuit. Embodiments of the invention are particularly useful after removal of an electrostatic chuck for refurbishment. | 03-11-2010 |
20100061033 | ELECTROSTATIC CHUCK POWER SUPPLY - A power supply is provided for an electrostatic chuck. A signal generating circuit of the power supply is configured to generate a square wave signal. An amplifying circuit is electrically connected to the square wave circuit and configured to amplify the square wave signal. A transformer has a primary and a secondary winding. The primary winding is electrically connected to the amplifying circuit and the secondary winding is configured to be electrically connected to the electrostatic chuck. The secondary winding produces a signal for the electrostatic chuck. A voltage divider circuit is electrically connected to the secondary winding and to the amplifying circuit. The voltage divider circuit is configured to reduce the voltage of the signal for the electrostatic chuck and feed back the reduced voltage signal to the amplifying circuit. The signal from the secondary winding is a trapezoidal waveform with approximately flat tops and minimal dead-time between phase reversals. | 03-11-2010 |
20100067165 | Electrostatic chuck and method for manufacturing same - An electrostatic chuck includes a ceramic member containing yttrium oxide as a main component, containing cerium element and obtained by firing under a nonoxidizing atmosphere. The electrostatic chuck that has high corrosion resistant characteristics and includes a ceramic member having a low volume resistivity with a strong attracting force that utilize the Johnsen-Rahbeck force can be obtained. | 03-18-2010 |
20100085679 | METHOD FOR USING AN RC CIRCUIT TO MODEL TRAPPED CHARGE IN AN ELECTROSTATIC CHUCK - A method for simulating the effect of trapped charge in an electrostatic chuck on the chuck performance comprises creating a trapped-charge electrical model having a trapped-charge capacitor and a gap-trapped resistor, and coupling the model to a plurality of voltage sources. The trapped-charge capacitor and the gap-trapped resistor may be varied in relation to a plurality of electrostatic chuck physical parameters. | 04-08-2010 |
20100097738 | ELECTROSTATIC CHUCK AND SUBSTRATE BONDING DEVICE USING THE SAME - An electrostatic chuck and a substrate bonding device equipped with the electrostatic chuck are disclosed. The electrostatic chuck in accordance with an embodiment of the present invention includes: an elastic holder, in which a center portion of one surface of the elastic holder is formed in a convex shape; an electrode, which is coupled to the elastic holder such that the elastic holder is electrically charged; and a holding unit, which holds the other surface of the elastic holder. The electrostatic chuck in accordance with an embodiment of the present invention can prevent a defect caused by a void formed between substrates while bonding the substrates. | 04-22-2010 |
20100103583 | WAFER GROUNDING METHODOLOGY - An apparatus for increasing electric conductivity to a wafer substrate, when exposed to electron beam irradiation, is disclosed. More specifically, a methodology to breakdown the insulating layer on wafer backside is provided to significantly reduce the damage on the wafer backside while proceeding with the grounding process. | 04-29-2010 |
20100103584 | ELECTROSTATIC CHUCKING APPARATUS AND METHOD FOR MANUFACTURING THE SAME - An electrostatic chucking apparatus and a method for manufacturing the same is disclosed, which is capable of enabling the increase of lifetime of an electrostatic chuck and realizing a uniform temperature gradient in an entire substrate by preventing an insulating material from being etched, the electrostatic chucking apparatus comprising a base member; and an electrostatic chuck, loaded onto the base member, for chucking a substrate by an electrostatic force, wherein the electrostatic chuck comprises an insulating member formed on the base member and provided with a plurality of first insulating sheets of aluminum nitride; a heater for heating the substrate, the heater positioned among the plurality of first insulating sheets; a direct current electrode formed on at least one first insulating sheet provided above the heater among the plurality of first insulating sheets, the DC electrode electrically connected with a direct current power source; and an insulator etch stopping layer, formed of aluminum oxide on an entire surface of the insulating member, for preventing the insulating member from being etched. | 04-29-2010 |
20100110603 | WAFER GROUNDING METHOD FOR ELECTROSTATIC CLAMPS - An electrostatic chuck and method for clamping and de-clamping a workpiece is provided. The ESC comprises a clamping plate having a clamping surface, and one or more electrodes. An electric potential applied to the one or more electrodes selectively clamps the workpiece to the clamping surface. An arc pin operably coupled to the clamping plate and a power source provides an arc for penetrating an insulating layer of the workpiece. The arc pin is selectively connected to an electrical ground, wherein upon removal of the insulative layer of the workpiece, the arc pin provides an electrical ground connection to the workpiece. | 05-06-2010 |
20100110604 | ELECTROSTATIC CHUCK GROUND PUNCH - An electrostatic chuck and method for clamping a workpiece is provided. The ESC comprises a clamping plate having a clamping surface, and one or more electrodes. An electric potential applied to the one or more electrodes selectively clamps the workpiece to the clamping surface. A punch is operably coupled to the clamping plate and an electrical ground, wherein the punch comprises a trigger mechanism and a punch tip. The punch tip translates between extended and retracted positions, wherein a point of the punch tip is proud of the clamping surface when the punch tip is in the extended position. The punch tip is configured to translate toward the clamping surface upon clamping the workpiece to the clamping plate. Upon reaching the retracted position, the trigger mechanism imparts an impact force to the punch tip, forcing the punch tip into the workpiece and providing an electrical ground connection to the workpiece. | 05-06-2010 |
20100110605 | ELECTROSTATIC CHUCK ASSEMBLY FOR PLASMA REACTOR - Provided is an electrostatic chuck assembly for a plasma reactor. The assembly includes an electrostatic chuck, an electrostatic chuck cover ring, and a cathode assembly cover ring. The electrostatic chuck includes a body part and a protrusion part. The body part has a disk shape of a first diameter. The protrusion part is formed integrally with the body part and protrudes from the body part, and has a disk shape of a second diameter less than the first diameter. The electrostatic chuck cover ring is disposed to surround an outer circumference of the protrusion part. The cathode assembly cover ring is disposed at an upper part of the cathode assembly to surround an outer circumference of the electrostatic chuck cover ring and an outer circumference of the body part. | 05-06-2010 |
20100118464 | ELECTROSTATIC CHUCK AND SUBSTRATE PROCESSING APPARATUS HAVING SAME - In an electrostatic chuck provided inside a processing chamber of a substrate processing apparatus and including a high voltage electrode plate for electrostatically attracting a target substrate, a heater includes a plate-shaped resistor and two electrode plates respectively brought into surface-contact with a front surface and a rear surface of the resistor, and one of the two electrode plates of the heater serves as the high voltage electrode plate for electrostatically attracting the target substrate. | 05-13-2010 |
20100128409 | ALUMINUM NITRIDE SINTERED PRODUCT, METHOD FOR PRODUCING THE SAME, AND ELECTROSTATIC CHUCK INCLUDING THE SAME - A method for producing an aluminum nitride sintered product according to the present invention includes the steps of (a) preparing a powder mixture that contains AlN, 2 to 10 parts by weight of Eu | 05-27-2010 |
20100142113 | DE-CLAMPING WAFERS FROM AN ELECTROSTATIC CHUCK - One embodiment of the present invention relates to a method for declamping a semiconductor wafer that is electrically adhered to a surface of an electrostatic chuck by a clamping voltage. In this method, the clamping voltage is deactivated. For a time following the deactivation, a first region of the wafer is lifted an first distance from the surface of the electrostatic chuck while a second region of the wafer remains adhered to the surface of the electrostatic chuck. A predetermined condition is monitored during the time. The second region is lifted from the surface of the electrostatic chuck when the predetermined condition is met. | 06-10-2010 |
20100142114 | ELECTROSTATIC CHUCK WITH COMPLIANT COAT - The present invention is directed to an electrostatic chuck (ESC) with a compliant layer formed from TT-Kote® and a method of forming a clamping plate for an ESC. The ESC comprises a compliant layer having a low friction surface for reducing or eliminating particulates generated from thermal expansion. The method comprises forming a clamping member for a substrate comprising a ceramic material and a ceramic surface, and coating the ceramic surface with a compliant layer comprising an organic silicide or TT-Kote®. | 06-10-2010 |
20100149720 | BIPOLAR ELECTROSTATIC CHUCK - A bipolar electrostatic chuck which has excellent dielectric breakdown strength and provides excellent attracting performance. The bipolar electrostatic chuck eliminates difficulty in dismounting a sample from a sample attracting plane as much as possible after application of a voltage to electrodes is finished. The bipolar electrostatic chuck is provided with a first electrode and a second electrode in an insulator and permits a surface of the insulator to be the sample attracting plane. The insulator has the first electrode, an interelectrode insulating layer and the second electrode in this order from the sample attracting plane in the depth direction. The second electrode has a region not overlapping with the first electrode in a normal line direction of the sample attracting plane. | 06-17-2010 |
20100177454 | Electrostatic chuck with dielectric inserts - An electrostatic chuck with dielectric inserts provides conveyance of cooling gas while eliminating arc path to a workpiece surface. The electrostatic chuck includes the workpiece surface configured to support a substrate such as a semiconductor wafer, a plenum configured to carry a cooling gas, and a plurality of dielectric inserts configured to provide communication of the cooling gas between the plenum and the workpiece surface. The dielectric inserts may comprise a passage to provide the communication of the cooling gas. The dielectric inserts may be further configured to prevent line-of-sight between the workpiece surface of the electrostatic chuck and a conducting surface within the electrostatic chuck. | 07-15-2010 |
20100177455 | METHOD AND APPARATUS FOR REPAIRING AN ELECTROSTATIC CHUCK DEVICE, AND THE ELECTROSTATIC CHUCK DEVICE - In a repairing method for an electrostatic chuck device in which at least an adhesive layer and an attracting layer are provided on a metal base, a side surface of an eroded adhesive layer is wound with a string-like adhesive and thermal compression is performed thereafter. A repairing apparatus for an electrostatic chuck device, which is used in the repairing method, includes a rotatable table for rotating the electrostatic chuck device and a bobbin for supplying the adhesive to the adhesive layer. | 07-15-2010 |
20100188794 | Electrostatic chuck and device of manufacturing organic light emitting diode having the same - The present invention discloses an electrostatic chuck sucking and supporting a substrate with an electrostatic force and an OLED manufacturing apparatus having the same. The electrostatic chuck includes an insulating plate having at least one opening penetrating a center thereof, a pair of electrodes mounted on the insulating plate, a first controller applying a voltage to the pair of electrodes, and an electrostatic charge removing unit disposed near the insulating plate and emitting ions into the at least one opening to remove electrostatic charges distributed around a side of the insulating plate. | 07-29-2010 |
20100208409 | METHOD FOR OPTIMIZED REMOVAL OF WAFER FROM ELECTROSTATIC CHUCK - Systems and methods for optimally dechucking a wafer from an electrostatic chuck are described. The force on a lift-pin mechanism is monitored and a dechuck voltage is determined based on the force. The wafer is dechucked at the determined dechuck voltage. | 08-19-2010 |
20100220425 | ELECTROSTATIC CHUCK - An electrostatic chuck includes a dielectric layer | 09-02-2010 |
20100254063 | STEP DOWN DECHUCKING - A method and an apparatus for dechucking an electrostatic chuck are disclosed. The gas escapes through an opening between a wafer and a chuck in each stage of a multi-stages process. In each stage, during at least a portion of the stage, the chucking voltage is reduced to a value less than the least threshold voltage needed for holding the wafer, so that the wafer is pushed away from the chuck by the gas. Hence, the gas can escape from an opening between the wafer and the chuck, thereby increasing the dechucking rate. By controlling the decrement and/or the duration of the reduced voltage, any potential damages due to the pushed-away wafer can be minimized. | 10-07-2010 |
20100254064 | METHOD FOR MANUFACTURING GAS SUPPLY STRUCTURE IN ELECTROSTATIC CHUCK APPARATUS, GAS SUPPLY STRUCTURE IN ELECTROSTATIC CHUCK APPARATUS, AND ELECTROSTATIC CHUCK APPARATUS - Provided is a method of manufacturing a gas supply structure for use in an electrostatic chuck apparatus having an electrostatic chuck on the upper surface side of a metal base ( | 10-07-2010 |
20100254065 | ELECTROSTATIC CHUCK - A ceramic electrostatic chuck according to the present invention includes a dielectric layer, a support layer in contact with the back side of the dielectric layer, and an embedded electrostatic electrode. A wafer can be placed on the dielectric layer. The dielectric layer is formed of sintered aluminum nitride containing Sm and has a volume resistivity in the range of 4×10 | 10-07-2010 |
20100265631 | REMOVAL OF CHARGE BETWEEN A SUBSTRATE AND AN ELECTROSTATIC CLAMP - An electrostatic clamp, which more effectively removes built up charge from a substrate prior to and during removal, is disclosed. Currently, the lift pins and ground pins are the only mechanisms used to remove charge from the substrate after implantation. The present discloses describes a clamp having one of more additional low resistance paths to ground. These additional conduits allow built up charge to be dissipated prior to and during the removal of the substrate from the clamp. By providing sufficient charge drainage from the backside surface of the substrate | 10-21-2010 |
20100271745 | ELECTROSTATIC CHUCK AND BASE FOR PLASMA REACTOR HAVING IMPROVED WAFER ETCH RATE - An electrostatic chuck device in which the electrostatic chuck and support are made from high resistivity, high thermal conductivity and low RF energy loss dielectric materials is described. An advantage of this electrostatic chuck device is that the wafer surface electromagnetic field distribution is more uniform than conventional electrostatic chuck devices. As a result, the wafer etch rate, especially the wafer edge etch rate non-uniformity, is significantly improved compared with conventional electrostatic chuck devices. | 10-28-2010 |
20100271746 | ELECTROADHESIVE DEVICES - Described herein is electroadhesion technology that permits controllable adherence between two objects. Electroadhesion uses electrostatic forces of attraction produced by an electrostatic adhesion voltage, which is applied using electrodes in an electroadhesive device. The electrostatic adhesion voltage produces an electric field and electrostatic adherence forces. When the electroadhesive device and electrodes are positioned near a surface of an object such as a vertical wall, the electrostatic adherence forces hold the electroadhesive device in position relative to the surface and object. This can be used to increase traction or maintain the position of the electroadhesive device relative to a surface. Electric control of the electrostatic adhesion voltage permits the adhesion to be controllably and readily turned on and off. | 10-28-2010 |
20100277850 | Multi-Zone Electrostatic Chuck and Chucking Method - A method for processing a semiconductor wafer comprises measuring data indicating an amount of warpage of the wafer. At least two different voltages are determined, based on the amount of warpage. The voltages are to be applied to respective portions of the wafer by an electrostatic chuck that is to hold the wafer. The at least two different voltages are applied to hold the respective portions of the wafer while performing a fabrication process on the wafer. | 11-04-2010 |
20100284121 | ELECTROSTATIC CHUCK - An electrostatic chuck includes a dielectric board having an upper surface on which a plurality of projections for supporting a substrate on top surfaces and recesses surrounding the projections are formed, an electrode formed inside the dielectric board, and an external power supply which applies a voltage to the electrode. The dielectric board includes a conductor film formed on at least the top surface of each projection, and has a three-dimensional structure which causes the conductor film to generate a Johnson-Rahbeck force between the substrate and conductor film when a voltage is applied to the electrode. | 11-11-2010 |
20100309603 | ELECTROSTATIC-TYPE REINFORCEMENT APPARATUS - A reinforcement apparatus is for reinforcing a thin plate-like reinforcement object which is required to be temporarily reinforced in operating processes. The electrostatic-type reinforcement apparatus includes a reinforcement material body including a thin plate type electrostatic holding part formed by burying an electrode part into an electric insulating layer, and a voltage controller constituted to be separated from the reinforcement material body and having a first connecting terminal configured to allow an reinforcement object conducted to an earth and a second connecting terminal configured to allow the electrode part to be conducted to an earth or a high voltage. The voltage controller includes an attracting process part configured to attract the reinforcement object by generating an attraction force in the electrostatic holding part by supplying an electric charge of a reverse polarity to the charges supplied to the electrode part to the reinforcement object from the earth and an attraction releasing process part configured to cancel an electrostatic attracting ability by releasing charges stored in the reinforcing object and the electrode part from the earth. | 12-09-2010 |
20100309604 | Method and Apparatus for Chuck Thermal Calibration - Wafer temperature is measured as a function of time following removal of a heat source to which the wafer is exposed. During the wafer temperature measurements, a gas is supplied at a substantially constant pressure at an interface between the wafer and a chuck upon which the wafer is supported. A chuck thermal characterization parameter value corresponding to the applied gas pressure is determined from the measured wafer temperature as a function of time. Wafer temperatures are measured for a number of applied gas pressures to generate a set of chuck thermal characterization parameter values as a function of gas pressure. A thermal calibration curve for the chuck is generated from the set of measured chuck thermal characterization parameter values and the corresponding gas pressures. The thermal calibration curve for the chuck can be used to tune the gas pressure to obtain a particular wafer temperature during a fabrication process. | 12-09-2010 |
20100321856 | METHOD OF PLATEN FABRICATION TO ALLOW ELECTRODE PATTERN AND GAS COOLING OPTIMIZATION - An electrode pattern and layered assembly is disclosed. This assembly utilizes multiple-piece construction, including at least two electrically conductive layers and at least three electrically insulating layers. By incorporating a second electrically conductive layer, each electrode can be divided into two or more separate portions on the top layer, and joined together using the second conductive layer. Connections between the two conductive layers can be made using any suitable technique, including through-hole vias, conductive rods and the like. The use of a second electrically conductive layer also allows for a different gas distribution strategy. The use of multiple conductive layers allows the use of one or more concentric channels to be used through which the gas can be injected. | 12-23-2010 |
20110007447 | SUBSTRATE HOLDER, SUBSTRATE HOLDER UNIT, SUBSTRATE TRANSPORT APPARATUS, AND SUBSTRATE BONDING APPARATUS - A substrate holder is reliably transported in a state of holding a substrate. There is provided a substrate holder for holding a substrate by means of electrostatic force generated by power supplied from an external source. The substrate holder is to be transported in a state of holding the substrate. The substrate holder includes a holder body that is to have the substrate placed thereon, and a connector terminal that is externally exposed through the holder body, where the connector terminal is attachable to and detachable from an external power supply terminal. There is also provided a substrate transport apparatus for transporting a substrate holder holding a substrate by means of electrostatic force generated by power supplied from an external source. The substrate transport apparatus includes a placement section that has a placement surface on which the substrate holder is placed, where the placement section holds the substrate holder, and a power supply terminal that supplies power to the substrate holder placed on the placement surface. | 01-13-2011 |
20110013338 | Electrostatic chuck device - The object of this invention is to provide an electrostatic chuck device which can properly and promptly diselectrify a substrate to be processed. In an electrostatic chuck device attracting a substrate to be processed on the surface of a susceptor electrically, a diselectrifying circuit is provided which includes diselectrifying electrode means facing the surface of the susceptor, a diselectrifying potential, and a diselectrifying resistance connected between the diselectrifying electrode means and the diselectrifying potential. The resistance value of the diselectrifying resistance is established such that it is lower than that of an insulating layer of the surface of the susceptor and the diselectrifying resistance can hold the potential of the substrate during an electrostatic chuck operation, such that the diselectrifying resistance can dissipate the potential of the substrate into the ground potential when the electrostatic chuck is canceled. This structure can thus appropriately and promptly diselectrify the substrate. | 01-20-2011 |
20110026187 | Conductive Seal Ring Electrostatic Chuck - The present invention provides an improved electrostatic chuck for a substrate processing system. The electrostatic chuck comprising a main body having a top surface configured to support the substrate, a power supply to apply a voltage to the main body and a sealing ring disposed between the main body and the substrate wherein the sealing ring has a conductive layer. | 02-03-2011 |
20110032654 | Electrostatic Clamp Optimizer - A system which may be used to control, monitor and optimize an electrostatic clamp is disclosed. In one embodiment of the invention, there is a computer, a control circuit, and at least one amplifier. Also, a signal assessing circuit may be included and used to provide a sensing signal to an output signal of the control circuit. The signal assessing circuit may provide a sensing signal that can be used to monitor the capacitance of the electrostatic clamp. Further, the signal assessing circuit may include circuitry which monitors performance of the electrostatic clamp, and provide performance information to the control circuit. | 02-10-2011 |
20110051307 | PLASMA PROCESSING SYSTEM ESC HIGH VOLTAGE CONTROL AND METHODS THEREOF - An arrangement for securing a wafer during substrate processing is provided. The arrangement includes a power supply and an electrostatic chuck (ESC). The ESC supports the wafer and includes a positive and a negative terminal. A positive high voltage is provided to the positive terminal through an RF filter and a negative high voltage is provided to the negative terminal through the RF filter. The arrangement also includes a first and a second trans-impedance amplifiers (TIAs) that measure a first set of voltages for determining a value of a positive load current applied to the positive terminal and a third and fourth TIAs that measure a second set of voltages for determining a value of a negative load current applied to the negative terminal. The arrangement yet also includes a program to adjust a bias voltage using the values of the positive load current and the negative load current. | 03-03-2011 |
20110058302 | METHODS AND ARRANGEMENT FOR PLASMA DECHUCK OPTIMIZATION BASED ON COUPLING OF PLASMA SIGNALING TO SUBSTRATE POSITION AND POTENTIAL - A method for optimizing a dechuck sequence, which includes removing a substrate from a lower electrode. The method includes performing an initial analysis to determine if a first set of electrical characteristic data of a plasma formed during the dechuck sequence traverses a threshold values. If so, turning off the inert gas. The method also includes raising the lifter pins slightly from the lower electrode to move the substrate in an upward direction. The method further includes performing a mechanical and electrical analysis, which includes comparing a first set of mechanical data, which includes an amount of force exerted by the lifter pins, against a threshold value. The mechanical and electrical analysis also includes comparing a second set of electrical characteristic data against a threshold value. If both traverse the respective threshold value, removes the substrate from the lower electrode since a substrate-released event has occurred. | 03-10-2011 |
20110058303 | Wafer Support Member, Method for Manufacturing the Same and Electrostatic Chuck Using the Same - To provide a wafer support member that improves soaking properties of heating, the first wafer support member which comprises a base, an insulating material and a bonding layer that bonds the base and the insulating material, wherein the bonding layer has a stacked structure of a plurality of layers including a first layer and a second layer located closer to the insulating material than the first layer, and the first layer and the second layer have different thicknesses. | 03-10-2011 |
20110063771 | ELECTROSTATIC CHUCK AND METHOD FOR PRODUCING THE SAME - An electrostatic chuck | 03-17-2011 |
20110063772 | METHOD OF DETERMINING A TARGET MESA CONFIGURATION OF AN ELECTROSTATIC CHUCK - A method of modifying the heat transfer coefficient profile of an electrostatic chuck by configuring the areal density of a mesa configuration of an insulating layer of the chuck is provided. A method of modifying the capacitance profile of an electrostatic chuck by adjustment or initial fabrication of the height of a mesa configuration of an insulating layer of the chuck is further provided. The heat transfer coefficient at a given site can be measured by use of a heat flux probe, whereas the capacitance at a given site can be measured by use of a capacitance probe. The probes are placed on the insulating surface of the chuck and may include a plurality of mesas in a single measurement. A plurality of measurements made across the chuck provide a heat transfer coefficient profile or a capacitance profile, from which a target mesa areal density and a target mesa height are determined. The target density and height are achieved mechanically; the target density by mechanically adjusting the areal density of existing mesas; and the target height by creating or deepening low areas surrounding planned or existing mesas, respectively. This can be accomplished using any of known techniques for controlled material removal such as laser machining or grit blast machining on an X-Y table. | 03-17-2011 |
20110090613 | APPARATUS AND METHOD FOR SUBSTRATE CLAMPING IN A PLASMA CHAMBER - The present invention generally provides methods and apparatus for monitoring and maintaining flatness of a substrate in a plasma reactor. Certain embodiments of the present invention provide a method for processing a substrate comprising positioning the substrate on an electrostatic chuck, applying an RF power between the an electrode in the electrostatic chuck and a counter electrode positioned parallel to the electrostatic chuck, applying a DC bias to the electrode in the electrostatic chuck to clamp the substrate on the electrostatic chuck, and measuring an imaginary impedance of the electrostatic chuck. | 04-21-2011 |
20110096460 | ELECTROSTATIC CHUCK - An electrostatic chuck has a structure in which a heater is sandwiched between a base member and an electrostatic chuck substrate, the heater being bonded to the base member with an adhesive layer interposing therebetween. The adhesive layer interposing between the heater and the base member has a structure in which a first adhesive layer and a second adhesive layer are stacked, the first adhesive layer being formed by curing an adhesive having high thermal conductivity, the second adhesive layer being formed as gel by curing an adhesive having lower viscosity than the adhesive of the first adhesive layer. Preferably, the first and second adhesive layers are both made of a silicone-based resin. | 04-28-2011 |
20110096461 | SUBSTRATE FOR ELECTROSTATIC CHUCK AND ELECTROSTATIC CHUCK - An electrostatic chuck includes a metal base member and an insulating substrate having an opposite surface to an attraction surface joined onto the base member via an adhesive layer. In the substrate, an electrode layer to which a direct current voltage for attraction is applied is embedded in a portion of the substrate, close to the attraction surface. In addition, a plurality of independent RF electrode layers to which different radio frequencies for plasma control are fed, respectively, are embedded in portions of the substrate, at an opposite side of the first electrode layer to the attraction surface. The RF electrode layers are arranged separately in different layers which are not on an identical plane in such a manner as to partially overlap each other in a plan view. | 04-28-2011 |
20110102965 | BIPOLAR ELECTROSTATIC CHUCK - Provided is a bipolar electrostatic chuck, which has excellent substrate attracting/holding performance when a voltage is applied, and excellent residual charges reducing performance when voltage application is stopped. The bipolar electrostatic chuck includes at least an electrode layer including a first electrode and a second electrode, and an upper insulating layer which forms a substrate attracting surface for attracting a substrate. In a case where a surface of the electrode layer is regarded to be divided into a plurality of virtual cells having a predetermined width (L) in an x direction and a y direction, first electrode sections forming the first electrode and second electrode sections forming the second electrode are alternately arranged in the plurality of virtual cells in the x direction, and are alternately arranged in the plurality of virtual cells in the y direction. | 05-05-2011 |
20110110010 | WALL CRAWLING ROBOTS - Described herein is electroadhesion technology that permits controllable adherence between two objects. Electroadhesion uses electrostatic forces of attraction produced by an electrostatic adhesion voltage, which is applied using electrodes in an electroadhesive device. The electrostatic adhesion voltage produces an electric field and electrostatic adherence forces. When the electroadhesive device and electrodes are positioned near a surface of an object such as a vertical wall, the electrostatic adherence forces hold the electroadhesive device in position relative to the surface and object. This can be used to increase traction or maintain the position of the electroadhesive device relative to a surface. Electric control of the electrostatic adhesion voltage permits the adhesion to be controllably and readily turned on and off. | 05-12-2011 |
20110116207 | SUBSTRATE MOUNTING TABLE OF SUBSTRATE PROCESSING APPARATUS - A substrate mounting table of a substrate processing apparatus includes a base portion and a circular plate-shaped electrostatic chuck adhered to an upper surface of the base portion by an adhesive layer. The electrostatic chuck has a circular attracting surface to support a substrate. The substrate mounting table further includes an annular focus ring arranged around the electrostatic chuck to surround the substrate and to cover an outer peripheral portion of the upper surface of the base portion. The electrostatic chuck has a two-layer structure including an upper circular part and a lower circular part having a diameter larger than that of the upper circular part. An outer peripheral portion of the lower circular part and an outer peripheral portion of the adhesive layer adhering the lower circular part to the base portion are covered with the focus ring. | 05-19-2011 |
20110141650 | ELECTROSTATIC CHUCK DEVICE AND METHOD FOR DETERMINING ATTRACTED STATE OF WAFER - Provided is an electrostatic chuck device including attraction determining means, which enables a quick and accurate recognition of an attracted state of a substrate, and also provided is a method of determining an attracted state of a substrate, which enables a quick and accurate recognition of the attracted state of the substrate in the electrostatic chuck device. The electrostatic chuck device includes: an electrostatic chuck for attracting the substrate, the electrostatic chuck being provided on an upper surface side of a metal base; and attraction determining means for determining the attracted state of the substrate. Further, the method of determining an attracted state of a substrate is used for the electrostatic chuck device including the electrostatic chuck for attracting the substrate, the electrostatic chuck being provided on the upper surface side of the metal base, the method including obtaining, by a heat flux sensor, a flow of heat transferred from the substrate via the electrostatic chuck, to thereby determine the attracted state of the substrate. | 06-16-2011 |
20110149462 | ELECTROSTATIC CHUCK, PRODUCTION METHOD OF ELECTROSTATIC CHUCK AND ELECTROSTATIC CHUCK DEVICE - The present invention relates to an electrostatic chuck comprising a specific composite oxide sintered body, wherein in the sintered body, an L* value of a reflected color tone measured by a C light source on a 2° angle visual field condition is 10 or more and 50 or less in a CIEL*a*b* color system prescribed in JIS Z 8729-1994 and an electrostatic chuck device comprising an electrostatic chuck member (A) having a tabular body provided with a clamping surface for clamping a sample by the electrostatic force, an internal electrode layer for clamping a sample by electrostatic force which is provided on the back face of the tabular body and an insulation layer, wherein at least the sample clamping surface of the tabular body in the electrostatic chuck member (A) comprises the composite oxide sintered body constituting the electrostatic chuck described above. | 06-23-2011 |
20110157760 | ELECTROSTATIC CHUCK WITH REDUCED ARCING - Embodiments of electrostatic chucks are provided herein. In some embodiments, an electrostatic chuck may include a body having a notched upper peripheral edge, defined by a first surface perpendicular to a body sidewall and a stepped second surface disposed between the first surface and a body upper surface, and a plurality of holes disposed through the body along the first surface; a plurality of fasteners disposed through the plurality of holes to couple the body to a base disposed beneath the body; a dielectric member disposed above the body upper surface to electrostatically retain a substrate; an insulator ring disposed about the body within the notched upper peripheral edge and having a stepped inner sidewall that mates with the stepped second surface to define a non-linear interface therebetween; and an edge ring disposed over the insulator ring, the non-linear interface limiting arcing between the edge ring and the fastener. | 06-30-2011 |
20110157761 | ELECTROSTATIC CHUCK - Provided is an electrostatic chuck ( | 06-30-2011 |
20110164343 | HYBRID ELECTROSTATIC CHUCK - An electrostatic chuck ( | 07-07-2011 |
20110228439 | SUBSTRATE MOUNTING AND DEMOUNTING METHOD - A substrate mounting and demounting method that can prevent fine particles from getting stuck in a rear surface of a substrate. A substrate processing apparatus that implements the substrate mounting and demounting method has an electrostatic chuck that has therein an electrode plate to which a DC voltage is applied, and attracts and holds a substrate through an electrostatic force generated due to the applied DC voltage, and a heat-transmitting gas supply unit that supplies a heat-transmitting gas into a gap between the attracted and held substrate and the electrostatic chuck. When the DC voltage applied to the electrode plate is increased while being gradually changed, the pressure of the supplied heat-transmitting gas is increased in stages in response to the increase in the DC voltage. | 09-22-2011 |
20110292561 | TRAY FOR TRANSPORTING WAFERS AND METHOD FOR FIXING WAFERS ONTO THE TRAY - A tray for transporting a wafer is herein provided, which can control the temperature of the wafer upon the processing thereof, and which can easily fix the wafer without reducing the effective area on the surface of the wafer and without requiring much time for the adhesion of the wafer thereto and without requiring any post-treatment after the wafer is detached from or attached to the tray. The tray | 12-01-2011 |
20110292562 | MATCHED COEFFICIENT OF THERMAL EXPANSION FOR AN ELECTROSTATIC CHUCK - An apparatus and method are provided for selecting materials for forming an electrostatic clamp. The electrostatic clamp has a backing plate having a first coefficient of thermal expansion, wherein the backing plate provides structural support and rigidity to the electrostatic clamp. The electrostatic clamp further has a clamping plate having a clamping surface associated with contact with a workpiece, wherein the clamping plate has a second coefficient of thermal expansion associated therewith. The clamping plate is bonded, attached or grown to the backing plate, wherein minimal deflection of the clamping plate is evident across a predetermined temperature range. The first coefficient of thermal expansion and second coefficient of thermal expansion, for example, are substantially similar, and vary by no greater than a factor of three. | 12-01-2011 |
20110299217 | HEATED ELECTROSTATIC CHUCK INCLUDING MECHANICAL CLAMP CAPABILITY AT HIGH TEMPERATURE - An electrostatic clamp is provided, having a clamping plate, wherein a clamping surface of the clamping plate is configured to contact the workpiece. A voltage applied to one or more electrodes selectively electrostatically attracts the workpiece to the clamping surface. One or more auxiliary clamping members are further provided wherein the one or more auxiliary clamping members are configured to selectively secure at least a portion of the workpiece to the clamping surface. A temperature monitoring device configured to determine a temperature of the workpiece is provided, and a controller is configured to selectively clamp the workpiece to the clamping surface via a control of the voltage to the one or more electrodes and the one or more auxiliary clamping members, based, at least in part, on the temperature of the workpiece. | 12-08-2011 |
20110299218 | HEATED ANNULUS CHUCK - A clamping device and method is provided for securing first and second workpieces having different sizes to a clamping device and providing thermal conditioning thereto. An electrostatic clamping plate having a diameter associated with the first workpiece surrounds a central portion of the clamp. A non-electrostatic central portion provides a heater within the annulus, wherein the central portion has a diameter associated with the second workpiece. A workpiece carrier is provided, wherein the workpiece carrier is configured to hold the second workpiece above the heater, and wherein a diameter of the workpiece carrier is associated with the electrostatic clamping plate annulus. The annulus selectively electrostatically clamps the workpiece carrier or a circumferential portion of the first workpiece to its clamping surface, therein selectively maintaining a position of the first or second workpiece with respect to the annulus or non-electrostatic central portion. | 12-08-2011 |
20110310524 | WAFER CHUCK FOR EUV LITHOGRAPHY - A wafer chuck ( | 12-22-2011 |
20110310525 | SYSTEM FOR SECURELY DECHUCKING WAFERS - A system for chucking and de-chucking a work piece comprises a wafer stage having a chuck support for supporting a chuck. The wafer stage further comprises a chuck mounted on the chuck support for receiving and attaching the work piece thereto; a support lift means for supporting the work piece; a driving means coupled to the support lift means for gradually raising the support lift means to contact the work piece in response to a variable quantity; a controller for receiving the variable quantity; and a regulating means coupled to the driving means and to the controller, the regulating means for controlling the variable quantity going to the driving means when a predetermined variable quantity is detected. | 12-22-2011 |
20120002345 | SUBSTRATE SUPPORT TABLE OF PLASMA PROCESSING DEVICE - A substrate support stage of a plasma processing device, which stably controls a substrate at a relatively high temperature. The substrate support stage includes an electrostatic attraction plate ( | 01-05-2012 |
20120033340 | ELECTROSTATIC CHUCK AND METHODS OF USE THEREOF - An electrostatic chuck and method of use thereof is provided herein. In some embodiments, an electrostatic chuck may include a disk having a first side to support a substrate thereon and a second side, opposing the first side, to provide an interface to selectively couple the disk to a thermal control plate, a first electrode disposed within the disk proximate the first side to electrostatically couple the substrate to the disk and a second electrode disposed within the disk proximate the opposing side of the disk to electrostatically couple the disk to the thermal control plate. In some embodiments, the second electrode may also be configured to heat the disk. | 02-09-2012 |
20120044609 | Electrostatic Chuck With Polymer Protrusions - In accordance with an embodiment of the invention, there is provided an electrostatic chuck. The electrostatic chuck comprises a surface layer activated by a voltage in an electrode to form an electric charge to electrostatically clamp a substrate to the electrostatic chuck. The surface layer includes a plurality of polymer protrusions and a charge control layer to which the plurality of polymer protrusions adhere, the plurality of polymer protrusions extending to a height above portions of the charge control layer surrounding the plurality of polymer protrusions to support the substrate upon the plurality of polymer protrusions during electrostatic clamping of the substrate. | 02-23-2012 |
20120087058 | Image-Compensating Addressable Electrostatic Chuck System - Systems and methods are provided for utilizing an image-compensating addressable electrostatic chuck to correct for imaging errors of a lithographic system. An image-compensating addressable electrostatic chuck comprises a substrate, a plurality of first electrodes, a plurality of second electrodes, and a support layer. The plurality of first electrodes are disposed on the substrate and spaced evenly in a first direction. The plurality of second electrodes are disposed on the substrate and spaced evenly in a second direction, the second direction being generally orthogonal to the first direction. The support layer is disposed above the pluralities of electrodes to support an object. Positionally overlapping portions of the plurality of first and second electrodes form a matrix of electrostatic force points, such that a non-uniform electrostatic force acts on the object in proximity of a given force point upon energizing a pair of the plurality of first and second electrodes associated with the given force point. | 04-12-2012 |
20120120544 | ELECTROADHESIVE DEVICES - Described herein is electroadhesion technology that permits controllable adherence between two objects. Electroadhesion uses electrostatic forces of attraction produced by an electrostatic adhesion voltage, which is applied using electrodes in an electroadhesive device. The electrostatic adhesion voltage produces an electric field and electrostatic adherence forces. When the electroadhesive device and electrodes are positioned near a surface of an object such as a vertical wall, the electrostatic adherence forces hold the electroadhesive device in position relative to the surface and object. This can be used to increase traction or maintain the position of the electroadhesive device relative to a surface. Electric control of the electrostatic adhesion voltage permits the adhesion to be controllably and readily turned on and off. | 05-17-2012 |
20120120545 | ELECTROSTATIC ATTRACTING STRUCTURE AND FABRICATING METHOD THEREFOR - Provided are an electrostatic attracting structure which allows a strongly integrated structure to be maintained when used, and also allows the structure to be changed freely in configuration after the use, and a method of fabricating the same. The electrostatic attracting structure includes: a plurality of sheet members each having an electrode which is sandwiched between two dielectric materials; and at least one attraction power source, in which the plurality of sheet members are stacked, and by applying a voltage between the electrodes of facing sheet members, the facing sheet members are electrically attracted and fixed, when the electrostatic attracting structure is used, the dielectric material of any one of or both of outermost sheet members attracts the object to be attracted, and after the use, the stacked plurality of sheet members are made separable from one another by canceling the application of the voltage. | 05-17-2012 |
20120134065 | ELECTROSTATIC CHUCK AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE - An electrostatic chuck device including: a plurality of adsorption areas having an electrode generating electrostatic attractive force; and a control portion controlling the electrostatic attractive force against each of the plurality of the adsorption areas independently of other adsorption areas. | 05-31-2012 |
20120154974 | HIGH EFFICIENCY ELECTROSTATIC CHUCK ASSEMBLY FOR SEMICONDUCTOR WAFER PROCESSING - The present invention generally provides a high efficiency electrostatic chuck including a flex stack having an electrode disposed between two layers of dielectric material. At least one of the layers is a standard or high purity thermoplastic film. The flex stack may have a matte finish on the substrate supporting surface to provide benefits such as improved temperature distribution across the surface of the chuck. The non-substrate supporting or pedestal receiving side of the flex stack may be plasma treated to provide a desired surface finish, which is then bonded to a pedestal using an acrylic or epoxy adhesive resulting in superior bonding strength compared to traditional polymer electrostatic chucks. The electrode may be a sheet electrode on a release liner, which enables ease of manufacturing. | 06-21-2012 |
20120236458 | PROCESSING AN EMBEDDED METAL FILM, AND COMPONENT WITH AN EMBEDDED METAL FILM - A method for processing a metal film ( | 09-20-2012 |
20120250211 | MEMBER FOR SEMICONDUCTOR MANUFACTURING APPARATUS - An electrostatic chuck is provided with a ceramic substrate | 10-04-2012 |
20120250212 | METHOD FOR PRODUCING ELECTROSTATIC CHUCK AND ELECTROSTATIC CHUCK - A method for producing an electrostatic chuck | 10-04-2012 |
20120250213 | SUBSTRATE REMOVING METHOD AND STORAGE MEDIUM - A substrate processing apparatus includes an electrostatic chuck enclosing an electrostatic electrode plate and a chamber having a ground potential and housing the electrostatic chuck. DC discharge is generated between a wafer and the chamber by setting the potential of the electrostatic electrode plate of the electrostatic chuck which is maintained at a first predetermined potential during a plasma etching process to a ground potential after the plasma etching process to increase the absolute value of the potential difference between the wafer and the chamber. DC discharge is then re-generated by applying, to the electrostatic electrode plate, DC voltage having the same potential as a second predetermined potential which is generated at the wafer after the DC discharge is generated, and by increasing the absolute value of the potential difference between the wafer and the chamber. The wafer is then easily removed from the electrostatic chuck. | 10-04-2012 |
20120250214 | SUBSTRATE REMOVING METHOD AND STORAGE MEDIUM - A substrate processing apparatus includes an electrostatic chuck enclosing an electrostatic electrode plate and a chamber having a ground potential and housing the electrostatic chuck. When the absolute value of the potential generated at a wafer after DC discharge is generated between the wafer and the chamber is 0.5 kV, the potential of the electrostatic electrode plate is changed from 2.5 kV to 1.5 kV to generate DC discharge so that the absolute value of the potential of a placing surface of the wafer of the electrostatic chuck becomes 0.5 kV after the plasma etching process, the polarities of the potential of the placing surface after the change and the wafer become the same, and the absolute value of the potential difference between the wafer and the chamber becomes 0.5 kV or more. The wafer is then removed from the electrostatic chuck. | 10-04-2012 |
20120262834 | ELECTROSTATIC CHUCK AND A METHOD FOR SUPPORTING A WAFER - An electrostatic chuck includes an isolating substrate that surrounds at least one electrode; multiple protrusions having upper portions arranged to contact a wafer; and at least one discharging element positioned between the at least one electrode and the upper portions of the multiple protrusions; which discharging element, once coupled to a discharging circuit, is arranged to discharge charge accumulated in the isolating substrate. | 10-18-2012 |
20120281333 | TEMPERATURE-CONTROLLABLE ELECTROSTATIC CHUCK - The invention is directed to a temperature-controllable electrostatic chuck having a heat-transfer body, one or more electrodes and one or more thermopile devices. The heat-transfer body transfers heat between the interior of the electrostatic chuck and the exterior of the electrostatic chuck via a heat-transfer assembly with heat-transfer fluid circulated to and from an external chiller. The one or more thermopile devices are in series between the heat-transfer body and a top surface of the electrostatic chuck, so that heat may be further transferred between a workpiece held on the top surface and the heat-transfer body. Accordingly, because the workpiece temperature may be adjusted by both the external chiller and the thermopile devices, the workpiece temperature may be further lowered when the cold sides of the thermopile device face the workpiece. Otherwise, the workpiece temperature may be further elevated when the hot sides of the thermopile device face the workpiece. | 11-08-2012 |
20120281334 | ELECTROSTATIC CHUCK APPARATUS - Disclosed is an electrostatic chuck apparatus which is configured of: an electrostatic chuck section; an annular focus ring section provided to surround the electrostatic chuck section; and a cooling base section which cools the electrostatic chuck section and the focus ring section. The focus ring section is provided with an annular focus ring, an annular heat conducting sheet, an annular ceramic ring, a nonmagnetic heater, and an electrode section that supplies power to the heater. | 11-08-2012 |
20120287552 | SUBSTRATE TEMPERATURE ADJUSTING-FIXING DEVICE - A disclosed substrate temperature adjusting-fixing device includes an electro static chuck attracting and holding an attractable object onto a base body having a built-in electrode by applying a voltage to the electrode, a base plate fixing the electro static chuck via an adhesive layer, a power supplying portion electrically connected to the electrode, and a retaining portion holding the power supplying portion, wherein the retaining portion includes a main body and a sealing portion, the main body is fixed to the base plate and has recesses opened on an opposite side of the adhesive layer and a through hole penetrating through the main body, the power supplying portion includes an electrode pin and an electric wire, the electric wire is wired inside the adhesive layer, the through hole and the recesses to electrically connect the electrode with the electrode pin, and the sealing portion fills the recesses. | 11-15-2012 |
20120300357 | METHOD AND APPARATUS FOR REPAIRING AN ELECTROSTATIC CHUCK DEVICE, AND THE ELECTROSTATIC CHUCK DEVICE - In a repairing method for an electrostatic chuck device in which at least an adhesive layer and an attracting layer are provided on a metal base, a side surface of an eroded adhesive layer is wound with a string-like adhesive and thermal compression is performed thereafter. A repairing apparatus for an electrostatic chuck device, which is used in the repairing method, includes a rotatable table for rotating the electrostatic chuck device and a bobbin for supplying the adhesive to the adhesive layer. | 11-29-2012 |
20120307412 | ELECTROSTATIC CHUCK ALN DIELECTRIC REPAIR - The present invention generally relates to a refurbished electrostatic chuck and a method of refurbishing a used electrostatic chuck. Initially, a predetermined amount of dielectric material is removed from the used electrostatic chuck to leave a base surface. Then, the base surface is roughened to enhance the adherence of new dielectric material thereto. The new dielectric material is then sprayed onto the roughened surface. A mask is then placed over the new dielectric material to aid in the formation of mesas upon which a substrate will sit during processing. A portion of the new dielectric layer is then removed to form new mesas. After removing the mask, edges of the mesas may be smoothed and the refurbished electrostatic chuck is ready to return to service after cleaning. | 12-06-2012 |
20120320491 | ELECTROSTATIC CHUCK - An electrostatic chuck for manufacturing a flat panel display is disclosed. In one embodiment, the electrostatic chuck includes i) a base substrate, ii) an insulating layer formed on the base substrate and iii) a conductive layer formed on the insulating layer and electrically connected to a power device. The electrostatic chuck further includes iv) a dielectric layer formed on the conductive layer and comprising an emboss part and a trench part, wherein the emboss part comprises at least one protrusion, and wherein the trench part comprises at least one channel and surrounds the emboss part and v) a cooling gas line extending through the base substrate, the insulating layer, the conductive layer, and the dielectric layer. | 12-20-2012 |
20130003248 | SUBSTRATE LIFTING METHOD AND SUBSTRATE LIFTING DEVICE - A method for picking up a substrate includes leading an electrostatic holder to the substrate, applying an electrical voltage having a first voltage value to the electrostatic holder in such a way that the substrate is accelerated in the direction of the electrostatic holder, and reducing the voltage applied to the electrostatic holder to a second voltage value, the absolute value of which is lower than the first voltage value. | 01-03-2013 |
20130003249 | ELECTROSTATIC CHUCKS, SUBSTRATE TREATING APPARATUSES INCLUDING THE SAME, AND SUBSTRATE TREATING METHODS - Provided is an electrostatic chuck for fixing a substrate by using an electrostatic force, which include a dielectric plate on which the substrate is placed, a first electrode disposed in an inner center region of the dielectric plate, and charged negatively or positively, and a second electrode disposed in an inner edge region of the dielectric plate to surround the first electrode, and charged with polarity opposite to that of the first electrode. The second electrode has an area different from that of the first electrode. | 01-03-2013 |
20130003250 | SUBSTRATE HOLDING DEVICE - A substrate holding device for clamping a substrate in a processing chamber in which plasma processing is carried out includes a chuck main body having positive and negative electrodes and, a chuck plate having a rib portion capable of bringing the peripheral edge portion of the substrate into surface contact therewith and multiple support portions provided upright and arranged at predetermined intervals in an internal space surrounded by the rib portion, a DC power supply for applying a DC voltage between the two electrodes, an AC power supply for passing an alternating current through the capacitance of the chuck plate, and first measuring means for measuring the alternating current passing through the capacitance of the chuck plate, and further includes removing means for removing an AC component superimposed on the alternating current from a plasma produced in the processing chamber during plasma processing. | 01-03-2013 |
20130010398 | Materials for Electroadhesion and Electrolaminates - An electroadhesive device includes an outer surface adapted to interface with a surface of a foreign substrate, a plurality of electrodes ( | 01-10-2013 |
20130021717 | ELECTROSTATIC CHUCK WITH WAFER BACKSIDE PLASMA ASSISTED DECHUCK - An electrostatic chuck assembly useful in a plasma processing chamber, comprising a support surface on which a semiconductor wafer is supported during processing of the wafer in the chamber, at least one electrostatic clamping electrode which applies an electrostatic clamping force to the wafer on the support surface when an electrostatic clamping voltage is applied to the clamping electrode, at least one outlet in the support surface which delivers a heat transfer gas to an underside of the wafer, at least one gas passage connected to a source of heat transfer gas operable to supply heat transfer gas at a desired pressure to the at least one gas passage, and at least one cavity and plasma generating electrode along the at least one gas passage, the plasma generating electrode operable to form a dechucking plasma in the cavity, the dechucking plasma being effective to neutralize charges on the underside of the wafer and support surface of the electrostatic chuck and thereby reduce a residual sticking force between the wafer and the support surface. | 01-24-2013 |
20130027838 | ELECTROSTATIC CHUCK - An electrostatic chuck includes: a ceramic substrate; a ceramic dielectric body provided on a top side of the ceramic substrate and having a first major surface where a processing target substrate is to be mounted; and an electrode provided between the ceramic substrate and the ceramic dielectric body. A material of the ceramic dielectric body is a ceramic sintered body. A plurality of protrusions and a groove for supplying a gas are provided on the first major surface of the ceramic dielectric body. A through hole is provided in a bottom face of the groove, the through hole penetrating to a second major surface of the ceramic substrate on a side opposite to the first major surface. A distance between the electrode and the groove is greater than or equal to a distance between the electrode and the first major surface. | 01-31-2013 |
20130058001 | ELECTROADHESIVE GRIPPING - An electroadhesive gripping device or system includes a plurality of electroadhesive gripping surfaces, each having electrode(s) and each configured to be placed against respective surface regions of a foreign object, such that one or more electroadhesive forces can be provided between the electroadhesive gripping surfaces and the foreign object. Such electroadhesive forces operating to hold the foreign object against the electroadhesive gripping surfaces while the foreign object is held or moved by the electroadhesive gripping system. The electroadhesive gripping surfaces can be arranged onto a plurality of continuous fingers, and various gripping surfaces on each finger can be coupled together and manipulated with respect to each other by an actuating component, such as a cable actuator. A variable voltage can be delivered to the electrodes to control the amount of electroadhesive force generated, such that only a portion of a foreign object is held or moved. | 03-07-2013 |
20130070384 | High Surface Resistivity Electrostatic Chuck - In accordance with an embodiment of the invention, there is provided an electrostatic chuck. The electrostatic chuck comprises an electrode, and a surface layer activated by a voltage in the electrode to form an electric charge to electrostatically clamp a substrate to the electrostatic chuck, the surface layer including a charge control layer comprising a surface resistivity of greater than about 10 | 03-21-2013 |
20130088808 | ELECTROSTATIC CHUCK - Embodiments of electrostatic chucks are provided herein. In some embodiments, an electrostatic chuck for retaining a substrate includes a base plate, a ceramic plate, supported by the base plate, having a substrate supporting surface, a first plurality of electrodes disposed within the ceramic plate having a first polarity, and a second plurality of electrodes disposed within the ceramic plate have a second polarity opposite from the first polarity, wherein the first and second plurality of electrodes are independently controllable to provide a desired chucking power and frequency. | 04-11-2013 |
20130088809 | ELECTROSTATIC CHUCK WITH TEMPERATURE CONTROL - Embodiments of an apparatus for controlling a temperature of an electrostatic chuck in a process chamber are provided herein. In some embodiments, the apparatus includes an electrostatic chuck disposed in a process chamber, the electrostatic chuck including a ceramic plate having a substrate supporting surface, and a cooling assembly including a plurality of cooling plates disposed below the electrostatic chuck to adjust the cooling capacity of the electrostatic chuck. In some embodiments, the plurality of cooling plates includes an inner cooling plate configured to control a temperature of a center portion of the electrostatic chuck, and an outer cooling plate configured to control a temperature of an outer portion of the electrostatic chuck. In some embodiments, the plurality of cooling plates includes an upper cooling plate that contacts a bottom surface of the electrostatic chuck, and a lower cooling plate which contacts a bottom surface of the upper cooling plate. | 04-11-2013 |
20130100572 | APPARATUS AND METHOD FOR HOLDING A WAFER - An apparatus and a method for holding a wafer are provided in this disclosure. The wafer holding apparatus includes: an electrostatic chuck, the electrostatic chuck having a plurality of concentric zones; a plurality of power supply units, each adapted for applying a voltage to one of the zones of the electrostatic chuck independently; and a control unit, adapted for controlling each of the power supply units independently to start or stop applying the voltage to a corresponding zone of the electrostatic chuck. Surface flatness is improved when the wafer is chucked on the wafer holding apparatus according to the disclosure, and the risk of particle contamination can be reduced when the wafer is flattened and gets back into warpage from flatness. | 04-25-2013 |
20130100573 | APPARATUS AND METHOD FOR HOLDING A WAFER - An apparatus and a method for holding a wafer are provided in this disclosure. The wafer holding apparatus includes: an electrostatic chuck which has a plurality of zones arranged in a matrix; a plurality of power supply units, each of which is adapted to apply a voltage to the plurality of zones of the electrostatic chuck independently; and a control unit which is adapted to control each of the power supply units independently to start or stop applying the voltage to a corresponding zone of the electrostatic chuck. Surface flatness is improved when the wafer is chucked on the wafer holding apparatus according to the disclosure, and the risk of particles contamination can be reduced when the wafer is flattened and gets back into warpage from flatness. | 04-25-2013 |
20130107415 | ELECTROSTATIC CHUCK | 05-02-2013 |
20130114181 | Substrate Clamping System and Method for Operating the Same - An electrostatic chuck includes an electrically conductive baseplate and an electrically non-conductive substrate support member disposed on the baseplate. First and second sets of clamp electrodes are disposed within the support member. A power supply system includes a clamp power supply, a center tap power supply, and a baseplate power supply. The clamp power supply generates a positive output voltage and a negative output voltage, each of which is equidistant from a center tap voltage. The positive output voltage is electrically connected to the first set of clamp electrodes. The negative output voltage is electrically connected to the second set of clamp electrodes. The center tap power supply is defined to control the center tap voltage of the clamp power supply. The baseplate power supply is defined to generate a baseplate output voltage independent from the center tap voltage. The baseplate output voltage is electrically connected to the baseplate. | 05-09-2013 |
20130120897 | Electrostatic Chuck with Photo-Patternable Soft Protrusion Contact Surface - In accordance with an embodiment of the invention, there is provided a soft protrusion structure for an electrostatic chuck, which offers a non-abrasive contact surface for wafers, workpieces or other substrates, while also having improved manufacturability and compatibility with grounded surface platen designs. The soft protrusion structure comprises a photo-patternable polymer. | 05-16-2013 |
20130128409 | Peripheral RF Feed and Symmetric RF Return for Symmetric RF Delivery - Systems and methods are presented for a peripheral RF feed and symmetric RF return for symmetric RF delivery. According to one embodiment, a chuck assembly for plasma processing is provided. The chuck assembly includes an electrostatic chuck having a substrate support surface on a first side, and a facility plate coupled to the electrostatic chuck on a second side that is opposite the substrate support surface. A hollow RF feed is configured to deliver RF power, the hollow RF feed defined by a first portion contacting a periphery of the facility plate and a second portion coupled to the first portion, the second portion extending away from the chuck assembly. | 05-23-2013 |
20130135784 | Electrostatic Chuck Robotic System - A workpiece transfer system has a plurality of joints having a bearing and a primary and secondary transformer coil, wherein power provided to the primary transformer coil and secondary transformer coil of each joint produces mutual inductance between the primary and secondary transformer coil of the respective joint. A first pair of arms are rotatably coupled to a blade by a first pair of the joints, wherein the primary transformer coil of each of the first pair of joints is operably coupled to the first pair of arms, and the secondary transformer coil of each of the first pair of joints is operably coupled to the blade and an electrode beneath a dielectric workpiece retaining surface of the blade. The electrode is contactlessly energized through the transformer coils of the joint and the blade can chuck and de-chuck a workpiece by reversing current directions and by voltage adjustment. | 05-30-2013 |
20130141833 | MOBILE ELECTROSTATIC CARRIERS FOR THIN WAFER PROCESSING - In one embodiment, there is provided a carrier comprising a top semiconductor layer having isolated positive electrode regions and isolated negative electrode regions separated by a frontside trench through the top semiconductor layer at least to an underlying insulating layer positioned between the top semiconductor layer and a bottom semiconductor layer. A dielectric layer covers the top exposed surfaces of the carrier. Backside trenches through the bottom semiconductor layer at least to the insulating layer form isolated backside regions corresponding to the frontside positive and negative electrode regions. Backside contacts positioned on the bottom semiconductor layer and coupled to the positive and negative electrode regions allow for the electric charging of the frontside electrode regions. | 06-06-2013 |
20130148253 | SUBSTRATE TEMPERATURE ADJUSTING-FIXING DEVICE AND MANUFACTURING METHOD THEREOF - A substrate temperature adjusting-fixing device includes an electro static chuck attracting and holding an object to be attracted; a base plate to which the electro static chuck is fixed; an adhesive layer formed between the electro static chuck and the base plate; and a heat insulation layer formed between the electro static chuck and the base plate, wherein the electro static chuck includes a base body having a mounting surface on which the object to be attracted is mounted, a heat generator directly formed on a surface opposite to the mounting surface of the base body, and an insulating layer formed to cover the heat generator. | 06-13-2013 |
20130155568 | EXTENDED AND INDEPENDENT RF POWERED CATHODE SUBSTRATE FOR EXTREME EDGE TUNABILITY - Apparatus for processing substrates are provided herein. In some embodiments, an apparatus for processing a substrate may include a substrate support comprising a first electrode disposed within the substrate support and having a peripheral edge and a first surface; a substrate support surface disposed above the first surface of the first electrode; and a second electrode disposed within the substrate support and extending radially beyond the peripheral edge of the first electrode, wherein the second electrode has a second surface disposed about and above the first surface of the first electrode. | 06-20-2013 |
20130155569 | High Conductivity Electrostatic Chuck - In accordance with an embodiment of the invention, there is provided an electrostatic chuck comprising a conductive path covering at least a portion of a workpiece-contacting surface of a gas seal ring of the electrostatic chuck, the conductive path comprising at least a portion of an electrical path to ground; and a main field area of a workpiece-contacting surface of the electrostatic chuck comprising a surface resistivity in the range of from about 10 | 06-20-2013 |
20130201596 | Electrostatic Chuck with Multi-Zone Control - An electrostatic chuck for clamping a warped workpiece has a clamping surface comprising a dielectric layer. The dielectric layer has a field and one or more zones formed of differing dielectric materials. One or more electrodes are coupled to a power supply, and a controller controls a clamping voltage supplied to the one or more electrodes via the power supply. An electrostatic attraction force associated with each of the field and one or more zones of the dielectric layer of the electrostatic chuck is induced, wherein the electrostatic attraction force varies based on the dielectric material of each of the field and one or more zones. The electrostatic attraction force is greater in the one or more zones than in the field, therein attracting warped regions of the workpiece to the clamping surface and clamping the warped workpiece to the clamping surface across a surface of the warped workpiece. | 08-08-2013 |
20130201597 | ELECTROSTATIC CHUCK - An electrostatic chuck comprises: a dielectric substrate having a protrusion and a planar surface part. The protrusion is formed on a major surface of the dielectric substrate. An adsorption target material is mounted on the major surface. The planar surface part is formed in a periphery of the protrusion. The dielectric substrate is formed from a polycrystalline ceramics sintered body. A top face of the protrusion is a curved surface, and a first recess is formed in the top face to correspond to crystal grains that appear on the surface. The planar surface part has a flat part, and a second recess is formed in the flat part. A depth dimension of the first recess is greater than a depth dimension of the second recess. The electrostatic chuck can suppress the generation of particles and can easily recover a clean state of the electrostatic chuck surface. | 08-08-2013 |
20130201598 | ELECTROSTATIC CHUCK AND METHOD OF MANUFACTURING ELECTROSTATIC CHUCK - An electrostatic chuck comprises: a dielectric substrate having a protrusion and a planar surface part. The protrusion is formed on a major surface of the dielectric substrate. An adsorption target material is mounted on the major surface. The planar surface part is formed in a periphery of the protrusion. The dielectric substrate is formed from a polycrystalline ceramics sintered body. A top face of the protrusion is a curved surface, and a first recess is formed in the top face to correspond to crystal grains that appear on the surface. The planar surface part has a flat part, and a second recess is formed in the flat part. A depth dimension of the first recess is greater than a depth dimension of the second recess. The electrostatic chuck can suppress the generation of particles and a method for manufacturing the electrostatic chuck is provided. | 08-08-2013 |
20130229746 | ELECTROSTATIC CHUCK - An electrostatic chuck | 09-05-2013 |
20130235506 | Method and Apparatus for Chuck Thermal Calibration - A chuck includes a first material layer having an upper surface upon which a wafer is supported. The upper surface includes portions that physically contact the wafer and portions that form gaps between the upper surface and the wafer. The chuck also includes a second material layer defined to support the first material layer. The second material layer is formed of a thermally conductive material and includes a first number of channels. The chuck also includes a second number of channels defined to direct a gas to portions of the upper surface that form gaps between the upper surface and the wafer. The chuck is characterized by a thermal calibration curve that represents a thermal interface between the upper surface and the wafer, heat transfer through the first material layer to the second material layer, and heat transfer through the second material layer to the first number of channels. | 09-12-2013 |
20130235507 | ELECTROSTATIC CHUCK - Electrostatic chucks ( | 09-12-2013 |
20130242455 | Electroadhesive Handling And Manipulation - An electroadhesive gripping system includes a shear gripper. The shear gripper can include an electroadhesive surface associated with one or more electrodes and a load-bearing structure coupled to the electroadhesive surface. A power supply can be configured to apply voltage to the one or more electrodes associated with the electroadhesive surface. A controller can be configured to cause a voltage to be applied, via the power supply, to the one or more electrodes associated with the electroadhesive surface to thereby cause the first shear gripper to adhere to an item situated proximate the electroadhesive surface. The controller can be configured to cause a shear force to be applied to the adhered item, via the load-bearing structure, that is sufficient to move the adhered item. | 09-19-2013 |
20130250471 | COMPRESSIBLE CONDUCTIVE ELEMENT FOR USE IN CURRENT-CARRYING STRUCTURE - An electrostatic chuck is provided and can include a body having a surface for receiving a wafer. An electrode can be embedded in the body and spaced beneath the surface by a layer. A compressible element having a first end portion electrically coupled to the electrode and a second end portion coupleable to the electrical connector can be provided to inhibit damage to the exposed portion of the electrode and the layer during use. Other embodiments of an electrostatic chuck and embodiments of a conductive element are provided, and an embodiment of a wafer heater is provided. | 09-26-2013 |
20130265690 | ELECTROSTATIC CHUCK APPARATUS - An electrostatic chuck apparatus is disclosed which can be prevented from being damaged or fractured when the temperature abruptly increases or decreases when plasma is irradiated on a plate-like specimen, the heater is heated, or the like, and can also prevent corrosion when a corrosive gas or plasma is provided. The electrostatic chuck apparatus has an electrostatic chuck portion | 10-10-2013 |
20130279066 | ELECTROSTATIC CHUCK WITH ADVANCED RF AND TEMPERATURE UNIFORMITY - Electrostatic chucks (ESCs) with RF and temperature uniformity are described. For example, an ESC includes a top dielectric layer. An upper metal portion is disposed below the top dielectric layer. A second dielectric layer is disposed above a plurality of pixilated resistive heaters and surrounded in part by the upper metal portion. A third dielectric layer is disposed below the second dielectric layer, with a boundary between the third dielectric layer and the second dielectric layer. A plurality of vias is disposed in the third dielectric layer. A bus power bar distribution layer is disposed below and coupled to the plurality of vias. A fourth dielectric layer is disposed below the bus bar power distribution layer, with a boundary between the fourth dielectric layer and the third dielectric layer. A metal base is disposed below the fourth dielectric layer. The metal base includes a plurality of high power heater elements housed therein. | 10-24-2013 |
20130286530 | METHODS AND APPARATUS TOWARD PREVENTING ESC BONDING ADHESIVE EROSION - Embodiments of the present invention provide chamber components having a protective element for shielding bonding material from processing environments in a processing environment. The protective element may include protective seals, protective structures, erosion resistive fillers, or combinations thereof. Embodiments of the present invention reduce erosion of bonding material used in a processing chamber, thus, improving processing quality and reducing maintenance costs. | 10-31-2013 |
20130286531 | ELECTROSTATIC CHUCK - An electrostatic chuck includes a base having a first through hole extending through the base. An electrostatic chuck attraction plate is bonded to the base. An attraction electrode is incorporated in the electrostatic chuck attraction plate to generates electrostatic charge and electrostatically attract an attraction subject. A recess is formed in the electrostatic chuck attraction plate in alignment with the first through hole. The recess partially exposes the attraction electrode. An adhesive layer is formed between the electrostatic chuck attraction plate and the base. The adhesive layer covers an inner surface of the recess. A tubular insulator is arranged in the recess. The tubular insulator includes a second through hole. A power supply terminal is arranged in the first through hole and the second through hole. The power supply terminal includes a distal portion electrically connected to the attraction electrode. | 10-31-2013 |
20130286532 | SEMICONDUCTOR MANUFACTURING APPARATUS MEMBER - In a semiconductor manufacturing apparatus member | 10-31-2013 |
20130286533 | MEMBER FOR SEMICONDUCTOR MANUFACTURING APPARATUS | 10-31-2013 |
20130308244 | ELECTROSTATIC CHUCK AND METHOD FOR MANUFACTURING THE ELECTROSTATIC CHUCK - An electrostatic chuck includes a pedestal part formed of metal and including a gas passage, an insulation substrate mounted on the pedestal part and including a first surface facing the pedestal part and a second surface on an opposite side of the first surface, the first surface including a first hole part communicating with the gas passage, the second surface including a second hole part having a bore diameter less than that of the first hole part and communicating with the first hole part, and an insulation flow part formed of an insulating material and including a first end provided in the first hole part and a second end provided in the gas passage. The insulation flow part is configured to allow a gas supplied from the gas passage to flow into the second hole part. | 11-21-2013 |
20130321973 | THIN SUBSTRATE ELECTROSTATIC CHUCK SYSTEM AND METHOD - In various aspects of the disclosure, a semiconductor substrate processing system may include an electrostatic chuck for holding a semiconductor substrate attached to an electrically insulating carrier; and an AC power supply electrically coupled to the electrostatic chuck. | 12-05-2013 |
20130321974 | ELECTROSTATIC CHUCK AND METHOD FOR MANUFACTURING ELECTROSTATIC CHUCK - An electrostatic chuck plate is connected to a base plate, which includes a cooling mechanism, by an adhesive layer. The electrostatic chuck plate includes a substrate setting surface on which a processed substrate is set, an electrostatic electrode capable of attracting the processed substrate, and a resistance heat generation body capable of heating the processed substrate. The electrostatic electrode and the resistance heat generation body are incorporated in the electrostatic chuck plate. An adjustment portion is arranged at a position according to a temperature distribution of the substrate setting surface in at least one of the upper surface of the base plate and a lower surface of the electrostatic chuck plate that faces the upper surface through the adhesive layer. The adjustment portion is filled with a resin having a heat conductivity according to the temperature distribution. | 12-05-2013 |
20130342951 | Techniques for reducing arcing-related damage in a clamping ring of a plasma processing system - A clamping ring configured to be coupled to a chamber structure of a plasma processing chamber is disclosed. The clamping ring has a plurality of holes for accommodating a plurality of fasteners. The clamping ring includes a plurality of flanges disposed around an outer periphery of the clamping ring, adjacent flanges of the plurality of flanges being disposed such that a hole of the plurality of holes that is disposed in between the adjacent flanges is about equidistant from the adjacent flanges. The plurality of flanges are configured to mate with the chamber structure. The clamping ring and the flanges are dimensioned such that when the plurality of flanges mate with the chamber structure, recesses between adjacent ones of the plurality of flanges form gaps between the clamping ring and the chamber structure. | 12-26-2013 |
20130342952 | SUBSTRATE MOUNTING TABLE AND SUBSTRATE PROCESSING APPARATUS - A substrate processing apparatus includes a processing chamber and a substrate mounting table. The processing chamber defines a processing space. The substrate mounting table includes a base and an electrostatic chuck, and is disposed in the processing space. The base has a coolant path formed therein. The electrostatic chuck is provided on the upper surface of the base through an adhesive layer formed by curing a liquid adhesive, and has an electrode therein. Here, a first adhesive region is provided on the upper surface of the base, and is adhered to the electrostatic chuck through the adhesive layer. The first adhesive region has a center portion recessed compared with the end portion of the first adhesive region. | 12-26-2013 |
20140036403 | SUBSTRATE HOLDER, SUBSTRATE HOLDER UNIT, SUBSTRATE TRANSPORT APPARATUS, AND SUBSTRATE BONDING APPARATUS - A substrate holder is reliably transported in a state of holding a substrate. There is provided a substrate holder for holding a substrate by means of electrostatic force generated by power supplied from an external source. The substrate holder is to be transported in a state of holding the substrate. The substrate holder includes a holder body that is to have the substrate placed thereon, and a connector terminal that is externally exposed through the holder body, where the connector terminal is attachable to and detachable from an external power supply terminal. There is also provided a substrate transport apparatus for transporting a substrate holder holding a substrate by means of electrostatic force generated by power supplied from an external source. The substrate transport apparatus includes a placement section that has a placement surface on which the substrate holder is placed, where the placement section holds the substrate holder, and a power supply terminal that supplies power to the substrate holder placed on the placement surface. | 02-06-2014 |
20140036404 | Vacuum Augmented Electroadhesive Device - An electroadhesive gripping system includes a vacuum-augmented gripper. The gripper can include an electroadhesive surface associated with one or more electrodes and a load-bearing backing structure coupled to the electroadhesive surface. The backing couples to the backside of the electroadhesive surface so as to at least partially define a shape of the electroadhesive surface. The backing is configured to flex between a curled shape and an uncurled shape. A spreading arm is configured to apply force to the backing so as to flex the backing from the curled shape to the uncurled shape. When positioned next to a substrate, the uncurling motion of the backing can cause the electroadhesive surface to become vacuum sealed to the substrate. A power supply can be configured to apply voltage to the electroadhesive surface. | 02-06-2014 |
20140055907 | Electrostatic Carrier Tray - An electrostatic carrier tray is an apparatus that is used to temporarily grasp and to transport semiconductive coupons/wafers. The apparatus mainly includes a primary substrate, a plurality of electrostatics field generating circuits, a conformal coating, a structural backing, and a power-delivery and control system. The electrostatics field generating circuits are positioned on one side of the primary substrate, and the power delivery and control system is positioned on the other side of the primary substrate. The electrostatics field generating circuits are used to bond the semiconductive coupons/wafers to the apparatus. The structural backing is used to handle the apparatus while transporting the semiconductive coupons/wafers and is also used to protect the power-delivery and control system from physical damage. The conformal coating is superimposed onto the electrostatics field generating circuits and the primary substrate as a means of protection. | 02-27-2014 |
20140063680 | SUBSTRATE FIXING DEVICE AND METHOD FOR MANUFACTURING THE SAME - In a substrate fixing device and a method form manufacturing the substrate fixing device, the substrate fixing device includes a lower electrode, a dielectric layer and a plurality of protrusions. The dielectric layer is disposed on the lower electrode. The protrusions are spaced apart from each other, and are protruded from the dielectric layer. Each of the protrusions includes an insulating layer disposed on the dielectric layer, and an upper layer disposed on the insulating layer and contacting a substrate. | 03-06-2014 |
20140063681 | ELECTROSTATIC CHUCK - To provide an electrostatic chuck, including: a ceramic dielectric substrate having a first major surface on which an object to be processed is mounted, and a second major surface on a side opposite the first major surface, the ceramic dielectric substrate being a polycrystalline ceramic sintered body; and an electrode layer interposed between the first major surface and the second major surface of the ceramic dielectric substrate, the electrode layer being integrally sintered with the ceramic dielectric substrate, the ceramic dielectric substrate including a first dielectric layer between the electrode layer and the first major surface, and a second dielectric layer between the electrode layer and the second major surface, and at least the first dielectric layer of the ceramic dielectric substrate having an infrared spectral transmittance in terms of a thickness of 1 millimeter (mm) of not less than 20%. | 03-06-2014 |
20140063682 | ELECTROSTATIC CHUCK - To provide an electrostatic chuck, including: a ceramic dielectric substrate having a first major surface on which an object to be processed is mounted, and a second major surface on a side opposite the first major surface, the ceramic dielectric substrate being a polycrystalline ceramic sintered body; and an electrode layer interposed between the first major surface and the second major surface of the ceramic dielectric substrate, the electrode layer being integrally sintered with the ceramic dielectric substrate, and the electrode layer includes a first portion having conductivity, and a second portion that bonds the first dielectric layer and the second dielectric layer, and the mean grain size of crystals included in the second portion is smaller than the mean grain size of crystals included in the ceramic dielectric substrate. | 03-06-2014 |
20140071580 | MASS TRANSFER TOOL - Systems and methods for transferring a micro device from a carrier substrate are disclosed. In an embodiment, a mass transfer tool includes an articulating transfer head assembly, a carrier substrate holder, and an actuator assembly to adjust a spatial relationship between the articulating transfer head assembly and the carrier substrate holder. The articulating transfer head assembly may include an electrostatic voltage source connection and a substrate supporting an array of electrostatic transfer heads. | 03-13-2014 |
20140071581 | PORTABLE ELECTROSTATIC CHUCK CARRIER FOR THIN SUBSTRATES - Embodiments of a portable electrostatic chuck for use in a substrate process chamber to support an ultra-thin substrate when disposed thereon are provided herein. In some embodiments, a portable electrostatic chuck may include a carrier comprising a dielectric material; an electrically conductive layer disposed on a top surface of the carrier; a dielectric layer disposed over the electrically conductive layer, such that the electrically conductive layer is disposed between the carrier and the dielectric layer; and at least one conductor coupled to the electrically conductive layer, wherein the portable electrostatic chuck is configured to electrostatically retain the ultra-thin substrate to the portable electrostatic chuck, wherein the portable electrostatic chuck is further configured to be handled and moved by substrate processing equipment outside of the substrate process chamber, and wherein the portable electrostatic chuck is sized to support large ultra-thin substrates. | 03-13-2014 |
20140071582 | ELECTROSTATIC CHUCK - To provide an electrostatic chuck, including: a ceramic dielectric substrate having a first major surface on which an object to be processed is mounted, and a second major surface on a side opposite the first major surface, the ceramic dielectric substrate being a polycrystalline ceramic sintered body; and an electrode layer interposed between the first major surface and the second major surface of the ceramic dielectric substrate, the electrode layer being integrally sintered with the ceramic dielectric substrate, a temperature control plate provided on the second major surface side; and a heater provided between the electrode layer and the temperature control plate, and the first dielectric layer and the second dielectric layer of the ceramic dielectric substrate having an infrared spectral transmittance in terms of a thickness of 1 mm of not less than 20%. | 03-13-2014 |
20140104743 | ELECTROSTATIC CHUCK - Provided is an electrostatic chuck capable of minimizing short circuits of electrodes due to scratches generated on a surface of the electrostatic chuck, and achieving stable absorption. | 04-17-2014 |
20140104744 | Conformable Electroadhesive Gripping System - An electroadhesive surface can include electrodes that are configured to induce an electrostatic attraction with nearby objects upon application of voltage to the electrodes. Systems described herein may also employ a load-bearing frame that is coupled to an electroadhesive gripping surface via an array of height-adjustable pins. Adjusting the pins changes the shape of the gripping surface, and may be used to conform to objects pressed against the gripping surface. Objects pressed against the gripping surface may cause one or more of the pins to retract by sliding within respective channels so as to cause the gripping surface to conform to the object. Some examples further include pin-locking mechanisms configured to secure the position of the pins within their respective channels and thereby fix the shape of the gripping surface after conforming to the object. | 04-17-2014 |
20140133062 | ADDITIONAL FORCE AUGMENTED ELECTROADHESION - An electrostatic device or system includes electrode(s) adapted to produce an electrostatic attraction force and a base surface adapted to facilitate the application of the electrostatic attraction force and also a physical attraction force separate therefrom. The electrostatic and physical attraction forces can maintain a position of the electrostatic device relative to a foreign object via electroadhesion and/or via an additional manner that is separate from the electroadhesion. The physical attraction force can be a vacuum, van der Waals, and/or adhesive force, can be applied at less than all locations across the base surface, and may involve a one-time permanent attachment. The base surface can include a deformable surface portion that moves closer to the foreign object when the electrostatic or physical attraction force is applied. The physical attraction force can be sufficient to adhere the device to the object when the electrostatic attraction force is removed. | 05-15-2014 |
20140146434 | MOUNTING TABLE STRUCTURE AND METHOD OF HOLDING FOCUS RING - A mounting table structure includes a sheet, having thermal conductivity, provided between a focus ring and a base member; a pressing member having a pressing surface that presses the focus ring toward the base member and contact surfaces, facing downward, arranged at a predetermined interval in a circumferential direction thereof; and a supporting member that is connected to the base member and has first and second contact surfaces. Further, the first contact surfaces and the second contact surfaces are arranged at the predetermined interval in the circumferential direction such that the second and first contact surfaces are alternately arranged. Moreover, the first contact surfaces are located at a position different from that of the second contact surfaces in a height direction, and the contact surfaces of the pressing member are protruded at a distance larger than distances of the first and second contact surfaces in the height direction. | 05-29-2014 |
20140177123 | SINGLE-BODY ELECTROSTATIC CHUCK - An electrostatic chuck includes a thermally conductive base having a plurality of heating elements disposed therein. A metal layer covers at least a portion of the thermally conductive base, wherein the metal layer shields the plurality of heating elements from radio frequency (RF) coupling and functions as an electrode for the electrostatic chuck. A plasma resistant dielectric layer covers the metal layer. | 06-26-2014 |
20140204501 | ELECTROSTATIC CHUCKING DEVICE - The electrostatic chucking device | 07-24-2014 |
20140240891 | TECHNIQUES FOR CLAMPING AND DECLAMPING A SUBSTRATE - Methods of clamping and declamping a wafer from a platen are disclosed. The platen comprises one or more electrodes, which are electrically biased to electrostatically clamp the wafer to the platen. The electrode is biased to a first voltage where the wafer may be processed. Thereafter, one or more voltages are subsequently applied to the electrodes. In some embodiments, each subsequent voltage is less than the previously applied voltage. In other embodiments, one or more of the subsequent voltages may be greater than the previously applied voltage. This sequence of voltage may reduce the likelihood that the wafer will stick or adhere to the platen during the removal process. | 08-28-2014 |
20140240892 | ELECTROSTATIC CHUCK, RETICLE, AND ELECTROSTATIC CHUCK METHOD - According to one embodiment, an electrostatic chuck is capable of holding a reticle by electrostatic attraction force. The reticle has a planar external shape of a rectangle or a square. The electrostatic chuck includes: a first attraction unit capable of attracting the reticle by the electrostatic attraction force; and a substrate supporting the first attraction unit. The first attraction unit is symmetrical with respect to a first line when the reticle is attracted to the first attraction unit. The first line crosses two opposing sides of the rectangle or the square. | 08-28-2014 |
20140254061 | ELECTROSTATIC CHUCK APPARATUS - An electrostatic chuck apparatus includes a pedestal part including a side surface, an electrostatic chuck including a side surface and provided on the pedestal part, an adhesive part including a side surface and provided between the pedestal part and the electrostatic chuck, the adhesive part containing a resin adhesive agent that adheres the pedestal part and the electrostatic chuck together, a recess part provided in a portion of the side surface of the pedestal part and a portion of the side surface of the electrostatic chuck, the recess part being provided in an area that includes a side surface of the adhesive part, the recess part being provided along an outer periphery of the pedestal part, an outer periphery of the adhesive part, and an outer periphery of the electrostatic chuck, and a focus ring engaged with the recess part and covering the side surface of the adhesive part. | 09-11-2014 |
20140268478 | METHODS AND APPARATUS FOR ELECTROSTATIC CHUCK REPAIR AND REFURBISHMENT - In one embodiment of the invention, a substrate support assembly comprises an electrostatic chuck having an electrode embedded therein and having an aperture disposed therethrough, a conductive liner disposed on the surface of the electrostatic chuck within the aperture, a conductive tubing extending from a lower surface of the electrostatic chuck and axially aligned with the aperture, and a conductive coating at least partially within the aperture and at least partially within the conductive tubing, wherein the conductive coating provides a conductive path between the conductive liner and the conductive tubing. | 09-18-2014 |
20140268479 | SUBSTRATE SUPPORT CHUCK COOLING FOR DEPOSITION CHAMBER - A substrate support chuck for use in a substrate processing system is provided herein. In some embodiments, a substrate support for use in a substrate processing chamber may include an electrostatic chuck having a top substrate support surface and a bottom surface, and a cooling ring assembly having a central opening disposed proximate the bottom surface of the electrostatic chuck, the cooling ring assembly including, a cooling section having a top surface thermally coupled to the bottom surface of the electrostatic chuck, the cooling section having a cooling channel formed in a bottom surface of the cooling section, and a cap coupled to a bottom surface of the cooling section and fluidly sealing the cooling channel formed in the cooling section. | 09-18-2014 |
20140285943 | CERAMIC MEMBER AND MEMBER FOR SEMICONDUCTOR MANUFACTURING EQUIPMENT | 09-25-2014 |
20140301010 | ELECTROSTATIC CHUCK DEVICE - An electrostatic chuck device is provided in which it is possible to uniformize an in-plane temperature distribution in a placement surface on which a plate-shaped sample such as a wafer is placed and it is possible to improve in-plane uniformity of plasma etching of the plate-shaped sample by uniformizing plasma density on the plate-shaped sample. The electrostatic chuck device includes an electrostatic chuck section that has an upper surface as a placement surface on which a plate-shaped sample is placed, and is made to have an internal electrode for electrostatic adsorption built-in, and a cooling base section that cools the electrostatic chuck section, wherein a heater element ( | 10-09-2014 |
20140334059 | ELECTROSTATIC CHUCK AND SEMICONDUCTOR MANUFACTURING DEVICE - An electrostatic chuck includes a placing stage formed from a ceramic including aluminum oxide and yttrium oxide, and an electrostatic electrode arranged in the placing stage, wherein a content rate of the yttrium oxide is 0.5 wt % to 2.0 wt %. Preferably, the electrostatic chuck is used while being heated at a temperature of 100° C. to 200° C. | 11-13-2014 |
20140334060 | ELECTROSTATIC CHUCK HAVING THERMALLY ISOLATED ZONES WITH MINIMAL CROSSTALK - A substrate support assembly includes a ceramic puck and a thermally conductive base having an upper surface that is bonded to a lower surface of the ceramic puck. The thermally conductive base includes a plurality of thermal zones and a plurality of thermal isolators that extend from the upper surface of the thermally conductive base towards a lower surface of the thermally conductive base, wherein each of the plurality of thermal isolators provides approximate thermal isolation between two of the plurality of thermal zones at the upper surface of the thermally conductive base. | 11-13-2014 |
20140340813 | AC-DRIVEN ELECTROSTATIC CHUCK - According to an aspect of an embodiment of the invention, there is provided an AC-driven electrostatic chuck including: a dielectric substrate including protrusions formed on a major surface on a side of mounting a clamped object, and a bottom surface part formed around the protrusions; and an electrode provided on the dielectric substrate, the electrode including a plurality of electrode elements spaced from each other, the plurality of electrode elements being enabled to be applied with an AC voltage of mutually different phases, respectively, and the protrusions being arranged on the major surface with a prescribed spacing depending on shape of the plurality of electrode elements. The AC-driven electrostatic chuck is capable of suppressing local damage to part of the protrusions provided on the mounting surface side. | 11-20-2014 |
20140355168 | MICRO PICK UP ARRAY WITH COMPLIANT CONTACT - Micro pick up arrays for transferring micro devices from a carrier substrate are disclosed. In an embodiment, a micro pick up array includes a compliant contact for delivering an operating voltage from a voltage source to an array of electrostatic transfer heads. In an embodiment, the compliant contact is moveable relative to a base substrate of the micro pick up array. | 12-04-2014 |
20140355169 | ELECTROSTATIC CHUCK DEVICE - An electrostatic chuck device is provided in which there is no concern that a plate-shaped sample may be deformed when adsorbing the plate-shaped sample or when detaching the plate-shaped sample, the temperature of the plate-shaped sample is uniformized, and particles are not easily produced. | 12-04-2014 |
20140355170 | ELECTROSTATIC CHUCK - An electrostatic chuck includes: a ceramic dielectric substrate having a first major surface and a second major surface; an electrode interposed between the first and second major surfaces; and a connecting part connected to the electrode and including a first region in contact with the electrode, with a first direction being defined as a direction from the first major surface toward the second major surface, and a second direction being defined as a direction orthogonal to the first direction, the first region being configured so that in a cross section of the electrode and the connecting part as viewed in the second direction, an angle on a side of the connecting part between an extension line along outer shape on the side of second major surface of the electrode and a tangential line of outer shape of the connecting part gradually increases in the first direction. | 12-04-2014 |
20140376148 | ELECTROSTATIC CHUCK DEVICE - An electrostatic chuck device includes an electrostatic chuck part that has an upper surface as a placement surface for placing a plate-shaped sample and has an internal electrode for electrostatic attraction built therein; and a cooling base part that cools the electrostatic chuck part. The electrostatic chuck part and the cooling base part are integrally adhered to each other via an adhesive layer. An insulator having a double pipe structure including an insulator and an insulator provided coaxially with an outer peripheral portion of the insulator is provided in a cooling gas hole, formed in the electrostatic chuck part and the cooling base part, so as to cover an exposed surface of the adhesive layer on the cooling gas hole side. | 12-25-2014 |
20150009602 | ELECTROSTATIC CHUCK SYSTEM AND SEMICONDUCTOR FABRICATION DEVICE - An electrostatic chuck system comprising a chuck body | 01-08-2015 |
20150016010 | CARRIER DEVICE AND CERAMIC MEMBER - A ceramic member, in a carrier device, including: a plurality of ceramic layers; a clamping electrode formed on a first ceramic layer among the plurality of ceramic layers and inside of the plurality of ceramic layers, and configured to attract a dielectric material by electrostatic force; an electric heating element formed on a second ceramic layer, which is more distant from a side holding a carried object than the first ceramic layer among the plurality of ceramic layers, and configured to generate heat using electric power; a power feed port; a land formed on a third ceramic layer among the plurality of ceramic layers, and configured to receive electric power through the power feed port; and a via arranged to pass through at least one of the plurality of ceramic layers and provided as a conductive material to electrically connect the electric heating element with the land. | 01-15-2015 |
20150016011 | Electrostatic Check with Multi-Zone Control - An electrostatic chuck for clamping a warped workpiece has a clamping surface comprising a dielectric layer. The dielectric layer has a field and one or more zones formed of differing dielectric materials. One or more electrodes are coupled to a power supply, and a controller controls a clamping voltage supplied to the one or more electrodes via the power supply. An electrostatic attraction force associated with each of the field and one or more zones of the dielectric layer of the electrostatic chuck is induced, wherein the electrostatic attraction force varies based on the dielectric material of each of the field and one or more zones. The electrostatic attraction force is greater in the one or more zones than in the field, therein attracting warped regions of the workpiece to the clamping surface and clamping the warped workpiece to the clamping surface across a surface of the warped workpiece. | 01-15-2015 |
20150022935 | END EFFECTOR FOR TRANSFERRING A SUBSTRATE - Embodiments of the present invention provide an end effector capable of generating an electrostatic chucking force to chuck a substrate disposed therein without damaging the substrate. In one embodiment, an end effector for a robot, the end effector includes a body having an electrostatic chucking force generating assembly, and a mounting end coupled to the body, the mounting end for coupling the body to the robot. | 01-22-2015 |
20150022936 | ELECTROSTATIC CHUCK FOR HIGH TEMPERATURE PROCESS APPLICATIONS - Embodiments of the present invention provide a substrate support assembly including an electrostatic chuck with enhanced heat resistance. In one embodiment, an electrostatic chuck includes a support base, an electrode assembly having interleaved electrode fingers formed therein, and an encapsulating member disposed on the electrode assembly, wherein the encapsulating member is fabricated from one of a ceramic material or glass. | 01-22-2015 |
20150036258 | ELECTROSTATIC CLAMP - An electrostatic clamp configured to, in use, hold an article, such as a reticle or a wafer in a lithographic apparatus. The clamp includes a lower portion; an upper portion formed of a dielectric material, and a plurality of electrodes disposed between the lower portion and the upper portion. The electrodes include a first electrode configured in use to be held at a first voltage, at least one intermediate electrode configured in use to be held at a second voltage, and a ground electrode. The at least one intermediate electrode is located between the first electrode and the ground electrode and the second voltage is between the first voltage and ground to reduce the voltage across a barrier between the electrodes and so reduce the risk of high-voltage breakdown. | 02-05-2015 |
20150036259 | IN-SITU REMOVABLE ELECTROSTATIC CHUCK - Embodiments described herein generally relate to an electrostatic chuck (ESC). The ESC may contain a first plurality of electrodes adapted to electrostatically couple a substrate to the ESC and a second plurality of electrodes adapted to electrostatically couple the ESC to a substrate support. Instead of being integrally disposed within the substrate support, the ESC may be easily removed from the substrate support and removed from a chamber for maintenance or replacement purposes. | 02-05-2015 |
20150036260 | ELECTROSTATIC CARRIER FOR THIN SUBSTRATE HANDLING - Embodiments provided herein generally relate to an electrostatic chuck (ESC). The ESC may comprise a reduced number of stress initiation points, such as holes through the ESC, which may improve the mechanical integrity of the ESC. Electrodes disposed within the ESC may be connected to electrical contacts and a power source via conductive leads, which may be coupled or formed along a peripheral edge of the ESC. Thus, the need for holes formed in the ESC may be reduced or eliminated. In addition, gas channels may be formed on a top surface, a bottom surface, or both. The gas channels may reduce or eliminate the need for a gas channel formed through the ESC and may facilitate heat transfer between a substrate support, the ESC, and a substrate coupled to the ESC. | 02-05-2015 |
20150036261 | COOLING PLATE, METHOD FOR MANUFACTURING THE SAME, AND MEMBER FOR SEMICONDUCTOR MANUFACTURING APPARATUS | 02-05-2015 |
20150043122 | ELECTROSTATIC CHUCK, MOUNT PLATE SUPPORT, AND MANUFACTURING METHOD OF ELECTROSTATIC CHUCK - According to one embodiment, an electrostatic chuck comprises a mount plate, a first layer, and a second layer. The first layer includes a heater. The second layer is provided between the mount plate and the first layer. The second layer transmits heat from the heater to the mount plate. The second layer includes a compressive attachment portion. The compressive attachment portion is formed at the outer edge. The face on the mount plate side of the compressive attachment portion is compressed and attached to the mount plate. The face on the first layer side of the compressive attachment portion is compressed and attached to the first layer. | 02-12-2015 |
20150043123 | LOCALLY HEATED MULTI-ZONE SUBSTRATE SUPPORT - Embodiments of the present disclosure provide an electrostatic chuck (ESC) having azimuthal temperature control. In one embodiment, the electrostatic chuck includes an insulating base, a dielectric layer disposed on the insulating base, the dielectric layer having a substrate supporting surface, an electrode assembly disposed between the insulating base and the substrate supporting surface, and a plurality of heating elements coupled to the insulating base, the heating elements azimuthally control a temperature profile across a substrate surface. | 02-12-2015 |
20150049410 | ELECTROSTATIC CHUCK - The present invention is an electrostatic chuck including a ceramic base body and an adsorption electrode provided inside of or on the lower surface of the ceramic base body and having a portion where a Mn content is 1×10 | 02-19-2015 |
20150049411 | WAFER GROUNDING AND BIASING METHOD, APPARATUS, ANDAPPLICATION - A wafer grounding apparatus and method adaptable to a charged particle beam apparatus is disclosed. A wafer substrate is supported by a wafer mount. A pulse current pin is arranged to be in contact with a backside film formed on a backside of the wafer substrate. A grounding pulse generator provides at least one pulse to drive the pulse current pin such that dielectric breakdown occurring at the backside film leads to establishment of a current path through the backside films. Accordingly, a current flows in the wafer substrate through this current path and then flows out of the wafer substrate via at least one current return path formed from capacitive coupling between the wafer substrate and the wafer mount. | 02-19-2015 |
20150062772 | Barrier Layer For Electrostatic Chucks - An electrostatic chuck for implanting ions at high temperatures is disclosed. The electrostatic chuck includes an insulating base, with electrically conductive electrodes disposed thereon. A dielectric top layer is disposed on the electrodes. A barrier layer is disposed on the dielectric top layer so as to be between the dielectric top layer and the workpiece. This barrier layer serves to inhibit the migration of particles from the dielectric top layer to the workpiece, which is clamped on the chuck. In some embodiments, a protective layer is applied on top of the barrier layer to prevent abrasion. | 03-05-2015 |
20150070814 | ELECTROSTATIC CHUCK WITH VARIABLE PIXILATED HEATING - Electrostatic chucks with variable pixelated heating are described. For example, an electrostatic chuck (ESC) includes a ceramic plate having a front surface and a back surface, the front surface for supporting a wafer or substrate. A base is coupled to the back surface of the ceramic plate. A light carrying medium is disposed in the base, the light carrying medium configured to provide pixelated light-based heating capability for the ESC. | 03-12-2015 |
20150070815 | ELECTROSTATIC CHUCK MEMBER - There is provided an electrostatic chuck member made of a complex oxide sintered body obtained by substituting some of yttrium in yttrium aluminum oxide with a rare earth element (RE) excluding yttrium, in which a ratio [N | 03-12-2015 |
20150077895 | COOLING PLATE, METHOD FOR MANUFACTURING THE SAME, AND MEMBER FOR SEMICONDUCTOR MANUFACTURING APPARATUS | 03-19-2015 |
20150109715 | METHOD FOR FORMING AN ELECTROSTATIC CHUCK USING FILM PRINTING TECHNOLOGY - In one embodiment, a method for forming an electrostatic chuck includes forming vias in a ceramic plate and printing a metal paste in the vias and curing the ceramic plate. The method includes printing the metal paste on a front surface of the ceramic plate and curing the ceramic plate, and printing the metal paste on a bottom surface of the ceramic plate and curing the ceramic plate to form one or more contact pads. The method also includes printing a dielectric film on the front surface of the ceramic plate and curing the ceramic plate. The method may further include printing one or more heating elements on a bottom surface of the ceramic plate and curing the ceramic plate, printing the dielectric film on the bottom, and bonding the ceramic plate to a backing plate. | 04-23-2015 |
20150109716 | PLASMA PROCESSING APPARATUS, POWER SUPPLY UNIT AND MOUNTING TABLE SYSTEM - A plasma processing apparatus includes a mounting table including a lower electrode and an electrostatic chuck, a high frequency power supply electrically connected to the lower electrode, a heater provided in the electrostatic chuck, a heater power supply for supplying a power to the heater, a filter unit including a filter connected to the heater power supply, a rod-shaped power feeder connecting the heater power supply and the heater via the filter, an insulating tubular portion having an inner hole through which the power feeder extends, and a conductive choke portion serving to suppress a microwave propagating through the tubular portion. The choke portion includes a first portion extending from the power feeder in a direction intersecting with a longitudinal direction of the power feeder and a cylindrical second portion extending, between the tubular portion and the power feeder, from a peripheral portion of the first portion. | 04-23-2015 |
20150116889 | ELECTROSTATIC CHUCK AND METHOD OF MANUFACTURING ELECTROSTATIC CHUCK - An electrostatic chuck and a manufacturing method are disclosed in which drawbacks of using an adhesive are not existent and a freedom degree of design is high. The electrostatic chuck includes a substrate part constituting a main chuck body, a first insulating layer of a spray coating formed to the surface of the substrate part, a heater part of an electric conductor formed by applying a conductive paste to the surface of the first insulating layer, a second insulating layer of a spray coating formed to the surface of the first insulating layer so as to cover the heater part, an electrode part formed by thermal spraying to the surface of the second insulating layer and a dielectric layer of a spray coating formed to the surface of the second layer so as to cover the electrode part and lowers a volume resistivity without using an adhesive. | 04-30-2015 |
20150124369 | Electroadhesion Gripper for Retaining Workpieces - An electroadhesion gripper for retaining workpieces includes a first spiral electrode having a plurality of turns and a second spiral electrode having a plurality of turns, the two spiral electrodes being arranged so as to be at least partially bifilar. The electroadhesion gripper has a diode by which the first and second spiral electrodes are connected to each other. Portions of the first and second spiral electrodes are connected in series by the diode, and an entirety of the connected portions of the first and second spiral electrodes has a perceptible inductivity. The gripper is driven with an alternating-current (AC) voltage and an occupation state and wear degree of the gripper can be determined during the AC voltage cycle. | 05-07-2015 |
20150138686 | ACHIEVING UNIFORM CAPACITANCE BETWEEN AN ELECTROSTATIC CHUCK AND A SEMICONDUCTOR WAFER - Embodiments of the present invention provide a method for achieving uniform capacitance between a semiconductor wafer and an electrostatic chuck. In certain embodiments, the method comprises the step of forming a layer on a first side of the semiconductor wafer, wherein the layer has a specified resistivity. The method further comprises placing the semiconductor wafer on the electrostatic chuck, wherein the layer contacts the electrostatic chuck. The method further comprises applying a radio frequency signal to the electrostatic chuck, and processing a second side of the semiconductor wafer. | 05-21-2015 |
20150138687 | CONTROL SYSTEMS EMPLOYING DEFLECTION SENSORS TO CONTROL CLAMPING FORCES APPLIED BY ELECTROSTATIC CHUCKS, AND RELATED METHODS - A control system that includes deflection sensors which can control clamping forces applied by electrostatic chucks, and related methods are disclosed. By using a sensor to determine a deflection of a workpiece supported by an electrostatic chuck, a control system may use the deflection measured to control a clamping force applied to the workpiece by the electrostatic chuck. The control system applies a clamping voltage to the electrostatic chuck so that the clamping force reaches and maintains a target clamping force. In this manner, the clamping force may secure the workpiece to the electrostatic chuck to enable manufacturing operations to be performed while preventing workpiece damage resulting from unnecessary higher values of the clamping force. | 05-21-2015 |
20150138688 | Electrostatic Clamp, Lithographic Apparatus and Method - The present invention provides a method for containing unwanted electric charge that accumulates on the surface of the dielectric of an electrostatic clamp. One source of such charge is found to be from the triple points where conductive interconnect lines | 05-21-2015 |
20150146339 | PAD DESIGN FOR ELECTROSTATIC CHUCK SURFACE - Embodiments are directed to an electrostatic chuck surface having minimum contact area features. More particularly, embodiments of the present invention provide an electrostatic chuck assembly having a pattern of raised, elongated surface features for providing reduced particle generation and reduced wear of substrates and chucking devices. | 05-28-2015 |
20150294790 | CAPACITOR ASSEMBLIES FOR COUPLING RADIO FREQUENCY (RF) AND DIRECT CURRENT (DC) ENERGY TO ONE OR MORE COMMON ELECTRODES - Embodiments of a capacitor assembly for coupling radio frequency (RF) and direct current (DC) power to an electrode and substrate support incorporating same are provided herein. In some embodiments, the capacitor assembly includes a first conductive plate to receive RF power from an RF power source, the first conductive plate including a central bore; at least one capacitor coupled to the first conductive plate and surrounding the central bore; and a second conductive plate electrically coupled to the first conductive plate via the at least one capacitor, the second conductive plate including an input tap to receive DC power from a DC power source and at least one output tap to couple the RF and DC power to an electrode. | 10-15-2015 |
20150294891 | Electrostatic Chuck With Photo-Patternable Soft Protrusion Contact Surface - In accordance with an embodiment of the invention, there is provided a soft protrusion structure for an electrostatic chuck, which offers a non-abrasive contact surface for wafers, workpieces or other substrates, while also having improved manufacturability and compatibility with grounded surface platen designs. The soft protrusion structure comprises a photo-patternable polymer. | 10-15-2015 |
20150295521 | ELECTROSTATIC CHUCK AND POWER SUPPLY SYSTEM - In an electrostatic chuck and a power supply system, high-voltage drive is performed without generating electrical discharge even in a vacuum atmosphere, and a structure of the power supply system for the electrostatic chuck is simplified. This power supply system includes: an electrostatic chuck ( | 10-15-2015 |
20150303092 | DE-CHUCK CONTROL METHOD AND CONTROL DEVICE FOR PLASMA PROCESSING APPARATUS - A de-chuck control method is provided for de-chucking a workpiece from an electrostatic chuck, which includes a chuck electrode and electrostatically attracts the workpiece. The de-chuck control method includes acquiring a time-integration value of a current by measuring the current flowing from the chuck electrode for a predetermined time period after a plasma process is ended and a voltage applied to the chuck electrode is turned off; calculating a difference between the time-integration value of the current and an electric charge charged to the chuck electrode during the plasma process; calculating a counter voltage according to a residual charge of the electrostatic chuck based on the difference and a predetermined correlation between the time-integration value of the current and a torque acting on a support pin for supporting the workpiece; and applying the counter voltage to the chuck electrode while introducing gas into a processing chamber and generating plasma. | 10-22-2015 |
20150315817 | ELECTROSTATIC LOCK - The present invention concerns an electrostatic lock and relates to devices for fixing and holding in a fixed state relative to one another individual parts or elements of various mechanisms and devices with the possibility of the subsequent disengagement thereof, and functions by means of the electrostatic (Coulomb) force of attraction between electrodes charged with opposite electrical charges and separated by a sufficiently thin layer of dielectric material. The technical result of the present invention is the guaranteed fixing of the elements of the electrostatic lock upon closing. The primary technical solution of the present invention is the inclusion of electric valves (rectifiers) in the power supply circuit of the electrostatic lock, said valves (rectifiers) stabilizing the process of electric charge accumulation on the electrodes of the electrostatic lock and guaranteeing the closing thereof. | 11-05-2015 |
20150318199 | THIN SUBSTRATE ELECTROSTATIC CHUCK SYSTEM AND METHOD - In various aspects of the disclosure, a semiconductor substrate processing system may include an electrostatic chuck for holding a semiconductor substrate attached to an electrically insulating carrier; and an AC power supply electrically coupled to the electrostatic chuck. | 11-05-2015 |
20150325464 | SYSTEM AND APPARATUS FOR HOLDING A SUBSTRATE OVER WIDE TEMPERATURE RANGE - An apparatus to support a substrate may include a base, a clamp portion to apply a clamping voltage to the substrate, and a displacement assembly configured to hold the clamp portion and base together in a first operating position, and to move the clamp portion with respect to the base from the first operating position to a second operating position, wherein the clamp portion and base are separate from one another in the second operating position. | 11-12-2015 |
20150332951 | Wafer Releasing - Embodiments of the present invention provide a chuck system for handling a wafer that comprises a first and a second main surface. The chuck system includes a chuck configured to hold the wafer at the second main surface facing the chuck and a release device. The chuck system further includes an actuator configured to lift the release device away from the chuck. The release device is configured such that the release device mechanically engages with the wafer at an edge portion of the second main surface of the wafer when being lifted, thereby releasing the wafer from the chuck. | 11-19-2015 |
20150340262 | MASS TRANSFER SYSTEM - Micro pick up arrays for transferring micro devices from a carrier substrate are disclosed. In an embodiment, a micro pick up array includes a compliant contact for delivering an operating voltage from a voltage source to an array of electrostatic transfer heads. In an embodiment, the compliant contact is moveable relative to a base substrate of the micro pick up array. | 11-26-2015 |
20150348815 | CLAMP WITH ELECTRODE CARRIER DISK - A holding apparatus ( | 12-03-2015 |
20150348816 | METHOD FOR PRODUCING AN ELECTROSTATIC HOLDING APPARATUS - Production of a holding apparatus ( | 12-03-2015 |
20150349668 | ELECTROSTATIC ATTRACTION APPARATUS, ELECTROSTATIC CHUCK AND COOLING TREATMENT APPARATUS - Provided is an electrostatic attraction apparatus in which a first insulating layer is formed on a base in an electrostatic chuck. A first portion of the first insulating layer extends on a first face of the base and a second portion of the first insulating layer extends on at least a portion of a second face of the base. An attraction electrode is formed on the first portion of the first insulating layer. A second insulating layer is formed on the first portion of the first insulating layer and the attraction electrode. A conductor pattern extends from the attraction electrode and provides a power supply terminal on the second portion of the first insulating layer. A contact part of a terminal member urged by an urging unit is in contact with the power supply terminal. The terminal member is connected with a wiring line connected to a supply power. | 12-03-2015 |
20150349669 | CLAMP WITH CERAMIC ELECTRODE - A holding apparatus ( | 12-03-2015 |
20150349670 | CLAMP WITH BURLS-ELECTRODE - Holding apparatus ( | 12-03-2015 |
20150357220 | ATTACHMENT MEMBER AND ATTACHMENT DEVICE USING THE SAME - An attachment member ( | 12-10-2015 |
20150357222 | COOLING PROCESSING APPARATUS AND METHOD FOR OPERATING THE SAME - A cooling processing apparatus includes: a processing vessel; an electrostatic chuck installed in the processing vessel, the electrostatic chuck having a mounting surface on which an object to be processed is mounted; a cooling mechanism configured to cool the electrostatic chuck; and a lamp heating device configured to remove moisture attached to the mounting surface. Further, a method for operating the cooling processing apparatus includes: decompressing the space in the processing vessel by using the exhaust device; removing the moisture attached to the mounting surface of the electrostatic chuck by using the lamp heating device; and cooling the electrostatic chuck by using the cooling mechanism after the removal of the moisture performed by the lamp heating device is terminated. | 12-10-2015 |
20150371885 | TRAY AND WAFER HOLDING APPARATUS - A tray includes a support base having both a first face on which a clamp object is placed and a second face opposite the first face, an upper electrode embedded in the support base and situated toward the first face, a lower electrode embedded in the support base and situated further toward the second face than the upper electrode is, and one or more interconnect lines configured to provide an electrical connection between the upper electrode and the lower electrode. | 12-24-2015 |
20160001449 | COMPOSITE END EFFECTOR AND METHOD OF MAKING A COMPOSITE END EFFECTOR - A composite end effector including a lower sandwich panel having a first side and a second side opposite the first side, an upper sandwich panel having a first side and a second side opposite the first side, wherein the first side of the upper sandwich panel is bonded to the first side of the lower sandwich panel, and an intermediate element disposed between the second side of the lower sandwich panel and the second side of the upper sandwich panel. The intermediate element may include an electrical conductor, wherein an electrostatic chuck is electrically coupled to the electrical conductor through an aperture in the upper sandwich panel. Alternatively or additionally, the intermediate element may include a pair of optical fibers disposed within a pair of channels formed in at least one of the first side of the upper sandwich panel and the first side of the lower sandwich panel. | 01-07-2016 |
20160001450 | MASS TRANSFER TOOL - Systems and methods for transferring a micro device from a carrier substrate are disclosed. In an embodiment, a mass transfer tool includes an articulating transfer head assembly, a carrier substrate holder, and an actuator assembly to adjust a spatial relationship between the articulating transfer head assembly and the carrier substrate holder. The articulating transfer head assembly may include an electrostatic voltage source connection and a substrate supporting an array of electrostatic transfer heads. | 01-07-2016 |
20160005639 | SAMPLE HOLDER - A sample holder includes a substrate composed of ceramics, having a sample holding surface provided in an upper face thereof; a supporting member composed of metal, an upper face of the supporting member covering a lower face of the substrate; and a joining layer composed of indium or an indium alloy, the substrate and the supporting member being joined to each other via the joining layer. The joining layer has a layer region in at least one of a joining surface to the substrate and a joining surface to the supporting member, a content percentage of indium oxides of the layer region being higher than that of an intermediate region in a thickness direction of the joining layer. | 01-07-2016 |
20160020128 | WAFER CHUCK - A wafer chuck is provided. The wafer chuck includes a main body and a dielectric layer disposed over the main body. The wafer chuck also includes an electrode embedded in the dielectric layer and configured to generate an electrostatic field for retaining a wafer. The wafer chuck further includes a thermal conductive layer embedded in the main body or the dielectric layer. The thermal conductive layer has a lateral thermal conductivity greater than a vertical thermal conductivity. | 01-21-2016 |
20160035602 | METHOD OF FORMING A COMPOSITE SUBSTRATE FOR LAYERED HEATERS - A method of forming a heater assembly for use in semiconductor processing includes thermally securing a heater substrate to an application substrate; and applying a layered heater having at least one functional layer to the heater substrate after the heater substrate is secured to the application substrate. The heater substrate defines a material having a coefficient of thermal expansion that is matched to a coefficient of thermal expansion of the functional layer. The material of the functional layer is not capable of withstanding the elevated temperature of the thermal securing step. | 02-04-2016 |
20160035611 | CARRIER WAFER, METHOD FOR HOLDING A FLEXIBLE SUBSTRATE AND METHOD FOR THE MANUFACTURE OF A CARRIER WAFER - Carrier wafers are used to hold thin and ultra-thin substrates such as semiconductor components, for example. The carrier wafer of the invention has a plurality of electrodes insulated on all sides (floating electrodes). This plurality of floating electrodes, but at least 50 floating electrodes, are located next to one another with reference to the plane of the first surface of the carrier wafer. Each of these floating electrodes can be charged, for example by means of Fowler-Nordheim tunnels or by the injection of hot charge carriers, in particular of hot electrons or hot holes. Also provided are a method for holding a flexible substrate by means of a carrier wafer of this type and a method for the manufacture of a carrier wafer of this type. | 02-04-2016 |
20160036355 | ELECTROSTATIC CHUCK DEVICE - Provided is an electrostatic chuck device in which the attachment of particles to the rear surface of a plate-like specimen can be further suppressed by suppressing the generation source of the particles and, furthermore, an effect of cooling the plate-like specimen using a cooling gas can be improved. The electrostatic chuck device is formed by including an electrostatic chuck portion in which an upper surface ( | 02-04-2016 |
20160049323 | METHOD AND APPARATUS OF PROCESSING WAFERS WITH COMPRESSIVE OR TENSILE STRESS AT ELEVATED TEMPERATURES IN A PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION SYSTEM - Embodiments of the present disclosure provide an electrostatic chuck for maintaining a flatness of a substrate being processed in a plasma reactor at high temperatures. In one embodiment, the electrostatic chuck comprises a chuck body coupled to a support stem, the chuck body having a substrate supporting surface, and the chuck body has a volume resistivity value of about 1×10 | 02-18-2016 |
20160056734 | CONFORMABLE ELECTROADHESIVE HOLDING DEVICE - A gripping device is described, and includes a holder including a base and a conformable jamming element having an electroadhesive element on a surface thereof and a controllable voltage source that is electrically connected to the electroadhesive element. | 02-25-2016 |
20160071755 | ELECTROSTATIC CHUCK ASSEMBLIES CAPABLE OF BIDIRECTIONAL FLOW OF COOLANT AND SEMICONDUCTOR FABRICATING APPARATUS HAVING THE SAME - An electrostatic chuck assembly, including an electrostatic chuck on which a substrate is loaded; a channel that provides a flow passage for coolant in the electrostatic chuck, the channel having a first opening at a first end corresponding to a center of the substrate and a second opening at a second end corresponding to an edge of the substrate; and a valve box to control a flow direction of the coolant in the channel, the valve box including a first supply valve to control an introduction of the coolant into the first opening; a first return valve to control a drainage of the coolant from the second opening; a second supply valve to control an introduction of the coolant into the second opening; and a second return valve to control a drainage of the coolant from the first opening. | 03-10-2016 |
20160075036 | SOFT ROBOTIC ACTUATOR ATTACHMENT HUB AND GRASPER ASSEMBLY, REINFORCED ACTUATORS, AND ELECTROADHESIVE ACTUATORS - A hub assembly for coupling different grasper assemblies including a soft actuator in various configurations to a mechanical robotic components are described. Further described are soft actuators having various reinforcement. Further described are and soft actuators having electroadhesive pads for improved grip, and/or embedded electromagnets for interacting with complementary surfaces on the object being gripped. Still further described are soft actuators having reinforcement mechanisms for reducing or eliminating bowing in a strain limiting layer, or for reinforcing accordion troughs in the soft actuator body. | 03-17-2016 |
20160079106 | SEMICONDUCTOR MANUFACTURING APPARATUS, CONTROL METHOD OF ELECTROSTATIC CHUCK, AND ELECTROSTATIC CHUCK DEVICE - According to one embodiment, a semiconductor manufacturing apparatus comprises an electrostatic chuck and a control unit. The electrostatic chuck includes an electrode. The electrode generates electrostatic force. A work is mounted onto the electrostatic chuck. The work is attracted and stuck to the electrostatic chuck by the electrostatic force. The control unit controls a voltage supplied to the electrode. The control unit adjusts the voltage according to change in attractive force on the work to the electrostatic chuck associated with mounting works onto the electrostatic chuck and processing the works. | 03-17-2016 |
20160086837 | COMPLIANT BIPOLAR MICRO DEVICE TRANSFER HEAD WITH SILICON ELECTRODES - A compliant bipolar micro device transfer head array and method of forming a compliant bipolar micro device transfer array from an SOI substrate are described. In an embodiment, a compliant bipolar micro device transfer head array includes a base substrate and a patterned silicon layer over the base substrate. The patterned silicon layer may include first and second silicon interconnects, and first and second arrays of silicon electrodes electrically connected with the first and second silicon interconnects and deflectable into one or more cavities between the base substrate and the silicon electrodes. | 03-24-2016 |
20160087557 | SYSTEM AND METHOD FOR ELECTROSTATIC CLAMPING OF WORKPIECES - A system and method for clamping a workpiece to an electrostatic clamp (ESC) comprises placing a first workpiece on a surface of the ESC and applying a first set of clamping parameters to the ESC, therein clamping the first workpiece to the surface of the ESC with a first clamping force. A degree of clamping of the workpiece to the ESC is determined and the application of the first set of clamping parameters to the ESC is halted based on a process recipe. A second set of clamping parameters is applied to the ESC after halting the application of the first set of clamping parameters to the ESC, and the workpiece is removed from the surface of the ESC concurrent with the application of the second set of clamping parameters to the ESC when the degree of clamping of the workpiece to the ESC is less than or approximately equal to a threshold clamping value. The second set of clamping parameters to the ESC is further halted after removing the workpiece from the surface of the ESC. | 03-24-2016 |
20160094160 | COMPLIANT ELECTROSTATIC TRANSFER HEAD WITH DEFINED CAVITY - A compliant electrostatic transfer head and method of forming a compliant electrostatic transfer head are described. In an embodiment, a compliant electrostatic transfer head includes a base substrate, a cavity template layer on the base substrate, a first confinement layer between the base substrate and the cavity template layer, and a patterned device layer on the cavity template layer. The patterned device layer includes an electrode that is deflectable toward a cavity in the cavity template layer. In an embodiment, a second confinement layer is between the cavity template layer and the patterned device layer. | 03-31-2016 |
20160094161 | MICRO PICK UP ARRAY PIVOT MOUNT DESIGN FOR STRAIN AMPLIFICATION - Systems and methods for aligning a transfer head assembly with a substrate are disclosed. In an embodiment a pivot mount is used for generating a feedback signal in a closed-loop motion control system. In an embodiment, the pivot mount includes primary spring arms and secondary spring arms extending between a pivot platform and a base of the pivot mount. The secondary spring arms are characterized by a lower stiffness than the primary spring arms, and strain sensing elements are located along the secondary spring arms. | 03-31-2016 |
20160111315 | ELECTROSTATIC CHUCK ASSEMBLY FOR HIGH TEMPERATURE PROCESSES - An electrostatic chuck assembly includes a puck and a cooling plate. The puck includes an electrically insulative upper puck plate comprising one or more heating elements and one or more electrodes to electrostatically secure a substrate and further includes a lower puck plate bonded to the upper puck plate by a metal bond, the lower puck plate comprising a plurality of features distributed over a bottom side of the lower puck plate at a plurality of different distances from a center of the lower puck plate, wherein each of the plurality of features accommodates one of a plurality of fasteners. The cooling plate is coupled to the puck by the plurality of fasteners, wherein the plurality of fasteners each apply an approximately equal fastening force to couple the cooling plate to the puck. | 04-21-2016 |
20160118284 | PLASMA PROCESSING APPARATUS - A plasma processing apparatus includes: a vessel which includes a reaction chamber, atmosphere within the reaction chamber capable of being depressurized; a lower electrode which supports an object to be processed within the reaction chamber; a dielectric member which comprises a first surface and a second surface opposite to the first surface, and which closes an opening of the vessel such that the first surface opposes an outside of the reaction chamber and the second surface opposes the object to be processed; and a coil which opposes the first surface of the dielectric member, and which generates plasma within the reaction chamber. An electrode pattern and an insulation film which covers the electrode pattern are formed on the second surface of the dielectric member. | 04-28-2016 |
20160118285 | ELECTROSTATIC CHUCK AND BASE MEMBER FOR USE IN THE SAME - An electrostatic chuck includes a base member and an electrostatic chuck substrate. The base member includes a cooling path. The electrostatic chuck substrate is connected to an upper surface of the base member through an adhesive layer so as to attract a substrate to be mounted. The cooling path includes an introduction portion, a discharge portion and a conduit. The cooling medium is introduced from an outside of the base member to the introduction portion. The cooling medium is discharged from the discharge portion. The conduit includes a start end portion communicating with the introduction portion and a final end portion communicating with the discharge portion. The introduction portion is inclined toward a lower surface of the base member and at a predetermined angle with respect to an axis perpendicular to the upper surface. The introduction portion extends from the lower surface toward the start end portion. | 04-28-2016 |
20160148828 | DETACHABLE HIGH-TEMPERATURE ELECTROSTATIC CHUCK ASSEMBLY - A detachable high-temperature electrostatic chuck assembly including a chuck body for supporting a substrate, an interface plate coupled to the chuck body by a sealing ring, the sealing ring defining a pocket between the chuck body and the interface plate that is sealed from a surrounding vacuum environment, and a cooling plate disposed between the chuck body and the interface plate. An interface between the chuck body and the cooling plate is located within the pocket. | 05-26-2016 |
20160155655 | SAMPLE HOLDER | 06-02-2016 |
20160172227 | ELECTROSTATIC CHUCK DESIGN FOR HIGH TEMPERATURE RF APPLICATIONS | 06-16-2016 |
20160181136 | PACKAGING APPARATUS AND PACKAGING DEVICE | 06-23-2016 |
20160186464 | ELECTROSTATIC LOCK - The electrostatic lock (ESL) relates to devices for fixing separate parts or elements of various mechanisms and devices and for keeping same in a fixed state relative to one another, with the possibility of subsequent converse disengagement thereof, and functions on the basis of an electrostatic (coulomb) attractive force between electrodes which are charged with opposite electrical charges and are separated by a sufficiently narrow layer of a dielectric. The ESL is supplemented with a special blocking mechanism consisting of two main mechanically separable parts, one of which is a blockable part, and the other is a reciprocal part thereto. Furthermore, the ESL electrodes are arranged compactly on the reciprocal blocking part with the aid of a kinematic connection, which makes it possible to completely isolate the electrodes from a contaminant and from other harmful effects of the environment, which may make it impossible for the ESL to work. | 06-30-2016 |
20160189994 | ELECTROSTATIC CHUCKING METHOD AND SUBSTRATE PROCESSING APPARATUS - An electrostatic chucking method uses a substrate processing apparatus including an electrostatic chuck, a focus ring, a supply unit configured to supply a heat transfer medium to a space formed between the focus ring and the electrostatic chuck, and a plurality of electrodes provided at a region in the electrostatic chuck which corresponds to the focus ring. The electrostatic chucking method includes supplying by the supply unit the heat transfer medium to the space for a plasma processing period for which a plasma for processing the substrate is generated, and applying different voltages to the plurality of electrodes to attract and hold the focus ring on the electrostatic chuck for a period other than the plasma processing period. | 06-30-2016 |
20160196996 | ADSORPTION DEVICE AND CONTROL METHOD THEREOF | 07-07-2016 |
20160196997 | SUBSTRATE CARRIER WITH INTEGRATED ELECTROSTATIC CHUCK | 07-07-2016 |
20160196998 | MICRO DEVICE TRANSFER HEAD ARRAY | 07-07-2016 |
20160196999 | WAFER HOLDER AND METHOD FOR MANUFACTURING THE SAME | 07-07-2016 |
20160251265 | CORROSION-RESISTANT MEMBER AND ELECTROSTATIC CHUCK DEVICE | 09-01-2016 |
20160379853 | Electrostatic Chuck With LED Heating - An electrostatic chuck with LED heating is disclosed. The electrostatic chuck with LED heating comprises a first subassembly, which comprises a LED heater, and a second subassembly, which comprises an electrostatic chuck. The LED substrate heater subassembly includes a base having a recessed portion. A plurality of light emitting diodes (LEDs) is disposed within the recessed portion. The LEDs may be GaN or GaP LEDs, which emit light at a wavelength which is readily absorbed by silicon, thus efficiently and quickly heating the substrate. The second subassembly, which comprises an electrostatic chuck, is disposed on the LED substrate heater subassembly. The electrostatic chuck includes a top dielectric layer and an interior layer that are transparent at the wavelength emitted by the LEDs. One or more electrodes are disposed between the top dielectric layer and the interior layer to create the electrostatic force. | 12-29-2016 |
20160379861 | Thermal Shield For Electrostatic Chuck - A thermal shield is disclosed that may be disposed between a heated electrostatic chuck and a base. The thermal shield comprises a thermal insulator, such as a polyimide film, having a thickness of between 1 and 5 mils. The polyimide film is coated on one side with a layer of reflective material, such as aluminum. The layer of reflective material may be between 30 and 100 nanometers. The thermal shield is disposed such that the layer of reflective material is closer to the chuck. Because of the thinness of the layer of reflective material, the thermal shield does not retain a significant amount of heat. Further, the temperature of the thermal shield remains far below the glass transition temperature of the polyimide film. | 12-29-2016 |
20170236740 | PATTERNED CHUCK FOR SUBSTRATE PROCESSING | 08-17-2017 |
20190148203 | METHOD AND APPARATUS FOR LITHOGRAPHY IN SEMICONDUCTOR FABRICATION | 05-16-2019 |
20190148208 | PATTERNED CHUCK FOR DOUBLE-SIDED PROCESSING | 05-16-2019 |
20220139680 | SUBSTRATE PROCESSING APPARATUS AND METHOD OF FABRICATING SAME - A substrate processing apparatus and a method of fabricating the same are proposed. A bonding layer, by which a chuck body and a base plate of an electrostatic chuck device are bonded, is completely covered using a double-sealing structure in which a covering member for preventing a processing gas from infiltrating into the bonding layer and a sealing member for preventing the bonding layer from being damaged are bonded to each other. The durability and the efficiency of the operation of the electrostatic chuck device are improved. | 05-05-2022 |
20220139681 | CHUCK FOR PLASMA PROCESSING CHAMBER - An electrostatic chuck system for a plasma processing chamber is provided. A base plate comprising Al—SiC is provided. A ceramic plate is disposed over the base plate. A bonding layer bonds the ceramic plate to the base plate. | 05-05-2022 |