Class / Patent application number | Description | Number of patent applications / Date published |
361321500 | Composition | 35 |
20080239627 | High-Temperature Dielectric Materials and Capacitors Made Therefrom - A ceramic dielectric composition suitable for preparing capacitors for use in high-temperature service conditions is disclosed. The ceramic material and capacitors made from it exhibit unique and heretofore unrealizable properties including low variation in capacitance with voltage up to high fields, low variation in capacitance with temperature over a broad temperature range, retained high permittivity at temperatures up to 200° C. and beyond, low loss, low field-induced strain and adequate capacitance to retain performance at very low service temperatures. The material is based on sodium bismuth titanate (NBT) with selected additions of substituents and dopants to broaden and flatten its dielectric response, lower loss, lower strain, lower voltage coefficient and increase resistivity. | 10-02-2008 |
20080297979 | Dielectric ceramic composition and electronic device - A dielectric ceramic composition comprising Ba | 12-04-2008 |
20090009927 | CERAMIC ELECTRONIC COMPONENT - A ceramic electronic component includes a ceramic body and an internal electrode layers disposed within the ceramic body. The ceramic body is covered with a diffusion layer, wherein said diffusion layer is an oxide layer into which at least a part of elements contained in the ceramic body are diffused and is located closer to a surface of the ceramic body than an outermost internal electrode layer. | 01-08-2009 |
20090021889 | INSULATOR FILM, CAPACITOR ELEMENT, DRAM AND SEMICONDUCTOR DEVICE - The insulator film of the present invention is suited for use as the insulator material of capacitor elements composing DRAM, is used as the insulator layer of a capacitor element provided with an insulator layer that is interposed between an upper electrode and a lower electrode, and is composed of titanium dioxide to which at least one element from among the lanthanoid elements, Hf and Y is added. | 01-22-2009 |
20090073636 | POLYMER-CERAMIC COMPOSITES WITH EXCELLENT TCC - Polymer-ceramic composite materials for use in the formation of capacitors, which materials exhibit very low changes in temperature coefficient of capacitance (TCC) in response to changes in temperature within the range of from about −55° C. to about 125° C. Specifically, these capacitor materials have a change in TCC ranging from about −5 % to about +5 %, in response to changes in temperature within the desired temperature range. The inventive composite materials comprise a blend of a polymer component and ferroelectric ceramic particles, wherein the polymer component includes at least one epoxy-containing polymer, and at least one polymer having epoxy-reactive groups. The inventive polymer-ceramic composite materials have excellent mechanical properties such as improved peel strength and lack of brittleness, electrical properties such as high dielectric constant, and improved processing characteristics. | 03-19-2009 |
20090086407 | Dielectric ceramic composition and electronic device - A dielectric ceramic composition of the invention comprises: BaTiO | 04-02-2009 |
20090161294 | Multi-band front end module - A multi-band front end module and a method of manufacturing the multi-band front end module. The method may include forming a first circuit pattern on one side of an insulation layer, stacking a dielectric layer over the one side of the insulation layer, and forming a second circuit pattern on the dielectric layer in correspondence with the first circuit pattern such that at least one of a capacitor and an inductor is implemented. An embodiment of the invention allows the positioning of various passive elements while maintaining a compact size for the multi-band front end module. | 06-25-2009 |
20090207555 | ANTIFERROELECTRIC MULTILAYER CERAMIC CAPACITOR - An antiferroelectric ceramic material that can be formed into a multilayer capacitor is disclosed. The antiferroelectric ceramic material is selected from the Pb(Sn, Zr, Ti)O3 (PSnZT) composition family. | 08-20-2009 |
20090207556 | DIELECTRIC CERAMIC AND CAPACITOR - The invention relates to a ceramic dielectric material and to capacitors including the ceramic dielectric material. The ceramic dielectric material of the invention exhibits a high relative dielectric constant and a stable temperature characteristic of the relative dielectric constant. | 08-20-2009 |
20090219671 | COATING SOLUTION FOR FORMING HIGH DIELECTRIC CONSTANT THIN FILM AND METHOD FOR FORMING DIELECTRIC THIN FILM USING THE SAME - Disclosed herein are a coating solution for the formation of a dielectric thin film and a method for the formation of a dielectric thin film using the coating solution. The coating solution comprises a titanium alkoxide, a β-diketone or its derivative, and a benzoic acid derivative having an electron donating group. The method comprises spin coating the coating solution on a substrate to form a thin film and drying the thin film at a low temperature to crystallize the thin film. The titanium-containing coating solution is highly stable. In addition, the coating solution enables formation of a thin film, regardless of the kind of substrates, and can be used to form dielectric thin films in an in-line mode in the production processes of PCBs. | 09-03-2009 |
20090303657 | CRYSTALLOGRAPHICALLY ORIENTATED TANTALUM PENTOXIDE AND METHODS OF MAKING SAME - Methods of forming an oxide are disclosed and include contacting a ruthenium-containing material with a tantalum-containing precursor and contacting the ruthenium-containing material with a vapor that includes water and optionally molecular hydrogen (H | 12-10-2009 |
20100142120 | DIELECTRIC CERAMIC AND CAPACITOR - A dielectric ceramic includes crystal grains containing barium titanate as a main component, magnesium, a rare-earth element, and manganese, wherein the crystal grains have a cubic crystal structure; and the dielectric ceramic contains, per mole of barium, 0.033 to 0.085 mol of magnesium in terms of MgO, 0.1 to 0.2 mol of the rare-earth element (RE) in terms of RE | 06-10-2010 |
20100208411 | Co-Doped Nickel Oxide - A nickel oxide co-doped with a first alkali metal dopant and a second metal dopant selected from the group consisting of at least one of tin, antimony, indium, tungsten, iridium, scandium, gallium, vanadium, chromium, gold, yttrium, lanthanum, ruthenium, rhodium, molybdenum, and niobium. | 08-19-2010 |
20100232087 | COMPLEX OXIDE FILM AND METHOD FOR PRODUCING SAME, COMPOSITE BODY AND METHOD FOR PRODUCING SAME, DIELECTRIC MATERIAL, PIEZOELECTRIC MATERIAL, CAPACITOR AND ELECTRONIC DEVICE - The invention aims at providing a complex oxide film having a high relative dielectric constant and capacitance having low temperature-dependency, whose film thickness can be arbitrarily controlled, and a manufacturing method thereof, a composite body comprising the complex oxide film and a manufacturing method thereof, a dielectric or piezoelectric material comprising the complex oxide film or composite body, a capacitor or piezoelectric element comprising the complex oxide film having the complex oxide film with low temperature-dependency, and an electronic device equipped with the same, without involving any complicated or large scale equipment. The complex oxide film containing titanium element and calcium element can be obtained by forming a metal oxide film containing titanium element on substrate surface and then allowing a solution containing calcium ion to react with the metal oxide layer. A capacitor including the complex oxide film as dielectric material and a piezoelectric element including it as piezoelectric material can be produced. | 09-16-2010 |
20100265632 | THIN-FILM CAPACITOR AND ELECTRONIC CIRCUIT BOARD - The present invention provides a thin-film capacitor having an insulation resistance value higher than that conventionally available and high reliability. The thin-film capacitor of the present invention comprises a dielectric thin film and electrodes opposing each other through the dielectric thin film interposed therebetween; wherein the dielectric thin film contains a perovskite-type composite oxide having a composition expressed by the following chemical formula (1), Mn, and at least one kind of element M selected from the group consisting of V, Nb, and Ta; wherein the dielectric thin film has an Mn content of 0.05 to 0.45 mol with respect to 100 mol of the composite oxide; and wherein the dielectric thin film has a total element M content of 0.05 to 0.5 mol with respect to 100 mol of the composite oxide: | 10-21-2010 |
20100328844 | DIELECTRIC CERAMIC AND MANUFACTURING METHOD THEREFOR AND LAMINATED CERAMIC CAPACITOR - A laminated ceramic capacitor is provided which is excellent in reliability even when its dielectric ceramic layers thinned. For a dielectric ceramic in a laminated ceramic capacitor, a ceramic is used which includes a main component containing a barium titanate based composite oxide represented by the general formula: (Ba | 12-30-2010 |
20110051315 | NANOSTRUCTURED DIELECTRIC MATERIALS FOR HIGH ENERGY DENSITY MULTI LAYER CERAMIC CAPACITORS - A high energy density multilayer ceramic capacitor, having at least two electrode layers and at least one substantially dense polycrystalline dielectric layer positioned therebetween. The at polycrystalline dielectric layer has an average grain size of less than about 300 nanometers, a particle size distribution of between about 150 nanometers and about 3 micrometers, and a maximum porosity of about 1 percent. The dielectric layer is selected from the group including TiO | 03-03-2011 |
20110058305 | Capacitor and High Frequency Component - The invention relates to reducing the leakage current and insulation breakdown in a dielectric film stepped portion caused by a surface roughness of a dielectric film, and to enhancing insulation of a variable capacitor. A lower electrode layer ( | 03-10-2011 |
20110110018 | HEXAGONAL TYPE BARIUM TITANATE POWDER, PRODUCING METHOD THEREOF, DIELECTRIC CERAMIC COMPOSITION AND ELECTRONIC COMPONENT - Dielectric ceramic composition includes a hexagonal type barium titanate as a main component shown by a generic formula (Ba | 05-12-2011 |
20110128670 | HIGH DIELECTRIC CONSTANT CERAMIC-POLYMER COMPOSITES, EMBEDDED CAPACITORS USING THE SAME, AND FABRICATION METHOD THEREOF - Disclosed are ceramic-polymer composite consisting of aggregates of dielectric ceramic particles and polymer resin, and a fabrication method thereof, the method including aggregating dielectric ceramic particles to create aggregates, melting polymer resin in a solvent to prepare a polymer solution, dispersing the aggregates in the polymer solution to prepare a mixed solution, and hardening the mixed solution to obtain ceramic-polymer composites. | 06-02-2011 |
20110216473 | DIELECTRIC CERAMIC COMPOSITION AND CERAMIC ELECTRONIC COMPONENT - A dielectric ceramic composition includes a compound having perovskite type crystal structure shown by a general formula ABO | 09-08-2011 |
20110222205 | DIELECTRIC CERAMIC AND LAMINATED CERAMIC CAPACITOR - A dielectric ceramic (and capacitor containing it) balancing high temperature load characteristics and temperature characteristics of capacitance even when layer thickness is less than 1 μmhas a mixture of different crystal grains containing a barium titanate compound as the main constituent. The first crystal grains can contain rare earth element solid solution region lat the surface layer section. The second crystal grains have a core-shell structure including a shell section having a rare earth element solid solution present. The first and second crystal grains are 12% to 84% f and 16% to 88%, respectively, of the total number of crystal grains. | 09-15-2011 |
20110222206 | DIELECTRIC CERAMIC COMPOSITION AND CERAMIC ELECTRONIC COMPONENT - A dielectric ceramic composition includes, as a main component, a compound having perovskite type crystal structure shown by a general formula ABO | 09-15-2011 |
20110286146 | DIELECTRIC CERAMIC COMPOSITION AND CERAMIC ELECTRONIC COMPONENT - A dielectric ceramic composition includes BaTiO | 11-24-2011 |
20110317329 | CAPACITOR AND METHOD OF MAKING SAME - A capacitor having a dielectric consisting of a glass layer with an alkali metal oxide content of at most 2 wt % and a thickness of at most 50 μm is provided. The capacitor includes at least two metal layers which are separated by the glass layer. The glass layer is preferably produced by a down-draw method or by an overflow down-draw fusion method. | 12-29-2011 |
20120063056 | Dielectric Ceramic Composition and Ceramic Electronic Component - A dielectric ceramic composition includes a compound having perovskite type crystal structure shown by a general formula ABO | 03-15-2012 |
20120176726 | NANOCRYSTALLINE MATERIALS FOR ELECTRONIC APPLICATIONS - Dielectric materials comprising nanocrystalline or nanoparticulate metal oxides or metal carbonates having enhanced dielectric constant values are provided. Specifically, the dielectric materials exhibit high dielectric constant values at low frequencies approaching the DC limit. The dielectric materials also exhibit low dielectric loss factors and high voltage breakdown limits making them well suited for use in capacitors, particularly high energy density capacitors. | 07-12-2012 |
20120250222 | ANTI-REDUCTIVE HIGH-FREQUENCY CERAMIC DIELECTRIC MATERIAL SINTERED AT LOW TEMPERATURE AND MATCHED WITH COPPER INTERNAL ELECTRODE - Provided is an anti-reductive high-frequency ceramic dielectric material sintered at low temperature and matched with copper internal electrode, which can be used for producing multi-layer ceramic capacitor with a copper internal electrode. The ceramic dielectric material consists of main crystalline phase, modifying additive and sintering flux. The formula of the main crystalline phase is Mg | 10-04-2012 |
20130208403 | CAPACITOR DIELECTRIC COMPRISING SILICON-DOPED ZIRCONIUM OXIDE AND CAPACITOR USING THE SAME - A capacitor structure includes a storage node; a capacitor dielectric on the storage node; and a plate electrode on the capacitor dielectric. The capacitor dielectric may include a Si-doped ZrO2 layer or crystalline ZrSiOx with a Si/(Zr+Si) content ranging between 4-9% by atomic ratio. The capacitor structure further includes an interfacial TiO2/TiON layer between the storage node and the capacitor dielectric. | 08-15-2013 |
20140063690 | CAPACITOR - A capacitor includes a dielectric layer having a first plane, a second plane opposite to the first plane, and first and second through-holes communicated with the first plane and the second plane; a first external conductor layer disposed on the first plane; a second external conductor layer disposed on the second plane; a first internal electrode formed in the first through-hole, connected to the first external electrode layer, disposed in the second hole diameter part at a tip and separated from the second external electrode layer; and a second internal electrode formed in the second through-hole, connected to the second external electrode layer, and separated from the first external electrode layer. | 03-06-2014 |
20140092526 | DIELECTRIC CERAMIC AND SINGLE-PLATE CAPACITOR - A dielectric ceramic that contains, as its main constituent, a perovskite-type compound containing Ba and Ti, and, with respect to the Ti content of 100 parts by mole, contains Re1 (Re1 is at least one element of La and Nd) in the range of 0.15 to 3 parts by mole, Y in the range of 0.1 to 3 parts by mole, Mg in the range of 0.3 to 13 parts by mole, and Fe in the range of 0.01 to 5 parts by mole. | 04-03-2014 |
20140177134 | LAMINATED CERAMIC ELECTRONIC COMPONENT - A laminated ceramic capacitor includes a laminate including an inner layer portion including a ceramic dielectric layer and an internal electrode, and an outer layer portion defined by a ceramic dielectric layer. At both end portions of the laminate, external electrodes are connected to the internal electrode. In the outer layer portion, a glass layer is provided. An outer ceramic dielectric layer positioned outwardly of the glass layer has a different color from the color of an inner ceramic dielectric layer positioned inwardly of the glass layer. | 06-26-2014 |
20150124373 | DIELECTRIC COMPOSITION, DIELECTRIC FILM, AND ELECTRONIC COMPONENT - A dielectric composition containing a crystalline phase represented by a general formula of Bi | 05-07-2015 |
20160079002 | DIELECTRIC FILM AND DIELECTRIC ELEMENT - A dielectric film contains as a main component a dielectric composition represented by the general formula (Ba | 03-17-2016 |
20160376197 | DIELECTRIC PORCELAIN COMPOSITION AND DIELECTRIC ELEMENT HAVING THE SAME - A dielectric porcelain composition with a sintering density of 93% or above, is expressed by the composition formula below: 100[1−x(0.94Bi | 12-29-2016 |