Class / Patent application number | Description | Number of patent applications / Date published |
361322000 | Oxide film | 7 |
20090109598 | Metal-insulator-metal (MIM) device and method of formation thereof - In a method of fabricating a metal-insulator-metal (MIM) device, initially, a first electrode is provided. An oxide layer is provided on the first electrode, and a protective layer is provided on the oxide layer. An opening through the protective layer is provided to expose a portion of the oxide layer, and a portion of the first electrode underlying the exposed portion of the oxide layer is oxidized. A second electrode is provided in contact with the exposed portion of the oxide layer. In alternative embodiments, the initially provided oxide layer may be eliminated, and spacers of insulating material may be provided in the opening. | 04-30-2009 |
20100208412 | FERROELECTRIC MATERIAL, METHOD OF PRODUCING FERROELECTRIC MATERIAL, AND FERROELECTRIC DEVICE - Provided are a ferroelectric material having good ferroelectricity and good insulation property, and a ferroelectric device using the ferroelectric material. In the present invention, the ferroelectric material includes a metal oxide having a perovskite-type crystal structure, in which: the metal oxide contains bismuth ferrite whose iron is substituted by manganese, and at least one of a copper oxide and a nickel oxide; the bismuth ferrite is substituted by manganese at a substitution ratio of 0.5 at. % or more to 20 at. % or less with respect to a total amount of iron and manganese; and at least one of the copper oxide and the nickel oxide is added in an amount of 0.5 mol % or more to 20 mol % or less with respect to the bismuth ferrite whose iron is substituted by manganese. | 08-19-2010 |
20100220428 | COMPLEX OXIDE FILM AND METHOD FOR PRODUCING SAME, DIELECTRIC MATERIAL INCLUDING COMPLEX OXIDE FILM, PIEZOELECTRIC MATERIAL, CAPACITOR, PIEZOELECTRIC ELEMENT, AND ELECTRONIC DEVICE - The invention relates to a method for a complex oxide film having a high relative dielectric constant formed on a substrate surface by wet-treatment method and a production process of the complex oxide film comprising a step of washing the complex oxide film with an acid solution of pH 5 or less to thereby reduce salts in the film. Further, the invention relates to a dielectric material and a piezoelectric material containing the complex oxide film, a capacitor and a piezoelectric element including the material, and a electronic device comprising the element. | 09-02-2010 |
20110013342 | METHOD FOR PRODUCING DIELECTRIC FILM AND METHOD FOR PRODUCING CAPACITOR LAYER-FORMING MATERIAL USING THE METHOD FOR PRODUCING DIELECTRIC FILM - An object of the present invention is to provide a method for producing a dielectric film excellent in the deposition stability in forming a high-density dielectric film by an electrophoresis method using a dielectric particle-dispersed slurry in which dielectric particles are dispersed. In order to achieve the object, a method for producing a dielectric film using an electrophoresis method comprising arranging a cathode electrode and an anode electrode in a dielectric particle-dispersed slurry in which the dielectric particles are dispersed and carrying out electrolysis to form a dielectric film on one of the electrodes, wherein the dielectric particles contained in the dielectric particle-dispersed slurry are the calcined dielectric particles. | 01-20-2011 |
20110194229 | EMBEDDED CAPACITOR AND METHOD OF FABRICATING THE SAME - Disclosed are an embedded capacitor and a method of fabricating the same. The capacitor includes a metallic substrate, a metallic oxide layer on the metallic substrate, a first electrode layer on a first surface of the metallic oxide layer, and a second electrode layer on a second surface of the metallic oxide layer. | 08-11-2011 |
20110222207 | Methods of forming a dielectric layer structure, and methods of manufacturing a capacitor using the same - In a method of forming a dielectric layer structure, a precursor thin film chemisorbed on a substrate in a process chamber is formed using a source gas including a metal precursor. The process chamber is purged and pumped out to remove a remaining source gas therein and to remove any metal precursor physisorbed on the precursor thin film. The forming of the precursor thin film and the purging and pumping out of the process chamber are alternately and repeatedly performed to form a multi-layer precursor thin film. An oxidant is provided onto the multilayer precursor thin film to form a bulk oxide layer. | 09-15-2011 |
20120127629 | DOPED ZrO2 CAPACITOR MATERIALS AND STRUCTURES - A composite dielectric material including an early transition metal or metal oxide base material and a dopant, co-deposited, alloying or layering secondary material, selected from among Nb, Ge, Ta, La, Y, Ce, Pr, Nd, Gd, Dy, Sr, Ba, Ca, and Mg, and oxides of such metals, and alumina as a dopant or alloying secondary material. Such composite dielectric material can be formed by vapor deposition processes, e.g., ALD, using suitable precursors, to form microelectronic devices such as ferroelectric high k capacitors, gate structures, DRAMs, and the like. | 05-24-2012 |