Class / Patent application number | Description | Number of patent applications / Date published |
365001000 | MAGNETIC BUBBLES | 7 |
20150380106 | MAGNETIC MEMORY DEVICES AND SYSTEMS - A method of storing one or more bits of information comprising: forming a magnetic bubble; and storing a said bit of information encoded in a typology of a domain wall of said magnetic bubble. Preferably a bit is encoded using a symmetric topological state of the domain wall and a topological state including at least one winding rotation of a magnetisation vector of the domain wall. Preferably the magnetic bubble is confined in an island of magnetic material, preferably of maximum dimension less than 1 μm. | 12-31-2015 |
365005000 | Logic | 1 |
20080205110 | Digital Magnetic Current Sensor and Logic - A sensor for sensing magnetic field strength has a sensor element, and detection circuitry for detecting a level of resistance of the sensor element, the level of resistance varying with magnetic field under test and having hysteresis, so that upon electromagnetic excitation the resistance can switch between two or more stable levels as the magnetic field under test varies. The sensor outputs a digital signal according to the level of resistance. The sensor output may further be interpreted in terms of a change-of-state upon electromagnetic excitation. As the sensor no longer needs a different characteristic from magnetic memory cells, it can be much easier to construct and to integrate with magnetic memory cells than an analog sensor. An excitation signal varies a threshold for the magnetic field under test at which the resistance switches, to enable multiple measurements with different thresholds. Multiple sensor elements can have different thresholds, by having differing geometry or size. It has applications in current sensing, and programmable magnetic logic, when multiple input currents are sensed. Changing the threshold can change the logic operation between AND and OR. | 08-28-2008 |
365007000 | Detectors | 4 |
365008000 | Magnetoresistive | 4 |
20110261602 | MAGNETIC MEMORY DEVICES AND SYSTEMS - A method of storing one or more bits of information comprising: forming a magnetic bubble; and storing a said bit of information encoded in a typology of a domain wall of said magnetic bubble. Preferably a bit is encoded using a symmetric topological state of the domain wall and a topological state including at least one winding rotation of a magnetisation vector of the domain wall. Preferably the magnetic bubble is confined in an island of magnetic material, preferably of maximum dimension less than 1 μm. | 10-27-2011 |
20130294131 | MAGNETIC MEMORY DEVICES AND SYSTEMS - A method of storing one or more bits of information comprising: forming a magnetic bubble; and storing a said bit of information encoded in a typology of a domain wall of said magnetic bubble. Preferably a bit is encoded using a symmetric topological state of the domain wall and a topological state including at least one winding rotation of a magnetisation vector of the domain wall. Preferably the magnetic bubble is confined in an island of magnetic material, preferably of maximum dimension less than 1 μm. | 11-07-2013 |
20140177309 | MAGNETIC MEMORY DEVICES AND SYSTEMS - A method of storing one or more bits of information comprising: forming a magnetic bubble; and storing a said bit of information encoded in a typology of a domain wall of said magnetic bubble. Preferably a bit is encoded using a symmetric topological state of the domain wall and a topological state including at least one winding rotation of a magnetisation vector of the domain wall. Preferably the magnetic bubble is confined in an island of magnetic material, preferably of maximum dimension less than 1 μm. | 06-26-2014 |
20150146469 | MAGNETIC MEMORY DEVICES AND SYSTEMS - A method of storing one or more bits of information comprising: forming a magnetic bubble; and storing a said bit of information encoded in a typology of a domain wall of said magnetic bubble. Preferably a bit is encoded using a symmetric topological state of the domain wall and a topological state including at least one winding rotation of a magnetisation vector of the domain wall. Preferably the magnetic bubble is confined in an island of magnetic material, preferably of maximum dimension less than 1 μm. | 05-28-2015 |
365033000 | Magnetic storage material | 1 |
20150371696 | MEMORY DEVICE - A memory device comprising a ferromagnetic data nanowire, a ferromagnetic driver nanowire, read element and/or a spaced write element positioned about the data nanowire, wherein driving a domain wall in the driver nanowire remotely drives a domain wall in the data nanowire past the read element and/or the write element. | 12-24-2015 |