Entries |
Document | Title | Date |
20090004426 | Suppression of Oxygen Precipitation in Heavily Doped Single Crystal Silicon Substrates - This invention generally relates to a process for suppressing oxygen precipitation in epitaxial silicon wafers having a heavily doped silicon substrate and a lightly N-doped silicon epitaxial layer by dissolving existing oxygen clusters and precipitates within the substrate. Furthermore, the formation of oxygen precipitates is prevented upon subsequent oxygen precipitation heat treatment. | 01-01-2009 |
20090011168 | CIRCULAR RESIN-MOLDED PRODUCT HAVING CIRCULAR CENTER HOLE AND METHOD AND APPARATUS FOR MOLDING THE SAME - An annular molded product of the present invention is molded by means of injecting a molten resin into a mold through an injection gate and cooling and solidifying the injected molten resin. The annular molded product is formed in the mold around a center pin having a diameter equivalent to the diameter of the circular center hole. The center pin axially extends further away from a position corresponding to the circular resin-molded product, whereby the injection gate is constituted by a tubular channel formed by a cylindrical annular clearance formed within the mold around an extended portion of the center pin. An annular gate trace is formed on the front or back surface of the annular molded product in such a manner as to project in an axial direction of the annular molded product. | 01-08-2009 |
20090022930 | SINGLE CRYSTAL SILICON HAVING IMPROVED GATE OXIDE INTEGRITY - A process for producing a single crystal silicon wafer comprising a front surface, a back surface, a lateral surface joining the front and back surfaces, a central+ axis perpendicular to the front and back surfaces, and a segment which is axially symmetric about the central axis extending substantially from the front surface to the back surface in which crystal lattice vacancies are the predominant intrinsic point defect, the segment having a radial width of at least about 25% of the radius and containing agglomerated vacancy defects and a residual concentration of crystal lattice vacancies wherein (i) the agglomerated vacancy defects have a radius of less than about 70 nm and (ii) the residual concentration of crystal lattice vacancy intrinsic point defects is less than the threshold concentration at which uncontrolled oxygen precipitation occurs upon subjecting the wafer to an oxygen precipitation heat treatment. | 01-22-2009 |
20090053453 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURE THEREOF - A structure including a substrate, an intermediate layer provided and formed directly onto the substrate, a transition region, and a group II-VI bulk crystal material provided and formed as an extension of the transition region. The transition region acts to change the structure from the underlying substrate to that of the bulk crystal. In a method of manufacture, a similar technique can be used for growing the transition region and the bulk crystal layer. | 02-26-2009 |
20090061140 | Silicon Single Crystal Producing Method, Annealed Wafer, and Method of Producing Annealed Wafer - A method in which SSDs are reliably reduced while reducing void defects other than the SSDs on a wafer surface, which is essential for an annealed wafer, and ensuring that BMDs serving as gettering source in a bulk are generated, in order to stabilize the quality of the annealed wafer. Considering that annealing a silicon wafer leads to an increase of density (quantity) of deposits associated with oxygen and nitrogen and forming a core of the SSDs, SSDs are decreased by reducing the density (quantity) of the deposits associated with oxygen and nitrogen by controlling three parameters of oxygen concentration, nitrogen concentration and cooling concentration during the process of pulling and growing the silicon single crystal | 03-05-2009 |
20090220722 | PROCESSES FOR PRODUCING MONOLITHIC POROUS CARBON DISKS FROM AROMATIC ORGANIC PRECURSORS - Disclosed are processes for producing monolithic and metal doped monolithic porous carbon disks from prepolymer organic precursors in the powder form composed of either or both polyimide and polybenzimidazole. The powders are consolidated (compressed) into disks and then pyrolyzed to form the desired porous carbon disk. Porous carbon-carbon composite disks are also prepared by adding carbon to the prepolymer organic precursors. | 09-03-2009 |
20090274860 | CLAY FILM PRODUCT - The present invention provides a clay film and a member thereof, having low moisture permeability and gas permeability, having mechanical strength enabling use as a self-supporting film, having high flexibility and high heat resistance, being an electrical insulator and having low thermal conductivity; a clay film comprising clay alone, clay and a small amount of a reinforcing material, or clay, a small amount of an additive and a small amount of a reinforcing material and subjected to surface treatment; a clay film comprising clay and a small amount of a reinforcing material, or clay, a small amount of an additive and a small amount of a fibrous reinforcing material, and having gas impermeability; a multilayer film comprising a fabric and clay and having a composite multilayer structure comprising a clay layer and a fabric; and, an adhesive clay film having clay for a main component thereof and a single layer or multilayer structure in which an adhesive layer is preset on the clay film. | 11-05-2009 |
20090297755 | SEMICONDUCTOR WAFER - A semiconductor wafer has a diameter of 450 mm and a thickness of at least 725 μm and no greater than 900 μm. | 12-03-2009 |
20090304975 | EPITAXIAL SILICON WAFER AND METHOD FOR PRODUCING THE SAME - An epitaxial silicon wafer in which on growing an epitaxial film only on the front side of a large-sized wafer which is 450 mm or more in diameter, the wafer can be decreased in warpage to obtain a high intrinsic gettering performance and a method for producing the epitaxial silicon wafer. Intrinsic gettering functions have been imparted to a high resistant large-sized silicon wafer which is 450 mm or more in diameter and 0.1 Ω·cm or more in specific resistance by introducing nitrogen, carbon or both of them to a melt on pulling up an ingot. Thereby, after the growth of an epitaxial film, a silicon wafer is less likely to warp greatly. As a result, it is possible to decrease the warpage of an epitaxial silicon wafer and also to obtain a high intrinsic gettering performance. | 12-10-2009 |
20090311460 | SEMICONDUCTOR WAFER - A semiconductor wafer with high flatness is provided. The semiconductor wafer has a diameter φ of 450 mm and a thickness of at least 900 μm and no greater than 1,100 μm. | 12-17-2009 |
20100040821 | Molding glass lens and mold thereof - A molding glass lens and a mold thereof are disclosed. The molding glass lens consists of an upper optical surface, a lower optical surface, two outers surrounding the optical surfaces and at least three grooves arranged in the form of a circle disposed on the lower outer and/or the upper outer. The disposition of the grooves has no affecting in original size of the outers as well as assembling with other mechanical parts in les group. The mold of the lens includes an upper molding unit and a lower molding unit. Cavity of each molding unit is composed of a central part for forming an optical surface of the lens and an outer circular part for forming outer of the lens. At least three protrudent parts with the same height are disposed in the form of a circle on the outer circular of the lower molding unit and/or the upper molding unit. Thus the air in the mold cavity is easy to exhaust through the gap formed by protrudent parts and glass preform. Therefore, air bubbles generated during the molding processes are prevented and precision of the glass lens is provided. | 02-18-2010 |
20100055374 | Retroflective pavement markers for wet weather - Disclosed is a bi-composition preformed thermoplastic pavement marking material having a first composition of thermoplastic material with specified melting temperature in the range of 90° to 120° C. and a second composition of thermoplastic material having desired profiles with a specified melt temperature of 10° C.-70° C. higher than the first composition wherein preformed thermoplastic pavement marking has embedded reflective elements and where the first composition melts at an observably lower temperature than the second composition preventing overheating of the second composition and providing good bond to pavement. | 03-04-2010 |
20100136279 | Ceramic substrate - A ceramic substrate according to one aspect of the invention comprises a main surface wherein a diameter of a first imaginary circle inscribed in a circumference of the main surface is represented by C (m), a thickness of the ceramic substrate is represented by h (m), a Poisson ratio of the ceramic substrate is represented by ν, a density of the ceramic substrate is represented by ρ(kg/m | 06-03-2010 |
20100215890 | OPTICAL COMPOSITES BETWEEN SIMILAR AND BETWEEN DISSIMILAR MATERIALS - Manufacturing techniques and composite structures that are able to meet increasing demanding requirements for large-scale crystal composites (e.g., greater than 100-200 mm in dimensions) that can be manufactured within reasonable time frames. A method of making an optical composite comprises providing first and second components to be bonded along respective surfaces, treating at least one component over at least a portion of the respective surface, and thereafter, bringing the first and second components into optical contact for bonding along the surface having the treated layer. Treating can include one or more of processing the component to provide a porous interface layer, processing the component to form a pattern of channels on the surface to be bonded, and providing an optical coating on the surface to be bonded. | 08-26-2010 |
20100227106 | PREDICTABLE BONDED REWORK OF COMPOSITE STRUCTURES USING TAILORED PATCHES - A patch for reworking an inconsistent area in a composite structure includes a composite laminate patch and a layer of adhesive for bonding the laminate patch to the composite structure. The laminate patch has at least first and second regions for releasing strain energy around the inconsistent area respectively at different rates. | 09-09-2010 |
20100285262 | FLUOROCARBON RESIN COMPOSITE, COOKWARE, COOKER, ROLLER FOR OFFICE AUTOMATION EQUIPMENT, BELT FOR OFFICE AUTOMATION EQUIPMENT, AND METHOD FOR PRODUCING THEM - [Object] There are provided a fluorocarbon resin composite having improved abrasion resistance while nonadhesiveness, which is a feature of a fluorocarbon resin, is maintained, cookware, and a roller and a belt for use in office automation equipment. | 11-11-2010 |
20100316830 | REINFORCING RING - A reinforcing ring ( | 12-16-2010 |
20100330325 | Sintered Silicon Wafer - Provided is a sintered silicon wafer in which the maximum crystal grain size is 20μm or less and the average crystal grain size is 1μm or more but not more than 10μm; specifically, provides is a sintered silicon wafer having the following mechanical properties measured by collecting a plurality of test samples from the sintered silicon wafer having a diameter of 400mm or more, namely, the average deflecting strength based on a three-point bending test of 20kgf/mm | 12-30-2010 |
20110104426 | EDGE PROTECTION SEAL FOR BONDED SUBSTRATES - A dielectric material layer is deposited on exposed surfaces of a bonded structure that includes a first substrate and a second substrate. The dielectric material layer is formed on an exposed planar surface of a second substrate and the entirety of peripheral sidewalls of the first and second substrates. The dielectric material layer can be formed by chemical vapor deposition, atomic layer deposition, or plasma induced deposition. Further, the dielectric material layer seals the entire periphery of the interface between the first and second substrates. If a planar portion of the dielectric material layer can be removed by planarization to facilitate thinning of the bonded structure, the remaining portion of the dielectric material layer can form a dielectric ring. | 05-05-2011 |
20110135865 | MEMBER FOR FORMING ELEMENT, METHOD OF MANUFACTURING ELEMENT, AND ELEMENT - When a groove is provided for letting gas out of a die for molding a material constituting an optical element, a warped shape is sometimes transferred to the lens or other optical element molded from the material. When a through-hole is provided in a hollow body disposed on the outside of the external peripheral surface of the die, the strength of the body is severely reduced. | 06-09-2011 |
20110165364 | ANTI-LOADING ABRASIVE ARTICLE - A coated abrasive article includes a backing having a surface, a plurality of abrasive regions overlying the surface in each of the first and second portions, and at least one macro-channel. The surface of the backing has a shape defined by an outer contour. A bisecting axis divides the shape into first and second portions. Each abrasive region includes a binder and a plurality of abrasive grains in contact with the binder. The abrasive grains have an average grain size of not greater than about 200 microns. The at least one macro-channel defines a passageway extending between a pair of adjacent abrasive regions and terminating at openings at the outer contour within each of the first and second portions. The macro-channel has an average channel width of between about 0.1 millimeters to about 5 millimeters and is substantially free of the binder and the abrasive grains. | 07-07-2011 |
20110171414 | Sacrificial Catalyst Polycrystalline Diamond Element - A superhard composite material comprising a polycrystalline diamond cutter (PDC) having a cutting surface and cutting edges having a polycrystalline diamond thickness of about 3 mm is integrally formed with a sacrificial catalyst source that is removed later in the processing of the of the cutter. | 07-14-2011 |
20110217502 | ANIONIC MODIFIED POLYURETHANE DISPERSIONS - The present invention relates to an aqueous polyurethane urea dispersion comprising a polyurethane urea polymer comprising structural units of the formula (I) | 09-08-2011 |
20110300323 | PRODUCTION METHOD FOR A BULK SIC SINGLE CRYSTAL WITH A LARGE FACET AND MONOCRYSTALLINE SIC SUBSTRATE WITH HOMOGENEOUS RESISTANCE DISTRIBUTION - A method is used to produce a bulk SiC single crystal. A seed crystal is arranged in a crystal growth region of a growing crucible. An SiC growth gas phase is produced in the crystal growth region. The bulk SiC single crystal having a central longitudinal mid-axis grows by deposition from the SiC growth gas phase, the deposition taking place on a growth interface of the growing bulk SiC single crystal. The SiC growth gas phase is at least partially fed from an SiC source material and contains at least one dopant from the group of nitrogen, aluminum, vanadium and boron. At least in a central main growth region of the growth interface arranged about the longitudinal mid-axis, a lateral temperature gradient of at most 2 K/cm measured perpendicular to the longitudinal mid-axis is adjusted and maintained in this range. The bulk SiC single crystal has a large facet region. | 12-08-2011 |
20120009373 | Hybrid Silicon Wafer and Method of Producing the Same - Provided is a hybrid silicon wafer made of a wafer comprised primarily of two or more types of concentric single-crystal silicon or polycrystalline silicon prepared by mutually integrating one in a molten state and another in a solid state, and having specific resistances that differ by two orders of magnitude or more. Additionally provided is a method of manufacturing a hybrid silicon wafer, wherein high specific resistance silicon or an ingot comprised primarily of silicon is disposed at a central portion or a decentered position in a crucible, a nugget or powdered silicon having a specific resistance that is lower by two orders of magnitude or more than the ingot is filled in a void part around the ingot in the crucible, the nugget or powdered silicon is selectively melted and integrated with the ingot to form a complex, and a wafer shape is cut out therefrom. The provided hybrid silicon wafer comprises the functions of both a polycrystalline silicon wafer and a single-crystal wafer, or two or more polycrystalline silicon wafers having different functions. | 01-12-2012 |
20120009374 | Hybrid Silicon Wafer and Method of Producing the Same - Provided is a hybrid silicon wafer in which molten state polycrystalline silicon and solid state single-crystal silicon are mutually integrated, comprising fine crystals having an average crystal grain size of 8 mm or less at a polycrystalline portion within 10 mm from a boundary with a single-crystal portion. Additionally provided is a method of manufacturing a hybrid silicon wafer, wherein a columnar single-crystal silicon ingot is sent in a mold in advance, molten silicon is cast around and integrated with the single-crystal ingot to prepare an ingot complex of single-crystal silicon and polycrystalline silicon, and a wafer shape is cut out therefrom. The provided hybrid silicon wafer comprises the functions of both a polycrystalline silicon wafer and a single-crystal wafer. | 01-12-2012 |
20120076968 | METHOD AND APPARATUS FOR FABRICATING CRACK-FREE GROUP III NITRIDE SEMICONDUCTOR MATERIALS - Method for producing a III-N (AlN, GaN, Al | 03-29-2012 |
20120128915 | GaAs Wafer And Method For Manufacturing The GaAs Wafer - There is provided a method for manufacturing a GaAs wafer comprising: growing a GaAs single crystal by an LEC method; and fabricating a GaAs wafer by slicing the GaAs single crystal obtained by growing the GaAs single crystal, wherein in growing the GaAs single crystal, a crystal-melt interface between the GaAs single crystal and a raw material melt is formed into a convex-shape toward the raw material melt side, and a ratio T | 05-24-2012 |
20120196074 | GRAPHENE SHEET AND METHOD FOR PRODUCING THE SAME - To provide a graphene sheet that has a large area, is homogeneous, and has a small amount of domain boundaries, a novel method for producing a graphene sheet suitable for industrial applications, such as application to electronics, that is capable of producing a graphene sheet that has well aligned crystal orientation at a low cost, and a graphene sheet. | 08-02-2012 |
20120196075 | RESIN COMPOSITION, SEMICONDUCTOR WAFER BONDING PRODUCT AND SEMICONDUCTOR DEVICE - A resin composition of the present invention is used for providing a spacer | 08-02-2012 |
20120207961 | FIRE PROTECTION ELEMENT - A fire protection element is disclosed. The fire protection element has a foamed body formed at least partially of an ash-forming mixture, and in an embodiment, an intumescent mixture. A carrier component is embedded in the foamed body. The carrier component is a thin, flat part which is covered by the body on at least one flat side. | 08-16-2012 |
20120263908 | METHOD FOR APPLYING LEATHER TO VEHICLE INTERIOR PARTS - In a method of manufacturing leather for being applied to components, the following procedural steps are performed: providing manufactured leather, and applying an adhesive layer to the rear side of the leather or, respectively, to a composite material face in case of a leather composite material, wherein a bonding adhesive is used for building up the adhesive layer, allowing repositioning of the leather or of the leather composite material essentially an arbitrary number of times. | 10-18-2012 |
20120282426 | RESISTANCE HEATED SAPPHIRE SINGLE CRYSTAL INGOT GROWER, METHOD OF MANUFACTURING RESISTANCE HEATED SAPPHIRE SNGLE CRYSTAL INGOT, SAPPHIRE SNGLE CRYSTAL INGOT, AND SAPPHIRE WAFER - Provided are a resistance heated sapphire single crystal ingot grower, a method of manufacturing a resistance heated sapphire single crystal ingot, a sapphire single crystal ingot, and a sapphire wafer. The resistance heated sapphire single crystal ingot grower comprises according to an embodiment includes a chamber, a crucible included in the chamber and containing an alumina melt, and a resistance heating heater included inside the chamber and heating the crucible. | 11-08-2012 |
20120288661 | SOLID STRUCTURE GLASS AND METHOD FOR MAKING THE SAME - The present invention discloses a solid structure glass with a thin cross-sectional plane and a method for making the same. The solid structure glass includes an inner surface and an outer surface each combined of a curved surface, or at least two curved surfaces, or a curved surface and at least one flat surface, or at least two flat surfaces. As a result, the solid structure glass can easily be made with different shapes so as to be especially compatible with the form factor of products. Besides, the solid structure glass is made by heating a glass preform and a mold together into a forming temperature of the glass preform under condition that the glass preform is in a softened state. | 11-15-2012 |
20120308758 | SILICON CARBIDE CRYSTAL INGOT, SILICON CARBIDE CRYSTAL WAFER, AND METHOD FOR FABRICATING SILICON CARBIDE CRYSTAL INGOT - A silicon carbide crystal ingot having a surface greater than or equal to 4 inches, having an n-type dopant concentration greater than or equal to 1×10 | 12-06-2012 |
20120308759 | LOW-DISLOCATION MONOCRYSTALLINE ALN SUBSTRATE - A bulk AlN single crystal is grown on a monocrystalline AlN seed crystal having a central longitudinal mid-axis and disposed in a crystal growth region of a growing crucible. The bulk AlN single crystal grows parallel to the longitudinal mid-axis by deposition on the AlN seed crystal. The crucible has a lateral crucible inner wall extending in the growth direction. A free space is formed between the AlN crystals and the lateral crucible inner wall. Bulk AlN single crystals and monocrystalline AlN substrates produced therefrom are obtained with only few dislocations, which are substantially distributed homogeneously. Growing crucibles are provided with a crucible lid with a gap formed between an inner growing crucible and the crucible lid through which some of the AlN growth gas phase generated inside the crystal growth region escapes and is deposited on a bottom of an outer growing crucible opposite the lid. | 12-06-2012 |
20120315427 | SINGLE CRYSTAL SILICON CARBIDE SUBSTRATE AND METHOD OF MANUFACTURING THE SAME - A single crystal silicon carbide substrate has a 4H-polytype crystal structure, has with nitrogen atoms doped as a conduction impurity with an atomic concentration of more than 1×10 | 12-13-2012 |
20120315428 | Method For Producing Semiconductor Wafers Composed Of Silicon Having A Diameter Of At Least 450 mm, and Semiconductor Wafer Composed Of Silicon Having A Diameter of 450 mm - Silicon semiconductor wafers are produced by:
| 12-13-2012 |
20120321833 | PROGRAMMABLE PELLET PRESS - A programmable pellet press for compressing a powdered sample and forming a sample disc, including a hydraulic mechanism for compressing the sample in a mold operatively and electrically connected to a control mechanism for commanding an exertion of low constant preloading pressure followed by pressure increases with constant pressure dwell times upon the hydraulic mechanism. An algorithm for a programmable pellet press on computer readable media including performing a pressurization subroutine, performing a proportional-integral-derivative (PID) feedback loop, performing a depressurization subroutine, and performing an unloading subroutine when pressure is at a baseline level. A method of compressing a powdered sample into a sample disc by loading the powdered sample into a mold of a programmable pellet press, from a baseline pressure, increasing hydraulic pressure and maintaining a preloading pressure against the sample, performing pressure increases upon the sample, depressurizing the sample, and forming a sample disc. A sample disc formed. | 12-20-2012 |
20130022773 | SINGLE-CRYSTAL SUBSTRATE,SINGLE-CRYSTAL SUBSTRATE HAVING CRYSTALLINE FILM,CRYSTALLINE FILM,METHOD FOR PRODUCING SINGLE-CRYSTAL SUBSTRATE HAVING CRYSTALLINE FILM,METHOD FOR PRODUCING CRYSTLLINE SUBSTRATE,AND METHOD FOR PRODUCING ELEMENT - Provided are a single-crystal substrate for epitaxial growth on which a crystalline film may be formed with stress thereon being suppressed or eliminated, a single-crystal substrate having a crystalline film, a crystalline film, a method of producing a single-crystal substrate having a crystalline film, a method of producing a crystalline substrate, and an element producing method. The single-crystal substrate has a roughened surface formed on at least a partial region of a surface of the single-crystal substrate. And in order to obtain the single-crystal substrate having a crystalline film, a single-crystalline film is formed by epitaxial growth on a roughened-surface unformed surface on which the roughened surface is not formed, and a crystalline film having low crystallinity than the single-crystalline film is formed by epitaxial growth on a roughened-surface formed surface of the single-crystal substrate. | 01-24-2013 |
20130034681 | Method for Producing a Freeze-Dried Molded Article - The invention relates to freeze-dried molded articles comprising at least one or more active substances and optionally one or more scaffold-forming agents, optionally one or more auxiliary substances, as well as a coating comprising at least one film-forming agent. Furthermore, the invention relates to methods for manufacturing these freeze-dried molded articles, the combination of such freeze-dried molded articles in kit-of-parts arrangements together with aqueous solutions, as well as the use of the freeze-dried molded articles and the kit-of-parts combinations for pharmaceutical and cosmetic application. | 02-07-2013 |
20130065007 | METHOD FOR MANUFACTURING FINE CONCAVE-CONVEX PATTERN AND SHEET FOR MANUFACTURING FINE CONCAVE-CONVEX PATTERN - According to a first aspect of the invention, a method for manufacturing a concave-convex pattern includes the steps of heating a sheet-like member, compressively bonding the sheet-like member, removing the sheet-like member after the compressively bonding, and transferring a pattern shape of a reverse concave-convex pattern layer to a surface of the substrate. The sheet-like member has a concave-convex pattern block on at least one of surfaces thereof, and is given flowability thereto by heating. The reverse concave-convex pattern layer is formed on the one of the surfaces, and continues over two or more concaves of the concave-convex pattern block so that the reverse concave-convex pattern layer meshes at least partially with the concave-convex pattern block. At least the reverse concave-convex pattern layer is left on the substrate. Here, the one of the surfaces has the concave-convex pattern block. | 03-14-2013 |
20130089694 | DEVICE FOR MAKING CARBON NANOTUBE FILM - A device for making a carbon nanotube film includes a substrate having a surface, and two substantially parallel slits defined on the surface of the substrate. The two substantially parallel slits extend into the substrate from the surface of the substrate. A growing surface is defined by the two substantially parallel slits and located between the two substantially parallel slits. | 04-11-2013 |
20130101778 | BLOCK BODY FOR PRODUCING DENTURE BASE - To provide a most suitable block body for producing a denture base used when producing a denture base by cutting, the block body for producing a denture base is produced by polymerizing a (meth)acrylate monomer so as to have a color tone within a range that L* is 40 to 55, a* is 14 to 31, and b* is 5 to 20 when the color tone is measured with a sample thickness of 4 mm based on JIS Z8729, and to be preferably in a cylindrical shape having a diameter of 8 to 15 cm and a height of 1.5 to 5 cm, or in an elliptical-cylindrical shape having a major diameter and minor diameter of 8 to 15 cm and a height of 1.5 to 5 cm. | 04-25-2013 |
20130136884 | ELASTIC MEMBRANE - There is provided an elastic membrane which can uniformly reduce deformation (elongation) of its contact portion, having a contact surface for contact with a substrate, along the contact surface in substantially the entire area of the contact portion from the center to the periphery. The elastic membrane includes a contact portion having a contact surface for contact with the substrate; a first peripheral wall portion coupled to the peripheral end of the contact portion and extending upwardly; and a second peripheral wall portion located on the inside of the first peripheral wall portion, coupled to the contact portion and extending upwardly, and defining a first chamber on the outer side thereof and a second chamber on the inner side thereof. In the elastic membrane, substantially the entire area of the contact portion is reinforced with a reinforcing member having a higher rigidity than the elastic membrane. | 05-30-2013 |
20130156989 | MANUFACTURING A FLEXIBLE STRUCTURE BY TRANSFERS OF LAYERS - A method for manufacturing a flexible structure including implanting ionic species in first and second source substrates so as to form first and second embrittlement regions respectively, delimiting first and second thin films, providing a flexible substrate, the stiffness R of which is less than or equal to 10 | 06-20-2013 |
20130171402 | PRODUCTION METHOD FOR AN SIC VOLUME MONOCRYSTAL WITH A HOMOGENEOUS LATTICE PLANE COURSE AND A MONOCRYSTALLINE SIC SUBSTRATE WITH A HOMOGENEOUS LATTICE PLANE COURSE - A method is used for producing an SiC volume monocrystal by sublimation growth. Before the beginning of growth, an SiC seed crystal is arranged in a crystal growth region of a growth crucible and powdery SiC source material is introduced into an SiC storage region of the growth crucible. During the growth, by sublimation of the powdery SiC source material and by transport of the sublimated gaseous components into the crystal growth region, an SiC growth gas phase is produced there. The SiC volume monocrystal having a central center longitudinal axis grows by deposition from the SiC growth gas phase on the SiC seed crystal. The SiC seed crystal is heated substantially without bending during a heating phase before the beginning of growth, so that an SiC crystal structure with a substantially homogeneous course of lattice planes is provided in the SiC seed crystal. | 07-04-2013 |
20130224421 | SINTERED MAGNESIUM OXIDE MATERIAL, AND PROCESS FOR PRODUCTION THEREOF - Disclosed herein are a sintered magnesium oxide material which is capable of suppressing the occurrence of splashing during film formation and which is less likely to cause clogging of a supply inlet of a film formation device, a deposition material for PDP-protecting film using the same, and a process for producing the sintered material. The sintered magnesium oxide material contains magnesium oxide, 3 to 50 mass % of an oxide of a Group 2A element other than magnesium in the periodic table, and if necessary, 1000 ppm or less of one or two or more elements selected from the group consisting of aluminum, yttrium, cerium, zirconium, scandium, and chromium, and has a disk-like, elliptical plate-like, polygonal plate-like, or half-moon-like shape or a cubic or rectangular solid shape with rounded apexes. | 08-29-2013 |
20130251933 | Fabrication of High Gradient Insulators By Stack Compression - Individual layers of a high gradient insulator (HGI) are first pre-cut to their final dimensions. The pre-cut layers are then stacked to form an assembly that is subsequently pressed into an HGI unit with the desired dimension. The individual layers are stacked, and alignment is maintained, using a sacrificial alignment tube that is removed after the stack is hot pressed. The HGI's are used as high voltage vacuum insulators in energy storage and transmission structures or devices, e.g. in particle accelerators and pulsed power systems. | 09-26-2013 |
20130273294 | CARBON NANORING AND METHOD FOR PREPARING THE SAME - The invention relates to a carbon nanoring and a method for preparing the same. The carbon nanoring according to the present invention is composed of monolayered or multilayered coaxial carbon rings, wherein the carbon ring has a structure similar to that of a closed ring system formed by graphite sheet being rolled, and each of an axial dimension and a radial dimension of the carbon nanoring is nanoscale with the axial dimension being smaller than the radial dimension. The invention further provides a method for preparing the above carbon nanoring including calcinating in an inert atmosphere or a reducing atmosphere a layered double hydroxides obtained by intercalating a long-chain alkyl anion and a carbon source molecule, growing a carbon nanoring within a confined region between layers under the catalysis of the metal element in layers, and removing the metal and the metal oxide by dissolving in an acid to obtain the carbon nanoring. By using this method, the carbon nanoring can be effectively controlled in terms of the axial dimension, the radial dimension, and the number of layers of the carbon ring thereof. The carbon nanoring provided by the present invention has the nano-ring shaped structure and the excellent properties of carbon materials, as well as more edge carbons and dangling bonds, and thus it has broad application prospects in such field as nanodevices, energy storage and sensing. | 10-17-2013 |
20130280466 | Large Diameter, High Quality SiC Single Crystals, Method and Apparatus - A method and system of forming large-diameter SiC single crystals suitable for fabricating high crystal quality SiC substrates of 100, 125, 150 and 200 mm in diameter are described. The SiC single crystals are grown by a seeded sublimation technique in the presence of a shallow radial temperature gradient. During SiC sublimation growth, a flux of SiC bearing vapors filtered from carbon particulates is substantially restricted to a central area of the surface of the seed crystal by a separation plate disposed between the seed crystal and a source of the SiC bearing vapors. The separation plate includes a first, substantially vapor-permeable part surrounded by a second, substantially non vapor-permeable part. The grown crystals have a flat or slightly convex growth interface. Large-diameter SiC wafers fabricated from the grown crystals exhibit low lattice curvature and low densities of crystal defects, such as stacking faults, inclusions, micropipes and dislocations. | 10-24-2013 |
20130344277 | Hydrothermal Growth of Heterogeneous Single Crystals Exhibiting Amplified Spontaneous Emission Suppression - Single crystals are described that contain several regimes within the crystal that perform different functions related to the enhanced performance of a laser gain medium. At least one regime of the single crystals can be utilized to suppress amplified spontaneous emission and parasitic oscillation in a laser gain medium. A single crystal can include core and cladding regions, the cladding region providing amplified spontaneous emission suppression. The core region of the crystal can include as dopant one or more ions that take part in the lasing when suitably pumped. The amplified spontaneous emission suppression region can include as dopant one or more ions that can prevent additional spontaneous emission that can to depletion of the upper laser states, thus reducing laser performance including one or more ions that absorb spontaneously emitted photons and/or a higher concentration of the active lasing ions of the core. | 12-26-2013 |
20140010986 | APPARATUS FOR MANUFACTURING A FLANGED COMPOSITE COMPONENT AND METHODS OF MANUFACTURING THE SAME - A method of manufacturing a flanged composite component is provided. The method includes coupling a composite structure to s first composite material. The method includes coupling a second composite material to the composite structure and placing a first expansion device within the composite structure. A forming element is coupled to at least one of the first composite material, the composite structure, and the second composite material against the mold. The method includes coupling a pressure element to the forming element to define a space among the mold, the forming element, and the pressure element. The method includes expanding the first expansion device to impart a force to the second composite material to move the second composite material away from the composite structure and into the space to facilitate forming a first flange. | 01-09-2014 |
20140030466 | Friction Pad on Portable Handheld Electronic Device - A frictional pad is adhered to a handheld electronic device and disposable and held in a non-adhesive, non-slip fashion on an upward facing support surface. The frictional pad includes a polyurethane dome adhered to the handheld electronic device by the adhesive film. The dome has a broad, flat shape with an outfacing surface facing the upward facing support surface. The outfacing surface of the dome contacts the upward facing support surface and is tacky to releasably hold the handheld electronic device to the upward facing support surface. | 01-30-2014 |
20140093671 | LARGE ALUMINUM NITRIDE CRYSTALS WITH REDUCED DEFECTS AND METHODS OF MAKING THEM - Reducing the microvoid (MV) density in AlN ameliorates numerous problems related to cracking during crystal growth, etch pit generation during the polishing, reduction of the optical transparency in an AlN wafer, and, possibly, growth pit formation during epitaxial growth of AlN and/or AlGaN. This facilitates practical crystal production strategies and the formation of large, bulk AlN crystals with low defect densities—e.g., a dislocation density below 10 | 04-03-2014 |
20140120297 | Production of Dental Shaped Parts Composed of Porous Glass - The invention discloses a blank for producing dental shaped parts which consists entirely of porous glass without crystalline portions. The density of the blank is between 50% and 95% of its theoretical density. It has a discoidal shape with a diameter of at least 20 mm. | 05-01-2014 |
20140154453 | OPTICAL WHEEL - A phosphor wheel comprises a wavelength conversion portion. The wavelength conversion portion comprises a wavelength conversion material optically integrated with at least one convex surface. | 06-05-2014 |
20140186571 | Round Paper towel and Napkin Product - An apparatus for Round Paper Product and Napkin product is to provide to provide a more practical, attractive, and environmentally sound alternative to standard, square shaped paper towels and napkins featuring a distinct circular shape for easy placement in microwaves. ea | 07-03-2014 |
20140220289 | OPTICAL DISK USED FOR FABRICATING GRAPHENE AND METHOD OF MANUFACTURING THE SAME - An optical disk for fabricating graphene, a multilayered plate for fabricating graphene, and a method of manufacturing the optical disk or multilayered plate are provided. The optical disk includes a thermoplastic polymer substrate with a reflection layer for reflecting incident light, and a graphite oxide layer applied on the thermoplastic polymer substrate. The method of manufacturing a disk for fabricating graphene involves: obtaining a thermoplastic polymer substrate with a reflection layer for reflecting incident light; and applying a graphite oxide layer on the thermoplastic polymer substrate. | 08-07-2014 |
20140220290 | DISK FOR FABRICATING GRAPHENE AND METHOD OF MANUFACTURING THE SAME - A disk used for fabricating graphene, a multilayered plate, and a method of manufacturing the same are provided. The disk includes a thermoplastic polymer substrate with a reflection layer disposed on one side of the thermoplastic polymer substrate; and a graphite oxide layer provided on the thermoplastic polymer substrate. The method of manufacturing a disk for fabricating graphene involves: obtaining a thermoplastic polymer substrate with a reflection layer disposed on one side thereof; and applying a graphite oxide layer on the thermoplastic polymer substrate. | 08-07-2014 |
20140234568 | SAPPHIRE SUBSTRATE - A sapphire substrate includes a generally planar surface having a crystallographic orientation selected from the group consisting of a-plane, r-plane, m-plane, and c-plane orientations, and having a nTTV of not greater than about 0.037 μm/cm | 08-21-2014 |
20140255640 | SAPPHIRE SUBSTRATE STRUCTURE FOR PATTERN ETCHING AND METHOD OF FORMING PATTERN SAPPHIRE SUBSTRATE - The present invention discloses a sapphire substrate structure for pattern etching and method of forming a pattern sapphire substrate (PSS). The sapphire substrate after pattern etching is suitable to be used as the substrate of a light-emitting device. The sapphire substrate structure comprises a photoresist layer, an underlayer, and a sapphire substrate. The photoresist layer is a uniform layer made of G-line photoresist, I-line photoresist, 248 nm DIN photoresist, or 193 nm Arf photoresist and comprises a flat surface. The underlayer is a uniform layer made of an organic or inorganic compound and comprises a flat surface. The sapphire substrate is formed by epitaxy, while the photoresist layer and the underlayer are formed by coating. After the sapphire substrate structure is formed, it is step by step transformed into a pattern sapphire substrate through an exposure/development process, an etching process, and a cleaning process subsequently. | 09-11-2014 |
20140255641 | SILICON MEMBER FOR SEMICONDUCTOR APPARATUS AND METHOD OF PRODUCING THE SAME - A silicon member for a semiconductor apparatus is provided. The silicon member has an equivalent performance to one fabricated from a single-crystalline silicon even though it is fabricated from a unidirectionally solidified silicon. In addition, it can be applied for producing a relatively large-sized part. The silicon member is fabricated by sawing a columnar crystal silicon ingot obtained by growing a single-crystal from each of seed crystals by placing the seed crystals that are made of a single-crystalline silicon plate on a bottom part of a crucible and unidirectionally solidifying a molten silicon in the crucible. | 09-11-2014 |
20140295126 | METHOD FOR SLICING SEMICONDUCTOR SINGLE CRYSTAL INGOT - An amount of warp of a wafer is not only reduced, but the amount of warp of the wafer is also accurately controlled to a desired amount. The present invention relates to a method for slicing a semiconductor single crystal ingot, by which a cylindrical semiconductor single crystal ingot is bonded to and held by a holder in a state where the ingot is rotated at a predetermined rotation angle around a crystal axis of the ingot different from a center axis of a cylinder of this ingot and the ingot is sliced by a cutting apparatus in this state. The predetermined rotation angle at the time of bonding and holding the ingot with the use of the holder in such a manner that an amount of warp of a wafer sliced out by the cutting apparatus becomes a predetermined amount. | 10-02-2014 |
20140308473 | THREE DIMENSIONAL STRUCTURES DERIVED FROM PLANAR PANELS - A three-dimensional structure comprising a plurality of substantially planar sections and an adhesive layer. The planar sections are oriented in stacked relation with one another. The adhesive layer binds the sections in substantially fixed relation with one another. In exemplary embodiments, the sections may be formed from a single piece or from plural pieces. The three-dimensional structure is formed by positioning the respective sections on a retainer and affixing them in place in relation to one another. | 10-16-2014 |
20140363607 | SILICON CARBIDE SINGLE CRYSTAL WAFER AND MANUFACTURING METHOD FOR SAME - Provided are a method for manufacturing a SiC single crystal having high crystal quality and, in particular, extremely low screw dislocation density and a SiC single crystal ingot obtained by the method. In particular, provided is a silicon carbide single crystal substrate that is a substrate cut from a bulk silicon carbide single crystal grown by the Physical Vapior Transport (PVT) method, in which the screw dislocation density is smaller in the peripheral region than in the center region, so that screw dislocations are partially reduced. | 12-11-2014 |
20150010726 | METHOD OF MANUFACTURING SILICON CARBIDE SINGLE CRYSTAL AND SILICON CARBIDE SINGLE CRYSTAL SUBSTRATE - Quality of a silicon carbide single crystal is improved. A crucible having first and second sides is prepared. A solid source material for growing silicon carbide with a sublimation method is arranged on the first side. A seed crystal made of silicon carbide is arranged on the second side. The crucible is arranged in a heat insulating container. The heat insulating container has an opening facing the second side. The crucible is heated such that the solid source material sublimes. A temperature on the second side is measured through the opening in the heat insulating container. The opening has a tapered inner surface narrowed toward the outside of the heat insulating container. | 01-08-2015 |
20150030798 | COMPOSITE STRUCTURAL ELEMENT - A composite structural element is provided herein, which comprises a basal member having voids of a predefined shape that are open to a surface thereof; and filling elements designed to fit into the voids. The predefined shape of the voids and/or an interface between the filling elements and the voids are arranged to maintain the filling elements within the voids. | 01-29-2015 |
20150056398 | TIRE - A tire includes a circular tire frame formed from a resin material, in which the resin material has a tear strength of 10 N/mm or greater. | 02-26-2015 |
20150056399 | Ultra-Thin Polymer Film, and Porous Ultra-Thin Polymer Film - The objective of the present invention is to provide a porous ultra-thin polymer film, and a method for producing said porous ultra-thin polymer film. The present invention provides a porous ultra-thin polymer film with a film thickness of 10 nm-1000 nm. In addition, the present invention provides a method for producing a porous ultra-thin polymer film, comprising the steps of: dissolving two types of mutually-immiscible polymers in a first solvent in an arbitrary proportion to obtain a solution; applying the solution onto a substrate and then removing the first solvent from the solution applied onto the substrate to obtain a phase-separated ultra-thin polymer film that has been phase-separated into a sea-island structure; and immersing the ultra-thin polymer film in a second solvent which is a good solvent for the polymer of the island parts but a poor solvent for a polymer other than the island parts to remove the island parts, thereby obtaining a porous ultra-thin polymer film. | 02-26-2015 |
20150072100 | SILICON CARBIDE EPITAXIAL SUBSTRATE AND METHOD OF MANUFACTURING SILICON CARBIDE EPITAXIAL SUBSTRATE - A silicon carbide epitaxial substrate having a main surface (second main surface) includes: a base substrate; and a silicon carbide epitaxial layer formed on the base substrate and including the main surface (second main surface), the second main surface having a surface roughness of 0.6 nm or less, a ratio of standard deviation of a nitrogen concentration in the silicon carbide epitaxial layer at a surface layer including the main surface (second main surface) within a plane of the silicon carbide epitaxial substrate to an average value of the nitrogen concentration in the silicon carbide epitaxial layer at the surface layer within the plane of the silicon carbide epitaxial substrate being 15% or less. | 03-12-2015 |
20150072101 | BULK SILICON CARBIDE HAVING LOW DEFECT DENSITY - A method of producing silicon carbide is disclosed. The method comprises the steps of providing a sublimation furnace comprising a furnace shell, at least one heating element positioned outside the furnace shell, and a hot zone positioned inside the furnace shell surrounded by insulation. The hot zone comprises a crucible with a silicon carbide precursor positioned in the lower region and a silicon carbide seed positioned in the upper region. The hot zone is heated to sublimate the silicon carbide precursor, forming silicon carbide on the bottom surface of the silicon carbide seed. Also disclosed is the sublimation furnace to produce the silicon carbide as well as the resulting silicon carbide material. | 03-12-2015 |
20150079327 | 3D PRINTING WITH CUSTOM SURFACE REFLECTION - A method for fabricating custom surface reflectance and spatially-varying bi-directional reflectance distribution functions (BDRFs or svBRDFs). The 3D printing method optimizes micro-geometry to produce a normal distribution function (NDF) that can be printed on surfaces with a 3D printer. Particularly, the method involves optimizing the micro-geometry for a wide range of analytic NDFs and simulating the effective reflectance of the resulting surface. Using the results of the simulation, the appearance of an input svBRDF can be reproduced. To this end, the micro-geometry is optimized in a data-driven fashion and distributed on the surface of the printed object. The methods were demonstrated to allow 3D printing svBRDF on planar samples with current 3D printing technology even with a limited set of printing materials, and the described methods have been shown to be naturally extendable to printing svBRDF on arbitrary shapes or 3D objects. | 03-19-2015 |
20150079328 | POLYMER FILMS - Biodegradable, cross-linked polymer films and methods of making the same are described. The polymer films can be used for preventing adhesions following surgery and/or delivering therapeutic agents. | 03-19-2015 |
20150079329 | METHOD AND APPARATUS FOR PRODUCING LARGE, SINGLE-CRYSTALS OF ALUMINUM NITRIDE - Bulk single crystals of AlN having a diameter greater than about 25 mm and dislocation densities of about 10,000 cm | 03-19-2015 |
20150099085 | PIEZOELECTRIC CERAMIC COMPOSITION - This invention provides for a piezoelectric ceramic composition having a lead-free alkaline niobate piezoelectric ceramic composition with a favorable piezoelectric property. This invention refers to a piezoelectric ceramic composition | 04-09-2015 |
20150110987 | FREE-STANDING NON-PLANAR POLYCRYSTALLINE SYNTHETIC DIAMOND COMPONENTS AND METHOD OF FABRICATION - A free-standing non-planar polycrystalline CVD synthetic diamond component which comprises a nucleation face and a growth face, the nucleation face comprising smaller grains than the growth face, the nucleation face having a surface roughness R | 04-23-2015 |
20150328831 | ADHESIVE ATTACHMENT DISCS - The present invention is directed to synthetic attachment discs made from adhesive nanofibers and/or microfibers that are capable of attaching long fibers to a wide variety of surfaces, and related methods for forming and using them. The synthetic attachment discs of the present invention use very little material relative to prior art systems, while producing a very strong attachment force. Experimental and theoretical evidence are provided to confirm the advantages of thousands of micron-size ‘staple-pins’ and their low peeling angles to enhance the adhesive forces required to peel the synthetic attachment discs. The present invention provides a unique strategy for designing new adhesives that use very little material for various biomedical and material science applications. | 11-19-2015 |
20160020284 | REUSABLE NITRIDE WAFER, METHOD OF MAKING, AND USE THEREOF - Techniques for processing materials for manufacture of gallium-containing nitride substrates are disclosed. More specifically, techniques for fabricating and reusing large area substrates using a combination of processing techniques are disclosed. The methods can be applied to fabricating substrates of GaN, AlN, InN, InGaN, AlGaN, and AlInGaN, and others. Such substrates can be used for a variety of applications including optoelectronic devices, lasers, light emitting diodes, solar cells, photo electrochemical water splitting and hydrogen generation, photo detectors, integrated circuits, transistors, and others. | 01-21-2016 |
20160068994 | METHOD FOR PRODUCING A VANADIUM-DOPED SILICON CARBIDE VOLUME MONOCRYSTAL, AND VANADIUM-DOPED SILICON CARBIDE SUBSTRATE - A silicon-carbide volume monocrystal is produced with a specific electrical resistance of at least 10 | 03-10-2016 |
20160075090 | 3D PRINTING WITH CUSTOM SURFACE REFLECTANCE - A method for fabricating custom surface reflectance and spatially-varying bi-directional reflectance distribution functions (BDRFs or svBRDFs). The 3D printing method optimizes micro-geometry to produce a normal distribution function (NDF) that can be printed on surfaces with a 3D printer. Particularly, the method involves optimizing the micro-geometry for a wide range of analytic NDFs and simulating the effective reflectance of the resulting surface. Using the results of the simulation, the appearance of an input svBRDF can be reproduced. To this end, the micro-geometry is optimized in a data-driven fashion and distributed on the surface of the printed object. The methods were demonstrated to allow 3D printing svBRDF on planar samples with current 3D printing technology even with a limited set of printing materials, and the described methods have been shown to be naturally extendable to printing svBRDF on arbitrary shapes or 3D objects. | 03-17-2016 |
20160087192 | SILICON SUBSTRATE HAVING FERROELECTRIC FILM ATTACHED THERETO - A residual stress in a PZT type ferroelectric film | 03-24-2016 |
20160101594 | SELF-TRANSFORMING STRUCTURES - A self-transforming structure is formed from a flexible, fibrous composite having a weave pattern of fibers woven at intersecting angles, the weave pattern having a boundary and one or more axes for the fibers, and an added material coupled to the flexible, fibrous composite to form a structure, wherein the flexible, fibrous composite and the added material have different expansion or contraction rates in response to an external stimulus to cause the structure to self-transform, and wherein the added material has a grain pattern oriented relative the weave pattern of the flexible, fibrous composite. Applications of the self-transforming structures include aviation, automotive, apparel/footwear, furniture, and building materials. One particular example is for providing adaptive control of fluid flow, such as in a jet engine air inlet. | 04-14-2016 |
20160108551 | METHODS FOR PRODUCING LOW OXYGEN SILICON INGOTS - An method for producing a silicon ingot includes melting polycrystalline silicon in a crucible enclosed in a vacuum chamber to form a melt, generating a cusped magnetic field within the vacuum chamber, dipping a seed crystal into the melt, withdrawing the seed crystal from the melt to pull a single crystal that forms the silicon ingot, wherein the silicon ingot has a diameter greater than about 150 millimeters (mm), and simultaneously regulating a plurality of process parameters such that the silicon ingot has an oxygen concentration less than about 5 parts per million atoms (ppma). The plurality of process parameters include a wall temperature of the crucible, a transport of silicon monoxide (SiO) from the crucible to the single crystal, and an evaporation rate of SiO from the melt. | 04-21-2016 |
20160128811 | PROSTHETIC PREFORM FOR PRODUCING A DENTAL PROSTHETIC BODY - To produce a dental prosthetic body for an upper or lower jaw prosthesis, a prosthetic preform is provided, the prosthetic preform having approximately the same shape as the prosthetic body. As a result, a high quality prosthetic body can be produced and customized, for example, by milling the prosthetic prebody. | 05-12-2016 |
20160130725 | Highly Twinned, Oriented Polycrystalline Diamond Film and Method of Manufacture Thereof - In a method of chemical vapor deposition (CVD) growth of a polycrystalline diamond film in a CVD reactor, a gas mixture of gaseous hydrogen and a gaseous hydrocarbon is introduced into the CVD reactor. A plasma formed from the gas mixture is maintained above a surface of a conductive substrate disposed in the CVD reactor and causes a polycrystalline diamond film to grow on the surface of the conductive substrate. A temperature T at the center of the polycrystalline diamond film is controlled during growth of the polycrystalline diamond film. The CVD grown polycrystalline diamond film includes diamond crystallites that can have a percentage of orientation along a [110] diamond lattice direction ≧70% of the total number of diamond crystallites forming the polycrystalline diamond film. | 05-12-2016 |
20160163579 | METHOD FOR MANUFACTURING LAMINATE, METHOD FOR MANUFACTURING SEALED SUBSTRATE LAMINATE, SEALED SUBSTRATE LAMINATE, AND SEALED SUBSTRATE - A laminate manufactured by forming a step difference in a substrate by grinding a periphery edge portion to have such a size that a surface on the inner side of the step difference can be housed in a cavity of a die, and then laminating the substrate, an adhesive layer, a release layer, and a support plate in this order such that the surface on the inner side of the step difference of the substrate faces the support plate. | 06-09-2016 |
20160168808 | Temporary Reusable Retroreflective Raised Pavement Marker | 06-16-2016 |
20160186361 | NITRIDE SEMICONDUCTOR CRYSTAL, MANUFACTURING METHOD AND MANUFACTURING EQUIPMENT - A nitride semiconductor crystal has a diameter of four inches or more and is warped to have a curvature radius of 100 m or more, and has an impurity concentration of 1×10 | 06-30-2016 |