Entries |
Document | Title | Date |
20080248608 | FRONT SIDE ELECTRICAL CONTACT FOR PHOTODETECTOR ARRAY AND METHOD OF MAKING SAME - A photodiode includes a semiconductor having front and backside surfaces and first and second active layers of opposite conductivity, separated by an intrinsic layer. A plurality of isolation trenches filled with conductive material extend into the first active layer, dividing the photodiode into a plurality of cells and forming a central trench region in electrical communication with the first active layer beneath each of the cells. Sidewall active diffusion regions extend the trench depth along each sidewall and are formed by doping at least a portion of the sidewalls with a dopant of first conductivity. A first contact electrically communicates with the first active layer beneath each of the cells via the central trench region. A plurality of second contacts each electrically communicate with the second active layer of one of the plurality of cells. The first and second contacts are formed on the front surface of the photodiode. | 10-09-2008 |
20080254567 | Thick film conductive composition and processe for use in the manufacture of semiconductor device - The present invention is directed to a thick film conductive composition comprising: a) electrically conductive silver powder; b) ZnO powder; c) lead-free glass frits wherein based on total glass frits: Bi | 10-16-2008 |
20080274583 | THROUGH-WAFER VIAS - A through-wafer via structure and method for forming the same. The through-wafer via structure includes a wafer having an opening and a top wafer surface. The top wafer surface defines a first reference direction perpendicular to the top wafer surface. The through-wafer via structure further includes a through-wafer via in the opening. The through-wafer via has a shape of a rectangular plate. A height of the through-wafer via in the first reference direction essentially equals a thickness of the wafer in the first reference direction. A length of the through-wafer via in a second reference direction is at least ten times greater than a width of the through-wafer via in a third reference direction. The first, second, and third reference directions are perpendicular to each other. | 11-06-2008 |
20080299700 | METHOD FOR FABRICATING PHOTODIODE - A method of fabricating photodiode includes: a substrate comprising a well is provided, next, a first doping region is formed in the well, following that a conductive layer is formed on the surface of the first doping region by an epitaxial growth process, meanwhile, the conductive layer is in-situ doped to form a second doping region in the conductive layer. The method for fabricating the photodiode in the present invention can prevent the lattice structure from being damaged during the high dozes implantation process. Therefore, the dark current can be reduced and the sensitivity of the photodiode will be increased. | 12-04-2008 |
20090068787 | SOLID STATE IMAGE PICKUP DEVICE AND METHOD FOR MANUFACTURING THE SAME - A method for manufacturing a solid state image pickup device in which a semiconductor substrate includes a pixel region where a plurality of pixels are arranged, each pixel including a signal charge accumulating portion and a transistor, and a pixel well of a first conductive type shared by the respective pixels, the method comprising: (a) a first step of forming a first impurity doped region by ion-implanting an impurity of the first conductive type to a surface of the semiconductor substrate together with the pixel well at a surface density of 1×10 | 03-12-2009 |
20090081823 | ELECTROFORMED STENCILS FOR SOLAR CELL FRONT SIDE METALLIZATION - A method for providing metallization upon a semiconductor substrate utilizing a stencil having at least one aperture extending from the contact side to the fill side, the contact side of the stencil being substantially flat and forming a sharp edge with a wall of the at least one aperture, the at least one aperture being tapered such that an area of a cross-section of the at least one aperture at the fill side is larger than an area of the cross-section of the at least one aperture at the contact side. A method of forming a stencil for depositing metallization lines on a semiconductor substrate is also disclosed. | 03-26-2009 |
20090093081 | Process of phosphorus diffusion for manufacturing solar cell - This invention discloses a process of phosphorus diffusion for manufacturing solar cell, comprising annealing a mono-crystalline silicon wafer in a nitrogen atmosphere at 900-950° C. for twenty to thirty minutes, carrying oxidation treatment in a hydrogen chloride atmosphere at 850-1050° C. to form a 10 to 30 nm thick oxide layer on the surface of said silicon wafer, diffusing from a phosphorus source at 850-900° C., until a block resistance of a material surface is controlled at 40 to 50 ohms, and the junction depth is at 0.2 to 1.0 microns, and annealing in a nitrogen atmosphere at 700-750° C. for thirty to sixty minutes to complete the phosphorus diffusion of said mono-crystalline silicon wafer. This invention allows the use of 4 N˜5 N mono-crystalline silicon as the material for manufacturing solar cells, so, the low purity material such as metallurgical silicon can be used, which greatly reduces the cost of materials. | 04-09-2009 |
20090142880 | Solar Cell Contact Formation Process Using A Patterned Etchant Material - Embodiments of the invention contemplate the formation of a high efficiency solar cell using novel methods to form the active region(s) and the metal contact structure of a solar cell device. In one embodiment, the methods include the use of various etching and patterning processes that are used to define point contacts through a blanket dielectric layer covering a surface of a solar cell substrate. The method generally includes depositing an etchant material that enables formation of a desired pattern in a dielectric layer through which electrical contacts to the solar cell device can be formed. | 06-04-2009 |
20090148978 | PROCESSES FOR FORMING PHOTOVOLTAIC CONDUCTIVE FEATURES FROM MULTIPLE INKS - Photovoltaic conductive features and processes for forming photovoltaic conductive features are described. The process comprises (a) providing a substrate comprising a passivation layer disposed on a silicon layer; (b) depositing a surface modifying material onto at least a portion of the passivation layer; (c) depositing a composition comprising at least one of metallic nanoparticles comprising a metal or a metal precursor to the metal onto at least a portion of the substrate; and (d) heating the composition such that it forms at least a portion of a photovoltaic conductive feature in electrical contact with the silicon layer, wherein at least one of the composition or the surface modifying material etches a region of the passivation layer. When the surface modifying material is a UV-curable material, the process comprises the additional step of curing the UV-curable material. | 06-11-2009 |
20090162972 | METALLIZATION CONTACT STRUCTURES AND METHODS FOR FORMING MULTIPLE-LAYER ELECTRODE STRUCTURES FOR SILICON SOLAR CELLS - Metallization contact structures and methods for forming a multiple-layer electrode structure on a solar cell include depositing a conductive contact layer on a semiconductor substrate and depositing a metal bearing ink onto a portion of the conductive contact layer, wherein the exposed portions of the conductive contact layer are adjacent to the metal bearing ink. The conductive contact layer is patterned by removing the exposed portions of the conductive contact layer from the semiconductor substrate. The metal bearing ink is aligned with one or more openings in a dielectric layer of the semiconductor substrate and with unexposed portions of the conductive contact layer. The unexposed portions of the conductive contact layer are interposed between the metal bearing ink and the dielectric layer of the semiconductor substrate such that the conductive contact layer pattern is aligned with metal bearing ink. The semiconductor substrate is thermally processed to form a current carrying metal gridline by sintering the metal bearing ink. | 06-25-2009 |
20090170234 | Image Sensor and Method for Manufacturing Thereof - Disclosed is a method for manufacturing an image sensor. The method includes a process for removing foreign matter from a non-device area of a wafer before forming contacts in a device area of the wafer. According to an embodiment, an insulating layer formed in the non-device area is removed by performing a first process with respect to the non-device area. Then, a contact can be formed in the insulating layer in the device area. | 07-02-2009 |
20090170235 | Method for Manufacturing Image Sensor - A method for manufacturing an image sensor includes forming a photolithography key in a scribe lane of a first substrate over which circuitry is formed in an active region. A photodiode is formed on an active region of a second substrate. The second substrate is bonded to the first substrate such that the photodiode is electrically connected to the circuitry. The photolithography key in the scribe lane of the first substrate is opened. A pattern is formed on the active region of the bonded second substrate using the opened photolithography key on/over the first substrate. | 07-02-2009 |
20090170236 | MANUFACTURING METHOD OF IMAGE SENSOR - A manufacturing method of an image sensor includes forming lower electrodes over a semiconductor substrate having metal wires and an interlayer insulating film formed thereover; removing a photoresist polymer produced by the formation of the lower electrodes by performing a primary treatment using a first substance; and then removing an electrode polymer produced by the formation of the lower electrodes by performing a secondary treatment using a second substance. | 07-02-2009 |
20090176330 | Photodiode Having Increased Proportion of Light-Sensitive Area to Light-Insensitive Area - A photodiode having an increased proportion of light-sensitive area to light-insensitive area includes a semiconductor having a backside surface and a light-sensitive frontside surface. The semiconductor includes a first active layer having a first conductivity, a second active layer having a second conductivity opposite the first conductivity, and an intrinsic layer separating the first and second active layers. A plurality of isolation trenches are arranged to divide the photodiode into a plurality of cells. Each cell has a total frontside area including a cell active frontside area sensitive to light and a cell inactive frontside area not sensitive to light. The cell active frontside area forms at least 95 percent of the cell total frontside area. A method of forming the photodiode is also disclosed. | 07-09-2009 |
20090209060 | PHOTOELECTRIC CONVERTING FILM STACK TYPE SOLID-STATE IMAGE PICKUP DEVICE, AND METHOD OF PRODUCING THE SAME - A solid-state image pickup device comprises: a plurality of photoelectric converting films stacked via an insulating layer, the photoelectric converting films being above a semiconductor substrate in which a signal read circuit is formed, in which each of the photoelectric converting films is sandwiched between a pixel electrode film and an opposing electrode film, wherein the pixel electrode film of an upper one of the photoelectric converting films is connected to the signal read circuit by a longitudinal line passing through a lower one of the photoelectric converting films, and, in the longitudinal line, a passing portion which passes through the lower photoelectric converting film is formed by filling an opening with a conductive material, the opening being formed from a same plane of the pixel electrode film stacked on the lower photoelectric converting film to an upper end face of the insulating layer stacked above the photoelectric converting film. | 08-20-2009 |
20090221112 | Method for Metallizing Semiconductor Elements and Use Thereof - The present invention relates to a method for metallizing semiconductor components in which aluminium is used. In particular in the case of products in which the process costs play a big part, such as e.g. solar cells based on silicon, a cost advantage can be achieved with the invention. In addition, the present invention relates to the use of the method, for example in the production of solar cells. | 09-03-2009 |
20090239330 | METHODS FOR FORMING COMPOSITE NANOPARTICLE-METAL METALLIZATION CONTACTS ON A SUBSTRATE - A method for forming a contact to a substrate is disclosed. The method includes providing a substrate, the substrate being doped with a first dopant; and diffusing a second dopant into at least a first side of the substrate to form a second dopant region, the first side further including a first side surface area. The method also includes forming a dielectric layer on the first side of the substrate. The method further includes forming a set of composite layer regions on the dielectric layer, wherein each composite layer region of the set of composite layer regions further includes a set of Group IV semiconductor nanoparticles and a set of metal particles. The method also includes heating the set of composite layer regions to a first temperature, wherein at least some composite layer regions of the set of composite layer regions etch through the dielectric layer and form a set of contacts with the second dopant region. | 09-24-2009 |
20090239331 | METHODS FOR FORMING MULTIPLE-LAYER ELECTRODE STRUCTURES FOR SILICON PHOTOVOLTAIC CELLS - Methods for forming a photovoltaic cell electrode structure, wherein the photovoltaic cell includes a semiconductor substrate having a passivation layer thereon, includes providing a plurality of contact openings through the passivation layer to the semiconductor substrate, selectively plating a contact metal into the plurality of contact openings to deposit the contact metal, depositing a metal containing material on the deposited contact metal, and firing the deposited contact metal and the deposited metal containing material. The metal containing material may include a paste containing a silver or silver alloy along with a glass frit and is substantially free to completely free of lead. The methods may also use light activation of the passivation layer or use seed layers to assist in the plating. | 09-24-2009 |
20090239332 | Bifacial Cell With Extruded Gridline Metallization - Provided is a bifacial photovoltaic arrangement comprising a bifacial cell which included a semiconductor layer having a first surface and a second surface, a first passivation layer formed on the first surface of the semiconductor layer and a second passivation layer formed on the second surface of the semiconductor layer, and a plurality of metallizations formed on the first and second passivation layers and selectively connected to the semiconductor layer. At least some of the metallizations on the bifacial photovoltaic arrangement comprising an elongated metal structure having a relatively small width and a relatively large height extending upward from the first and second passivation layers. | 09-24-2009 |
20090263931 | THINNED IMAGE SENSOR WITH TRENCH-INSULATED CONTACT TERMINALS - The invention relates to the fabrication of thinned substrate image sensors, and notably color image sensors. After the fabrication steps carried out from the front face of a silicon substrate the front face is transferred onto a substrate. The silicon is thinned, and the connection terminals are produced by the rear face. A multiplicity of localized contact holes are opened through the thinning silicon, in the location of a connection terminal. The holes exposing a first conductive layer ( | 10-22-2009 |
20090269877 | METHOD AND APPARATUS FOR ACHIEVING LOW RESISTANCE CONTACT TO A METAL BASED THIN FILM SOLAR CELL - A system and method of forming a thin film solar cell with a metallic foil substrate are provided. After forming a semiconductor absorber film over the front surface of the metallic foil substrate a back surface of the metallic foil substrate is treated using a material removal process to form a treated back surface in a process chamber. In one embodiment, the material removal process is performed while depositing a transparent conductive layer over the semiconductor absorber film in the process chamber. | 10-29-2009 |
20090269878 | EMBEDDED WAVEGUIDE DETECTORS - A method of fabricating a detector that involves: forming a trench in a substrate, the substrate having an upper surface; forming a first doped semiconductor layer on the substrate and in the trench; forming a second semiconductor layer on the first doped semiconductor layer and extending into the trench, the second semiconductor layer having a conductivity that is less than the conductivity of the first doped semiconductor layer; forming a third doped semiconductor layer on the second semiconductor layer and extending into the trench; removing portions of the first, second and third layers that are above a plane defined by the surface of the substrate to produce an upper, substantially planar surface and expose an upper end of the first doped semiconductor layer in the trench; forming a first electrical contact to the first semiconductor doped layer; and forming a second electrical contact to the third semiconductor doped layer. | 10-29-2009 |
20090286349 | SOLAR CELL SPIN-ON BASED PROCESS FOR SIMULTANEOUS DIFFUSION AND PASSIVATION - A thin silicon solar cell having a high quality spin-on dielectric layer is described. Specifically, the solar cell may be fabricated from a crystalline silicon wafer having a thickness from 50 to 500 micrometers. A first dielectric layer is applied to the rear surface of the silicon wafer using a spin-on process. A high temperature furnace operation provides simultaneous emitter diffusion and front and rear surface passivation. During this high temperature operation, the front emitter is formed, the rear spin-on dielectric layer is cured, and the front dielectric layer is thermally grown. Barrier layers are formed on the dielectric layers. Openings are made in the barrier layers. Contacts are formed in the openings and on the back surface barrier layer. | 11-19-2009 |
20090305456 | Method of Manufacturing Back Junction Solar Cell - A method of manufacturing a back junction solar cell comprises the steps of forming a first diffusion mask ( | 12-10-2009 |
20090305457 | SOLAR CELL, SOLAR MODULE AND SYSTEM AND FABRICATION METHOD THEREOF - A solar cell having an improved structure of rear surface includes a p-type doped region, a dense metal layer, a loose metal layer, at least one bus bar opening, and solderable material on or within the bus bar opening. The solderable material contacts with the dense aluminum layer. The improved structure in rear surface increases the light converting efficiency, and provides a good adhesion between copper ribbon and solar cell layer thereby providing cost advantages and reducing the complexity in manufacturing. A solar module and solar system composed of such solar cell are also disclosed. | 12-10-2009 |
20090311825 | METALLIZATION METHOD FOR SOLAR CELLS - A method for the production of a contact structure of a solar cell allows p-contacts and n-contacts to be produced simultaneously. | 12-17-2009 |
20090317940 | PASTE FOR SOLAR CELL ELECTRODE AND SOLAR CELL - In a paste for a solar cell light-receiving surface electrode including silver particles, glass frit, resin binder, and thinner, silver particles with a specific surface of 0.20-0.60 m | 12-24-2009 |
20100003781 | ROLL-TO-ROLL NON-VACUUM DEPOSITION OF TRANSPARENT CONDUCTIVE ELECTRODES - Methods and devices are provided for improved photovoltaic devices. Non-vacuum deposition of transparent conductive electrodes in a roll-to-roll manufacturing environment is disclosed. In one embodiment, a method is provided for forming a photovoltaic device. The method comprises processing a precursor layer in one or more steps to form a photovoltaic absorber layer; depositing a smoothing layer to fill gaps and depression in the absorber layer to reduce a roughness of the absorber layer; adding an insulating layer over the smooth layer; and forming a web-like layer of conductive material over the insulating layer. By way of nonlimiting example, the web-like layer of conductive material comprises a plurality of carbon nanotubes. In some embodiments, the absorber layer is a group IB-IIIA-VIA absorber layer. | 01-07-2010 |
20100029039 | MONO-SILICON SOLAR CELLS - A method for producing a backside contact of a single p-n junction photovoltaic solar cell is provided. The method includes the steps of: providing a p-type substrate having a back surface; providing a plurality of p+ diffusion regions at the back surface of the substrate; providing a plurality of n+ diffusion regions at the back surface of the substrate in an alternate pattern with the p+ diffusion regions; providing an oxide layer over the p+ and n+ regions; providing an insulating layer over the back surface of the substrate; providing at least one first metal contact at the back surface for the p+ diffusion regions; and providing at least one second metal contact at the back surface for the n+ diffusion regions. | 02-04-2010 |
20100055828 | PROCESS AND PASTE FOR CONTACTING METAL SURFACES - For production of an electrically conductive or thermally conductive connection for contacting two elements, an elemental metal, in particular silver, is formed from a metal compound, in particular a silver compound, between the contact surfaces. In this production, the processing temperature for the use of a silver solder can be decreased below 240° C. and the processing pressure can be reduced to normal pressure. A contacting paste for this purpose contains a metal compound, in particular a silver compound, which decomposes below 400° C. while forming elemental silver. As a result, a metal is generated in situ from a chemical compound for producing a contact, which is usable above the temperature necessary for its production. | 03-04-2010 |
20100093128 | METHOD FOR MANUFACTURING IMAGE SENSOR - In a method for manufacturing an image sensor, readout circuitry is formed in a first substrate. A first interlayer dielectric is formed over the first substrate. An interconnection is formed at the first interlayer dielectric, and the interconnection is electrically connected to the readout circuitry. A second interlayer dielectric is formed over the interconnection. A via hole exposing an upper side of the interconnection is formed by etching a portion of the second interlayer dielectric using a photoresist pattern as an etch mask. A contact plug is formed in the via hole, while leaving the photoresist pattern. The photoresist pattern is then removed. An image sensing device is formed over the contact plug. | 04-15-2010 |
20100120194 | METHOD OF MANUFACTURING IMAGE SENSOR - A method of manufacturing an image sensor includes forming an interlayer dielectric including a metal line on a semiconductor substrate, forming an image sensing part, over which a first doped layer and a second doped layer are stacked, over the interlayer dielectric, forming a via hole exposing the metal line, the via hole passing through the image sensing part and the interlayer dielectric, forming a first barrier layer and a second barrier layer over surfaces defining the via hole, forming a contact plug inside the via hole to have a first height equal to that of the first doped layer, thereby exposing the second barrier layer over the second doped layer inside the via hole, performing a wet etch process on the exposed second barrier layer to form a second barrier pattern having the same height as that of the contact plug, and performing a wet etch process on the first barrier layer to expose the second doped layer within the via hole, thereby forming a first barrier pattern. | 05-13-2010 |
20100120195 | METHOD FOR MANUFACTURING IMAGE SENSOR - In a method for forming an image sensor, an interlayer dielectric may be formed over a semiconductor substrate. The interlayer dielectric may include an interconnection. A via hole may be formed through the interlayer dielectric by performing an etching process on the semiconductor substrate. The via hole exposes the interconnection. A first cleaning process and a second cleaning process may be performed on the semiconductor substrate including the via hole. The contact plug may be formed by filing a metal material in the via hole. The image sensing unit, with a first doping layer and a second doping layer stacked therein may be formed over the interlayer dielectric including the interconnection and the contact plug. Here, the first and second cleaning processes include removing residues formed over a sidewall of the via hole through the etching process. | 05-13-2010 |
20100136737 | METHOD OF MAKING CMOS IMAGE SENSOR-HYBRID SILICIDE - Techniques for manufacturing a CMOS image sensor are provided. A semiconductor substrate is provided, and at least one isolation region can be formed between a periphery region of the substrate and a photo-sensing region of the substrate. A first well in the periphery region and a second well in the photo-sensing region of the substrate are formed. A third well associated with a photodiode is also formed. A gate oxide layer, polysilicon layer, and first metal layer are respectively deposited. The polysilicon layer and first metal layer are etched to form an least one gate in the photo-sensing region and at least one gate in the periphery region. At least two doped regions in the first well are formed, as well as a doped region in the second well. A silicide block layer is deposited over the photo-sensing region of the substrate. A second metal layer is deposited at least over the periphery region after deposition of the silicide block. The substrate is exposed to a thermal environment to form silicide. The second metal layer is removed by etching. | 06-03-2010 |
20100136738 | SOLID-STATE IMAGING DEVICE, SOLID-STATE IMAGING APPARATUS AND METHODS FOR MANUFACTURING THE SAME - To arrange diffusion-inhibitory films | 06-03-2010 |
20100178726 | Conductive Paste, Solar Cell Manufactured Using Conductive Paste, Screen Printing Method and Solar Cell Formed Using Screen Printing Method - The conductive paste contains a conductive metal powder and an organic vehicle. The conductive paste has characteristics that the viscosity falls within the range of 200 Pa·s to 350 Pa·s when the shear rate of 10 s | 07-15-2010 |
20100190290 | SOLAR CELL PATTERNING AND METALLIZATION - Embodiments of the present invention generally provide methods for forming conductive structures on the surfaces of a solar cell. In one embodiment, conductive structures are formed on the front surface of a solar cell by depositing a sacrificial polymer layer, forming patterned lines in the sacrificial polymer via a fluid jet, depositing metal layers over the front surface of the solar cell, and performing lift off of the metal layers deposited over the sacrificial polymer by dissolving the sacrificial polymer with a water based solvent. In another embodiment, conductive structures are formed on the back surface of a solar cell by depositing a sacrificial polymer layer, forming patterned lines in the sacrificial polymer via a fluid jet, depositing a metal layer over the back surface of the solar cell, and performing lift off of the metal layer deposited over the sacrificial polymer by dissolving the sacrificial polymer with a water based solvent, and completing selective metallization of the remaining metal lines. | 07-29-2010 |
20100203670 | SEMICONDUCTOR DEVICE FABRICATION METHOD - A method of fabricating a semiconductor device, comprises steps of forming a common contact hole for a first conductivity-type region and a second conductivity-type region, implanting an impurity in at least one of the first conductivity-type region and the second conductivity-type region, and forming a shared contact plug by filling an electrical conducting material in the contact hole, wherein in the implanting step, an impurity is implanted in at least one of the first conductivity-type region and the second conductivity-type region such that the first conductivity-type region and the shared contact plug are brought into ohmic contact with each other, and the second conductivity-type region and the shared contact plug are brought into ohmic contact with each other. | 08-12-2010 |
20100203671 | SOLID-STATE IMAGING DEVICE AND METHOD FOR MAKING THE SAME - A solid-state imaging device includes a semiconductor substrate, one or more wiring interlayer films disposed on or above the semiconductor substrate, and one or more metal wires embedded in the wiring interlayer films. The one or more wiring interlayer films are composed of a diffusion preventing material that prevents the diffusion of the metal wire. | 08-12-2010 |
20100210066 | ELECTRODE PASTE FOR SOLAR CELL AND SOLAR CELL ELECTRODE USING THE PASTE - An electrode paste for a solar cell comprising electrically conductive particles, lead-free glass frit, a resin binder and zinc oxide particles, wherein zinc oxide particles having a specific surface area of 6 m | 08-19-2010 |
20100227433 | ELECTROCONDUCTIVE THICK FILM COMPOSITION, ELECTRODE, AND SOLAR CELL FORMED THEREFROM - The electroconductive thick film paste of the present invention is a silver electroconductive paste, which includes silver particles, glass particles, and an organic vehicle, and is used in an electrode for connecting a back face terminal on the silicon substrate of a solar cell, and is characterized by the fact that the average particle diameter of said silver particles is 3.0-15.0 μm. The present invention is further directed to an electrode formed from the composition as detailed above and a solar cell comprising said electrode. | 09-09-2010 |
20100233843 | Formation of stretchable photovoltaic devices and carriers - Formation of stretchable photovoltaic devices and carriers is described. In some examples, a formation method includes: forming a stretchable carrier including a stretchable part having a given length, the given length being operable to change in response to a force being applied to the stretchable carrier; depositing a photovoltaic cell over a surface of the stretchable carrier; and interconnecting the photovoltaic cell to output terminals. | 09-16-2010 |
20100267194 | METHOD FOR APPLYING ELECTRICAL CONTACTS ON SEMICONDUCTING SUBSTRATES, SEMICONDUCTING SUBSTRATE AND USE OF THE METHOD - An electrical contact is applied on a semiconducting substrate, such as a solar cell. A layer of metallic powder is applied on the substrate. A laser beam is the guided over the substrate for local sintering and/or melting of the metallic powder. The non-sintered or non-melted metallic powder is then removed from the substrate. | 10-21-2010 |
20100273289 | METHOD OF FABRICATING A BACKSIDE ILLUMINATED IMAGE SENSOR - A method of forming a backside illuminated image sensor using an SOI substrate including a handle substrate, an insulator formed on the handle substrate, and a semiconductor layer formed on the insulator. A sensor element is formed on the semiconductor layer, a dielectric layer is formed overlying the semiconductor layer and the sensor element; and an interconnection structure is formed in the dielectric layer to electrically connect the sensor element. A carrier substrate is forming the dielectric layer. After flipping, the handle substrate is removed to expose the insulator layer. | 10-28-2010 |
20100279458 | PROCESS FOR MAKING PARTIALLY TRANSPARENT PHOTOVOLTAIC MODULES - A process for making a partially transparent photovoltaic cell or a partially transparent photovoltaic module comprising series-connected or parallel-connected photovoltaic cells comprises the step of forming a patterned back electrode(s) by screen printing, jet printing, roll-to-roll processing or depositing through a shadow mask with openings. The pattern of the back electrode is determined at the same time when the back electrode is disposed, such that the complexity and cost of the process can be reduced. | 11-04-2010 |
20100279459 | METHOD FOR REDUCING CONTACT RESISTANCE OF CMOS IMAGE SENSOR - A method for performing a CMOS Image Sensor (CIS) silicide process is provided to reduce pixel contact resistance. In one embodiment, the method comprises forming a Resist Protect Oxide (RPO) layer on the CIS, forming a Contact Etch Stop Layer (CESL), forming an Inter-Layer Dielectric (ILD) layer, performing contact lithography/etching, performing Physical Vapor Deposition (PVD) at a pixel contact hole area, annealing for silicide formation at pixel contact hole area, performing contact filling, and defining the first metal layer. The Resist Protect Oxide (RPO) layer can be formed without using a photo mask of Cell Resist Protect Oxide (CIRPO) photolithography for pixel array and/or without silicide process at pixel array. The method can include implanting N+ or P+ for pixel contact plugs at the pixel contact hole area. The contact filling can comprise depositing contact glue plugs and performing Chemical Mechanical Polishing (CMP). | 11-04-2010 |
20100285631 | METHOD OF SELECTIVELY DOPING A SEMICONDUCTOR MATERIAL FOR FABRICATING A SOLAR CELL - The present disclosure provides a method of selectively doping a semiconductor material for fabricating a solar cell. The method comprises forming at least one angled groove in the semiconductor material and forming a diffusion barrier on the semiconductor material. The diffusion barrier comprises a diffusion barrier material that is selected so that diffusing of a dopant material through the diffusion barrier is reduced. The method also comprises doping the semiconductor material by exposing the semiconductor material to the dopant material in a manner such that a region of the semiconductor material that is covered by the diffusion barrier has a predetermined first dopant concentration. In addition, the method comprises forming an electrical contact within the at least one angled groove after exposing the semiconductor material to the dopant material. The method is conducted so that a surface area of the semiconductor material within the at least one groove is substantially free from diffusion barrier material and has a second dopant concentration that is higher than the first dopant concentration. | 11-11-2010 |
20100297807 | CMOS IMAGER HAVING A NITRIDE DIELECTRIC - An imaging device formed as a CMOS semiconductor integrated circuit includes a nitrogen containing insulating material beneath a photogate. The nitrogen containing insulating material, preferably be one of a silicon nitride layer, an ONO layer, a nitrode/oxide layer and an oxide/nitrode layer. The nitrogen containing insulating layer provides an increased capacitance in the photogate region, higher breakdown voltage, a wider dynamic range and an improved signal to noise ratio. The invention also provides a method for fabricating a CMOS imager containing the nitrogen containing insulating layer. | 11-25-2010 |
20100311203 | Passivation process for solar cell fabrication - Embodiments of the invention contemplate the formation of a high efficiency solar cell using a novel plasma oxidation process to form a passivation film stack on a surface of a solar cell substrate. In one embodiment, the methods include providing a substrate having a first type of doping atom on a back surface of the substrate and a second type of doping atom on a front surface of the substrate, plasma oxidizing the back surface of the substrate to form an oxidation layer thereon, and forming a silicon nitride layer on the oxidation layer. | 12-09-2010 |
20100311204 | METHOD FOR FORMING TRANSPARENT CONDUCTIVE OXIDE - Embodiments disclosed herein generally relate to a process of depositing a transparent conductive oxide layer over a substrate. The transparent oxide layer is sometimes deposited onto a substrate for later use in a solar cell device. The transparent conductive oxide layer may be deposited by a “cold” sputtering process. In other words, during the sputtering process, a plasma is ignited in the processing chamber which naturally heats the substrate. No additional heat is provided to the substrate during deposition such as from the susceptor. After the transparent conductive oxide layer is deposited, the substrate may be annealed and etched, in either order, to texture the transparent conductive oxide layer. In order to tailor the shape of the texturing, different wet etch chemistries may be utilized. The different etch chemistries may be used to shape the surface of the transparent conductive oxide and the etch rate. | 12-09-2010 |
20100317147 | METALLIZING DEVICE AND METHOD - A metallization device configured to metallize a semiconductor device, including: a closed enclosure of variable volume configured to contain a metallization paste, a screen for screen printing forming a wall of the enclosure integral with the other walls of the enclosure, configured to be in contact with the semiconductor device during its metallization, and a mechanism applying uniform pressure over a mobile sealed wall of the enclosure opposite to the wall formed by the printing screen and reducing the volume of the enclosure. The volume reduction of the enclosure is configured to cause the metallization paste to uniformly pass through the printing screen. | 12-16-2010 |
20100317148 | METHODS FOR MANUFACTURING A CONTACT GRID ON A PHOTOVOLTAIC CELL - Processes for fabricating a contact grid for a photovoltaic cell generally includes providing a photovoltaic cell having an antireflective coating disposed on a sun facing side, the photovoltaic cell comprising a silicon substrate having a p-n junction; soft stamping a pattern of a UV sensitive photoresist and/or polymer onto the antireflective coating; exposing the UV sensitive photoresist and/or polymer to ultraviolet radiation to cure the UV sensitive photoresist and/or polymer; etching the pattern to form openings in the antireflective coating that define the contact grid; stripping the UV sensitive photoresist and/or polymer; and depositing a conductive metal into the openings defined by the pattern. The metal based paste can be aluminum based, which can be annealed at a relatively low temperature. | 12-16-2010 |
20100330736 | METHOD OF MANUFACTURING SOLAR BATTERY - When a layered structure of a transparent electrode layer and a metal layer is formed as a back side electrode layer over a surface on a side opposite to a side of incidence of light of a thin film solar battery, a time when formation of the transparent electrode layer is completed and a time when formation of the metal layer is started are made to coincide for one substrate. | 12-30-2010 |
20110014743 | ALUMINUM THICK FILM COMPOSITION(S), ELECTRODE(S), SEMICONDUCTOR DEVICE(S), AND METHODS OF MAKING THEREOF - The present invention is directed to a thick film conductor composition comprised of (a) aluminum-containing powder; (b) one or more glass frit compositions; dispersed in (c) organic medium wherein at least one of said glass frit compositions has a softening point of less than 400° C. | 01-20-2011 |
20110020980 | THERMAL PRE-TREATMENT PROCESS FOR SODA LIME GLASS SUBSTRATE FOR THIN FILM PHOTOVOLTAIC MATERIALS - A method for fabricating a thin film solar cell includes providing a soda lime glass substrate comprising a surface region, treating the surface region with one or more cleaning process including an aqueous solution to remove one or more contaminants and/or particulates, and forming a lower electrode layer overlying the surface region. The method also includes performing a thermal treatment process to remove any residual water species to substantially less than a monolayer of water species from the lower electrode layer and soda lime glass substrate. The thermal treatment process changes a temperature of the soda lime glass substrate from a first temperature to a second temperature to pre-heat the soda lime glass substrate. Additionally, the method includes transferring the soda lime glass substrate, which has been preheated, to a deposition chamber and forming a layer of photovoltaic material overlying the lower electrode layer within the deposition chamber. | 01-27-2011 |
20110045631 | METHOD FOR MANUFACTURING ELECTRODES OF SOLAR CELL AND ELECTROCHEMICAL DEPOSITING APPARATUS - A method for manufacturing electrodes of solar cell and electrochemical depositing apparatus are disclosed. The method for manufacturing electrodes of solar cell is a method using the process of electrochemical depositing metal or metal alloy to form electrodes of solar cell. The method of the present invention can improve photoelectric conversion efficiency and reduce the production cost. The reaction time of the method is short and industrial waste liquid is treated easily. | 02-24-2011 |
20110045632 | Methods of Manufacturing Solid State Image Pickup Devices - A method of manufacturing a solid state image pickup device having a plurality of pixels each including a photoelectric conversion region for converting light into a signal charge, and a plurality of wiring layers including first and second wiring layers. The method includes steps of forming the first wiring layer as a pattern by dividing a desired pattern into a plurality of patterns, connecting the divided patterns, and exposing the plurality of patterns, and forming the second wiring layer as a pattern by batch exposure processing. A connecting position along which the divided patterns are connected is arranged in a pixel area in which the plurality of pixels are arranged. The wiring included in the first wiring layer is formed by a vertical direction wiring arranged in parallel with and not crossing the connecting position in the pixel area, and the wiring included in the second wiring layer is formed by a horizontal direction wiring arranged in parallel with and crossing the connecting position in the pixel area. | 02-24-2011 |
20110053312 | METHOD FOR THE CONTACT SEPARATION OF ELECTRICALLY-CONDUCTING LAYERS ON THE BACK CONTACTS OF SOLAR CELLS AND CORRESPONDING SOLAR CELL - A method for fabricating a solar cell comprising a semiconductor substrate is proposed where electrical contacting is made on the back side of the semiconductor substrate. The back side of the semiconductor substrate has locally doped regions. The adjacent regions exhibit different doping from the region. The two regions are initially coated with electrically conductive material over the entire area. So that the conductive material does not short-circuit the solar cell, the two regions are covered with a thin electrically insulating layer at least at the region boundaries. | 03-03-2011 |
20110065229 | Method of manufacturing back-surface electrode type solar cell - There is provided a method of manufacturing a back-surface electrode type solar cell. The method may include: forming a conductive metal thin film on a crystalline silicon wafer; forming plate-resistant partition walls on a top surface of the conductive metal thin film; forming a metal layer in a space between the plate-resistant partition walls and then removing the plate-resistant partition walls; and removing the conductive metal thin film that is exposed by removing the plate-resistant partition walls so as to expose the crystalline silicon wafer. | 03-17-2011 |
20110065230 | METHOD FOR MANUFACTURING SOLAR CELL - A method for manufacturing a solar cell including a substrate, a first electrode layer, a semiconductor layer, and a second electrode layer, includes forming a first sacrificial layer on a portion of a surface of the substrate; forming the first electrode layer on the substrate and on the first sacrificial layer; and dividing the first electrode layer by removing the first sacrificial layer and a portion of the first electrode layer formed on the first sacrificial layer. | 03-17-2011 |
20110065231 | PROCESS FOR PRODUCING A CONTACT AREA OF AN ELECTRONIC COMPONENT - A process for forming at least one local contact area of a substrate of an electrical component for contacting the contact area with a connector, in which the substrate, on the contact side, is provided with a sintered porous metal layer. To make available a mechanically durable, electrically faultless solderable contact area, it is proposed that the porous layer be compacted and/or removed in the contact area to be formed. | 03-17-2011 |
20110076796 | INTERMETAL STACK FOR USE IN A PHOTOVOLTAIC CELL - A donor silicon wafer may be bonded to a substrate and a lamina cleaved from the donor wafer. A photovoltaic cell may be formed from the lamina bonded to the substrate. An intermetal stack is described that is optimized for use in such a cell. The intermetal stack may include a transparent conductive oxide layer serving as a quarter-wave plate, a low resistance layer, an adhesion layer to help adhesion to the receiver element, and may also include a barrier layer to prevent or impede unwanted diffusion within the stack. | 03-31-2011 |
20110081745 | Method of Manufacturing Selective Emitter Solar Cell - The present disclosure uses ammonia plasma for nitrification and for further forming a barrier pattern on a substrate. Then, a selective emitter is fabricated by forming light doping and heavy doping at one time through diffusion into the substrate. Therein, a plurality of trenches for obtaining a front contact is formed at the same time on forming the barrier pattern. Thus, the fabrication process is simplified and the cost is reduced for fabricating a selective emitter solar cell. | 04-07-2011 |
20110086466 | CONTACT FABRICATION OF EMITTER WRAP-THROUGH BACK CONTACT SILICON SOLAR CELLS - Back contact solar cells including rear surface structures and methods for making same. The rear surface has small contact areas through at least one dielectric layer, including but not limited to a passivation layer, a nitride layer, a diffusion barrier, and/or a metallization barrier. The dielectric layer is preferably screen printed. Large grid areas overlay the dielectric layer. The methods provide for increasing efficiency by minimizing p-type contact areas and maximizing n-type doped regions on the rear surface of a p-type substrate. | 04-14-2011 |
20110092014 | SOLAR CELL INTERCONNECTION - Methods and devices for solar cell interconnection are provided. In one embodiment, the method includes physically alloying the ink metal to the underlying foil (hence excellent adhesion and conductivity with no pre-treatment), and by fusing the solid particles in the ink on the surface (eliminating any organic components) so that the surface is ideally suited for good conductivity and adhesion to an overlayer of finger ink, which is expected to be another adhesive. In some embodiments, contact resistance of conductive adhesives are known to be much lower on gold or silver than on any other metals. | 04-21-2011 |
20110097841 | Rear electrode structure for use in photovoltaic device such as CIGS/CIS photovoltaic device and method of making same - A photovoltaic device including a rear electrode which may also function as a rear reflector. In certain example embodiments of this invention, the rear electrode includes a metallic based reflective film that is oxidation graded, so as to be more oxided closer to a rear substrate (e.g., glass substrate) supporting the electrode than at a location further from the rear substrate. In other words, the rear electrode is oxidation graded so as to be less oxided closer to a semiconductor absorber of the photovoltaic device than at a location further from the semiconductor absorber in certain example embodiments. In certain example embodiments, the interior surface of the rear substrate may optionally be textured so that the rear electrode deposited thereon is also textured so as to provide desirable electrical and reflective characteristics. In certain example embodiments, the rear electrode may be of or include Mo and/or MoO | 04-28-2011 |
20110104850 | SOLAR CELL CONTACT FORMATION PROCESS USING A PATTERNED ETCHANT MATERIAL - Embodiments of the invention contemplate the formation of a high efficiency solar cell using novel methods to form the active region(s) and the metal contact structure of a solar cell device. In one embodiment, the methods include the use of various etching and patterning processes that are used to define point contacts through a blanket dielectric layer covering a surface of a solar cell substrate. The method generally includes depositing an etchant material that enables formation of a desired pattern in a dielectric layer through which electrical contacts to the solar cell device can be formed. | 05-05-2011 |
20110117694 | SOLAR CELL HAVING SPHERICAL SURFACE AND METHOD OF MANUFACTURING THE SAME - Provided is a solar cell having a spherical surface. The solar cell includes a substrate having a back contact layer formed thereon; a plurality of carbon nanoelectrodes formed on the back contact layer so as to cross the back contact layer at right angles; a p-type junction layer formed to have a plurality of spheres which surround the plurality of carbon nanoelectrodes; an n-type junction layer and a transparent electrode layer that are sequentially laminated on the p-type junction layer; a first electrode formed on one side of the top surface of the back contact layer; and a second electrode formed on one side of the top surface of the transparent layer. | 05-19-2011 |
20110124151 | PHOTOVOLTAIC DEVICE AND METHOD FOR MANUFACTURING THE SAME - It is the gist of the present invention to provide a photovoltaic device in which a single crystal semiconductor layer provided over a substrate having an insulating surface or an insulating substrate is used as a photoelectric conversion layer, and the single crystal semiconductor layer is provided with a so-called SOI structure where the single crystal semiconductor layer is bonded to the substrate with an insulating layer interposed therebetween. As the single crystal semiconductor layer having a function as a photoelectric conversion layer, a single crystal semiconductor layer obtained by separation and transfer of an outer layer portion of a single crystal semiconductor substrate is used. | 05-26-2011 |
20110136295 | METHOD FOR MANUFACTURING SOLID-STATE IMAGE PICKUP-DEVICE - A method for manufacturing a solid-state image device which includes the steps of: forming a silicon epitaxial growth layer on a silicon substrate; forming photoelectric conversion portions, transfer gates, and a peripheral circuit portion in and/or on the silicon epitaxial growth layer and further forming a wiring layer on the silicon epitaxial growth layer; forming a split layer in the silicon substrate at a side of the silicon epitaxial growth layer; forming a support substrate on the wiring layer; peeling the silicon substrate from the split layer so as to leave a silicon layer formed of a part of the silicon substrate at a side of the support substrate; and planarizing the surface of the silicon layer. | 06-09-2011 |
20110143497 | THICK FILM CONDUCTIVE COMPOSITION USED IN CONDUCTORS FOR PHOTOVOLTAIC CELLS - A method of forming a photovoltaic cell conductor that comprises steps of, applying on a semiconductor substrate a thick film conductive composition comprising inorganic powders comprising electrically conductive powder, first glass frit and second glass frit, and organic medium, wherein total PbO in the glass frits is 80.5 to 83.5 wt % based on the total weight of the first glass frit and the second glass frit, and firing the thick film conductive composition applied on the semiconductor substrate. | 06-16-2011 |
20110151614 | PROCESS FOR PRODUCING ELECTRODES FOR SOLAR CELLS - The invention relates to a process for producing electrodes for solar cells, the electrode being configured as an electrically conductive layer on a substrate ( | 06-23-2011 |
20110159637 | SEMICONDUCTOR DEVICE - A semiconductor device that attenuates light to the circuit element area is provided. The semiconductor device includes light-sensitive element area formed on substrate and a circuit element area formed on the substrate. Additionally, a multilayer wiring area is formed on circuit element area. A Tantalum film (which is generally made of tantalum or a tantalum compound) is formed on the surface of the multilayer wiring area to attenuate incident light on circuit element area. | 06-30-2011 |
20110165727 | METHOD OF FABRICATING PHOTO SENSOR - A method of fabricating a photo sensor includes the following steps. First, a substrate is provided, having a conductive layer, a buffer dielectric layer, a patterned semiconductor layer, a dielectric layer, and a planarization layer disposed thereon from bottom to top, wherein the patterned semiconductor layer comprises a first doped region, an intrinsic region, and a second doped region disposed in order. Then, the planarization layer is patterned to form an opening in the planarization layer to expose a portion of the dielectric layer, wherein the opening is positioned on the intrinsic region and portions of the first and the second doped regions. Thereafter, at least a patterned transparent conductive layer is formed in the opening, covering the boundary of the intrinsic region and the first doped region and the boundary of the intrinsic region and the second doped region. | 07-07-2011 |
20110177651 | METHOD FOR PRODUCING A METAL STRUCTURE ON A SURFACE OF A SEMICONDUCTOR SUBSTRATE - A method for producing a metal structure on a surface of a semiconductor substrate, including the following steps: A applying a metal layer, B applying a structuring layer and C removing the structuring layer. Either step B is carried out after step A, and step C after step B in a masking method, so that the structuring layer covers the metal layer at least partially and, after step B is carried out, the metal layer is removed from the regions not covered by the structuring layer, before step C is carried out or, in a lift-off method, step A is carried out after step B, and step C after step A, so that the structuring layer is covered essentially by the metal layer and, at least in the regions, in which the metal layer covers the structuring layer, the metal layer is detached when step C is carried out. It is essential that the structuring layer in step B is produced by a hot melt ink. | 07-21-2011 |
20110177652 | BIFACIAL SOLAR CELL USING ION IMPLANTATION - An improved bifacial solar cell is disclosed. In some embodiments, the front side includes an n-type field surface field, while the back side includes a p-type emitter. In other embodiments, the p-type emitter is on the front side. To maximize the diffusion of majority carriers and lower the series resistance between the contact and the substrate, the regions beneath the metal contacts are more heavily doped. Thus, regions of higher dopant concentration are created in at least one of the FSF or the emitter. These regions are created through the use of selective implants, which can be performed on one or two sides of the bifacial solar cell to improve efficiency. | 07-21-2011 |
20110189817 | MANUFACTURING METHOD FOR SOLAR CELL - A manufacturing method for a solar cell including an upper electrode extracting an electrode at an incident light side, the upper electrode including a transparent conductive film, a basic structural element of the transparent conductive film being any one of an indium (In), a zinc (Zn), and tin (Sn), the manufacturing method including: a step A forming a texture on a front surface of a transparent substrate using a wet etching method, the transparent conductive film being formed on the transparent substrate, wherein in the step A, when the texture is formed, a metal thin film is formed on the transparent substrate, and an anisotropic etching is performed with the metal thin film being a mask. | 08-04-2011 |
20110195542 | METHOD OF PROVIDING SOLAR CELL ELECTRODE BY ELECTROLESS PLATING AND AN ACTIVATOR USED THEREIN - A method of providing solar cell electrode by electroless plating and an activator used therein are disclosed. The method of the present invention can be performed without silver paste, and comprises steps: (A) providing a silicon substrate; (B) contacting the silicon substrate with an activator, wherein the activator comprises: a noble metal or a noble metal compound, a thickening agent, and water; (C) washing the silicon substrate by a cleaning agent; (D) dipping the silicon substrate in an electroless nickel plating solution to perform electroless plating. The method of providing solar cell electrode by electroless plating of the present invention has high selectivity between silicon nitride and silicon, large working window, and is steady, easily to be controlled, therefore is suitable for being used in the fabrication of the electrodes of the solar cell substrate. | 08-11-2011 |
20110201146 | PASTE FOR BACK CONTACT-TYPE SOLAR CELL - Disclosed is a method for producing a solar cell electrode, comprising the steps of: (1) applying a paste comprising (a) electrically conductive particles containing silver particle having a particle size of 0.1 to 10 microns and an added particle comprising a metal alloy comprising metal particles selected from the group consisting of Mo, Tc, Ru, Rh, Pd, W, Re, Os, Ir and Pt particles onto the opposite side from the light receiving side of a back contact-type solar cell substrate, wherein content of the silver particle is 40 to 90 wt %, and content of the added particle is 0.01 to 10 wt % based on the weight of the paste; and (2) firing the applied paste. | 08-18-2011 |
20110201147 | PASTE FOR BACK CONTACT-TYPE SOLAR CELL - Disclosed is a method for producing a solar cell electrode, comprising the steps of: ( | 08-18-2011 |
20110207261 | MASK AND FILM FORMATION METHOD USING THE SAME - A mask includes: a tabular first section which includes a side portion and an opening portion formed at a position corresponding to a film formation region of a substrate and on which the substrate is to be disposed so that the first section overlaps a face of the substrate on which a film is to be formed; and a second section which is provided along the side portion of the first section, and covers at least one of portions of a side face of the substrate, wherein second sections of two adjacent masks overlap each other and a superposed section is thereby formed when a plurality of masks are arrayed in a lateral direction thereof. | 08-25-2011 |
20110223712 | CONDUCTIVE PASTE AND GRID ELECTRODE FOR SILICON SOLAR CELLS - A method for producing a solar cell electrode, comprising the steps of: applying on at least part of a light-receiving surface of a semiconductor substrate a conductive paste comprising conductive component, glass frit, and resin binder, wherein the conductive component comprises alloy particles comprising silver and a metal selected from the group consisting of Pd, Ir, Pt, Ru, Ti, and Co; and firing the conductive paste. | 09-15-2011 |
20110223713 | CONDUCTIVE PASTE AND GRID ELECTRODE FOR SILICON SOLAR CELLS - A method for producing a solar cell electrode, comprising the steps of: applying on at least part of a light-receiving surface of a semiconductor substrate a conductive paste comprising conductive component, glass frit, and resin binder, wherein the conductive component comprises silver particles and core-shell particles in which a metal selected from the group consisting of Pd, Ir, Pt, Ru, Ti, and Co is coated on a surface of silver or copper; and firing the conductive paste. | 09-15-2011 |
20110230010 | SYSTEM AND METHOD FOR FABRICATING PHOTOVOLTAIC CELLS - A substrate processing system includes a source unit configured to supply a deposition material to a substrate, a substrate holder configured to hold a substrate to receive the deposition material, a shadow mask comprising a frame that includes two opposing arms; and a crossbar configured to be mounted to the two opposing arms. The frame and the crossbar define a plurality of openings that allow the deposition material supplied by the source unit to be deposited on the substrate. A transport mechanism can produce relative movement between the shadow mask and the substrate. | 09-22-2011 |
20110237024 | METHOD FOR PROCESSINIG AN EDGE OF A PHOTOVOLTAIC PANEL - A method for processing an edge of a photovoltaic panel is described. A first electrically-conductive film, a photovoltaic film and a second electrically-conductive film are serially formed as a stack of three films over a surface of a substrate. An edge section of the stack of three films is removed from the surface of the substrate by sandblasting. At least two separate grooves are formed by laser scribing on all the three films adjacent to the removed edge section of the stack of three films. | 09-29-2011 |
20110244625 | Continuously Optimized Solar Cell Metallization Design through Feed-Forward Process - An improved, lower cost method of processing substrates, such as to create solar cells, is disclosed. The doped regions are created on the substrate, using a mask or without the use of lithography or masks. After the implantation is complete, visual recognition is used to determine the exact region that was implanted. This information can then be used by subsequent process steps to crate a suitable metallization layer and provide alignment information. These techniques can also be used in other ion implanter applications. In another aspect, a dot pattern selective emitter is created and imaging is used to determine the appropriate metallization layer. | 10-06-2011 |
20110244626 | METHOD OF FORMING SOLAR CELL - A method of forming solar cell includes the following steps. A substrate having a first region and a second region is provided. A dopant source layer is then formed on the substrate. A laser beam is used to locally irradiate the dopant source layer corresponding to the first region to locally diffuse the dopants of the dopant source layer on the first region downward into the substrate. The laser beam also changes the surface property of the substrate in the first region to form a visible patterned mark. The dopant source layer is then removed, and a patterned electrode is formed on the first region of the substrate using the visible patterned mark as an alignment mark. | 10-06-2011 |
20110244627 | METHOD OF MANUFACTURING PHOTOELECTRIC CONVERSION DEVICE - In a method of manufacturing a photoelectric conversion device having a pixel region and a peripheral circuit region, a semiconductor compound layer is formed by causing a surface of a diffusion layer or gate electrode of a MOS transistor in the peripheral circuit region to react with a high melting point metal, then an insulating layer is formed in the pixel region and the peripheral circuit region after the step of forming a semiconductor compound layer. A contact hole is formed in the insulating layer to expose a diffusion layer in the pixel region, and a contact hole is formed in the insulating layer to expose the semiconductor compound layer formed in the peripheral circuit region. These holes are formed at different timings. Prior to forming the hole which is formed later, a contact plug is formed in the contact hole which is formed earlier. | 10-06-2011 |
20110269263 | METHOD FOR IMPLANTING IMPURITIES INTO A SUBSTRATE AND METHOD FOR MANUFACTURING A SOLAR CELL USING THE SAME - In a method for implanting impurities into a substrate and a method for manufacturing a solar cell using the method, a substrate is dipped into a first solution including a first impurity, and a laser is irradiated to a first region of the substrate dipped into the first solution is irradiated with laser to implant a first dopant generated from the first impurity into the first region. Accordingly, the first dopant generated from the first impurity is implanted into the substrate at room temperature to improve reliability for implanting the first dopant. | 11-03-2011 |
20110269264 | METHODS FOR FABRICATION OF NANOWALL SOLAR CELLS AND OPTOELECTRONIC DEVICES - A photovoltaic device that includes a substrate and a nanowall structure disposed on the substrate surface. The device also includes at least one layer conformally deposited over the nanowall structure. The conformal layer(s) is at least a portion of a photoactive junction. A method for making a photovoltaic device includes generating a nanowall structure on a substrate surface and conformally depositing at least one layer over the nanowall structure thereby forming at least one photoactive junction. A solar panel includes at least one photovoltaic device based on a nanowall structure. The solar panel isolates such devices from its surrounding atmospheric environment and permits the generation of electrical power. Optoelectronic device may also incorporate a photovoltaic device based on a nanowall structure. | 11-03-2011 |
20110294255 | METHOD FOR FORMING SILICON TRENCH - A method for forming a silicon trench, comprises the steps of: defining an etching area at a silicon substrate; forming metal catalysts at the surface of the etching area; immersing the silicon substrate in a first etching solution thereby forming anisotropic silicon nanostructures in the etching area; immersing the silicon substrate in a second etching solution thereby resulting in the silicon nanostructures being side-etched and detached from the silicon substrate, thus forming the silicon trench. | 12-01-2011 |
20110294256 | FILM-FORMING METHOD FOR FORMING PASSIVATION FILM AND MANUFACTURING METHOD FOR SOLAR CELL ELEMENT - The challenge for the present invention is to provide a film-forming method and for forming a passivation film which can sufficiently inhibit the loss of carriers due to their recombination; and a method for manufacturing a solar cell element with the use of the method or the device. The film-forming device comprises a mounting portion | 12-01-2011 |
20110300666 | PHOTODIODE SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD - The invention provides a semiconductor device manufactured with a plurality of photodiodes so that it does not short circuit, and includes an opening without leakage. A second semiconductor layer ( | 12-08-2011 |
20110312123 | Method for forming conductive electrode pattern and method for manufacturing solar cell with the same - Disclosed herein is a conductive electrode pattern used as an electrode of a solar cell. The conductive electrode pattern includes a lower metal layer and an upper metal layer vertically disposed on a substrate, wherein any one of the lower metal layer and the upper metal layer includes silver (Ag) and the other one of the lower metal layer and the upper metal layer includes a metal of transition metals, different from that of the lower metal layer. | 12-22-2011 |
20110312124 | METHOD OF FABRICATING THIN FILM SOLAR CELL - Disclosed is a method of fabricating a thin film solar cell. A separation process (‘P4’ process) of insulating a thin film solar cell from the outside is integrally performed with a transparent electrode patterning process (‘P3’ process) and a metallic electrode patterning process (‘P3’ process). This may reduce the fabrication costs and enhance spatial efficiency as the ‘P4’ process and equipment for the ‘P4’ process are not required. | 12-22-2011 |
20110318870 | LIQUID ADDITIVE FOR ETCHING SILICON NITRIDE AND SILICON OXIDE LAYERS, METAL INK CONTAINING THE SAME, AND METHOD OF MANUFACTURING SILICON SOLAR CELL ELECTRODES - The present invention relates to a liquid additive for etching silicon nitride and silicon oxide layers, a metal ink including the same for forming silicon solar cell electrodes and a method for manufacturing silicon solar cell electrodes. More particularly, it relates to a liquid additive including metal nitrate, metal acetate, or hydrates thereof and a metal ink for forming silicon solar cell electrodes, mixed with the liquid additive and a metal. Further, it relates to a method for manufacturing silicon solar cell electrodes comprising a one-step non-contact printing for etching of a silicon nitride layer or silicon oxide layer and forming electrodes. | 12-29-2011 |
20110318871 | PROCESS FOR PRODUCING PHOTOVOLTAIC DEVICE - There are provided a thermal barrier coating material and a thermal barrier coating member that can suppress spalling when used at a high temperature and have a high thermal barrier effect, a method for producing the same, a turbine member coated with a thermal barrier coating, and a gas turbine. The thermal barrier coating member comprises a heat resistant substrate, a bond coat layer formed thereon, and a ceramic layer formed further thereon, wherein the ceramic layer comprises an oxide which consists of an oxide represented by the general formula A | 12-29-2011 |
20110318872 | SILICON SOLAR CELL - A silicon solar cell includes a first silicon layer with an emitter layer which has a thickness in a range of 50 nanometers to few hundreds nanometers. The emitter layer has at least one region which is porosified by chemical or electrochemical etching, wherein at least one part of the porosified region is embodied as metal silicide layer. A second silicon layer is disposed underneath the emitter layer, with the metal silicide extending from a top side of the emitter layer in a direction to the second silicon layer. At least one metal layer is applied on the metal silicide layer. | 12-29-2011 |
20110318873 | METHOD OF MANUFACTURING PHOTOELECTRIC CONVERSION DEVICE - A method of manufacturing a photoelectric conversion device having a semiconductor substrate, comprises a first step of forming an insulating film on the semiconductor substrate, a second step of forming first holes in the insulating film, a third step of forming, in the insulating film, second holes shallower than the first holes, a fourth step of forming electrically conductive portions by embedding an electrically conductive material in the first holes, and forming planarization assisting portions by embedding the electrically conductive material in the second holes, and a fifth step of polishing the electrically conductive portions, the insulating film, and the planarization assisting portions until the planarization assisting portions are removed, thereby planarizing upper surfaces of the electrically conductive portions and the insulating film. | 12-29-2011 |
20110318874 | METHOD FOR MANUFACTURING PHOTOELECTRIC CONVERSION ELEMENT AND PHOTOELECTRIC CONVERSION ELEMENT - A method for manufacturing a photoelectric conversion element and a photoelectric conversion element manufactured by the manufacturing method. The method includes the steps of forming a p-type impurity diffusion layer by diffusing boron into a silicon substrate, forming an oxidation control mask on a surface of the p-type impurity diffusion layer in an area corresponding to an area where an electrode for p-type is to be formed, forming a thermal silicon oxide film on the surface of the p-type impurity diffusion layer, exposing part of the surface of the p-type impurity diffusion layer by removing the oxidation control mask formed on the surface of the p-type impurity diffusion layer in the area corresponding to the area where the electrode for p-type is to be formed, and forming the electrode for p-type on the part of the surface of the p-type impurity diffusion layer exposed by the removal of the oxidation control mask. | 12-29-2011 |
20120003788 | High Throughput Solar Cell Ablation System - A solar cell is formed using a solar cell ablation system. The ablation system includes a single laser source and several laser scanners. The laser scanners include a master laser scanner, with the rest of the laser scanners being slaved to the master laser scanner. A laser beam from the laser source is split into several laser beams, with the laser beams being scanned onto corresponding wafers using the laser scanners in accordance with one or more patterns. The laser beams may be scanned on the wafers using the same or different power levels of the laser source. | 01-05-2012 |
20120003789 | Apparatus for Manufacturing Thin Film Photovoltaic Devices - An apparatus for fabricating thin film photovoltaic devices includes a deposition chamber for loading a pair of substrates. Two heater platens in a side-by-side configuration with a middle gap form intimate contact with the pair of substrates. Each heater platen has a second width and a second length respectively made smaller than the first width and the first length to allow the substrate to fully cover the heater platen for preventing formation of edge lip due to coating buildup in a peripheral edge region. The apparatus further includes a shield structure which covers both the middle gap and all outer peripheral side regions of the side-by-side configuration of the two heater platens for preventing coating buildup and guiding a downstream flow. | 01-05-2012 |
20120009730 | METHOD OF INLINE MANUFACTURING A SOLAR CELL PANEL - Throughput of manufacturing thin-film solar panels by inline technique is made substantially independent from the time extent of different surface treatment steps by accordingly subdividing treatment steps in sub-steps performed in inline subsequent treatment stations. Treatment duration in each of the subsequent treatment stations is equal (τ). | 01-12-2012 |
20120021560 | TRUNCATED PYRAMID STRUCTURES FOR SEE-THROUGH SOLAR CELLS - The present disclosure presents a partially-transparent (see-through) three-dimensional thin film solar cell (3-D TFSC) substrate. The substrate includes a plurality of unit cells. Each unit cell structure has the shape of a truncated pyramid, and its parameters may be varied to allow a desired portion of sunlight to pass through. | 01-26-2012 |
20120021561 | PLASMA PROCESSING APPARATUS AND METHOD FOR MANUFACTURING SOLAR CELL USING SAME - A method of manufacturing a solar cell in which qualities and thicknesses of formed films are uniformed is obtained. This method of manufacturing a solar cell includes steps of forming a substrate-side electrode ( | 01-26-2012 |
20120028409 | METHODS OF FORMING AN ANISOTROPIC CONDUCTIVE LAYER AS A BACK CONTACT IN THIN FILM PHOTOVOLTAIC DEVICES - Thin film photovoltaic devices are generally provided. The device can include a transparent conductive oxide layer on a glass substrate, an n-type thin film layer on the transparent conductive layer, and a p-type thin film layer on the n-type layer. The n-type thin film layer and the p-type thin film layer form a p-n junction. An anisotropic conductive layer is applied on the p-type thin film layer, and includes a polymeric binder and a plurality of conductive particles. A metal contact layer can then be positioned on the anisotropic conductive layer. | 02-02-2012 |
20120040494 | PROCESS FOR PRODUCING PHOTOVOLTAIC DEVICE - A process for producing a photovoltaic device having high photovoltaic conversion efficiency by suppressing light absorption in the visible light short wavelength region. The process for producing a photovoltaic device ( | 02-16-2012 |
20120064660 | Apparatus and Method for Manufacturing of Thin Film Type Solar Cell - Disclosed is an apparatus and method for manufacturing a thin film type solar cell, which enables the enhancement of productivity, the apparatus for manufacturing a thin film type solar cell including a first electrode forming unit; a first separation part; an optoelectric conversion layer forming unit; a contact line forming unit; a printing unit; and an etching process unit, wherein the etching process unit removes the optoelectric conversion layer in a second separation part to expose the first electrode in the second separation part through a wet etching process. | 03-15-2012 |
20120064661 | CONTINUOUSLY OPTIMIZED SOLAR CELL METALLIZATION DESIGN THROUGH FEED-FORWARD PROCESS - An improved, lower cost method of processing substrates, such as to create solar cells, is disclosed. The doped regions are created on the substrate, using a mask or without the use of lithography or masks. After the implantation is complete, visual recognition is used to determine the exact region that was implanted. This information can then be used by subsequent process steps to crate a suitable metallization layer and provide alignment information. These techniques can also be used in other ion implanter applications. In another aspect, a dot pattern selective emitter is created, and imaging is used to determine the appropriate metallization layer. | 03-15-2012 |
20120064662 | CONTINUOUSLY OPTIMIZED SOLAR CELL METALLIZATION DESIGN THROUGH FEED-FORWARD PROCESS - An improved, lower cost method of processing substrates, such as to create solar cells, is disclosed. The doped regions are created on the substrate, using a mask or without the use of lithography or masks. After the implantation is complete, visual recognition is used to determine the exact region that was implanted. This information can then be used by subsequent process steps to crate a suitable metallization layer and provide alignment information. These techniques can also be used in other ion implanter applications. In another aspect, a dot pattern selective emitter is created and imaging is used to determine the appropriate metallization layer. | 03-15-2012 |
20120070938 | Method of Fabricating Silicon Nanowire Solar Cell Device Having Upgraded Metallurgical Grade Silicon Substrate - A simplified method for fabricating a solar cell device is provided. The solar cell device has silicon nanowires (SiNW) grown on an upgraded metallurgical grade (UMG) silicon (Si) substrate. Processes of textured surface process and anti-reflection thin film process can be left out for further saving costs on equipment and manufacture investment. Thus, a low-cost Si-based solar cell device can be easily fabricated for wide application. | 03-22-2012 |
20120077307 | ETCHING PASTE HAVING A DOPING FUNCTION AND METHOD OF FORMING A SELECTIVE EMITTER OF A SOLAR CELL USING THE SAME - An etching paste having a doping function for etching a thin film on a silicon wafer and a method of forming a selective emitter of a solar cell, the etching paste including an n-type or p-type dopant; a binder; and a solvent. | 03-29-2012 |
20120083068 | PHOTOVOLTAIC DEVICE AND METHOD FOR MAKING - One aspect of the present invention provides a device that includes a substrate; a first semiconducting layer; a transparent conductive layer; a transparent window layer. The transparent window layer includes cadmium sulfide and oxygen. The device has a fill factor of greater than about 0.65. Another aspect of the present invention provides a method of making the device. | 04-05-2012 |
20120100666 | PHOTOLUMINESCENCE IMAGE FOR ALIGNMENT OF SELECTIVE-EMITTER DIFFUSIONS - Embodiments of the invention generally provide a solar cell formation process that includes the formation of metal contacts over heavily doped regions that are formed in a desired pattern on a surface of a substrate. Embodiments of the invention also provide an inspection system and supporting hardware that is used to reliably position a similarly shaped, or patterned, metal contact structure on the patterned heavily doped regions to allow an Ohmic contact to be made. The metal contact structure, such as fingers and busbars, are formed on the heavily doped regions so that a high quality electrical connection can be formed between these two regions. | 04-26-2012 |
20120108003 | METHOD FOR PRODUCING A SOLAR CELL - In various embodiments, a method for producing a solar cell is provided. In accordance with the method, through-holes may be formed in a solar cell substrate having the basic doping of a first conduction type. Furthermore, predetermined surface regions of a first surface of the solar cell substrate which include at least one portion of the through-holes may be highly doped with a second, opposite conduction type; and simultaneously or subsequently other surface regions of the first surface are lightly doped with the second conduction type. Furthermore, first and second metallic contacts may subsequently be formed in such a way that the second metallic contacts are electrically isolated from the first metallic contacts. | 05-03-2012 |
20120108004 | PHOTO-SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME - A method of manufacturing photo-semiconductor device that has a photoconductive semiconductor film provided with electrodes and formed on a second substrate, the semiconductor film being formed by epitaxial growth on a first semiconductor substrate different from the second substrate, the second substrate being also provided with electrodes, the electrodes of the second substrate and the electrodes of the photoconductive semiconductor film being held in contact with each other. | 05-03-2012 |
20120115275 | FORMING PHOTOVOLTAIC CONDUCTIVE FEATURES FROM MULTIPLE INKS - Photovoltaic conductive features and processes for forming photovoltaic conductive features are described. The process comprises (a) providing a substrate comprising a passivation layer disposed on a silicon layer; (b) depositing a surface modifying material onto at least a portion of the passivation layer; (c) depositing a composition comprising at least one of metallic nanoparticles comprising a metal or a metal precursor to the metal onto at least a portion of the substrate; and (d) heating the composition such that it forms at least a portion of a photovoltaic conductive feature in electrical contact with the silicon layer, wherein at least one of the composition or the surface modifying material etches a region of the passivation layer. When the surface modifying material is a UV-curable material, the process comprises the additional step of curing the UV-curable material. | 05-10-2012 |
20120122270 | ETCHING METHOD FOR USE WITH THIN-FILM PHOTOVOLTAIC PANEL - The present invention relates to a chemical etching method to electrically isolate the edge from the interior of a thin-film photovoltaic panel comprising a substrate and a photovoltaic laminate. The method comprises a step to dispense an etching paste comprising two or more acids on the laminate periphery; an optional step to apply heat to the laminate; and a step to remove the etching paste. The method is further characterized by the chemical removal of at least two chemically distinctive layers of the laminate at the periphery where the etching paste is applied. The method may be used to produce a thin-film photovoltaic panel. | 05-17-2012 |
20120122271 | ETCHING METHOD TO INCREASE LIGHT TRANSMISSION IN THIN-FILM PHOTOVOLTAIC PANELS - The present invention relates to a chemical etching method for removing portions of material from the photovoltaic laminate of a thin-film photovoltaic panel. The method involves disposing a pre-determined pattern of an etching paste onto the back electrode of the photovoltaic laminate, and then removing the etching paste after a sufficient dwell time. | 05-17-2012 |
20120122272 | HIGH-THROUGHPUT FLAT TOP LASER BEAM PROCESSING FOR BACK CONTACT SOLAR CELLS - Flat top beam laser processing schemes are disclosed for producing various types of hetero-junction and homo-junction solar cells. The methods include base and emitter contact opening, back surface field formation, selective doping, and metal ablation. Also, laser processing schemes are disclosed that are suitable for selective amorphous silicon ablation and selective doping for hetero-junction solar cells. These laser processing techniques may be applied to semiconductor substrates, including crystalline silicon substrates, and further including crystalline silicon substrates which are manufactured either through wire saw wafering methods or via epitaxial deposition processes, that are either planar or textured/three-dimensional. These techniques are highly suited to thin crystalline semiconductor, including thin crystalline silicon films. | 05-17-2012 |
20120122273 | DIRECT CURRENT ION IMPLANTATION FOR SOLID PHASE EPITAXIAL REGROWTH IN SOLAR CELL FABRICATION - An apparatus and methods for ion implantation of solar cells. The disclosure provide enhanced throughput and recued or elimination of defects after SPER anneal step. The substrate is continually implanted using continuous high dose-rate implantation, leading to efficient defect accumulation, i.e., amorphization, while suppressing dynamic self-annealing. | 05-17-2012 |
20120129295 | METHOD OF MANUFACTURING PHOTOELECTRIC CONVERSION DEVICE - Disclosed herein is a photoelectric conversion device having a semiconductor substrate including a front side and back side, a protective layer formed on the front side of the semiconductor substrate, a first non-single crystalline semiconductor layer formed on the back side of the semiconductor substrate, a first conductive layer including a first impurity formed on a first portion of a back side of the first non-single crystalline semiconductor layer, and a second conductive layer including the first impurity and a second impurity formed on a second portion of the back side of the first non-single crystalline semiconductor layer. | 05-24-2012 |
20120142140 | NANOPARTICLE INKS FOR SOLAR CELLS - In a process for producing a solar cell, a sintering process performed on a nickel nanoparticle ink forms nickel silicide to create good adhesion and a low electrical ohmic contact to a silicon layer underneath, and allows for a subsequently electroplated metal layer to reduce electrode resistances. The printed nickel nanoparticles react with the silicon nitride of the antireflective layer to form conductive nickel silicide. | 06-07-2012 |
20120156828 | METHODS FOR FORMING A TRANSPARENT OXIDE LAYER FOR A PHOTOVOLTAIC DEVICE - A method of manufacturing a transparent oxide layer is provided. The manufacturing method includes disposing a cadmium tin oxide layer on a support, placing the support with the cadmium tin oxide layer within a chamber of a rapid thermal annealing system, and rapidly thermally annealing the cadmium tin oxide layer by exposing the cadmium tin oxide layer to electromagnetic radiation to form the transparent oxide layer, wherein the rapid thermal anneal is performed without first pumping down the chamber. | 06-21-2012 |
20120171810 | Paste Composition For Electrode of Solar Cell and Solar Cell Including the Same - A paste composition for an electrode of a solar cell according to the present invention comprises a conductive powder, an organic vehicle, and a glass frit, and the glass frit includes a first glass frit having a first glass transition temperature and a second glass frit having a second glass frit temperature lower than the first glass transition temperature. | 07-05-2012 |
20120178207 | Vanadium, Cobalt And Strontium Additives For Use In Aluminum Back Solar Cell Contacts - Al pastes with additives of Co, Sr, V, compounds thereof and combinations thereof improve both the physical integrity of a back contact of a silicon solar cell as well as the electrical performance of a cell with such a contact. | 07-12-2012 |
20120196399 | Nitrogen Reactive Sputtering of Cu-In-Ga-N For Solar Cells - Methods for forming Cu—In—Ga—N (CIGN) layers for use in TFPV solar panels are described using reactive PVD deposition in a nitrogen containing atmosphere. In some embodiments, the CIGN layers can be used as an absorber layer and eliminate the need of a selenization step. In some embodiments, the CIGN layers can be used as a protective layer to decrease the sensitivity of the CIG layer to oxygen or moisture before the selenization step. In some embodiments, the CIGN layers can be used as an adhesion layer to improve the adhesion between the back contact layer and the absorber layer. | 08-02-2012 |
20120196400 | METHOD OF MANUFACTURING SOLAR BATTERY - When a layered structure of a transparent electrode layer and a metal layer is formed as a back side electrode layer over a surface on a side opposite to a side of incidence of light of a thin film solar battery, a time when formation of the transparent electrode layer is completed and a time when formation of the metal layer is started are made to coincide for one substrate. | 08-02-2012 |
20120196401 | Nano/Microwire Solar Cell Fabricated by Nano/Microsphere Lithography - Techniques for fabricating nanowire/microwire-based solar cells are provided. In one, a method for fabricating a solar cell is provided. The method includes the following steps. A doped substrate is provided. A monolayer of spheres is deposited onto the substrate. The spheres include nanospheres, microspheres or a combination thereof. The spheres are trimmed to introduce space between individual spheres in the monolayer. The trimmed spheres are used as a mask to pattern wires in the substrate. The wires include nanowires, microwires or a combination thereof. A doped emitter layer is formed on the patterned wires. A top contact electrode is deposited over the emitter layer. A bottom contact electrode is deposited on a side of the substrate opposite the wires. | 08-02-2012 |
20120202317 | BIFACIAL SOLAR CELL USING ION IMPLANTATION - An improved bifacial solar cell is disclosed. In some embodiments, the front side includes an n-type field surface field, while the back side includes a p-type emitter. In other embodiments, the p-type emitter is on the front side. To maximize the diffusion of majority carriers and lower the series resistance between the contact and the substrate, the regions beneath the metal contacts are more heavily doped. Thus, regions of higher dopant concentration are created in at least one of the FSF or the emitter. These regions are created through the use of selective implants, which can be performed on one or two sides of the bifacial solar cell to improve efficiency. | 08-09-2012 |
20120208317 | Intermetal Stack for Use in a Photovoltaic Cell - A donor silicon wafer may be bonded to a substrate and a lamina cleaved from the donor wafer. A photovoltaic cell may be formed from the lamina bonded to the substrate. An intermetal stack is described that is optimized for use in such a cell. The intermetal stack may include a transparent conductive oxide layer serving as a quarter-wave plate, a low resistance layer, an adhesion layer to help adhesion to the receiver element, and may also include a barrier layer to prevent or impede unwanted diffusion within the stack. | 08-16-2012 |
20120220069 | METHOD OF PRODUCING CONDUCTIVE THIN FILM - An embodiment of this invention provides a method to produce a conductive thin film, which comprises: providing a substrate; forming a first metal oxide layer on the substrate; forming an indium-free metal layer on the first metal oxide layer; and forming a second metal oxide layer on the indium-free layer, wherein the first metal oxide layer, the indium-free metal layer, and the second oxide layer are all solution processed. | 08-30-2012 |
20120220070 | METHOD OF MANUFACTURING SOLAR CELL - A method of manufacturing a solar cell includes the following steps. An ion implantation process is performed to a first surface of a substrate to form a first doping layer. Then, the ion implantation process is performed to a second surface of the substrate to form a second doping layer. After that, an annealing process is performed to the structure formed by the substrate, the first doping layer and the second doping layer, and forming a first passivation layer on the first doping layer and a second passivation layer on the second doping layer by the annealing process. A third passivation layer is formed on the first passivation layer formed after the annealing process and a fourth passivation layer is formed on the second passivation layer formed after the annealing process. Afterward, conductive electrodes are formed on the third passivation layer and the fourth passivation layer, respectively. | 08-30-2012 |
20120220071 | SCREEN MASK AND MANUFACTURING METHOD OF A SOLAR CELL USING THE SCREEN MASK - A screen mask has a mesh, a frame, and at least one emulsion pattern. The mesh includes a squeeze surface pressed by a squeegee, and a discharge surface discharging a paste. The frame fixes an edge of the mesh. The emulsion pattern is placed on the discharge surface and includes a main pattern, and an auxiliary pattern spaced apart from the main pattern. | 08-30-2012 |
20120220072 | COPPER NANO PASTE, METHOD FOR FORMING THE COPPER NANO PASTE, AND METHOD FOR FORMING ELECTRODE USING THE COPPER NANO PASTE - Provided is a copper nano paste that can be calcined at a relatively low temperature. The copper nano paste includes: a binder added in an amount of 0.1 to 30 parts by weight; an additive added in an amount of not more than 10 parts by weight; and copper particles added in an amount of 1 to 95 parts by weight, wherein the copper particles have a particle size of 150 nm or less, and the surfaces of the copper particles are coated with a capping material. | 08-30-2012 |
20120220073 | METHODS OF MANUFACTURING A SOLAR CELL - Provided are methods of fabricating a solar cell and a vacuum deposition apparatus used therefor. The method may include forming a lower electrode on a substrate, forming a light absorption layer on the lower electrode, forming a buffer layer on the light absorption layer, and forming a window electrode layer on the buffer layer. The forming of the buffer layer may include a deposition step of forming a cationic metal material and a diffusion step of diffusing an anionic non-metal material into the cationic metal material. | 08-30-2012 |
20120220074 | METHOD AND APPARATUS FOR PRODUCTION OF DSSC - An apparatus and method for producing a dye-sensitized cell are provided, in which a pre-transparent electrode and an opposite electrode are partially bonded, dye molecules are applied to the bonded electrodes followed by washing, an electrolyte is injected, and then the electrodes are hermetically sealed. With the apparatus and method, the manufacturing cost can be reduced and the manufacturing process can be simplified. | 08-30-2012 |
20120231576 | Aerosol Jet (R) Printing System for Photovoltaic Applications - Method and apparatus for depositing multiple lines on an object, specifically contact and busbar metallization lines on a solar cell. The contact lines are preferably less than 100 microns wide, and all contact lines are preferably deposited in a single pass of the deposition head. There can be multiple rows of nozzles on the deposition head. Multiple materials can be deposited, on top of one another, forming layered structures on the object. Each layer can be less than five microns thick. Alignment of such layers is preferably accomplished without having to deposit oversized alignment features. Multiple atomizers can be used to deposit the multiple materials. The busbar apparatus preferably has multiple nozzles, each of which is sufficiently wide to deposit a busbar in a single pass. | 09-13-2012 |
20120258568 | SOLAR CELL AND MANUFACTURING METHOD THEREOF - A method for manufacturing a solar cell including a photovoltaic layer, a first electrode layer, a second electrode layer, an insulating layer and a light-transparent conductive layer is provided. The photovoltaic layer has a first surface and a second surface. The first electrode layer having at least one gap is disposed on the first surface, wherein the at least one gap exposes a portion of the photovoltaic layer. The second electrode layer is disposed on the second surface. The insulating layer having a plurality of pores is located on the photovoltaic layer exposed by the at least one gap, wherein the holes expose a portion of the photovoltaic layer. The light-transparent conductive layer covers the insulating layer and is connected with the first electrode layer. The transparent electrode is connected with the photovoltaic layer through at least a part of the pores. | 10-11-2012 |
20120270364 | SEMICONDUCTOR DEVICE AND METHOD FOR PRODUCING SAME - A semiconductor device includes a semiconductor substrate having at least one surface provided with a semiconductor element, wherein the semiconductor substrate includes a region of a first conductivity type, the region being formed in a surface layer portion of the semiconductor substrate; a first diffusion region of a second conductivity type, the first diffusion region having a first impurity concentration and being formed in the surface layer portion, and a pn junction being formed between the first diffusion region and the region of the first conductivity type; and a first metal silicide film formed on part of a portion of the surface corresponding to the first diffusion region. | 10-25-2012 |
20120270365 | METHOD FOR MANUFACTURING SOLAR CELL - A method for manufacturing a solar cell according to an exemplary embodiment includes: forming a first doping film on a substrate; patterning the first doping film so as to form a first doping film pattern and so as to expose a portion of the substrate; forming a diffusion prevention film on the first doping film pattern so as to cover the exposed portion of the substrate; etching the diffusion prevention film so as to form spacers on lateral surfaces of the first doping film pattern; forming a second doping film on the first doping film pattern so as to cover the spacer and exposed substrate; forming a first doping region on the substrate surface by diffusing an impurity from the first doping film pattern into the substrate; and forming a second doping region on the substrate surface by diffusing an impurity from the second doping film pattern into the substrate. | 10-25-2012 |
20120270366 | Layered Contact Structure For Solar Cells - Formulations and methods of making semiconductor devices and solar cell contacts are disclosed. The invention provides a method of making a semiconductor device or solar cell contact including ink jet printing onto a silicon wafer an ink composition, typically including a high solids loading (20-80 wt %) of glass frit and preferably a conductive metal such as silver. The wafer is then fired such that the glass frit fuses to form a glass, thereby forming a contact layer to silicon. | 10-25-2012 |
20120276686 | CONDUCTIVE CHANNEL OF PHOTOVOLTAIC PANEL AND METHOD FOR MANUFACTURING THE SAME - An electrically conductive ribbon, which is soldered on an electrically conductive busbar of a photovoltaic panel, includes a cooper core and a tin based solder. The tin based solder fully wraps an outer surface of the cooper core, and has a convex solder surface, which has a first curvature to be fitted with a second curvature of a concave solder surface of the electrically conductive busbar. | 11-01-2012 |
20120282731 | PHOTOPLATING OF METAL ELECTRODES FOR SOLAR CELLS - A method of photoplating a metal contact onto a surface of a cathode of a photovoltaic device is provided using light induced plating technique. The method comprises: a) immersing the photovoltaic device in a solution of metal ions, where the metal ions are a species which is to be plated onto the surface of the cathode of the photovoltaic device; and b) illuminating the photovoltaic device, using a light source of time varying intensity. This results in nett plating which is faster in a direction normal to the surface of the cathode than in a direction in a plane of the surface of the cathode. | 11-08-2012 |
20120282732 | METHOD FOR FABRICATING A BACK CONTACT SOLAR CELL - The present disclosure relates to a method for manufacturing a back electrode-type solar cell. The method for manufacturing a back electrode-type solar cell disclosed herein includes: A method for manufacturing a back electrode-type solar cell, comprising: preparing an n-type crystalline silicon substrate; forming a thermal diffusion control film on a front surface, a back surface and a side surface of the substrate; forming a p-type impurity region by implanting p-type impurity ions onto the back surface of the substrate; patterning the thermal diffusion control film so that the back surface of the substrate is selectively exposed; and forming a high-concentration back field layer (n+) at an exposed region of the back surface of the substrate and a low-concentration front field layer (n−) at the front surface of the substrate by performing a thermal diffusion process, and forming a p+ emitter region by activating the p-type impurity region. | 11-08-2012 |
20120288989 | MANUFACTURING METHOD OF ELECTRODE OF SOLAR CELL AND MANUFACTURING APPARATUS THEREOF - A manufacturing method of an electrode of a solar cell is provided. The manufacturing method of the electrode of the solar cell includes following steps. A laser doping process is performed to form a selective emitter on a substrate. A laser marking process is performed to form alignment markers on the substrate. The laser doping process and the laser marking process are performed in a same process chamber. An electrode screen printing process is performed to form an electrode on the selective emitter according to the alignment markers. Relative displacement between the alignment markers and the laser doping area (the selective emitter) is avoided so as to reduce the error of the subsequent screen printing process. | 11-15-2012 |
20120288990 | INSITU EPITAXIAL DEPOSITION OF FRONT AND BACK JUNCTIONS IN SINGLE CRYSTAL SILICON SOLAR CELLS - Fabrication of a single crystal silicon solar cell with an insitu epitaxially deposited very highly doped p-type silicon back surface field obviates the need for the conventional aluminum screen printing step, thus enabling a thinner silicon solar cell because of no aluminum induced bow in the cell. Furthermore, fabrication of a single crystal silicon solar cell with insitu epitaxial p-n junction formation and very highly doped n-type silicon front surface field completely avoids the conventional dopant diffusion step and one screen printing step, thus enabling a cheaper manufacturing process. | 11-15-2012 |
20120288991 | BURNTHROUGH FORMULATIONS - For solar cell fabrication, the addition of precursors to printable media to assist etching through silicon nitride or silicon oxide layer thus affording contact with the substance underneath the nitride or oxide layer. The etching mechanism may be by molten ceramics formed in situ, fluoride-based etching, as well as a combination of the two. | 11-15-2012 |
20120288992 | Germanium Photodetector - A method for forming a photodetector device includes forming an insulator layer on a substrate, forming a germanium (Ge) layer on the insulator layer and a portion of the substrate, forming a second insulator layer on the Ge layer, patterning the Ge layer, forming a capping insulator layer on the second insulator layer and a portion of the first insulator layer, heating the device to crystallize the Ge layer resulting in an single crystalline Ge layer, implanting n-type ions in the single crystalline Ge layer, heating the device to activate n-type ions in the single crystalline Ge layer, and forming electrodes electrically connected to the single crystalline n-type Ge layer. | 11-15-2012 |
20120315723 | METHOD FOR FABRICATING DYE-SENSITIZED SOLAR CELL - A method for fabricating a dye-sensitized solar cell is provided. The dye-sensitized solar cell includes a photo electrode including (a) mixing a TiO | 12-13-2012 |
20120322200 | NON-LITHOGRAPHIC METHOD OF PATTERNING CONTACTS FOR A PHOTOVOLTAIC DEVICE - A dielectric material layer is formed on a front surface of a photovoltaic device. A patterned PMMA-type-material-including layer is formed on the dielectric material layer, and the pattern is transferred into the top portion of the photovoltaic device to form trenches in which contact structures can be formed. In one embodiment, a blanket PMMA-type-material-including layer is deposited on the dielectric material layer, and is patterned by laser ablation that removes ablated portions of PMMA-type-material. The PMMA-type-material-including layer may also include a dye to enhance absorption of the laser beam. In another embodiment, a blanket PMMA-type-material-including layer may be deposited on the dielectric material layer and mechanically patterned to form channels therein. In yet another embodiment, a patterned PMMA-type-material-including layer is stamped on top of the dielectric material layer. | 12-20-2012 |
20120329205 | ELECTRODE FORMATION SYSTEM FOR SOLAR CELL AND ELECTRODE FORMATION METHOD FOR SOLAR CELL - An electrode formation method for a solar cell to form an electrode of a base member, includes a screen printing process and a baking process. The screen printing process includes: mounting a metal mask on a surface of the base member, wherein the metal mask includes a covering portion configured to cover a part of a surface of the base member, opening portions configured to allow parts of the base member to be exposed therefrom, and bridge portions disposed along a direction intersecting with a longitudinal direction of circuit patterns between the opening portions; and supplying a paste to an upper surface of the metal mask by a squeegee head of a cartridge type, while relatively sliding a squeegee on the upper surface of the metal mask such that the squeegee travels relatively to the metal mask. In the baking process, the paste is baked to form the electrode. | 12-27-2012 |
20120329206 | SILICON-CONTAINING HETEROJUNCTION PHOTOVOLTAIC ELEMENT AND DEVICE - In one embodiment, a method of forming a photovoltaic device is provided which includes providing an absorption layer comprising a silicon-containing semiconductor layer of a first conductivity type and having a top surface and a bottom surface that opposes the top surface. A front contact is formed on the top surface of the absorption layer, and a back contact is formed on the bottom surface of the absorption layer. The forming of the front contact and the back contact can occur in any order. The back contact that is formed comprises at least one back contact semiconductor material layer of the first conductivity type and having a lower band-offset than that of hydrogenated amorphous silicon with crystalline Si and/or a higher activated doping of the first conductivity type than that of the doped hydrogenated amorphous silicon layer. | 12-27-2012 |
20120329207 | SEMICONDUCTOR DEVICE PACKAGE AND METHOD OF MANUFACTURING THEREOF - A semiconductor device package includes a semiconductor device having connection pads formed thereon, with the connection pads being formed on first and second surfaces of the semiconductor device with edges of the semiconductor device extending therebetween. A first passivation layer is applied on the semiconductor device and a base dielectric laminate is affixed to the first surface of the semiconductor device that has a thickness greater than that of the first passivation layer. A second passivation layer having a thickness greater than that of the first passivation layer is applied over the first passivation layer and the semiconductor device to cover the second surface and the edges of the semiconductor device, and metal interconnects are coupled to the connection pads, with the metal interconnects extending through vias formed through the first and second passivation layers and the base dielectric laminate sheet to form a connection with the connection pads. | 12-27-2012 |
20130005075 | METAL BARRIER-DOPED METAL CONTACT LAYER - A photovoltaic device can include an intrinsic metal layer adjacent to a semiconductor absorber layer; and a doped metal contact layer adjacent to the intrinsic metal layer, where the doped metal contact layer includes a metal base material and a dopant. | 01-03-2013 |
20130011959 | METHOD OF MANUFACTURING SOLAR CELL ELECTRODE AND CONDUCTIVE PASTE - A method of manufacturing a solar cell electrode comprising steps of: applying onto a semiconductor substrate a conductive paste comprising (i) a conductive powder, (ii) a glass frit, (iii) an organic polymer and (iv) an organic solvent comprising 30 to 85 weight percent (wt %) of 1-phenoxy-2-propanol based on the weight of the organic solvent; and firing the conductive paste. | 01-10-2013 |
20130011960 | Doped Graphene Films with Reduced Sheet Resistance - Techniques for increasing conductivity of graphene films by chemical doping are provided. In one aspect, a method for increasing conductivity of a graphene film includes the following steps. The graphene film is formed from one or more graphene sheets. The graphene sheets are exposed to a solution having a one-electron oxidant configured to dope the graphene sheets to increase a conductivity thereof, thereby increasing the overall conductivity of the film. The graphene film can be formed prior to the graphene sheets being exposed to the one-electron oxidant solution. Alternatively, the graphene sheets can be exposed to the one-electron oxidant solution prior to the graphene film being formed. A method of fabricating a transparent electrode on a photovoltaic device from a graphene film is also provided. | 01-10-2013 |
20130017647 | SURFACE-MODIFIED NANOPARTICLE INK FOR PHOTOVOLTAIC APPLICATIONS - Described herein is a novel material that easily penetrates silicon nitride-based anti-reflective coatings, forming a high quality electrical contact. A method for metallization on a solar cell includes depositing a passivation layer on a silicon substrate of a solar cell, depositing derivatized metal particles onto the passive layer, heating the substrate of the solar cell to migrate surface coatings from the derivatized metal particles onto the passivation layer creating a diffusion Channel through passivation layer to the silicon substrate, and as the metal particles melt due to the heating on the substrate, the melted metal diffuses through the diffusion channel forming a metallic content with the silicon substrate. | 01-17-2013 |
20130023084 | Substrate for Use in Preparing Solar Cells - Conductive material is combined with other substances to form a composite material for use as a conductive back face substrate for a thin silicon wafer solar cell. In at least one embodiment, a conductive composite substrate material is fabricated by filling granular conductive material with a mineral or ceramic or other small particulate with a low CTE; the composite is cast and fired so that it has an electrically conductive continuous phase and a discontinuous phase that will control and match the CTE of the substrate to be equal to or close to that of silicon, thereby diminishing the effects of bowing from CTE-mismatch. | 01-24-2013 |
20130040421 | Method for automatic offset caculation for deposition of an aligned metal pattern onto selective emitter pattern and subsequent monitoring of alignment - A method for calculating an offset value for aligned deposition of a second pattern onto a first pattern, comprising steps of: (a) loading a substrate with the first pattern on a surface of the substrate into a pattern recognition device at an original position inside the pattern recognition device; (b) determining a coordinate of a prescribed point of the first pattern by the pattern recognition device; (c) superimposing the second pattern onto the first pattern on the surface of the substrate; (d) bringing back the substrate with the first pattern and the second pattern into the original position inside the pattern recognition device; (e) determining a coordinate of a prescribed point of the second pattern by the pattern recognition device; wherein the prescribed point of the first pattern corresponds to the prescribed point of the second pattern; and (f) calculating the offset value between the first pattern and the second pattern. | 02-14-2013 |
20130040422 | Thick Film Pastes For Fire Through Applications In Solar Cells - Formulations and methods of making solar cell contacts and cells therewith are disclosed. The invention provides a photovoltaic cell comprising a front contact, a back contact, and a rear contact. The back contact comprises, prior to firing, a passivating layer onto which is applied a paste, comprising aluminum, a glass component, wherein the aluminum paste comprises, aluminum, another optional metal, a glass component, and a vehicle. The back contact comprises, prior to firing, a passivating layer onto which is applied an aluminum paste, wherein the aluminum paste comprises aluminum, a glass component, and a vehicle. | 02-14-2013 |
20130071967 | Method for Making a Nickel Film for Use as an Electrode of an N-P Diode or Solar Cell - Disclosed is a method for making a nickel film for use as an electrode of an n-p diode or solar cell. A light source is used to irradiate an n-type surface of the n-p diode or solar cell, thus producing electron-hole pairs in the n-p diode or solar cell. For the electric field effect at an n-p interface, electrons drift to and therefore accumulate on the n-type surface. With a plating agent, the diode voltage is added to the chemical potential for electroless plating of nickel on the n-type surface. The nickel film can be used as a buffer layer between a contact electrode and the diode or solar cell. The nickel film reduces the contact resistance to prevent a reduced efficiency of the diode or solar cell that would otherwise be caused by diffusion of the atoms of the electrode in following electroplating. | 03-21-2013 |
20130071968 | COMPOSITION FOR FORMING P-TYPE DIFFUSION LAYER, METHOD OF FORMING P-TYPE DIFFUSION LAYER, AND METHOD OF PRODUCING PHOTOVOLTAIC CELL - The composition for forming a composition for forming a p-type diffusion layer, the composition containing a glass powder and a dispersion medium, in which the glass powder includes an acceptor element and a total amount of a life time killer element in the glass powder is 1000 ppm or less. A p-type diffusion layer and a photovoltaic cell having a p-type diffusion layer are prepared by applying the composition for forming a p-type diffusion layer, followed by a thermal diffusion treatment. | 03-21-2013 |
20130078759 | COMPOSITION FOR FORMING N-TYPE DIFFUSION LAYER, METHOD OF FORMING N-TYPE DIFFUSION LAYER, AND METHOD OF PRODUCING PHOTOVOLTAIC CELL - The composition for forming an n-type diffusion layer in accordance with the present invention contains a glass powder and a dispersion medium, in which the glass powder includes an donor element and a total amount of the life time killer element in the glass powder is 1000 ppm or less. An n-type diffusion layer and a photovoltaic cell having an n-type diffusion layer are prepared by applying the composition for forming an n-type diffusion layer, followed by a thermal diffusion treatment. | 03-28-2013 |
20130084676 | PRINTING PLATE AND METHOD FOR MANUFACTURING SOLAR CELL ELEMENT USING THE PRINTING PLATE - Disclosed are: a printing plate having improved productivity; and a method for manufacturing a solar cell element, which uses the printing plate. A printing plate according to one embodiment of the present invention comprises: a metal plate; a buffer layer that is arranged on one main surface of the metal plate; and a slit that penetrates through the metal plate and the buffer layer. The slit has a first penetrating part that is located in the metal plate, a second penetrating part that is located in the buffer layer, and a bridge that is arranged inside and across the first penetrating part. When viewed in plan from the above-mentioned main surface side, the buffer layer-side opening edge of the first penetrating part is inside the metal plate-side opening edge of the second penetrating part. | 04-04-2013 |
20130089947 | METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE - Manufacturing a semiconductor device includes preparing a structure including a semiconductor substrate having a first region and a second region, a first insulating film arranged on the first region, a second insulating film arranged on the first insulating film, a third insulating film arranged on the second insulating film, a fourth insulating film arranged on the second region, a fifth insulating film arranged on the fourth insulating film, and a sixth insulating film arranged on the fifth insulating film, etching the second insulating film and the first insulating film under different etching conditions after etching the third insulating film, and continuously etching the fifth insulating film and the fourth insulating film under the same etching conditions after etching the sixth insulating film. | 04-11-2013 |
20130095603 | METHOD FOR THE TREATMENT OF A METAL CONTACT FORMED ON A SUBSTRATE - The invention relates to a method for obtaining a metal contact on a substrate, comprising the following steps: (a) depositing a metal pattern in the form of a paste formed from a mixture of a metal power and a solvent, (b) heating the assembly formed in step (a) in order to evaporate the solvent, and (c) annealing same in order to form a metal contact between the metal pattern and the substrate. The invention is characterised in that it also includes a step (d) in which the metal contact is heated by laser at an energy density of between 0.5 J/cm | 04-18-2013 |
20130095604 | METHOD FOR PRODUCING A METAL CONTACT STRUCTURE OF A PHOTOVOLTAIC SOLAR CELL - A method for producing a metal contact structure of a photovoltaic solar cell, including: applying an electrically non-conductive insulating layer to a semiconductor substrate, applying a metal contact layer to the insulating layer, and generating a plurality of local electrically conductive connections between the semiconductor substrate and the contact layer right through the insulating layer. The metal contact layer is formed using two pastes containing metal particles: the first paste containing metal particles is applied to local regions, and the second paste containing metal particles is applied covering at least the regions covered with the first paste and partial regions located therebetween. By global heating the semiconductor substrate the first paste penetrates the insulating layer and forms an electrically conductive contact directly with the semiconductor substrate, whereas the second paste does not penetrate the insulating layer and is electrically conductively connected to the semiconductor substrate via the first paste. | 04-18-2013 |
20130102109 | METHOD AND APPARATUS OF REMOVING A PASSIVATION FILM AND IMPROVING CONTACT RESISTANCE IN REAR POINT CONTACT SOLAR CELLS - Embodiments of the present invention generally provide improved processes and apparatus for removing passivation layers from a surface of photovoltaic cells and improving contact resistance in rear point contact photovoltaic cells. In one embodiment, a method of processing a solar cell substrate includes providing a substrate having a passivation layer deposited on a first surface of the substrate. The passivation layer is a layer stack comprising an aluminum oxide and a silicon nitride. The method also includes exposing the first surface of the substrate to an etchant, and heating the etchant to dissolve the aluminum oxide of the passivation layer on the first surface. The method may further include forming a metal containing layer on a second surface of the substrate that is opposite to the first surface. | 04-25-2013 |
20130102110 | METHOD AND APPARATUS OF FORMING A CONDUCTIVE LAYER - The present invention generally includes an apparatus and process of forming a conductive layer on a surface of a host substrate, which can be directly used to form a portion of an electronic device. More specifically, one or more of the embodiments disclosed herein include a process of forming a conductive layer on a surface of a substrate using an electrospinning type deposition process. Embodiments of the conductive layer forming process described herein can be used to reduce the number of processing steps required to form the conductive layer, improve the electrical properties of the formed conductive layer and reduce the conductive layer formation process complexity over current state-of-the-art conductive layer formation techniques. Typical electronic device formation processes that can benefit from one or more of the embodiments described herein include, but are not limited to processes used to form solar cells, electronic visual display devices and touchscreen type technologies. | 04-25-2013 |
20130109132 | BACK CONTACT THROUGH-HOLES FORMATION PROCESS FOR SOLAR CELL FABRICATION | 05-02-2013 |
20130109133 | REAR-POINT-CONTACT PROCESS OR PHOTOVOLTAIC CELLS | 05-02-2013 |
20130115732 | Method to Fabricate Multicrystal Solar Cell with Light Trapping Surface Using Nanopore Copolymer - Multi-crystalline silicon processing techniques are provided. In one aspect, a method for roughening a multi-crystalline silicon surface is provided. The method includes the following steps. The multi-crystalline silicon surface is coated with a diblock copolymer. The diblock copolymer is annealed to form nanopores therein. The multi-crystalline silicon surface is etched through the nanopores in the diblock copolymer to roughen the multi-crystalline silicon surface. The diblock copolymer is removed. A multi-crystalline silicon substrate with a roughened surface having a plurality of peaks and troughs is also provided, wherein a distance from one peak to an adjacent peak on the roughened surface is from about 20 nm to about 400 nm. | 05-09-2013 |
20130122644 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME - A semiconductor device comprises a semiconductor substrate, and a multilayer wiring structure arranged on the semiconductor substrate, the multilayer wiring structure including a plurality of first electrically conductive lines, an insulating film covering the plurality of first electrically conductive lines, and a second electrically conductive line arranged on the insulating film so as to intersect the plurality of first electrically conductive lines, wherein the insulating film has gaps in at least some of a plurality of regions where the plurality of first electrically conductive lines and the second electrically conductive line intersect each other, and a width of the gap in a direction along the second electrically conductive line is not larger than a width of the first electrically conductive line. | 05-16-2013 |
20130122645 | PANEL, METHOD FOR PRODUCING PANEL, SOLAR CELL MODULE, PRINTING APPARATUS, AND PRINTING METHOD - A printing apparatus according to the present invention includes a printing section configured to print ink on a surface of a substrate. The printing section prints conductive ink containing a conductive material by offset printing and prints conductive ink containing a conductive material different from the conductive material on the conductive ink by offset printing. Preferably, the printing apparatus further includes a conveyor configured to convey the substrate. Further, the printing section preferably includes a first printing machine configured to print first conductive ink and a second printing machine configured to print second conductive ink. | 05-16-2013 |
20130122646 | DYE-SENSITIZED SOLAR CELL USING NITROGEN DOPED CARBON-NANO-TUBE AND METHOD FOR MANUFACTURING THE SAME - Provided are a dye-sensitized solar cell and a method for manufacturing the dye-sensitized solar cell using a carbon nanotube (CN | 05-16-2013 |
20130130434 | Method for Producing a Photovoltaic Element Comprising a Silicon Dioxide Layer - Production of a photovoltaic element, more particularly of a solar cell. In this case, an additional silicon dioxide layer is used, which is produced by UV irradiation with a wavelength of less than 200 nm and can improve the interface properties on the silicon and can help to reduce disturbances known by the expression “background plating”. | 05-23-2013 |
20130130435 | THICK FILM CONDUCTIVE COMPOSITION AND USE THEREOF - The invention relates to a thick film conductive composition comprising metal particles wherein the specific surface area of the silver particles measured by BET according to ISO 9277 is equal to or more than 1.8 m | 05-23-2013 |
20130130436 | DYE-SENSITIZED SOLAR CELL WITH HYBRID NANOSTRUCTURES AND METHOD FOR FABRICATING WORKING ELECTRODES THEREOF - A dye-sensitized solar cell with hybrid nanostructures comprises a negative-polarity conductive substrate, a metal oxide layer, a positive-polarity conductive substrate and an electrolyte. The metal oxide layer has a plurality of nanoparticles and a plurality of nanotubes. The metal oxide layer and the electrolyte are arranged between the negative-polarity conductive substrate and the positive-polarity conductive substrate. The nanoparticles increase contact area with dye and thus enhance power generation efficiency. The nanotubes increase carrier mobility and thus effectively transfer electricity to electrodes. The solar cell integrates the advantages of nanoparticles and nanotubes and offsets the disadvantages thereof to effectively enhance the photovoltaic conversion efficiency of dye-sensitized solar cells. | 05-23-2013 |
20130137210 | MASKING PASTES AND PROCESSES FOR MANUFACTURING A PARTIALLY TRANSPARENT THIN-FILM PHOTOVOLTAIC PANEL - The present invention relates to masking pastes and methods for removing portions of the back electrode and photovoltaic junction from a photovoltaic laminate to create a partially transparent thin-film photovoltaic panel. Such panels may be useful in window and sun-roof applications. This method can be used to edge-delete and electrically isolate a photovoltaic panel and to reduce the reflectivity of the sun-facing substrate surface. | 05-30-2013 |
20130137211 | METHOD OF MANUFACTURING SOLAR CELL - A second semiconductor layer is formed to cover a first principle surface of a semiconductor substrate including a insulating layer formed on the first principle surface. A portion of the second semiconductor layer formed on the insulating layer is partially removed by etching using a first etchant whose etching rate is higher for the second semiconductor layer than for the insulating layer. A portion of the insulating layer is removed by etching, through the removed portion of the second semiconductor layer, using a second etchant whose etching rate for the insulating layer is higher than that for the second semiconductor layer, thereby exposing apart of the first semiconductor layer. Electrodes are formed on the exposed part of the first semiconductor layer and the second semiconductor layer, respectively. | 05-30-2013 |
20130143353 | PATTERNED IMPLANT OF A DIELECTRIC LAYER - At least part of a dielectric layer is implanted to form implanted regions. The implanted regions affect the etch rate of the dielectric layer during the formation of the openings through the dielectric layer. Metal contacts may be formed within these openings. The dielectric layer, which may be SiO | 06-06-2013 |
20130143354 | TCO MATERIALS FOR SOLAR APPLICATIONS - A method for forming a transparent conductive oxide (TCO) film for use in a TFPV solar device comprises the formation of a tin oxide film doped with between about 5 volume % and about 40 volume % antimony (ATO). Advantageously, the Sb concentration generally ranges from about 15 volume % to about 20 volume % and more advantageously, the Sb concentration is about 19 volume %. The ATO films exhibited almost no change in transmission characteristics between about 300 nm and about 1100 nm or resistivity after either a 15 hour exposure to water or an anneal in air for 8 minutes at 650 C, which indicated the excellent duarability. Control sample of Al doped zinc oxide (AZO) exhibited degradation of resistivity for both a 15 hour exposure to water and an anneal in air for 8 minutes at 650 C. | 06-06-2013 |
20130143355 | Back-Contact for Thin Film Solar Cells Optimized for Light Trapping for Ultrathin Absorbers - Methods for increasing the power output of a TFPV solar panel using thin absorber layers comprise techniques for roughening and/or texturing the back contact layer. The techniques comprise roughening the substrate prior to the back contact deposition, embedding particles in sol-gel films formed on the substrate, and forming multicomponent, polycrystalline films that result in a roughened surface after a wet etch step, etc. | 06-06-2013 |
20130157409 | SELECTIVE ATOMIC LAYER DEPOSITION OF PASSIVATION LAYERS FOR SILICON-BASED PHOTOVOLTAIC DEVICES - Embodiments of the invention generally provide methods for forming a silicon-based photovoltaic device. In one embodiment, a method includes forming a pattern inhibitor layer on a back surface of a substrate, wherein the pattern inhibitor layer covers a first portion of the back surface and a second portion of the back surface remains substantially free of the pattern inhibitor layer. The method further includes forming a passivation layer containing aluminum oxide on the second portion of the back surface and maintaining the pattern inhibitor layer substantially free of the passivation layer during a selective atomic layer deposition (S-ALD) process. Additionally, the method includes removing the pattern inhibitor layer from the back surface to reveal the first portion of the back surface and subsequently forming a contact layer on the first portion of the back surface. | 06-20-2013 |
20130164887 | METHOD FOR MANUFACTURING A SOLAR CELL - In a method for manufacturing a solar cell where the solar cell includes a dopant layer having a first portion of a first resistance and a second portion of a second resistance lower than the first resistance, the method includes ion-implanting a dopant into the semiconductor substrate to form the dopant layer; firstly activating by heating the second portion and activating the dopant at the second portion; and secondly activating by heating the first portion and the second portion and activating the dopant at the first portion and the second portion. | 06-27-2013 |
20130164888 | Graphene Solar Cell - A solar cell includes a semiconductor portion, a graphene layer disposed on a first surface of the semiconductor portion, and a first conductive layer patterned on the graphene layer, the first conductive layer including at least one bus bar portion and a plurality of fingers extending from the at least one bus bar portion. | 06-27-2013 |
20130171770 | METHOD OF PREPARING OPTO-ELECTRONIC DEVICE - A method is provided to produce an opto-electronic device comprising a substrate, a first electrode layer, a second electrode layer of opposite polarity to said first electrode layer, any interlayers and, between said first and second electrode layers, a first functional material in interfacial contact with a second functional material, wherein the first functional material has the structure of a laterally porous film and the second functional material is a film disposed over and interpenetrating with the film of the first functional material. | 07-04-2013 |
20130178011 | DOPANT COMPOSITIONS AND THE METHOD OF MAKING TO FORM DOPED REGIONS IN SEMICONDUCTOR MATERIALS - Dopant compositions comprising a semiconductor material are described. Examples of dopant compositions comprise a particulate dopant component and a liquid or paste component, or comprise a dopant component and a particulate silicon component. Methods of forming doped regions in a semiconductor substrate material using the dopant compositions are described. A dopant composition including a dopant particulate component is described as a dopant source in a method for the formation of radiation-fired or radiation-doped contacts, for example in the formation of laser-fired or laser-doped contacts. Examples of the method find application in relation to the manufacture of photovoltaic cells. The use of doped particulate material, for example a composition including doped silicon powder, may reduce the likelihood of damage to the substrate. | 07-11-2013 |
20130183795 | SOLAR CELL BACK SIDE ELECTRODE - A method of manufacturing a solar cell back side electrode comprising: (a) preparing a substrate comprising a semiconductor layer and a passivation layer formed on the back side of the semiconductor layer, wherein the passivation layer has one or more openings; (b) applying, onto the back side of the substrate, an aluminum paste comprising, (i) an aluminum powder, (ii) a glass frit comprising 30 to 70 cation mole percent of lead, 1 to 40 cation mole percent of silicon and 10 to 65 cation mole percent of boron, and 1 to 25 cation mole percent of aluminum, based on the total mole of cationic components in the glass frit, and (iii) an organic medium, wherein the aluminum paste covers the openings; and (c) firing the aluminum paste in a furnace, wherein the aluminum paste does not fire through the passivation layer during the firing. | 07-18-2013 |
20130183796 | METHODS OF MANUFACTURING SOLAR CELL DEVICES - Embodiments of the present invention are directed to a process for making solar cells. Particularly, embodiments of the invention provide simultaneously co-firing (e.g., thermally processing) metal layers disposed both on a first and a second surface of a solar cell substrate to complete the metallization process in one step. By doing so, both the metal layers formed on the first and the second surfaces of the solar cell substrate are co-fired (e.g., simultaneously thermally processed), thereby eliminating manufacturing complexity, cycle time and cost to produce the solar cell device. Embodiments of the invention may also provide a method and solar cell structure that requires a reduced amount of a metallization paste on a rear surface of the substrate to form a rear surface contact structure and, thus, reduce the cost of the formed solar cell device. | 07-18-2013 |
20130189811 | METHOD OF MANUFACTURING DYE SENSITIZED SOLAR BATTERY AND SOLAR BATTERY ASSEMBLING APPARATUS FOR THE SAME - Disclosed are a method of manufacturing a dye sensitized solar battery and a solar battery assembling apparatus. The method includes: forming electrode pads on electrodes of respective solar battery sub modules; applying a conductive adhesive on the electrode; and overlapping the electrodes of the solar battery sub modules, applying a current to the electrode pads, and then heating and hardening the conductive adhesive. | 07-25-2013 |
20130203211 | METHOD FOR COATING A SUBSTRATE WITH ALUMINIUM-DOPED ZINC OXIDE - A method coats a substrate with an aluminum-doped zinc oxide. The method includes generating a nucleation coating between 5 nm and 400 nm thick and having zinc oxide or doped zinc oxide, in particular aluminum-doped zinc oxide, on a surface of a substrate by atomizing a solid target. A quasi-epitaxially propagating top coating is generated and contains an aluminum-doped zinc oxide on the nucleation coating and the top coating is wet chemically etched. | 08-08-2013 |
20130203212 | METHOD FOR FABRICATING SOLAR CELL - A method of fabricating a solar cell on a conveyer belt is provided. The method includes the following steps. A first surface of an aluminum foil is coated with a layer of phosphorous mixed with a plurality of graphite powders and put on the conveyer belt. A first thermal treatment is performed to activate a portion of the aluminum foil and the phosphorous layer on the first surface to form an aluminum phosphide (AlP) layer. A molten silicon material is spray-coated on a second surface of the remaining aluminum foil, and a second thermal treatment is performed to make the silicon material transferring into a p-type polySi layer on the n-type AlP layer. A solar cell including the n-type AlP layer and the p-type polySi layer is formed, and the solar cell is respectively annealed and cooled down in a first and a second vertical stack. | 08-08-2013 |
20130203213 | METHOD FOR MANUFACTURING PHOTOVOLTAIC CELL - Provided is a method for manufacturing a photovoltaic cell capable of efficiently preventing deterioration of photoelectric conversion performance caused by adhesion of a foreign substance and occurrence of leakage without lowering manufacturing efficiency. The method for manufacturing a photovoltaic cell having a structure in which a first electrode, a photoelectric conversion layer and a second electrode are laminated on one surface of a substrate in this order, and the photoelectric conversion layer is arranged as a multi-junction type photoelectric conversion layer in which a plurality of photoelectric conversion units are laminated while each photoelectric conversion unit has a plurality of layers, the method including at least one step in which a surface of a layer formed in a process after the thickest layer in a photoelectric conversion unit is formed and before the thickest layer in any one of photoelectric conversion units further laminated is formed is washed in the process. | 08-08-2013 |
20130217178 | METHOD AND APPARATUS FOR MANUFACTURING A THIN FILM PHOTOVOLTAIC CELL - A method for manufacturing a thin film photovoltaic cell having a first electrode layer, a photoelectric conversion layer including a plurality of photoelectric conversion cells, and a second electrode layer sequentially formed on a substrate. The method includes calculating a difference between a weighted mean wavelength of spectral sensitivity of the photoelectric conversion layer and a weighted mean wavelength of a spectrum of incident sunlight that is at a place of installation of the thin film photovoltaic cell and is in a wavelength range contributing to power generation by the thin film photovoltaic cell, and determining a structure of the photoelectric conversion cells, such that the difference is confined to a predetermined range. | 08-22-2013 |
20130224905 | SILVER PASTE AND USE THEREOF IN THE PRODUCTION OF SOLAR CELLS - A silver paste comprising particulate silver, at least one glass frit, and an organic vehicle, wherein the particulate silver includes 10 to 100 wt-% of spherically-shaped silver particles, based on the total weight of the particulate silver, wherein the spherically-shaped silver particles have an average particle size in the range of 1 to 3 μm, a crystallite size in the range of 40 to 60 nm and a smooth particle surface. | 08-29-2013 |
20130224906 | METHOD AND DEVICE FOR PRODUCING A METALLIC CONTACT STRUCTURE FOR MAKING ELECTRICAL CONTACT WITH A PHOTOVOLTAIC SOLAR CELL - A method for producing a metallic contact structure for making electrical contact with a photovoltaic solar cell, wherein, in order to create the contact structure, a paste, which contains metal particles, is applied to a surface of a carrier substrate via at least one dispensing opening, wherein the dispensing opening and the carrier substrate are moved in relation to one another during the dispensing of the paste. The paste is circulated in a circulating region, and in each case a part of the paste is branched off out of the circulating region at a plurality of branching points and each branching point is assigned at least one dispensing opening, via which the paste branched off at the branching point is applied to the surface of the carrier substrate, wherein the paste flows through a flow path having a length of less than 1 cm in each case between being branched off out of the circulating region and being dispensed from the dispensing opening assigned to the branching point. A device for producing a metallic contact structure for making electrical contact with a photovoltaic solar cell is also provided. | 08-29-2013 |
20130224907 | METHODS OF MANUFACTURING PHOTOVOLTAIC ELECTRODES - A photovoltaic electrode is made by the following steps: (a) depositing on a substrate a dispersion comprising powdered semiconductor particles in a dispersion medium; (b) removing the majority of the dispersion medium to leave the powdered semiconductor particles in a deposition layer on the substrate; (c) creating a plasma using microwave energy excitation; (d) exposing the deposition layer to said microwave-excited plasma for a sufficient time to sinter the nanoparticles thereby adhering them to the substrate; and (e) absorbing a dye into said sintered deposition layer. The electrode thus obtained exhibits improved performance relative to conventional sintered electrodes. | 08-29-2013 |
20130244372 | SILICON PHOTOVOLTAIC ELEMENT AND FABRICATION METHOD - A method of forming a photovoltaic device that includes providing an absorption layer of a first crystalline semiconductor material having a first conductivity type, and epitaxially growing a second crystalline semiconductor layer of a second conductivity type that is opposite the first conductivity type. The first conductivity type may be p-type and the second conductivity type may be n-type, or the first conductivity type may be n-type and the second conductivity type may be p-type. The temperature of the epitaxially growing the second crystalline semiconductor layer does not exceed 500° C. Contacts are formed in electrical communication with the absorption layer and the second crystalline semiconductor layer. | 09-19-2013 |
20130244373 | SOLAR CELL APPARATUS AND METHOD OF FABRICATING THE SAME - A solar cell apparatus and a method of fabricating the same are provided. The solar cell apparatus includes a substrate, a back electrode layer, a light absorption layer, and a front electrode layer. The back electrode layer is on the substrate. The light absorption layer is on the back electrode layer. The front electrode layer is on the light absorption layer. The back electrode layer is provided with recesses. Inner surfaces of the back electrode layer defining the recesses are inclined from a top surface of the substrate. | 09-19-2013 |
20130267060 | APPARATUS AND METHOD FOR FORMING A TRANSPARENT CONDUCTIVE OXIDE LAYER OVER A SUBSTRATE USING A LASER - An apparatus and method for converting an amorphous transparent conductive oxide to a crystalline form with the assistance of irradiation of a laser. | 10-10-2013 |
20130273687 | SOLAR CELL AND MANUFACTURING METHOD OF THE SAME - A method for manufacturing a solar cell, comprising steps of: a) providing a semiconductor substrate having a light-receiving side and a back side, wherein a passivation layer is formed on the back side; b) forming a silver conductor pattern on the back side of the semiconductor substrate; c) forming an aluminum conductor pattern on the back side of the semiconductor substrate, at least part of the aluminum conductor pattern being superimposed on at least part of the silver conductor pattern; and d) firing the silver conductor pattern and the aluminum conductor pattern at the same time, thereby forming an electric contact between the semiconductor substrate and the aluminum conductor pattern by way of fire through in a region where the silver conductor pattern and the aluminum conductor pattern are superimposed. | 10-17-2013 |
20130288424 | CONTACT AND INTERCONNECT METALLIZATION FOR SOLAR CELLS - A fabrication line includes a texturizing module configured to texture a substrate, an emitter module configured to form an emitter region, a passivation layer module configured to form a passivation layer, a barrier contact module configured to form a barrier contact region, a firing module configured to anneal the barrier contact region, a top metal contact module configured to form a top metal contact region, and a soldering module configured to solder the barrier contact region to the top metal contact region. The modules are integrated by one or more automated substrate handlers into a single fabrication line. A method for fabricating a solar cell includes sequentially, in an automated fabrication line: doping a dopant in a substrate; disposing a passivation layer; disposing and annealing a barrier metal paste to form a barrier contact; and disposing and annealing a metal contact paste to form a top metal contact region. | 10-31-2013 |
20130288425 | END POINT DETECTION FOR BACK CONTACT SOLAR CELL LASER VIA DRILLING - Methods and structures for fabricating photovoltaic back contact solar cells having multi-level metallization using laser via drilling end point detection are provided. | 10-31-2013 |
20130309807 | PATTERN FORMING METHOD AND MANUFACTURING METHOD OF SOLAR BATTERY - A pattern forming method of forming a pattern by printing a pattern formation paste containing a pattern forming material and a binder component on a substrate having irregularities on a surface includes a foundation-layer forming step of forming a foundation layer by printing a foundation layer paste containing a same binder component as the binder component contained in the pattern formation paste on the surface of the substrate by the screen printing method in such a manner as to cover the irregularities with the foundation layer paste, and a paste-pattern forming step of forming a pattern of the paste by printing the pattern formation paste on the foundation layer by the screen printing method. | 11-21-2013 |
20130316492 | METHOD AND APPARATUS FOR FORMING PATTERN - There is provided a pattern forming apparatus which transfers a paste to a predetermined position of a pattern forming object fixed to a table through a pattern forming mask having opening portions at predetermined positions using a discharge mechanism part. To realize a pattern forming which allows the stable forming of a fine pattern with high accuracy and allows the paste to be surely filled into fine through holes, a corner portion of a distal end of the discharge mechanism part in contact with the pattern forming mask is formed into a concave shape, and a surface of the distal end portion of the discharge mechanism part including the concave shaped portion is covered with a film having liquid repellency so that the rolling of the paste is accelerated in a region formed by the concave shaped portion to form a fine pattern with high accuracy. | 11-28-2013 |
20130337604 | METHOD OF MANUFACTURING THICK-FILM ELECTRODE - A method of manufacturing a thick-film electrode comprising the steps of: applying onto a substrate a conductive paste comprising a conductive powder, a glass frit, 3.5 to 12.5 weight percent of an organic polymer, and a solvent, wherein the weight percent is based on the total weight of the conductive powder, the glass frit, and the organic polymer; firing the applied conductive paste to form the thick-film electrode, wherein thickness of the thick-film electrode is 1 to 10 μm; and soldering a wire to the thick-film electrode. | 12-19-2013 |
20130344647 | METHOD FOR MANUFACTURING SOLAR CELL AND DOPANT LAYER THEREOF - A method for manufacturing a dopant layer of a solar cell according to an embodiment of the invention includes: ion-implanting a dopant to a substrate; and heat-treating for an activation of the dopant. In the heat-treating for the activation, the substrate is heat-treated at a first temperature after an anti-out-diffusion film is formed at a temperature lower than the first temperature under a first gas atmosphere. | 12-26-2013 |
20140011318 | METHODS AND SYSTEMS FOR ULTRASONIC SPRAY SHAPING - New and improved ultrasonic spray shaping assemblies, components thereof, and methods for using the assemblies. An ultrasonic spray shaping assembly includes jet block and impact jet components to receive and redirect a single gas stream, whereby to use the single gas stream to shape an ultrasonic spray plume in a desired shape, particularly into a desired width of the plume. Modifications to the components, such as relative positioning, can be used to alter the shape of the spray plume. The present invention can be fabricated in a compact, lightweight design. It has many applications, including but not limited to, the deposition of flux onto a printed circuit board. | 01-09-2014 |
20140024170 | Methods for Minimizing Edge Peeling in the Manufacturing of BSI Chips - A method includes forming top metal lines over a semiconductor substrate, wherein the semiconductor substrate is a portion of a wafer having a bevel. When the top metal lines are exposed, an etchant is supplied on the bevel, wherein regions of the wafer sprayed with the etchant has an inner defining line forming a first ring having a first diameter. A trimming step is performed to trim an edge portion of the wafer, wherein an edge of a remaining portion of the wafer has a second diameter substantially equal to or smaller than the first diameter. | 01-23-2014 |
20140030844 | BIFACIAL SOLAR CELL USING ION IMPLANTATION - An improved bifacial solar cell is disclosed. In some embodiments, the front side includes an n-type field surface field, while the back side includes a p-type emitter. In other embodiments, the p-type emitter is on the front side. To maximize the diffusion of majority carriers and lower the series resistance between the contact and the substrate, the regions beneath the metal contacts are more heavily doped. Thus, regions of higher dopant concentration are created in at least one of the FSF or the emitter. These regions are created through the use of selective implants, which can be performed on one or two sides of the bifacial solar cell to improve efficiency. | 01-30-2014 |
20140038346 | THICK-FILM PASTE CONTAINING LEAD-VANADIUM-BASED OXIDE AND ITS USE IN THE MANUFACTURE OF SEMICONDUCTOR DEVICES - The present invention provides a thick-film paste for printing the front side of a solar cell device having one or more insulating layers and a method for doing so. The thick-film paste comprises a source of an electrically conductive metal and a lead-vanadium-based oxide dispersed in an organic medium. The invention also provides a semiconductor device comprising an electrode formed from the thick-film paste. | 02-06-2014 |
20140038347 | MANUFACTURING METHOD OF ELECTRODE OF SOLAR CELL - A manufacturing method of an electrode of a solar cell is provided. The manufacturing method of the electrode of the solar cell includes following steps. A laser doping process is performed to form a selective emitter on a substrate. A laser marking process is performed to form alignment markers on the substrate. The laser doping process and the laser marking process are performed in a same process chamber. An electrode screen printing process is performed to form an electrode on the selective emitter according to the alignment markers. Relative displacement between the alignment markers and the laser doping area (the selective emitter) is avoided so as to reduce the error of the subsequent screen printing process. | 02-06-2014 |
20140045296 | High Voltage Opto-Electric Switch - Improvements for optically activated electric switches are considered. Techniques are presented for reducing the peaking of the electric field at edge of the contacts. For the body of the opto-switch, methods are described to increase the number of traps. Improvements in illumination are also discussed. | 02-13-2014 |
20140065764 | METHOD FOR MANUFACTURING A PHOTOVOLTAIC CELL WITH A LOCALLY DIFFUSED REAR SIDE - A method for manufacturing a photovoltaic cell with a locally diffused rear side, comprising steps of: (a) providing a doped silicon substrate, the substrate comprising a front, sunward facing, surface and a rear surface; (b) forming a silicon dioxide layer on the front surface and the rear surface; (c) depositing a boron-containing doping paste on the rear surface in a pattern, the boron-containing paste comprising a boron compound and a solvent; (d) depositing a phosphorus-containing doping paste on the rear surface in a pattern, the phosphorus-containing doping paste comprising a phosphorus compound and a solvent; (e) heating the silicon substrate in an ambient to a first temperature and for a first time period in order to locally diffuse boron and phosphorus into the rear surface of the silicon substrate. | 03-06-2014 |
20140080252 | SOLID-STATE IMAGING DEVICE, METHOD OF MANUFACTURING SOLID-STATE IMAGING DEVICE, AND ELECTRONIC APPARATUS - A solid-state imaging device including a substrate, a through-hole, a vertical gate electrode, and a charge fixing film. A photoelectric conversion unit generating signal charges in accordance with the amount of received light is formed in the substrate. The through-hole is formed from a front surface side through a rear surface side of the substrate. The vertical gate electrode is formed through a gate insulating film in the through-hole and reads out the signal charges generated by the photoelectric conversion unit to a reading-out portion. The charge fixing film has negative fixed charges formed to cover a portion of the inner circumferential surface of the through-hole at the rear surface side of the substrate while covering the rear surface side of the substrate. | 03-20-2014 |
20140087514 | PHOTOELECTRIC CONVERTER, METHOD OF MANUFACTURING PHOTOELECTRIC CONVERTER AND IMAGING DEVICE - A photoelectric converter includes a pair of electrodes and a plurality of organic layers. The pair of electrodes is provided above a substrate. The plurality of organic layers is interposed between the pair of electrodes and includes a photoelectric conversion layer and a given organic layer being formed on one electrode of the pair of electrodes. The one electrode is one of pixel electrodes arranged two-dimensionally. The given organic layer has a concave portion that is formed in a corresponding position located above a step portion among the arranged pixel electrodes. An angle θ of the concave portion is less than 50°, where an inclination angle of a tangent plane at a given point on the concave portion to a surface plane of the substrate is defined as θ. | 03-27-2014 |
20140087515 | METHOD FOR THE CONTACT SEPARATION OF ELECTRICALLY-CONDUCTING LAYERS ON THE BACK CONTACTS OF SOLAR CELLS AND CORRESPONDING SOLAR CELL - A method for fabricating a solar cell including a semiconductor substrate is proposed where electrical contacting is made on the back side of the semiconductor substrate. The back side of the semiconductor substrate has locally doped regions. The adjacent regions exhibit different doping from the region. The two regions are initially coated with electrically conductive material over the entire area. So that the conductive material does not short-circuit the solar cell, the two regions are covered with a thin electrically insulating layer at least at the region boundaries. The electrically conductive layer is separated by applying an etch barrier layer over the entire surface which is then removed free from masking and selectively e.g. by laser ablation, locally above the insulating layer. The conductive layer is locally removed in the area of the openings of the etch barrier layer by subsequent action of an etching solution. | 03-27-2014 |
20140113404 | METHOD FOR MANUFACTURING AN OPTO-MICROELECTRONIC DEVICE - Method for manufacturing a microelectronic device from a first substrate ( | 04-24-2014 |
20140127853 | DOUBLE LAYERED TRANSPARENT CONDUCTIVE OXIDE FOR REDUCED SCHOTTKY BARRIER IN PHOTOVOLTAIC DEVICES - A device and method for fabricating a photovoltaic device includes forming a double layer transparent conductive oxide on a transparent substrate. The double layer transparent conductive oxide includes forming a doped electrode layer on the substrate, and forming a buffer layer on the doped electrode layer. The buffer layer includes an undoped or p-type doped intrinsic form of a same material as the doped electrode layer. A light-absorbing semiconductor structure includes a p-type semiconductor layer on the buffer layer, an intrinsic layer and an n-type semiconductor layer. | 05-08-2014 |
20140127854 | Silk-Screen Stencil for Printing onto a Photovoltaic Cell - Stencil for a screen-printing system, comprising slits ( | 05-08-2014 |
20140134789 | Germanium Photodetector - A method for forming a photodetector device includes forming an insulator layer on a substrate, forming a germanium (Ge) layer on the insulator layer and a portion of the substrate, forming a second insulator layer on the Ge layer, patterning the Ge layer, forming a capping insulator layer on the second insulator layer and a portion of the first insulator layer, heating the device to crystallize the Ge layer resulting in an single crystalline Ge layer, implanting n-type ions in the single crystalline Ge layer, heating the device to activate n-type ions in the single crystalline Ge layer, and forming electrodes electrically connected to the single crystalline n-type Ge layer. | 05-15-2014 |
20140134790 | Germanium Photodetector - A method for forming a photodetector device includes forming an insulator layer on a substrate, forming a germanium (Ge) layer on the insulator layer and a portion of the substrate, forming a second insulator layer on the Ge layer, patterning the Ge layer, forming a capping insulator layer on the second insulator layer and a portion of the first insulator layer, heating the device to crystallize the Ge layer resulting in an single crystalline Ge layer, implanting n-type ions in the single crystalline Ge layer, heating the device to activate n-type ions in the single crystalline Ge layer, and forming electrodes electrically connected to the single crystalline n-type Ge layer. | 05-15-2014 |
20140147963 | Screen-Printing System for a Photovoltaic Cell, and Related Methods - Screen-printing system comprising a metal stencil ( | 05-29-2014 |
20140154836 | PLATING EQUIPMENT FOR SOLAR CELL WAFER USING ELECTROPLATING AND LIGHT-INDUCED PLATING JOINTLY AND METHOD OF THE SAME - The present invention relates to plating equipment and method for a solar cell wafer using electroplating and light-induced plating jointly. The plating equipment includes a jig allowing a wafer ( | 06-05-2014 |
20140162399 | METHODS FOR ELECTROLESS CONDUCTIVITY ENHANCEMENT OF SOLAR CELL METALLIZATION - A method for forming a contact region for a solar cell is disclosed. The method includes depositing a paste composed of a first metal above a substrate of the solar cell, curing the paste to form a first metal layer, electrolessly plating a second metal layer on the first metal layer and electrolyticly plating a third metal layer on the second metal layer, where the second metal layer electrically couples the first metal layer to the third metal layer. The method can further include electrolyticly plating a fourth metal layer on the third metal layer. | 06-12-2014 |
20140170807 | MONOLITHIC INTEGRATION OF HETEROJUNCTION SOLAR CELLS - A method for fabricating a device with integrated photovoltaic cells includes supporting a semiconductor substrate on a first handle substrate and doping the semiconductor substrate to form doped alternating regions with opposite conductivity. A doped layer is formed over a first side the semiconductor substrate. A conductive material is patterned over the doped layer to form conductive islands such that the conductive islands are aligned with the alternating regions to define a plurality of photovoltaic cells connected in series on a monolithic structure. | 06-19-2014 |
20140170808 | ZINC OXIDE FILM METHOD AND STRUCTURE FOR CIGS CELL - A method for fabricating a thin film photovoltaic device. The method includes providing a substrate comprising an absorber layer and an overlying window layer. The substrate is loaded into a chamber and subjected to a vacuum environment. The vacuum environment is at a pressure ranging from 0.1 Torr to about 0.02 Torr. In a specific embodiment, a mixture of reactant species derived from diethylzinc species, water species and a carrier gas is introduced into the chamber. The method further introduces a diborane species using a selected flow rate into the mixture of reactant species. A zinc oxide film is formed overlying the window layer to define a transparent conductive oxide using the selected flow rate to provide a resistivity of about 2.5 milliohm-cm and less and an average grain size of about 3000 to 5000 Angstroms | 06-19-2014 |
20140186994 | COMPOSITION FOR SOLAR CELL ELECTRODES AND ELECTRODE FABRICATED USING THE SAME - A composition for solar cell electrodes, a solar cell electrode prepared from the composition, and a method of manufacturing the same, the composition including silver powder; silver nitrate; glass frit; and an organic vehicle, wherein the silver nitrate is present in an amount of about 0.1 wt % to about 30 wt %, based on a total weight of the composition. | 07-03-2014 |
20140199805 | TiO2 aerogel-based photovoltaic electrodes and solar cells - A photoelectrode is disclosed having a conductive lead and a titania aerogel in electrical contact with the lead. The aerogel is coated with a photosensitive dye. The photoelectrode may be made by forming a film of a titania aerogel paste on a conductive substrate and coating the film with a dye. | 07-17-2014 |
20140199806 | DIELECTRIC STRUCTURES IN SOLAR CELLS - A dielectric, structure and a method of forming a dielectric structure for a rear surface of a silicon solar cell are provided. The method comprises forming a first dielectric layer over the rear surface of the silicon solar cell, and then depositing a layer of metal such as aluminum over the first dielectric layer. The metal layer is then anodized to form a porous layer and a material layer is deposited over a surface of the porous layer such that the material deposits on the surface of the porous layer without contacting the silicon surface. | 07-17-2014 |
20140220731 | BINDER-FREE PROCESS FOR PREPARING PHOTOANODE OF FLEXIBLE DYE-SENSITIZED SOLAR CELL - The present invention provides a binder-free process for preparing a photoanode of flexible dye-sensitized solar cell, comprising: (a) preparing a TiO | 08-07-2014 |
20140220732 | CONDUCTIVE PASTE FOR FRONT ELECTRODE OF SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THEREOF - The present invention provides a conductive paste characterized by a crystal-based corrosion binder being combined with a glass frit and mixed with a metallic powder and an organic carrier. Methods for preparing each components of the conductive paste are disclosed including several embodiments of prepare Pb—Te—O-based crystal corrosion binder characterized by melting temperatures in a range of 440° C. to 760° C. and substantially free of any glass softening transition upon increasing temperature. Method for preparing the conductive paste includes mixture of the components and a grinding process to ensure all particle sizes in a range of 0.1 to 5.0 microns. Method of applying the conductive paste for the formation of a front electrode of a semiconductor device is presented to illustrate the effectiveness of the crystal-based corrosion binder in transforming the conductive paste to a metallic electrode with good ohmic contact with semiconductor surface. | 08-07-2014 |
20140235011 | PROCESS OF MANUFACTURING OF THE CATALYTIC LAYER OF THE COUNTER-ELECTRODES OF DYE-SENSITIZED SOLAR CELLS - A process of manufacturing the catalytic layer of the counter-electrodes of dye-sensitized solar cells is described. The process has the following steps: depositing a catalyst precursor paste or precursor solution layer over the counter-electrodes conductive and transparent substrates, by screen printing, doctor blade, spin coating or brush,and irradiating the catalyst precursor paste or precursor solution layer with a continuous wave or pulsed laser beam having a wavelength in the range of infrared, visible, or ultraviolet, thus curing the precursor and forming a catalyst layer over the conductive and transparent counter-electrode substrates. | 08-21-2014 |
20140242747 | Thin Film Deposition of Materials by External Induced Release from a Ribbon Tape - A process where a printed ink is placed onto a sacrificial ribbon. The ink is then converted to a metal film and transferred to a substrate, such as a silicon solar cell at very low temperatures. Further low-temperature processing may be utilized to form an ohmic contact. This process provides the speed and low-cost structure of ink and paste based processing with the diffusion control of vacuum deposited films. | 08-28-2014 |
20140256083 | High Speed Copper Plating Process - A copper electrolyte comprising a copper nitrate salt is described. The electrolyte is suitable for use in a light induced plating process for metallizing contacts in a photovoltaic solar cell. A method of metallizing an electrical contact in a photovoltaic solar cell using the copper electrolyte is also described. | 09-11-2014 |
20140256084 | SOLAR CELL AND METHOD FOR MANUFACTURING THE SAME - A method for manufacturing a solar cell is discussed. The method may include injecting first impurity ions at a first surface of a substrate by using a first ion implantation method to form a first impurity region, the substrate having a first conductivity type and the first impurity ions having a second conductivity type, and the first impurity region having the second conductivity type; heating the substrate with the first impurity region to activate the first impurity region to form an emitter region from the first impurity region; etching the emitter region from a surface of the emitter region to a predetermined depth to form an emitter part from the emitter region; and forming a first electrode on the emitter part to connect to the emitter part and a second electrode on a second surface of the substrate to connect to the second surface of the substrate. | 09-11-2014 |
20140273338 | METHODS OF FORMING SOLAR CELLS AND SOLAR CELL MODULES - Embodiments of the present invention are directed to processes for making solar cells by simultaneously co-firing metal layers disposed both on a first and a second surface of a bifacial solar cell substrate. Embodiments of the invention may also provide a method forming a solar cell structure that utilize a reduced amount of a silver paste on a front surface of the solar cell substrate and a patterned aluminum metallization paste on a rear surface of the solar cell substrate to form a rear surface contact structure. Embodiments can be used to form passivated emitter and rear cells (PERC), passivated emitter rear locally diffused solar cells (PERL), passivated emitter, rear totally-diffused (PERT), “iPERC,” Crystalline Reduced-cost Aluminum Fire-Through (CRAFT), pCRAFT, nCRAFT or other high efficiency cell concepts. | 09-18-2014 |
20140287551 | THERMAL PRE-TREATMENT PROCESS FOR SODA LIME GLASS SUBSTRATE FOR THIN FILM PHOTOVOLTAIC MATERIALS - A method for fabricating a thin film solar cell includes providing a soda lime glass substrate comprising a surface region, treating the surface region with one or more cleaning process including an aqueous solution to remove one or more contaminants and/or particulates, and forming a lower electrode layer overlying the surface region. The method also includes performing a thermal treatment process to remove any residual water species to substantially less than a monolayer of water species from the lower electrode layer and soda lime glass substrate. The thermal treatment process changes a temperature of the soda lime glass substrate from a first temperature to a second temperature to pre-heat the soda lime glass substrate. Additionally, the method includes transferring the soda lime glass substrate, which has been preheated, to a deposition chamber and forming a layer of photovoltaic material overlying the lower electrode layer within the deposition chamber. | 09-25-2014 |
20140295614 | SOLAR CELL AND METHOD OF MANUFACTURING THE SAME - A solar cell and a method of manufacturing a solar cell are disclosed. The solar cell includes forming a first doped region of a first conductive type and a second doped region of a second conductive type opposite the first conductive type on a semiconductor substrate of the first conductive type; forming a passivation layer on the semiconductor substrate to expose a portion of each of the first and second doped regions; and forming a first electrode electrically connected to the first doped region and a second electrode electrically connected to the second doped region, wherein the forming of the first and second electrodes includes forming a metal seed layer directly contacting the first doped region and a metal seed layer directly contacting the second doped region, and forming a conductive layer on the metal seed layer of each of the first and second electrodes. | 10-02-2014 |
20140308775 | PHOTOVOLTAIC POWER DEVICE AND MANUFACTURING METHOD THEREOF - A photovoltaic power device includes a P-type silicon substrate, a low-resistance N-type diffusion layer diffused with an N-type impurity in a first concentration formed at a light-incidence surface side, grid electrodes formed on the low-resistance N-type diffusion layer, a P+ layer formed on a back surface, and a back surface electrode formed on the P+ layer. The photovoltaic power device has concave portions provided at a predetermined interval to reach the silicon substrate from an upper surface of the low-resistance N-type diffusion layer, and an upper surface of a region between adjacent concave portions includes the low-resistance N-type diffusion layer. A high-resistance N-type diffusion layer diffused with an N-type impurity in a second concentration, which is lower than the first concentration, is formed in a range of a predetermined depth from a formation surface of the concave portions. | 10-16-2014 |
20140322860 | METAL CONTACT SCHEME FOR SOLAR CELLS - A method of depositing metal on an exposed surface of a p-type semiconductor region of a semiconductor device comprising a p-n junction is disclosed, the method comprising: immersing the exposed surface of the p-type semiconductor region on which the metal is to be deposited in a solution of metal ions; producing an electric field in the semiconductor device such that the p-n junction is forward biased; electrochemically depositing the metal on the exposed surface of the p-type semiconductor region of the semiconductor device by reduction of metal ions in the solution. | 10-30-2014 |
20140322861 | SOLAR BATTERY, MANUFACTURING METHOD THEREOF, AND SOLAR BATTERY MODULE - A solar battery includes a transparent electrode and a collector electrode in this order on the surface of a light incident surface side of a photoelectric conversion layer. The collector electrode is formed in a predetermined region on the photoelectric conversion layer and a first transparent electrode of the transparent electrode is formed only in a region right under the collector electrode in contact with the photoelectric conversion layer and the collector electrode. A second transparent electrode of the transparent electrode is formed in a region on the photoelectric conversion layer where the collector electrode is not formed and on the collector electrode in contact with the photoelectric conversion layer or the collector electrode. The carrier concentration of the first transparent electrode is higher than the carrier concentration of the second transparent electrode. | 10-30-2014 |
20140329356 | Curable Acrylate Based Printing Medium - An acrylate-based curable printing medium is disclosed. Acrylates, in the form of monomers, dimers, trimers and oligomers, as well as resins, form an interpenetrating polymer network by crosslinking, which is effected by heat, and optionally peroxide curing agents. Formulations can be tailored to achieve desired properties of the cured polymer including film hardness, burnout properties, and adhesion to glass. Such properties are adjusted by manipulating the relative proportions of the acrylic monomers, oligomers and resins that are used as a ceramic medium or vehicle. | 11-06-2014 |
20140335650 | GRAPHENE PHOTODETECTOR - A set of buried electrodes are embedded in a dielectric material layer, and a graphene layer having a doping of a first conductivity type are formed thereupon. A first upper electrode is formed over a center portion of each buried electrode. Second upper electrodes are formed in regions that do not overlie the buried electrodes. A bias voltage is applied to the set of buried electrodes to form a charged region including minority charge carriers over each of the buried electrodes, and to form a p-n junction around each portion of the graphene layer overlying a buried electrode. Charge carriers generated at the p-n junctions are collected by the first upper electrodes and the second upper electrodes, and are subsequently measured by a current measurement device or a voltage measurement device. | 11-13-2014 |
20140335651 | INKS AND PASTES FOR SOLAR CELL FABRICATION - A silicon solar cell is formed with an N-type silicon layer on a P-type silicon semiconductor substrate. An aluminum ink composition is printed on the back of the silicon wafer to form back contact electrodes. The back contact electrodes are sintered to produce an ohmic contact between the electrodes and the silicon layers. The aluminum ink composition may include aluminum powders, a vehicle, an inorganic polymer, and a dispersant. Other electrodes on the solar cell can be produced in a similar manner with the aluminum ink composition. | 11-13-2014 |
20140349442 | THIN FILM TYPE SOLAR CELL AND METHOD FOR MANUFACTURING THE SAME - A thin film type solar cell and a method for manufacturing the same is disclosed, the thin film type solar cell including a front electrode formed on a substrate; a semiconductor layer formed on the front electrode; a transparent conductive layer formed on the semiconductor layer; a rear electrode formed over the transparent conductive layer; and a buffer layer, formed between the transparent conductive layer and the rear electrode, for reducing an electric resistance of the rear electrode and enhancing an adhesive strength between the transparent conductive layer and the rear electrode. | 11-27-2014 |
20140357014 | HIGH EFFICIENCY SOLAR CELL USING IIIB MATERIAL TRANSITION LAYERS - A solar cell including a base of single crystal silicon with a cubic crystal structure and a single crystal layer of a second material with a higher bandgap than the bandgap of silicon. First and second single crystal transition layers are positioned in overlying relationship with the layers graduated from a cubic crystal structure at one surface to a hexagonal crystal structure at an opposed surface. The first and second transition layers are positioned between the base and the layer of second material with the one surface lattice matched to the base and the opposed surface lattice matched to the layer of second material. | 12-04-2014 |
20140357015 | METHOD AND APPARATUS FOR MANUFACTURING LEAD WIRE FOR SOLAR CELL - A method of manufacturing a lead wire for a solar cell includes heating a wire material by a direct resistance heating or by an induction heating to reduce a 0.2% proof stress of the wire material while conveying the wire material and plating the wire material that is in a heated condition obtained by the direct resistance heating or by the induction heating while further conveying the wire material. An apparatus is configured to implement the method, and includes a plating bath, a conveyor mechanism configured to convey the wire material, a heater configured to heat the wire material, and a controller configured to control the conveyor mechanism and the heater. | 12-04-2014 |
20140370650 | MONOLITHICALLY ISLED BACK CONTACT BACK JUNCTION SOLAR CELLS USING BULK WAFERS - According to one aspect of the disclosed subject matter, a method for forming a monolithically isled back contact back junction solar cell using bulk wafers is provided. Emitter and base contact regions are formed on a backside of a semiconductor wafer having a light receiving frontside and a backside opposite said frontside. A first level contact metallization is formed on the wafer backside and an electrically insulating backplane is attached to the semiconductor wafer backside. Isolation trenches are formed in the semiconductor wafer patterning the semiconductor wafer into a plurality of electrically isolated isles and the semiconductor wafer is thinned. A metallization structure is formed on the electrically insulating backplane electrically connecting the plurality of isles. | 12-18-2014 |
20140370651 | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE - A semiconductor device includes a substrate made of a semiconductor material, an n-type semiconductor layer arranged on a portion of one principal surface of the substrate, and a p-type semiconductor layer arranged on a portion of the one principal surface of the substrate, the portion not provided with the n-type semiconductor layer. The n-type semiconductor layer includes a portion located right above the p-type semiconductor layer. | 12-18-2014 |
20150017758 | SYSTEMS, METHODS, AND MEDIA FOR LASER DEPOSITION - In accordance with some embodiments of the disclosed subject matter, mechanisms for pulsed laser deposition are provided. In some embodiments, a system for pulsed laser deposition is provided, the system comprising: a pulsed laser configured to project a pulsed laser beam at a rotating target material and cause metal clusters to be ablated from the rotating target material; and a confinement mechanism configured to control deposition of the metal clusters on a substrate. | 01-15-2015 |
20150044815 | METHOD OF MANUFACTURING METAL OXIDE CRYSTAL AND METHOD OF FABRICATING SUBSTRATE FOR SOLAR CELL - Provided are a method of manufacturing a metal oxide and a substrate for a solar cell. The method of manufacturing the metal oxide according to the inventive concept includes mixing a metal precursor material, a basic material, amphiphilic molecules and distilled water to prepare a metal precursor solution, performing a first heat treatment with the metal precursor solution to form a metal oxide, and performing a second heat treatment with the metal oxide to form a pair of metal oxide disks having a single crystalline structure. A pair of zinc oxide disks includes a first disk, and a second disk separated from the first disk in a perpendicular direction to the first disk. | 02-12-2015 |
20150050773 | METHOD FOR PRODUCING AN ELECTRICALLY CONDUCTIVE CONTACT ON A SOLAR CELL - A method is provided for producing an electrically conductive contact on a rear face and/or front face of a solar cell. The method interconnects solar cells in a cost-effective manner and ensures that cell damage, which leads to a reduction in power, is avoided. The rear face and/or front face of the solar cell is treated in the region of the contact and, after the treatment in the region, a pasty adhesive or an adhesive tape is applied in strips. | 02-19-2015 |
20150056745 | TITANIUM DIOXIDE NANO PARTICLE MODIFIED BY SURFACE STABILIZER, TITANIUM DIOXIDE NANO INK COMPRISING THE SAME, SOLAR CELL EMPLOYING THE SAME, AND PRODUCING METHOD OF THE SAME - Disclosed are a titanium dioxide nano ink having such a strong dispersibility as to be applicable by inkjet printing and having adequate viscosity without requiring printing several times, and a titanium dioxide nano particle modified by a surface stabilizer included therein. Inkjet printing of the titanium dioxide nano ink enables printing of a minute electrode. In addition, efficiency of a solar cell may be maximized since occurrence of pattern cracking is minimized. | 02-26-2015 |
20150072467 | SHALLOW JUNCTION PHOTOVOLTAIC DEVICES - A method for fabricating a photovoltaic device includes forming a first contact on a crystalline substrate, by epitaxially growing a first doped layer having a doping concentration of 10 | 03-12-2015 |
20150072468 | METHOD FOR FABRICATING SILICON-DOPED OR BORON-DOPED ALUMINUM ELECTRODE - A method for fabricating a silicon-doped or boron-doped aluminum electrode is revealed. Aluminum target or aluminum paste prepared by selectively doped with silicon and/or boron is arranged at a silicon wafer with a passivation layer by physical deposition or screen printing. Then the doped aluminum layer is melted in linear or dot pattern to pass through the passivation layer and contact with the silicon wafer. Thus contact resistance between an aluminum back electrode and the silicon wafer of crystalline silicon solar cells is reduced and acceptor concentration on a surface layer of the silicon wafer is increased. Therefore the process speed is faster and the energy conversion efficiency of the solar cell is improved. | 03-12-2015 |
20150072469 | SODIUM DOPED THIN FILM CIGS/CIGSS ABSORBER FOR HIGH EFFICIENCY PHOTOVOLTAIC DEVICES AND RELATED METHODS - A method of processing a thin-film absorber material with enhanced photovoltaic efficiency. The method includes providing a soda-lime glass substrate having a surface region and forming a barrier material overlying the surface region, followed by formation of a stack structure including a first thickness of a first precursor, a second thickness of a second precursor, and a third thickness of a third precursor. The first thickness of the first precursor is sputtered with a first target device including a first mixture of copper, gallium, and a first sodium species. The method further includes subjecting the soda-lime glass substrate having the stack structure in a thermal treatment process with at least H | 03-12-2015 |
20150093851 | ALIGNMENT FOR METALLIZATION - Forming a metal layer on a solar cell. Forming a metal layer can include placing a patterned metal foil on the solar cell, where the patterned metal foil includes a positive busbar, a negative busbar, a positive contact finger extending from the positive busbar, a negative contact finger extending from the negative busbar, a metal strip, and one or more tabs. The positive and negative busbars and the positive and negative contact fingers can be connected to one another by the metal strip and tabs. Forming the metal layer can further include coupling the patterned metal foil to the solar cell and removing the metal strip and tabs. Removing the metal strip and tabs can separate the positive and negative busbars and contact fingers. | 04-02-2015 |
20150093852 | METHOD FOR ENHANCING CONDUCTIVITY OF MOLYBDENUM THIN FILM BY USING ELECTRON BEAM IRRADIATION - Disclosed is a method for manufacturing a solar cell, which is capable of enhancing the conductivity of a molybdenum thin film by decreasing the specific resistivity and thickness of the molybdenum thin film that is a back electrode. The method for manufacturing the solar cell according to the present invention includes: a step of forming a molybdenum thin film on a substrate; and a step of performing a post-processing process on the molybdenum thin film to form a back electrode. Here, the post-processing process with respect to the molybdenum thin film may be performed by irradiating an electron beam. | 04-02-2015 |
20150099326 | SOLAR CELL AND MANUFACTURING METHOD OF THE SAME - A method for manufacturing a solar cell, comprising the steps of: a) providing a semiconductor substrate having a light-receiving side and a back side, wherein a passivation layer is formed on the back side; b) forming a silver conductor pattern comprising a metal resinate on the back side of the semiconductor substrate; c) forming an aluminum conductor pattern on the back side of the semiconductor substrate, at least part of the aluminum conductor pattern being superimposed on at least part of the silver conductor pattern; and d) firing the silver conductor pattern and the aluminum conductor pattern at the same time, thereby forming an electric contact between the semiconductor substrate and the aluminum conductor pattern by way of fire through in a region where the silver conductor pattern and the aluminum conductor pattern are superimposed. | 04-09-2015 |
20150104900 | METHOD FOR FORMING STRUCTURES IN A SOLAR CELL - A conductive contact pattern is formed on a surface of solar cell by forming a thin conductive layer over at least one lower layer of the solar cell, and ablating a majority of the thin conductive layer using a laser beam, thereby leaving behind the conductive contact pattern. The laser has a top-hat profile, enabling precision while scanning and ablating the thin layer across the surface. Heterocontact patterns are also similarly formed. | 04-16-2015 |
20150111336 | PHOTOVOLTAIC DEVICE AND METHOD OF MANUFACTURE - A counter electrode generally shown as 1 is formed of a conductive substrate e.g. a glass substrate 10 on which is deposited doped oxide, e.g. a fluorine doped tin oxide 20. Overlaying the fluorine layer is a layer of a metal halide, e.g. platinum chloride 30 (5 Mm H | 04-23-2015 |
20150125990 | TRUNCATED PYRAMID STRUCTURES FOR SEE-THROUGH SOLAR CELLS - The present disclosure presents a partially-transparent (see-through) three-dimensional thin film solar cell (3-D TFSC) substrate. The substrate includes a plurality of unit cells. Each unit cell structure has the shape of a truncated pyramid, and its parameters may be varied to allow a desired portion of sunlight to pass through. | 05-07-2015 |
20150140725 | METHOD FOR MANUFACTURING AN INTERDIGITATED BACK CONTACT SOLAR CELL - A method for manufacturing an interdigitated back contact solar cell, comprising steps of: (a) providing a doped silicon substrate; (b) forming a first silicon dioxide layer on the front surface and the rear surface; (c) depositing a boron-containing doping paste on the first silicon dioxide layer of the rear surface in a first pattern; (d) heating the silicon substrate; (e) removing the first silicon dioxide layer; (f) forming a second silicon dioxide layer on the front surface and the rear surface; (g) depositing a phosphorus-containing doping paste on the second dioxide layer of the rear surface in a second pattern; (h) heating the silicon substrate; and (i) removing the second silicon dioxide layer from the silicon substrate, wherein the first pattern and the second pattern collectively form an interdigitated pattern. | 05-21-2015 |
20150140726 | METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE - A transparent conductive substrate ( | 05-21-2015 |
20150140727 | METHOD FOR FORMING CONDUCTIVE ELECTRODE PATTERNS AND METHOD FOR MANUFACTURING SOLAR CELLS COMPRISING THE SAME - A method for forming conductive electrode patterns of a solar cell is provided. The method includes preparing a glass substrate and forming a transparent conductive oxide film (TCO) on the glass substrate. Then, a titanium oxide (TiO | 05-21-2015 |
20150295122 | METHODS OF FORMING SOLAR CELLS - Methods of fabricating conductive patterns over a solar cell structure are provided, in which a patterned resist layer is provided over an anti-reflective coating layer formed over a solar cell structure. The patterned resist layer is used to etch the exposed portion of the anti-reflective coating, and a metal seed layer is provided over the resist layer and the exposed portion of the solar cell structure's surface. The metal seed layer is selectively removed from over the patterned resist layer without removal from the exposed portion of the surface of the solar cell structure. Different thermal conductivities of the patterned resist layer and the solar cell structure's surface facilitate the selective removal of the seed layer from over the resist layer. Also provided are methods of facilitating simultaneous fabrication of conductive patterns over a plurality of solar cell structures using one or more frame structures. | 10-15-2015 |
20150303323 | Metallization Paste for Solar Cells - A metallization paste or ink for making electrical contacts on solar cells has reduced diffusion in a silicon wafer. The paste or ink is configured for printing on a crystalline silicon substrate of a solar cell, wherein the paste comprises silicon particles, aluminum particles, and a paste vehicle. Alternatively, the paste comprises aluminum-silicon alloy particles. | 10-22-2015 |
20150303348 | SELECTIVE EMITTER SOLAR CELL - A manufacturing method of selective emitter solar cell can include, forming an emitter layer positioned on a light receiving surface of the substrate having a first conductive type, the emitter layer having a second conductive type opposite to the first conductive type, forming a first emitter portion having a first impurity concentration and a second emitter portion having a second impurity concentration higher than the first impurity concentration on the emitter layer using a etch stop mask or a mask pattern, and forming a plurality of first electrodes connected to the second emitter portion, wherein the second emitter portion includes a first region that contacts the first electrodes and overlaps the first electrodes and a second region that is positioned around the first region and does not overlap the first electrodes, and the line width of the second region is more than the line width of each first electrode and less than four times the line width of each first electrode. | 10-22-2015 |
20150311355 | THERMALLY-INSULATED MICRO-FABRICATED ATOMIC CLOCK STRUCTURE AND METHOD OF FORMING THE ATOMIC CLOCK STRUCTURE - A micro-fabricated atomic clock structure is thermally insulated so that the atomic clock structure can operate with very little power in an environment where the external temperature can drop to −40° C., while at the same time maintaining the temperature required for the proper operation of the VCSEL and the gas within the vapor cell. | 10-29-2015 |
20150311357 | SOLAR CELL CONTACT FORMATION USING LASER ABLATION - The formation of solar cell contacts using a laser is described. A method of fabricating a back-contact solar cell includes forming a poly-crystalline material layer above a single-crystalline substrate. The method also includes forming a dielectric material stack above the poly-crystalline material layer. The method also includes forming, by laser ablation, a plurality of contacts holes in the dielectric material stack, each of the contact holes exposing a portion of the poly-crystalline material layer; and forming conductive contacts in the plurality of contact holes. | 10-29-2015 |
20150333198 | COMPOSITION FOR FORMING SOLAR CELL ELECTRODE AND ELECTRODE PREPARED USING THE SAME - Example embodiments relate to a composition for forming a solar cell electrode, and a solar cell electrode prepared using the composition. The composition for forming a solar cell electrode includes a silver (Ag) powder, a glass frit, and an organic vehicle, wherein the glass frit includes silver (Ag); tellurium (Te); and at least one selected from the group of lithium (Li), sodium (Na), and potassium (K), a molar ratio of the silver (Ag): the tellurium (Te) included in the glass frit is in a range of about 1:0.1 to about 1:50, and a molar ratio of the silver (Ag) : lithium (Li), sodium (Na) or potassium (K) is in a range of about 1:0.01 to about 1:10. The solar cell electrode prepared using the composition has excellent fill factor and conversion efficiency due to minimized contact resistance (Rc) and series resistance (Rs). | 11-19-2015 |
20150357510 | METHOD FOR MANUFACTURING SOLAR CELL - A method of manufacturing a solar cell is discussed. The method of manufacturing the solar cell includes: forming a conductive region on a semiconductor substrate; forming an electrode connected to the conductive region; and post-processing the semiconductor substrate to passivate the semiconductor substrate. The post-processing of the semiconductor substrate comprises a main processing process for heat-treating the semiconductor substrate while providing light to the semiconductor substrate. A temperature of the main processing process is about 100° C. to about 800° C., and the temperature and light intensity of the main processing process satisfy Equation of 1750−31.8·T+(0.16)·T | 12-10-2015 |
20150364621 | COMPOSITION FOR FORMING ELECTRODE OF SOLAR CELL AND ELECTRODE MANUFACTURED BY USING SAME - The present invention relates to a composition for preparing solar cell electrodes including: a silver (Ag) powder; a glass frit containing about 0.1 mole % to about 50 mole % of elemental silver; and an organic vehicle, the composition introduces a glass frit including a silver cyanate or a silver nitrate to enhance contact efficiency between an electrode and a wafer, and solar cell electrodes prepared from the composition have minimized contact resistance (Rc) and serial resistance (Rs), thereby exhibiting excellent conversion efficiency. | 12-17-2015 |
20150364625 | METHODS FOR WET CHEMISTRY POLISHING FOR IMPROVED LOW VISCOSITY PRINTING IN SOLAR CELL FABRICATION - A method of fabricating a solar cell is disclosed. The method includes forming a polished surface on a silicon substrate and forming a first flowable matrix in an interdigitated pattern on the polished surface, where the polished surface allows the first flowable matrix to form an interdigitated pattern comprising features of uniform thickness and width. In an embodiment, the method includes forming the silicon substrate using a method such as, but not limited to, of diamond wire or slurry wafering processes. In another embodiment, the method includes forming the polished surface on the silicon substrate using a chemical etchant such as, but not limited to, sulfuric acid (H | 12-17-2015 |
20150380254 | METHOD FOR FORMING A METAL SILICIDE USING A SOLUTION CONTAINING GOLD IONS AND FLUORINE IONS - A subject matter of the invention is a process for the formation of nickel silicide or of cobalt silicide, comprising the stages consisting in:
| 12-31-2015 |
20160013335 | ACTIVE BACKPLANE FOR THIN SILICON SOLAR CELLS | 01-14-2016 |
20160027935 | METHOD FOR PRODUCING STACKED ELECTRODE AND METHOD FOR PRODUCING PHOTOELECTRIC CONVERSION DEVICE - A method for producing a stacked electrode of an embodiment includes preparing a multi-layered graphene film, applying a dispersion liquid of metal nanowires onto the multi-layered graphene film, and removing a solvent from the dispersion liquid to prepare a metal wiring on the multi-layered graphene film. | 01-28-2016 |
20160027953 | SINGLE-STEP METAL BOND AND CONTACT FORMATION FOR SOLAR CELLS - A method for fabricating a solar cell is disclosed. The method can include forming a dielectric region on a surface of a solar cell structure and forming a first metal layer on the dielectric region. The method can also include forming a second metal layer on the first metal layer and locally heating a particular region of the second metal layer, where heating includes forming a metal bond between the first and second metal layer and forming a contact between the first metal layer and the solar cell structure. The method can include forming an adhesive layer on the first metal layer and forming a second metal layer on the adhesive layer, where the adhesive layer mechanically couples the second metal layer to the first metal layer and allows for an electrical connection between the second metal layer to the first metal layer. | 01-28-2016 |
20160043243 | SOLAR CELL MANUFACTURING METHOD - In a method for manufacturing a solar cell, a first electrode is formed on one surface of a photoelectric conversion section by means of screen printing using a conductive paste, and a second electrode having an area larger than that of the first electrode is formed on the other surface of the photoelectric conversion section by means of screen printing using a conductive paste having viscosity lower than that of the conductive paste. | 02-11-2016 |
20160079466 | SOLAR CELL AND SOLAR-CELL MODULE - A solar cell wherein: an emitter layer is formed on a light-receiving-surface side of a crystalline silicon substrate, with a dopant of the opposite conductivity type from the silicon substrate added to said emitter layer; a passivation film is formed on the surface of the silicon substrate; and an extraction electrode and a collector electrode are formed. Said extraction electrode extracts photogenerated charge from the silicon substrate, and said collector electrode contacts the extraction electrode at least partially and collects the charge collected at the extraction electrode. The extraction electrode contains a first electrode that consists of a sintered conductive paste containing a dopant that makes silicon conductive. Said first electrode, at least, is formed so as to pass through the abovementioned passivation layer. The collection electrode contains a second electrode that has a higher conductivity than the aforementioned first electrode. This invention reduces contact-resistance losses between the silicon and the electrodes, resistance losses due to electrode resistance, and optical and electrical losses in the emitter layer, thereby greatly improving the characteristics of the solar cell. | 03-17-2016 |
20160087119 | PROTECTION LAYER FOR FOIL-BASED METALLIZATION OF SOLAR CELLS - Approaches for foil-based metallization of solar cells are described. For example, a method of fabricating a solar cell involves placing a metal foil over a metalized surface of a wafer of the solar cell. The method further involves placing a protection layer over the metal foil. The method further involves locating the metal foil with the metalized surface of the wafer. The protection layer preserves an optically consistent surface of the metal foil during the locating. The method also involves, subsequent to the locating, electrically contacting the metal foil to the metalized surface of the wafer. | 03-24-2016 |
20160133764 | METHOD OF MANUFACTURING ELECTRICAL DEVICE - A method of manufacturing an electrical device comprising steps of: preparing a substrate; applying a conductive paste onto the substrate, wherein the conductive paste comprises (i) an inorganic powder comprising at least a conductive powder, (ii) an organic polymer, (iii) a solvent and (iv) a gellant selected from the group consisting of a polyalkyleneoxy terminated polyamide (PAOPA), an ester terminated polyamide (ETPA), polyether polyamine (PEPA) and a mixture thereof; and heating the applied conductive paste to form an electrode. | 05-12-2016 |
20160133780 | COMPOSITION FOR MANUFACTURING ELECTRODE OF SOLAR CELL, METHOD OF MANUFACTURING SAME ELECTRODE, AND SOLAR CELL USING ELECTRODE OBTAINED BY SAME METHOD - A composition for manufacturing an electrode of a solar cell, comprising metal nanoparticles dispersed in a dispersive medium, wherein the metal nanoparticles contain silver nanoparticles of 75 weight % or more, the metal nanoparticles are chemically modified by a protective agent having a main chain of organic molecule comprising a carbon backbone of carbon number of 1 to 3, and the metal nanoparticles contains 70% or more in number-average of metal nanoparticles having a primary grain size within a range of 10 to 50 nm. | 05-12-2016 |
20160141267 | SEMICONDUCTOR DEVICE, METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE, AND ELECTRONIC APPARATUS - There is provided a semiconductor device, including a semiconductor substrate, an interlayer insulating layer formed on the semiconductor substrate, a bonding electrode formed on a surface of the interlayer insulating layer, and a metal film which covers an entire surface of a bonding surface including the interlayer insulating layer and the bonding electrode. | 05-19-2016 |
20160141445 | METHOD AND DEVICE FOR PRODUCING A PHOTOVOLTAIC ELEMENT WITH STABILISED EFFICIENCY - According to an example, in a method for producing a photovoltaic element with stabilised efficiency, a silicon substrate may be provided with an emitter layer and electrical contacts, which may be subjected to a stabilisation treatment step. Hydrogen from a hydrogenated silicon nitride layer may be introduced into the silicon substrate, for example, within a zone of maximum temperature. The silicon substrate may then be cooled rapidly in a zone in order to avoid hydrogen effusion. The silicon substrate may then be maintained, for example in a zone within a temperature range of from 230° C. to 450° C. for a period of, for example, at least 10 seconds. The previously introduced hydrogen may thereby assume an advantageous bond state. At the same time or subsequently, a regeneration may be carried out by generating excess minority charge carriers in the substrate at a temperature of at least 90° C., preferably at least 230° C. | 05-19-2016 |
20160149071 | METHOD FOR PRODUCING A MICROSYSTEM HAVING PIXELS - A Method for producing a microsystem ( | 05-26-2016 |
20160163469 | METHOD TO ENHANCE THE EFFICIENCY OF DYE SENSITIZED AND PEROVSKITE SOLAR CELL - The present disclosure relates to a method to enhance the efficiency and reduce interfacial charge transfer resistance in dye sensitized solar cell (DSSC) and a perovskite solar cell (PSC) by fabricating with Mg and La doped photoanodes. Mg and La co-doped into TiO | 06-09-2016 |
20160181467 | Methods For Forming A Transparent Oxide Layer For A Photovoltaic Device | 06-23-2016 |
20160190364 | SEED LAYER FOR SOLAR CELL CONDUCTIVE CONTACT - Seed layers for solar cell conductive contacts and methods of forming seed layers for solar cell conductive contacts are described. For example, a solar cell includes a substrate. An emitter region is disposed above the substrate. A conductive contact is disposed on the emitter region and includes a conductive layer in contact with the emitter region. The conductive layer is composed of aluminum/silicon (Al/Si) particles having a composition of greater than approximately 15% Si with the remainder Al. In another example, a solar cell includes a substrate having a diffusion region at or near a surface of the substrate. A conductive contact is disposed above the diffusion region and includes a conductive layer in contact with the substrate. The conductive layer is composed of aluminum/silicon (Al/Si) particles having a composition of greater than approximately 15% Si with the remainder Al. | 06-30-2016 |
20160197209 | SOLAR CELL AND METHOD FOR MANUFACTURING THE SAME | 07-07-2016 |
20160204287 | METHOD FOR FORMING A PHOTOVOLTAIC CELL | 07-14-2016 |
20160204295 | GRID FOR PLASMA ION IMPLANT | 07-14-2016 |
20160204303 | USING AN ACTIVE SOLDER TO COUPLE A METALLIC ARTICLE TO A PHOTOVOLTAIC CELL | 07-14-2016 |
20160380128 | Thermal Compression Bonding Approaches for Foil-Based Metallization of Solar Cells - Thermal compression bonding approaches for foil-based metallization of solar cells, and the resulting solar cells, are described. For example, a method of fabricating a solar cell includes placing a metal foil over a metalized surface of a wafer of the solar cell. The method also includes locating the metal foil with the metalized surface of the wafer. The method also includes, subsequent to the locating, applying a force to the metal foil such that a shear force appears between the metal foil and the metallized surface of the wafer to electrically connect a substantial portion of the metal foil with the metalized surface of the wafer. | 12-29-2016 |
20170236961 | FLAT TOP LASER BEAM PROCESSING FOR MAKING A SOLAR CELL SUBSTRATE | 08-17-2017 |
20170236969 | LASER IRRADIATION ALUMINUM DOPING FOR MONOCRYSTALLINE SILICON SUBSTRATES | 08-17-2017 |
20170236970 | METHOD FOR PRODUCING DOPING REGIONS IN A SEMICONDUCTOR LAYER OF A SEMICONDUCTOR COMPONENT | 08-17-2017 |
20190148442 | IMAGE SENSING DEVICE AND MANUFACTURING METHOD THEREOF | 05-16-2019 |