Entries |
Document | Title | Date |
20080200012 | Wafer processing method and laser processing apparatus - In a wafer processing method for penetrating a wafer by use of a laser processing apparatus including a chuck table for holding the wafer, laser beam irradiation means for irradiating the wafer held on the chuck table with a laser beam, and imaging means for imaging the wafer held on the chuck table, the chuck table includes a chuck table main body, a holding member disposed on an upper surface of the chuck table main body and having a holding surface for holding an entire surface of the wafer, the holding member comprising a transparent or translucent member, and a light emitting body disposed laterally of a side of the holding member opposite to the holding surface. The wafer processing method comprises irradiating a predetermined processing region of the wafer held on the chuck table with the laser beam to perform the penetration in a predetermined manner, then lighting the light emitting body, with the wafer being held on the chuck table, imaging the processing region by the imaging means, and determining acceptance or rejection of the penetration based on whether or not light has passed through the processing region. | 08-21-2008 |
20080220590 | Thin wafer dicing using UV laser - In a method and system for dicing a wafer ( | 09-11-2008 |
20080233715 | METHOD AND APPARATUS FOR THE LASER SCRIBING OF ULTRA LIGHTWEIGHT SEMICONDUCTOR DEVICES - A system for the laser scribing of semiconductor devices includes a laser light source operable to selectably deliver laser illumination at a first wavelength and at a second wavelength which is shorter than the first wavelength. The system further includes a support for a semiconductor device and an optical system which is operative to direct the laser illumination from the light source to the semiconductor device. The optical system includes optical elements which are compatible with the laser illumination of the first wavelength and the laser illumination of the second wavelength. In specific instances, the first wavelength is long wavelength illumination such as illumination of at least 1000 nanometers, and the second wavelength is short wavelength illumination which in specific instances is 300 nanometers or shorter. By the use of the differing wavelengths, specific layers of the semiconductor device may be scribed without damage to subjacent layers. Also disclosed are specific scribing processes. | 09-25-2008 |
20080242053 | INTEGRATED CIRCUIT SYSTEM WITH A DEBRIS TRAPPING SYSTEM - An integrated circuit system including: providing an integrated circuit wafer having an integrated circuit side and a backside; mounting a protective adhesive on the integrated circuit side of the integrated circuit wafer; removing material from the backside of the integrated circuit wafer; and dicing the integrated circuit wafer through the protective adhesive to form an integrated circuit die. | 10-02-2008 |
20080242054 | Dicing and drilling of wafers - Methods and apparatus to dicing and/or drilling of wafers are described. In one embodiment, an electromagnetic radiation beam (e.g., a relatively high intensity, ultra-short laser beam) may be used to dice and/or drill a wafer. Other embodiments are also described. | 10-02-2008 |
20080242055 | WAFER LASER PROCESSING METHOD AND LASER PROCESSING EQUIPMENT - A wafer laser processing method for forming a groove in a wafer having a plurality of areas which are sectioned by streets formed in a lattice pattern on the front surface of a substrate, a device being formed in each of the plurality of areas, and an insulating film being formed on the surfaces of the devices, by applying a pulse laser beam along the streets, the method comprising a heating step for applying a first pulse laser beam set to an output for preheating the insulating film so as to soften it to the insulating film and a processing step for applying a second pulse laser beam set to an output for processing the insulating film and the substrate to the spot position of the first pulse laser beam applied in the heating step, the heating step and the processing step being carried out along the streets alternately. | 10-02-2008 |
20080242056 | SYSTEM AND METHOD FOR CUTTING USING A VARIABLE ASTIGMATIC FOCAL BEAM SPOT - A variable astigmatic focal beam spot is formed using lasers with an anamorphic beam delivery system. The variable astigmatic focal beam spot can be used for cutting applications, for example, to scribe semiconductor wafers such as light emitting diode (LED) wafers. The exemplary anamorphic beam delivery system comprises a series of optical components, which deliberately introduce astigmatism to produce focal points separated into two principal meridians, i.e. vertical and horizontal. The astigmatic focal points result in an asymmetric, yet sharply focused, beam spot that consists of sharpened leading and trailing edges. Adjusting the astigmatic focal points changes the aspect ratio of the compressed focal beam spot, allowing adjustment of energy density at the target without affecting laser output power. Scribing wafers with properly optimized energy and power density increases scribing speeds while minimizing excessive heating and collateral material damage. | 10-02-2008 |
20080261382 | WAFER DICING USING A FIBER MOPA - Silicon wafer dicing apparatus includes a master oscillator power amplifier (MOPA) arrangement wherein the master oscillator includes a continuous wave (CW) laser the output of which modulated by an external modulator to provide optical pulses to be amplified in the power amplifier. In one example of the apparatus the power amplifier includes at least one amplification stage including an optical fiber gain-medium. | 10-23-2008 |
20080268619 | Wafer dividing method - A method of dividing a wafer having devices which are formed in a plurality of areas sectioned by a plurality of streets formed in a lattice pattern on the front surface of a substrate and a protective film which covers the front surfaces of the devices into individual devices along the streets, comprising the steps of: | 10-30-2008 |
20080286945 | Controlled process and resulting device - A technique for forming a film of material ( | 11-20-2008 |
20080293220 | Wafer dividing method - A method of dividing a wafer having a plurality of dividing lines which are formed in a lattice pattern on the front surface, into individual chips along the dividing lines, the method comprising a wafer affixing step for affixing the front surface of the wafer to the front surface of a holding plate having stiffness through an adherent layer; a grinding step for grinding the rear surface of the wafer affixed to the holding plate to a predetermined thickness; a deteriorated layer forming step for applying a pulse laser beam of a wavelength having permeability for the wafer from the rear surface of the wafer which is affixed to the holding plate and has undergone the grinding step to form a deteriorated layer in the inside of the wafer along the dividing lines; a wafer transfer step for putting the rear surface of the wafer which has undergone the deteriorated layer forming step on an adherent tape mounted on an annular frame and removing the holding plate from the front surface of the wafer; and a wafer dividing step for exerting external force to the wafer put on the adherent tape to divide the wafer along the dividing lines. | 11-27-2008 |
20080299745 | WAFER SEPARATING METHOD - A wafer separating method including a laminated member removing step for partially removing a laminated member of a wafer along streets by applying a laser beam to the wafer along the streets, and a cutting step for cutting a substrate of the wafer along the streets after the laminated member removing step. The laminated member removing step includes a first laser processing step for applying a first laser beam along two parallel lines spaced apart from each other in each street, the first laser beam being capable of passing through the laminated member and having an absorption wavelength to the substrate, thereby heating the substrate to generate two cracks in the laminated member by thermal shock so that the two cracks extend along the two parallel lines in each street; and a second laser processing step for applying a second laser beam to a region between the two cracks in the laminated member, the second laser beam having an energy density higher than that of the first laser beam, thereby removing the region between the two cracks in the laminated member to expose the substrate along each street. | 12-04-2008 |
20080305615 | Method of Scribing and Breaking Substrate Made of a Brittle Material and System for Scribing and Breaking Substrate - An object of the present invention is to provide a method of scribing and breaking a substrate made of a brittle material by which good-quality cutting surface of the substrate can be obtained without any defects such as chippings on the substrate. | 12-11-2008 |
20080305616 | Die Singulation Methods - Some embodiments include methods in which a front side region of a semiconductor substrate is placed against a surface. While the front side region is against the surface, the semiconductor substrate is thinned, and then cut into a plurality of dice. The surface may be a pliable material, and may be stretched after the cutting to increase separation between at least some of the dice. While the pliable surface is stretched, at least some of the dice may be picked from the surface. In some embodiments, the semiconductor substrate is retained to the surface with a radiation-curable material. The material is in an uncured and tacky form during the thinning of the substrate, and is subsequently cured into a less tacky form prior to the picking of dice from the surface. | 12-11-2008 |
20090004828 | LASER BEAM MACHINING METHOD FOR WAFER - A laser beam machining method for a wafer, wherein an operation of irradiating the inside of a wafer with a laser beam L along each of planned dividing lines is repeated a plural number of times from a position proximate to a back-side surface of the wafer toward a face-side surface of the wafer so that a plurality of composite layers each including a denatured layer and a cracked layer extending from the denatured layer toward the face-side surface are formed stepwise at intervals (first laser beam irradiation step). Subsequently, each of some of non-cracked layers between the composite layers is irradiated with the laser beam L so as to extend the cracked layer of a given one of the composite layers and to cause the cracked layer to reach the denatured layer of the composite layer which is adjacent to the given one composite layer. The denatured layers and the cracked layers which are sufficient for enabling the wafer to be split are formed by a reduced number of laser beam irradiation operations. | 01-01-2009 |
20090011571 | WAFER WORKING METHOD - A wafer working method is provided which is capable of feeding a wafer diced by a laser dicing apparatus to a subsequent step without breaking up the wafer. The wafer working method comprises: a first machining step of grinding a reverse side of a wafer W and then polishing the reverse side of the wafer thus ground to a thickness T2 which is larger than a finally worked wafer thickness T1 by 50 μm to 150 μm; a modified region forming step of irradiating laser light to the wafer thus subjected to the first machining to form a modified region inside the wafer; and a second machining step of grinding the reverse side of the wafer thus formed with the modified region and then polishing the reverse side of the wafer thus ground to the finally worked wafer thickness T1. | 01-08-2009 |
20090011572 | Wafer Working Method - A wafer working method is provided which is capable of feeding a wafer diced by a laser dicing apparatus to a subsequent step without breaking up the wafer. The wafer working method comprises: a first machining step of grinding a reverse side of a wafer W and then polishing the reverse side of the wafer thus ground to a thickness T | 01-08-2009 |
20090042369 | METHOD AND STRUCTURE USING SELECTED IMPLANT ANGLES USING A LINEAR ACCELERATOR PROCESS FOR MANUFACTURE OF FREE STANDING FILMS OF MATERIALS - A method for fabricating free standing thickness of materials using one or more semiconductor substrates, e.g., single crystal silicon, polysilicon, silicon germanium, germanium, group III/IV materials, and others. In a specific embodiment, the present method includes providing a semiconductor substrate having a surface region and a thickness. The method includes subjecting the surface region of the semiconductor substrate to a first plurality of high energy particles provided at a first implant angle generated using a linear accelerator to form a region of a plurality of gettering sites within a cleave region, the cleave region being provided beneath the surface region to defined a thickness of material to be detached, the semiconductor substrate being maintained at a first temperature. In a specific embodiment, the method includes subjecting the surface region of the semiconductor substrate to a second plurality of high energy particles at a second implant angle generated using the linear accelerator, the second plurality of high energy particles being provided to increase a stress level of the cleave region from a first stress level to a second stress level. In a preferred embodiment, the semiconductor substrate is maintained at a second temperature, which is higher than the first temperature. The method frees the thickness of detachable material using a cleaving process, e.g., controlled cleaving process. | 02-12-2009 |
20090042370 | METHOD OF CUTTING PCBS - The present invention relates to a method of cutting PCB module using a laser. The method includes steps of: providing a coverlay film, the coverlay film including at least one opening defined therein; attaching the coverlay film onto the PCB module such that the through holes of the PCB module are covered by the coverlay film and the laser cutting area thereof is exposed via the at least one opening; applying a laser beam to the exposed laser cutting area of the PCB module to cutt the PCB module; and removing the coverlay film. A high positioning precision of the PCB module and better cutting result can be obtained. | 02-12-2009 |
20090053877 | METHOD FOR PRODUCING A MULTILAYER STRUCTURE COMPRISING A SEPARATING LAYER - Process for producing a multilayer structure that includes, within the depth thereof, a separating layer, including: producing an initial multilayer structure comprising a base substrate, a surface substrate and, between the base substrate and the surface substrate, an absorbent layer that can absorb a light power flux in at least one zone and a liquefiable intermediate layer that includes, in at least one zone, impurities having a coefficient of segregation relative to the material constituting this intermediate layer of less than unity; and in subjecting, for a defined time and in the form of at least one pulse, said initial structure to said light power flux, this flux being regulated so as to liquefy at least one portion of said intermediate layer under the effect of the propagation of the thermal energy, in such a way that it results, thanks to the initial presence of said impurities, in a modification of at least one characteristic and/or of at least one property of said intermediate layer arising from the at least partial solidification of said intermediate layer, such that this intermediate layer at least partially constitutes a separating layer. | 02-26-2009 |
20090081851 | Laser processing method - A laser processing method is provided, which, when cutting an object to be processed comprising a substrate and a multilayer part, formed on a front face of the substrate, including a functional device, can cut the multilayer part with a high precision in particular. | 03-26-2009 |
20090098713 | OBJECT CUTTING METHOD - An object cutting method which can reliably remove particles remaining on cut sections of chips is provided. An expandable tape | 04-16-2009 |
20090117711 | Method for Laterally Cutting Through a Semiconductor Wafer and Optoelectronic Component - In a method for laterally dividing a semiconductor wafer ( | 05-07-2009 |
20090117712 | LASER PROCESSING METHOD - A laser processing method for preventing particles from occurring from cut sections of chips obtained by cutting a silicon wafer is provided. An irradiation condition of laser light L for forming modified regions | 05-07-2009 |
20090124063 | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE - A method of manufacturing a semiconductor device by which a wafer with devices formed in a plurality of regions demarcated by a plurality of streets formed in a grid pattern in the face-side surface of the wafer is divided along the streets into individual devices, and an adhesive film for die bonding is attached to the back-side surface of each of the devices. The adhesive film is attached to the back-side surface of the wafer divided into individual devices by exposing cut grooves formed along the streets by a dicing-before-grinding method, and thereafter the adhesive film is irradiated with a laser beam along the cut grooves through the cut grooves from the side of a protective tape adhered to the face-side surface of the wafer, so as to fusion-cut the adhesive film along the cut grooves. | 05-14-2009 |
20090142906 | METHOD OF DIVIDING WAFER - A method of dividing a wafer includes: a denatured layer forming step of forming a denatured layer in the inside of the wafer along streets; a first feeding step in which the whole area of the wafer's back-side surface is suction held, and the wafer is mounted on a support base of a tape adhering unit, with the wafer's back-side surface on the upper side; a dicing tape adhering step of adhering a dicing tape to the wafer's back-side surface and an annular frame; a wafer reversing step of reversing the wafer and the annular frame face side back; a second feeding step of feeding said wafer and said annular frame to a tape expanding unit whole holding them by suction; a protective tape peeling step of peeling off a protective tape adhered to the wafer's face-side surface; and a wafer dividing step of expanding the dicing tape so as to divide the wafer along the streets along which the denatured layer has been formed. | 06-04-2009 |
20090149002 | METHOD OF FORMING A MODIFIED LAYER IN A SUBSTRATE - First, mapping data storing interrupted areas is obtained. In a first modified-layer forming step, before a stacked article is stacked on a front surface of a substrate, a laser beam is directed to the interrupted areas based on the mapping data to form modified layers only at the interrupted areas. After the stacked articles have been stacked on the substrate, in a second modified-layer forming step, the laser beam is directed at least to the predetermined dividing line formed with no modified layer in the first modified-layer forming step to form a modified layer. | 06-11-2009 |
20090155983 | INHIBITION OF METAL DIFFUSION ARISING FROM LASER DICING - Method of inhibiting metal diffusion arising from laser dicing is provided. The method includes dividing a wafer into at least one chip. The chip includes internal metallic features. The dividing deposits at least one metallic substance on the outer surface of the chip. After so dividing the chip, the method exposes the chip to a heated ambient environment having a given pressure (e.g., less than one atmosphere). The environment includes a chemical agent capable of bonding with the metallic substance. Additionally, wet chemical etch may be performed on the chip. | 06-18-2009 |
20090155984 | Backside protection film, method of forming the same and method of manufacturing a semiconductor package using the same - A method of forming a backside protection film includes forming a first coating layer on a first heterogeneous film, the first coating layer being at a C-stage state, forming a second coating layer on a second heterogeneous film, the second coating layer being at a B-stage state, separating the first coating layer from the first heterogeneous film, and attaching the first coating layer to the second coating layer, the second coating layer being between the second heterogeneous film and the first coating layer, and each of the first and second heterogeneous films being formed by coating a first material layer with a second material. | 06-18-2009 |
20090162994 | LASER PROCESSING METHOD - A laser processing method which can securely prevent particles from attaching to chips obtained by cutting a planar object is provided. When applying a stress to an object to be processed | 06-25-2009 |
20090170289 | WAFER DIVIDING METHOD - A laser beam is applied to an intersection area of each second street of a wafer by using a dicing apparatus to thereby form a first modified layer along the intersection area. Thereafter, the wafer is divided along each first street intersecting each second street at right angles to obtain a plurality of wafer strips. Thereafter, the laser beam is applied along the remaining area of each second street other than the intersection area to form a second modified layer along the remaining area of each second street. Thereafter, an external force is applied to each wafer strip in which the first and second modified layers have been formed along each second street, thereby dividing each wafer strip along each second street to obtain a plurality of devices. | 07-02-2009 |
20090191692 | Wafer processing method - A method of processing a wafer having a plurality of devices which are composed of a laminate consisting of an insulating film and a functional film on the front surface of a substrate, along streets for sectioning the plurality of devices, the method comprising a first blocking groove forming step for forming a first blocking groove for dividing the laminate in a one-side portion in the width direction of a street of the wafer held on a chuck table by moving the chuck table in a first direction in the processing-feed direction while activating a first laser beam application means; and a second blocking groove and dividing groove forming step for forming a second blocking groove which divides the laminate in the other-side portion in the width direction of the street of the wafer which has undergone the first blocking groove forming step by moving the chuck table in a second direction in the processing-feed direction while activating the first laser beam application means and at the same time, forming a dividing groove in the laminate and the substrate along an intermediate portion between the first blocking groove and the second blocking groove formed in the street of the wafer by activating second laser beam application means. | 07-30-2009 |
20090191693 | Wafer processing method - A method of processing a wafer having a plurality of devices which are composed of a laminate consisting of an insulating film and a functional film laminated on the front surface of a substrate, along streets for sectioning the plurality of devices, comprising a first trip blocking groove forming step for activating a first laser beam application means to form a blocking groove for dividing the laminate along a street of the wafer while moving the chuck table in a first direction in the processing-feed direction; a second trip blocking groove and dividing groove forming step for activating the first laser beam application means to form a blocking groove for dividing the laminate along a street next to the street which has undergone the first trip blocking groove forming step and also to form a dividing groove along the blocking groove formed by the first trip blocking groove forming step while moving the chuck table in a second direction in the processing-feed direction; and a first trip blocking groove and dividing groove forming step for activating the first laser beam application means to form a blocking groove for dividing the laminate along a street next to the street which has undergone the second trip blocking groove and dividing groove forming step and also, to form a dividing groove along the blocking groove formed by the second trip blocking groove and dividing groove forming step while moving the chuck table in a first direction in the processing-feed direction. | 07-30-2009 |
20090197395 | METHOD OF MANUFACTURING DEVICE - A method of manufacturing a device includes: a laser beam-machined groove forming step of irradiating a wafer with a laser beam from the back side of the wafer along planned dividing lines so as to form laser beam-machined grooves along the planned dividing lines; an etching step of etching a back-side surface of the wafer having been subjected to the laser beam-machined groove forming step, so as to remove denatured layers formed at processed surfaces of the laser beam-machined grooves; an adhesive film attaching step of attaching an adhesive film to the back-side surface of the wafer having been subjected to the etching step, and adhering the adhesive film side of the wafer to a surface of a dicing tape; and an adhesive film rupturing step of expanding the dicing tape so as to rupture the adhesive film along individual devices. | 08-06-2009 |
20090203193 | LASER PROCESSING METHOD - A laser processing method including a first step of forming a first groove and a second step of forming a second groove on the workpiece. In the first step, the laser beam is intermittently applied to the first street except the intersections between the first street and the second street, thereby forming a discontinuous groove as the first groove in such a manner that each intersection is not grooved. In the second step, the laser beam is continuously applied to the second street, thereby forming a continuous groove as the second groove intersecting the first groove in such a manner that each intersection is grooved by the second groove. In the second step, heat generated at a portion immediately before each intersection is passed through the intersection to be dissipated forward, thereby suppressing overheating at this portion. | 08-13-2009 |
20090215245 | Wafer dividing method - A method of dividing a wafer having a plurality of streets, which are formed in a lattice pattern on the front surface, and having devices, which are formed in a plurality of areas sectioned by the plurality of streets, into individual devices along the streets, comprising: a protective member-affixing step for affixing a protective member for protecting devices onto the front surface of the wafer; a deteriorated layer-forming step for applying a laser beam of a wavelength having permeability for the wafer from the rear surface side of the wafer along the streets to form a deteriorated layer along the streets in an area where it does not reach the final thickness of each device from the front surface of the wafer and the rear surface of the wafer in the inside of the wafer; a groove-forming step for cutting areas corresponding to the streets from the rear surface side of the wafer where the deteriorated layer has been formed along the streets to form a groove reaching the deteriorated layer; a dividing the wafer into individual devices along the streets where the deteriorated layer and the groove have been formed by exerting external force to the wafer; and a grinding the rear surface of the wafer which has been divided into individual devices until the final thickness of each device is achieved. | 08-27-2009 |
20090215246 | METHOD FOR BREAKING ADHESIVE FILM MOUNTED ON BACK OF WAFER - A method for breaking an adhesive film mounted on the back of a wafer having a plurality of streets formed in a lattice pattern on the face of the wafer, and having devices formed in a plurality of regions demarcated by the plurality of streets, the devices being divided individually, is adapted to break the adhesive film along the outer peripheral edges of the individual devices, with the adhesive film being stuck to the surface of a dicing tape mounted on an annular frame. The method comprises: a laser processing step of projecting a laser beam with a pulse width of 100 picoseconds or less onto the adhesive film through gaps between the individually divided devices to form deteriorated layers in the adhesive film along the outer peripheral edges of the individual devices; and an adhesive film breaking step of exerting external force on the adhesive film having the deteriorated layers formed therein, to break the adhesive film along the deteriorated layers. | 08-27-2009 |
20090291544 | WAFER LASER PROCESSING METHOD AND APPARATUS - A wafer laser processing method for forming deteriorated layers along a plurality of streets in the inside of a wafer having a device area where a plurality of areas are sectioned by the plurality of streets arranged in a lattice pattern on the front surface and devices are formed in the sectioned areas and having a peripheral excess area surrounding the device area, the surface of the device area being formed to be higher than the surface of the peripheral excess area, by applying a laser beam to the front surface of the wafer along the streets with its focal point set to the inside of the wafer, comprising a first deteriorated layer forming step for forming a deteriorated layer along the streets in the insides of the peripheral excess area and the device area by applying a laser beam to the peripheral excess area and the device area along the streets with its focal point set to the insides of the peripheral excess area and the device area from the front surface side of the wafer; and a second deteriorated layer forming step for forming a deteriorated layer along the streets in the inside of the device area by applying a laser beam to the device area along the streets with its focal point set to the inside of the device area without applying the laser beam to the peripheral excess area when the focal point of the laser beam is positioned near the front surface of the peripheral excess area. | 11-26-2009 |
20090298263 | DIVIDING METHOD FOR WAFER HAVING FILM ON THE FRONT SIDE THEREOF - A wafer dividing method for dividing a wafer having a film on the front side thereof. The wafer dividing method includes a modified layer forming step of applying a laser beam having a transmission wavelength to the substrate of the wafer from the front side thereof along the streets so that a focal point of the laser beam is set inside the substrate, thereby forming a modified layer in the substrate along each street, a film dividing step of applying a laser beam having an absorption wavelength to the film from the front side of the wafer along each street to thereby form a laser processed groove for dividing the film along each street, a back grinding step of grinding the back side of the substrate of the wafer to thereby reduce the thickness of the wafer to a predetermined thickness, a wafer supporting step of attaching the wafer to a dicing tape supported to an annular frame, and a wafer breaking step of applying an external force to the wafer by expanding the dicing tape to thereby break the wafer along each street. | 12-03-2009 |
20090311848 | OPTICAL DEVICE WAFER DIVIDING METHOD - An optical device wafer dividing method includes a rear surface grinding step for grinding a rear surface of the optical device wafer; a dicing tape sticking step for sticking the front surface of the optical device wafer bonded with the reinforcing substrate to the front surface of a dicing tape; a laser processing step for emitting a laser beam along the streets formed on the optical device wafer from the rear surface of the reinforcing substrate to perform laser processing on the reinforcing substrate along the streets to form fracture starting points; and a wafer dividing step for applying an external force along the fracture starting points of the reinforcing substrate to fracture the reinforcing substrate along the fracture starting points to fracture the optical device wafer along the streets. | 12-17-2009 |
20100015782 | Wafer Dicing Methods - Semiconductor wafer dicing methods are disclosed. These methods include forming etch patterns between adjacent semiconductor dice to be separated. Various etch processes can be used to form the etch patterns. The etch patterns generally reach a pre-determined depth into the wafer substrate significantly beyond the wafer top layer where pre-fabricated semiconductor dice are embedded. Semiconductor dice may be separated from a post-etch, large-sized, frangible wafer through wafer grinding, mechanical cleaving, and laser dicing approaches. Preferred embodiments result in reduced wafer-dicing related device damage and improved product yield. | 01-21-2010 |
20100015783 | METHOD OF CUTTING AN OBJECT TO BE PROCESSED - A method of cutting an object which can accurately cut the object is provided. An object to be processed | 01-21-2010 |
20100022071 | METHOD OF MANUFACTURING SEMICONDUCTOR CHIP - An object is to provide a semiconductor chip manufacturing method capable of removing test patterns in a higher efficiency in simple steps, while a general-purpose characteristic can be secured. | 01-28-2010 |
20100035408 | METHOD OF PROCESSING OPTICAL DEVICE WAFER - A method of dividing an optical device wafer includes: a laser beam processing step of performing laser beam processing to provide an optical device wafer with breakage starting points along streets on the face side of the optical device wafer; a protective plate bonding step of bonding the face side of the optical device wafer to a surface of a highly rigid protective plate with a bonding agent permitting peeling; a back side grinding step of grinding the back side of the optical device wafer so as to form the optical device wafer to a finished thickness of the optical devices; a wafer supporting step of adhering the back-side surface of the optical device wafer to a surface of a dicing tape, and peeling the protective plate adhered to the face side of the optical device wafer; and a wafer dividing step of exerting an external force on the optical device wafer so as to break up the optical device wafer along the streets along which the breakage starting points have been formed, thereby dividing the optical device wafer into the individual optical devices. | 02-11-2010 |
20100041210 | METHOD OF PROCESSING OPTICAL DEVICE WAFER - A method of dividing an optical device wafer includes: a laser beam processing step of performing laser beam processing on the face side of an optical device wafer so as to form breakage starting points along streets; a protective plate bonding step of bonding the face side of the optical device wafer to a surface of a highly rigid protective plate with a bonding agent permitting peeling; a back side grinding step of grinding the back side of the optical device wafer so as to form the optical device wafer to a finished thickness of optical devices; a dicing tape adhering step of adhering the back-side surface of the optical device wafer to a dicing tape; a cut groove forming step of cutting the protective plate bonded to the optical device wafer along the streets so as to form cut grooves; and a wafer dividing step of exerting an external force on the optical device wafer through the protective plate, so as to break up the optical device wafer along the breakage starting points formed along the streets, thereby dividing the optical device wafer into the individual optical devices. | 02-18-2010 |
20100047999 | WORKING METHOD FOR AN OPTICAL DEVICE WAFER - A dividing method for an optical device wafer includes a protective plate adhering step of releasably adhering the surface of an optical device wafer to the surface of a protective plate, a reverse face grinding step of grinding the reverse face of the optical device wafer, a dicing tape sticking step of sticking the reverse face of the optical device wafer on the surface of a dicing tape, a protective plate grinding step of grinding the reverse face of the protective plate adhered to the optical device wafer stuck on the dicing tape so as to have a predetermined thickness, a laser working step of irradiating a laser beam upon the protective plate along the streets formed on the optical device wafer to carry out laser working, which forms break starting points along the streets, for the protective plate, and a wafer dividing step of applying external force to the protective plate to break the protective plate along the break starting points to break the optical device wafer along the streets thereby to divide the optical device wafer into the individual optical devices. | 02-25-2010 |
20100048000 | METHOD OF MANUFACTURING SEMICONDUCTOR CHIPS - A semiconductor wafer is prepared. The wafer has a first and a second surface opposite to each other, and has a recess portion and a rim portion. The semiconductor wafer has semiconductor elements formed on the first surface. The rim portion surrounds the recess portion. The recess portion and the rim portion are composed of the first and second surfaces. The recess portion is formed so as to recede toward the first surface. A tape is adhered to the second surface of the semiconductor wafer. At least the recess portion of the semiconductor wafer is placed on a stage. The tape is sandwiched between the recess portion and the stage. Laser beam is irradiated to the recess portion from the side of the first surface and along predetermined dicing lines. The recess portion is cut off to divide the semiconductor wafer into chips. | 02-25-2010 |
20100055875 | METHOD FOR MANUFACTURING SEMICONDUCTOR CHIP AND METHOD FOR PROCESSING SEMICONDUCTOR WAFER - In a laser processing step S | 03-04-2010 |
20100055876 | Laser processing method and laser processing apparatus - A laser beam machining method and a laser beam machining device capable of cutting a work without producing a fusing and a cracking out of a predetermined cutting line on the surface of the work, wherein a pulse laser beam is radiated on the predetermined cut line on the surface of the work under the conditions causing a multiple photon absorption and with a condensed point aligned to the inside of the work, and a modified area is formed inside the work along the predetermined determined cut line by moving the condensed point along the predetermined cut line, whereby the work can be cut with a rather small force by cracking the work along the predetermined cut line starting from the modified area and, because the pulse laser beam radiated is not almost absorbed onto the surface of the work, the surface is not fused even if the modified area is formed. | 03-04-2010 |
20100099238 | Laser-assisted chemical singulation of a wafer - The present invention discloses an apparatus including: a laser beam directed at a wafer held by a chuck mounted on a stage inside a process chamber; a focusing mechanism for the laser beam; a steering mechanism for the laser beam; an optical scanning mechanism for the laser beam; a mechanical scanning system for the stage; an etch chemical induced by the laser beam to etch the wafer and form volatile byproducts; a gas feed line to dispense the etch chemical towards the wafer; and a gas exhaust line to remove any excess of the etch chemical and the volatile byproducts. | 04-22-2010 |
20100099239 | LASER MACHINING - A method of laser machining a feature in a substrate includes machining the substrate with a pulsed laser along a scan line so that the successive pulses | 04-22-2010 |
20100120228 | SEMICONDUTOR MANUFACTURING METHOD - A manufacturing method for semiconductor devices having a metal support is provided. The method in one aspect includes growing a semiconductor film on a growth substrate; forming a metal support on a surface of said semiconductor film opposite to the growth substrate; thereafter removing said growth substrate from said semiconductor film; forming a street groove reaching said metal support in the said semiconductor film; radiating a first laser beam onto said metal support to form a first dividing groove having a substantially flat bottom in said metal support; and radiating a second laser beam onto said metal support to form a second dividing groove that penetrates though a portion of said metal support that remains where the first divining groove is formed. | 05-13-2010 |
20100129984 | WAFER SINGULATION IN HIGH VOLUME MANUFACTURING - The present invention discloses an apparatus including: a laser beam directed at a wafer held by a chuck in a process chamber; a focusing mechanism for the laser beam; a steering mechanism for the laser beam; an optical scanning mechanism for the laser beam; a mechanical scanning system for the chuck; an etch chemical induced by the laser beam to etch the wafer and form volatile byproducts; a gas feed line to dispense the etch chemical towards the wafer; and a gas exhaust line to remove any excess of the etch chemical and the volatile byproducts. | 05-27-2010 |
20100136766 | WORKING METHOD FOR CUTTING - An object to be processed is reliably cut along a line to cut. An object to be processed is irradiated with laser light while locating a converging point at the object, so as to form a modified region in the object along a line to cut. The object formed with the modified region is subjected to an etching process utilizing an etching liquid exhibiting a higher etching rate for the modified region than for an unmodified region, so as to etch the modified region. This can etch the object selectively and rapidly along the line to cut by utilizing a higher etching rate in the modified region. | 06-03-2010 |
20100159672 | METHOD AND DEVICE FOR CLEANING ELECTRONIC COMPONENTS PROCESSED WITH A LASER BEAM - The present invention relates to a method for processing with a laser beam and cleaning electronic components, wherein at least one new boundary surface is formed on an electronic component with the laser beam. The invention also relates to a device for processing and cleaning electronic components, comprising at least: a laser source for generating a laser beam, and at least one carrier for supporting an assembly of unseparated electronic components, wherein the carrier and the laser beam are displaceable relative to each other. | 06-24-2010 |
20100184271 | LASER PROCESSING METHOD AND CHIP - An object to be processed can be cut highly accurately along a line to cut. | 07-22-2010 |
20100197116 | LASER-BASED MATERIAL PROCESSING METHODS AND SYSTEMS - Various embodiments may be used for laser-based modification of target material of a workpiece while advantageously achieving improvements in processing throughput and/or quality. Embodiments of a method of processing may include focusing and directing laser pulses to a region of the workpiece at a pulse repetition rate sufficiently high so that material is efficiently removed from the region and a quantity of unwanted material within the region, proximate to the region, or both is reduced relative to a quantity obtainable at a lower repetition rate. In at least one embodiment, an ultrashort pulse laser system may include at least one of a fiber amplifier or fiber laser. Various embodiments are suitable for at least one of dicing, cutting, scribing, and forming features on or within a semiconductor substrate. Workpiece materials may also include metals, inorganic or organic dielectrics, or any material to be micromachined with femtosecond and/or picosecond pulses, and in some embodiments with pulse widths up to a few nanoseconds. | 08-05-2010 |
20100203707 | SUBSTRATE DIVIDING METHOD - A substrate dividing method which can thin and divide a substrate while preventing chipping and cracking from occurring. This substrate dividing method comprises the steps of irradiating a semiconductor substrate | 08-12-2010 |
20100227453 | LASER PROCESSING METHOD - A laser processing method which can securely prevent particles from attaching to chips obtained by cutting a planar object is provided. When applying a stress to an object to be processed | 09-09-2010 |
20100248451 | Method for Laser Singulation of Chip Scale Packages on Glass Substrates - An improved method for singulation of compound electronic devices is presented. Compound electronic devices are manufactured by combining two or more substrates into an assembly containing multiple devices. Presented are methods for singulation of compound electronic devices using laser processing. The methods presented provide fewer defects such as cracking or chipping of the substrates while minimizing the width of the kerf and maintaining system throughput. | 09-30-2010 |
20100273313 | MANUFACTURING METHOD OF LASER PROCESSED PARTS, AND PRESSURE-SENSITIVE ADHESIVE SHEET FOR LASER PROCESSING USED FOR THE SAME - A manufacturing method of laser processed parts in which at least a pressure-sensitive adhesive layer is provided on a base material as a pressure-sensitive adhesive sheet for laser processing, using a material having specified physical properties. This method comprises adhering the pressure-sensitive adhesive sheet for laser processing to the laser beam exit side of the work by way of the pressure-sensitive adhesive layer, processing the work by irradiating the work with a laser beam of within 2 times of the irradiation intensity for forming a through-hole in the work, at higher than the irradiation intensity of threshold for inducing ablation of the work, and peeling the pressure-sensitive adhesive sheet for laser processing from the work after the machining. Therefore, contamination of the work surface by decomposition products can be effectively suppressed, and laser processed parts can be manufactured easily and at high production efficiency. | 10-28-2010 |
20100297831 | LASER PROCESSING METHOD FOR SEMICONDUCTOR WAFER - A laser processing method for a semiconductor wafer including a groove forming step of applying a pulsed laser beam having an absorption wavelength to the semiconductor wafer along a division line formed on the semiconductor wafer to thereby form a laser processed groove along the division line on the semiconductor wafer, wherein the pulse width of the pulsed laser beam to be applied in the groove forming step is set to 2 ns or less, and the peak energy density per pulse of the pulsed laser beam is set less than or equal to an inflection point where the depth of the laser processed groove steeply increases with an increase in the peak energy density. | 11-25-2010 |
20100304551 | PROTECTIVE FILM AGENT FOR LASER DICING AND WAFER PROCESSING METHOD USING THE PROTECTIVE FILM AGENT - A protective film agent for laser dicing according to the present invention comprises a solution having, dissolved therein, a water-soluble resin and at least one laser light absorber selected from the group consisting of a water-soluble dye, a water-soluble coloring matter, and a water-soluble ultraviolet absorber. The protective film agent is coated on a surface of a wafer, which is to be processed, and is then dried to form a protective film. Laser dicing through the protective film produces chips from the wafer. As a result, deposition of debris can be effectively prevented on the entire face of the chips, including their peripheral edge portions. | 12-02-2010 |
20100311225 | WAFER PROCESSING METHOD - A wafer processing method for dividing a wafer into individual devices along streets. The wafer processing method includes the steps of forming a division groove on the front side of the wafer along each street, attaching the front side of the wafer to the front side of a rigid plate having a plurality of grooves by using an adhesive resin, applying ultraviolet radiation to the adhesive resin to thereby increase the holding force of the adhesive resin, grinding the back side of the wafer to expose the division grooves to the back side of the wafer, attaching an adhesive tape to the back side of the wafer, immersing the wafer and the rigid plate in hot water to swell the adhesive resin, thereby decreasing the holding force of the adhesive resin, and removing the rigid plate from the front side of the wafer. | 12-09-2010 |
20100317172 | LASER PROCESSING APPARATUS AND LASER PROCESSING METHOD - A laser processing apparatus including a laser beam applying unit. The laser beam applying unit includes a laser beam generating unit, a focusing unit, and an optical system for guiding a laser beam from the laser beam generating unit to the focusing unit. The optical system includes a first polarization beam splitter for splitting the laser beam generated from the laser beam generating unit into a first laser beam and a second laser beam, a half-wave plate inserted between the laser beam generating unit and the first polarization beam splitter, a first mirror for reflecting the first laser beam transmitted through the first polarization beam splitter to an optical path parallel to the optical path of the second laser beam, a second mirror for reflecting the second laser beam in a direction perpendicular to the direction of incidence of the second laser beam, and a second polarization beam splitter located at a position where the first laser beam reflected by the first mirror intersects the second laser beam reflected by the second mirror. | 12-16-2010 |
20110008947 | APPARATUS AND METHOD FOR PERFORMING MULTIFUNCTION LASER PROCESSES - Embodiments of the present invention generally relate to a system used to form solar cell devices using processing modules adapted to perform one or more processes in the formation of the solar cell devices. In one embodiment, the system is adapted to form thin film solar cell devices by accepting a large unprocessed substrate and performing multiple deposition, material removal, cleaning, bonding, testing, and sectioning processes to form one or more complete, functional, and tested solar cell devices in custom sizes and/or shapes that can then be shipped to an end user for installation in a desired location to generate electricity. In one embodiment, the system is adapted to form one or more BIPV panels in custom sizes and/or shapes from a single large substrate for shipment to an end user. | 01-13-2011 |
20110021004 | METHOD OF CUTTING A SUBSTRATE, METHOD OF CUTTING A WAFER-LIKE OBJECT, AND METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE - A laser beam machining method and a laser beam machining device capable of cutting a work without producing a fusing and a cracking out of a predetermined cutting line on the surface of the work, wherein a pulse laser beam is radiated on the predetermined cut line on the surface of the work under the conditions causing a multiple photon absorption and with a condensed point aligned to the inside of the work, and a modified area is formed inside the work along the predetermined determined cut line by moving the condensed point along the predetermined cut line, whereby the work can be cut with a rather small force by cracking the work along the predetermined cut line starting from the modified area and, because the pulse laser beam radiated is not almost absorbed onto the surface of the work, the surface is not fused even if the modified area is formed. | 01-27-2011 |
20110027972 | METHOD OF CUTTING A SUBSTRATE AND METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE - A laser beam machining method and a laser beam machining device capable of cutting a work without producing a fusing and a cracking out of a predetermined cutting line on the surface of the work, wherein a pulse laser beam is radiated on the predetermined cut line on the surface of the work under the conditions causing a multiple photon absorption and with a condensed point aligned to the inside of the work, and a modified area is formed inside the work along the predetermined determined cut line by moving the condensed point along the predetermined cut line, whereby the work can be cut with a rather small force by cracking the work along the predetermined cut line starting from the modified area and, because the pulse laser beam radiated is not almost absorbed onto the surface of the work, the surface is not fused even if the modified area is formed. | 02-03-2011 |
20110034007 | DIVIDING METHOD FOR PLATELIKE WORKPIECE - A dividing method for a platelike workpiece having a two-layer structure such that a solder layer (metal layer) is formed on the back side of a wafer (substrate). First, a modified layer is formed in the wafer along each division line formed on the front side of the wafer. Thereafter, the workpiece is bent along each division line to thereby divide the wafer along each division line from the corresponding modified layer as a starting point and simultaneously form a weak portion in the solder layer along each division line. Thereafter, an expandion tape attached to the solder layer is expanded to apply an external force to the solder layer, thereby dividing the solder layer along each division line from the corresponding weak portion as a starting point. Thus, the workpiece is completely divided. | 02-10-2011 |
20110081769 | METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE - A chip provided with a layer for separation of a surface region and a hydrophilic surface is manufactured. One or both of a hydrophilic region and a hydrophobic region are formed on a substrate surface where the chip is placed. Liquid is dropped onto the hydrophilic region on the substrate surface, and the chip is placed thereon. The substrate and the chip are heated while being pressure-bonded so that the chip is fixed on the substrate surface, and then the surface region of the chip is separated. By providing a liquid layer in a position where the chip is placed, the chip can be placed on the substrate with high accuracy and thus productivity can be increased. | 04-07-2011 |
20110244659 | WAFER CUTTING METHOD AND A SYSTEM THEREOF - A method for cutting a semiconductor wafer by generating a crack within the wafer, and a system thereof, are provided. The method comprises irradiating a laser beam towards a surface of the wafer and converging the laser beam to form a focal point so that a focal volume defined by the focal point and a boundary of the laser beam within the wafer is formed. Energy encompassed within the focal volume causes the wafer located at the periphery of the focal volume to contract faster than the wafer located within the focal volume, thereby generating a crack within the wafer. | 10-06-2011 |
20110250734 | SPECIMEN PROCESSING APPARATUS AND METHOD THEREOF - An apparatus and a method of processing a specimen includes a final analysis specimen that is manufactured by sequentially performing specimen processing processes using a laser beam with respect to an initial laminate specimen loaded on a stage. As a result, the final specimen manufacturing time may be reduced and the quality of the final specimen may be improved. | 10-13-2011 |
20110263097 | METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE - According to one embodiment, a method for manufacturing semiconductor device can include forming a groove with a depth shallower than a thickness of a wafer. The method can include attaching a surface protection tape via a first bonding layer provided in the surface protection tape. The method can include grinding a surface of the wafer to divide the wafer into a plurality of semiconductor elements. The method can include forming an element bonding layer by attaching a bonding agent and turning the attached bonding agent into a B-stage state. The method can include attaching a dicing tape via a second bonding layer provided in the dicing tape. The method can include irradiating the first bonding layer with a first active energy ray. The method can include removing the surface protection tape. The method can include irradiating the second bonding layer with a second active energy ray. | 10-27-2011 |
20110275193 | METHOD AND APPARATUS FOR DIVIDING THIN FILM DEVICE INTO SEPARATE CELLS - A method and apparatus for dividing a thin film device having a first layer which is a lower electrode layer, a second layer which is an active layer and a third layer which is an upper electrode layer, the layers each being continuous over the device, into separate cells which are electrically interconnected in series. The dividing of the cells and the electrical connection between adjacent cells are carried out in a single pass of a process head across the device, the process head performing the following steps in the single pass: a) making a first cut through the first, second and third layers; b) making a second cut through the second and third layers, the second cut being adjacent to the first cut; c) making a third cut through the third layer the third cut being adjacent to the second cut and on the opposite side of the second cut to the first cut; d) using a first ink jet print head to deposit a non-conducting material into the first cut; and e) using a second ink jet print head to apply conducting material to bridge the non-conducting material in the first cut and either fully or partially fill the second cut such to form an electrical connection between the first layer and the third layer, wherein step (a) precedes step (d), step (d) precedes step (e) and step (b) precedes step (e), (otherwise the steps may be carried out in any order in the single pass of the process head across the device). The thin film device may be a solar panel, a lighting panel or a battery. | 11-10-2011 |
20110300692 | METHOD FOR DIVIDING A SEMICONDUCTOR FILM FORMED ON A SUBSTRATE INTO PLURAL REGIONS BY MULTIPLE LASER BEAM IRRADIATION - The present invention relates to a method for dividing a semiconductor film formed on a substrate into plural regions by multiple laser beam irradiation using a sequence of at least two laser beam treatments affecting essentially a same area of said film. Except of a final laser beam treatment, the treatments of said sequence of at least two laser beam treatments are used for a conditioning of the treated film area which is to be removed. Said final laser beam treatment is applied to actually remove material in order to form a groove. Further, the invention relates to an arrangement for dividing a semiconductor film formed on a substrate into plural regions by multiple laser beam irradiation using a sequence of at least two laser beam treatments affecting essentially a same area of said film. Said arrangement comprises a first conditioning laser for the treatments of said sequence of at least two laser beam treatments except of a final laser beam treatment and it comprises a second laser for said final laser beam treatment. | 12-08-2011 |
20110312158 | METHOD AND APPARATUS FOR DIVIDING THIN FILM DEVICE INTO SEPARATE CELLS - A method and apparatus for dividing a thin film device having a first layer which is a lower electrode layer, a second layer which is an active layer and a third layer which is an upper electrode layer, the layers each being continuous over the device, into separate cells which are electrically interconnected in series. The dividing of the cells and the electrical connection between adjacent cells are carried out in a single pass of a process head across the device, the process head performing the following steps in the single pass:
| 12-22-2011 |
20120009763 | SEMICONDUCTOR CHIP MANUFACTURING METHOD - A method for manufacturing semiconductor chips from a semiconductor wafer, including the steps of: a) arranging the wafer on a surface of an elastic film stretched on a first support frame having dimensions much greater than the wafer dimensions, so that, in top view, a ring-shaped film portion separates this outer contour from the inner contour of the frame; b) performing manufacturing operations by using equipment capable of receiving the first frame; c) arranging, on the ring-shaped film portion, a second frame of outer dimensions smaller than the inner dimensions of the first frame; d) cutting the film between the outer contour of the second frame and the inner contour of the first frame and removing the first frame; and e) performing manufacturing operations by using equipment capable of receiving the second frame. | 01-12-2012 |
20120058624 | METHOD AND STRUCTURE FOR FABRICATING SOLAR CELLS USING A THICK LAYER TRANSFER PROCESS - A method includes providing a donor substrate comprising single crystal silicon and having a surface region, a cleave region, and a thickness of material to be removed between the surface region and the cleave region. The method also includes introducing through the surface region a plurality of hydrogen particles within a vicinity of the cleave region using a high energy implantation process. The method further includes applying compressional energy to cleave the semiconductor substrate and remove the thickness of material from the donor substrate. | 03-08-2012 |
20120088354 | WORKPIECE DIVIDING METHOD - In a semiconductor wafer with a supporting tape attached to the back side of the wafer, a coating member having a refractive index close to that of the supporting tape is formed on a pear-skin surface of the supporting tape to thereby planarize the pear-skin surface. Thereafter, a pulsed laser beam is applied from the upper side of the coating member to the semiconductor wafer in the condition where the focal point of the pulsed laser beam is set at a predetermined depth in the semiconductor wafer. Accordingly, the pulsed laser beam can be sufficiently focused inside the semiconductor wafer to thereby well form a modified layer inside the semiconductor wafer. | 04-12-2012 |
20120100695 | MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE - A manufacturing method of a semiconductor device according to one embodiment includes attaching a front-side protecting member to a first main surface of a semiconductor wafer having an element region formed therein; laser-dicing the semiconductor wafer by applying a laser beam from a second main surface opposite to the first main surface of the semiconductor wafer; forming a backside metal film on the second main surface of the semiconductor wafer; and pressing a spherical surface against the front-side protecting member to expand the front-side protecting member and form individually divided semiconductor chips having the backside metal film attached thereto. | 04-26-2012 |
20120100696 | WORKPIECE DIVIDING METHOD - A workpiece has a substrate and a film formed on the front side of the substrate. A first laser beam applied to the film from the front side of the workpiece along streets formed on the film, thereby forming a plurality of laser processed grooves along the streets. An adhesive tape is attached to the front side of the workpiece. Thereafter, a second laser beam is applied to the substrate from the back side of the workpiece along the streets, with the focal point of the second laser beam set inside the substrate, forming a plurality of modified layers along the streets. Thereafter, the adhesive tape is expanded to divide the substrate along the streets, thereby obtaining a plurality of individual devices. The back side of the substrate of each device is then ground to remove the modified layers and reduce the thickness of each device to a predetermined thickness. | 04-26-2012 |
20120108035 | Method of Fabricating Semiconductor Device - A method of fabricating a semiconductor device includes preparing a semiconductor wafer having a top surface and a bottom surface. The semiconductor wafer is loaded onto a wafer chuck, and the bottom surface of the loaded semiconductor wafer faces the wafer chuck. A groove is formed in the top surface of the loaded semiconductor wafer by irradiating a second laser onto the top surface, and a reforming region is formed in the loaded semiconductor wafer under the groove by irradiating a first laser through wafer chuck and bottom surface of the semiconductor wafer into a region in which the first laser is focused. The semiconductor wafer is unloaded from the wafer chuck. The bottom surface of the semiconductor wafer is ground to decrease a thickness of the semiconductor wafer. The semiconductor wafer is separated along the groove and the reforming region, thereby forming a plurality of unit chips. | 05-03-2012 |
20120115308 | FABRICATION METHOD FOR DICING OF SEMICONDUCTOR WAFERS USING LASER CUTTING TECHNIQUES - A fabrication method for dicing semiconductor wafers using laser cutting techniques, which can effectively prevent the devices on semiconductor die units from the phenomenon of etching undercut caused by the sequential steps after laser cutting, comprises following steps: covering the wafer surface with a protection layer; dicing the wafer by laser and separating the die units from each other; removing the laser cutting residues on the devices on the die units by wet etching; removing the protection layer and cleaning the devices on the die units. The selection of materials for the protection layer must consider the following factors: where (1) the materials for the protection layer must have relatively good properties for adhering and covering on the wafer; (2) and the materials for the protection layer must be corrosion-resistant to the acidic or basic solution for etching residues. | 05-10-2012 |
20120135585 | METHOD FOR MANUFACTURING CHIP - A method for manufacturing a chip constituted by a functional device formed on a substrate comprises a functional device forming step of forming the functional device on one main face of a sheet-like object to be processed made of silicon; a first modified region forming step of converging a laser light at the object so as to form a first modified region along the one main face of the object at a predetermined depth corresponding to the thickness of the substrate from the one main face; a second modified region forming step of converging the laser light at the object so as to form a second modified region extending such as to correspond to a side edge of the substrate as seen from the one main face on the one main face side in the object such that the second modified region joins with the first modified region along the thickness direction of the object; and an etching step of selectively advancing etching along the first and second modified regions after the first and second modified region forming steps so as to cut out a part of the object and form the substrate. | 05-31-2012 |
20120190174 | LASER PROCESSING METHOD AND LASER PROCESSING APPARATUS - There is provided a laser processing method of a sapphire substrate including preparing a sapphire substrate on which plural stacked portions spaced from each other are formed, irradiating a short pulse laser beam from a laser light source, making the laser beam irradiated from the laser light source pass through a beam shaping module, adjusting a position of a light concentrating unit or the sapphire substrate such that the laser beam is concentrated to the inside of the sapphire substrate through the light concentrating unit, and forming a phase transformation area within the sapphire substrate by irradiating the laser beam into the sapphire substrate. The laser beam is introduced into the sapphire substrate while avoiding an area where the stacked portions are formed on the sapphire substrate, so that the phase transformation area is formed within the sapphire substrate. | 07-26-2012 |
20120190175 | LASER PROCESSING METHOD AND LASER PROCESSING APPARATUS - A laser beam machining method and a laser beam machining device capable of cutting a work without producing a fusing and a cracking out of a predetermined cutting line on the surface of the work, wherein a pulse laser beam is radiated on the predetermined cut line on the surface of the work under the conditions causing a multiple photon absorption and with a condensed point aligned to the inside of the work, and a modified area is formed inside the work along the predetermined determined cut line by moving the condensed point along the predetermined cut line, whereby the work can be cut with a rather small force by cracking the work along the predetermined cut line starting from the modified area and, because the pulse laser beam radiated is not almost absorbed onto the surface of the work, the surface is not fused even if the modified area is formed. | 07-26-2012 |
20120196427 | LASER WORKING METHOD, LASER WORKING APPARATUS, AND ITS MANUFACTURING METHOD - An object is irradiated with a laser light modulated by a reflection type spatial light modulator such that aberration of the laser light converged inside the object becomes a predetermined aberration or less. Therefore, aberration of the laser light generated at a position on which a converging point of the laser light is located is made as small as possible, to enhance the energy density of the laser light at that position, which makes it possible to form a modified region with a high function as a starting point for cutting. In addition, because the reflection type spatial light modulator is used, it is possible to improve the utilization efficiency of the laser light as compared with a transmissive type spatial light modulator. | 08-02-2012 |
20120208349 | Support for Wafer Singulation - A support substrate or chuck | 08-16-2012 |
20120289027 | DEVICE PROCESSING METHOD - In a device processing method, a laser beam is applied to a wafer along division lines from the back side of the wafer, thereby forming a division start point inside the wafer along the division lines at a depth not reaching the finished thickness of each device. A protective member is attached to the front side of the wafer before or after performing the division start points are formed. An external force is applied through the protective member to the wafer, thereby dividing the wafer along the division lines to obtain the individual devices. The back side of the wafer is ground to remove the modified layers, and a silicon nitride film is formed on at least the side surface of each device. The silicon nitride film has a gettering effect and is formed on the side surface of each device, which surface is formed by a cleavage plane. | 11-15-2012 |
20120289028 | WAFER DIVIDING METHOD - A wafer dividing method including a step of applying a laser beam to a wafer along division lines with the focal point of the laser beam set inside the wafer, thereby forming modified layers inside the wafer along the division lines; a step of attaching an adhesive tape to the wafer, the adhesive tape having a base sheet and an adhesive layer; a dividing step of applying an external force to the wafer by expanding the adhesive tape, thereby dividing the wafer along the division lines to obtain a plurality of device chips; and a debris catching step of heating the adhesive tape to thereby soften the adhesive layer such that it enters the space between any adjacent ones of the device chips obtained by the dividing step, thereby catching debris generated on the side surface of each device chip in the dividing step to the adhesive layer by adhesion. | 11-15-2012 |
20120329248 | METHOD OF CUTTING SEMICONDUCTOR SUBSTRATE - Multiphoton absorption is generated, so as to form a part which is intended to be cut | 12-27-2012 |
20130017670 | LASER PROCESSING METHOD AND LASER PROCESSING APPARATUS - A laser processing method comprising a step of irradiating an object to be processed with laser light elliptically polarized with an ellipticity of other than 1 such that a light-converging point of the laser light is located within the object along the major axis of an ellipse indicative of the elliptical polarization of laser light, along a line which the object is intended to be cut, to form a modified region caused by multiphoton absorption within the object, along the line which the object is intended to be cut. | 01-17-2013 |
20130089969 | Method for Slicing a Substrate Wafer - A method for slicing a monocrystalline semiconductor layer ( | 04-11-2013 |
20130102127 | MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE - A manufacturing method of a semiconductor device having an ohmic electrode is disclosed. The manufacturing method includes: forming a metal thin film on a rear surface of a semiconductor substrate; forming an ohmic electrode by laser annealing by irradiating the metal thin film with laser beam; and dicing the semiconductor substrate into chips by cutting at a dicing region of the semiconductor substrate. In forming the ohmic electrode, laser irradiation of the metal thin film is performed on a chip-by-chip basis while the dicing region is not being irradiated with the laser beam. | 04-25-2013 |
20130115756 | PROCESSING METHOD FOR SEMICONDUCTOR WAFER HAVING PASSIVATION FILM ON THE FRONT SIDE THEREOF - A semiconductor wafer processing method forms a plurality of wafer dividing grooves respectively along a plurality of crossing streets formed on the front side of a semiconductor substrate of a semiconductor wafer to thereby partition a plurality of regions where a plurality of devices are respectively formed. The semiconductor wafer has a passivation film formed on the front side of the semiconductor substrate so as to cover the devices and the streets. A first laser beam is applied to the passivation film along each street to thereby form a film dividing groove in the passivation film along each street. A second laser beam is applied to the semiconductor substrate along the film dividing groove formed in the passivation film, thereby forming the wafer dividing groove in the semiconductor substrate along each street. | 05-09-2013 |
20130122688 | PRESSURE-SENSITIVE ADHESIVE SHEET FOR DICING AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE USING PRESSURE-SENSITIVE ADHESIVE SHEET FOR DICING - An object of the present invention is to provide a pressure-sensitive adhesive sheet for dicing that is capable of preventing scratching of an adsorption stage when laser-scribing a semiconductor wafer. Provided is a pressure-sensitive adhesive sheet for dicing having a base and a pressure-sensitive adhesive layer provided on the base, in which 0.02 to 5 parts by weight of an ultraviolet absorber is contained in the pressure-sensitive adhesive layer with respect to 100 parts by weight of resin solid content, and in which the light transmittance at a wavelength of 355 nm of the pressure-sensitive adhesive sheet for dicing is 30% to 80%. | 05-16-2013 |
20130143389 | CONTROLLED PROCESS AND RESULTING DEVICE - A method for forming a multi-material thin film includes providing a multi-material donor substrate comprising single crystal silicon and an overlying film comprising GaN. Energetic particles are introduced through a surface of the multi-material donor substrate to a selected depth within the single crystal silicon. The method includes providing energy to a selected region of the donor substrate to initiate a controlled cleaving action in the donor substrate. Then, a cleaving action is made using a propagating cleave front to free a multi-material film from a remaining portion of the donor substrate, the multi-material film comprising single crystal silicon and the overlying film. | 06-06-2013 |
20130183811 | WAFER PROCESSING METHOD - A wafer processing method of dividing a wafer along streets. The wafer processing method includes a protective tape attaching step of attaching a protective tape to the front side of the wafer, a modified layer forming step of holding the wafer through the protective tape on a chuck table of a laser processing apparatus under suction and next applying a laser beam having a transmission wavelength to the wafer from the back side of the wafer along the streets, thereby forming a modified layer inside the wafer along each street, and a wafer dividing step of canceling suction holding of the wafer by the chuck table and next applying an air pressure to the wafer now placed on the holding surface in the condition where horizontal movement of the wafer is limited, thereby dividing the wafer along each street where the modified layer is formed, thus obtaining individual devices. | 07-18-2013 |
20130237035 | METHOD AND APPARATUS FOR LASER SINGULATION OF BRITTLE MATERIALS - An improved method for singulation of electronic substrates into dice uses a laser to first form cuts in the substrate and then chamfers the edges of the cuts by altering the laser parameters. The chamfers increase die break strength by reducing the residual damage and removes debris caused by the initial laser cut without requiring additional process steps, additional equipment or consumable supplies. | 09-12-2013 |
20130252402 | LASER PROCESSING METHOD - A laser processing method which can highly accurately cut objects to be processed having various laminate structures is provided. An object to be processed comprising a substrate and a laminate part disposed on the front face of the substrate is irradiated with laser light L while a light-converging point P is positioned at least within the substrate, so as to form a modified region due to multiphoton absorption at least within the substrate, and cause the modified region to form a starting point region for cutting. When the object is cut along the starting point region for cutting, the object | 09-26-2013 |
20130252403 | METHOD OF CUTTING SEMICONDUCTOR SUBSTRATE - Multiphoton absorption is generated, so as to form a part which is intended to be cut | 09-26-2013 |
20130273717 | Apparatus and Method for the Singulation of a Semiconductor Wafer - The present disclosure is directed to an apparatus for the singulation of a semiconductor substrate or wafer. In some embodiments the singulation apparatus comprises a plurality of cutting devices. The cutting devices are configured to form multiple concurrent cutting lines in parallel on a surface of the semiconductor wafer. In some embodiments, the singulation apparatus comprises at least two dicing saws or laser modules. The disclosed singulation apparatus can dice the semiconductor wafer into individual chips by dicing in a direction across a complete circumferential edge of the wafer, thereby decreasing process time and increasing throughput. | 10-17-2013 |
20130280890 | LASER AND PLASMA ETCH WAFER DICING USING UV-CURABLE ADHESIVE FILM - Laser and plasma etch wafer dicing using UV-curable adhesive films is described. In an example, a method includes forming a mask above the semiconductor wafer. The semiconductor wafer is coupled to a carrier substrate by a UV-curable adhesive film. The mask covers and protects the integrated circuits. The mask is patterned with a laser scribing process to provide a patterned mask with gaps. The patterning exposes regions of the semiconductor wafer between the integrated circuits. The semiconductor wafer is then etched through the gaps in the patterned mask to form singulated integrated circuits. The UV-curable adhesive film is then irradiated with ultra-violet (UV) light. The singulated integrated circuits are then detached from the carrier substrate. | 10-24-2013 |
20130316517 | SUBSTRATE DIVIDING METHOD - A substrate dividing method which can thin and divide a substrate while preventing chipping and cracking from occurring. This substrate dividing method comprises the steps of irradiating a semiconductor substrate | 11-28-2013 |
20130323909 | METHOD FOR FABRICATING SEMICONDUCTOR COMPONENTS HAVING LASERED FEATURES CONTAINING DOPANTS - A method for fabricating semiconductor components includes the steps of providing a semiconductor substrate having a circuit side, a back side and integrated circuits and circuitry on the circuit side; thinning the substrate from the back side to a selected thickness to form a thinned substrate; applying a dopant to the back side of the thinned substrate; and laser processing the back side of the thinned substrate to form a plurality of patterns of lasered features containing the dopant. The dopant can be selected to modify properties of the semiconductor substrate such as carrier properties, gettering properties, mechanical properties or visual properties. | 12-05-2013 |
20130344684 | METHODS AND SYSTEMS FOR USING SUBSURFACE LASER ENGRAVING (SSLE) TO CREATE ONE OR MORE WAFERS FROM A MATERIAL - In accordance with some embodiments, a method for using SSLE to create one or more wafers from a material is provided, the method comprising: using a laser light beam to etch pits in the material to create one or more layers of etch pits in a subsurface of the material; and dividing the material into one or more individual wafers with an etch. In accordance with some embodiments, a system for using SSLE to create one or more wafers from a material is provided, the system comprising: a controller for controlling the position of a focal point of a laser light beam with respect to the material and causing an irradiation of the laser light beam at a plurality of focal points; and an etch for splitting the material into the one or more wafers based on the plurality of focal points. | 12-26-2013 |
20130344685 | PROCESSING METHOD AND PROCESSING APPARATUS - A processing method for etching a workpiece is disclosed. While etching gas is supplied into an etching chamber in which a workpiece held on a holding face of a holding table is accommodated, a laser beam of a wavelength having a transparency through the holding table and the workpiece is irradiated upon the workpiece from the opposite side to the holding face of the holding table such that the focal point of the laser beam is positioned in the inside of a processing region of the workpiece to excite the processing region to induce etching. | 12-26-2013 |
20130344686 | METHOD OF CUTTING OBJECT TO BE PROCESSED - A method of cutting an object which can accurately cut the object is provided. An object to be processed | 12-26-2013 |
20140004685 | LASER AND PLASMA ETCH WAFER DICING WITH A DOUBLE SIDED UV-CURABLE ADHESIVE FILM | 01-02-2014 |
20140017881 | LASER SCRIBING AND PLASMA ETCH FOR HIGH DIE BREAK STRENGTH AND CLEAN SIDEWALL - In embodiments, a hybrid wafer or substrate dicing process involving an initial laser scribe and subsequent plasma etch is implemented for die singulation. The laser scribe process may be used to cleanly remove a mask layer, organic and inorganic dielectric layers, and device layers. The laser etch process may then be terminated upon exposure of, or partial etch of, the wafer or substrate. In embodiments, a multi-plasma etching approach is employed to dice the wafers where an isotropic etch is employed to improve the die sidewall following an anisotropic etch. The isotropic etch removes anisotropic etch byproducts, roughness, and/or scalloping from the anisotropically etched die sidewalls after die singulation. | 01-16-2014 |
20140038392 | SYSTEMS AND METHODS FOR LASER SPLITTING AND DEVICE LAYER TRANSFER - Methods and systems are provided for the split and separation of a layer of desired thickness of crystalline semiconductor material containing optical, photovoltaic, electronic, micro-electro-mechanical system (MEMS), or optoelectronic devices, from a thicker donor wafer using laser irradiation. | 02-06-2014 |
20140057412 | METHOD FOR FUSING A LASER FUSE AND METHOD FOR PROCESSING A WAFER - A method for fusing a laser fuse in accordance with various embodiments may include: providing a semiconductor workpiece having a substrate region and at least one laser fuse; fusing the at least one laser fuse from a back side of the substrate region by means of an infrared laser beam. | 02-27-2014 |
20140057413 | Methods for fabricating devices on semiconductor substrates - The present invention relates to insertion of a substrate separation step in fabrication of electronics, optoelectronics and microelectromechanical devices (MEMS), particularly double-sided devices which functionalities require designs and fabrication processes at both sides of substrates. In the method, both sides of a semiconductor substrate are processed, prior to slicing of the substrate from the sidewall into two pieces, and the device fabrication continues on the new surfaces of the two resulting substrates after the slicing. | 02-27-2014 |
20140057414 | MASK RESIDUE REMOVAL FOR SUBSTRATE DICING BY LASER AND PLASMA ETCH - Methods of dicing substrates having a plurality of ICs. A method includes forming a mask and patterning the mask with a femtosecond laser scribing process to provide a patterned mask with gaps. The patterning exposes regions of the substrate between the ICs. The substrate is etched through the gaps in the patterned mask to singulate the IC. The mask is removed and metallized bumps on the diced substrate are contacted with an inorganic acid solution to remove mask residues. | 02-27-2014 |
20140080287 | METHOD FOR SINGULATING A COMPONENT COMPOSITE ASSEMBLY - A method relates to separating a component composite into a plurality of component regions, wherein the component composite is provided having a semiconductor layer sequence comprising a region for generating or for receiving electromagnetic radiation. The component composite is mounted on a rigid subcarrier. The component composite is separated into the plurality of component regions, wherein one semiconductor body is produced from the semiconductor layer sequence for each component region. The component regions are removed from the subcarrier. | 03-20-2014 |
20140080288 | LASER PROCESSING METHOD - A laser processing method which can highly accurately cut objects to be processed having various laminate structures is provided. An object to be processed comprising a substrate and a laminate part disposed on the front face of the substrate is irradiated with laser light L while a light-converging point P is positioned at least within the substrate, so as to form a modified region due to multiphoton absorption at least within the substrate, and cause the modified region to form a starting point region for cutting. When the object is cut along the starting point region for cutting, the object | 03-20-2014 |
20140094018 | Method for Dicing a Substrate with Back Metal - The present invention provides a method for dicing a substrate with back metal, the method comprising the following steps. The substrate is provided with a first surface and a second surface wherein the second surface is opposed to the first surface. A mask layer is provided on the first surface of the substrate and a thin film layer is provided on the second surface of the substrate. The first surface of the substrate is diced through the mask layer to expose the thin film layer on the second surface of the substrate. A fluid from a fluid jet is applied to the thin film layer on the second surface of the substrate after the thin film layer has been exposed by the dicing step. | 04-03-2014 |
20140094019 | WAFER PROCESSING METHOD - A wafer processing method of dividing a wafer along a plurality of crossing streets formed on the wafer to obtain individual chips. The wafer processing method includes a modified layer forming step of applying a laser beam having a transmission wavelength to the wafer along each street to thereby form a modified layer inside the wafer and a dividing step of applying an external force to the wafer to thereby divide the wafer into the individual chips along each street with the modified layer functioning as a division start point. In the modified layer forming step, the modified layer is formed at each intersection of the crossing streets at a height where cracking can be avoided on the corner edges of each chip obtained by dividing the wafer. | 04-03-2014 |
20140094020 | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE - Some embodiments of the present invention relate to a semiconductor device and a method of manufacturing a semiconductor device capable of preventing the deterioration of electrical characteristics. A p-type collector region is provided on a surface layer of a backside surface of an n-type drift region. A p | 04-03-2014 |
20140099777 | Singulation Processes - In one embodiment, a method of forming a semiconductor device comprises forming a groove on and/or over a first side of a substrate. A dicing layer is formed from a second side of the substrate using a laser process. The second side is opposite the first side. The dicing layer is disposed under the groove within the substrate. The substrate is singulated through the dicing layer. | 04-10-2014 |
20140106545 | LASER PROCESSING METHOD FOR WORKPIECE - During the performance of a laser processing step of applying a laser beam to a wafer to form modified layers inside the wafer respectively along division lines, a predetermined one of the modified layers already formed is imaged by a camera from the back side of the wafer with predetermined timing, and a positional deviation of the predetermined modified layer from the corresponding division line is detected to calculate a correction value. Then, the correction value is added to data on applied position of the laser beam to thereby make the applied position of the laser beam coincide with each division line. Accordingly, a positional deviation of the modified layer to be formed after this correction from each division line can be suppressed. | 04-17-2014 |
20140120699 | FABRICATION METHOD FOR DICING OF SEMICONDUCTOR WAFERS USING LASER CUTTING TECHNIQUES - A fabrication method for dicing semiconductor wafers using laser cutting techniques, which can effectively prevent the devices on semiconductor die units from the phenomenon of etching undercut caused by the sequential steps after laser cutting, comprises following steps: covering the wafer surface with a protection layer; dicing the wafer by laser and separating the die units from each other; removing the laser cutting residues on the devices on the die units via wet etching by an acidic water solution; removing the protection layer by a non-acidic water solution and cleaning the devices on the die units. The selection of materials for the protection layer must consider the following factors: where (1) the materials for the protection layer must have relatively good properties for adhering and covering on the wafer; (2) the materials for the protection layer must be corrosion-resistant to the acidic water solution for etching residues. | 05-01-2014 |
20140154871 | METHOD AND SYSTEM FOR MANUFACTURING SEMICONDUCTOR DEVICE - A method for manufacturing a semiconductor device is provided. The method contains steps of providing the semiconductor device including a working area; directing a medium flow onto the working area; configuring a lens in contact with the medium flow; and directing a laser beam to the working area through the lens and the medium flow. A laser processing for manufacturing a semiconductor device is also provided. | 06-05-2014 |
20140179083 | HIGH DIE STRENGTH SEMICONDUCTOR WAFER PROCESSING METHOD AND SYSTEM - Embodiments of methods and systems for processing a semiconductor wafer are described. In one embodiment, a method for processing a semiconductor wafer involves performing laser stealth dicing on the semiconductor wafer to form a stealth dicing layer within the semiconductor wafer and after performing laser stealth dicing, cleaning the semiconductor wafer from a back-side surface of the semiconductor wafer with a blade to remove at least a portion of the stealth dicing layer. Other embodiments are also described. | 06-26-2014 |
20140179084 | WAFER DICING FROM WAFER BACKSIDE - Methods of dicing semiconductor wafers, each wafer having a plurality of integrated circuits, are described. For example, a method includes applying a protection tape to a wafer front side, the wafer having a dicing tape attached to the wafer backside. The dicing tape is removed from the wafer backside to expose a die attach film disposed between the wafer backside and the dicing tape. Alternatively, if no die attach film is initially disposed between the wafer backside and the dicing tape, a die attach film is applied to the wafer backside at this operation. A water soluble mask is applied to the wafer backside. Laser scribing is performed on the wafer backside to cut through the mask, the die attach film and the wafer, including all layers included within the front side and backside of the wafer. A plasma etch is performed to treat or clean surfaces of the wafer exposed by the laser scribing. A wafer backside cleaning is performed and a second dicing tape is applied to the wafer backside. The protection tape is the removed from the wafer front side. | 06-26-2014 |
20140213043 | METHOD OF RADIATIVELY GROOVING A SEMICONDUCTOR SUBSTRATE - A method of radiatively scribing a substantially planar semiconductor substrate using a laser scribing apparatus, uses a laser scribing head configured and arranged to produce a two-dimensional array of laser beam spots to effect the scribing. In an embodiment, the spots of the array extend substantially parallel to X and Y directions in the plane of the substrate. In an embodiment, spots at a periphery in one or both directions of the array have a lower intensity than laser beams in a central portion of the array. | 07-31-2014 |
20140242780 | Method and Apparatus for Plasma Dicing a Semi-Conductor Wafer - The present invention provides a method for plasma dicing a substrate. The method comprising: providing a process chamber having a wall; providing a plasma source adjacent to the wall of the process chamber; providing a work piece support within the process chamber; placing the substrate on a carrier support to form a work piece; providing an intermediate ring interposed between the substrate and the frame; loading the work piece onto the work piece support; generating a plasma through the plasma source; and etching the work piece through the generated plasma. | 08-28-2014 |
20140248757 | WAFER PROCESSING METHOD - A wafer processing method for dividing a wafer along a plurality of division lines to obtain a plurality of individual chips. The wafer processing method includes a filament forming step of applying a pulsed laser beam having a transmission wavelength to the wafer along each division line in the condition where the focal point of the pulsed laser beam is set inside the wafer in a subject area to be divided, thereby forming a plurality of amorphous filaments inside the wafer along each division line, and an etching step of etching the amorphous filaments formed inside the wafer along each division line by using an etching agent to thereby divide the wafer into the individual chips along the division lines. | 09-04-2014 |
20140248758 | METHOD OF SEVERING A SEMICONDUCTOR DEVICE COMPOSITE - A method of severing a semiconductor device composite includes a carrier having a main surface and a semiconductor layer sequence arranged on the main surface including forming a separating trench in the semiconductor device composite by a first laser cut such that the separating trench only partially severs the semiconductor device composite in a vertical direction running perpendicular to the main surface, and severing the semiconductor device composite completely along the separating trench with a severing cut with a laser. | 09-04-2014 |
20140273402 | METHOD FOR CUTTING WAFER - A method for cutting wafers includes following steps. A silicon wafer is provided. A metal layer is formed on a top side of the silicon wafer. A bump layer is formed on the metal layer. A backside grinding tape is attached on the bump layer. A bottom side of the silicon wafer is half cut to form a cutting race. The bottom side of the silicon wafer is ground, so that a thickness of the silicon wafer is a predetermined thickness and only partial cutting race remains. The backside grinding tape is removed. A dicing tape is attached on the bottom side of the silicon wafer. The metal layer is cut by a laser. The metal layer is communicated with the cutting race. The manufacturing cost is reduced without crumbling or cracking. The chippings on the top or bottom side of the silicon wafer can be removed. | 09-18-2014 |
20140329373 | Method of Dicing a Wafer - A method of dicing a semiconductor wafer includes forming a layer stack on a first main surface of a substrate. The layer stack and a portion of the substrate are etched according to a pattern defining an intended dicing location to obtain a trench structure. The substrate is irradiated with a laser beam to locally modify the substrate between a bottom of the trench structure and a second main surface of the substrate opposite to the first main surface. | 11-06-2014 |
20140370688 | METHOD FOR SEPARATING AND TRANSFERRING IC CHIPS - A method for separating a multiple number of semiconductor devices or semiconductor integrated circuits from a wafer on which the multiple number of semiconductor devices or semiconductor integrated circuits are formed is provided. The method includes forming a mask pattern on a surface of the wafer, and separating each of the semiconductor devices or semiconductor integrated circuits along the mask pattern formed on the surface of the wafer. The mask pattern is a repeated pattern without having a lattice line shape, and the step of separating each of the semiconductor devices or semiconductor integrated circuits is performed by plasma etching. | 12-18-2014 |
20150017784 | SEMICONDUCTOR PROCESSING APPARATUS USING LASER - Provided is a semiconductor processing apparatus, including a first laser beam irradiation unit having a first variable beam expanding telescope and a first galvanometer scanner transferring a first laser beam having a first wavelength, a second laser beam irradiation unit having a second variable beam expanding telescope and a second galvanometer scanner transferring a second laser beam having a second wavelength, and a telecentric lens. | 01-15-2015 |
20150044857 | DIVIDING METHOD FOR WAFER - A dividing method for a wafer includes a step of irradiating a laser beam along streets to form modified regions in an inside of a wafer, a step of dividing the wafer into individual chips beginning with starting points given by the modified regions, a step of placing a processing chamber in which the wafer is charged to a vacuum state and fill the processing chamber with inert gas, and a step of introducing etching gas into the processing chamber filled with the inert gas to etch side faces of the chips. | 02-12-2015 |
20150056784 | Method for Manufacturing a Semiconductor Device by Thermal Treatment with Hydrogen - A semiconductor device is manufactured by forming semiconductor elements extending between a front surface and a rear side of a semiconductor layer. This includes forming a porous area at a surface of a semiconductor body that includes a porous structure in the porous area, forming the semiconductor layer on the porous area by epitaxial growth so as to have a thickness in a range of 5 μm to 200 μm, and forming semiconductor regions including source, drain, body, emitter, base and/or collector regions in a front surface of the semiconductor layer by ion implantation. After forming the semiconductor regions, hydrogen is introduced into the porous area by a thermal treatment, activating a reallocation of pores and causing cavities to be generated. The semiconductor layer is separated from the semiconductor body along the porous area. After the separation, rear side processing is applied to the semiconductor layer. | 02-26-2015 |
20150056785 | SUBSTRATE DIVIDING METHOD - A substrate dividing method which can thin and divide a substrate while preventing chipping and cracking from occurring. This substrate dividing method comprises the steps of irradiating a semiconductor substrate | 02-26-2015 |
20150079762 | METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE - To provide a semiconductor device having improved reliability. A method of manufacturing a semiconductor device according to one embodiment includes a step of cutting, in a dicing region arranged between two chip regions adjacent to each other, a wafer along an extending direction of the dicing region. The dicing region has therein a plurality of metal patterns in a plurality of columns. In the step of cutting the wafer, one or more of the columns of metal patterns formed in a plurality of columns are removed, and the metal patterns of the column(s) different from the above-mentioned one or more of the columns are not removed. | 03-19-2015 |
20150104931 | APPARATUS, DEVICE AND METHOD FOR WAFER DICING - An apparatus, device and method for wafer dicing is disclosed. In one example, the apparatus discloses: a wafer holding device having a first temperature; a die separation bar moveably coupled to the wafer holding device; and a cooling device coupled to the apparatus and having a second temperature which enables the die separation bar to fracture an attachment material in response to movement with respect to the wafer holding device. In another example, the method discloses: receiving a wafer having an attachment material applied to one side of the wafer; placing the wafer in a holding device having a first temperature; urging a die separation bar toward the wafer; and cooling the attachment material to a second temperature, which is lower than the first temperature, until the attachment material fractures in response to the urging. | 04-16-2015 |
20150111365 | LASER PROCESSING METHOD AND LASER PROCESSING APPARATUS - A laser beam machining method and a laser beam machining device capable of cutting a work without producing a fusing and a cracking out of a predetermined cutting line on the surface of the work, wherein a pulse laser beam is radiated on the predetermined cut line on the surface of the work under the conditions causing a multiple photon absorption and with a condensed point aligned to the inside of the work, and a modified area is formed inside the work along the predetermined determined cut line by moving the condensed point along the predetermined cut line, whereby the work can be cut with a rather small force by cracking the work along the predetermined cut line starting from the modified area and, because the pulse laser beam radiated is not almost absorbed onto the surface of the work, the surface is not fused even if the modified area is formed. | 04-23-2015 |
20150126017 | SYSTEMS AND METHODS FOR ULTRASONICALLY CLEAVING A BONDED WAFER PAIR - Methods for the ultrasonic cleaving of bonded wafer pairs include positioning the bonded wafer pair in a wafer holder disposed in a tank containing a volume of liquid and ultrasonically agitating the volume of liquid in the tank with an ultrasonic agitator. The ultrasonic agitation of the volume of liquid cleaves the bonded wafer pair into a handle wafer and a silicon-on-insulator wafer. | 05-07-2015 |
20150311118 | DICING TAPE PROTECTION FOR WAFER DICING USING LASER SCRIBE PROCESS - Methods of and apparatuses for dicing semiconductor wafers, each wafer having a plurality of integrated circuits, are described. In an example, a method of scribing a semiconductor wafer having a plurality of integrated circuits involves adhering a backside of a semiconductor wafer to an inner portion of a carrier tape of a substrate carrier that includes a tape frame mounted above the carrier tape. The method also involves overlaying a protective frame above a front side of the semiconductor wafer and above an exposed outer portion of the carrier tape, the protective frame having an opening exposing an inner region of the front side of the semiconductor wafer. The method also involves laser scribing the front side of the semiconductor wafer with the protective frame in place. | 10-29-2015 |
20150311119 | SUBSTRATE DIVIDING METHOD - A substrate dividing method which can thin and divide a substrate while preventing chipping and cracking from occurring. This substrate dividing method comprises the steps of irradiating a semiconductor substrate | 10-29-2015 |
20150318210 | METHOD AND APPARATUS FOR LASER DICING OF WAFERS - A method includes cutting a semiconductor wafer on a substrate wafer using at least one laser. By setting the laser to a set of parameters that define a laser beam, the laser beam can avoid ablation of the substrate wafer. The laser beam is also set equal to, or within, an ablation threshold of the semiconductor wafer for selectively ablating the semiconductor wafer. The set of parameters includes wavelength, pulse width and pulse frequency. | 11-05-2015 |
20150340542 | PIXELATED SILICON CELLS OR INTEGRATED CIRCUITS - A method, apparatus and system for flexible, ultra-thin, and high efficiency pixelated silicon or other semiconductor photovoltaic solar cell array fabrication is disclosed. A structure and method of creation for a pixelated silicon or other semiconductor photovoltaic solar cell array with interconnects is described using a manufacturing method that is simplified compared to previous versions of pixelated silicon photovoltaic cells that require more microfabrication steps. | 11-26-2015 |
20160005654 | SYSTEM FOR MANUFACTURING A SEMICONDUCTOR PACKAGE AND METHOD OF MANUFACTURING THE SAME - Provided are a system and method for manufacturing a semiconductor package. The system includes: a laser marker configured to irradiate a first laser beam on a strip to make a mark on the strip; and a laser saw configured to irradiate a second laser beam on the strip to cut the strip into individual semiconductor packages. | 01-07-2016 |
20160027697 | HYBRID WAFER DICING APPROACH USING A RECTANGULAR SHAPED TWO-DIMENSIONAL TOP HAT LASER BEAM PROFILE OR A LINEAR SHAPED ONE-DIMENSIIONAL TOP HAT LASER BEAM PROFILE LASER SCRIBING PROCESS AND PLASMA ETCH PROCESS - Methods of dicing semiconductor wafers, each wafer having a plurality of integrated circuits, are described. In an example, a method of dicing a semiconductor wafer having a plurality of integrated circuits involves forming a mask above the semiconductor wafer, the mask composed of a layer covering and protecting the integrated circuits. The mask is then patterned with a top hat laser beam profile laser scribing process to provide a patterned mask with gaps, exposing regions of the semiconductor wafer between the integrated circuits. The semiconductor wafer is then plasma etched through the gaps in the patterned mask to singulate the integrated circuits. | 01-28-2016 |
20160040042 | COMPOSITION FOR FORMING ADHESIVE LAYER OF DICING FILM, AND DICING FILM - There are provided a composition for forming an adhesive layer of a dicing film including: a silicon compound oil including at least one reactive functional group; an adhesive binder; and a photoinitiator, wherein a weight ratio of the silicon compound oil including at least one reactive functional group to the adhesive binder is 0.01% to 4.5%, a dicing film including an adhesive layer including the composition, a dicing die bonding film including the dicing film, and a method for dicing a semiconductor wafer using the dicing die bonding film. | 02-11-2016 |
20160040043 | COMPOSITION FOR FORMING ADHESIVE LAYER OF DICING FILM, AND DICING FILM - There are provided a composition for forming an adhesive layer of a dicing film, including: a polymer additive including at least one polymer selected from the group consisting of a polymer containing a (meth)acrylate-based functional group and a non-polar functional group, a (meth)acrylate-based polymer containing at least one fluorine, and a silicon-modified (meth)acrylate-based polymer containing a reactive functional group; an adhesive binder; and a photoinitiator, wherein a weight ratio of the polymer additive to the adhesive binder is 0.01% to 4.5%, a dicing film including an adhesive layer including the composition, a dicing die bonding film including the dicing film, and a method for dicing a semiconductor wafer using the dicing die bonding film. | 02-11-2016 |
20160079118 | METHOD OF PROTECTING A MOUNTING TAPE DURING LASER SINGULATION OF A WAFER - A method of singulating a semiconductor wafer with laser energy while the semiconductor wafer is supported on a mounting tape during singulation comprises the step of depositing a coating material onto a portion of the mounting tape adjacent to a perimeter of the semiconductor wafer to form a protective layer over the mounting tape. The semiconductor wafer is then cut with a laser beam such that the laser beam at least partially impinges upon the protective layer during cutting of the semiconductor wafer. After singulation of the semiconductor wafer, the protective layer is removed from the mounting tape. | 03-17-2016 |
20160079119 | MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE - A method for manufacturing a semiconductor device includes preparing a structure including a semiconductor substrate having a plurality of semiconductor elements thereon, a cover layer covering the semiconductor elements, a supporting substrate, and an adhesive layer between the first adhesive layer and the supporting substrate, removing side edge portions of the semiconductor substrate and the adhesive layer, such that a side surface of the cover layer is exposed, forming, in the supporting substrate, fragile portions, the fragile portions extending in a first direction, attaching an adhesive sheet on a surface of the supporting substrate that is opposite to a surface that is in contact with the adhesive layer, and pulling on the adhesive sheet in a second direction different from the first direction, to peel off the supporting substrate and the adhesive layer from the semiconductor substrate having the semiconductor elements. | 03-17-2016 |
20160086853 | WAFER PROCESSING METHOD - A wafer is divided along a plurality of crossing division lines to obtain a plurality of individual devices. The division lines are formed on the front side of the wafer to define a plurality of separate device regions. An adhesive film is applied to the back side of the wafer and the other side of the adhesive film is attached to a dicing tape composed of a base sheet and an ultraviolet curable adhesive layer formed on the base sheet. The adhesive film is attached to the ultraviolet curable adhesive layer of the dicing tape. Ultraviolet light is applied to the dicing tape to thereby cure the adhesive layer. A rotating cutting blade cuts the wafer together with the adhesive film along the division lines, dividing the wafer into the individual devices. The cutting blade is positioned so that its cutting edge cuts into the cured adhesive layer. | 03-24-2016 |
20160111333 | SUBSTRATE DIVIDING METHOD - A substrate dividing method which can thin and divide a substrate while preventing chipping and cracking from occurring. This substrate dividing method comprises the steps of irradiating a semiconductor substrate | 04-21-2016 |
20160163549 | LASER PROCESSING METHOD - A planar object to be processed | 06-09-2016 |
20190148132 | METHOD OF MANUFACTURING SMALL-DIAMETER WAFER | 05-16-2019 |
20220139754 | PROTECTIVE FILM AGENT FOR LASER DICING - A protective film agent for laser dicing that includes a solution in which at least a water-soluble resin, an organic solvent, and an ultraviolet absorber are mixed and in which the content of sodium (Na) of the solution is equal to or lower than 100 ppb in weight ratio. Preferably, the solution further includes an antioxidant. | 05-05-2022 |