01st week of 2012 patent applcation highlights part 39 |
Patent application number | Title | Published |
20120003802 | TRANSISTOR WITH ASYMMETRIC SILICON GERMANIUM SOURCE REGION - The present invention is directed to a transistor with an asymmetric silicon germanium source region, and various methods of making same. In one illustrative embodiment, the transistor includes a gate electrode formed above a semiconducting substrate comprised of silicon, a doped source region comprising a region of epitaxially grown silicon that is doped with germanium formed in the semiconducting substrate and a doped drain region formed in the semiconducting substrate. | 2012-01-05 |
20120003803 | Lateral Power MOSFET with High Breakdown Voltage and Low On-Resistance - A semiconductor structure includes a semiconductor substrate of a first conductivity type; a pre-high-voltage well (pre-HVW) in the semiconductor substrate, wherein the pre-HVW is of a second conductivity type opposite the first conductivity type; a high-voltage well (HVW) over the pre-HVW, wherein the HVW is of the second conductivity type; a field ring in the HVW and occupying a top portion of the HVW, wherein the field ring is of the first conductivity type; an insulation region over and in contact with the field ring and a portion of the HVW; a gate electrode partially over the insulation region; a drain region in the HVW, wherein the drain region is of the second conductivity type; and wherein the HVW horizontally extends further toward the drain region than the pre-HVW; and a source region adjacent to, and on an opposite side of the gate electrode than the drain region. | 2012-01-05 |
20120003804 | Local Charge and Work Function Engineering on MOSFET - The present disclosure provides a semiconductor device. The semiconductor device includes a semiconductor substrate having a source region and a drain region, defining a first dimension from the source to drain; and a gate stack disposed on the semiconductor substrate and partially interposed between the source region and the drain region. The gate stack includes a high k dielectric layer disposed on the semiconductor substrate; a first metal feature disposed on the high k dielectric layer, the first metal gate feature having a first work function and defining a second dimension parallel with the first dimension; and a second metal feature having a second work function different from the first work function and defining a third dimension parallel with the first dimension, the third dimension being less than the second dimension. | 2012-01-05 |
20120003805 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME - A method of fabricating a semiconductor device includes forming a device isolation region on a semiconductor substrate to define an active region, forming a gate electrode on the active region and the device isolation region across the active region, and forming at least one gate electrode opening portion in the gate electrode so as to overlap an edge portion of the active region, wherein the gate electrode opening portion is simultaneously formed with the gate electrode. | 2012-01-05 |
20120003806 | METHOD OF FABRICATING AN INTEGRATED CIRCUIT DEVICE - A method for fabricating an integrated device is disclosed. A sacrificial gate stack is provided with a line width narrower than the target width of the final gate structure. After performing a tilt-angle implantation process, L-shape spacers are formed over the sidewalls of the sacrificial gate stack, and offset spacers are formed over the sidewalls of the L-shape spacers. An insulating layer is formed over the offset spacers and the substrate. Then, the sacrificial gate stack and the L-shape spacers are removed to form a trench in the insulating layer. A metal gate is then filled in the trench to form the final gate structure. | 2012-01-05 |
20120003807 | METHOD FOR FORMING SEMICONDUCTOR REGION AND METHOD FOR MANUFACTURING POWER STORAGE DEVICE - To provide a method for manufacturing a power storage device which enables improvement in performance of the power storage device, such as an increase in discharge capacity. To provide a method for forming a semiconductor region which is used for a power storage device or the like so as to improve performance. A method for forming a crystalline semiconductor region includes the steps of: forming, over a conductive layer, a crystalline semiconductor region that includes a plurality of whiskers including a crystalline semiconductor by an LPCVD method; and performing heat treatment on the crystalline semiconductor region after supply of a source gas containing a deposition gas including silicon is stopped. A method for manufacturing a power storage device includes the step of using the crystalline semiconductor region as an active material layer of the power storage device. | 2012-01-05 |
20120003808 | SEMICONDUCTOR MEMORY DEVICE AND METHOD OF FABRICATING THE SAME - A method for fabricating semiconductor memory device, includes providing a semiconductor substrate; forming a lower region which includes a first data storage device, which is carried by the semiconductor substrate; forming a switching device which is carried by the first data storage device; and forming an upper region which includes a second data storage device, which is carried by the switching device. The step of forming the first storage device includes forming a first electrode having a cylindrical or pillar shape, the first electrode being connected to the switching device. | 2012-01-05 |
20120003809 | ISOLATION METHOD IN SEMICONDUCTOR DEVICE - The present invention discloses an isolation process in a semiconductor device. In the present invention, when a SPT process is used for isolation, ISO cut patterns for cutting spacers for SPT in the unit of a specific length are first formed, and ISO partition patterns defining partition regions for forming the spacers are then formed over the ISO cut patterns. Accordingly, there are advantages in that the SPT process can be simplified and costs can be reduced according to the simplified process because the isolation process is simplified. | 2012-01-05 |
20120003810 | SEMICONDUCTOR DEVICE HAVING REDUCED SUB-THRESHOLD LEAKAGE - A semiconductor device fabricated in the semiconductor substrate includes a FinFET transistor having opposed source and drain pillars, and a fin interposed between the source and drain pillars. A cavity is formed in the semiconductor substrate extending at least partially between the fin and the semiconductor substrate. The cavity may be formed within a shallow trench isolation structure, and it may also extend at least partially between the semiconductor substrate and one or both of the pillars. The cavities increase the impedance between the semiconductor substrate and the fin and/or pillars to decrease the sub-threshold leakage of the FinFET transistor. | 2012-01-05 |
20120003811 | METHOD FOR MANUFACTURING SEMICONDUCTOR SUBSTRATE - A first silicon carbide substrate has a first front-side surface and a first side surface. A second silicon carbide substrate has a second front-side surface and a second side surface. The second side surface is disposed such that a gap having an opening between the first and second front-side surfaces of the first and second silicon carbide substrates is disposed between the first side surface and the second side surface. A closing portion is provided to close the gap over the opening. By depositing sublimates from the first and second side surfaces onto the closing portion, a connecting portion is formed to connect the first and second side surfaces to each other so as to close the opening. After the step of forming the connecting portion, the closing portion is removed. | 2012-01-05 |
20120003812 | METHOD OF MANUFACTURING SEMICONDUCTOR SUBSTRATE - A plurality of silicon carbide substrates and a support portion are heated. A temperature of a first radiation plane facing the plurality of silicon carbide substrates in a first space extending from the plurality of silicon carbide substrates in a direction perpendicular to one plane and away from the support portion is set to a first temperature. A temperature of a second radiation plane facing the support portion in a second space extending from the support portion in a direction perpendicular to one plane and away from the plurality of silicon carbide substrates is set to a second temperature higher than the first temperature. A temperature of a third radiation plane facing the plurality of silicon carbide substrates in a third space extending from a gap among the plurality of silicon carbide substrates along one plane is set to a third temperature lower than the second temperature. | 2012-01-05 |
20120003813 | OXYGEN PLASMA CONVERSION PROCESS FOR PREPARING A SURFACE FOR BONDING - A process for preparing a surface of a material that is not bondable to make it bondable to the surface of another material. A non-bondable surface of a semiconductor wafer is treated with oxygen plasma to oxidize the surface of the wafer and make the surface smoother, hydrophilic and bondable to the surface of another substrate, such as a glass substrate. The semiconductor wafer may have a barrier layer thereon formed of a material, such as SixNy or SiNxOy that is not bondable to another substrate, such as a glass substrate. In which case, the oxygen plasma treatment converts the surface of the barrier layer to oxide, such as SiO2, smoothing the surface and making the surface hydrophilic and bondable to the surface of another substrate, such as a glass substrate. The converted oxide layer may be stripped from the barrier layer or semiconductor wafer with an acid, in order to remove contamination on the surface of the barrier layer or semiconductor wafer, the stripped surface may undergo a second oxygen plasma treatment to further smooth the surface, and make the surface hydrophilic and bondable to the surface of another substrate | 2012-01-05 |
20120003814 | Methods For In-Situ Passivation Of Silicon-On-Insulator Wafers - Methods and systems are disclosed for performing a passivation process on a silicon-on-insulator wafer in a chamber in which the wafer is cleaved. A bonded wafer pair is cleaved within the chamber to form the silicon-on-insulator (SOI) wafer. A cleaved surface of the SOI wafer is then passivated in-situ by exposing the cleaved surface to a passivating substance. This exposure to a passivating substance results in the formation of a thin layer of oxide on the cleaved surface. The silicon-on-insulator wafer is then removed from the chamber. In other embodiments, the silicon-on-insulator wafer is first transferred to an adjoining chamber where the wafer is then passivated. The wafer is transferred to the adjoining chamber without exposing the wafer to the atmosphere outside the chambers. | 2012-01-05 |
20120003815 | SEMICONDUCTOR STRUCTURE AND METHOD OF FABRICATING THE SAME - A method of fabricating a semiconductor substrate includes providing a first semiconductor substrate, which includes a detaching layer spaced from an upper surface of the first semiconductor substrate; forming an ion-implanted layer proximate to an edge of the detaching layer; bonding a second semiconductor substrate to the first semiconductor substrate; forming a crack in the ion-implanted layer in response to applying stress to the ion-implanted layer; and detaching a portion of the first semiconductor substrate in response to cleaving through the crack. | 2012-01-05 |
20120003816 | WAFER DIVIDING METHOD - A method of dividing a wafer having devices formed in a plurality of regions demarcated by a plurality of streets formed in a grid pattern on a surface of the wafer, along the streets and into the individual devices. The wafer dividing method includes the steps of: forming grooves from the face side of the wafer along the streets and in a depth corresponding to the finished thickness of the devices; coating the surface of the wafer with an acrylic liquid resin curable by irradiation with UV rays to fill the grooves with the acrylic liquid resin and disposing a protective film on the acrylic liquid resin; performing irradiation with UV rays from the protective film side so as to cure the acrylic liquid resin; grinding the back side of the wafer so as to expose the grooves on the back side and divide the wafer into the individual devices; adhering the back side of the wafer to a surface of an adhesive tape adhered to an annular frame; and peeling the acrylic resin from the surface of the wafer together with the protective film. | 2012-01-05 |
20120003817 | INTEGRATED CIRCUIT WAFER DICING METHOD - An integrated circuit wafer dicing method is provided. The method includes forming a plurality of integrated circuits and a plurality of test-keys on a wafer substrate, wherein the plurality of test-keys are disposed between the adjacent integrated circuits; forming a patterned protective film on the wafer to cover the plurality of integrated circuits and expose the plurality of test-keys; etching the plurality of test-keys by using the patterned protective film as a mask; and dicing an area between the plurality of integrated circuits to form a plurality of discrete integrated circuit dies. | 2012-01-05 |
20120003818 | Field Effect Resistor for ESD Protection - An electrostatic discharge protection device and methodology are provided for protecting semiconductor devices against electrostatic discharge events by temporarily forming during normal (non-ESD) operation two more inversion layers ( | 2012-01-05 |
20120003819 | Methods and apparatus for selective epitaxy of si-containing materials and substitutionally doped crystalline si-containing material - The present invention discloses that under modified chemical vapor deposition (mCVD) conditions an epitaxial silicon film may be formed by exposing a substrate contained within a chamber to a relatively high carrier gas flow rate in combination with a relatively low silicon precursor flow rate at a temperature of less than about 550° C. and a pressure in the range of about 10 mTorr-200 Torr. Furthermore, the crystalline Si may be in situ doped to contain relatively high levels of substitutional carbon by carrying out the deposition at a relatively high flow rate using tetrasilane as a silicon source and a carbon-containing gas such as dodecalmethylcyclohexasilane or tetramethyldisilane under modified CVD conditions. | 2012-01-05 |
20120003820 | METHOD FOR FABRICATING SEMICONDUCTOR DEVICE - A method for fabricating a semiconductor device includes forming an AlN layer on a substrate made of silicon by supplying an Al source without supplying a N source and then supplying both the Al source and the N source, and forming a GaN-based semiconductor layer on the AlN layer after the forming of the AlN layer. The forming of the AlN layer grows the AlN layer so as to satisfy the following: | 2012-01-05 |
20120003821 | METHOD FOR FABRICATING SEMICONDUCTOR DEVICE - A method for fabricating a semiconductor device includes performing thermal cleaning for a surface of a silicon substrate in an atmosphere including hydrogen under a condition that a thermal cleaning temperature is higher than or equal to 700° C. and is lower than or equal to 1060° C., and a thermal cleaning time is longer than or equal to 5 minutes and is shorter than or equal to 15 minutes; forming a first AlN layer on the substrate with a first V/III source ratio, the forming of the first AlN layer including supplying an Al source to the surface of the substrate without supplying a N source, and supplying both the Al source and the N source; forming a second AlN layer on the first AlN layer with a second V/III source ratio that is greater than the first ratio; and forming a GaN-based semiconductor layer on the second AlN layer. | 2012-01-05 |
20120003822 | Wafer Guide, MOCVD Equipment, and Nitride Semiconductor Growth Method - Wafer guide for MOCVD equipment that reduces influence from III-nitride deposits. A wafer support ( | 2012-01-05 |
20120003823 | METHOD FOR MANUFACTURING SEMICONDUCTOR SUBSTRATE - A combined substrate is prepared which has a supporting portion and first and second silicon carbide substrates. The first silicon carbide substrate has a first front-side surface and a first side surface. The second silicon carbide substrate has a second front-side surface and a second side surface. The second side surface is disposed such that a gap having an opening between the first and second front-side surfaces is formed between the first side surface and the second side surface. By introducing melted silicon from the opening into the gap, a silicon connecting portion is formed to connect the first and second side surfaces so as to close the opening. By carbonizing the silicon connecting portion, a silicon carbide connecting portion is formed. | 2012-01-05 |
20120003824 | METHOD FOR MANUFACTURING GALLIUM NITRIDE WAFER - A method for manufacturing a gallium nitride (GaN) wafer is provided. In the method for manufacturing the GaN wafer according to an embodiment, an etch stop layer is formed on a substrate, and a first GaN layer is formed on the etch stop layer. A portion of the first GaN layer is etched with a silane gas, and a second GaN layer is formed on the etched first GaN layer. A third GaN layer is formed on the second GaN layer. | 2012-01-05 |
20120003825 | METHOD OF FORMING STRAINED EPITAXIAL CARBON-DOPED SILICON FILMS - A method for forming strained epitaxial carbon-doped silicon (Si) films, for example as raised source and drain regions for electronic devices. The method includes providing a structure having an epitaxial Si surface and a patterned film, non-selectively depositing a carbon-doped Si film onto the structure, the carbon-doped Si film containing an epitaxial carbon-doped Si film deposited onto the epitaxial Si surface and a non-epitaxial carbon-doped Si film deposited onto the patterned film, and non-selectively depositing a Si film on the carbon-doped Si film, the Si film containing an epitaxial Si film deposited onto the epitaxial carbon-doped Si film and a non-epitaxial Si film deposited onto the non-epitaxial carbon-doped Si film. The method further includes dry etching away the non-epitaxial Si film, the non-epitaxial carbon-doped Si film, and less than the entire epitaxial Si film to form a strained epitaxial carbon-doped Si film on the epitaxial Si surface. | 2012-01-05 |
20120003826 | METHODS AND COMPOSITIONS FOR DOPING SILICON SUBSTRATES WITH MOLECULAR MONOLAYERS - Compositions and methods for doping silicon substrates by treating the substrate with a diluted dopant solution comprising tetraethylene glycol dimethyl ether (tetraglyme) and a dopant-containing material and subsequently diffusing the dopant into the surface by rapid thermal annealing. Diethyl-1-propylphosphonate and allylboronic acid pinacol ester are preferred dopant-containing materials, and are preferably included in the diluted dopant solution in an amount ranging from about 1% to about 20%, with a dopant amount of 4% or less being more preferred. | 2012-01-05 |
20120003827 | METHOD FOR MANUFACTURING METAL GATE STACK STRUCTURE IN GATE-FIRST PROCESS - A method for manufacturing a metal gate stack structure in gate-first process comprises the following steps after making conventional LOCOS and STI isolations: growing an untra-thin interface layer of oxide or oxynitride on a semiconductor substrate by rapid thermal oxidation or chemical process; depositing a high dielectric constant (K) gate dielectric on the untra-thin interface oxide layer and then performing rapid thermal annealing; depositing a TiN metal gate; depositing a barrier layer of AlN or TaN; depositing a poly-silicon film and a hard mask, and performing photo-lithography and the etching of the hard mask; after photo-resist removing, etching the poly-silicon film/metal gate/high-K gate dielectric sequentially to form the metal gate stack structure. The manufacturing method of the present invention is suitable for integration of high-K dielectric/metal gate in nano-scale CMOS devices, and removes obstacles of implementing high-K/metal gate integration. | 2012-01-05 |
20120003828 | SEMICONDUCTOR MEMORY DEVICE AND METHOD OF FORMING THE SAME - A method of manufacturing a semiconductor device includes forming a laminated structure including sacrificial layers and a select gate layer on a substrate, forming a penetration region penetrating the laminated structure, forming a select gate insulating layer on a sidewall of the select gate layer exposed by the penetration region, and forming an active pattern in the penetration region. The method also includes exposing a portion of the active pattern by removing the sacrificial layers and forming an information storage layer on the exposed portion of the active pattern. | 2012-01-05 |
20120003829 | METHOD OF FABRICATING SEMICONDUCTOR DEVICE - A method of fabricating a semiconductor device includes forming a bottom electrode material layer containing aluminum and cupper over the substrate. An insulating material layer and a top electrode material layer are sequentially formed on the surface of the bottom electrode material layer. A photoresist pattern is formed on the top electrode material layer, and then the top electrode material layer is patterned to form a top electrode by using the photoresist pattern as mask. The photoresist pattern is removed by plasma ash and then an alloy process is performed to the bottom electrode material layer. Thereafter, the insulating material layer, and the bottom electrode material layer are patterned to form a patterned insulating layer and a patterned bottom electrode layer. | 2012-01-05 |
20120003830 | METHOD FOR MANUFACTURE OF INTEGRATED CIRCUIT PACKAGE SYSTEM WITH PROTECTED CONDUCTIVE LAYERS FOR PADS - A method for manufacture of an integrated circuit package system includes: providing an integrated circuit die having a contact pad; forming a protection cover over the contact pad; forming a passivation layer having a first opening over the protection cover with the first opening exposing the protection cover; developing a conductive layer over the passivation layer; forming a pad opening in the protection cover for exposing the contact pad having the conductive layer partially removed; and an interconnect directly on the contact pad and only adjacent to the protection cover and the passivation layer. | 2012-01-05 |
20120003831 | Methods of Forming Nonvolatile Memory Devices Using Nonselective and Selective Etching Techniques to Define Vertically Stacked Word Lines - Methods of forming nonvolatile memory devices include forming a stack of layers of different materials on a substrate. This stack includes a plurality of first layers of a first material and a plurality of second layers of a second material arranged in an alternating sequence of first and second layers. A selected first portion of the stack of layers is isotropically etched for a sufficient duration to define a first trench therein that exposes sidewalls of the alternating sequence of first and second layers. The sidewalls of each of the plurality of first layers are selectively etched relative to sidewalls of adjacent ones of the plurality of second layers. Another etching step is then performed to recess sidewalls of the plurality of second layers and thereby expose portions of upper surfaces of the plurality of first layers. These exposed portions of the upper surfaces of the plurality of first layers, which may act as word lines of a memory device, are displaced laterally relative to each other. | 2012-01-05 |
20120003832 | METHOD OF REDUCING EROSION OF A METAL CAP LAYER DURING VIA PATTERNING IN SEMICONDUCTOR DEVICES - During the patterning of via openings in sophisticated metallization systems of semiconductor devices, the opening may extend through a conductive cap layer and an appropriate ion bombardment may be established to redistribute material of the underlying metal region to exposed sidewall portions of the conductive cap layer, thereby establishing a protective material. Consequently, in a subsequent wet chemical etch process, the probability for undue material removal of the conductive cap layer may be greatly reduced. | 2012-01-05 |
20120003833 | METHODS FOR FORMING TUNGSTEN-CONTAINING LAYERS - Methods for forming tungsten-containing layers on substrates are provided herein. In some embodiments, a method for forming a tungsten-containing layer on a substrate disposed in a process chamber may include mixing hydrogen and a hydride to form a first process gas; introducing the first process gas to the process chamber; exposing the substrate in the process chamber to the first process gas for a first period of time to form a conditioned substrate surface; subsequently purging the process chamber of the first process gas; exposing the substrate to a second process gas comprising a tungsten precursor for a second period of time to form a tungsten-containing nucleation layer atop the conditioned substrate surface; and subsequently purging the process chamber of the second process gas. | 2012-01-05 |
20120003834 | Method Of Polishing Chalcogenide Alloy - The invention provides a method for chemical mechanical polishing of a substrate. The invention comprises providing a substrate, wherein the substrate comprises a chalcogenide phase change alloy and providing a chemical mechanical polishing composition, wherein the chemical mechanical polishing composition comprises, by weight percent, water, 0.1 to 30 abrasive, at least one polishing agent selected from 0.05 to 5 halogen compound, 0.05 to 5 phthalic acid, 0.05 to 5 phthalic anhydride and salts, derivatives and mixtures thereof and wherein the chemical mechanical polishing composition has a pH of 2 to less than 7. A chemical mechanical polishing pad polishes the substrate with the chemical mechanical polishing pad and the chemical mechanical polishing composition to selectively or non-selectively remove the chalcogenide phase change alloy from the substrate. | 2012-01-05 |
20120003835 | METHOD OF ETCHING SACRIFICIAL LAYER - An exemplary method of etching sacrificial layer includes steps of: providing a substrate formed with a sacrificial layer and defined with a first region and a second region, the sacrificial layer disposed in both the first and second regions; forming a hard mask covering the first region while exposing the second region; performing a first etching process on the sacrificial layer to thin the sacrificial layer while forming a byproduct film overlying the thinned sacrificial layer; performing a second etching process on the byproduct film to remove a portion of the byproduct layer for exposing a portion of the thinned sacrificial layer, while another portion of the byproduct film disposed on sidewalls of the thinned sacrificial layer being remained; and performing a third etching process on the thinned sacrificial layer, to remove the portion of the thinned sacrificial layer exposed in the second etching process. | 2012-01-05 |
20120003836 | MOVABLE GROUND RING FOR A PLASMA PROCESSING CHAMBER - A movable ground ring of a movable substrate support assembly is described. The movable ground ring is configured to fit around and provide an RF return path to a fixed ground ring of the movable substrate support assembly in an adjustable gap capacitively-coupled plasma processing chamber wherein a semiconductor substrate supported in the substrate support assembly undergoes plasma processing. | 2012-01-05 |
20120003837 | Semiconductor Device Manufacturing Apparatus Capable Of Reducing Particle Contamination - A plasma processing method of subjecting a substance to plasma processing by using a semiconductor device manufacturing apparatus including a process chamber, a unit for supplying gas to the process chamber, an exhausting unit to reduce pressure in the process chamber, a high frequency power source for plasma generation, a coil for generating a magnetic field, and a mounted electrode for mounting the substance to be processed. The method includes steps of subjecting the substance to a predetermined plasma processing, changing the magnetic field distribution, so as to make a plasma distribution of the process chamber with respect to the surface of the substance to be processed, in a convex form, at a time of igniting the plasma and after completion of the predetermined plasma processing, as compared with a plasma distribution with respect to the surface of the substance to be processed during the predetermined plasma processing. | 2012-01-05 |
20120003838 | PLASMA ETCHING METHOD - Line-wiggling and striation caused by collapse of a pattern after a silicon dioxide film is etched by plasma with the use of a multilayer resist mask are prevented or suppressed. In a plasma etching method of etching a film to be etched by plasma with the use of a multilayer resist mask, the multilayer resist mask includes an upper layer resist, an inorganic intermediate film, and a lower layer resist, and the method includes a side wall protective film forming step of forming a side wall protective film on a side wall of the lower layer resist. | 2012-01-05 |
20120003839 | CHEMICAL TREATMENT METHOD - A chemical treatment apparatus and a method for performing a chemical treatment of a wafer, etc., by supplying a chemical via a cell. The apparatus includes a cylindrical inner cell and a cylindrical outer cell with open ends disposed at an outer circumference of the inner cell. The outer cell is axially movable to vary the width of a slit formed between a bottom end of the outer cell and a top surface of the substrate-holding means by the axial movement, thereby adjusting the discharge rate of the chemical and varying the pressure of the chemical. | 2012-01-05 |
20120003840 | IN-SITU OZONE CURE FOR RADICAL-COMPONENT CVD - Methods of forming a dielectric layer are described. The methods include the steps of mixing a silicon-containing precursor with a plasma effluent, and depositing a silicon-and-nitrogen-containing layer on a substrate. The silicon-and-nitrogen-containing layer is converted to a silicon-and-oxygen-containing layer by curing in an ozone-containing atmosphere in the same substrate processing region used for depositing the silicon-and-nitrogen-containing layer. Another silicon-and-nitrogen-containing layer may be deposited on the silicon-and-oxygen-containing layer and the stack of layers may again be cured in ozone all without removing the substrate from the substrate processing region. After an integral multiple of dep-cure cycles, the conversion of the stack of silicon-and-oxygen-containing layers may be annealed at a higher temperature in an oxygen-containing environment. | 2012-01-05 |
20120003841 | METHOD OF PRODUCING SEMICONDUCTOR DEVICE - A method of manufacturing a semiconductor device includes: a step of forming a porous dielectric film on a substrate; a step of disposing the substrate having the porous dielectric film formed thereon inside a chamber; a step of introducing siloxane into the chamber in which the substrate is disposed and heating the substrate to a first temperature; and a step heating the substrate to which the introduced siloxane adheres to a second temperature higher than the first temperature. A pressure inside the chamber is maintained to be equal to or lower than 1 kPa. In the present embodiment, the first temperature is equal to or higher than a temperature at which the pressure inside the chamber is a saturated vapor pressure of the siloxane, and is equal to or lower than a temperature at which a polymerization between the porous dielectric film and the siloxane starts. | 2012-01-05 |
20120003842 | METHOD FOR FORMING SILICON OXIDE FILM AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE - There is provided a silicon oxide film forming method including forming a silicon oxide film on a processing target substrate W by supplying a silicon compound gas, an oxidizing gas and a rare gas into a processing chamber | 2012-01-05 |
20120003843 | CONNECTOR - A connector which is capable of accommodating displacement between objects to be connected, and prevents an operation force required in connecting the connector and the objects and the amount of deformation of the contacts from becoming too large. A plurality of contacts are each provided with contact portions which sandwich a plate-shaped contact portion of a contact (first object to be connected) in a manner capable of relatively pivoting in a direction of thickness thereof, and contact portions which sandwich a plate-shaped contact portion of a contact (second object to be connected) in a manner capable of relatively pivoting in a direction of thickness thereof. The contacts are accommodated in a contact-accommodating hole of a housing in a manner capable of pivoting in the direction of the thickness of each of the contact portions of the first and second objects to be connected. | 2012-01-05 |
20120003844 | SYSTEMS AND METHODS OF MANUFACTURING PRINTED CIRCUIT BOARDS USING BLIND AND INTERNAL MICRO VIAS TO COUPLE SUBASSEMBLIES - Systems and methods of manufacturing printed circuit boards using blind and internal micro vias to couple subassemblies. An embodiment of the invention provides a method of manufacturing a printed circuit including attaching a plurality of metal layer carriers to form a first subassembly including at least one copper foil pad on a first surface, applying an encapsulation material onto the first surface of the first subassembly, curing the encapsulation material and the first subassembly; applying a lamination adhesive to a surface of the cured encapsulation material, forming at least one via in the lamination adhesive and the cured encapsulation material to expose the at least one copper foil pad, attaching a plurality of metal layer carriers to form a second subassembly, and attaching the first subassembly and the second subassembly. | 2012-01-05 |
20120003845 | SPLIT RING TERMINAL ASSEMBLY - A connector assembly configured to electrically connect a first substrate with a second substrate is provided. The connector assembly includes an insulating support member including an array of apertures, and terminal assemblies disposed in the apertures. Each terminal assembly includes a hollow cylindrical body, and first and second terminals disposed on opposed ends of the body. The body is split by an opening extending between opposed ends, and resiliency of the body biases the first and second terminals in opposed directions along the longitudinal axis. | 2012-01-05 |
20120003846 | ELECTRICAL CONNECTOR ASSEMBLY HAVING ELECTRICAL CONNECTOR WITH LOW PROFILE AND PROCESSOR WITH CONE PINS - An electrical connector assembly ( | 2012-01-05 |
20120003847 | CONNECTOR FOR INTERCONNECTING CONDUCTORS OF CIRCUIT BOARDS - A connector comprises a generally cylindrical dielectric body with a central bore in the dielectric body. The dielectric body has a first end and second end opposite the first end. Conductors extend axially through the cylindrical dielectric body and are spaced apart from each other in a generally circular or elliptical arrangement. Each conductor comprises an embedded portion in the dielectric body and mating portions extending from the first end and the second end. | 2012-01-05 |
20120003848 | HIGH DATA RATE CONNECTOR SYSTEM - A connector and circuit board assembly includes terminals in a connector that are mounted to vias in a circuit board. Signal and ground terminals are thus coupled to signal traces and ground planes in the circuit board. Additional pinning vias that are aligned with the ground vias may be provided in a circuit board to help improve electrical performance at the interface between the terminals in the connector and the signal traces in the circuit board. A signal collar may allow pairs of signal traces to be split and routed around two difference sides of a via before rejoining while maintaining close electrical proximity that provides for relatively consistent electrical coupling between the traces in the pair of signal traces. | 2012-01-05 |
20120003849 | ELECTRICAL CONNECTOR CONNECTING TWO BOARD SHAPED DEVICE - An electrical connector includes a lengthwise insulating housing defining a central axis along a lengthwise direction and two groups of terminals disposed in the base portion. The housing includes a base portion and two mounting portions at opposite ends of the base portion. Each conductive terminal includes a retaining portion retained in the base portion, and a first and a second contacting portion extending oppositely from the retaining portion. The two groups of terminals are located at two sides of the central axis and the first contacting portions expose to a first surface of the base portion and the second contacting portions expose to a second surface opposite to the first surface of the base portion. | 2012-01-05 |
20120003850 | INSULATION DISPLACEMENT CONNECTOR (IDC) - An electrical insulation displacement connector includes a bare single-wire contact element having a first end defined by opposed blades that define a receipt aperture for an insulated wire, and a second end configured for direct electrical contact at a contact position on a printed circuit board. Retaining structure is defined on the blades. A cap is configured for fitting over the exposed bare blades. The cap includes side walls and end walls with a slot defined in each of he end walls that align with the blade aperture. The side walls are engaged by the retaining structure upon pressing the cap onto the blades. The slots in the end walls of the cap have a width and height such that upon fully pressing the cap onto the blades, the slots engage and longitudinally align the insulated wire into the blade aperture so that the blades pierce and make electrical contact with a core in the insulated wire. | 2012-01-05 |
20120003851 | Sheet-Like Connector And Manufacturing Method Thereof - The sheet-like connector comprises a plurality of conductive members formed on one side of sheet. Each of the conductive members comprises elastically deformable spring member wherein edge thereof moves in the thickness direction of sheet, middle member which is formed on edge of spring member, and contacting protrusion which is formed on middle member and which protrudes in the thickness direction of sheet. Middle member and contacting protrusion are formed with materials which are mutually different and thus enable selective etching. | 2012-01-05 |
20120003852 | MULTI-INTERFACES CONNECTOR - A multi-interfaces connector includes a plurality of housings, a circuit board and a casing. The circuit board has a soldering portion, and the circuit board has a plurality of tongue plates extended from one side of the soldering portion. The tongue plates are separately arranged through the plurality of housings. The tongue plates respectively have a plurality of first conductive pins, a plurality of second conductive pins and a plurality of third conductive pins. The casing has a hollow case body which includes a plurality of through holes. The plurality of housings are arranged with the circuit board and installed in the casing. Therefore, the multi-interfaces connector is capable of being inserted with several transmission lines which have different types of insertion plug. | 2012-01-05 |
20120003853 | CARD CONNECTOR - A card connector comprises a housing, connection terminals, a card guide mechanism and a cover member. The housing is configured to accommodate therein a card which is provided with terminal members. The connection terminals are mounted in the housing and configured to be capable of coming into contact with the terminal members of the card. The card guide mechanism is provided with a slide member configured to slide while holding the card inserted into the housing, and an urging member configured to urge the slide member in a direction opposite to an insertion direction of the card. The cover member mounted on the housing and configured to cover at least the slide member and a portion of the card inserted into the housing. | 2012-01-05 |
20120003854 | USB CONNECTOR STRUCTURE - A USB connector structure for connecting an electronic device to a computer includes a cable, a first plug group and a second plug group. The first plug group and the second plug group are connected to opposite ends of the cable. The first plug group includes a first standard USB plug and a first mini USB plug electrically connected to the first standard USB plug. The second plug group is connected to another end of the cable, and includes a second standard USB plug and a second mini USB plug electrically connected to the second standard USB plug. Any two of the first standard USB plugs, the first mini USB plug, the second standard USB plug and the second mini USB plug can be respectively electrically connected with the electronic device and the computer. | 2012-01-05 |
20120003855 | COUPLING ARRANGEMENT - The invention relates to a coupling arrangement ( | 2012-01-05 |
20120003856 | WATERPROOF STRUCTURE - A waterproof structure, which is for one connector fixed to a mounting hole of an automotive motor's metallic case and another connector fixed to a mounting hole of an automotive inverter's metallic case and connected to the one connector, comprises ring-shaped first and second packings. The first packing resides between the one case's surface and the one connector's surface that are orthogonal to a fitting direction of the connectors such that the one case's mounting hole is surrounded thereby to provide waterproof interface between the one case and the one connector. The second packing resides between the other case's surface and the other connector's surface that are parallel to the fitting direction. The second packing extends on an outer circumferential surface of the other connector to provide waterproof interface between an inner circumferential surface of the other case's mounting hole and the other connector's outer circumferential surface. | 2012-01-05 |
20120003857 | CONNECTOR ASSEMBLY - A connector assembly comprises a first connector and a second connector. The first connector is configured to be mounted on a connection object. The first connector includes a first contact and a first holding member. The first holding member holds the first contact. The second connector is configured to be engaged with the first connector along a downward direction in a state where the first connector is positioned below the second connector. The second connector includes a second contact, a second holding member and an operated portion. The second holding member holds the second contact. The second contact is configured to be connected to the first contact under an engaged state where the second connector is engaged with the first connector. The operating portion is held by the second holding member so that a positional relation between the operating portion and the second holding member is kept when a force is applied to the operating portion along a upward direction and when a force is applied to the operating portion along a first horizontal direction perpendicular to the upward direction or a second horizontal direction opposite to the first horizontal direction. The second connector is removable from the first connector when a force is applied to the operating portion either along the upward direction or along the first horizontal direction or the second horizontal under the engaged state. | 2012-01-05 |
20120003858 | CONNECTOR - Connector including a connector housing and at least one resilient lock lever supported by the connector housing. The lever has a flexible free end including a locking cam projecting out of the housing. A release member, such as a sliding cover, is moveable between a locking position and a release position, the release member being provided with a pressure surface for engaging a section of the lever when the release member is moved to the release position. A resilient member biases the release member to the locking position. The lock lever can for example be a leaf spring. | 2012-01-05 |
20120003859 | CONNECTOR SET AND JOINTER FOR USE THEREIN - A connector set includes at least one of a header and a socket and a jointer. The jointer extends in a direction and is configured to couple the header and the socket so as to be in parallel with each other. The jointer includes first jointer connecting portions provided at both end portions thereof and extending in a second direction perpendicular to the first direction, and which are configured to engage first connecting portions provided at both end portions of the header, and second jointer connecting portions provided at both end portions of the jointer body and extending in a third direction opposite to the second direction, and which are configured to engage the second connecting portions provided at both end portions of the socket. | 2012-01-05 |
20120003860 | ELECTRICAL CONNECTOR - The invention relates to a connector with a housing, with terminals, with conductors that are connected with the terminals, with a guidance element that is arranged in the housing and that guides the conductors in the housing, with an elastic element that is arranged between the conductors and the guidance element, with a retainer element that forces the conductors against the elastic element. | 2012-01-05 |
20120003861 | CONNECTOR ASSEMBLY FOR VEHICLE CHARGING - A connector assembly is provided with a support structure having an elongate shape and an inlet for receiving a charging cable. A fitting is disposed in mechanical interlocking engagement with a distal end of the support structure for interconnecting the support structure with a vehicle charging receptacle. The support structure and the fitting are configured for disconnecting from each other when the connector assembly is subjected to a lateral load above a predetermined threshold value. | 2012-01-05 |
20120003862 | INTEGRATED ELECTRODE CONNECTOR AND IMPEDANCE INDICATOR - The present invention provides an integrated electrode connector and impedance indicator apparatus comprising of an electrode connector, an impedance indicator means; and a light-transmitting housing. The impedance indicator may be located in a recess in the housing. Preferably the impedance indicator means is an LED. Preferably the impedance indicator emits light when the impedance is outside of an operational range. The apparatus is suited for applications such as indicating the status of EEG electrodes. | 2012-01-05 |
20120003863 | DETECTION OF CABLE CONNECTIONS FOR ELECTRONIC DEVICES - Embodiments of the invention are generally directed to detection of cable connections for electronic devices. An embodiment of an apparatus includes a port for the connection of a cable, the port being compatible with a first protocol and a second protocol, the port including a connector for the second protocol, the port including multiple pins including a first pin and a second pin. The apparatus further includes a pull-up resistor coupled between the first pin and a voltage source, a pull-down resistor coupled between the second pin and ground, and a voltage detection element coupled with the second pin. The apparatus is to determine that a cable compatible with the first protocol is connected to the port if the voltage detection element detects a voltage above a first threshold. | 2012-01-05 |
20120003864 | ELECTRICAL CONNECTING APPARATUS AND CONTACTS USED THEREFOR - An electrical connecting apparatus | 2012-01-05 |
20120003865 | JUMPER - A jumper includes a casing, and two conductive members. The casing defines a first receiving space in a first end, and a second and a third receiving spaces in a second end opposite to the first end. The conductive members are received in the first receiving space. | 2012-01-05 |
20120003866 | CONNECTOR - A connector has a mating portion matable with a mating connector. The connector is provided with a plurality of contacts and a holder member holding the plurality of contacts arrayed in a pitch direction. The mating portion has an upper surface, a lower surface, and a tip potion. Each of the plurality of contacts includes a contacting part and a folded part. The contacting part is exposed on the upper surface of the mating portion. The contacting part extends frontward and has a front end. The front end is exposed on the tip potion of the mating portion. The folded part is folded backward from the front end of the contacting part and has a rear end as an embedment part. The holder member has a plate portion defining an external shape of the mating portion. The embedment part is embedded in the plate portion. | 2012-01-05 |
20120003867 | CONNECTOR PORT - A connector port provided on the outer surface of a housing of an electronic device includes: a connector holding section that is formed in the housing and has a connector opening; and an opening/closing cover including an attaching section that is screwed to the connector holding section, a flat cover section that is pivotably supported by the attaching section at the proximal end thereof and opens and closes the connector opening, and an elastically deforming section that is provided at the distal end of the cover section and elastically deforms to engage in the connector holding section. The connector holding section is formed as a recess on the outer surface of the housing, the opening/closing cover is housed in the recess, and the outer surface of the housing and the outer surface of the cover section are substantially flush with each other. | 2012-01-05 |
20120003868 | ELECTRICAL CONNECTION SYSTEM THAT ABSORBS MULTI-CONNECTOR POSITIONAL MATING TOLERENCE VARIATION - A ganged electrical connection system includes an arrangement defining a plurality of receptacles. A plurality of first connectors is receivably coupled in the plurality of receptacles. A plurality of second connectors is matable to the plurality of coupled first connectors of the arrangement along mating axes. Positional mating tolerance variation associated with the plurality of second connectors in relation to the plurality of coupled first connectors manifested at the plurality of receptacles when the plurality of second connectors are mated to the plurality of coupled first connectors is absorbed by the arrangement. The plurality of the plurality of second connectors mate with the plurality of coupled first connectors in a single unimpeded, uninterrupted mating connection. A ganged electrical system for an electric-type vehicle is also presented. | 2012-01-05 |
20120003869 | COAXIAL CABLE CONNECTOR SLEEVE - An adapter sleeve for a coaxial cable connector having a nut member including a retaining structure on an external surface of the nut member, said adapter sleeve comprising a cylindrical body comprising a first end and a second end defining a bore along a longitudinal axis therethrough, the bore defining an interior surface, the interior surface having a torque transmission feature sized to slideably engage the nut member on the coaxial cable connector, the cylindrical body having at least one recessed portion, wherein the recessed portion is dimensioned and adapted to mate with the retaining structure on the external surface of the nut member is provided. An associated connector assembly and method is also provided. | 2012-01-05 |
20120003870 | PHONE PLUG CONNECTOR DEVICE - A phone plug connector device having a preassembled three conductive phone plug and connector, wherein the phone plug includes a conductive tip and a stem, wherein the connector connects the phone plug to a triaxial cable, wherein the triaxial cable comprises a center conductor surrounded by a first dielectric, the first dielectric being surrounded by a first conductive sheath, and the first conductive sheath surrounded by a protective outer jacket, wherein the connector connects the triaxial cable to the phone plug mechanically and electrically by compression. | 2012-01-05 |
20120003871 | ELECTRICAL CONNECTOR FOR AN ELECTRONIC MODULE - An electrical connector is provided for electrically connecting an electronic module to an electrical component. The electrical connector includes an insulator having a module side and an opposite component side. The insulator is configured to extend between the electronic module and the electrical component such that the module side faces the electronic module and the component side faces the electrical component. Electrical contacts are held by the insulator. The electrical contacts include mating segments arranged in an array along the module side of the insulator. The mating segments are configured to mate with mating contacts of the electronic module. The electrical connector further includes a shield having a body that is at least partially electrically conductive. The body of the shield is mounted on the insulator such that the body covers at least a portion of the module side of the insulator. The body of the shield includes an opening defined by at least one interior wall of the body. The opening receives the mating segment of at least one of the electrical contacts therein such that the at least one interior wall extends at least partially around the mating segment of the at least one electrical contact. | 2012-01-05 |
20120003872 | ELECTRICAL CONNECTOR HAVING REDUCED NUMBER OF SHIELDS - An electrical connector ( | 2012-01-05 |
20120003873 | CIRCUIT BOARD MOUNTED CONNECTOR - A circuit board mounted connector includes an exterior shield shell and a housing assembly. The exterior shield shell has a first face to be mounted on a circuit board to define an electromagnetic shielding space and a second face which is orthogonal to the first face and is opened for installation of a mating connector. The housing assembly is fitted in the exterior shield shell so that the mating connector is connected thereto. The housing assembly includes a connecting terminal member, an interior housing, an interior shield shell, and an exterior housing. The exterior shield shell includes an assembly mounting opening through which the housing assembly is installed into the exterior shield shell, in the first face of the exterior shield shell. | 2012-01-05 |
20120003874 | Connecting Hardware with Multi-Stage Inductive and Capacitive Crosstalk Compensation - A connector and method of crosstalk compensation within a connector is disclosed. The method includes determining an uncompensated crosstalk, including an uncompensated capacitive crosstalk and an uncompensated inductive crosstalk, of a wired pair in a connector. The uncompensated crosstalk includes common mode and differential mode crosstalk. The method includes applying at least one inductive element to the wired pair, where the at least one inductive element is configured and arranged to provide balanced compensation for the inductive crosstalk caused by the one or more pairs. The method further includes applying at least one capacitive element to the wired pair, where the at least one capacitive element is configured and arranged to provide balanced compensation for the capacitive crosstalk caused by the one or more wired pairs. | 2012-01-05 |
20120003875 | CONNECTOR - A connector having a plug connector and a receptacle connector, one of which includes a first fixed insulator, first contacts aligned in a first direction orthogonal to a connecting/disconnecting direction and each including a first resiliently deformable portion deformable in a second direction orthogonal to the connecting/disconnecting direction and the first direction, a first movable insulator supported by the first contacts, and partition walls on the first fixed insulator and/or the first movable insulator. The other of the plug connector and the receptacle connector includes a second fixed insulator, second contacts aligned in the first direction, each including a second resiliently deformable portion deformable in the first direction and contactable with one first contact, and a second movable insulator supported by the second contacts and engaged with the first movable insulator when the first and second contacts come in contact with each other. | 2012-01-05 |
20120003876 | HDMI CONNECTOR - A HDMI connector includes a metallic housing having two plates respectively extending downward from two opposite sides thereof, an insulated body mounted in the metallic housing, and a plurality of electrically conducting pins installed with the insulated body. The metallic housing has two legs each located in front of a respective one of the plates, each leg being integrally formed by cutting a portion of the metallic housing and bending the portion downward. Each leg has a base portion and a solder portion extending from the base portion to be electrically connected to a printed circuit board. The HDMI connector can save material in manufacturing and increase space availability. | 2012-01-05 |
20120003877 | COMMUNICATION ASSEMBLY COMPRISING A PLUG CONNECTOR AND A JACK ASSEMBLY PROVIDED TO BE CONNECTED - A communication assembly has a plug connector ( | 2012-01-05 |
20120003878 | MODULAR CONNECTOR FOR ELECTRIC CONNECTIONS - Modular connector for electrical connections, provided with an external anchoring system which facilitates the grouping and fixing of several connectors through male and female couplings, both laterally and transversally. For first-sight recognition, the wraparound insulating carcasses ( | 2012-01-05 |
20120003879 | ELECTRICAL CONNECTOR FOR AN ELECTRONIC MODULE - An electrical connector is provided for electrically connecting an electronic module to an electrical component. The electrical connector includes electrical contacts having mounting bases that are initially mechanically connected together by a connection strip. The connection strip extends along a connection path from the mounting base of one of the electrical contacts to the mounting base of the other electrical contact. The connection strip is broken along the connection path such that the electrical contacts are separated from each other. The electrical connector also includes a insulator having a module side and an opposite component side. The mounting bases of the electrical contacts are mechanically connected to the insulator on the module side of the insulator. The insulator includes a punch opening that extends into the module side of the insulator. The punch opening is aligned with the connection path of the connection strip and is configured to receive a punch tool for breaking the connection strip. | 2012-01-05 |
20120003880 | STAMPED ELECTRICAL TERMINAL - An electrical terminal operable to facilitate electrical connectivity between the terminal and an electrical connector. The electrical terminal may include a conducting element, such as but not limited to a coil spring, within a open end used to connect to an electrically conducting connector. The conducting element may facilitate electrical connectivity between the inserted connector and the terminal. | 2012-01-05 |
20120003881 | MINIATURE RECEPTACLE TERMINALS - This approach generally pertains to a miniature terminal receptacle ( | 2012-01-05 |
20120003882 | ELECTRICAL TERMINAL WITH COIL SPRING - An electrical terminal operable to facilitate electrical connectivity between the terminal and an electrical connector. The electrical terminal may include a cap to facilitate positioning a conducting element, such as but not limited to a coil spring, within a receptacle used to connect to an electrically conducting connector. The conducting element may facilitate electrical connectivity between the inserted connector and the terminal. | 2012-01-05 |
20120003883 | ELECTRICALLY CONDUCTING TERMINAL - An electrical terminal having at least one open end that is configured to receive a connector in an electrically conducting manner. The open end portion of the connector may be configured with differently sized and/or shaped portions to facilitate receipt of connector, such as to receive the connector in a manner that limits misalignment and/or receipt of bent or crooked connectors. | 2012-01-05 |
20120003884 | CONTACT ELEMENT WITH AN ELECTRONICALLY CONDUCTIVE SPRING ELEMENT, PLUG CONNECTOR AND SPRING ELEMENT - The invention relates to a spring element, to a plug-in connection and to a contact element with an electrically conductive spring element which is in contact with the contact element and which is provided to establish an electrical contact to a mating contact element. The spring element has the form of an open band which is at least partially rolled up along a longitudinal axis. | 2012-01-05 |
20120003885 | RECEPTACLE WITH SHAPED SURFACE - The instant invention discloses a receptacle having a shape along the width of its face that is flat in one plane and along its length that has a constant radius. The shape of the face of the receptacle allows for the proper seating of an inserted plug. The shape of a wall plate around the receptacle along a section which runs along its vertical axis defines a surface of positive first differential and zero second differential, comprised of a combination of splines drawn between points of varying distance from a datum plane. The surface has zero second differential when the rate of height increase of individual splines is constant. When ganged with a switch, the front surface of the switch follows the shape of the cover plate. | 2012-01-05 |
20120003886 | DRIVESHAFT SEALING FOR A MARINE PROPULSION SYSTEM - A sealing unit longitudinally comprises first and second sealing sub-units disposed around first and second portions of a driveshaft of a marine propulsion system of a watercraft. The first sealing sub-unit is sealingly connected to a front wall of the hull and the engine casing. The second sealing sub-unit is sealingly connected to the driveshaft and a crankshaft. The second sealing sub-unit is disposed at least partially inside the first sealing sub-unit. An inside of the first sealing sub-unit is in fluid communication with a water intake ramp. An inside of the second sealing sub-unit is in fluid communication with an interior of an engine. The first sealing sub-unit prevents fluid communication between the water intake ramp and a portion of an inside of the hull. The second sealing sub-unit prevents fluid communication between the engine, the inside of the hull, and the water intake ramp. | 2012-01-05 |
20120003887 | FLOATING FRIENDSHIP ASSEMBLY - A floating friendship assembly ( | 2012-01-05 |
20120003888 | BIOADHESIVE CONSTRUCTS WITH POLYMER BLENDS - The invention describes substrates, such as prosthetics, films, nonwovens, meshes, etc. that are treated with a bioadhesive polymer blend. The bioadhesive includes polymeric substances that have phenyl moieties with at least two hydroxyl groups. The bioadhesive blend constructs can be used to treat and repair, for example, hernias and damaged tendons. | 2012-01-05 |
20120003889 | REINFORCEMENT FOR ASPHALTIC PAVING, METHOD OF PAVING, AND PROCESS FOR MAKING A GRID WITH THE COATING FOR ASPHALTIC PAVING - A composite material comprises: an open grid comprising at least two sets of strands. Each set of strands has openings between adjacent strands. The sets are oriented at a substantial angle to one another. A tack film is laminated to the open grid. The tack film has first and second major surfaces, such that a material of the tack film at its first and second major surfaces is a material including about 50% or more of resinous non-asphaltic component and about 50% or less of asphaltic component. | 2012-01-05 |
20120003890 | PREPEGS AND MOLDED BODIES PRODUCED THEREOF AT LOW TEMPERATURE - The invention relates to prepregs and composite components (moulding) produced therefrom at a low temperature, obtainable by using powdery highly reactive polyurethane compositions containing uretdione groups, with specific catalysts. | 2012-01-05 |
20120003891 | PREPREGS AND MOLDED BODIES PRODUCED FROM SAME - The invention relates to prepregs and composite components produced therefrom (mouldings), obtainable by the use of powdery reactive polyurethane compositions. | 2012-01-05 |
20120003892 | Phosphoric Acid Resistant Polymaleimide Prepolymer Compositions - The present invention relates to a phosphoric acid resistant advanced polymaleimide prepolymer composition including a polymaleimide prepolymer resulting from the advancement reaction of a polyimide and an alkenylphenol, alkenylphenol ether or mixture thereof in the presence of an amine catalyst; a solvent and a heteropolyacid. The phosphoric acid resistant advanced polymaleimide prepolymer composition may be used in various applications such as prepregs, laminates, printed circuit boards, castings, composites, moulded articles, adhesives and coatings. | 2012-01-05 |
20120003893 | Composite Nanofibers - The present invention is generally directed to, in one embodiment, a composite nanofiber having a plurality of nanoparticles retained on the surface of the nanofiber, and a process for forming such composite nanofibers. | 2012-01-05 |
20120003894 | ELECTRET FILTER FOR VEHICULAR COMPARTMENT INTERIOR AND PRODUCTION METHOD THEREOF - The electret filter for vehicular compartment interior of the present invention has a nonwoven fabric which contains a polyolefin resin having a melt flow rate of 1,000 to 3,000 g per 10 minutes, and a heat generation amount of 2.0 to 10.0 J/g in a temperature range from 80° C. to 120° C. when the temperature of the polyolefin resin is elevated at a rate of 10° C. per minute in a differential scanning calorimetric analysis. The electret filter for vehicular compartment interior is manufactured by a method including a process for producing the nonwoven fabric by melt-blowing method, and a process for electrostatic charging the nonwoven fabric by means of corona discharge. | 2012-01-05 |
20120003895 | Field emission electrode, method of manufacturing the same, and field emission device comprising the same - Provided are a field emission electrode, a method of manufacturing the field emission electrode, and a field emission device including the field emission electrode. The field emission electrode may include a substrate, carbon nanotubes formed on the substrate, and a conductive layer formed on at least a portion of the surface of the substrate. Conductive nanoparticles may be attached to the external walls of the carbon nanotubes. | 2012-01-05 |
20120003896 | FLYING TOY ABLE TO MOVE BY THE FLAPPING OF WINGS - Disclosed is a flying toy capable of moving by flapping of wings. The flying toy comprises a support structure; an actuation mechanism, for the wings, arranged on the support structure and comprising a crank drive rotated by a means providing the driving force; and two flexible wings arranged symmetrically with respect to the vertical plane of symmetry of the toy and connected, at the wing bases, to the actuation mechanism, the aforementioned wing bases being mounted oscillating about axes arranged on both sides of the vertical plane of symmetry of the toy. A controller receives a control signal indicating a left turn, increases the tension on the right wing and reduces it on the left wing and, for a right turn, the opposite action is performed. | 2012-01-05 |
20120003897 | Therapeutic Stuffed Animal - A kit for coping with emotional stress is disclosed. The kit includes a stuffed animal having an interior pouch that may be opened or closed. One example of a stuffed animal is a stuffed bear with a pouch accessible from the back. A message pad having individual blank messages for expressions by a person affected by emotional stress is included. Each message may have a shape such as a heart and be used for coping with separation or loss. A therapeutic booklet is provided having instructions for writing messages and inserting the messages in the interior pouch. | 2012-01-05 |
20120003898 | Apparatus for Circulating Glitter Particles - A glitter circulation device includes a housing defining a chamber configured to receive a doll. A tray is coupled to the housing and configured to hold a plurality of glitter particles. A fan is coupled to housing and in communication with the tray and the chamber. The fan is configured to draw the glitter particles from the tray and expel the glitter particles into the chamber. | 2012-01-05 |
20120003899 | COMBINED TOY DOLL AND ARTIFICIAL FLOWER - The present disclosure generally pertains to toys that have dolls combined with artificial flowers. A topsy turvy toy in one exemplary embodiment comprises an artificial flower at one end and a doll having a head at an opposite end. A cover is coupled to the toy between the head and the artificial flower. In one mode of use, the cover is pulled over the doll substantially hiding the doll and exposing the artificial flower. For another mode of use, the cover is pulled over the artificial flower substantially hiding the artificial flower and exposing the doll. Accordingly, the toy is selectively transformed from a doll to an artificial flower and vice versa. | 2012-01-05 |
20120003900 | Apparatus and Method for Refinishing a Surface In-Situ - A rotary grinding system includes a support frame and a grinding assembly coupled to the support frame for longitudinal movement, with respect to a workpiece attached to the support frame. A radial arm is suspended below the grinding assembly and rotated in a plane parallel to the workpiece. A grinding wheel traverses the radial arm, thereby working a circular, annular or sector portion of the workpiece. The height, and therefore the depth of cut, of the grinding wheel may be precisely adjusted via a single point adjustment screw or the like. Optionally, the grinding system may be controlled by a computer numeric controller (CNC) to automatically refinish programmed portions or all of the workpiece. Eccentric pins extending from the support frame and into the workpiece may be used to adjust the lateral position of the support frame, relative to the workpiece. Support members may be used to offload the weight of at least a portion of the grinding assembly, thereby relieving bearings of this weight, such as during shipment or storage of the system. | 2012-01-05 |
20120003901 | COMPOSITION FOR ADVANCED NODE FRONT-AND BACK-END OF LINE CHEMICAL MECHANICAL POLISHING - The present disclosure is directed to a highly dilutable chemical mechanical polishing concentrate comprising an abrasive, an acid, a stabilizer, and water with a point-of-use pH ranging from 2.2-3.5 for planarizing current and next generation semiconductor integrated circuit FEOL/BEOL substrates. | 2012-01-05 |