02nd week of 2010 patent applcation highlights part 13 |
Patent application number | Title | Published |
20100006758 | IMAGE FORMING APPARATUS - An image forming apparatus includes an electromagnetic wave radiating portion, an electromagnetic wave detecting portion, a driving portion, a periodical signal generating portion for generating plural periodical signals, a memory portion, a processing portion, and an image forming portion. The driving portion changes the relative positional relationship between an object and the radiating portion. The detecting portion acquires transmitted or reflected wave from the object, as a time-series detection signal. The processing portion executes a process of multiplying the detection signals of the areas of the object with the periodical signals, and a process of adding the multiplied results and causing the memory portion to store the added results. The image forming portion forms an image of at least a portion of the object, based on information stored in the memory portion corresponding to the periodical signals, after the acquisition of the time-series detection signal, and the processes executed by the processing portion are repeated plural times for the areas of the object. | 2010-01-14 |
20100006759 | DYNAMIC EMERGENCY RADIATION MONITOR - A dynamic radiation monitor having a detector coupled to a computer to determine at any given location, the amount of time a person has before a pre-selected maximum permissible radiation exposure is received. The device dynamically calculates and outputs the user's permissible stay time for a given area based on a personalized maximum permissible dose, and adjusts in real time the output based on elapsed time and changing exposure rate. The device also provides the user audio and visual feedback such as varying background colors for different stay time ranges. | 2010-01-14 |
20100006760 | Ultraviolet lidar for detection of biological warfare agents - A system and method for detecting airborne agents. The system includes a semiconductor ultraviolet optical source configured to emit an ultraviolet light, a controller configured to generate a pseudo-random code for emission of the ultraviolet light modulated at the pseudo-random code, a telescope configured to focus the ultraviolet light to a distance from the source and to receive elastically backscattered signals and fluorescence signals from the distance, and a sensor configured to detect the elastically backscattered and fluorescence signals. The method generates a pseudo-random code and emits at least one wavelength of ultraviolet light modulated at the pseudo-random code, transmits the modulated ultraviolet light pulses to a distance from the source, receives elastically backscattered signals and fluorescence signals from the distance, and detects the elastically backscattered and fluorescence signals. | 2010-01-14 |
20100006761 | INFRARED RADIATION SOURCES, SENSORS AND SOURCE COMBINATIONS, AND METHODS OF MANUFACTURE - A blackbody radiation device ( | 2010-01-14 |
20100006762 | SCINTILLATOR PANEL AND RADIATION DETECTOR - A reflective resin sheet is bonded to one face of a supporting substrate transmitting a radiation ray and a resin sheet of the same material as that of the reflective resin sheet to the other face of the supporting substrate. A phosphor layer converting a radiation ray into visible light is formed additionally on the reflective resin sheet formed on one face of the supporting substrate. The phosphor layer is enclosed with an additional moisture-proof layer and the reflective resin sheet. It is possible to obtain a scintillator panel higher in sensitivity characteristics, stabilized in quality and more cost-effective by placing the reflective resin sheet between the supporting substrate and the phosphor layer. | 2010-01-14 |
20100006763 | Detector System with Positioning System - Provided is a detector module for measuring one or more types of radiation, in particular X-ray, gamma ray, or nuclear particle radiation, comprising a detection unit, an analog-to-digital converter, an information processing device, and a memory device for storing the position of the detector module. The detector module comprises at least one light-emitting diode (LED), optically connected with the detection unit for stabilizing the detector unit. Further, the invention provides a stanchion, in particular a portable stanchion, whereby the stanchion comprises a inventive detector module. Yet further, a (wireless) network of detector modules is provided, whereby each detector module is mounted within a stanchion. | 2010-01-14 |
20100006764 | DYNAMIC EMERGENCY RADIATION MONITOR - A dynamic radiation monitor having a detector coupled to a computer to determine at any given location, the amount of time a person has before a pre-selected maximum permissible radiation exposure is received. The device dynamically calculates and outputs the user's permissible stay time for a given area based on a personalized maximum permissible dose, and adjusts in real time the output based on elapsed time and changing exposure rate. The device also provides the user audio and visual feedback such as varying background colors for different stay time ranges. | 2010-01-14 |
20100006765 | Electrical Connection Of A Substrate Within A Vacuum Device Via Electrically Conductive Epoxy/Paste - An image intensifier includes a microchannel plate (MCP) having an output surface, and a ceramic substrate having an outer surface. The output surface of the MCP and the outer surface of the ceramic substrate are oriented facing each other. An imager is substantially buried within the ceramic substrate, and an input surface of the imager is exposed to receive electrons from the output surface of the MCP. The input surface of the imager and the outer surface of the ceramic substrate are oriented in substantially the same plane. The input surface of the imager and the outer surface of the ceramic substrate are disposed at a very close distance from the output surface of the MCP. The imager includes input/output pads, and the ceramic substrate includes input/output pads. A conductive epoxy connects a respective input/output pad of the imager to a respective input/output pad of the ceramic substrate. | 2010-01-14 |
20100006766 | PROCESS FOR PRODUCING BI12XO20 POWDER, BI12XO20 POWDER, RADIATION PHOTO-CONDUCTOR, RADIATION DETECTOR, AND RADIATION IMAGING PANEL | 2010-01-14 |
20100006767 | Radiographic imaging system - A radiographic imaging system comprises: imaging unit including a radiation source for emitting radiation and a radiation detector for detecting radiation emitted from the radiation source and having penetrated a subject; moving unit for moving the imaging unit between a plurality of imaging positions that partially share an imaging region with each other; control unit for sequentially moving the imaging unit to the imaging positions with the moving unit, causing the radiation source to emit radiation to acquire a short image with the radiation detector in each imaging position, and acquiring a dark image with the radiation detector after acquiring the short image; and image processing unit for performing residual image correction upon the short image acquired in each of the imaging positions based upon the dark image acquired immediately before the acquisition of the short image and thereafter combining corrected short images to obtain a long radiographic image. | 2010-01-14 |
20100006768 | PROCESS FOR PRODUCING Bi12XO20 POWDER, Bi12XO20 POWDER, RADIATION PHOTO-CONDUCTOR, RADIATION DETECTOR, AND RADIATION IMAGING PANEL | 2010-01-14 |
20100006769 | DETECTOR ASSEMBLY FOR DETECTING RADIATION WITH ANGULAR RESOLUTION AND METHOD FOR OPERATING SAID ASSEMBLY - A detector assembly for detecting radiation with angular resolution comprises at least one detector element, which comprises a front face and a rear face, a first detector material and a second detector material between the front face and the rear face, a space between the front face and the rear face of the detector element being filled by a plurality of regions of the first detector material and at least one region of the second detector material and each region connecting the front face to the rear face of the detector element; and radiation incident on the detector element through the front face being collimated by means of the detector materials. | 2010-01-14 |
20100006770 | CHARGED PARTICLE BEAM ACCELERATION AND EXTRACTION METHOD AND APPARATUS USED IN CONJUNCTION WITH A CHARGED PARTICLE CANCER THERAPY SYSTEM - The invention comprises a charged particle beam acceleration and optional extraction method and apparatus used in conjunction with charged particle beam radiation therapy of cancerous tumors. Novel design features of a synchrotron are described. Particularly, turning magnets, edge focusing magnets, concentrating magnetic field magnets, and extraction elements are described that minimize the overall size of the synchrotron, provide a tightly controlled proton beam, directly reduce the size of required magnetic fields, directly reduces required operating power, and allow continual acceleration of protons in a synchrotron even during a process of extracting protons from the synchrotron. | 2010-01-14 |
20100006771 | SPECIMAN HOLDER AND SPECIMAN HOLDER MOVEMENT DEVICE - It is an object of the present invention to provide a significantly beneficial specimen holder which allows mounting one or more specimens, for example, a specimen to be examined and a standard adjustment specimen for aberration correction in one specimen holder at the same time, thereby observing each specimens. The present invention is a specimen holder having a specimen holder movement mechanism for driving the specimen holder, wherein the specimen holder movement mechanism makes it possible to move the specimen holder approximately along the longer side of the specimen holder. In a preferred embodiment of the specimen holder according to the present invention, the specimen holder is characterized in that the specimen holder movement mechanism makes it possible to vary an insertion depth of the specimen holder into a tube for holding the specimen holder, with no relation to another specimen holder movement mechanism set for driving the specimen holder approximately along the longer side of the specimen holder. | 2010-01-14 |
20100006772 | METHOD AND APPARATUS FOR HIGH-RESOLUTION OPTICAL SCANNING OF A SAMPLE - A method and an apparatus are suggested for high-resolution optical scanning, particularly in a laser scanning fluorescence microscope. A sample to be scanned comprises a first and a second substance that are switchable into a first and second energy state. In the scanning process, excitation, de-excitation and detection for the first substance is carried out at a different point in time than for the second substance. This achieves a high spatial resolution beyond the diffraction limit while at the same time a high level of information is provided with physically simple and economical means. | 2010-01-14 |
20100006773 | Method and apparatus for measuring the phase shift induced in a light signal by a sample - A first light source emits a light signal along a measurement optical path that includes a sample and a second light source emits a light signal along a dummy measurement optical path. A measurement circuit receives the light signals and provides outputs separated in time which are indicative of the phase of the respective light signals. A phase shift is induced in light in the measurement optical path by the sample. A reference circuit receives a signal indicative of the phase of the light signals emitted by the first and second light sources. Circuitry compares the phases of light output from the two circuits to provide output indicative of a first measured phase difference during operation of the first light source. Correction is applied to this measurement by taking a similar phase difference measurement during operation of the second light source and comparing the two phase differences. | 2010-01-14 |
20100006774 | DETECTION METHOD, DETECTION APPARATUS, AND SAMPLE CELL AND KIT FOR DETECTION - A sensor chip including a sensor portion that has at least a metal layer deposited on a surface of a dielectric plate is used. A fluorescent-label binding-substance in an amount corresponding to the amount of a detection target substance in a liquid sample binds onto the sensor-portion. The amount of the detection target substance is detected based on the amount of light generated by excitation of a fluorescent label in the fluorescent-label binding substance. An electrified fluorescent substance containing a plurality of fluorescent dye molecules enclosed by a material that transmits fluorescence output from the plurality of fluorescent dye molecules is used as the fluorescent label. The electrified fluorescent substance is attracted to the sensor portion by applying voltage to the liquid sample in a state in which the fluorescent-label binding substance has bound to the sensor portion. In this state, the amount of the detection target substance is detected. | 2010-01-14 |
20100006775 | QUANTUM DOT PHOSPHORS FOR SOLID-STATE LIGHTING DEVICES - A phosphor for use, for example, with an ultraviolet LED to provide a broad-spectrum white light approximating diffuse sunlight, that includes quantum dots spaced from an activator material by a capping layer surrounding the quantum dots. This approach of spacing an activator material from the quantum dots provides improved spectral output for quantum dots of materials such as zinc sulfide. | 2010-01-14 |
20100006776 | SEMICONDUCTOR THIN FILM FORMING SYSTEM - A thin film processing method for processing the thin film by irradiating the optical beam to the thin film, wherein one set of irradiation includes the first optical pulse irradiation to the thin film and the second optical pulse irradiation to the thin film which substantially starts with a delay to the first optical pulse irradiation, the one set of irradiation being repetitively carried out for processing the thin film, and the relationship between the first and the second pulse satisfies (the pulse width of the first optical pulse)>(the pulse width of the second optical pulse). Preferably, the relationship between the first and the second pulse satisfies (the irradiation intensity of the first optical pulse)≧(the irradiation intensity of the second optical pulse). A silicon thin film with a small trap state density is thus manufactured by the optical irradiation. | 2010-01-14 |
20100006777 | PROCESS FOR PRODUCING DOPED GALLIUM ARSENIDE SUBSTRATE WAFERS HAVING LOW OPTICAL ABSORPTION COEFFICIENT - A process is disclosed for producing a doped gallium arsenide single crystal by melting a gallium arsenide starting material and subsequently solidifying the gallium arsenide melt, wherein the gallium arsenide melt contains an excess of gallium relative to the stoichiometric composition, and wherein it is provided for a boron concentration of at least 5×10 | 2010-01-14 |
20100006778 | ION RADIATION THERAPY SYSTEM WITH DISTAL GRADIENT TRACKING - An ion radiation therapy machine provides a control of the range of the ion beam that a Bragg peak of the beam is located according to a determined gradient of the dose plan. | 2010-01-14 |
20100006779 | ION IMPLANTATION APPARATUS AND ION IMPLANTATION METHOD - This ion implantation apparatus is provided with a holding devise which holds the wafer, and which turns it along its circumference. In addition to holding the wafer at a prescribed position, the ion implantation apparatus subjects the wafer to ion implantation in regions where there is partial overlap of its circumference. The holding devise turns and inclines the wafer, and also holds the wafer by three or more holding pins. The side face of the holding pin has an inversely tapered shape, and the multiple holding pins include a first holding pin whose protrusion amount is relatively small, and a second holding pin whose protrusion amount is relatively large. The holding pin which is on the upper side from the center of the wafer in the planar direction of the inclined wafer is the second holding pin, and the angle of inclination of the side face of the second holding pin at a position where ions are implanted into the wafer has an angular degree which is equal to or less than an angle of incidence of the ion beam relative to the wafer. | 2010-01-14 |
20100006780 | Method and Apparatus for Enhanced Terahertz Radiation from High Stacking Fault Density - A method and device for generating terahertz radiation comprising a polar crystal material layer operative to emit terahertz radiation; the polar crystal material layer comprising a plurality of stacking faults; the stacking faults lying substantially perpendicular to the polar axis and forming boundaries at which the internal electric polarization terminates leading to charges accumulating at the boundaries, and creation of internal electric fields oriented along the polar axis; a pulsed radiation source for creating photogenerated carriers in the polar crystal material; whereby the photogenerated carriers accelerate in the internal electric fields associated with the termination of the internal electric polarization by the stacking faults to thereby generate terahertz radiation. | 2010-01-14 |
20100006781 | HOLLOW GRID AND MANUFACTURING METHOD THEREOF - A hollow grid that can be manufactured easily, capable of inhibiting the generation of moire fringes, and absorbing less transmitted X-rays is provided. The hollow grid uses no intermediate material that is capable of transmitting the X-rays. X-ray shielding members are located at intervals of an integral multiple of a pixel pitch of a two-dimensional radiation detector. The X-ray shielding members are held by adhering to the upper and lower wrapping members. Therefore, through a sensitivity correction, the structure, in which the generation of moire fringe is difficult, is provided. Since the hollow grid is assembled by means of an assembling jig, the intervals of the X-ray shielding members can be formed easily with high precision. The quality variation of the completed hollow grids is small, and the product precision is high. | 2010-01-14 |
20100006782 | Detection device - A detection device with at least one detector and a processing unit for processing signals of the detector is disclosed. In at least one embodiment, the detection device includes at least one cooling unit for cooling the detector and the processing unit. A shielding is provided for the detector and the processing unit. The shielding includes at least two linked sections, of which a first section has a higher electrical conductivity than a second section, the second section being in thermal contact with the cooling unit. | 2010-01-14 |
20100006783 | LIGHT EMITTING DIODE DISPLAY DEVICE - The present disclosure relates to a light emitting diode display device which can prevent a drive switching device from degrading. The light emitting diode display device includes a plurality of pixel cells each having a light emitting diode, a plurality of data lines for transmission of data signal having information on a picture, a plurality of gate lines for transmission of a gate signal having a gate high voltage, a first gate low voltage, and a second gate low voltage having a polarity opposite to the data signal, wherein the gate high voltage, the first gate low voltage and the second gate low voltage having potentials different from one another wherein each of the pixel cells includes a signal transmission switching device for connecting the data line to a node according to the first gate high voltage from the gate line, a drive switching device for controlling an intensity of a drive current being supplied to the light emitting diode according to a signal state of the node, a storage capacitor connected between the node and a source electrode or a drain electrode of the drive switching device, and a control switching device for connecting the gate line to the node in response to the second gate low voltage from the gate line and a control signal from a control line. | 2010-01-14 |
20100006784 | METHOD AND SYSTEM FOR A LIGHT SOURCE ASSEMBLY SUPPORTING DIRECT COUPLING TO AN INTEGRATED CIRCUIT - Methods and systems for a light source assembly supporting direct coupling to a photonically enabled complementary metal-oxide semiconductor (CMOS) chip are disclosed. The assembly may include a laser, a microlens, a turning mirror, reciprocal and/or non-reciprocal polarization rotators, and an optical bench. The laser may generate an optical signal that may be focused utilizing the microlens. The optical signal may be reflected at an angle defined by the turning mirror, and may be transmitted out of the light source assembly to one or more grating couplers in the chip. The laser may include a feedback insensitive laser. The light source assembly may include two electro-thermal interfaces between the optical bench, the laser, and a lid affixed to the optical bench. The turning mirror may be integrated in a lid affixed to the optical bench or may be integrated in the optical bench. | 2010-01-14 |
20100006785 | METHOD AND APPARATUS FOR THIN FILM QUALITY CONTROL - Photovoltaic thin film quality control is obtained where the thin film is supported by a support and a section of the film is illuminated by a polychromatic illumination source. The source forms on the thin film a continuous illuminated line. Discrete sampled points located on the illuminated line are imaged onto a two dimensional optical switch. A concordance look-up-table between the coordinates of the above sampled points on the thin film and their coordinates on the two dimensional optical switch are generated. The spectral composition of the illumination reflected by the sampled points is determined and photovoltaic thin film parameters applicable to the quality control are derived from the spectral composition of reflected or transmitted by the photovoltaic thin film illumination. | 2010-01-14 |
20100006786 | METHOD AND APPARATUS FOR OPTICAL LEVEL SENSING OF AGITATED FLUID SURFACES - A method and apparatus provide for non-contact optical measurement of the level of a fluid stored in a tank or container, the surface of the fluid being possibly agitated. The method processes numerically the digitized signal waveforms generated by a lidar apparatus based on a pulsed time-of-flight modulation scheme. A key step of the numerical processing is the computation of a waveform in which each data point is obtained from a statistical estimator of the variability of the amplitude signal echo measured at the distance from the lidar apparatus that corresponds to the rank of the data point in the waveform. The statistical estimator is preferably the standard deviation. By using a statistical estimator of the variability of the captured signal amplitude, the specific signal echo returned from an agitated fluid surface can be greatly amplified as compared to the signal echoes returned from any obstacle or medium that could be present along the path of the optical beam radiated by the lidar apparatus. The method then allows for an efficient retrieval of the useful signal echo from which the level of the fluid surface can be reliably measured with greater accuracy, particularly in situations where the useful signal echo would be buried in a strong signal echo returned from any optically scattering or absorbing medium that would fill in the volume of the tank above the fluid surface. | 2010-01-14 |
20100006787 | Fluid Controller With Joint - To provide a fluid controller with a joint, which has a general versatility and can reduce a storage cost and a storage space. | 2010-01-14 |
20100006788 | VALVE ASSEMBLY HAVING MAGNETICALLY-ENERGIZED SEAL MECHANISM - A valve assembly is provided that includes a flowbody, a valve element movably disposed within the flowbody, and a magnetically-energized seal mechanism. The magnetically-energized seal mechanism includes a wiper seal carried by one of the flowbody and the valve element and movable between a retracted position and an extended position. A first magnetic element is fixedly coupled to the wiper seal, and a second magnetic element is fixedly coupled to one of the flowbody and the valve element. The second magnetic element magnetically repels the first magnetic element to bias the wiper seal toward the extended position. | 2010-01-14 |
20100006789 | Operating Device for Control Valve - An operating device with an operating lever for a control valve includes: an input member connected to the operating lever; an output member connected to a slide spool of the control valve; and a swing link for relaying a displacement of the input member to the output member. The swing link is swingable about a swing shaft center on one end and is connected to the input and output members. A latch portion in the swing link is farther than a connecting point with the output member from the swing shaft center. A lock body is switchably operable between a lock position and a release position, and at the lock position, engaged with the latch portion at a neutral position to limit a swing of the swing link about the swing shaft center by which the control valve is locked at a neutral state. | 2010-01-14 |
20100006790 | SIGNALING OF THE ACTIVE SAFETY POSITION OF ELECTROPNEUMATIC POSITION REGULATORS - An electropneumatic position regulator for controlling a pressure-medium-operated actuating drive to which compressed air can be applied via a working connection of the actuating drive. Compressed air is made available to the position regulator via a feed pressure connection, and the pressure regulator includes an electronic control unit configured to assume a safety position in the event of a fault. When the electronic control unit assumes a safety position, a downstream signal output unit, which acts as a driver stage, generates at least one binary fault signal which is indicated in an externally perceptible manner (e.g., visually and/or audibly) by at least one signaling device fitted externally to a housing of the position regulator. | 2010-01-14 |
20100006791 | VALVE EXTENSION HANDLE AND METHOD OF USING THE SAME - An extension handle is coupled to a flow control device of a railcar. The extension handle includes a first rod having a first end operatively coupled to the flow control device, an opposing second end forming a handle, and a midsection slidably coupled to a support member coupled to the railcar. | 2010-01-14 |
20100006792 | STEAM VALVE - A steam valve is provided with a valve body, a valve seat, and a valve rod provided for the valve body. The valve body has a bottom portion to which a recessed portion is formed, and the recessed portion has an edge, which is positioned on an upstream side of a place at which a shock wave is generated in steam flowing through a steam path defined by the valve body and the valve seat. | 2010-01-14 |
20100006793 | Valve Gear - The reliability of a valve gear in which a cobalt-based alloy is welded by plasma powder building-up welding is improved. Disclosed is a valve gear including a bearing | 2010-01-14 |
20100006794 | Phosphonium Ionic Liquids, Compositions, Methods of Making and Devices Formed There From - The invention generally encompasses phosphonium ionic liquids and compositions and their use in many applications, including but not limited to: as electrolytes in electronic devices such as memory devices including static, permanent and dynamic random access memory, as battery electrolytes, as a heat transfer medium, fuel cells and electrochromatic devices, among other applications. In particular, the invention generally relates to phosphonium ionic liquids, compositions and molecules possessing structural features, wherein the molecules exhibit superior combination of thermodynamic stability, low volatility, wide liquidus range and ionic conductivity. The invention further encompasses methods of making such phosphonium ionic liquids, compositions and molecules, and operational devices and systems comprising the same. | 2010-01-14 |
20100006795 | Preparation of polymer particles - A process for the preparation of polymer magnetic particles, which comprises: (a) providing a water phase containing magnetic components homogeneously dispersed therein; (b) wherein the water phase is contacted with or further contains a polymerisable metal-containing or organic monomer which is soluble in the water phase; and (c) polymerizing the monomer in the presence of the magnetic in which the magnetic components are substantially uniformly distributed; wherein at least a part of the polymerizing step (c) is carried out in a water-in-oil emulsion in which the water phase containing the magnetic components homogeneously dispersed therein is present as a discontinuous phase in a continuous oil phase. | 2010-01-14 |
20100006796 | HEAT TRANSFER FLUID, ADDITIVE PACKAGE, SYSTEM AND METHOD - Disclosed herein is a heat transfer fluid, comprising a hydroxylated carboxylic acid of formula (OH)x(R1)(COOH)y, wherein x is 2 to 10, y is 3 to 10, and R1 is a C2-50 aliphatic group, a C6-50 aromatic group, or a combination thereof; and wherein the hydroxylated carboxylic acid comprises the hydroxylated carboxylic acid, an ester thereof, a salt thereof, an anhydride thereof, or a combination thereof. A heat transfer system comprises an aluminum component, a magnesium component, or an aluminum component and a magnesium component; and the foregoing heat transfer fluid. | 2010-01-14 |
20100006797 | Heat Transfer Medium, Phosphonium Ionic Liquids, and Methods of Making - The invention generally encompasses phosphonium ionic liquids and compositions and their use in many applications, including but not limited to: as electrolytes in electronic devices such as memory devices including static, permanent and dynamic random access memory, as battery electrolytes, as a heat transfer medium, fuel cells and electrochromatic devices, among other applications. In particular, the invention generally relates to phosphonium ionic liquids, compositions and molecules possessing structural features, wherein the molecules exhibit superior combination of thermodynamic stability, low volatility, wide liquidus range and ionic conductivity. The invention further encompasses methods of making such phosphonium ionic liquids, compositions and molecules, and operational devices and systems comprising the same. | 2010-01-14 |
20100006798 | HEAT-CONDUCTIVE SILICONE COMPOSITION - A heat-conductive silicone composition comprising (A) a silicone resin, (B) a heat-conductive filler, and (C) a volatile solvent is disposed between a heat-generating electronic part and a heat sink part. It is a grease-like composition at room temperature prior to application to the electronic or heat sink part. It becomes a non-flowable composition as the solvent volatilizes off after application, and this composition, when heated during operation of the electronic part, reduces its viscosity, softens or melts so that it may fill in between the electronic and heat sink parts. | 2010-01-14 |
20100006799 | Method and Composition for Selectively Stripping Nickel from a Substrate - A method of stripping nickel from a printed wiring board comprises providing a printed wiring board with a nickel deposit on a surface and contacting the nickel deposit with phosphate ions and an oxidizer. An aqueous solution comprises ammonium ions, phosphate ions and an oxidizing agent present in amounts effective to strip nickel. An aqueous solution comprises about 1% to about 10% by weight hydrogen peroxide and about 5% to about 30% by weight of an ammonium phosphate. A method of pre-treating a copper substrate comprises providing a printed wiring board having a copper substrate and contacting the copper substrate with phosphate ions, and an oxidizer. A method of neutralizing permanganate on a printed wiring board comprises providing a printed wiring board with a permanganate residue on the printed wiring board and contacting the permanganate residue with phosphate ions, and an oxidizer. | 2010-01-14 |
20100006800 | Composition for operation of evaporative cooling towers with minimal or no blowdown - A method and composition are provided for the operation of an evaporative cooling tower with minimal, or no, blowdown. In some embodiments, the method involves using sodium cation-exchanged softened water as makeup water for the cooling tower, providing a bypass filter for suspended solids removal from the cooling water, treating the cooling water with a composition for control of corrosion and deposition, and using an effective biocide for control of biological growth within the cooling tower system. In some embodiments, a composition is provided that comprises AMPS acrylic terpolymer, sodium silicate, phosphate ions, and polyphosphate ions. When dosed at the recommended levels, the composition controls corrosion of cooling system materials to generally acceptable levels in spite of the extremely corrosive environment resulting from the cycling of sodium cation-exchanged softened water in the cooling tower. | 2010-01-14 |
20100006801 | Sugar derivatives and application of same - A sugar derivative derived from Aphanothece sacrum as a freshwater blue-green alga, having a mean molecular weight of 2,000,000 or more and a repeat structure of a sugar chain unit where a sugar constituent of a hexose structure and a sugar constituent of a pentose structure are conjugated together in a linear chain or a branched chain, containing a lactated, sulfated sugar as a constituent, where 2.7 or more hydroxyl groups per 100 hydroxyl groups are sulfated or sulfur element occupies 1.5% by weight or more of all of the elements, in the sugar chain unit. | 2010-01-14 |
20100006802 | Display for image and manufacturing method at the same - The present invention relates to a display, more specifically, to an image display improving a hot spot and a viewing angle and solving problems caused by the chemical characteristic of materials, even if implementing a display by projection-type, and manufacturing method at the same. | 2010-01-14 |
20100006803 | METHOD OF TREATING A HIGH-PRESSURE HYDROCARBON STREAM HAVING A HIGH CARBON DIOXIDE CONTENT TO YIELD A HIGH PURITY HYDROCARBON GAS STREAM AND A SEQUESTRATION READY CARBON DIOXIDE GAS STREAM - A method of treating a high-pressure hydrocarbon stream, such as natural or synthetic gas, contaminated with a high concentration of carbon dioxide, by contacting the contaminated high-pressure hydrocarbon stream with a chilled aqueous ammonia solution in an absorber at high pressure to produce a treated gas stream having a substantially reduced carbon dioxide content and a carbon dioxide-rich ammonia solution. The carbon dioxide-rich ammonia solution is regenerated by stripping, thus producing a concentrated carbon dioxide stream at high pressure suitable for sequestration or other uses. | 2010-01-14 |
20100006804 | HIGHLY PROTONATED, SUPERCHARGED, LOW PH, NON-CORROSIVE COMPOSITION - A highly protonated, supercharged, low pH, non-corrosive composition and process for making the composition wherein the composition has a milli-volt charge between 400 and 1400, a proton count between 8×10̂24 and 14×10̂24, and a pH level at 1 part composition with 99 parts water between 0.9 and 1.8. | 2010-01-14 |
20100006805 | PROCESS FOR PRODUCTION OF BINUCLEAR METAL COMPLEX - Disclosed is a process for production of an asymmetric binuclear metal complex represented by the general formula: (L | 2010-01-14 |
20100006806 | Method of protecting organic material from light - The present invention relates to a method of protecting organic material, especially from the pharmaceuticals and foodstuffs sectors, against light, wherein at least one pigment of formula (1), (2), (3), (4), (5), (6) and (7) and (8) as defined in claim | 2010-01-14 |
20100006807 | TENSION RING LIFTING ASSEMBLY - A tension ring lifting assembly ( | 2010-01-14 |
20100006808 | CHAIN SPROCKET WITH INCREASED LOAD CAPACITY - A chain sprocket for link chains, for example, round link chains or profiled steel chains, has chain pockets for horizontal chain links. Chain pockets for vertical chain links are also provided. The chain pockets for the vertical chain links are separated from one another by teeth. The tooth flank surface of the tooth that a vertical chain link contacts under the effect of a load is dimensioned and profiled in a special manner. The dimensioning is such that up to a defined chain load the vertical chain link does not contact the tooth flank with its nose. A contact between the tooth flank surface and the nose of the respective chain link occurs only above a defined chain load. | 2010-01-14 |
20100006809 | DRIVING DEVICE - An output shaft to which the rotational force of a motor is transferred is housed in a case. One end side of the output shaft protrudes from a side surface of the case. A pinion gear is fixed to one end side of the output shaft. Teeth that mesh with the pinion gear are formed on the outer circumferential surface of cables. Cable guide surfaces for guiding the cables to mesh with the pinion gear are provided on the side surface of the case. | 2010-01-14 |
20100006810 | Memory device and method of manufacturing the same - Provided are a memory device formed using one or more source materials not containing hydrogen as a constituent element and a method of manufacturing the memory device. | 2010-01-14 |
20100006811 | CARBON-BASED INTERFACE LAYER FOR A MEMORY DEVICE AND METHODS OF FORMING THE SAME - In a first aspect, a memory cell is provided that includes (1) a first conductor; (2) a reversible resistance-switching element formed above the first conductor including (a) a carbon-based resistivity switching material; and (b) a carbon-based interface layer coupled to the carbon-based resistivity switching material; (3) a steering element formed above the first conductor; and (4) a second conductor formed above the reversible resistance-switching element and the steering element. Numerous other aspects are provided. | 2010-01-14 |
20100006812 | CARBON-BASED RESISTIVITY-SWITCHING MATERIALS AND METHODS OF FORMING THE SAME - Memory devices including a carbon-based resistivity-switchable material, and methods of forming such memory devices are provided, the methods including introducing a processing gas into a processing chamber, wherein the processing gas includes a hydrocarbon compound and a carrier gas, and generating a plasma of the processing gas to deposit a layer of the carbon-based switchable material on a substrate within the processing chamber. Numerous additional aspects are provided. | 2010-01-14 |
20100006813 | PROGRAMMABLE METALLIZATION MEMORY CELLS VIA SELECTIVE CHANNEL FORMING - A programmable metallization memory cell that has an apertured insulating layer comprising at least one aperture therethrough positioned between the active electrode and the inert electrode. Superionic clusters are present within the at least one aperture, and may extend past the at least one aperture. Also, methods for making a programmable metallization memory cell are disclosed. | 2010-01-14 |
20100006814 | PHASE-CHANGE MEMORY ELEMENT - A phase-change memory cell is proposed. The phase-change memory includes a bottom electrode; a phase-change spacer formed to contact the bottom electrode; an electrical conductive layer having a vertical portion and a horizontal portion, wherein the electrical conductive layer electrically connects to the phase-change spacer via the horizontal portion; and a top electrode electrically connected to the electrical conductive layer via the vertical portion of the electrically conductive layer. | 2010-01-14 |
20100006815 | PHASE CHANGE MEMORY AND RECORDING MATERIAL FOR PHASE CHANGE MEMORY - A recording material for a phase change solid memory may include a uniform-mixed phase that includes: at least one of a Te-containing alkali metal iodide phase and a Te-containing silver iodide phase, and an Sb—Te alloy phase. The recording material shows at least one of a phase change and a phase separation which changes at least one of optical property and electrical property of the recording material. | 2010-01-14 |
20100006816 | Self-aligned vertical bipolar junction transistor for phase change memories - A phase change memory may include self-aligned polysilicon vertical bipolar junction transistors used as select devices. The bipolar junction transistors may be formed with double shallow trench isolation. For example, the emitters of each bipolar transistor may be defined by a first set of parallel trenches in one direction and a second set of parallel trenches in the opposite direction. In some embodiments, the formation of parasitic PNP transistors between adjacent emitters may be avoided. | 2010-01-14 |
20100006817 | OPTOELECTRONIC SEMICONDUCTOR DEVICE - The present invention provides an optoelectronic semiconductor device comprising at least one semiconductor nanowire, wherein the nanowire comprises a nanowire core and at least one shell layer arranged around at least a portion of the nanowire core. The nanowire core and the shell layer form a pn or pin junction that in operation provides an active region for carrier generation or carrier recombination. Quantum dots adapted to act as carrier recombination centres or carrier generation centres are arranged in the active region. By using the nanowire core as template for formation of the quantum dots and the shell layer, quantum dots of homogeneous size and uniform distribution can be obtained. Basically, the optoelectronic semiconductor device can be used for light generation or light absorption. In the former case the optoelectronic semiconductor device is a light emitting diode or a laser diode and in the latter case the optoelectronic semiconductor device is a photoelectric device, such as a photo diode, a photo detector or a solar cell. | 2010-01-14 |
20100006818 | LIGHT EMITTING DIODE - A light emitting diode which includes a laminate including an n-type cladding layer, an emission layer which has a quantum well structure having a well layer and a barrier layer, an intermediate layer and a p-type cladding layer in this order, wherein the composition of each of the layers is represented by the composition formula: (Al | 2010-01-14 |
20100006819 | LIGHT EMITTING DEVICE AND DISPLAY - A light emitting device containing a semiconductor light emitting component and a phosphor, the phosphor is capable of absorbing a part of light emitted by the light emitting component and emitting light of a wavelength different from that of the absorbed light, is provided. A straight line connecting a point of chromaticity corresponding to a spectrum generated by the light emitting component and a point of chromaticity corresponding to a spectrum generated by the phosphor is substantially along a black body radiation locus in a chromaticity diagram. | 2010-01-14 |
20100006820 | SILICA NANOWIRE COMPRISING SILICON NANODOTS AND METHOD OF PREPARING THE SAME - Provided are a silica nanowire that includes silicon nanodots and a method of preparing the same. The silica nanowire has excellent capacitance characteristics and improved light absorption ability, and thus can be effectively used in a variety of fields, such as various semiconductor devices including CTF memory, image sensors, photodetectors, light emitting diodes, laser diodes, and the like. | 2010-01-14 |
20100006821 | NANOSCALE MULTI-JUNCTION QUANTUM DOT DEVICE AND FABRICATION METHOD THEREOF - The present invention relates to a method of fabricating a nanoscale multi-junction quantum dot device wherein it can minimize constraints depending on the number or shape of patterns and a line width, and in particular, overcome shortcomings depending on the proximity effect occurring between patterns while employing the advantages of electron beam lithography to the utmost by forming a new conductive layer between the patterns and utilizing it as a new pattern. | 2010-01-14 |
20100006822 | COMPLEMENTARY BARRIER INFRARED DETECTOR (CBIRD) - An infrared detector having a hole barrier region adjacent to one side of an absorber region, an electron barrier region adjacent to the other side of the absorber region, and a semiconductor adjacent to the electron barrier. | 2010-01-14 |
20100006823 | Semiconducting Device Having Graphene Channel - The present invention, in one embodiment, provides a semiconductor device including a substrate having an dielectric layer; at least one graphene layer overlying the dielectric layer; a back gate structure underlying the at least one graphene layer; and a semiconductor-containing layer present on the at least one graphene layer, the semiconductor-containing layer including a source region and a drain region separated by an upper gate structure, wherein the upper gate structure is positioned overlying the back gate structure. | 2010-01-14 |
20100006824 | ORGANIC NANOFIBER STRUCTURE BASED ON SELF-ASSEMBLED ORGANOGEL, ORGANIC NANOFIBER TRANSISTOR USING THE SAME, AND METHOD OF MANUFACTURING THE ORGANIC NANOFIBER TRANSISTOR - An organic nanofiber including a gelled organic semiconductor compound. Also disclosed is an organic semiconductor transistor and a method of manufacturing an organic semiconductor transistor. | 2010-01-14 |
20100006825 | SUPERCONDUCTING JUNCTION ELEMENT AND SUPERCONDUCTING JUNCTION CIRCUIT - A superconducting junction element has a lower electrode formed by a superconductor layer, a barrier layer provided on a portion of a surface of the lower electrode, an upper electrode formed by a superconductor and covering the barrier layer, and a superconducting junction formed by the lower electrode, the barrier layer and the upper electrode. A critical current density of the superconducting junction is controlled based on an area of the lower electrode. | 2010-01-14 |
20100006826 | INCREASING YIELD IN OFETS BY USING A HIGH-K DIELECTRIC LAYER IN A DUAL DIELECTRIC LAYER - Dielectric layer pinholes in OFET structures are addressed through the addition of a high-K dielectric layer to eliminate the effects of shorts in the dielectric layer. The original dielectric layer is maintained such that the semiconductor/dielectric interface remains unchanged. The high-K dielectric layer contributes material to the gate dielectric to plug up pinholes in the original dielectric, but does not contribute significant capacitance due to the high dielectric constant of the additional dielectric layer. The incidence of pinholes in the dielectric layer is reduced without significantly affecting the performance of the OFET transistor. | 2010-01-14 |
20100006827 | Electroluminescent Device - An electroluminescent device comprises, in order: an opaque semiconducting substrate ( | 2010-01-14 |
20100006828 | ORGANIC ELECTROLUMINESCENCE ELEMENT - The invention provides an organic electroluminescence element which comprises a hole transporting layer which comprises a tris(p-terphenyl-4-yl)amine represented by the general formula (I) | 2010-01-14 |
20100006829 | Diode employing with carbon nanotube - A diode includes an organic composite plate, a pressing element, a first electrode, and a second electrode. The organic composite plate has a plurality of carbon nanotubes uniformly distributed therein and includes a first portion and a second portion opposite to the first portion. The pressing element is disposed on the first portion of the organic composite plate. The first and second electrodes are electrically connected to the first and second portions of the organic composite plate, respectively. The diode employed with the carbon nanotubes has a changeable characteristic, such as voltage, current, via controlling the pressure applied by the pressing element. | 2010-01-14 |
20100006830 | Organic semiconductor compound based on 2,7-bis-(vinyl)[1]benzothieno[3,2-b]benzothiophene, organic semiconductor thin film and transistor using the same and methods of forming the same - An organic semiconductor compound based on a 2,7-bis-(vinyl)[1]benzothieno[3,2-b]benzothiophene backbone, an organic semiconductor thin film, an organic thin film transistor and methods of forming the same are provided, the organic semiconductor compound including a vinyl group derived from a phosphonate derivative represented by Formula 1 and an aldehyde derivative represented by Formula 2 below: | 2010-01-14 |
20100006831 | FULL COLOR ORGANIC ELECTROLUMINESCENT DEVICE - The present invention is directed to a full color organic electroluminescent device which comprises a substrate; a first electrode formed on the substrate; an organic emitting layer formed on the first electrode, and having a red-emitting layer, a green-emitting layer and a blue-emitting layer, respectively patterned in a red pixel region, a green pixel region and a blue pixel region, and having the red and green-emitting layer consisting of a phosphorescent material and the blue-emitting layer consisting of a fluorescent material; a hole blocking layer formed on the organic emitting layer as a common layer; and a second electrode formed on the hole blocking layer, so that the full color organic electroluminescent device having enhanced lifetime and luminous efficiency characteristics can be provided. | 2010-01-14 |
20100006832 | DISPLAY DEVICE AND MANUFACTURING METHOD THEREOF - According to an embodiment of the present invention, a manufacturing method of a display device includes forming a plurality of gate wires comprising a gate electrode on an insulating substrate, forming an electrode layer comprising a source electrode and a drain electrode spaced apart from each other to define a channel region on the gate electrode interposed therebetween, forming a first barrier wall having a first opening for exposing the channel region, a portion of the source electrode, and a portion of the drain electrode on the electrode layer where the first barrier wall has a surface, forming a shielding film to cover the channel region inside the first opening, treating the surface of the first barrier wall, removing the shielding film, and forming an organic semiconductor layer inside the first opening. | 2010-01-14 |
20100006833 | THIN FILM TRANSISTOR, METHOD OF MANUFACTURING THE SAME AND FLAT PANEL DISPLAY DEVICE HAVING THE SAME - A thin film transistor, a method of manufacturing the thin film transistor, and a flat panel display device including the thin film transistor. The thin film transistor includes: a gate electrode formed on a substrate; a gate insulating film formed on the gate electrode; an activation layer formed on the gate insulating film; a passivation layer including a compound semiconductor oxide, formed on the activation layer; and source and drain electrodes that contact the activation layer. | 2010-01-14 |
20100006834 | Channel layers and semiconductor devices including the same - Channel layers and semiconductor devices including the channel layers are disclosed. A channel layer may include a multi-layered structure. Layers forming the channel layer may have different carrier mobilities and/or carrier densities. The channel layer may have a double layered structure including a first layer and a second layer which may be formed of different oxides. Characteristics of the transistor may vary according to materials used to form the channel layers and/or thicknesses thereof. | 2010-01-14 |
20100006835 | DISPLAY SUBSTRATE - A display substrate includes; a substrate, a gate electrode arranged on the substrate, a semiconductor pattern arranged on the gate electrode, a source electrode arranged on the semiconductor pattern, a drain electrode arranged on the semiconductor pattern and spaced apart from the source electrode, an insulating layer arranged on, and substantially covering, the source electrode and the drain electrode to cover the source electrode and the drain electrode, a conductive layer pattern arranged on the insulating layer and overlapped aligned with the semiconductor pattern, a pixel electrode electrically connected to the drain electrode, and a storage electrode arranged on the substrate and overlapped overlapping with the pixel electrode, the storage electrode being electrically connected to the conductive layer pattern. | 2010-01-14 |
20100006836 | EPITAXIAL GROWTH METHOD, EPITAXIAL CRYSTAL STRUCTURE, EPITAXIAL CRYSTAL GROWTH APPARATUS, AND SEMICONDUCTOR DEVICE - It is provided a hetero epitaxial growth method, a hetero epitaxial crystal structure, a hetero epitaxial growth apparatus and a semiconductor device, the method includes forming a buffer layer formed with the orienting film of an oxide, or the orienting film of nitride on a heterogeneous substrate; and performing crystal growth of a zinc oxide based semiconductor layer on the buffer layer using a halogenated group II metal and an oxygen material. It is provided a homo epitaxial growth method, a homo epitaxial crystal structure, a homo epitaxial growth apparatus and a semiconductor device, the homo epitaxial growth method includes introducing reactant gas mixing zinc containing gas and oxygen containing gas on a zinc oxide substrate; and performing crystal growth of a zinc oxide based semiconductor layer on the zinc oxide substrate. It is provided a ZnO based semiconductor, a fabrication method for a ZnO based semiconductor, and an apparatus for fabricating a ZnO based semiconductor, and the method includes introducing reactant gas mixing halogenated group II metallic gas including zinc and oxygen containing gas on one of a substrate and a semiconductor layer; and introducing hydride gas of group V as p type impurity material gas on one of the substrate and the semiconductor layer, wherein crystal growth of the zinc oxide based semiconductor layer doped with a p type impurity is performed on one of the substrate and the semiconductor layer, preventing mixing of the impurity which is not aimed and doping a p type impurity enough also at high temperature. | 2010-01-14 |
20100006837 | COMPOSITION FOR OXIDE SEMICONDUCTOR THIN FILM, FIELD EFFECT TRANSISTOR USING THE COMPOSITION AND METHOD OF FABRICATING THE TRANSISTOR - Provided are a composition for an oxide semiconductor thin film, a field effect transistor using the same and a method of fabricating the field effect transistor. The composition includes an aluminum oxide, a zinc oxide, an indium oxide and a tin oxide. The thin film formed of the composition is in amorphous phase. The field effect transistor having an active layer formed of the composition can have an improved electrical characteristic and be fabricated by a low temperature process. | 2010-01-14 |
20100006838 | ACTIVE MATRIX SUBSTRATE, DISPLAY DEVICE, AND ACTIVE MATRIX SUBSTRATE INSPECTING METHOD - By feeding inspection signals independent from each other to upper first and second gate lead inspection lines ( | 2010-01-14 |
20100006839 | METHOD OF MANUFACTURING TFT SUBSTRATE AND TFT SUBSTRATE - In a method of manufacturing a TFT substrate in accordance with an exemplary aspect of the present invention, an intrinsic semiconductor film, an impurity semiconductor film, and a conductive film for source lines are formed in succession, and a resist having a thin-film portion and a thick-film portions is formed on the conductive film for source lines. Then, etching is performed by using the resist as a mask, and after that, a part of the conductive film for source lines is exposed by removing the thin-film portion of the resist. Next, the exposed conductive film for source lines is etched by using the thick-film portions of the resist a mask, so that the impurity semiconductor film is exposed. Then, by etching the exposed impurity semiconductor film, a back channel region of a TFT | 2010-01-14 |
20100006840 | MEMS/NEMS STRUCTURE COMPRISING A PARTIALLY MONOCRYSTALLINE ANCHOR AND METHOD FOR MANUFACTURING SAME - The invention relates to a method for producing a MEMS/NEMS structure from a substrate made in a monocrystalline semiconductor material, the structure comprising a flexible mechanical element connected to the substrate by at least one anchoring zone, the method comprising the following steps:
| 2010-01-14 |
20100006841 | DUAL METAL GATE TRANSISTOR WITH RESISTOR HAVING DIELECTRIC LAYER BETWEEN METAL AND POLYSILICON - Structures are presented including a high-k and metal gate transistor and a resistor where the resistor includes a dielectric layer between a metal and a polysilicon. The resistor provides typical polysilicon resistor performance with less cost and higher throughput. | 2010-01-14 |
20100006842 | ACTIVE MATRIX SUBSTRATE, METHOD FOR MANUFACTURE OF ACTIVE MATRIX SUBSTRATE, LIQUID CRYSTAL DISPLAY DEVICE, AND ELECTRONIC APPARATUS - An active matrix substrate ( | 2010-01-14 |
20100006843 | Polysilsesquioxane copolymer, polysilsesquioxane copolymer thin film including the same, organic light emitting diode display device including the same, and associated methods - A polysilsesquioxane copolymer, a polysilsesquioxane copolymer including the same, an organic light emitting diode display including the same, and associated methods, the polysilsesquioxane copolymer including a copolymer including repeating units derived from a first monomer selected from the group consisting of alkoxyphenyltrialkoxysilane, alkoxyphenylalkyltrialkoxysilane, alkoxycarbonylphenyltrialkoxysilane, and alkoxycarbonylphenylalkyltrialkoxysilane, and repeating units derived from a second monomer including an α,ω-bis(trialkoxysilyl) compound monomer. | 2010-01-14 |
20100006844 | THIN-FILM TRANSISTOR ARRAY PANEL AND METHOD OF FABRICATING THE SAME - A thin-film transistor (“TFT”) array and a method of fabricating the TFT array panel include: an insulating substrate; a gate line and a data line which are insulated from each other on the insulating substrate and are arranged in a lattice; common wiring extended parallel to the gate line on the insulating substrate; a gate insulating film disposed on the gate line and the common wiring; a semiconductor layer disposed on the gate insulating film; contact holes which penetrate through the gate insulating film and the semiconductor layer disposed on the common wiring; a plurality of common electrodes connected to the common wiring by the contact holes and arranged parallel to each other; and a plurality of pixel electrodes arranged parallel to the plurality of common electrodes. | 2010-01-14 |
20100006845 | LIGHT-EMITTING DEVICE AND ELECTRONIC DEVICE USING THE SAME - A lightweight flexible light-emitting device which is able to possess a curved display portion and display a full color image with high resolution and the manufacturing process thereof are disclosed. The light-emitting device comprises: a plastic substrate; an insulating layer with an adhesive interposed therebetween; a thin film transistor over the insulating layer; a protective insulating film over the thin film transistor; a color filter over the protective insulating film; and a white-emissive light-emitting element formed over and being in contact with the thin film transistor. | 2010-01-14 |
20100006846 | LIGHT-EMITTING DEVICE AND METHOD FOR MANUFACTURING THE SAME - The present invention provides a display device and a manufacturing method thereof that can simplify manufacturing steps and enhance efficiency in the use of materials, and further, a manufacturing method that can enhance adhesiveness of a pattern. One feature of the invention is that at least one or more patterns needed for manufacturing a display panel, such as a conductive layer forming a wiring or an electrode or a mask for forming a desired pattern is/are formed by a method capable of selectively forming a pattern, thereby manufacturing a display panel. | 2010-01-14 |
20100006847 | SEMICONDUCTOR DEVICE, DISPLAY APPARATUS, PHOTO-ELECTRICAL APPARATUS, AND METHOD FOR FABRICATING THE SAME - A semiconductor device and the method for fabricating the same are disclosed. The fabrication method includes forming a PMOS device and an NMOS device on a substrate, wherein the PMOS device includes a first poly-silicon island, a gate dielectric layer covering the first poly-silicon island, and a first gate on the gate dielectric layer. The method of fabrication the PMOS device includes performing a P-type ion implantation process on the first poly-silicon island to form a plurality of P-type heavily doped regions and a plurality of P-type lightly doped regions. The length of the channel region is substantially less than 3 micron, and the length of at least one of the P-type lightly doped regions substantially is 10%-80% of the length of the channel region. The P-type lightly doped regions are used to improve the short channel effect of the PMOS device. | 2010-01-14 |
20100006848 | SEMICONDUCTOR DEVICE - To improve the performance of a protection circuit including a diode formed using a semiconductor film. A protection circuit is inserted between two input/output terminals. The protection circuit includes a diode which is formed over an insulating surface and is formed using a semiconductor film. Contact holes for connecting an n-type impurity region and a p-type impurity region of the diode to a first conductive film in the protection circuit are distributed over the entire impurity regions. Further, contact holes for connecting the first conductive film and a second conductive film in the protection circuit are dispersively formed over the semiconductor film. By forming the contact holes in this manner wiring resistance between the diode and a terminal can be reduced and the entire semiconductor film of the diode can be effectively serve as a rectifier element. | 2010-01-14 |
20100006849 | Thin Film Transistors - A thin film transistor includes a layer structure having a gate electrode, a gate insulation layer and a channel layer. A source line may contact the channel layer, and may extend along a direction crossing over the gate electrode. The source line may partially overlap the gate electrode so that both sides of the source line overlapping the gate electrode may be entirely positioned between both sides of the gate electrode. A drain line may make contact with the channel layer and may be spaced apart from the source line by a channel length. The drain line may have a structure symmetrical to that of the source line. Overlap areas among the gate electrode, the source line and the drain line may be reduced, so that the thin film transistor may ensure a high cut-off frequency. | 2010-01-14 |
20100006850 | BEOL COMPATIBLE FET STRUCTURE - This invention provides structures and a fabrication process for incorporating thin film transistors in back end of the line (BEOL) interconnect structures. The structures and fabrication processes described are compatible with processing requirements for the BEOL interconnect structures. The structures and fabrication processes utilize existing processing steps and materials already incorporated in interconnect wiring levels in order to reduce added cost associated with incorporating thin film transistors in the these levels. The structures enable vertical (3D) integration of multiple levels with improved manufacturability and reliability as compared to prior art methods of 3D integration. | 2010-01-14 |
20100006851 | Thin film transistor and method of manufacturing the same - A thin film transistor comprises a substrate; a semiconductor layer disposed on the substrate, the semiconductor layer having a source region, a drain region, and a channel region between the source region and the drain region; a gate insulating layer disposed on the semiconductor layer and on the substrate; a gate electrode disposed on the insulating layer over the channel region; an passivation layer disposed on the gate electrode and the gate insulating layer; a source electrode disposed in contact with upper, lower and side surfaces of the source region via a first contact hole through passivation layer, the gate insulating layer and the semiconductor layer; and a drain electrode disposed in contact with upper, lower and side surfaces of the drain region via a second contact hole through the passivation layer, the gate insulating layer and the semiconductor layer. | 2010-01-14 |
20100006852 | Thin film transistor and method of fabricating the same - A thin film transistor includes a substrate; a semiconductor layer disposed on the substrate, the semiconductor layer having a source region, a drain region, and a channel region between the source region and the drain region; a gate insulating layer disposed on the semiconductor layer and on the substrate; and a gate electrode disposed on the insulating layer over the channel region, wherein the semiconductor layer includes tapered edge portions with a taper angle defined between the tapered edge portions and a surface of the substrate is less than about 30 degrees. | 2010-01-14 |
20100006853 | ELECTRONIC DEVICE AND METHOD OF MANUFACTURING THE SAME - An electronic device includes: a substrate; and a plurality of thin film transistors disposed in lines at least in one direction in terms of planar view when viewed from one principal surface of the substrate; each of the plurality of thin film transistors including a preliminary heating layer on the substrate, an insulating layer on the preliminary heating layer, and a thin film semiconductor layer a part of which overlaps the preliminary heating layer through the insulating film, wherein a portion of the preliminary heating layer other than the portion overlapping the thin film semiconductor layer has a planar shape which is line-symmetrical with respect to an axis extending in a direction perpendicularly intersecting the one direction. | 2010-01-14 |
20100006854 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF - In a semiconductor device, typically an active matrix display device, the structure of TFTs arranged in the respective circuits are made suitable in accordance with the function of the circuit, and along with improving the operating characteristics and the reliability of the semiconductor device, the manufacturing cost is reduced and the yield is increased by reducing the number of process steps. A semiconductor device has a semiconductor layer, an insulating film formed contacting the semiconductor layer, and a gate electrode having a tapered portion on the insulating film, in the semiconductor device, the semiconductor layer has a channel forming region, a first impurity region for forming a source region or a drain region and containing a single conductivity type impurity element, and a second impurity region for forming an LDD region contacting the channel forming region, a portion of the second impurity region is formed overlapping a gate electrode, and the concentration of the single conductivity type impurity element contained in the second impurity region becomes larger with distance from the channel forming region. | 2010-01-14 |
20100006855 | THIN FILM TRANSISTOR, METHOD OF FABRICATING THE SAME, AND ORGANIC LIGHT EMITTING DIODE DISPLAY DEVICE INCLUDING THE THIN FILM TRANSISTOR - A thin film transistor (TFT), a method of fabricating the same, and an organic light emitting diode (OLED) display device having the TFT. The TFT includes: a substrate; a polycrystalline silicon (poly-Si) semiconductor layer disposed on the substrate, including source, drain, and channel regions, a crystallization-inducing metal, first gettering sites disposed on opposing edges of the semiconductor layer, and a second gettering site spaced apart from the first gettering sites; a gate insulating layer disposed on the semiconductor layer; a gate electrode disposed on the gate insulating layer; an interlayer insulating layer disposed on the gate electrode; and source and drain electrodes disposed on the interlayer insulating layer and electrically connected to the source and drain regions of the semiconductor layer. | 2010-01-14 |
20100006856 | PROCESS FOR MANUFACTURING A THIN-FILM TRANSISTOR (TFT) DEVICE AND TFT DEVICE MANUFACTURED BY THE PROCESS - A process for manufacturing a thin-film transistor device includes forming a dielectric insulation layer on a substrate, forming an amorphous silicon layer on the dielectric insulation layer, crystallizing the amorphous silicon layer, so as to obtain polycrystalline silicon, forming gate structures on the polycrystalline silicon, and forming first doped regions within the polycrystalline silicon laterally with respect to the gate structures. The crystallizing step includes forming first capping dielectric regions on the amorphous silicon layer, and then irradiating the amorphous silicon layer using a laser so as to form active areas of polycrystalline silicon separated by separation portions of amorphous silicon underlying the first capping dielectric regions. | 2010-01-14 |
20100006857 | MULTILAYER STRUCTURE AND FABRICATION THEREOF - A process for fabricating a multilayer structure is provided as well as the structure itself. In accordance with one embodiment, the process includes growing a growth layer on a silicon substrate by epitaxial growth, forming at least one pattern from the growth layer, depositing an oxide layer on the silicon substrate, transferring a silicon active layer onto the oxide layer, forming a cavity in the silicon active layer oxide layer above the pattern, and growing a III-V material in the cavity. | 2010-01-14 |