03rd week of 2015 patent applcation highlights part 17 |
Patent application number | Title | Published |
20150014641 | ORGANIC LIGHT EMITTING DIODE DISPLAY - An organic light emitting diode (OLED) display according to the present invention includes a substrate; a driving gate electrode formed on the substrate; and a first gate insulating layer covering the substrate and the driving gate electrode. A semiconductor layer formed on the first gate insulating layer and including a switching semiconductor layer and a driving semiconductor layer separated from each other. A second gate insulating layer disposed covering the semiconductor layer. A switching gate electrode formed on the second gate insulating layer and overlapping the switching semiconductor layer. An interlayer insulating layer is disposed covering the switching gate electrode and the second gate insulating layer, wherein a thickness of the first gate insulating layer is thicker a thickness of the second gate insulating layer. | 2015-01-15 |
20150014642 | DONOR SUBSTRATE AND METHOD FOR MANUFACTURING ORGANIC LIGHT EMITTING DIODE DISPLAY - A donor substrate for a laser transfer includes a base layer, a primer layer disposed on the base layer, a light-to-heat conversion layer disposed on the primer layer, and an intermediate layer disposed on the light-to-heat conversion layer, where the light-to-heat conversion layer includes graphene. | 2015-01-15 |
20150014643 | DONOR SUBSTRATE FOR TRANSFER AND MANUFACTURING METHOD OF ORGANIC LIGHT EMITTING DIODE DISPLAY - A donor substrate includes: a support layer; a first light absorption layer disposed on the support layer; a buffer layer disposed on the first absorption layer; a second light absorption layer disposed on the buffer layer; and a transfer layer disposed on the second absorption layer, wherein the buffer layer includes a transparent oxide film. | 2015-01-15 |
20150014644 | DISPLAY DEVICE AND METHOD OF MANUFACTURING THE SAME - A display device includes a bottom member, a display panel, a top member and a groove region. The display panel is disposed on the bottom member, and includes an organic layer. The top member is disposed on the display panel. The groove region is formed by removing at least one of the top member or the bottom member at a bending region of the display device. | 2015-01-15 |
20150014645 | ORGANIC LIGHT-EMITTING DEVICE - An organic light-emitting device including a first electrode; a second electrode facing the first electrode; an emission layer between the first electrode and the second electrode; a first hole transport layer between the first electrode and the emission layer; and a second hole transport layer between the first hole transport layer and the emission layer, wherein the first hole transport layer includes a first compound represented by Formula 1 and the second hole transport layer includes a second compound represented by Formula 2: | 2015-01-15 |
20150014646 | ORGANIC LIGHT-EMITTING DISPLAY APPARATUS AND RELATED MANUFACTURING METHOD - An organic light emitting display apparatus includes a substrate and includes an organic light emitting device that overlaps the substrate and includes an organic layer. The organic light emitting display apparatus further includes a planarization layer that overlaps the organic light emitting device and includes an organic material, wherein the organic light emitting device is disposed between the substrate and the planarization layer. The organic light emitting display apparatus further includes an encapsulation layer that overlaps the planarization layer and includes an inorganic material, wherein the planarization layer is disposed between the organic light emitting device and a portion of the encapsulation layer. The organic light emitting display apparatus further includes an intermediate layer that is disposed between the planarization layer and the portion of the encapsulation layer. | 2015-01-15 |
20150014647 | ORGANIC LIGHT EMITTING DISPLAY APPARATUS - An organic light emitting display apparatus having improved impact resistance includes a bottom substrate including a display area and a peripheral area surrounding the display area; a plurality of organic light emitting devices arranged in the display area of the bottom substrate; a top substrate corresponding to the bottom substrate; a sealing member, which is arranged in the peripheral area of the bottom substrate and attaches the bottom substrate to the top substrate; and an anti-impact member, which is arranged in the peripheral area of the bottom substrate, is apart from the sealing member, and protrudes from the bottom substrate toward the top substrate. | 2015-01-15 |
20150014648 | ORGANIC LIGHT-EMITTING DISPLAY APPARATUS AND METHOD OF MANUFACTURING THE SAME - An organic light-emitting display apparatus includes a substrate; a device/wiring layer formed on the substrate, including a plurality of thin film transistors (TFTs); an emitting layer formed on the device/wiring layer, including a lower electrode of a capacitor and a plurality of organic light-emitting diodes (OLEDs); an encapsulating layer formed to cover the emitting layer; and an upper electrode of the capacitor formed on the encapsulating layer. | 2015-01-15 |
20150014649 | Organic Light Emitting Diode Materials - The present invention relates to novel organic compounds containing a triphenylene and a carbazole. The compounds are useful for organic light-emitting diodes. The compounds are also useful for charge-transport and charge-blocking layers, and as hosts in the light-emissive layer for organic light emitting devices (OLEDs). | 2015-01-15 |
20150014650 | ORGANIC LIGHT EMITTING DIODE DISPLAY - An organic light emitting diode (OLED) display includes a transmission region and a reflection region. When external light is incident on the OLED display, a reflection rate of the external light of the reflection region is proportional to luminance of the transmission region. The transmission region includes a pixel electrode, an organic emission layer, and a common electrode. The transmission region is configured to transmit light emitted from the organic emission layer to a first direction. The reflection region includes a control electrode, liquid crystal capsules, and the common electrode. The reflection region is configured to reflect the external light to the first direction. | 2015-01-15 |
20150014651 | ORGANIC LIGHT EMITTING DIODE AND ORGANIC LIGHT EMITTING DISPLAY APPARATUS HAVING THE SAME - An organic light emitting diode includes a hole injection layer, a hole transport layer, an emission layer, an electron transport layer and an electron injection layer. The hole transport layer is disposed on the hole injection layer. The emission layer is disposed on the hole transport layer. The electron transport layer is disposed on the emission layer and including at least one selected from an anthracene derivative and a pyrene derivative. The electron injection layer is disposed on the electron transport layer. The organic light emitting diode includes a material that electron mobility is lower than a traditional material of the electron transport layer. Thus, a stain and a roll-off phenomenon in the low gray scale area may be improved. | 2015-01-15 |
20150014652 | METHOD OF FABRICATING A SPUTTERING TARGET, SPUTTERING TARGET FABRICATED BY USING THE METHOD, AND AN ORGANIC LIGHT-EMITTING DISPLAY APPARATUS FABRICATED USING THE SPUTTERING TARGET - A method of fabricating a sputtering target, a sputtering target fabricated by the method, and an organic light-emitting display apparatus fabricated by using the sputtering target. The sputtering target may be used for forming a thin film encapsulation layer. The sputtering target includes tin oxide as a main component, and a copper fluoride compound as a dopant. | 2015-01-15 |
20150014653 | ORGANIC LIGHT EMITTING DISPLAY APPARATUS AND METHOD OF MANUFACTURING THE SAME - Provided is an organic light emitting display apparatus. The apparatus may include a substrate including a display region where an image is realized and a non-display region surrounding the display region. The apparatus includes an organic light emitting unit including a first electrode, an intermediate layer, and a second electrode, which are disposed in the display region and are sequentially stacked on the substrate. The apparatus also includes a first inorganic film including a first low temperature viscosity transition (LVT) inorganic material having a first viscosity transition temperature, and covering the organic light emitting unit; and a second inorganic film including a second LVT inorganic material having a second viscosity transition temperature lower than the first viscosity transition temperature, and formed in the non-display region. | 2015-01-15 |
20150014654 | SYSTEM AND METHOD FOR PRODUCING ELECTROLUMINESCENT DEVICES - The present disclosure provides an electroluminescent device comprising a light-emitting layer containing a blue or a blue-green fluorescent light emitting material that is comprised of a dialkyl-gallium moiety coordinated to a bidentate nitrogen bonding chelating ligand to form a gallium containing 6-membered heteroatom ring. The invention also provides a display or area lighting device including the OLED device, a process for emitting light, and a dialkyl-gallium chelate complex. The device provides unexpected and useful light emissions in the blue and green regions of the visible spectrum. | 2015-01-15 |
20150014655 | ORGANIC LIGHT-EMITTING DISPLAY DEVICE - An organic light-emitting display device includes first through third pixels, wherein each of the first through third pixels comprises a first electrode, a second electrode which faces the first electrode, an organic light-emitting layer which is disposed between the first electrode and the second electrode. The first pixel includes a first color filter material, the second pixel includes a second color filter material, and the third pixel includes a third color filter material. The third pixel comprises a first transmitting region in which the third color filter material is not disposed and which is configured to allow a substantial amount of light emitted from the organic light-emitting layer of the third pixel to transmit therethrough. | 2015-01-15 |
20150014656 | COMPOUND FOR ORGANIC OPTOELECTRONIC DEVICE ORGANIC LIGHT EMITTING DIODE INCLUDING THE SAME AND DISPLAY INCLUDING THE ORGANIC LIGHT EMITTING DIODE - A compound for an organic optoelectronic device is represented by the following Chemical Formula 1. | 2015-01-15 |
20150014657 | ORGANIC LIGHT EMITTING DEVICE - An organic light emitting device includes a first electrode and a second electrode facing to each other; and an organic layer between first electrode and the second electrode. The organic layer includes an assistance layer on the first electrode and an emission layer on the assistance layer. The assistance layer includes a compound represented by Chemical Formula 1: | 2015-01-15 |
20150014658 | ORGANIC LIGHT EMITTING DIODE DISPLAY AND METHOD FOR MANUFACTURING THE SAME - Disclosed are an organic light emitting diode display and a method for manufacturing the same. The organic light emitting diode display includes: a driving switching element; a pixel electrode connected with the driving switching element; an auxiliary electrode separated from the pixel electrode and positioned in a same layer as the pixel electrode; an organic common layer positioned on the pixel electrode and the auxiliary electrode and including a contact hole positioned on the auxiliary electrode; and a common electrode positioned on the organic common layer and connected with the auxiliary electrode through the contact hole; and the auxiliary electrode includes a light absorbing layer. | 2015-01-15 |
20150014659 | IRIDIUM COMPLEX AND ORGANIC LIGHT-EMITTING DEVICE INCLUDING THE SAME - An organic light-emitting device including an iridium complex represented by Formula 1: | 2015-01-15 |
20150014660 | ORGANIC LIGHT EMITTING DISPLAY PANEL AND ORGANIC LIGHT EMITTING DISPLAY DEVICE HAVING THE SAME - An organic light emitting display panel includes a substrate, an organic light emitting diode disposed on a first side of the substrate, and a first light scattering layer disposed on a second side of the substrate opposite to the first side of the substrate, where the first light scattering layer includes a transparent thin layer including an indium, and a plurality of first micro-lenses is disposed on a plasma-treated side of the first light scattering layer. | 2015-01-15 |
20150014661 | ORGANIC LIGHT EMITTING DISPLAY DEVICE AND METHOD OF MANUFACTURING AN ORGANIC LIGHT EMITTING DISPLAY DEVICE - A organic light emitting display device including a first substrate on which red, green, and blue pixels are formed, the red, green, and blue pixels display including a plurality of first electrodes disposed corresponding to the red, green, and blue pixels, respectively, a plurality of organic light emitting structures emitting white light disposed above the first electrodes, respectively, a plurality of second electrodes respectively disposed on the organic light emitting structures, and a plurality of secondary transparent electrodes disposed between the first electrodes and the organic light emitting structures. The secondary transparent electrodes have different thicknesses from each other by a printing process such that red light, green light, and blue light are respectively emitted by the red, green, and blue pixels when the white light causes resonance to occur between the first electrodes and the second electrodes. | 2015-01-15 |
20150014662 | METHOD FOR PIXEL ARRANGEMENT AND DISPLAY PANNEL USING THE SAME - One embodiment of the present invention discloses a method for pixel arrangement and a display using the same. The display areas are divided into a plurality of rectangular regions which have the same area according to a plurality of vertical grids which own the same distance between the adjacent. According to pre-positioning horizontal axis lines and pre-positioning vertical axis lines, each of the rectangular regions is divided into four parts including an upper left part, an upper right part, a lower left part and a lower right part. Each of the four parts are divided into two sub-pixel areas by a line which is inside the part. The line connects the angle point of the region which the part belongs to and the cross point of the horizontal axis line and the vertical axis line of the region which the part belongs to. | 2015-01-15 |
20150014663 | ORGANIC LIGHT EMITTING DISPLAY APPARATUS AND THE METHOD FOR MANUFACTURING THE SAME - Provided is an organic light-emitting display apparatus including a hybrid protective film. The organic light-emitting display apparatus includes a substrate, a display unit disposed on the substrate and including an organic light-emitting device (OLED), and an encapsulation unit encapsulating the display unit and including the hybrid protective film. The hybrid protective film includes an inorganic part layer where carbon is removed, an organic part layer where carbon is contained in a predetermined amount, and a gradient part layer disposed between the inorganic part layer and the organic part layer and increasing an amount of carbon as being more contiguous to the organic part layer. | 2015-01-15 |
20150014664 | Semiconductor Device and Method of Manufacturing Same - A FET is formed on a semiconductor substrate, a curved surface having a radius of curvature is formed on an upper end of an insulation, a portion of a first electrode is exposed corresponding to the curved surface to form an inclined surface, and a region defining a luminescent region is subjected to etching to expose the first electrode. Luminescence emitted from an organic chemical compound layer is reflected by the inclined surface of the first electrode to increase a total quantity of luminescence taken out in a certain direction. | 2015-01-15 |
20150014665 | Light Emitting Device - An objective is to increase the reliability of a light emitting device structured by combining TFTs and organic light emitting elements. A TFT ( | 2015-01-15 |
20150014666 | AROMATIC AMINE DERIVATIVE AND ORGANIC ELECTROLUMINESCENT ELEMENT USING SAME - An aromatic amine derivative is represented by a formula (1) below. In the formula (1), R | 2015-01-15 |
20150014667 | OLED DEVICE AND MANUFACTURING METHOD THEREOF, DISPLAY APPARATUS - An OLED device, comprising: a first electrode ( | 2015-01-15 |
20150014668 | RADIATION-EMITTING ORGANIC COMPONENT - The invention relates to a radiation-emitting, organic component comprising a radiation-permeable carrier body ( | 2015-01-15 |
20150014669 | METAL COMPLEX AND LIGHT-EMITTING DEVICE CONTAINING THE METAL COMPLEX - A metal complex exhibits blue light emission of high color purity and has a color purity of small temperature dependence, particularly in the blue region. Specifically, the metal complex is represented by Formula (1a): | 2015-01-15 |
20150014670 | ELECTROLUMINESCENCE FROM A PLURALITY OF ELECTROLUMINESCENT ZONES IN A LATERALLY SEPARATED ARRANGEMENT - A white light emitting device having an anode and a cathode and therebetween an organic electroluminescent layer which emits white light on the provision of a current between the anode and the cathode, said organic electroluminescent layer comprising a plurality of electroluminescent zones in laterally separated arrangement, the first of said electroluminescent zones comprising a first polymer and the second of said electroluminescent zones comprising a second polymer, wherein the first polymer comprises a fluorescent blue light emitting species and the second polymer comprises a fluorescent green light emitting species, said first and/or second zones further comprising a phosphorescent red light emitting species, such that together with the blue emitting species results in the emission of white light, said first and second polymers being physically incompatible so that separation of the zones pertains. | 2015-01-15 |
20150014671 | ANTHRACENE DERIVATIVE AND ORGANIC ELECTROLUMINESCENT ELEMENT USING THE SAME - This organic electroluminescent element is manufactured by using an anthracene derivative having a pyridyl aryl group substituted with an alkyl represented by formula (1) as an electron transport material, and satisfies characteristics such as the following in an adequate and well-balanced manner: improves the external quantum efficiency of the light-emitting element, which is generally required by the electron transport material; reduces the drive voltage of the light-emitting element; and increases the life of the element. (In formula (1), Ar is a divalent or trivalent benzene or naphthalene; R is hydrogen or an alkyl with a carbon number of 1 to 6, but all of the Rs never simultaneously form hydrogen; and R | 2015-01-15 |
20150014672 | COMPOSITE SUBSTRATE, MANUFACTURING METHOD OF THE SAME AND ORGANIC ELECTROLUMINESCENCE DEVICE - A composite substrate includes a moisture-proof substrate, and a resin substrate pasted on a surface of the moisture-proof substrate. The resin substrate is formed to be smaller than the moisture-proof substrate in planar view. An end side of the resin substrate is an inclined face that is inclined inward. In an organic electroluminescence device, an organic light-emitting multilayer provided on a surface of the resin substrate is sealed with a sealing member. A moisture-proof film coats at least part of the surface of the resin substrate in which no lead-out electrode is formed. | 2015-01-15 |
20150014673 | NOVEL CHALCOGEN-CONTAINING ORGANIC COMPOUND AND USE THEREOF - [Problem] To provide an organic compound that is easy to synthesize, and has excellent chemical stability, semiconductor characteristics (high carrier mobility) and high solubility in a solvent. | 2015-01-15 |
20150014674 | ORGANIC LIGHT-EMITTING DIODE - In at least one embodiment of the organic light-emitting diode ( | 2015-01-15 |
20150014675 | BLUE LUMINESCENT COMPOUNDS - There is provided a compound having Formula I | 2015-01-15 |
20150014676 | III-N MATERIAL GROWN ON REN EPITAXIAL BUFFER ON Si SUBSTRATE - A method of growing III-N material on a silicon substrate includes the steps of epitaxially growing a single crystal rare earth oxide on a silicon substrate, epitaxially growing a single crystal rare earth nitride on the single crystal rare earth oxide, and epitaxially growing a layer of single crystal III-N material on the single crystal rare earth nitride. | 2015-01-15 |
20150014677 | THIN FILM TRANSISTOR SUBSTRATE AND METHOD OF MANUFACTURING THE SAME - A thin film transistor substrate includes an active pattern which is disposed on a base substrate and includes a channel, a source electrode and a drain electrode, the channel which includes an oxide semiconductor, the source electrode and the drain electrode connected the channel, a gate electrode overlapped with the channel, a passivation layer which covers the source electrode, the drain electrode and the gate electrode and a fluorine deposition layer disposed between the active pattern and the passivation layer. | 2015-01-15 |
20150014678 | SEMICONDUCTOR DEVICE, METHOD OF MANUFACTURING THE SAME AND SYSTEM FOR MANUFACTURING THE SAME - A method of manufacturing a semiconductor device, the method includes: providing a gate electrode on a substrate; providing a first interlayer insulating layer to cover the gate electrode on the substrate; providing an oxide semiconductor layer corresponding to the gate electrode on the first interlayer insulating layer; providing a source electrode and a drain electrode, which are in contact with the oxide semiconductor layer, on the first interlayer insulating layer; and heat-treating the oxide semiconductor layer using Joule heat generated therein from a flow of a drain current by applying a voltage to the source electrode or the drain electrode. | 2015-01-15 |
20150014679 | SEMICONDUCTOR DEVICE - To give favorable electrical characteristics to a semiconductor device. The semiconductor device includes an insulating layer, a semiconductor layer over the insulating layer, a pair of electrodes over the semiconductor layer and each electrically connected to the semiconductor layer, a gate electrode over the semiconductor layer, and a gate insulating layer between the semiconductor layer and the gate electrode. The insulating layer includes an island-shaped projecting portion. A top surface of the projecting portion of the insulating layer is in contact with a bottom surface of the semiconductor layer, and is positioned on an inner side of the semiconductor layer when seen from above. The pair of electrodes covers part of a top surface and part of side surfaces of the semiconductor layer. Furthermore, the gate electrode and the gate insulating layer cover side surfaces of the projecting portion of the insulating layer. | 2015-01-15 |
20150014680 | SEMICONDUCTOR DEVICE AND DISPLAY DEVICE INCLUDING THE SEMICONDUCTOR DEVICE - A semiconductor device including a transistor and a connection portion is provided. The transistor includes a gate electrode, a first insulating film over the gate electrode, an oxide semiconductor film over the first insulating film and at a position overlapping with the gate electrode, and source and drain electrodes electrically connected to the oxide semiconductor film; and the connection portion includes a first wiring on the same surface as a surface on which the gate electrode is formed, a second wiring on the same surface as a surface on which the source and drain electrodes are formed, and a third wiring connecting the first wiring and the second wiring. The distance between an upper end portion and a lower end portion of the second wiring is longer than the distance between an upper end portion and a lower end portion of each of the source and drain electrodes. | 2015-01-15 |
20150014681 | DISPLAY DEVICE AND METHOD FOR MANUFACTURING DISPLAY DEVICE - A highly flexible display device and a method for manufacturing the display device are provided. A transistor including a light-transmitting semiconductor film, a capacitor including a first electrode, a second electrode, and a dielectric film between the first electrode and the second electrode, and a first insulating film covering the semiconductor film are formed over a flexible substrate. The capacitor includes a region where the first electrode and the dielectric film are in contact with each other, and the first insulating film does not cover the region. | 2015-01-15 |
20150014682 | SEMICONDUCTOR DEVICE - Disclosed is a semiconductor device in which the quality of an oxide semiconductor film is stabilized, while the property that an oxide semiconductor has high mobility is being utilized. The semiconductor device includes an oxide semiconductor layer and an electrode. The electrode is coupled to one surface of the oxide semiconductor layer. A portion of the oxide semiconductor layer, spanning from the one surface to a depth of t, becomes an ordered layer. The ordered layer is an area including a plurality of ordered regions in each of which the arrangement of atoms is compliant with a specific rule. The maximum width of the ordered region in a section in a direction perpendicular to the one surface is 2 nm or less. | 2015-01-15 |
20150014683 | SEMICONDUCTOR DEVICE - Stable electric characteristics and high reliability are provided to a miniaturized and integrated semiconductor device including an oxide semiconductor. In a transistor (a semiconductor device) including an oxide semiconductor film, the oxide semiconductor film is provided along a trench (groove) formed in an insulating layer. The trench includes a lower end corner portion having a curved shape with a curvature radius of longer than or equal to 20 nm and shorter than or equal to 60 nm, and the oxide semiconductor film is provided in contact with a bottom surface, the lower end corner portion, and an inner wall surface of the trench. The oxide semiconductor film includes a crystal having a c-axis substantially perpendicular to a surface at least over the lower end corner portion. | 2015-01-15 |
20150014684 | SEMICONDUCTOR DEVICE, MEASUREMENT APPARATUS, AND MEASUREMENT METHOD OF RELATIVE PERMITTIVITY - The field of an oxide semiconductor has been attracted attention in recent years. Therefore, the correlation between electric characteristics of a transistor including an oxide semiconductor layer and physical properties of the oxide semiconductor layer has not been clear yet. Thus, a first object is to improve electric characteristics of the transistor by control of physical properties of the oxide semiconductor layer. A semiconductor device including at least a gate electrode, an oxide semiconductor layer, and a gate insulating layer sandwiched between the gate electrode and the oxide semiconductor layer, where the oxide semiconductor layer has the relative permittivity of equal to or higher than 13 (or equal to or higher than 14), is provided. | 2015-01-15 |
20150014685 | SEMICONDUCTOR DEVICE - An object is to miniaturize a semiconductor device. Another object is to reduce the area of a driver circuit of a semiconductor device including a memory cell. The semiconductor device includes an element formation layer provided with at least a first semiconductor element, a first wiring provided over the element formation layer, an interlayer film provided over the first wiring, and a second wiring overlapping with the first wiring with the interlayer film provided therebetween. The first wiring, the interlayer film, and the second wiring are included in a second semiconductor element. The first wiring and the second wiring are wirings to which the same potentials are supplied. | 2015-01-15 |
20150014686 | FAST TESTING SWITCH DEVICE AND THE CORRESPONDING TFT-LCD ARRAY SUBSTRATE - A fast testing switch device arranged on a TFT-LCD array substrate is disclosed. The fast testing switch device switches the testing signals for testing a display area of the TFT-LCD array substrate. The fast testing switch device includes at least a first switch TFT. The gate of the first switch TFT connects to one control chip and a testing block for receiving the switch control signals from the testing block or the turn-off control signals from the control chip. The source of the first switch TFT connects to one data testing line or one gate testing line, and the drain of the first switch TFT connects to the corresponding data line or gate line of the display area. In addition, a corresponding TFT-LCD array substrate is also disclosed. The above configuration not only can achieve the narrow-bezel design but also can enhance the yield rate of the TFT-LCD array substrate. | 2015-01-15 |
20150014687 | SEMICONDUCTOR DEVICE - A semiconductor device includes an N-type semiconductor region, a back electrode, first and second P-type base regions, first and second N | 2015-01-15 |
20150014688 | Thin Wafer Handling and Known Good Die Test Method - A method of attaching a microelectronic element to a substrate can include aligning the substrate with a microelectronic element, the microelectronic element having a plurality of spaced-apart electrically conductive bumps each including a bond metal, and reflowing the bumps. The bumps can be exposed at a front surface of the microelectronic element. The substrate can have a plurality of spaced-apart recesses extending from a first surface thereof. The recesses can each have at least a portion of one or more inner surfaces that are non-wettable by the bond metal of which the bumps are formed. The reflowing of the bumps can be performed so that at least some of the bond metal of each bump liquefies and flows at least partially into one of the recesses and solidifies therein such that the reflowed bond material in at least some of the recesses mechanically engages the substrate. | 2015-01-15 |
20150014689 | ELEVATED POCKET PIXELS, IMAGING DEVICES AND SYSTEMS INCLUDING THE SAME AND METHOD OF FORMING THE SAME - An elevated photosensor for image sensors and methods of forming the photosensor. The photosensor may have light sensors having indentation features including, but not limited to, v-shaped, u-shaped, or other shaped features. Light sensors having such an indentation feature can redirect incident light that is not absorbed by one portion of the photosensor to another portion of the photosensor for additional absorption. In addition, the elevated photosensors reduce the size of the pixel cells while reducing leakage, image lag, and barrier problems. | 2015-01-15 |
20150014690 | TFT-LCD ARRAY SUBSTRATE AND DISPLAY DEVICE - A TFT-LCD array substrate is disclosed. The TFT-LCD array substrate includes a substrate and a thin film transistor (TFT) on the substrate, at least one pixel electrode, and a passivation layer. The passivation layer covers the gate insulation layer. The pixel electrode is arranged on the passivation layer. At least one portion between the gate insulation layer and the substrate is arranged with common electrode lines. At least one data line is arranged between the gate insulation layer and the passivation layer. The data line is arranged on the common electrode line. The common electrode line blocks the data line. In addition, a corresponding liquid crystal device is also disclosed. With the TFT-LCD array substrate and the liquid crystal device, not only the light leakage is avoided, but also the crosstalk resulting from the light leakage is also avoided. | 2015-01-15 |
20150014691 | SEMICONDUCTOR DEVICE COMPRISING A SECOND ORGANIC FILM OVER A THIRD INSULATING FILM WHEREIN THE SECOND ORGANIC FILM OVERLAPS WITH A CHANNEL FORMATION REGION AND A SECOND CONDUCTIVE FILM - In an active matrix type liquid crystal display device, in which functional circuits such as a shift register circuit and a buffer circuit are incorporated on the same substrate, an optimal TFT structure is provided along with the aperture ratio of a pixel matrix circuit is increased. There is a structure in which an n-channel TFT, with a third impurity region which overlaps a gate electrode, is formed in a buffer circuit, etc., and an n-channel TFT, in which a fourth impurity region which does not overlap the gate electrode, is formed in a pixel matrix circuit. A storage capacitor formed in the pixel matrix circuit is formed by a light shielding film, a dielectric film formed on the light shielding film, and a pixel electrode. Al is especially used in the light shielding film, and the dielectric film is formed anodic oxidation process, using an Al oxide film. | 2015-01-15 |
20150014692 | Array Substrate, Manufacturing Method Thereof, And Display Device - Embodiments of the present invention provide an array substrate, a manufacturing method thereof, and a display device. The array substrate comprises: a pixel region, a data-line pad region and a gate-line pad region; the pixel region comprises: a pixel electrode, a gate electrode of a TFT, source and drain electrodes of the TFT, a connection electrode, and a common electrode; the data-line pad region comprises: an insulating layer, a semiconductor layer, a data line, and a data-line connection pad; the data line and the source and drain electrodes are of a same layer and a same material; and the gate-line pad region comprises: a gate line, an insulating layer, and a gate-line connection pad; the gate line and the gate electrode are of a same layer and a same material; and the gate-line connection pad and the source and drain electrodes are of a same layer and a same material. The array substrate can reduce the number of masks and exposure times, thereby reducing manufacturing costs and improving production efficiency. | 2015-01-15 |
20150014693 | DISPLAY SUBSTRATE AND METHOD OF MANUFACTURING THE SAME - A display substrate is provided. The display substrate includes a switching element disposed on a base substrate, wherein the switching element comprises a gate electrode, an active pattern, a source electrode, and a drain electrode. The display substrate also includes a first electrode disposed on a same layer as the gate electrode, wherein the first electrode includes a wire grid pattern; and a second electrode overlapping the first electrode. | 2015-01-15 |
20150014694 | Pixel Structure, Array Substrate and Display Device - A pixel structure, an array substrate and a display device are provided. The invention relates to the field of liquid crystal display technology, and can solve the problem of large shadow zones formed between slit electrodes in the existing pixel structure. The pixel structure of the invention comprises a slit electrode and a plate electrode. The slit electrode includes at least two layers, each of which includes a plurality of strip-shaped electrode sections and a plurality of slits located between the adjacent electrode sections, the electrode sections in an upper layer are positioned over the slits in a lower layer, projections of the electrode sections in the layers on a substrate are not overlapped with each other, and the layers are separated from each other by a first insulation layer. The plate electrode is provided under the slit electrode and separated from the slit electrode by a second insulation layer. | 2015-01-15 |
20150014695 | CONTACTS FOR AN N-TYPE GALLIUM AND NITROGEN SUBSTRATE FOR OPTICAL DEVICES - A method for fabricating LED devices. The method includes providing a gallium and nitrogen containing substrate member (e.g., GaN) comprising a backside surface and a front side surface. The method includes subjecting the backside surface to a polishing process, causing a backside surface to be characterized by a surface roughness, subjecting the backside surface to an anisotropic etching process exposing various crystal planes to form a plurality of pyramid-like structures distributed spatially in a non-periodic manner on the backside surface, treating the backside surface comprising the plurality of pyramid-like structures, to a plasma species, and subjecting the backside surface to a surface treatment. The method further includes forming a contact material comprising an aluminum bearing species or a titanium bearing species overlying the surface-treated backside to form a plurality of LED devices with the contact material. | 2015-01-15 |
20150014696 | GALLIUM NITRIDE POWER SEMICONDUCTOR DEVICE HAVING A VERTICAL STRUCTURE - A semiconductor device includes a substrate having first and second sides and a first active layer disposed over the first side of the substrate. A second active layer is disposed on the first active layer. The second active layer has a higher bandgap than the first active layer such that a two-dimensional electron gas layer arises between the first active layer and the second active layer. At least one trench extends through the first and second active layers and the two-dimensional electron gas layer and into the substrate. A conductive material lines the trench. A first electrode is disposed on the second active layer and a second electrode is disposed on the second side of the substrate. | 2015-01-15 |
20150014697 | LIGHT EMITTING DEVICE AND METHOD FOR MAKING THE SAME - A light emitting device comprises a substrate, a semiconductor body, and a transition layer. The semiconductor body is configured to generate light and comprises an n-type layer disposed on the substrate, a p-type layer disposed on the n-type layer, and an active layer disposed between the n-type layer and the p-type layer. The transition layer is disposed on the substrate and located between the n-type layer and the substrate, and comprises a plurality of sub-layers. The plurality of the sub-layers comprise compositions different from each other, and each sub-layer comprise the composition including IIIA metal, transition metal, and nitrogen. The light emitting device further comprises a p-contact layer disposed on the p-type layer of the semiconductor body. A substrate structure and a method for making the light emitting device are also presented. | 2015-01-15 |
20150014698 | Integrated III-Nitride D-Mode HFET with Cascoded Pair Half Bridge - There are disclosed herein various implementations of a group III-V power conversion circuit including a monolithically integrated half bridge having a depletion mode III-Nitride field-effect transistor (FET), and a normally OFF composite cascoded switch including a depletion mode III-Nitride FET and an enhancement mode group IV FET. In one exemplary implementation, the monolithically integrated half bridge includes a high side depletion mode III-Nitride FET having an enable switch coupled in the conduction path of the high side depletion mode III-Nitride FET. | 2015-01-15 |
20150014699 | VERTICAL TRANSISTORS HAVING P-TYPE GALLIUM NITRIDE CURRENT BARRIER LAYERS AND METHODS OF FABRICATING THE SAME - A vertical transistor includes a drain electrode disposed on a first region of a substrate, a drift layer disposed on a second region of the substrate spaced apart from the first region, and P-type gallium nitride current barrier layers disposed on the drift layer and comprising a current aperture disposed between current barrier layers. A channel layer is disposed on the drift layer and the current barrier layers. A semiconductor layer is disposed on the channel layer and configured to induce formation of a two-dimension electron gas layer adjacent to a top surface thereof. Metal contact plugs are disposed in the channel layer and contact the current barrier layers. A source electrode is disposed on the contact plugs and the channel layer. A gate insulation layer and a gate electrode are sequentially disposed on a top surface of the semiconductor layer opposite to the channel layer. | 2015-01-15 |
20150014700 | VERTICAL III-NITRIDE SEMICONDUCTOR DEVICE WITH A VERTICALLY FORMED TWO DIMENSIONAL ELECTRON GAS - A HEMT device comprising a III-Nitride material substrate, the surface of which follows a plane that is not parallel to the C-plane of the III-Nitride material; an epitaxial layer of III-Nitride material grown on said substrate; a recess etched in said epitaxial layer, having at least one plane wall parallel to a polar plane of the III-Nitride material; a carrier supply layer formed on a portion of the plane wall of the recess, such that a 2DEG region is formed along the portion of the plane wall of the recess; a doped source region formed at the surface of said epitaxial layer such that the doped source region is separated from said 2DEG region by a channel region of the epitaxial layer; a gate insulating layer formed on the channel region of the epitaxial layer; and a gate contact layer formed on the gate insulating layer. | 2015-01-15 |
20150014701 | III-Nitride Semiconductor Device with Reduced Electric Field - A conductive field plate is formed between the drain electrode and gate of each cell of a III-Nitride semiconductor and is connected to the source electrode to reduce the electric field between the gate and the drain. The electrodes may be supported on N | 2015-01-15 |
20150014702 | LIGHT-EMITTING DIODE HAVING IMPROVED LIGHT EXTRACTION EFFICIENCY AND METHOD FOR MANUFACTURING SAME - Disclosed are a light-emitting diode having improved light extraction efficiency and a method for manufacturing same. This light-emitting diode includes: a gallium nitride substrate having an upper surface and a lower surface; and a gallium nitride semiconductor multilayer structure disposed on the lower surface of the substrate, and having a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer. Herein, the gallium nitride substrate has a main pattern having a protruding portion and a concave portion on the upper surface, and a rough surface formed on the protruding portion of the main pattern. The light-emitting diode is capable of improving light extraction efficiency through the upper surface thereof since the rough surface is formed along with the main pattern on the upper surface of the gallium nitride substrate. | 2015-01-15 |
20150014703 | III-NITRIDE Device with Solderable Front Metal - Some exemplary embodiments of a III-nitride power device including a HEMT with multiple interconnect metal layers and a solderable front metal structure using solder bars for external circuit connections have been disclosed. The solderable front metal structure may comprise a tri-metal such as TiNiAg, and may be configured to expose source and drain contacts of the HEMT as alternating elongated digits or bars. Additionally, a single package may integrate multiple such HEMTs wherein the front metal structures expose alternating interdigitated source and drain contacts, which may be advantageous for DC-DC power conversion circuit designs using III-nitride devices. By using solder bars for external circuit connections, lateral conduction is enabled, thereby advantageously reducing device Rdson. | 2015-01-15 |
20150014704 | Bipolar Transistor and a Method for Manufacturing a Bipolar Transistor - A bipolar transistor includes a semiconductor structure including an emitter area, a base area and a collector area. The emitter area is electrically connected to an emitter contact of the bipolar transistor. Further, the emitter area has a first conductivity type. The base area is electrically connected to a base contact of the bipolar transistor. Further, the base area has at least mainly a second conductivity type. The collector area is electrically connected to a collector contact of the bipolar transistor and has at least mainly the first conductivity type. Further, the collector area includes a plurality of enclosed sub areas having the second conductivity type or the base area includes a plurality of enclosed sub areas having the first conductivity type. | 2015-01-15 |
20150014705 | SEMICONDUCTOR DEVICE - An optical fiber is provided between a photodiode and a semiconductor active portion of a wide gap semiconductor element forming portion such that emitted light at the time of light emission of the semiconductor active portion of the wide gap semiconductor element forming portion is incident from an incident surface of the optical fiber, and is received from an emitting surface to the photodiode through the optical fiber. Specifically, the incident surface of the optical fiber is arranged so as to be opposed to a side surface portion of the wide gap semiconductor element forming portion, so that the emitted light at the time of light emission of the wide gap semiconductor element is incident on the incident surface. | 2015-01-15 |
20150014706 | Vertical Hetero Wide Bandgap Transistor - A vertical hetero transistor provides a wide bandgap, increases the breakdown voltage or reduces the on resistance of the switching transistor or both. | 2015-01-15 |
20150014707 | METHOD FOR PRODUCING A MOS STACK ON A DIAMOND SUBSTRATE - The invention relates to a method for producing a component comprising a conductive grid insulated from a semiconductor monocrystalline diamond substrate by an insulating region, comprising the following steps: a) oxygenating the surface of the substrate so as to replace the hydrogen surface terminations of the substrate with oxygen surface terminations; and b) forming the insulating region on the surface of the substrate by repeated monatomic layer deposition. | 2015-01-15 |
20150014708 | PACKAGE FOR LIGHT EMITTING AND RECEIVING DEVICES - In various embodiments, packages include one or more lighting devices having electrical contact points, a flexible substrate for supporting the lighting devices, a plurality of electrically conductive traces defined on the substrate and electrically connected to the contact points of the lighting devices, and an adhesive layer mounting each of the lighting devices on the substrate. | 2015-01-15 |
20150014709 | DISPLAY APPARATUS AND METHOD OF MANUFACTURING THE SAME - A display apparatus includes a first insulating substrate including a front surface that provides an image and a rear surface opposite to the front surface, a low reflection layer provided on the rear surface, a gate wiring part provided on the low reflection layer, a data wiring part provided on the rear surface, the data wiring part that is insulated from the gate wiring part; and a pixel which is connected to the data wiring part and displays the image, where the low reflection layer includes a polymer resin having a black color. | 2015-01-15 |
20150014710 | LIGHT EMITTING DEVICE - With a light emitting device of a package formed by two types of molded resins, entry of water from between the molded resins may cause the light emitting device to be incapable of turning on. A light emitting device of the present invention includes: a package that has an opening at an upper surface thereof; a first molded resin that forms a part of the upper surface of the package; a second molded resin that forms an inner wall surface of the opening of the package; a lead frame that is buried in the package so as to be partially exposed at a bottom surface of the opening of the package, the lead frame having an end portion externally projected outside from a side surface of the package; and a light emitting element that is connected to an upper surface of the lead frame being exposed at the bottom surface of the opening. The second molded resin is higher than the first molded resin in light reflectance to light emitted from the light emitting element. The upper surface of the lead frame buried in the package is disposed so as to be spaced apart from the interface between the first molded resin and the second molded resin. | 2015-01-15 |
20150014711 | OPTOELECTRONIC COMPONENT WITH INERT GAS ATMOSPHERE - Various embodiments relate to an optoelectronic component, including a carrier element, on which at least one optoelectronic semiconductor chip is arranged, and a cover, which is mounted on the carrier element in a region extending circumferentially around the semiconductor chip and together with the carrier element forms a sealed cavity in which the at least one optoelectronic semiconductor chip is arranged in an inert gas. | 2015-01-15 |
20150014712 | SOURCE DRIVER INTEGRATED CIRCUIT AND DISPLAY DEVICE COMPRISING SOURCE DRIVER INTEGRATED CIRCUIT - A source driver integrated circuit comprises a common node; a plurality of pads for inputting power, a portion of which are connected to an external power source and the remainder of which are connected to the portion through the common node; and a common power line which is connected to the plurality of power input pads through the common node. As a result, the resolution of adjacent channels varies very little and block dimming between channels can be resolved. | 2015-01-15 |
20150014713 | LIGHT EMITTING DEVICE AND LIGHTING APPARATUS INCLUDING THE SAME - A light emitting device is disclosed. The disclosed light emitting device includes a light emitting structure including a first-conductivity-type semiconductor layer, an active layer, and a second-conductivity-type semiconductor layer, a second electrode layer disposed beneath the light emitting structure and electrically connected to the second-conductivity-type semiconductor layer, a first electrode layer including a main electrode disposed beneath the second electrode layer, and at least one contact electrode branching from the main electrode and extending through the second electrode layer, the second-conductivity-type semiconductor layer and the active layer, to contact the first-conductivity-type semiconductor layer, and an insulating layer interposed between the first electrode layer and the second electrode layer and between the first electrode layer and the light emitting structure. The first-conductivity-type semiconductor layer includes a first region and a second region having a smaller height than the first region, and the first region overlaps with the contact electrode. | 2015-01-15 |
20150014714 | LIGHT EMITTING SEMICONDUCTOR - A light emitting semiconductor element includes at least two electrically conductive units, at least a light emitting semiconductor die and a light transmitting layer. A groove is located between the two electrically conductive units. The light emitting semiconductor die is cross over the electrically conductive units. The light transmitting layer covers the light emitting semiconductor and partially fills within the groove for linking the electrically conductive units. | 2015-01-15 |
20150014715 | WHITE LIGHT LED MODULE STRUCTURE INCLUDING ULTRAVIOLET LIGHT - A white light LED module structure including ultraviolet light comprises a white light LED module radiating a white light. An ultraviolet light LED chip is disposed in a packaging structure of the white light LED module. The ultraviolet light LED chip radiates an ultraviolet light. The white light and the ultraviolet light simultaneously illuminate an object. Alternatively, a white light LED module can be disposed for radiating a white light, and an ultraviolet light LED module can be disposed at one side of the white light LED module for radiating an ultraviolet light. The white light and the ultraviolet light simultaneously illuminate an object. The above-mentioned two methods allow an addition of an ultraviolet light wave band to the white light LED module, thereby activating fabrics containing fluorescent materials. | 2015-01-15 |
20150014716 | Display Device and Method for Producing a Display Device - A display device with a semiconductor layer sequence includes an active region provided for generating radiation and a plurality of pixels. The display device also includes a carrier. The active region is arranged between a first semiconductor layer and a second semiconductor layer. The semiconductor layer sequence includes at least one recess, which extends from a major face of the semiconductor layer sequence facing the carrier through the active region into the first semiconductor layer and is provided for electrical contacting of the first semiconductor layer. The carrier includes a plurality of switches, which are each provided for controlling at least one pixel. | 2015-01-15 |
20150014717 | LIGHT EMITTING DIODE PACKAGE - An embodiment of the invention provides a light emitting diode package. The light emitting diode package includes at least three light emitting diode chips; first leads comprising at least three chip mounting sections on which the at least three light emitting diode chips are mounted, respectively; second leads separated from the first leads and connected to the light emitting diode chips via wires, respectively; and a substrate having the first leads and the second leads formed thereon, wherein the at least three chip mounting sections are arranged around a center of the substrate through which an optical axis of the light emitting diode package passes. | 2015-01-15 |
20150014718 | NON-CHIP LED ILLUMINATION DEVICE - A non-chip LED illumination device includes a retaining layer having one or more chambers for engaging with light emitting diode elements each of which include an outer surface and two terminals disposed on the outer surface of the light emitting diode element. A covering layer is engaged onto the retaining layer and the light emitting diode element and includes one or more openings aligned with the light emitting diode elements respectively. One or more fluorescent members of different colors are engaged into the openings of the covering layer for allowing the light generated by the light emitting diode elements to emit through the fluorescent members of different colors. | 2015-01-15 |
20150014719 | LIGHT-EMITTING DIODE CHIP - A light-emitting diode chip includes an illuminating body and a first phosphor layer. The first phosphor layer is disposed on the illuminating body, and the first phosphor layer includes multiple first phosphor powder groups and multiple second phosphor powder groups. The illuminating body has a first emission wavelength, the first phosphor powder groups have a second emission wavelength, and the second phosphor powder groups have a third emission wavelength. The first wavelength is smaller than the second emission wavelength, and the second emission wavelength is smaller than the third emission wavelength. | 2015-01-15 |
20150014720 | LIGHT EMITTING DIODE PACKAGE STRUCTURE - A LED package structure including a carrier and a light emitting diode (LED) chip is provided. The LED chip includes a substrate, a patterned structure, a first semiconductor layer, an active layer and a second semiconductor layer. The substrate has a first surface and a second surface opposite to the first surface. The patterned structure is formed on the second surface of the substrate. The first semiconductor layer is disposed on the first surface of the substrate. The active layer is disposed on a portion of a surface of the first semiconductor layer, and other portion of the surface not covered by the active layer is exposed. The second semiconductor layer is disposed on the active layer. The LED chip is disposed on the carrier by way of flip-chip so that the first and the second semiconductor layers face towards the carrier. | 2015-01-15 |
20150014721 | LIGHT-EMITTING ELEMENT - A light-emitting element includes a light-emitting stack which has an active layer, and a non-oxide insulative layer below the light-emitting stack, wherein a refractive index of the non-oxide insulative layer is less than 1.4. | 2015-01-15 |
20150014722 | LED STRUCTURE, METALLIC FRAME OF LED STRUCTURE, AND CARRIER MODULE - A metallic frame of an LED structure includes two conductive frames spaced apart from each other with a gap and a plurality of extending arms respectively and integrally extended from the conductive frames. Each conductive frame includes a top surface, a bottom surface, and a lateral surface connecting the top and bottom surfaces. Each top surface comprises a sealed region and a mounting region surrounded by the sealed region, and the sealed and mounting regions of each conductive frame are defined by an insulating body. Each conductive frame has at least one slot concavely formed on the sealed region, and the lateral surface is formed with two openings and the slot is communicated with the two openings, such that the slot of each of the conductive frames is configured to separate at least one of the extending arms from the mounting region of the conductive frames. | 2015-01-15 |
20150014723 | OPTICAL TUNING OF LIGHT EMITTING SEMICONDUCTOR JUNCTIONS - Light emitting semiconductor junctions are disclosed. An exemplary light emitting junction has a first electrical contact coupled to a first side of the junction. The exemplary junction also has a second electrical contact coupled to a second side of the junction. The exemplary junction also has a region of set straining material that exerts a strain on the junction and alters both: (i) an optical polarization, and (ii) an emission wavelength of the junction. The region of set straining material is not on a current path between said first electrical contact and said second electrical contact. The region of set straining material covers a third side and a fourth side of the light emitting junction along a cross section of the light emitting junction. The light emitting semiconductor junction device comprises a three-five alloy. | 2015-01-15 |
20150014724 | LIGHT EMITTING DEVICE AND LIGHT EMITTING DEVICE PACKAGE - A light emitting device includes a light emitting structure including a plurality of compound semiconductor layers. A current spreading layer is provided under the light emitting structure, and a plurality of wavelength conversion structures is provided in the current spreading layer. An electrode layer is provided under the current spreading layer, and an electrode is provided on the light emitting structure. | 2015-01-15 |
20150014725 | PHOSPHOR AND LIGHT EMITTING DEVICE HAVING THE SAME - Disclosed are a phosphor and a light emitting device having the same. The light emitting device includes a light emitting chip, a plurality of phosphors to absorb a portion of light emitted from the light emitting chip and to emit lights having mutually different peak wavelengths, and a molding member provided on the light emitting chip and including the phosphors. The phosphors include a first phosphor to emit light having a first peak wavelength, a second phosphor to absorb the portion of the light emitted from the light emitting chip and to emit light having a second peak wavelength, and a third phosphor to absorb the portion of the light emitted from the light emitting chip and to emit light having a third peak wavelength. The first to third peak wavelengths have mutually different color spectrums, and a light emission spectrum in which the first to third peak wavelengths are mixed with each other has a luminous intensity having a substantially flat section in at least 30 nm at a peak wavelength thereof. | 2015-01-15 |
20150014726 | PHOSPHOR, METHOD FOR PRODUCING PHOSPHOR AND LIGHT EMITTING DEVICE - The present invention provides a phosphor comprising a europium-activated sialon crystal having a basic composition represented by a formula: (Sr | 2015-01-15 |
20150014727 | Silicone-Grafted Core-Shell Particles, Polymer Matrix, and LED Containing Same - A silicone-grafted core-shell particle is described wherein the silicone-grafted core-shell particle comprises a core of an inorganic particle and a shell of a grafted poly(dimethylsiloxane) polymer formed from a bi-terminated poly(dimethylsiloxane) having reactive groups at each terminal end. The silicone-grafted core-shell particles may be dispersed in a polysiloxane polymer matrix and employed as an LED encapsulant. | 2015-01-15 |
20150014728 | Phosphor-matrix composite powder for minimizing light scattering and led structure including the same - This invention relates to a phosphor-matrix composite powder for minimizing light scattering and to an LED structure including the same, wherein the phosphor-matrix composite powder satisfying certain relation is prepared and the LED structure including the same is manufactured, thus minimizing light scattering and reflection and maximizing package efficiency. | 2015-01-15 |
20150014729 | RESIN COMPOSITION FOR REFLECTING LIGHT, SUBSTRATE FOR MOUNTING OPTICAL SEMICONDUCTOR ELEMENT, AND OPTICAL SEMICONDUCTOR DEVICE - A resin composition for reflecting light of the present invention includes an epoxy resin B having a unit structure X of alicyclic acid anhydride and a unit structure Y of hydrogenated bisphenol, and a colorant. The epoxy resin B preferably further has a unit structure Z of bisphenol-type epoxy. In addition, the resin composition for reflecting light of the present invention preferably further includes an epoxy resin A having a structure represented by the following formula (1). Then, when a content of the epoxy resin A is M [% by mass], and a content of the epoxy resin B is N [% by mass], it is preferable to satisfy a relationship of 0.1≦M/N≦10. | 2015-01-15 |
20150014730 | LIGHT-EMITTING DIODE - The invention relates to a light-emitting diode comprising a body ( | 2015-01-15 |
20150014731 | LIGHT EMITTING DEVICE PACKAGE - A light emitting device package includes: a package body having a first cavity; an electrode layer comprising a first electrode and a second electrode which are electrically isolated from each other; a light emitting device electrically connected to the electrode layer on the package body; a protective device disposed in a second cavity formed at the package body and electrically connected to the electrode layer; a reflective layer on the protective device; and a molding part on the light emitting device, wherein at least one of the first electrode and the second electrode is disposed on the package body. | 2015-01-15 |
20150014732 | TEXTURED PHOSPHOR CONVERSION LAYER LIGHT EMITTING DIODE - This invention is related to LED Light Extraction for optoelectronic applications. More particularly the invention relates to (Al, Ga, In)N combined with optimized optics and phosphor layer for highly efficient (Al, Ga, In)N based light emitting diodes applications, and its fabrication method. A further extension is the general combination of a shaped high refractive index light extraction material combined with a shaped optical element. | 2015-01-15 |
20150014733 | LED LIGHTING APPARATUS AND METHOD FOR FABRICATING WAVELENGTH CONVERSION MEMBER FOR USE IN THE SAME - A light-emitting diode (LED) lighting apparatus is provided. The LED lighting apparatus includes at least one LED, and a wavelength conversion member spaced apart from the LED and configured to convert a wavelength of light emitted from the LED. The wavelength conversion member includes a light-transmitting member, and a transfer molded wavelength conversion layer disposed on at least one surface of the light-transmitting member. The transfer molded wavelength conversion layer includes a resin and a phosphor. | 2015-01-15 |
20150014734 | LIGHT EMITTING DEVICE AND LIGHT EMITTING DEVICE PACKAGE - A light emitting device according to the embodiment includes a first electrode; a light emitting structure including a first semiconductor layer, an active layer and a second semiconductor layer on the first electrode; a second electrode on the light emitting structure; and a control switch installed on the light emitting structure to control the light emitting structure. | 2015-01-15 |
20150014735 | LIGHT EMITTING DEVICE - The light emitting device includes a light emitting structure including a first conductive semiconductor layer, an active layer under the first conductive semiconductor layer, and a second conductive semiconductor layer under the active layer; a plurality of first electrodes disposed under the light emitting structure and electrically connected to the first conductive semiconductor layer by passing through the second conductive semiconductor layer, the active layer and a portion of the first conductive semiconductor layer; a second electrode disposed under the light emitting structure to be electrically connected to the second conductive semiconductor layer; a first insulating layer disposed around the first electrode to insulate the first electrode from the second electrode; a bonding layer electrically connected to the second electrode by passing through the first electrode and the first insulating layer; and a second insulating layer around the bonding layer. | 2015-01-15 |
20150014736 | EMISSIVE STRUCTURE WITH LATERAL CARRIER INJECTION - The structure intended to emit electromagnetic radiation, comprises first and second electrodes configured so as to allow carriers to be injected into at least one semiconductor-based stack with a view to making them recombine in an active zone of the stack in order to form all or some of the electromagnetic radiation to be emitted. The first electrode has at least one first face for injecting carriers into the stack, said face being oriented in a different direction to the direction in which the stack is formed. The second electrode comprise a second face for injecting carriers into the stack, wherein said second injection face comprises a first portion facing the first electrode and a second portion for which the first electrode is not facing, and a dielectric element, making contact with the first electrode, is interposed between at least one part of the first electrode and at least one part of the first portion. | 2015-01-15 |
20150014737 | Method for Producing an Optoelectronic Semiconductor Component, and Optoelectronic Semiconductor Component - In at least one embodiment, the semiconductor component includes at least one optoelectronic semiconductor chip having a radiation exit side. The surface-mountable semiconductor component comprises a shaped body that covers side surfaces of the semiconductor chip directly and in a positively locking manner. The shaped body and the semiconductor chip do not overlap, as seen in a plan view of the radiation exit side. | 2015-01-15 |
20150014738 | LIGHT EMITTING DIODE PACKAGE AND METHOD OF FABRICATING THE SAME - A light emitting diode package and a method of fabricating the same. The package includes a light emitting diode chip having a first surface and a second surface opposing the first surface, a metal frame (or TAB tape) having leads connected to the light emitting diode chip, and a light-pervious encapsulant encapsulating the light emitting diode chip, wherein the second surface of the chip is exposed from the first light-pervious encapsulant. The metal frame (or TAB tape) connects the light emitting diode chip to an external circuit board. The LED package does not need wire-bonding process. A method of fabricating a light emitting diode package is also provided. | 2015-01-15 |
20150014739 | LED MODULE, METHOD FOR MANUFACTURING THE SAME, AND LED CHANNEL LETTER INCLUDING THE SAME - A light emitting diode (LED) module including: a circuit board; at least one LED disposed on the circuit board; a molding cover spaced apart from the LED by a predetermined gap and covering upper and lower surfaces of the circuit board at an edge of the circuit board; and a circuit part positioned at the edge of the circuit board and driving the LED. The LED is centrally disposed on an upper surface of the circuit board. | 2015-01-15 |
20150014740 | Monolithic Composite III-Nitride Transistor with High Voltage Group IV Enable Switch - There are disclosed herein various implementations of a monolithically integrated component. In one exemplary implementation, such a monolithically integrated component includes an enhancement mode group IV transistor and two or more depletion mode III-Nitride transistors. The enhancement mode group IV transistor may be implemented as a group IV insulated gate bipolar transistor (group IV IGBT). One or more of the III-Nitride transistor(s) may be situated over a body layer of the group IV IGBT, or the III-Nitride transistor(s) may be situated over a collector layer of the IGBT. | 2015-01-15 |