04th week of 2012 patent applcation highlights part 16 |
Patent application number | Title | Published |
20120018846 | Surge-Current-Resistant Semiconductor Diode With Soft Recovery Behavior and Methods for Producing a Semiconductor Diode - A bipolar semiconductor component, in particular a diode, comprising an anode structure which controls its emitter efficiency in a manner dependent on the current density in such a way that the emitter efficiency is low at small current densities and sufficiently high at large current densities, and an optional cathode structure, which can inject additional holes during commutation, and production methods therefor. | 2012-01-26 |
20120018847 | GALLIUM NITRIDE-BASED SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - A gallium nitride-based semiconductor device includes a composite substrate and a gallium nitride layer. The composite substrate includes a silicon substrate and a filler. The silicon substrate includes a first surface and a second surface opposite to the first surface, and the first surface defines a number of grooves therein. The filler is filled into the number of grooves on the first surface of the silicon substrate. A thermal expansion coefficient of the filler is bigger than that of the silicon substrate. The gallium nitride layer is formed on the second surface of the silicon substrate. | 2012-01-26 |
20120018848 | HIGH SURFACE DOPANT CONCENTRATION SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING - The present disclosure provides a high surface dopant concentration semiconductor device and method of fabricating. In an embodiment, a method of forming the semiconductor device includes providing a substrate, forming a doped region in the substrate, forming a stressing layer over the doped region, performing a boron (B) doping implant to the stressing layer, annealing the B doping implant, and after annealing the B doping implant, forming a silicide layer over the stressing layer. | 2012-01-26 |
20120018849 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME - In a CSP type semiconductor device, the invention prevents a second wiring from forming a protruding portion toward a dicing line at the time of forming the second wiring that is connected to the back surface of a first wiring formed near a side surface portion of a semiconductor die on the front surface and extends onto the back surface of the semiconductor die over a step portion in a window that is formed from the back surface side of the semiconductor die so as to expose the back surface of the first wiring. A glass substrate is bonded on a semiconductor substrate on which a first wiring is formed on the front surface near a dicing line with a resin as an adhesive being interposed therebetween. The semiconductor substrate is then etched from the back surface to form a window having inclined sidewalls with the dicing line as a center. A second wiring is then formed so as to be connected to the back surface of the first wiring exposed in the window and extend over one of the sidewalls of the window, that extends perpendicular to the dicing line, onto the back surface of the semiconductor substrate. | 2012-01-26 |
20120018850 | LASER PROCESSING METHOD AND SEMICONDUCTOR DEVICE OBTAINED BY USING THE PROCESSING METHOD - A conventional laser processing method has a problem that the number of scanning lines is large, and it is difficult to shorten the time needed for the marking. In a laser processing method of the present invention, a first laser processing is performed in accordance with the outer border of, for example, an English letter “A,” and thereafter, second and subsequent laser processings are performed on an inner region inside the outer border. In this event, for the second and subsequent laser processings, the respective processing lines (scanning lines) are set up in a longitudinal direction of a processing region. Thus, the number of processing lines is greatly reduced. As a result, the time needed for the marking is greatly shortened, and the laser marking workability is improved. | 2012-01-26 |
20120018851 | METAL-CONTAMINATION-FREE THROUGH-SUBSTRATE VIA STRUCTURE - A through-substrate via (TSV) structure that is immune to metal contamination due to a backside planarization process is provided. After forming a through-substrate via (TSV) trench, a diffusion barrier liner is conformally deposited on the sidewalls of the TSV trench. A dielectric liner is formed by depositing a dielectric material on vertical portions of the diffusion barrier liner. A metallic conductive via structure is formed by subsequently filling the TSV trench. Horizontal portions of the diffusion barrier liner are removed. The diffusion barrier liner protects the semiconductor material of the substrate during the backside planarization by blocking residual metallic material originating from the metallic conductive via structure from entering into the semiconductor material of the substrate, thereby protecting the semiconductor devices within the substrate from metallic contamination. | 2012-01-26 |
20120018852 | VIA STRUCTURE AND METHOD THEREOF - A vent hole precursor structure ( | 2012-01-26 |
20120018853 | PHOTOELECTROCHEMICAL ETCHING OF P-TYPE SEMICONDUCTOR HETEROSTRUCTURES - A method for photoelectrochemical (PEC) etching of a p-type semiconductor layer simply and efficiently, by providing a driving force for holes to move towards a surface of a p-type cap layer to be etched, wherein the p-type cap layer is on a heterostructure and the heterostructure provides the driving force from an internal bias generated internally in the heterostructure; generating electron-hole pairs in a separate area of the heterostructure than the surface to be etched; and using an etchant solution to etch the surface of the p-type layer. | 2012-01-26 |
20120018854 | SEMICONDUCTOR DEVICE AND THE METHOD OF MANUFACTURING THE SAME - A method for manufacturing a semiconductor device is provided with: a step of preparing a semiconductor wafer ( | 2012-01-26 |
20120018855 | METHOD OF PRODUCING A HETEROSTRUCTURE WITH LOCAL ADAPTATION OF THE THERMAL EXPANSION COEFFICIENT - A method of producing a heterostructure by bonding at least one first substrate having a first thermal expansion coefficient onto a second substrate having a second thermal expansion coefficient, with the first thermal expansion coefficient being different from the second thermal expansion coefficient. Prior to bonding, trenches are formed in one of the two substrates from the bonding surface of the substrate. The trenches are filled with a material having a third thermal expansion coefficient lying between the first and second thermal expansion coefficients. | 2012-01-26 |
20120018856 | Semiconductor Device With Drift Regions and Compensation Regions - Disclosed is a method of forming a semiconductor device with drift regions of a first doping type and compensation regions of a second doping type, and a semiconductor device with drift regions of a first doping type and compensation regions of a second doping type. | 2012-01-26 |
20120018857 | SYSTEM AND METHOD OF CHIP PACKAGE BUILD-UP - A system and method for chip package fabrication is disclosed. The chip package includes a base re-distribution layer having an opening formed therein, an adhesive layer having a window formed therein free of adhesive material, and a die affixed to the base re-distribution layer by way of the adhesive layer, the die being aligned with the window such that only a perimeter of the die contacts the adhesive layer. A shield element is positioned between the base re-distribution layer and adhesive layer that is generally aligned with the opening formed in the base re-distribution layer and the window of the adhesive layer such that only a perimeter of the shield element is attached to the adhesive layer. The shield element is separated from the die by an air gap and is configured to be selectively removable from the adhesive layer so as to expose the front surface of the die. | 2012-01-26 |
20120018858 | METHOD OF ASSEMBLING INTEGRATED CIRCUIT DEVICE - A method of assembling an integrated circuit (IC) device includes the steps of providing a lead frame or substrate panel, attaching a semiconductor die to the lead frame or substrate panel and electrically coupling the die to the lead frame or substrate panel. The method further includes encapsulating the die with a first encapsulant, and the encapsulating the first encapsulant with a second encapsulant where the second encapsulant includes a material that provides electromagnetic shielding. | 2012-01-26 |
20120018859 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME - To suppress a short circuit between neighboring wires which is caused when the loop of a wire is formed into multiple stages in a semiconductor device in which a wiring board and one semiconductor chip mounted over a main surface thereof are electrically coupled with the wire. In a semiconductor device in which a chip is mounted on an upper surface of a wiring board and a bonding lead of the wiring board and a bonding pad of the chip are electrically coupled with wires, a short circuit between the neighboring wires is suppressed by making larger the diameter of the longest wire arranged in a position closest to a corner part of the chip than the diameter of the other wires. | 2012-01-26 |
20120018860 | METHOD FOR MANUFACTURING SUBSTRATE FOR SEMICONDUCTOR ELEMENT, AND SEMICONDUCTOR DEVICE - Provided is a manufacturing method of a substrate for a semiconductor element including the steps of: providing a first photosensitive resin layer on a first surface of a metal plate; providing a second photosensitive resin layer on a second surface different from the first surface of the metal plate; forming a first etching mask for forming a connection post on the first surface of the metal plate; forming a second etching mask for forming a wiring pattern on the second surface of the metal plate; forming the connection post by performing an etching from the first surface to a midway of the metal plate; filling in a premold resin to a portion of the first surface where the connection post does not exist; processing so that a height of the connection post of the first surface is lower than a height of the premold resin surrounding the connection post; and forming the wiring pattern by performing an etching on the second surface. | 2012-01-26 |
20120018861 | TAPE CARRIER SUBSTRATE - A tape carrier substrate includes: a tape carrier base | 2012-01-26 |
20120018862 | SEMICONDUCTOR PACKAGE - A semiconductor package includes a die pad; a semiconductor die mounted on the die pad; a plurality of leads in a first horizontal plane disposed along peripheral edges of the die pad; a ground bar downset from the first horizontal plane to a second horizontal plane between the leads and the die pad; a plurality of downset tie bars connecting the ground bar with the die pad; a plurality of ground wires bonding to both of the ground bar and the die pad; and a molding compound at least partially encapsulating the die pad, inner ends of the leads such that bottom surface of the die pad is exposed within the molding compound. | 2012-01-26 |
20120018863 | MICROELECTRONIC ELEMENTS WITH REAR CONTACTS CONNECTED WITH VIA FIRST OR VIA MIDDLE STRUCTURES - A microelectronic unit includes a microelectronic element, e.g., an integrated circuit chip, having a semiconductor region of monocrystalline form. The semiconductor region has a front surface extending in a first direction, an active circuit element adjacent the front surface, a rear surface remote from the front surface, and a conductive via which extends towards the rear surface. The conductive via can be insulated from the semiconductor region by an inorganic dielectric layer. An opening can extend from the rear surface partially through a thickness of the semiconductor region, with the opening and the conductive via having respective widths in the first direction. The width of the opening may be greater than the width of the conductive via where the opening meets the conductive via. A rear contact can be electrically connected to the conductive via and exposed at the rear surface for electrical connection with an external circuit element, such as another like microelectronic unit, a microelectronic package, or a circuit panel. | 2012-01-26 |
20120018864 | BONDING STRUCTURE AND METHOD - A bonding structure and a method for bonding components, wherein the bonding structure includes a nanoparticle preform. In accordance with embodiments, the nanoparticle preform is placed on a substrate and a workpiece is placed on the nanoparticle preform. | 2012-01-26 |
20120018865 | INTEGRATED CIRCUIT PACKAGING SYSTEM WITH ISLAND TERMINALS AND EMBEDDED PADDLE AND METHOD OF MANUFACTURE THEREOF - A method of manufacture of an integrated circuit packaging system includes: providing a leadframe having an upper structure, upper protrusions, and a base side facing away from the upper structure and the upper protrusions; forming tie bars in the leadframe with an opening surrounding the upper structure, the tie bars connected to the upper structure and exposed on the base side; connecting an integrated circuit to the upper protrusions; applying an encapsulant over the integrated circuit, over the upper structure, and in the opening with the base side exposed; removing the tie bars exposing a first surface and a second surface of the encapsulant below the first surface, and forming a die paddle from the upper structure and exposed from the second surface; and removing the leadframe from the base side forming island terminals from the upper protrusions exposed from the second surface and isolated from the die paddle. | 2012-01-26 |
20120018866 | INTEGRATED CIRCUIT PACKAGING SYSTEM WITH ISLAND TERMINALS AND METHOD OF MANUFACTURE THEREOF - A method of manufacture of an integrated circuit packaging system includes: providing a package paddle having an upper hole below a paddle top side, the upper hole bounded by an upper non-horizontal side with a curve surface; forming a terminal adjacent the package paddle; mounting an integrated circuit on the paddle top side; and forming an encapsulation within the upper hole. | 2012-01-26 |
20120018867 | SUBSTRATE FOR SEMICONDUCTOR ELEMENT, METHOD FOR MANUFACTURING SUBSTRATE FOR SEMICONDUCTOR ELEMENT, AND SEMICONDUCTOR DEVICE - Provided is a manufacturing method of a semiconductor element substrate including: a step of forming a first photoresist pattern on a first surface of a metallic plate, to form a semiconductor element mounting part, a semiconductor element electrode connection terminal, a wiring, an outer frame part, and a slit; a step of forming a second photoresist pattern on the second surface of the metallic plate; a step of forming the slit by half etching to connect the metallic chip with a four corners of the outer frame part; a step of forming a plurality of concaved parts on the second surface of the metallic plate; a step of forming a resin layer by injecting a resin to the plurality of concaved parts; and a step of etching the first surface of the metallic plate and forming the semiconductor element electrode connection terminal and the outer frame. | 2012-01-26 |
20120018868 | MICROELECTRONIC ELEMENTS HAVING METALLIC PADS OVERLYING VIAS - A microelectronic unit, an interconnection substrate, and a method of fabricating a microelectronic unit are disclosed. A microelectronic unit can include a semiconductor element having a plurality of active semiconductor devices therein, the semiconductor element having a first opening extending from a rear surface partially through the semiconductor element towards a front surface and at least one second opening, and a dielectric region overlying a surface of the semiconductor element in the first opening. The microelectronic unit can include at least one conductive interconnect electrically connected to a respective conductive via and extending away therefrom within the aperture. In a particular embodiment, at least one conductive interconnect can extend within the first opening and at least one second opening, the conductive interconnect being electrically connected with a conductive pad having a top surface exposed at the front surface of the semiconductor element. | 2012-01-26 |
20120018869 | MOLD DESIGN AND SEMICONDUCTOR PACKAGE - A chip package includes a carrier having a first and a second major surface. The first major surface includes an active region surrounded by an inactive region. The chip package includes contact pads in the active region for mating with chip contacts of a chip. A support structure is disposed on the inactive region of the first major surface. The support structure forms a dam that surrounds the active region. When a chip or chip stack is mounted in the active region, spacing exists between the dam and the chip or chip stack. The spacing creates convention paths for heat dissipation. | 2012-01-26 |
20120018870 | CHIP SCALE PACKAGE AND FABRICATION METHOD THEREOF - A fabrication method of a chip scale package includes: disposing a chip on a carrier board and embedding the chip into a composite board having a hard layer and a soft layer; and removing the carrier board so as to perform a redistribution layer (RDL) process, thereby solving the conventional problems caused by directly attaching the chip on an adhesive film, such as film-softening caused by heat, encapsulant overflow, chip deviation and contamination, etc., all of which may result in poor electrical connection between the wiring layer and the chip electrode pads in the subsequent RDL process and even waste products as a result. | 2012-01-26 |
20120018871 | STACK PACKAGE AND SEMICONDUCTOR PACKAGE INCLUDING THE SAME - A stack package usable in a three-dimensional (3D) system-in-package (SIP) includes a first semiconductor chip, a second semiconductor chip, and a supporter. The first semiconductor chip includes a through silicon via (TSV), and the second semiconductor chip is stacked on the first semiconductor chip and is electrically connected to the first semiconductor chip through the TSV of the first semiconductor chip. The supporter is attached onto the first semiconductor chip so as to be spaced apart from an edge of the second semiconductor chip. | 2012-01-26 |
20120018872 | LID FOR AN ELECTRICAL HARDWARE COMPONENT - To minimize the warpage of an organic substrate that supports at least one electrical hardware component (e.g., a system-in-package module), a bottom surface of a lid is attached to a top surface of the electrical hardware component. The lid includes a leg that extends from the bottom surface of the lid towards a top surface of the substrate. A portion of the leg closest to the substrate may move relative to the substrate. As the lid warps, the lid does not also cause distortion of the substrate. The leg may be a flange that extends at least a portion of the width or at least a portion of the length of the lid, may be a post located at the perimeter of the lid, or may be any other portion extending from above the electrical component towards the substrate. | 2012-01-26 |
20120018873 | METHOD AND PACKAGE FOR CIRCUIT CHIP PACKAGING - A method and a package for circuit chip package having a bent structure. The circuit chip package includes: a substrate having a first coefficient of thermal expansion (CTE); a circuit chip, having a second CTE, mounted onto the substrate; a metal foil disposed on the circuit chip in thermal contact with the chip; a metal lid having (i) a third CTE that is different from the first CTE and (ii) a bottom edge region, where the metal lid is disposed on the metal foil in thermal contact with the metal foil; and an adhesive layer along the bottom edge of the metal lid, cured at a first temperature, bonding the lid to the substrate, producing an assembly which, at a second temperature, is transformed to a bent circuit chip package. | 2012-01-26 |
20120018874 | Semiconductor Device and Method of Forming RDL over Contact Pad with High Alignment Tolerance or Reduced Interconnect Pitch - A semiconductor device has a semiconductor die with an active surface. A first conductive layer is formed over the active surface. A first insulating layer is formed over the active surface. A second insulating layer is formed over the first insulating layer and first conductive layer. A portion of the second insulating layer is removed over the first conductive layer so that no portion of the second insulating layer overlies the first conductive layer. A second conductive layer is formed over the first conductive layer and first and second insulating layers. The second conductive layer extends over the first conductive layer up to the first insulating layer. Alternatively, the second conductive layer extends across the first conductive layer up to the first insulating layer on opposite sides of the first conductive layer. A third insulating layer is formed over the second conductive layer and first and second insulating layers. | 2012-01-26 |
20120018875 | Reducing Delamination Between an Underfill and a Buffer layer in a Bond Structure - A die includes a metal pad, a passivation layer, and a patterned buffer layer over the passivation layer. The patterned buffer layer includes a plurality of discrete portions separated from each other. An under-bump-metallurgy (UBM) is formed in an opening in the patterned buffer layer and an opening in the passivation layer. A metal bump is formed over and electrically coupled to the UBM. | 2012-01-26 |
20120018876 | Multi-Die Stacking Using Bumps with Different Sizes - A device includes a first die having a first side and a second side opposite to first side, the first side includes a first region and a second region, and a first metal bump of a first horizontal size formed on the first region of the first side of the first die. A second die is bonded to the first side of the first die through the first metal bump. A dielectric layer is formed over the first side of the first die and includes a first portion directly over the second die, a second portion encircling the second die, and an opening exposing the second region of the first side of the first die. A second metal bump of a second horizontal size is formed on the second region of the first side of the first die and extending into the opening of the dielectric layer. The second horizontal size is greater than the first horizontal size. An electrical component is bonded to the first side of the first die through the second metal bump. | 2012-01-26 |
20120018877 | Package-on-Package Structures with Reduced Bump Bridging - A device includes a package substrate including a first non-reflowable metal bump extending over a top surface of the package substrate; a die over and bonded to the package substrate; and a package component over the die and bonded to the package substrate. The package component includes a second non-reflowable metal bump extending below a bottom surface of the package component. The package component is selected from the group consisting essentially of a device die, an additional package substrate, and combinations thereof. A solder bump bonds the first non-reflowable metal bump to the second non-reflowable metal bump. | 2012-01-26 |
20120018878 | Doping Minor Elements into Metal Bumps - A method of forming a device includes providing a substrate, and forming a solder bump over the substrate. A minor element is introduced to a region adjacent a top surface of the solder bump. A re-flow process is then performed to the solder bump to drive the minor element into the solder bump. | 2012-01-26 |
20120018879 | STACK PACKAGE AND METHOD FOR MANUFACTURING THE SAME - A stack package includes a cover film, a first package having a first semiconductor chip which is attached to the cover film, a first adhesive member which is formed to seal the first semiconductor chip and a surface of the cover film, and a first circuit pattern which is disposed over the first adhesive member and electrically connected with the first semiconductor chip; a second package disposed over the first package, having a second semiconductor chip which is electrically connected with the first circuit pattern, a second adhesive member which is formed to seal the second semiconductor chip, and a second circuit pattern which is formed over the second adhesive member, and a via formed to pass through the second circuit pattern and the second adhesive member and to be electrically connected with the first circuit pattern and the second circuit pattern. | 2012-01-26 |
20120018880 | SEMICONDUCTOR STRUCTURE AND MANUFACTURING METHOD THEREOF - A semiconductor structure and a manufacture method thereof are disclosed. The semiconductor structure includes a semiconductor wafer having a plurality of semiconductor device dies, wherein each of the semiconductor device dies includes a die body, a metal wiring layer, a bump, and a metal layer. The metal wiring layer is formed on the die body while the bump is formed on the metal wiring layer during the semiconductor front-end-of-line (FEOL) process and protrudes from the die body. The metal layer is disposed on one side of the bump opposite to the metal wiring layer, wherein the activity of the metal layer is smaller than the activity of the bump. In this way, the semiconductor structure of the present invention is easy to be manufactured and the manufacture cost is also reduced. | 2012-01-26 |
20120018881 | Semiconductor Device and Method of Dual-Molding Die Formed on Opposite Sides of Build-Up Interconnect Structure - A semiconductor device has a first interconnect structure. A first semiconductor die has an active surface oriented towards and mounted to a first surface of the first interconnect structure. A first encapsulant is deposited over the first interconnect structure and first semiconductor die. A second semiconductor die has an active surface oriented towards and mounted to a second surface of the first interconnect structure opposite the first surface. A plurality of first conductive pillars is formed over the second surface of the first interconnect structure and around the second semiconductor die. A second encapsulant is deposited over the second semiconductor die and around the plurality of first conductive pillars. A second interconnect structure including a conductive layer and bumps is formed over the second encapsulant and electrically connects to the plurality of first conductive pillars and the first and second semiconductor die. | 2012-01-26 |
20120018882 | Semiconductor Device and Method of Forming Stress Relief Layer Between Die and Interconnect Structure - A semiconductor device is made by forming a first conductive layer over a sacrificial carrier. A conductive pillar is formed over the first conductive layer. An active surface of a semiconductor die is mounted to the carrier. An encapsulant is deposited over the semiconductor die and around the conductive pillar. The carrier and adhesive layer are removed. A stress relief insulating layer is formed over the active surface of the semiconductor die and a first surface of the encapsulant. The stress relief insulating layer has a first thickness over the semiconductor die and a second thickness less than the first thickness over the encapsulant. A first interconnect structure is formed over the stress relief insulating layer. A second interconnect structure is formed over a second surface of encapsulant opposite the first interconnect structure. The first and second interconnect structures are electrically connected through the conductive pillar. | 2012-01-26 |
20120018883 | CONDUCTIVE STRUCTURE FOR A SEMICONDUCTOR INTEGRATED CIRCUIT - A conductive structure for a semiconductor integrated circuit is provided. The semiconductor integrated circuit has a substrate, a plurality of pads and a passivation layer. The pads are disposed on the substrate. The passivation layer extends over and covers a part of the substrate and a part of around each of the pads to define a plurality of openings, in which the conductive structure electrically connects to a corresponding pad of the pads through a corresponding opening of the openings. The conductive structure includes a buffering layer, an under bump metallurgy (UBM) layer and a bump. The buffering layer is formed on the passivation layer without fully blocking the corresponding opening. The UBM layer is substantially formed in the corresponding opening and electrically connects to the corresponding pad. Additionally, the UBM layer, formed under the bump, continuously extends over and covers a peripheral portion of the buffering layer. | 2012-01-26 |
20120018884 | Semiconductor package structure and forming method thereof - The present invention provides a semiconductor package structure, which includes a substrate having a top surface and a back surface, a plurality of first connecting points on the top surface and a plurality of second connecting points on the back surface; a chip having an active surface and back surface, a plurality of pads on the active surface, and the chip is attached on the top surface of the substrate; a plurality of wires is electrically connected the plurality of pads on the active surface of the chip with the plurality of first connecting points on the top surface of substrate; a first encapsulant is filled to cover portion of the plurality of wires, the chip, and the portion of top surface of the substrate; a second encapsulate is filled to cover the first encapsulant, the plurality of wires and is formed on portion of the top surface of the substrate, in which the Yang's module of the second encapsulant is different with that of the first encapsulant; and a plurality of connecting components is disposed on the back surface of the substrate and is electrically connected the plurality of second connecting points. | 2012-01-26 |
20120018885 | SEMICONDUCTOR APPARATUS HAVING THROUGH VIAS - A semiconductor apparatus includes a base substrate and a logic chip disposed on the base substrate. The logic chip includes a memory control circuit, a first through silicon via, and a second through silicon via. The memory control circuit is disposed on a first surface of a substrate of the logic chip, and a memory chip is disposed on a second surface of the substrate of the logic chip. The first through silicon via electrically connects the memory control circuit and the memory chip, the second through silicon via is electrically connected to the memory chip and is configured to transmit power for the memory chip, the second through silicon via is electrically insulated from the logic chip, and the first surface of the substrate of the logic chip faces the base substrate. | 2012-01-26 |
20120018886 | INTEGRATED CIRCUIT PACKAGE WITH OPEN SUBSTRATE AND METHOD OF MANUFACTURING THEREOF - A method of manufacturing an integrated circuit package includes: forming a substrate including: forming a core layer, and forming vias in the core layer; forming a conductive layer having a predetermined thickness on the core layer and having substantially twice the predetermined thickness in the vias; and forming connections between an integrated circuit die and the conductive layer. | 2012-01-26 |
20120018887 | MICROELECTRONIC DEVICE PACKAGES, STACKED MICROELECTRONIC DEVICE PACKAGES, AND METHODS FOR MANUFACTURING MICROELECTRONIC DEVICES - A stackable microelectronic package includes a first microelectronic die attached to and electrically connecting with a first substrate. A second microelectronic die is attached to the first die on one side, and to a second substrate on the other side. Electrical connections are made between the first die and the first substrate, between the second die and the second substrate, and between the first and second substrates, e.g., via wire bonding. The electrical connecting elements are advantageously encased in a molding compound. Exposed contacts on the first and/or second substrates, not covered by the molding compound, provide for electrical connections between the package, and another package stacked onto the package. The package may avoid coplanarity factors, can be manufactured using existing equipment, allows for intermediate testing, and can also offer a thinner package height. | 2012-01-26 |
20120018888 | SEMICONDUCTOR DEVICES AND METHOD OF FORMING THE SAME - A method of forming semiconductor devices includes stacking an insulating layer and a polysilicon layer over a semiconductor substrate, forming a region where nitrogen (N) is scattered in a place adjacent to a surface of the polysilicon layer within the polysilicon layer using a plasma method, and depositing a doped polysilicon layer on the polysilicon layer including the region where nitrogen (N) is scattered. | 2012-01-26 |
20120018889 | PROCESS FOR PRODUCING A METALLIZATION LEVEL AND A VIA LEVEL AND CORRESPONDING INTEGRATED CIRCUIT - A process for producing an upper metallization level and a via level connecting this upper metallization level to a lower metallization level includes: producing an insulating region on the lower metallization level; producing a hard mask on the insulating region ( | 2012-01-26 |
20120018890 | SEMICONDUCTOR DEVICE - A semiconductor device of the present invention includes a supporting board, an electrode surface processing layer formed on the supporting board, a semiconductor element, and a solder material containing a first metal composed mainly of bismuth and a second metal having a higher melting point than the first metal and joining the electrode surface processing layer and the semiconductor element, the first metal containing particles of the second metal inside the first metal. The composition ratio of the second metal is higher than the first metal in a region of the solder material corresponding to the center portion of the semiconductor element, and the composition ratio of the second metal is at least 83.8 atomic percent in the region corresponding to the center portion. | 2012-01-26 |
20120018891 | METHODS TO FORM SELF-ALIGNED PERMANENT ON-CHIP INTERCONNECT STRUCTURES - Methods of fabricating a self-aligned permanent on-chip interconnect structure are provided. In one embodiment, the method includes forming a patterned photoresist having at least one opening on a surface of a substrate. A dielectric sidewall structure is then formed on each sidewall of the patterned photoresist and within the at least one opening. A narrowed width opening is present between neighboring dielectric sidewall structures. The patterned photoresist is then removed and thereafter each dielectric sidewall structure is converted into a permanent patterned dielectric structure which is self-aligned and double patterned. At least an electrically conductive material is formed within the narrowed width openings. | 2012-01-26 |
20120018892 | SEMICONDUCTOR DEVICE WITH INDUCTOR AND FLIP-CHIP - Semiconductor devices comprising a flip-chip having vias to connect front and back surfaces and a bondwire connected to the via or the back surface. | 2012-01-26 |
20120018893 | METHODS OF FORMING SEMICONDUCTOR ELEMENTS USING MICRO-ABRASIVE PARTICLE STREAM - A method of fabricating a microelectronic unit includes providing a semiconductor element having a front surface and a rear surface remote from the front surface, forming at least one first opening extending from the rear surface partially through the semiconductor element towards the front surface by directing a jet of fine abrasive particles towards the semiconductor element, and forming at least one conductive contact and at least one conductive interconnect coupled thereto. The semiconductor element can include a plurality of active semiconductor devices therein. The semiconductor element can include a plurality of conductive pads exposed at the front surface. Each conductive interconnect can extend within one or more of the first openings and can be coupled directly or indirectly to at least one of the conductive pads. Each of the conductive contacts can be exposed at the rear surface of the semiconductor element for electrical connection to an external device. | 2012-01-26 |
20120018894 | NON-LITHOGRAPHIC FORMATION OF THREE-DIMENSIONAL CONDUCTIVE ELEMENTS - A method of forming a conductive element on a substrate and the resulting assembly are provided. The method includes forming a groove in a sacrificial layer overlying a dielectric region disposed on a substrate. The groove preferably extends along a sloped surface of the substrate. The sacrificial layer is preferably removed by a non-photolithographic method, such as ablating with a laser, mechanical milling, or sandblasting. A conductive element is formed in the groove. The grooves may be formed. The grooves and conductive elements may be formed along any surface of the substrate, including within trenches and vias formed therein, and may connect to conductive pads on the front and/or rear surface of the substrate. The conductive elements are preferably formed by plating and may or may not conform to the surface of the substrate. | 2012-01-26 |
20120018895 | ACTIVE CHIP ON CARRIER OR LAMINATED CHIP HAVING MICROELECTRONIC ELEMENT EMBEDDED THEREIN - A structure including a first semiconductor chip with front and rear surfaces and a cavity in the rear surface. A second semiconductor chip is mounted within the cavity. The first chip may have vias extending from the cavity to the front surface and via conductors within these vias serving to connect the additional microelectronic element to the active elements of the first chip. The structure may have a volume comparable to that of the first chip alone and yet provide the functionality of a multi-chip assembly. A composite chip incorporating a body and a layer of semiconductor material mounted on a front surface of the body similarly may have a cavity extending into the body from the rear surface and may have an additional microelectronic element mounted in such cavity. | 2012-01-26 |
20120018896 | SEMICONDUCTOR DEVICE - The semiconductor device according to the present invention includes a semiconductor chip, an island having an upper surface to which the semiconductor chip is bonded, a lead arranged around the island, a bonding wire extended between the surface of the semiconductor chip and the upper surface of the lead, and a resin package collectively sealing the semiconductor chip, the island, the lead and the bonding wire, while the lower surface of the island and the lower surface of the lead are exposed on the rear surface of the resin package, and the lead is provided with a recess concaved from the lower surface side and opened on a side surface thereof. | 2012-01-26 |
20120018897 | SEMICONDUCTOR MODULE AND METHOD OF MANUFACTURING THE SAME - Disclosed herein is a semiconductor module, including: a substrate including wiring patterns formed on both sides thereof; a first device mounted on the substrate; a first molding layer made of a molding material, surrounding the first device and including via holes formed therein to interconnect with the wiring pattern formed on one side of the substrate; and a second device mounted on the first molding layer and electrically connected with the wiring pattern formed on one side of the substrate through the via holes formed in the first molding layer. | 2012-01-26 |
20120018898 | VIA STRUCTURE AND METHOD THEREOF - The invention relates to a layered micro-electronic and/or micro-mechanic structure, comprising at least three alternating electrically conductive layers with insulating layers between the conductive layers. There is also provided a via in a first outer layer, said via comprising an insulated conductive connection made of wafer native material through the layer, an electrically conductive plug extending through the other layers and into said via in the first outer layer in order to provide conductivity through the layers, and an insulating enclosure surrounding said conductive plug in at least one selected layer of said other layers for insulating said plug from the material in said selected layer. It also relates to micro-electronic and/or micro-mechanic device comprising a movable member provided above a cavity such that it is movable in at least one direction. The device has a layered structure according to the invention. Methods of making such a layered MEMS structure is also provided. | 2012-01-26 |
20120018899 | Semiconductor Device and Method of Conforming Conductive Vias Between Insulating Layers in Saw Streets - A semiconductor device is made by disposing a plurality of semiconductor die on a carrier and creating a gap between each of the semiconductor die. A first insulating material is deposited in the gap. A portion of the first insulating material is removed. A conductive layer is formed over the semiconductor die. A conductive lining is conformally formed on the remaining portion of the first insulating material to form conductive via within the gap. The conductive vias can be tapered or vertical. The conductive via is electrically connected to a contact pad on the semiconductor die. A second insulating material is deposited in the gap over the conductive lining. A portion of the conductive via may extend outside the first and second insulating materials. The semiconductor die are singulated through the gap. The semiconductor die can be stacked and interconnected through the conductive vias. | 2012-01-26 |
20120018900 | Semiconductor Device and Method of Conforming Conductive Vias Between Insulating Layers in Saw Streets - A semiconductor device is made by disposing a plurality of semiconductor die on a carrier and creating a gap between each of the semiconductor die. A first insulating material is deposited in the gap. A portion of the first insulating material is removed. A conductive layer is formed over the semiconductor die. A conductive lining is conformally formed on the remaining portion of the first insulating material to form conductive via within the gap. The conductive vias can be tapered or vertical. The conductive via is electrically connected to a contact pad on the semiconductor die. A second insulating material is deposited in the gap over the conductive lining. A portion of the conductive via may extend outside the first and second insulating materials. The semiconductor die are singulated through the gap. The semiconductor die can be stacked and interconnected through the conductive vias. | 2012-01-26 |
20120018901 | FLIP-CHIP PACKAGE AND METHOD OF MANUFACTURING THE SAME USING ABLATION - A method of manufacturing a flip-chip package and a flip-chip package manufactured by such method. In one embodiment, the method includes: (1) mounting a die to a first die, (2) encapsulating the second die with a molding compound and (3) selectively ablating the molding compound based on an expected heat generation of portions of the second die to reduce a thickness of the molding compound proximate the portions. | 2012-01-26 |
20120018902 | FILM FOR FLIP CHIP TYPE SEMICONDUCTOR BACK SURFACE, DICING TAPE-INTEGRATED FILM FOR SEMICONDUCTOR BACK SURFACE, PROCESS FOR PRODUCING SEMICONDUCTOR DEVICE, AND FLIP CHIP TYPE SEMICONDUCTOR DEVICE - The present invention relates to a film for flip chip type semiconductor back surface to be formed on a back surface of a semiconductor element flip chip-connected to an adherend, the film for flip chip type semiconductor back surface containing an inorganic filler in an amount within a range of 70% by weight to 95% by weight based on the whole of the film for flip chip type semiconductor back surface. | 2012-01-26 |
20120018903 | FILM FOR FLIP CHIP TYPE SEMICONDUCTOR BACK SURFACE, DICING TAPE-INTEGRATED FILM FOR SEMICONDUCTOR BACK SURFACE, PROCESS FOR PRODUCING SEMICONDUCTOR DEVICE, AND FLIP CHIP TYPE SEMICONDUCTOR DEVICE - The present invention relates to a film for flip chip type semiconductor back surface to be formed on a back surface of a semiconductor element flip chip-connected onto an adherend, the film having a light transmittance at a wavelength of 532 nm or 1064 nm of 20% or less, and having a contrast between a marking part and a part other than the marking part after laser marking of 20% or more. | 2012-01-26 |
20120018904 | Semiconductor Device and Method of Forming RDL Wider than Contact Pad along First Axis and Narrower than Contact Pad Along Second Axis - A semiconductor device has a semiconductor die and first conductive layer formed over a surface of the semiconductor die. A first insulating layer is formed over the surface of the semiconductor die. A second insulating layer is formed over the first insulating layer and first conductive layer. An opening is formed in the second insulating layer over the first conductive layer. A second conductive layer is formed in the opening over the first conductive layer and second insulating layer. The second conductive layer has a width that is less than a width of the first conductive layer along a first axis. The second conductive layer has a width that is greater than a width of the first conductive layer along a second axis perpendicular to the first axis. A third insulating layer is formed over the second conductive layer and first insulating layer. | 2012-01-26 |
20120018905 | ELECTRONIC COMPONENT ASSEMBLY HAVING PROFILED ENCAPSULATED BONDS - An electronic component assembly is provided having an integrated circuit supported on a first mounting area such that a first surface of the integrated circuit contacts the first mounting area, electrical conductors supported on a second mounting area, and a series of wire bonds extending from contact pads on a second surface of the integrated circuit, opposite the first surface, to the electrical conductors. The first and second mounting areas are stepped relative to one another and the wire bonds are covered in a bead of encapsulant. The bead of encapsulant has a profiled surface that is flat and inclined relative to the second surface. | 2012-01-26 |
20120018906 | CIRCUIT DEVICE AND METHOD OF MANUFACTURING THE SAME - In a circuit device of the present invention, the lower surface side of a circuit board and part of side surfaces thereof are covered with a second resin encapsulant, and the upper surface side and the like of the circuit board are covered with a first resin encapsulant. Since heat dissipation to the outside of the circuit device is achieved mainly through the second resin encapsulant, a particle size of filler contained in the second resin encapsulant is made larger than a particle size of filler contained in the first resin encapsulant. Heat dissipation to the outside of the circuit device is greatly improved. | 2012-01-26 |
20120018907 | Cooling Tower System With Chemical Feed Responsive to Actual Load - A system for controlling chemical feed to a cooling tower system may include a controller that may receive at least one input signal and send a control signal to a controllable feed apparatus to enable or disable the chemical feed to be delivered to the cooling tower system. The control signal may be sent in response to the at least one input signal. The system also may include a monitoring device to monitor consistency of the delivery of chemical feed to the cooling tower system. The monitoring device may send a monitor signal to the controller evaluating the consistency of the delivery of chemical feed to the cooling tower system. | 2012-01-26 |
20120018908 | CARBURETOR VALVE ADJUSTMENT LIMITER - A carburetor valve and limiter cap assembly for limiting adjustment of fuel flow in a carburetor may include a needle valve and a limiter cap. The needle valve may have a tip, a threaded portion, a head having a flange with an outer diameter greater than the rest of the head, and one or more serrations formed on the head. The limiter cap may have a sidewall, a tab extending outwardly from the sidewall, a first cavity having an inner diameter sized for an interference fit with the flange, and at least one driving feature to engage at least one serration so that rotation of the limiter cap causes rotation of the needle valve. The interference fit between the flange and the limiter cap inhibits removal of the limiter cap from the needle valve to prevent undesired adjustment of the needle valves by an end user. | 2012-01-26 |
20120018909 | APPARATUS FOR INCREASING THE ATMOSPHERIC HUMIDITY OF AN OUTDOOR WEATHERING FACILITY - An apparatus for increasing the atmospheric humidity of an outdoor weathering facility for test samples in a test area ( | 2012-01-26 |
20120018910 | Apparatus to add gas from liquid state source to a dry carrier gas at low pressure - This relates to an apparatus to add gas from liquid state source to a dry carrier gas at low pressure and delivery method. | 2012-01-26 |
20120018911 | Optical device and deflector formation process - The Optical Device and Deflector Formation Process is a process where a non-permanent optical device or deflector is created: (1) within a medium by sources of energy that disrupts the properties of the media in a volume within a media; (2) within a vacuum or media by sources of energy that introduce specific aligned energies in the vacuum or media in a volume within a vacuum or media; or in combination of (1) and (2). A created Optical Device or Deflector is not contained within any boundaries that are composed of a media that is different from the media that surrounds the optical device or deflector. The process indicated in (1) consists of secondary and tertiary sources of energy: where the secondary sources can affect the energy, energy state and/or the orientation of specific molecules or particles, and tertiary sources are similar to secondary sources, however, makeup for deficiencies the secondary sources could not provide. The process indicated in (2) consists of secondary sources that introduce a specific array of arrays of energies that become the optical device or deflector, where tertiary sources may not be necessary unless they are assisting the secondary sources. The term “primary source” is reserved for waves, particles, molecules or objects that are deflected or affected by the created device. The optical device, in summary, causes a change in the primary sources momentum of particles, molecules, objects or waves when passing through or deflected from the optical device or deflector, respectively. | 2012-01-26 |
20120018912 | METHOD OF PREPARING NANO-DISPERSED HIGH-ALL-TRANS-CAROTENOID MICROCAPSULES - A method of preparing nano-dispersed high-all-trans-carotenoid microcapsules is provided, comprising: preparing 10-20% carotenoid suspension by milling the high-all trans-carotenoid crystals with dichloromethane until the particle size thereof is in the range of 2-5 μm, then supplying the suspension together with preheated dichloromethane of another pass into a dissolving tank to obtain a solution of 0.5-2%; delivering the solution together with ethanol or isopropanol into a crystallization device having high gravity rotating packed bed simultaneously and continuously, and then into a wiped-film evaporator for desolvation until the solid content is 10-20%, then a transparent alcohol dispersion of carotenoid is obtained; mashing the alcohol dispersion together with an aqueous solution containing an antioxidant and protective colloid and spray drying to obtain nano-dispersed high-all-trans-carotenoid microcapsules. As the crystals are nano-dispersed and the content of trans-isomer is more than 90%, the carotenoid microcapsules of present inventions exhibit high bioavailability. | 2012-01-26 |
20120018913 | METHODS AND SYSTEMS FOR CONVERSION OF MOLTEN SULFUR TO POWDER SULFUR - Methods and systems are provided for converting molten sulfur to powder sulfur by gas cooling of atomized sprays of molten sulfur. Certain embodiments contemplate a vertical tower that allows molten sulfur to produce an atomized spray or mist of molten sulfur descending from the top of the vertical tower. Gas introduced to the bottom of the vertical tower flows upward intimately interfacing with the descending atomized molten sulfur spray. The molten sulfur in the form of an atomized sulfur spray is cooled by the gas to form a sulfur powder. In certain embodiments, the sulfur powder formed is sufficiently small to be suitable for combination with a base fluid for producing a slurry for convenient transport of the sulfur particulates. Advantages of certain embodiments include higher efficiencies, lower cost, and production of much smaller solid sulfur average particulate sizes, which in turn allows for easier sulfur transport. | 2012-01-26 |
20120018914 | SHEET PRESS MOLDING METHOD AND METHOD OF PRODUCING FUEL CELL SEPARATOR - Provided is a sheet press molding method that can create molded articles having low thickness deviation. In this method, a molded article ( | 2012-01-26 |
20120018915 | POWDER FOR MOLDING AND METHOD FOR PRODUCING MOLDED ARTICLE USING THE SAME - The present invention provides a powder for molding that reduces or prevents drawbacks such as unevenness and low fluidity when a mixed powder is used as a powder for molding. The present invention relates to powders for molding including particles in which each particle contains an inorganic component and a water-soluble organic polymer component and methods for producing the same. | 2012-01-26 |
20120018916 | PROCESS AND DEVICE FOR TEXTURING YARNS FOR RUGS OR CARPET UPSTREAM OF A HEAT TREATMENT UNIT - The present invention relates to a process and a device for texturing yarns for rugs or carpet, upstream of a heat treatment unit. | 2012-01-26 |
20120018917 | PROCESS AND APPARATUS FOR PRODUCING CRYSTALLINE RESIN FILM OR SHEET - A process and apparatus for manufacturing a crystalline resin film or sheet. This manufacturing apparatus includes: an extruder that melts crystalline resin while supplying it; a gear pump that is provided on the downstream side of the extruder; a die which is provided on the downstream side of the gear pump, and which has a slit-shaped aperture; a cooling apparatus which cools film-shaped or sheet-shaped crystalline resin (A) discharged in a melted state from the die to a temperature which is not less than the crystallization temperature but not more than the melting point; and a pair of pinch rolls that press-roll between them the film-shaped or sheet-shaped crystalline resin (B) which has passed through the cooling apparatus ( | 2012-01-26 |
20120018918 | TOOL, ARRANGEMENT, AND METHOD FOR MANUFACTURING A COMPONENT, COMPONENT - This application describes a tool, an arrangement, and a method of manufacturing a component. The manufacturing of the component is achieved by a resin transfer from a storage chamber via a transfer line into a working chamber. Before the resin transfer, taking place, for example by a compressed air charging of the storage chamber, the storage chamber is filled with an amount of resin adjusted to the size of the component. Furthermore, a semi-finished product, consisting of cut-to-size reinforcement fibers, is inserted into the working chamber that is adjusted to the form of the component to be produced. Storage chamber, transfer line, and working chamber are configured in a one-piece mould casing of the tool. The application further describes a component manufactured by the above-mentioned tool or by the above-mentioned method respectively. | 2012-01-26 |
20120018919 | MOLD FOR MANUFACTURE OF FIBER COMPOSITE PARTS AND METHOD OF MANUFACTURE OF FIBER COMPOSITE PARTS WITH SUCH A MOLD - A mold to produce fiber composite components is described where a fiber ply ( | 2012-01-26 |
20120018920 | RESIN SUPPLY DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE - According to one embodiment, a resin supply device is configured to supply granular resins to a resin mold device including a first mold provided with a cavity and a second mold mated to the first mold. The resin supply device includes a first mechanism and a second mechanism. The first mechanism is configured to juxtapose multiple granular resins on an adsorption surface by adsorbing the multiple granular resins on the adsorption surface larger than the granular resins, and form an adsorbed resin body with a uniform thickness. The adsorbed resin body is made of the adsorbed multiple granular resins on the adsorption surface. The second mechanism is configured to drop the multiple granular resins adsorbed on the adsorption surface into the cavity by adsorption-release of the adsorption surface. | 2012-01-26 |
20120018921 | Method For Constructing A Bridge Decking Panel - Bridge decking panels are cast in a form that has at least one and preferably two or more channel-forming sheets attached to the bottom wall of the form and extending from wall to wall. Each sheet is dimensioned to receive an anchor plate assembly and form a channel in the cast concrete between runner bars. | 2012-01-26 |
20120018922 | METHOD FOR PROGRAMMING A SHAPE MEMORY POLYMER WHILE DEFINING THE SWITCH TEMPERATURE BY SELECTION OF THE PROGRAMMING TEMPERATURE - The invention relates to a method for programming a shape memory polymer, which comprises at least one switching segment having at least one thermal phase transition and covalent and/or non-covalent cross-linking points such that the shape memory polymer after the programming thereof is in a position to transition from a programmed temporary shape into the permanent shape thereof, following a temperature increase to a temperature that at least corresponds to a switching temperature (T | 2012-01-26 |
20120018923 | SYSTEM AND METHOD FOR FORMING A CERAMIC SCINTILLATOR - A manufacturing line for fabricating a scintillator that includes a vat configured to receive a mixture of scintillator components. The mixture includes a dissolved acid solution comprising a rare earth element, a gallium compound, an aluminum compound, and a cerium salt. The vat is further configured to react a base solution with the mixture to form a precipitate. The manufacturing line further includes a separator configured to separate the precipitate from a remaining portion of the mixture, and a compaction device configured to compact the precipitate to form a green ceramic wafer. | 2012-01-26 |
20120018924 | MULTIPLE-ZONE LIQUEFIER ASSEMBLY FOR EXTRUSION-BASED ADDITIVE MANUFACTURING SYSTEMS - A liquefier assembly for use in an extrusion-based additive manufacturing system, and a method for building a three-dimensional model with the extrusion-based additive manufacturing system, where the liquefier assembly includes a liquefier tube having multiple, independently heatable zones along a longitudinal length of the liquefier tube. | 2012-01-26 |
20120018925 | INSPECTION SYSTEMS AND METHODS FOR BLOW-MOLDED CONTAINERS - Systems and methods for in-line inspection of plastic blow molded containers. The inspection system may comprise a plurality of emitter assemblies arranged in a vertical array. Each emitter assembly may cyclically emit light energy in at least two different narrow wavelength bands at a container as the container passes through an inspection area. The system may also comprise a plurality of broadband photodetectors arranged in a vertical array, each photodetector facing at least one of the emitter assemblies with the inspection area therebetween such that the photodetectors are capable of sensing light energy that passes through the container when it is in the inspection area. The system may also comprise a processor in communication with the photodetectors for determining a characteristic of the container based on signals from the photodetectors. | 2012-01-26 |
20120018926 | Three-Dimensional Parts Having Porous Protective Structures - Three-dimensional parts having porous protective structures built with powder-based additive manufacturing systems, the porous protective structures being configured to protect the three-dimensional parts from damage during de-powdering processes. | 2012-01-26 |
20120018927 | SEAL COMPONENT MANUFACTURING METHOD AND MOLD - To prevent defective molding, a base member is set between split molds of a metal mold, a molding rubber material is injected into an endless shape cavity defined between the base member and the split mold, an injection amount thereof is made such that the molding rubber material fills the cavity and thereafter flows from an air vent hole open to a confluence position in the cavity into a surplus material reservoir provided downstream but does not fill the surplus material reservoir, pressure drop due to flow resistance is caused to the molding rubber material flowing into the surplus material reservoir, and thereby pressure in the cavity is maintained to be not lower than pressure required to mold a gasket and lower than pressure causing leakage from the cavity. | 2012-01-26 |
20120018928 | Method and apparatus for producing tiered containers - A method and apparatus for molding a plurality of tiered containers from a single parison. Two or more parisons can be arranged next to each other. A molding apparatus of this invention can have one or more mold sections that can be operated in a controlled fashion to form a stacked or tiered arrangement of containers from a single parison or can be arranged to form an array of containers including two or more columns of containers each having two or more tiered containers, all during a single cycle of the molding apparatus. Each container formed by the method and apparatus of this invention can be blow molded and/or vacuum formed and/or filled and/or sealed. Each seal can be a hermetic seal or any other suitable seal formed through a molding step. | 2012-01-26 |
20120018929 | MODIFIED POLY(HYDROXYALKANOIC ACID) COMPOSITION - Disclosed is a process for preparing injection stretch blow molded containers from poly(hydroxyalkanoic acid) compositions comprising a poly(hydroxyalkanoic acid), an ethylene ester copolymer, and a nucleator. | 2012-01-26 |
20120018930 | TEMPERATURE MAINTENANCE AND/OR POSSIBLE HEATING APPARATUS FOR LONG METAL PRODUCTS AND RELATIVE METHOD - A temperature maintenance and/or possible heating apparatus for long products, continuously cast and sheared to size by means of shearing means so as to define segments of bloom, said apparatus being disposed between a casting machine having a first casting line and a second casting line, and a rolling line disposed downstream of the casting machine in order to make long rolled metal products. The apparatus comprises a first furnace, a second furnace and a transit tunnel. The first furnace is provided with a first introduction rollerway to introduce the bloom segments, disposed aligned with said first casting line, a removal rollerway, aligned with said rolling line and suitable to render the bloom segments available to said rolling line, and transverse transfer devices to transfer the bloom segments from the first introduction rollerway to the removal rollerway. The second furnace is disposed upstream with respect to said first furnace, provided with a second introduction rollerway to introduce the bloom segments, disposed aligned with said second casting line, an exit rollerway aligned with the removal rollerway and suitable to convey the bloom segments toward said removal rollerway and transverse transfer devices suitable to transfer the bloom segments from the second introduction rollerway toward the exit rollerway. The transit tunnel is located aligned with said first casting line, adjacent and parallel to the longitudinal extension of the second furnace and upstream of said first furnace, conformed to transport the cast bloom segments from said first casting line toward the first introduction rollerway of the first furnace. | 2012-01-26 |
20120018931 | HIGH-TEMPERATURE FURNACE FOR THE ANNEALING OF SHEET-METAL JOINTS - A high-temperature furnace for the annealing of sheet-metal joints ( | 2012-01-26 |
20120018932 | Lift Assist Device and Associated Methods - The present invention provides devices to assist a subject in lifting and associated methods. In one aspect for example, a lift assist device can include a harness operable to be secured about or to a torso of a user, and at least one cord having a first end operably coupled to the harness and a second end operably coupleable to a forelimb of the user. Additionally, at least one of the harness and the at least one cord are substantially elastic, and where the first and second ends of the at least one cord are positioned to assist the user in lifting an object. In one aspect, the at least one cord is substantially elastic and the harness is substantially inelastic. | 2012-01-26 |
20120018933 | Press cushion for a hydraulic press - A press cushion ( | 2012-01-26 |
20120018934 | DAMPER AND VEHICLE SEAT - A damper is provided which damps an applied external force in accordance with the strength of the external force (impact strength). The damper | 2012-01-26 |
20120018935 | LIQUID-SEALED ANTIVIBRATION DEVICE - A partition element | 2012-01-26 |
20120018936 | LIQUID-SEALED ANTIVIBRATION DEVICE - A partition element | 2012-01-26 |
20120018937 | VIBRATION ABSORPTION DEVICE - A vibration absorption device includes a cylindrical bracket coupled with one of a vibration generating section and a vibration receiving section and having an inner surface formed in a linear shape in a cylinder axial direction, an external cylinder made of resin and including a small diameter section that is formed in a cylindrical shape, press-fit into a cylinder of the bracket, and has a small diameter surface formed to an outer surface configured to a press-fit leading end to the bracket, a large diameter section that has an outer diameter larger than the inner diameter of the bracket and the outer diameter of the small diameter section and a thickness which is configured to a portion nearer to a press-fit rear end side to the bracket than the small diameter section and is thicker than the small diameter section before the press-fit, and a large diameter surface formed to an outer surface, and an intermediate section that is configured between the small diameter section and the large diameter section and has a standing surface formed on an outer surface for coupling the small diameter surface and the large diameter surface, an internal cylinder that is disposed to an inner peripheral side of the external cylinder as well as coupled with the other of the vibration generating section and the vibration receiving section, and an elastic body that is interposed between an inner peripheral surface of the external cylinder and an outer peripheral surface of the internal cylinder for coupling the external cylinder and the internal cylinder to each other. | 2012-01-26 |
20120018938 | MULTI-PURPOSE VACUUM CLAMP TABLE - In one embodiment, an apparatus for constraining an object includes a first clamping surface configured to apply a first holding force to a first surface of the object; a second clamping surface configured to apply a second holding force to a second surface of the object; and an actuator configured to selectively move the second clamping surface relative to the first clamping surface. | 2012-01-26 |
20120018939 | DIRECT CLAMP GRIPPER PROVIDING MAXIMIZED PART CLEARANCE - A finishing system for finishing a part using a robot may include a staging fixture, a gripper, and a regrip fixture. The part may include an inner surface, a protrusion, and a notch. The staging fixture may include first pads adapted to engage the protrusion. The gripper may be adapted to couple to the robot and may include a first outer surface and second pads. The first outer surface may be shaped to engage the inner surface of the part and the second pads may be adapted to clamp the protrusion on the part. The regrip fixture may include a tab adapted to engage the notch. | 2012-01-26 |
20120018940 | DEVICE FOR HOLDING WAFER SHAPED ARTICLES - A device for holding wafer-shaped articles, such as semiconductor wafers, is equipped with a series of pins that are brought into contact with a peripheral edge of the wafer-shaped article, under control of a common gear ring or a series of conjointly operated gear sectors. In the regions of the gear ring or gear sectors engaging the pin assemblies, those elements are designed to yield more readily than other regions of the gear ring or gear sectors, to accommodate differential thermal expansion of the chuck components in the vicinity of the pin assemblies. | 2012-01-26 |
20120018941 | DIRECT CLAMP GRIPPER AND PART ADAPTER SYSTEM FOR GRIPPER - An automated system for adapting a gripper to conform to parts having various configurations is disclosed herein. The gripper includes clamp pads having clamp surfaces for clamping protrusions on the parts. The automated system includes an actuator coupled to the gripper, a transfer mechanism engaging the actuator and moveable in response to actuations by the actuator, and a clamp block coupled to and moveable with the transfer mechanism. | 2012-01-26 |
20120018942 | Bracing apparatus - An easy to use form bracing apparatus and the method of using same that can be quickly and easily used to accurately plumb and securely brace a generally vertically extending member such as a column form into which concrete is to be poured to form a concrete column. The bracing apparatus includes a collar assembly constructed and arranged to be secured about the member and first and second supporting surface engaging braces that are connected to the collar assembly. The collar assembly includes a strap that is selected from a plurality of straps of different lengths and a pair of spaced apart brace support assemblies that are connected to the selected strap. Each strap is provided with a plurality of strategically spaced apart locating elements that are used to locate the brace support assemblies at strategic locations along the length of the belt. | 2012-01-26 |
20120018943 | IMAGE FORMING APPARATUS AND IMAGE FORMING METHOD - An image forming apparatus includes an image forming unit that forms images on sheets; a stack portion on which the sheets with the images are stacked as a bundle of the sheets with first end parts of the sheets aligned; a first binding unit that binds the first end parts; a second binding unit that binds the first end parts, by a binding method that requires a binding region larger than that of the first binding unit; and a distance reducing unit that changes a position of the bundle when bound by the first binding unit, from a position of the bundle when bound by the second binding unit, and reduces a distance between a part bound by the second binding unit and the first end parts as compared with a distance between a part bound by the first binding unit and the first end parts. | 2012-01-26 |
20120018944 | SHEET PROCESSING DEVICE AND IMAGE FORMING APPARATUS - A sheet processing device includes a stacking unit that is used to stack a bundle of sheets that are placed upon each other with first edge portions of the sheets being aligned with each other; a first binding unit that binds the first edge portions of the bundle of sheets stacked upon the stacking unit; a second binding unit that is provided integrally with the first binding unit in a direction along the first edge portions of the bundle of sheets stacked upon the stacking unit, and that binds the first edge portions by a binding method differing from a binding method of the first binding unit; and an angle changing mechanism that is capable of changing an angle of the first binding unit with respect to the bundle of sheets when binding the first edge portions with the first binding unit. | 2012-01-26 |
20120018945 | SHEET CONVEYING APPARATUS AND IMAGE FORMING APPARATUS - An image forming apparatus including a sheet conveying portion which conveys a sheet to be formed with an image, and an abutment member which is abutted by the tip end of a sheet conveyed by the sheet conveying portion, and movable to a first attitude of being abutted by the tip end of the sheet being conveyed, and to a second attitude of allowing passage of the sheet and being in the state of abutting the surface of the sheet, wherein the abutment member in the second attitude abuts a part which is outside an image forming region and on the sheet surface having the image forming region in a central part in a width direction orthogonal to a sheet conveying direction. | 2012-01-26 |