05th week of 2009 patent applcation highlights part 45 |
Patent application number | Title | Published |
20090029514 | METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE - A method for manufacturing a semiconductor device, by which a bottom gate thin film transistor that has an improved S value and a channel forming region with a smaller thickness than that of a source region and a drain region can be manufactured in a simple process. An island-like conductive film is formed over a surface of an insulating substrate in a portion corresponding to a channel forming region, and is covered with an insulating film to form a projection portion. After an amorphous semiconductor film is deposited to cover the projection portion, the amorphous semiconductor film is irradiated with laser light so as to be melted and crystallized. Part of the melted semiconductor over the projection portion flows into regions adjacent to both sides of the projection portion, which results in reduction in thickness of the semiconductor film over the projection portion (channel forming region). | 2009-01-29 |
20090029515 | METHODS FOR THE FORMATION OF FULLY SILICIDED METAL GATES - An advanced gate structure that includes a fully silicided metal gate and silicided source and drain regions in which the fully silicided metal gate has a thickness that is greater than the thickness of the silicided source/drain regions is provided. Methods of forming the advanced gate structure are also provided. | 2009-01-29 |
20090029516 | METHOD TO IMPROVE TRANSISTOR TOX USING HIGH-ANGLE IMPLANTS WITH NO ADDITIONAL MASKS - A method of forming an integrated circuit includes forming a gate structure over a semiconductor body, and forming a shadowing structure over the semiconductor body laterally spaced from the gate structure, thereby defining an active area in the semiconductor body therebetween. The method further includes performing an angled implant into the gate structure, wherein the shadowing structure substantially blocks dopant from the angled implant from implanting into the active area, and performing a source/drain implant into the gate structure and the active area. | 2009-01-29 |
20090029517 | Method of Making a Semiconductor Device - A method of making a semiconductor device, comprising: forming a first material and a second material; forming a first oxide on the first material and a second oxide on the second material; and etching second material so as to remove at least a portion of the second material. | 2009-01-29 |
20090029518 | Method of fabricating schottky barrier diode - Disclosed is a method of fabricating a Schottky barrier diode, which comprises the steps of laminating an N | 2009-01-29 |
20090029519 | METHOD OF MANUFACTURING MIM CAPACITOR - Embodiments relate to a method of manufacturing an MIM capacitor, which is capable of obtaining a desired capacitance by controlling a k value of insulator thin film formed between bottom and top electrodes by adjusting a plasma doping condition. An MIM capacitor may be manufactured by forming a bottom electrode over a semiconductor substrate. An insulator thin film may be formed over the bottom electrode. A k value of the insulator thin film may be adjusted to an optional range by performing a plasma nitridation doping process on the insulator thin film. A top electrode may be formed over the insulator thin film. | 2009-01-29 |
20090029520 | METHODS OF FORMING SEMICONDUCTOR DEVICE - A method of forming a semiconductor device, where the method may include forming a first trench in a semiconductor substrate, forming first device isolation patterns that fill the first trench, forming spacers on sidewalls of the first device isolation patterns, forming a second trench in the semiconductor substrate between first device isolation patterns, and forming second device isolation patterns that fill the second trench. The second trench is formed using an etching process adopting the first device isolation pattern and the spacer as a mask. | 2009-01-29 |
20090029521 | METHOD OF FORMING ISOLATION STRUCTURE OF SEMICONDUCTOR DEVICE FOR PREVENTING EXCESSIVE LOSS DURING RECESS GATE FORMATION - An isolation structure of a semiconductor device is formed by forming a hard mask layer on a semiconductor substrate having active and field regions to expose the field region. A trench is defined by etching the exposed field region of the semiconductor substrate using the hard mask as an etch mask. An SOG layer is formed in the trench partially filling the trench. An amorphous aluminum oxide layer is formed on the resultant substrate including the SOG layer. An HDP layer is formed on the amorphous aluminum oxide layer to completely fill the trench. The HDP layer and the amorphous aluminum oxide layer are subjected to CMP to expose the hard mask. The hard mask and portions of the amorphous aluminum oxide layer that are formed on the HDP layer are removed. The amorphous aluminum oxide layer is crystallized. | 2009-01-29 |
20090029522 | Method of Forming Isolation Layer of Semiconductor Device - A method of forming isolation layers of a semiconductor device including forming a first insulating layer on a semiconductor substrate including trenches formed in the semiconductor substrate, substituting a top surface of the first insulating layer with salt, removing the salt to expand a space between sidewalls of the first insulating layer, and forming a second insulating layer on the first insulating layer so that the trenches are gap-filled. Thus, trenches can be easily gap-filled with an insulating material. | 2009-01-29 |
20090029523 | Method of Fabricating Flash Memory Device - The invention relates to a method of fabricating flash memory device. In accordance with an aspect of the invention, the method includes forming a gate insulating layer, a first conductive layer, and an isolation mask over a semiconductor substrate. The isolation mask is patterned to expose regions in which an isolation layer will be formed. The first conductive layer, the gate insulating layer, and the semiconductor substrate are etched using the patterned isolation mask to form trenches. A liner oxide layer is formed on the resulting structure including the trenches. The trenches in which the liner oxide layer is formed are filled with an insulating layer. A planarizing process and a cleaning process are carried out such that wing spacers covering the gate insulating layer are formed at top edge portions of the isolation layer, thereby forming the isolation layer. | 2009-01-29 |
20090029524 | METHOD OF MANUFACTURING A SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE HAVING A TRENCH - A semiconductor integrated circuit device and a method of manufacturing the same. The surface of a substrate of an active region surrounded by an element isolation trench is horizontally flat in the center portion of the active region but falls toward the side wall of the element isolation trench in the shoulder portion of the active region. This inclined surface contains two inclined surfaces having different inclination angles. The first inclined surface near the center portion of the active region is relatively steep and the second inclined surface near the side wall of the element isolation trench is gentler than the first inclined surface. The surface of the substrate in the shoulder portion of the active region is wholly rounded and has no angular portion. | 2009-01-29 |
20090029525 | MANUFACTURING METHOD OF SOI SUBSTRATE - A manufacturing method of an SOI substrate with high throughput. A semiconductor layer separated from a semiconductor substrate is transferred to a supporting substrate, thereby manufacturing an SOI substrate. First, the semiconductor substrate serving as a base of the semiconductor layer is prepared. An embrittlement layer is formed in a region at a predetermined depth of the semiconductor substrate, and an insulating layer is formed on a surface of the semiconductor substrate. After bonding the semiconductor substrate and a supporting substrate with the insulating layer interposed therebetween, the semiconductor substrate is selectively irradiated with a laser beam; accordingly, embrittlement of the embrittlement layer progresses. Then, using a physical method or heat treatment, the semiconductor substrate is separated; at that time, the region where the embrittlement has progressed in the embrittlement layer serves as a starting point. | 2009-01-29 |
20090029526 | Method of Exposing Circuit Lateral Interconnect Contacts by Wafer Saw - A method for fabricating wafer-level packages including lateral interconnects. The method includes precutting a cover wafer at the locations where the cover wafer will be completely cut through to separate the wafer-level packages. The cover wafer is bonded to the substrate wafer using bonding rings so as to seal the integrated circuit within a cavity between the cover wafer and the substrate wafer, where the precuts face the substrate wafer. The cover wafer is then cut at the precut locations to remove the unwanted portions of the cover wafer between the packages and expose contacts or probe pads for the lateral interconnects. The substrate wafer is then cut between the wafer-level packages to separate the packages. | 2009-01-29 |
20090029527 | PROCESSES FOR FORMING BACKPLANES FOR ELECTRO-OPTIC DISPLAYS - A non-linear element is formed on a flexible substrate by securing the substrate to a rigid carrier, forming the non-linear element, and then separating the flexible substrate from the carrier. The process allows flexible substrates to be processed in a conventional fab intended to process rigid substrates. In a second method, a transistor is formed on a insulating substrate by forming gate electrodes, depositing a dielectric layer, a semiconductor layer and a conductive layer, patterning the conductive layer to form source, drain and pixel electrodes, covering the channel region of the resultant transistor with an etch-resistant material and etching using the etch-resistant material and the conductive layer as a mask, the etching extending substantially through the semiconductor layer between adjacent transistors. The invention also provides a process for forming a diode on a substrate by depositing on the substrate a first conductive layer, and a second patterned conductive layer and a patterned dielectric layer over parts of the first conductive layer, and etching the first conductive layer using the second conductive layer and dielectric layer as an etch mask. Finally, the invention provides a process for driving an impulse-sensitive electro-optic display. | 2009-01-29 |
20090029528 | METHOD AND APPARATUS FOR CLEANING A SUBSTRATE SURFACE - The present invention generally provides apparatus and method for forming a clean and damage free surface on a semiconductor substrate. One embodiment of the present invention provides a system that contains a cleaning chamber that is adapted to expose a surface of substrate to a plasma cleaning process prior to forming an epitaxial layer thereon. In one embodiment, a method is employed to reduce the contamination of a substrate processed in the cleaning chamber by depositing a gettering material on the inner surfaces of the cleaning chamber prior to performing a cleaning process on a substrate. In one embodiment, oxidation and etching steps are repeatedly performed on a substrate in the cleaning chamber to expose or create a clean surface on a substrate that can then have an epitaxial placed thereon. In one embodiment, a low energy plasma is used during the cleaning step. | 2009-01-29 |
20090029529 | METHOD FOR CLEANING SEMICONDUCTOR DEVICE - Disclosed is a method for cleaning a semiconductor device to remove native oxides or by-products created in the process of forming silicon germanium layers. The use of the method enables removal of native oxides or by-products created in the process of forming silicon germanium layers using hydrogen bromide and prevents reoxidation which may occur in subsequent processes after forming silicon germanium layers. | 2009-01-29 |
20090029530 | Method of manufacturing thin film semiconductor device - Disclosed herein is a method of manufacturing a thin film semiconductor device includes the step of forming a silicon thin film including a crystalline structure on a substrate by a plasma CVD process in which a high order silane gas represented by the formula Si | 2009-01-29 |
20090029531 | HYBRID ORIENTATION SUBSTRATE AND METHOD FOR FABRICATION THEREOF - A method for fabricating a hybrid orientation substrate provides for: (1) a horizontal epitaxial augmentation of a masked surface semiconductor layer that leaves exposed a portion of a base semiconductor substrate; and (2) a vertical epitaxial augmentation of the exposed portion of the base semiconductor substrate. The resulting surface semiconductor layer and epitaxial surface semiconductor layer adjoin with an interface that is not perpendicular to the base semiconductor substrate. The method also includes implanting through the surface semiconductor layer and the epitaxial surface semiconductor layer a dielectric forming ion to provide a buried dielectric layer that separates the surface semiconductor layer and the epitaxial surface semiconductor layer from the base semiconductor substrate. | 2009-01-29 |
20090029532 | Method for forming a microcrystalline silicon film - This invention provides a method for forming a microcrystalline silicon film, which employs a three-stage deposition process to form a microcrystalline film. A microcrystalline silicon seed layer is formed on a substrate. Gaseous ions are used to bombard a surface of the microcrystalline silicon seed layer. Microcrystalline silicon is formed on the microcrystalline silicon seed layer after the bombardment to a predetermined thickness. | 2009-01-29 |
20090029533 | METHOD OF CONTROLLING FILM STRESS IN MEMS DEVICES - A structural film, typically of silicon, in MEMS or NEMS devices is fabricated by depositing the film in the presence of a gas other than nitrogen, and preferably argon as the carrier gas. | 2009-01-29 |
20090029534 | Liquid phase deposition of contacts in programmable resistance and switching devices - A programmable resistance, chalcogenide, switching or phase-change material device includes a substrate with a plurality of stacked layers including a conducting bottom composite electrode layer, an insulative layer having an opening formed therein, an active material layer deposited over both the insulative layer and the bottom composite electrode, and a top electrode layer deposited over the active material layer. The device uses a chemical or electrochemical liquid phase deposition process to selectively and conformally fill the insulative layer opening with the conductive bottom composite electrode layer. Conformally filling the conductive material within the opening reduces structural irregularities within the opening thereby increasing material density and resistivity within the device and thereby improving device performance and reducing programming current. | 2009-01-29 |
20090029535 | ION IMPLANTATION METHOD AND SEMICONDUCTOR DEVICE MANUFACTURING METHOD - In the ion implantation method and semiconductor device manufacturing method relating to the present invention, a disc on which multiple semiconductor substrates are mounted is positioned in the manner that a first angle β | 2009-01-29 |
20090029536 | Bipolar transistors with vertical structures - A method for fabricating a bipolar transistor includes forming a vertical sequence of semiconductor layers, forming an implant mask on the last formed semiconductor layer, and implanting dopant ions into a portion of one or more of the semiconductor layers. The sequence of semiconductor layers includes a collector layer, a base layer that is in contact with the collector layer, and an emitter layer that is in contact with the base layer. The implanting uses a process in which the implant mask stops dopant ions from penetrating into a portion of the sequence of layers. | 2009-01-29 |
20090029537 | Method for forming semiconductor package and mold cast used for the same - A method for fabricating a thermally enhanced semiconductor package including the steps of providing a substrate having a first surface and a second surface; providing a die on the first surface of the substrate and electrically connecting the die with the substrate; placing the die, the substrate, and a heat slug in a mold cavity defined by a mold cast, the mold cast having a protruding portion that touches the periphery on the surface of the heat slug, wherein the contact area is defined as a periphery region and the non-contact area enclosed by the periphery region is defined as a central region; and encapsulating the die and the heat slug by molding materials, wherein the periphery region and the central region of the heat slug are exposed to the ambient air. | 2009-01-29 |
20090029538 | PROCESS FOR MAKING A SEMICONDUCTOR DEVICE USING PARTIAL ETCHING - A method including partially etching a first portion of a first layer, wherein the first layer is a conductive layer, is provided. The method further includes removing at least a portion of a second layer. The method further includes completing etching of said first portion of the conductive layer so that said first portion of the conductive layer is removed. The method further includes completing formation of the semiconductor device. | 2009-01-29 |
20090029539 | METHOD FOR FABRICATING TUNGSTEN LINE AND METHOD FOR FABRICATING GATE OF SEMICONDUCTOR DEVICE USING THE SAME - A method for fabricating a tungsten (W) line includes forming a silicon-containing layer, forming a diffusion barrier layer over the silicon-containing layer, forming a tungsten layer over the diffusion barrier layer, and performing a thermal treatment process on the tungsten layer to increase a grain size of the tungsten layer. | 2009-01-29 |
20090029540 | NONVOLATILE SEMICONDUCTOR MEMORY AND MANUFACTURING METHOD THEREOF - A method for manufacturing a nonvolatile semiconductor memory device including: forming a first and a second stacked gate structures, each of which including a first polysilicon layer formed on a silicon substrate via a gate insulator, an inter-gate insulator formed on the first polysilicon layer, a second polysilicon layer formed on the inter-gate insulator, and a cap layer formed on the second polysilicon layer, respectively; forming a interlayer insulator between the first and the second stacked gate structures, the interlayer insulator covering upper surfaces of the cap layer; planarizing the interlayer insulator by using the cap layers as a stopper; removing the cap layers so that the second polysilicon layers are exposed; masking the exposed second polysilicon layer of the first stacked gate structure by a photoresist film; removing the second polysilicon layer and the inter-gate insulator of the second stacked gate structure so that the first polysilicon layer of the second stacked gate structure is exposed; removing the photoresist film so that the second polysilicon of the first stacked gate structure is exposed; and forming conductive material layers, including a metal, on the exposed first polysilicon layer of the second stacked gate structure and the exposed second polysilicon layer of the first stacked gate structure. | 2009-01-29 |
20090029541 | METHOD OF FABRICATING ANTI-FUSE AND METHOD OF PROGRAMMING ANTI-FUSE - A method of fabricating an anti-fuse includes firstly forming a dielectric layer on a substrate having a first conductive type. Next, a conductive layer is formed on the dielectric layer. A first ion implantation process is then performed, such that the conductive layer has the first conductive type. Thereafter, the conductive layer and the dielectric layer are patterned to form a gate and a gate dielectric layer. The gate and the gate dielectric layer together construct a gate structure. Finally, two source/drain regions having a second conductive type are formed in the substrate at respective sides of the gate. Besides, a method of programming an anti-fuse includes firstly applying a voltage to a gate to break down a gate dielectric layer. The gate and a substrate are then electrically conducted or a P/N forward bias is then formed in a P/N junction after the breakdown of the gate dielectric layer. | 2009-01-29 |
20090029542 | METHODS AND SYSTEMS FOR LASER ASSISTED WIREBONDING - The invention provides methods and systems for laser assisted wirebonding. One or more conditioning laser pulses are used to prepare a bonding surface for wirebonding by removing impurities such as residues from manufacturing processes, oxides, or irregularities on the bonding surface. Subsequently, a free air ball is brought into contact with the conditioned bonding surface to form a weld. | 2009-01-29 |
20090029543 | CLEANING PROCESS FOR MICROELECTRONIC DIELECTRIC AND METAL STRUCTURES - A method for cleaning a dielectric and metal structure within a microelectronic structure uses an oxygen containing plasma treatment, followed by an alcohol treatment, in turn followed by an aqueous organic acid treatment. Another method for cleaning a dielectric and metal structure within a microelectronic structure uses an aqueous surfactant treatment followed by an alcohol treatment and finally followed by an aqueous organic acid treatment. The former method may be used to clean a plasma etch residue from a dual damascene aperture. The second method may be used to clean a chemical mechanical polish planarizing residue from a dual damascene structure. The two methods may be used sequentially, absent any intervening or subsequent sputtering method, to provide a dual damascene structure within a microelectronic structure. | 2009-01-29 |
20090029544 | ADHESION AND MINIMIZING OXIDATION ON ELECTROLESS CO ALLOY FILMS FOR INTEGRATION WITH LOW K INTER-METAL DIELECTRIC AND ETCH STOP - A method and apparatus for processing a semiconductor substrate including depositing a capping layer upon a conductive material formed on the substrate, reducing oxide formation on the capping layer, and then depositing a dielectric material. A method and apparatus for processing a semiconductor substrate including depositing a capping layer upon a conductive material formed on a substrate, exposing the capping layer to a plasma, heating the substrate to more than about 100° C., and depositing a low dielectric constant material. | 2009-01-29 |
20090029545 | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE - The present invention provides a method of manufacturing a semiconductor device which method enables a reduction in via resistance. The method of manufacturing the semiconductor device includes the steps of removing a barrier metal film from a bottom surface of a via, with the barrier metal film remaining on a bottom surface of a trench, modifying lower wiring exposed from the bottom surface of the via to form a modified layer, removing the modified layer to form an engraving (recess portion), and depositing a copper film in the engraving, the via, and the trench to form upper wiring and a via plug. | 2009-01-29 |
20090029546 | METHOD FOR FORMING METAL LINES OF SEMICONDUCTOR DEVICE - Methods are disclosed for forming metal lines of a semiconductor device that can reduce interconnection or contact resistance, and can reduce defects in a barrier metal layer having a column structure. The method can include forming a first metal line on a semiconductor substrate, forming an insulating film on the first metal line, forming a contact hole in the insulating film, sequentially forming a barrier metal layer and a capping layer for protecting the barrier metal layer on an entire upper surface of the resultant substrate, oxidizing the capping layer to form a capping oxide film, depositing a contact metal material on the resultant substrate, planarizing the contact metal material to expose the insulating film, and forming a second metal line on the insulating film. | 2009-01-29 |
20090029547 | NOVEL LADDER POLY ETCHING BACK PROCESS FOR WORD LINE POLY PLANARIZATION - A method is disclosed for etching a polysilicon material in a manner that prevents formation of an abnormal polysilicon profile. The method includes providing a substrate with a word line and depositing a polysilicon layer over said substrate and word line. An organic bottom antireflective coating (BARC) layer is then deposited over said polysilicon layer. A ladder etch is performed to remove the BARC layer and a portion of the polysilicon layer. The ladder etch consists of a series of etch cycles, with each cycle including a breakthrough etch and a soft landing etch. The breakthrough and soft landing etches are performed using different etchant gases, and at different source and bias powers, pressures, gas flow rates, and periods of time. The ladder etch results in a smooth polysilicon surface without abrupt steps. | 2009-01-29 |
20090029548 | METHOD FOR REMOVING POLYMER RESIDUE FROM METAL LINES OF SEMICONDUCTOR DEVICE - It is possible to substantially remove a polymer residue from metal lines formed over a semiconductor device without damage to the metal lines. The disclosed method includes forming a metal layer over a lower layer. A photoresist film is formed over the metal layer, and then patterned. The metal layer is selectively etched, using the patterned photoresist film as an etch barrier, to form metal lines. A substantial portion of the photoresist film left on the metal lines is removed, leaving a polymer residue. Ultraviolet rays are irradiated onto the metal lines to degrade the polymer residue, and the residue is rinsed away. | 2009-01-29 |
20090029549 | METHOD OF SILICIDE FORMATION FOR NANO STRUCTURES - A method forms a first layer over a second layer that comprises silicon. A mask is formed and patterned over the insulator layer. Then, a heavy inert gas such as Xenon (Xe) is implanted through the openings in the mask, through the insulator layer, and into the regions of the silicon layer that are below the opening in the mask. The portions of the insulator layer that are below the openings in the mask are etched away and the mask is removed. A metal or metal alloy layer is formed over the first layer and the exposed regions of the second layer. At least the second layer is heated in a silicide process such that the metal and the exposed regions of the second layer combine to form silicide regions. After this, any remaining metal material can be removed to remove to leave the silicide regions adjacent non-silicide regions of the second layer. | 2009-01-29 |
20090029550 | Method of Manufacturing Nitride Substrate for Semiconductors - In an independent GaN film manufactured by creating a GaN layer on a base heterosubstrate using vapor-phase deposition and then removing the base substrate, owing to layer-base discrepancy in thermal expansion coefficient and lattice constant, bow will be a large ±40 μm to ±100 μm. Since with that bow device fabrication by photolithography is challenging, reducing the bow to +30 μm to −20 μm is the goal. The surface deflected concavely is ground to impart to it a damaged layer that has a stretching effect, making the surface become convex. The damaged layer on the surface having become convex is removed by etching, which curtails the bow. Alternatively, the convex surface on the side opposite the surface having become convex is ground to generate a damaged layer. With the concave surface having become convex due to the damaged layer, suitably etching off the damaged layer curtails the bow. | 2009-01-29 |
20090029551 | Pad and method for chemical mechanical polishing - A method for chemical-mechanical polishing two adjacent structures of a semiconductor device is provided. The method for mechanical polishing comprising: (a) providing a semiconductor device comprising a recess formed in a surface thereof, a first layer formed over the surface, and a second layer filled with the recess and formed on the first layer; and (b) substantially polishing the first and second layer with a pad and a substantially inhibitor-free slurry, wherein the pad comprising a corrosion inhibitor of the second layer. | 2009-01-29 |
20090029552 | Method For Polishing A Substrate Composed Of Semiconductor Material - Semiconductor material substrates are polished by a method including at least one polishing step A by means of which the substrate is polished on a polishing pad containing an abrasive material bonded in the polishing pad and a polishing agent solution is introduced between the substrate and the polishing pad during the polishing step; and at least one polishing step B by means of which the substrate is polished on a polishing pad containing an abrasive material-containing polishing pad and wherein a polishing agent slurry containing unbonded abrasive material is introduced between the substrate and the polishing pad during the polishing step. | 2009-01-29 |
20090029553 | Free radical-forming activator attached to solid and used to enhance CMP formulations - The present invention provides a composition for chemical-mechanical polishing which comprises at least one abrasive particle having a surface at least partially coated by a activator. The activator comprises a metal other than a metal of Group 4(b), Group 5(b) or Group 6(b). The composition further comprises at least one oxidizing agent. The composition is believed to be effective by virtue of the interaction between the activator coated on the surface of the abrasive particles and the oxidizing agent, at the activator surface, to form free radicals. The invention further provides a method that employs the composition in the polishing of a feature or layer, such as a metal film, on a substrate surface. The invention additionally provides a substrate produced this method. | 2009-01-29 |
20090029554 | Method of Batch Integration of Low Dielectric Substrates with MMICs - A method for mounting a dielectric substrate to a semiconductor substrate, such as mounting a dielectric antenna substrate to an MMIC semiconductor substrate. The method includes providing a thin dielectric antenna substrate having metallized layers on opposing sides. In one embodiment, carrier wafers are used to handle and maintain the dielectric substrate in a flat configuration as the metallized layers are patterned. The dielectric substrate is sealed to the semiconductor substrate using a low temperature bonding process. In an alternate embodiment, the metallized layers on the dielectric substrate are patterned simultaneously so as to prevent the substrate from curling. | 2009-01-29 |
20090029555 | Multi-Step selective etching for cross-point memory - Multi-step selective etching. Etching an unmasked region associated with each layer of a plurality of layers, the plurality of layers comprising a stack, wherein the unmasked region of each of the plurality of layers is etched while exposed to a temperature, a pressure, a vacuum, using a plurality of etchants, wherein at least one of the plurality of etchants comprises an inert gas and oxygen, wherein the etchant oxidizes the at least one layer that can be oxidized such that the etching stops, the plurality of etchants leaving substantially unaffected a masked region associated with each layer of the plurality of layers, wherein two or more of the plurality of layers comprises a memory stack, and preventing corrosion of at least one of the plurality of layers comprising a conductive metal oxide by supplying oxygen to the stack after etching the unmasked region without breaking the vacuum. | 2009-01-29 |
20090029556 | METHOD FOR FORMING A SHALLOW TRENCH ISOLATION - A method for forming a shallow trench isolation includes providing a substrate with a trench, a first liner layer and a second liner layer sequentially in the trench with a first oxide filling the trench, performing a first wet etching to remove part of the first oxide and part of the first liner layer to expose the substrate, performing a second wet etching to remove part of the second liner layer so that the second liner layer is lower than surface of the substrate, performing a third wet etching to remove part of the first oxide and part of the first liner layer, and filling the trench with a second oxide to form a shallow trench isolation. | 2009-01-29 |
20090029557 | PLASMA ETCHING METHOD, PLASMA ETCHING APPARATUS AND STORAGE MEDIUM - A plasma etching method plasma-etches an etching target film by using a photoresist film as a mask. The plasma etching method includes loading a target object to be processed into a processing chamber where an upper and a lower electrode are provided to face each other, the target object having the etching target film and the photoresist film in which an opening is formed; introducing into the processing chamber a processing gas containing CF | 2009-01-29 |
20090029558 | Method of manufacturing semiconductor device - The present invention relates to a method of manufacturing a semiconductor device using a substrate including an organic low dielectric constant film containing a silicon, a carbon, an oxygen, and a hydrogen, with a resist pattern being formed on an upper layer side of the low dielectric constant film. The method comprising: an etching step in which the low dielectric constant film is etched by a plasma; an ashing step following to the etching step, in which the resist pattern is ashed by a plasma that is rich in oxygen radicals in such a manner that a relative dielectric constant of the low dielectric constant film can become 5.2 or more; and a recovering step following to the ashing step, in which an organic gas is supplied to the low dielectric constant film so as to recovery a damage of the low dielectric constant film caused by the plasma. | 2009-01-29 |
20090029559 | PHOTO MASK OF SEMICONDUCTOR DEVICE AND METHOD OF FORMING PATTERN USING THE SAME - There is provided a photo mask for forming a specific pattern and a specific pattern formed using the photo mask. Unlike in a related method of forming a specific pattern using a photo mask including cell lines and pad lines, the photo mask is manufactured with cell lines and pad lines, the pad lines each including at least one space line. The photoresist layer is exposed and developed using the photomask to form the photoresist pattern. The etched layer is etched in accordance with the photoresist pattern to form the specific pattern. Therefore, it is possible to improve the pattern uniformity of the semiconductor device and thus to improve yield. | 2009-01-29 |
20090029560 | Apparatus and method for single substrate processing - In a method for treating a semiconductor substrate, a single substrate is positioned in a single-substrate process chamber and subjected to wet etching, cleaning and/or drying steps. The single substrate may be exposed to etch or clean chemistry in the single-substrate processing chamber as turbulence is induced in the etch or clean chemistry to thin the boundary layer of fluid attached to the substrate. Megasonic energy and/or disturbances in the chamber surfaces may provide the turbulence for boundary layer thinning. According to another aspect of a method according to the present invention, megasonic energy may be directed into a region within the single-substrate process chamber to create a zone of boundary layer thinning across the substrate surface, and a single substrate may be translated through the zone during a rinsing or cleaning process within the chamber to optimize cleaning/rinsing performance within the zone. | 2009-01-29 |
20090029561 | Semiconductor processing apparatus - There is provided a semiconductor processing apparatus comprising a processing tube for housing a substrate support member that supports a plurality of substrates stacked at a prescribed pitch in a vertical direction; a gas supply part that extends in a direction in which the substrates are stacked in the processing tube and that has a plurality of gas supply openings; an exhaust part that opens onto the processing tube; a gas rectifying plate that is disposed in a space between a penumbra of the substrates supported on the substrate support member and an inner wall of the processing tube, and that extends from the gas supply part in a circumferential direction of the processing tube and in the direction in which the substrates are stacked; and a gas flow regulating part disposed in a space in the processing tube that is above a top-most gas supply opening and a top-most substrate and in a space in the processing tube that is below a bottom-most substrate and a bottom-most gas supply opening. A thin film formed on the substrate can be made more uniform. | 2009-01-29 |
20090029562 | Film formation method and apparatus for semiconductor process - A film formation method for a semiconductor process includes placing a plurality of target objects at intervals in a vertical direction inside a process container of a film formation apparatus. Then, the method includes setting the process container to have a first vacuum state therein, and supplying a first film formation gas containing a hydrocarbon gas into the process container, thereby forming a carbon film by CVD on the target objects. Then, the method includes setting the process container to have a second vacuum state therein, while maintaining the process container to have a vacuum state therein from the first vacuum state, and supplying a second film formation gas containing an organic silicon source gas into the process container, thereby forming an Si-containing inorganic film by CVD on the carbon film. | 2009-01-29 |
20090029563 | METHOD AND APPARATUS FOR MANUFACTURING SEMICONDUCTOR NANOPARTICLES - A method for producing semiconductor nanoparticles, wherein a reaction for forming nuclei of the semiconductor nanoparticles and a reaction for growing the nuclei of the semiconductor nanoparticles are performed in a stepwise manner. An apparatus for producing semiconductor nanoparticles includes a continuous reaction apparatus for performing a reaction for forming nuclei of semiconductor nanoparticles and a batch reaction apparatus for performing a reaction for growing the semiconductor nanoparticles. | 2009-01-29 |
20090029564 | PLASMA TREATMENT APPARATUS AND PLASMA TREATMENT METHOD - In a plasma oxidation treatment apparatus | 2009-01-29 |
20090029565 | Socket for a Towing Apparatus - A socket for a towing apparatus for releasably coupling a motor vehicle trailer, includes a housing having a front housing section for receiving a trailer-side plug-in connector and a cable outlet for motor vehicle-side cabling. A first axis of the housing extends in the insertion direction of the plug-in connector, and a second axis extends axially with respect to the cable outlet. The two axes enclose an angle which is less than 180°. | 2009-01-29 |
20090029566 | CARD EDGE CONNECTOR POSITIONING APPARATUS - A card edge connector positioning apparatus has a first retaining trough, a second retaining trough and a support member. The first retaining trough is closer to a distal end of the positioning apparatus than the second retaining trough. The support member has a first edge and a second edge at two opposite sides. The first edge is wedged in the first retaining trough to form a movement fulcrum. The second edge is held in the second retaining trough to form a gap greater than that of the first edge in the first retaining trough. Thus the second edge has a greater displacement in the second retaining trough than that of the first edge in the first retaining trough. Thereby a displacement space for installation tolerance is formed for the support member. | 2009-01-29 |
20090029567 | LOW PROFILE ELECTRICAL CONNECTOR - An electrical connector ( | 2009-01-29 |
20090029568 | Electrical connector - An electrical connector comprises an insulation body, a plurality of terminals, and an elastic part; the insulation body is provided with the first and the second sidewalls oppositing to each other; an accommodation space being formed and enclosed in the first and second sidewalls for accommodating a chip module. Each terminal is accommodated in the insulation body and is provided with an elastic arm protruding and stretching into the accommodation space; the elastic arm is provided with a contact portion for contacting an electrically conductive slice of the chip module. The elastic part is accommodated in the insulation body and used to precisely locate the electrically conductive slice and the contact portion. Being pressed downwards, the electrically conductive slice of the chip module presses the elastic arm, and the elastic arm bends toward the second sidewall and deforms, so that the chip module moves toward the second sidewall. | 2009-01-29 |
20090029569 | BREAK APART POWER CONNECTOR - In one embodiment of the present invention a break apart power connector (e.g., for use with a personal computer power supply) is provided. In one example, the connector may comprise an integrally molded body portion, a plurality of electrical connecting elements mounted to the integrally molded body portion and a score line disposed on integrally molded body portion (the score line may permit the integrally molded body portion to be broken into at least two pieces). In another example, the connector may comprise an integrally molded body portion, a plurality of electrical connecting elements mounted to the integrally molded body portion and a hinge disposed on integrally molded body portion (the hinge may permit the integrally molded body portion to be broken into at least two pieces). | 2009-01-29 |
20090029570 | Relay substrate and substrate assembly - According to an aspect of an embodiment, a substrate for connecting circuit boards comprises: a substrate member having a first surface and a second surface facing each other and a first end and a second end facing each other; a first signal line formed on the first surface of the first end; a second signal line formed on the second surface of the second end; a third signal line connecting the first signal line with the second signal line; a first ground plane arranged on the first surface and surrounding the first signal line; and a portion of the second signal line formed over the first ground, the portion comprising narrower than an other portion of the second signal line. | 2009-01-29 |
20090029571 | SOCKET HAVING FASTENING MECHANISM FOR RECEIVING SENSOR - A socket connector for settling an integrated circuit module therein and connecting a sensor therewith comprises a base, a center plate mounted on the base, a plurality of contacts retained on the center plate and a retaining member. The base defines a slot for receiving the retaining member and a fastening hole for receiving the sensor, the retaining member comprises a blocking abutting against the sensor received in the fastening hole and a spring urging the blocking toward the sensor. | 2009-01-29 |
20090029572 | Electrical connector - An electrical connector for a circuit board has a housing and a receiving recess portion for receiving a mating connector. A plurality of terminals is arranged in a terminal groove. The terminal has an attachment portion fitted to the housing and an elastic portion extending along the receiving recess portion. The elastic portion has a suspended arm portion, a bottom arm portion, and a rising arm portion. The rising arm portion has a contact portion on an upper edge position and an abutting portion below the contact portion. | 2009-01-29 |
20090029573 | Contact Device - A contact device is provided, the device having at least a first contact region for electrical connection to an electric line and at least a second contact region for electrical connection to a flexible printed circuit board other contact medium which may damaged by repeated soldering. The first contact region and the second contact region are electrically connected. Between the first contact region and the second contact region, a third region is provided which has a lower thermal conductivity per unit length than the first contact region and/or the second contact region. | 2009-01-29 |
20090029574 | Board Connector - A board connector ( | 2009-01-29 |
20090029575 | Electrical connector and method of making contacts thereof - An electrical connector ( | 2009-01-29 |
20090029576 | ROTARY RECEPTACLE ASSEMBLY - A new rotary receptacle assembly comprises a frame assembly and a drum assembly journaled to the frame assembly so that the drum assembly may rotate relative to the frame assembly. Mounted to the drum assembly is at least one receptacle. A motor assembly may be mounted to one of the frame assembly and the drum assembly for imparting rotary motion to the drum assembly relative to the frame assembly. A clutch assembly disposed on the frame assembly or the drum assembly is coupled to motor assembly. A sensor assembly is mounted on the drum assembly and operably coupled to the motor assembly via a rotation control circuit for preventing the motor assembly from operating when an object is detected by the sensor assembly. | 2009-01-29 |
20090029577 | Rotating Power Outlet Assembly or Door - The present invention is an accessory jack for use in an interior panel of an automobile, having a rotating assembly, including two or more sides. An accessory jack is operably associated with the rotating assembly and a pivot point. In a first embodiment, the pivot point is located in the center of the rotating assembly equidistant from the two or more sides, along a substantially vertical axis. In a second embodiment, the pivot point is located where one of the two or more sides connects to another of the two or more sides, along a substantially vertical axis. The rotating assembly rotates about the pivot point, exposing the accessory jack, making the accessory jack available for use. | 2009-01-29 |
20090029578 | ELECTRICAL SOCKET WITH SAFETY COVER - An electrical socket that includes at least two electrical terminals each operatively engagable by a respective prong of an electrical plug by insertion into a respective opening of a housing of the electrical socket. A cover plate is provided to, in one position cover the openings of the housing and in another position expose the openings of the housing through corresponding apertures through the cover plate. The cover plate is mounted for slidable linear movement between the one position and another position relative the housing. There is a surface or surfaces presented by the cover plate non-parallel (and preferably lateral) to the direction of movement to abut a stop surface(s) of the housing that prevent advancement of the cover plate towards the another position when only one aperture is engaged by an object to move the cover plate by virtue of a non linear movement of the cover plate relative to said housing. | 2009-01-29 |
20090029579 | CONNECTOR AND A CONNECTOR ASSEMBLY - A wire cover ( | 2009-01-29 |
20090029580 | HELICAL CONTACT CONNECTOR SYSTEM - A connector system (C) for forming an electrical connection between two electronic or electrical assemblies includes a conductive tubular female member ( | 2009-01-29 |
20090029581 | ELECTRICAL PLUG/SOCKET ADAPTOR - An electrical plug/socket adaptor for establishing an electrical connection between a electrical plug and an electrical socket, said adaptor comprising a housing with at least one electrical plug receiving zone to receive an electrical plug of a kind selected from at least one of a Euro pin electrical plug, British pin electrical plug, North America pin electrical plug, and Australia pin electrical plug, the adaptor configurable to itself be capable of being operatively plugged into an electrical socket of a kind selected from at least two of a Euro pin electrical socket, British pin electrical socket, North America pin electrical socket, and Australia pin electrical socket. | 2009-01-29 |
20090029582 | Tamper-Evident Connector - Embodiments of a tamper-evident connector are disclosed which may optionally be used in a trusted computing environment. In an exemplary embodiment, a tamper-evident connection includes a mate-once engaging assembly for providing with a first component, the mate-once engaging assembly including a foldable portion. The tamper-evident connection also includes a receiving chamber for providing with a second component, the mate-once engaging assembly fitting in the receiving chamber to physically secure the first component to the second component, the foldable portion of the mate-once engaging assembly unfolding during removal of the mate-once engaging assembly from the receiving chamber to provide evidence of tampering when the first component has been removed from the second component. Optionally, the first component is a Trusted Platform Module (TPM) and the second component is a system board. | 2009-01-29 |
20090029583 | Touch-Safe Socket - A touch-safe socket having current-carrying poles ( | 2009-01-29 |
20090029584 | Electrical Connector and Connector Assembly - An electrical connector includes an inner plug housing having a front end portion that is received in a hood of a receptacle connector. The hood has at least one engaging member extending there from. An outer plug housing at least partially surrounds the hood. The outer plug housing is displaceable relative to the inner plug housing in a direction of insertion and removal of the inner plug housing from the hood. At least one engaging arm extends in a space between the outer plug housing and the inner plug housing that engages the engaging member on the hood. The outer plug housing has an engagement release portion opposing the engaging arm that interferes with the engaging arm to disengage the engaging arm from the engaging member when the outer plug housing is moved in the direction of removal of the inner plug housing from the hood. | 2009-01-29 |
20090029585 | Rotatably Locking Plug and Connector - An apparatus for coupling an electrical connector to a cable is provided. The apparatus includes an electrical connector having at least one tab extending radially out from the electrical connector and a housing rotatably coupled to the electrical connector. The housing includes at least one first channel disposed along an interior of the housing, wherein the at least one tab is configured to slidably engage the first channel. The housing also includes a spacer applying a first force in a first direction to the electrical connector. The housing also includes at least one tab retention member disposed along the interior of the housing, wherein the tab retention member is annularly disposed from the first channel and prevents the electrical connector from traveling beyond a predetermined distance in the first direction. | 2009-01-29 |
20090029586 | PLUG-IN WIRING STRUCTURE OF OPTOELECTRONIC DEVICE - The present invention relates to a plug-in wiring structure of the photovoltaic device, which is applicable to thin-strap connection in electric or electronic apparatuses, such as the output connection of copper-made thin bus straps in a package of solar cell plates. The present invention is characterized in a specialized design that includes a U-shaped clip spring with multiple turnings and a U-shaped terminal so as to have a fixed connection of a thin-strap object. According to the inventive connection, the work procedure of packaging solar cell plates can be simplified and high reliability can be achieved in that it is free from tool for disassembly and can be performed with zero drawing force. The present invention is especially applicable to the package of large-scaled photovoltaic generation cell plates having output through multiple bus straps. | 2009-01-29 |
20090029587 | CABLE CONNECTING CONNECTOR - To provide a cable connecting connector having connection strength between a conductor and a contact by reducing the resistance at the time of collectively soldering cables with different diameters, it is configured of a horizontally elongated insulating housing, a plurality of contacts each having a base part to be secured to the insulating housing, and a connecting part having a same height in an up and down direction, and arranged in parallel to one another and perpendicular to a lengthwise direction of the insulating housing, and thermoplastic holding base parts each protruding from a flat surface of the insulating housing into between the contacts and facing the connecting parts thereof. | 2009-01-29 |
20090029588 | Connecting Module to be Used in Telecommunication and Data Technology - Disclosed is a connecting module which is to be used in telecommunication and data technology and comprises a housing, electric contacts for connecting wires and/or cables, and at least one fastening element that allows the connecting module to be fixed to an assembly frame. Said fastening element is embodied at least in two parts, encompassing a first fastening piece and a second fastening piece. The connecting module can be put on the assembly frame by means of the first fastening piece and can be locked on the assembly frame with the aid of the second fastening piece. | 2009-01-29 |
20090029589 | Coaxial cable connector assembly - An electrical connector assembly is provided for electrically connecting a plurality of coaxial cables to a circuit board. The assembly includes a housing having a mounting side portion configured to be mounted to the circuit board and a mating side portion opposite the mounting side portion. A plurality of coaxial cable connectors are held by the housing. Each coaxial cable connector includes an outer electrical contact and an inner electrical contact extending generally coaxially with each other. Each outer and inner electrical contact extends from a mating end portion on the mating side portion of the housing to a mounting end portion. The mounting end portion of each of the outer and inner electrical contacts is configured to be electrically connected to a corresponding electrical contact on the circuit board. The mating end portion of each of the outer and inner electrical contacts is configured to be electrically connected to an electrical contact of a corresponding one of the coaxial cables. | 2009-01-29 |
20090029590 | HIGH PERFORMANCE COAXIAL CONNECTOR - A high performance coaxial connector used to terminate a coaxial cable and provide an electrical connection to a mating coaxial connector is disclosed. The coaxial connector is formed with few individual parts and may be configured to provide enhanced electrical performance greater than or equal to 4 GHz. | 2009-01-29 |
20090029591 | ELECTRICAL CONNECTOR AND ITS ASSEMBLY METHOD - An electrical connector and its assembly method, in which the electrical connector includes an insulator body and conductive terminals, wherein the insulator body has a first surface and a second surface and a plurality of through slots each including a first and a second terminal receiving slots, each conductive terminal including a first and a second sections respectively received within the first and the second terminal receiving slots, the second section being wider than the first terminal receiving slot, wherein the second section of each terminal and the sidewall of the second terminal receiving slot form a cooperating structure close to the second surface for preventing the withdrawing of the terminal from the through slot. According to the present invention, there is no need to provide several barbs on each terminal for pressed fitting with the insulator body. Thus, the walls of the insulator body will not be damaged. | 2009-01-29 |
20090029592 | CONNECTOR - The present invention provides a connector which can take an EMI measure for the first and second housings and can move the second housing with respect to the first housing. The connector comprises a plug which is provided so as to be movable with respect to the socket; a plurality of socket terminals which are resiliently deformed with a movement of the plug; a first socket side shield member which covers an outer circumference surface in the width direction of the socket; a plurality of plug terminals which are in contact with each of the socket terminals when the plug is mated with the socket; a plug side shield member which covers an outer circumference surface in the width direction of the plug; and first and second shield conductive portions which are in contact with each of the shield members and are resiliently deformed as the plug is moved. | 2009-01-29 |
20090029593 | MULTI-PORT CONNECTOR FOR INTEGRATING TRANSMISSION INTERFACES OF DISPLAYPORT AND USB - A multi-port connector for integrating the transmission interfaces of DisplayPort and USB, includes a seat body, a DisplayPort, a USB connector, a sealing lid, and a hollow outer shell. At an upper portion of the seat body, there is a rabbet, under which a connecting trough is arranged. At back of the seat body, there is a recessing part, at upper portion of which an assembling opening is arranged, which is communicated to the rabbet. A plurality of fissures are arranged on a wall of the recessing part. The DisplayPort is assembled in the rabbet, while the USB connector is assembled in the connecting trough. The sealing lid is assembled and connected in the recessing part at back of the seat body. A bulger arranged at the sealing lid is assembled and connected in the assembling opening of the recessing part. On a wall surface of the sealing lid, there are a plurality of striping ribs, which are snapped into the fissures. The hollow outer shell externally fitted to the seat body is arranged a first perforation and a second perforation at front side face thereof. The first and second perforations respectively correspond to a plug-in opening and a USB slot, while a set of assembling-and-connecting legs are extended at a bottom side face of the hollow outer shell. The multi-port connector is to provide a plug-in function for the transmitting lines of the Displayport and the USB. | 2009-01-29 |
20090029594 | DEVICE CONNECTOR - A device connector to be connected with device-side terminals accommodated in a metal case (C) is provided with a first housing ( | 2009-01-29 |
20090029595 | Electrical card connector - An electrical card connector ( | 2009-01-29 |
20090029596 | MOLDED ELECTRICAL SOCKET - A molded lamp socket. The molded lamp socket includes a lamp base body molded from a first plastic material providing a socket cavity with an opening for receiving a lamp bulb. The molded lamp socket also includes a lead extending from a first contact portion disposed in the socket cavity to a second contact portion spaced from the socket cavity. The molded lamp socket also includes a mounting body molded from a second plastic material providing a plug cavity encircling the second contact portion. The mounting body is overmolded with respect to the lamp base body. | 2009-01-29 |
20090029597 | Vertical extender for an electrical outlet which protects pets and children from shock hazards - An easily added extender for existing electric outlets with at least one electric outlet of its own which can be positioned beyond the reach of children and pets. | 2009-01-29 |
20090029598 | Board connector, mating connector, and electronic device including the same - A board connector has a plurality of contacts, an insulator holding the plurality of contacts, and a shell covering at least a part of the insulator. Each contact has an SMT terminal to be connected to a wiring pattern on a board. The insulator has a first insulator portion extending in an X-direction and two second insulator portions each extending in a Y-direction perpendicular to the X-direction. The first insulator portion has a bottom surface and first ends in the X-direction. Each second insulator portion has second ends. Each second insulator portion extends from the first ends to the second ends, respectively. The second ends are positioned on an imaginary straight line. The first insulator portion, the second insulator portions, and the imaginary straight line define a predetermined area. The SMT terminals are held by the insulator so that the SMT terminals are positioned within the predetermined area. | 2009-01-29 |
20090029599 | COMPUTER NETWORK CONNECTOR - A connector includes an insert including contacts having free parts to receive homologous flat contacts of a plug. The insert further includes a rotation axis about which the insert can be rotated and spring means urging the insert toward the position that it assumes when no plug is present. The insert can include, at the sides, long curved contacts and, in a central portion, shorter curved contacts, the points of contact of the contacts of the insert with the flat contacts of a plug being substantially aligned over all the contacts. | 2009-01-29 |
20090029600 | Electrical connector with suppressed crosstalk - An electrical connector ( | 2009-01-29 |
20090029601 | Connector and electronic apparatus including the same - A connector comprises an insulator, a plurality of contacts, and a mold-in shell. The plurality of contacts and the mold-in shell are integrally formed with the insulator. The mold-in shell has a first body, a second body, and coupling portions. The coupling portions couples the first body and the second body so that the first body and the second body differ in positions in a Z-direction. | 2009-01-29 |
20090029602 | ADAPTER FOR INTERCONNECTING ELECTRICAL ASSEMBLIES - An electrical connector suitable for use in an adapter. The connector includes conductive elements that can be routed in three dimensions to facilitate interconnections between connectors used to form an adapter. Simplified construction is achieved through use of connector wafers, each of which route signals in a plane such that when the wafers are organized side-by-side in a connector, signals may be routed through multiple parallel planes. Some of the wafers may include holes through which conductive elements from other wafers may pass, to that signal may be routed in a third dimension, perpendicular to the parallel planes. The adapter may be mounted on a printed circuit board or other substrate with active components. Signals may pass through the adapter in one of the parallel planes or may be routed for conditioning in the active components. | 2009-01-29 |
20090029603 | ELECTRICAL APPARATUS AND METHOD OF MANUFACTURING THE SAME - An electrical apparatus connected to a commercial power source includes: a case made of resin and housing a functional member; blades insert-molded in the case and each having an exposed part connected to the commercial power source and a resin facing part which is enclosed by the resin and all along an outer periphery of which a groove is formed; and elastic members each disposed between the resin and the resin facing part and having a fitting convex coming into close contact with the groove at the time of the insert molding. | 2009-01-29 |
20090029604 | Screw connecting terminal and method for its production - The disclosure relates to a screw connecting terminal which comprises a clamping part, which is essentially in the form of a frame and has longitudinal, narrow and broad faces, a clamping screw which is held in a threaded opening in the clamping part, and a busbar which passes through the interior of the frame-like clamping part and is arranged such that it can move with respect to the clamping part, and whose broad face when in the installed state is oriented parallel to the broad face of the clamping part, with the clamping part being movable in its longitudinal direction relative to the busbar by rotation of the clamping screw, such that a connecting conductor can be clamped firmly between the side of the busbar which faces away from the clamping screw and the broad face of the clamping part which faces away from the clamping screw. | 2009-01-29 |
20090029605 | Female Connector Terminal and Female Connector - A female connector terminal into which a rectangular male connector terminal is to be inserted includes a hollow conductor having a rectangular engagement portion for inserting the male connector terminal; a protrusion arranged at the engagement portion of the conductor and brought into contact with the male connector terminal; and a plate spring arranged at the conductor engagement portion to face the protrusion so as to sandwich the male connector terminal together with the protrusion. The plate spring has an abutment portion formed by bending a plate member and is brought into abutment with both sides of the male connector terminal contact surface which is brought into contact with the plate spring. | 2009-01-29 |
20090029606 | COMBINATION ELECTRICAL CONNECTOR - An electrical connector for connecting to an electrical apparatus within a high power circuit includes an electrical contact and an enclosure. The electrical contact is configured to connect to a bushing of an electrical apparatus within a high power circuit. The electrical contact extends along a first direction from a coupling region. The enclosure extends from the coupling region in a second direction that is nonparallel to the first direction. The enclosure includes two or more electrical devices, with each electrical device being connected to the electrical contact within the coupling region and providing a current path from the electrical apparatus to at least one external coupling device within the high power circuit. | 2009-01-29 |
20090029607 | Propeller power transmission device for 1-engine, 2-shaft vessel - A propeller power transmission device according to the present invention comprises an input shaft | 2009-01-29 |
20090029608 | WATERCRAFT HAVING INDEPENDENT DRIVE INPUTS - A watercraft comprises a hull, and a propulsion system coupled to the hull. The propulsion system comprises at least two propulsion discs, at least two drive inputs, and a differential coupled to the drive inputs. Each drive input is coupled to a respective one of the propulsion discs. The differential includes a power control input and is configured to vary a delivery of power from the drive inputs to the propulsion discs in accordance with the power control input. | 2009-01-29 |
20090029609 | FRESH WATER FLUSHING SYSTEM FOR BOAT ENGINES - The present invention is a system and method for flushing marine engines with fresh water comprising a three way valve configured to receive three hose connections, a fresh water inlet; hoses to connect said valve to a marine engine; and union rings at the junction of each hose connection. | 2009-01-29 |
20090029610 | Surfboard horizontal fin - 1. The Horizontal Fin is a marine vessel mechanism. It manufactures propulsion without the use of an engine, moving parts, or fuel. This assistance reduces human paddling labor. | 2009-01-29 |
20090029611 | MULTIFUNCTION SAFETY GARMENT - A safety garment comprising; a garment body arranged for location on a torso of a wearer. The garment body includes openings to accommodate a wearers neck and arms and means for securing the garment to the torso of a wearer. The vest includes a space on the garment which receives and retains weights and a buoyancy apparatus providing means to allow a wearer to select a required amount of buoyancy. The vest also includes a harnessing assembly to allow attachment of the safety garment to a load line, the harnessing assembly allowing a user to be winched to safety allowing the garment to support the weight of a person wearing the garment. | 2009-01-29 |
20090029612 | Reinforcing woven fabric and process for producing the same - To provide a reinforcing woven fabric, which is excellent in deformability, capable of following a complicated shape and excellent in retention of the shape, and a preform using it, a fiber reinforced plastic molded component and a process for producing them. Provided is a reinforcing woven fabric where a resin material is stuck on at least one surface of a fabric substrate containing a plurality of reinforcing fiber bundles, then the resin material stuck over two or more reinforcing fiber bundles is peeled from a part of the two or more reinforcing fiber bundles by varying the relative position of a plurality of reinforcing fiber bundles constituting the fabric substrate, wherein the maximum value of load till a tensile strain in a non fiber axial tensile test reaches 1% is in a range of 0.01 to 0.75 N. | 2009-01-29 |
20090029613 | Fail safe protective wrapping - Electrically conductive paths are positioned in and extend transversely across the width of the backing of strips of wrapping material. The electrically conductive paths provide means for conducting electrical current through spirally wrapped protective materials from the surrounding earth to voids formed adjacent the overlapped edges of the wrapping material and thus permit cathodic protection for pipe surfaces exposed to voids formed as a result of improper application or bonding failures of the wrapping material. | 2009-01-29 |