06th week of 2017 patent applcation highlights part 52 |
Patent application number | Title | Published |
20170040095 | SUPERCONDUCTING DEVICE AND METHOD FOR INDUCING LOW RELAXATION RATE IN SUPERCONDUCTING MATERIAL - Provided are devices for inducing a current in a closed loop superconducting material including a magnetic field source housed within a coil former substantially coaxial with the magnetic field source, and a base optionally in physical contact with a support tube. A closed loop superconducting material is held in a loop position by the coil former and the base such that current passing through the magnetic field source will produce a current in the superconducting material by induction. By a process of modified current sweep reversal, the rate of relaxation may be reduced in the superconducting material relative to the absence of a reversal. | 2017-02-09 |
20170040096 | NOISE SUPPRESSION MEMBER - A noise suppression member comprising: a plurality of magnetic cores, and a case for arranging and housing the plurality of magnetic cores; the noise suppression member being configured such that a restraining member can be attached, the restraining member restraining a cable in a state of contact with an inner periphery of the plurality of magnetic cores at a location between an adjacent two of the plurality of magnetic cores, by coming into contact with the cable passing through an inner peripheral side of the plurality of magnetic core. | 2017-02-09 |
20170040097 | SWITCHING CONVERTER CIRCUIT WITH AN INTEGRATED TRANSFORMER - A switching converter circuit has an integrated transformer, wherein the transformer has a double loop magnetic structure with an E I core geometry, wherein the primary and secondary windings are placed side by side on the center leg of the E-part of the core, wherein the air gap is placed at the far end of the primary winding between the free end of the center leg and the I-part of the core. | 2017-02-09 |
20170040098 | COIL UNIT - A coil unit includes a ferrite including a coil base in a form of a frame, on which a coil is arranged, and formed from a plurality of divided ferrites. The plurality of divided ferrites include a first divided ferrite and a second divided ferrite which form a corner piece and a third divided ferrite and a fourth divided ferrite which form a side piece. | 2017-02-09 |
20170040099 | ELECTROMAGNETIC APPARATUS AND METHOD FOR PROVIDING THE SAME - An electromagnetic apparatus including a static electromagnetic device is provided. The static electromagnetic device includes a yoke and at least three limbs comprising windings for forming a magnetic core of the static electromagnetic device wherein an angle between the at least three limbs is equal and at least one of the at least three limbs or the yoke comprises a duct. | 2017-02-09 |
20170040100 | CORE PIECE AND REACTOR - The present invention provides a core piece and a reactor that have excellent bondability to a resin portion and are capable of reducing the generation of eddy currents. The core piece is a core piece that constitutes a magnetic core disposed within or outside a coil formed of a wound wire, the core piece including an end surface that is orthogonal to a magnetic flux flowing through the coil and to which a resin portion is bonded, wherein the end surface has an intersecting groove in which a plurality of grooves intersect without forming a loop. The core piece may be, for example, a powder compact made of metal particles and an insulating material present between the metal particles. The core piece may constitute, for example, a portion of the magnetic core, the portion being disposed within the coil. | 2017-02-09 |
20170040101 | COIL ELECTRONIC COMPONENT AND METHOD OF MANUFACTURING SAME - A coil electronic component includes a magnetic body having an internal coil part embedded therein, in which the internal coil part includes an insulating substrate, a first insulator, a coil conductor, and a second insulator. The first insulator is disposed on at least one of first and second main surfaces of the insulating substrate and has a groove formed therein. The coil conductor is formed inside the groove. The second insulator encloses the insulating substrate, the first insulator, and the coil conductor. The first insulator may be formed to a thickness larger than (and no more than 40 μm thicker than) a thickness of the coil conductor on the insulating substrate. The first insulator may be formed to a width of 3 μm to 50 μm. Further, the second insulator may extend to a thickness 1 μm to 20 μm larger than that of the first insulator on the insulating substrate. | 2017-02-09 |
20170040102 | Core Component - A core component is disclosed. In an embodiment, the core component includes at least one edge that has a transition, wherein the transition is asymmetrical. | 2017-02-09 |
20170040103 | VARIABLE INDUCTOR - First and second coils are disposed coaxially with a gap provided therebetween and are configured to mutually cancel out magnetic fields provided thereby. A receptacle portion that defines a space traversing at least a portion of a magnetic flux produced by the coils is provided, and a magnetic powder is contained in the receptacle portion so as to occupy a portion of the space. The magnetic powder moves within the space, and this movement produces a change in the magnetic flux. This change in the magnetic flux appears in the form of a change in the inductance value. | 2017-02-09 |
20170040104 | IGNITION COIL FOR INTERNAL COMBUSTION ENGINE - An ignition coil for internal combustion engines is provided which includes magnetically coupled primary and secondary coils, a case, a high-voltage tower, a resistor, and resin packed in the case. The case has the primary coil and the secondary coil disposed therein. The high-voltage tower is attached to a tower mount formed on a front end of the case. The resistor is embedded in the high-voltage tower with a front and a base end surfaces thereof exposed from the high-voltage tower. The resin is packed in the case to seal the primary coil and the secondary coil. This structure enhances the productivity of an assembly of the high-voltage tower and the resistor. | 2017-02-09 |
20170040105 | METHOD OF FABRICATING A SINGLE STRUCTURE MULTI MODE ANTENNA FOR WIRELESS POWER TRANSMISSION USING MAGNETIC FIELD COUPLING - A method of fabricating a single structure multiple mode antenna is described. The antenna is preferably constructed having a first inductor coil that is electrically connected in series with a second inductor coil. The antenna is constructed having a plurality of electrical connections positioned along the first and second inductor coils. A plurality of terminals is connected to the electrical connections that facilitate numerous electrical connections and enables the antenna to be selectively tuned to various frequencies and frequency bands. | 2017-02-09 |
20170040106 | Device for forming a toroidal coil and method for forming a toroidal coil - The device comprises an annular guide component ( | 2017-02-09 |
20170040107 | METHOD OF PROVIDING A SINGLE STRUCTURE MULTI MODE ANTENNA FOR WIRELESS POWER TRANSMISSION USING MAGNETIC FIELD COUPLING - A method of providing a single structure multiple mode antenna is described. The antenna is preferably constructed having a first inductor coil that is electrically connected in series with a second inductor coil. The antenna is constructed having a plurality of electrical connections positioned along the first and second inductor coils. A plurality of terminals is connected to the electrical connections that facilitate numerous electrical connections and enables the antenna to be selectively tuned to various frequencies and frequency bands. | 2017-02-09 |
20170040108 | CAPACITOR - A capacitor that includes a conductive porous base material; an electrode layer; a dielectric layer between the conductive porous base material and the electrode layer; and an extended electrode on the electrode layer, where the electrode layer has a chlorine content of 2.0 at % or less. | 2017-02-09 |
20170040109 | Capacitor - A capacitor that includes a conductive porous base material; an electrode layer; a dielectric layer between the conductive porous base material and the electrode layer; and at least one silicon-containing layer between the dielectric layer and the electrode layer. | 2017-02-09 |
20170040110 | CAPACITOR STRUCTURES WITH EMBEDDED ELECTRODES AND FABRICATION METHODS THEREOF - Capacitor structures having first electrodes at least partially embedded within a second electrode, and fabrication methods are presented. The methods include, for instance: providing the first electrodes at least partially within an insulator layer, the first electrodes comprising exposed portions; covering exposed portions of the first electrodes with a dielectric material; and forming the second electrode at least partially around the dielectric covered portions of the first electrodes, the second electrode being physically separated from the first electrodes by the dielectric material. In one embodiment, a method further includes exposing further portions of the first electrodes; and providing a contact structure in electrical contact with the further exposed portions of the first electrodes. In another embodiment, some of the first electrodes are aligned substantially parallel to a first direction and other of the first electrodes are aligned substantially parallel to a second direction, the first and second directions being different directions. | 2017-02-09 |
20170040111 | MULTILAYER CERAMIC ELECTRONIC COMPONENT AND MANUFACTURING METHOD THEREOF - A multilayer ceramic electronic component includes: a capacitor body including a plurality of dielectric layers and a plurality of internal electrodes; with external electrodes disposed on the capacitor body and electrically connected to the internal electrodes, wherein the capacitor body includes an active region in which internal electrodes having different polarities from each other overlap each other to form capacitance, and a margin part defined as region except for the active region. A concentration of an additive element in the margin part is higher than the concentration of the additive element in the active region, and the margin part has a concentration gradient of the additive element from a surface of the capacitor body toward the active region. | 2017-02-09 |
20170040112 | METHOD OF MANUFACTURING CERAMIC ELECTRONIC COMPONENT, AND CERAMIC ELECTRONIC COMPONENT - A method of manufacturing a ceramic electronic component including a main body including a first principal surface and a second principal surface opposite to each other, and a first external electrode and a second external electrode provided on a portion of a surface of the main body, includes providing a plurality of recesses in a first principal surface of a laminated block including a ceramic material and an organic substance by relatively moving the laminated block and a protrusion surface including a protrusion, in a direction along the first principal surface of the laminated block with the protrusion surface being in contact with a first principal surface of the laminated block, obtaining a chip by cutting the laminated block including the recesses, and obtaining the main body by firing the chip. | 2017-02-09 |
20170040113 | CAPACITOR - A capacitor that includes a conductive porous base material having a plurality of pores; a dielectric layer on the conductive porous base material; and an upper electrode on the dielectric layer and sealing openings of at least some of the plurality of pores of the conductive porous base material. | 2017-02-09 |
20170040114 | CAPACITOR AND MANUFACTURING METHOD THEREFOR - A capacitor that includes a conductive porous base material that has a porous part at a first principal surface thereof, and a second principal surface opposite the first principal surface; a dielectric layer on the porous part; an upper electrode on the dielectric layer; and a conductive material layer on the second principal surface of the conductive porous base material. | 2017-02-09 |
20170040115 | ELECTRODE FOIL FOR ALUMINUM ELECTROLYTIC CAPACITOR AND PRODUCTION METHOD FOR SAME - The present invention provides an electrode foil for aluminum electrolytic capacitors in which breakage is less likely to occur even when chemical conversion treatment is performed under conditions susceptible to stress such as on a production line, and that can securely provide high capacitance. The electrode foil for aluminum electrolytic capacitors according to the present invention contains a sintered body of at least one aluminum or aluminum alloy powder, and a substrate supporting the sintered body. The substrate is an aluminum foil containing 50 to 20,000 ppm by weight of Mn. Since the electrode foil for aluminum electrolytic capacitors contains an aluminum foil containing a predetermined amount of Mn as a substrate, breakage is less likely to occur even when chemical conversion treatment is performed. | 2017-02-09 |
20170040116 | Multiple Leadwires Using Carrier Wire for Low ESR Electrolytic Capacitors - A solid electrolytic capacitor including a capacitor element, a first anode lead, a second anode lead, and a carrier wire. The capacitor element includes a sintered, porous anode body; a dielectric layer overlying the sintered, porous anode body; and a cathode overlying the dielectric layer that includes a solid electrolyte. The first and second anode leads each have an embedded portion positioned within the anode body and an external portion extending longitudinally from a surface of the anode body in an x-direction, while the carrier wire is positioned external to the anode body. Further, a first portion of the carrier wire is connected to the external portions of the first and second anode leads, while a second portion of the carrier wire extends longitudinally away from the surface of the anode body in the x-direction. Such an arrangement reduces the ESR and leakage current of the capacitor. | 2017-02-09 |
20170040117 | SOLID ELECTROLYTIC CAPACITOR AND BOARD HAVING THE SAME - A solid electrolytic capacitor includes a capacitor body including a sintered body of tantalum powders; an anode wire having a first region in a width direction embedded in the capacitor body and a second region in the width direction led through one surface of the capacitor body; an encapsulant part enclosing the capacitor body and the anode wire; an anode terminal disposed on an outer surface of the encapsulant part and connected to the anode wire; a cathode terminal spaced apart from the anode terminal and disposed on the outer surface of the encapsulant part; and a cathode lead portion electrically connecting the capacitor body and the cathode terminal to each other, wherein at least one of the anode wire and the cathode lead portion is provided in plural. | 2017-02-09 |
20170040118 | Low ESR Anode Lead Tape for a Solid Electrolytic Capacitor - A solid electrolytic capacitor including a capacitor element and an anode lead assembly is provided. The capacitor element includes a sintered, porous anode body; a dielectric layer overlying the sintered, porous anode body; and a cathode overlying the dielectric layer that includes a solid electrolyte. The anode lead assembly includes an anode lead tape having an embedded portion positioned within the anode body and an external portion extending from a surface of the anode body in a longitudinal direction, where the width of the anode lead tape is greater than the height of the anode lead tape. Meanwhile, a carrier lead wire is positioned external to the anode body and includes a first portion and a second portion. The first portion has a substantially planar surface that is connected to the substantially planar surface of the external portion of the anode lead tape. | 2017-02-09 |
20170040119 | PHOTOELECTRIC CONVERSION ELEMENT, DYE-SENSITIZED SOLAR CELL, AND DYE-SENSITIZED SOLAR CELL MODULE - There is provided a photoelectric conversion element in which a porous semiconductor layer is prevented from being detached from an upper supporting body, wherein a photoelectric conversion layer, a collecting electrode, an insulating layer, and a counter electrode are disposed between an upper supporting body and a lower supporting body in this order from the upper supporting body side, the upper supporting body being located at a light incidence side and having a light transmission property, the lower supporting body being located opposite to the upper supporting body, the photoelectric conversion layer having a porous semiconductor layer, a carrier transport material being included between the upper supporting body and the lower supporting body, and an adhesion portion having a film thickness of 0.5 to 10 nm is disposed at least adjacent to and between the upper supporting body and the porous semiconductor layer. | 2017-02-09 |
20170040120 | ELECTRONIC DEVICE COMPRISING NANOGAP ELECTRODES AND NANOPARTICLES - An electronic device includes a substrate and at least two electrodes spaced by a nanogap, wherein the at least two electrodes are bridged by at least one nanoparticle and wherein the at least one nanoparticle has an overlap area with the at least two electrodes higher than 2% of the area of the at least one nanoparticle. A method of manufacturing the electronic device and the use of the electronic device in photodetector, transistor, phototransistor, optical modulator, electrical diode, photovoltaic cell or electroluminescent component are also described. | 2017-02-09 |
20170040121 | PHOTOELECTRIC CONVERSION ELEMENT, SOLAR CELL USING THE SAME, AND METHOD FOR MANUFACTURING PHOTOELECTRIC CONVERSION ELEMENT - Provided are a photoelectric conversion element including a first electrode having a photosensitive layer including a light absorber on a conductive support and a second electrode facing the first electrode, in which the light absorber includes a compound having a perovskite-type crystal structure and at least one compound selected from compounds represented by any formula of Formulae (3) to (5) below is provided on a surface of the first electrode, a solar cell, and a method for manufacturing a photoelectric conversion element. | 2017-02-09 |
20170040122 | POSITIVE ELECTRODE FOR A LITHIUM ION CAPACITOR AND LITHIUM ION CAPACITOR - A positive electrode for a lithium ion capacitor includes a positive electrode layer which, after a pretreatment for measurement, has a volume of pores having pore size of not lower than 1.0 nm and lower than 1.4 nm of not lower than 0.11 cc/g, calculated by an HK method, and total pore volume calculated by a BET method of not more than 1.1 cc/g. In the pretreatment: the positive electrode is taken out of a cell of cell voltage of 3 V, cut out and immersed in 10 cc of dehydrated acetonitrile per 1 cm | 2017-02-09 |
20170040123 | NITROGEN-DOPED CARBON AEROGELS FOR ELECTRICAL ENERGY STORAGE - Disclosed here is a method for making a nitrogen-doped carbon aerogel, comprising: preparing a reaction mixture comprising formaldehyde, at least one nitrogen-containing resorcinol analog, at least one catalyst, and at least one solvent; curing the reaction mixture to produce a wet gel; drying the wet gel to produce a dry gel; and thermally annealing the dry gel to produce the nitrogen-doped carbon aerogel. Also disclosed is a nitrogen-doped carbon aerogel obtained according to the method and a supercapacitor comprising the nitrogen-doped carbon aerogel. | 2017-02-09 |
20170040124 | NEGATIVE-ELECTRODE ACTIVE MATERIAL FOR LITHIUM ION CAPACITOR - This invention provides a negative electrode active material for lithium ion capacitor, which reduces the thickness of a negative-electrode active material layer while maintaining the conventional level of energy density. | 2017-02-09 |
20170040125 | ROTARY SWITCH DEVICE - A rotary switch device includes a fixed contact point part and a movable contact point part. The movable contact point part is rotated on the fixed contact point part so as to connect and disconnect the fixed contact point part and the movable contact point part. The fixed contact point part and the movable contact point part have contact surfaces which are band shapes and to which corrosion-resistant conductive processing is applied. A transient contact region, in which a contact point is moved from one end portion to the other end portion in a predetermined connection-operation angle from a contact start point with respect to the other of the fixed contact point part and the movable contact point part, is provided on each of the contact surfaces. | 2017-02-09 |
20170040126 | TOUCH SENSOR AND METHOD FOR MANUFACTURING THE SAME - A touch sensor includes a hollow tubular member that is elastic and insulative; and a first electrode wire and a second electrode wire held in the tubular member while being separated from each other. The first electrode wire and the second electrode wire contact with each other by elastic deformation when receiving an external pressure to the tubular member. The first electrode wire and the second electrode wire extend parallel to a central axis of the tubular member. A shape of a gap between the first electrode wire and the second electrode wire in a cross section orthogonal to the central axis of the tubular member is non-linear. | 2017-02-09 |
20170040127 | Key Surface Lighting - An illuminator may be coupled to the key cap of a key. The key cap may include a portion that is operable to be illuminated and one or more illuminators may be coupled thereto. In particular embodiments, keys may include power delivery systems that are operable to wirelessly transmit power from a power source to illuminators. Such power delivery systems can include inductive transmitters and/or receivers, ultrasonic transmitters and/or receivers, laser diodes and photodiodes, electrodes that capacitively couple to wirelessly transfer power, and so on. In various embodiments, keys may include interconnects that connect an illuminator with a power source. The interconnect may be a flexible material that includes one or more traces and is configured with a shape that bends and twists to allow movement without stretching. The interconnect may also be part of a movement or support mechanism of a key. | 2017-02-09 |
20170040128 | AUTOMATION CONTROL DEVICE - The present application includes an automation control device with a control panel, the control panel comprising at least one button with specified control function; and at least one luminous element located adjacent to the at least one button; wherein the at least one button is operable in a locked mode and a standby mode; in the locked mode, the press on the button would not trigger the specified control function of the button but would light up the at least one luminous element and switch the button into the standby mode; and in the standby mode, the at least one luminous element keeps in lighting, and the press on the button would trigger the specified control function of the button. The automation device is adapted for safe and correct operation in dim or dark environment. | 2017-02-09 |
20170040129 | LOCALIZED KEY-CLICK FEEDBACK - Disclosed herein are techniques and systems for providing simulated, haptic feedback that is local to physical, non-actuating keys of a keyboard. A keyboard includes a plurality of non-actuating keys defined in a cover portion of the keyboard, a plurality of force-producing mechanisms coupled to a substrate underneath and adjacent the cover portion. The force-producing mechanisms may be positioned on suspended portions of the substrate that are mechanically isolated and arranged on the substrate to substantially correspond to a layout of the plurality of non-actuating keys. The force-producing mechanisms may be individually actuated to deflect the suspended portions of the substrate underneath the cover portion to create a tactile sensation for a user's finger that is local to a particular key. In some embodiments, the force-producing mechanisms are piezoelectric actuators. | 2017-02-09 |
20170040130 | TIME SWITCH OF CONTROLLABLE TIME ADJUSTMENT - A time switch of controllable time adjustment, the time switch comprising a switch housing ( | 2017-02-09 |
20170040131 | Safety Switch - The invention relates to a safety switch ( | 2017-02-09 |
20170040132 | High Voltage Relay Systems and Methods - Various high voltage systems may benefit from a suitable relay system. For example, a relay box may be provided with a shock and vibration resistant arrangement including a sealed coil box within the sealed relay box. For example, an apparatus can include a coil box containing coils, inside pole pieces, and permanent magnets, wherein the coils, inside pole pieces, and permanent magnets can be configured to actuate an armature assembly external to the coil box. The apparatus can also include outside pole pieces configured to move a relay armature of the armature assembly responsive to energizing of the coils. Moving the relay armature can include overcoming a latching of at least one of the permanent magnets. | 2017-02-09 |
20170040133 | High Voltage Relay Systems and Methods - Various high voltage systems may benefit from a suitable relay system. For example, a relay box may be provided with a shock and vibration resistant arrangement including a sealed coil box within the sealed relay box. For example, an apparatus can include a coil box containing coils, inside pole pieces, and permanent magnets, wherein the coils, inside pole pieces, and permanent magnets can be configured to actuate an armature assembly external to the coil box. The apparatus can also include outside pole pieces configured to move a relay armature of the armature assembly responsive to energizing of the coils. Moving the relay armature can include overcoming a latching of at least one of the permanent magnets. | 2017-02-09 |
20170040134 | FUSE WITH INSULATED PLUGS - An improved fuse including a fuse body formed of an electrically insulative material. The fuse body defines a cavity which extends from a first end of the fuse body to a second end of the fuse body. A fusible element is disposed within the cavity and extends from a first end face of the first end of the fuse body to a second end face of the second end of the fuse body. Insulated plugs are disposed within the cavity at the first and second ends of the fuse body wherein the plugs adhere to an interior surface of the fuse body and form seals that close the internal cavity. The fuse may further include end terminations that are applied to the ends of the fuse body in electrical contact with the fusible element. | 2017-02-09 |
20170040135 | ELECTRICAL ENCLOSURE - A sealed electrical enclosure for housing an electrical component is provided. In one exemplary embodiment, the sealed electrical enclosure includes a housing, a first and second electrical connector, an actuator, and a terminal. The housing has a sealed interior when a top portion is coupled to a bottom portion. The first electrical connector extends from the sealed interior through the bottom of the housing and is electrically coupled to the electrical component. The actuator extends from the sealed interior through the housing and is configured to manipulate the electrical component. The terminal is electrically coupled to the second electrical connector. The second electrical connector is configured to mate with the first electrical connector. The first and second electrical connectors are configured to be connected and disconnected to attach and remove the housing to and from the terminal. | 2017-02-09 |
20170040136 | A FUSE ELEMENT, A FUSE, A METHOD FOR PRODUCING A FUSE, SMD FUSE AND SMD CIRCUIT - The invention relates to a fuse element ( | 2017-02-09 |
20170040137 | FUSE ARRANGEMENT - A fuse arrangement, including: at least a first terminal, a second terminal, and a fuse, wherein the first terminal and the second terminal may be electrically connected via the fuse, and wherein the fuse may be configured to be under fuse internal mechanical stress to deform the fuse along its width direction in case it is broken. | 2017-02-09 |
20170040138 | X-RAY WINDOW - An x-ray window, which may be utilized within an x-ray source or an x-ray detector is disclosed, and a method for manufacturing the same. The x-ray window may be permeable to soft x-rays. The x-ray window may have at least one surface in contact with a pressure essentially equal that of a vacuum. The x-ray window may be multilayered with a thickness of less than or equal to one micron. | 2017-02-09 |
20170040139 | Electron Beam Device - The present invention provides an electron beam device that achieves high spatial resolution and high luminance, while remaining insusceptible to the effects of external disturbance. The present invention relates to an electron beam device, wherein, between, e.g., an electron source for generating an electron beam and an objective lens for focusing the electron beam onto a sample, a high voltage beam tube is disposed close to the electron source and a low voltage beam tube is disposed close to the objective lens. This makes it possible to achieve high luminance while maintaining spatial resolution, even with an SEM that is provided with a type of objective lens that actively leaks a magnetic field onto a sample. | 2017-02-09 |
20170040140 | MAGNET ARRAY FOR PLASMA-ENHANCED CHEMICAL VAPOR DEPOSITION - Provided herein is an apparatus comprising a deposition chamber with a cathode, and a means for creating an asymmetric field about the cathode. | 2017-02-09 |
20170040141 | HIGH THROUGHPUT COOLED ION IMPLANTATION SYSTEM AND METHOD - An ion implantation system has a process chamber having a process environment, and an ion implantation apparatus configured to implant ions into a workpiece supported by a chuck within the process chamber. A load lock chamber isolates the process (vacuum) environment from an atmospheric environment, wherein a load lock workpiece support supports the workpiece therein. An isolation chamber is coupled to the process chamber with a pre-implant cooling environment defined therein. An isolation gate valve selectively isolates the pre-implant cooling environment from the process environment wherein the isolation chamber comprises a pre-implant cooling workpiece support for supporting and cooling the workpiece. The isolation gate valve is the only access path for the workpiece to enter and exit the isolation chamber. A pressurized gas selectively pressurizes the pre-implant cooling environment to a pre-implant cooling pressure that is greater than the process pressure for expeditious cooling of the workpiece. A workpiece transfer arm transfer the workpiece between the load lock chamber, isolation chamber, and chuck. A controller controls the workpiece transfer arm selectively cools the workpiece to a pre-implant cooling temperature in the isolation chamber at the pre-implant cooling pressure via a control of the isolation gate valve, pre-implant cooling workpiece support, and pressurized gas source. | 2017-02-09 |
20170040142 | Range-Based Real-Time Scanning Electron Microscope Non-Visual Binner - A technique to identify non-visual defects, such as SEM non-visual defects (SNVs), includes generating an image of a layer of a wafer, evaluating at least one attribute of the image using a classifier, and identifying the non-visual defects on the layer of the wafer. A controller can be configured to identify the non-visual defects using the classifier. This controller can communicate with a defect review tool, such as a scanning electron microscope (SEM). | 2017-02-09 |
20170040143 | PLASMA PROCESSING APPARATUS - A plasma processing apparatus includes a processing chamber for processing a sample with a plasma, an RF power supply for generating the plasma within the processing chamber, an RF bias power supply for supplying RF bias power to a sample stage on which the sample is mounted, a pulse generation unit for creating first pulses for modulating the output from the RF power supply for generating the plasma and second pulses for modulating the output from the RF bias power supply, and a controller for providing control of the processing of the sample with the sample. The pulse generation unit creates the first pulses and the second pulses synchronized based on a pulse delay time transmitted from the controller. The pulse delay time is established to delay the second pulses relative to the first pulses. | 2017-02-09 |
20170040144 | RADIO FREQUENCY PLASMA METHOD FOR UNIFORM SURFACE PROCESSING OF RF CAVITIES AND OTHER THREE-DIMENSIONAL STRUCTURES - A method for efficient plasma etching of surfaces inside three-dimensional structures can include positioning an inner electrode within the chamber cavity; evacuating the chamber cavity; adding a first inert gas to the chamber cavity; regulating the pressure in the chamber; generating a plasma sheath along the inner wall of the chamber cavity; adjusting a positive D.C. bias on the inner electrode to establish an effective plasma sheath voltage; adding a first electronegative gas to the chamber cavity; optionally readjusting the positive D.C. bias on the inner electrode reestablish the effective plasma sheath voltage at the chamber cavity; etching the inner wall of the chamber cavity; and polishing the inner wall to a desired surface roughness. | 2017-02-09 |
20170040145 | A MICROWAVE PLASMA REACTOR FOR MANUFACTURING SYNTHETIC DIAMOND MATERIAL - A microwave plasma reactor for manufacturing synthetic diamond material via chemical vapour deposition, the microwave plasma reactor comprising: a plasma chamber defining a resonant cavity for supporting a primary microwave resonance mode having a primary microwave resonance mode frequency f; a plurality of microwave sources coupled to the plasma chamber for generating and feeding microwaves having a total microwave power Pτ into the plasma chamber; a gas flow system for feeding process gases into the plasma chamber and removing them therefrom; and a substrate holder disposed in the plasma chamber and comprising a supporting surface for supporting a substrate on which the synthetic diamond material is to be deposited in use, wherein the plurality of microwave sources are configured to couple at least 30% of the total microwave power Pτ into the plasma chamber in the primary microwave resonance mode frequency f, and wherein at least some of the plurality of microwave sources are solid state microwave sources. | 2017-02-09 |
20170040146 | PLASMA ETCHING DEVICE WITH PLASMA ETCH RESISTANT COATING - An apparatus for use in a plasma processing chamber is provided. The apparatus comprises part body and a coating with a thickness of no more than 30 microns consisting essentially of a Lanthanide series or Group III or Group IV element in an oxyfluoride covering a surface of the part body. | 2017-02-09 |
20170040147 | Systems Comprising Silicon Coated Gas Supply Conduits and Methods for Applying Coatings - In one embodiment, a plasma etching system may include a process gas source, a plasma processing chamber, and a gas supply conduit. A plasma can be formed from a process gas recipe in the plasma processing chamber. The gas supply conduit may include a corrosion resistant layered structure forming an inner recipe contacting surface and an outer environment contacting surface. The corrosion resistant layered structure may include a protective silicon layer, a passivated coupling layer and a stainless steel layer. The inner recipe contacting surface can be formed by the protective silicon layer. The passivated coupling layer can be disposed between the protective silicon layer and the stainless steel layer. The passivated coupling layer can include chrome oxide and iron oxide. The chrome oxide can be more abundant in the passivated coupling layer than the iron oxide. | 2017-02-09 |
20170040148 | HOLLOW RF FEED WITH COAXIAL DC POWER FEED - A feed tube for a substrate processing system includes an outer tube and a feed rod. The feed rod is arranged within the outer tube. The feed rod is arranged to provide radio frequency power to the substrate processing system and the outer tube provides a return for the radio frequency power. At least one conductor is routed within the feed rod. The conductor is arranged to provide electrical power to at least one component of the substrate processing system separate from the radio frequency power provided by the feed rod. | 2017-02-09 |
20170040149 | SELF CLEANING ION GENERATOR DEVICE - The present invention provides methods and systems for a self-cleaning ion generator that includes a self-cleaning ion generator device that includes a bottom portion, a top portion, and a sidewall, and at least one electrode extending from the top portion, and a cleaning apparatus for cleaning the at least one electrode. | 2017-02-09 |
20170040150 | ROLL-TO-ROLL HYBRID PLASMA MODULAR COATING SYSTEM - The present invention relates to a roll-to-roll hybrid plasma modular coating system, which comprises: at least one arc plasma processing unit, at least one magnetron sputtering plasma processing unit, a metallic film and at least one substrate feeding unit. Each of the arc plasma processing unit is formed with a first chamber and an arc plasma source. Each of the magnetron sputtering plasma processing unit is formed with a second chamber and at least one magnetron sputtering plasma source. The metallic film is disposed in the arc plasma processing unit to avoid chamber wall being deposited by the arc plasma source; There are at least one arc plasma processing unit, at least one magnetron sputtering plasma processing unit and at least one winding/unwinding unit connected in series to lay at least one thin layer by arc plasma deposition or by magnetron sputtering plasma onto substrate material. | 2017-02-09 |
20170040151 | GENERATOR OF TRANSIENT, HEAVY ELECTRONS AND APPLICATION TO TRANSMUTING RADIOACTIVE FISSION PRODUCTS - Use of adsorption, desorption, particle injection and other means to excite electrons to a region on their band structure diagram near an inflection point were the transient effective mass is elevated proportional to the inverse of curvature. These transient heavy electrons may then cause transmutations similar to transmutations catalyzed by the muons used by Alvarez at UC Berkeley during 1956 in liquid hydrogen. The heavy electrons may also control chemical reactions. | 2017-02-09 |
20170040152 | ION DETECTION - Mass analyzers and methods of ion detection for a mass analyzer are provided. An electrostatic field generator provides an electrostatic field causing ion packets to oscillate along a direction. A pulse transient signal is detected over a time duration that is significantly shorter than a period of the ion oscillation or using pulse detection electrodes having a width that is significantly smaller than a span of ion harmonic motion. A harmonic transient signal is also detected. Ion intensity with respect to mass-to-charge ratio is then identified based on the pulse transient signal and the harmonic transient signal. | 2017-02-09 |
20170040153 | Apparatus and a Method for Operating a Variable Pressure Sealed Beam Lamp - An apparatus and a method for operating a sealed high intensity illumination lamp configured to receive a laser beam from a laser light source. The lamp includes a sealed chamber configured to contain an ionizable medium having a plasma sustaining region, and a plasma ignition region. A high intensity light egress window emits high intensity light from the chamber. A substantially flat ingress window located within a wall of the chamber admits the laser beam into the chamber. The lamp includes means for controlled increasing and decreasing a pressure level within the sealed chamber while the lamp is producing the high intensity illumination. | 2017-02-09 |
20170040154 | SUBSTRATE PROCESSING APPARATUS AND SUBSTRATE PROCESSING METHOD - In order to remove from a substrate having a concavo-convex pattern formed on a surface of the substrate, a solid material with which a concave portion of the concavo-convex pattern is filled and which is formed by evaporating a solvent in a sublimable substance solution containing a sublimable substance that sublimates at a temperature equal to or higher than a first temperature, and an impurity that evaporates at a temperature equal to or higher than a second temperature that is higher than the first temperature, the prevent invention provides a substrate processing apparatus and a substrate processing method which heat the substrate to a temperature equal to or higher than the second temperature. | 2017-02-09 |
20170040155 | Removal of Particles on Back Side of Wafer - The present disclosure provides a method of cleaning a semiconductor wafer during a process of fabricating a semiconductor device. The method includes loading a semiconductor wafer into a wafer handling system. The method includes removing contaminant particles from an edge region of the wafer from the back side, wherein alignment marks are located in the edge region. The method includes collecting the removed contaminant particles and discarding the collected contaminant particles out of the wafer handling system. The disclosure also provides an apparatus for fabricating a semiconductor device. The apparatus includes a wafer cleaning device that is operable to clean a predetermined region of the wafer on the back surface thereof. The predetermined region of the wafer at least partially overlaps with one or more alignment marks. | 2017-02-09 |
20170040156 | PVDF-TrFE Co-Polymer Having Improved Ferroelectric Properties, Methods of Making a PVDF-TrFE Co-Polymer Having Improved Ferroelectric Properties and Methods of Changing the End Group of a PVDF-TrFE Co-Polymer - A method of exchanging or transforming end groups in and/or improving the ferroelectric properties of a PVDF-TrFE co-polymer is disclosed. A bulky or chemically dissimilar end group, such as an iodine, sulfate, aldehyde or carboxylic acid end group, may be transformed to a hydrogen, fluorine or chlorine atom. A method of making a PVDF-TrFE co-polymer is disclosed, including polymerizing a mixture of VDF and TrFE using an initiator, and transforming a bulky or chemically dissimilar end group to a hydrogen, fluorine or chlorine atom. A PVDF-TrFE co-polymer or other fluorinated alkene polymer is also disclosed. The co-polymer may be used as a ferroelectric, electromechanical, piezoelectric or dielectric material in an electronic device. | 2017-02-09 |
20170040157 | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, SUBSTRATE PROCESSING APPARATUS, AND RECORDING MEDIUM - A method of manufacturing a semiconductor device includes a process of forming a film on a substrate by performing a cycle a predetermined number of times. The cycle includes: supplying a precursor containing a predetermined element to the substrate; supplying a first reactant containing nitrogen and carbon to the substrate; supplying a second reactant containing nitrogen to the substrate; and supplying a third reactant containing oxygen to the substrate, wherein in the cycle, a supply amount of the second reactant is set to be smaller than a supply amount of the first reactant. | 2017-02-09 |
20170040158 | LOW TEMPERATURE ALD ON SEMICONDUCTOR AND METALLIC SURFACES - The present disclosure provides for semiconductor fabrication processes that include atomic layer depositions. Embodiments described herein provide for formation of a diffusion barrier or gate dielectric layer in preparation for subsequent ALD on semiconductor surfaces. More specifically, embodiments of the present disclosure provide for the formation of fin field effect transistor (FinFET) and metal oxide semiconductor field effect transistor (MOSFET) devices utilizing improved ALD processes. | 2017-02-09 |
20170040159 | SELF-LIMITING AND SATURATING CHEMICAL VAPOR DEPOSITION OF A SILICON BILAYER AND ALD - Embodiments described herein provide a self-limiting and saturating Si—O | 2017-02-09 |
20170040160 | DESIGN OF DISK/PAD CLEAN WITH WAFER AND WAFER EDGE/BEVEL CLEAN MODULE FOR CHEMICAL MECHANICAL POLISHING - A method and apparatus for cleaning a substrate after chemical mechanical planarizing (CMP) is provided. The apparatus comprises a housing, a substrate holder rotatable on a first axis and configured to retain a substrate in a substantially vertical orientation, a first pad holder having a pad retaining surface facing the substrate holder in a parallel and space apart relation, the first pad holder rotatable on a second axis rotatable parallel to the first axis, a first actuator operable to move the pad holder relative to the substrate holder to change a distance defined between the first axis and the second axis, and a second pad holder disposed in the housing, the second pad holder having a pad retaining surface facing the substrate holder in a parallel and spaced apart relation, wherein the second pad holder is couple with a rotary arm. | 2017-02-09 |
20170040161 | IMPRINTING TEMPLATE SUBSTRATE, METHOD FOR MANUFACTURING THE SAME, IMPRINTING TEMPLATE SUBSTRATE MANUFACTURING APPARATUS, AND METHOD FOR MANUFACTURING SEMICONDUCTOR APPARATUS - An imprinting template substrate has a protruded portion, and a protective layer on a side surface of the protruded portion, and having a contact angle higher with respect to a resist material than a contact angle of the protruded portion with respect to the resist material. Even when the template is pressed to the resist, the resist hardly adheres to the side surface of the template. An imprinting process using the present template forms a pattern on a semiconductor substrate and then a semiconductor apparatus is manufactured. | 2017-02-09 |
20170040162 | Method of Patterning Without Dummy Gates - Techniques herein provide precise cuts for fins and nanowires without needing dummy gate pairs to compensate for overlay misalignment. Techniques herein include using an etch mask to remove designated portions of gate structures to define a trench or open space having fin structures, nanowires, etc. The uncovered fin structures are etched away or otherwise removed from the trench segments. The etch mask and material defining the trench provide a combined etch mask for removing uncovered fin portions. Subsequently the trench segments are filled with dielectric material. Without needed dummy gate pairs a given substrate can fit significantly more electrical devices per unit area. | 2017-02-09 |
20170040163 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - A photoresist is exposed to light under a condition that sensitivity of a second portion of the photoresist on a recessed portion of a base layer is higher than sensitivity of a first portion of the photoresist on a projecting portion of the base layer. | 2017-02-09 |
20170040164 | SELECTIVE DEPOSITION OF ALUMINUM AND NITROGEN CONTAINING MATERIAL - Methods are provided for selectively depositing Al and N containing material on a first conductive surface of a substrate relative to a second, dielectric surface of the same substrate. In some aspects, methods of forming an Al and N containing protective layer or etch stop layer for use in integrated circuit fabrication are provided. | 2017-02-09 |
20170040165 | METHOD FOR PRODUCING A LAYER STRUCTURE AS A BUFFER LAYER OF A SEMICONDUCTOR COMPONENT AND LAYER STRUCTURE AS A BUFFER LAYER OF A SEMICONDUCTOR COMPONENT - What is specified is a method for producing a layer structure ( | 2017-02-09 |
20170040166 | MANUFACTURING METHOD AND APPARATUS FOR MANUFACTURING SILICON CARBIDE EPITAXIAL WAFER - A manufacturing method for manufacturing a silicon carbide epitaxial wafer includes: introducing a cleaning gas into a growth furnace to remove dendrite-like polycrystal of silicon carbide attached to an inner wall of the growth furnace; after introducing the cleaning gas, bringing a silicon carbide substrate in the growth furnace; and growing a silicon carbide epitaxial layer on the silicon carbide substrate by introducing a processing gas into the growth furnace to manufacture a silicon carbide epitaxial wafer, wherein the cleaning gas having fluid energy of 1.6E−4 [J] or higher is introduced into the growth furnace. | 2017-02-09 |
20170040167 | Laser Assisted SiC Growth On Silicon - A method for forming a compound on a substrate is provided. The method includes depositing a composition onto a surface of a substrate; illuminating the composition and the substrate with pulsed energy; melting the substrate and decomposing the composition simultaneously; and forming a compound on the substrate. A first component of the compound is derived from the substrate and a second component of the compound is derived from the composition. | 2017-02-09 |
20170040168 | Methods and Mask Structures for Substantially Defect-Free Epitaxial Growth - Disclosed are methods and mask structures for epitaxially growing substantially defect-free semiconductor material. In some embodiments, mask structure includes a first level defining a first trench extending through the first level, wherein a bottom of the first trench is defined by a semiconductor substrate, and a second level on top of the first level, wherein the second level defines a plurality of second trenches positioned at a non-zero angle with respect to the first trench. | 2017-02-09 |
20170040169 | MATERIAL SELECTIVE REGROWTH STRUCTURE AND METHOD - The disclosure relates to a method for creating a nanoscale structure. The method includes forming a window in a semiconductor structure, the semiconductor structure comprising a substrate, a first semiconductor layer, and a mask layer; depositing a second semiconductor layer within the window such that a gap remains between the second semiconductor and a portion of the window; and regrowing the first semiconductor layer such that the first semiconductor layer fills the gap. | 2017-02-09 |
20170040170 | Systems and Methods for Separately Applying Charged Plasma Constituents and Ultraviolet Light in a Mixed Mode Processing Operation - A processing volume is formed within an interior of a chamber between a top surface of a substrate support and a top dielectric window. An upper portion of the processing volume is a plasma generation volume. A lower portion of the processing volume is a reaction volume. A coil antennae is disposed above the dielectric window and connected to receive RF power. A process gas input is positioned to supply a process gas to the plasma generation volume. A series of magnets is disposed around a radial periphery of the chamber at a location below the top dielectric window. The series of magnets is configured to generate magnetic fields that extend across the processing volume. The series of magnets is positioned relative to the plasma generation volume such that at least a portion of the magnetic fields generated by the series of magnets is located below the plasma generation volume. | 2017-02-09 |
20170040171 | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE - An n-type layer ( | 2017-02-09 |
20170040172 | METHODS OF FORMING MATERIAL LAYER - A method of forming a material layer includes providing a substrate into a reaction chamber, providing a source material onto a substrate, the source material being a precursor of a metal or semimetal having a ligand, providing an ether-based modifier on the substrate, purging an inside of the reaction chamber, and reacting a reaction material with the source material to form the material layer. | 2017-02-09 |
20170040173 | Metal Gate Structure - A method comprises depositing a dielectric layer on sidewalls and a bottom of a trench of a gate structure, depositing a metal layer on the dielectric layer, depositing a protection layer on the metal layer, wherein an upper portion of a sidewall portion of the protection layer is thinner than a lower portion of the sidewall portion of the protection layer and etching back the metal wherein an upper portion of a first metal sidewall of the metal layer is thinner than a lower portion of the first metal sidewall and an upper portion of a second metal sidewall of the metal layer is thinner than a lower portion of the second metal sidewall. | 2017-02-09 |
20170040174 | Systems And Methods For Reverse Pulsing - Systems and methods for reverse pulsing are described. One of the methods includes receiving a digital signal having a first state and a second state. The method further includes generating a transformer coupled plasma (TCP) radio frequency (RF) pulsed signal having a high state when the digital signal is in the first state and having a low state when the digital signal is in the second state. The method includes providing the TCP RF pulsed signal to one or more coils of a plasma chamber, generating a bias RF pulsed signal having a low state when the digital signal is in the first state and having a high state when the digital signal is in the second state, and providing the bias RF pulsed signal to a chuck of the plasma chamber. | 2017-02-09 |
20170040175 | OXIDE ETCH SELECTIVITY SYSTEMS AND METHODS - Embodiments of the present technology may include a method of etching a substrate. The method may include striking a plasma discharge in a plasma region. The method may also include flowing a fluorine-containing precursor into the plasma region to form a plasma effluent. The plasma effluent may flow into a mixing region. The method may further include introducing a hydrogen-and-oxygen-containing compound into the mixing region without first passing the hydrogen-and-oxygen-containing compound into the plasma region. Additionally, the method may include reacting the hydrogen-and-oxygen-containing compound with the plasma effluent in the mixing region to form reaction products. The reaction products may flow through a plurality of openings in a partition to a substrate processing region. The method may also include etching the substrate with the reaction products in the substrate processing region. | 2017-02-09 |
20170040176 | SYSTEMS AND METHODS FOR REVERSE PULSING - Systems and methods for reverse pulsing are described. One of the methods includes receiving a digital signal having a first state and a second state. The method further includes generating a transformer coupled plasma (TCP) radio frequency (RF) pulsed signal having a high state when the digital signal is in the first state and having a low state when the digital signal is in the second state. The method includes providing the TCP RF pulsed signal to one or more coils of a plasma chamber, generating a bias RF pulsed signal having a low state when the digital signal is in the first state and having a high state when the digital signal is in the second state, and providing the bias RF pulsed signal to a chuck of the plasma chamber. | 2017-02-09 |
20170040177 | SUBSTRATE PROCESSING APPARATUS, SUBSTRATE PROCESSING METHOD AND SUBSTRATE PROCESSING PROGRAM - A substrate processing apparatus is provided that includes a control part configured to control a substrate process in accordance with a processing procedure set in a process recipe. The process recipe is linked to a plurality of partial recipes obtained by dividing the processing procedure into functions. The control part controls the substrate process in accordance with processing procedures set in the linked plurality of partial recipes. | 2017-02-09 |
20170040178 | HARDMASK COMPOSITION AND METHOD OF FORMING PATTERN BY USING THE HARDMASK COMPOSITION - A hardmask composition may include a solvent and a 2-dimensional carbon nanostructure containing about 0.01 atom % to about 40 atom % of oxygen or a 2-dimensional carbon nanostructure precursor thereof. A content of oxygen in the 2-dimensional carbon nanostructure precursor may be lower than about 0.01 atom % or greater than about 40 atom %. The hardmask composition may be used to form a fine pattern. | 2017-02-09 |
20170040179 | METHOD FOR FABRICATING SEMICONDUCTOR DEVICE - A method for fabricating semiconductor device is disclosed. The method includes the steps of: providing a substrate having a gate structure thereon, a first hard mask atop the gate structure, and an interlayer dielectric (ILD) layer around the gate structure and the first hard mask; removing part of the first hard mask; forming a second hard mask layer on the first hard mask and the ILD layer; and planarizing part of the second hard mask layer to form a second hard mask on the first hard mask. | 2017-02-09 |
20170040180 | GAS-PHASE SILICON OXIDE SELECTIVE ETCH - A method of etching silicon oxide on patterned heterogeneous structures is described and includes a gas phase etch using anhydrous vapor-phase HF. The HF is combined with an additional precursor in the substrate processing region. The HF may enter through one channel(s) and the additional precursor may flow through another channel(s) prior to forming the combination. The combination may be formed near the substrate. The silicon oxide etch selectivity relative to silicon nitride from is selectable from about one to several hundred. In all cases, the etch rate of exposed silicon, if present, is negligible. No precursors are excited in any plasma either outside or inside the substrate processing region according to embodiments. The additional precursor may be a nitrogen-and-hydrogen-containing precursor such as ammonia. | 2017-02-09 |
20170040181 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF - An object of the present invention to provide a highly reliable semiconductor device. Another object is to provide a manufacturing method of a highly reliable semiconductor device. Still another object is to provide a semiconductor device having low power consumption. Yet another object is to provide a manufacturing method of a semiconductor device having low power consumption. Furthermore, another object is to provide a semiconductor device which can be manufactured with high mass productivity. Another object is to provide a manufacturing method of a semiconductor device which can be manufactured with high mass productivity. An impurity remaining in an oxide semiconductor layer is removed so that the oxide semiconductor layer is purified to have an extremely high purity. Specifically, after adding a halogen element into the oxide semiconductor layer, heat treatment is performed to remove an impurity from the oxide semiconductor layer. The halogen element is preferably fluorine. | 2017-02-09 |
20170040182 | POWER AMPLIFIER MODULE PACKAGE AND PACKAGING METHOD THEREOF - Disclosed is a method of packaging a power amplifier module. The method of packaging a power amplifier module includes providing a unified pattern including a ceramic layer and a pattern formed on the ceramic layer, bonding the unified pattern on a metal layer, and depositing a ceramic sidewall, on which at least one external signal connection lead line is formed, on the unified pattern bonded the metal layer. | 2017-02-09 |
20170040183 | LEAD FRAME AND SEMICONDUCTOR DEVICE - A lead frame includes a dam bar and leads connected by the dam bar. Each lead includes an inner lead, which is located at one side of the dam bar, and an outer lead, which is located at the other side of the dam bar and formed integrally with the inner lead. Each inner lead includes a basal portion located at a side closer to the dam bar, a distal portion located at the opposite side of the basal portion, and an intermediate portion connecting the distal and basal portions and having a width that differs from the distal portion. A plating layer covers an upper surface and a side surface of the distal portion and at least part of a side surface of the intermediate portion. Side surfaces of the basal portion and the dam bar are entirely located outside the plating layer. | 2017-02-09 |
20170040184 | MOUNTING STRUCTURE AND METHOD FOR PRODUCING MOUNTING STRUCTURE - A mounting structure, including: a first component that has a first bump; a second component that has a second bump; a mounting component that has a primary mounting surface and a secondary mounting surface; a first solder that connects an electrode on the primary mounting surface and the first bump; a second solder that connects an electrode on the secondary mounting surface and the second bump; and a reinforcing resin that covers a part of the first solder and that is not in contact with the primary mounting surface. | 2017-02-09 |
20170040185 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF - A semiconductor device includes a semiconductor element, a substrate formed with a recess in a main surface, a conductive layer formed on the substrate and electrically connected to the semiconductor element, and a sealing resin covering the semiconductor element. The substrate is made of an electrically insulative synthetic resin. The recess has a bottom surface on which the semiconductor element is mounted, and an intermediate surface connected to the main surface and the bottom surface. The bottom surface is orthogonal to the thickness direction of the substrate. The intermediate surface is inclined with respect to the bottom surface. | 2017-02-09 |
20170040186 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME - Provided is a method of manufacturing a semiconductor device with sufficient heat dissipation property, in which a mold configured to mold an island for mounting a semiconductor chip thereon includes an inner punch ( | 2017-02-09 |
20170040187 | SEALING SHEET PROVIDED WITH DOUBLE-SIDED SEPARATOR, AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE - A sealing sheet with a double-sided separator, provided with a sealing sheet, a separator (A) laminated on one side of the sealing sheet, and a separator (B) laminated on the other side of the sealing sheet, the separation force F | 2017-02-09 |
20170040188 | SUBSTRATE PROCESSING APPARATUS - In a state of a substrate processing apparatus, a chamber lid and a cup are located at a first position, a cup side wall and a liquid receiving side wall overlap each other in a radial direction, and a guard is supported by a liquid receiving side wall. When the chamber lid and the cup move to a second position that is above the first position, the guard moves upward while being suspended from the cup side wall. When the chamber lid and the cup are located at the second position, the lower end of the cup side wall is located above the upper end of the liquid receiving side wall, and the guard covers a gap between the lower end of the cup side wall and the upper end of the liquid receiving side wall. | 2017-02-09 |
20170040189 | SEMICONDUCTOR MANUFACTURING APPARATUS AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE - In one embodiment, a semiconductor manufacturing apparatus includes a wafer retaining module configured to retain a wafer by a chuck pin and to rotate the wafer. The apparatus further includes a wafer cleaning module configured to retain a cleaning member for cleaning a surface of the wafer and to rotate the cleaning member around a first rotation axis that is perpendicular to the surface of the wafer, the wafer cleaning module cleaning the surface of the wafer by moving the cleaning member on the surface of the wafer while the cleaning member contacts the wafer and rotates. The wafer cleaning module retains and rotates the cleaning member so that the first rotation axis does not pass through a contact region of the cleaning member with respect to the wafer. | 2017-02-09 |
20170040190 | THERMAL MANAGEMENT SYSTEMS AND METHODS FOR WAFER PROCESSING SYSTEMS - A workpiece holder includes a puck having a cylindrical axis, a radius about the cylindrical axis, and a thickness. At least a top surface of the puck is substantially planar, and the puck defines one or more thermal breaks. Each thermal break is a radial recess that intersects at least one of the top surface and a bottom surface of the cylindrical puck. The radial recess has a thermal break depth that extends through at least half of the puck thickness, and a thermal break radius that is at least one-half of the puck radius. A method of processing a wafer includes processing the wafer with a first process that provides a first center-to-edge process variation, and subsequently, processing the wafer with a second process that provides a second center-to-edge process variation that substantially compensates for the first center-to-edge process variation. | 2017-02-09 |
20170040191 | BOLTED WAFER CHUCK THERMAL MANAGEMENT SYSTEMS AND METHODS FOR WAFER PROCESSING SYSTEMS - A workpiece holder includes a puck, first and second heating devices in thermal communication with respective inner and outer portions of the puck, and a thermal sink in thermal communication with the puck. The first and second heating devices are independently controllable, and the first and second heating devices are in greater thermal communication with the puck, than thermal communication of the thermal sink with the puck. A method of controlling temperature distribution of a workpiece includes flowing a heat exchange fluid through a thermal sink to establish a reference temperature to a puck, raising temperatures of radially inner and outer portions of the puck to first and second temperatures greater than the reference temperature, by activating respective first and second heating devices disposed in thermal communication with the radially inner and outer portions of the puck, and placing the workpiece on the puck. | 2017-02-09 |
20170040192 | THIN HEATED SUBSTRATE SUPPORT - Embodiments of the present invention provide an apparatus heating and supporting a substrate in a processing chamber. One embodiment of the present invention provides a substrate support assembly. The substrate support assembly includes a heated plate having a substrate supporting surface on a front side and a cantilever arm extending from a backside of the heated plate. The heated plate is configured to support and heat a substrate on the substrate supporting surface. The cantilever arm has a first end attached to the heated plate near a central axis of the heated plate, and a second end extending radially outwards from the central axis. | 2017-02-09 |
20170040193 | FLOW PATH MEMBER - There is provided a first substrate having a first main surface, a second substrate having a second main surface, a bonding member bonding the first main surface and the second main surface, and a flow path positioned between the first substrate and the second substrate and extended in a parallel direction with the first main surface and the second main surface, and the bonding member has a projection which is protruded from a portion between the first main surface and the second main surface toward an inner part of the flow path, the flow path includes a first portion having the projection provided in an inner part and a second portion linked to the first portion adjacently to an opposite side to a side where the projection of the first portion is provided, and a height of the first substrate is greater than a height of the second portion in the thickness direction. | 2017-02-09 |
20170040194 | PROCESS SHEET RESISTANCE UNIFORMITY IMPROVEMENT USING MULTIPLE MELT LASER EXPOSURES - Embodiments described herein relate to apparatus and methods of thermal processing. More specifically, apparatus and methods described herein relate to laser thermal treatment of semiconductor substrates by increasing the uniformity of energy distribution in an image at a surface of a substrate. | 2017-02-09 |