08th week of 2015 patent applcation highlights part 13 |
Patent application number | Title | Published |
20150048289 | VEHICLE COVERING APPARATUS - An apparatus for raising and lowering a vehicle cover is provided. The apparatus includes a flexible member having a first end and a second end, the flexible member configured to flex so that, with the first end positioned adjacent to a vehicle and the second and positioned generally higher than the vehicle, the second end raises the vehicle cover up from the vehicle and lowers the vehicle cover down towards the vehicle. The second end of the flexible member is configured to retain the vehicle cover. | 2015-02-19 |
20150048290 | UNIQUE FENCE CLIPPING SYSTEM HAVING FLEXIBLE ARM AND DOUBLE-LOCKING-HEAD ARM FOR HANGING FENCE PANELS ON ONE SIDE OF FENCE POSTS - A unique plasticized fence clipping system comprises fence posts, fence rails, wire panels, plasticized rail clips, and plasticized double-locking-head arms. The plasticized rail clips have wire recesses. The wire panels have top wires. The wire recesses are for locking the top wires therein. The plasticized rail clips and plasticized double-locking-head arms are for quickly and easily locking and releasing the top wires of the wire panels to and from the inside of the fence rails, respectively, such that the unique plasticized fence clipping system absorbs vibrations exerted on the fence and prevents the metal components of the fence from contacting and grinding against one another, and from squeaking and moaning, to keep the fence quiet and to prevent the metal components from rusting. The unique plasticized fence clipping system is also affordable and reliable, is quick and easy to install, requires no tools, saves materials, eliminates personal injuries, can be operated by hand, and requires only one person to install the fence. | 2015-02-19 |
20150048291 | PHASE CHANGE MEMORY CELL WITH IMPROVED PHASE CHANGE MATERIAL - A phase change memory cell. The phase change memory cell includes a substrate and a phase change material. The phase change material is deposited on the substrate for performing a phase change function in the phase change memory cell. The phase change material is an alloy having a mass density change of less than three percent during a transition between an amorphous phase and a crystalline phase. | 2015-02-19 |
20150048292 | SEMICONDUCTOR DEVICE HAVING VERTICAL CHANNEL, RESISTIVE MEMORY DEVICE INCLUDING THE SAME, AND METHOD OF MANUFACTURING THE SAME - A semiconductor device, a resistive memory device including the same, and a method of manufacturing the same are provided. The semiconductor device includes a pillar extending substantially perpendicular from a semiconductor substrate, the pillar including an inner portion and an outer portion surrounding the inner portion. A junction region is formed in an upper region and a lower region of the vertical pillar, and a gate surrounds the pillar. The inner portion of the pillar includes a semiconductor layer having a lattice constant that is larger than a lattice constant of the outer portion of the pillar. | 2015-02-19 |
20150048293 | THREE-DIMENSIONAL SEMICONDUCTOR DEVICE, VARIABLE RESISTIVE MEMORY DEVICE INCLUDING THE SAME, AND METHOD OF MANUFACTURING THE SAME - A three-dimensional semiconductor device, a resistive variable memory device including the same, and a method of manufacturing the same are provided. The 3D semiconductor device includes a source formed of a first semiconductor material, a channel layer formed on the source and formed of the first semiconductor material, a lightly doped drain (LDD) region formed on the channel layer and formed of a second semiconductor material having a higher oxidation rate than that of the first semiconductor material, a drain formed on the LDD region and formed of the first semiconductor material, and a gate insulating layer formed on outer circumferences of the channel layer, the LDD region, and the drain. | 2015-02-19 |
20150048294 | VARIABLE RESISTIVE MEMORY DEVICE INCLUDING VERTICAL CHANNEL PMOS TRANSISTOR AND METHOD OF MANUFACTURING THE SAME - A semiconductor device having a vertical channel, a variable resistive memory device including the same, and a method of manufacturing the same are provided. The semiconductor device having a vertical channel includes a vertical pillar formed on a semiconductor substrate and including an inner portion and an outer portion surrounding the inner portion, junction regions formed in the outer portion of the vertical pillar, and a gate formed to surround the vertical pillar. The inner portion of the vertical pillar has a lattice constant smaller than that of the outer portion of the vertical pillar. | 2015-02-19 |
20150048295 | SEMICONDUCTOR DEVICE HAVING FIN GATE, RESISTIVE MEMORY DEVICE INCLUDING THE SAME, AND METHOD OF MANUFACTURING THE SAME - A semiconductor device having a fin gate that improves an operation current, and a method of manufacturing the same are provided. The semiconductor device includes an active pillar formed on a semiconductor substrate, and including a first region and a second region surrounding at least one surface of the first region, and a fin gate extending to overlap an upper surface and a lateral surface of the active pillar. The first region of the active pillar is formed of a semiconductor layer having a lattice constant smaller than that of the second region of the active pillar. | 2015-02-19 |
20150048296 | SEMICONDUCTOR DEVICE HAVING FIN GATE, RESISTIVE MEMORY DEVICE INCLUDING THE SAME, AND METHOD OF MANUFACTURING THE SAME - A semiconductor device having a fin gate that improves an operation current, and a method of manufacturing the same. The semiconductor device includes an active pillar formed on a semiconductor substrate, the active pillar including an inner region and an outer region surrounding the inner region, and a fin gate overlapping an upper surface and a lateral surface of the active pillar. The inner portion of the active pillar includes a first semiconductor layer having a first lattice constant, and the outer region of the active pillar includes a second semiconductor layer having a second lattice constant smaller than the first lattice constant. | 2015-02-19 |
20150048297 | MEMORY CELL HAVING RESISTANCE VARIABLE FILM AND METHOD OF MAKING THE SAME - A manufacture includes a first electrode having an upper surface, a second electrode having a lower surface directly over the upper surface of the first electrode, a resistance variable film between the first electrode and the second electrode, and a first conductive member on and surrounding an upper portion of the second electrode. | 2015-02-19 |
20150048298 | MEMORY CELL HAVING RESISTANCE VARIABLE FILM AND METHOD OF MAKING THE SAME - A manufacture includes a first electrode having an upper surface and a side surface, a resistance variable film over the first electrode, and a second electrode over the resistance variable film. The resistance variable film extends along the upper surface and the side surface of the first electrode. The second electrode has a side surface. A portion of the side surface of the first electrode and a portion of the side surface of the second electrode sandwich a portion of the resistance variable film. | 2015-02-19 |
20150048299 | TWO TERMINAL SWITCHING DEVICE HAVING BIPOLAR SWITCHING PROPERTY, METHOD OF FABRICATING THE SAME, AND RESISTIVE MEMORY CROSS-POINT ARRAY HAVING THE SAME - Provided are a two-terminal switching device having a bidirectional switching property, and a resistive memory cross-point array including the same. The two-terminal switching device includes a first electrode. A first tunneling barrier layer is disposed on the first electrode. An oxide semiconductor layer is disposed on the first tunneling barrier layer. A second tunneling barrier layer is disposed on the oxide semiconductor layer. A second electrode is disposed on the second tunneling barrier layer. | 2015-02-19 |
20150048300 | MATERIALS, FABRICATION EQUIPMENT, AND METHODS FOR STABLE, SENSITIVE PHOTODETECTORS AND IMAGE SENSORS MADE THEREFROM - Optically sensitive devices include a device comprising a first contact and a second contact, each having a work function, and an optically sensitive material between the first contact and the second contact. The optically sensitive material comprises a p-type semiconductor, and the optically sensitive material has a work function. Circuitry applies a bias voltage between the first contact and the second contact. The optically sensitive material has an electron lifetime that is greater than the electron transit time from the first contact to the second contact when the bias is applied between the first contact and the second contact. The first contact provides injection of electrons and blocking the extraction of holes. The interface between the first contact and the optically sensitive material provides a surface recombination velocity less than 1 cm/s. | 2015-02-19 |
20150048301 | ENGINEERED SUBSTRATES HAVING MECHANICALLY WEAK STRUCTURES AND ASSOCIATED SYSTEMS AND METHODS - Engineered substrates having mechanically weak structures for separating substrates from epitaxially grown semiconductor structures and associated systems and methods are disclosed herein. In several embodiments, for example, an engineered substrate can be manufactured by forming an intermediary material at an upper surface of a structural material and forming a plurality of pores in the intermediary material. The porous intermediary material and the structural material can define a handle substrate. The method can further include bonding an epitaxial formation structure on the handle substrate such that the porous intermediary material is between the epitaxial formation structure and the structural material. In various embodiments, the porous intermediary material is configured to break under mechanical stress. | 2015-02-19 |
20150048302 | LIGHT EMITTING DIODE HAVING CARBON NANOTUBES THEREIN AND METHOD FOR MANUFACTURING THE SAME - A light emitting diode includes a substrate, an un-doped GaN layer, a plurality of carbon nanotubes, an N-type GaN layer, an active layer formed on the N-type GaN layer, and a P-type GaN layer formed on the active layer. The substrate includes a first surface and a second surface opposite and parallel to the first surface. A plurality of convexes is formed on the first surface of the substrate. The un-doped GaN layer is formed on the first surface of the substrate. The plurality of carbon nanotubes is formed on an upper surface of the un-doped GaN layer. The plurality of carbon nanotubes is spaced from each other to expose a portion of the upper surface of the un-doped GaN layer. The N-type GaN layer is formed on the exposed portion of the upper surface of the un-doped GaN layer and covering the carbon nanotubes therein. | 2015-02-19 |
20150048303 | LIGHT-EMITTING DIODE AND METHOD FOR MANUFACTURING THEREOF - The disclosure provides a light-emitting diode (LED) and a method for manufacturing the same. The LED includes a first semiconductor layer, a light-emitting layer, a second semiconductor layer, a first current spreading layer, a current blocking having a plurality of nitrogen vacancies, and a second current spreading layer, wherein the second spreading layer includes a current spreading area and a current blocking area. The current blocking area is formed the nitrogen vacancies by high power sputtering on the current blocking area of the second semiconductor layer, so as to increase the resistance of the current blocking area and occur the efficiency of current blocking. | 2015-02-19 |
20150048304 | NITRIDE SEMICONDUCTOR ELEMENT AND METHOD FOR PRODUCING SAME - A nitride semiconductor element | 2015-02-19 |
20150048305 | LED DIE AND METHOD OF MANUFACTURING THE SAME - An LED die includes a substrate, a light emitting structure, electrodes, a first transparent protecting layer, a reflection layer, and a second transparent protecting layer. The light emitting structure includes a first semiconductor layer, an active layer, a second semiconductor layer successively formed on the substrate. A part of first semiconductor layer being exposed. A first electrode is formed the first semiconductor layer. A second electrode is formed on the second semiconductor layer. The first transparent protecting layer, the reflection layer, and the second transparent protecting layer successively formed on the first electrode. The present disclosure also provides a method of manufacturing the LED die. | 2015-02-19 |
20150048306 | Gd Doped AlGaN Ultraviolet Light Emitting Diode - A diode comprises nanowires compositionally graded along their lengths with an active region doped with gadolinium sandwiched between first and second compositionally graded Al | 2015-02-19 |
20150048307 | VERTICAL STRUCTURE LEDS - A vertical structure light-emitting device includes a conductive support, a light-emitting semiconductor structure disposed on the conductive support structure, the semiconductor structure having a first semiconductor surface, a side semiconductor surface and a second semiconductor surface, a first electrode electrically connected to the first-type semiconductor layer, a second electrode electrically connected to the second-type semiconductor layer, wherein the second electrode has a first electrode surface, a side electrode surface and a second electrode surface, wherein the first electrode surface, relative to the second electrode surface, is proximate to the semiconductor structure; and wherein the second electrode surface is opposite to the first electrode surface, and a passivation layer disposed on the side semiconductor surface and the second semiconductor surface. | 2015-02-19 |
20150048308 | LIGHT EMITTING DEVICE, LIGHT EMITTING DEVICE PACKAGE COMPRISING THE SAME AND LIGHTING SYSTEM - A light emitting device including a support substrate, an adhesive layer on the support substrate, a conductive layer on the adhesive layer, a light emitting structure on the conductive layer, the light emitting structure including a first semiconductor layer containing AlGaN, an active layer, and a second semiconductor layer containing AlGaN, a first electrode on the light emitting structure, a metal layer disposed under the conductive layer and at an adjacent region of the conductive layer, and a passivation layer disposed on a side surface of the light emitting structure, wherein the first electrode is vertically non-overlapped with the conductive layer, wherein the conductive layer includes a first layer and a second layer on the first layer, wherein the second layer directly contacts with the light emitting structure, wherein the metal layer directly contacts with the light emitting structure, wherein the metal layer is expanded to an outer area of the light emitting structure, and wherein the passivation layer is disposed on the metal layer at the outer surface of the light emitting structure. | 2015-02-19 |
20150048309 | Device with Transparent and Higher Conductive Regions in Lateral Cross Section of Semiconductor Layer - A device including one or more layers with lateral regions configured to facilitate the transmission of radiation through the layer and lateral regions configured to facilitate current flow through the layer is provided. The layer can comprise a short period superlattice, which includes barriers alternating with wells. In this case, the barriers can include both transparent regions, which are configured to reduce an amount of radiation that is absorbed in the layer, and higher conductive regions, which are configured to keep the voltage drop across the layer within a desired range. | 2015-02-19 |
20150048310 | SYSTEM AND METHOD FOR PROVIDING AN ELECTRON BLOCKING LAYER WITH DOPING CONTROL - Aspects of the disclosure pertain to a system and method for providing an electron blocking layer with doping control. The electron blocking layer is included in a semiconductor assembly. The electron blocking layer includes a lithium aluminate layer. The lithium aluminate layer promotes reduced diffusion of magnesium into a layer stack of the semiconductor assembly. | 2015-02-19 |
20150048311 | Semiconductor Nanoparticle-Based Materials - The present invention relates to a primary particle comprised of a primary matrix material containing a population of semiconductor nanoparticles, wherein each primary particle further comprises an additive to enhance the physical, chemical and/or photo-stability of the semiconductor nanoparticles. A method of preparing such particles is described. Composite materials and light emitting devices incorporating such primary particles are also described. | 2015-02-19 |
20150048312 | SOLUTION-ASSISTED CARBON NANOTUBE PLACEMENT WITH GRAPHENE ELECTRODES - A semiconductor device includes a substrate having at least one electrically insulating portion. A first graphene electrode is formed on a surface of the substrate such that the electrically insulating portion is interposed between a bulk portion of the substrate and the first graphene electrode. A second graphene electrode formed on the surface of the substrate. The electrically insulating portion of the substrate is interposed between the bulk portion of the substrate and the second graphene electrode. The second graphene electrode is disposed opposite the first graphene electrode to define an exposed substrate area therebetween. | 2015-02-19 |
20150048313 | STRIP-SHAPED GATE TUNNELING FIELD EFFECT TRANSISTOR WITH DOUBLE-DIFFUSION AND A PREPARATION METHOD THEREOF - The present invention discloses a strip-shaped gate-modulated tunneling field effect transistor with double-diffusion and a preparation method thereof, belonging to a field of CMOS field effect transistor logic device and the circuit. The tunneling field effect transistor includes a semiconductor substrate, a highly-doped source region, a highly-doped drain region, a double-diffusion source region, a gate dielectric layer, and a control gate, wherein the control gate has a strip-shaped structure with a gate length greater than a gate width, and at one side thereof is connected to the highly-doped drain region and at the other side thereof extends laterally into the highly-doped source region; a region located below the control gate is a channel region; the gate width of the control gate is less than twice width of a source depletion layer; the double-diffusion region has the same doping region as the highly-doped source region and the double-diffusion region has the same doping type as the highly-doped drain region; and the channel region located below a portion of the control gate portion in the highly-doped source region has double-diffusion source doped impurities. The TFET device according to the invention improves its performance, and the preparation method thereof is simple. | 2015-02-19 |
20150048314 | PHOTOACTIVE DEVICES INCLUDING PORPHYRINOIDS WITH COORDINATING ADDITIVES - Coordinating additives are included in porphyrinoid-based materials to promote intermolecular organization and improve one or more photoelectric characteristics of the materials. The coordinating additives are selected from fullerene compounds and organic compounds having free electron pairs. Combinations of different coordinating additives can be used to tailor the characteristic properties of such porphyrinoid-based materials, including porphyrin oligomers. Bidentate ligands are one type of coordinating additive that can form coordination bonds with a central metal ion of two different porphyrinoid compounds to promote porphyrinoid alignment and/or pi-stacking. The coordinating additives can shift the absorption spectrum of a photoactive material toward higher wavelengths, increase the external quantum efficiency of the material, or both. | 2015-02-19 |
20150048315 | ORGANIC THIN-FILM TRANSISTOR - An n-type organic thin-film transistor including a substrate, a gate, and a dielectric layer covering the substrate and the gate. A semiconductor-insulator polymer blend layer is disposed on the dielectric layer; A source and a drain are disposed on top of the semiconductor-insulator polymer blend layer. | 2015-02-19 |
20150048316 | ORGANIC LIGHT EMITTING DISPLAY DEVICE - An organic light emitting display device includes a substrate having a non-light emitting region and a light emitting region, a photochromic layer in a path of light that is emitted from the light emitting region and a light blocking layer on the photochromic layer, wherein the light blocking layer comprises a plurality of light blocking patterns that are spaced from each other, the light blocking patterns overlap the light emitting region, and a space between adjacent light blocking patterns exposes the non-light emitting region. | 2015-02-19 |
20150048317 | SOLID STATE IMAGING DEVICE - According to one embodiment, solid state imaging device includes, a semiconductor substrate and a photoelectric conversion unit formed in the semiconductor substrate or above the semiconductor substrate. Further, the photoelectric conversion unit is provided with a first photoelectric conversion unit and a second photoelectric conversion unit. One of the first and second photoelectric conversion unit uses at least a part of the semiconductor substrate as a first photoelectric conversion layer, and the other of the first and second photoelectric conversion unit uses an inorganic semiconductor material that is of a different type from the semiconductor substrate as a second photoelectric conversion layer. The second photoelectric conversion unit photoelectrically converts light in a wavelength range that had permeated the first photoelectric conversion unit. | 2015-02-19 |
20150048318 | ORGANIC LIGHT-EMITTING DIODE (OLED) DISPLAY AND METHOD OF MANUFACTURING SAME - An organic light-emitting diode (OLED) display is disclosed. In one aspect, the OLED display includes a substrate, a pixel electrode disposed on the substrate and a pixel defining layer which covers an edge of the pixel electrode and exposes a center portion of the pixel electrode. The OLED display also includes a plurality of fine patterns disposed on the center portion, wherein the fine patterns are formed of the same material as that of the pixel defining layer. | 2015-02-19 |
20150048319 | ORGANIC LIGHT-EMITTING DISPLAY APPARATUS - Provided is an organic light-emitting display apparatus including: a substrate having one or more side walls; a display unit positioned on the substrate; and an encapsulation layer deposited over the display unit and contacting each of the one or more side walls, wherein a height of an outer end portion of the encapsulation layer is less than that of each of the side walls. | 2015-02-19 |
20150048320 | THIN-FILM TRANSISTOR ARRAY SUBSTRATE, DISPLAY DEVICE INCLUDING THE SAME, AND METHOD OF MANUFACTURING THE THIN-FILM TRANSISTOR ARRAY SUBSTRATE - A method of manufacturing a thin film transistor (TFT) array substrate is disclosed. In one aspect, the method includes forming an active layer on a substrate, forming a first insulating layer on the substrate to cover the active layer, and forming a first gate electrode on the first insulating layer in an area corresponding to the active layer, doping the active layer with ion impurities, forming a second insulating layer on the first insulating layer to cover the first gate electrode, performing an annealing process on the active layer, forming a lower electrode of a capacitor on the second insulating layer, forming a third insulating layer on the second insulating layer to cover the lower electrode, wherein the third insulating layer has a dielectric constant that is greater than those of the first and second insulating layers, and forming an upper electrode of the capacitor on the third insulating layer. | 2015-02-19 |
20150048321 | ANTHRACENE-BASED COMPOUND AND ORGANIC LIGHT-EMITTING DEVICE INCLUDING THE SAME - An anthracene-based compound and an organic light-emitting device including the anthracene-based compound, the anthracene-based compound being represented by Formula 1, below: | 2015-02-19 |
20150048322 | ORGANIC LIGHT EMITTING DIODE DISPLAY - OLED display that includes: a substrate; a plurality of thin film transistors formed on the substrate; a plurality of first electrodes respectively connected to the thin film transistors; a pixel definition layer formed on the substrate and having a first opening, a second opening, and a third opening respectively exposing first, second, and third first electrodes of the plurality of first electrodes; an emission layer formed at the first opening, the second opening, and the third opening; and a second electrode formed on the emission layer, wherein the first opening has a first pair of boundary lines facing each other and a second pair of boundary lines facing each other, and the first pair of boundary lines overlap boundary lines of a pair of boundary lines of the first first electrode or are positioned outside the boundary lines of the pair of boundary lines of the first first electrode. | 2015-02-19 |
20150048323 | CONDENSED-CYCLIC COMPOUND AND ORGANIC LIGHT-EMITTING DEVICE INCLUDING THE SAME - A condensed-cyclic compound and an organic light-emitting device including the same, the compound being represented by Formula 1, below: | 2015-02-19 |
20150048324 | HETEROCYCLIC COMPOUND AND ORGANIC LIGHT-EMITTING DIODE INCLUDING THE SAME - A heterocyclic compound represented by Formula 1 and an organic light-emitting diode including the same: | 2015-02-19 |
20150048325 | ORGANIC LIGHT EMITTING DIODE DISPLAY - An organic light emitting diode (OLED) display is provided. An OLED display in accordance with an exemplary embodiment may include a substrate including a first subpixel, a second subpixel, and a third subpixel, a first electrode disposed on each of the first subpixel, the second subpixel, and the third subpixel, a second electrode facing the first electrode, a first common layer disposed on the first subpixel and the second subpixel, a first emission layer and a second emission layer disposed on the first common layer, a second common layer disposed on the third subpixel, and a third emission layer disposed on the second common layer. The first common layer may include a first doping layer and a second doping layer disposed on the first doping layer. Each of the doping layers may including a p-type dopant, and the second common layer may be formed as a single layer. | 2015-02-19 |
20150048326 | DISPLAY APPARATUS AND METHOD OF FABRICATING THE SAME - Provided is a display apparatus including: a substrate including a display area and a periphery; a display element disposed on the display area of the substrate; and an encapsulation layer including a first inorganic layer, an organic layer, and a second inorganic layer that are sequentially formed to cover the display element, wherein the organic layer includes: a first organic layer formed on of the periphery of the substrate and on the substrate; and a second organic layer formed on the first inorganic layer so as to overlap the display element. | 2015-02-19 |
20150048327 | ORGANIC COMPOUND AND ORGANIC LIGHT EMITTING DIODE DEVICE INCLUDING THE SAME - A compound is represented by the following Chemical Formula 1: | 2015-02-19 |
20150048328 | DISPLAY UNIT, METHOD OF MANUFACTURING DISPLAY UNIT, AND ELECTRONIC APPARATUS - A display unit includes a plurality of first electrodes provided to respective pixels; an insulating layer having an opening facing each of the first electrodes and having an overhang at an edge of the opening; a charge injection-transport layer being cut or having higher resistance at the overhang of the insulating layer to exhibit one or both of a charge injection property and a charge transport property; an organic layer including one light-emitting layer or a plurality of light-emitting layers common to all of the pixels; and a second electrode formed on an entire surface of the organic layer, the first electrodes, the insulating layer, the charge injection-transport layer, the organic layer, and the second electrode being disposed in this order from a substrate side. | 2015-02-19 |
20150048329 | FLEXIBLE DISPLAY - A flexible display may suppress a generation of cracks in an inorganic layer and suppress the spread of cracks. A flexible display includes a flexible substrate and an inorganic layer formed on the flexible substrate. A display unit is formed on the inorganic layer. The display unit includes a plurality of pixels. Each pixel includes an organic light emitting diode. A thin film encapsulation layer covers the display unit. A crack suppressing layer is formed along the edge of the flexible substrate. The crack suppressing layer is disposed on the inorganic layer at an exterior side of the thin film encapsulation layer. | 2015-02-19 |
20150048330 | ORGANIC LIGHT-EMITTING DISPLAY APPARATUS AND METHOD OF MANUFACTURING THE SAME - A an organic light-emitting display apparatus, including a first substrate, a display unit having a plurality of organic light-emitting devices that is formed on the first substrate, a second substrate disposed on the display unit, and a filler included between the first substrate and the second substrate. The organic light-emitting device includes a first electrode formed on the first substrate, an intermediate layer that is disposed on the first electrode and includes an organic emission layer, and a porous second electrode disposed on the intermediate layer. | 2015-02-19 |
20150048331 | ORGANIC LIGHT-EMITTING DISPLAY APPARATUS AND METHOD OF MANUFACTURING SAME - An organic light-emitting display apparatus includes a substrate; a display unit which defines an active area on the substrate and includes a thin film transistor and an organic light-emitting device electrically connected to each other; and an encapsulation layer disposed on a top surface and a side surface of the display unit, the encapsulation layer including at least a first inorganic layer, a first organic layer, and a second inorganic layer that are sequentially stacked, and the first organic layer covers the first inorganic layer. | 2015-02-19 |
20150048332 | AMINE-BASED COMPOUND AND ORGANIC LIGHT-EMITTING DIODE INCLUDING THE SAME - An amine-based compound is represented by Formula 1 below: | 2015-02-19 |
20150048333 | ORGANIC LIGHT EMITTING DIODE DISPLAY AND METHOD FOR PREPARING THE SAME - An organic light emitting diode display includes an organic light emitting panel, a high refractive organic film layer on the organic light emitting panel, the high refractive organic film layer including a convex portion having a convex shape with respect to the organic light emitting panel, a low refractive organic film layer on the high refractive organic film, the low refractive organic film layer including a concave portion corresponding to the convex portion of the high refractive organic film layer, a color filter on the low refractive organic film layer, and a light blocking member having an opening corresponding to the color filter. | 2015-02-19 |
20150048334 | PHOTOCURABLE COMPOSITION AND ENCAPSULATED APPARATUS PREPARED USING THE SAME - A photocurable composition, a composition for encapsulation of an organic light emitting diode, and an encapsulated apparatus, wherein, in the photocurable composition, when A represents a glass-metal alloy die shear strength in kgf between a glass substrate and a Ni/Fe alloy after curing, and B represents curing shrinkage in % as determined by Equation 1, below, and the photocurable composition has a value for A/B of about 0.7 kgf/% or more and the glass-metal alloy die shear strength of about 2.5 kgf or more, | 2015-02-19 |
20150048335 | ORGANIC LIGHT-EMITTING DISPLAY APPARATUS AND METHOD OF MANUFACTURING THE SAME - An organic light-emitting display apparatus includes a plurality of pixels, a plurality of first electrodes, a plurality of second electrodes, an intermediate layer, a third electrode, an auxiliary layer, and a fourth electrode. Each pixel includes a first region that emits light in a first direction and a second region that emits light in a second direction that is opposite to the first direction. The first electrodes are respectively located in the first region of each of the pixels. The second electrodes are respectively located in the second region of each of the plurality of pixels. The intermediate layer is on the plurality of first electrodes and the plurality of second electrodes, and includes an organic emission layer. The third electrode is on the intermediate layer and in the first and second regions. The fourth electrode is in the first region and contacts the third electrode. | 2015-02-19 |
20150048336 | ORGANIC ELECTROLUMINESCENCE PANEL AND METHOD FOR PRODUCING THE SAME - In an organic EL panel, a transparent conductive film, a functional layered body including at least one light-emitting layer, and an opposing electrode film are layered in this order on a substrate, and the light-emitting layer which overlaps the transparent conductive film and the opposing electrode film serves as a light-emitting portion. The organic EL panel has at least one auxiliary electrode that is formed on the substrate below the light-emitting portion and directly covered with the transparent conductive film. The transparent conductive film has a film thickness more than that of the auxiliary electrode and the side surface of the transparent conductive film is covered with the functional layered body. | 2015-02-19 |
20150048337 | Organic Light-Emitting Component - An organic light-emitting component includes a first light-emitting layer sequence, which is designed to emit light in a first wavelength range during the operation of the component. A second light-emitting layer sequence which is designed to emit light in a second wavelength range during the operation of the component. A charge carrier generating layer sequence which is designed to output charge carriers to the first light-emitting layer sequence and to the second light-emitting layer sequence during the operation of the component. The first wavelength range differs from the second wavelength range. The charge carrier generating layer sequence is arranged between the first light-emitting layer sequence and the second light-emitting layer sequence in a stacking direction of the organic light-emitting component. | 2015-02-19 |
20150048338 | LIGHT-EMITTING MATERIAL, AND ORGANIC LIGHT-EMITTING ELEMENT - The compound represented by the following general formula is useful as a light-emitting material for an organic light-emitting device. Z | 2015-02-19 |
20150048339 | ORGANIC EL DISPLAY DEVICE - An organic EL display device including a substrate, a transparent electrode, a luminescent layer, and a metal electrode layer in this order from a light emission side, a circularly polarizing plate disposed on the light emission side of the substrate, the circularly polarizing plate including a polarizing film and phase difference films that stacked on each other. The phase difference film includes a resin composition (A) containing polystyrene-based polymer having a syndiotactic structure and polyarylene ether, a ratio of the polystyrene-based polymer having the syndiotactic structure with respect to the polyarylene ether in the resin composition (A) is 65:35 to 55:45, being a weight ratio of (the polystyrene-based polymer having the syndiotactic structure) with respect to (the polyarylene ether), the phase difference film satisfies a relation Re | 2015-02-19 |
20150048340 | GREEN LUMINESCENT MATERIALS - There is provided a compound having Formula I | 2015-02-19 |
20150048341 | ORGANIC ELECTROLUMINESCENT ELEMENT AND METHOD FOR MANUFACTURING THE SAME - Organic electroluminescent element capable of conveniently and precisely establishing the emission color of the element. The organic electroluminescent element includes a pair of electrodes and a light-emitting layer provided between the electrodes and presents an emission color at the coordinate Ao (Xo, Yo) in CIE 1931 chromaticity coordinate system. The light-emitting layer contains in the same layer, a light emitting material A1 that presents an emission color at the coordinate A1 (x1, y1) in the CIE 1931 chromaticity coordinate system and a light emitting material A2 that presents an emission color at the coordinate A2 (x2, y2) in the CIE 1931 chromaticity coordinate system; a distance L | 2015-02-19 |
20150048342 | ORGANIC ELECTROLUMINESCENT ELEMENT AND METHOD FOR MANUFACTURING THE SAME - Organic electroluminescent element capable of conveniently and precisely establishing the emission color of the element and capable of fine-adjusting the emission color in the white region. The organic electroluminescent element includes a pair of electrodes and a light-emitting layer provided between the electrodes and presents an emission color at the coordinate Ao (Xo, Yo) in the CIE 1931 chromaticity coordinate system. The light-emitting layer contains in the same layer, a white light emitting material A1 that presents an emission color at the coordinate A1 (x1, y1) in the CIE 1931 chromaticity coordinate system and a white light emitting material A2 that presents an emission color at the coordinate A2 (x2, y2) different from the coordinate A1 (x1, y1) in the CIE 1931 chromaticity coordinate system. A distance L | 2015-02-19 |
20150048343 | HETEROCYCLIC COMPOUND AND ORGANIC LIGHT-EMITTING DIODE INCLUDING THE SAME - A heterocyclic compound represented by Formula 1 and an organic light-emitting diode including the same: | 2015-02-19 |
20150048344 | ORGANIC LIGHT EMITTING DIODE DISPLAY - An organic light emitting diode (OLED) display according to an example embodiment of the present invention includes: a substrate and an encapsulation substrate facing each other; a sealing member bonding the substrate and the encapsulation substrate to seal the substrate and the encapsulation substrate; a plurality of pixels positioned on the substrate sealed by the sealing member; a driver positioned on the substrate and electrically connected to the pixels by a plurality of wires; and an insulating layer formed on the substrate and having a recess portion formed at a region corresponding to the sealing member, wherein the wire is positioned within the recess portion. | 2015-02-19 |
20150048345 | DISPLAY DEVICE AND ELECTRONIC DEVICE - There is provided a display device including a light-emitting element corresponding to a pixel for a color, and a white color filter corresponding to a white pixel. Transmittance of the white color filter is based on neutral density (ND) transmittance that is uniform throughout an entire wavelength band of visible light, and transmittance in a particular wavelength band in the entire wavelength band of the visible light is decreased to be lower than the ND transmittance. | 2015-02-19 |
20150048346 | IN-CELL OLED TOUCH DISPLAY PANEL STRUCTURE OF NARROW BORDER - An in-cell OLED touch panel structure of narrow border includes an upper substrate, a lower substrate, an OLED layer configured between the upper and lower substrates, a black matrix layer, a first sensing electrode layer, a second sensing electrode layer, and a thin film transistor layer. The black matrix layer is composed of a plurality of opaque lines. The first sensing electrode layer includes M first conductor line units and N connection lines. The second sensing electrode layer includes N second conductor line units. Each second conductor line unit makes use of a corresponding i-th connection line to be extended to one edge of the in-cell OLED touch panel structure. The M first conductor line units, the N connection lines, and the N second conductor line units are disposed at positions corresponding to those of the plurality of opaque lines of the black matrix layer. | 2015-02-19 |
20150048347 | ORGANIC ELECTRO LUMINESCENT DISPLAY DEVICE - An organic EL display device includes plural pixels that is arranged on a substrate in a matrix, a light shielding film that shields boundaries of the plurality of pixels, and a light emitting area in which an organic layer that is arranged between a lower electrode and an upper electrode, and formed of a plurality of layers including a light emitting layer that emits a light comes in contact with the lower electrode, in each of the plurality of pixels, in which the light shielding film has wide portions and narrow portions which are arranged along sides of the pixels, and different in width from each other. | 2015-02-19 |
20150048348 | DISPLAY PANEL - A display panel includes a first substrate, a lighting device emitting a monochrome light, and a color conversion layer comprising a quantum dots layer. The display panel defines a plurality of pixel areas, each pixel area includes a plurality of sub-pixels for correspondingly emitting light of different colors. The color conversion layer receives the monochrome light and converts the monochrome light to the light of different colors. | 2015-02-19 |
20150048349 | DISPLAY DEVICE - A display device, an electronic device, or a lighting device that is unlikely to be broken is provided. A flexible first substrate and a flexible second substrate overlap with each other with a display element provided therebetween. A flexible third substrate is bonded on the outer surface of the first substrate, and a flexible fourth substrate is bonded on the outer surface of the second substrate. The third substrate is formed using a material softer than the first substrate, and the fourth substrate is formed using a material softer than the second substrate. | 2015-02-19 |
20150048350 | Lighting Tiles - We describe a lighting tile having a substrate bearing an electrode structure, the electrode structure comprising: a plurality of electrically conductive tracks disposed over said substrate; and an electrical connection region connecting to said plurality of tracks; wherein the height of said tracks tapers away from said connection region to compensate for a reduction in luminance from said lighting tile array from the electrical connection region which arises from a non-uniform voltage drop which appears along the tracks in use. Advantageously the tracks are fabricated by electroplating: then, as the rate of deposition is determined by the voltage drop along a track during plating, the height of the deposited tracks, and therefore their resistance, will match the profile required in operation to compensate for the reduction in luminance which would otherwise occur. | 2015-02-19 |
20150048351 | COMPOUND HAVING ACRIDAN RING STRUCTURE, AND ORGANIC ELECTROLUMINESCENT DEVICE - An organic compound with characteristics excelling in hole-injecting/transporting performance and having an electron blocking ability, a highly stable thin-film state, and excellent heat resistance is provided as material for an organic electroluminescent device of high efficiency and high durability, and the organic electroluminescent device of high efficiency and high durability is provided using this compound. | 2015-02-19 |
20150048352 | WAFER FOR FORMING IMAGING ELEMENT, METHOD FOR MANUFACTURING SOLID-STATE IMAGING ELEMENT, AND IMAGING ELEMENT CHIP - A wafer for forming an imaging element has a test pattern and a plurality of imaging element units. The wafer has an imaging region which includes a great number of photoelectric conversion pixels, an imaging element units and a test pattern. The test pattern includes a testing organic photoelectric conversion film and a testing counter electrode having the same configuration and formed at the same time as the organic photoelectric conversion film and a counter electrode, respectively of the photoelectric conversion pixels. A first testing terminal is electrically connected to the undersurface side of the testing organic photoelectric conversion film, and a second testing terminal is electrically connected to the testing counter electrode. A protective film is formed over the entire semiconductor wafer so as to cover the imaging region and the test pattern, and is then partially removed so that a part of each testing terminal is exposed. | 2015-02-19 |
20150048353 | ORGANIC LIGHT-EMITTING DEVICE AND IMAGE DISPLAY SYSTEM EMPLOYING THE SAME - An organic light-emitting device and an image display system employing the same are provided. The organic light-emitting device includes: a first substrate; an organic light-emitting pixel structure disposed on a top surface of the first substrate; a second substrate having a bottom surface opposite to the top surface of the first substrate; and an optical functional layer disposed over the organic light-emitting pixel structure. | 2015-02-19 |
20150048354 | DISPLAY APPARATUS - Provided is a display apparatus and a method of manufacture. The display apparatus includes a first substrate with a plurality of organic electroluminescence devices, a second substrate with a color filter, the second substrate facing the first substrate, and an adhesive layer disposed between the first substrate and the second substrate so as to cover the plurality of organic electroluminescence devices, the adhesive layer being made of a material selected from the group consisting of a phenol resin, a melanin resin, an unsaturated polyester resin, an epoxy resin, a silicon resin and a polyurethane resin. | 2015-02-19 |
20150048355 | ORGANIC ELECTROLUMINESCENCE DEVICE, DISPLAY UNIT INCLUDING THE SAME, AND METHOD OF MANUFACTURING AN ORGANIC ELECTROLUMINESCENCE DEVICE - An organic electroluminescence device includes a first electrode, an organic layer formed on the first electrode and including a light-emitting layer, an intermediate layer formed on the organic layer; and a second electrode formed on the intermediate layer and having a thickness of 6 nm or less. | 2015-02-19 |
20150048356 | ADHESIVE FILM AND SEALING PRODUCT FOR ORGANIC ELECTRONIC DEVICE USING SAME - Provided are an adhesive film, and an organic electronic device (OED) encapsulation product using the same. Dimensional stability, lifespan, and durability may be enhanced even when a panel of an organic electronic device is large-sized and formed as a thin film by controlling dimensional tolerance and edge angular tolerance of the adhesive film, thereby ensuring long-term reliability, and process yields may be enhanced when the adhesive film is applied to an automation process. | 2015-02-19 |
20150048357 | LIGHT EMITTING DEVICE AND METHOD OF MANUFACTURING THE SAME - A light emitting device is provided which has a structure for lowering energy barriers at interfaces between layers of a laminate organic compound layer. A mixed layer ( | 2015-02-19 |
20150048358 | LIGHT-EMITTING DEVICE - It is an object of the present invention to provide a light-emitting device where periphery deterioration can be prevented from occurring even when an organic insulating film is used as an insulating film for the light-emitting device. In addition, it is an object of the present invention to provide a light-emitting device where reliability for a long period of time can be improved. A structure of an inorganic film, an organic film, and an inorganic film is not continuously provided from under a sealing material under a cathode for a light-emitting element. In addition, penetration of water is suppressed by defining the shape of the inorganic film that is formed over the organic film even when a structure of an inorganic film, an organic film, and an inorganic film is continuously provided under a cathode for a light-emitting element. | 2015-02-19 |
20150048359 | SEMICONDUCTOR DEVICE - A semiconductor device according to an embodiment, includes a source electrode, a drain electrode arranged apart from the source electrode, an oxide semiconductor film, a gate dielectric film, and a gate electrode. The oxide semiconductor film is arranged below the source electrode and the drain electrode to connect the source electrode and the drain electrode. The gate dielectric film is formed below the oxide semiconductor film such that a thickness below at least one of the source electrode and the drain electrode is made thinner than a thickness below a channel region of the oxide semiconductor film between the source electrode and the drain electrode. The gate electrode is arranged below the gate dielectric film and formed in a position where one of portions of the gate electrode overlaps with the source electrode and another one of the portions of the gate electrode overlaps with the drain electrode. | 2015-02-19 |
20150048360 | SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE MANUFACTURING METHOD - A semiconductor device includes a substrate, a TFT supported by the substrate, an auxiliary capacitor, a source wiring line, and a gate wiring line. The auxiliary capacitor has a first auxiliary capacitor electrode, a second auxiliary capacitor electrode, and a first insulating layer. When viewed from the direction normal to the substrate, the gate wiring line and the source wiring line overlap to form a gate-source intersection region in which the first insulating layer and a second insulating layer are formed. The distance between the first auxiliary capacitor electrode and the second auxiliary capacitor electrode is smaller than the distance between the gate wiring line and the source wiring line in the gate-source intersection region. | 2015-02-19 |
20150048361 | DISPLAY UNIT AND ELECTRONIC APPARATUS - A display unit includes: an oxide semiconductor layer configured to form a channel; a first layer having electrical insulation or electrical conductivity; and a second layer including a hydrogen absorbent and disposed between the oxide semiconductor layer and the first layer. | 2015-02-19 |
20150048362 | SEMICONDUCTOR DEVICE - To provide a semiconductor device with excellent charge retention characteristics, an OS transistor is used as a transistor whose gate is connected to a node for retaining charge. Charge is stored in a first capacitor, and data at the node for retaining charge is read based on whether the stored charge is transferred to a second capacitor. Since a Si transistor, in which leakage current through a gate insulating film occurs, is not used as a transistor connected to the node for retaining charge, charge retention characteristics of the node are improved. In addition, the semiconductor device operates in data reading without requiring transistor performance equivalent to that of a Si transistor. | 2015-02-19 |
20150048363 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - Homogeneity and stability of electric characteristics of a thin film transistor included in a circuit are critical for the performance of a display device including said circuit. An object of the invention is to provide an oxide semiconductor film with low hydrogen content and which is used in an inverted staggered thin film transistor having well defined electric characteristics. In order to achieve the object, a gate insulating film, an oxide semiconductor layer, and a channel protective film are successively formed with a sputtering method without being exposed to air. The oxide semiconductor layer is formed so as to limit hydrogen contamination, in an atmosphere including a proportion of oxygen. In addition, layers provided over and under a channel formation region of the oxide semiconductor layer are formed using compounds of silicon, oxygen and/or nitrogen. | 2015-02-19 |
20150048364 | OXIDE SEMICONDUCTOR, THIN FILM TRANSISTOR, AND DISPLAY DEVICE - An object is to control composition and a defect of an oxide semiconductor, another object is to increase a field effect mobility of a thin film transistor and to obtain a sufficient on-off ratio with a reduced off current. A solution is to employ an oxide semiconductor whose composition is represented by InMO | 2015-02-19 |
20150048365 | SEMICONDUCTOR DEVICE - Reducing hydrogen concentration in a channel formation region of an oxide semiconductor is important in stabilizing threshold voltage of a transistor including an oxide semiconductor and improving reliability. Hence, hydrogen is attracted from the oxide semiconductor and trapped in a region of an insulating film which overlaps with a source region and a drain region of the oxide semiconductor. Impurities such as argon, nitrogen, carbon, phosphorus, or boron are added to the region of the insulating film which overlaps with the source region and the drain region of the oxide semiconductor, thereby generating a defect. Hydrogen in the oxide semiconductor is attracted to the defect in the insulating film. The defect in the insulating film is stabilized by the presence of hydrogen. | 2015-02-19 |
20150048366 | SEMICONDUCTOR DEVICE - A solid-state image sensor which holds a potential for a long time and includes a thin film transistor with stable electrical characteristics is provided. When the off-state current of a thin film transistor including an oxide semiconductor layer is set to 1×10 | 2015-02-19 |
20150048367 | ARRAY SUBSTRATE - An array substrate includes a substrate and a plurality of pixel structures. At least one pixel structure includes a gate electrode, a gate insulating layer, a source electrode and a drain electrode, a patterned semiconductor layer, a first passivation layer, and a transparent conductive pattern disposed in a pixel region of the substrate. The patterned semiconductor layer includes a first semiconductor pattern and a second semiconductor pattern. The first semiconductor pattern substantially corresponds to the gate electrode and covers a portion of the source electrode and a portion of the drain electrode. The second semiconductor pattern covers a portion of the drain electrode. The first passivation layer is disposed on the patterned semiconductor layer and has a first opening exposing a portion of the second semiconductor pattern. The transparent conductive pattern is disposed on the first passivation layer and electrically connected to the second semiconductor pattern through the first opening. | 2015-02-19 |
20150048368 | OXIDE SEMICONDUCTOR STACKED FILM AND SEMICONDUCTOR DEVICE - An oxide semiconductor stacked film which does not easily cause a variation in electrical characteristics of a transistor and has high stability is provided. Further, a transistor which includes the oxide semiconductor stacked film in its channel formation region and has stable electrical characteristics is provided. An oxide semiconductor stacked film includes a first oxide semiconductor layer, a second oxide semiconductor layer, and a third oxide semiconductor layer which are sequentially stacked and each of which contains indium, gallium, and zinc. The content percentage of indium in the second oxide semiconductor layer is higher than that in the first oxide semiconductor layer and the third oxide semiconductor layer, and the absorption coefficient of the oxide semiconductor stacked film, which is measured by the CPM, is lower than or equal to 3×10 | 2015-02-19 |
20150048369 | SEMICONDUCTOR DEVICE AND ELECTRONIC APPARATUS - A semiconductor device includes: a transistor including an oxide semiconductor film; a first insulating film covering the oxide semiconductor film and including a first resin material; and a second insulating film including a second resin material that has polarity different from polarity of the first resin material, the second insulating film being laminated on the first insulating film. | 2015-02-19 |
20150048370 | SEMICONDUCTOR DEVICE AND DRIVING METHOD THEREOF - To reduce adverse effect of variations in threshold voltage. A semiconductor device includes a transistor including a gate connected to one electrode of a capacitor and one terminal of a SW1, a source and a drain one of which is connected to one terminal of a SW2 and one terminal of a SW3 and the other of which is connected to the other terminal of the SW1 and one terminal of a SW4; a first wiring electrically connected to the other terminal of the SW2; a second wiring electrically connected to the other terminal of the SW4; a load including electrodes one of which is connected to one electrode of the capacitor and the other terminal of the SW3; and a third wiring connected to the other electrode of the load. | 2015-02-19 |
20150048371 | METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE - To provide a method by which a semiconductor device including a thin film transistor with excellent electric characteristics and high reliability is manufactured with a small number of steps. After a channel protective layer is formed over an oxide semiconductor film containing In, Ga, and Zn, a film having n-type conductivity and a conductive film are formed, and a resist mask is formed over the conductive film. The conductive film, the film having n-type conductivity, and the oxide semiconductor film containing In, Ga, and Zn are etched using the channel protective layer and gate insulating films as etching stoppers with the resist mask, so that source and drain electrode layers, a buffer layer, and a semiconductor layer are formed. | 2015-02-19 |
20150048372 | TRANSISTOR, METHOD OF MANUFACTURING THE TRANSISTOR, SEMICONDUCTOR UNIT, METHOD OF MANUFACTURING THE SEMICONDUCTOR UNIT, DISPLAY, AND ELECTRONIC APPARATUS - A method of manufacturing a transistor includes: forming an oxide semiconductor film and a gate electrode on a substrate, the oxide semiconductor film having a channel region, and the gate electrode facing the channel region; and forming an insulating film covering the gate electrode and the oxide semiconductor film. Infiltration of moisture from the insulating film into the oxide semiconductor film is suppressed by the substrate. | 2015-02-19 |
20150048373 | METHOD AND LAYOUT FOR DETECTING DIE CRACKS - A method of detecting a crack in a semiconductor die is provided. The method includes the following steps. A semiconductor die having an outer edge is provided, wherein a conductive feature is formed on semiconductor die along the outer edge. The conductive feature is biased, and a leakage current of the semiconductor die is measured, such that the crack propagating in the semiconductor the is detected. A semiconductor the with a layout for detecting a die crack and the method of manufacturing it are also provided. The semiconductor the includes a semiconductor the having an outer edge, and a conductive feature on the semiconductor die along the outer edge. The conductive feature is configured to be biased by an external pin. | 2015-02-19 |
20150048374 | Light Sensor and Manufacturing Method Thereof - A light sensor and a manufacturing method thereof are disclosed. The light sensor is capable of being coupled to a carry object and includes a sensing chip and a plurality of conductive connecting elements. The sensing chip includes a first surface and a second surface opposite to each other. The sensing chip also includes a sensing unit disposed between the first surface and the second surface and at least partially exposed by a window formed on the second surface. The first surface faces the carry object when the light sensor is coupled to a carry object. The conductive connecting elements are disposed on the first surface and coupled to the sensing unit in order to couple the light sensor to the carry object. | 2015-02-19 |
20150048375 | METHOD OF MANUFACTURING STRETCHABLE SUBSTRATE AND STRETCHABLE SUBSTRATE MANUFACTURED USING THE METHOD - Provided is a method of manufacturing a gradually stretchable substrate. The method includes forming convex regions and concave regions on a top surface of a stretchable substrate by compressing a mold onto the stretchable substrate and forming non-stretchable patterns by filling the concave regions of the stretchable substrate. The stretchable substrate includes a stretchable region defined by the non-stretchable patterns, the non-stretchable patterns have side surfaces in contact with the stretchable region, and the side surfaces of the non-stretchable patterns are formed of protrusions and a non-protrusion between the protrusions repetitively connected to one another. | 2015-02-19 |
20150048376 | Semiconductor Device, and Display Device and Electronic Device Utilizing the Same - A semiconductor device having a normal function means is provided, in which the amplitude of an output signal is prevented from being decreased even when a digital circuit using transistors having one conductivity is employed. By turning OFF a diode-connected transistor | 2015-02-19 |
20150048377 | SEMICONDUCTOR DEVICE, AND MANUFACTURING METHOD FOR SAME - A semiconductor device of the present invention includes an n-channel first thin film transistor and a p-channel second thin film transistor on one and the same substrate. The first thin film transistor has a first semiconductor layer ( | 2015-02-19 |
20150048378 | IMAGE PICKUP ELEMENT AND IMAGE PICKUP DEVICE - Provided is an image pickup element that includes a photoelectric conversion section provided on a semiconductor substrate and including a chalcopyrite-based compound. The photoelectric conversion section has a band gap that is relatively wide on a light incident surface side. | 2015-02-19 |
20150048379 | Light Emitting Diode and Manufacturing Method Therefor - Disclosed are a light emitting diode having an n-doped ohm contact buffer layer and a manufacturing method therefor. In the present invention, a highly n-doped ohm contact buffer layer with an electronic concentration up to 1×10 | 2015-02-19 |
20150048380 | OPTICAL SUBSTRATE, SEMICONDUCTOR LIGHT-EMITTING ELEMENT AND METHOD OF MANUFACTURING SEMICONDUCTOR LIGHT-EMITTING ELEMENT - In an optical substrate ( | 2015-02-19 |
20150048381 | METHOD FOR THE REUSE OF GALLIUM NITRIDE EPITAXIAL SUBSTRATES - A method for the reuse of gallium nitride (GaN) epitaxial substrates uses band-gap-selective photoelectrochemical (PEC) etching to remove one or more epitaxial layers from bulk or free-standing GaN substrates without damaging the substrate, allowing the substrate to be reused for further growth of additional epitaxial layers. The method facilitates a significant cost reduction in device production by permitting the reuse of expensive bulk or free-standing GaN substrates. | 2015-02-19 |
20150048382 | SILICON CARBIDE SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - In a silicon carbide semiconductor device, a p-type SiC layer is disposed in a corner of a bottom of a trench. Thus, even if an electric field is applied between a drain and a gate when a MOSFET is turned off, a depletion layer in a pn junction between the p-type SiC layer and an n | 2015-02-19 |
20150048383 | SILICON CARBIDE SEMICONDUCTOR ELEMENT AND FABRICATION METHOD THEREOF | 2015-02-19 |
20150048384 | SEMICONDUCTOR DEVICE - In a JBS diode using a wide band gap semiconductor, the wide band gap semiconductor has a large built-in voltage, which sometimes causes difficulties for the pn diode portion to turn on, resulting in a problem that resistance to surge currents is not sufficiently ensured. In order to solve this problem, in the wide-band-gap JBS diode, a pn junction of the pn diode is formed away from the Schottky electrode, and well regions are formed so as to have a width narrowed at a portion away from the Schottky electrode. | 2015-02-19 |
20150048385 | LIGHT EMITTING DIODE SUBSTRATE - A method of manufacturing a light emitting diode (LED) substrate includes following steps: providing a nano-patterned substrate, which has a plurality of convex portions and a plurality of first concave portions that are spaced apart from each other, wherein each first concave portion has a depth (d1); forming a plurality of protection structures to cover each convex portion, and exposing a bottom surface of each first concave portion; performing an anisotropic etching processing to etch the bottom surface of each first concave portion which is not covered by the protection structure so as to form a plurality of second concave portions having a depth (d2), and d2 is greater than d1. | 2015-02-19 |
20150048386 | IMAGE SENSING MODULE AND METHOD OF MANUFACTURING THE SAME - An image sensing module includes an image sensing unit, a light transmitting unit, a substrate unit and lens unit. The image sensing unit includes an image sensing element having an image sensing area on the top side of the image sensing element. The light transmitting unit includes a light transmitting element supported above the image sensing element by a plurality of support members. The substrate unit includes a flexible substrate disposed on the image sensing element and electrically connected to the image sensing element through a plurality of electrical conductors, and the flexible substrate has at least one through opening for receiving the light transmitting element. The lens unit includes an opaque holder disposed on the flexible substrate to cover the light transmitting element and a lens assembly connected to the opaque holder and disposed above the light transmitting element. | 2015-02-19 |
20150048387 | Method and System For Generating a Photo-Response From MoS2 Schottky Junctions - Devices incorporating a single to a few-layer MoS | 2015-02-19 |
20150048388 | FLAT PANEL DISPLAY APPARATUS AND METHOD OF MANUFACTURING THE SAME - A flat panel display apparatus including a substrate on which a display unit is formed, an encapsulation member that covers the display unit, a sealant that is formed between the substrate and encapsulation member while the sealant encapsulates the display unit by surrounding the display unit, and a metal layer that is formed on the substrate and located along with the sealant, the metal layer having irregular widths. | 2015-02-19 |