09th week of 2011 patent applcation highlights part 19 |
Patent application number | Title | Published |
20110049470 | DIODE HAVING VERTICAL STRUCTURE AND METHOD OF MANUFACTURING THE SAME - A light emitting diode includes a conductive layer, an n-GaN layer on the conductive layer, an active layer on the n-GaN layer, a p-GaN layer on the active layer, and a p-electrode on the p-GaN layer. The conductive layer is an n-electrode. | 2011-03-03 |
20110049471 | EFFICIENT CARRIER INJECTION IN A SEMICONDUCTOR DEVICE - Semiconductor devices such as VCSELs, SELs, LEDs, and HBTs are manufactured to have a wide bandgap material near a narrow bandgap material. Electron injection is improved by an intermediate structure positioned between the wide bandgap material and the narrow bandgap material. The intermediate structure is an inflection, such as a plateau, in the ramping of the composition between the wide bandgap material and the narrow bandgap material. The intermediate structure is highly doped and has a composition with a desired low electron affinity. The injection structure can be used on the p-side of a device with a p-doped intermediate structure at high hole affinity. | 2011-03-03 |
20110049472 | LIGHT EMITTING DIODE - A light emitting diode (LED) has an n-type semiconductor layer, an active layer, a p-type semiconductor layer, and a transparent electrode layer. The LED includes a tunnel layer interposed between the p-type semiconductor layer and the transparent electrode layer, an opening arranged in the transparent electrode layer so that the tunnel layer is exposed, a distributed Bragg reflector (DBR) arranged in the opening, and an electrode pad arranged on the transparent electrode layer to cover the DBR in the opening. | 2011-03-03 |
20110049473 | Film Wrapped NFET Nanowire - A semiconductor structure includes an n-channel field effect transistor (NFET) nanowire, the NFET nanowire comprising a film wrapping around a core of the NFET nanowire, the film wrapping configured to provide tensile stress in the NFET nanowire. A method of making a semiconductor structure includes growing a film wrapping around a core of an n-channel field effect transistor (NFET) nanowire of the semiconductor structure, the film wrapping being configured to provide tensile stress in the NFET nanowire. | 2011-03-03 |
20110049474 | TUNNEL FIELD EFFECT DEVICES - An indirectly induced tunnel emitter for a tunneling field effect transistor (TFET) structure includes an outer sheath that at least partially surrounds an elongated core element, the elongated core element formed from a first semiconductor material; an insulator layer disposed between the outer sheath and the core element; the outer sheath disposed at a location corresponding to a source region of the TFET structure; and a source contact that shorts the outer sheath to the core element; wherein the outer sheath is configured to introduce a carrier concentration in the source region of the core element sufficient for tunneling into a channel region of the TFET structure during an on state. | 2011-03-03 |
20110049475 | Solid state charge qubit device - This invention concerns a quantum device, suitable for quantum computing, based on dopant atoms located in a solid semiconductor or insulator substrate. In further aspects the device is scaled up. The invention also concerns methods of reading out from the devices, initializing them, using them to perform logic operations and making them. | 2011-03-03 |
20110049476 | IMPACT IONIZATION FIELD-EFFECT TRANSISTOR - An Impact Ionization Field-Effect Transistor (I-MOS) device in which device degradation caused by hot carrier injection into a gate oxide is prevented. The device includes source, drain, and gate contacts, and a channel between the source and the drain. The channel has a dimension normal to the direction of a charge carrier transport in the channel such that the energy separation of the first two sub-bands equals or exceeds the effective energy band gap of the channel material. | 2011-03-03 |
20110049477 | ELECTROACTIVE MATERIALS - There is provided an electroactive material having Formula I | 2011-03-03 |
20110049478 | ELECTROACTIVE MATERIALS - There is provided an electroactive material having Formula I | 2011-03-03 |
20110049479 | BENZO[a]FLUORANTHENE COMPOUND AND ORGANIC LIGHT EMITTING DEVICE USING THE SAME - Provided are a novel benzo[a]fluoranthene compound and an organic light emitting device having extremely good light emitting efficiency, extremely good luminance, and durability. The benzo[a]fluoranthene compound is represented by the following general formula (I): | 2011-03-03 |
20110049480 | Organic semiconductor polymer and transistor including the same - An organic semiconductor polymer and transistor are provided, the organic semiconductor polymer is represented by the following Chemical Formula (1) | 2011-03-03 |
20110049481 | OPTOELECTRONIC DEVICE - An optoelectronic device including a first electrode, an active layer disposed on the first electrode, a second electrode disposed on the active layer, and a self-assembled monolayer interposed between the first electrode and the active layer, interposed between the active layer and the second electrode, or disposed inside the active layer, wherein the self-assembled monolayer includes a first compound and a second compound having different functional groups from each other. | 2011-03-03 |
20110049482 | Novel aromatic compound and organic electroluminescent element containing the same - A novel aromatic compound having an anthracene skeleton structure and an asymmetric molecular structure; and an organic electroluminescence device which comprises a cathode, an anode and an organic thin film layer comprising at least one layer containing a light emitting layer and sandwiched between the cathode and the anode in which at least one layer in the organic thin film layer contains the above novel aromatic compound singly or as a component of a mixture. The organic electroluminescence device exhibits a great luminance of emitted light, a great efficiency of light emission and a high purity of color, emits bluish light, is excellent in stability at high temperatures and has a long life. The organic electroluminescence device can be provided by utilizing the novel aromatic compound. | 2011-03-03 |
20110049483 | ORGANIC ELECTROLUMINESCENCE DEVICE - An organic electroluminescence device including opposite anode and cathode, and a hole-transporting region, an emitting layer and an electron-transporting region in sequential order from the anode between the anode and the cathode, wherein the emitting layer includes a red emitting portion, a green emitting portion, and a blue emitting portion; the blue emitting portion includes a host BH and a fluorescent dopant FBD; the triplet energy E | 2011-03-03 |
20110049484 | HETEROARYLAMINE COMPOUND AND ORGANIC LIGHT-EMITTING DEVICE INCLUDING THE SAME - Embodiments of the present invention are directed to heteroarylamine compounds and organic light-emitting devices including the heteroarylamine compounds. The organic light-emitting devices using the heteroarylamine compounds have high-efficiency, low driving voltages, high luminance and long lifespans. | 2011-03-03 |
20110049485 | ORGANIC LIGHT-EMITTING DEVICE - Embodiments of the present invention are directed to a heterocyclic compound and an organic light-emitting device including the heterocyclic compound. The organic light-emitting devices using the heterocyclic compounds have high-efficiency, low driving voltages, high luminance and long lifespans. | 2011-03-03 |
20110049486 | ORGANIC LIGHT-EMITTING DEVICE - Embodiments of the present invention are directed to a heterocyclic compound and an organic light-emitting device including the heterocyclic compound. The organic light-emitting devices using the heterocyclic compounds have high-efficiency, low driving voltages, high brightness and long lifespans. | 2011-03-03 |
20110049487 | HETEROARYLAMINE COMPOUND AND ORGANIC LUMINESCENCE DEVICE USING THE SAME - Embodiments of the present invention are directed to heteroarylamine compounds and organic luminescence devices including the heteroarylamine compounds. The organic luminescence devices using the heteroarylamine compounds have high-efficiency, low driving voltages, high luminance and long lifetimes. | 2011-03-03 |
20110049488 | HETEROCYCLIC COMPOUND AND ORGANIC LIGHT-EMITTING DEVICE INCLUDING THE SAME - Embodiments of the present invention are directed to heterocyclic compounds and organic light-emitting devices including the heterocyclic compounds. The organic light-emitting devices using the heterocyclic compounds have high-efficiency, low driving voltages, high luminance and long lifespans. | 2011-03-03 |
20110049489 | Top-Gate Bottom-Contact Organic Transistor - Top-gate, bottom-contact organic thin film transistors are provided. The transistors may include metal bilayer electrodes to aid in charge movement within the device. In an embodiment, an organic transistor includes a drain electrode and a source electrode disposed over a first region of a substrate, a transition metal oxide layer disposed over and in direct physical contact with the drain electrode and the source electrode, an organic preferentially hole conducting channel layer disposed over the metal oxide and between the drain electrode and the source electrode, and a gate electrode disposed over the channel. | 2011-03-03 |
20110049490 | HETEROCYCLIC COMPOUND AND ORGANIC LIGHT-EMITTING DEVICE INCLUDING THE SAME - Embodiments of the present invention are directed to heterocyclic compounds and organic light-emitting devices including the heterocyclic compounds. The organic light-emitting devices using the heterocyclic compounds have high-efficiency, low driving voltages, high luminance and long lifespans. | 2011-03-03 |
20110049491 | METHOD FOR MANUFACTURING A MULTI-LAYER STACK STRUCTURE WITH IMPROVED WVTR BARRIER PROPERTY - A method and apparatus for manufacturing a multi-layer stack structure ( | 2011-03-03 |
20110049492 | PHOTOELECTRIC CONVERSION ELEMENT AND IMAGING DEVICE - A photoelectric conversion element includes, in the following order: a substrate; a lower electrode containing titanium nitride; an organic layer including a photoelectric conversion layer; and an upper electrode containing a transparent electrode material. | 2011-03-03 |
20110049493 | ORGANIC LIGHT EMITTING DIODE LIGHTING EQUIPMENT - An organic light emitting diode lighting equipment includes a transparent substrate main body, a first electrode formed on the substrate main body, a subsidiary electrode formed on the first electrode to partition the first electrode at a predetermined distance, an organic emissive layer formed on the first electrode, and a second electrode formed on the organic emissive layer. The subsidiary electrode has an inclined lateral side facing toward the organic emissive layer. | 2011-03-03 |
20110049494 | HETEROARYLAMINE COMPOUND AND ORGANIC LIGHT-EMITTING DEVICE INCLUDING THE SAME - Embodiments of the present invention are directed to heteroarylamine compounds and organic light-emitting devices including the heteroarylamine compounds. The organic light-emitting devices using the heteroarylamine compounds have high-efficiency, low driving voltages, high luminance and long lifespans. | 2011-03-03 |
20110049495 | QUINOXALINE DERIVATIVES AND ORGANIC LIGHT-EMITTING DIODES COMPRISING THE SAME - A quinoxaline derivative represented by Formula (I) or (II) is provided. | 2011-03-03 |
20110049496 | ORGANIC ELECTROLUMINESCENCE DEVICE - An organic electroluminescence device material comprising a metal complex having a neopentyl group, for example, as shown below; and an organic electroluminescence device comprising a substrate having thereon a pair of electrodes and at least one organic layer between the electrodes, the organic layer containing a light emitting layer, wherein any one of the organic layer contains the organic electroluminescence device material. | 2011-03-03 |
20110049497 | MATERIAL FOR ORGANIC ELECTROLUMINESCENCE DEVICE AND ORGANIC ELECTROLUMINESCENCE DEVICE - A material for an organic electroluminescence device, includes: an organic material that is to be provided for a film formation of any of at least one organic layer included in the organic electroluminescence device, the organic material having a water content before the film formation, as measured by the Karl Fischer method, of 100 ppm or more and not more than 1,000 ppm. | 2011-03-03 |
20110049498 | ORGANIC ELECTROLUMINESCENCE DEVICE, METHOD OF MANUFACTURING ORGANIC ELECTROLUMINESCENCE DEVICE, DISPLAY APPARATUS AND ILLUMINATION APPARATUS - An organic electroluminescence device, having a pair of electrodes, and an organic layer containing multiple light emitting layers provided between a pair of electrodes, wherein at least one of the multiple light emitting layers is formed by coating a liquid containing ingredients to constitute the layer in a state of solution or dispersion in an organic solvent through the use of a spraying method. | 2011-03-03 |
20110049499 | TRANSITION METAL COMPLEXES COMPRISING CARBENE LIGANDS SERVING AS EMITTERS FOR ORGANIC LIGHT-EMITTING DIODES (OLED'S) - Use of transition metal complexes of the formula (I) in organic light-emitting diodes | 2011-03-03 |
20110049500 | TRANSITION METAL COMPLEXES COMPRISING CARBENE LIGANDS SERVING AS EMITTERS FOR ORGANIC LIGHT-EMITTING DIODES (OLED'S) - Use of transition metal complexes of the formula (I) in organic light-emitting diodes | 2011-03-03 |
20110049501 | TRANSITION METAL COMPLEXES COMPRISING CARBENE LIGANDS SERVING AS EMITTERS FOR ORGANIC LIGHT-EMITTING DIODES (OLED'S) - Use of transition metal complexes of the formula (I) in organic light-emitting diodes | 2011-03-03 |
20110049502 | ORGANIC LIGHT-EMITTING DISPLAY DEVICE AND METHOD OF MANUFACTURING THE SAME - An organic light-emitting display device includes a substrate; a gate electrode disposed on the substrate, the gate electrode including a first portion of a metal oxide layer and a metal layer; a pixel electrode disposed on the substrate so as to be insulated from the gate electrode, the pixel electrode including a second portion of the metal oxide layer; a gate insulating layer disposed on the substrate to cover the gate electrode; a semiconductor layer disposed on the gate insulating layer, the semiconductor layer including a channel region corresponding to the gate electrode, and first and second regions disposed outside the channel region; a first electrode connected to the first region of the semiconductor layer; a second electrode connected to the second region of the semiconductor layer and the pixel electrode; an ohmic contact layer disposed between the first region of the semiconductor layer and the first electrode and between the second region of the semiconductor layer and the second electrode; a pixel defining layer disposed on the substrate to cover the first electrode, the second electrode, the semiconductor layer, and the pixel electrode, the pixel defining layer including an opening through which the pixel electrode is partially exposed; an organic light-emitting layer disposed on the pixel electrode exposed through the opening; and an opposite electrode covering the organic light-emitting layer. | 2011-03-03 |
20110049503 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - A semiconductor device includes a substrate, a low dielectric constant layer formed on the substrate, a first protection insulating layer formed on the low dielectric constant layer, and a trench with an interconnect embedded in formed in the first protection insulating layer and the low dielectric constant layer. The sidewall of the trench has a structure that the surface of the first protection insulating layer protrudes from the surface of the low dielectric constant layer, a second protection insulating layer formed by a chemical vapor deposition technique is embedded at the surface of the low dielectric constant layer in an area below the first protection insulating layer, and the sidewall of the trench is constituted by the second protection insulating layer and the first protection insulating layer. | 2011-03-03 |
20110049504 | PHOTOELECTRIC CONVERSION ELEMENT - A photoelectric conversion element including an anode, a cathode, an active layer formed between the anode and the cathode, and a functional layer formed between the active layer and the cathode, wherein the functional layer is formed by application of a dispersion liquid containing titanium dioxide particles dispersed therein. | 2011-03-03 |
20110049505 | DEVICES AND METHOD FOR MANUFACTURING A DEVICE - A device includes a first semiconductor chip and a second semiconductor chip which are connected to each other in an electrically conductive manner via a bonding wire, the bonding wire having a contact to the first semiconductor chip at a first contact point and having a contact to the second semiconductor chip at a second contact point, and the device including a further bonding wire which has a further first contact point and a further second contact point, a maximum distance between the bonding wire and a direct connecting line between the first and second contact points perpendicular to the connecting line being greater than a further maximum distance between the further bonding wire and a further connecting line between the further first contact point and the further second contact point perpendicular to the further connecting line. | 2011-03-03 |
20110049506 | STABLE P-TYPE SEMICONDUCTING BEHAVIOUR IN LI AND NI CODOPED ZNO - A method is provided for growing a stable p-type ZnO thin film with low resistivity and high mobility. The method includes providing an n-type Li—Ni co-doped ZnO target in a chamber, providing a substrate in the chamber, and ablating the target to form the thin film on the substrate. | 2011-03-03 |
20110049507 | Organic light emitting diode display and method of manufacturing the same - A display and a method of manufacturing the same, the display including a substrate main body, a first thin film transistor on the substrate main body, the first thin film transistor including a first gate electrode, the first gate electrode including polycrystalline silicon, a first semiconductor layer on the first gate electrode, first source electrode, and a first drain electrode, and a second thin film transistor on the substrate main body, the second thin film transistor including a second semiconductor layer, the second semiconductor layer including polycrystalline silicon and being on a same plane as the first gate electrode, a second gate electrode on the second semiconductor layer, a second source electrode, and a second drain electrode. | 2011-03-03 |
20110049508 | THIN FILM TRANSISTOR AND METHOD FOR MANUFACTURING THE SAME - In a manufacturing method for thin film transistors, the following procedure is taken: a sacrifice layer comprised of a metal oxide semiconductor is formed over a conductive layer comprised of a metal oxide semiconductor; a metal film is formed over the sacrifice layer; the metal film is processed by dry etching; and the portion of the sacrifice layer exposed by this dry etching is subjected to wet etching. | 2011-03-03 |
20110049509 | THIN FILM TRANSISTOR, DISPLAY DEVICE USING THIN FILM TRANSISTOR, AND PRODUCTION METHOD OF THIN FILM TRANSISTOR - Provided is a thin film transistor including: a first gate electrode; a first gate insulating layer covering the first gate electrode; a semiconductor layer on the first gate insulating layer; a second gate insulating layer on the semiconductor layer; a second gate electrode on the second gate insulating layer; and a drain electrode and a source electrode electrically connected to the semiconductor layer, in which: the semiconductor layer is an amorphous oxide semiconductor containing at least one of Zn, Ga, In, and Sn; the first gate electrode shields light entering the semiconductor layer from below, and the second gate electrode shields light entering the semiconductor layer from above; and the second gate electrode is electrically connected to the first gate electrode by penetrating the first gate insulating layer and the second gate insulating layer, to thereby shield light entering the semiconductor layer from at least one of sides thereof. | 2011-03-03 |
20110049510 | DISPLAY DEVICE AND METHOD FOR MANUFACTURING THE SAME - An object is to provide a display device with excellent display characteristics, where a pixel circuit and a driver circuit provided over one substrate are formed using transistors which have different structures corresponding to characteristics of the respective circuits. The driver circuit portion includes a driver circuit transistor in which a gate electrode layer, a source electrode layer, and a drain electrode layer are formed using a metal film, and a channel layer is formed using an oxide semiconductor. The pixel portion includes a pixel transistor in which a gate electrode layer, a source electrode layer, and a drain electrode layer are formed using an oxide conductor, and a semiconductor layer is formed using an oxide semiconductor. The pixel transistor is formed using a light-transmitting material, and thus, a display device with higher aperture ratio can be manufactured. | 2011-03-03 |
20110049511 | FIELD EFFECT TRANSISTOR, SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE MANUFACTURING METHOD - A field effect transistor including a source electrode | 2011-03-03 |
20110049512 | METHOD FOR DEVELOPING THIN FILM FROM OXIDE OR SILICATE OF HAFNIUM NITRIDE, COORDINATION COMPOUND USED IN SAID METHOD, AND METHOD FOR PRODUCING INTEGRATED ELECTRONIC CIRCUIT - The invention provides a method for developing a thin film from oxide or silicate of hafnium nitride, and also provides asymmetric guanidinate coordinate compounds. The invention furthermore provides a method for producing an electronic circuit that includes a step for developing a thin film from oxide or silicate of hafnium nitride through the method of the invention. The method for developing a thin film from hafnium nitride oxide or hafnium nitride silicate according to the invention involves generating the gas phase by heating at least one coordinate compound from the following formula (I): Hf(NR | 2011-03-03 |
20110049513 | SEMICONDUCTOR DEVICE HAVING MULTILAYER WIRING STRUCTURE AND METHOD OF FABRICATING THE SAME - According to one embodiment, a semiconductor device having a multilayer wiring structure includes a function block and a test pad. The function block contains a DFT circuit. The test pad is formed in an intermediate wiring layer, and connected to the DFT circuit of the function block. A functional operation test of the function block is executed by using the test pad. | 2011-03-03 |
20110049514 | TCP TYPE SEMICONDUCTOR DEVICE - A TCP type semiconductor device includes a base film; a semiconductor chip mounted on the base film; and a plurality of leads formed on the base film and electrically connected with the semiconductor chip. Each of the plurality of leads has an external terminal portion exposed externally. The external terminal portion of the each lead includes: a first portion having a first thickness; and a second portion having a second thickness which is thinner than the first thickness. The first portion and the second portion are arranged to oppose to each other between adjacent two of the plurality of leads. | 2011-03-03 |
20110049515 | CHIP STRUCTURE WITH BUMPS AND TESTING PADS - A chip structure comprising a silicon substrate, a MOS device, dielectric layers, a metallization structure, a passivation layer, a plurality of metal layers and a polymer layer. The metallization structure comprises a first circuit layer and a second circuit layer over the first circuit layer, and comprises a damascene electroplated copper. The passivation layer is over the metallization structure and dielectric layers, the passivation layer including a first opening exposing a contact point of the metallization structure. The polymer layer is disposed over the passivation layer and the first metal layer, a second opening in the polymer layer being over a second contact point of the first metal layer, the polymer layer covering a top surface and sidewall of the first metal layer. The second contact point is connected to the first contact point through the first opening, the second opening not being vertically over the first opening. | 2011-03-03 |
20110049516 | MULTI-PROJECT WAFER AND METHOD OF MAKING SAME - A semiconductor wafer is fabricated. The wafer has a plurality of dies. The plurality of dies include at least operable dies of a first type and operable dies of a second type different from the first type. The dies of the second type are rendered inoperable, while keeping the dies of the first type operable. The wafer is provided with the operable dies of the first type and the inoperable dies of the second type on it, for testing of the dies of the first type. | 2011-03-03 |
20110049517 | BIPOLAR TRANSISTOR - A bipolar transistor has a collector having a base layer provided thereon and a shallow trench isolation structure formed therein. A base poly layer is provided on the shallow trench isolation structure. The shallow trench isolation structure defines a step such that a surface of the collector projects from the shallow trench isolation structure adjacent the collector. | 2011-03-03 |
20110049518 | SEMICONDUCTOR DEVICE INCLUDING A TRANSISTOR, AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE - An object is to prevent contamination of a semiconductor film in a transistor or a semiconductor device including the transistor. Another object is to suppress variation in electrical characteristics and deterioration. A transistor including: a gate electrode layer provided over a substrate; a gate insulating film provided over the gate electrode layer; a semiconductor layer which is provided over the gate insulating film and which overlaps the gate electrode layer; a carbide layer provided over and in contact with a surface of the semiconductor layer; and a source electrode layer and a drain electrode layer which are electrically connected to the semiconductor layer is provided. | 2011-03-03 |
20110049519 | Thin Film Transistor Array Panel and Method of Manufacturing the Same - A thin film transistor array panel includes an insulation substrate. A signal line is formed on the insulation substrate. A thin film transistor is connected to the signal line. A color filter is formed on the substrate. An organic insulator is formed on the color filter and includes a first portion and a second portion having different thicknesses. A light blocking member is formed on the second portion of the organic insulator. A difference between the surface height of the first portion of the organic insulator and the surface height of the second portion of the organic insulator is in the range of about 2.0 μm to 3.0 μm. | 2011-03-03 |
20110049520 | LATTICE MATCHED CRYSTALLINE SUBSTRATES FOR CUBIC NITRIDE SEMICONDUCTOR GR - Disclosed embodiments include methods of fabricating a semiconductor layer or device and devices fabricated thereby. The methods include, but are not limited to, providing a substrate having a cubic crystalline surface with a known lattice parameter and growing a cubic crystalline group III-nitride alloy layer on the cubic crystalline substrate by coincident site lattice matched epitaxy. The cubic crystalline group III-nitride alloy may be prepared to have a lattice parameter (a′) that is related to the lattice parameter of the substrate (a). The group III-nitride alloy may be a cubic crystalline In | 2011-03-03 |
20110049521 | ACTIVE DEVICE ARRAY MOTHER SUBSTRATE AND METHOD OF FABRICATING DISPLAY PANEL - An active device array mother substrate including a substrate, pixel arrays, and a polymer-stabilized alignment curing circuit is provided. The substrate has panel regions, a circuit region, a first cutting line, and a second cutting line. The first cutting line is disposed on the circuit region between an edge of the substrate and the second cutting line. The active devices of the pixel arrays have a semiconductor layer. The polymer-stabilized alignment curing circuit disposed on the circuit region includes curing pads disposed between the edge of the substrate and the first cutting line and curing lines having an upper conductive layer connected to the corresponding curing pads and the corresponding pixel array. The upper conductive layer is in the same layer as the source/drain conductor. Therefore, the curing lines are capable of preventing problems such as peeling, so as to keep the polymer-stabilized alignment curing circuit operating normally. | 2011-03-03 |
20110049522 | SEMICONDUCTOR DISPLAY DEVICE - It is an object of the present invention to provide a semiconductor display device having an interlayer insulating film which can obtain planarity of a surface while controlling film formation time, can control treatment time of heating treatment with an object of removing moisture, and can prevent moisture in the interlayer insulating film from being discharged to a film or an electrode adjacent to the interlayer insulating film. An inorganic insulating film containing nitrogen, which is less likely to transmit moisture compared with an organic resin, is formed so as to cover a TFT. Next, an organic resin film containing photosensitive acrylic resin is applied to the organic insulting film, and the organic resin film is partially exposed to light to be opened. Thereafter, an inorganic insulting film containing nitrogen, which is less likely to transmit moisture compared with an organic resin, is formed so as to cover the opened organic resin film. Then, in the opening part of the organic resin film, a gate insulating film and the two layer inorganic insulating film containing nitrogen are opened partially is by etching to expose an active layer of the TFT. | 2011-03-03 |
20110049523 | Organic light emitting diode display and method of manufacturing the same - An OLED display including a substrate main body; a first gate electrode and a second semiconductor layer; a gate insulating layer on the first gate electrode and the second semiconductor layer; a first semiconductor layer and a second gate electrode overlying the first gate electrode and the second semiconductor layer, respectively; etching stopper layers contacting portions of the first semiconductor layer; an interlayer insulating layer on the first semiconductor layer and the second gate electrode and including contact holes exposing the plurality of etching stopper layers, respectively; a first source electrode and a first drain electrode on the interlayer insulating layer and the contact holes being indirectly connected to the first semiconductor layer via the etching stopper layers or directly connected to the first semiconductor layer; and a second source electrode and a second drain electrode on the interlayer insulating layer being connected to the second semiconductor layer. | 2011-03-03 |
20110049524 | DISPLAY DEVICE AND MANUFACTURING METHOD THEREOF - Provided is a display device including a thin-film transistor and a capacitor element, the thin-film transistor includes: a first insulating film (IN | 2011-03-03 |
20110049525 | ACTIVE MATRIX SUBSTRATE, DISPLAY DEVICE, TELEVISION APPARATUS, MANUFACTURING METHOD OF AN ACTIVE MATRIX SUBSTRATE, AND MANUFACTURING METHOD OF A DISPLAY DEVICE - An active matrix substrate includes: a plurality of pixel electrodes arranged in a matrix pattern and each forming a pixel; a plurality of gate lines each provided between the corresponding pixel electrodes and extending in parallel with each other; a plurality of first source lines each provided between the corresponding pixel electrodes and extending in a direction crossing an extending direction of the gate lines; a plurality of TFTs provided corresponding to the respective pixel electrodes and connected to the respective pixel electrodes, the respective gate lines, and the respective first source lines; a plurality of capacitor lines each provided between the corresponding gate lines and extending in parallel with each other; and a plurality of second source lines each provided between the corresponding pixel electrodes and extending in parallel with the first source lines. | 2011-03-03 |
20110049526 | Semiconductor Devices with Field Plates - A III-N device is described with a III-N material layer, an insulator layer on a surface of the III-N material layer, an etch stop layer on an opposite side of the insulator layer from the III-N material layer, and an electrode defining layer on an opposite side of the etch stop layer from the etch stop layer from the insulator layer. A recess is formed in the electrode defining layer. An electrode is formed in the recess. The insulator can have a precisely controlled thickness, particularly between the electrode and III-N material layer. | 2011-03-03 |
20110049527 | SEMICONDUCTOR DEVICE - A semiconductor device comprising: an active layer, which has a composition represented by the formula: Al | 2011-03-03 |
20110049528 | METHODS FOR FABRICATING COMPOUND MATERIAL WAFERS - Reconditioned donor substrates that include a remainder substrate from a donor substrate wherein the remainder substrate has a detachment surface where a transfer layer was detached and an opposite surface; and an additional layer deposited upon the opposite surface of the remainder substrate to increase its thickness and to form the reconditioned substrate. The reconditioned substrate is recycled as a donor substrate for fabricating compound material wafers and is typically made from gallium nitride donor substrates. | 2011-03-03 |
20110049529 | GaN-BASED SEMICONDUCTOR ELEMENT AND METHOD OF MANUFACTURING THE SAME - Provided is a GaN series semiconductor element, which is capable of obtaining an adequate normally-off characteristic, and a manufacturing method thereof. | 2011-03-03 |
20110049530 | TRANSISTORS WITH A GATE INSULATION LAYER HAVING A CHANNEL DEPLETING INTERFACIAL CHARGE AND RELATED FABRICATION METHODS - A metal-insulator-semiconductor field-effect transistor (MISFET) includes a SiC layer with source and drain regions of a first conductivity type spaced apart therein. A first gate insulation layer is on the SiC layer and has a net charge along an interface with the SiC layer that is the same polarity as majority carriers of the source region. A gate contact is on the first gate insulation layer over a channel region of the SiC layer between the source and drain regions. The net charge along the interface between the first gate insulation layer and the SiC layer may deplete majority carriers from an adjacent portion of the channel region between the source and drain regions in the SiC layer, which may increase the threshold voltage of the MISFET and/or increase the electron mobility therein. | 2011-03-03 |
20110049531 | POWER SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD FOR THE SAME - Provided is a power semiconductor device including: an insulating substrate; a circuit pattern formed on an upper surface of the insulating substrate; a power semiconductor formed on the circuit pattern; a plurality of metal socket electrode terminals formed perpendicularly to the circuit pattern or the power semiconductor so as to be in conduction with external terminals; an integral resin sleeve in which a plurality of sleeve parts are integrated, the plurality of sleeve parts being fitted with the plurality of metal socket electrode terminals from above the plurality of metal socket electrode terminals and having openings at both ends thereof; and a molding resin covering the insulating substrate, the circuit pattern, the power semiconductor, the electrode terminals, and the integral resin sleeve. | 2011-03-03 |
20110049532 | SILICON CARBIDE DUAL-MESA STATIC INDUCTION TRANSISTOR - A dual-mesa static induction transistor (SIT) structure includes a silicon carbide substrate having a layer arrangement formed thereon. Laterally spaced ion implanted gate regions are defined in the layer arrangement. Source regions are defined in the layer arrangement. Each of the source regions can include a channel mesa having a source mesa disposed thereon. The source mesa includes sidewalls relative to a principal plane of the substrate defining a horizontal dimension thereof. The channel mesa includes slanted sidewalls relative to the source mesa and the principal plane of the substrate. Also disclosed is a method of fabricating a dual-mesa SiC transistor device. The method includes implanting ions at a normal relative to a principal plane of the substrate to form gate junctions in upper portions of the substrate and lateral portions of the slanted channel mesas. | 2011-03-03 |
20110049533 | SEMICONDUCTOR DEVICE AND PRODUCTION METHOD THEREOF - A method of fabricating a semiconductor device is disclosed that is able to suppress a short channel effect and improve carrier mobility. In the method, trenches are formed in a silicon substrate corresponding to a source region and a drain region. When epitaxially growing p-type semiconductor mixed crystal layers to fill up the trenches, the surfaces of the trenches are demarcated by facets, and extended portions of the semiconductor mixed crystal layers are formed between bottom surfaces of second side wall insulating films and a surface of the silicon substrate, and extended portion are in contact with a source extension region and a drain extension region. | 2011-03-03 |
20110049534 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME - In a semiconductor device and a method of manufacturing the same, a first insulation layer is removed from a cell area of a substrate and a first active pattern is formed on the first area by a laser-induced epitaxial growth (LEG) process. Residuals of the first insulation layer are passively formed into a first device isolation pattern on the first area. The first insulation layer is removed from the second area of the substrate and a semiconductor layer is formed on the second area of the substrate by a SEG process. The semiconductor layer on the second area is patterned into a second active pattern including a recessed portion and a second insulation pattern in the recessed portion is formed into a second device isolation pattern on the second area. Accordingly, grain defects in the LEG process and lattice defects in the SEG process are mitigated or eliminated. | 2011-03-03 |
20110049535 | SEMICONDUCTOR APPARATUS - A semiconductor apparatus includes a first stacked body including a first radiator plate, a first insulating layer, a first conductive layer and a first semiconductor element in this order; a second stacked body including a second radiator plate, a second insulating layer, a second conductive layer and a second semiconductor element in this order and configured to be made of a semiconductor material different from that of the first semiconductor element; and a connecting part configured to electrically connect the first conductive layer and the second conductive layer, wherein the first stacked body and the second stacked body are thermally insulated. | 2011-03-03 |
20110049536 | LIGHT EMITTING DIODE PACKAGE AND METHOD FOR MANUFACTURING SAME - An exemplary light emitting diode package includes a housing, and a light emitting unit received in the housing. The light emitting unit includes a first carbon nanotube layer, a plurality of spaced light emitting chips, and a second carbon nanotube layer. The light emitting chips are formed on the first carbon nanotube layer. The second carbon nanotube layer covers the light emitting chips. | 2011-03-03 |
20110049537 | LIGHT EMITTING DEVICE AND LIGHT EMITTING DEVICE PACKAGE HAVING THE SAME - Disclosed are a light emitting device and a light emitting device package having the same. The light emitting device includes a plurality of light emitting cells including a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer; a first electrode layer connected to the first conductive semiconductor layer of a first light emitting cell of the plural light emitting cells; a plurality of second electrode layers under the light emitting cells, a portion of the second electrode layers being connected to the first conductive semiconductor layer of an adjacent light emitting cells; a third electrode layer disposed under a last light emitting cell of the plural light emitting cells; a first electrode connected to the first electrode layer; a second electrode connected to the third electrode layer; an insulating layer around the first to third electrode layers; and a support member under the insulating layer. | 2011-03-03 |
20110049538 | FLIP CHIP LED DIE AND ARRAY THEREOF - A flip chip LED die is provided and includes a first type doped layer, a second type doped layer, a first electrode layer, a second electrode layer and an insulation layer. The second type doped layer is disposed under the first type doped layer. The first electrode layer is disposed under the first type doped layer without contacting the second type doped layer. The first electrode layer has an exposed area for directly coating an electrically conductive adhesive thereon. The second metal/electrode layer is disposed under the second type doped layer, and also has an exposed area for directly coating the electrically conductive adhesive thereon. The insulation layer is disposed between the first electrode layer and the second electrode layer for electrically insulating and supporting the first electrode layer and the second electrode layer. | 2011-03-03 |
20110049539 | Light-Emitting Diode With High Color-Rendering Index - A light-emitting diode (LED) with high color-rendering index includes a substrate being provided on one face with a plurality of recesses; a plurality of first chips being separately disposed in the recesses and adapted to emit blue light; a plurality of fluorescent glues being separately filled in the recesses; at least one second chip being disposed on the substrate at a predetermined position to electrically connect to the first chips, and adapted to emit red light; and a light-transmittable layer provided on the substrate to protectively cover the first chips, the fluorescent glues, and the second chip. The blue light emitted from the first chips and the yellow or green light from the fluorescent glues are mixed first, and the produced light is then further mixed with the red light emitted from the second chip to produce warm white light, which is then projected through the light-transmittable layer. | 2011-03-03 |
20110049540 | METHOD FOR FABRICATING ROBUST LIGHT-EMITTING DIODES - One embodiment of the present invention provides a method for fabricating light-emitting diodes (LEDs). The method includes fabricating an InGaAlN-based multilayer LED structure on a conductive substrate. The method further includes etching grooves of a predetermined pattern through the active region of the multilayer LED structure. The grooves separate a light-emitting region from non-light-emitting regions. In addition, the method includes depositing electrode material on the light-emitting and non-light-emitting regions, thereby creating an electrode. Furthermore, the method includes depositing a passivation layer covering the light-emitting and non-light-emitting regions. Moreover, the method includes removing the passivation layer on the electrode to allow the non-light-emitting regions which are covered with the electrode material and the passivation layer to be higher than the light-emitting region and the electrode, thereby protecting the light-emitting region from contact with test equipment. | 2011-03-03 |
20110049541 | SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD FOR MANUFACTURING SAME - A semiconductor light emitting device, includes: a stacked structural unit including a first semiconductor layer of a first conductivity type, a second semiconductor layer of a second conductivity type, and a light emitting layer provided therebetween; and an electrode including a first and second metal layers, the first metal layer including silver or silver alloy and being provided on a side of the second semiconductor layer opposite to the light emitting layer, the second metal layer including at least one element selected from gold, platinum, palladium, rhodium, iridium, ruthenium, and osmium and being provided on a side of the first metal layer opposite to the second semiconductor layer. A concentration of the element in a region including an interface between the first and second semiconductor layers is higher than that of the element in a region of the first metal layer distal to the interface. | 2011-03-03 |
20110049542 | AlxGa(1-x)As Substrate, Epitaxial Wafer for Infrared LEDs, Infrared LED, Method of Manufacturing AlxGa(1-x)As Substrate, Method of Manufacturing Epitaxial Wafer for Infrared LEDs, and Method of Manufacturing Infrared LEDs - The present invention makes available Al | 2011-03-03 |
20110049543 | LIGHT-EMITTING DEVICE AND MANUFACTURING METHOD THEROF - Provides is a semiconductor light-emitting device. The semiconductor light-emitting device includes a first conduction-type cladding layer, an active layer, and a second conduction-type cladding layer, on a substrate. Portions of the substrate and the first conduction-type cladding layer are removed. According to the light-emitting device having the above-construction, damage to a grown epitaxial layer is reduced, and a size of an active layer increases, so that a light-emission efficiency increases. Even when a size of a light-emitting device is small, a short-circuit occurring between electrodes can be prevented. Further, brightness and reliability of the light-emitting device are improved. | 2011-03-03 |
20110049544 | NITRIDE SEMICONDUCTOR ELEMENT, METHODS FOR MANUFACTURING NITRIDE SEMICONDUCTOR ELEMENT AND NITRIDE SEMICONDUCTOR LAYER, AND NITRIDE SEMICONDUCTOR LIGHT-EMITTING ELEMENT - Described herein is a method for manufacturing a nitride semiconductor layer by stacking, on a silicon nitride layer, the first nitride semiconductor layer having a surface inclined with respect to the surface of the silicon nitride layer and then stacking the second nitride semiconductor layer on the first nitride semiconductor layer, a nitride semiconductor element and a nitride semiconductor light-emitting element each including the nitride semiconductor layer; and a method for manufacturing the nitride semiconductor element. | 2011-03-03 |
20110049545 | LED PACKAGE WITH PHOSPHOR PLATE AND REFLECTIVE SUBSTRATE - After flip chip LEDs are mounted on a submount wafer and their growth substrates removed, a phosphor plate is affixed to the exposed top surface of each LED. A reflective material, such as silicone containing at least 5% TiO | 2011-03-03 |
20110049546 | HIGH REFLECTIVITY MIRRORS AND METHOD FOR MAKING SAME - A composite high reflectivity mirror (CHRM) with at least one relatively smooth interior surface interface. The CHRM includes a composite portion, for example dielectric and metal layers, on a base element. At least one of the internal surfaces is polished to achieve a smooth interface. The polish can be performed on the surface of the base element, on various layers of the composite portion, or both. The resulting smooth interface(s) reflect more of the incident light in an intended direction. The CHRMs may be integrated into light emitting diode (LED) devices to increase optical output efficiency. | 2011-03-03 |
20110049547 | FABRICATING METHOD AND STRUCTURE OF A WAFER LEVEL MODULE - A fabricating method and structure form a wafer level module with a solid adhesive film. A first solid adhesive film includes a first release film and a second release film that respectively cover a first surface and a second surface of the first solid adhesive film. Openings are patterned through the first solid adhesive film. After removing parts of the first release film to expose the first surface of the first solid adhesive film, the exposed first surface of the first solid adhesive film is aligned and adhered to a first substrate. | 2011-03-03 |
20110049548 | Patterning method of metal oxide thin film using nanoimprinting, and manufacturing method of light emitting diode - A method for forming a metal oxide thin film pattern using nanoimprinting according to one embodiment of the present invention includes: coating a photosensitive metal-organic material precursor solution on a substrate; pressurizing the photosensitive metal-organic material precursor coating layer to a mold patterned to have a protrusion and depression structure; forming the metal oxide thin film pattern by irradiating ultraviolet rays to the pressurized photosensitive metal-organic material precursor coating layer to cure it; and removing the patterned mold from the metal oxide thin film pattern. | 2011-03-03 |
20110049549 | Light emitting devices and methods of manufacturing the same - Light emitting devices and methods of manufacturing the light emitting devices. The light emitting devices include a silicon substrate; a metal buffer layer on the silicon substrate, a patterned dispersion Bragg reflection (DBR) layer on the metal buffer layer; and a nitride-based thin film layer on the patterned DBR layer and regions between patterns of the DBR layer. | 2011-03-03 |
20110049550 | SEMICONDUCTOR LIGHT EMITTING ELEMENT AND SEMICONDUCTOR LIGHT EMITTING DEVICE - A semiconductor light emitting element, includes: a laminated structure body including an n-type semiconductor layer, a p-type semiconductor layer, and a light emitting layer; a p-side electrode provided in contact with the p-type semiconductor layer; an n-side electrode provided in contact with the n-type semiconductor layer; a highly reflective insulating layer provided in contact with the n-type semiconductor layer and having a higher reflectance than a reflectance of the n-side electrode; and an upper metal layer provided on at least a part of the n-side electrode and on at least a part of the highly reflective insulating layer and electrically connected to the n-side electrode. An area of a region of the n-side electrode in contact with the n-type semiconductor layer is smaller than an area of a region of the highly reflective insulating layer sandwiched between the n-type semiconductor layer and the upper metal layer. | 2011-03-03 |
20110049551 | Illuminating Device - A lighting device ( | 2011-03-03 |
20110049552 | LIGHT EMITTING DIODE PACKAGE - There is provided a light emitting diode (LED) package. The LED package includes A light emitting diode (LED) package includes a pair of lead frames connected with at least one LED chip through a metal wire, a package body integrally fixed with the lead frames and having a cavity having an open top, a lead frame bent downwardly to a lower part of an external mounting surface of the package body, a light-transmissive, transparent resin covering the LED chip and filling the cavity, a recess formed in a bottom surface of the cavity, in which the LED chip is mounted, and a transparent resin including a fluorescent material formed in the recess and the cavity. Accordingly, the amount of light-transmissive, transparent resin filling the cavity is reduced to save on manufacturing costs, and the height of the resin is lowered to improve the luminance of light. Also, the height of the package body is lowered, contributing to manufacturing a small product. | 2011-03-03 |
20110049553 | LIGHT EMITTING DEVICE PACKAGE - A light emitting device package is provided. The light emitting device package includes a substrate including a first cavity having a first depth and a lateral surface inclined with respect to a bottom surface and a second cavity having a second depth recessed from the bottom surface of the first cavity and a lateral surface perpendicular to the bottom surface of the first cavity, a first electrode layer and a second electrode layer on the substrate, and a light emitting diode within the second cavity, the light emitting diode being electrically connected to the first and second electrode layers. | 2011-03-03 |
20110049554 | PACKAGE BASE STRUCTURE AND MANUFACTURING METHOD THEREOF - A package base structure for packaging a light-emitting element and a related manufacturing process are provided. The package base structure includes a semiconductor substrate having a top surface, a receiving space in the top surface and defined by slant surfaces, and a micro diffractive optical element on one of the slant surfaces. To produce the package base structure, a first etching mask with a first etching window is formed on the top surface. The etching window has a sidewall oriented at a bias angle with respect to a specific equivalent crystallographic orientation of the semiconductor substrate. Then, a selective anisotropic etching procedure is performed through the first etching window to form the slant surfaces on the semiconductor substrate. Afterwards, the micro diffractive optical element is formed on the slant surface for collimating or focusing a light beam emitted from the light-emitting element. | 2011-03-03 |
20110049555 | Optoelectronic Semiconductor Chip and Method for Producing Same - An optoelectronic semiconductor chip has a semiconductor layer sequence having an active layer that generates radiation between a layer of a first conductivity type and a layer of a second conductivity type. The layer of the first conductivity type is adjacent to a front side of the semiconductor layer sequence. The semiconductor layer sequence contains at least one cutout extending from a rear side, lying opposite the front side, of the semiconductor layer sequence through the active layer to the layer of the first conductivity type. The layer of the first conductivity type is electrically connected through the cutout by means of a first electrical connection layer which covers the rear side of the semiconductor layer sequence at least in places. | 2011-03-03 |
20110049556 | SEMICONDUCTOR LIGHT-EMITTING DEVICE AND PROCESS FOR PRODUCTION THEREOF - The present invention provides a semiconductor light-emitting device capable of keeping high luminance intensity even if electric power increases, and hence the device is suitable for lighting instruments such as lights and lamps. This semiconductor device comprises a metal electrode layer provided with openings, and is so large in size that the electrode layer has, for example, an area of 1 mm | 2011-03-03 |
20110049557 | OPTICAL DEVICE AND METHOD OF MANUFACTURING THE SAME - An optical device having following components is disclosed. A semiconductor substrate has an element region formed on its upper side. A light transmitting insulator film covers an element region and has at least one recessed portion located in a region outside the element region. At least one protruding portion is provided in a region on the light transmitting insulator film outside the element region and inside the recessed portion. A light transmitting member covers the element region from above and is provided on the protruding portion. A light transmitting adhesive is filled in between the light transmitting insulator film and the light transmitting member. | 2011-03-03 |
20110049558 | SEMICONDUCTOR CHIP ASSEMBLY WITH POST/BASE HEAT SPREADER, SIGNAL POST AND CAVITY - A semiconductor chip assembly includes a semiconductor device, a heat spreader, a conductive trace and an adhesive. The heat spreader includes a thermal post and a base. The conductive trace includes a pad, a terminal and a signal post. The semiconductor device extends into a cavity in the thermal post, is electrically connected to the conductive trace and is thermally connected to the heat spreader. The thermal post extends upwardly from the base into a first opening in the adhesive, and the signal post extends upwardly from the terminal into a second opening in the adhesive. The conductive trace is located outside the cavity and provides signal routing between the pad and the terminal. | 2011-03-03 |
20110049559 | LIGHT-EMITTING DIODE LAMP WITH LOW THERMAL RESISTANCE - A light-emitting diode (LED) structure with an improved heat transfer path with a lower thermal resistance than conventional LED lamps is provided. For some embodiments, a surface-mountable light-emitting diode structure is provided having an active layer deposited on a metal substrate directly bonded to a metal plate that is substantially exposed for low thermal resistance by positioning it on the bottom of the light-emitting diode structure. This metal plate can then be soldered to a printed circuit board (PCB) that includes a heat sink. For some embodiments of the invention, the metal plate is thermally and electrically conductively connected through several heat conduction layers to a large heat sink that may be included in the structure. | 2011-03-03 |
20110049560 | COMPOSITIONS AND METHODS FOR GENERATING WHITE LIGHT - Crystalline inorganic-organic hybrid structures having a plurality of layers of a repeating unit characterized by a first organic ligand layer, a second organic ligand layer, and a two-dimensional semiconducting inorganic double layer having two opposing surfaces therebetween, wherein the two-dimentional semiconducting inorganic double layer is characterized by two single atom thick layers of a II-chalcogenide compound; and the first organic ligand layer and the second organic ligand layer are attached to the two opposing surfaces of the two-dimensional semiconducting inorganic double layer through a covalent bond or a coordinate covalent bond between the compounds of the organic ligand layers and the metal cation species of the II-VI chalcogenide compounds, so that the semiconducting inorganic double layer is directed by the compounds of the two opposing organic layers to form ordered crystal lattices. Methods for the preparation of the hybrid structures are also disclosed. | 2011-03-03 |
20110049561 | Solid-State Pinch Off Thyristor Circuits - Provided is a semiconductor bistable switching device that includes a thyristor portion including an anode layer, a drift layer, a gate layer and a cathode layer, the gate layer operable to receive a gate trigger current that, when the anode layer is positively biased relative to the cathode layer, causes the thyristor portion to latch into a conducting mode between the anode and the cathode. The device also includes a transistor portion formed on the thyristor portion, the transistor portion including a source, a drain and a transistor gate, the drain coupled to the cathode of the thyristor portion. | 2011-03-03 |
20110049562 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - A semiconductor device comprises: a semiconductor substrate; a plurality of IGBT cells on the semiconductor substrate, each of the IGBT cells including a gate electrode and a first emitter electrode; a first gate wiring on the substrate and being connected to the gate electrode; an interlayer insulating film covering the first emitter electrode and the first gate wiring; and a second emitter electrode on the interlayer insulating film and being connected to the first emitter electrode through an opening of the interlayer insulating film, wherein the second emitter electrode extends above the first gate wiring via the interlayer insulating film. | 2011-03-03 |
20110049563 | MOS GATE POWER SEMICONDUCTOR DEVICE - A MOS-gate power semiconductor device is provided which includes: one or more P-type wells formed under one or more of a gate metal electrode and a gate bus line and electrically connected to an emitter metal electrode; and one or more N-type wells formed in the P-type well and electrically connected to one or more of the gate metal electrode and the gate bus line. According to this configuration, it is possible to suppress deterioration and/or destruction of a device due to an overcurrent. | 2011-03-03 |
20110049564 | Integrated schottky diode in high voltage semiconductor device - This invention discloses a method for manufacturing a semiconductor power device in a semiconductor substrate comprises an active cell area and a termination area. The method comprises the steps of a) growing and patterning a field oxide layer in the termination area and also in the active cell area on a top surface of the semiconductor substrate b) depositing and patterning a polysilicon layer on the top surface of the semiconductor substrate at a gap distance away from the field oxide layer; c) performing a blank body dopant implant to form body dopant regions in the semiconductor substrate substantially aligned with the gap area followed by diffusing the body dopant regions into body regions in the semiconductor substrate; d) implanting high concentration body-dopant regions encompassed in and having a higher dopant concentration than the body regions and e) applying a source mask to implant source regions having a conductivity opposite to the body region with the source regions encompassed in the body regions and surrounded by the high concentration body-dopant regions. | 2011-03-03 |
20110049565 | OPTOELECTRONIC DEVICE AND PROCESS FOR MAKING SAME - The present invention discloses an optoelectronic device, comprising: a substrate made of a first material; a region in the substrate, the region being made of a second material different from the first material; and a photo diode formed in the region by ion implantation. The second material for example is silicon germanium (Si1-xGex) or silicon carbide (Si1-yCy), wherein 02011-03-03 | |
20110049566 | Dual Band Photodetector - A dual band photodetector for detecting infrared and ultraviolet optical signals is disclosed. Aspects include homojunction and heterojunction detectors comprised of one or more of GaN, AlGaN, and InGaN. In one aspect ultraviolet/infrared dual-band detector is disclosed that is configured to simultaneously detect UV and IR. | 2011-03-03 |
20110049567 | BOTTLE-NECK RECESS IN A SEMICONDUCTOR DEVICE - The present disclosure provides a method for fabricating a semiconductor device that includes providing a silicon substrate, forming a gate stack over the silicon substrate, performing a biased dry etching process to the substrate to remove a portion of the silicon substrate, thereby forming a recess region in the silicon substrate, performing a non-biased etching process to the recess region in the silicon substrate, thereby forming a bottle-neck shaped recess region in the silicon substrate, and epi-growing a semiconductor material in the bottle-neck shaped recess region in the silicon substrate. An embodiment may include a biased dry etching process including adding HeO2 gas and HBr gas. An embodiment may include performing a first biased dry etching process including N2 gas and performing a second biased dry etching process not including N2 gas. An embodiment may include performing an oxidation process to the recess region in the silicon substrate by adding oxygen gas to form silicon oxide on a portion of the recess region in the silicon substrate. As such, these processes form polymer protection to help form the bottle-neck shaped recess. | 2011-03-03 |
20110049568 | Lattice-Mismatched Semiconductor Structures with Reduced Dislocation Defect Densities and Related Methods for Device Fabrication - Fabrication of monolithic lattice-mismatched semiconductor heterostructures with limited area regions having upper portions substantially exhausted of threading dislocations, as well as fabrication of semiconductor devices based on such lattice-mismatched heterostructures. | 2011-03-03 |
20110049569 | Semiconductor structure including a field modulation body and method for fabricating same - According to one embodiment, a semiconductor structure including an equipotential field modulation body comprises a trench surrounding an active region of a group III-V power device fabricated in the semiconductor structure, and the equipotential field modulation body formed in the trench and extending over a portion of the active region. The equipotential field modulation body is electrically coupled to a terminal of the group III-V power device. In one embodiment, a method for fabricating a semiconductor structure including an equipotential field modulation body comprises fabricating a trench surrounding an active region of the semiconductor structure, forming the equipotential field modulation body in the trench, the equipotential field modulation body extending over a portion of the active region, and electrically coupling the equipotential field modulation body to a terminal of a group III-V power device fabricated in the active region. | 2011-03-03 |