09th week of 2010 patent applcation highlights part 9 |
Patent application number | Title | Published |
20100051898 | QUANTUM DOT-WAVELENGTH CONVERTER, MANUFACTURING METHOD OF THE SAME AND LIGHT EMITTING DEVICE INCLUDING THE SAME - There is provided a quantum dot wavelength converter including a quantum dot, which is optically stable without any change in an emission wavelength and improved in emission capability. The quantum dot wavelength converter includes: a wavelength converting part including a quantum dot wavelength-converting excitation light and generating a wavelength-converted light and a dispersive medium dispersing the quantum dot; and a sealer sealing the wavelength converting part. | 2010-03-04 |
20100051899 | Method of manufacturing nanowire, method of manufacturing a semiconductor apparatus including nanowire and semiconductor apparatus formed from the same - A method of manufacturing a nanowire, a method of manufacturing a semiconductor apparatus including a nanowire and a semiconductor apparatus formed from the same are provided. The method of manufacturing a semiconductor apparatus may include forming a material layer pattern on a substrate, forming a first insulating layer on the material layer pattern, a first nanowire forming layer and a top insulating layer on the substrate, wherein a total depth of the first insulating layer and the first nanowire forming layer may be formed to be smaller than a depth of the material layer pattern, sequentially polishing the top insulating layer, the first nanowire forming layer and the first insulating layer so that the material layer pattern is exposed, exposing part of the first nanowire forming layer to form an exposed region and forming a single crystalline nanowire on an exposed region of the first nanowire forming layer. | 2010-03-04 |
20100051900 | MISFIT DISLOCATION FORMING INTERFACIAL SELF-ASSEMBLY FOR GROWTH OF HIGHLY-MISMATCHED III-SB ALLOYS - Exemplary embodiments provide high-quality layered semiconductor devices and methods for their fabrication. The high-quality layered semiconductor device can be formed in planar with low defect densities and with strain relieved through a plurality of arrays of misfit dislocations formed at the interface of highly lattice-mismatched layers of the device. The high-quality layered semiconductor device can be formed using various materials systems and can be incorporated into various opto-electronic and electronic devices. In an exemplary embodiment, an emitter device can include monolithic quantum well (QW) lasers directly disposed on a SOI or silicon substrate for waveguide coupled integration. In another exemplary embodiment, a superlattice (SL) photodetector and its focal plane array can include a III-Sb active region formed over a large GaAs substrate using SLS technologies. | 2010-03-04 |
20100051901 | Light emitting devices and displays with improved performance - Light emitting devices and devices with improved performance are disclosed. In one embodiment, a light emitting device includes an emissive material disposed between a first electrode, and a second electrode, wherein the emissive material comprises semiconductor nanocrystals capable of emitting light including a maximum peak emission in the blue region of the spectrum upon excitation, wherein the light emitting device can have a peak external quantum efficiency of at least about 1.0 percent. Also disclosed is a display including at least one light emitting device including an emissive material disposed between a first electrode, and a second electrode, wherein the at least one light emitting device can have a peak external quantum efficiency of at least about 1.0 percent. In another embodiment, a light emitting device includes an emissive material disposed between a first electrode and a second electrode. The emissive material comprises semiconductor nanocrystals capable of emitting light including a maximum peak emission in the blue region of the spectrum upon excitation. The device further includes a first spacer material disposed between the emissive material and the first electrode. In certain embodiments, the device further includes a first material capable of transporting charge disposed between the emissive material and the first electrode, wherein the first spacer material is disposed between the emissive material and the first electrode. In certain embodiments, for example, light emitting devices can have a maximum peak emission in a range from about 380 nm to about 500 nm. In certain embodiments, the light emitting device can have a maximum peak emission peak in the range from about 450 nm to about 490 nm. Displays including light emitting devices are also disclosed. | 2010-03-04 |
20100051902 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME - A semiconductor device has a structure in which a light-emitting layer of an organic material or the like is sandwiched between a work function controlled single-wall carbon nanotube cathode encapsulating a donor having a low ionization potential and a work function controlled single-wall carbon nanotube anode encapsulating an acceptor having a high electron affinity. A semiconductor device represented by an organic field-effect light-emitting element and a method of manufacturing the same are provided. The semiconductor device and the method of manufacturing the same make it possible to improve characteristics and performance, such as reduction in light-emission starting voltage and a high luminous efficiency, to improve reliability, such as an increase in life, and to improve productivity, such as reduction in manufacturing cost. | 2010-03-04 |
20100051903 | METHOD OF ALIGNING NANORODS AND RELATED COMPOSITIONS - A method of forming an array of nanorods on a crystalline substrate includes heating a composition that includes the crystalline substrate, a nanorod precursor, and a surfactant. The surfactant is capable of associating with the surface of the nanorods. The resulting nanostructures formed from the methods may be used in a variety of devices, including dye-sensitizing solar cell devices. | 2010-03-04 |
20100051904 | Dual-Level Self-Assembled Patterning Method and Apparatus Fabricated Using the Method - A method of fabricating a device includes: providing a substrate having a patterned surface, depositing a first-level self-assembled material on at least a portion of the patterned surface, wherein the position and/or orientation of the first-level self-assembled material is directed by the patterned surface, to form a first nanostructure pattern, and depositing a second-level self-assembled material on at least a portion of the first nanostructure pattern to form an array of nanostructures of the second-level self-assembled material. An apparatus fabricated using the method is also provided. | 2010-03-04 |
20100051905 | MOISTURE DETECTOR, BIOLOGICAL BODY MOISTURE DETECTOR, NATURAL PRODUCT MOISTURE DETECTOR, AND PRODUCT/MATERIAL MOISTURE DETECTOR - A moisture detector includes a light-receiving element including an absorption layer having a pn-junction, or an array of the light-receiving elements, wherein the absorption layer has a multiquantum well structure composed of a Group III-V semiconductor, the pn-junction is formed by selectively diffusing an impurity element into the absorption layer, and the concentration of the impurity in the absorption layer is 5×10 | 2010-03-04 |
20100051906 | SEMICONDUCTOR DEVICE - A semiconductor device for correcting an input signal and outputting a corrected signal are provided. The semiconductor device includes a semiconductor layer, a plurality of first conductors formed on one of faces of the semiconductor layer and serving as input terminals to which a signal is input, second conductors of the number larger than that of the first conductors at density higher than that of the first conductors, formed on the other face of the semiconductor layer, a high impurity concentration region provided on the semiconductor layer side of an interface between the second conductor and the semiconductor layer, an insulating layer formed on the other face, and a plurality of third conductors formed on the insulating layer and serving as output terminals for outputting the processed signal. | 2010-03-04 |
20100051907 | Devices including graphene layers epitaxially grown on single crystal substrates - An electronic device comprises a body including a single crystal region on a major surface of the body. The single crystal region has a hexagonal crystal lattice that is substantially lattice-matched to graphene, and a at least one epitaxial layer of graphene is disposed on the single crystal region. In a currently preferred embodiment, the single crystal region comprises multilayered hexagonal BN. A method of making such an electronic device comprises the steps of: (a) providing a body including a single crystal region on a major surface of the body. The single crystal region has a hexagonal crystal lattice that is substantially lattice-matched to graphene, and (b) epitaxially forming a at least one graphene layer on that region. In a currently preferred embodiment, step (a) further includes the steps of (a1) providing a single crystal substrate of graphite and (a2) epitaxially forming multilayered single crystal hexagonal BN on the substrate. The hexagonal BN layer has a surface region substantially lattice-matched to graphene, and step (b) includes epitaxially forming at least one graphene layer on the surface region of the hexagonal BN layer. Applications to FETs are described. | 2010-03-04 |
20100051918 | ORGANIC THIN FILM TRANSISTOR AND ORGANIC THIN FILM LIGHT-EMITTING TRANSISTOR - An organic thin film transistor including a substrate having thereon at least three terminals of a gate electrode, a source electrode and a drain electrode, an insulator layer and an organic semiconductor layer, with a current between a source and a drain being controlled upon application of a voltage to the gate electrode, wherein the organic semiconductor layer includes a specified organic compound having an acetylene or olefin structure in the center thereof; and an organic thin film light emitting transistor utilizing an organic thin film transistor, wherein the organic thin film transistor is one in which light emission is obtained utilizing a current flowing between the source and the drain, and the light emission is controlled upon application of a voltage to the gate electrode, and is made high with respect to the response speed and has a large ON/OFF ratio, are provided. | 2010-03-04 |
20100051919 | ORGANIC THIN FILM TRANSISTOR AND ORGANIC THIN FILM LIGHT-EMITTING TRANSISTOR - An organic thin film transistor including a substrate having thereon at least three terminals of a gate electrode, a source electrode and a drain electrode, an insulator layer and an organic semiconductor layer, with a current between a source and a drain being controlled upon application of a voltage to the gate electrode, wherein the organic semiconductor layer includes a specified organic compound having an aromatic hydrocarbon group or an aromatic heterocyclic group in the center thereof; and an organic thin film light emitting transistor utilizing an organic thin film transistor, wherein the organic thin film transistor is one in which light emission is obtained utilizing a current flowing between the source and the drain, and the light emission is controlled upon application of a voltage to the gate electrode, and is made high with respect to the response speed and has a large ON/OFF ratio, are provided. | 2010-03-04 |
20100051920 | Composite Article Including a Cation-Sensitive Layer - A composite article includes a substrate having a surface, a cation-sensitive layer including a cation-sensitive material disposed on the surface of the substrate, and a silicone layer disposed between the substrate and the cation-sensitive layer. Cations are present on the surface of the substrate in an amount of at least 0.1 atomic weight percent based on the total atomic weight of the atoms on the surface of the substrate. The silicone layer includes a cured silicone composition for preventing cations from migrating from the substrate to the cation-sensitive layer. The inclusion of the silicone layer between the cation-sensitive layer and the substrate enables the use of materials for the substrate that have not been useable in the past due to the presence of excessive amounts of cations in the materials. | 2010-03-04 |
20100051921 | ORGANIC FIELD EFFECT TRANSISTOR - An organic field effect transistor comprising a gate electrode | 2010-03-04 |
20100051922 | Organic Thin Film Transistors - An organic thin film transistor comprising: a substrate; a source electrode and a drain electrode defining a channel; a layer of insulating material disposed over the source and drain electrodes; a layer of organic semi-conductive material extending across the channel; a layer of dielectric material; and a gate electrode disposed over the layer of dielectric material. | 2010-03-04 |
20100051923 | Organischer Feldeffekt Transistor - The invention relates to an organic field-effect transistor, in particular an organic thin-layer field-effect transistor, with a gate electrode, a drain electrode and a source electrode, an active layer of organic material which during operation is configured to form an electrical line channel, a dielectric layer which electrically isolates the active layer from the gate electrode, a dopant material layer which consists of a molecular dopant material whose molecules consist of two or more atoms and which dopant material is an electrical dopant for the organic material of the active layer, and wherein the dopant material layer is formed in a boundary surface region between the active layer and the dielectric layer or is formed adjacent to the boundary surface region. | 2010-03-04 |
20100051924 | FLUORENE-CONTAINING COMPOUND AND ORGANIC LIGHT EMITTING DEVICE EMPLOYING THE SAME - A novel fluorene-containing compound and an organic electroluminescent device including an organic layer employing the same. The fluorene-containing compound has excellent electrical characteristics and an excellent charge transporting capability, and so can be used as a hole injecting material, hole transporting material, and/or emitting material that is suitable for all-color fluorescent and phosphorescent devices, such as red, green, blue, and white fluorescent and phosphorescent devices. Accordingly, an organic electroluminescent device employing the fluorene-containing compound has high efficiency, a low driving voltage, high brightness, and a long lifetime. | 2010-03-04 |
20100051925 | ORGANIC LIGHT EMITTING DIODE DISPLAY DEVICE AND METHOD OF FABRICATING THE SAME - An organic light emitting diode (OLED) display device which can improve emission efficiency and reduce (or minimize) resonance effect, and a method of fabricating the same. The OLED display device includes a substrate; a first electrode disposed on the substrate and including a reflective layer; an organic layer disposed on the first electrode and including a white emission layer and a hole injection layer having a thickness between 200 and 300 Å; and a second electrode disposed on the organic layer. | 2010-03-04 |
20100051926 | Anthracene Derivative, Material for Light-Emitting Element, Light-Emitting Element, Light-Emitting Device, and Electronic Appliance - An anthracene derivative represented by general formula (1) is provided. In the formula, Ar | 2010-03-04 |
20100051927 | ORGANIC FIELD EFFECT TRANSISTOR AND ITS PRODUCTION METHOD - An organic field effect transistor (OFET) having a structure of a conductor layer/an insulator layer/a semiconductor layer is provided. This OFET comprises an insulator layer formed by mixing a polymer compound produced by polymerizing or copolymerizing a monomer represented by the formula (1): | 2010-03-04 |
20100051928 | ORGANIC ELECTROLUMINESCENCE DEVICE - An organic electroluminescence device includes: a pair of electrodes; and at least one organic layer including a light emitting layer, the light emitting layer being provided between the pair of electrodes, wherein at least one layer of the at least one organic layer contains a compound represented by formula (1): | 2010-03-04 |
20100051929 | Organic light emitting display apparatus and method of manufacturing same - An organic light emitting display apparatus having a substrate, a plurality of first electrodes of black color formed on the substrate, separators disposed on spaces between the first electrodes, a black matrix layer that is conductive and formed on the separators, an organic light emitting layer formed on the first electrodes so as to be electrically connected to the first electrodes, and a second electrode formed on the organic light emitting layer so as to be electrically connected to the organic light emitting layer. Thus, the first electrodes can be easily formed and the image contrast can be improved. | 2010-03-04 |
20100051930 | LIGHT EMITTING TRANSISTOR - A main object of the present invention is to provide a static induction light emitting transistor having an organic EL element structure and a vertical FET structure which is possible to avoid a problem of the shielding of light and a problem of shielding of electric field by a gate electrode. The above object is achieved by providing a light emitting transistor | 2010-03-04 |
20100051931 | SEMICONDUCTOR APPARATUS AND PROCESS FOR FABRICATING THE SAME - A semiconductor apparatus in which a conducting path formed from organic semiconductor molecules as a material has a novel structure and exhibits high mobility, and a manufacturing method for fabricating the same are provided. Fine particles that include a conductor or a semiconductor and organic semiconductor molecules, are alternately bonded through a functional group at both terminals of the organic semiconductor molecules to form a conducting path in a network form such that the conducting path in the fine particles and the conducting path in the organic semiconductor molecules are two-dimensionally or three-dimensionally linked together. This conducting path includes no intermolecular electron transfer, and the mobility is not restricted by the intermolecular electron transfer, and therefore the mobility of the conducting path along the main chain in the organic semiconductor molecules (in the direction of the axis of the molecule), for example, displays a high intramolecular mobility due to delocalized π electrons can be fully utilized. | 2010-03-04 |
20100051932 | NANOSTRUCTURE AND USES THEREOF - Disclosed herein are nanostructures comprising a conducting substrate, an array of nanowires, and one or more semiconductor nanolayers disposed radially around the nanowires. A layer of dye may be further disposed radially around the one or more semiconductor layers. The nanostructures may be used to provide a dye-sensitizing solar cell device. Other devices including the nanostructures and methods for making the nanostructures are also provided. | 2010-03-04 |
20100051933 | THIN FILM TRANSISTOR ARRAY SUBSTRATE AND METHOD OF FABRICATING THE SAME - A thin film transistor array substrate having a high charge mobility and that can raise a threshold voltage, and a method of fabricating the thin film transistor array substrate are provided. The thin film transistor array substrate includes: an insulating substrate; a gate electrode formed on the insulating substrate; an oxide semiconductor layer comprising a lower oxide layer formed on the gate electrode and an upper oxide layer formed on the lower oxide layer, such that the oxygen concentration of the upper oxide layer is higher than the oxygen concentration of the lower oxide layer; and a source electrode and a drain electrode formed on the oxide semiconductor layer and separated from each other. | 2010-03-04 |
20100051934 | THIN FILM TRANSISTOR ARRAY PANEL AND METHOD OF MANUFACTURING THE SAME - A thin film transistor array panel and a method of manufacturing the same are provided according to one or more embodiments. In an embodiment, a method includes: forming a gate line on an insulation substrate; stacking a gate insulating layer, an oxide semiconductor layer, a first barrier layer, and a first copper layer on the gate line; performing a photolithography process on the oxide semiconductor layer, the first barrier layer, and the first copper layer and forming a data line including a source electrode, a drain electrode, and an oxide semiconductor pattern; forming a passivation layer having the contact hole that exposes the drain electrode on the data line and the drain electrode; and forming a pixel electrode that is connected to the drain electrode through the contact hole on the passivation layer, wherein the forming of a data line, a drain electrode, and an oxide semiconductor pattern includes wet etching the first copper layer and then wet etching the first barrier layer and the oxide semiconductor layer. | 2010-03-04 |
20100051935 | LIQUID CRYSTAL DISPLAY AND METHOD OF MANUFACTURING THE SAME - A liquid crystal display and a method of manufacturing the same are provided. The liquid crystal display includes an insulating substrate, a gate electrode formed on the insulating substrate, an oxide semiconductor layer formed on the gate electrode, an etch stopper formed on the oxide semiconductor layer in a channel area, a common electrode formed on the insulating substrate, source and drain electrodes separated from each other on the etch stopper and extending to an upper portion of the oxide semiconductor layer, a passivation layer formed on the etch stopper, the common electrode, the source and drain electrodes, and a pixel electrode formed on the passivation layer and connected to the drain electrode. | 2010-03-04 |
20100051936 | BOTTOM GATE TYPE THIN FILM TRANSISTOR, METHOD OF MANUFACTURING THE SAME, AND DISPLAY APPARATUS - Provided is a bottom gate type thin film transistor including on a substrate ( | 2010-03-04 |
20100051937 | THIN-FILM TRANSISTOR AND METHOD OF MANUFACTURING SAME - There is provided a thin-film transistor including at least a substrate, a gate electrode, a gate insulating layer, an oxide semiconductor layer, a source electrode, a drain electrode and a protective layer, wherein the oxide semiconductor layer is an amorphous oxide containing at least one of the elements In, Ga and Zn, the gate electrode-side carrier density of the oxide semiconductor layer is higher than the protective layer-side carrier density thereof, and the film thickness of the oxide semiconductor layer is 30 nm±15 nm. | 2010-03-04 |
20100051938 | AMORPHOUS OXIDE SEMICONDUCTOR AND THIN FILM TRANSISTOR USING THE SAME - There is provided an amorphous oxide semiconductor including hydrogen and at least one element of indium (In) and zinc (Zn), the amorphous oxide semiconductor containing one of hydrogen atoms and deuterium atoms of 1×10 | 2010-03-04 |
20100051939 | NITRIDE BASED SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME - An interfacial reaction suppressing layer | 2010-03-04 |
20100051940 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SEMICONDUCTOR DEVICE - An object is to provide favorable interface characteristics of a thin film transistor including an oxide semiconductor layer without mixing of an impurity such as moisture. Another object is to provide a semiconductor device including a thin film transistor having excellent electric characteristics and high reliability, and a method by which a semiconductor device can be manufactured with high productivity. A main point is to perform oxygen radical treatment on a surface of a gate insulating layer. Accordingly, there is a peak of the oxygen concentration at an interface between the gate insulating layer and a semiconductor layer, and the oxygen concentration of the gate insulating layer has a concentration gradient. The oxygen concentration is increased toward the interface between the gate insulating layer and the semiconductor layer. | 2010-03-04 |
20100051941 | DISPLAY DEVICE - A display device in which an OFF current of a thin film transistor formed of metal oxide semiconductor provided to the display device is further lowered thus ensuring the stability of an operation of the thin film transistor is provided. In a display device in which thin film transistors each of which has a semiconductor layer formed of a metal oxide semiconductor layer are mounted on a substrate, a silicon nitride film is arranged between the substrate and the thin film transistors as a barrier layer, and a gate insulation film of the thin film transistor is formed of a silicon nitride film formed by a plasma CVD method. | 2010-03-04 |
20100051942 | ZnO-BASED THIN FILM TRANSISTOR AND METHOD OF MANUFACTURING THE SAME - A ZnO-based thin film transistor (TFT) is provided herein, as is a method of manufacturing the TFT. The ZnO-based TFT has a channel layer that comprises ZnO and ZnCl, wherein the ZnCl has a higher bonding energy than ZnO with respect to plasma. The ZnCl is formed through the entire channel layer, and specifically is formed in a region near THE surface of the channel layer. Since the ZnCl is strong enough not to be decomposed when exposed to plasma etching gas, an increase in the carrier concentration can be prevented. The distribution of ZnCl in the channel layer, may result from the inclusion of chlorine (Cl) in the plasma gas during the patterning of the channel layer. | 2010-03-04 |
20100051943 | METHOD FOR FORMING PATTERN, THIN FILM TRANSISTOR, DISPLAY DEVICE, METHOD FOR MANUFACTURING THEREOF, AND TELEVISION APPARATUS - To provide a display device which can be manufactured with higher efficiency in the use of material through a simplified manufacturing process, and a method for manufacturing the display device. Another object is to provide a technique by which patterns of a wiring the like which constitutes the display device can be formed to a desired shape with good control. In a method for forming a pattern according to the present invention, a mask is formed over a light-transmitting substrate; a first region including a photocatalyst is formed over the substrate and the mask; the photocatalyst is irradiated with light through the substrate to modify a part of the first region; a second region is formed; and a composition containing a pattern forming material is discharged to the second region, thus, a pattern is formed. The mask does not transmit light. | 2010-03-04 |
20100051944 | SILICON PROCESSING METHOD AND SILICON SUBSTRATE WITH ETCHING MASK - A silicon processing method includes: forming a mask pattern on a principal plane of a single-crystal silicon substrate; and applying crystal anisotropic etching to the principal surface to form a structure including a (111) surface and a crystal surface equivalent thereto and having width W | 2010-03-04 |
20100051945 | SILICON WAFER AND METHOD FOR PRODUCING THE SAME - A silicon wafer is produced through the steps of forming a silicon ingot by a CZ method with an interstitial oxygen concentration of not more than 7.0×10 | 2010-03-04 |
20100051946 | POLY-EMITTER TYPE BIPOLAR JUNCTION TRANSISTOR, BIPOLAR CMOS DMOS DEVICE, AND MANUFACTURING METHODS OF POLY-EMITTER TYPE BIPOLAR JUNCTION TRANSISTOR AND BIPOLAR CMOS DMOS DEVICE - A poly-emitter type bipolar transistor includes a buried layer formed over an upper portion of a semiconductor substrate, an epitaxial layer formed on the semiconductor substrate, a collector area formed on the epitaxial layer and connected to the buried layer, a base area formed at a part of an upper portion of the epitaxial layer, and a poly-emitter area formed on a surface of the semiconductor substrate in the base area and including a polysilicon material. A BCD device includes a poly-emitter type bipolar transistor having a poly-emitter area including a polysilicon material and at least one of a CMOS and a DMOS formed on a single wafer together with the poly-emitter type bipolar transistor. | 2010-03-04 |
20100051947 | AMORPHOUS INSULATOR FILM AND THIN-FILM TRANSISTOR - An amorphous insulator film is provided which is composed of silicon (Si) oxide, in which the amorphous insulator film includes Ar and an amount of Ar included therein is equal to or larger than 3 at. % in terms of atomic ratio with respect to Si. | 2010-03-04 |
20100051958 | DISPLAY DEVICE AND MANUFACTURING METHOD THEREOF - A display device includes an insulation substrate on which TFT elements, first electrodes, light emitting layers and a second electrode are stacked in this order. Auxiliary lines are arranged between the insulation substrate and the second electrodes, and an insulation layer is interposed between the auxiliary lines and the second electrode. The auxiliary lines and the second electrode are connected with each other via contact holes formed in the insulation layer. Due to such a constitution, it is possible to enhance image quality of an organic EL display device. | 2010-03-04 |
20100051959 | CIRCUIT BOARD AND DISPLAY DEVICE - The present invention provides a circuit board that includes high-performance thin film transistors whose characteristics are hardly varied thereamong in a monolithic circuit and also provide a display device including the circuit board. The circuit board of the present invention is a circuit board including a monolithic circuit including a thin film transistor on a substrate, wherein the thin film transistor includes a semiconductor layer, a gate insulating film, and a gate electrode, stacked in this order, a portion where the gate electrode overlaps with the semiconductor layer has an area of 40 μm | 2010-03-04 |
20100051960 | DEVICE AND PROCESS OF FORMING DEVICE WITH PRE-PATTERNED TRENCH AND GRAPHENE-BASED DEVICE STRUCTURE FORMED THEREIN - A graphene-based device is formed with a trench in one or more layers of material, a graphene layer within the trench, and a device structure on the graphene layer and within the trench. Fabrication techniques includes forming a trench defined by one or more layers of material, forming a graphene layer within the trench, and forming a device structure on the graphene layer and within the trench. | 2010-03-04 |
20100051961 | EPITAXIAL SUBSTRATE, SEMICONDUCTOR DEVICE SUBSTRATE, AND HEMT DEVICE - A buffer layer formed of In | 2010-03-04 |
20100051962 | Compound semiconductor device and the fabricating method of the same - A GaN layer functions as an electron transit layer and is formed to exhibit, at least at a portion thereof, A/B ratio of 0.2 or less obtained by a photoluminescence measurement, where “A” is the light-emission intensity in the 500-600 nm band, and “B” is the light-emission intensity at the GaN band-edge. | 2010-03-04 |
20100051963 | POWER TRANSISTOR - A power transistor. One embodiment provides a power transistor having a first terminal, a second terminal and a control terminal. A support layer is formed of a first material having a first bandgap. An active region is formed of a second material having a second bandgap wider than the first bandgap, and is disposed on the support layer. The active region is arranged to form part of a current path between the first and second terminal in a forward mode of operation. The active region includes at least one pn-junction. | 2010-03-04 |
20100051964 | METHOD FOR PREPARING A SEMICONDUCTOR ULTRANANOCRYSTALLINE DIAMOND FILM AND A SEMICONDUCTOR ULTRANANOCRYSTALLINE DIAMOND FILM PREPARED THEREFROM - A method for preparing a semiconductor ultrananocrystalline diamond (UNCD) film includes doping an UNCD film with an ion source at a dose not less than 10 | 2010-03-04 |
20100051965 | Carbon-Containing Semiconductor Substrate - A light-emitting diode (LED) device is provided. The LED device is formed on a substrate having a carbon-containing layer. Carbon atoms are introduced into the substrate to prevent or reduce atoms from an overlying metal/metal alloy transition layer from inter-mixing with atoms of the substrate. In this manner, a crystalline structure is maintained upon which the LED structure may be formed. | 2010-03-04 |
20100051966 | Methods of Making Semiconductor-Based Electronic Devices on a Wire and Articles That Can Be Made Using Such Devices - Strands of active electronic devices (AEDs), such as FETs, are made by first completely or partially forming a plurality of the AEDs on a precursor substrate. Then, one or more elongate conductors (e.g., wires) are secured to ones of the AEDs so as to electrically connected the AEDs together. After securing the conductor(s) to corresponding respective ones of the AEDs, the connected ones of the AEDs and their respective conductor(s) is/are liberated as one or more composite members from the precursor substrate by removing material from the substrate. Each of the composite substrates is further processed as needed to complete an AED strand. | 2010-03-04 |
20100051967 | Absorbing film - Materials can be prepared in a layer-by-layer fashion on a patterned first substrate and subsequently transferred to a second substrate. The transfer step can preserve the pattern of the first substrate, such that the second substrate will bear a pattern of the transferred material. The material can be an electrostatic multilayer including a light absorbing dye, such as a J-aggregating cyanine dye. | 2010-03-04 |
20100051978 | SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD FOR MANUFACTURING SAME - A semiconductor light emitting device includes: a laminated structure body including an n-type semiconductor layer, a p-type semiconductor layer and a light emitting layer provided between the n-type semiconductor layer and the p-type semiconductor layer; a first electrode connected to the n-type semiconductor layer and containing at least one of silver and a silver alloy; and a second electrode connected to the p-type semiconductor layer. | 2010-03-04 |
20100051979 | Semiconductor device and optical print head - A semiconductor device includes a diamond-like carbon film formed on the substrate. A thin film is formed on the diamond-like carbon film. The thin film has a thickness thinner than the diamond-like carbon. A semiconductor thin film having a semiconductor element is bonded onto the thin film. | 2010-03-04 |
20100051980 | METHOD FOR MANUFACTURING GROUP III NITRIDE COMPOUND SEMICONDUCTOR LIGHT-EMITTING DEVICE, GROUP III NITRIDE COMPOUND SEMICONDUCTOR LIGHT-EMITTING DEVICE, AND LAMP - A method for manufacturing a Group III nitride semiconductor light-emitting device according to the present invention, comprising forming, on a substrate, a semiconductor layer comprised of a Group III nitride compound semiconductor containing Ga as a Group III element by a sputtering method, wherein during the formation of the semiconductor layer, sputtering is performed under the condition where at least the surface layer of a sputtering target comprised of Ga is liquefied. | 2010-03-04 |
20100051981 | SEMICONDUCTOR LIGHT-EMITTING DEVICE, MANUFACTURING METHOD THEREOF, AND LAMP - There is provided a semiconductor light-emitting device having excellent light extraction efficiency and low wavelength unevenness, a manufacturing method thereof, and a lamp. A semiconductor light-emitting device includes an n-type semiconductor layer | 2010-03-04 |
20100051982 | LIGHT-EMITTING DIODE DEVICE AND METHOD FOR FABRICATING THE SAME - A semiconductor device is disclosed. The semiconductor device comprises a light-emitting diode chip disposed in a cavity of a semiconductor substrate. At least two isolated outer wiring layers are disposed on the bottom surface of the semiconductor substrate and are electrically connected to the light-emitting diode chip, serving as input terminals. A lens module is adhered to the top surface of the semiconductor substrate to cap the cavity, in which the lens module comprises a molded lens and a transparent conductive layer coated with a fluorescent material under the molded lens. A method for fabricating the semiconductor devices is also disclosed. | 2010-03-04 |
20100051983 | POLARIZATION RECYCLING OPTICS FOR LEDS - An integrated multi-layer apparatus and method of producing the same is disclosed. The structure comprises an LED configured to emit first and second polarized light, and a polarizing layer configured to pass a first polarized light and reflect the second polarized light back to the LED, wherein the LED is further configured to randomly scatter the second polarized light reflected from the polarizing layer and redirect the scattered light back to the polarizing layer. | 2010-03-04 |
20100051984 | Phosphor-Converted LED - A light source and method for fabricating the same are disclosed. The light source includes a die, a light conversion component, and a scattering ring. The die emits light of a first wavelength through a top surface of the die and one or more side surfaces of the die, and is bonded to a mounting substrate. The light conversion component converts light of the first wavelength to light of a second wavelength, the light conversion component having a bottom surface bonded to the top surface of the die. The light conversion component has lateral dimensions such that a space exists around the die, the space being bounded by the substrate and the light conversion component. The scattering ring is positioned in the space such that a portion of the light emitted from the side surfaces of the die is scattered into the light conversion component. | 2010-03-04 |
20100051985 | LED PACKAGE - The present invention provides an LED package including: a heat discharge body provided with a plurality of radially protruding heat discharge fins at an outer circumferential surface and molding material filled spaces between the heat discharge fins; a package body which is received on a top surface of the heat discharge body and has a cavity; a pair of lead frames extended from upper parts of the heat discharge body to both sides thereof; and an LED chip mounted inside the cavity. | 2010-03-04 |
20100051986 | Light-emitting diodes using nano-rods and methods of manufacturing a light-emitting diode - Light-emitting diodes, and methods of manufacturing the light-emitting diode, are provided wherein a plurality of nano-rods may be formed on a reflection electrode. The plurality of nano-rods extend perpendicularly from an upper surface of the reflection electrode. Each of the nano-rods includes a first region doped with a first type dopant, a second region doped with a second type dopant that is an opposite type to the first type dopant, and an active region between the first region and the second region. A transparent insulating layer may be formed between the plurality of nano-rods. A transparent electrode may be formed on the plurality of nano-rods and the transparent insulating layer. | 2010-03-04 |
20100051987 | SEMICONDUCTOR LIGHT-EMITTING DEVICE AND METHOD FOR MANUFACTURING SAME - A semiconductor light-emitting device includes: a laminated structure, a first electrode, a second electrode and a dielectric laminated film. The laminated structure includes, a first semiconductor layer, a second semiconductor layer, and a light-emitting layer provided between the first semiconductor layer and the second semiconductor layer, in which the second semiconductor layer and the light-emitting layer are selectively removed and a part of the first semiconductor layer is exposed to a first main surface on the side of the second semiconductor layer. The first electrode is provided on the first main surface of the laminated structure and connected to the first semiconductor layer and has a first region including a first metal film provided on the first semiconductor layer of the first main surface, and a second region including a second metal film provided on the first semiconductor layer and having a higher reflectance for light emitted from the light-emitting layer than the first metal film and having a higher contact resistance with respect to the first semiconductor layer than the first metal film. The second electrode is provided on the first main surface of the laminated structure and connected to the second semiconductor layer. The dielectric laminated film is provided on the first and second semiconductor layer being not covered with the first and second electrode and has a plurality of dielectric films having different refractive indices being laminated. | 2010-03-04 |
20100051988 | LIGHT EMITTING DEVICE AND METHOD FOR MANUFACTURING THE SAME - A light emitting device includes: a substrate having a concave portion formed on a surface thereof; a light emitting element emitting a first light which is a blue light or a near-ultraviolet light; a resin sheet being a deformable resin sheet formed on the substrate so as to cover the light emitting element; a first transmissive layer formed in a hemispherical shape on the first region of the resin sheet, and transmitting the first light; a color conversion layer including a fluorescent material that converts the first light into a second light of a different wavelength from that of the first light and a transmissive material that transmits the first light, the color conversion layer covering the first transmissive layer in such a manner that an end portion reaches an upper face of the resin sheet; and a second transmissive layer covering the color conversion layer in such a manner that an end portion reaches the upper face of the resin sheet, and transmitting the first light and the second light. | 2010-03-04 |
20100051989 | LED AND METHOD FOR MAKING THE SAME - An LED includes a substrate, an LED die, and a packaging layer. The substrate has conductive pins extending therethrough. The LED die is arranged on the substrate and electronically connected to the conductive pins of the substrate. The packaging layer fills in the substrate to encapsulate the LED die therein. A plurality of fillers are distributed in the packaging layer. Each of the fillers has a plurality of nano-particles distributed therein for enhancing a light dispersion of light generated by the LED die. | 2010-03-04 |
20100051990 | Electroluminescence Device - An organic EL element has excellent features as compared with other electroluminescent elements, but on the other hand, has a problem that the life of the element is not sufficiently long. In addition, since the organic EL element is expected to be applied to a mobile display and the like, it is also important to improve power efficiency. Hence, an object of the invention is to provide an element structure to realize an improvement in power efficiency and an improvement in the life of the element at the same. In the construction of an organic EL element of the invention, the first electroluminescent film | 2010-03-04 |
20100051991 | ORGANIC EL DEVICE AND PROCESS OF PRODUCING THE SAME - An organic EL device includes a light-emitting element having a first electrode disposed above a substrate, a second electrode arranged above the first electrode, and a light emission functional layer arranged between the first and second electrodes. The second electrode includes a mixture layer composed of a mixture of an electron-injecting material and a reducing material for reducing the electron-injecting material and a transparent electrically conductive layer formed on the mixture layer. | 2010-03-04 |
20100051992 | ORGANIC ELECTROLUMINESCENCE ELEMENT AND MANUFACTURING METHOD THEREOF - A main object of the present invention is to provide an organic EL element which can absolutely segment cathodes when forming an organic layer by a coating method, and a producing method thereof. The present invention attains the object by providing a producing method of an organic EL element comprising steps of: an organic layer forming step, in which at least one organic layer out of organic layers, including a light emitting layer, constituting an organic EL layer is formed by either of a printing method, a discharge method, or a transfer method on a substrate for an organic EL element, wherein the substrate for an organic electroluminescence element comprises a substrate, a first electrode layer formed on the substrate, plural insulating banks formed on the substrate on which the first electrode layer is formed and setting a segmentalized region which segments a second electrode layer into plural pieces, and wherein each of the banks has plural small banks provided in parallel with a predetermined gap; and a step of controlling a gap between the small banks such that, a height t | 2010-03-04 |
20100051993 | LIGHT EMITTING APPARATUS AND MANUFACTURING METHOD THEREOF - Disclosed is a light emitting apparatus including: a first electrode; at least one carrier transporting layer on the first electrode; a second electrode on the carrier transporting layer; a partition wall formed on an upper face side of a substrate the partition wall including an opening to be communicated with the first electrode; and a light emitting protecting layer mediating between the partition wall and the carrier transporting layer. | 2010-03-04 |
20100051994 | SEMICONDUCTOR LIGHT EMITTING DEVICE AND SEMICONDUCTOR LIGHT EMITTING APPARATUS - A semiconductor light emitting device, includes: a stacked structure unit including a first semiconductor layer, a second semiconductor layer, and a light emitting layer provided between the first semiconductor layer and the second semiconductor layer; a first electrode provided on a first major surface of the stacked structure unit on the second semiconductor layer side to connect to the first semiconductor layer; and a second electrode provided on the first major surface of the stacked structure unit to connect to the second semiconductor layer. The second electrode includes: a first film provided on the second semiconductor layer; and a second film provided on a rim of the first film on the second semiconductor layer. The first film has a relatively low contact resistance with the second semiconductor layer. The second film has a relatively high contact resistance with the second semiconductor layer. A distance from an outer edge of the second film to the first film is smaller at a central portion than at a peripheral portion of the first major surface. | 2010-03-04 |
20100051995 | METHOD FOR MANUFACTURING SEMICONDUCTOR LIGHT EMITTING APPARATUS AND SEMICONDUCTOR LIGHT EMITTING APPARATUS - A method for manufacturing a semiconductor light emitting apparatus includes causing a semiconductor light emitting device and a mounting member to face each other. The semiconductor light emitting device includes a stacked structure unit including a first semiconductor layer, a second semiconductor layer, and a light emitting layer provided between the first semiconductor layer and the second semiconductor layer, a first electrode provided on a major surface of the stacked structure unit to connect to the first semiconductor layer, a second electrode provided on the major surface of the stacked structure unit to connect to the second semiconductor layer, and a dielectric stacked film provided on the first semiconductor layer and the second semiconductor layer of the major surface not covered by the first electrode and the second electrode, formed of stacked dielectric films having different refractive indexes, and including a protruding portion erected on at least a portion of a rim of at least one of the first and second electrodes. The mounting member includes a connection member connected to at least one of the first and second electrodes. The method further includes causing the connection member to contact and join to the at least one of the first and second electrodes using the protruding portion as a guide. | 2010-03-04 |
20100051996 | LIGHT-EMITTING SEMICONDUCTOR DEVICE AND PACKAGE THEREOF - The present application discloses a light-emitting semiconductor device including a semiconductor light-emitting element, a transparent paste layer and a wavelength conversion structure. A first light emitted from the semiconductor light-emitting element enters the wavelength conversion structure to generate a second light which has a wavelength different from that of the first light. In addition, the present application also provides a light-emitting semiconductor device package. | 2010-03-04 |
20100051997 | Organic light emitting diode and method of fabricating the same - The present invention discloses an organic light emitting diode and a method of fabricating the organic light emitting diode. The OLED device includes one or more light emitting layers, and the light emitting layer is composed of one or more light emitting materials and one or more subject materials, and the subject material has a molecular polarity different from the molecular polarity of the light emitting material, such that the light emitting molecules can be self dispersed to emit a darker blue light color or a light color of a longer wavelength. | 2010-03-04 |
20100051998 | Organic light emitting diode and method of fabricating the same - The present invention discloses an organic light emitting diode and a method of fabricating the organic light emitting diode. The OLED device includes one or more light emitting layers, and the light emitting layer is composed of one or more light emitting materials and one or more subject materials, and the subject material has a molecular polarity different from the molecular polarity of the light emitting material, such that the light emitting molecules can be self dispersed to emit a more reddish light color or a light color of a longer wavelength. | 2010-03-04 |
20100051999 | LIQUID-CRYSTALLINE POLYESTER RESIN MIXTURE, AND REFLECTING PLATE AND LIGHT-EMITTING DEVICE USING THE SAME - The present inventions provides a liquid-crystalline polyester resin mixture comprising a liquid-crystalline polyester, a particulate titanium oxide and at least one compound selected from the group consisting of a fatty acid amide and a fatty acid metal salt, wherein the resin mixture contains the particulate titanium oxide in an amount of 40 to 80 parts by weight and the at least one compound in an amount of 0.005 to parts by weight, both the amounts being based on 100 parts by weight of the component (A) in the resin mixture. | 2010-03-04 |
20100052000 | OPTOELECTRONIC SEMICONDUCTOR DEVICE - An optoelectronic semiconductor device in accordance with an embodiment of present invention includes a conversion unit having a first side; an electrical connector; a contact layer having an outer perimeter; and at least three successive discontinuous-regions formed along the outer perimeter and having at least one different factor; wherein the electrical connector, the contact layer, and the discontinuous-regions are formed on the first side of the conversion unit. | 2010-03-04 |
20100052001 | LED PACKAGING STRUCTURE - A light emitting diode packaging structure includes a package body, a red LED chip, a blue LED chip, a green LED chip, a package material and a yellow phosphor. Three LED chips are disposed within an accommodating room of the body package and covered by the package material. The yellow phosphor is uniformly mixed with the package material. A white light is formed by a mix of three types of light from the LED chips. Additionally, a yellow light which is generated from the excitement of the yellow phosphor with the blue light is mixed with a part of the blue light to further form the white light. | 2010-03-04 |
20100052002 | MICRO-REFLECTORS ON A SUBSTRATE FOR HIGH-DENSITY LED ARRAY - The present invention provides an optical array module that includes a plurality of semiconductor devices mounted on a thermal substrate formed with a plurality of openings that function as micro-reflectors, wherein each micro-reflector includes a layer of reflective material to reflect light. Such material preferably is conductive so as to provide electrical connection for its associated semiconductor device. | 2010-03-04 |
20100052003 | Surface Mountable Chip - A surface mountable device having a circuit device and a base section. The circuit device includes top and bottom layers having a top contact and a bottom contact, respectively. The base section includes a substrate having a top base surface and a bottom base surface. The top base surface includes a top electrode bonded to the bottom contact, and the bottom base surface includes first and second bottom electrodes that are electrically isolated from one another. The top electrode is connected to the first bottom electrode, and the second bottom electrode is connected to the top contact by a vertical conductor. An insulating layer is bonded to a surface of the circuit device and covers a portion of a vertical surface of the bottom layer. The vertical conductor includes a layer of metal bonded to the insulating layer. | 2010-03-04 |
20100052004 | LED Bonding Structures and Methods of Fabricating LED Bonding Structures - An LED is disclosed that includes a conductive submount, a bond pad having a total volume less than 3×10 | 2010-03-04 |
20100052005 | SEMICONDUCTOR CHIP ASSEMBLY WITH POST/BASE HEAT SPREADER AND CONDUCTIVE TRACE - A semiconductor chip assembly includes a semiconductor device, a heat spreader, a conductive trace and an adhesive. The semiconductor device is electrically connected to the conductive trace and thermally connected to the heat spreader. The heat spreader includes a post and a base. The post extends upwardly from the base into an opening in the adhesive, and the base extends laterally from the post. The adhesive extends between the post and the conductive trace and between the base and the conductive trace. The conductive trace provides signal routing between a pad and a terminal. | 2010-03-04 |
20100052006 | Light emitting semiconductor device - A light emitting semiconductor device includes a base substrate; a light emitting semiconductor element including a crystal growth basis and provided on the base substrate so that the crystal growth basis faces in opposite direction to the base substrate; a first transparent sealing medium which seals the light emitting semiconductor on the base substrate; and a second transparent sealing medium which seals the light emitting semiconductor over the first transparent sealing medium and contains phosphor. A thickness of the second sealing medium in a portion with high emission intensity is larger than that of the other portion of the first sealing medium; and the portion with high emission intensity is defined as a portion where light emission intensity from the light emitting semiconductor element is maximum. | 2010-03-04 |
20100052007 | LIGHT-EMITTING DEVICE, MANUFACTURING METHOD THEREOF, AND LAMP - The present invention provides a light-emitting device comprising an n-type semiconductor layer, a light-emitting layer, a p-type semiconductor layer and a titanium oxide-based conductive film layer laminated in this order, wherein the titanium oxide-based conductive film layer comprises a first layer as a light extraction layer and a second layer as a current diffusion layer, the second layer being arranged on the p-type semiconductor layer side of the first layer, a method of manufacturing a light-emitting device, and a lamp. | 2010-03-04 |
20100052048 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME - A semiconductor device and a method of manufacturing the same includes forming trenches in a semiconductor substrate, and then forming spacers composed of a first polysilicon layer in the trench, and then forming a second polysilicon layer over the spacers and filling the trench. Therefore, even in case of a power MOSFET device having a small line width and a high aspect ratio, generation of voids in the polysilicon when forming a gate is prevented, and thus, device reliability is enhanced. | 2010-03-04 |
20100052049 | Integrated Circuit with a Laterally Diffused Metal Oxide Semiconductor Device and Method of Forming the Same - An integrated circuit with a transistor advantageously embodied in a laterally diffused metal oxide semiconductor device having a gate located over a channel region recessed into a semiconductor substrate and a method of forming the same. In one embodiment, the transistor includes a source/drain including a lightly or heavily doped region adjacent the channel region, and an oppositely doped well extending under the channel region and a portion of the lightly or heavily doped region of the source/drain. The transistor also includes a channel extension, within the oppositely doped well, under the channel region and extending under a portion of the lightly or heavily doped region of the source/drain. | 2010-03-04 |
20100052050 | Integrated Circuit with a Laterally Diffused Metal Oxide Semiconductor Device and Method of Forming the Same - An integrated circuit with a transistor advantageously embodied in a laterally diffused metal oxide semiconductor device having a gate located over a channel region recessed into a semiconductor substrate and a method of forming the same. In one embodiment, the transistor includes a source/drain including a lightly or heavily doped region adjacent the channel region, and an oppositely doped well extending under the channel region and a portion of the lightly or heavily doped region of the source/drain. The transistor also includes a channel extension, within the oppositely doped well, under the channel region and extending under a portion of the lightly or heavily doped region of the source/drain. | 2010-03-04 |
20100052051 | Integrated Circuit with a Laterally Diffused Metal Oxide Semiconductor Device and Method of Forming the Same - An integrated circuit with a transistor advantageously embodied in a laterally diffused metal oxide semiconductor device having a gate located over a channel region recessed into a semiconductor substrate and a method of forming the same. In one embodiment, the transistor includes a source/drain including a lightly or heavily doped region adjacent the channel region, and an oppositely doped well extending under the channel region and a portion of the lightly or heavily doped region of the source/drain. The transistor also includes a channel extension, within the oppositely doped well, under the channel region and extending under a portion of the lightly or heavily doped region of the source/drain. | 2010-03-04 |
20100052052 | Integrated Circuit with a Laterally Diffused Metal Oxide Semiconductor Device and Method of Forming the Same - An integrated circuit with a transistor advantageously embodied in a laterally diffused metal oxide semiconductor device having a gate located over a channel region recessed into a semiconductor substrate and a method of forming the same. In one embodiment, the transistor includes a source/drain including a lightly or heavily doped region adjacent the channel region, and an oppositely doped well extending under the channel region and a portion of the lightly or heavily doped region of the source/drain. The transistor also includes a channel extension, within the oppositely doped well, under the channel region and extending under a portion of the lightly or heavily doped region of the source/drain. | 2010-03-04 |
20100052053 | SOI BODY CONTACT USING E-DRAM TECHNOLOGY - A semiconductor structure is disclosed. The semiconductor structure includes an active semiconductor layer, a semiconductor device having a gate disposed on top of the active semiconductor layer, and source and drain regions and a body/channel region disposed within the active semiconductor layer, an insulator layer having a first and second side, the first side being adjacent to the active semiconductor layer, a substrate disposed adjacent to the second side of the insulator layer, a body contact disposed under the body/channel region and in the insulator layer. The body contact electrically connects with and contacts with the body/channel region of the semiconductor device and the substrate, to thereby form an ohmic contact and to eliminate floating body effects. | 2010-03-04 |
20100052054 | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE - The present invention relates to a method of manufacturing a semiconductor memory device and a semiconductor memory device manufactured using the same. A method of manufacturing a semiconductor device comprises defining source/drain regions in semiconductor substrate through an etch process using a mask, and forming a gate and source/drain by depositing a conductive material over the defined regions and the semiconductor substrate and patterning the conductive material. | 2010-03-04 |
20100052055 | Semiconductor device having vertical field effect transistor and method of manufacturing the same - A semiconductor device has: an insulating substrate; a first semiconductor layer of a first conductivity type formed on the insulating substrate; a first vertical field effect transistor of the first conductivity type, one of whose source and drain being formed on the first semiconductor layer; a second semiconductor layer of a second conductivity type formed on the insulating substrate; and a second vertical field effect transistor of the second conductivity type, one of whose source and drain being formed on the second semiconductor layer. The first semiconductor layer and the second semiconductor layer are directly in contact with each other. | 2010-03-04 |
20100052056 | ELECTROSTATIC DISCHARGE PROTECTION DEVICE - An ESD protection device includes a substrate with a doped well of a first conductive type, a first and a second doping region of the first conductive type and a third and a fourth doping region of a second conductive type respectively disposed in the doped well, a first gate disposed on the substrate and between the first and the second doping region, and a second gate disposed on the substrate and between the second and the third doping region to determine the distance between the second and the third doping region in order to precisely adjust the breakdown voltage of the ESD protection device of the present invention. | 2010-03-04 |
20100052057 | HIGH VOLTAGE DEVICE WITH REDUCED LEAKAGE - A semiconductor device is provided which includes a semiconductor substrate, a gate structure formed on the substrate, sidewall spacers formed on each side of the gate structure, a source and a drain formed in the substrate on either side of the gate structure, the source and drain having a first type of conductivity, a lightly doped region formed in the substrate and aligned with a side of the gate structure, the lightly doped region having the first type of conductivity, and a barrier region formed in the substrate and adjacent the drain. The barrier region is formed by doping a dopant of a second type of conductivity different from the first type of conductivity. | 2010-03-04 |
20100052068 | DRIVE CURRENT ADJUSTMENT FOR TRANSISTORS FORMED IN THE SAME ACTIVE REGION BY LOCALLY PROVIDING EMBEDDED STRAIN-INDUCING SEMICONDUCTOR MATERIAL IN THE ACTIVE REGION - The drive current capability of a pull-down transistor and a pass transistor formed in a common active region may be adjusted on the basis of different strain levels obtained by providing at least one embedded semiconductor alloy in the active region, thereby providing a simplified overall geometric configuration of the active region. Hence, static RAM cells may be formed on the basis of a minimum channel length with a simplified configuration of the active region, thereby avoiding significant yield losses as may be observed in sophisticated devices, in which a pronounced variation of the transistor width is conventionally used to adjust the ratio of the drive currents for the pull-down and pass transistors. | 2010-03-04 |
20100052069 | STATIC RAM CELL DESIGN AND MULTI-CONTACT REGIME FOR CONNECTING DOUBLE CHANNEL TRANSISTORS - A static RAM cell may be formed on the basis of two double channel transistors and a select transistor, wherein a body contact may be positioned laterally between the two double channel transistors in the form of a dummy gate electrode structure, while a further rectangular contact may connect the gate electrodes, the source regions and the body contact, thereby establishing a conductive path to the body regions of the transistors. Hence, compared to conventional body contacts, a very space-efficient configuration may be established so that bit density in static RAM cells may be significantly increased. | 2010-03-04 |
20100052070 | NOVEL DEVICE SCHEME OF HKMG GATE-LAST PROCESS - The present disclosure provides a method for making metal gate stacks of a semiconductor device. The method includes forming a high k dielectric material layer on a semiconductor substrate; forming a conductive material layer on the high k dielectric material layer; forming a dummy gate in a n-type field-effect transistor (nFET) region and a second dummy gate in a pFET region employing polysilicon; forming an inter-level dielectric (ILD) material on the semiconductor substrate; applying a first chemical mechanical polishing (CMP) process to the semiconductor substrate; removing the polysilicon from the first dummy gate, resulting in a first gate trench; forming a n-type metal to the first gate trench; applying a second CMP process to the semiconductor substrate; removing the polysilicon from the second dummy gate, resulting in a second gate trench; forming a p-type metal to the second gate trench; and applying a third CMP process to the semiconductor substrate. | 2010-03-04 |
20100052071 | ENGINEERED OXYGEN PROFILE IN METAL GATE ELECTRODE AND NITRIDED HIGH-K GATE DIELECTRICS STRUCTURE FOR HIGH PERFORMANCE PMOS DEVICES - A PMOS transistor is disclosed which includes a nitrogen containing barrier to oxygen diffusion between a gate dielectric layer and a metal gate in the PMOS transistor, in combination with a low oxygen region of the metal gate in direct contact with the nitrogen containing barrier and an oxygen rich region of the metal gate above the low oxygen content metal region. The nitrogen containing barrier may be formed by depositing nitrogen containing barrier material on the gate dielectric layer or by nitridating a top region of the gate dielectric layer. The oxygen rich region of the metal gate may be formed by depositing oxidized metal on the low oxygen region of the metal gate or by oxidizing a top region of the low oxygen region of the metal gate. | 2010-03-04 |
20100052072 | DUAL GATE STRUCTURE ON A SAME CHIP FOR HIGH-K METAL GATE TECHNOLOGY - A semiconductor device and method for fabricating a semiconductor device is disclosed. The method includes providing semiconductor substrate having a first region and a second region, forming a high-k dielectric layer over the semiconductor substrate, forming a capping layer over the high-k dielectric layer, forming a metal layer over the capping layer, removing the metal layer and capping layer in the second region, forming a polysilicon layer over the metal layer in the first region and over the high-k dielectric layer in the second region, and forming an active device with the metal layer in the first region and forming a passive device without the metal layer in the second region. | 2010-03-04 |
20100052073 | SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE - In an LCD driver IC, a high-breakdown-voltage MISFET is mounted together with a typical low-breakdown-voltage MISFET. Because the high-breakdown-voltage MISFET has a gate oxide film thicker than that of the typical MISFET, the electrode of the high-breakdown-voltage MISFET is inevitably high in level. Accordingly, the depth of a gate contact is shallow so that process compatibility with the typical portion is necessary. In the present invention, in, e.g., the channel width direction of the high-breakdown-voltage MISFET, the boundary of a thick-film gate oxide region is located inwardly of the end of a gate electrode. At the gate electrode portion thus lowered in level, a gate contact is disposed so that the boundary of the thick film is located inwardly of the end of the gate electrode and between the gate contact and a channel end. | 2010-03-04 |
20100052074 | METAL GATE TRANSISTOR AND METHOD FOR FABRICATING THE SAME - A method for fabricating a transistor having metal gate is disclosed. First, a substrate is provided, in which the substrate includes a first transistor region and a second transistor region. A plurality of dummy gates is formed on the substrate, and a dielectric layer is deposited on the dummy gate. The dummy gates are removed to form a plurality of openings in the dielectric layer. A high-k dielectric layer is formed to cover the surface of the dielectric layer and the opening, and a cap layer is formed on the high-k dielectric layer thereafter. The cap layer disposed in the second transistor region is removed, and a metal layer is deposited on the cap layer of the first transistor region and the high-k dielectric layer of the second transistor region. A conductive layer is formed to fill the openings of the first transistor region and the second transistor region. | 2010-03-04 |
20100052075 | INTEGRATING A FIRST CONTACT STRUCTURE IN A GATE LAST PROCESS - A semiconductor device is provided which includes a semiconductor substrate, a transistor formed on the substrate, the transistor having a gate stack including a metal gate and high-k gate dielectric and a dual first contact formed on the substrate. The dual first contact includes a first contact feature, a second contact feature overlying the first contact feature, and a metal barrier formed on sidewalls and bottom of the second contact feature, the metal barrier layer coupling the first contact feature to the second contact feature. | 2010-03-04 |
20100052076 | METHOD OF FABRICATING HIGH-K POLY GATE DEVICE - The present disclosure provides a semiconductor device that includes a semiconductor substrate, and a transistor formed in the substrate. The transistor has a gate structure that includes an interfacial layer formed on the substrate, a high-k dielectric layer formed on the interfacial layer, a capping layer formed on the high-k dielectric layer, the capping layer including a silicon oxide, silicon oxynitride, silicon nitride, or combinations thereof, and a polysilicon layer formed on the capping layer. | 2010-03-04 |
20100052077 | HIGH-K METAL GATE STRUCTURE INCLUDING BUFFER LAYER - A high-k metal gate structure including a buffer layer and method of fabrication of such, is provided. The buffer layer may interpose an interface oxide layer and a high-k gate dielectric layer. In one embodiment, the buffer layer includes aluminum oxide. The buffer layer and the high-k gate dielectric layer may be formed in-situ using an atomic layer deposition (ALD) process. | 2010-03-04 |