10th week of 2015 patent applcation highlights part 19 |
Patent application number | Title | Published |
20150060845 | SEMICONDUCTOR DEVICE - A semiconductor device includes a first and a second conductive films over an insulating surface; a first insulating film over the insulating surface and the first and the second conductive films; a semiconductor film overlapping with the first conductive film with the first insulating film provided therebetween; a third conductive film in contact with the semiconductor film; a fourth conductive film in contact with the semiconductor film and overlapping with the second conductive film with the first insulating film provided therebetween; a second insulating film including a thick region and a thin region, over the semiconductor film and the third and the fourth conductive films; a fifth conductive film overlapping with the semiconductor film with the second insulating film provided therebetween; and a sixth conductive film overlapping with the fourth conductive film over the thin region of the second insulating film. | 2015-03-05 |
20150060846 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE - A semiconductor device in which the threshold is adjusted is provided. In a transistor including a semiconductor, a source or drain electrode electrically connected to the semiconductor, a gate electrode, and an electron trap layer between the gate electrode and the semiconductor, the electron trap layer includes crystallized hafnium oxide. The crystallized hafnium oxide is deposited by a sputtering method using hafnium oxide as a target. When the substrate temperature is Tsub (° C.) and the proportion of oxygen in an atmosphere is P (%) in the sputtering method, P≧45−0.15×Tsub is satisfied. The crystallized hafnium oxide has excellent electron trapping properties. By the trap of an appropriate number of electrons, the threshold of the semiconductor device can be adjusted. | 2015-03-05 |
20150060847 | Semiconductor Device - Provided is a semiconductor device including a transistor in which a first gate and a second gate are provided with a channel formation region provided therebetween and which achieves both control of the threshold voltage and an increase in the on-state current. In a period during which first voltage with which the transistor is turned off is supplied to the first gate, control voltage for controlling the threshold voltage is supplied to the second gate. In a period during which second voltage with which the transistor is turned on is supplied to the first gate, the second voltage is supplied to the first gate and voltage in which voltage based on change in the voltage of a signal supplied to the first gate is added to the control voltage is supplied to the second gate. | 2015-03-05 |
20150060848 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - To provide a highly reliable semiconductor device using an oxide semiconductor. The semiconductor device includes a first electrode layer; a second electrode layer positioned over the first electrode layer and including a stacked-layer structure of a first conductive layer and a second conductive layer; and an oxide semiconductor film and an insulating film positioned between the first electrode layer and the second electrode layer in a thickness direction. The first conductive layer and the insulating film have a first opening portion in a region overlapping with the first electrode layer. The oxide semiconductor film has a second opening portion in a region overlapping with the first opening portion. The second conductive layer is in contact with the first electrode layer exposed in the first opening portion and the second opening portion. | 2015-03-05 |
20150060849 | SEMICONDUCTOR DEVICE - To provide a transistor which includes an oxide semiconductor and is capable of operating at high speed or a highly reliable semiconductor device including the transistor, a transistor in which an oxide semiconductor layer including a pair of low-resistance regions and a channel formation region is provided over an electrode layer, which is embedded in a base insulating layer and whose upper surface is at least partly exposed from the base insulating layer, and a wiring layer provided above the oxide semiconductor layer is electrically connected to the electrode layer or a part of a low-resistance region of the oxide semiconductor layer, which overlaps with the electrode layer. | 2015-03-05 |
20150060850 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - In an active matrix display device, electric characteristics of thin film transistors included in a circuit are important, and performance of the display device depends on the electric characteristics. Thus, by using an oxide semiconductor film including In, Ga, and Zn for an inverted staggered thin film transistor, variation in electric characteristics of the thin film transistor can be reduced. Three layers of a gate insulating film, an oxide semiconductor layer and a channel protective layer are successively formed by a sputtering method without being exposed to air. Further, in the oxide semiconductor layer, the thickness of a region overlapping with the channel protective film is larger than that of a region in contact with a conductive film. | 2015-03-05 |
20150060851 | DISPLAY DEVICE, METHOD OF MANUFACTURING THE SAME, AND ELECTRONIC UNIT - A display device includes a thin film transistor and a wiring layer. The thin film transistor including a control electrode, a semiconductor layer facing the control electrode, a first electrode electrically connected to the semiconductor layer, and a second electrode including a metal film having resistance lower than that of the light transmissive material. The second electrode is electrically connected to each of the semiconductor layer and the wiring layer. A difference in ionization tendency between a material configuring the metal film and a conductive material configuring a part or whole of the wiring layer is smaller than a difference in ionization tendency between the light transmissive material and the conductive material. | 2015-03-05 |
20150060852 | SEMICONDUCTOR DEVICE - A transistor is provided in which the bottom surface portion of an oxide semiconductor film is provided with a metal oxide film containing a constituent similar to that of the oxide semiconductor film, and an insulating film containing a different constituent from the metal oxide film and the oxide semiconductor film is formed in contact with a surface of the metal oxide film, which is opposite to the surface in contact with the oxide semiconductor film. In addition, the oxide semiconductor film used for the active layer of the transistor is an oxide semiconductor film highly purified to be electrically i-type (intrinsic) through heat treatment in which impurities such as hydrogen, moisture, hydroxyl, and hydride are removed from the oxide semiconductor and oxygen which is one of main component materials of the oxide semiconductor is supplied and is also reduced in a step of removing impurities. | 2015-03-05 |
20150060853 | SEMICONDUCTOR DEVICE - A highly reliable semiconductor device is manufactured by giving stable electric characteristics to a transistor in which an oxide semiconductor film is used. A p-type oxide semiconductor material is contained in an n-type oxide semiconductor film, whereby carriers which are generated in the oxide semiconductor film without intention can be reduced. This is because electrons generated in the n-type oxide semiconductor film without intention are recombined with holes generated in the p-type oxide semiconductor material to disappear. Accordingly, it is possible to reduce carriers which are generated in the oxide semiconductor film without intention. | 2015-03-05 |
20150060854 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME - A semiconductor device includes a main region suitable for performing a first test operation and a second test operation respectively based on a first test signal and a second test signal in a test mode, a first test region electrically connected to the main region and suitable for generating and transferring the first test signal to the main region in the test mode, and a second test region electrically connected to the main region or the first test region with a scribe lane disposed therebetween and suitable for generating and transferring the second test signal to the main region in the test mode. | 2015-03-05 |
20150060855 | SEMICONDUCTOR DEVICE - A semiconductor device includes a plurality of first pads, a plurality of data input and output units suitable for transmitting a data between a plurality of global lines and the plurality of first pads, respectively, a connection control unit suitable for coupling the plurality of first pads to each other in a test operation period, and a test operation unit suitable for controlling the plurality of data input and output units to transmit a test data in a set order through the plurality of first pads coupled to each other in the test operation period. | 2015-03-05 |
20150060856 | BEOL COMPATIBLE FET STRUCTURE - This invention provides structures and a fabrication process for incorporating thin film transistors in back end of the line (BEOL) interconnect structures. The structures and fabrication processes described are compatible with processing requirements for the BEOL interconnect structures. The structures and fabrication processes utilize existing processing steps and materials already incorporated in interconnect wiring levels in order to reduce added cost associated with incorporating thin film transistors in the these levels. The structures enable vertical (3D) integration of multiple levels with improved manufacturability and reliability as compared to prior art methods of 3D integration. | 2015-03-05 |
20150060857 | DISPLAY PANEL AND METHOD OF MANUFACTURING THE SAME - A display panel includes a gate electrode and a gate line on a substrate, a gate insulating layer and an active layer sequentially on the gate electrode and the gate line, a planarization layer which is on the substrate and compensates for a step difference between the substrate, and the gate electrode and the gate line, respectively, source and drain electrodes on the active layer overlapping the gate electrode and spaced apart from each other, a data line on the active layer and crossing the gate line, a protective layer which covers the planarization layer, the source and drain electrodes, and the data line, a contact hole defined in the planarization layer and partially exposing the drain electrode, and a pixel electrode on the protective layer and electrically connected to the drain electrode through the contact hole. | 2015-03-05 |
20150060858 | DISPLAY DEVICE - Provided is a display device, in which: a plurality of spacers placed between a first substrate and a second substrate include a first spacer placed between a first thin film transistor and a second thin film transistor and a second spacer placed between the first thin film transistor and a third thin film transistor; and a distance between a center of the first spacer and a center of a line width of a first data line is smaller than a distance between a center of the second spacer and a center of a line width of a second data line. | 2015-03-05 |
20150060859 | EVALUATION SAMPLE, METHOD OF OBTAINING ETCHING YIELD FUNCTION AND SIMULATION METHOD - In accordance with an embodiment, an evaluation sample includes a substrate and a polycrystalline film on the substrate. The polycrystalline film has crystal grains. A specific orientation plane is exposed on the surface of each crystal grain. The orientation planes exhibit random angles to the surface of the substrate. | 2015-03-05 |
20150060860 | ANODE CONNECTION STRUCTURE OF ORGANIC LIGHT-EMITTING DIODE AND MANUFACTURING METHOD THEREOF - The present invention provides an anode connection structure of an organic light-emitting diode and a manufacture method thereof. The structure includes: a thin-film transistor ( | 2015-03-05 |
20150060861 | GaN Misfets with Hybrid AI203 As Gate Dielectric - Some embodiments of the present disclosure relates to a hybrid gate dielectric layer that has good interface and bulk dielectric properties. Surface traps can degrade device performance and cause large threshold voltage shifts in III-N HEMTs. This disclosure uses a hybrid ALD (atomic layer deposited)-oxide layer which is a combination of H2O-based and O3/O2-based oxide layers that provide both good interface and good bulk dielectric properties to the III-N device. The H2O-based oxide layer provides good interface with the III-N surface, whereas the O3/O2-based oxide layer provides good bulk properties. | 2015-03-05 |
20150060862 | SEMICONDUCTOR DEVICE - A semiconductor device includes a substrate; a first inverter disposed on the substrate and receiving a voltage from any one of a bit line and a complementary bit line; a semiconductor layer disposed on the first inverter; and first and third switch devices disposed on the semiconductor layer and adjusting a threshold voltage of the first inverter to a voltage level of any one of the bit line and the complementary bit line. | 2015-03-05 |
20150060863 | ARRAY SUBSTRATE, METHOD FOR FABRICATING THE SAME AND DISPLAY DEVICE - An array substrate, a method for fabricating the same and a display device are disclosed. The array substrate includes a base substrate, and further includes a metal shield layer, a semiconductor layer, a gate insulation layer, a gate metal layer, an interlayer dielectric layer, a source-drain metal layer and a pixel electrode layer sequentially formed on the base substrate. At least one first via hole penetrating to the metal shield layer is formed in the interlayer dielectric layer and the gate insulation layer. The source-drain metal layer is formed in the at least one first via hole and on the interlayer dielectric layer having the at least one first via hole. | 2015-03-05 |
20150060864 | SEMICONDUCTOR DEVICE, DISPLAY DEVICE AND ELECTRONIC DEVICE - When writing a signal current from a current source to a current source circuit, noise occurs in some cases in a wiring through which a current flows, which may cause a potential of the wiring to be outside the normal range. As the potential does not turn back within the normal range easily at this time, writing to the current source circuit is delayed. According to the invention, when the potential becomes outside the normal range due to noise occurring in a wiring through which a current flows when writing a signal current from a current source to a current source circuit, a current is supplied from other than the current source, thereby the potential of the wiring can turn back within the normal range rapidly. | 2015-03-05 |
20150060865 | LIGHT-EMITTING DEVICE AND ELECTRONIC APPARATUS - A light-emitting device includes a drive transistor for controlling the quantity of current supplied to a light-emitting element, a capacitor element electrically connected to a gate electrode of the drive transistor, and an electrical continuity portion for electrically connecting the drive transistor and the light-emitting element, these elements being disposed on a substrate. The electrical continuity portion is disposed on the side opposite to the capacitor element with the drive transistor disposed therebetween. | 2015-03-05 |
20150060866 | THIN FILM TRANSISTOR ARRAY PANEL AND MANUFACTURING METHOD THEREOF - A thin film transistor array panel includes a first insulation substrate, a gate line and a data line which are positioned on the first insulation substrate, are insulated from each other, and cross each other, a thin film transistor connected to the gate line and the data line, an organic film positioned on the thin film transistor, a second passivation layer which is positioned on the organic film and defines a plurality of second openings therein, a common electrode positioned on the second passivation layer, and a pixel electrode positioned in the plurality of second openings, where a thickness of the common electrode is larger than a thickness of the pixel electrode. | 2015-03-05 |
20150060867 | DISPLAY DEVICE AND METHOD FOR MANUFACTURING THE SAME - A display device including a substrate including a display area and a non-display area, wherein the non-display area comprises a gate metal line positioned on the substrate, a gate insulating layer insulating the gate metal layer, a data metal line positioned on the gate insulating layer, and two or more protective layers positioned in a region in which the gate metal line and the data metal line overlap above the data metal line. | 2015-03-05 |
20150060868 | ARRAY SUBSTRATE, METHOD FOR MANUFACTURING THE SAME AND DISPLAY DEVICE - The present disclosure discloses an array substrate including a display area and a data lead area. The display area includes data signal lines and gate lines. The data lead area includes peripheral wirings connecting the data signal lines and wiring terminals. The peripheral wirings include a plurality of metal traces which are corresponding to the data signal lines in a one-to-one manner and manufactured from a same layer as the gate lines. Each of the metal traces is connected to one of the data signal lines which is corresponding to the each of the metal trace. | 2015-03-05 |
20150060869 | SUPPORTING SUBSTRATE FOR MANUFACTURING FLEXIBLE INFORMAITON DISPLAY DEVICE USING TEMPORARY BONDING/DEBONDING LAYER, MANUFACTURING METHOD THEREOF, AND FLEXIBLE INFORMATION DISPLAY DEVICE - Disclosed are a supporting substrate for manufacturing a flexible information display device using a temporary bonding/debonding layer, a manufacturing method thereof, and a flexible information display device. A supporting substrate for manufacturing a flexible information display device, the supporting substrate comprising: a temporary bonding/debonding layer having a thickness in a range of 0.1 nm to 1000 nm and comprising an adhesive material bonded to the supporting substrate through Van der Waals bonding force. Provided is a method capable of economically manufacturing the display device having a high resolution while reviewing a cost competitive force by reducing a device investment cost and improving the yield rate in the flexible flat panel information display device. | 2015-03-05 |
20150060870 | SUPPORTING SUBSTRATE FOR MANUFACTURING FLEXIBLE INFORMATION DISPLAY DEVICE, MANUFACTURING METHOD THEREOF, AND FLEXIBLE INFORMATION DISPLAY DEVICE - Disclosed are a supporting substrate for manufacturing a flexible information display device capable of easily separating the flexible information display device from the supporting substrate without deforming or damaging the flexible information display device, a manufacturing method thereof, and a flexible information display device manufactured thereby. The supporting substrate for manufacturing a flexible information display device includes: a coating layer formed therein with a plurality micro-protrusions formed on the supporting substrate; and a temporary bonding/debonding layer formed on the coating layer and including an adhesive material mechanically interlocked with and bonded to the supporting substrate through Van der Waals bonding force. The method provides a method capable of economically manufacturing the display device having a high resolution while reviewing a cost competitive force by reducing a device investment cost and improving the yield rate in the flexible flat panel information display device. | 2015-03-05 |
20150060871 | THIN FILM TRANSISTOR, SEMICONDUCTOR DEVICE, AND METHOD FOR MANUFACTURING THE SAME - A semiconductor element is operated without being affected even when the substrate is largely affected by heat shrink such as a large substrate. Furthermore, a thin film semiconductor circuit and a thin film semiconductor device each having the semiconductor element. Also, a semiconductor element is operated without being affected even if there is slight mask deviation. In view of them, a plurality of gate electrodes formed so as to overlap a lower concentration impurity region of a semiconductor layer than drain regions on a drain region side. Also, source regions and the drain regions corresponding to the respective gate electrodes are formed so that current flows in opposite directions each other through channel regions corresponding to the gate electrodes. Further, the number of the channel regions in which a current flows in a first direction is equal to the number of the channel regions in which a current flows in a direction opposite to the first direction. | 2015-03-05 |
20150060872 | Encapsulated Semiconductor Device - A semiconductor device includes a carrier and a semiconductor chip disposed over the carrier. The semiconductor chip has a first surface and a second surface opposite to the first surface, wherein the second surface faces the carrier. Further, the semiconductor device includes a pre-encapsulant covering at least partially the second surface of the semiconductor chip and at least partially a side wall surface of the semiconductor chip. The pre-encapsulant has a thermal conductivity of equal to or greater than 10 W/(m·K) and a specific heat capacity of equal to or greater than 0.2 J/(g·K). | 2015-03-05 |
20150060873 | Crystalline Layer for Passivation of III-N Surface - Some embodiments of the present disclosure relates to a crystalline passivation layer for effectively passivating III-N surfaces. Surface passivation of HEMTs reduces or eliminates the surface effects that can otherwise degrade device performance. The crystalline passivation layer reduces the degrading effects of surface traps and provides a good interface between a III-nitride surface and an insulator (e.g., gate dielectric formed over the passivation layer). | 2015-03-05 |
20150060874 | FLEXIBLE ELECTRIC DEVICE AND METHOD OF MANUFACTURING THE SAME - A flexible electric device includes a first electrode on a flexible member, at least one semiconductor element on the first electrode, at least one filling region adjacent to the semiconductor element and a second electrode on the semiconductor element. | 2015-03-05 |
20150060875 | SEMICONDUCTOR DEVICE - To realize a transistor of normally-off type having a high mobility and a high breakdown voltage. A compound semiconductor layer is formed over a substrate, has both a concentration of p-type impurities and a concentration of n-type impurities less than 1×10 | 2015-03-05 |
20150060876 | POLARIZATION INDUCED DOPED TRANSISTOR - A nitride-based field effect transistor (FET) comprises a compositionally graded and polarization induced doped p-layer underlying at least one gate contact and a compositionally graded and doped n-channel underlying a source contact. The n-channel is converted from the p-layer to the n-channel by ion implementation, a buffer underlies the doped p-layer and the re-channel, and a drain underlies the buffer. | 2015-03-05 |
20150060877 | OPTOELECTRONIC SEMICONDUCTOR DEVICE WITH BARRIER LAYER - An optoelectronic semiconductor device comprises a barrier layer, a first semiconductor layer on the barrier layer, the first semiconductor layer comprising a first dopant and a second dopant, and a second semiconductor layer beneath the barrier layer, the second semiconductor comprising the second dopant, wherein, in the first semiconductor layer, a concentration of the first dopant is larger than a concentration of the second dopant, and the concentration of the second dopant in the second semiconductor layer is larger than that in the first semiconductor layer. | 2015-03-05 |
20150060878 | Semiconductor Packages Having Multiple Lead Frames and Methods of Formation Thereof - In accordance with an embodiment of the present invention, a semiconductor package includes a first lead frame having a first die paddle, and a second lead frame, which has a second die paddle and a plurality of leads. The second die paddle is disposed over the first die paddle. A semiconductor chip is disposed over the second die paddle. The semiconductor chip has a plurality of contact regions on a first side facing the second lead frame. The plurality of contact regions is coupled to the plurality of leads. | 2015-03-05 |
20150060879 | GaN-Based LED - A GaN-based LED includes a substrate; an epitaxial layer over the substrate; a current spreading layer over a P-type layer; and a P electrode over the current spreading layer. The epitaxial layer includes the P-type layer, a light-emitting area, and an N-type layer. An annular reflecting layer and a metal reflecting layer are formed between the P electrode and the epitaxial layer. The geometric center vertically corresponds to the P electrode; the annular reflecting layer is formed between the current spreading layer and the P-type layer; the metal reflecting layer is formed between the current spreading layer and the P electrode; and a preset distance is arranged between the annular reflecting layer and the metal reflecting layer. The annular reflecting layer and the metal reflecting layer reduce light absorption of the P electrode and improve light extraction efficiency. | 2015-03-05 |
20150060880 | GaN-Based LED - A GaN-based LED includes: a substrate with front and back sides; an epitaxial layer formed over the front side of the substrate and including, from top down, a P-type layer, a light-emitting area, and an N-type layer; a current spreading layer formed over the P-type layer; a P electrode formed over the current spreading layer; a first reflecting layer between the current spreading layer and the epitaxial layer, disposed at a peripheral area of the epitaxial layer in a band-shaped distribution; and a second reflecting layer over the back side the substrate. The band-shaped or annular distribution can increase a probability light extraction of the LED sideways. By controlling the ratio of lights extracted upwards and sideways, the light-emitting distribution evenness can be adjusted and the uneven heat dissipation can be improved. | 2015-03-05 |
20150060881 | SEMICONDUCTOR COMPONENT - A semiconductor component ( | 2015-03-05 |
20150060882 | SILICON CARBIDE SEMICONDUCTOR DEVICE - A silicon carbide semiconductor device includes: a drift layer of the a first conduction type; a guard ring region of a second conduction type formed in annular form in a portion of one surface of the drift layer; a field insulating film formed on the one surface of the drift layer and surrounding the guard ring region; a Schottky electrode covering the guard ring region and the drift layer exposed inside the guard ring region and having an outer peripheral end existing on the field insulating film; and a surface electrode pad on the Schottky electrode, wherein an outer peripheral end of the surface electrode pad comes into contact with the field insulating film over the outer peripheral end of the Schottky electrode. | 2015-03-05 |
20150060883 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - According to one embodiment, a semiconductor device includes a first semiconductor region, a second semiconductor region, a third semiconductor region, a first electrode, a first insulating section, and a second insulating section. The first semiconductor region includes silicon carbide, is of a first conductivity type and includes first and second parts. The second semiconductor region includes silicon carbide, is of a second conductivity type and is provided on the second part. The third semiconductor region includes silicon carbide, is of the first conductivity type and is provided on the second semiconductor region. The first electrode is provided on the first part and the third semiconductor region. The first insulating section is provided on the third semiconductor region and juxtaposed with the first electrode. The second insulating section is provided between the first electrode and the first part and between the first electrode and the first insulating section. | 2015-03-05 |
20150060884 | SEMICONDUCTOR DEVICE - According to one embodiment, a semiconductor device includes a first semiconductor region, a second semiconductor region, a third semiconductor region, and a first electrode. The first semiconductor region is of a first conductivity type. The second semiconductor region is provided on the first semiconductor region, and is of a second conductivity type. The third semiconductor region is provided on the second semiconductor region, and is of the second conductivity type. The third semiconductor region contains a first impurity of the first conductivity type and a second impurity of the second conductivity type, and satisfies 12015-03-05 | |
20150060885 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME - A semiconductor device according to an embodiment includes an i-type or a p-type first diamond semiconductor layer, an n-type second diamond semiconductor layer provided on the first diamond semiconductor layer, a mesa structure and an n-type first diamond semiconductor region provided on the side surface. The mesa structure includes the first diamond semiconductor layer, the second diamond semiconductor layer, a top surface with a plane orientation of ±10 degrees or less from a {100} plane, and a side surface inclined by 20 to 90 degrees with respect to a direction of <011>±20 degrees from the {100} plane. The first diamond semiconductor region is in contact with the second diamond semiconductor layer and has an n-type impurity concentration lower than an n-type impurity concentration of the second diamond semiconductor layer. | 2015-03-05 |
20150060886 | SEMICONDUCTOR SUBSTRATE - A semiconductor substrate has a main surface and formed of single crystal silicon carbide. The main surface includes a central area, which is an area other than the area within 5 mm from the outer circumference. When the central area is divided into square areas of 1 mm×1 mm, in any square area, density of dislocations of which Burgers vector is parallel to <0001> direction is at most 1×10 | 2015-03-05 |
20150060887 | NORMALLY-OFF POWER JFET AND MANUFACTURING METHOD THEREOF - In general, in a semiconductor active element such as a normally-off JFET based on SiC in which an impurity diffusion speed is significantly lower than in silicon, gate regions are formed through ion implantation into the side walls of trenches formed in source regions. However, to ensure the performance of the JFET, it is necessary to control the area between the gate regions thereof with high precision. Besides, there is such a problem that, since a heavily doped PN junction is formed by forming the gate regions in the source regions, an increase in junction current cannot be avoided. The present invention provides a normally-off power JFET and a manufacturing method thereof and forms the gate regions according to a multi-epitaxial method which repeats a process including epitaxial growth, ion implantation, and activation annealing a plurality of times. | 2015-03-05 |
20150060888 | METHOD AND APPARATUS FOR CREATING A W-MESA STREET - A method for fabricating an epitaxial structure includes providing a wafer comprising one or more epitaxial layers. The wafer is divided into dice where the area between the dice are called streets. Each street has a slot formed on either side of the street. The slots penetrate through the epitaxial layer but not the substrate leaving a portion of the epitaxial layer intact between the slots creating a “W” shaped cross section. A protective layer is then formed on the wafer. A laser may be used to singulate the wafer in to individual dice. The laser divides each street between the slots. The barrier walls of the epitaxial layers protect the individual dice from debris created by laser separation. | 2015-03-05 |
20150060889 | SEMICONDUCTOR DEVICE, DIE ATTACH MATERIAL, AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE - Provided is a semiconductor device ( | 2015-03-05 |
20150060890 | Light Emitting Device and Electronic Device - An object is to provide a highly reliable light emitting device which is thin and is not damaged by external local pressure. Further, another object is to manufacture a light emitting device with a high yield by preventing defects of a shape and characteristics due to external stress in a manufacture process. A light emitting element is sealed between a first structure body in which a fibrous body is impregnated with an organic resin and a second structure body in which a fibrous body is impregnated with an organic resin, whereby a highly reliable light emitting device which is thin and has intensity can be provided. Further, a light emitting device can be manufactured with a high yield by preventing defects of a shape and characteristics in a manufacture process. | 2015-03-05 |
20150060891 | OPTOELECTRONICS ASSEMBLY AND METHOD OF MAKING OPTOELECTRONICS ASSEMBLY - An electronics assembly includes a semiconductor die assembly, an enclosure affixed to the semiconductor die assembly, the enclosure defining first and second chambers over the semiconductor die assembly, and first and second optical elements mounted in the first and second chambers, respectively. The semiconductor die assembly includes a semiconductor die encapsulated in a molded material, an encapsulation layer located on the top surface of the semiconductor die, and at least one patterned metal layer and at least one dielectric layer over the encapsulation layer. Conductive pillars extend through the encapsulation layer for electrical connection to the semiconductor die. The encapsulation layer blocks optical crosstalk between the first and second chambers. A method is provided for making the electronics assembly. | 2015-03-05 |
20150060892 | PHOTOCOUPLER - A photocoupler includes: a support substrate; a MOSFET; a light receiving element; a light emitting element; and a bonding layer. The support substrate includes an insulating layer, input and output terminals. The MOSFET is bonded to the support substrate. The MOSFET has a first surface having an operation region. The light receiving element includes p-n junction and is bonded to the MOSFET. The light receiving element has first and second surfaces. The first surface includes a light reception region, a first electrode, and a second electrode. The light emitting element is connected to the input terminal. The light emitting element has first and second surfaces. The first surface includes first and second electrodes. The second surface has a light emitting region. The bonding layer is configured to bond the light emitting element to the light reception region. | 2015-03-05 |
20150060893 | DISPLAY DEVICE INCLUDING SEALANT AND MANUFACTURING METHOD THEREOF - A display device includes a lower substrate; an upper substrate facing the lower substrate; a display element layer in a display area of the lower substrate and including a thin film transistor; and a sealing body in a peripheral area surrounding the display area, having a closed curve shape, and between the lower substrate and the upper substrate, in which the sealing body includes a first portion and a second portion, the first portion and the second portion respectively extending along different directions from each other, and the first portion and the second portion respectively have different deposition structures from each other. | 2015-03-05 |
20150060894 | Light Emitting Device - According to an embodiment, a light emitting device including a substrate, a plurality of semiconductor light emitting elements and a wavelength conversion layer is provided. The semiconductor light emitting elements are provided on the substrate. The wavelength conversion layer covers the semiconductor light emitting elements and converts a wavelength of light emitted from the semiconductor light emitting elements. A first distance between an upper surface of the wavelength conversion layer in a first region between two adjacent semiconductor light emitting elements in the semiconductor light emitting elements and the substrate is shorter than a second distance between the upper surface of the wavelength conversion layer and the substrate in a second region on the two adjacent semiconductor light emitting elements. | 2015-03-05 |
20150060895 | Vertical Light Emitting Device and Manufacturing Method Thereof - A vertical high-voltage light emitting device and a manufacturing method thereof. Polarities of two adjacent light emitting diodes (LEDs) are reversed by means of area laser stripping and die bonding, and the two diodes whose polarities are reversed are disposed on an insulating substrate comprising a bonding metal layer ( | 2015-03-05 |
20150060896 | DISPLAY DEVICE - To suppress a loss of data in a semiconductor device. To provide a display device including a capacitor storing data, a display element performing display in accordance with the data, and switching elements connected to electrodes of the capacitor. In the display device, the voltage is held between the electrodes of the capacitor by turning the switching elements off; thus, the data can be stored even when supplying the power supply is stopped. | 2015-03-05 |
20150060897 | LIGHT EMITTING DEVICE PACKAGE - Embodiments relate to a light emitting device package including a first lead frame and a second lead frame spaced apart from each other, a light emitting device disposed on the first lead frame, a reflecting part disposed on the first lead frame and the second lead frame and a light transmitting part including a lower end part disposed on the reflecting part, the first lead frame and the second lead frame and an upper end part disposed on the lower end part. The upper end part has a side surface vertically aligned with a location of a sidewall between upper and lower ends of the reflecting part. | 2015-03-05 |
20150060898 | METHOD FOR LOW TEMPERATURE BONDING OF ELECTRONIC COMPONENTS - A method for bonding an LED assembly | 2015-03-05 |
20150060899 | SEMICONDUCTOR LIGHT EMITTING DEVICE - A semiconductor light emitting device according to an embodiment includes a first semiconductor layer, a second semiconductor layer, a continuous insulating layer, a first fluorescer layer and a second fluorescer layer. The first semiconductor layer includes a first conductivity-type clad layer, an active layer, and a second conductivity-type clad layer stacked in the first semiconductor layer. The second semiconductor layer includes a first conductivity-type clad layer, an active layer, and a second conductivity-type clad layer stacked in the second semiconductor layer. The continuous insulating layer covers a side surface of the first semiconductor layer, a lower surface of the first semiconductor layer, a side surface of the second semiconductor layer, and a lower surface of the second semiconductor layer. The first fluorescer layer covers an upper surface of the first semiconductor layer. The second fluorescer layer covers an upper surface of the second semiconductor layer. | 2015-03-05 |
20150060900 | Light Emitting Module and Lighting Device - According to one embodiment, there is provided a light emitting module including a plurality of first light emitting elements and a plurality of second light emitting elements. The plurality of first light emitting elements and the plurality of second light emitting elements are arranged side by side on a board in a plurality of rows set in advance. Each of the plurality of first light emitting elements is arranged such that, in each of the plurality of rows, the number of the first light emitting elements arranged adjacent to one another is equal to or smaller than the number set in advance. Among the plurality of rows, there is a row in which the number of the first light emitting elements arranged adjacent to one another is different from the number in the other rows. | 2015-03-05 |
20150060901 | Light Emitting Module and Lighting Device - According to one embodiment, there is provided a light emitting module including a first light emitting element, a first phosphor configured to convert light emitted by the first light emitting element, a second phosphor configured to convert the light emitted by the first light emitting element, a second light emitting element configured to emit light having a color different from the color of the light emitted by the first light emitting element and the color of the light converted by the first phosphor. A light amount of the second light emitting element is a light amount with which an amount of change of a color temperature of light obtained by mixing the light emitted by the first light emitting element, the light converted by the first phosphor, the light converted by the second phosphor, and the light emitted by the second light emitting element is within 400 Kelvin. | 2015-03-05 |
20150060902 | PACKAGE OF LIGHT EMITTING DIODE CHIPS - The present invention provides a package of LED chips. The package comprises a transparent plate having a front surface and a rear surface, a plurality of LED chips disposed on the front surface, two opposite front surface reflective walls disposed on the front surface and located at two opposite outsides of the plurality of LED chips, a front surface phosphor gel filling between the two opposite front surface reflective walls, two opposite rear surface reflective walls disposed on the rear surface and a rear surface phosphor gel filling between the two opposite rear surface reflective walls. The present invention realizes the light of the package of LED chips can be extracted from both the front side and the rear side to enhance the light extraction efficiency. | 2015-03-05 |
20150060903 | MOLDED LED PACKAGE AND METHOD OF MAKING SAME - Packaged light emitting diodes (LEDs) and methods of packaging a LED include providing a first lead having a first recess in a bottom surface and a second lead having a second recess in a bottom surface, placing a LED die over a top surface of at least one of the first and the second leads, electrically connecting the LED die to the first lead and to the second lead, forming a package around the LED die that includes an opening in its upper surface exposing at least the LED die, and separating the package containing the LED die, the first lead and the second lead from a lead frame such that the package contains a first castellation and a second castellation in a side surface of the package, such that the castellations expose the leads and/or a first platable metal which is electrically connected to the leads. | 2015-03-05 |
20150060904 | SEMICONDUCTING STRUCTURE WITH SWITCHABLE EMISSION ZONES, METHOD OF MANUFACTURING SUCH A STRUCTURE AND SEMICONDUCTING DEVICE COMPRISING SUCH A STRUCTURE - The invention relates to a semiconducting structure intended to emit light, comprising a first semiconducting region ( | 2015-03-05 |
20150060905 | LIGHT SOURCE MODULE AND MANUFACTURING METHOD THEREOF, AND BACKLIGHT UNIT - A light source module includes a circuit board, light emitting diode chips mounted on the circuit board by flip-chip bonding or a surface mounting technology (SMT), and a diffusor covering the circuit board and the light emitting diode chips. | 2015-03-05 |
20150060906 | DISPLAY DEVICE WITH CLEARANCE - A display device is provided, in which view-angle dependence of chromaticity of white or an intermediate color may be reduced. The display device includes a pair of opposed substrates, a light blocking layer provided on one of the pair of substrates while having a plurality of openings, and a plurality of self-luminous elements provided on the other of the pair of substrates, each of the self-luminous elements having an emission region facing each of the openings, and having an emission color different from an emission color of another element, at least one self-luminous element being different from other self-luminous elements in clearance in a display plane direction from an end of the emission region to an opening of the light blocking film. | 2015-03-05 |
20150060907 | LED LAMP USING BLUE AND CYAN LEDS AND A PHOSPHOR - Many thousands of micro-LEDs (e.g., 25 microns per side) are deposited on a substrate. Some of the LEDs are formed to emit a peak wavelength of 450 nm (blue), and some are formed to emit a peak wavelength of 490 nm (cyan). A YAG (yellow) phosphor is then deposited on the LEDs, or a remote YAG layer is used. YAG phosphor is most efficiently excited at 450 nm and has a very weak emission at 490 nm The two types of LEDs are GaN based and can be driven at the same current. The ratio of the two types of LEDs is controlled to achieve the desired overall color emission of the LED lamp. The blue LEDs optimally excite the YAG phosphor to produce white light having blue and yellow components, and the cyan LEDs broaden the emission spectrum to increase the CRI of the lamp while improving luminous efficiency. Other embodiments are described. | 2015-03-05 |
20150060908 | Optoelectronic Device with Modulation Doping - An improved heterostructure for an optoelectronic device is provided. The heterostructure includes an active region, an electron blocking layer, and a p-type contact layer. The p-type contact layer and electron blocking layer can be doped with a p-type dopant. The dopant concentration for the electron blocking layer can be at most ten percent the dopant concentration of the p-type contact layer. A method of designing such a heterostructure is also described. | 2015-03-05 |
20150060909 | LIGHT-EMITTING DEVICE AND THE MANUFACTURING METHOD THEREOF - A light-emitting device comprises: a first semiconductor layer; a transparent conductive oxide layer including a diffusion region having a first metal material and a non-diffusion region devoid of the first metal material, wherein the non-diffusion region is closer to the first semiconductor layer than the diffusion region; and a metal layer formed on the transparent conductive oxide layer, wherein the metal layer is pervious to a light emitted from the active layer and comprises a pattern. | 2015-03-05 |
20150060910 | Conductive Transparent Reflector - Methods to improve the reflection of light emitting devices are disclosed. A method consistent with the present disclosure includes forming a light generating layer over a site-isolated region of a substrate. Next, forming a first transparent conductive layer over the light generating layer. Forming a low refractive index material over the first transparent conductive layer, and in time, forming a second transparent conductive layer over the low refractive index material. Subsequently, forming a reflective material layer thereon. Accordingly, methods consistent with the present disclosure may form a plurality of light emitting devices in various site-isolated regions on a substrate. | 2015-03-05 |
20150060911 | OPTOELECTRONIC SEMICONDUCTOR DEVICE AND FABRICATING METHOD THEREOF - An optoelectronic semiconductor device comprises a substrate, at least one solid via plug, at least one optoelectronic semiconductor chip, a phosphor layer and a molding body. The at least one solid via plug penetrates through the substrate. The at least one optoelectronic semiconductor chip has a first electrode aligned to and electrically connected with the solid via plug. The phosphor layer covers at least one surface of the optoelectronic semiconductor chip. The molding body encapsulates the substrate, the optoelectronic semiconductor chip and the phosphor layer. The number of solid valid plugs, substrate surfaces, electrodes, bonding pad on each surface of the substrate for forming each optoelectronic semiconductor device can be, for example, two, respectively. | 2015-03-05 |
20150060912 | LIGHT EMITTING DIODE PACKAGE HAVING ZENER DIODE COVERED BY REFLECTIVE MATERIAL - An exemplary light emitting diode package includes a substrate comprising a first electrode, a second electrode and an insulation layer electrically insulating the first electrode from the second electrode; a light emitting diode is located on the substrate, and electrically connects with the first and second electrodes; a zener diode is located on the substrate, and electrically connects with the first and second electrodes; and a reflecting layer is formed on the zener diode to reflect light emitted from the light emitting diode and toward the zener diode. The disclosure also relates to a method for manufacturing the light emitting diode package. | 2015-03-05 |
20150060913 | LIGHT-EMITTING DIODES AND FABRICATION METHODS THEREOF - A light-emitting diode is provided. The light-emitting diode includes an N-type epitaxial layer, a light-emitting layer disposed on a portion of the N-type epitaxial layer to expose a partial surface of the N-type epitaxial layer, and a P-type epitaxial layer disposed on the light-emitting layer, wherein the P-type epitaxial layer has a ladder-shaped sidewall. The light-emitting diode further includes a P-type electrode disposed on the P-type epitaxial layer and an N-type electrode disposed on the exposed surface of the N-type epitaxial layer. Furthermore, a method of fabricating a light-emitting diode is also provided. The method includes performing an anisotropic-etching process to a P-type epitaxial layer to form a rounded or a right-angled ladder on the sidewall of the P-type epitaxial layer. | 2015-03-05 |
20150060914 | LIGHT-EMITTING ASSEMBLY AND METHOD FOR MANUFACTURING THE SAME - A light-emitting assembly and a method for manufacturing the same are provided. The light-emitting assembly includes a circuit board with a light-emitting element and a plurality of optical microstructures disposed thereon. The optical microstructures adjacent to the light-emitting element absorb or guide a portion of light emitted from the light-emitting element. | 2015-03-05 |
20150060915 | LED PACKAGING STRUCTURE AND METHOD FOR MANUFACTURING THE SAME - A light-emitting diode (LED) packaging structure is provided, which includes a LED stacked layer, a first silicon substrate and a second silicon substrate. The first and second silicon substrates are respectively disposed on two opposite surfaces of the LED stacked layer. The first and second silicon substrates respectively have at least one first hollow portion and at least one second hollow portion, so as to expose the surfaces of a portion of the LED stacked layer. Light emitted by a light-emitting layer may go out through the first and second hollow portions. A method for manufacturing the LED packaging structure is also provided. | 2015-03-05 |
20150060916 | LIGHT SOURCE DEVICE, ILLUMINATING DEVICE COMPRISING THE SAME, AND VEHICLE - A light source device is provided. The light source device comprises a semiconductor light-emitting element; and a wavelength conversion member for converting a wavelength of a light emitted from the semiconductor light-emitting element. The semiconductor light-emitting element has a light-emitting peak wavelength of not less than 380 nanometers and not more than 420 nanometers. The light emitted from the semiconductor light-emitting element has a light energy density of not less than 0.2 kW/cm | 2015-03-05 |
20150060917 | LIGHT EMITTING DEVICE WITH WAVELENGTH CONVERTING SIDE COAT - Embodiments of the invention include a semiconductor light emitting device, a first wavelength converting member disposed on a top surface of the semiconductor light emitting device, and a second wavelength converting member disposed on a side surface of the semiconductor light emitting device. The first and second wavelength converting members include different wavelength converting materials. | 2015-03-05 |
20150060918 | COMPOSITE PARTICLE, METHOD OF PRODUCING SAME, RESIN COMPOSITION CONTAINING THE PARTICLE, REFLECTOR FORMED FROM THE COMPOSITION, AND LIGHT-EMITTING SEMICONDUCTOR DEVICE USING THE REFLECTOR - A composite oxide particle prepared from raw materials comprising: (1) a finely powdered silica having a BET specific surface area of 50 m | 2015-03-05 |
20150060919 | COMPOSITE PARTICLE, METHOD OF PRODUCING SAME, RESIN COMPOSITION CONTAINING THE PARTICLE, REFLECTOR FORMED FROM THE COMPOSITION, AND LIGHT-EMITTING SEMICONDUCTOR DEVICE USING THE REFLECTOR - A composite particle comprises inorganic compound particles that are derived from inorganic particle and are uniformly dispersed and sintered in a matrix phase composed of silica, or comprises silica particles that are uniformly dispersed and sintered in a matrix phase composed of said inorganic compound particles. The composite particle is prepared by sintering a mixture of (1) finely powdered silica having a BET specific surface area of 50 m | 2015-03-05 |
20150060920 | Wiring Substrate and Light Emitting Device - A wiring substrate includes an insulation layer, separated wires formed on a first surface of the insulation layer, a first plating layer formed on a first surface of each of the wires, a reflection layer including a first opening that exposes at least a portion of the first plating layer as a connection pad, and an electronic component mounted on a second surface of each of the wires, which is located on an opposite side of the first surface of each of the wires. The electronic component is embedded in the insulation layer. | 2015-03-05 |
20150060921 | LIGHT EMITTING DEVICE - A light emitting device includes a base member including a resin-molded body having an upper surface, a lower surface and a front surface, and formed with a groove-shaped recess in the front surface across the front surface from the upper surface to the lower surface. A lead can be embedded in the resin-molded body. A light emitting element is provided, and can include a light emitting element chip and a reflecting layer limiting a light-emitting region to a predetermined range. The reflecting layer can be disposed on or over a side surface of the light emitting element. The light emitting element is disposed on a bottom surface of the recess such that the reflecting layer is spaced apart from a side wall of the recess. | 2015-03-05 |
20150060922 | Semiconductor Light Emitting Devices Including Multiple Red Phosphors That Exhibit Good Color Rendering Properties With Increased Brightness - A light emitting device includes a light emitting diode chip (“LED”) that emits light having a dominant wavelength in the blue color range and a recipient luminophoric medium that is configured to down-convert at least some of the light emitted by the LED. The recipient luminophoric medium includes a green phosphor, a yellow phosphor, a first red phosphor having a first dominant wavelength and a second red phosphor having a second dominant wavelength that is different from the first dominant wavelength. | 2015-03-05 |
20150060923 | LIGHT EMITTING DIODE AND METHOD OF FABRICATING THE SAME - A light emitting diode and a method of fabricating the same, the light emitting diode including: a gallium nitride-based compound semiconductor layer; a first metal layer including Mg and disposed in the form of islands that are in ohmic contact with the gallium nitride-based compound semiconductor layer; a second metal layer including Ni, covering the first metal layer, and contacting the gallium nitride-based compound semiconductor layer between the islands of the first metal layer; and a reflective metal layer covering the second metal layer. | 2015-03-05 |
20150060924 | OPTOELECTRONIC DEVICE AND THE MANUFACTURING METHOD THEREOF - An optoelectronic device comprises a semiconductor stack having a first surface, a contact layer having a first pattern on the first surface for ohmically contacting the semiconductor stack, a void in the semiconductor stack and surrounding the contact layer, and a mirror structure on the first surface and covering the contact layer, wherein the first surface has a first portion which is not covered by the contact layer and a second portion covered by the contact layer, and the first portion is rougher than the second portion. | 2015-03-05 |
20150060925 | LIGHT EMITTING DEVICE AND METHOD OF MANUFACTURING THE SAME - Disclosed are a light emitting device and a method of manufacturing the same. The light emitting device includes a substrate; a light emitting structure disposed on the substrate and having a stack structure in which a first conductivity type semiconductor layer, an active layer and a second conductivity type semiconductor layer are stacked; a lens disposed on the light emitting structure; and a first terminal portion and a second terminal portion electrically connected to the first conductivity type semiconductor layer and the second conductivity type semiconductor layer, respectively. At least one of the first and second terminal portions extends from a top surface of the light emitting structure along respective side surfaces of the light emitting structure and the substrate. | 2015-03-05 |
20150060926 | WHITE LED LAMP, BACKLIGHT, LIGHT EMITTING DEVICE, DISPLAY DEVICE AND ILLUMINATION DEVICE - A white LED lamp including: a conductive portion; a light emitting diode chip mounted on the conductive portion, for emitting a primary light having a peak wavelength of 360 nm to 420 nm; a transparent resin layer including a first hardened transparent resin, for sealing the light emitting diode chip; and a phosphor layer covering the transparent resin layer, the phosphor layer being formed by dispersing a phosphor powder into a second hardened transparent resin, and the phosphor powder receiving the primary light and radiating a secondary light having a wavelength longer than that of the primary light. An energy of the primary light contained in the radiated secondary light is 0.4 mW/lm or less. | 2015-03-05 |
20150060927 | LIGHT EMITTING DEVICE, LIGHT EMITTING DEVICE PACKAGE AND LIGHTING SYSTEM INCLUDING THE SAME - A light emitting device is described, including a second conductive type semiconductor layer; an active layer over the second conductive type semiconductor layer; a first conductive type semiconductor layer over the active layer; a second electrode in a first region under the second conductive type semiconductor layer; a current blocking layer including a metal; and a first electrode over the first conductive type semiconductor layer. Further, the first electrode has at least one portion that vertically overlaps the current blocking layer. | 2015-03-05 |
20150060928 | PACKAGED LED DEVICE WITH CASTELLATIONS - Packaged LED devices include a first lead having a first recess in a bottom surface, a second lead having a second recess in a bottom surface, a LED die located over a top surface of at least one of the leads and electrically connected to the leads, and a package located around the LED die, the first lead and the second lead. The package contains an opening in its upper surface exposing at least the LED die. The package also contains a first castellation and a second castellation in a side surface of the package, such that the first castellation exposes at least one of the first lead and a first platable metal which is electrically connected to the first lead, and the second castellation exposes at least one of the second lead and a second platable metal which is electrically connected to the second lead. | 2015-03-05 |
20150060929 | CERAMIC CIRCUIT BOARD AND LED PACKAGE MODULE USING THE SAME - A ceramic circuit board includes a substrate made of Al | 2015-03-05 |
20150060930 | Light Emitting Device - According to an embodiment, a light emitting device includes a heat radiation plate, a semiconductor light emitting element, a mounting substrate section including a ceramic substrate, and first and second metal layers, and a bonding layer. The ceramic substrate is provided between the heat radiation plate and the semiconductor light emitting element. The mounting substrate section contacts the ceramic substrate between the heat radiation plate and the ceramic substrate, and includes a first surface on a side of the heat radiation plate and a side surface intersecting a plane perpendicular to a direction from the heat radiation plate to the semiconductor light emitting element. The bonding layer is provided between the heat radiation plate and the second metal layer, and bonds the heat radiation plate and the second metal layer so as to cover the first surface and to contact a part of the side surface. | 2015-03-05 |
20150060931 | SEMICONDUCTOR PACKAGES AND DISPLAY DEVICES INCLUDING SEMICONDUCTOR PACKAGES - Semiconductor packages are provided. A semiconductor package may include a semiconductor chip. The semiconductor package may include a substrate and first and second conductive regions on the substrate. In some embodiments, the substrate may be a flexible substrate, and the first and second conductive regions may be on the same surface of the flexible substrate. Display devices including semiconductor packages are also provided. In some embodiments, a display device may include a flexible substrate that is bent such that first and second conductive regions thereof are connected to each other via an intervening third conductive region. | 2015-03-05 |
20150060932 | LIQUID-FILLED PACKAGING STRUCTURE OF HEATING COMPONENT - A liquid-filled packaging structure of a heating component includes a main body, at least one heating component and a channel. The main body includes an accommodating space, a first opening connecting with the accommodating space and a second opening connecting with the accommodating space. The heating component is disposed in the accommodating space. The two opposite ends of the channel connect with the first opening and the second opening, respectively, so as to form a circulation loop. The accommodating space and the channel are filled with a liquid. | 2015-03-05 |
20150060933 | SUPPORT SUPPLY APPARATUS AND METHOD FOR SUPPLYING SUPPORT - An apparatus for supplying a support having a clean surface is provided. Alternatively, an apparatus for manufacturing a stack including a support and a remaining portion of a processed member whose one surface layer is separated is provided. A positioning portion, a slit formation portion, and a peeling portion are included. The positioning portion is provided with a first transfer mechanism of a stacked film including a support and a separator and a table for fixing the stacked film. The slit formation portion is provided with a cutter that can form a slit which does not pass through the separator. The peeling portion is provided with a second transfer mechanism and a peeling mechanism extending the separator and then peeling the separator. In addition, a pretreatment portion activating a support surface is included. | 2015-03-05 |
20150060934 | LIGHT EMITTING DEVICE - A side-view type light emitting device having a bottom surface thereof as a light emission surface and one side surface thereof as amounting surface for mounting on amounting substrate includes a stacked semiconductor layer having a first semiconductor layer, an active layer, and a second semiconductor layer which are stacked in that order from a side of the bottom surface; a first connecting electrode exposed from the one side surface and electrically connected to the first semiconductor layer; a metal wire having one end thereof electrically connected to an upper surface of the second semiconductor layer; a second connecting electrode exposed from the one side surface and electrically connected to the other end of the metal wire; and a resin layer which covers at least a part of each of the first semiconductor layer, the second semiconductor layer, the first connecting electrode, the second connecting electrode and the metal wire and which is configured to form an upper surface and side surfaces of the light emitting device. | 2015-03-05 |
20150060935 | LED MODULE - An light emitting diode (LED) module includes a circuit board, a set of LED chips formed on and electrically connected to the circuit board, and an encapsulant arranged on the circuit board and covering the LED chips, a set of first recesses defined in a top surface of the encapsulant. | 2015-03-05 |
20150060936 | PROCESS METHOD AND STRUCTURE FOR HIGH VOLTAGE MOSFETS - This invention discloses a semiconductor power device disposed in a semiconductor substrate. The semiconductor power device comprises a plurality of trenches formed at a top portion of the semiconductor substrate extending laterally across the semiconductor substrate along a longitudinal direction each having a nonlinear portion comprising a sidewall perpendicular to a longitudinal direction of the trench and extends vertically downward from a top surface to a trench bottom surface. The semiconductor power device further includes a trench bottom dopant region disposed below the trench bottom surface and a sidewall dopant region disposed along the perpendicular sidewall wherein the sidewall dopant region extends vertically downward along the perpendicular sidewall of the trench to reach the trench bottom dopant region and pick-up the trench bottom dopant region to the top surface of the semiconductor substrate. | 2015-03-05 |
20150060937 | SEMICONDUCTOR DEVICE - A semiconductor device includes: an FET structure that is formed next to a looped trench on a semiconductor substrate and that has an n | 2015-03-05 |
20150060938 | SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE MANUFACTURING METHOD | 2015-03-05 |
20150060939 | SCR WITH FIN BODY REGIONS FOR ESD PROTECTION - An electrostatic discharge protection circuit is disclosed. A method of manufacturing a semiconductor structure includes forming a semiconductor controlled rectifier including a first plurality of fingers between an n-well body contact and an anode in an n-well, and a second plurality of fingers between a p-well body contact and a cathode in a p-well. | 2015-03-05 |
20150060940 | ELECTRONIC DEVICE - An improvement is achieved in the performance of an electronic device. A first semiconductor device and a second semiconductor device are mounted over the upper surface of a wiring board such that, e.g., in plan view, the orientation of the second semiconductor device intersects the orientation of the first semiconductor device. That is, the first semiconductor device is mounted over the upper surface of the wiring board such that a first emitter terminal and a first signal terminal are arranged along an x-direction in which the pair of shorter sides of the wiring board extend. On the other hand, the second semiconductor device is mounted over the upper surface of the wiring board such that a second emitter terminal and a second signal terminal are arranged along a y-direction in which the pair of longer sides of the wiring board extend. | 2015-03-05 |
20150060941 | Electrostatic Discharge Protection Circuit - A device comprises a high voltage N well and a high voltage P well over an N+ buried layer, a high voltage P-type implanted region in the high voltage N well, a first N+ region over the high voltage P-type implanted region and a P+ region and a second N+ region over the high voltage P well. | 2015-03-05 |
20150060942 | SEMICONDUCTOR DEVICE - Sometimes to warp a group III nitride semiconductor and a silicon by the stress of the group III nitride semiconductor acting on the silicon. A semiconductor device includes a substrate, a buffer layer, and a semiconductor layer. A trench is formed on a sixth face of the semiconductor layer. The trench passes through the semiconductor layer and the buffer layer. The bottom of the trench reaches at least the inside of the substrate. | 2015-03-05 |
20150060943 | NITRIDE-BASED TRANSISTORS AND METHODS OF FABRICATING THE SAME - A method of fabricating a nitride-based transistor includes sequentially forming a first nitride-based semiconductor layer doped with first type dopant, a second nitride-based semiconductor layer doped with at least one of a second type dopant, and a third nitride-based semiconductor layer doped with at least one of the first type dopants. A first trench is formed to penetrate the third and second nitride-based semiconductor layers and to extend into the first nitride-based semiconductor layer. A fourth nitride-based semiconductor layer doped with the first type dopants is formed to fill the first trench. A second trench is formed in the fourth nitride-based semiconductor layer. A gate electrode is formed in the second trench. A source electrode is formed to be electrically connected to at least one of the third and fourth nitride-based semiconductor layers, and a drain electrode is formed to be electrically connected to the first nitride-based semiconductor layer. | 2015-03-05 |
20150060944 | DEVICE STRUCTURE WITH INCREASED CONTACT AREA AND REDUCED GATE CAPACITANCE - A FET structure including epitaxial source and drain regions includes large contact areas and exhibits both low resistivity and low parasitic gate to source/drain capacitance. The source and drain regions are laterally etched to provide recesses for accommodating low-k dielectric material without compromising the contact area between the source/drain regions and their associated contacts. A high-k dielectric layer is provided between the raised source/drain regions and a gate conductor as well as between the gate conductor and a substrate, such as an ETSOI or PDSOI substrate. The structure is usable in electronic devices such as MOSFET devices. | 2015-03-05 |