10th week of 2022 patent applcation highlights part 62 |
Patent application number | Title | Published |
20220077196 | ARRAY SUBSTRATE, METHOD FOR MANUFACTURING SAME, AND DISPLAY DEVICE - An array substrate includes a gate layer, a first insulating layer, a channel layer, a source-drain layer, a second insulating layer, and a common electrode layer that are sequentially stacked, wherein the second insulating lay is provided with via holes formed therein; and the source-drain layer includes a plurality of sources, a plurality of drains, a plurality of data lines and a plurality of common electrode signal lines. The common electrode signal line includes a plurality of common electrode signal line segments, each of the common electrode signal line segments passes through at least one sub-pixel row, and each of the common electrode signal line segments is connected to the common electrode layer through the via hole. | 2022-03-10 |
20220077197 | DISPLAY DEVICE - A display device is provided. The display device may include a first substrate, a first set of light emitting elements, and a second set of light emitting elements. The first substrate may include a first set of holes. Each hole of the first set of holes may extend through the first substrate. Each of the first set of light emitting elements and the second set of light emitting elements may overlap the first substrate. The first set of holes may be positioned between the first set of light emitting elements and the second set of light emitting elements in a plan view of the display device. | 2022-03-10 |
20220077198 | ARRAY SUBSTRATE, MANUFACTURING METHOD THEREOF, AND DISPLAY PANEL - An array substrate, a manufacturing method thereof, and a display panel are provided. The array substrate includes at least one anti-radiation layer including a light incident side and a light-emitting side. The light-emitting side is positioned adjacent to an oxide semiconductor layer, the light incident side is configured to allow high energy light waves to enter the anti-radiation layer, the anti-radiation layer is configured to convert the high energy light waves into visible light, and the light-emitting side is configured to allow the visible light to enter the oxide semiconductor layer, thereby improving light stability of oxide semiconductors. | 2022-03-10 |
20220077199 | SEMICONDUCTOR DISPLAY DEVICE - It is an object of the present invention to provide a semiconductor display device having an interlayer insulating film which can obtain planarity of a surface while controlling film formation time, can control treatment time of heating treatment with an object of removing moisture, and can prevent moisture in the interlayer insulating film from being discharged to a film or an electrode adjacent to the interlayer insulating film. An inorganic insulating film containing nitrogen, which is less likely to transmit moisture compared with an organic resin, is formed so as to cover a TFT. Next, an organic resin film containing photosensitive acrylic resin is applied to the organic is insulting film, and the organic resin film is partially exposed to light to be opened. Thereafter, an inorganic insulting film containing nitrogen, which is less likely to transmit moisture compared with an organic resin, is formed so as to cover the opened organic resin film. Then, in the opening part of the organic resin film, a gate insulating film and the two layer inorganic insulating film containing nitrogen are opened partially by etching, to expose an active layer of the TFT. | 2022-03-10 |
20220077200 | DISPLAY PANEL, MANUFACTURING METHOD THEREOF, AND DISPLAY DEVICE - A display panel includes a base substrate, a bonding pattern, and a planarization layer pattern. The bonding pattern includes one or more conductive blocks. A bonding region is disposed on a surface, distal from the base substrate, of the conductive block. The planarization layer pattern is provided with an opening region and an occlusion region. An orthographic projection of the bonding region onto the base substrate is within an orthographic projection of the opening region onto the base substrate. The planarization layer pattern covers at least part of a side surface of the conductive block. | 2022-03-10 |
20220077201 | METHOD OF MANUFACTURING DISPLAY DEVICE AND DISPLAY DEVICE MANUFACTURED THEREBY - A method of manufacturing a display device includes forming an uncut electrode on a substrate, at least a portion of the uncut electrode being formed in a non-emission area; disposing a first insulating layer to overlap the uncut electrode; removing at least a portion of the first insulating layer in the non-emission area; cutting the at least a portion of the uncut electrode in the non-emission area; disposing light emitting elements including a first light emitting element in an emission area and a second light emitting element in the non-emission area; and disposing a second insulating layer to overlap the emission area and the non-emission area. The second light emitting element is disposed in the non-emission area where the uncut electrode is not disposed. Also provided is a display device manufactured by the method. | 2022-03-10 |
20220077202 | Photodetector - A problem to be solved is to prevent deterioration of a signal-to-noise ratio. A photodetector according to the present invention is a germanium photodetector (Ge PD) that uses germanium or a germanium compound in a light absorption layer, the photodetector including a resistor connected in series with a cathode or an anode of the Ge PD; and a capacitor connected at one end to a connection point between the resistor and a cathode or anode of the Ge PD and grounded at another end, another connection point of the resistor being connected to a bias power supply, wherein to withstand maximum operating optical input power, the value of the resistor is determined such that electric power applied to the Ge PD will be lower than a breakdown threshold. | 2022-03-10 |
20220077203 | IMAGING ELEMENT, FABRICATION METHOD, AND ELECTRONIC EQUIPMENT - The present disclosure relates to an imaging element, a fabrication method, and electronic equipment by which an image having higher picture quality can be imaged. The imaging element includes a first light absorbing film formed in an effective pixel peripheral region, the effective pixel peripheral region being provided so as to enclose an outer side of an effective pixel region in which a plurality of pixels is disposed in a matrix, so as to cover a semiconductor substrate, a microlens layer provided as an upper layer than the first light absorbing film and having a microlens formed so as to condense light for each of the pixels in the effective pixel region, and a second light absorbing film provided as an upper layer than the microlens layer and formed in the effective pixel peripheral region. The present technology can be applied, for example, to a CMOS image sensor. | 2022-03-10 |
20220077204 | IMAGE SENSOR AND METHOD OF FABRICATING THE SAME - An image sensor includes a substrate including a plurality of pixel regions, and a deep isolation pattern in the substrate between the pixel regions. The deep isolation pattern includes a semiconductor pattern penetrating at least a portion of the substrate, and a dielectric pattern disposed between the substrate and the semiconductor pattern. The dielectric pattern includes a first part disposed adjacent to the semiconductor pattern, and a second part disposed between the substrate and the first part. The semiconductor pattern includes a first semiconductor pattern and a second semiconductor pattern. The first semiconductor pattern is disposed between the dielectric pattern and the second semiconductor pattern. The first part of the dielectric pattern includes a material different from a material of the second part of the dielectric pattern. A thickness of the first part of the dielectric pattern is less than a thickness of the second part of the dielectric pattern. | 2022-03-10 |
20220077205 | IMAGING DEVICE - A solid-state imaging device with high productivity and improved dynamic range is provided. In the imaging device including a photoelectric conversion element having an i-type semiconductor layer, functional elements, and a wiring, an area where the functional elements and the wiring overlap with the i-type semiconductor in a plane view is preferably less than or equal to 35%, further preferably less than or equal to 15%, and still further preferably less than or equal to 10% of the area of the i-type semiconductor in a plane view. Plural photoelectric conversion elements are provided in the same semiconductor layer, whereby a process for separating the respective photoelectric conversion elements can be reduced. The respective i-type semiconductor layers in the plural photoelectric conversion elements are separated by a p-type semiconductor layer or an n-type semiconductor layer. | 2022-03-10 |
20220077206 | CMOS IMAGE SENSOR HAVING INDENTED PHOTODIODE STRUCTURE - The present disclosure relates to a CMOS image sensor, and an associated method of formation. In some embodiments, the CMOS image sensor comprises a substrate and a transfer gate disposed from a front-side surface of the substrate. The CMOS image sensor further comprises a photo detecting column disposed at one side of the transfer gate within the substrate. The photo detecting column comprises a doped sensing layer comprising one or more recessed portions along a circumference of the doped sensing layer in parallel to the front-side surface of the substrate. By forming the photo detecting column with recessed portions, a junction interface is enlarged compared to a previous p-n junction interface without recessed portions, and thus a full well capacity of the photodiode structure is improved. | 2022-03-10 |
20220077207 | SOLID-STATE IMAGING DEVICE AND ELECTRONIC APPARATUS - A solid-state imaging device according to an embodiment of the present disclosure includes a mode-switching switch section that, in a first mode, electrically couples a first signal path to a photoelectric conversion section and electrically decouples a second signal path from the photoelectric conversion section, and that, in a second mode, electrically couples both of the first signal path and the second signal path to the photoelectric conversion section. At least the photoelectric conversion section is formed in a first substrate, and at least a second amplification transistor is formed in a second substrate, among the first substrate and the second substrate stacked on each other. | 2022-03-10 |
20220077208 | IMAGE SENSOR - An image sensor comprising a plurality of pixels formed inside and on top of a semiconductor substrate, each pixel comprising: a photosensitive area formed in the semiconductor substrate; a storage area formed in the semiconductor substrate; and a first transistor of transfer between the photosensitive area and the storage area, wherein the first transfer transistor comprises a gate vertically extending in the semiconductor substrate, from a top surface of the semiconductor substrate, inside of an insulating trench delimiting the storage area. | 2022-03-10 |
20220077209 | SEMICONDUCTOR PACKAGE WITH PROTECTIVE MOLD - Provided is a semiconductor package. The semiconductor package includes an image sensor chip including a first surface and a second surface opposite to each other in a first direction; a transparent substrate spaced apart from the second surface of the image sensor chip in a second direction, wherein the transparent substrate includes a first part and a second part with a width different from the first part; an adhesive layer disposed between the second surface of the image sensor chip and the first part of the transparent substrate; and a mold layer on the second part of the transparent substrate, wherein the mold layer comprises side surfaces that extend along the first part of the transparent substrate, and further extend along side surfaces of the adhesive layer and side surfaces of the image sensor chip, and not extending along the first surface of the image sensor chip. | 2022-03-10 |
20220077210 | IMAGE SENSOR PACKAGE - A method of image sensor package fabrication includes forming a recess in a transparent substrate, depositing conductive traces in the recess, inserting an image sensor in the recess so that the image sensor is positioned in the recess to receive light through the transparent substrate, and inserting a circuit board in the recess so that the image sensor is positioned between the transparent substrate and the circuit board. | 2022-03-10 |
20220077211 | IMAGE SENSING DEVICE - An image sensing device includes photoelectric conversion elements structured to convert light into electrical signals, and a color filter layer structured to filter incident light towards the photoelectric conversion elements depending on a wavelength range of the incident light corresponding to colors of the incident light to allow the filtered light to be detected by the photoelectric conversion elements corresponding to the colors of the incident light. The color filter layer includes a plurality of first color filters as part of the different filters and structured to allow light at a wavelength range corresponding to a first color and arranged adjacent to each other. A distance between at least one of the first color filters and a corresponding photoelectric conversion element formed below the at least one of the first color filters is different from a distance between the remaining first color filters and corresponding photoelectric conversion elements, respectively. | 2022-03-10 |
20220077212 | SOLID-STATE IMAGING DEVICE AND ELECTRONIC DEVICE - To provide a solid-state imaging device that can realize further improvement in image quality. Provided is a solid-state imaging device including: a pixel array unit in which pixels having at least a photoelectric conversion unit configured to perform photoelectric conversion are arranged two-dimensionally; a rib formed in an outer peripheral portion outside the pixel array unit and extending above the pixel array unit; a light-shielding material arranged at least in an outer peripheral portion outside the pixel array unit and further arranged below the rib; and a low-reflection material formed so as to cover at least a part of the light-shielding material. The low-reflection material is formed below the rib, on a side of the rib, or below the rib, and on a side of the rib. | 2022-03-10 |
20220077213 | FINGERPRINT IDENTIFICATION MODULE, METHOD FOR MAKING SAME, AND ELECTRONIC DEVICE USING SAME - A fingerprint identification module collimating light reflected by fingertip skin patterns defines a fingerprint identification area and a peripheral area, for identifying fingerprints. The module includes a first light-shielding layer, optical sensors, a second light-shielding layer, a supporting portion, and a gap portion. The first and second light-shielding layers each define through holes (first and second through holes). Each second through hole exposes one optical sensor and is aligned with one first through hole. The supporting portion in the peripheral area bonds the first and second substrates, maintaining a certain distance between the first and second light-shielding layers. The gap portion is in the fingerprint identification area. Light reflected by a fingerprint is collimated by the first through holes, the gap portion, and the second through holes and then received as optical signals by the sensors to realize fingerprint imaging. | 2022-03-10 |
20220077214 | CMOS IMAGE SENSOR STRUCTURE - A semiconductor device includes a device layer, a semiconductor layer, a sensor element, a dielectric layer, a color filter layer, and a micro-lens. The semiconductor layer is over the device layer. The semiconductor layer has a plurality of microstructures thereon. Each of the microstructures has a substantially triangular cross-section. The sensor element is under the microstructures of the semiconductor layer and is configured to sense incident light. The dielectric layer is over the microstructures of the semiconductor layer. The color filter layer is over the dielectric layer. The micro-lens is over the color filter layer. | 2022-03-10 |
20220077215 | PHOTOELECTRIC CONVERSION ELEMENT, SOLID-STATE IMAGING APPARATUS, AND ELECTRONIC DEVICE - To provide a photoelectric conversion element which enables an occupied area to be reduced and conversion efficiency and a dynamic range to be adjusted. The photoelectric conversion element includes: a photoelectric conversion unit configured to convert a light signal into a signal charge; a transfer gate structure which is connected to the photoelectric conversion unit and which is configured to transfer the signal charge; a charge storage region to which the signal charge is transferred by the transfer gate structure; a charge holding unit with a capacitor structure which is electrically connected to the charge storage region and which is configured to store the signal charge; and an amplifying transistor of which a control electrode is electrically connected to the charge storage region. The photoelectric conversion unit, the transfer gate structure, and the charge storage region are provided on a first substrate, the amplifying transistor is provided on a second substrate, and the first substrate and the second substrate are laminated. | 2022-03-10 |
20220077216 | IMAGE SENSOR - An image sensor includes a plurality of unit pixels, each including: a substrate including first and second sides which are opposite to each other, a photoelectric conversion layer in the substrate, and a wiring structure on the first side of the substrate. The wiring structure may include: a first capacitor, a second capacitor spaced from the first capacitor, a plurality of edge vias arranged along edges of the unit pixel, and a plurality of central vias interposed between the first capacitor and the second capacitor. | 2022-03-10 |
20220077217 | SEMICONDUCTOR DEVICE - A semiconductor device includes a substrate, a dielectric layer, a plurality of dielectric patterns and a conductive pad. The substrate includes a first surface and a second surface opposite to the first surface. The dielectric layer is disposed at the first surface of the substrate, and the substrate is disposed between the dielectric layer and the second surface of the substrate. The dielectric patterns are disposed on the dielectric layer and between the first surface and the second surface of the substrate. The conductive pad is inserted between the plurality of dielectric patterns and extended into the dielectric layer. | 2022-03-10 |
20220077218 | SOLID-STATE IMAGING DEVICE - An imaging device includes a first chip. The first chip includes a first pixel and a second pixel. The first pixel includes a first anode region and a first cathode region, and the second pixel includes a second anode region and a second cathode region. The first chip includes a first wiring layer. The first wiring layer includes a first anode electrode, a first anode via coupled to the first anode electrode and the first anode region, and a second anode via coupled to the first anode electrode and the second anode region. | 2022-03-10 |
20220077219 | Photodetector - A problem to be solved is to make plural Ge PDs uniform in sensitivity by heating the Ge PDs with heaters based on photocurrent measurements taken by a current monitor, and thereby curb deterioration in a common-mode rejection ratio. A photodetector according to the present invention is a germanium photodetector (Ge PD) that uses germanium or a germanium compound in a light absorption layer, the photodetector including two or more Ge PDs placed to receive an input differential signal; a current monitor adapted to measure photocurrents of the two or more Ge PDs; resistors adapted to heat the respective Ge PDs; voltage sources connected to the respective resistors and capable of controlling voltage values independently of each other, wherein the voltage sources are connected with the current monitor, and the voltage sources manipulate voltages applied to the heaters such that current values output by the two or more Ge PDs will match each other. | 2022-03-10 |
20220077220 | SOLID-STATE IMAGING DEVICE, DRIVING METHOD THEREFOR, AND ELECTRONIC APPARATUS - The present technology relates to a solid-state imaging device, a driving method therefor, and an electronic apparatus capable of acquiring a signal to detect phase difference and a signal to generate a high dynamic range image at the same time. The solid-state imaging device includes a pixel array unit in which a plurality of pixels that receives light of a same color is arranged under one on-chip lens. The plurality of pixels uses at least one pixel transistor in a sharing manner, some pixels out of the plurality of pixels are set to have a first exposure time, and other pixels are set to have a second exposure time shorter than the first exposure time. The present technology can be applied to, for example, a solid-state imaging device or the like. | 2022-03-10 |
20220077221 | QUANTUM DOT CHANNEL (QDC) QUANTUM DOT GATE TRANSISTORS, MEMORIES AND OTHER DEVICES - This invention includes quantum dot channel (QDC) Si FETs, which detect infrared radiation to serve as photodetectors. GeOx-cladded Ge quantum dots form the quantum dot channel. An assembly of cladded quantum dots, such as Ge and Si, with thin barrier layers (GeOx and SiOx) form a quantum dot superlattice (QDSL). A QDSL exhibits narrow energy widths of sub-bands (or mini-energy bands) with sub-bands separation ranging ˜0.2-0.5 eV. The energy separation depends on the barrier thickness (˜0.5-1 nm) and diameter of quantum dots (3-5 nm). Drain current magnitude in a QDSL layer or quantum dot channel depends on density of electrons in the QD inversion channel, which in turn depends on number of sub-bands participating in the conduction for a given drain voltage VD and gate voltage VG. Infrared photons with energy corresponding to the intra sub-band separation are absorbed as electrons in a lower sub-band make transition to the upper sub-band. | 2022-03-10 |
20220077222 | SYSTEMS, METHODS, AND DEVICES FOR REDUCING OPTICAL AND ELECTRICAL CROSSTALK IN PHOTODIODES - Devices, systems, and methods are provided for reducing electrical and optical crosstalk in photodiodes. A photodiode may include a first layer with passive material, the passive material having no electric field. The photodiode may include a second layer with an absorbing material, the second layer above the first layer. The photodiode may include a diffused region with a buried p-n junction. The photodiode may include an active region with the buried p-n junction and having an electric field greater than zero. The photodiode may include a plateau structure based on etching through the second layer to the first layer, the etching performed at a distance of fifteen microns or less from the buried p-n junction. | 2022-03-10 |
20220077223 | PROCESSES, ARTICLES AND APPARATUS THAT INCORPORATE SEMICONDUCTOR SWITCHES AND DRIVE CIRCUITRY ON COMPOUND SEMICONDUCTOR CHIPLETS - This invention relates to the fabrication of semiconductor devices using released elements of a semiconductor material (chiplets) which are co-integrated with thin film transistors to implement addressing, switching, amplification, memory, low voltage logic, or other electronic functionality. These chiplets are released from their initial substrate and distributed across a larger area to form a complete system as part of the manufacturing process of a final system. | 2022-03-10 |
20220077224 | DISPLAY DEVICE - A display device includes a first substrate including a first substrate, a first connection electrode disposed on the first substrate, and connected to a first transistor, a first spacer disposed on the first connection electrode, and including a conductive material, a first light emitting element disposed on the first spacer, and a second light emitting element disposed on the first substrate, and connected to a second transistor. | 2022-03-10 |
20220077225 | PIXEL AND DISPLAY DEVICE INCLUDING THE SAME - A display device includes a pixel in a display area. The pixel includes a first electrode and a second electrode that are spaced apart from each other, a first insulating layer disposed on the first and second electrodes and including a trench corresponding to a region between the first and second electrodes, light emitting elements disposed in the trench, each of the light emitting elements including a first end portion and a second end portion, a first contact electrode disposed on the first end portion of each of the light emitting elements and the first electrode, and a second contact electrode disposed on the second end portion of each of the light emitting elements and the second electrode. The trench includes a first trench accommodating the light emitting elements, and second trenches disposed in the first trench. | 2022-03-10 |
20220077226 | DISPLAY DEVICE - A display device includes a base substrate having an electrode pad on a front surface thereof, a light emitting device provided on the base substrate and connected to the electrode pad, a first molding configured to cover at least a part of the electrode pad by avoiding an area in which the light emitting device is provided, and a second molding configured to cover the light emitting device and the first molding. | 2022-03-10 |
20220077227 | DISPLAY DEVICE AND REPAIR METHOD THEREFOR - A display device may include: a base layer including a display area and a non-display area; and a plurality of pixels in the display area, and each including a plurality of sub-pixels each including an emission area configured to emit light and a peripheral area around the emission area. The sub-pixels may include: at least one first electrode and at least one second electrode extending in a direction and spaced apart from each other; and a plurality of light emitting elements between a first electrode of the at least one first electrode and a second electrode of the at least one second electrode and configured to emit light. At least one of the first electrode and the second electrode may include at least two first electrode patterns spaced apart from each other, and coupled by at least one first connection pattern in the emission area. | 2022-03-10 |
20220077228 | LIGHT-EMITTING DEVICE AND DISPLAY DEVICE COMPRISING SAME - A light emitting device may include first electrodes and second electrodes that are spaced apart from each other in a first direction, light emitting elements electrically connected between adjacent first and second electrodes among the first and the second electrodes, and a third electrode spaced apart from the first electrodes and the second electrodes. The third electrode may be electrically separated from the first electrodes and the second electrodes. | 2022-03-10 |
20220077229 | DISPLAY PANEL AND DETECTION METHOD THEREFOR, AND DISPLAY DEVICE - Provided are a display panel and a detection method therefor, and a display device. A first substrate of the display panel includes a first base plate and light-emitting elements. A second substrate opposite to the first substrate includes a second base plate and a retaining wall structure. An orthographic projection of the retaining wall structure onto the first substrate is located between adjacent light-emitting elements. The first substrate includes a first electrode, the second substrate includes a second electrode. In a first direction perpendicular to a plane where the display panel is located, the first electrode and the second electrode at least partially overlap as a first overlap, and the retaining wall structure and the first overlap at least partially overlap. The first and second electrodes are electrically connected to first signal terminal and second signal terminal, respectively. | 2022-03-10 |
20220077230 | SEMICONDUCTOR DEVICE - A semiconductor device includes a semiconductor layer, a first electrode on a first surface of the semiconductor layer, a plurality of second electrodes on a second surface of the semiconductor layer, a control electrode between the first electrode and each of the plurality of second electrodes and electrically insulated from the semiconductor layer and each of the plurality of second electrodes, and a resin layer partially covering the second surface of the semiconductor layer and having a plurality of openings through which the respective second electrodes are at least partially exposed. Each of the plurality of openings has rounded corners. The device further includes a sensor element above the second surface of the semiconductor layer and covered by a first part of the resin layer surrounded by the openings. | 2022-03-10 |
20220077231 | INTEGRATION STRUCTURE OF CRYSTAL OSCILIATOR AND CONTROL CIRCUIT AND INTEGRATION METHOD THEREFOR - A structure and method for integrating a crystal resonator with a control circuit are disclosed. A piezoelectric vibrator ( | 2022-03-10 |
20220077232 | INTEGRATED STRUCTURE OF AND INTEGRATED METHOD FOR CRYSTAL RESONATOR AND CONTROL CIRCUIT - A structure and method for integrating a crystal resonator with a control circuit are disclosed. The resonator is formed by forming a lower cavity ( | 2022-03-10 |
20220077233 | SCANDIUM NITRIDE MAGNETIC TUNNEL JUNCTION DEVICE - A magnetic tunnel junction device is disclosed comprising a first device layer comprising a material having a magnetic moment; a second device layer comprising a material having a magnetic moment, e.g., wherein the magnetic moment of the material of the second device layer is different from that of the material of the first device layer; and a barrier layer, e.g., tunnel barrier, having a first interface to the first device layer comprising predominantly of a scandium nitride (ScN) material and having a second interface to the second device layer comprising predominantly of a scandium nitride (ScN) material. | 2022-03-10 |
20220077234 | SEMICONDUCTOR DEVICES AND METHODS OF FORMING SEMICONDUCTOR DEVICES - A semiconductor device may be provided, including a first insulating layer; a second insulating layer arranged over the first insulating layer; a memory structure arranged within a memory region and including a resistance changing memory element within the first insulating layer; and a logic structure arranged within a logic region. In the memory region, the first insulating layer may contact the second insulating layer and in the logic region, the semiconductor device may further include a stop layer arranged between the first insulating layer and the second insulating layer. | 2022-03-10 |
20220077235 | MEMORY DEVICE AND METHOD OF MANUFACTURING THE SAME - A memory device may include an insulating structure including a first surface and a protrusion portion protruding from the first surface in a first direction, a recording material layer on the insulating structure and extending along a protruding surface of the protrusion portion to cover the protrusion portion and extending onto the first surface of the insulating structure, a channel layer on the recording material layer and extending along a surface of the recording material layer, a gate insulating layer on the channel layer; and a gate electrode formed on the gate insulating layer at a location facing a second surface of the insulating structure. The second surface of the insulating structure may be a protruding upper surface of the protrusion portion. | 2022-03-10 |
20220077236 | VERTICAL 3D MEMORY DEVICE AND METHOD FOR MANUFACTURING THE SAME - A vertical 3D memory device may comprise: a substrate including a plurality of conductive contacts each coupled with a respective one of a plurality of digit lines; a plurality of word line plates separated from one another with respective dielectric layers on the substrate, the plurality of word line plates including at least a first set of word lines separated from at least a second set of word lines with a dielectric material extending in a serpentine shape and at least a third set of word lines separated from at least a fourth set of word lines with a dielectric material extending in a serpentine shape; at least one separation layer separating the first set of word lines and the second set of word lines from the third set of word lines and the fourth set of word lines, wherein the at least one separation layer is parallel to both a digit line and a word line; and a plurality of storage elements each formed in a respective one of a plurality of recesses such that a respective storage element is surrounded by a respective word line, a respective digit line, respective dielectric layers, and a conformal material formed on a sidewall of a word line facing a digit line. | 2022-03-10 |
20220077237 | IMAGE SENSORS - An image sensor includes a substrate including a first surface and a second surface, a first transmission gate electrode on the first surface of the substrate, a storage node on the first surface of the substrate and including a first storage gate electrode isolated from direct contact with the first transmission gate electrode, a dielectric layer on the first storage gate electrode, and a semiconductor layer on the dielectric layer. The image sensor may include a first cover insulating layer on the semiconductor layer and vertically overlapping the first transmission gate electrode, and an organic photoelectric conversion layer on an upper surface of the semiconductor layer and an upper surface of the first cover insulating layer. | 2022-03-10 |
20220077238 | PHOTODETECTOR ELEMENT AND IMAGE SENSOR - A photodetector element has a photoelectric conversion layer containing aggregates of semiconductor quantum dots QD1 that contain a metal atom and containing a ligand L1 that is coordinated to the semiconductor quantum dot QD1, and a hole transport layer containing aggregates of semiconductor quantum dots QD2 that contains a metal atom and containing a ligand L2 that is coordinated to the semiconductor quantum dot QD2, the hole transport layer being arranged on the photoelectric conversion layer, where the ligand L2 includes a ligand represented by any one of Formulae (A) to (C). | 2022-03-10 |
20220077239 | COLOR CONVERSION PANEL AND DISPLAY DEVICE INCLUDING THE SAME - A color conversion panel includes a first color filter and a second color filter that are disposed on a substrate, a low refractive index layer disposed on the substrate, the first color filter, and the second color filter, the low refractive index layer including at least one of a first blue pigment and a first blue dye, a first color conversion layer overlapping the first color filter and including a semiconductor nanocrystal, a second color conversion layer overlapping the second color filter and including a semiconductor nanocrystal, and a transmissive layer that overlaps the low refractive index layer. | 2022-03-10 |
20220077240 | DISPLAY DEVICE - A display device including a first sensor part that includes a first trunk portion, a first branch portion connected to the first trunk portion and extending in a direction different from a first direction and a second direction, a second branch portion spaced apart from the first branch portion, and a bridge connecting the first branch portion to the second branch portion. A second sensor part includes a second trunk portion extending in the second direction, and a third branch portion disposed between the first branch portion and the second branch portion. | 2022-03-10 |
20220077241 | DISPLAY DEVICE - A display device includes: a first substrate including a first region, a second region adjacent to the first region, and a third region adjacent to the second region; a plurality of emission layers on the first substrate; a first anti-reflection layer on the plurality of emission layers, and to transmit a first colored light; a second anti-reflection layer on the plurality of emission layers, and to transmit a second colored light and a third colored light that are different from the first colored light; and a second substrate on the first anti-reflection layer and the second anti-reflection layer. | 2022-03-10 |
20220077242 | DISPLAY PANEL, DISPLAY DEVICE, AND METHOD OF MANUFACTURING THE DISPLAY DEVICE - A display panel includes: a substrate including a front display area, and a corner display area at a corner of the display panel; and a display element at the corner display area. The corner display area includes: a first extension area extending in a direction away from the front display area; and a first auxiliary area connected to the first extension area, and extending in a direction away from the front display area. The substrate includes a base layer, and a barrier layer on the base layer, the base layer overlapping with the first extension area and the first auxiliary area, and the barrier layer overlapping with the first extension area and spaced from the first auxiliary area. | 2022-03-10 |
20220077243 | DISPLAY DEVICE AND METHOD OF MANUFACTURING THE DISPLAY DEVICE - A display device includes: a substrate including an opening area, a display area surrounding the opening area, and a non-display area between the opening area and the display area; a first insulating layer on the substrate, the first insulating layer including a first recess or a first opening overlapping the non-display area; a second insulating layer on the first insulating layer, the second insulating layer including a second opening exposing a first upper surface of the first insulating layer between the first recess or the first opening and the opening area; a conductive pattern between the first insulating layer and the second insulating layer, the conductive pattern including a first layer and a second layer; and a display element on the second insulating layer and overlapping the display area, the display element including a first electrode, an emission layer, and a second electrode. | 2022-03-10 |
20220077244 | DISPLAY SUBSTRATE AND MANUFACTURING METHOD THEREOF, AND DISPLAY DEVICE - A display substrate provided. The display substrate includes a pixel defining layer having a plurality of apertures corresponding to the sub pixels of at least two different colors. Orthographic projections of the plurality of apertures on the base substrate each are divided by the orthographic projections of the plurality of first power supply lines on the base substrate into a first portion the sub pixels of the at least two different colors, a first area ratio is a ratio between areas of the first portions of the orthographic projections of the apertures on the base substrate, a second area ratio is a ratio between areas of the second portions of the orthographic projections of the apertures on the base substrate, and a ratio between the first area ratio and the second area ratio is in a range from 0.8 to 1.2. | 2022-03-10 |
20220077245 | DISPLAY DEVICE - A display device includes a plurality of subpixels arranged along a first direction and a second direction crossing the first direction, where each of the subpixels includes an emission area, a plurality of electrodes located in the emission area, extending in the first direction and spaced from one another in the second direction, and a plurality of light-emitting elements located on electrodes spaced from one another in the second direction, and where the subpixels include a plurality of first-type subpixels and a plurality of second-type subpixels, the second-type subpixels having a different number of electrodes in the emission area from the first-type subpixels. | 2022-03-10 |
20220077246 | DISPLAY DEVICE AND METHOD FOR FABRICATING THE SAME - A display device may include a substrate including a display area and a bending area, a buffer layer disposed on the substrate, a first dummy pattern disposed in the bending area on the buffer layer; a first insulating layer disposed on the buffer layer, the first insulating layer exposing an upper surface of the first dummy pattern, a second insulating layer disposed on the first insulating layer, the second insulating layer having an opening exposing an upper surface of the first dummy pattern, a second dummy pattern disposed on the first dummy pattern, and a transmission line disposed on the second dummy pattern. | 2022-03-10 |
20220077247 | ORGANIC LIGHT EMITTING DISPLAY DEVICE AND METHOD OF MANUFACTURING ORGANIC LIGHT EMITTING DISPLAY DEVICE - An organic light emitting display device includes a substrate, an insulation layer structure, a light emitting layer, and an optical module. The substrate has an opening region, a peripheral region surrounding the opening region, and a display region surrounding the peripheral region. An opening is defined through the substrate in the opening region. The insulation layer structure is disposed in the display region and the peripheral region on the substrate. The light emitting layer is disposed on the insulation layer structure, and extends in a first direction from the display region into the opening region. A first opening is defined through the light emitting layer in the peripheral region. The optical module is disposed in the opening of the substrate. | 2022-03-10 |
20220077248 | DISPLAY DEVICE, AND METHOD FOR MANUFACTURING THE SAME - A display device includes a display panel including a display area from which an image is output, and the display area includes a camera area overlapping a camera disposed below a rear face of the display panel. The display device provides an imaging function achieve by the camera. The camera area includes a unit pixel area for displaying an image and a transmissive area for transmitting light therethrough. Thus, a separate area that overlaps the camera and does not display an image does not need to be present in the display area. Accordingly, increase in a bezel width and deformation of the display area due to the camera may be prevented. | 2022-03-10 |
20220077249 | DISPLAY PANEL AND METHOD OF MANUFACTURING THE SAME - An organic light emitting display panel including a first electrode, a second electrode on the first electrode, an organic layer between the first electrode and the second electrode and including at least one light emitting layer, an organic cover layer disposed on the second electrode, a lower layer between the organic cover layer and the second electrode and including a first layer, a second layer, and a third layer, which are different from each other and are sequentially stacked, and an upper layer on the organic cover layer. The first layer contacts the second electrode. The second layer and the third layer each include a silicon compound. | 2022-03-10 |
20220077250 | DISPLAY PANEL AND MANUFACTURING METHOD OF SAME - A display panel and a manufacturing method of the same are provided. The display panel includes an array substrate, a plurality of reflective electrodes located on the array substrate and distributed in an array, isolation units arranged between any two adjacent reflective electrodes, an anode layer comprising first anodes located on each of the reflective electrodes and second anodes located on a side of each of the isolation units away from the array substrate, and a light-emitting functional layer located on the first anode. Each of the first anodes is separated from the adjacent second anodes by the isolation unit. | 2022-03-10 |
20220077251 | OLED PANEL WITH INORGANIC PIXEL ENCAPSULATING BARRIER - Embodiments described herein relate to sub-pixel circuits and methods of forming sub-pixel circuits that may be utilized in a display such as an organic light-emitting diode (OLED) display. The device includes a substrate, adjacent pixel-defining layer (PDL) structures disposed over the substrate and defining sub-pixels of the device, inorganic overhang structures disposed on an upper surface of the PDL structures, and a plurality of sub-pixels. Each sub-pixel includes an anode, an organic light-emitting diode (OLED) material disposed over and in contact with the anode, a cathode disposed over the OLED material and extending under the inorganic overhang structures adjacent to each sub-pixel, and an encapsulation layer disposed over the cathode. The encapsulation layer extends under at least a portion of the inorganic overhang structures and along a sidewall of the inorganic overhang structures. | 2022-03-10 |
20220077252 | METHODS OF FABRICATING OLED PANEL WITH INORGANIC PIXEL ENCAPSULATING BARRIER - Embodiments described herein relate to sub-pixel circuits and methods of forming sub-pixel circuits that may be utilized in a display such as an organic light-emitting diode (OLED) display. The device includes a plurality of sub-pixels, each sub-pixel of the plurality of sub-pixels defined by adjacent pixel-defining layer (PDL) structures with inorganic overhang structures disposed on the PDL structures, each sub-pixel having an anode, organic light-emitting diode (OLED) material disposed on the anode, and a cathode disposed on the OLED material. The device is made by a process including the steps of: depositing the OLED material and the cathode by evaporation deposition, and depositing an encapsulation layer disposed over the cathode. | 2022-03-10 |
20220077253 | DISPLAY DEVICE - A display device includes a bank including an opening defining pixels, light emitting elements disposed in the pixels, a color conversion layer disposed on the light emitting elements in the opening, a capping layer overlapping the color conversion layer, and a color filter layer disposed on the capping layer. The color filter layer includes a low refractive material. | 2022-03-10 |
20220077254 | DISPLAY DEVICE - A display device includes an emission area and a sub-region spaced apart from the emission area in a first direction, electrodes extending in the first direction, disposed across the emission area and the sub-region, and spaced apart from each other in a second direction, a first bank surrounding the emission area and the sub-region, and light emitting elements disposed on the electrodes spaced apart in the second direction in the emission area. The first bank includes trench portions in which a top surface of the first bank is partially depressed. The trench portions are disposed between the emission area and the sub-region. | 2022-03-10 |
20220077255 | ARRAY SUBSTRATE, MANUFACTURE METHOD THEREOF, DISPLAY PANEL AND DISPLAY DEVICE - The present disclosure provides an array substrate, a method for manufacturing the array substrate, a display panel and a display device. The array substrate includes: a substrate; a planarization layer on a side of the substrate; a pixel defining layer configured to define a pixel opening region and located on a side of the planarization layer away from the substrate; an anode in the pixel opening region and on a side of the planarization layer away from the substrate. The array substrate further includes an intermediate insulation layer between the planarization layer and the pixel defining layer. The intermediate insulation layer has a chemical polarity between a chemical polarity of the planarization layer and a chemical polarity of the pixel defining layer. | 2022-03-10 |
20220077256 | DISPLAY DEVICE - A display device includes a subpixel which including a first electrode, a light emitting layer, and a second electrode. The display device further includes a pixel defining layer defining the subpixel, a first total reflection layer overlapping the pixel defining layer, a second total reflection layer disposed on the first total reflection layer, and a planarization layer disposed on the second total reflection layer. A refractive index of the planarization layer is greater than a refractive index of the second total reflection layer, and the refractive index of the second total reflection layer is greater than a refractive index of the first total reflection layer. | 2022-03-10 |
20220077257 | METHODS OF FABRICATING OLED PANEL WITH INORGANIC PIXEL ENCAPSULATING BARRIER - Embodiments described herein relate to sub-pixel circuits and methods of forming sub-pixel circuits that may be utilized in a display such as an organic light-emitting diode (OLED) display. The device includes a plurality of sub-pixels, each sub-pixel of the plurality of sub-pixels defined by adjacent pixel-defining layer (PDL) structures with inorganic overhang structures disposed on the PDL structures, each sub-pixel having an anode, organic light-emitting diode (OLED) material disposed on the anode, and a cathode disposed on the OLED material. The device is made by a process including the steps of: depositing the OLED material and the cathode by evaporation deposition, and depositing an encapsulation layer disposed over the cathode. | 2022-03-10 |
20220077258 | TRANSPARENT DISPLAY APPARATUS - Disclosed is a transparent display apparatus. The transparent display apparatus includes a first substrate including a plurality of pixel areas, a first partition wall surrounding each of the plurality of pixel areas, a filling layer covering the first partition wall and the plurality of pixel areas, and a second substrate coupled to the filling layer. Accordingly, a stress applied to a display panel is reduced, and the peeling of an organic light emitting device and transmission of water are preventing from being spread, thereby enhancing the reliability of the display panel. | 2022-03-10 |
20220077259 | DISPLAY SUBSTRATE, PREPARATION METHOD OF DISPLAY SUBSTRATE AND DISPLAY DEVICE - The disclosure relates to a display substrate, a preparation method of the display substrate and a display device. A contact angle of a material, for defining long sides of pixel regions, of a pixel defining layer is larger than a contact angle of a material, for defining short sides of the pixel regions, of the pixel defining layer. | 2022-03-10 |
20220077260 | DISPLAY DEVICE AND MANUFACTURING METHOD FOR THE SAME - A display device according to an embodiment includes: a substrate; a transistor that is disposed on the substrate; a light emitting diode that is disposed on the substrate, and connected to the transistor; and a passivation layer that is disposed between the transistor and the light emitting diode, wherein a surface step of the passivation layer is within a range of and including 1 nm to 30 nm. | 2022-03-10 |
20220077261 | DISPLAY DEVICE AND MANUFACTURING METHOD THEREOF - An embodiment provides a manufacturing method of a polycrystalline silicon layer, including: forming a first amorphous silicon layer on a substrate; doping an N-type impurity into the first amorphous silicon layer; forming a second amorphous silicon layer on the n-doped first amorphous silicon layer; doping a P-type impurity into the second amorphous silicon layer; and crystalizing the n-doped first amorphous silicon layer and the p-doped second amorphous silicon layer by irradiating a laser beam onto n-doped first amorphous silicon layer and the p-doped second amorphous silicon layer to form a polycrystalline silicon layer. | 2022-03-10 |
20220077262 | DISPLAY APPARATUS - A display apparatus can include a substrate comprising a plurality of subpixels, a display area, and anon-display area; a first insulating layer disposed on the substrate; a plurality of first electrodes disposed on the first insulating layer and disposed at the plurality of subpixels, respectively; a bank disposed between the plurality of subpixels; a hole configured to divide the first insulating layer into an inner first insulating layer portion and an outer first insulating layer portion in the non-display area at a periphery of the display area, the inner first insulating layer portion being closer to the display area than the outer first insulating layer portion; a first layer disposed under the hole between the inner first insulating layer portion and the outer first insulating layer portion; and an organic layer and a second electrode disposed on the plurality of first electrodes. | 2022-03-10 |
20220077263 | DISPLAY DEVICE - A display device includes: a substrate; a polycrystalline semiconductor layer which includes a first electrode, a channel, and a second electrode of a driving transistor disposed on the substrate; a first gate insulating layer disposed on the polycrystalline semiconductor layer; a gate electrode of the driving transistor which is disposed on the first gate insulating layer and overlaps the channel; a lower first scan line disposed on the first gate insulating layer; a second gate insulating layer disposed on the gate electrode and on the lower first scan line; a first lower boost electrode disposed on the second gate insulating layer; a first interlayer-insulating layer disposed on the first lower boost electrode; an oxide semiconductor layer disposed on the first interlayer-insulating layer and including a first upper boost electrode overlapping the first lower boost electrode; and a first connection electrode connecting the gate electrode and the first upper boost electrode. | 2022-03-10 |
20220077264 | DISPLAY SUBSTRATE AND MANUFACTURING METHOD THEREOF AND DISPLAY DEVICE - The present disclosure provides a display substrate including: a base substrate, and a thin film transistor, an oxygen supplementing functional layer and an oxygen containing layer formed on the base substrate. The thin film transistor includes: an active layer in direct contact with the oxygen containing layer, and the active layer includes an oxide semiconductor material. The oxygen supplementing functional layer includes a metal oxide material and serves as a first electrode of the display substrate. The oxygen containing layer is between the oxygen supplementing functional layer and the base substrate. | 2022-03-10 |
20220077265 | DISPLAY PANEL AND DISPLAY APPARATUS - A display panel and a display apparatus are provided. The display panel includes has a display region including an optical component setting region. The optical component setting region includes pixel regions, and a light transmission region is formed between adjacent pixel regions. The display panel includes pixels located in the display region, each pixel includes a pixel circuit and an organic light-emitting element, and the pixel circuit includes transistors. The transistors include first and second reset transistors and a drive transistor. The pixel circuits include first pixel circuit located in the optical component setting region, and a gate of the first reset transistor of the first pixel circuit is electrically connected to a gate of the second reset transistor of the first pixel circuit. | 2022-03-10 |
20220077266 | SEMICONDUCTOR DEVICE INCLUDING A FLEXIBLE SUBSTRATE - A display device includes a substrate having flexibility, a transistor having agate insulating film and further having a semiconductor layer and a gate electrode that sandwich the gate insulating film, the transistor formed in an area where the substrate is bent, and a gate wiring line so formed on the substrate as to be connected to the gate electrode, and the gate electrode has an area that is present in an area where the gate electrode overlaps with the semiconductor layer and is thinner than at least part of the gate wiring line. | 2022-03-10 |
20220077267 | DISPLAY DEVICE AND METHOD OF MANUFACTURING THE SAME - A display device includes a first transistor including a first transistor including a light blocking pattern on a substrate, an active pattern on the light blocking pattern, and a gate electrode on the active pattern, a second transistor configured to provide a data voltage to the first transistor in response to a gate signal, and a storage capacitor electrically connected to the gate electrode and the light blocking pattern, and including a first conductive pattern in a same layer as the light blocking pattern, a second conductive pattern on the first conductive pattern and overlapping the first conductive pattern, a third conductive pattern in a same layer as the gate electrode, overlapping the second conductive pattern, and electrically connected to the first conductive pattern, and a fourth conductive pattern on the third conductive pattern, overlapping the third conductive pattern, and electrically connected to the second conductive pattern. | 2022-03-10 |
20220077268 | DISPLAY SUBSTRATE, DISPLAY PANEL, AND ELECTRONIC DEVICE - The present disclosure provides a display substrate, a display panel including the display substrate, and an electronic device. The display substrate includes: a base substrate; a transistor on the base substrate, wherein the transistor includes a first gate layer; a signal line located on the base substrate and configured to transmit an electrical signal; and a conductive isolation portion located between the transistor and the signal line adjacent to the transistor in a direction parallel to the base substrate, wherein the conductive isolation portion is electrically connected with a DC source signal on the display substrate. | 2022-03-10 |
20220077269 | DISPLAY DEVICE - A display device includes a substrate, a transistor, an interlayer insulating layer, a first conductive line, a pixel electrode, a passivation layer, a common electrode, and a light emitting element layer. The transistor overlaps the substrate. The interlayer insulating layer overlaps the transistor and includes a first groove. The first conductive line is electrically connected to the transistor and is at least partially disposed inside the first groove. The pixel electrode is electrically connected to the transistor and overlaps the first conductive line. The passivation layer is disposed between the pixel electrode and the first conductive line and directly contacts at least one of the pixel electrode and the first conductive line. The common electrode overlaps the pixel electrode. The light emitting element layer is disposed between the common electrode and the pixel electrode. | 2022-03-10 |
20220077270 | DISPLAY DEVICE AND METHOD FOR MANUFACTURING THE SAME - A display device includes a base substrate including a rigid material, a plurality of pixels disposed on a display area of the base substrate, a vertical conductive member disposed through the display area of the base substrate, a first transfer wiring electrically contacting the vertical conductive member and extending in a horizontal direction, and an under-panel driver disposed under the base substrate and electrically connected to the vertical conductive member. | 2022-03-10 |
20220077271 | DISPLAY PANEL AND DISPLAY APPARATUS - A display panel includes a substrate including a first display area, a first side display area, a second side display area, and a corner display area, the corner display area being arranged between the first side display area and the second side display area and surrounding at least a portion of the first display area, a first wiring extending in a first direction in the first display area, a second wiring extending in a second direction in the first display area, a first corner wiring arranged in the corner display area and connected to the first wiring, a second corner wiring arranged in the corner display area and connected to the second wiring, and a pixel circuit arranged in the corner display area, where the first corner wiring and the second corner wiring extend in a first extension direction in the corner display area. | 2022-03-10 |
20220077272 | DISPLAY DEVICE AND MULTI-PANEL DISPLAY DEVICE - A display device includes a plurality of signal lines disposed on the upper surface of the first substrate and electrically connected to the display unit, a plurality of link lines disposed below the first substrate, and a plurality of side lines which is disposed on a side surface of the first substrate and connecting the plurality of signal lines and the plurality of link lines, and each of the plurality of side lines includes a first conductive layer which is disposed on the side surface of the first substrate and is formed of first conductive particles and a second conductive layer which covers the first conductive layer and is formed of second conductive particles having a particle size larger than that of the first conductive particles. Accordingly, the contact resistance of the side line is lowered and the mechanical property is improved while minimizing a bezel area. | 2022-03-10 |
20220077273 | DISPLAY SUBSTRATE AND DISPLAY DEVICE - A display substrate and a display device are provided. The display substrate includes a base substrate, multiple sub-pixels, multiple data lines, a test circuit, multiple data leads, at least one test pad, and at least one first test signal line. The multiple data lines are electrically connected to the multiple sub-pixels, and configured to provide data signals to the multiple sub-pixels. The multiple data leads are electrically connected to the multiple data lines and the test circuit. At least one test pad is located on at least one side of the test circuit. The at least one first test signal line is electrically connected to at least one test pad and the test circuit, and includes at least two conductive layers connected in parallel and electrically connected to each other. | 2022-03-10 |
20220077274 | DISPLAY DEVICE - A display device includes a substrate including a display area and a peripheral area disposed outside of the display area. The display area includes a plurality of pixels. The display device further includes an inorganic insulating layer disposed in the display area. The inorganic insulating layer includes a groove disposed in a region between the plurality of pixels. The display device further includes an organic material layer filling the groove, a first connection wiring, and a second connection wiring. The first connection wiring is disposed on the organic material layer, overlaps the plurality of pixels, and extends in a second direction. The second connection wiring is insulated from the first connection wiring, and extends in a first direction that crosses the second direction. | 2022-03-10 |
20220077275 | DISPLAY DEVICE - A display device includes a substrate including a display area having a first display area and a second display area, and a non-display area extending from the display area; a plurality of first sub-data lines disposed in the first display area; a plurality of second sub-data lines disposed in the second display area to correspond to the plurality of first sub-data lines; a control line including a line portion extending in a direction different from a direction in which the plurality of first sub-data lines and the plurality of second sub-data lines extend; and a plurality of transistors disposed between the plurality of first sub-data lines and the plurality of second sub-data lines and controlled by the control line to connect or disconnect the plurality of first sub-data lines and the plurality of second sub-data lines, thereby reducing power consumption by supplying a data signal only to a driving area during divisional driving. | 2022-03-10 |
20220077276 | ELECTRONIC DEVICE, DISPLAY APPARATUS, DISPLAY SUBSTRATE AND MANUFACTURING METHOD THEREFOR - An electronic device, a display apparatus, a display substrate and a manufacturing method therefor, relating to the technical field of display. The display substrate comprises a driving backplate, a first electrode pattern, a light-emitting layer and a second electrode pattern. The driving backplate is provided with a first driving region and a second driving region, the first electrode pattern is arranged on one side of the driving backplate and comprises a plurality of transparent first electrodes located in the first driving region and second electrodes located in the second driving region, the first electrodes are strip-shaped and are distributed at intervals along the second direction, the light-emitting layer is arranged on one side, away from the driving backplate, of the first electrode pattern. | 2022-03-10 |
20220077277 | TILED DISPLAY DEVICE - Provided is a tiled display device including a first sub-display panel on which a plurality of unit pixels is formed, and a second sub-display panel on which a plurality of unit pixels is formed, and located adjacent to the first sub-display panel, wherein each of the unit pixels includes a display element for emitting colored light, and a plurality of sub-pixels having a pixel circuit for driving the display element, and wherein an arrangement order of sub-pixels in the unit pixels corresponding to a current row, and an arrangement order of the sub-pixels in the unit pixels corresponding to a previous row or a next row, are different from each other. | 2022-03-10 |
20220077278 | DISPLAY DEVICE - A display device according to an embodiment may include a first sub-display panel and a second sub-display panel adjacent to the first sub-display panel in a first direction. The first sub-display panel may include a first pixel adjacent to the second sub-display panel and a first ground line disposed between the first pixel and the second sub-display panel and extending in a second direction crossing the first direction. The second sub-display panel may include a second pixel adjacent to the first sub-display panel and a second ground line disposed between the second pixel and the first sub-display panel and extending in the second direction. | 2022-03-10 |
20220077279 | TILED DISPLAY DEVICE AND METHOD OF MANUFACTURING THE SAME - A tiled display device includes a first display panel including a first display area and a first non-display area adjacent to the first display area, and a second display panel including a second display area and a second non-display area between the second display area and the first non-display area. The first display panel includes a first lower substrate, emitting diodes disposed on the first lower substrate and overlapping the first display area, a first upper substrate including a lower surface facing the first lower substrate, a first black matrix pattern disposed on the lower surface of the first upper substrate and overlapping the first non-display area, and a first photochromic matrix pattern disposed on the lower surface of the first upper substrate, overlapping the first non-display area, and transmitting light. | 2022-03-10 |
20220077280 | MANUFACTURING METHOD OF CAPACITIVE STRUCTURE, AND CAPACITOR - A manufacturing method of a capacitive structure includes: providing a semiconductor base; forming a first mask layer on the semiconductor base, the first mask layer having a plurality of first round hole patterns distributed uniformly; forming first openings distributed uniformly on the semiconductor base by etching based on the first round hole patterns; forming a second mask layer on one side, away from the semiconductor base, of the first openings, and forming a plurality of second round hole patterns on the second mask layer; forming second openings distributed uniformly on the semiconductor base by etching based on the second round hole patterns, and meanwhile continuously etching the first openings; and etching the first openings and the second openings to form capacitive holes, and depositing a lower electrode layer, a dielectric layer and an upper electrode layer within the capacitive holes to form the capacitive structure. | 2022-03-10 |
20220077281 | MANUFACTURING METHOD OF CAPACITIVE STRUCTURE, AND CAPACITOR - A manufacturing method of a capacitive structure includes: providing a semiconductor base; forming a first mask layer on the semiconductor base, the first mask layer having a plurality of first round hole patterns distributed uniformly; forming first openings distributed uniformly on the semiconductor base by etching based on the first round hole patterns; forming a second mask layer on one side, away from the semiconductor base, of the first openings, and forming a plurality of second patterns on the second mask layer; forming second openings distributed uniformly on the semiconductor base by etching based on the second patterns; and etching the first openings and the second openings to form capacitive holes, and depositing a lower electrode layer, a dielectric layer and an upper electrode layer within the capacitive holes to form the capacitive structure. | 2022-03-10 |
20220077282 | Electronic Device Including Doped Regions and a Trench Between the Doped Regions - An electronic device can include doped regions and a trench disposed between the doped regions, wherein the trench can include a conductive member. In an embodiment, a parasitic transistor can include doped regions as drain/source regions and the conductive member as a gate electrode. A semiconductor material can lie along a bottom or sidewall of the trench and be a channel region of the parasitic transistor. The voltage on the gate electrode or the dopant concentration can be selected so that the channel region does not reach inversion during the normal operation of the electronic device. | 2022-03-10 |
20220077283 | THREE-DIMENSIONAL MEMORY DEVICES HAVING ISOLATION STRUCTURE FOR SOURCE SELECT GATE LINE AND METHODS FOR FORMING THE SAME - Embodiments of three-dimensional (3D) memory devices and methods for forming the same are disclosed. In an example, a 3D memory device includes a substrate, a memory stack on the substrate, a plurality of channel structures each extending vertically through the memory stack, and one or more isolation structures. The memory stack includes a plurality of interleaved conductive layers and dielectric layers. An outmost one of the conductive layers toward the substrate is a source select gate line (SSG). Each isolation structure surrounds at least one of the channel structures in a plan view to separate the SSG and the at least one channel structure. | 2022-03-10 |
20220077284 | SEMICONDUCTOR DEVICE - A semiconductor device is provided. The semiconductor device comprising a first fin pattern and a second fin pattern which are separated by a first isolation trench and extend in a first direction, a third fin pattern which is spaced apart from the first fin pattern in a second direction intersecting the first direction and extends in the first direction, a fourth fin pattern which is separated from the third fin pattern by a second isolation trench, a first gate structure which intersects the first fin pattern and has a portion extending along an upper surface of the first fin pattern, a second gate structure which intersects the second fin pattern and has a portion extending along an upper surface of the second fin pattern and a first element isolation structure which fills the second isolation trench and faces a short side of the first gate structure. | 2022-03-10 |
20220077285 | INTEGRATED CIRCUIT DEVICE AND METHOD OF FORMING THE SAME - An integrated circuit (IC) device includes a first region and a second region adjacent to each other along a first direction on a substrate, fin patterns in each of the first and second regions extending along a second direction perpendicular to the first direction; gate electrodes extending along the first direction and intersecting the fin patterns; and an isolation region between the first and second regions, a bottom of the isolation region having a non-uniform height relative to a bottom of the substrate. | 2022-03-10 |
20220077286 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF - A semiconductor device in an embodiment includes a substrate and a transistor. The transistor includes a source layer, a drain layer, a gate insulation film, a gate electrode, a contact plug and a first epitaxial layer. The source layer and the drain layer are provided in surface regions of the substrate, and contain an impurity. The gate insulation film is provided on the substrate between the source layer and the drain layer. The gate electrode is provided on the gate insulation film. The contact plug is provided so as to protrude to the source layer or the drain layer downward of a surface of the substrate. The first epitaxial layer is provided between the contact plug and the source layer or drain layer, and contains both the impurity and carbon. | 2022-03-10 |
20220077287 | NITRIDE SEMICONDUCTOR SUBSTRATE - An epitaxial nitride semiconductor is formed over a buffer layer and over a silicon single crystal substrate. A misfit dislocation layer in the silicon single crystal substrate mitigates distortion due to lattice mismatch generated during epitaxial growth of the nitride semiconductor and thermal distortion due to difference in the thermal expansion coefficient occurring during the cooling process after epitaxial growth of the nitride semiconductor. The resulting nitride semiconductor substrate has excellent crystallinity without the occurrence of cracks or large warpage. | 2022-03-10 |
20220077288 | COMPOUND SEMICONDUCTOR SUBSTRATE - A compound semiconductor substrate has a Si (silicon) substrate, a first Al nitride semiconductor layer which is a graded layer formed on the Si substrate and whose Al concentration decreases as the distance from the Si substrate increases along the thickness direction, a GaN (gallium nitride) layer formed on the first Al nitride semiconductor layer and having a lower average Al concentration than the average Al concentration of the first Al nitride semiconductor layer, and a second Al nitride semiconductor layer formed on the GaN layer and having a higher average Al concentration than the average Al concentration of the GaN layer. The threading dislocation density at any position in the thickness direction within the second Al nitride semiconductor layer is lower than the threading dislocation density at any position in the thickness direction within the first Al nitride semiconductor layer. | 2022-03-10 |
20220077289 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF - Disclosed are a semiconductor device and a manufacturing method thereof. The method includes: providing a semiconductor substrate; forming a first wordline trench structure; forming a first sacrificial layer at the bottom of the first wordline trench structure; filling the first wordline trench structure located in active regions by epitaxial growth; forming a first insulation layer covering the top of the semiconductor substrate and the first wordline trench structure; forming a second wordline trench structure and a fin-type structure in the active regions, a depth of the second wordline trench structure being less than that of the first wordline trench structure, and a projection of the second wordline trench structure in a vertical direction completely overlapping with a projection of the first sacrificial layer in the vertical direction; removing the first sacrificial layer; and filling the first wordline trench structure, the second wordline trench structure and the wordline tunnel. | 2022-03-10 |
20220077290 | Electronic Device Including a Charge Storage Component - A circuit and physical structure can help to counteract non-linear C | 2022-03-10 |
20220077291 | SEMICONDUCTOR STRUCTURE AND FABRICATION METHOD THEREOF - A semiconductor structure and a fabrication method of the semiconductor structure are provided. The method includes providing a substrate, forming a first dielectric layer and a plurality of gate structures, forming source-drain doped regions, and forming a source-drain plug. The first dielectric layer covers surfaces of the gate structure, the source-drain doped region and the source-drain plug. The method also includes forming a first plug in the first dielectric layer, and forming a second dielectric layer on the first dielectric layer. The first plug is in contact with a top surface of one of the source-drain plug and the gate structure. The second dielectric layer covers the first plug. Further, the method includes forming a second plug material film in the first and second dielectric layers. The second plug material film is in contact with the top surface of one of the source-drain plug and the gate structure. | 2022-03-10 |
20220077292 | SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME - A semiconductor device is provided. The semiconductor device includes a substrate comprising an element isolation region and an active region defined by the element isolation region, a fin-type pattern on the active region, the fin-type pattern extending in a first horizontal direction, a gate electrode on the fin-type pattern, the gate electrode extending in a second horizontal direction that crosses the first horizontal direction, a capping pattern on the gate electrode, a source/drain region on at least one side of the gate electrode, a source/drain contact on the source/drain region and electrically connected to the source/drain region, and a filling insulating layer on the source/drain contact, the filling insulating layer having a top surface at a same level as a top surface of the capping pattern, and including a material containing a carbon (C) atom. | 2022-03-10 |
20220077293 | SEMICONDUCTOR DEVICE - A semiconductor device includes first to third electrodes, a semiconductor part, a control electrode and an insulating body. The second electrode is opposite to the first electrode. The semiconductor part is provided between the first electrode and the second electrode. The semiconductor part includes first and second trenches next to each other in a front side facing the second electrode. The second trench has a first width in a first direction directed from the first trench toward the second trench. The third electrode and the control electrode are provided inside the first trench. Another third electrode and the insulating body is provided inside the second trench. The insulating body is positioned in the second trench between said another third electrode and the second electrode. The insulating body has a second width in the first direction. The second width is equal to the first width of the second trench. | 2022-03-10 |
20220077294 | SEMICONDUCTOR DEVICE HAVING AN AIR GAP AND METHOD FOR FABRICATING THE SAME - Disclosed is a semiconductor device for improving a gate induced drain leakage and a method for fabricating the same, and the method may include forming a trench in a substrate, lining a surface of the trench with an initial gate dielectric layer, forming a gate electrode to partially fill the lined trench, forming a sacrificial material spaced apart from a top surface of the gate electrode and to selectively cover a top corner of the lined trench, removing a part of the initial gate dielectric layer of the lined trench which is exposed by the sacrificial material in order to form an air gap, and forming a capping layer to cap a side surface of the air gap, over the gate electrode. | 2022-03-10 |
20220077295 | SEMICONDUCTOR DEVICE - A semiconductor device includes a substrate having an active pattern therein, a gate electrode extending across the active pattern and a source/drain region on the active pattern laterally adjacent the gate electrode. The device further includes a contact structure including a first contact on the source/drain region, a second contact on the first contact and a spacer on sidewalls of the first and second contacts. | 2022-03-10 |