15th week of 2013 patent applcation highlights part 11 |
Patent application number | Title | Published |
20130087722 | ASSEMBLY AND INTERCONNECTION METHOD FOR HIGH-POWER LED DEVICES - An LED array with a plurality of easily replaceable LED assemblies. The LED assemblies are attached to a mounting substrate, e.g., by threaded, electrically insulative fasteners. The LED assemblies are electrically connected in a series by detachable power connect clamps and interconnect clamps. It is emphasized that this abstract is provided to comply with the rules requiring an abstract that will allow a searcher or other reader to quickly ascertain the subject matter of the technical disclosure. It is submitted with the understanding that it will not be used to interpret or limit the scope or meaning of the claims. 37 C.F.R. §1.72(b). | 2013-04-11 |
20130087723 | DOWNHOLE SOURCES HAVING ENHANCED IR EMISSION - Light sources are provided with enhanced low-frequency (e.g., near infrared) emission. Some disclosed embodiments include a filament and at least one re-radiator element. The filament heats the re-radiator element to a steady-state temperature that is at least one quarter of the filament's absolute temperature. As disclosed herein, the increased surface area provided by the re-radiator element provides enhanced IR radiation from the light source. Patterning or texturing of the surface can further increase the re-radiator element's surface area. Various shapes such as disks, collars, tubes are illustrated and can be combined to customize the spectral emission profile of the light source. Some specific embodiments employ a coating on the bulb as the re-radiator element. The coating can be positioned to occlude light from the filament or to augment light from the filament, depending on the particular application. The various re-radiator elements can be positioned inside or outside the bulb. | 2013-04-11 |
20130087724 | Observation Device and Method of Observing - Provided is an observation device and a method of observing capable of clearly obtaining information relating to a boundary part where a medium inside an observation object changes. An observation device ( | 2013-04-11 |
20130087725 | ELECTROMAGNETIC WATER SUPPLY VALVE - An electromagnetic valve. A body includes a valve chest disposed between an inlet and an outlet. A valve seat is opened and closed by a movable core. A lock ring is fitted into the inlet. A finishing member closes the outer end of the inlet, and in cooperation with the stator, forcibly fixes the lock ring and guides the tube to be inserted. A chamber is defined by an extension of the finishing member in the direction away from the inlet. A latch element adjacent to the lock ring limits the deformation of the lock ring in response to changes in the pressure of water. A support element protrudes from the outer circumference of the tube to support the rear end of the latch element. The locking ring is prevented from being deformed, so that the coupling of the tube becomes more structurally stable and secure. | 2013-04-11 |
20130087726 | Electromagnetically Operated Switching Devices And Methods Of Actuation Thereof - An electromagnetically operated switching device comprises an armature ( | 2013-04-11 |
20130087727 | BACK PRESSURE CAPABLE SOLENOID OPERATED DIAPHRAGM PILOT VALVE - A valve assembly comprising an inlet port, an outlet port, and a diaphragm configured to selectively allow communication between the inlet port and the outlet port, the diaphragm including a first side adjacent the ports and a second side opposed to the ports. The valve preferably includes at least one bleed path between the first side and the second side of the diaphragm with a one way flow device configured to allow flow from the first side to the second side of the diaphragm and prevent flow from the second side to the first side of the diaphragm. The valve may include a first bleed path from the inlet port to the second side of the diaphragm and a second bleed path from the outlet port to the second side of the diaphragm. Either bleed path, or both, may comprise a check valve mounted in the diaphragm. | 2013-04-11 |
20130087728 | Spigot Attachment Operated with Foot Control Device - A device for remotely controlling the operation of a spigot of a portable liquid container, the spigot having a shaft member that moves linearly with respect to the spigot body, a button that when engaged compresses a spigot spring and urges the spigot shaft and spigot valve to their open positions. When the button is no longer engaged, the spigot spring decompresses and urges the shaft and spigot members to their closed position. The device includes a spigot control member with a movable actuator member that is connected to a foot control member by means of a flexible cable. When the spigot control member is attached and the foot control member is activated, the flexible cable and the actuator member move to engage the spigot button. The pressure on the spigot button urges the spigot spring, shaft and valve to their open positions. With the spigot members in their open positions, liquid is allowed to flow from the container through the spigot. When the foot control member is no longer activated, the flexible cable and the actuator member of the spigot control member stop engaging the spigot button, and the spigot spring decompresses, urging the button, shaft, and valve to their closed positions. | 2013-04-11 |
20130087729 | TWO SPOOL ENERGY SAVER VALVE - An energy saver valve includes a first spool ( | 2013-04-11 |
20130087730 | VALVE DEVICE - A valve device includes a shaft, a valving element, a housing, a bearing part, and a breathing path. The shaft is driven in its axial direction. The valving element is displaced integrally with the shaft. The housing accommodates the valving element. The bearing part is provided for the housing, and includes a sliding hole, in which an end portion of the shaft is inserted and which supports the shaft slidably in the axial direction, thereby limiting a displacement direction of the shaft and the valving element to the axial direction. The breathing path communicates between a bottom part of the sliding hole and an inside of the housing. | 2013-04-11 |
20130087731 | CLOSURE ASSEMBLY FOR AN INJECTION UNIT OF PLASTIC MATERIAL WITH MICROMETRICAL REGULATION OF THE CLOSURE ROD, AND CORRESPONDING DEVICE FOR REGULATING MICROMETRICALLY AND FIXING A THREADED ELEMENT - Closure assembly ( | 2013-04-11 |
20130087732 | PRESSURE VALVE CONTROLLER INCLUDING A DIAPHRAGM RETENTION DEVICE - A pressure regulating valve controller includes a housing. A piston having a surface portion is arranged in the housing. A spring seat is arranged in the housing adjacent the piston. The spring seat includes a surface section. A diaphragm is arranged in the housing between the surface portion of the piston and the surface section of the spring seat. The diaphragm includes an opening. A diaphragm retention device is arranged in the opening of the diaphragm. The diaphragm retention device is configured and disposed to contact each of the surface portion of the piston and the surface section of the spring seat to reduce forces on the diaphragm. | 2013-04-11 |
20130087733 | GATE VALVE, METHOD FOR RETURNED DRILLING MUD PRESSURE CONTROL AND/OR WELL KILLING, AND USES OF A GATE VALVE - A gate valve is provided for returned drilling mud pressure control and/or well killing. The gate valve includes a flow passage; and a gate member movable for intersecting the flow passage. The gate member includes a gate port which extends from one face to an opposite face of the gate member and is alignable with the flow passage for allowing material in the flow passage to pass through the gate member, and a groove or recess is provided in an inner wall of the gate port, the groove or recess extending from the one face to the opposite face of the gate member. A method is provided for returned drilling mud pressure control and/or well killing, and uses of a gate valve. | 2013-04-11 |
20130087734 | VALVE WITH A TWO-PIECE SEALING GASKET - Valve comprising a gasket interposed between a body ( | 2013-04-11 |
20130087735 | PARTICULATE, EXPANDABLE POLYMER, A METHOD FOR PREPARING THE SAME AS WELL AS THE USE THEREOF - Particulate, expandable polymer which can be processed into a foam having a fine cell structure and a low density and which, in order to improve the thermal insulation value thereof, contains a carbon-based thermal insulation value-increasing material. A method for preparing particulate, expandable polymer as well as to a foam material obtained therewith. | 2013-04-11 |
20130087736 | WATER SWELLABLE POLYMER MATERIALS - The invention provides a method of preparing an aqueous dispersion of polymer encapsulated particulate material, the method comprising: | 2013-04-11 |
20130087737 | NEGATIVE ACTIVE MATERIAL FOR RECHARGEABLE LITHIUM BATTERY, METHOD OF PREPARING SAME, AND RECHARGEABLE LITHIUM BATTERY INCLUDING SAME - Negative active materials for rechargeable lithium batteries, manufacturing methods thereof, and rechargeable lithium batteries including the negative active materials are provided. The negative active material includes a compound represented by the Formula Li | 2013-04-11 |
20130087738 | OPTICAL SWITCH ELEMENT COMPRISING A LIQUID-CRYSTALLINE MEDIUM - The present invention relates to an optical switch element, comprising a liquid-crystalline medium for the temperature-dependent regulation of radiant energy flow. The invention furthermore relates to the use of the optical switch element for the regulation of radiant energy flow between interior spaces and the environment and for the regulation of the temperature of interior spaces. The invention furthermore relates to a liquid-crystalline medium, characterised in that it comprises 5-95% of a compound of the formula (I), in particular for use in the optical switch elements according to the invention. | 2013-04-11 |
20130087739 | SCINTILLATOR MATERIAL AND SCINTILLATION DETECTOR - A scintillator material is made of a zinc-oxide single crystal grown on a +C surface or a −C surface of a plate-shaped seed crystal of zinc oxide including a C surface as a main surface. The zinc-oxide single crystal contains In and Li. In response to an incident radiation, the scintillator material emits fluorescence of less than 20-ps fluorescence lifetime. | 2013-04-11 |
20130087740 | INFRARED FLUORESCENT COMPOSITION HAVING POLYVINYL ACETAL BINDER - A composition is disclosed that includes a dye that fluoresces in the infrared region of the electromagnetic spectrum and a polyvinyl acetal binder. The weight ratio of the dye relative to the combined weight of the dye and binder is in a range of 0.001 to 0.025. | 2013-04-11 |
20130087741 | INK HAVING POLYVINYL ACETAL BINDER - An ink is disclosed that includes a solvent, a dye that fluoresces in the infrared region of the electromagnetic spectrum and a polyvinyl acetal binder. The weight ratio of the dye relative to the combined weight of the dye and binder is in a range of 0.001 to 0.025. | 2013-04-11 |
20130087742 | Apparatus And Methods For Saturating And Purifying Syngas - Apparatus and processes for saturating and purifying syngas are provided. In one or more embodiments, the apparatus can include two packed beds through which water and syngas flow countercurrently. In the first bed, the syngas can be at least partially saturated with water, and in the second bed hydrocarbons, byproducts, or both can be removed from the syngas. Processes for saturating and purifying syngas using the apparatus discussed and described herein are also provided. | 2013-04-11 |
20130087743 | BURNER FOR THE GASIFICATION OF A SOLID FUEL - A burner includes a burner front having annular and central openings. The annular opening, for discharging a solid fuel, fluidly connects to a central passage way. The central opening, for discharging an oxygen containing gas, fluidly connects to an annular passage way for passage of oxygen positioned co-axial with the central passage way. The central passage way has a downstream part and a diameter that increases over a first length and subsequently decreases over a second length terminating at the burner front. Inside the downstream part a hollow member is positioned which is closed at one end and has an opening at or near the burner front, and has increasing and decreasing diameters aligned with the increasing and decreasing diameters of the central passage way forming an annular passage. The hollow member fluidly connects with the annular passage way for the oxygen containing gas via one or more connecting conduits. | 2013-04-11 |
20130087744 | INK COMPOSITIONS FOR PHOTOVOLTAICS - Ink compositions for making materials, including photovoltaic absorber materials for solar cells. An ink composition of this invention can contain one or more compounds having the formula M | 2013-04-11 |
20130087745 | SOLUBLE PRECURSORS AND SOLUTION-BASED PROCESSES FOR PHOTOVOLTAICS - Processes and compositions for making photovoltaic absorber materials for thin film solar cells including CIGS are disclosed. The processes and compositions achieve high thickness per pass for efficient manufacturing. Processes include depositing one or more layers of an ink onto a substrate, wherein the ink contains one or more polymeric precursor compounds. An ink for making a photovoltaic absorber material may contain one or more precursor compounds and an additive dissolved in one or more solvents, including hydrocarbon solvents. | 2013-04-11 |
20130087746 | LEAD FREE GLASS FRIT POWDER FOR MANUFACTURING SILICON SOLAR CELL, ITS PRODUCING METHOD, METAL PASTE COMPOSITION CONTAINING THE SAME AND SILICON SOLAR CELL - Disclosed are lead free glass frit powder for manufacturing a silicon solar cell, its producing method, a metal paste composition containing the same and a silicon solar cell. The lead free glass frit powder for manufacturing a silicon solar cell includes Bi | 2013-04-11 |
20130087747 | Quantum Confined Thermoelectric Compositions - Embodiments of the invention relate generally to nanocrystal compositions of matter. In one embodiment, the invention provides a composition comprising: a matrix material; and a plurality of quantum confined semiconductor nanocrystals embedded in the matrix material, wherein the composition has a first grain size of less than approximately 500 nm. | 2013-04-11 |
20130087748 | HETERONUCLEAR RADIOISOTOPE NANOPARTICLE OF CORE-SHELL STRUCTURE AND PREPARATION METHOD THEREOF - Heteronuclear radioisotope nanoparticle of core-shell structure and a preparation method thereof are provided. The Heteronuclear radioisotope nanoparticle of core-shell structure comprising core of two different radioisotopes selected from a group consisting of | 2013-04-11 |
20130087749 | Jack for trailer - A jack includes an outer tube, an inner tube and a lifting device. The outer tube has a positioning member and a driving rod connected thereto. The positioning member is positioned by an object and the driving rod is driven by a crank. The inner tube is located in the outer tube and the lifting device is located on the top of the inner tube so as to lift the outer tube. The positioning member is located on the top of the outer tube and the driving rod is located below the positioning member. The positioning member is positioned by a pivotal device which pivots the positioning member to a desired angle and positions the positioning member. | 2013-04-11 |
20130087750 | ADJUSTABLE LIFTING AND STABILIZATION RESCUE STRUT SYSTEM WITH IMPROVED JACK AND STRUT ENGAGEMENT MEANS - A lifting strut and stabilization system includes a lower outer tubular member in slidable engagement with an upper extendable inner tubular member, a mechanism for receiving and supporting a jack on the outer tubular member, a pin for optionally restraining the upper tubular member from further engagement into the lower tubular member, while allowing unrestrained extension of the upper tubular member from within the lower tubular member, and a removably attached jack having a bracket at its upper end incorporating a saddle or half-hole for engaging a strut lift pin located in a corresponding saddle, half-hole or flat bearing surface located on the upper end of the lower tubular member, the lift pin extending through the saddle holes in the upper tubular member, such that upon actuation of the jack, the upper jack bracket engages the lift pin and extends the upper tubular member from within the lower tubular member. | 2013-04-11 |
20130087751 | THREE-DIMENSIONAL WIRE FLYING SYSTEM - According to one embodiment of the present invention, a wire flying system is constituted as follows: an object is hung on a wire such that said object is moved in a three dimensional space, wherein the length of the wire is adjusted by a winch; the three dimensional space includes a first range, a second range in which the length of the wire is within a preset safe length, and a third range in which the length of the wire is within a preset permissible length; a local safe device delivers information on a deviation from the first range to a control unit, if a local safe logic determines that an operating range of the wire is deviated from only the first range; the control unit controls a motor unit by delivering a software limit signal to a servo system unit, so that the operating range of the wire is set to be within the first range again; the local safe device delivers information on a deviation from the second range to the control unit, if the local safe logic determines that the length of the wire is deviated from the second range; the control unit stops the operation of the motor unit by delivering the software limit signal to the servo system unit; and a limit switch senses a hardware limit state and stops rotation of a drum unit by mechanically stopping the operation of the motor unit such that hardware safe control is performed, if the local safe logic determines that the length of the wire is deviated from the third range. | 2013-04-11 |
20130087752 | AIR LIFT JACK WITH JACK LOCKING MECHANISM - A lift jack includes a base assembly, a base support portion extending from the base assembly, air lift cylinder assembly engaging the base support portion, and a jack locking mechanism. The base support portion has at least one mechanical stop. The locking mechanism is securedly connected to the base assembly and has an adjustable extending member for engaging the at least one mechanical stop. | 2013-04-11 |
20130087753 | Barrier Cable Anchor Rail - A bather cable anchor rail assembly is disclosed. The assembly is adapted to be encapsulated in a concrete column and engage a plurality of cables to provide a barrier between successive columns of concrete. The assembly includes a first rail member and a plurality of threaded connectors. The threaded connectors are adapted to be engaged by a chuck that includes cable grippers adapted to engage one of the cables. The threaded connectors can be attached to the first rail member in the same orientation with a predetermined spacing between the central axis of the plurality of threaded connectors. The first rail member maintains the orientation and predetermined spacing of the threaded connectors and provides support to the concrete column in which it is encapsulated. A barrier cable assembly adapted to form a barrier between a first concrete column and a second concrete column is also disclosed. | 2013-04-11 |
20130087754 | FALL RESTRAINT EQUIPMENT COMPONENTS AND METHOD FOR MANUFACTURING THE SAME - A handrail or a swing gate for fall restraint equipment comprising an outer rail constructed from a single, continuous piece of tubular metal, a midrail constructed from a single, continuous piece of tubular metal, and a toeboard constructed from a single, continuous piece of sheet metal, where the outer rail is constructed to receive portions of the midrail and toeboard for an integral construction. | 2013-04-11 |
20130087755 | ELECTRICALLY ACTUATED SWITCH - A method of manufacturing an electrically actuable switch and comprising: depositing a first electrode on a surface; depositing an active layer or layers on top of said first electrode; and depositing a second electrode on top of said active layer(s), wherein said step of depositing an active layer or layers is performed in an atmosphere into which a reactive gas is introduced, the partial pressure of the reactive gas being varied during the process so as to introduce dopants into the active layer in a concentration which varies across the active layer. | 2013-04-11 |
20130087756 | HEAT SHIELD LINER IN A PHASE CHANGE MEMORY CELL - A memory cell structure and method to form such structure. An example memory cell includes a bottom electrode formed within a substrate. The memory cell also includes a phase change memory element in contact with the bottom electrode. The memory cell includes a liner laterally surrounding the phase change memory element. The liner includes dielectric material that is thermally conductive and electrically insulating. The memory cell includes an insulating dielectric layer laterally surrounding the liner. The insulating dielectric layer includes material having a lower thermal conductivity than that of the liner. | 2013-04-11 |
20130087757 | RESISTIVE MEMORY DEVICE AND METHOD OF MANUFACTURING THE SAME - A method of manufacturing a resistive memory device is provided. A bottom electrode and a cup-shaped electrode connected to the bottom electrode are formed in an insulating layer. A cover layer extends along a first direction is formed and covers a first area surrounded by the cup-shaped electrode and exposes a second area and a third area surrounded by the cup-shaped electrode. A sacrificial layer is formed above the insulating layer. A stacked layer extends along a second direction and covers the second area surrounded by the cup-shaped electrode and a portion of the corresponding cover layer is formed. A conductive spacer material layer is formed on the stacked layer and the sacrificial layer. By using the sacrificial layer as an etch stop layer, the conductive spacer material layer is etched to form a conductive spacer at the sidewall of the stacked layer. | 2013-04-11 |
20130087758 | CARBON NANOTUBE LIGHT EMITTING DEVICE, LIGHT SOURCE, AND PHOTO COUPLER - A plurality of electrodes, and carbon nanotubes disposed between the electrodes, at least part of the carbon nanotubes including a metal carbon nanotube are provided. The metal carbon nanotube generates heat upon passing of current to the electrodes and emits light by blackbody radiation, so that the emitted light has a wide emission wavelength region and can be modulated at high speed. This makes it possible to implement a continuum spectrum light source that can be modulated at high speed, which is suitable for use in information communication, electrical and electronic fields. | 2013-04-11 |
20130087759 | Light Emitting Diode (LED) Using Carbon Materials - Carbon-based light emitting diodes (LEDs) and techniques for the fabrication thereof are provided. In one aspect, a LED is provided. The LED includes a substrate; an insulator layer on the substrate; a first bottom gate and a second bottom gate embedded in the insulator layer; a gate dielectric on the first bottom gate and the second bottom gate; a carbon material on the gate dielectric over the first bottom gate and the second bottom gate, wherein the carbon material serves as a channel region of the LED; and metal source and drain contacts to the carbon material. | 2013-04-11 |
20130087760 | SEMICONDUCTOR LIGHT EMITTING DEVICE AND SEMICONDUCTOR WAFER - According to one embodiment, a semiconductor light emitting device includes a first semiconductor layer of a first conductivity type, a second semiconductor layer of a second conductivity type, and a light emitting layer provided between the first semiconductor layer and the second semiconductor layer and configured to emit a light having a peak wavelength of 440 nanometers or more. Tensile strain is applied to the first semiconductor layer. An edge dislocation density of the first semiconductor layer is 5×10 | 2013-04-11 |
20130087761 | SEMICONDUCTOR LIGHT EMITTING DEVICE - According to one embodiment, a semiconductor light emitting device includes n-type and p-type semiconductor layers containing a nitride semiconductor and a light emitting layer. The emitting layer includes a barrier layer containing | 2013-04-11 |
20130087762 | NITRIDE SEMICONDUCTOR WAFER, NITRIDE SEMICONDUCTOR DEVICE, AND METHOD FOR GROWING NITRIDE SEMICONDUCTOR CRYSTAL - According to one embodiment, a nitride semiconductor wafer includes a silicon substrate, a lower strain relaxation layer provided on the silicon substrate, an intermediate layer provided on the lower strain relaxation layer, an upper strain relaxation layer provided on the intermediate layer, and a functional layer provided on the upper strain relaxation layer. The intermediate layer includes a first lower layer, a first doped layer provided on the first lower layer, and a first upper layer provided on the first doped layer. The first doped layer has a lattice constant larger than or equal to that of the first lower layer and contains an impurity of 1×10 | 2013-04-11 |
20130087763 | LIGHT EMITTING DIODE AND METHOD OF MANUFACTURING THE SAME - The inventive concept provides light emitting diodes and methods of manufacturing the same. The light emitting diode may include a first electrode layer, a light emitting layer on the first electrode layer, a second electrode layer on the light emitting layer, and a buffer layer formed on the second electrode layer, the buffer layer having concave-convex patterns increasing extraction efficiency of light generated from the light emitting layer. | 2013-04-11 |
20130087764 | GAN BASED GROUP III-V NITRIDE SEMICONDUCTOR LIGHT-EMITTING DIODE AND METHOD FOR FABRICATING THE SAME - A GaN based III-V nitride semiconductor light-emitting device and a method for fabricating the same are provided. In the GaN based III-V nitride semiconductor light-emitting device including first and second electrodes arranged facing opposite directions or the same direction with a high-resistant substrate therebetween and material layers for light emission or lasing, the second electrode directly contacts a region of the outmost material layer exposed through an etched region of the high-resistant substrate. A thermal conductive layer may be formed on the bottom of the high-resistant substrate to cover the exposed region of the outmost material layer. | 2013-04-11 |
20130087765 | SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD FOR MANUFACTURING THE SAME - A semiconductor light emitting device includes a first semiconductor layer; a second semiconductor layer on the first semiconductor layer; an active layer on the second semiconductor layer; a third semiconductor layer on the active layer; and a fourth semiconductor layer on the third semiconductor layer, wherein the first semiconductor layer has a composition equation of Al | 2013-04-11 |
20130087766 | SCALABLE QUANTUM COMPUTER ARCHITECTURE WITH COUPLED DONOR-QUANTUM DOT QUBITS - A quantum bit computing architecture includes a plurality of single spin memory donor atoms embedded in a semiconductor layer, a plurality of quantum dots arranged with the semiconductor layer and aligned with the donor atoms, wherein a first voltage applied across at least one pair of the aligned quantum dot and donor atom controls a donor-quantum dot coupling. A method of performing quantum computing in a scalable architecture quantum computing apparatus includes arranging a pattern of single spin memory donor atoms in a semiconductor layer, forming a plurality of quantum dots arranged with the semiconductor layer and aligned with the donor atoms, applying a first voltage across at least one aligned pair of a quantum dot and donor atom to control a donor-quantum dot coupling, and applying a second voltage between one or more quantum dots to control a Heisenberg exchange J coupling between quantum dots and to cause transport of a single spin polarized electron between quantum dots. | 2013-04-11 |
20130087767 | PATTERNING CONTACTS IN CARBON NANOTUBE DEVICES - A structure includes a substrate having a carbon nanotube (CNT) disposed over a surface. The CNT is partially disposed within a protective electrically insulating layer. The structure further includes a gate stack disposed over the substrate. A first portion of a length of the CNT not covered by the protective electrically insulating layer passes through the gate stack. Source and drain contacts are disposed adjacent to the gate stack, where second and third portions of the length of CNT not covered by the protective electrically insulating layer are conductively electrically coupled to the source and drain contacts. The gate stack and the source and drain contacts are contained within the protective electrically insulating layer and within an electrically insulating organic planarization layer that is disposed over the protective electrically insulating layer. A method to fabricate a CNT-based transistor is also described. | 2013-04-11 |
20130087768 | HETEROCYCLIC COMPOUND, ORGANIC LIGHT-EMITTING DIODE COMPRISING THE HETEROCYCLIC COMPOUND, AND FLAT PANEL DISPLAY DEVICE COMPRISING THE ORGANIC LIGHT-EMITTING DIODE - A heterocyclic compound represented by Formula 1 below, an organic light-emitting diode including the same, and a flat panel display device including the organic light-emitting diode: | 2013-04-11 |
20130087769 | Organic Light Emitting Display Device - An organic light emitting display device which includes a base member; an organic light emitting display unit provided on one surface of the base member and configured to generate an image; an intermediate layer provided over the one surface of the base member and formed to be in contact with the organic light emitting display unit; and a capping member including a bulkhead member and a first member, wherein one surface of the first member is in contact with the intermediate layer, and the bulkhead member is protruded from an opposite surface of the first member to define a plurality of capping areas. | 2013-04-11 |
20130087770 | Organic Light Emitting Display Device - An organic light emitting display device which includes a base member; an organic light emitting display unit disposed on the base member and configured to generate an image; a sealing layer configured to seal the organic light emitting display unit; a capping substrate disposed on the sealing layer and having a plurality of metal layers, one of the metal layers being in contact with the sealing layer and having at least one groove; and a moisture absorbent provided in the groove. | 2013-04-11 |
20130087771 | ORGANIC MATERIALS AND ORGANIC ELECTROLUMINESCENT APPARATUSES USING THE SAME - Organic materials and organic electroluminescent apparatuses using the same are provided. The structural general formula of the materials is shown below, wherein Ar is selected from residues of C6-C30 fused-ring aromatic hydrocarbons, Ar | 2013-04-11 |
20130087772 | EMISSIVE COMPOUNDS FOR ORGANIC LIGHT-EMITTING DIODES - Disclosed herein are compounds comprising an optionally substituted (2-phenylpyridinato-N,C2′)(2,4-pentanedionato)Pt(II). Some embodiments provide a light-emitting device, comprising: an anode layer; a cathode layer; and a light-emitting layer positioned between, and electrically connected to, the anode layer and the cathode layer, wherein the light-emitting layer comprises a compound disclosed herein. | 2013-04-11 |
20130087773 | Light-Emitting Element, Light-Emitting Device, Electronic Device, Lighting Device, and Pyrene-Based Compound - A highly efficient light-emitting element capable of providing a plurality of emission colors is provided, which does not easily deteriorate and can minimize a decrease in external quantum efficiency even when a light-emitting layer has a stacked structure. A light-emitting device, an electronic device, and a lighting device which have low power consumption and long lifetime are provided. A light-emitting element includes a plurality of light-emitting layers stacked between a pair of electrodes. The light-emitting layers each contain a host material and a guest material. The guest materials of the light-emitting layers are substances which have different HOMO levels but have substantially the same LUMO levels and emit light of different colors. A light-emitting device, an electronic device, and a lighting device are fabricated using the light-emitting element. | 2013-04-11 |
20130087774 | ORGANIC LIGHT EMITTING DIODE LIGHTING EQUIPMENT - An organic light emitting diode lighting equipment includes a transparent substrate main body, a first electrode formed on the substrate main body, a subsidiary electrode formed on the first electrode to partition the first electrode at a predetermined distance, an organic emissive layer formed on the first electrode, and a second electrode formed on the organic emissive layer. The subsidiary electrode has an inclined lateral side facing toward the organic emissive layer. | 2013-04-11 |
20130087775 | Light Emitting Device - The present invention provides a TFT that has a channel length particularly longer than that of an existing one, specifically, several tens to several hundreds times longer than that of the existing one, and thereby allowing turning to an on-state at a gate voltage particularly higher than the existing one and driving, and allowing having a low channel conductance gd. According to the present invention, not only the simple dispersion of on-current but also the normalized dispersion thereof can be reduced, and other than the reduction of the dispersion between the individual TFTs, the dispersion of the OLEDs themselves and the dispersion due to the deterioration of the OLED can be reduced. | 2013-04-11 |
20130087776 | COMPOUND FOR ORGANIC PHOTOELECTRIC DEVICE AND ORGANIC PHOTOELECTRIC DEVICE INCLUDING THE SAME - A compound for an organic photoelectric device, the compound being represented by the following Chemical Formula 1: | 2013-04-11 |
20130087777 | SURFACE LIGHT SOURCE DEVICE AND LIGHTING APPARATUS - A surface light source device including an organic EL element of a double-side emission type and a light output surface structure layer provided on at least one surface of the organic EL element, wherein the light output surface structure layer includes a concavo-convex structure on a surface opposite to the organic electroluminescent element, the concavo-convex structure having flat surface portions parallel to the surface and an inclined surface portion tilted relative to the flat surface portions, and a projected area formed by projecting the inclined surface portion in a direction perpendicular to the flat surface portions onto a plane parallel to the flat surface portions is not more than 0.1 times a total area of the flat surface portions. | 2013-04-11 |
20130087778 | ORGANIC ELECTROLUMINESCENCE ELEMENT AND METHOD FOR MANUFACTURING ORGANIC ELECTROLUMINESCENCE ELEMENT - Disclosed are: an organic electroluminescent element which has high power efficiency, excellent resistance to luminance decrease due to continuous operation and excellent storage stability at high temperatures, while being reduced in chromatically change of color developing light; and a method for manufacturing the organic electroluminescent element. Specifically disclosed is an organic electroluminescent element that has a positive electrode and a negative electrode on a supporting substrate, while comprising an organic layer, which contains at least one light-emitting layer, between the positive electrode and the negative electrode. The organic electroluminescent element is characterized in that at least one layer in the organic layer contains a crown ether compound and a compound having a dibenzofuran skeleton. | 2013-04-11 |
20130087779 | PROCESS AND MATERIALS FOR MAKING CONTAINED LAYERS AND DEVICES MADE WITH SAME - There is provided a process for forming a contained second layer over a first layer, including the steps: forming the first layer having a first surface energy; treating the first layer with a priming material to form a priming layer; exposing the priming layer patternwise with radiation resulting in exposed areas and unexposed areas; developing the priming layer to effectively remove the priming layer from the unexposed areas resulting in a first layer having a pattern of priming layer, wherein the pattern of priming layer has a second surface energy that is higher than the first surface energy; and forming the second layer by liquid depositions on the pattern of priming layer on the first layer. | 2013-04-11 |
20130087780 | GROUP III NITRIDE SEMICONDUCTOR LIGHT EMITTING DIODE - A group III nitride semiconductor light emitting diode is revealed. A layered structure composed of group III nitrides is formed on the substrate through epitaxy growth of a hexagonal wurtzite crystal structure. The layered structure includes a n-type semiconductor layer, a light emitting layer on the n-type semiconductor layer, and a p-type semiconductor layer on the light emitting layer. A first electrode metal pad is formed on the p-type semiconductor layer and a second electrode metal pad on the n-type semiconductor layer. A direction from the first electrode metal pad to the second electrode metal pad is the same with that of C-axis [0001] of the hexagonal wurtzite crystal structure so as to speed up the movement of electron-hole and improve the combination efficiency of electron-hole by the electric field along the direction of C-axis [0001] in the hexagonal wurtzite crystal structure. | 2013-04-11 |
20130087781 | METAL OXIDE THIN FILM TRANSISTOR - A metal oxide thin film transistor (TFT) includes a gate electrode, a gate insulating layer, a metal oxide active layer, a source electrode, and a drain electrode. The gate electrode is formed on a substrate. The gate insulating layer is formed on the substrate and covers the gate electrode. The metal oxide active layer is formed on the gate insulating layer. The drain electrode and the source electrode are formed on two opposite ends of the metal oxide active layer in a spaced-apart manner, in which at least one of the orthographic projection of the source electrode and the orthographic projection of the drain to electrode on the substrate does not overlap the gate electrode. | 2013-04-11 |
20130087782 | OXIDE SEMICONDUCTOR FILM AND SEMICONDUCTOR DEVICE - An object is to suppress occurrence of oxygen deficiency. An oxide semiconductor film is formed using germanium (Ge) instead of part of or all of gallium (Ga) or tin (Sn). At least one of bonds between a germanium (Ge) atom and oxygen (O) atoms has a bond energy higher than at least one of bonds between a tin (Sn) atom and oxygen (O) atoms or a gallium (Ga) atom and oxygen (O) atoms. Thus, a crystal of an oxide semiconductor formed using germanium (Ge) has a low possibility of occurrence of oxygen deficiency. Accordingly, an oxide semiconductor film is formed using germanium (Ge) in order to suppress occurrence of oxygen deficiency. | 2013-04-11 |
20130087783 | METHODS FOR DEPOSITING A SILICON CONTAINING LAYER WITH ARGON GAS DILUTION - Embodiments of the disclosure generally provide methods of forming a silicon containing layers in TFT devices. The silicon can be used to form the active channel in a LTPS TFT or be utilized as an element in a gate dielectric layer, a passivation layer or even an etch stop layer. The silicon containing layer is deposited by a vapor deposition process whereby an inert gas, such as argon, is introduced along with the silicon precursor. The inert gas functions to drive out weak, dangling silicon-hydrogen bonds or silicon-silicon bonds so that strong silicon-silicon or silicon-oxygen bonds remain to form a substantially hydrogen free silicon containing layer. | 2013-04-11 |
20130087784 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF - An oxide semiconductor film is formed over a substrate, a film of a semiconductor other than an oxide semiconductor is formed over the oxide semiconductor film, and then an oxygen atom in the oxide semiconductor film and an atom in the film of a semiconductor are bonded to each other at an interface between the oxide semiconductor film and the film of a semiconductor. Accordingly, the interface can be made continuous. Further, oxygen released from the oxide semiconductor film is diffused into the film of a semiconductor, so that the film of a semiconductor can be oxidized to form an insulating film. The use of the gate insulating film thus formed leads to a reduction in interface scattering of electrons at the interface between the oxide semiconductor film and the gate insulating film; so that a transistor with excellent electric characteristics can be manufactured. | 2013-04-11 |
20130087785 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - An object is to improve field effect mobility of a thin film transistor using an oxide semiconductor. Another object is to suppress increase in off current even in a thin film transistor with improved field effect mobility. In a thin film transistor using an oxide semiconductor layer, by forming a semiconductor layer having higher electrical conductivity and a smaller thickness than the oxide semiconductor layer between the oxide semiconductor layer and a gate insulating layer, field effect mobility of the thin film transistor can be improved, and increase in off current can be suppressed. | 2013-04-11 |
20130087786 | METAL-SEMICONDUCTOR CONVERGENCE ELECTRIC CIRCUIT DEVICES AND ELECTRIC CIRCUIT SYSTEMS USING THE SAME - Provided are metal-semiconductor convergence electric circuit devices. The device includes a semiconductor device, a metal resistor exhibiting resistance increased with an increase in temperature thereof, and an interconnection line connecting the semiconductor device with the metal resistor in series and having a resistance lower than that of the metal resistor. The semiconductor device is configured to exhibit resistance decreased with an increase in temperature thereof and compensate the resistance increase of the metal resistor. | 2013-04-11 |
20130087787 | ELECTRICAL MASK INSPECTION - An apparatus and method for electrical mask inspection is disclosed. A scan chain is formed amongst two metal layers and a via layer. One of the three layers is a functional layer under test, and the other two layers are test layers. A resistance measurement of the scan chain is used to determine if a potential defect exists within one of the vias or metal segments comprising the scan chain. | 2013-04-11 |
20130087788 | DETECTION METHOD FOR SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE, AND SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE - Integrated circuit layers to be stacked on top of each other are formed with a plurality of inspection rectifier device units, respectively. The inspection rectifier device units including rectifier devices are connected between a plurality of connection terminals and a positive power supply lead and a grounding lead and emit light in response to a current. After electrically connecting the plurality of connection terminals to each other, a bias voltage is applied between the positive power supply lead and the grounding lead, and the connection state between the connection terminals is inspected according to a light emission of the inspection rectifier device unit. This makes it possible to inspect, in a short time every time a layer is stacked, whether or not an interlayer connection failure exists in a semiconductor integrated circuit device constructed by stacking a plurality of integrated circuit layers in their thickness direction. | 2013-04-11 |
20130087789 | PHOTOELECTRIC CONVERSION DEVICE - A photoelectric conversion device with improved electric characteristics is provided. The photoelectric conversion device has a structure in which a window layer is formed by a stack of a first silicon semiconductor layer and a second silicon semiconductor layer, and the second silicon semiconductor layer has high carrier concentration than the first silicon semiconductor layer and has an opening. Light irradiation is performed on the first silicon semiconductor layer through the opening without passing through the second silicon semiconductor layer; thus, light absorption loss in the window layer can be reduced. | 2013-04-11 |
20130087790 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - A miniaturized transistor having favorable electric characteristics is provided. The transistor includes an oxide semiconductor layer which is in contact with a source electrode layer on one of side surfaces in a channel length direction and in contact with a drain electrode layer on the other of the side surfaces in the channel length direction. With this structure, an electric field between the source electrode layer and the drain electrode layer is relaxed and a short-channel effect is suppressed. Further, a sidewall layer having conductivity is provided on a side surface of a gate electrode layer in the channel length direction, so that the sidewall layer having conductivity overlaps with the source electrode layer or the drain electrode layer with a gate insulating layer provided therebetween, which enables the transistor to substantially have an L | 2013-04-11 |
20130087791 | DISPLAY DEVICES AND FABRICATION METHODS THEREOF - A display device and a fabrication method thereof are provided. The display device includes a first metal layer disposed on a display area and a peripheral area. An insulating layer covers the first metal layer. A patterned semiconductor layer is disposed on the insulating layer at the display area. A second metal layer is disposed on the patterned semiconductor layer and the insulating layer at the peripheral area. A transparent conductive layer directly covers the second metal layer. A protective layer completely covers the second metal layer, the patterned semiconductor layer and the transparent conductive layer. The protective layer includes a first portion, a second portion and a through hole, wherein the first portion has a height which is higher than a height of the second portion. | 2013-04-11 |
20130087792 | PIXEL STRUCTURE OF REFLECTIVE TYPE ELECTROPHORETIC DISPLAY DEVICE AND METHOD OF MAKING THE SAME - The present invention provides a method of making a pixel structure of a reflective type electrophoretic display device. First, a first metal pattern layer, an insulating layer, a semiconductor pattern layer and a second metal pattern layer are formed sequentially on a substrate. Next, a passivation layer is formed on the substrate, the semiconductor pattern layer and the second metal pattern layer, and an organic photoresist layer is formed on the passivation layer, wherein the organic photoresist layer has a first contact hole exposing the passivation layer. Then, the organic photoresist layer is utilized as a mask to remove the exposed passivation layer and to form a second contact hole in the passivation layer to expose the second metal pattern layer. Subsequently, a third metal pattern layer and a transparent conductive pattern are formed sequentially on the organic photoresist pattern layer and the exposed second metal pattern layer. | 2013-04-11 |
20130087793 | ARRAY SUBSTRATE AND METHOD OF MANUFACTURING THE SAME - An array substrate includes a base substrate and a contact part. The contact part is disposed on the base substrate. The contact part includes a first metal pattern, a disconnection control pattern and a connecting pattern. The second metal pattern is disposed on a layer different from the first metal pattern, the disconnection control pattern overlaps a side surface of the second metal pattern and a connecting pattern is formed on the first and second metal patterns and the disconnection control pattern and connects the first metal pattern with the second metal pattern. | 2013-04-11 |
20130087794 | Thin Film Transistor Substrate and Method of Fabricating the Same - Disclosed are a thin film transistor substrate and a method of fabricating the same in which the number of processes is reduced. The method includes forming a first conductive pattern including gate electrodes and gate lines on a substrate through a first mask process, depositing a gate insulating film and forming a second conductive pattern including a semiconductor pattern, source and drain electrodes and data lines through a second mask process, depositing first and second passivation films and forming pixel contact holes passing through the first and second passivation films and exposing the drain electrodes through a third mask process, and forming a third conductive pattern including a common electrode and a common line and forming a third passivation film formed in an undercut structure with the common electrode through a fourth mask process, simultaneously, and forming a fourth conductive pattern including pixel electrodes through a lift-off process. | 2013-04-11 |
20130087795 | DISPLAY DEVICE, METHOD OF MANUFACTURING THE SAME, AND ELECTRONIC UNIT - A display device includes: a thin film transistor; and a wiring layer; the thin film transistor including a control electrode, a semiconductor layer facing the control electrode, a first electrode made of a light transmissive material and electrically connected to the semiconductor layer, and a second electrode including a metal film having resistance lower than that of the light transmissive material, the second electrode being electrically connected to each of the semiconductor layer and the wiring layer, wherein a difference in ionization tendency between a material configuring the metal film and a conductive material configuring a part or whole of the wiring layer is smaller than a difference in ionization tendency between the light transmissive material and the conductive material. | 2013-04-11 |
20130087796 | Light-Emitting Device and Electric Appliance - An inexpensive light emitting device capable of displaying a bright image and an electric appliance using the light emitting device. In the light emitting device having a pixel portion and a driver circuit formed on one insulating member, all of semiconductor elements for the pixel portion and the driver circuit are formed by n-channel semiconductor elements, thereby enabling the manufacturing process to be simplified. Each of light-emitting elements provided in the pixel portion emits light in such a direction that most of the light travels away from the insulating member, so that substantially the whole of the pixel-forming segment electrode (corresponding to a cathode of an EL element) is formed as an effective light-emitting area. Therefore, a low-priced light-emitting device capable of displaying a bright image can be obtained. | 2013-04-11 |
20130087797 | HIGH LIGHT TRANSMITTANCE IN-PLANE SWITCHING LIQUID CRYSTAL DISPLAY DEVICE AND METHOD FOR MANUFACTURING THE SAME - The present disclosure relates to a high light transmittance in-plan switching liquid crystal display device and a method for manufacturing the same. The liquid crystal display device includes: a substrate; a gate line disposed in horizontal direction on the substrate; a gate insulating layer covering the gate line; a data line disposed in vertical direction on the gate insulating layer; an additional insulating layer on the data line having same size and shape with the data line; a passivation layer covering the additional insulating layer; and a common electrode overlapping with the data line on the passivation layer. According to the present disclosure, the failure due to the parasitic capacitance and the load for driving the display panel are reduced and it is possible to make large and high definition display panel. | 2013-04-11 |
20130087798 | SEMICONDUCTOR DEVICE AND PROCESS FOR PRODUCTION THEREOF - The TFT substrate ( | 2013-04-11 |
20130087799 | BIPOLAR TRANSISTOR MANUFACTURING METHOD, BIPOLAR TRANSISTOR AND INTEGRATED CIRCUIT - Disclosed is a method of manufacturing a bipolar transistor, comprising providing a substrate ( | 2013-04-11 |
20130087800 | THIN FILM TRANSISTOR ARRAY PANEL AND MANUFACTURING METHOD THEREOF - The present invention relates to a thin film transistor array panel and a manufacturing method thereof that prevent disconnection of wiring due to misalignment of a mask, and simplify a process and reduce cost by reducing the number of masks. The thin film transistor array panel according to the disclosure includes a source electrode enclosing an outer part of the first contact hole and formed on the second insulating layer; a drain electrode enclosing an outer part of the second contact hole and formed on the second insulating layer; a first connection electrode connecting the source region of the semiconductor layer and the source electrode through the first contact hole; and a second connection electrode connecting the drain region of the semiconductor layer and the drain electrode through the second contact hole. | 2013-04-11 |
20130087801 | LIQUID CRYSTAL DISPLAY DEVICE AND MANUFACTURING METHOD THEREOF - A break on a video signal line is prevented during patterning on the video signal line. A video signal line, a drain electrode, and a source electrode are simultaneously formed in the same layer. The video signal line includes three layers: a base layer, an AlSi layer, and a cap layer. Conventionally, an alloy having a high etching rate is formed at the boundary between the AlSi layer and the cap layer, causing breakage during patterning on the video signal line. According to the present invention, in the formation of the video signal line, the AlSi layer is formed by sputtering, a TFT is exposed to the atmosphere to form an Al oxide layer on the surface of the AlSi layer, and then the cap layer is formed by sputtering. Thus, the formation of an alloy having a high etching rate on a part of the AlSi layer is prevented, precluding the occurrence of a break on the video signal line. | 2013-04-11 |
20130087802 | THIN FILM TRANSISTOR, FABRICATION METHOD THEREFOR, AND DISPLAY DEVICE - It is an object to increase the mobility of a thin film transistor having an active layer including a microcrystalline semiconductor film. Upon fabricating an inverted staggered type TFT | 2013-04-11 |
20130087803 | MONOLITHICALLY INTEGRATED HEMT AND SCHOTTKY DIODE - An integrated device including a III-nitride HEMT and a Schottky diode includes a substrate comprising a first III-nitride material and a drift region comprising a second III-nitride material coupled to the substrate and disposed adjacent to the substrate along a vertical direction. The integrated device also includes a first barrier layer coupled to the drift region and a channel layer comprising a third III-nitride material having a first bandgap and coupled to the barrier layer. The integrated device further includes a second barrier layer characterized by a second bandgap and coupled to the channel layer and a Schottky contact coupled to the drift region. The second bandgap is greater than the first bandgap. | 2013-04-11 |
20130087804 | SEMICONDUCTOR STRUCTURE AND METHOD OF FORMING THE SAME - A semiconductor structure includes a first III-V compound layer. A second III-V compound layer is disposed on the first III-V compound layer and different from the first III-V compound layer in composition. A carrier channel is located between the first III-V compound layer and the second III-V compound layer. A source feature and a drain feature are disposed on the second III-V compound layer. A gate electrode is disposed over the second III-V compound layer between the source feature and the drain feature. A carrier channel depleting layer is disposed on the second III-V compound layer. The carrier channel depleting layer is deposited using plasma and a portion of the carrier channel depleting layer is under at least a portion of the gate electrode. | 2013-04-11 |
20130087805 | SEMICONDUCTOR LIGHT EMITTING DEVICE - According to one embodiment, a semiconductor light emitting device includes an n-type semiconductor layer, a p-type semiconductor layer and a light emitting layer. The emitting layer is provided between the n-type layer and the p-type layer, and includes a plurality of barrier layers and a plurality of well layers, being alternately stacked. The p-side barrier layer being closest to the p-type layer among the plurality of barrier layer includes a first layer and a second layer, containing group III elements. An In composition ratio in the group III elements of the second layer is higher than an In composition ratio in the group III elements of the first layer. An average In composition ratio of the p-side layer is higher than an average In composition ratio of an n-side barrier layer that is closest to the n-type layer among the plurality of barrier layers. | 2013-04-11 |
20130087806 | SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR LIGHT EMITTING DEVICE - According to one embodiment, a semiconductor light emitting device includes a first semiconductor layer, a light emitting unit, a second semiconductor layer, a reflecting electrode, an oxide layer and a nitrogen-containing layer. The first semiconductor layer is of a first conductivity type. The light emitting unit is provided on the first semiconductor layer. The second semiconductor layer is provided on the light emitting unit and is of a second conductivity type. The reflecting electrode is provided on the second semiconductor layer and includes Ag. The oxide layer is provided on the reflecting electrode. The oxide layer is insulative and has a first opening. The nitrogen-containing layer is provided on the oxide layer. The nitrogen-containing layer is insulative and has a second opening communicating with the first opening. | 2013-04-11 |
20130087807 | EPITAXIAL GROWTH SUBSTRATE, SEMICONDUCTOR DEVICE, AND EPITAXIAL GROWTH METHOD - In heteroepitaxially growing a group-III nitride semiconductor on a Si single crystal substrate, the occurrence of cracks initiating in the wafer edge portion can be suppressed. Region A is an outermost peripheral portion outside the principal surface, being a bevel portion tapered. Regions B and C are on the same plane (the principal surface), region B (mirror-surface portion) being the center portion of the principal surface, and region C a region in the principal surface edge portion surrounding region B. The principal surface has a plane orientation, and in region B, is mirror-surface-finished. Region B occupies most of the principal surface of this Si single crystal substrate, and a semiconductor device is manufactured therein. Region C (surface-roughened portion) has a plane orientation as with region B, however, region B is mirror-surface-finished, whereas region C is surface-roughened. | 2013-04-11 |
20130087808 | SIC BIPOLAR JUNCTION TRANSISTOR WITH OVERGROWN EMITTER - New designs for silicon carbide (SiC) bipolar junction transistors (BJTs) and new methods of manufacturing such SiC BJTs are provided. The SiC BJT can include a collector region, a base region, and an emitter region where the collector region, the base region, and the emitter region are arranged as a stack. The emitter region can form an elevated structure defined by outer sidewalls disposed on the stack. The base region can have a portion interfacing the emitter region and defining an intrinsic base region. The intrinsic base region can include a first portion laterally spaced away from the outer sidewalls of the emitter region by a second portion of the base region that has a dopant dose higher than a dopant dose of the first portion. | 2013-04-11 |
20130087809 | METHOD OF MANUFACTURING A SiC BIPOLAR JUNCTION TRANSISTOR AND SiC BIPOLAR JUNCTION TRANSISTOR THEREOF - A method of manufacturing a silicon carbide (SiC) bipolar junction transistor (BJT) and a SiC BJT are provided. The SiC BJT comprises an emitter region, a base region and a collector region. The collector region is arranged on a substrate having an off-axis orientation of about 4 degrees or lower. Further, a defect termination layer (DTL) is arranged between the substrate and the collector region. A thickness and a doping level of the DTL are configured to terminate basal plane dislocations in the DTL and reduce the growth of defects from the DTL to the collector region. At least some of the embodiments are advantageous in that SiC BJTs with improved stability are provided. Further, a method of evaluating the degradation performance of a SiC BJT is provided. | 2013-04-11 |
20130087810 | FIN FIELD-EFFECT TRANSISTOR STRUCTURE - A fin field-effect transistor structure comprises a substrate, a fin channel, a source/drain region, a high-k metal gate and a plurality of slot contact structures. The fin channel is formed on the substrate. The source/drain region is formed in the fin channel. The high-k metal gate formed on the substrate and the fin channel comprises a high-k dielectric layer and a metal gate layer, wherein the high-k dielectric layer is arranged between the metal gate layer and the fin channel. The slot contact structures are disposed at both sides of the metal gate. | 2013-04-11 |
20130087811 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - According to one embodiment, a semiconductor device includes first, second, and third molded bodies. The first molded body covers a first light emitting element, a part of a lead electrically connected to the first light emitting element, a first light receiving element configured to detect a light emitted from the first light emitting element, and a part of a lead electrically connected to the first light receiving element with a first resin. The second molded body covers a second light emitting element, a part of a lead electrically connected to the second light emitting element, a second light receiving element configured to detect a light emitted from the second light emitting element, and a part of a lead electrically connected to the second light receiving element with the first resin. The third molded body molds the first and the second molded bodies as one body using a second resin. | 2013-04-11 |
20130087812 | LIGHT-EMITTING DEVICE WITH A SPACER AT BOTTOM SURFACE - A light-emitting device having at least one spacer located at a bottom surface is disclosed. In two other embodiments, an electronic display system and an electronic system having such light-emitting device are disclosed. The light-emitting device comprises a plurality of leads, a light source die, and a body. The body encapsulates a portion of the plurality of leads and the light source die. The body has a least one side surface and a bottom surface. The at least one spacer is located at the bottom surface. In use, the light-emitting device is attached to a top surface of a substrate. The spacer is configured to create an air vent between the bottom surface and the top surface of the substrate when the light-emitting device is attached to, and the spacer is in contact with the substrate. | 2013-04-11 |
20130087813 | GROOVED PLATE FOR IMPROVED SOLDER BONDING - A metal plate on a multi-die LED emitter substrate or a metal plate on a metal-core printed circuit board (MCPCB) that attaches to the emitter substrate (or both plates) can be fabricated with a number of generally radial grooves, at least some of which extend to the peripheral edge of the plate. These grooves can provide channels that allow air to escape during solder-bonding processes, reducing the size and/or total area of solder voids and thereby improving thermal transfer between the emitter and the MCPCB. | 2013-04-11 |
20130087814 | LIGHT EMITTING DEVICE AND LIGHTING APPARATUS INCLUDING THE SAME - A light emitting device is disclosed. The disclosed light emitting device includes a light emitting structure including a first-conductivity-type semiconductor layer, an active layer, and a second-conductivity-type semiconductor layer, a second electrode layer disposed beneath the light emitting structure and electrically connected to the second-conductivity-type semiconductor layer, a first electrode layer including a main electrode disposed beneath the second electrode layer, and at least one contact electrode branching from the main electrode and extending through the second electrode layer, the second-conductivity-type semiconductor layer and the active layer, to contact the first-conductivity-type semiconductor layer, and an insulating layer interposed between the first electrode layer and the second electrode layer and between the first electrode layer and the light emitting structure. The first-conductivity-type semiconductor layer includes a first region and a second region having a smaller height than the first region, and the first region overlaps with the contact electrode. | 2013-04-11 |
20130087815 | HYBRID DISPLAY DEVICE - The disclosure provides a hybrid display device, comprising: a substrate, wherein the substrate comprises a first surface and a second surface; a TFT array layer formed on the first surface of the substrate; a first display device formed on the TFT array layer; and a second display device formed on the second surface of the substrate, wherein there exists a corresponding relationship between a dielectric constant (k) of the substrate and a thickness (t) of the substrate to drive at least one of the first display device and the second display device, or to drive both of the first display device and the second display device by the TFT array layer, especially the TFT array layer actively drive the first display device, the second display device or combinations thereof. The dielectric constant of the substrate is about 1-100 and the thickness of the substrate is about 0.1-60 μm. | 2013-04-11 |
20130087816 | ILLUMINATION DEVICE - An illumination device includes a base, a light-emitting module, a first layer, and a second layer. The light-emitting module is disposed on the base for generating a progressive-type light-emitting intensity. The first layer encapsulates the light-emitting module. The second layer encloses the first layer. The second layer has a progressive-type thickness corresponding to the progressive-type light-emitting intensity, and both the progressive-type light-emitting intensity and the progressive-type thickness are decreased or increased gradually, thus the progressive-type light-emitting intensity can be transformed into the same light-emitting intensity through the progressive-type thickness of the second layer. | 2013-04-11 |
20130087817 | LIGHT EMITTING DEVICE AND LIGHT UNIT HAVING THE SAME - A light emitting device includes a body having a first recess; a barrier section having a second recess and a third recess, protruding upward over a bottom surface of the first recess, and dividing the bottom surface of the first recess into a first region and a second region; a first light emitting diode disposed in the first region; a second light emitting diode disposed in the second region; a first lead electrode disposed in the first region; a second lead electrode disposed in the second region; a first wire electrically connecting the first lead electrode to the second light emitting diode through the second recess; and a second wire electrically connecting the second lead electrode to the first light emitting diode through the third recess. | 2013-04-11 |
20130087818 | LIGHT EMITTING DIODE - A light emitting diode including a substrate, a first semiconductor layer, an active layer, and a second semiconductor layer is provided. The substrate includes a first surface and a second surface, and the second surface is a light emitting surface of the LED. The first semiconductor layer, the active layer, and the second semiconductor layer are stacked on the first surface in that order. A first electrode electrically is connected with the first semiconductor layer. A second electrode is electrically connected with the second semiconductor layer. A number of three-dimensional nano-structures are located on at least one surface of the substrate and aligned side by side, and a cross section of each of the three-dimensional nano-structure is M-shaped. | 2013-04-11 |
20130087819 | LIGHT EMITTING DIODE - A light emitting diode is provided. The light emitting diode includes a first semiconductor layer, an active layer and a second semiconductor layer. The active layer is sandwiched between the first semiconductor layer and the second semiconductor layer, and a surface of the second semiconductor layer which is away from the active layer is a light emitting surface. A first electrode is electrically connected with the first semiconductor layer. A second electrode is electrically connected with the second semiconductor layer. A number of three-dimensional nano-structures are formed on the light emitting surface. The number of the three-dimensional nano-structure are aligned side by side, and a cross-section of thee three-dimensional nano-structure is M-shaped. | 2013-04-11 |
20130087820 | LIGHT EMITTING DIODE - A light emitting diode is provided. The light emitting diode includes a first semiconductor layer, an active layer, a second semiconductor layer, a first electrode and a second electrode. The active layer is sandwiched between the first semiconductor layer and the second semiconductor layer, and a surface of the second semiconductor layer which is away from the active layer is a light extraction surface of the LED. The first electrode is electrically connected with the first semiconductor layer. The second electrode electrically connected with the second semiconductor layer. A number of three-dimensional nano-structures are formed on the light extraction surface of LED, the number of the three-dimensional nano-structures are aligned side by side, and a cross section of each three-dimensional nano-structure is M-shaped. | 2013-04-11 |
20130087821 | PHOSPHOR-CONVERTED SINGLE-COLOR LED INCLUDING A LONG-WAVELENGTH PASS FILTER - A phosphor-converted single-color LED is provided. The phosphor-converted single-color LED includes a long-wavelength pass filter having a special construction. The phosphor-converted single-color LED has high color purity and efficiency despite the use of a phosphor in the form of a nano/micro powder. | 2013-04-11 |