16th week of 2012 patent applcation highlights part 14 |
Patent application number | Title | Published |
20120091369 | FOCUSING MULTIMODAL OPTICAL MICROPROBE DEVICES - The present invention provides an optical microprobe device and method for focusing multimodal radiation with wavelength-scale spatial resolution and delivering the focused radiation to a specimen, including: a radiation source; and one or more of a plurality of optically transparent or semitransparent spheres and a plurality of optically transparent or semitransparent cylinders optically coupled to the radiation source; wherein the one or more of the plurality of optically transparent or semitransparent spheres and the plurality of optically transparent or semitransparent cylinders periodically focus radiation optically transmitted from the radiation source such that radiation ultimately transmitted to the specimen has predetermined characteristics. Preferably, the spheres or cylinders are assembled inside one of a hollow waveguide, a hollow-core photonic crystal fiber, a capillary tube, and integrated in a multimode fiber. Alternatively, the spheres or cylinders are assembled on a substrate. Optionally, the optical microprobe device also includes one or more of a waveguide, an optical fiber, a lens, and an optical structure disposed between the radiation source and the spheres or cylinders. Optionally, the spheres or cylinders are made from optically nonlinear or active materials that permit efficient nonlinear frequency generation and low-threshold lasing using the optical microprobe device. | 2012-04-19 |
20120091370 | IMPRINT MASK MANUFACTURING METHOD, IMPRINT MASK MANUFACTURING DEVICE, AND SEMICONDUCTOR DEVICE MANUFACTURING METHOD - A pattern is formed on a mask substrate. Positional deviation information between an actual position of the pattern formed on the mask substrate and a design position decided at the time of designing the pattern is calculated. A heterogeneous layer of which a volume expands more greatly than that of surrounding mask substrate region is formed in a predetermined position within the mask substrate so that volume expansion of the heterogeneous layer according to the positional deviation information is achieved. | 2012-04-19 |
20120091371 | APPARATUS AND METHOD FOR REDUCING ABSORPTION OF RADIATION BY HEALTHY CELLS FROM AN EXTERNAL RADIATION SOURCE - An apparatus and method for reducing absorption of radiation by healthy cells from an external radiation source provided to a living organism is disclosed. A smart device or apparatus with a smart antenna implanted near a target area in the living organism or provided externally proximate to the target area is provided to absorb any excess radiation. With the decrease of radiation or protection of healthy cells, higher radiation to the target area or diseased cells may be provided. | 2012-04-19 |
20120091372 | LIGHT FIELD IMAGE SENSOR, METHOD AND APPLICATIONS - An angle-sensitive pixel (ASP) device that uses the Talbot effect to detect the local intensity and incident angle of light includes a phase grating disposed above a photodiode assembly or a phase grating disposed above an analyzer grating that is disposed above a photodiode assembly. When illuminated by a plane wave, the upper grating generates a self-image at a selected Talbot depth. Several such structures, tuned to different incident angles, are sufficient to extract local incident angle and intensity. Arrays of such structures are sufficient to localize light sources in three dimensions without any additional optics. | 2012-04-19 |
20120091373 | STEAM VALVE APPARATUS - In one embodiment, a steam valve apparatus includes: a hydraulic cylinder including an internal space sectioned into first and second chambers by a piston operated by a hydraulic liquid; a first passage to supply the hydraulic liquid to the first chamber; a second passage connecting the first and second chambers; a third passage to drain the hydraulic liquid from the second chamber; an electromagnetic valve switched between first and second states; a first cartridge valve opening the first passage when the electromagnetic valve is in the first state and closing the first passage when the electromagnetic valve is in the second state; and a second cartridge valve closing the first passage when the electromagnetic valve is in the first state and opening the first passage when the electromagnetic valve is in the second state. | 2012-04-19 |
20120091374 | MICROFABRICATED ELASTOMERIC VALVE AND PUMP SYSTEMS - A method of fabricating an elastomeric structure, comprising: forming a first elastomeric layer on top of a first micromachined mold, the first micromachined mold having a first raised protrusion which forms a first recess extending along a bottom surface of the first elastomeric layer; forming a second elastomeric layer on top of a second micromachined mold, the second micromachined mold having a second raised protrusion which forms a second recess extending along a bottom surface of the second elastomeric layer; bonding the bottom surface of the second elastomeric layer onto a top surface of the first elastomeric layer such that a control channel forms in the second recess between the first and second elastomeric layers; and positioning the first elastomeric layer on top of a planar substrate such that a flow channel forms in the first recess between the first elastomeric layer and the planar substrate. | 2012-04-19 |
20120091375 | ELECTRICALLY OPERATED VALVE - An electrically operated valve for controlling a flow rate of cooling medium in a refrigeration cycle is disclosed. The electrically operated valve has a first movable valve body, and a second movable valve body having a first valve seat. The second valve body comes into contactable with second and third valve seats each having larger diameter than the first valve seat. The electrically operated valve comes to a closed state when second valve body seats on second or third valve seat, while first valve body seats on first valve seat. When a power supply is turned on, second valve body comes away from second valve seat to provide a large flow rate. When second valve body seats on third valve seat, the flow is interrupted, and thereafter, when first valve body moves away from first valve seat, the flow rate can be controlled to be small. | 2012-04-19 |
20120091376 | ACTUATOR FOR CONTROLLING A FLUID FLOW - The invention relates to an actuator ( | 2012-04-19 |
20120091377 | Conservation Device for Use With a Showerhead - A water conservation device for use with a showerhead includes a body portion including an inlet and a reduced flow outlet. A valve element is disposed within the body portion. It includes a port and is pivotable within the body portion between an open position and a closed position. A pivot axle connects to the valve element and extends from the inner surface of the body to the outer surface. A lever includes a first distal end portion and a first proximal end portion. The first distal end portion rigidly connects to and extends from the axle. A rigid handle has a second distal end portion and a second proximal end portion. The second distal end portion of the handle is pivotably connected to the first proximal end portion of the lever. | 2012-04-19 |
20120091378 | Sealing valve arrangement for a shaft furnace charging installation - The invention relates to an upper or lower sealing valve arrangement for a shaft furnace charging installation. The arrangement comprises a shutter-actuating device ( | 2012-04-19 |
20120091379 | Water Conservation Shower Valve - A pushbutton device that will stop the flow of water to the showerhead by closing a valve after the hot and cold water is mixed to the desired temperature and water force. This button will operate a simple “push-to-open/push-to-close” valve, which will interrupt the water flow to the showerhead. The button will be clearly marked PAUSE, and will be visible to the user. While the button will highly visible to the user, it will be mounted in low relief to the wall, with smooth and rounded surface and edges, and will not pose a danger to the user in the event of a slip in the shower. This invention is meant to enable the user to instantly change the amount of water used for showering, by allowing the user to immediately stop the water flow and re-start the flow, without the need to re-adjust the water temperature and water force. Once the temperature is set and the water force is achieved the user will able to stop and start the water without having to reset. The objective is to enable the user to save significant amounts of both water and the energy needed to heat the water to the desired showering temperature, without having to spend any time, at all, thinking about it. | 2012-04-19 |
20120091380 | Combination Valve Assembly - A combination valve assembly is adapted to being an interface for filling and relieving excess pressure from a closed fluid system such as a propane tank, and to enable the regulation of fluid height within the closed fluid system via a dip tube and a bleeder set screw. The system generally comprises a pin valve element, an insert shell element, a main housing element, a relief system, and a dip tube member in fluid communication with an overfill port in the main housing. The dip tube member may be adapted to extend outward of the distal end of the man housing element. | 2012-04-19 |
20120091381 | Uni-directional valve, filtering face mask - A uni-directional valve for an air path of a ventilation device. A flexible valve element is held biased in a housing of the uni-directional valve to close at least one air passage located in a sealing section and with a sealing portion to at least partially open the air passage if the valve element is impinged by a sufficient air pressure against the bias. The valve element is designed as cylinder and the sealing portion is located on the lateral surface of the cylinder. The sealing portion is located opposite to a support portion located on the lateral surface of the cylinder. The support portion interacts with a support section of the housing. The distance between the support section and the sealing section of the housing is smaller than the distance between the support portion and the sealing portion in the unbiased state of the valve element. | 2012-04-19 |
20120091382 | On-off valves for high pressure fluids - An on-off valve that can operate between an open position and a closed position. The on-off valve has a valve body with a cylindrical valve cavity, an inlet, an outlet, and in an open position the inlet is in communication with the outlet. A cylindrical valve cartridge is sealably mounted within a chamber of the valve cavity and has a central cavity facing the valve cavity and a bore forming communication with an atmosphere external to the valve cartridge. A pin extension is movably mounted within the bore. A pin bushing and a pin seal are mounted within the central cavity, and an actuating pin is movably mounted at least partially within the central cavity. A valve poppet is slidably mounted within the valve cavity. In a closed position a first end portion of the valve poppet closes the first outlet, and in an open position the first end portion opens the first outlet. A bias element is mounted to exert a bias force to and urge the valve poppet against the valve cartridge. An actuator is mounted with respect to the valve body and operates the actuating pin between the open position and the closed position of the on-off valve. | 2012-04-19 |
20120091383 | Marine Moisture Blocking Valve - Presently a recreational boater puts an additive in the fuel tank every time he/she buys gas for their boat. Even with the additives on the market, ambient moisture is absorbed into the fuel tank causing stalls while underway and the buildup of water in the bottom of the fuel tank. The purpose of the marine moisture blocking valve is to prevent ambient moisture from being absorbed by the ethanol additive used in gasoline marine engines use while still allowing the fuel tank to draw air and also allowing for expansion and venting of fuel vapor. Simply put the valve is designed to help prevent marine fuel tanks from absorbing water rendering the fuel in the tank useless. | 2012-04-19 |
20120091384 | FLAT GASKET - A flat gasket arranged between a component that is fixed to the cylinder head and a housing that accommodates a camshaft adjuster. The flat gasket has a flat gasket body encompassing a surface to be sealed. On the gasket body, a convexity is formed, which encompasses the surface to be sealed and protrudes from the surface of the gasket body. | 2012-04-19 |
20120091385 | PROCESS VALVE HAVING A FLEXIBLE SEALING EDGE - Process valve for controlling and shutting off a fluid stream comprising a valve seat ( | 2012-04-19 |
20120091386 | VACUUM PROCESSING APPARATUS - A vacuum processing apparatus that includes a vacuum vessel; an opening disposed in a wall of the vacuum vessel, through which a sample to be processed is taken in and out; a valve body disposed outside the wall for airtightly sealing the opening; and a drive unit driving the valve body to carry out a sealing or opening operation. The drive unit includes a first member coupled to an actuator that moves along a substantially linear first direction as a result of operation of the actuator, and a second member coupled to the first member that moves along a substantially linear second direction that intersects with the first direction. The valve body, coupled to the second member, seals the opening as a result of movement of the second member. | 2012-04-19 |
20120091387 | METHOD AND SUBSTRATES FOR MATERIAL APPLICATION - A method of and an apparatus for making a composite material is provided. The composite is able to be formed by mixing a binder and a physical property enhancing material to form a mixer. The binder is able to be pitch, such as mesophase pitch. The physical property enhancing material is able to be fiber glass. The mixer is able to be processed through a lamination process, stabilization/cross-link process, and carbonization. The composite material is able to be applied in the field of electronic components and green technology, such as a substrate of a photovoltaic cell. | 2012-04-19 |
20120091388 | EXPANDED ARTICLES WITH EXCELLENT RESISTANCE TO SOLAR RADIATION AND OPTIMUM THERMOINSULATING AND MECHANICAL PROPERTIES - A thermoinsulating expanded article with improved resistance to solar irradiation, which includes an expanded polymeric matrix, obtained by the expansion and sintering of beads or granules containing a vinyl aromatic (co)polymer, where the interior of the beads or granules contains a homogeneously dispersed filler containing at least one athermanous material selected from coke, graphite and carbon black and optionally contains an active inorganic additive within the wave-lengths ranging from 100 to 20,000 cm | 2012-04-19 |
20120091389 | PROCESS - A process for the preparation of a niobium compound of formula (I): | 2012-04-19 |
20120091390 | Refrigerant composition on the basis of at least one non-halogenated inflammable hydrocarbon - Refrigerant composition on the basis of at least one non-halogenated inflammable hydrocarbon, in which an addition of at least one refrigerant/extinguishing agent selected from the group of fluorinated hydrocarbons is made. | 2012-04-19 |
20120091391 | METHOD FOR PROCESSING BATTERY MEMBER - It is a major object of the invention to provide a method for processing a battery member, by which a cathode active material and a sulfide solid electrolyte material can be efficiently separated from each other and the cathode active material and Li contained in the sulfide solid electrolyte material can be efficiently recovered. To achieve the object, the present invention provides a method for processing a battery member containing at least a Li-containing cathode active material and a Li-containing sulfide solid electrolyte material, comprising the steps of: bringing the battery member into contact with a process solution to generate hydrogen sulfide as well as to dissolve the Li contained in the sulfide solid electrolyte material in the process solution; recovering the cathode active material as an insoluble component from the process solution containing the Li dissolved therein; and recovering a Li compound from the process solution, from which the cathode active material as an insoluble component is recovered. | 2012-04-19 |
20120091392 | Process for Producing Water-Absorbing Polymer Particles with Low Caking Tendency and High Absorption under Pressure - A process for producing water-absorbing polymer particles with low caking tendency and high absorption under pressure, comprising polymerization of a monomer solution or suspension, drying of the resulting polymer gel, grinding, classifying, thermal surface postcrosslinking and coating with silicon dioxide, wherein the water-absorbing polymer particles have been coated, before, during or after the surface postcrosslinking with aluminum cations. | 2012-04-19 |
20120091393 | COMPOSITE FILM AND METHOD FOR MANUFACTURING A COMPOSITE FILM - There is provided a method for manufacturing a thin polarizing film having an absorption axis oblique to a width direction of the film which comprises the steps of: performing an orientation treatment in two directions in a plane of a support film; applying a solution containing a lyotropic liquid crystal compound onto a surface of the support film; and causing a column-shaped aggregate of the lyotropic liquid crystal compound to be oriented in a direction (orientation direction) equal to the vector sum of a direction of first orientation treatment and a direction of second orientation treatment. | 2012-04-19 |
20120091394 | BLUE LIGHT EMITTING GLASS AND PREPARATION METHOD THEREOF - Blue light emitting glass and the preparation method thereof are provided. The blue light emitting glass has the following composition: aCaO.bAl | 2012-04-19 |
20120091395 | Method and Device for Producing Low-Tar Synthesis Gas from Biomass - A method and device for producing low-tar synthesis gas from biomass. The method according to the invention lowers the tar content in the synthesis gas by splitting the biomass into pyrolysis coke and pyrolysis gas in a fluidized bed reactor, both of which are fed to at least one more fluidized bed reactor, wherein tars in the largely tar-free pyrolysis coke are catalytically split at a higher temperature without the ash melting point being exceeded. The method according to the invention enables the production of largely tar-free synthesis gas. | 2012-04-19 |
20120091396 | RELEASABLE CORROSION INHIBITORS - The present invention includes compositions and methods of supplying a corrosion inhibitor including placing a corrosion inhibitor attached to a nanostructure carrier, placing the nanostructure carrier containing the corrosion inhibitor at a location and the nanostructure carrier is capable of releasing the corrosion inhibitor. | 2012-04-19 |
20120091397 | Coating Compositions With Anticorrosion Properties - Anticorrosive coating compositions as disclosed comprise a binding polymer and an aluminum phosphate corrosion inhibiting pigment dispersed therein. The coating composition comprises up to 25 percent by weight aluminum phosphate. The binding polymer can include solvent-borne polymers, water-borne polymers, solventless polymers, and combinations thereof. The aluminum phosphate is made by sol gel process of combining an aluminum salt with phosphoric acid and a base material. Aluminum phosphate colloidal particles are nanometer sized, and aggregate to form substantially spherical particles. The coating composition provides a controlled delivery of phosphate anions of 100 to 1,500 ppm, depending on post-formation treatment of the aluminum phosphate, and has a total solubles content of less than 1500 ppm, The amorphous aluminum phosphate is free of alkali metals and alkaline earth metals, and has a water adsorption potential of up to about 25 percent by weight water when present in a cured film. | 2012-04-19 |
20120091398 | ANTI-CORROSIVE TREATMENT FOR SURFACES MADE OF ZINC AND ZINC ALLOYS - The invention refers to a process for producing an anticorrosive coating in which a surface to be treated is brought into contact with an aqueous treatment solution containing chromium(III) ions and at least one phosphate compound and an organosol. The corrosive protection of metal surfaces, in particular those containing zinc and zinciferous surfaces with conversion layers is improved. The decorative and functional properties of the surfaces are retained or improved. In addition, the well-known problems associated with the use of compounds containing chromium(VI) or with multi-stage processes are avoided in which a passivation layer containing chromium ions and a sealing are applied one after the other. | 2012-04-19 |
20120091399 | POLYMER COATINGS WITH IMPROVED UV AND HEAT STABILITY - The present invention relates to coatings comprising electrically conductive polymers and flavones, their production and use, and dispersions for the production of such coatings. | 2012-04-19 |
20120091400 | METHOD FOR THE PRODUCTION OF COMPOSITE MATERIALS - The present invention relates to a process for producing a nanocomposite material from
| 2012-04-19 |
20120091401 | METAL NANOPARTICLE DISPERSION - According to one embodiment, metal nanoparticle dispersion includes organic solvent, and metal-containing particles dispersed in the organic solvent. The metal-containing particles include first metal nanoparticles and second metal nanoparticles. Each of the first metal nanoparticles has a high-molecular compound on at least part of a surface thereof. Each of the second metal nanoparticles has a low-molecular compound on at least part of a surface thereof. A total amount of the low-molecular compound on all of the second nanoparticles includes an amount of a primary amine as the low-molecular compound. | 2012-04-19 |
20120091402 | SYNTHESIS OF CONDUCTING POLYMER NANOFIBERS USING AN OLIGOMER OF A MONOMER AS AN INITIATOR - The present invention involves synthesizing conducting polymer nanofibers by mixing an oxidant solution with a monomer solution, which includes a monomer and an oligomer of the monomer that is used as an initiator. The oxidant solution includes an oxidizing agent, or oxidant, such as ferric chloride to oxidize the monomer, the oligomer, or both, and begin polymerization. By including an initiator in the form of the oligomer, which may have a lower oxidation potential than the monomer, the rate of polymerization is accelerated, resulting in the nanofibrous morphology. Therefore, the conducting polymer nanofibers may be synthesized without the use of surfactants, hard templates, or seeds, resulting in a simplified and accelerated polymerization process, which enhances homogenous nucleation of the conducting polymer nanofibers. | 2012-04-19 |
20120091403 | LITHIUM ION RECHARGEABLE BATTERIES & THE ADDITIVE FOR LITHIUM ION RECHARGEABLE BATTERIES WHICH PREVENTS INCREASE OF THE VISCOSITY - The preparation of a slurry so as to exhibit no strong alkalinity not only needs a strict pH control, but also needs once dispersing a positive electrode material in water and the operation of drying after the treatment, and other operations, thereby leading to the complication of the operations and a decrease in the yield. In consideration of the above-mentioned problems, the present invention provides a method for producing a positive electrode plate for a lithium ion rechargeable battery, which exhibits less complication of the operations and less decrease in the yield and can prevent the gelation of a positive electrode material slurry. The above-mentioned problems can be solved by a positive electrode for a lithium ion rechargeable battery containing a positive electrode active material capable of absorbing/desorbing lithium ions, a nitrile group-containing polymer, and a binder. | 2012-04-19 |
20120091404 | ZINTL PHASES FOR THERMOELECTRIC APPLICATIONS - The inventors demonstrate herein that various Zintl compounds can be useful as thermoelectric materials for a variety of applications. Specifically, the utility of Ca | 2012-04-19 |
20120091405 | METHOD FOR MANUFACTURING POSITIVE ELECTRODE ACTIVE MATERIAL FOR POWER STORAGE DEVICE - In a manufacturing process of a positive electrode active material for a power storage device, which includes a lithium silicate compound represented by a general formula Li | 2012-04-19 |
20120091406 | NANOCRYSTAL-METAL OXIDE-POLYMER COMPOSITES AND PREPARATION METHOD THEREOF - Nanocrystal-metal oxide-polymer composites and their methods of preparation are described. The composites comprises a number of nanocrystals within a metal oxide matrix, and an oligomer or polymer covalently bonded to organic reactive groups of the metal oxide matrix. The composites can be applied to a variety of electronic devices. The electronic devices constructed from the composites do not decrease in performance rapidly due to degradation and exhibit improved stability. | 2012-04-19 |
20120091407 | Photosensitive Resin Composition and Light Blocking Layer Using the Same - Disclosed are a photosensitive resin composition that includes (A) a cardo-based resin including repeating units represented by the following Chemical Formulae 1 and 2, (B) reactive unsaturated compound, (C) a pigment, (D) an initiator, and (E) a solvent, and a light blocking layer using the photosensitive resin composition. | 2012-04-19 |
20120091408 | PRY BAR TOOL FOR APIARISTS - A hive tool comprises an integrally formed elongated flat bar shaft with concavely shaped sides having a “Z” shaped portion at one end of the longitudinal axis and a gradually tapered straight edge on the other end. The “Z” shape end thereof is proportioned to slide between the frames of a hive box in the bee space and engages a top bar of a frame. The portion of the “Z” shape adjacent to the shaft provides a fulcrum holding one frame in place, while simultaneously lifting the other with an end flanged plane. A thrust and throw of the lever handle is required for operation. | 2012-04-19 |
20120091409 | STRIKING TOOLS - Hammers suitable to different tasks are described. Each hammer includes features to reduce vibration and provides advantageous balance and mass distribution. The hammers have a handle portion comprising an I-shape sectional profile and a head comprising a cavity formed therethrough. Each hammer may further comprise various nail or other fastener removal structures, such as a claw, slots, notches, or the like. The hammer may further include a nail-starter with magnetic nail retention. | 2012-04-19 |
20120091410 | WINDING DRUM AND METHOD FOR OPERATING A WINDING DRUM - In a method of operating a winding drum, in particular of cranes, for a line to be reeled in or paid out, a hydraulic motor is activated by a control block which has a hydraulic valve assembly comprised of two pressure control valves respectively arranged in a feed line and a return flow line, for operating the winding drum. The pressure control valves are provided to set a pressure differential on the hydraulic motor in order to maintain a defined tautness of the line being reeled in or paid out. | 2012-04-19 |
20120091411 | SELF-RETRACTING HYDRAULIC JACK ASSEMBLY - A self-retracting hydraulic jack assembly is provided which includes a leg retraction compression spring carried by the piston rod assembly encased within the hydraulic extension cylinder of the jack. The hydraulic jack has first and second telescoping tubular leg members that are extensible relative to one another in response to the introduction of hydraulic fluid through the piston rod assembly and into the extension cylinder of the jack assembly. A third freely adjustable drop-leg telescopes into the other legs of the jack assembly through a cam actuated pull-pin casting mounted thereto. | 2012-04-19 |
20120091412 | SECURITY BARRIER SYSTEM - A security barrier system includes a security barrier unit including a first panel group, a second panel group, a connecting member for connecting the first panel group and the second panel group. The first and second panel groups are disposed substantially in parallel and face each other. Each of the first and second panel groups includes one or more sub-panel groups, each of which includes barrier panels arranged in line, intermediate members each disposed between adjacent barrier panels, rope tubes and ropes. Each barrier panel has a front face, a rear face and side faces and has channels passing through from one side face to another side face. The rope tubes are disposed in the channels, respectively, so that the rope tubes pass through the barrier panels and the intermediate members. The barrier panels and the intermediate members are connected by the ropes disposed in the rope tubes. | 2012-04-19 |
20120091413 | Three Dimensional Horizontal Diode Non-Volatile Memory Array and Method of Making Thereof - A non-volatile memory device contains a three dimensional stack of horizontal diodes located in a trench in an insulating material, a plurality of storage elements, a plurality of word lines extending substantially vertically, and a plurality of bit lines. Each of the plurality of bit lines has a first portion that extends up along at least one side of the trench and a second portion that extends substantially horizontally through the three dimensional stack of the horizontal diodes. Each of the horizontal diodes is a steering element of a respective non-volatile memory cell of the non-volatile memory device, and each of the plurality of storage elements is located adjacent to a respective steering element. | 2012-04-19 |
20120091414 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - According to one embodiment, a semiconductor device includes a plurality of silicon films. The plurality of silicon films are disposed on one plane and are made of polysilicon containing an impurity. A crystal orientation of each of the silicon films is a (311) orientation. | 2012-04-19 |
20120091415 | NONVOLATILE MEMORY DEVICE, NONVOLATILE MEMORY DEVICE GROUP, AND MANUFACTURING METHOD THEREOF - A nonvolatile memory device group includes: (A) a first insulating layer; (B) a second insulating layer that has a first concavity and a second concavity communicating with the first concavity and having a width larger than that of the first concavity and that is disposed on the first insulating layer; (C) a plurality of electrodes that are disposed in the first insulating layer and the top surface of which is exposed from the bottom surface of the first concavity; (D) an information storage layer that is formed on the side walls and the bottom surfaces of the first concavity and the second concavity; and (E) a conductive material layer that is filled in a space surrounded with the information storage layer in the second concavity. | 2012-04-19 |
20120091416 | Phase Change Material for a Phase Change Memory Device and Method for Adjusting the Resistivity of the Material - A phase change material for use in a phase change memory device comprises germanium-antimony-tellurium-indium, wherein the phase change material comprises in total more than 30 at % antimony, preferably 5-16 at % germanium, 30-60 at % antimony, 25-51 at % tellurium, and 2-33% at % indium. | 2012-04-19 |
20120091417 | MULTISTATE NONVOLATILE MEMORY ELEMENTS - Multistate nonvolatile memory elements are provided. The multistate nonvolatile memory elements contain multiple layers. Each layer may be based on a different bistable material. The bistable materials may be resistive switching materials such as resistive switching metal oxides. Optional conductor layers and current steering elements may be connected in series with the bistable resistive switching metal oxide layers. | 2012-04-19 |
20120091418 | BIPOLAR STORAGE ELEMENTS FOR USE IN MEMORY CELLS AND METHODS OF FORMING THE SAME - In some embodiments, a memory cell is provided that includes (1) a bipolar storage element formed from a metal-insulator-metal (MIM) stack including (a) a first conductive layer; (b) a reversible resistivity switching (RRS) layer formed above the first conductive layer; (c) a metal/metal oxide layer stack formed above the first conductive layer; and (d) a second conductive layer formed above the RRS layer and the metal/metal oxide layer stack; and (2) a steering element coupled to the storage element. Numerous other aspects are provided. | 2012-04-19 |
20120091419 | MEMORY CELLS HAVING STORAGE ELEMENTS THAT SHARE MATERIAL LAYERS WITH STEERING ELEMENTS AND METHODS OF FORMING THE SAME - In some embodiments, a memory cell is provided that includes a storage element formed from an MIM stack including (1) a first conductive layer; (2) an RRS layer formed above the first conductive layer; and (3) a second conductive layer formed above the RRS layer, at least one of the first and second conductive layers comprising a first semiconductor material layer. The memory cell includes a steering element coupled to the storage element, the steering element formed from the first semiconductor material layer of the MIM stack and one or more additional material layers. Numerous other aspects are provided. | 2012-04-19 |
20120091420 | NONVOLATILE RESISTANCE CHANGE DEVICE - According to one embodiment a first variable resistance layer which is arranged between a second electrode and a first electrode and in which a first conductive filament is capable of growing based on metal supplied from the second electrode, and an n-th variable resistance layer which is arranged between an n-th electrode and an (n+1)-th electrode and in which an n-th conductive filament whose growth rate is different from the first conductive filament is capable of growing based on metal supplied from the (n+1)-th electrode are included, a configuration in which a plurality of conductive filaments is electrically connected in series between the first electrode layer and the (n+1)-th electrode layer is included, and a resistance is changed in a stepwise manner. | 2012-04-19 |
20120091421 | Nanostructure quick-switch memristor and method of manufacturing the same - A nanostructure quick-switch memristor includes an upper electrode, a lower electrode and three layers of nanomembrane provided between the upper electrode and the lower electrode. The three layers of nanomembrane consist of an N-type semiconductor layer, a neutral semiconductor layer on the N-type semiconductor layer, and a P-type semiconductor layer on the neutral semiconductor layer. The nanostructure quick-switch memristor of the present invention has the quick switching speed, simple manufacturing method, and low manufacturing cost. | 2012-04-19 |
20120091422 | Semiconductor Memory Devices Having Variable Resistor And Methods Of Fabricating The Same - According to a method of fabricating the semiconductor memory device, a contact plug can be protected while mold openings are formed. A semiconductor memory device may include a mold dielectric layer on an entire surface of a substrate, the substrate including a first region and a second region. A contact plug may be provided in a contact hole formed through the mold dielectric layer in the first region. A variable resistor may be provided in a mold opening foamed through the mold dielectric layer in the second region. An upper surface of the contact plug may be at a level equal to or lower than an upper surface of the mold dielectric layer. | 2012-04-19 |
20120091423 | NONVOLATILE MEMORY DEVICE AND MANUFACTURING METHOD THEREOF - A nonvolatile memory device is disclosed, in which a first electrode, a first material layer having a positive Peltier coefficient, an information storage layer, a second material layer having a negative Peltier coefficient, and a second electrode are laminated. | 2012-04-19 |
20120091424 | NON-VOLATILE MEMORY DEVICE AND METHODS FOR MANUFACTURING THE SAME - A variable and reversible resistive element includes a transition metal oxide layer, a bottom electrode and at least one conductive plug module. The bottom electrode is disposed under the transition metal oxide layer. The conductive plug module is disposed on the transition metal oxide layer. The conductive plug module includes a metal plug and a barrier layer. The conductive plug is electrically connected with the transition metal oxide layer. The barrier layer surrounds the metal plug, wherein the transition metal oxide layer is made by reacting a portion of a dielectric layer being directly below the metal plug and a portion of the barrier layer contacting the portion of the dielectric layer, wherein the dielectric layer is formed on the bottom electrode. Moreover, a non-volatile memory device and methods for operating and manufacturing the same is disclosed in specification. | 2012-04-19 |
20120091425 | NONVOLATILE MEMORY DEVICE AND MANUFACTURING METHOD THEREOF - A nonvolatile memory device ( | 2012-04-19 |
20120091426 | RESISTANCE-VARIABLE ELEMENT AND METHOD FOR MANUFACTURING THE SAME - A resistance-variable element as disclosed has high reliability, high densification, and good insulating properties. The device provides a resistance-variable element in which a first electrode including a metal primarily containing copper, an oxide film of valve-metal, an ion-conductive layer containing oxygen and a second electrode are laminated in this order. | 2012-04-19 |
20120091427 | MULTI-LEVEL MEMORY ARRAYS WITH MEMORY CELLS THAT EMPLOY BIPOLAR STORAGE ELEMENTS AND METHODS OF FORMING THE SAME - In some embodiments, a memory array is provided that includes (1) a first memory cell having (a) a first conductive line; (b) a first bipolar storage element formed above the first conductive line; and (c) a second conductive line formed above the first bipolar storage element; and (2) a second memory cell formed above the first memory cell and having (a) a second bipolar storage element formed above the second conductive line; and (b) a third conductive line formed above the second bipolar storage element. The first and second memory cells share the second conductive line; the first bipolar storage element has a first storage element polarity orientation within the first memory cell; the second bipolar storage element has a second storage element polarity orientation within the second memory cell; and the second storage element polarity orientation is opposite the first storage element polarity orientation. Numerous other aspects are provided. | 2012-04-19 |
20120091428 | MANUFACTURING METHOD OF MEMORY APPARATUS, MEMORY DEVICE AND MEMORY APPARATUS - A manufacturing method of a memory apparatus in which memory devices each having a memory layer whose resistance value reversibly varies by voltage application between bottom and upper electrodes are formed, includes: forming and shaping a bottom electrode material film into a first linear pattern extending in a first direction; forming a memory layer material film and an upper electrode material film in this order on the bottom electrode material film; forming the upper electrodes and the memory layers by shaping the upper electrode material film and the memory layer material film into a second linear pattern extending in a second direction intersecting with the first direction; and forming the bottom electrodes having a quadrangle plane shape at regions where the first linear pattern intersect with the second linear pattern by shaping the bottom electrode material film into the second linear pattern. | 2012-04-19 |
20120091429 | RESISTIVE MEMORY - A memory device memory device includes a first array of memory structures disposed in rows and columns and constructed over a substrate, each memory structure having a first signal electrode, a second signal electrode, and a resistive layer positioned between the first signal electrode and the second signal electrode. | 2012-04-19 |
20120091430 | NANOELECTROMECHANICAL SYSTEMS AND METHODS FOR MAKING THE SAME - Nanoelectromechanical systems are disclosed that utilize vertically grown or placed nanometer-scale beams. The beams may be configured and arranged for use in a variety of applications, such as batteries, generators, transistors, switching assemblies, and sensors. In some generator applications, nanometer-scale beams may be fixed to a base and grown to a desired height. The beams may produce an electric potential as the beams vibrate, and may provide the electric potential to an electrical contact located at a suitable height above the base. In other embodiments, vertical beams may be grown or placed on side-by-side traces, and an electrical connection may be formed between the side-by-side traces when beams on separate traces vibrate and contact one another. | 2012-04-19 |
20120091431 | Low Temperature Synthesis of Nanowires in Solution - Methods synthesizing nanowires in solution at low temperatures (e.g., about 400° C. or lower) are provided. In the present methods, the nanowires are synthesized by exposing nanowire precursors to metal nanocrystals in a nanowire growth solution comprising a solvent. The metal nanocrystals serve as seed particles that catalyze the growth of the semiconductor nanowires. The metal nanocrystals may be formed in situ in the growth solution from metal nanocrystal precursors. Alternatively, the nanowires may be pre-formed and added to the growth solution. | 2012-04-19 |
20120091432 | NANOWIRES - An apparatus and a method of manufacturing the apparatus. The apparatus includes a main nanowire and branch nanowires emanating from the main nanowire. The main nanowire may have a first portion and a second portion. The first portion may have a first carrier concentration and the second portion may have a second carrier concentration, different to the first carrier concentration. Each branch nanowire may emanate from the first portion of the main nanowire. Each branch nanowire may emanate from the main nanowire at a substantially fixed distance along a length of the main nanowire. | 2012-04-19 |
20120091433 | LIGHT EMITTING DIODE AND METHOD FOR MAKING SAME - A light emitting diode includes a substrate, a number of light emitting units formed on the substrate, and an insulating layer. Each light emitting unit includes a first electrode layer, a number of light emitting nanowires and a second electrode layer. Each light emitting nanowire includes a zinc-oxide-nanowire buffering segment extending from the first electrode layer, an N-type gallium nitride nanowire segment and a P-type gallium nitride nanowire segment. The N-type gallium nitride nanowire segment is interconnected between the zinc-oxide-nanowire buffering segment and the P-type gallium nitride nanowire segment. The P-type gallium nitride nanowire segment has a distal portion embedded in the second electrode layer. The insulating layer is formed on the substrate and the first electrode layer. The light emitting nanowires is embedded in the insulating layer and insulated from each other. | 2012-04-19 |
20120091434 | VERTICAL LIGHT-EMITTING DEVICE - A vertical light-emitting device includes: a substrate; a first electrode disposed on a bottom surface of the substrate; a reflection layer disposed on a top surface of the substrate; a current spreading layer disposed on the reflection layer and comprising a groove having a width narrower toward a top portion thereof; a light generation layer disposed on the current spreading layer; and a second electrode disposed on the light generation layer. | 2012-04-19 |
20120091435 | EPITAXIAL SUBSTRATE FOR ELECTRONIC DEVICE AND METHOD OF PRODUCING THE SAME - An epitaxial substrate for electronic devices is provided, which can improve vertical breakdown voltage and provides a method of producing the same. | 2012-04-19 |
20120091436 | ORDERED ORGANIC-ORGANIC MULTILAYER GROWTH - An ordered multilayer crystalline organic thin film structure is formed by depositing at least two layers of thin film crystalline organic materials successively wherein the at least two thin film layers are selected to have their surface energies within ±50% of each other, and preferably within ±15% of each other, whereby every thin film layer within the multilayer crystalline organic thin film structure exhibit a quasi-epitaxial relationship with the adjacent crystalline organic thin film. | 2012-04-19 |
20120091437 | POLYMER, ORGANIC THIN FILM COMPRISING THE POLYMER, AND ORGANIC THIN-FILM ELEMENT INCLUDING SAME - An object of the present invention is to provide a polymer having a low LUMO, a high charge transport property, and further high solubility in a solvent. The present invention provides a polymer having a repeating unit represented by the formula (I): | 2012-04-19 |
20120091438 | ORGANIC ELECTROLUMINESCENT ELEMENT - Provided is an organic EL device, including: an anode; a cathode; and an organic thin-film layer provided between the anode and the cathode, in which: the organic thin-film layer has a light emitting layer containing a host material and a light emitting material, and a hole transporting layer; and the hole transporting layer has a first hole transporting layer and a second hole transporting layer in the stated order from the anode; the first hole transporting layer contains a specific amine compound; and the second hole transporting layer contains a specific amine compound; or the hole transporting layer has a layer containing a specific electron acceptable compound. The organic EL device has a reduced driving voltage, high luminous efficiency, and excellent practicality. | 2012-04-19 |
20120091439 | ORGANIC EL DISPLAY PANEL, DISPLAY DEVICE, AND METHOD OF MANUFACTURING ORGANIC EL DISPLAY PANEL - A device and method improving luminous efficiency and luminescent color in an organic EL display panel used in electronic devices such as televisions or the like by making it easy to adjust the difference in film thickness between layers of different luminescent colors, such as intermediate layers, when the intermediate layers and light-emitting layers are formed by a wet method. By varying by color the volume of a contact hole formed in an interlayer insulation film, which is a lower layer of an organic EL element, the volume of a concavity in each anode plate is adjusted. When ink that includes material for the intermediate layer or the like is sprayed by an inkjet method, the film thickness of the intermediate layer or the like changes in accordance with the amount of ink filing the concavity. | 2012-04-19 |
20120091440 | ORGANIC LIGHT-EMITTING PANEL AND MANUFACTURING METHOD THEREOF, AND ORGANIC DISPLAY DEVICE - A non-light-emitting cell | 2012-04-19 |
20120091441 | ORGANIC LIGHT-EMITTING PANEL AND MANUFACTURING METHOD THEREOF, AND ORGANIC DISPLAY DEVICE - A non-light-emitting cell | 2012-04-19 |
20120091442 | Light-Emitting Element, Light-Emitting Device and an Electronic Device - The present invention provides a light-emitting element including an electron-transporting layer and a hole-transporting layer between a first electrode and a second electrode; and a first layer and a second layer between the electron-transporting layer and the hole-transporting layer, wherein the first layer includes a first organic compound and an organic compound having a hole-transporting property, the second layer includes a second organic compound and an organic compound having an electron-transporting property, the first layer is formed in contact with the first electrode side of the second layer, the first organic compound and the second organic compound are the same compound, and a voltage is applied to the first electrode and the second electrode, so that both of the first organic compound and the second organic compound emit light. | 2012-04-19 |
20120091443 | COMPOSITION FOR USE IN ORGANIC DEVICE, POLYMER FILM, AND ORGANIC ELECTROLUMINESCENT ELEMENT - A composition for use in an organic device, useful in producing an organic device, such as an organic electroluminescent element, having high operation stability, is a composition for use in an organic device that contains at least two cross-linking compounds, at least two of the cross-linking compounds having different numbers of cross-linking groups. A polymer film produced by forming a film of the composition for use in an organic device and then polymerizing the cross-linking compounds. An organic electroluminescent element that includes an anode and a cathode on a substrate and at least one organic layer disposed between the anode and the cathode, wherein at least one of the at least one organic layer is a layer that is produced by forming a film of the composition for use in an organic device and then polymerizing the cross-linking compounds. | 2012-04-19 |
20120091444 | Display Device and Method for Manufacturing Display Device - To provide a display device with higher image quality and reliability or a large-sized display device with a large screen at low cost with high productivity. A function layer (such as a coloring layer or a pixel electrode layer) used in the display device is formed by discharging a liquid function-layer-forming material to an opening formed with a layer including a first organic compound which has a C—N bond or a C—O bond in the main chain as a base and a layer including a second organic compound as a partition. The fluorine density exhibiting liquid repellency to the liquid function-layer-forming material, which is attached to a surface of the layers including organic compounds, is controlled, whereby a liquid repellent region and a lyophilic region can be selectively formed. | 2012-04-19 |
20120091445 | COMPOUND FOR ORGANIC OPTOELECTRONIC DEVICE, ORGANIC LIGHT EMITTING DIODE INCLUDING THE SAME, AND DISPLAY DEVICE INCLUDING THE ORGANIC LIGHT EMITTING DIODE - A compound for an organic optoelectronic device, an organic light emitting diode, and a display device, the compound including substituents represented by the following Chemical Formulae 1 and 2: | 2012-04-19 |
20120091446 | COMPOUND FOR OPTOELECTRONIC DEVICE, ORGANIC LIGHT EMITTING DIODE INCLUDING THE SAME AND DISPLAY INCLUDING THE ORGANIC LIGHT EMITTING DIODE - A compound for an organic optoelectronic device, an organic light emitting diode, and a display device, the compound including sequentially combined substituents represented by the following Chemical Formulae 1 to 3: | 2012-04-19 |
20120091447 | LIGHT EXTRACTING MEMBER - A light extracting member for an organic electroluminescent element, to be provided on a side for extracting light emitted by the organic electroluminescent element, wherein a light extracting surface of the member has a concave-convex structure which is configured such that when comparing an intensity of light that enters the member and is output from the light extracting surface with an intensity of light that is output from a flat light extracting surface of a virtual member, a frontal intensity and an integrated intensity of the former are each greater by a factor of 1.3 or more. | 2012-04-19 |
20120091448 | ORGANIC ELECTRONIC DEVICE AND METHOD FOR PRODUCING THE SAME - There is provided an organic electronic device that can exhibit a long lifetime while having a facilitated production process. An organic electronic device and a method for producing it, wherein the organic electronic device comprises two or more electrodes facing each other on a substrate, and an organic functional layer that includes at least a hole injecting layer and/or a hole transporting layer situated between two electrodes, wherein the hole injecting layer and/or hole transporting layer is formed as a thin-film from a fluid material that comprises anionic metal oxide clusters that include at least one metal element selected from among elements of Group 5, Group 6 or Groups 8-10 of the Periodic Table, the metal oxide clusters being polyoxometalates, dissolved or uniformly dispersed or mixed in an aqueous solvent. | 2012-04-19 |
20120091449 | ORGANIC ELECTROLUMINESCENT ELEMENT - An organic electroluminescent element comprising a pair of electrodes composed of an anode and a cathode, a light-emitting layer provided between the electrodes, and a functional layer provided between the light-emitting layer and the anode, wherein the functional layer comprises an n-type semiconductor and a macromolecular compound comprising a repeating unit having an amine residue. | 2012-04-19 |
20120091450 | NOVEL ORGANIC COMPOUND AND ORGANIC LIGHT-EMITTING DEVICE - The present invention provides organic compounds which are indenobenzo[k]fluoranthene derivatives represented by the following general formula (1): | 2012-04-19 |
20120091451 | Zinc Oxide Nanostructures and Sensors Using Zinc Oxide Nanostructures - A method for preparing zinc oxide nanostructures using arc discharge is disclosed. The method comprises the provision of an anode and a cathode in an arc discharge chamber. Current is supplied to the anode and the cathode to establish an arc discharge between the cathode and the anode to vaporise the anode and produce zinc oxide nanostructures. Contemplated is the use of the zinc oxide nanostructures to produce components that have applications in, for example, optoelectronics, energy storage devices, field emission devices, and sensors such as UV photosensors, gas sensors and humidity sensors. Disclosed is a gas sensor and method for its production, where said method comprises the provision of a sensor substrate comprising a conducting thin film at least partially covering at least two regions on at least one surface of a sensor substrate material to define a gap in the conducting thin film, the application of a mixture of zinc oxide nanostructures and a non-ionic polymer to at least a portion of the gap i the conducting thin film to thereby bridge the gap. Optionally contemplated is a step of annealing the mixture of zinc oxide nanostructures and non-ionic polymer applied to said sensor substrate to produce the sensor component. | 2012-04-19 |
20120091452 | OXIDE SEMICONDUCTOR, THIN FILM TRANSISTOR ARRAY SUBSTRATE AND PRODUCTION METHOD THEREOF, AND DISPLAY DEVICE - The present invention provides an oxide semiconductor capable of achieving a thin film transistor having stable transistor characteristics, a thin film transistor having a channel layer formed of the oxide semiconductor and a production method thereof, and a display device equipped with the thin film transistor. The oxide semiconductor of the present invention is an oxide semiconductor for a thin film transistor. The oxide semiconductor includes indium, gallium, zinc, and oxygen as constituent atoms, and the oxygen content of the oxide semiconductor is 87% to 95% of the stoichiometric condition set as 100%, in terms of atomic units. | 2012-04-19 |
20120091453 | Transparent Rectifying Metal/Metal Oxide/Semiconductor Contact Structure and Method for the Production Thereof and Use - The invention relates to transparent rectifying contact structures for application in electronic devices, in particular appertaining to optoelectronics, solar technology and sensor technology, and also a method for the production thereof. The transparent rectifying contact structure according to the invention has the following constituents: a) a transparent semiconductor, b) a transparent, non-insulating and non-conducting layer composed of metal oxide, metal sulphide and/or metal nitride, the resistivity of which is preferably in the range of 10 | 2012-04-19 |
20120091454 | INLINE PROCESS CONTROL STRUCTURES - A method for process control is disclosed. The method includes performing an etching process on a semiconductor substrate forming a structure and a test structure having a pattern and a releasing mechanism coupled to the pattern; and monitoring the pattern of the test structure to determine whether the etching process is complete. | 2012-04-19 |
20120091455 | PAD STRUCTURE HAVING CONTACT BARS EXTENDING INTO SUBSTRATE AND WAFER HAVING THE PAD STRUCTURE - A pad structure in a semiconductor wafer for wafer testing is described. The pad structure includes at least two metal pads connected there-between by a plurality of conductive vias in one or more insulation layers. A plurality of contact bars in contact with the bottom-most metal pad extends substantially vertically from the bottom-most metal pad into the substrate. An isolation structure substantially surrounds the plurality of contact bars to isolate the pad structure. | 2012-04-19 |
20120091456 | CONFORMAL ELECTROMAGNETIC SENSOR (FOR DETECTION OF NON-DESTRUCTIVE IMAGING AND INVESTIGATION) - A conformal electro-magnetic (EM) detector and a method of applying such a detector are provided herein as well as variations thereof Variations include, but are not limited to, single-element, area detectors; an array of multiple active elements. | 2012-04-19 |
20120091457 | SEMICONDUCTOR COMPONENT INCLUDING A LATERAL TRANSISTOR COMPONENT - A semiconductor arrangement is disclosed. One embodiment includes a first semiconductor layer including a first and second component zone that form a pn-junction or a Schottky-junction. A second semiconductor layer includes a drift control zone adjacent to the second component zone. A dielectric layer separates the first semiconductor layer from the second semiconductor layer. A rectifying element is coupled between the drift control zone and the second component zone. | 2012-04-19 |
20120091458 | SEMICONDUCTOR DEVICE WITH AMORPHOUS SILICON MAS MEMORY CELL STRUCTURE AND MANUFACTURING METHOD THEREOF - A semiconductor device with an amorphous silicon (a-Si) metal-aluminum oxide-semiconductor (MAS) memory cell structure. The device includes a substrate, a dielectric layer overlying the substrate, and one or more source or drain regions embedded in the dielectric layer with a co-planar surface of n-type a-Si and the dielectric layer. Additionally, the device includes a p-i-n a-Si diode junction. The device further includes an aluminum oxide charge trapping layer on the a-Si p-i-n diode junction and a metal control gate overlying the aluminum oxide layer. A method is provided for making the a-Si MAS memory cell structure and can be repeated to integrate the structure three-dimensionally. | 2012-04-19 |
20120091459 | Organic Light Emitting Display Device and Manufacturing Method Thereof - An organic light emitting diode display comprises: a substrate; an active layer formed with a semiconductor material on the substrate; a first insulation layer formed on the semiconductor layer; a pixel electrode formed on the first insulation layer and generated by alternately stacking a plurality of pixel metal layers and a plurality of pixel transparent conductive layers; a gate electrode formed on the first insulation layer and formed in a configuration different from that of the pixel electrode; a second insulation layer formed on the first insulation layer so as to cover the gate electrode with an insulation layer opening for revealing the pixel electrode; a source electrode and a drain electrode respectively formed on the second insulation layer and electrically connected to the active layer; an organic emission layer formed on the pixel electrode; and a common electrode formed on the organic emission layer. | 2012-04-19 |
20120091460 | Display Device and Method for Manufacturing the Same - A display device includes a substrate; a gate wire including a gate electrode and a first capacitor electrode formed on the substrate; a gate insulating layer formed on the gate wire; a semiconductor layer pattern formed on the gate insulating layer, and including an active region overlapping at least a part of the gate electrode and a capacitor region overlapping at least a part of the first capacitor electrode; an etching preventing layer formed on a part of the active region of the semiconductor layer pattern; and a data wire including a source electrode and a drain electrode formed over the active region of the semiconductor layer from over the etching preventing layer, and separated with the etching preventing layer therebetween, and a second capacitor electrode formed on the capacitor region of the semiconductor layer. | 2012-04-19 |
20120091461 | THIN FILM TRANSISTOR SUBSTRATE AND METHOD OF MANUFACTURING THE SAME - A thin film transistor display substrate and a method of manufacturing the same are provided. The thin film transistor substrate includes a gate electrode formed on a display substrate, an active layer formed on the gate electrode to overlap with the gate electrode and including polycrystalline silicon, a first ohmic contact layer formed on the active layer, a second ohmic contact layer formed on the first ohmic contact layer, and a source electrode and a drain electrode each formed on the second ohmic contact layer. | 2012-04-19 |
20120091462 | TFT MONOS OR SONOS MEMORY CELL STRUCTURES - A device having thin-film transistor (TFT) metal-oxide-nitride-oxide-semiconductor (MONOS) or semiconductor-oxide-nitride-oxide-semiconductor (SONOS) memory cell structures includes a substrate, a dielectric layer on the substrate, and one or more source or drain regions being embedded in the dielectric layer. The dielectric layer is associated with a first surface. Each of the one or more source or drain regions includes an N | 2012-04-19 |
20120091463 | NITRIDE SEMICONDUCTOR LIGHT-EMITTING ELEMENT AND MANUFACTURING METHOD THEREFOR - A nitride-based semiconductor light-emitting device according to the present invention has a nitride-based semiconductor multilayer structure | 2012-04-19 |
20120091464 | GaN LEDs with Improved Area and Method for Making the Same - Enlightening device and method for making the same are disclosed. Individual light emitting devices such as LEDs are separated to form individual dies by process in which a first narrow trench cuts the light emitting portion of the device and a second trench cuts the substrate to which the light emitting portion is attached. The first trench can be less than 10 μm. Hence, a semiconductor area that would normally be devoted to dicing streets on the wafer is substantially reduced thereby increasing the yield of devices. The devices generated by this method can also include base members that are electrically conducting as well as heat conducting in which the base member is directly bonded to the light emitting layers thereby providing improved heat conduction. | 2012-04-19 |
20120091465 | Method of Making Bulk InGaN Substrates and Devices Thereon - A relaxed epitaxial Al | 2012-04-19 |
20120091466 | Smart Integrated Semiconductor Light Emitting System Including Nitride Based Light Emitting Diodes (LED) And Application Specific Integrated Circuits (ASIC) - A light emitting diode (LED) system includes a substrate, an application specific integrated circuit (ASIC), and at least one light emitting diode (LED) that includes a Group-III nitride based material such as GaN, InGaN, AlGaN, AlInGaN or other (Ga, In or Al) N-based materials. The light emitting diode (LED) system can also include a polymer lens, and a phosphor layer on the lens or light emitting diode (LED) for producing white light. In addition, multiple light emitting diodes (LEDs) can be mounted on the substrate, and can have different colors for smart color control lighting. The substrate and the application specific integrated circuit (ASIC) are configured to provide an integrated LED circuit having smart functionality. In addition, the substrate is configured to compliment and expand the functions of the application specific integrated circuit (ASIC), and can also include built in integrated circuits for performing additional electrical functions. | 2012-04-19 |
20120091467 | IN-SITU DEFECT REDUCTION TECHNIQUES FOR NONPOLAR AND SEMIPOLAR (Al, Ga, In)N - A method for growing reduced defect density planar gallium nitride (GaN) films is disclosed. The method includes the steps of (a) growing at least one silicon nitride (SiN | 2012-04-19 |
20120091468 | SEMICONDUCTOR DEVICE WITH INTERPOSER AND METHOD MANUFACTURING SAME - A semiconductor device includes an interposer mounting a semiconductor chip. The interposer includes a silicon substrate having a recessed region formed on a first surface, a first through via penetrating a first region of the silicon substrate from the first surface to an opposing second surface, an insulator disposed in the recessed region, and a first wire pattern at least partially disposed on the insulator and electrically connecting the first through via to the semiconductor chip | 2012-04-19 |