17th week of 2016 patent applcation highlights part 52 |
Patent application number | Title | Published |
20160118293 | METHOD FOR PHOTOLITHOGRAPHY-FREE SELF-ALIGNED REVERSE ACTIVE ETCH - A layer of partially planarized organosilicate (DUO) is spin-coated onto a layer of high density plasma (HDP) oxide on a silicon wafer after the shallow trench isolation (STI) is filled with the HDP oxide. Then the DUO layer is etched using a specialized process specifically tuned to etch the DUO and high density plasma (HDP) oxide at a certain selectivity. The higher areas of the wafer topography (active Si areas) have thinner DUO and as the etch process proceeds it starts to etch through the HDP oxide in these areas (active Si areas). The etch process is stopped after a certain depth is reached and before touching down on the silicon nitride oxidation layer. The DUO is removed and a standard chemical-mechanical polish (CMP) is performed on the silicon wafer. After the CMP step the silicon nitride is removed, exposing the silicon substrate between the field oxides. | 2016-04-28 |
20160118294 | METHOD OF PRODUCING BONDED WAFER - Method of producing bonded wafer including thin film on base wafer, including: implanting at least one gas ion selected from hydrogen ion and rare gas ion into bond wafer from surface of bond wafer to form layer of implanted ion; bonding surface from which ion is implanted into bond wafer and surface of base wafer directly or through insulator film; and then performing heat treatment to separate part of bond wafer along layer of implanted ion, wherein before bond wafer and base wafer are bonded, thickness of bond wafer and base wafer is measured, and combination of bond wafer and base wafer is selected such that difference in thickness between the wafers is less than 5 μm, and selected bond and base wafers are bonded. This method can inhibit variation in thickness in marble pattern that occurs in thin film and produce bonded wafer including thin film with uniform thickness. | 2016-04-28 |
20160118295 | Method for Forming Contact Vias - A method for forming contact vias includes providing a substrate comprising a plurality of contact structures embedded in a first dielectric layer, the contacts abutting an upper surface of the first dielectric layer. The method also includes providing a second dielectric layer on the upper surface of the first dielectric layer, and providing contact vias in the second dielectric layer by patterning the second dielectric layer at least at positions corresponding to the contact structures, wherein patterning the second dielectric layer comprises using a DSA patterning technique. | 2016-04-28 |
20160118296 | Interlevel Conductor Pre-Fill Utilizing Selective Barrier Deposition - A substrate is provided having a dual damascene structure formed within a dielectric material over the substrate. The dual damascene structure includes a trench and an opening formed to extend from a bottom of the trench to an underlying conductive material, with the underlying conductive material exposed at a bottom of the opening. The dual damascene structure is exposed to a sealing process by which the exposed surfaces of the dielectric material in the opening are sealed without covering the underlying conductive material exposed at the bottom of the opening. The sealing process can be one or more of deposition of a flowable film, deposition of an amorphous carbon barrier layer, and formation of a self-assembled monolayer of an amino group. After the sealing process, an electroless deposition process is performed to fill the opening with a metallic material in a bottom-to-top manner up to the bottom of the trench. | 2016-04-28 |
20160118297 | Metal Pads with Openings in Integrated Circuits - A device includes a metal pad, and a passivation layer including portions overlapping edge portions of the metal pad. A Post-Passivation-Interconnect (PPI) includes a trace portion overlying the passivation layer, and a pad portion connected to the trace portion. A polymer layer includes an upper portion over the PPI, and a plug portion extending into, and encircled by, the pad portion of the PPI. | 2016-04-28 |
20160118298 | OXIDE MEDIATED EPITAXIAL NICKEL DISILICIDE ALLOY CONTACT FORMATION - Contact openings are formed into a dielectric material exposing a surface portion of a semiconductor substrate. An interfacial oxide layer is then formed in each contact opening and on an exposed surface portion of the interfacial oxide layer. A NiPt alloy layer is formed within each opening and on the exposed surface portion of each interfacial oxide layer. An anneal is then performed that forms a contact structure of, from bottom to top, a nickel disilicide alloy body having an inverted pyramidal shape, a Pt rich silicide cap region and an oxygen rich region. A metal contact is then formed within each contact opening and atop the oxygen rich region of each contact structure. | 2016-04-28 |
20160118299 | METHOD OF FABRICATING SEMICONDUCTOR DEVICE - The method includes disposing semiconductor chips on a package substrate having sawing lines, forming an encapsulant to cover the semiconductor chips on the package substrate, forming a package assembly by a first curing of the encapsulant, forming first grooves by cutting the encapsulant along the sawing lines, performing a second curing of the encapsulant, and dividing the package assembly into unit semiconductor packages by cutting the package substrate along the sawing lines and forming second grooves to overlap the first grooves. | 2016-04-28 |
20160118300 | WAFER DIE SEPARATION - A method of singulating a wafer starts with fracturing the wafer. The method may also include attaching the dicing tape sheet to a ring frame; relatively raising a portion of the dicing tape sheet supporting the wafer with respect to the ring frame; and attaching support tape to the ring frame and the dicing tape sheet. | 2016-04-28 |
20160118301 | PACKAGE WITH METAL-INSULATOR-METAL CAPACITOR AND METHOD OF MANUFACTURING THE SAME - A package includes a chip that has a metal-insulator-metal (MIM) capacitor formed in a first polymer layer and a metallic pillar formed on the MIM capacitor. A molding compound surrounds the chip, a second polymer layer is formed on the chip and the molding compound, a third polymer layer is formed on the second polymer layer, an interconnect structure is formed between the second polymer layer and the third polymer layer and electrically coupled to the metallic pillar and the MIM capacitor, and a bump is formed over and electrically coupled to the interconnect structure. | 2016-04-28 |
20160118302 | GATE STRUCTURE INTEGRATION SCHEME FOR FIN FIELD EFFECT TRANSISTORS - In one embodiment, a semiconductor device is provided that includes a gate structure present on a channel portion of a fin structure. The gate structure includes a dielectric spacer contacting a sidewall of a gate dielectric and a gate conductor. Epitaxial source and drain regions are present on opposing sidewalls of the fin structure, wherein surfaces of the epitaxial source region and the epitaxial drain region that is in contact with the sidewalls of the fin structure are aligned with an outside surface of the dielectric spacer. In some embodiments, the dielectric spacer, the gate dielectric, and the gate conductor of the semiconductor device are formed using a single photoresist mask replacement gate sequence. | 2016-04-28 |
20160118303 | Method of Forming Source/Drain Contact - A method of fabricating a semiconductor device is disclosed. The method includes forming a gate structure over a substrate. The gate structure includes a first hard mask layer. The method also includes forming a source/drain (S/D) feature in the substrate adjacent to the gate structure, forming a sidewall spacer along sidewalls of the gate structure. The sidewall spacer has an outer edge at its upper portion facing away from the gate structure. The method also includes forming a second spacer along sidewalls of the gate structure and along the outer edge of the sidewall spacer, forming dielectric layers over the gate structure, forming a trench extending through the dielectric layers to expose the source/drain feature while the gate structure is protected by the first hard mask layer and the sidewall spacer with the second spacer. The method also includes forming a contact feature in the trench. | 2016-04-28 |
20160118304 | FABRICATION OF NANOWIRE STRUCTURES - Methods are presented for facilitating fabrication of nanowire structures, such as one or more nanowire field effect transistors. The methods include, for instance: providing a substrate; providing first material layers and second material layers above the substrate, the first material layers interleaved with the second material layers; removing portions of the first material layers and second material layers, the removing forming a plurality of nanowire stacks, including first material nanowires and second material nanowires; removing the first material nanowires from at least one nanowire stack; and removing the second material nanowires from at least one other nanowire stack, where the at least one nanowire stack and at least one other nanowire stack include a p-type nanowire stack(s) and a n-type nanowire stack(s), respectively. | 2016-04-28 |
20160118305 | PROCESS FOR INTEGRATED CIRCUIT FABRICATION INCLUDING A LINER SILICIDE WITH LOW CONTACT RESISTANCE - An integrated circuit includes a substrate supporting a transistor having a source region and a drain region. A high dopant concentration delta-doped layer is present on the source region and drain region of the transistor. A set of contacts extend through a pre-metal dielectric layer covering the transistor. A silicide region is provided at a bottom of the set of contacts. The silicide region is formed by a salicidation reaction between a metal present at the bottom of the contact and the high dopant concentration delta-doped layer on the source region and drain region of the transistor. | 2016-04-28 |
20160118306 | SEMICONDUCTOR DEVICE WITH BURIED METAL LAYER - A semiconductor device includes: a first active region defined by a recess contained in a device isolation film of a semiconductor substrate belonging to a first region and a second region, in a peripheral region including the first region, the second region, and a third region; a second active region defined by the device isolation film contained in the semiconductor substrate of the third region; a buried metal layer buried in the recess; a first conductive layer formed over the semiconductor substrate of the first region; and a second conductive layer formed over the semiconductor substrate of the second region, wherein the first conductive layer or the second conductive layer is formed over the semiconductor substrate of the third region. A three-dimensional dual gate is formed in a peripheral region, such that performance or throughput of transistors is maximized even in the peripheral region. | 2016-04-28 |
20160118307 | METHODS AND DEVICES FOR ENHANCING MOBILITY OF CHARGE CARRIERS - Methods and devices for enhancing mobility of charge carriers. An integrated circuit may include semiconductor devices of two types. The first type of device may include a metallic gate and a channel strained in a first manner. The second type of device may include a metallic gate and a channel strained in a second manner. The gates may include, collectively, three or fewer metallic materials. The gates may share a same metallic material. A method of forming the semiconductor devices on an integrated circuit may include depositing first and second metallic layers in first and second regions of the integrated circuit corresponding to the first and second gates, respectively. | 2016-04-28 |
20160118308 | Method And Apparatus For Semiconductor Testing At Low Temperature - A method for testing a plurality of semiconductor devices arranged on a strip may include forming an array of semiconductor devices on a frame, wherein contact pads of adjacent semiconductor devices are shorted, partially cutting the strip to electrically isolate individual semiconductor devices in the array, placing the strip on an adhesive tape configured to withstand low temperatures (e.g., below −20° C. or below −50° C.), arranging the strip and tape on a test chuck, exposing the test chuck, strip, and tape to temperatures below an ambient temperature and testing the plurality of semiconductor devices while exposed to a low temperature. In one embodiment a KAPTON™ film is used as the adhesive tape. | 2016-04-28 |
20160118309 | Minimal Contact Wet Processing Systems and Methods - Embodiments provided herein describe systems and methods for processing substrates. A substrate having a first region and a second region is provided. A container is positioned proximate to the first region of the substrate. The container has an opening on an end thereof adjacent to the substrate. A processing liquid is dispensed into the container such that the processing liquid contacts the first region of the substrate through the opening. The gaseous pressure in a portion of the container devoid of the processing liquid is reduced. The reduction of the gaseous pressure prevents the processing liquid from flowing from the first region of the substrate to the second region of the substrate. | 2016-04-28 |
20160118310 | SEMICONDUCTOR MODULE - A semiconductor module includes a plurality of insulating circuit boards including semiconductor chips, each of the plurality of insulating circuit boards including a first outer edge among outer edges of the insulating circuit board facing an adjacent insulating circuit board of the plurality of insulating circuit boards, and a second outer edge among the outer edges excluding the first outer edge; a resin frame body having a crosspiece abutting against the first outer edges, and a frame element abutting against the second outer edges; a conductive component striding over the crosspiece to electrically connect the insulating circuit boards to each other; and an upper lid having a lid element covering an opening disposed at an upper part of the resin frame body and a partition protruding from a face of the lid element facing the insulating circuit boards to abut against a part of the crosspiece. | 2016-04-28 |
20160118311 | THIN FILM RDL FOR IC PACKAGE - A package substrate comprising a thin film redistribution layer (RDL) with a plurality of metal pillar configured on chip side is disclosed to thin the thickness of an IC package before mounting to a circuit board. The height of metal pillar keeps a proper distance between the IC chip and the package substrate so that an underfill material can be filled in between to ensure the reliability of the IC package. | 2016-04-28 |
20160118312 | MOLDING COMPOUND SUPPORTED RDL FOR IC PACKAGE - One of the embodiments for a package substrate discloses a molding compound having plurality of metal pillar with middle portion embedded therein; a top end of the metal pillar protrudes above the molding compound; a bottom end of the metal pillar protrudes below the molding compound; a bottom RDL is configured on bottom of the molding compound; the RDL has a plurality of top metal pad and a plurality of bottom metal pad; a density of the plurality of bottom metal pad is higher than the density of the plurality of top metal pad; each metal pillar metal pad is electrically coupled to a corresponding first top metal pad. | 2016-04-28 |
20160118313 | FAN-OUT WAFER LEVEL PACKAGES CONTAINING EMBEDDED GROUND PLANE INTERCONNECT STRUCTURES AND METHODS FOR THE FABRICATION THEREOF - Fan-Out Wafer Level Packages (FO-WLPs) and methods for fabricating FO-WLPs containing Embedded Ground Planes (EGPs) and backside EGP interconnect structures are provided. In one embodiment, the method includes electrically coupling an EGP to a backside terminal of a first microelectronic device through a backside EGP interconnect structure. A molded package body is formed around the first microelectronic device, the EGP, and the EGP interconnect structure. The molded package body has a frontside at which the EGP is exposed. One or more Redistribution Layers are formed over the frontside of the molded packaged body and contain at least one interconnect line electrically coupled to the backside contact through the EGP and the backside EGP interconnect structure. | 2016-04-28 |
20160118314 | POWER MODULE AND METHOD OF PACKAGING THE SAME - Provided are a power module having an integrated power semiconductor and a method of packaging the same. The power module according to an aspect of the present invention includes a power semiconductor chip based on silicon and insulating substrates respectively disposed at both surfaces of the power semiconductor chip and including a metal pattern electrically and directly connected to the power semiconductor chip. | 2016-04-28 |
20160118315 | Heat Sink Coupling Using Flexible Heat Pipes for Multi-Surface Components - An apparatus including a primary device and at least one secondary device coupled in a planar array to a substrate; a first heat exchanger disposed on the primary device and having an opening over an area corresponding to the at least one secondary device; a second heat exchanger disposed in the opening on the at least one secondary device; at least one heat pipe coupled to the first heat exchanger and the second heat exchanger. A method including placing a heat exchanger on a multi-chip package, the heat exchanger including a first portion, a second portion and at least one heat pipe coupled to the first portion and the second portion; and coupling the heat exchanger to the multi-chip package. | 2016-04-28 |
20160118316 | THERMALLY CONDUCTIVE SHEET - A thermally conductive sheet, comprising a curable resin composition, thermally conductive fibers, and thermally conductive particles, wherein the thermally conductive sheet has a compressibility of 40% or more. | 2016-04-28 |
20160118317 | MICROPROCESSOR ASSEMBLY ADAPTED FOR FLUID COOLING - A microprocessor assembly adapted for fluid cooling can include a semiconductor die mounted on a substrate. The semiconductor die can include an integrated circuit with a two-dimensional and/or three-dimensional circuit architecture. The assembly can include a heat sink module in thermal communication with the semiconductor die. The heat sink module can include an inlet port fluidly connected to an inlet chamber, a plurality of orifices fluidly connecting the inlet chamber to an outlet chamber, and an outlet port fluidly connected to the outlet chamber. When pressurized coolant is delivered to the inlet chamber, the plurality of orifices can provide jet streams of coolant into the outlet chamber and against a surface to be cooled to provide fluid cooling suitable to control a semiconductor die temperature during operation. | 2016-04-28 |
20160118318 | SEMICONDUCTOR PACKAGE WITH THROUGH SILICON VIA INTERCONNECT - The invention provides a semiconductor package with a through silicon via (TSV) interconnect. An exemplary embodiment of the semiconductor package with a TSV interconnect includes a semiconductor substrate, having a front side and a back side. A contact array is disposed on the front side of the semiconductor substrate. An isolation structure is disposed in the semiconductor substrate, underlying the contact array. The TSV interconnect is formed through the semiconductor substrate, overlapping with the contact array and the isolation structure. | 2016-04-28 |
20160118319 | SEMICONDUCTOR PACKAGE AND METHOD THEREFOR - In one embodiment, an electronic package structure includes a lead having a first width. An electronic chip having a conductive bump on a major surface, the conductive bump has a second width greater than the first width. The conductive bump is attached to the lead such that a portion of the conductive bump extends to at least partially surround a side surface of the lead. A molding compound resin encapsulates the electronic chip, the conductive bump, and at least a portion of the lead. The lead is configured so strengthen the joining force between the lead and conductive bump. | 2016-04-28 |
20160118320 | ELECTRONIC DEVICE PROVIDED WITH AN ENCAPSULATION STRUCTURE WITH IMPROVED ELECTRIC ACCESSIBILITY AND METHOD OF MANUFACTURING THE ELECTRONIC DEVICE - An electronic device comprising: a semiconductor die integrating an electronic component; a leadframe housing the semiconductor die; a protection body, which surrounds laterally and at the top the semiconductor die and, at least in part, the leadframe structure, defining a top surface, a bottom surface, and a thickness of the electronic device; and a conductive lead electrically coupled to the semiconductor die. The conductive lead is modelled in such a way as to extend throughout the thickness of the protection body for forming a front electrical contact accessible from the top surface of the electronic device, and a rear electrical contact accessible from the bottom surface of the electronic device. | 2016-04-28 |
20160118321 | LEAD FRAME AND MANUFACTURING METHOD OF LEAD FRAME - A lead frame includes a lead frame body processed in a predetermined shape, and including a notched part provided at an end of the lead frame body, the notched part being used as a starting point of tape-removing, a resin leakproof tape stuck on a back surface of the lead frame body, and a region of a periphery of the notched part in the back surface of the lead frame body, the region being reduced in a strength of bonding between the resin leakproof tape and the lead frame body is reduced relative to other region. | 2016-04-28 |
20160118322 | LAMINATED SUBSTRATE AND METHOD FOR MANUFACTURING LAMINATED SUBSTRATE - A laminated substrate includes: a core portion; a first wiring portion configured to be stacked on the core portion and to include a first exposed surface formed by exposing at least part of a surface of the first wiring portion; and a second wiring portion configured to be stacked on the first wiring portion, to include a second exposed surface formed by exposing at least part of a surface of the second wiring portion, and to have higher wiring density of conductor than the first wiring portion has, wherein the first exposed surface and the second exposed surface are provided respectively with a first pad and a second pad which are to be connected to electrodes of one semiconductor chip to be mounted on both the first exposed surface and the second exposed surface. | 2016-04-28 |
20160118323 | PACKAGE STRUCTURE AND FABRICATION METHOD THEREOF - A method for fabricating a package structure is provided, which includes the steps of: forming a first insulating layer on a carrier; forming a dielectric body on the first insulating layer, wherein the dielectric body has a first surface formed on the first insulating layer and a second surface opposite to the first surface, and a circuit layer and a plurality of conductive posts formed on the circuit layer are embedded in the dielectric body; forming a second insulating layer on the second surface of the dielectric body, wherein the glass transition temperature of the first insulating layer and/or the second insulating layer is greater than 250° C.; and removing the carrier. Since the glass transition temperature of the first or second insulating layer is greater than that of the dielectric body, the package structure has a preferred strength to avoid warping, thereby dispensing with a support member. | 2016-04-28 |
20160118324 | WAFER LEVEL PACKAGING APPROACH FOR SEMICONDUCTOR DEVICES - A semiconductor device includes a substrate having a front surface and a back surface, a subassembly on the front surface of the substrate including first and second metal layers insulated from each other, a cap assembly including a metal connection member, and first and second through holes penetrating through the substrate and filled with metals. The metal filled in the first through hole is electrically connected to the first metal layer, and the metal filled in the second through hole is electrically connected to the second metal layer. The semiconductor device also includes a metal connection pad on the substrate that entirely surrounds the subassembly and is aligned with the metal connection member. The interface between the cap assembly and the subassembly is free of through holes to prevent a resistance change and shield the subassembly from interference. | 2016-04-28 |
20160118325 | FABRICATION METHOD OF EMBEDDED CHIP SUBSTRATE - An embedded chip substrate includes a first insulation layer, a core layer, a chip, a second insulation layer, a first circuit layer, and a second circuit layer. The core layer disposed on the first insulation layer has an opening that exposes a portion of the first insulation layer. The chip is adhered into a recess constructed by the opening and the first insulation layer. The second insulation layer is disposed on the core layer for covering the chip. The first circuit layer is disposed at the outer side of the first insulation layer located between the first circuit layer and the core layer. The second circuit layer is disposed at the outer side of the second insulation layer located between the second circuit layer and the core layer. The first circuit layer is electrically connected to the second circuit layer that is electrically connected to the chip. | 2016-04-28 |
20160118326 | METHOD FOR FABRICATING FAN-OUT WAFER LEVEL PACKAGE AND FAN-OUT WAFER LEVEL PACKAGE FABRICATED THEREBY - A method for fabricating a fan-out wafer level package includes disposing a first semiconductor chip on a dummy substrate, forming a mold substrate on the first semiconductor chip and the dummy substrate, removing the dummy substrate to expose the first semiconductor chip, disposing a second semiconductor chip on the exposed first semiconductor chip, forming an insulating layer on the second semiconductor chip, the first semiconductor chip, and the mold substrate, and forming a plurality of redistribution lines that electrically connects the first semiconductor chip and the second semiconductor chip through the insulating layer. | 2016-04-28 |
20160118327 | PACKAGE SUBSTRATE AND FLIP-CHIP PACKAGE CIRCUIT INCLUDING THE SAME - This disclosure provides a package substrate, a flip-chip package circuit and their fabrication method. The package substrate includes: a first wiring layer having a first metal wire and a first dielectric material layer filling the remaining part of the first wiring layer except for the first metal wire; a conductive pillar layer formed on the first wiring layer and including a metal pillar connected to the first metal wire, a molding compound layer with a protrusion part surrounding the metal pillar, and a second dielectric material layer formed on the molding compound layer; a second wiring layer formed on the conductive pillar layer and including a second metal wire connected to the metal pillar; and a protection layer formed on the second wiring layer. | 2016-04-28 |
20160118328 | MOLDING COMPOUND SUPPORTED RDL FOR IC PACKAGE - A cylindrical molding compound supported RDL for IC package is disclosed wherein a central cavity is formed in the center of the molding compound. A plurality of metal pillar is embedded in the molding compound, a redistribution layer is configured on bottom of the plurality of metal pillar; at least one passive element such as a capacitor can be mounted in the central cavity. The bottom of the package is adaptive for at least one chip to mount so that the passive element is close to the chip and therefore simultaneous switching noise (SSN) can be reduced to a minimum at the initial first stage when a power is turned on. | 2016-04-28 |
20160118329 | SEMICONDUCTOR DEVICE - A partition in lattice form forms a plurality of housing sections. A plurality of circuit blocks including a semiconductor block and a terminal base block are electrically connected one to another in a state of being housed in the housing sections to form a power semiconductor circuit. The semiconductor block is formed by covering an IGBT with an insulating material. A collector of the IGBT is connected to an electrode through a metal plate. The electrode is led out from an inner portion of the insulating material to a side surface of the insulating material. A terminal base block includes a power terminal to which an external power wiring for supplying electric power to the IGBT is electrically connected, and a screw hole into which a screw for fixing the power wiring is inserted. | 2016-04-28 |
20160118330 | REPAIRING LINE STRUCTURE AND CIRCUIT REPAIRING METHOD USING SAME - The present invention discloses a repairing line structure for repairing a breakage at a crossing point of electric wires extending along different directions on a thin film transistor panel. The repairing line structure includes a repair line extending from a same side of the electric wire where the breakage is defined and connecting opposite ends of the breakage and an amorphous silicon protection pattern. The repairing line traverses the other electric wire crossing with the electric wire where the breakage is defined. The amorphous silicon protection pattern is located between the repairing line and the electric wire traversed by the repairing line. | 2016-04-28 |
20160118331 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME - A semiconductor device includes a substrate including a cell array region having a first active region and a peripheral circuit region having a second active region, an insulating layer pattern on the substrate and including a hole corresponding with the first active region, a DC conductive pattern in the hole, connected to the first active region, and buried in the substrate, a bit line connected to the DC conductive pattern and including a first bit line conductive pattern contacting the DC conductive pattern and covering a top surface of the insulating layer pattern, and a gate insulating layer and a gate electrode structure on the second active region, the gate electrode structure including a gate conductive pattern and a first gate electrode conductive pattern, the first gate electrode conductive pattern including a same material as the first bit line conductive pattern. | 2016-04-28 |
20160118332 | Semiconductor Device and Method of Fabricating 3D Package With Short Cycle Time and High Yield - A method of making a semiconductor device comprises the steps of providing a first manufacturing line, providing a second manufacturing line, and forming a first redistribution interconnect structure using the first manufacturing line while simultaneously forming a second redistribution interconnect structure using the second manufacturing line. The method further includes the steps of testing a first unit of the first redistribution interconnect structure to determine a first known good unit (KGU), disposing a known good semiconductor die (KGD) over the first KGU of the first redistribution interconnect structure, testing a unit of the second redistribution interconnect structure to determine a second known good unit (KGU, and disposing the second KGU of the second redistribution interconnect structure over the first KGU of the first redistribution interconnect structure and the KGD. A resolution of the second manufacturing line is greater than a resolution of the first manufacturing line. | 2016-04-28 |
20160118333 | Semiconductor Device and Method of Fabricating 3D Package with Short Cycle Time and High Yield - A method of making a semiconductor device comprising the steps of providing a first manufacturing line, providing a second manufacturing line, and forming a first redistribution interconnect structure using the first manufacturing line while forming a second redistribution interconnect structure using the second manufacturing line. The method further includes the steps of testing a first unit of the first redistribution interconnect structure to determine a first known good unit (KGU), disposing a known good semiconductor die (KGD) over the first KGU of the first redistribution interconnect structure, and dicing the first KGU and KGD from the first redistribution interconnect structure. The method further includes the steps of testing a unit of the second redistribution interconnect structure to determine a second KGU of the second redistribution interconnect structure and disposing first KGU of the first redistribution interconnect structure and the KGD over the second KGU of the second redistribution interconnect structure. | 2016-04-28 |
20160118334 | Interconnect Structure and Method of Forming The Same - An interconnect structure and a method of forming an interconnect structure are disclosed. The interconnect structure includes a low-k (LK) dielectric layer over a substrate; a first conductive feature and a second conductive feature in the LK dielectric layer; a first spacer along a first sidewall of the first conductive feature; a second spacer along a second sidewall of the second conductive feature, wherein the second sidewall of the second conductive feature faces the first sidewall of the first conductive feature; an air gap between the first spacer and the second spacer; and a third conductive feature over the first conductive feature, wherein the third conductive feature is connected to the first conductive feature. | 2016-04-28 |
20160118335 | TWO STEP METALLIZATION FORMATION - An integrated circuit structure includes a first conductive line, a dielectric layer over the first conductive line, a diffusion barrier layer in the dielectric layer, and a second conductive line in the dielectric layer. The second conductive line includes a first portion of the diffusion barrier layer. A via is underlying the second conductive line and electrically couples the second conductive line to the first conductive line. The via includes a second portion of the diffusion barrier layer, with the second portion of the diffusion barrier layer having a bottom end higher than a bottom surface of the via. | 2016-04-28 |
20160118336 | SEMICONDUCTOR DEVICE STRUCTURE AND METHOD FOR FORMING THE SAME - A semiconductor device structure is provided. The semiconductor device structure includes a semiconductor substrate. The semiconductor device structure includes a first dielectric layer over the semiconductor substrate. The semiconductor device structure includes a first conductive line embedded in the first dielectric layer. The semiconductor device structure includes a second dielectric layer over the first dielectric layer and the first conductive line. The semiconductor device structure includes a second conductive line over the second dielectric layer. The second dielectric layer is between the first conductive line and the second conductive line. The semiconductor device structure includes conductive pillars passing through the second dielectric layer to electrically connect the first conductive line to the second conductive line. The conductive pillars are spaced apart from each other. | 2016-04-28 |
20160118337 | EMBEDDED PACKAGES, METHODS OF FABRICATING THE SAME, ELECTRONIC SYSTEMS INCLUDING THE SAME, AND MEMORY CARDS INCLUDING THE SAME - An embedded package includes a chip having a top surface on which a connection member is disposed, a first insulation layer surrounding a portion of the chip, a second insulation layer disposed on the first insulation layer to cover the chip, circuit patterns disposed on a bottom surface of the first insulation layer, a third insulation layer disposed on the bottom surface of the first insulation layer to cover the circuit patterns, an external connection terminal penetrating the third insulation layer to contact any one of the circuit patterns, a metal layer disposed on a top surface of the second insulation layer, a first via penetrating the first insulation layer to electrically couple the connection member to any one of the circuit patterns, and a second via penetrating the first and second insulation layers to electrically couple the metal layer to any one of the circuit patterns. | 2016-04-28 |
20160118338 | SEMICONDUCTOR STRUCTURES AND FABRICATION METHODS THEREOF - A method for forming a semiconductor structure including providing a substrate; forming a dielectric layer covering a surface of the substrate; forming a plurality of first through holes exposing the surface of the substrate by etching the dielectric layer; forming first conductive vias by filling the plurality of first through holes using a first metal material and first conductive lines on the first conductive vias also using the first metal material; forming a plurality of second through holes exposing the surface of the substrate by etching the dielectric layer; and forming second conductive vias by filling the plurality of second through holes using a second metal material, different from the first metal material, and second conductive lines over the second conductive vias also using the second metal material, wherein the second metal material has a different anti-electromigration ability from the first metal material. | 2016-04-28 |
20160118339 | Structure Having Isolated Deep Substrate Vias with Decreased Pitch and Increased Aspect Ratio and Related Method - A structure having isolated deep substrate vias with decreased pitch and increased aspect ratio is disclosed. The structure includes a device layer over a buried oxide layer, a deep trench extending through the device layer, a dielectric filler in the deep trench, via holes in the dielectric filler, and conductive fillers in the via holes being the isolated deep substrate vias. The dielectric filler may include silicon oxide. The conductive fillers may include tungsten or copper. An adjacent pair of the isolated deep substrate vias within the deep trench has a pitch equal to or less than 1.0 microns. | 2016-04-28 |
20160118340 | Low-Resistance Interconnects and Methods of Making Same - Devices and methods for providing low-resistance interconnects in a semiconductor device are provided. Specifically, one or more embodiments of the present invention relate to disposing a conductive material in a trench without disposing a resistive barrier material between the conductive material and the sidewalls of the trench so that the conductive material takes up the full width of the trench. For example, the trench may be disposed over one or more contacts made of a barrier material such as titanium nitride that also acts as a seed, and the conductive material may be grown on top of the titanium nitride to fill the trench. | 2016-04-28 |
20160118341 | PRECUT METAL LINES - Embodiments of the present invention provide a method for cuts of sacrificial metal lines in a back end of line structure. Sacrificial Mx+1 lines are formed above metal Mx lines. A line cut lithography stack is deposited and patterned over the sacrificial Mx+1 lines and a cut cavity is formed. The cut cavity is filled with dielectric material. A selective etch process removes the sacrificial Mx+1 lines, preserving the dielectric that fills in the cut cavity. Precut metal lines are then formed by depositing metal where the sacrificial Mx+1 lines were removed. Thus embodiments of the present invention provide precut metal lines, and do not require metal cutting. By avoiding the need for metal cutting, the risks associated with metal cutting are avoided. | 2016-04-28 |
20160118342 | FUSE STRUCTURE AND METHOD OF BLOWING THE SAME - A fuse structure and a method of blowing the same are provided. The fuse structure includes a conductive line on a substrate, first and second vias on the conductive line that are spaced apart from each other, a cathode electrode line that is electrically connected to the first via, an anode electrode line that is electrically connected to the second via, and a dummy pattern that is adjacent at least one of the cathode and anode electrode lines and electrically isolated from the conductive line. | 2016-04-28 |
20160118343 | SEMICONDUCTOR DEVICE - Low-voltage side wirings LWA and LWB extend in X-direction, respectively, while meandering along a main surface of a semiconductor substrate SUB. A high-voltage side wiring HAW is opposed to the meandering low-voltage side wiring LWA, and a high-voltage side wiring HWB is opposed to the meandering low-voltage side wirings LWB. The high-voltage side wirings HWA and HWB include: X-direction extending parts XA and XB extending in X-direction; and a plurality of Y-direction extending parts YA and YB extending, respectively, in Y-direction. Toward a section of the low-voltage side wiring LWA being away from the X-direction extending part XA, the Y-direction extending part YA has entered. Also, toward a section of the low-voltage side wiring LWB being away from the X-direction extending part XB, the Y-direction extending part YB has entered. | 2016-04-28 |
20160118344 | Oversized Contacts and Vias in Layout Defined by Linearly Constrained Topology - A rectangular-shaped interlevel connection layout structure is defined to electrically connect a first layout structure in a first chip level with a second layout structure in a second chip level. The rectangular-shaped interlevel connection layout structure is defined by an as-drawn cross-section having at least one dimension larger than a corresponding dimension of either the first layout structure, the second layout structure, or both the first and second layout structures. A dimension of the rectangular-shaped interlevel connection layout structure can exceed a normal maximum size in one direction in exchange for a reduced size in another direction. The rectangular-shaped interlevel connection layout structure can be placed in accordance with a gridpoint of a virtual grid defined by two perpendicular sets of virtual lines. Also, the first and/or second layout structures can be spatially oriented and/or placed in accordance with one or both of the two perpendicular sets of virtual lines. | 2016-04-28 |
20160118345 | LOW TEMPATURE TUNGSTEN FILM DEPOSITION FOR SMALL CRITICAL DIMENSION CONTACTS AND INTERCONNECTS - Provided are methods of void-free tungsten fill of high aspect ratio features. According to various embodiments, the methods involve a reduced temperature chemical vapor deposition (CVD) process to fill the features with tungsten. In certain embodiments, the process temperature is maintained at less than about 350° C. during the chemical vapor deposition to fill the feature. The reduced-temperature CVD tungsten fill provides improved tungsten fill in high aspect ratio features, provides improved barriers to fluorine migration into underlying layers, while achieving similar thin film resistivity as standard CVD fill. Also provided are methods of depositing thin tungsten films having low-resistivity. According to various embodiments, the methods involve performing a reduced temperature low resistivity treatment on a deposited nucleation layer prior to depositing a tungsten bulk layer and/or depositing a bulk layer via a reduced temperature CVD process followed by a high temperature CVD process. | 2016-04-28 |
20160118346 | DEVICE EMBEDDED SUBSTRATE AND MANUFACTURING METHOD THEREOF - A device embedded substrate includes: an insulating layer; a first metal layer and a second metal layer that are formed such that the insulating layer is sandwiched therebetween; a device that is embedded in the insulating layer, and in which a connection terminal non-formation surface where a connection terminal is not formed is located on a side close to the first metal layer; an adhesive layer that is located on the connection terminal non-formation surface of the device; and a conductive via that electrically connects the second metal layer and the connection terminal of the device, wherein an area of the adhesive layer on a surface side in contact with the device is smaller than an area of the connection terminal non-formation surface of the device. | 2016-04-28 |
20160118347 | Semiconductor Device and Method - A system and method for a semiconductor device are provided. An embodiment comprises a dielectric layer, a hard mask layer over the dielectric layer, and a capping layer over the hard mask layer. A multi-patterning process is performed to form an interconnect using the capping layer as a mask to form an opening for the interconnect. | 2016-04-28 |
20160118348 | STRAIN DETECTION STRUCTURES FOR BONDED WAFERS AND CHIPS - Strain detection structures used with bonded wafers and chips and methods of manufacture are disclosed. The method includes forming lower metal wiring structures associated with a lower wafer structure. The method further includes bonding the lower wafer structure to an upper wafer structure and thinning the upper wafer, and forming upper metal wiring structures. The method further includes electrically linking the lower metal wiring structures to the upper metal wiring structures by formation of through silicon via structures to form an electrically connected chain extending between multiple wafer structures. The method further includes forming contacts to an outside environment which electrically contact two of the lower metal wiring structures. | 2016-04-28 |
20160118349 | SEMICONDUCTOR PACKAGE - A semiconductor package includes a dielectric layer, a plurality of traces, a plurality of electrical pads, a plurality of studs and at least a semiconductor device. The dielectric layer has a first dielectric surface and a second dielectric surface opposite the first dielectric surface. The traces are disposed in the dielectric layer and are exposed on the second dielectric surface. The electrical pads are disposed on the first dielectric surface. The studs are disposed in the dielectric layer and are exposed on the first dielectric surface. The studs are electrically connected to the traces and the electrical pads. The semiconductor device is disposed on the second dielectric surface and electrically connected to the traces. | 2016-04-28 |
20160118350 | INTERCONNECT ARRANGEMENT WITH STRESS-REDUCING STRUCTURE AND METHOD OF FABRICATING THE SAME - A semiconductor device structure and a method of fabricating the same are provided. The semiconductor structure includes a substrate and an interconnection structure formed over the substrate. The interconnection structure includes a first dielectric layer and a first stress-reducing structure formed in the first dielectric layer. The interconnection structure further includes a first conductive feature formed in the first dielectric layer, and the first conductive feature is surrounded by the first stress-reducing structure. | 2016-04-28 |
20160118351 | Interconnect Crack Arrestor Structure and Methods - A system and method for preventing cracks is provided. An embodiment comprises placing crack stoppers into a connection between a semiconductor die and a substrate. The crack stoppers may be in the shape of hollow or solid cylinders and may be placed so as to prevent any cracks from propagating through the crack stoppers. | 2016-04-28 |
20160118352 | SEMICONDUCTOR DEVICE - To improve reliability of a semiconductor device obtained through a dicing step. In a ring region, a first outer ring is provided outside a seal ring, and a second outer ring is provided outside the first outer ring. This can prevent a crack from reaching even the seal ring that exists in the ring region, for example, when a scribe region located outside the ring region is cut off by a dicing blade. | 2016-04-28 |
20160118353 | Systems and Methods Using an RF Circuit on Isolating Material - A device is disclosed that includes a wafer/chip, a first layer, a first device, an isolation mold and a second device. The first layer is formed over the chip and has non-isolating characteristics. The first device is formed over the first layer. In one example, it is formed only over the first layer. The isolation mold is formed over the chip. The isolation mold has isolating characteristics. The second device is formed substantially over the isolation mold. | 2016-04-28 |
20160118354 | MICROELECTRONIC PACKAGE UTILIZING MULTIPLE BUMPLESS BUILD-UP STRUCTURES AND THROUGH-SILICON VIAS - A microelectronic package having a first bumpless build-up layer structure adjacent an active surface and sides of a microelectronic device and a second bumpless build-up layer structure adjacent a back surface of the microelectronic device, wherein conductive routes are formed through the first bumpless build-up layer from the microelectronic device active surface to conductive routes in the second bumpless build-up layer structure and wherein through-silicon vias adjacent the microelectronic device back surface and extending into the microelectronic device are electrically connected to the second bumpless build-up layer structure conductive routes. | 2016-04-28 |
20160118355 | PLANAR PASSIVATION FOR PADS - Devices and methods for forming a device are presented. The method includes providing a substrate having circuit component and a dielectric layer over the substrate. The dielectric layer includes a plurality of inter level dielectric (ILD) layers and the uppermost dielectric layer includes at least one interconnect. A pad dielectric layer is provided over the uppermost ILD layer. A pad interconnect for receiving a wire bond is formed in the pad dielectric layer. The pad interconnect is coupled to the at least one interconnect of the uppermost ILD layer. A top surface of the pad dielectric layer is substantially coplanar with a top surface of the pad interconnect. A passivation layer is formed over the pad dielectric layer. | 2016-04-28 |
20160118356 | Interconnect Structure and Method of Forming Same - An apparatus comprises a dielectric layer formed on a first side of a substrate, a first side interconnect structure comprising a first metal line and a pad formed in the dielectric layer, wherein the pad comprises a bottom portion formed of a first conductive metal and an upper portion formed of a second conductive metal, and wherein sidewalls of the upper portion are surrounded by the bottom portion and a top surface of the pad is coplanar with a top surface of the first metal line and a passivation layer formed over the dielectric layer. | 2016-04-28 |
20160118357 | PACKAGED SEMICONDUCTOR DEVICE WITH INTERIOR POLYGONAL PADS - Embodiments of a packaged semiconductor device with interior polygon pads are disclosed. One embodiment includes a semiconductor chip and a package structure defining a rectangular boundary and having a bottom surface that includes interior polygonal pads exposed at the bottom surface of the package structure and located on a centerline of the bottom surface of the package structure and edge polygonal pads exposed at the bottom surface of the package structure, located at an edge of the rectangular boundary, and including one edge polygonal pad in the vicinity of each corner of the rectangular boundary. The interior polygonal pads are configured such that a line running between at least one vertex of each of the interior polygonal pads is parallel to an edge of the rectangular boundary of the package structure. | 2016-04-28 |
20160118358 | DIRECT INJECTION MOLDED SOLDER PROCESS FOR FORMING SOLDER BUMPS ON WAFERS - Solder bumps are provided on round wafers through the use of injection molded solder. Copper pillars or ball limiting metallurgy are formed over I/O pads within the channels of a patterned mask layer. Solder is injected over the pillars or BLM, filling the channels. Molten solder can be injected in cavities formed in round wafers without leakage using a carrier assembly that accommodates wafers that have been previously subjected to mask layer deposition and patterning. One such carrier assembly includes an elastomeric body portion having a round recess, the walls of the recess forming a tight seal with the round wafer. Other carrier assemblies employ adhesives applied around the peripheral edges of the wafers to ensure sealing between the carrier assemblies and wafers. | 2016-04-28 |
20160118359 | Interconnect Structures and Methods of Forming Same - Embodiments of the present disclosure include interconnect structures and methods of forming interconnect structures. An embodiment is an interconnect structure including a post-passivation interconnect (PPI) over a first substrate and a conductive connector on the PPI. The interconnect structure further includes a molding compound on a top surface of the PPI and surrounding a portion of the conductive connector, a top surface of the molding compound adjoining the conductive connector at an angle from about 10 degrees to about 60 degrees relative to a plane parallel with a major surface of the first substrate, the conductive connector having a first width at the adjoining top surface of the molding compound, and a second substrate over the conductive connector, the second substrate being mounted to the conductive connector. | 2016-04-28 |
20160118360 | Bump-on-Trace Design for Enlarge Bump-to-Trace Distance - A package includes a first and a second package component. The first package component includes a first metal trace and a second metal trace at the surface of the first package component. The second metal trace is parallel to the first metal trace. The second metal trace includes a narrow metal trace portion having a first width, and a wide metal trace portion having a second width greater than the first width connected to the narrow metal trace portion. The second package component is over the first package component. The second package component includes a metal bump overlapping a portion of the first metal trace, and a conductive connection bonding the metal bump to the first metal trace. The conductive connection contacts a top surface and sidewalls of the first metal trace. The metal bump is neighboring the narrow metal trace portion. | 2016-04-28 |
20160118361 | INTEGRATED CIRCUIT PACKAGE STRUCTURE AND INTERFACE AND CONDUCTIVE CONNECTOR ELEMENT FOR USE WITH SAME - Consistent with the present disclosure, a conductive connector element for use with a rigid or flexible insulating substrate to electrically couple first and second electrically conductive contact surfaces is provided. The conductive connector element comprises an electrically conductive deformable material and a shape-memory alloy. The conductive connector element is sized and shaped to fit in an opening provided through the insulating substrate and the shape-memory alloy and the electrically conductive deformable material are mechanically coupled such that a thermally induced deformation of the shape-memory alloy causes a mechanical deformation of the electrically conductive deformable material and thereby aids in the electrical coupling of the first and second electrically conductive contact surfaces through the connector element when the connector element is disposed in the opening provided through the insulating substrate. IC package structures and interfaces incorporating such conductive connector elements are also provided. | 2016-04-28 |
20160118362 | BONDING APPARATUS AND SUBSTRATE MANUFACTURING EQUIPMENT INCLUDING THE SAME - A bonding apparatus of substrate manufacturing equipment includes an upper stage, a lower stage facing the upper stage and which is configure and dedicated to support a processed substrate on which semiconductor chips are stacked (set), and an elevating mechanism for raising the lower stage relative to the upper stage to provide pressure for pressing the substrate and chips towards each other. | 2016-04-28 |
20160118363 | BONDING STAGE AND METHOD OF MANUFACTURING THE SAME - Provided is a bonding stage including: a rigid block ( | 2016-04-28 |
20160118364 | Integrated Circuit with a Thermally Conductive Underfill and Methods of Forming Same - An integrated circuit includes a substrate and at least one chip. Each chip is disposed over the substrate or the other chip. Solder bumps are disposed between the substrate and the at least one chip. An insulating film is disposed around the solder bumps and provides electrical insulation for the solder bumps except areas for interconnections. A thermally conductive underfill is disposed between the substrate, the at least one chip, and the solder bumps. | 2016-04-28 |
20160118365 | DIE ATTACHMENT FOR PACKAGED SEMICONDUCTOR DEVICE - A method for forming a packaged semiconductor device includes attaching a first major surface of a semiconductor die to a plurality of protrusions extending from a package substrate. A top surface of each protrusion has a die attach material, and the plurality of protrusions define an open region between the first major surface of the semiconductor die and the package substrate. Interconnects are formed between a second major surface of the semiconductor die and the package substrate in which the second major surface opposite the first major surface. An encapsulant material is formed over the semiconductor die and the interconnects. | 2016-04-28 |
20160118366 | Semiconductor Packages Including Heat Dissipation Parts - A semiconductor package includes a lower package with a lower substrate and a lower semiconductor chip. A heat dissipation part is provided adjacent to a side of the lower package and covers a portion of the lower semiconductor chip, and an upper package is on the lower package and is laterally spaced apart from the heat dissipation part. | 2016-04-28 |
20160118367 | REDISTRIBUTION LAYERS FOR MICROFEATURE WORKPIECES, AND ASSOCIATED SYSTEMS AND METHODS - Redistribution layers for microfeature workpieces, and associated systems and methods are disclosed. One method for processing a microfeature workpiece system includes positioning a pre-formed redistribution layer as a unit proximate to and spaced apart from a microfeature workpiece having an operable microfeature device. The method can further include attaching the redistribution layer to the microfeature workpiece and electrically coupling the redistribution layer to the operable microfeature device. | 2016-04-28 |
20160118368 | SEMICONDUCTOR DEVICE - A semiconductor device includes a first semiconductor chip that includes a first main surface, a first inductor formed on the first main surface, and a first external connection terminal formed on the first main surface; a second semiconductor chip that includes a second main surface, a second inductor formed on the second main surface, a second external connection terminal formed on the second main surface; and a first insulating film that is located between the first semiconductor chip and the second semiconductor chip, wherein the first semiconductor chip and the second semiconductor chip overlap each other such that the first main surface and the second main face each other, the semiconductor device includes a facing region in which the first semiconductor chip and the second semiconductor chip overlap each other when seen in a plan view. | 2016-04-28 |
20160118369 | Package-on-Package Structure with Through Molding Via - Disclosed herein is a device comprising a first package having a first side with a plurality of connectors disposed thereon and a second package mounted on the first package by the connectors. A molding compound is disposed on the first side of the first package and between the first package and the second package. A plurality of stress relief structures (SRSs) are disposed in the molding compound, the plurality of SRSs each comprising a cavity free of metal in the molding compound and spaced apart from each of the plurality of connectors. | 2016-04-28 |
20160118370 | DISPLAY DEVICE - A display device is disclosed, which comprises: a first substrate; a second substrate disposed adjacent to the first substrate and partially covering the first substrate, wherein the second substrate comprises a second arc edge and a second side, and the second arc edge connects to the second side; a driving unit disposed on a part of the first substrate uncovered with the second substrate; and a compensation panel disposed on the driving unit and comprising a third arc edge and a third side, wherein the third arc edge connects to the third side, wherein the third side corresponds to the second side, and the third arc edge corresponds to the second arc edge. | 2016-04-28 |
20160118371 | SEMICONDUCTOR PACKAGE - A semiconductor package includes a package substrate, a first semiconductor chip having a plurality of first connection terminals disposed on a bottom surface thereof, and a second semiconductor chip having a plurality of second connection terminals disposed on a top surface thereof. The first semiconductor chip is stacked on the package substrate so that a first group of connection terminals among the plurality of first connection terminals are combined with the package substrate. The second semiconductor chip is disposed so that the plurality of second connection terminals are combined with a second group of connection terminals among the plurality of first connection terminals. | 2016-04-28 |
20160118372 | MECHANISMS FOR FORMING PACKAGE STRUCTURE - A method for forming a package structure is provided. The method includes forming a plurality of conductive columns over a carrier substrate and forming an interfacial layer over sidewalls and tops of the conductive columns. The method also includes disposing a semiconductor die over a planar portion of the interfacial layer. The method further includes forming a molding compound to partially or completely encapsulate the semiconductor die, the conductive columns, and the interfacial layer such that the molding compound is in direct contact with the interfacial layer. | 2016-04-28 |
20160118373 | MULTIPLE DIE LEAD FRAME PACKAGING - First and second semiconductor die are mounted to first and second die pads of a lead frame disposed in a lead frame sheet. With a plurality of wire bonds, each post of a plurality of posts of the lead frame is connected to the first and second semiconductor die. Each post extends inward from opposite sides of the lead frame between the first and second die pads and is connected with a respective one of a plurality of leads of the lead frame. The first and second semiconductor die, the plurality of posts of the lead frame, and the plurality of wire bonds are encapsulated in a package. The lead frame sheet is sheared to define each lead of the plurality of leads. The plurality of posts includes first and second sets of posts extending inward from first and second opposite sides of the lead frame. | 2016-04-28 |
20160118374 | ELECTROSTATIC DISCHARGE PROTECTION STRUCTURE CAPABLE OF PREVENTING LATCH-UP ISSUE CAUSED BY UNEXPECTED NOISE - An electrostatic discharge protection structure comprises an isolation layer, a high voltage P-well, an N-well, a P-well, a first doped region of N-type conductivity, a second doped region of P-type conductivity, a third doped region of N-type conductivity, a fourth doped region of P-type conductivity, an anode, and a cathode. The isolation layer is disposed on a substrate. The high voltage P-well is disposed on the isolation layer. The N-well is disposed in the high voltage P-well. The P-well is disposed in the high voltage P-well, and the P-well is separated from the N-well. The first and the second doped regions are disposed in the N-well. The third and the fourth doped regions are disposed in the P-well. The anode is electrically connected to the first doped region and the second doped region, and the cathode is electrically connected to the fourth doped region. | 2016-04-28 |
20160118375 | SEMICONDUCTOR INTEGRATED CIRCUIT - A first power line configured to receive a first voltage, a second power line configured to receive a second voltage which is lower than the first voltage, a first clamping unit configured to be connected to the first power line, a second clamping unit configured to be connected between the first clamping unit and the second power line, and a discharging unit configured to, when an abnormal voltage introduced through the first power line or the second power line is applied, discharge the abnormal voltage by coupling with the first clamping unit or the second clamping unit are included. | 2016-04-28 |
20160118376 | SEMICONDUCTOR INTEGRATED CIRCUIT - A first power line configured to receive a first voltage, a second power line configured to receive a second voltage which is lower than the first voltage, a first clamping unit configured to be connected to the first power line, a second clamping unit configured to be connected between the first clamping unit and the second power line, and a discharging unit configured to, when an abnormal voltage introduced through the first power line or the second power line is applied, discharge the abnormal voltage by coupling with the first clamping unit or the second clamping unit are included. | 2016-04-28 |
20160118377 | METHOD OF FORMING A HIGH ELECTRON MOBILITY SEMICONDUCTOR DEVICE AND STRUCTURE THEREFOR - In one embodiment, a method of forming a semiconductor device can comprise; forming a HEM device on a semiconductor substrate. The semiconductor substrate provides a current carrying electrode for the semiconductor device and one or more internal conductor structures provide a vertical current path between the semiconductor substrate and regions of the HEM device. | 2016-04-28 |
20160118378 | SEMICONDUCTOR DEVICE AND METHOD OF OPERATING THE SAME AND STRUCTURE FOR SUPPRESSING CURRENT LEAKAGE - A structure for suppressing current leakage and a semiconductor device including the same are provided. The structure for suppressing current leakage includes a substrate of a first conductivity type, a well region of the first conductivity type, an isolation structure and a PN junction diode. The well region is disposed in the substrate. The isolation structure is disposed on the well region. The PN junction diode is disposed on the isolation structure and configured to suppress current leakage of the semiconductor device. | 2016-04-28 |
20160118379 | CASCODE SEMICONDUCTOR DEVICE STRUCTURE AND METHOD THEREFOR - In one embodiment, a cascode rectifier structure includes a group III-V semiconductor structure includes a heterostructure disposed on a semiconductor substrate. A first current carrying electrode and a second current carrying electrode are disposed adjacent a major surface of the heterostructure and a control electrode is disposed between the first and second current carrying electrode. A rectifier device is integrated with the group III-V semiconductor structure and is electrically connected to the first current carrying electrode and to a third electrode. The control electrode is further electrically connected to the semiconductor substrate and the second current path is generally perpendicular to a primary current path between the first and second current carrying electrodes. | 2016-04-28 |
20160118380 | INTEGRATED SNUBBER IN A SINGLE POLY MOSFET - Aspects of the present disclosure describe MOSFET devices that have snubber circuits. The snubber circuits comprise one or more resistors with a dynamically controllable resistance that is controlled by changes to a gate and/or drain potentials of the one or more MOSFET structures during switching events. | 2016-04-28 |
20160118381 | HYBRID WIDE-BANDGAP SEMICONDUCTOR BIPOLAR SWITCHES - A hybrid semiconductor bipolar switch in which a normally-on high-voltage wide-bandgap semiconductor bipolar switch and a normally-off field effect transistor are connected in a cascode (Baliga-pair) configuration. The switch may be constructed as a stacked hybrid device where a discrete transistor is bonded on top of a bipolar switch. Power systems may use plural switches paired with anti-parallel diodes. | 2016-04-28 |
20160118382 | Method of Manufacturing a Reverse Blocking Semiconductor Device - A reverse blocking semiconductor device is manufactured by introducing impurities of a first conductivity type into a semiconductor substrate of the first conductivity type through a process surface to obtain a process layer extending into the semiconductor substrate up to a first depth, and introducing impurities of a second, complementary conductivity type into the semiconductor substrate through openings of an impurity mask provided on the process surface to obtain emitter zones of the second conductivity type extending up to a second depth deeper than the first depth and channels of the first conductivity type between the emitter zones. Exposed portions of the process layer are removed above the emitter zones. | 2016-04-28 |
20160118383 | SEMICONDUCTOR DEVICE - A semiconductor device includes an antenna functioning as a coil, a capacitor electrically connected to the antenna in parallel, a passive element forming a resonance circuit with the antenna and the capacitor by being electrically connected to the antenna and the capacitor in parallel, a first field effect transistor controlling whether the passive element is electrically connected to the antenna and the capacitor in parallel or not, and a memory circuit. The memory circuit includes a second field effect transistor which includes an oxide semiconductor layer where a channel is formed and in which a data signal is input to one of a source and a drain. The gate voltage of the first field effect transistor is set depending on the voltage of the other of the source and the drain of the second field effect transistor. | 2016-04-28 |
20160118384 | SELF-ALIGNED CONTACT METALLIZATION FOR REDUCED CONTACT RESISTANCE - Techniques are disclosed for forming low contact resistance transistor devices. A p-type germanium layer is provided between p-type source/drain regions and their respective contact metals, and an n-type III-V semiconductor material layer is provided between n-type source/drain regions and their respective contact metals. The n-type III-V semiconductor material layer may have a small bandgap (e.g., <0.5 eV) and/or otherwise be doped to provide desired conductivity, and the p-type germanium layer can be doped, for example, with boron. After deposition of the III-V material over both the n-type source/drain regions and the germanium covered p-type source/drain regions, an etch-back process can be performed to take advantage of the height differential between n and p type regions to self-align contact types and expose the p-type germanium over p-type regions and thin the n-type III-V material over the n-type regions. The techniques can be used on planar and non-planar transistor architectures. | 2016-04-28 |
20160118385 | REPLACEMENT GATE STRUCTURES FOR TRANSISTOR DEVICES - A transistor device includes a gate structure positioned above a semiconductor substrate and spaced-apart sidewall spacers positioned above the substrate and adjacent sidewalls of the gate structure, wherein an internal sidewall surface of each of the spaced-apart sidewall spacers has a stepped cross-sectional configuration | 2016-04-28 |
20160118386 | SEMICONDUCTOR STRUCTURE HAVING FINFET ULTRA THIN BODY AND METHODS OF FABRICATION THEREOF - In one aspect there is set forth herein a semiconductor structure having fins extending upwardly from an ultrathin body (UTB). In one embodiment a multilayer structure can be disposed on a wafer and can be used to pattern voids extending from a UTB layer of the wafer. Selected material can be formed in the voids to define fins extending upward from the UTB layer. In one embodiment silicon (Si) can be grown within the voids to define the fins. In one embodiment, germanium based material can be grown within the voids to define the fins. | 2016-04-28 |
20160118387 | SEMICONDUCTOR DEVICE WITH A BURIED OXIDE STACK FOR DUAL CHANNEL REGIONS AND ASSOCIATED METHODS - A method for making a semiconductor device includes forming a buried oxide stack on a semiconductor wafer. The buried oxide stack includes a first oxide layer, a nitride layer on the first oxide layer, and a second oxide layer on the nitride layer. A semiconductor layer is formed on the second oxide layer. First and second channel regions are formed in the semiconductor layer. | 2016-04-28 |
20160118388 | METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE - A first space partitioned by first and second line patters ( | 2016-04-28 |
20160118389 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE - A semiconductor device having a high degree of freedom of layout has a first part AR | 2016-04-28 |
20160118390 | Structure and Method for FinFET SRAM - Provided is an embedded FinFET SRAM structure and methods of making the same. The embedded FinFET SRAM structure includes an array of SRAM cells. The SRAM cells have a first pitch in a first direction and a second pitch in a second direction orthogonal to the first direction. The first and second pitches are configured so as to align fin active lines and gate features of the SRAM cells with those of peripheral logic circuits. A layout of the SRAM structure includes three layers, wherein a first layer defines mandrel patterns for forming fins, a second layer defines a first cut pattern for removing dummy fins, and a third layer defines a second cut pattern for shortening fin ends. The three layers collectively define fin active lines of the SRAM structure. | 2016-04-28 |
20160118391 | DEUTERIUM ANNEAL OF SEMICONDUCTOR CHANNELS IN A THREE-DIMENSIONAL MEMORY STRUCTURE - A monolithic three-dimensional memory structure includes a memory stack structure including a memory film and a semiconductor channel. Traps and/or defects within the semiconductor channel and/or at the semiconductor/dielectric material interface and/or inside dielectric materials can be passivated by an anneal in a deuterium-containing gas, which replaces hydrogen atoms within the semiconductor channel or passivate the dangling bonds/traps with deuterium atoms. The anneal may be performed immediately after formation of the semiconductor channel, before or after formation of a dielectric core or a drain region, after replacement of sacrificial material layers with conductive material layers, after dicing of a substrate into semiconductor chips, or at another suitable processing step. | 2016-04-28 |
20160118392 | CHARGE STORAGE APPARATUS AND METHODS - Methods of forming multi-tiered semiconductor devices are described, along with apparatus and systems that include them. In one such method, an opening is formed in a tier of semiconductor material and a tier of dielectric. A portion of the tier of semiconductor material exposed by the opening is processed so that the portion is doped differently than the remaining semiconductor material in the tier. At least substantially all of the remaining semiconductor material of the tier is removed, leaving the differently doped portion of the tier of semiconductor material as a charge storage structure. A tunneling dielectric is formed on a first surface of the charge storage structure and an intergate dielectric is formed on a second surface of the charge storage structure. Additional embodiments are also described. | 2016-04-28 |