19th week of 2015 patent applcation highlights part 45 |
Patent application number | Title | Published |
20150126002 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE - There is provided a semiconductor device and a method for manufacturing a semiconductor device. Within the N-type semiconductor layer formed from a high resistance N-type substrate, the P-type well diffusion layer and P-type extraction layer are formed and are fixed to ground potential. Due thereto, a depletion layer spreading on the P-type well diffusion layer side does not reach the interlayer boundary between the P-type well diffusion layer and the buried oxide film. Hence, the potential around the surface of the P-type well diffusion layer is kept at a ground potential. Accordingly, when the voltages are applied to the backside of the N-type semiconductor layer and a cathode electrode, a channel region at the MOS-type semiconductor formed as a P-type semiconductor layer is not activated. Due thereto, leakage current that may occur independently of a control due to the gate electrode of a transistor can be suppressed. | 2015-05-07 |
20150126003 | METHOD FOR THE FORMATION OF FIN STRUCTURES FOR FINFET DEVICES - A SOI substrate layer formed of a silicon semiconductor material includes adjacent first and second regions. A portion of the silicon substrate layer in the second region is removed such that the second region retains a bottom portion made of the silicon semiconductor material. An epitaxial growth of a silicon-germanium semiconductor material is made on the bottom portion to produce a silicon-germanium region. The silicon region is patterned to define a first fin structure of a FinFET of a first (for example, n-channel) conductivity type. The silicon-germanium region is also patterned to define a second fin structure of a FinFET of a second (for example, p-channel) conductivity type. | 2015-05-07 |
20150126004 | Method for Keyhole Repair in Replacement Metal Gate Integration Through the Use of a Printable Dielectric - A method of fabricating a FET device is provided that includes the following steps. A wafer is provided. At least one active area is formed in the wafer. A plurality of dummy gates is formed over the active area. Spaces between the dummy gates are filled with a dielectric gap fill material such that one or more keyholes are formed in the dielectric gap fill material between the dummy gates. The dummy gates are removed to reveal a plurality of gate canyons in the dielectric gap fill material. A mask is formed that divides at least one of the gate canyons, blocks off one or more of the keyholes and leaves one or more of the keyholes un-blocked. At least one gate stack material is deposited onto the wafer filling the gate canyons and the un-blocked keyholes. A FET device is also provided. | 2015-05-07 |
20150126005 | PHOTORESIST COMPOSITION AND METHOD OF MANUFACTURING THIN FILM TRANSISTOR SUBSTRATE USING THE SAME - A photoresist composition may include a novolac resin, a diazide-based photosensitive compound, a surfactant represented by Chemical Formula 1 below, and a solvent. | 2015-05-07 |
20150126006 | MANUFACTURING METHOD OF ARRAY SUBSTRATE - A manufacturing method of an array substrate includes following steps. A first photolithography process is performed to form a gate electrode on a substrate. A gate insulating layer is formed to cover the substrate and the gate electrode. A second photolithography process is performed to form a patterned semiconductor layer and a patterned etching stop layer. A semiconductor layer and an etching stop layer are successively formed on the gate insulating layer, and a second patterned photoresist is formed on the etching stop layer. The etching stop layer uncovered by the second patterned photoresist is removed. The semiconductor layer uncovered by the second patterned photoresist is removed for forming the patterned semiconductor on the gate insulating layer. A patterned etching stop layer is formed on the patterned semiconductor layer by etching the second patterned photoresist and the etching stop layer. | 2015-05-07 |
20150126007 | Methods of Manufacturing Three-Dimensional Semiconductor Memory Devices - Methods of manufacturing a three-dimensional semiconductor device are provided. The method includes: forming a thin film structure, where first and second material layers of at least 2n (n is an integer more than 2) are alternately and repeatedly stacked, on a substrate; wherein the first material layer applies a stress in a range of about 0.1×109 dyne/cm | 2015-05-07 |
20150126008 | METHODS OF FORMING STRESSED MULTILAYER FINFET DEVICES WITH ALTERNATIVE CHANNEL MATERIALS - Disclosed are methods and devices that involve formation of alternating layers of different semiconductor materials in the channel region of FinFET devices. The methods involve forming such alternating layers of different semiconductor materials in a cavity formed above the substrate fin and thereafter forming a gate structure around the fin using gate first or gate last techniques. | 2015-05-07 |
20150126009 | U-SHAPED SEMICONDUCTOR STRUCTURE - A method for forming a U-shaped semiconductor device includes growing a U-shaped semiconductor material along sidewalls and bottoms of trenches, which are formed in a crystalline layer. The U-shaped semiconductor material is anchored, and the crystalline layer is removed. Backfilling is formed underneath the U-shaped semiconductor material with a dielectric material for support. A semiconductor device is formed with the U-shaped semiconductor material. | 2015-05-07 |
20150126010 | Band Engineered Semiconductor Device and Method for Manufacturing Thereof - The disclosure is related to a band engineered semiconductor device comprising a substrate and a protruding structure that is formed in a recess in the substrate. The protruding structure extends above the recess and has a buried portion and an extended portion. At least the extended portion comprises a semiconductor material having an inverted ‘V’ band gap profile with a band gap value increasing gradually from a first value at lateral edges of the structure to a second value, higher than the first value, in a center of the structure. The disclosure is also related to the method of manufacturing of such a band engineered semiconductor device. | 2015-05-07 |
20150126011 | NITRIDE SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME - According to one embodiment, a nitride semiconductor device includes a substrate; semiconductor stacked layers including a nitride semiconductor provided on the substrate, and having a buffer layer, a carrier running layer provided on the buffer layer, and a barrier layer provided on the carrier running layer; a source electrode and a drain electrode provided on the semiconductor stacked layers and in contact with the semiconductor stacked layers; and a gate electrode provided on the semiconductor stacked layers and provided between the source electrode and the drain electrode. | 2015-05-07 |
20150126012 | SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME - A method of forming a semiconductor device includes forming a gate structure including a polysilicon gate and forming a capping spacer on a side surface of the gate structure to prevent parasitic epitaxial growth on the side surface of the polysilicon gate. | 2015-05-07 |
20150126013 | SEMICONDUCTOR DEVICE INCLUDING AIR GAPS AND METHOD FOR FABRICATING THE SAME - Disclosed are a semiconductor device capable of reducing parasitic capacitance between adjacent conductive structures and a method for fabricating the same. The semiconductor device includes a plurality of bit line structures each comprising a first contact plug formed over a substrate and a bit line formed over the first contact plug. A spacer structure having air gaps is formed on sidewalls of the first contact plug and on sidewalls of the bit line. An plug isolation layer is formed between the plurality of bit line structures. The isolation layer includes an opening. A second contact plug is formed in the opening and a memory element is formed over the second contact plug. | 2015-05-07 |
20150126014 | METHOD FOR MANUFACTURING RESISTIVE RANDOM ACCESS STORAGE UNIT - A manufacturing method of a resistive random access storage unit, includes: forming a resistance layer on a first metal layer having a flat surface; forming a passivation layer on the resistance layer; performing an etching process to obtain a plurality of basic units, a basic unit comprising a first metal layer, a resistance layer, and a passivation layer, which are laminated sequentially; depositing a insulating dielectric layer, and flattening the insulating dielectric layer; etching the insulating dielectric layer and the passivation layer to form contacting holes corresponded to the basic units; filling metal wires in the contacting holes; forming a second metal layer. According to the above method, a uniformly distributed resistance can be formed on a whole wafer. | 2015-05-07 |
20150126015 | SEMICONDUCTOR PROCESS - A semiconductor structure includes a substrate, a resist layer, a dielectric material, two U-shaped metal layers and two metals. The substrate has an isolation structure. The resist layer is located on the isolation structure. The dielectric material is located on the resist layer. Two U-shaped metal layers are located at the two sides of the dielectric material and on the resist layer. Two metals are respectively located on the two U-shaped metal layers. This way a semiconductor process for forming said semiconductor structure is provided. | 2015-05-07 |
20150126016 | Methods of Forming Capacitors - A method of forming capacitors includes forming support material over a substrate. A first capacitor electrode is formed within individual openings in the support material. A first etching is conducted only partially into the support material using a liquid etching fluid to expose an elevationally outer portion of sidewalls of individual of the first capacitor electrodes. A second etching is conducted into the support material using a dry etching fluid to expose an elevationally inner portion of the sidewalls of the individual first capacitor electrodes. A capacitor dielectric is formed over the outer and inner portions of the sidewalls of the first capacitor electrodes. A second capacitor electrode is formed over the capacitor dielectric. | 2015-05-07 |
20150126017 | SYSTEMS AND METHODS FOR ULTRASONICALLY CLEAVING A BONDED WAFER PAIR - Methods for the ultrasonic cleaving of bonded wafer pairs include positioning the bonded wafer pair in a wafer holder disposed in a tank containing a volume of liquid and ultrasonically agitating the volume of liquid in the tank with an ultrasonic agitator. The ultrasonic agitation of the volume of liquid cleaves the bonded wafer pair into a handle wafer and a silicon-on-insulator wafer. | 2015-05-07 |
20150126018 | METHOD FOR MANUFACTURING NITRIDE SEMICONDUCTOR DEVICE - The invention provides a method for manufacturing a nitride semiconductor device that grows a multilayer film of a III-V group nitride semiconductor in a reaction furnace into which a III group element raw material gas and a V group element raw material gas are introduced, the method including: growing a first nitride semiconductor layer at a first raw material gas flow rate of the V group element raw material gas and a first carrier gas flow rate; and growing a second nitride semiconductor layer at a second raw material gas flow rate of the V group element raw material gas lower than the first raw material gas flow rate and a second carrier gas flow rate higher than the first carrier gas flow rate, wherein the first nitride semiconductor layer and the second nitride semiconductor layer are stacked. | 2015-05-07 |
20150126019 | METHOD FOR FABRICATING ACTIVE MATRIX SUBSTRATE AND METHOD FOR FABRICATING DISPLAY DEVICE - A gate line is formed on a pixel region, and a plurality of wiring layers are formed on a frame region. Next, a gate insulating layer and a semiconductor material layer are formed to cover the wiring layers and the gate line. Next, a first resist is formed to cover a portion of the semiconductor material layer over the pixel region, and second resists are formed to individually cover portions of the gate insulating layer between adjacent pairs of the wiring layers. Next, portions of the semiconductor material layer exposed from the first and second resists and are etched by dry etching to form semiconductor layers of semiconductor elements. | 2015-05-07 |
20150126020 | METHOD TO IMPROVE RELIABILITY OF REPLACEMENT GATE DEVICE - A method of fabricating a replacement gate stack for a semiconductor device includes the following steps after removal of a dummy gate: growing a high-k dielectric layer over the area vacated by the dummy gate; depositing a thin metal layer over the high-k dielectric layer; depositing a sacrificial layer over the thin metal layer; performing a first rapid thermal anneal; removing the sacrificial layer; and depositing a metal layer of low resistivity metal for gap fill. | 2015-05-07 |
20150126021 | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE AND SUBSTRATE PROCESSING APPARATUS - A film is formed on a substrate by performing a cycle at least twice, the cycle including a nucleus formation process for forming nuclei on the substrate and a nucleus growth suppression process for suppressing growth of the nuclei. A time required for the nucleus growth suppression process is less than or equal to a time required for the nucleus formation process. Alternatively, the nucleus formation process is further performed after the cycle is repeatedly performed a plurality of times. | 2015-05-07 |
20150126022 | METHOD FOR FORMING ELECTRODE OF N-TYPE NITRIDE SEMICONDUCTOR, NITRIDE SEMICONDUCTOR DEVICE, AND MANUFACTURING METHOD THEREOF - According to an example embodiment, a method includes forming a nitrogen vacancy surface layer by treating a surface of an n-type nitride semiconductor with inert gas plasma, and forming an oxygen-added nitride film by treating a surface of the nitrogen vacancy surface layer with oxygen-containing gas plasma, and forming an electrode on the oxygen-added nitride film. The nitrogen vacancy surface layer lacks a nitrogen element. | 2015-05-07 |
20150126023 | METHODS OF FORMING GATE STRUCTURES WITH MULTIPLE WORK FUNCTIONS AND THE RESULTING PRODUCTS - One illustrative method disclosed herein includes removing sacrificial gate structures for NMOS and PMOS transistors to thereby define NMOS and PMOS gate cavities, forming a high-k gate insulation layer in the NMOS and PMOS gate cavities, forming a lanthanide-based material layer on the high-k gate insulation layer in the NMOS and PMOS gate cavities, performing a heating process to drive material from the lanthanide-based material layer into the high-k gate insulation layer so as to thereby form a lanthanide-containing high-k gate insulation layer in each of the NMOS and PMOS gate cavities, and forming gate electrode structures above the lanthanide-containing high-k gate insulation layer in the NMOS and PMOS gate cavities. | 2015-05-07 |
20150126024 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - A semiconductor device of an embodiment includes a semiconductor layer formed of a III-V group nitride semiconductor, a first silicon nitride film formed on the semiconductor layer, a gate electrode formed on the first silicon nitride film, a source electrode and a drain electrode formed on the semiconductor layer such that the gate electrode is interposed between the source electrode and the drain electrode, and a second silicon nitride film formed between the source electrode and the gate electrode and between the drain electrode and the gate electrode and having an oxygen atom density lower than that of the first silicon nitride film. | 2015-05-07 |
20150126025 | INTERFACE-FREE METAL GATE STACK - A gate stack for a transistor is formed by a process including forming a high dielectric constant layer on a semiconductor layer. A metal layer is formed on the high dielectric constant layer. A silicon containing layer is formed over the metal layer. An oxidized layer incidentally forms during the silicon containing layer formation and resides on the metal layer beneath the silicon containing layer. The silicon containing layer is removed. The oxidized layer residing on the metal layer is removed after removing the silicon containing layer. | 2015-05-07 |
20150126026 | ELECTRICAL COMPONENTS AND METHODS AND SYSTEMS OF MANUFACTURING ELECTRICAL COMPONENTS - A method of manufacturing an electrical component includes providing a substrate, applying an insulating layer on the substrate, applying a circuit layer on the insulating layer, irradiating the insulating layer with an electron beam to transform the insulating layer, and irradiating the circuit layer with an electron beam to transform the circuit layer. The substrate may be a metallic substrate that is highly thermally conductive. The insulating layer provides electrical isolation and effective heat transfer between the circuit layer and the substrate. The method may include coupling a light emitting diode module or other active circuits requiring thermal management to the circuit layer resident on the electrically insulating/thermally conducting layer. | 2015-05-07 |
20150126027 | METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE - A method for manufacturing a semiconductor device includes: forming an insulating film on a substrate where a first conductive film is formed; forming a recess in the insulating film such that the first conductive film is exposed in a portion of the recess; forming a metal oxide film to cover the insulating film and the first conductive film after forming a recess; performing a hydrogen radical treatment of irradiating the substrate with atomic hydrogen after forming a metal oxide film; and forming a second conductive film in the recess. | 2015-05-07 |
20150126028 | METHODS FOR FABRICATING INTEGRATED CIRCUITS USING SURFACE MODIFICATION TO SELECTIVELY INHIBIT ETCHING - Methods for fabricating integrated circuits are provided in various exemplary embodiments. In one embodiment, a method for fabricating an integrated circuit includes providing a semiconductor substrate having a first exposed surface including an elemental metal material and a second exposed surface including a barrier material. The elemental metal material has a first etch rate when exposed to a wet etchant and the barrier material has a second etch rate when exposed to the wet etchant. Further, the method includes modifying the first exposed surface to form a modified first exposed surface so as to reduce the first etch rate when exposed to the wet etchant and applying the wet etchant simultaneously to the modified first exposed surface and to the second exposed surface. | 2015-05-07 |
20150126029 | DRY FILM PHOTORESIST, MANUFACTURING METHOD OF DRY FILM PHOTORESIST, METAL PATTERN FORMING METHOD AND ELECTRONIC COMPONENT - There is provided a dry film photoresist including a substrate layer constituted by a certain substrate, a resist layer disposed over the substrate layer, the resist layer including a plurality of layers, and a protective film layer disposed over the resist layer, the protective film layer protecting the resist layer. A photosensitive layer is positioned on a side of the substrate layer of the resist layer, the photosensitive layer having a dissolution rate to a certain developer that decreases by being exposed to light, and a non-photosensitive layer is positioned on a side of the protective film layer of the resist layer, the non-photosensitive layer being soluble to the developer. A dissolution rate of the non-photosensitive layer to the developer is higher than a dissolution rate of an unexposed portion in the photosensitive layer to the developer. | 2015-05-07 |
20150126030 | Method for Via Plating with Seed Layer - Presented herein is a method for plating comprising providing a substrate having a dielectric layer formed over a trace, and forming a via/trench opening extending through the dielectric layer, the via/trench opening exposing a surface of the trace. The method further comprises forming a seed layer in the via/trench opening and contacting the trace and forming a protection layer over the seed layer. The protection layer is removed and a conductive layer deposited on the seed layer in a single plating process step by applying a plating solution in the via/trench opening. | 2015-05-07 |
20150126031 | ARTICLE AND PROCESS FOR SELECTIVE DEPOSITION - A process for depositing a metal includes disposing an activating catalyst on a substrate; contacting the activating catalyst with a metal cation from a vapor deposition composition; contacting the substrate with a reducing anion from the vapor deposition composition; performing an oxidation-reduction reaction between the metal cation and the reducing anion in a presence of the activating catalyst; and forming a metal from the metal cation to deposit the metal on the substrate. A system for depositing a metal includes an activating catalyst to deposit on a substrate; and a primary reagent to form: a metal cation to deposit on the substrate as a metal; and a reducing anion to provide electrons to the activating catalyst, the metal cation, the substrate, or a combination thereof, wherein the primary reagent forms the metal cation and the reducing anion in response to being subjected to a dissociating condition | 2015-05-07 |
20150126032 | METHODS FOR FABRICATING INTEGRATED CIRCUITS INCLUDING GENERATING E-BEAM PATTERNS FOR DIRECTED SELF-ASSEMBLY - Methods for fabricating integrated circuits are provided. In one example, a method for fabricating an integrated circuit includes generating an e-beam pattern for forming a DSA directing pattern on a semiconductor substrate. The DSA directing pattern is configured to guide a self-assembly material deposited thereon that undergoes directed self-assembly (DSA) to form a DSA pattern. Generating the e-beam pattern includes using a computing system, inputting a DSA target pattern. Using the computing system, the DSA target pattern, a DSA model, and an EBPC model, an output EBPCed pattern is produced for an e-beam writer to write on a resist layer that overlies the semiconductor substrate. | 2015-05-07 |
20150126033 | METHOD FOR DEEP SILICON ETCHING USING GAS PULSING - Techniques disclosed herein include methods for etching deep silicon features using a continuous gas pulsing process that etches high aspect ratio features having a relatively smooth profile. Such methods provide an etch rate faster than time-multiplexed etch-deposition processes. Techniques include using a continuous process that comprises a cyclic gas-pulsing process of alternating chemistries. One process gas mixture includes a halogen-containing silicon gas and oxygen that creates an oxide layer. A second process gas mixture includes a halogen-containing gas and a fluorocarbon gas that etches oxide and silicon. | 2015-05-07 |
20150126034 | METHODS FOR FABRICATING INTEGRATED CIRCUITS INCLUDING TOPOGRAPHICAL FEATURES FOR DIRECTED SELF-ASSEMBLY - Methods for fabricating integrated circuits are provided. In one example, a method for fabricating an integrated circuit includes forming etch resistant fill control topographical features that overlie a semiconductor substrate. The etch resistant fill control topographical features define an etch resistant fill control confinement well. A block copolymer is deposited into the etch resistant fill control confinement well. The block copolymer is phase separated into an etchable phase and an etch resistant phase. The etch resistant fill control topographical features direct the etch resistant phase to form an etch resistant plug in the etch resistant fill control confinement well. | 2015-05-07 |
20150126035 | Novel Mask Removal Process Strategy for Vertical NAND Device - A method for removing a doped amorphous carbon mask from a semiconductor substrate is disclosed. The method comprises generating a plasma to be used in treating the substrate, wherein the plasma comprises an oxygen containing gas, a halogen containing gas, and a hydrogen containing gas; and treating the substrate by exposing the substrate to the plasma. The doped amorphous carbon mask can be a boron doped amorphous carbon mask or a nitrogen doped amorphous carbon mask. The method can result in a mask removal rate ranging from about 1,000 Ångströms/minute to about 12,000 Ångströms/minute. Further, gases can be applied to the substrate before plasma treatment, after plasma treatment, or both to reduce the amount of defects or pinholes found in the substrate film. | 2015-05-07 |
20150126036 | CONTROLLING ETCH RATE DRIFT AND PARTICLES DURING PLASMA PROCESSING - The invention is an plasma processing system with a plasma chamber for processing semiconductor substrates, comprising: a radio frequency or microwave power generator coupled to the plasma chamber; a low pressure vacuum system coupled to the plasma chamber; and at least one chamber surface that is configured to be exposed to a plasma, the chamber surface comprising: a YxOyFz layer that comprises Y in a range from 20 to 40%, O in a range from ≦60%, and F in a range of ≦75%. Alternatively, the YxOyFz layer can comprise Y in a range from 25 to 40%, O in a range from 40 to 55%, and F in a range of 5 to 35% or Y in a range from 25 to 40%, O in a range from 5 to 40%, and F in a range of 20 to 70%. | 2015-05-07 |
20150126037 | NON-AMBIPOLAR PLASMA EHNCANCED DC/VHF PHASOR - This disclosure relates to a plasma processing system for controlling plasma density across a substrate and maintaining a tight ion energy distribution within the plasma. In one embodiment, this may include using a dual plasma chamber system including a non-ambipolar plasma chamber and a DC plasma chamber adjacent to the non-ambipolar system. The DC plasma chamber provide power to generate the plasma by rotating the incoming power between four inputs from a VHF power source. In one instance, the power to each of the four inputs are at least 90 degrees out of phase from each other. | 2015-05-07 |
20150126038 | PLASMA PROCESSING APPARATUS AND METHOD THEREFOR - A dry etching apparatus plasma processes a wafer held by a carrier having a frame and an holding sheet. A electrode unit of a stage includes an electrostatic chuck. An area of an upper surface of the electrostatic chuck onto which the wafer is placed via the holding sheet is a flat portion and is not subject to backside gas cooling. A first groove structure is formed in the area onto which the wafer is placed via the holding sheet as well as in an area onto which a holding sheet between the wafer and the frame. To a minute space defined by the first groove structure and the carrier, a heat transfer gas is supplied from a first heat transfer gas supply section through heat transfer gas supply hole (backside gas cooling). Both of plasma processing performance and cooling performance are improved. | 2015-05-07 |
20150126039 | ETCH SUPPRESSION WITH GERMANIUM - Methods of selectively etching silicon relative to silicon germanium are described. The methods include a remote plasma etch using plasma effluents formed from a fluorine-containing precursor and a hydrogen-containing precursor. Plasma effluents from the remote plasma are flowed into a substrate processing region where the plasma effluents react with the silicon. The plasmas effluents react with exposed surfaces and selectively remove silicon while very slowly removing other exposed materials. The methods are useful for removing Si | 2015-05-07 |
20150126040 | SILICON GERMANIUM PROCESSING - Methods of selectively etching silicon germanium relative to silicon are described. The methods include a remote plasma etch using plasma effluents formed from a fluorine-containing precursor. Plasma effluents from the remote plasma are flowed into a substrate processing region where the plasma effluents react with the silicon germanium. The plasmas effluents react with exposed surfaces and selectively remove silicon germanium while very slowly removing other exposed materials. Generally speaking, the methods are useful for removing Si | 2015-05-07 |
20150126041 | METHODS FOR ETCHING SILICON USING HYDROGEN RADICALS IN A HOT WIRE CHEMICAL VAPOR DEPOSITION CHAMBER - Methods for etching silicon using hydrogen radicals in a hot wire chemical vapor deposition process are provided herein. In some embodiments, a method of processing a substrate having a crystalline silicon layer atop the substrate and a patterned masking layer atop the crystalline silicon layer exposing portions of the crystalline silicon layer; the method may include (a) exposing the substrate to a plasma formed from an inert gas wherein ions from the plasma amorphize a first part of the exposed portions of the crystalline silicon layer; and (b) exposing the substrate to hydrogen radicals generated from a process gas comprising a hydrogen-containing gas in a hot wire chemical vapor deposition (HWCVD) process chamber to etch the amorphized first part of the exposed portion of the crystalline silicon layer. | 2015-05-07 |
20150126042 | SOFT LANDING NANOLAMINATES FOR ADVANCED PATTERNING - Methods for depositing nanolaminate protective layers over a core layer to enable deposition of high quality conformal films over the core layer for use in advanced multiple patterning schemes are provided. In certain embodiments, the methods involve depositing a thin silicon oxide or titanium oxide film using plasma-based atomic layer deposition techniques with a low high frequency radio frequency (HFRF) plasma power, followed by depositing a conformal titanium oxide film or spacer with a high HFRF plasma power. | 2015-05-07 |
20150126043 | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, SUBSTRATE PROCESSING APPARATUS, AND RECORDING MEDIUM - A method of manufacturing a semiconductor device includes forming a thin film containing a specific element, oxygen, carbon, and nitrogen by performing a cycle a predetermined number of times. The cycle includes supplying a specific element-containing gas, supplying a carbon-containing gas, supplying an oxidizing gas, and supplying a nitriding gas. The act of supplying the nitriding gas is performed before the act of supplying the specific element-containing gas, and the act of supplying the carbon-containing gas and the act of supplying the oxidizing gas are not performed until the act of supplying the specific element-containing gas is performed. | 2015-05-07 |
20150126044 | SUBSTRATE PROCESSING APPARATUS AND SUBSTRATE PROCESSING METHOD - A substrate processing apparatus includes a vacuum chamber including a top plate, a rotary table rotatably disposed in the vacuum chamber, a first process gas supply part that supplies a first process gas to be adsorbed on a surface of a substrate placed on the rotary table, a plasma processing gas supply part that is disposed apart from the first process gas supply part in a circumferential direction of the rotary table and supplies a second process gas to the surface of the substrate, a separation gas supply part that supplies a separation gas for separating the first process gas and the second process gas, a plasma generator that converts the second process gas into plasma, and an elevating mechanism that moves at least one of the plasma generator and the rotary table upward and downward. | 2015-05-07 |
20150126045 | LOW TEMPERATURE SILICON NITRIDE FILMS USING REMOTE PLASMA CVD TECHNOLOGY - Embodiments of the present invention generally provide methods for forming a silicon nitride layer on a substrate. In one embodiment, a method of forming a silicon nitride layer using remote plasma chemical vapor deposition (CVD) at a temperature that is less than 300 degrees Celsius is disclosed. The precursors for the remote plasma CVD process include tris(dimethylamino)silane (TRIS), dichlorosilane (DCS), trisilylamine (TSA), bis-t-butylaminosilane (BTBAS), hexachlorodisilane (HCDS) or hexamethylcyclotrisilazane (HMCTZ). | 2015-05-07 |
20150126046 | MULTI-CELL RESONATOR MICROWAVE SURFACE-WAVE PLASMA APPARATUS - A processing system is disclosed, having a multiple power transmission elements with an interior cavity that may be arranged around a plasma processing chamber. Each of the power transmission elements may propagates electromagnetic energy that may be used to generate plasma within the plasma process chamber. The power transmission elements may be designed to accommodate a range of power and frequency ranges that range from 500W to 3500W and 0.9 GHz to 9 GHz. In one embodiment, the power transmission elements may include a rectangular interior cavity that enables the generation of a standing wave with two or more modes. In another embodiment, the power transmission elements may have a cylindrical interior cavity that may be placed along the plasma processing chamber or have one end of the cylinder placed against the plasma processing chamber. | 2015-05-07 |
20150126047 | Connectors Providing Haptic Feedback - A first connector may include a housing defining a first connector face to be positioned in a first position or a second position proximate to a second connector face of a second connector. A first extremely high frequency (EHF) communication unit may be disposed in the housing for communicating with a second EHF communication unit of the second connector when the first connector face is positioned in first or second position relative to the second connector face. A first magnet may be disposed in the housing. The first magnet may align with and repel a second magnet disposed relative to the second connector face when the first connector face is positioned in the second position. The first magnet may be configured not to align with and not to repel the second magnet when first connector face is positioned in the first position relative to the second connector face. | 2015-05-07 |
20150126048 | DATA STORAGE CONNECTING DEVICE - A data storage connecting device includes a circuit board, a first connector, a second connector and a third connector. The circuit board has a first connecting end and a second connecting end. The first connector and a second connector are both disposed on the first connecting end and respectively at two sides of a long axis of the circuit board, a location of the second connector connecting with a data storage device being opposite to that of the first connector connecting with another data storage device. The third connector is disposed on the second connecting end for transmitting data from two data storage devices connected to the first connector and the second connector, respectively, via the circuit to a server device, or vice versa. | 2015-05-07 |
20150126049 | ELECTRICAL CIRCUIT FOR THE INTERCONNECTION OF AN ELECTRICAL COMPONENT, SUCH AS A POWER COMPONENT - An electrical circuit including at least one electrical component, such as a power component, and an electrical flex circuit, and at least one electrical conductor part connecting the electrical component to the flex circuit, the electrical conductor part including at least a first contact portion configured to receive in contact a contact element of the electrical power component and a second contact portion configured to receive in contact a conductive layer of the electrical flex circuit, the extent of the width of the second contact portion corresponding to the width of the flex circuit, and the extent of the length of same being adjusted to provide a contact surface that one of transmitting a density of electrical current of between 4.5 and 5.5 A/mm | 2015-05-07 |
20150126050 | ELECTRICAL CONNECTOR ASSEMBLY WITH LOW PROFILE - An electrical connector assembly mounted on a printed circuit board, includes a socket and a connector. The socket mounted on the printed circuit board, has an insulative housing with upper body and lower body formed with a receiving room. A number of contacts respectively received in the upper body and lower body with a same structure. The contacts have spring portions extending into the receiving room and soldering portions extending beyond the upper body and the lower body. The connector is mounted on the printed circuit board. A linking element mechanically and electrically connects the socket and the connector. | 2015-05-07 |
20150126051 | VERY LOW INDUCTANCE FLEXIBLE ELECTRICAL CONNECTOR INSERT - A connector insert comprising a plurality of layers of conductive elastomer, and a concomitant method of employing a connector insert, the method comprising the steps of fabricating a plurality of layers of conductive elastomer as an insert and placing the insert into a connector. | 2015-05-07 |
20150126052 | Three-Level Power Converter - A 3-level power converter device with power semiconductor components including a first direct voltage positive potential terminal, a first direct voltage negative potential terminal, and first and second neutral voltage potential terminals. The first and second neutral voltage potential terminals are electrically conductively connected. The first direct voltage positive potential terminal and the first neutral voltage potential terminal form a first terminal pair, and the second neutral voltage potential terminal and the first direct voltage negative potential terminal form a second terminal pair. The first and second terminal pairs are arranged one behind another in a second direction. The first direct voltage positive potential terminal and the first neutral voltage potential terminal are arranged one above another in a third direction, and the second neutral voltage potential terminal and the first direct voltage negative potential terminal are arranged one above another in the third direction. | 2015-05-07 |
20150126053 | RAIL-BASED FASTENING STRUCTURE FOR TERMINAL BLOCK - A rail-based fastening structure for terminal blocks includes a fastening clip, a positioning rail and a bus body. The fastening clip has a base plate and two side plates each extending upward from the base plate and having an engaging hook. The positioning rail includes a bottom plate and two tracks extending upward and then outward from two opposite sides of the bottom plate, so that the bottom plate and the tracks define a valley. The bottom plate has an opening. The bus body deposited in the valley has a slot and two shoulder portions. The shoulder portions are positioned at two sides of the slot and extend toward the slot. The fastening clip is inserted into the opening through the slot so that the engaging hooks engage with the shoulder portions, respectively. Thereby, the rail-based fastening structure allows quick and convenient mounting/dismounting operation, low manufacturing costs and firm installation. | 2015-05-07 |
20150126054 | FLOAT ADAPTER FOR ELECTRICAL CONNECTOR - A float adapter for an electrical connector that includes a conductive shell and an insulator received in the conductive shell. The insulator includes an engagement end, an interface end that is opposite the engagement end, and a reduced diameter middle portion therebetween. The insulator includes an inner bore that extends through the engagement end, the interface end, and the reduced diameter middle portion. The interface end has a lead-in tip portion that extends outside of the first end of the conductive shell. The lead-in tip portion has a tapered outer surface that terminates in an end face surface and a shoulder remote from the end face surface that defines an outer diameter that is larger than the inner diameter of the conductive shell. An inner contact is received in the inner bore of the insulator. The inner contact has socket openings at either end. | 2015-05-07 |
20150126055 | CONNECTOR AND CONNECTOR CONNECTION STRUCTURE - A connector includes a metal terminal part on which conductive wires exposed outside at an end of an electric cable are pressure-contacted; a housing for accommodating the end of the electric cable and the metal terminal part; and a tube-like metal cover for covering the housing and fixing the housing to an electric device M. The housing has an electric cable insertion hole through which the electric cable is insertable. The housing includes an engageable claw as position restriction means for restricting relative positions of the housing and the metal cover. The engageable claw is restricted, by the electric cable inserted into the electric cable insertion hole, from being displaced. | 2015-05-07 |
20150126056 | CONNECTOR AND CONNECTOR CONNECTION STRUCTURE - A connector includes a metal terminal part on which conductive wires exposed outside at an end of an electric cable are pressure-contacted; and a housing for accommodating a pressure-contact part A of the end of the electric cable and the metal terminal part. The housing | 2015-05-07 |
20150126057 | CONNECTOR - A connector ( | 2015-05-07 |
20150126058 | CONNECTOR ASSEMBLY CONTACT HAVING AN OUTWARDLY PROJECTING PRIMARY LANCE - A contact for a plug connector has: a housing; and a primary lance which projects obliquely outwardly over the housing counter to a plug-in direction and which is inwardly deflectable for restraining the contact plugged into a contact chamber of a plug connector. The primary lance has both a stiffened region and a resiliently deformable region which is curved and extends at least partially in the plug-in direction. The stiffened region has a crimp that extends in the longitudinal direction. A supporting region is additionally provided, against whose contact surface the primary lance rests in response to a tensile load on the contact. | 2015-05-07 |
20150126059 | WATERPROOF ASSEMBLY FOR A LIGHT STRING - A waterproof light string assembly that comprises two ends that join to complete a circuit. The first end comprises an electrical male conducting element encased within a protective nodule. A second end comprises a protruding sheath having a female conducting element disposed therein and a configuration that accepts a portion of the nodule when said male element enters the sheath. The assembly is designed such that electrical elements are protected from ambient matters such as water and provide improved connectivity. | 2015-05-07 |
20150126060 | SUPPORT DEVICE AND ELECTRICAL CONNECTOR ASSEMBLY USED THEREOF - An electrical connector assembly ( | 2015-05-07 |
20150126061 | FLOAT PLATE FOR BLIND MATABLE ELECTRICAL CABLE CONNECTORS - A float plate for a connector interface includes: at least one substantially planar body panel; at least one opening in the body panel, the opening having a perimeter; and a plurality of fingers extending from the perimeter of the opening within a plane defined by the body panel, each finger extending from the perimeter at an oblique angle to a diameter of the opening originating at a fixed end of the finger. | 2015-05-07 |
20150126062 | CONNECTION STRUCTURE OF OUTER CONDUCTOR TERMINAL TO ELECTRIC WIRE - An outer conductor terminal for connecting an electric wire to an outer conductor, the electric wire including an internal conductor, an insulating cover covering an outer periphery of the internal conductor, an outer conductor having a twisted wire to wrap an outer periphery of the insulating cover, and a protective cover covering an outer periphery of the outer conductor includes a terminal part that is formed at one end portion of a flat plate, a cylindrical part that is formed at the other end portion of the flat plate by bending the other end of the flat plate and covers a part of the outer periphery of the insulating cover adjacent to an exposed portion of the outer conductor exposed by stripping the protective cover or a part of an outer periphery of the protective cover adjacent to the exposed portion. | 2015-05-07 |
20150126063 | HYBRIDIZED COAXIAL CABLE CONNECTOR - A hybridized connector apparatus is provided for solder connection with a central conductor of an associated coaxial cable and for crimp connection with a conductive braid and foil of the coaxial cable, and includes a hollow, generally cylindrical contact pin member or tip portion operably received into an interior of a generally ring-shaped dielectric spacer disk. The dielectric is received into a connector body, which is received into a shell. An end of the contact pin member defines an interface portion having a substantially constant outer diameter D extending outwardly from the spacer disk beyond an extent of the body member in an insertion direction I. The interface portion defines a semicircular edge portion and may also include a linear edge portion disposed in a plane substantially oblique to the longitudinal axis, and a curvilinear edge portion. | 2015-05-07 |
20150126064 | CONNECTOR - A connector C is configured so that terminal fittings ( | 2015-05-07 |
20150126065 | ELECTRICAL CONNECTOR HAVING A ROTATABLE BUCKLE - An electrical connector assembly ( | 2015-05-07 |
20150126066 | HIGH SPEED HIGH DENSITY CONNECTOR ASSEMBLY - An electrical connector ( | 2015-05-07 |
20150126067 | Connector For Shielded Electric Cables And Corresponding Assembly Method - The invention relates to a connector for a shielded electric cable ( | 2015-05-07 |
20150126068 | ELECTRICAL CONNECTOR WITH SHIELDING PLATE - An electrical connector has a conductive shell, a terminal module and a shielding plate. The conductive shell has a mating portion and an accommodate room. The mating portion has a first mating face. The terminal module is secured in the accommodate room and has a first insulator and a plurality of first terminals. The first insulator has a first face and a second face. Each of the first terminals has a first contacting portion protruding out of the first face of the first insulator. The shielding plate is disposed in the accommodate room and contacts with the conductive shell. The shielding plate presses on the second face of the first insulator so as to make first contacting portions be exposed to the first mating face. The disposition of the shielding plate has the function of pressing on the terminal module and preventing the interference of signal transmission between the terminals. | 2015-05-07 |
20150126069 | FLIPPABLE ELECTRICAL CONNECTOR - A flappable plug connector and a complementary receptacle connector are provided wherein the plug connector defining a mating tongue, is made with a pair of insert molding housings which are associated with the contacts thereof, commonly sandwiching a paddle card therebetween with a pair of power contacts exposed on two opposite lateral sides to form a sub-assembly. The corresponding receptacle connector defines a receiving cavity to receive the mating tongue of the plug connector. The plug connector defines a V-Bus clip surrounding the mating tongue for power transfer and the receptacle connector includes a pair of deflectable power contacts by two sides of the receiving cavity. | 2015-05-07 |
20150126070 | APPARATUS FOR POWERING AN ELECTRONIC DEVICE IN A SECURE MANNER - According to one embodiment of the invention, a portable adapter for an electronic device charger is described. Such an adapter comprises a plug, a receptacle and a socket device wherein the adapter is configured to connect to one of a plurality of standardized connectors such as a Universal Serial Bus (USB). Herein, the socket device includes a plurality of contacts such that none of the plurality of contacts allow for the transfer of data and at least one of the first plurality of contacts is configured for a transfer of power allowing the electronic device to obtain an electrical charge while preventing the transfer of data between the electronic device and the electronic device charger. | 2015-05-07 |
20150126071 | CONNECTOR - [Problem(s)] | 2015-05-07 |
20150126072 | ELECTRICAL CARD CONNECTOR WITH IMPROVED METALLIC COVER - An electrical connector, for receiving an electrical card, includes an insulative housing, a plurality of conductive contacts retained in the insulative housing and a metallic shell covering the insulative housing. The metallic cover and the insulative housing define a receiving cavity. The shell has a top plate, the top plate is formed with a plurality of openings, a plurality of resisting pieces bent downwardly from front edges of the openings, and a plurality of gaps defined between each two adjacent resisting pieces. Each contact has a conductive portion extending into the receiving cavity, and the conductive portions and the gaps of the top plate are alternatively disposed. | 2015-05-07 |
20150126073 | COMMUNICATIONS JACKS HAVING FLEXIBLE PRINTED CIRCUIT BOARDS WITH LOW-COUPLING JACKWIRE CONTACTS MOUNTED THEREON - Communications jacks include at least first through third jackwire contacts and a flexible substrate that has a first finger and a second finger. The first jackwire contact and the third jackwire contact are each mounted on the first finger and the second jackwire contact is mounted on the second finger. | 2015-05-07 |
20150126074 | Electrical Connector with Low-Stress, Reduced-Electrical-Length Contacts - An electrical connector adapted to receive a mating plug utilizes low-profile jack terminal contacts that can flex in their PCB-anchored base portions, which are substantially parallel to the PCB. Any bend in the distal connecting portion or in the intermediate transition portion of each terminal contact is gradual and forms an obtuse angle, thus minimizing stress concentrations. The contacts preferably are arranged in two oppositely facing and interdigitating rows of four contacts each. In one embodiment, the terminal contacts are anchored to the PCB by a contact cradle that constrains the base portion of each terminal contact at two spaced anchoring locations, allowing the base portion to flex therebetween. In another embodiment, the base portions of the terminal contacts are embedded in at least one elastomeric member, which is fitted to the PCB. | 2015-05-07 |
20150126075 | POWER PLUG AND POWER RECEPTACLE - A power plug including an insulation main body is provided. A first pillar and a second pillar arranged at the insulation main body. Only a first channel for inserting a first plug terminal is defined on the first pillar and multiple second channels for inserting second plug terminals are defined on the second pillar. A power receptacle including an insulation base is provided. A first slot and a second slot respectively corresponding to the first pillar and the second pillar are defined at the insulation base. Only a first receptacle terminal is inserted in the first slot. Multiple second receptacle terminals arranged at interval and parallel with each other are inserted in the second slot. The first receptacle terminal and the second receptacle terminals are arranged in a row. The power plug and the power receptacle are thereby limited to correctly couple. | 2015-05-07 |
20150126076 | SOCKET TERMINAL - A socket terminal ( | 2015-05-07 |
20150126077 | Ball Plunger-Style Connector Assembly for Electrical Connections - A ball plunger-style lateral connector assembly for electrical connections. One embodiment has an electrically conductive connector body with an electrically conductive pin extending into the body's interior area. An electrically conductive connector plate adjacent to the body's closed end engages the pin. An insulator sleeve in the body's interior area is adjacent to the body's sidewall. An electrically conductive biasing member in the interior area engages the connector plate; the insulator sleeve is between the biasing member and the connector body. An electrically conductive ball track in the interior area is in engagement with the other end of the biasing member. An electrically conductive ball is disposed in the body's open end and is seated in the ball track. The ball rolls within ball track during use of the lateral connector. | 2015-05-07 |
20150126078 | CRIMP TERMINAL, CONNECTION STRUCTURAL BODY AND CONNECTOR - In a female crimp terminal including a pressure-bonding section for permitting pressure-bonding and connection to an aluminum core wire of an insulated wire, the pressure-bonding section is configured in a hollow sectional shape by a plate material, and a long length direction weld portion in a long length direction is welded, a forward part in the hollow sectional shape is caused to take an almost flat plate-shaped sealing shape and a width direction weld portion in a width direction is welded. | 2015-05-07 |
20150126079 | CRIMP TERMINAL, CONNECTION STRUCTURAL BODY, CONNECTOR AND PRESSURE-BONDING METHOD OF CRIMP TERMINAL - In a female crimp terminal having a pressure-bonding section which allows pressure-bonding and connection of a conductor tip in an insulated wire obtained by coating a conductor with an insulating cover and having the conductor tip in which the conductor is exposed by peeling off the insulating cover in a tip side, the pressure-bonding section is constructed by arranging a conductor pressure-bonding section and a cover pressure-bonding section from a tip side to a base end side in a long length direction in this order, the conductor pressure-bonding section pressure-bonding the conductor tip, and the cover pressure-bonding section pressure-bonding a conductor tip portion in the tip side of the insulating cover, the cover pressure-bonding section is formed into a hollow shape which can surround the conductor tip portion, and the conductor pressure-bonding section is formed to have a smaller diameter than the cover pressure-bonding section, and is formed into a hollow shape which can surround the conductor tip. | 2015-05-07 |
20150126080 | CONNECTION STRUCTURE - In a connection structure, electric wire includes an inclined sheath section between an exposed core wire section and a whole circumferential sheath section. In the inclined sheath section, an end surface of the insulating sheath on one end side in a longitudinal direction inclines in a direction intersecting the longitudinal direction and thereby a portion of the core wire is exposed. Each of crimping pieces of a terminal has a core wire crimping section that crimps the exposed core wire section, a whole circumferential sheath crimping section that crimps the whole circumferential sheath section, and an inclined sheath crimping section that crimps the inclined sheath section. The terminal is crimped to the electric wire so that the end surface of the inclined sheath section faces a base plate section of the terminal. | 2015-05-07 |
20150126081 | ELECTRIC CONTACT AND SOCKET FOR ELECTRIC PARTS - An electric contact for preventing a terminal of an electric part and the electric contact from sticking to each other after a continuity test to improve the durability of the electric contact; and a socket for electric parts using the electric contact. The electric contact of this invention includes a first layer made from a material into which Sn melts and diffuses upon application of heat; and a second layer formed on the outer side of the first layer and made from a material lower in the rate at which Sn melts and diffuses upon application of heat than the first layer. | 2015-05-07 |
20150126082 | CONNECTOR COVER AND CONNECTOR CONNECTING APPARATUS - A connector cover holds altogether a plurality of insertion connectors, the insertion connectors being provided at corresponding ends of cables and inserted into reception connectors. The connector cover includes a cover part in which a plurality of holding openings that hold the insertion connectors with ends thereof being exposed are formed so that the insertion connectors can be inserted into the reception connectors. The cover part can be divided along a dividing surface including the holding openings. The cover part is formed with a lock-lever pressing part that presses a lock lever of corresponding one of the insertion connectors held by the holding openings to fix the insertion connectors in an unlocked state for each of the holding openings. | 2015-05-07 |
20150126083 | AMPHIBIOUS VEHICLE AND METHOD FOR OPERATING AN AMPHIBIOUS VEHICLE - An amphibious vehicle, in particular military, amphibious vehicle, includes a first end region ( | 2015-05-07 |
20150126084 | SELF-INFLATING DEVICE - A pressure-activated flotation device for use with an electronic device includes an attachment feature, chemicals, a container, a removable cap, an inflatable tube, and a pressure-activated valve. The inflatable tube is fluidly connected to the container and is configured to inflate with the expanding gas when the chemicals are exposed to a liquid. The pressure-activated valve leads from the outer surface of the container to the inner volume of the container and includes a one-way valve that opens to allow liquid to flow to the inner volume of the container when the pressure-activated flotation device is submerged in the liquid to a depth where the pressure applied against the pressure-activated valve by the liquid is greater than an actuation pressure. The one-way valve also closes when the expanding gas generates a gas pressure inside the inflatable tube that exceeds a threshold. | 2015-05-07 |
20150126085 | RAFT ASSEMBLY COMPONENTS AND METHODS - Embodiments generally to raft assembly components and methods. Specific aspects provide a tape configuration that can assist positioning of raft tubes with respect to one another, as well as positioning a life raft floor with respect to one or more of the raft tubes. The tape configuration may have a base and an extending T-shaped flange. | 2015-05-07 |
20150126086 | BUOYANCY VEST - A buoyancy control apparatus for body surfing includes a buoyancy vest to be worn alone or under a body surfing suit or wetsuit, the vest having a plurality of spaced pockets with access openings on the exterior surface of the vest, and a plurality of foam inserts sized for fitting into the pockets via the access openings. The body surfer can regulate their buoyancy by adding foam inserts to the pockets or removing foam inserts from the pockets to enable them to maintain desired control and buoyancy balance in the water. | 2015-05-07 |
20150126087 | BIODEGRADABLE LINERLESS ADHESIVE TAPES AND LABELS - A linerless label or tape comprises a substantially biodegradable, natural or synthetic, woven or non-woven substrate impregnated with a formulation including at least 90 weight percent of a polyester amide segmented block copolymer. This label or tape may be conveniently prepared above the melt temperature of the copolymer and is printable. It offers the advantage of being able to be prepared such that it is substantially non-tacky at room or storage temperatures, and yet may be easily affixed to a substrate when heated to a temperature above the melt temperature of the impregnant, preferably ranging from 60° C. to 150° C. “Linerless” is defined as not requiring a separable, wastable layer, and a release coating to facilitate rolling or stacking is also not required. | 2015-05-07 |
20150126088 | ROOFING UNDERLAYMENT - A roofing underlayment comprising a carrier substrate included a felt mixture and a binder mixture, and a volume of asphalt flux saturating the carrier substrate. The felt mixture may comprise between about seventy-five percent and about ninety-five percent by weight corrugated paper/cardboard fibers and between about five percent and about twenty-five percent by weight fiberglass fibers. The volume of asphalt flux may comprise between about twenty-five and fifty percent of a total weight of the roofing shingle underlayment and may saturate the carrier substrate at a saturation percentage between about thirty and about one hundred percent. The binder mixture may include a mixture of alum and rosin having a mixture ratio by weight of alum to rosin in a range between one to one (1:1) and four to one (4:1). | 2015-05-07 |
20150126089 | FABRIC FOR USE IN COMPOSITE MATERIALS AND METHOD FOR PRODUCING SAID FABRIC AND A COMPOSITE MATERIAL BODY | 2015-05-07 |
20150126090 | ENHANCED PERFORMANCE MATERIALS FOR TEXTILES AND METHODS OF MAKING THE SAME - The invention discloses high performance layered textile materials including at least one nonwoven layer sandwiched in between at least one first yarn based substrate layer and at least one second yarn based substrate layer. The non-woven layer has a first face and a second face, the first face being attached to and mechanically entangled with the first yarn based substrate layer and the second face being attached to and mechanically entangled with the second yarn based substrate layer. The formed integral material does not require assembly of individual layers prior to forming a finished product. | 2015-05-07 |
20150126091 | PROCESS FOR MAKING NON-WOVEN FABRICS USING POLYLACTIDE RESIN BLENDS - Non-woven fabrics are made in a spun-melt process, in which a PLA resin blend is melt-spun into filaments, which are pneumatically drawn and then deposited onto a surface to produce the fabric. The PLA resin includes 1-25% of certain aliphatic or aliphatic-aromatic polyesters that have a number average molecular weight from 4,000 to 70,000 g/mol. | 2015-05-07 |
20150126092 | METHOD OF ATTACHING POLARIZING PLATE - An method of attaching a polarizing plate to a liquid crystal display panel includes inspecting an alignment axis of the liquid crystal display panel using an optical axis inspector; controlling a position of the liquid crystal display panel with respect to a reference alignment axis, according to a result of the inspecting the alignment axis of the liquid crystal display panel; providing the polarizing plate to the liquid crystal display panel at the controlled position thereof; and attaching the polarizing plate to the liquid crystal panel at the controlled position thereof. | 2015-05-07 |
20150126093 | LIQUID CRYSTAL DISPLAY DEVICE, METHOD OF MANUFACTURING THE SAME AND ALIGNMENT LAYER COMPOSITION FOR THE LIQUID CRYSTAL DISPLAY DEVICE - A liquid crystal display device that includes an array substrate, an opposite substrate and a liquid crystal display layer is described. The array substrate includes a pixel electrode and a lower alignment layer. The pixel electrode has a plurality of slit portions extending in different directions. The lower alignment layer includes a reactive mesogen (RM) diamine is formed on the pixel electrode to induce an alignment direction of the liquid crystal molecules. An upper alignment layer is formed on a common electrode of the opposite substrate. The RM is cured at surfaces of the lower and upper alignment layers in response to ultraviolet (UV) light, so that liquid crystal molecules have a pretilt angle. Therefore, the aperture ratio and the response time may be improved, and afterimages may be decreased, so that display quality may be improved. | 2015-05-07 |
20150126094 | CENTRIPETAL WAND SCANNER - The present invention provides the advantage of allowing a user to actively participate in the creation of a sound and light show by utilizing a radial element placed around a central shaft, which defines the axis of rotation for said radial element, and having such radial element connected to light and sound systems. The present embodiment of the invention, which is a handheld spinning toy, relies on the user setting the toy in motion (e.g., rotating the handle in a circular fashion, which causes the radial element to spin around the central shaft) in order to activate the lighting and sound systems contained within the present invention. | 2015-05-07 |
20150126095 | CHEMICAL MECHANICAL POLISHING APPARATUS AND POLISHING METHOD USING THE SAME - A chemical mechanical polishing apparatus includes a platen, a polishing head, a magnetizable polishing pad, and an electromagnetic component. The magnetizable polishing pad is disposed between the polishing head and the platen. The electromagnetic component is configured for fastening the magnetizable polishing pad on the platen. | 2015-05-07 |
20150126096 | SYSTEM AND METHOD FOR CONTOURED PEEL GRINDING - A method for grinding out a contoured workpiece including providing a grinding wheel having a first abrasive work surface location and a second abrasive work surface location, the first abrasive work surface location having a first tangential radius and the second abrasive work surface location having a second tangential radius, the first and second tangential radii being different, grinding the workpiece at a first time with the first abrasive work surface location without the second abrasive work surface location performing grinding, and grinding the workpiece at a second time with the second abrasive work surface location without the first abrasive work surface location performing grinding. | 2015-05-07 |
20150126097 | NANO FLUID ELECTROSTATIC ATOMIZATION CONTROLLABLE JET MINIMAL QUANTITY LUBRICATION GRINDING SYSTEM - The present invention relates to a nano fluid electrostatic atomizing controllable jet minimal lubricating for grinding system. A grinding system is provided with a corona charging nozzle, a nozzle body of the corona charging nozzle is connected with a liquid supply system and an air supply system, a high-voltage direct-current electrostatic generator at the lower part of the nozzle body is connected with the cathode of an adjustable high-voltage direct-current power supply, the anode of the adjustable high-voltage direct-current power supply is connected with a workpiece charging device, and the workpiece charging device is attached to the non-machined surface of the workpiece. Nano fluid which used as grinding liquid is fed into the corona charging nozzle through the liquid supply system, meanwhile, the air supply system feeds compressed air into the corona charging nozzle. | 2015-05-07 |
20150126098 | COATED ABRASIVE ARTICLE - Provided are abrasive articles in which the make layer, abrasive particle layer, and size layer are coated onto a backing according to a coating pattern characterized by a pattern of discrete islands, or features, having an areal density ranging from about 30 features to about 300 features per square centimeter and an average feature diameter ranging from about 0.1 millimeters to about 1.5 millimeters. Optionally, the provided abrasive particles have an average abrasive particle size ranging from about 20 micrometers to about 250 micrometers and the average make layer thickness ranging from 33 percent to 100 percent of the average abrasive particle size. This coating pattern provides that all three components are generally in registration with each other, while also providing a pervasive uncoated area extending across the backing, thereby providing improved cut and finish performance while displaying a resistance to curl in wet environments. | 2015-05-07 |
20150126099 | PRINTED CHEMICAL MECHANICAL POLISHING PAD HAVING ABRASIVES THEREIN - A method of fabricating a polishing layer of a polishing pad includes determining a desired distribution of particles to be embedded within a polymer matrix of the polishing layer. A plurality of layers of the polymer matrix is successively deposited with a 3D printer, each layer of the plurality of layers of polymer matrix being deposited by ejecting a polymer matrix precursor from a nozzle. A plurality of layers of the particles is successively deposited according to the desired distribution with the 3D printer. The polymer matrix precursor is solidified into a polymer matrix having the particles embedded in the desired distribution. | 2015-05-07 |
20150126100 | Polishing Pad with Secondary Window Seal - A polishing article has a polishing surface and an aperture, the aperture including a first section and a second section. The polishing article includes a projection extending inwardly into the aperture. The polishing article includes a lower portion on a side of the first surface farther from the polishing surface. A window has a first portion positioned in the first section of the aperture and a second portion extending into the second section of the aperture. The window has a second surface substantially parallel to the polishing surface. A first adhesive adheres the first surface of the projection to the second surface of the window to secure the window to the projection and a second adhesive of different material composition than the first adhesive. The second adhesive is positioned laterally between the second portion of the window and the lower portion of the polishing article. | 2015-05-07 |
20150126101 | DEVICE FOR TREATING A STRING OF SAUSAGES - Device for treating a string of sausages composed of a plurality of sausages which are disposed so as to be behind one another, having a sausage casing from an organic material which in the region between two sausages displays in each case a twist, wherein at least one microwave applicator which has at least one application chamber and is assigned at least one microwave generation unit for generating the microwave radiation to be supplied to the application chamber, and which has at least one conveying unit for conveying the string of sausages through the at least one application chamber is provided, wherein at least one measuring unit ( | 2015-05-07 |