19th week of 2011 patent applcation highlights part 14 |
Patent application number | Title | Published |
20110108791 | PHASE CHANGE MATERIAL, A PHASE CHANGE RANDOM ACCESS MEMORY DEVICE INCLUDING THE PHASE CHANGE MATERIAL, AND A SEMICONDUCTOR STRUCTURE INCLUDING THE PHASE CHANGE MATERIAL - Methods of forming a phase change material are disclosed. The method includes forming a chalcogenide compound on a substrate and simultaneously applying a bias voltage to the substrate to alter the stoichiometry of the chalcogenide compound. In another embodiment, the method includes positioning a substrate and a deposition target having a first stoichiometry in a deposition chamber. A plasma is generated in the deposition chamber to form a phase change material on the substrate. The phase change material has a stoichiometry similar to the first stoichiometry. A bias voltage is applied to the substrate to convert the stoichiometry of the phase change material to a second stoichiometry. A phase change material, a phase change random access memory device, and a semiconductor structure are also disclosed. | 2011-05-12 |
20110108792 | Single Crystal Phase Change Material - A method for fabricating a phase change memory (PCM) cell includes forming a dielectric layer over an electrode, the electrode comprising an electrode material; forming a via hole in the dielectric layer such that the via hole extends down to the electrode; and growing a single crystal of a phase change material on the electrode in the via hole. A phase change memory (PCM) cell includes an electrode comprising an electrode material; a dielectric layer over the electrode; a via hole in the dielectric layer; and a single crystal of a phase change material located in the via hole, the single crystal contacting the electrode at the bottom of the via hole. | 2011-05-12 |
20110108793 | JUNCTIONS COMPRISING MOLECULAR BILAYERS FOR THE USE IN ELECTRONIC DEVICES - The present invention relates to asymmetric molecular bilayers for the use in the junctions of electronic devices, such as crossbar junctions, comprising the general structure E | 2011-05-12 |
20110108794 | Phase Changeable Memory Devices - Phase changeable memory devices are provided. A phase changeable memory device may include two first electrodes spaced apart from each other. The phase changeable memory device may also include a common phase changeable material contacting a sidewall of each of the two first electrodes. The phase changeable memory device may further include a second electrode overlying the common phase changeable material. A top surface of each of the two first electrodes may not physically contact the phase changeable material. | 2011-05-12 |
20110108795 | Molecular devices and methods of manufacturing the same - Molecular devices and methods of manufacturing the molecular device are provided. The molecular device may include a lower electrode on a substrate and a self-assembled monolayer on the lower electrode. After an upper electrode is formed on the self-assembled monolayer, the self-assembled monolayer may be removed to form a gap between the lower electrode and the upper electrode. A functional molecule having a functional group may be injected into the gap. | 2011-05-12 |
20110108796 | Laser spike annealing for GaN LEDs - Methods of performing laser spike annealing (LSA) in forming gallium nitride (GaN) light-emitting diodes (LEDs) as well as GaN LEDs formed using LSA are disclosed. An exemplary method includes forming atop a substrate a GaN multilayer structure having a n-GaN layer and a p-GaN layer that sandwich an active layer. The method also includes performing LSA by scanning a laser beam over the p-GaN layer. The method further includes forming a transparent conducting layer atop the GaN multilayer structure, and adding a p-contact to the transparent conducting layer and a n-contact to the n-GaN layer. The resultant GaN LEDs have enhanced output power, lower turn-on voltage and reduced series resistance. | 2011-05-12 |
20110108797 | SINGLE CHIP TYPE WHITE LED DEVICE - A single chip type white light LED device includes a first semiconductor layer of a first doping type, a ZnMnSeTe (Zinc Manganese Selenium Tellurium) red light quantum well, a first barrier layer disposed on the ZnMnSeTe red light quantum well, a green light emitting layer including green light quantum dots disposed on the first barrier layer, a second barrier layer disposed on the green light emitting layer, a blue light emitting layer including blue light quantum dots disposed on the second barrier layer, a third barrier layer disposed on the blue light emitting layer, and a second semiconductor layer disposed on the third barrier layer. | 2011-05-12 |
20110108798 | LIGHT-EMITTING ELEMENT AND A PRODUCTION METHOD THEREFOR - Disclosed is a light emitting device. The light emitting device includes a support substrate; a planar layer over the support substrate; a wafer bonding layer over the planar layer; a current spreading layer over the wafer bonding layer; a second conductive semiconductor layer over the current spreading layer; an active layer over the second conductive semiconductor layer; a first conductive semiconductor layer over the active layer; a first electrode layer over the first conductive semiconductor layer; and a second electrode layer over the current spreading layer. | 2011-05-12 |
20110108799 | NANOPARTICLES - Method for producing a nanoparticle comprised of core, first shell and second shell semiconductor materials. Effecting conversion of a core precursor composition comprising separate first and second precursor species to the core material and then depositing said first and second shells. The conversion is effected in the presence of a molecular cluster compound under conditions permitting seeding and growth of the nanoparticle core. Core/multishell nanoparticles in which at least two of the core, first shell and second shell materials incorporate ions from groups 12 and 15, 14 and 16, or 11, 13 and 16 of the periodic table. Core/multishell nanoparticles in which the second shell material incorporates at least two different group 12 ions and group 16 ions. Core/multishell nanoparticles in which at least one of the core, first and second semiconductor materials incorporates group 11, 13 and 16 ions and the other semiconductor material does not incorporate group 11, 13 and 16 ions. | 2011-05-12 |
20110108800 | SILICON BASED SOLID STATE LIGHTING - A semiconductor device includes a substrate comprising a first surface having a first orientation and a second surface having a second orientation and a plurality of III-V nitride layers on the substrate, wherein the plurality of III-V nitride layers are configured to emit light when an electric current is produced in one or more of the plurality of III-V nitride layers. | 2011-05-12 |
20110108801 | SINGLE-CRYSTAL SEMICONDUCTOR LAYER WITH HETEROATOMIC MACRO-NETWORK - A single-crystal layer of a first semiconductor material including single-crystal nanostructures of a second semiconductor material, the nanostructures being distributed in a regular crystallographic network with a centered tetragonal prism. | 2011-05-12 |
20110108802 | Metal-Free Integrated Circuits Comprising Graphene and Carbon Nanotubes - An integrated circuit includes a graphene layer, the graphene layer comprising a region of undoped graphene, the undoped graphene comprising a channel of a transistor, and a region of doped graphene, the doped graphene comprising a contact of the transistor; and a gate of the transistor, the gate comprising a carbon nanotube film. A method of fabricating an integrated circuit comprising graphene and carbon nanotubes, includes forming a graphene layer; doping a portion of the graphene layer, resulting in doped graphene and undoped graphene; forming a carbon nanotube film; and etching the carbon nanotube film to form a gate of a transistor, wherein the transistor further comprises a channel comprising the undoped graphene and a contact comprising the doped graphene. A transistor includes a gate, the gate comprising a carbon nanotube film; a channel, the channel comprising undoped graphene; and a contact, the contact comprising doped graphene. | 2011-05-12 |
20110108803 | VERTICAL NANOWIRE FET DEVICES - A Vertical Field Effect Transistor (VFET) formed on a substrate, with a conductive bottom electrode formed thereon. A bottom dielectric spacer layer and a gate dielectric layer surrounded by a gate electrode are formed thereabove. Thereabove is an upper spacer layer. A pore extends therethrough between the electrodes. A columnar Vertical Semiconductor Nanowire (VSN) fills the pore and between the top and bottom electrodes. An FET channel is formed in a central region of the VSN between doped source and drain regions at opposite ends of the VSN. The gate dielectric structure, that is formed on an exterior surface of the VSN above the bottom dielectric spacer layer, separates the VSN from the gate electrode. | 2011-05-12 |
20110108804 | Maskless Process for Suspending and Thinning Nanowires - Semiconductor-based electronic devices and techniques for fabrication thereof are provided. In one aspect, a device is provided comprising a first pad; a second pad and a plurality of nanowires connecting the first pad and the second pad in a ladder-like configuration formed in a silicon-on-insulator (SOI) layer over a buried oxide (BOX) layer, the nanowires having one or more dimensions defined by a re-distribution of silicon from the nanowires to the pads. The device can comprise a field-effect transistor (FET) having a gate surrounding the nanowires wherein portions of the nanowires surrounded by the gate form channels of the FET, the first pad and portions of the nanowires extending out from the gate adjacent to the first pad form a source region of the FET and the second pad and portions of the nanowires extending out from the gate adjacent to the second pad form a drain region of the FET. | 2011-05-12 |
20110108805 | ELECTRONIC DEVICE, LIGHT-RECEIVING AND LIGHT-EMITTING DEVICE, ELECTRONIC INTEGRATED CIRCUIT AND OPTICAL INTEGRATED CIRCUIT USING THE DEVICES - Provided are an electronic device and a light-receiving and light-emitting device which can control the electron configuration of a graphene sheet and the band gap thereof, and an electronic integrated circuit and an optical integrated circuit which use the devices. By shaping the graphene sheet into a curve, the electron configuration thereof is controlled. The graphene sheet can be shaped into a curve by forming the sheet on a base film having a convex structure or a concave structure. The local electron states in the curved part can be formed by bending the graphene sheet. Thus, the same electron states as the cylinder or cap part of a nanotube can be realized, and the band gaps at the K points in the reciprocal lattice space can be formed. | 2011-05-12 |
20110108806 | Method to Modify the Conductivity of Graphene - A gated electrical device includes a non-conductive substrate and a graphene structure disposed on the non-conductive substrate. A metal gate is disposed directly on a portion of the graphene structure. The metal gate includes a first metal that has a high contact resistance with graphene. Two electrical contacts are each placed on the graphene structure so that the metal gate is disposed between the two electrical contacts. In a method of making a gated electrical device, a graphene structure is placed onto a non-conductive substrate. A metal gate is deposited directly on a portion of the graphene structure. Two electrical contacts are deposited on the graphene structure so that the metal gate is disposed between the two electrical contacts. | 2011-05-12 |
20110108807 | POLYMER FOR OPTOELECTRONIC DEVICE - A polymer useful in an optoelectronic device comprises structural unit of formula I: | 2011-05-12 |
20110108808 | Organic Light Emitting Diode Display - An organic light emitting diode display that includes a first substrate including an organic light emitting diode, a second substrate having a receiving unit formed by recession of one surface facing the first substrate and bonded with the first substrate to cover the organic light emitting diode, a first optical member attached to the other surface opposite to the one surface facing the first substrate between both surfaces of the second substrate, and a second optical member received in the receiving unit of the second substrate. | 2011-05-12 |
20110108809 | ORGANIC LIGHT EMITTING DIODE DISPLAY DEVICE AND METHOD FOR MANUFACTURING THE SAME - An organic light emitting diode display device includes a substrate body that is divided into a display area and a neighboring area; an organic light emitting diode formed in the display area of the substrate body; a barrier film that is attached to the substrate body and covers the organic light emitting diode; and an adhesive agent disposed between the neighboring area of the substrate body and the barrier film. In addition, a groove pattern is recessed on one surface of the barrier film that is in contact with the adhesive agent. | 2011-05-12 |
20110108810 | ORGANIC ELECTROLUMINESCENCE DEVICE - Provided is an organic electroluminescence device having high efficiency and a long lifetime. The organic electroluminescence device includes an anode; a cathode; and an organic compound layer interposed between the anode and the cathode, and including an emission layer formed of a first emission layer provided on an anode side and a second emission layer provided on a cathode side, in which the first emission layer contains a first host and a first dopant, the second emission layer contains a second host and a second dopant, the following relationship (a) is established between the first host and the first dopant, the following relationship (b) is established between the second host and the second dopant, and the following relationship (c) is established between the first host and the second host: | 2011-05-12 |
20110108811 | ORGANIC LIGHT EMITTING DIODE DISPLAY AND METHOD OF MANUFACTURING THE SAME - An organic light emitting diode display and a method of manufacturing the same are disclosed. The organic light emitting diode display includes a first substrate, an organic light emitting diode that is positioned on the first substrate and includes a first electrode, an organic layer having at least a light emitting layer, and a second electrode, an organic buffer layer that is positioned on an entire surface of the organic light emitting diode and has a hydroxy group or an amide group, a sealant positioned on an entire surface of the organic buffer layer, and a second substrate positioned on the sealant. | 2011-05-12 |
20110108812 | ORGANIC EL DEVICE - According to one embodiment, an organic EL device includes an insulating substrate, switching elements arranged two-dimensionally above the insulating substrate, an insulating layer positioned above the switching elements and provided with contact holes communicating with the switching elements, respectively, pixel electrodes arranged correspondingly with the switching elements, cover members arranged correspondingly with the contact holes, an organic layer extending over the pixel electrodes, the cover members and a portion of the insulating layer positioned below a region between the pixel electrodes, and a counter electrode positioned above the organic layer. Each pixel electrode includes an electrode body positioned above the insulating layer and a contact section extending in the contact hole and electrically connects the electrode body to the switching element. Each cover member covers the contact section and is made of an insulating material. | 2011-05-12 |
20110108813 | ORGANIC SEMICONDUCTOR COMPOSITION, ORGANIC THIN FILM AND ORGANIC THIN FILM ELEMENT PROVIDED WITH ORGANIC THIN FILM - An object of the present invention is to provide an organic semiconductor composition capable of forming an organic film having high carrier transportability. A preferable organic semiconductor composition contains a lower molecular weight compound and a higher molecular weight compound having carrier transportability, and the solubility parameter of the higher molecular weight compound and the solubility parameter of the lower molecular weight compound differ by 0.6 to 1.5. | 2011-05-12 |
20110108814 | POLYMER COMPOUND, NET-LIKE POLYMER COMPOUND PRODUCED BY CROSSLINKING THE POLYMER COMPOUND, COMPOSITION FOR ORGANIC ELECTROLUMINESCENCE ELEMENT, ORGANIC ELECTROLUMINESCENCE ELEMENT, ORGANIC EL DISPLAY, AND ORGANIC EL LIGHTING - An object of the invention is to provide a polymer compound having a high hole transport capacity, excellent in electrochemical stability, and suitable to film formation according to a wet film formation method. Another object of the invention is to provide an organic electroluminescence element having a high current efficiency, a low drive voltage, and a long derive lifetime. The polymer compound has a crosslinking group bonding to the arylamine moiety in the repeating unit via at least one single bond therebetween. | 2011-05-12 |
20110108815 | MULTI-RATE RESIST METHOD TO FORM ORGANIC TFT CONTACT AND CONTACTS FORMED BY SAME - A method for forming a thin film electrode for an organic thin film transistor of the invention provides a multi-layer mask on a substrate with an electrode area opening in a top layer of the mask that is undercut by openings in other layers of the mask. A thin film of metal is deposited in the electrode area on the substrate. Removing the multi-layer mask leaves a well-formed thin film electrode with naturally tapered edges. A preferred embodiment of the invention is a method for forming a thin film electrode for an organic thin film transistor. The method includes depositing a first layer of photoresist on a substrate. The photoresist of the first layer has a first etching rate. A second layer of photoresist is deposited on the first layer of photoresist. The photoresist of the second layer has a second etching rate that is lower than the first etching rate. The first and second layer of photoresist are patterned by exposure. Developing the first and second layers of photoresist provides an electrode area on the substrate. An electrode is deposited in the electrode area. Lift-off of the first and second layers is performed. The electrode that is deposited has a tailored, tapered edge. A preferred embodiment thin film electrode in an organic thin film transistor has a tapered edge with a contact angle of approximately +40±4.4°. | 2011-05-12 |
20110108816 | ELECTRONIC HYBRID DEVICE - Method of manufacture of an electronic device, comprising providing a substrate comprising a semiconductor device stack, depositing a first material layer over the substrate, the first material layer being an insulating layer, depositing an active organic material layer over the first material layer, depositing a second material layer over the active organic material layer, the second material layer being an insulating layer. | 2011-05-12 |
20110108817 | Light Emitting Device - By doping an organic compound functioning as an electron donor (hereinafter referred to as donor molecules) into an organic compound layer contacting a cathode, donor levels can be formed between respective LUMO (lowest unoccupied molecular orbital) levels between the cathode and the organic compound layer, and therefore electrons can be injected from the cathode, and transmission of the injected electrons can be performed with good efficiency. Further, there are no problems such as excessive energy loss, deterioration of the organic compound layer itself, and the like accompanying electron movement, and therefore an increase in the electron injecting characteristics and a decrease in the driver voltage can both be achieved without depending on the work function of the cathode material. | 2011-05-12 |
20110108818 | ORGANIC ELECTROLUMINESCENCE DEVICE - The present invention relates to organic electroluminescent devices which comprise ketone or phosphine oxide derivatives as matrix material and at least two phosphorescent compounds. | 2011-05-12 |
20110108819 | COMPOUNDS HAVING ELECTRON TRANSPORT PROPERTIES, THEIR PREPARATION AND USE - The invention provides new compounds of the formula I, II or III. These compounds can be used as electron transport materials in optical light emitting diodes (OLEDs). The compounds of the formula I, II and III are as follows: | 2011-05-12 |
20110108820 | PHENOXAZINE POLYMER COMPOUND AND LIGHT EMITTING DEVICE USING THE SAME - A polymer compound comprising a residue of a compound represented by the following formula (0): | 2011-05-12 |
20110108821 | ORGANIC ELECTROLUMINESCENT DEVICE - The present invention relates to white emitting organic electroluminescent devices having at least one blue fluorescent emitter layer. | 2011-05-12 |
20110108822 | MATERIALS FOR ORGANIC ELECTROLUMINESCENT DEVICES - The present invention relates to transition-metal complexes of the general formula I or II, in particular as emitter molecules in organic electronic devices, to a layer and to an electronic device which comprise the compounds according to the invention, and to a process for the preparation of the compounds according to the invention. | 2011-05-12 |
20110108823 | MATERIALS FOR ORGANIC ELECTROLUMINESCENCE DEVICES - The present invention relates to aromatic amines and to electronic devices in which these amines are used, in particular, as matrix material in the emitting layer and/or as hole-transport material and/or as electron-blocking or exciton-blocking material and/or as electron-transport material. | 2011-05-12 |
20110108824 | ELECTROLUMINESCENT POLYMERS, METHOD FOR THE PRODUCTION THEREOF, AND USE THEREOF - The present invention relates to electroluminescent polymers which comprise 2-vinylthiophenylbenzene derivatives as recurring units, to a process for the preparation thereof, to blends and formulations comprising these polymers, and to the use of these polymers in electronic devices, in particular in organic light-emitting diodes, so-called OLEDs. | 2011-05-12 |
20110108825 | ORGANIC ELECTROLUMINESCENT DEVICE AND ITS PRODUCTION METHOD - An organic electroluminescent device comprising a cathode, an anode formed by an application method, and a light emitting layer disposed between the above-described anode and the above-described cathode. | 2011-05-12 |
20110108826 | ANTHRACENE DERIVATIVE AND AN ORGANIC ELECTRONIC DEVICE USING THE SAME - The present invention relates to a novel anthracene derivative and an organic electronic device using the same. The anthracene derivative can act as a hole injecting, hole transporting, electron injecting and transporting, or light emitting material in an organic light emitting device and an organic electronic device. In particular, the anthracene derivative can act as a light emitting host. The organic electronic device according to the present invention has excellent characteristics in views of efficiency, the driving voltage, and the stability. | 2011-05-12 |
20110108827 | ORGANOMETALLIC COMPLEX FOR ORGANIC LIGHT-EMITTING LAYER AND ORGANIC LIGHT-EMITTING DIODE USING THE SAME - An organometallic complex represented by Formula 1 is provided. An organic light-emitting diode using the organometallic complex exhibits improved current and power efficiency and long lifetime. | 2011-05-12 |
20110108828 | LIGHT EMITTING ELEMENT, LIGHT EMITTING DEVICE, AND ELECTRONIC DEVICE - It is an object of the present invention to provide a functional layer for protecting a light emitting element from being deteriorated by a physical or chemical influence when the light emitting element is manufactured or driven, and to attain extension of lifetime of an element and improvement of element characteristics without increasing a drive voltage and degrading transmittance and color purity by providing such a functional layer. One feature of the present invention is to provide a buffer layer made of a composite material for a light emitting element including aromatic hydrocarbon containing at least one vinyl skeleton and metal oxide in part of a light emitting substance containing layer, in the light emitting element fowled by interposing the light emitting substance containing layer between a pair of electrodes. The composite material for a light emitting element for forming the buffer layer of the present invention has high conductivity and is superior in transparency. | 2011-05-12 |
20110108829 | SWITCHING DEVICE AND METHOD OF MANUFACTURING THE SAME - A switching device includes a first electrode ( | 2011-05-12 |
20110108830 | THIN FILM TRANSISTOR AND ORGANIC LIGHT EMITTING DISPLAY DEVICE USING THE SAME - There is provided a thin film transistor exhibiting stable reliability and electrical characteristics by forming an active layer by adding material having a large difference of electronegativity from oxygen like Hf and an atomic radius similar to that of Zn or SN to an oxide semiconductor made of ZnSnO to adjust concentration of carrier and to enhance reliability of the oxide semiconductor, and an organic light emitting display device having the same. | 2011-05-12 |
20110108831 | ORGANIC LIGHT EMITTING DISPLAY DEVICE AND METHOD OF MANUFACTURING THE SAME - An organic light emitting display device and a method of manufacturing the device are disclosed. The method includes forming a layer over an oxide semiconductor layer to protect the oxide semiconductor layer from damage as further layers are formed and etched. | 2011-05-12 |
20110108832 | LIQUID CRYSTAL DISPLAY DEVICE AND METHOD FOR FABRICATING THE SAME - Disclosed are a liquid crystal display device employing an amorphous zinc oxide-based semiconductor as an active layer, and a method for fabricating the same, whereby device stability can be secured by employing an etch stopper structure and device characteristics can be enhanced by minimizing exposure and deterioration of the active layer excluding content regions by virtue of the design of the etching stopper in a shape like “H”. Also, the liquid crystal display device and the fabrication method thereof can further form a semiconductor pattern and an insulating layer pattern on the intersection between the gate line and the data line, so as to compensate a stepped portion, thereby preventing an occurrence of short-circuit. | 2011-05-12 |
20110108833 | SEMICONDUCTOR DEVICE - An object is, in a thin film transistor including an oxide semiconductor layer, to reduce contact resistance between the oxide semiconductor layer and source and drain electrode layers electrically connected to the oxide semiconductor layer. The source and drain electrode layers have a stacked-layer structure of two or more layers in which a layer in contact with the oxide semiconductor layer is formed using a metal whose work function is lower than the work function of the oxide semiconductor layer or an alloy containing such a metal. Layers other than the layer in contact with the oxide semiconductor layer of the source and drain electrode layers are formed using an element selected from Al, Cr, Cu, Ta, Ti, Mo, or W, an alloy containing any of these elements as a component, an alloy containing any of these elements in combination, or the like. | 2011-05-12 |
20110108834 | SEMICONDUCTOR DEVICE - An object is, in a thin film transistor including an oxide semiconductor layer, to reduce contact resistance between the oxide semiconductor layer and source and drain electrode layers electrically connected to the oxide semiconductor layer. The source and drain electrode layers have a stacked-layer structure of two or more layers in which a layer in contact with the oxide semiconductor layer is formed using an oxide of a metal whose work function is lower than the work function of the oxide semiconductor layer or an oxide of an alloy containing such a metal. Layers other than the layer in contact with the oxide semiconductor layer of the source and drain electrode layers are formed using an element selected from Al, Cr, Cu, Ta, Ti, Mo, or W, an alloy containing any of these elements as a component, an alloy containing any of these elements in combination, or the like. | 2011-05-12 |
20110108835 | Transistors, methods of manufacturing a transistor and electronic devices including a transistor - A transistor, a method of manufacturing a transistor, and an electronic device including a transistor are provided, the transistor may include a channel layer having a multi-layer structure. The channel layer may have a double layer structure or a triple layer structure. At least two layers of the channel layer may have different oxygen concentrations. | 2011-05-12 |
20110108836 | SEMICONDUCTOR DEVICE - A solid-state image sensor which holds a potential for a long time and includes a thin film transistor with stable electrical characteristics is provided. When the off-state current of a thin film transistor including an oxide semiconductor layer is set to 1×10 | 2011-05-12 |
20110108837 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF - An object of an embodiment of the present invention is to manufacture a semiconductor device with high display quality and high reliability, which includes a pixel portion and a driver circuit portion capable of high-speed operation over one substrate, using transistors having favorable electric characteristics and high reliability as switching elements. Two kinds of transistors, in each of which an oxide semiconductor layer including a crystalline region on one surface side is used as an active layer, are formed in a driver circuit portion and a pixel portion. Electric characteristics of the transistors can be selected by choosing the position of the gate electrode layer which determines the position of the channel. Thus, a semiconductor device including a driver circuit portion capable of high-speed operation and a pixel portion over one substrate can be manufactured. | 2011-05-12 |
20110108838 | ELECTRO-MECHANICAL TRANSDUCER, AN ELECTRO-MECHANICAL CONVERTER, AND MANUFACTURING METHODS OF THE SAME - An electro-mechanical transducer contains a vibrating electrode ( | 2011-05-12 |
20110108839 | Thin Film Transistor Substrate and Manufacturing Method Thereof - A thin film transistor array panel according to an exemplary embodiment of the present invention comprises a substrate, a gate line formed on the substrate, a gate insulating layer formed on the gate line, a semiconductor layer formed on the gate insulating layer, and a data line formed on the semiconductor layer, wherein the data line comprises a lower data layer, an upper data layer, a data oxide layer, and a buffer layer, wherein the upper data layer and the buffer layer comprise a same material. | 2011-05-12 |
20110108840 | ORGANIC LIGHT EMITTING DIODE DISPLAY DEVICE AND METHOD OF FABRICATING THE SAME - An organic light emitting diode (OLED) display device and a method of fabricating the same are disclosed. The OLED display device includes a plurality of scan lines, a plurality of data lines, and a plurality of pixels disposed in a region in which the scan lines cross the data lines, where each pixel of the plurality of pixels includes: a switching transistor including a first gate electrode, a first semiconductor layer disposed over the first gate electrode, a first gate insulating layer interposed between the first gate electrode and the first semiconductor layer, a first source electrode and a first drain electrode, a driving transistor including a second semiconductor layer, a second gate electrode disposed over the second semiconductor layer, a second gate insulating layer interposed between the second gate electrode and the second semiconductor layer, a second source electrode and a second drain electrode, and an organic light emitting diode electrically connected with the second source and second drain electrodes of the driving transistor, where the first and second semiconductor layers are formed of the same material, and from the same processing. | 2011-05-12 |
20110108841 | SEMICONDUCTOR DEVICE, MANUFACTURING METHOD THEREOF, AND DISPLAY APPARATUS USING THE SEMICONDUCTOR DEVICE - Provided is a method of promoting a deposition of semiconductor crystal nuclei on an insulating film such as a silicon oxide film even at a low temperature of 450° C. or lower in a reactive thermal CVD method. As one means thereof, a first semiconductor film is formed on an insulating substrate, and then semiconductor crystal nuclei are formed on parts of the first semiconductor film and simultaneously the first semiconductor film other than that in forming regions of the semiconductor crystal nuclei and their peripheries is removed by etching. Thereafter, a second semiconductor film is formed with using the semiconductor crystal nuclei as seeds. | 2011-05-12 |
20110108842 | DISPLAY DEVICE AND ELECTRONIC APPARATUS - A display device in which variations in luminance due to variations in characteristics of transistors are reduced, and image quality degradation due to variations in resistance values is prevented. The invention comprises a transistor whose channel portion is formed of an amorphous semiconductor or an organic semiconductor, a connecting wiring connected to a source electrode or a drain electrode of the transistor, alight emitting element having a laminated structure which includes a pixel electrode, an electro luminescent layer, and a counter electrode, an insulating layer surrounding an end portion of the pixel electrode, and an auxiliary wiring formed in the same layer as a gate electrode of the transistor, a connecting wiring, or the pixel electrode. Further, the connecting wiring is connected to the pixel electrode, and the auxiliary wiring is connected to the counter electrode via an opening portion provided in the insulating layer. | 2011-05-12 |
20110108843 | COLLECTIONS OF LATERALLY CRYSTALLIZED SEMICONDUCTOR ISLANDS FOR USE IN THIN FILM TRANSISTORS - Collections of laterally crystallized semiconductor islands for use in thin film transistors and systems and methods for making same are described. A display device includes a plurality of thin film transistors (TFTs) on a substrate, such that the TFTs are spaced apart from each other and each include a channel region that has a crystalline microstructure and a direction along which a channel current flows. The channel region of each of the TFTs contains a crystallographic grain that spans the length of that channel region along its channel direction. Each crystallographic grain in the channel region of each of the TFTs is physically disconnected from and crystallographically uncorrelated with each crystallographic grain in the channel region of each adjacent TFT. | 2011-05-12 |
20110108844 | ORGANIC LIGHT EMITTING DISPLAY - An organic light emitting display (OLED) is disclosed. The OLED includes a storage capacitor formed in a first region of the substrate, a thin film transistor formed in a second region of the substrate, a first data line capacitor formed in a third region of the substrate, an organic light emitting diode formed on the storage capacitor and the thin film transistor, and a second data line capacitor formed on the data line capacitor. | 2011-05-12 |
20110108845 | DISPLAY DEVICE - In a display device, the display device includes a substrate, a red color filter layer, a green color filter layer, and a blue color filter layer. The substrate has red, green and blue sub-pixel regions. The red color filter layer is located on the red, green and blue sub-pixel regions, and has a first opening formed in the green sub-pixel region and a second opening formed in the blue sub-pixel region. The green color filter layer is located in the first opening. The blue color filter layer is located in the second opening. Since the red color filter layer is used as an interlayer insulating layer, there is no need to perform a separate process to form a color filter layer and a process for an interlayer insulating layer can be omitted. Thus, it can simplify a process. | 2011-05-12 |
20110108846 | ARRAY SUBSTRATE FOR DISPLAY DEVICE - Disclosed is array substrate including a pixel region having a switching region, a driving region and a storage region. A switching TFT in the switching region includes a first gate electrode, a first gate insulating layer, a switching active layer on the first gate insulating layer, a switching source electrode on a first switching ohmic contact layer, and a switching drain electrode on a second switching ohmic contact layer; a driving TFT in the driving region is connected to the switching TFT and includes a first gate electrode, a second gate insulating layer, a driving active layer on the second gate insulating layer, a driving source electrode on a first driving ohmic contact layer, and a driving drain electrode on a second driving ohmic contact layer; wherein at least one of the switching and driving TFTs further includes a second gate electrode over the switching or driving active layers. | 2011-05-12 |
20110108847 | THIN FILM TRANSISTOR, METHOD OF FABRICATING THE SAME, ORGANIC LIGHT EMITTING DIODE DISPLAY DEVICE HAVING THE SAME, AND METHOD OF FABRICATING THE SAME - A thin film transistor (TFT), a method of fabricating the same, an organic light emitting diode (OLED) display device having the same, and a method of fabricating the same. The TFT includes a substrate; a buffer layer disposed on the substrate; a semiconductor layer disposed on the buffer layer; a gate insulating layer disposed on the semiconductor layer; a gate electrode disposed on the gate insulating layer and corresponding to the semiconductor layer; and source and drain electrodes insulated from the gate electrode, and electrically connected to the semiconductor layer. Here, the semiconductor layer includes a plurality of seed regions separated from each other by a distance of 50 μm or more. | 2011-05-12 |
20110108848 | Organic Light Emitting Display Device and Manufacturing Method Thereof - An organic light emitting display having an active layer of a thin film transistor formed on a substrate, a first conductive layer formed at an edge of the active layer, a first insulation layer formed on the substrate and the first conductive layer, a second conductive layer corresponding to a central area of the active layer formed on the first insulation layer, a fanout lower electrode separated a predetermined distance from the second conductive layer, a pixel electrode, a third conductive layer formed on the second conductive layer, a fanout upper electrode formed on the fanout lower electrode, a second insulation layer formed on the third conductive layer, the fanout upper electrode, and the pixel electrode, and source and drain electrodes contacting the pixel electrode and formed on the second insulation layer. | 2011-05-12 |
20110108849 | TFT-LCD PIXEL UNIT AND METHOD FOR MANUFACTURING THE SAME - A thin film transistor liquid crystal display (TFT-LCD) pixel unit and a method for manufacturing the same. The pixel unit comprises a gate line and a gate electrode formed on a substrate and a first gate insulating layer, an active layer, and a doped layer sequentially that are formed on the gate line and the gate electrode. An intercepting trench is formed on the gate line to cut off the doped layer and the active layer on the gate line. A second insulating layer covers the intercepting trench and the substrate where the gate line and the gate electrode are not formed. A pixel electrode is formed on the second insulating layer and is integrated with the second source/drain electrode. | 2011-05-12 |
20110108850 | METHOD OF MANUFACTURING AN INTEGRATED SEMICONDUCTOR SUBSTRATE STRUCTURE - An integrated semiconductor substrate structure is disclosed. In one aspect, the structure includes a substrate, a GaN-heterostructure and a semiconductor substrate layer. The GaN heterostructure is present in a first device area for definition of GaN-based devices, and is covered at least partially with a protection layer. The semiconductor substrate layer is present in a second device area for definition of CMOS devices. At least one of the GaN heterostructure and the semiconductor substrate layer is provided in at least one trench in the substrate, so that the GaN heterostructure and the semiconductor substrate layer are laterally juxtaposed. | 2011-05-12 |
20110108851 | VERTICAL LIGHT EMITTING DIODE HAVING AN OUTWARDLY DISPOSED ELECTRODE - The invention relates to a vertical light emitting diode (VLED) having an outwardly disposed electrode, the vertical light emitting diode comprises a conductive base, a semiconductor epitaxial structure formed on the conductive base, a passivation layer formed at the periphery of the semiconductor epitaxial structure, and a conductive frame formed on the passivation layer and contacting with the edge of the upper surface of the semiconductor epitaxial structure such that the conductive frame is electrically connected to the semiconductor epitaxial structure. | 2011-05-12 |
20110108852 | GaN SUBSTRATE AND LIGHT-EMITTING DEVICE - The present GaN substrate can have an absorption coefficient not lower than 7 cm | 2011-05-12 |
20110108853 | COMPOUND SEMICONDUCTOR DEVICE - A compound semiconductor device having reduced contact resistance to an electrode is provided. The compound semiconductor device includes an n-substrate | 2011-05-12 |
20110108854 | SUBSTANTIALLY LATTICE MATCHED SEMICONDUCTOR MATERIALS AND ASSOCIATED METHODS - Semiconductor devices having atomic lattice matching template interlayers are provided. In one aspect, a semiconductor device can include a first semiconductor material, a second semiconductor material disposed on the first semiconductor material, and an atomic template interlayer disposed between the first semiconductor material and the second semiconductor material, the atomic template interlayer bonding together and facilitating a substantial lattice matching between the first semiconductor material and the second semiconductor material. | 2011-05-12 |
20110108855 | METHOD OF FORMING VIAS IN SILICON CARBIDE AND RESULTING DEVICES AND CIRCUITS - A method of fabricating an integrated circuit on a silicon carbide substrate is disclosed that eliminates wire bonding that can otherwise cause undesired inductance. The method includes fabricating a semiconductor device including a Group III-V semiconductor layer on a surface on a silicon carbide substrate, wherein the semiconductor device defines at least one via through the silicon carbide substrate and the epitaxial layer. | 2011-05-12 |
20110108856 | ORGANIC LIGHT EMITTING DIODE AND ORGANIC SOLAR CELL STACK - This disclosure relates to an organic solar cell and an organic light emitting diode stack. The stack comprises a solar cell portion having a substrate, an electrode, an active layer, and a second electrode. The stack also comprises a light emitting diode portion having a substrate, an electrode, an active layer, and a second electrode. The solar cell portion is laminated to the light emitting diode portion to form a stack. In a variation, the stack comprises a solar cell portion that includes a substrate, an electrode and an active layer. In this variation, there is a connection portion that includes a second substrate, having a second electrode on one side and a third electrode on the other side of the second substrate. Also in this variation, there is also a light emitting diode portion, which includes a third substrate, an electrode on the third substrate and a second active layer. The solar cell portion is laminated to the connection portion and the connection portion is laminated to the light emitting diode portion to form a stack. | 2011-05-12 |
20110108857 | HOUSING FOR HIGH-POWER LEDS - The present invention relates to a housing for radiation-emitting or radiation-receiving optoelectronic components, such as LEDs, and to a method for producing said housing. The housing comprises a composite assembly comprising a base pan ( | 2011-05-12 |
20110108858 | STABLE LIGHT SOURCE - Light emitting systems are disclosed. The light emitting system emits an output light that has a first color. The light emitting system includes a first electroluminescent device that emits light at a first wavelength in response to a first signal. The first wavelength is substantially independent of the first signal. The intensity of the emitted first wavelength light is substantially proportional to the first signal. The light emitting system further includes a first luminescent element that includes a second electroluminescent device and a first light converting layer. The second electroluminescent device emits light at a second wavelength in response to a second signal. The first light converting layer includes a semiconductor potential well and converts at least a portion of light at the second wavelength to light at a third wavelength that is longer than the second wavelength. The light emitting system combines light at the first wavelength with light at the third wavelength to form the output light at the first color. When one of the first and second signals changes from about 50% of a maximum rating of the signal to about 100% of the maximum rating, but the ratio of the first signal to the second signal remains substantially unchanged, the first color of the output light remains substantially unchanged. | 2011-05-12 |
20110108859 | ORGANIC ELECTROLUMINESCENCE ELEMENT AND MANUFACTURING METHOD THEREOF - An organic luminescence includes pixel electrodes. Banks are each generally between adjacent ones of the pixel electrodes. The banks define apertures that each correspond to one of the pixel electrodes. An organic luminescent layer is within each of the apertures, and an upper electrode is above the banks and the organic luminescent layer. At least a portion of a periphery of each of the apertures includes curved portions and cusps. The curved portions are concave, and adjacent ones of the curved portions define each of the cusps. | 2011-05-12 |
20110108860 | OPTOELECTRONIC MODULE - An optoelectronic module includes a layer structure having a plurality of semiconductor layers including a substrate layer, a first layer arrangement and a second layer arrangement arrangement, wherein 1) the first layer arrangement has a light-emitting layer arranged on the substrate layer, 2) the second layer arrangement contains at least one circuit that controls an operating state of the light-emitting layer, and 3) the second layer arrangement is arranged on the substrate layer and/or surrounded by the substrate layer. | 2011-05-12 |
20110108861 | PROCESS FOR ANISOTROPIC ETCHING OF SEMICONDUCTORS - A method is provided for anisotropically etching semiconductor materials such as II-VI and III-V semiconductors. The method involves repeated cycles of plasma sputter etching of semiconductor material with a non-reactive gas through an etch mask, followed by passivation of the side walls by plasma polymerization using a polymer former. Using this procedure small pixels in down-converted light-emitting diode devices can be fabricated. | 2011-05-12 |
20110108862 | LIGHT-EMITTING-DIODE ARRAY AND METHOD FOR MANUFACTURING THE SAME - A light-emitting-diode (LED) array is disclosed which comprises a first LED device having a first electrode, a second LED device having a second electrode, wherein the first and the second LED device are formed on the same substrate and separated by a gap, at least one polymer material substantially filling the gap, and an interconnect, formed on top of the at least one polymer material, electrically connecting the first and the second electrode. | 2011-05-12 |
20110108863 | METHOD FOR MANUFACTURING AN ELECTRO-OPTICAL DEVICE - An object of the present invention is to provide an EL display device having high operation performance and reliability. | 2011-05-12 |
20110108864 | LIGHT EMITTING DEVICE - Light-emitting elements have a problem that their light-extraction efficiency is low due to scattered light or reflected light inside the light-emitting elements. The light-extraction efficiency of the light-emitting elements needs to be enhanced by a new method. According to the present invention, a light-emitting element includes a first layer generating holes, a second layer including a light-emitting layer for each emission color and a third layer generating electrons between an anode and a cathode, and the thickness of the first layer is different depending on each layer including the light-emitting layer for each emission color. A layer in which an organic compound and a metal oxide are mixed is used as the first layer, and thus, the driving voltage is not increased even when the thickness is increased, which is preferable. | 2011-05-12 |
20110108865 | SILICONE BASED REFLECTIVE UNDERFILL AND THERMAL COUPLER - In one embodiment, a flip chip LED is formed with a high density of gold posts extending from a bottom surface of its n-layer and p-layer. The gold posts are bonded to submount electrodes. An underfill material is then molded to fill the voids between the bottom of the LED and the submount. The underfill comprises a silicone molding compound base and about 70-80%, by weight, alumina (or other suitable material). Alumina has a thermal conductance that is about 25 times better than that of the typical silicone underfill, which is mostly silica. The alumina is a white powder. The underfill may also contain about 5-10%, by weight, TiO | 2011-05-12 |
20110108866 | LED PACKAGE AND METHOD FOR FABRICATING THE SAME - An LED package is disclosed herein. The disclosed LED package comprises a base having an LED chip mounted thereon, an encapsulation member formed by a light-transmittable resin to encapsulate the LED chip, and a housing formed to expose a top portion of the encapsulation member and to encompass a side surface of the encapsulation member, wherein the encapsulation member is formed by a transfer molding process using a mold to have a predetermined shape. Further, the housing may be light-transmittable. | 2011-05-12 |
20110108867 | LIGHT-EMITTING DEVICE AND METHOD FOR MANUFACTURING THE SAME - The embodiment is to provide a light emitting device and a method for manufacturing the same, in which the light emitting device includes a first conductive semiconductor layer; an active layer formed on the first conductive semiconductor layer; a second conductive semiconductor layer formed on the active layer; and a phosphor layer formed on the second conductive semiconductor layer; in which the phosphor layer includes a phosphor receiving member including a plurality of cavities and phosphor particles fixed in the cavities. | 2011-05-12 |
20110108868 | LIGHT EMITTING DEVICE, LIGHT EMITTING DEVICE PACKAGE AND LIGHTING SYSTEM - A light emitting device according to an embodiment includes a first conductive semiconductor layer; a second conductive semiconductor layer; and an active layer including first and second active layers between the first and second conductive semiconductor layers. The first active layer emits light having a first wavelength band of 440 nm to 500 nm, and the second active layer emits light having a second wavelength band, which is shorter than the first wavelength band. | 2011-05-12 |
20110108869 | LIGHT EMITTING DEVICE, LIGHT EMITTING DEVICE PACKAGE AND LIGHTING SYSTEM - Embodiments relate to a light emitting device, a light emitting device package, and a lighting system. The light emitting device comprises: a light emitting structure including a first conductive type semiconductor layer, an active layer over the first conductive type semiconductor layer, and a second conductive type semiconductor layer over the active layer; a dielectric layer formed in each of a plurality of cavities defined by removing a portion of the light emitting structure; and a second electrode layer over the dielectric layer. | 2011-05-12 |
20110108870 | OPTOELECTRONIC SEMICONDUCTOR COMPONENT AND PRINTED CIRCUIT BOARD - An optoelectronic semiconductor component includes a connection carrier with at least two connection points and configured with a silicone matrix with a fiber reinforcement, and at least one optoelectronic semiconductor chip mounted on the connection carrier and in direct contact therewith. | 2011-05-12 |
20110108871 | EDGE LED PACKAGE - An edge LED package includes a base, an LED die and a reflective cup. The LED die is located on a surface of the base. The reflective cup includes an inner sidewall surrounding the LED die. The inner sidewall inclines outward from the base to form an included angle from 140 to 150°. The depth of the reflective cup, measured vertically from top of the reflective cup to the bottom, is about 0.25 mm to 0.3 mm. The area ratio between the opening area of the reflective cup and the base area surrounded by the reflective cup is about 1.5 to 2. | 2011-05-12 |
20110108872 | LIGHT EMITTING DEVICE AND LIGHT EMITTING DEVICE PACKAGE - A light emitting device according to the embodiment includes a substrate; a buffer layer over the substrate; an electrode including a perforation pattern through top and bottom surfaces of the electrode over the buffer layer; a first semiconductor layer over the electrode; an active layer over the first semiconductor layer; and a second semiconductor layer over the active layer. The first semiconductor layer extends onto a top surface of the perforation pattern by passing through the perforation pattern while making contact with the buffer layer. | 2011-05-12 |
20110108873 | LIGHT EMITTING DIODE STRUCTURE UTILIZING ZINC OXIDE NANOROD ARRAYS ON ONE OR MORE SURFACES, AND A LOW COST METHOD OF PRODUCING SUCH ZINC OXIDE NANOROD ARRAYS - A method of fabricating a Light Emitting Diode with improved light extraction efficiency, comprising depositing a plurality of Zinc Oxide (ZnO) nanorods on one or more surfaces of a III-Nitride based LED, by growing the ZnO nanorods from an aqueous solution, wherein the surfaces are different from c-plane surfaces of III-Nitride and transmit light generated by the LED. | 2011-05-12 |
20110108874 | Method to Provide Microstructure for Encapsulated Hgh-Brightness LED Chips - Encapsulated LEDs can be made by taking a mold tool defining a cavity that defines a lens shape and providing a patterned release film defining the inverse of a microstructure in a surface of the film. The patterned release film is conformed to the cavity of the mold tool. An LED chip is placed in a spaced relationship from the patterned release film in the cavity. A resin is then introduced into the space between the LED chip and the patterned release film in the cavity. The resin is cured in the space between the LED chip and the patterned release film in the cavity while contact is maintained between the patterned release film and the curing resin. The encapsulated LED is then freed from the mold tool and the patterned release film. | 2011-05-12 |
20110108875 | LIGHT-EMITTING DEVICE AND METHOD FOR PRODUCING SAME - There is provided a light emitting device highly resistant to the environment, and having good heat resistance, light resistance and gas barrier property, and a method for producing same. With the light emitting device, a substrate | 2011-05-12 |
20110108876 | PAD STRUCTURE AND MANUFACTURING METHOD THEREOF - A pad structure includes a copper circuit pattern on a substrate, at least a gold layer stacked on the copper circuit pattern, and a nano-structured coating film stacked on the gold layer. | 2011-05-12 |
20110108877 | LIGHT EMITTING ELEMENT AND METHOD OF MANUFACTURING THE SAME - A light emitting element includes a first electrode, an organic layer formed on the first electrode, a resistance layer formed on the organic layer, a second electrode, and a conductive resin layer formed between the resistance layer and the second electrode. | 2011-05-12 |
20110108878 | ANISOTROPIC CONDUCTIVE ADHESIVE - An anisotropic conductive adhesive includes an epoxy adhesive containing an epoxy compound and a curing agent and conducive particles dispersed in the epoxy adhesive. When elastic moduluses at 35° C., 55° C., 95° C., and 150° C. of a cured product of the anisotropic conductive adhesive are denoted by EM | 2011-05-12 |
20110108879 | LIGHT-EMITTING DEVICE - A light-emitting device comprising a semiconductor light-emitting stack, comprising a light emitting area; an electrode formed on the semiconductor light-emitting stack, wherein the electrode comprises a current injected portion and an extension portion; a current blocking structure formed between the current injected portion and the semiconductor light-emitting stack, and formed between a first part of the extension portion and the semiconductor light-emitting stack; and an electrical contact structure formed between a second part of the extension portion and the semiconductor light-emitting stack. | 2011-05-12 |
20110108880 | ORGANIC EL ELEMENT, METHOD FOR MANUFACTURING ORGANIC EL ELEMENT, ORGANIC EL DEVICE, AND ELECTRONIC APPARATUS - An organic EL element includes a functional layer disposed between an anode and a cathode on a substrate and including laminated different organic thin films including a light-emitting layer, and a partition wall which defines the functional layer. Each of the organic thin films is formed by applying a liquid containing a functional layer-forming material on a film-forming region defined by the partition wall and then drying the liquid. The partition wall has at least one step portion provided in the side wall thereof in the thickness direction, and liquid repellency is imparted to the uppermost surface of the partition wall and the upper surface of the step portion. The surface of the side wall excluding the step portion has lyophilicity in comparison with the upper surface of the step portion. | 2011-05-12 |
20110108881 | METHOD FOR MANUFACTURING LIGHT-EMITTING DIODE - A semiconductor structure is first provided. The semiconductor structure includes a sapphire substrate and a semiconductor light-emitting layer. A first surface of the semiconductor light-emitting layer covers and contacts with the sapphire substrate. Then, the semiconductor structure is fixed on a supported base. The sapphire substrate is further removed from the semiconductor structure. After that, a high heat-conductive layer is formed on the first surface of the semiconductor light-emitting layer to form a light-emitting diode. Finally, the supported base is separated from the light-emitting diode. | 2011-05-12 |
20110108882 | SEMICONDUCTOR DEVICE INTERNALLY HAVING INSULATED GATE BIPOLAR TRANSISTOR - The semiconductor device includes a P-type semiconductor region and an MOS transistor. MOS transistor includes a gate electrode, a collector electrode, a drain electrode, an N-type impurity region and a P-type impurity region. N-type impurity region is electrically connected to the drain electrode. P-type impurity region is electrically connected to the collector electrode. P-type impurity region is electrically connected to the drain electrode. The semiconductor device further includes an N-type impurity region and an electrode. N-type impurity region is electrically connected to the gate electrode. The electrode is formed on the P-type semiconductor region with an insulating film therebetween, and is electrically connected to gate electrode. Thereby, an element footprint can be reduced while maintainingcharacteristics. | 2011-05-12 |
20110108883 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF - Cutting work is performed on an n-semiconductor substrate ( | 2011-05-12 |
20110108884 | PHOTOELECTRIC CONVERSION ELEMENT - Disclosed is a photoelectric conversion element comprising an anode, a cathode, and an active layer between the anode and the cathode, wherein the active layer includes an n-type semiconductor and a p-type semiconductor, and an area of a p-n junction between the n-type semiconductor and the p-type semiconductor is 100 μm | 2011-05-12 |
20110108885 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE - The object of the present invention is to increase channel current density while a GaN-based field effect transistor operates in a normally-off mode. Provided is a semiconductor device comprising a group 3-5 compound semiconductor channel layer containing nitrogen, an electron supply layer that supplies electrons to the channel layer, a semiconductor layer that is formed on a side of the electron supply layer opposite the side facing the channel layer and that is an intrinsic or n-type group 3-5 compound semiconductor containing nitrogen, and a control electrode that is formed to contact the semiconductor layer or formed with an intermediate layer interposed between itself and the semiconductor layer. | 2011-05-12 |
20110108886 | METHOD OF CONTROLLING STRESS IN GROUP-III NITRIDE FILMS DEPOSITED ON SUBSTRATES - Methods of controlling stress in GaN films deposited on silicon and silicon carbide substrates and the films produced therefrom are disclosed. A typical method comprises providing a substrate and depositing a graded gallium nitride layer on the substrate having a varying composition of a substantially continuous grade from an initial composition to a final composition formed from a supply of at least one precursor in a growth chamber without any interruption in the supply. A typical semiconductor film comprises a substrate and a graded gallium nitride layer deposited on the substrate having a varying composition of a substantially continuous grade from an initial composition to a final composition formed from a supply of at least one precursor in a growth chamber without any interruption in the supply. | 2011-05-12 |
20110108887 | MULTILAYER BARRIER III-NITRIDE TRANSISTOR FOR HIGH VOLTAGE ELECTRONICS - An improved high breakdown voltage semiconductor device and method for manufacturing is provided. The device has a substrate and a Al | 2011-05-12 |
20110108888 | SYSTEM COMPRISING A SEMICONDUCTOR DEVICE AND STRUCTURE - A semiconductor device includes a first mono-crystallized layer including first transistors, and a first metal layer forming at least a portion of connections between the first transistors; and a second layer including second transistors, the second transistors including mono-crystalline material, the second layer overlying the first metal layer, wherein the first metal layer includes aluminum or copper, and wherein the second layer is less than one micron in thickness and includes logic cells. | 2011-05-12 |
20110108889 | SEMICONDUCTOR DEVICE WITH A 7F2 CELL STRUCTURE - A semiconductor device with a 7F | 2011-05-12 |
20110108890 | Semiconductor Device with Dynamic Array Sections Defined and Placed According to Manufacturing Assurance Halos - An integrated circuit device includes a plurality of dynamic array sections, each of which includes three or more linear conductive segments formed within its gate electrode level in a parallel manner to extend lengthwise in a first direction. An adjoining pair of dynamic array sections are positioned to have co-located portions of outer peripheral boundary segments extending perpendicular to the first direction. Some of the three or more linear conductive segments within the gate electrode levels of the adjoining pair of dynamic array sections are co-aligned in the first direction and separated by an end-to-end spacing that spans the co-located portions of outer peripheral boundary segments of the adjoining pair of dynamic array sections. Each of these end-to-end spacings is sized to ensure that each gate electrode level manufacturing assurance halo portion of the first adjoining pair of dynamic array sections is devoid of the co-aligned linear conductive segments. | 2011-05-12 |