20th week of 2013 patent applcation highlights part 15 |
Patent application number | Title | Published |
20130119300 | STABLE FORMULATED SYSTEMS WITH CHLORO-3,3,3-TRIFLUOROPROPENE - The present invention relates to formulated refrigerant systems of 1-chloro-3,3,3-trifluoropropene (R-1233zd) that are sufficiently thermally and chemically stable such that they can be effectively used sans additional stabilizers. The formulations of the present invention are particularly useful compositions for refrigeration, heat transfer. | 2013-05-16 |
20130119301 | METHOD OF MODULATED EXOTHERMIC CHEMICAL SYSTEMS THROUGH PHASE CHANGE MATERIALS - The chemical reactions modulation of temperature and dissipate heat through using phase change materials (PCM). Hydration of a mixture composed of encapsulated and/or non-encapsulated oxides such as calcium oxide and/or magnesium oxide and dehydrated and/or hydrated zeolite coupled with control of pH of mixture through compounds such as Citric acid, or combination exothermic mixes, such as Cao and Mg—Fe, provide sustained heat release and heat retention tailored by addition of PCMs. The modulation may include timed/controlled release from encapsulated reactants and may include particles with tailored size distribution and different burn characteristics. The phase change materials used include organics (paraffins, non paraffins and fatty acids) and inorganics (salt hydrates). The selection of PCM is based on compatibility with the reacting mix, added reacting aqueous medium, and the desired temperature the system is to be held constant or temperature range it is desired to be modulated. | 2013-05-16 |
20130119302 | HEAT TRANSFER ENHANCING AGENT - An enhancing agent for increasing heat transfer efficiency is disclosed, which is an additive composed of a nano-scale powder and a micro-scale powder that is to be added into a heat-transfer fluid circulating in an heat exchange system or in a coolant circulating in a cooling system for enhancing the heat conductivity of the heat-transfer fluid or the coolant while helping the tank and the fluid passages used in those systems to maintain clean, and eventually enabling those systems to operate with improved heat dissipation effect. By adding the aforesaid enhancing agent into a cooling system of an internal-combustion engine, the heat shock inside the engine that is originated from the fuel burning in the engine can be reduced, resulting that not only the amount of green house gas emission is reduced, but also the chance of engine juddering that is generally originated from poor heat dissipation can be decreased. | 2013-05-16 |
20130119303 | MEDIUM FOR IMPROVING THE HEAT TRANSFER IN STEAM GENERATING PLANTS - The present invention relates to a medium in the form of an aqueous mixture for improving the heat transfer coefficient and use thereof in power plant technology, in particular in steam generating plants. The medium contains at least one film-forming amine (component a) with the general formula: R—(NH—(CH2)m)n—NH2/, where R is an aliphatic hydrocarbon radical with a chain length between 12 and 22 and m is an integral number between 1 and 8 and n is an integral number between 0 and 7, contained in amounts up to 15%. | 2013-05-16 |
20130119304 | CLATHRATE HYDRATE WITH LATENT HEAT STORING CAPABILITY, PROCESS FOR PRODUCING THE SAME, AND APPARATUS THEREFOR, LATENT HEAT STORING MEDIUM, AND METHOD OF INCREASING AMOUNT OF LATENT HEAT OF CLATHRATE HYDRATE AND PROCESSING APPARATUS FOR INCREASING AMOUNT OF LATENT HEAT OF CLATHRATE HYDRATE - An apparatus for production of a clathrate hydrate with enhanced latent heat storing capability includes a gas supplier for supplying a gas to an aqueous solution containing a quaternary ammonium compound, and a cooler for cooling the aqueous solution, the apparatus producing the clathrate hydrate with enhanced latent heat storing capability including both the quaternary ammonium compound and the gas as guests by supplying the gas to the aqueous solution with the gas supplier in the stage of cooling with the cooler. | 2013-05-16 |
20130119305 | METHOD AND COMPOSITIONS FOR PRODUCING OPTICALLY CLEAR PHOTOCATALYTIC COATINGS - The invention relates to a method and compositions for producing a hydrophilic coating on a surface of a solid material. The method comprises a cleaning step and a coating step. The cleaning step may be preceded by an initial cleaning step and it may optionally be succeded by a preconditioning step prior to the coating step. The cleaning step comprises cleaning and preconditioning a surface of a material by use of a first cleaning fluid composition comprising ceria (CeO | 2013-05-16 |
20130119306 | COMPOSITE, METHOD OF MANUFACTURING THE COMPOSITE, NEGATIVE ELECTRODE ACTIVE MATERIAL INCLUDING THE COMPOSITE, NEGATIVE ELECTRODE INCLUDING THE NEGATIVE ELECTRODE ACTIVE MATERIAL, AND LITHIUM SECONDARY BATTERY INCLUDING THE SAME - A composite, method of manufacturing the composite, negative electrode active material including the composite, negative electrode including the negative electrode active material, and lithium secondary battery including the same, the composite including a lithium titanium oxide, and a bronze phase titanium oxide. | 2013-05-16 |
20130119307 | LITHIUM COMPOSITE COMPOUND PARTICLES AND PROCESS FOR PRODUCING THE SAME, AND NON-AWUEOUS ELECTROLYTE SECONDARY BATTERY - The present invention aims to provide lithium composite compound particles which can exhibit good cycle characteristics and an excellent high-temperature storage property when used as a positive electrode active substance of a secondary battery, and a secondary battery using the lithium composite compound particles. The present invention relates to lithium composite compound particles having a composition represented by the compositional formula: Li | 2013-05-16 |
20130119308 | Melt Stabilization and Vapor-Phase Synthesis of Cesium Germanium Halides - The method described herein allows for melt stabilization and vapor-phase synthesis of a cesium germanium halide utilizing germanium dihalides formed in situ. This disclosure allows for the melting of cesium germanium halides without decomposition, which allows for growing crystals of these materials from the melt. This disclosure allows for a direct synthesis of these materials without the use of water or the introduction of other possible contaminants. | 2013-05-16 |
20130119309 | METHOD FOR PRODUCING A WATER-ABSORBENT RESIN - A method for producing a water-absorbent resin comprising at least two stages of reversed-phase suspension polymerization, wherein the first stage of the at least two stages of reversed-phase suspension polymerization comprises the following steps of: (A) performing a primary dispersion by stirring to mix in the absence of surfactants an aqueous solution of a water-soluble ethylenically unsaturated monomer containing a hydrophilic polymeric dispersion agent with a petroleum hydrocarbon dispersion medium in which a hydrophobic polymeric dispersion agent dissolves or disperses; (B) further performing a secondary dispersion by adding a surfactant to the resultant dispersion liquid; and (C) performing a polymerization by using a water-soluble radical polymerization initiator to obtain a water-absorbent resin as particles in a hydrous gel state which disperse in the petroleum hydrocarbon dispersion medium, and a water-absorbent resin obtained by the method. | 2013-05-16 |
20130119310 | LIQUID CRYSTAL COMPOUND, LIQUID CRYSTAL COMPOSITION AND LIQUID CRYSTAL DISPLAY DEVICE - To provide a novel liquid crystal compound having general physical properties necessary for the compound, namely, stability to heat, light and so forth, a wide temperature range of a liquid crystal phase, a high clearing point, a good compatibility with other compounds, a large refractive index anisotropy, a large dielectric anisotropy and a small viscosity. The liquid crystal compound is provided as compound (1): | 2013-05-16 |
20130119311 | POLYMER-STABILISED LIQUID-CRYSTAL MEDIA AND DISPLAYS - The present invention relates to liquid-crystalline media and display devices comprising polymerisable compounds, to the use of the polymerisable compounds for optical, electro-optical and electronic purposes, in particular in liquid-crystal (LC) media and LC displays having a polymer-stabilised blue phase, and in LC media for LC displays of the PS or PSA (“polymer sustained” or “polymer sustained alignment”) type. The polymerisable compounds comprise a ring system which is functionalised by three or more polymerisable groups, each connected via an optional spacer group. | 2013-05-16 |
20130119312 | LIQUID CRYSTAL MEDIUM CONTAINING THIOPHENE DERIVATIVES - The present invention relates to liquid-crystalline media (LC media) comprising thiophene derivatives and to liquid-crystal displays (LC displays) containing these LC media. The media have high optical anisotropy and preferably have a content of thiophene derivatives of 25% by weight or more. | 2013-05-16 |
20130119313 | SILICATE FLUORESCENT MATERIAL AND PREPARATION METHOD THEREOF - A silicate fluorescent material is provided. The general chemical formula of the luminescent material is Ln | 2013-05-16 |
20130119314 | METHOD FOR BIOMASS FRACTIONING BY ENHANCING BIOMASS THERMAL CONDUCTIVITY - A method is disclosed for generating useful chemical intermediates from biomass using a novel pyrolysis reactor that utilizes the inherent thermal properties of carbon under compression as the biomass is subjected to sequential or concurrent temperature ramps. The ramps are sufficient to volatilize and selectively create different components, while the pressure application aids the selective decomposition of the biomass. | 2013-05-16 |
20130119315 | GAS DISTRIBUTOR FOR A ROTARY KILN - A rotating air distributor for rotary reactors such as rotary kilns for the gasification of biomass and other carbonaceous materials for efficient mixing and maximum conversion of solid biomass and other carbonaceous materials into synthesis fuel gas is disclosed. The invention includes a gas distribution port comprises of one main supply from which several discharge nozzles emerge at different angles and at different locations along the length of the reactor to provide distribution of gas throughout the intended length of the reactor. The discharge of gas from the gas distribution port is adjusted by the variable position of a plug inside the port that can be adjusted during the operation of the kiln to achieve optimum gas-solid interaction along the length of the reactor. The rotating action of the gas distribution port also facilitates and eases the passage of reacted biomass solid and other carbonaceous material residue through the reactor. | 2013-05-16 |
20130119316 | Boron nitride and boron nitride nanotube materials for radiation shielding - Effective radiation shielding is required to protect crew and equipment in various fields including aerospace, defense, medicine and power generation. Light elements and in particular hydrogen are most effective at shielding against high-energy particles including galactic cosmic rays, solar energetic particles and fast neutrons. However, pure hydrogen is highly flammable, has a low neutron absorption cross-section, and cannot be made into structural components. Nanocomposites containing the light elements Boron, Nitrogen, Carbon and Hydrogen as well dispersed boron nano-particles, boron nitride nanotubes (BNNTs) and boron nitride nano-platelets, in a matrix, provide effective radiation shielding materials in various functional forms. Boron and nitrogen have large neutron absorption cross-sections and wide absorption spectra. The incorporation of boron and nitrogen containing nanomaterials into hydrogen containing matrices provides composites that can effectively shield against neutrons and a wide range of radiation species of all energies without fragmentation and the generation of harmful secondary particles. | 2013-05-16 |
20130119317 | Method for Forming a Liquid Crystalline Thermoplastic Composition - A method for forming a liquid crystalline thermoplastic composition is provided. The method comprises blending at least one thermotropic liquid crystalline polymer and a plurality of fibers within an extruder. The extruder contains at least one rotatable screw received within a barrel (e.g., cylindrical barrel) and defines a feed section and a melting section located downstream from the feed section along the length of the screw. Relatively long fibers are initially supplied to the feed section of the extruder, but at a location downstream from the liquid crystalline polymer so that the polymer is still in a solid state when it initially contacts the fibers. In this manner, the present inventors have discovered that the polymer can act as an abrasive agent for reducing the length of the fibers. | 2013-05-16 |
20130119318 | BINDER FOR LITHIUM ION SECONDARY BATTERY ELECTRODE, SLURRY OBTAINED USING THE BINDER FOR ELECTRODE, ELECTRODE OBTAINED USING THE SLURRY, AND LITHIUM ION SECONDARY BATTERY USING THE ELECTRODE - An object of the present invention is to provide: a binder for a lithium ion secondary battery electrode, which is water-dispersible type and has favorable adhesion between active materials and between the active material and current collectors, along with charge-discharge high-temperature cycle characteristics; a slurry using the binder; an electrode using the slurry; and a lithium ion secondary battery using the electrode. The present invention relates to a binder composition for a lithium ion secondary battery electrode, which is obtained by emulsion polymerization of an ethylenically unsaturated monomer in the presence of a surfactant, the ethylenically unsaturated monomer containing, as essential constituents, 15 to 70 mass % of styrene with respect to the total mass of ethylenically unsaturated monomers, an ethylenically unsaturated carboxylic acid ester, an ethylenically unsaturated carboxylic acid and an internal cross-linking agent. | 2013-05-16 |
20130119319 | CERAMIC BORON-CONTAINING DOPING PASTE AND METHODS THEREOF - A ceramic boron-containing dopant paste is disclosed. The ceramic boron-containing dopant paste further comprising a set of solvents, a set of ceramic particles dispersed in the set of solvents, a set of boron compound particles dispersed in the set of solvents, a set of binder molecules dissolved in the set of solvents. Wherein, the ceramic boron-containing dopant paste has a shear thinning power law index n between about 0.01 and about 1. | 2013-05-16 |
20130119320 | ELECTROCONDUCTIVE THERMOPLASTIC RESIN - In a tumbler and the like, polypropylene pellets are blended with 1 to 5 wt. % of carbon nanotubes, 10 to 30 wt % of fly ash, 10 to 20 wt % of talc and 0.3 to 1 wt % of a modifier, the resulting blend is extruded from a screw extruder while heating the blend to a melting temperature of about 160 to 260° C., to generate a strand. This strand is cooled and cut into pellets having a predetermined length. Owing to blending with fly ash, talc and a modifier, an inexpensive lightweight electroconductive thermoplastic resin excellent in dust-proofness, heat resistance and recyclability is obtained, even if the blending amount of carbon nanotubes is small. | 2013-05-16 |
20130119321 | Graphene-Sulfur Compositions and Electrodes Made Therefrom - A method of making a composition, comprising: (1) oxidizing graphite to graphite oxide using at least one sulfur-containing reagent, (2) exfoliating the graphite oxide to form graphene sheets, and (3) blending the graphene sheets with elemental sulfur and/or at least one organosulfur compound, wherein the graphene sheets comprise at least about 1 weight percent sulfur. The composition may be made into an electrode that may be used in batteries, including lithium sulfur batteries. | 2013-05-16 |
20130119322 | CONDUCTIVE SINTERED LAYER FORMING COMPOSITION - There is provided a conductive sintered layer forming composition and a conductive sintered layer forming method that can lower heating temperature and shorten heating time for a process of accelerating sintering or bonding by sintering of metal nano-particles coated with an organic substance. The conductive sintered layer forming composition may be obtained by utilizing a phenomenon that particles may be sintered at low temperature by mixing silver oxide with metal particles coated with the organic substance and having a grain size of 1 nm to 5 μm as compared to sintering each simple substance. The conductive sintered layer forming composition of the invention is characterized in that it contains the metal particles whose surface is coated with the organic substance and whose grain size is 1 nm to 5 μm and the silver oxide particles. | 2013-05-16 |
20130119323 | CATHODE ACTIVE MATERIAL FOR SECONDARY BATTERY - Disclosed is a cathode active material for secondary batteries comprising, a compound having a transition metal layer containing lithium as at least one compound selected from the following Formula 1: Li(Li | 2013-05-16 |
20130119324 | OXIDE FOR SEMICONDUCTOR LAYER OF THIN-FILM TRANSISTOR, SPUTTERING TARGET, AND THIN-FILM TRANSISTOR - There is provided an oxide for semiconductor layers of thin-film transistors, which oxide can provide thin-film transistors with excellent switching characteristics and by which oxide favorable characteristics can stably be obtained even after the formation of passivation layers. The oxide to be used for semiconductor layers of thin-film transistors according to the present invention includes Zn, Sn, and Si. | 2013-05-16 |
20130119325 | CATHODE FOR SECONDARY BATTERY - Disclosed is a cathode for secondary batteries comprising a compound having a transition metal layer containing lithium as at least one compound selected from the following formula 1: (1−x)Li(Li | 2013-05-16 |
20130119326 | Low-Melting-Point Glass Composition and Conductive Paste Material Using Same - [Task] To provide a low-melting point glass composition for a lead-free conductive paste material with which a high collection efficiency can be obtained in a conductive paste for a crystalline Si solar battery. | 2013-05-16 |
20130119327 | Flame Retardant Foam Polystyrene Bead and Method for Manufacturing the Same - A flame retardant foam polystyrene bead comprises: (A) a mixed resin including (a1) about 90 wt % to about 99 wt % of a styrene resin and (a2) about 1 wt % to about 10 wt % of a char-generating thermoplastic resin; (B) inorganic foam particles dispersed in the mixed resin; and (C) a foaming agent impregnated into the mixed resin containing the dispersed inorganic foam particles. The foam produced using the flame retardant foam polystyrene bead can have good flame retardancy, insulation, and mechanical strength properties. | 2013-05-16 |
20130119328 | MULTI-SECTION PULLING ROD STRUCTURE - A multi-section pulling rod structure, comprising: a retractable pulling rod, a positioning piece, and a plug set. The retractable pulling rod includes a first socket, a second socket, and at least a third socket, sleeved and fixed onto each other through their ends of small diameters, with their bottom ends provided respectively with a first plug, a second plug, and at least a third plug. Positioning piece is disposed inside second socket, and a plurality of positioning holes are provided on positioning piece. A press rod controls action of first plug, and at the same time brings second plug and third plug into action, so as to make steel beads on each plug to position in or detach from holes of each socket, and control steel bead of second plug to position in one of selected positioning holes on positioning piece, hereby reaching the extended height with minute adjustments. | 2013-05-16 |
20130119329 | WINCH - A winch for a sailboat comprises a support for mounting the winch with respect to a sailboat, a winch drum rotatable with respect to the support, a ring gear fixed with respect to the winch drum, a main drive gear meshing with the ring gear for driving rotation of the winch drum, a manual drive spindle | 2013-05-16 |
20130119330 | WINCH - A winch for a sailboat comprises a support for mounting the winch with respect to a sailboat, a winch drum rotatable with respect to the support, a manual drive socket for receiving a crank handle for manual driving of the winch and a motor for powered driving of the winch. The winch provides at least two manual forward winding gearing ratios selectable according to the direction of rotation of the manual drive socket. Motor-operated forward and reverse winding can be provided. The winch can lock against reverse winding when the crank handle is located in the drive socket. Control means are provided for controlling the motor. The control means has two selectable on-off controls only, a forwards control being exclusively for controlling on-off motor-operated forward winding of the winch drum and a reverse control being exclusively for controlling on-off motor-operated reverse winding of the winch drum. | 2013-05-16 |
20130119331 | WINCH - A self-tailing arrangement for a winch comprises a rope guide channel defined by upper and lower guide rings which are rotatable with a drum and adapted to grip rope therein. A feeder arm guides rope between the drum and the rope guide channel and is fixed with respect to a support. A spring-mounted retainer guide guides rope between the rope guide channel and an unloaded end of the rope. The drum is rotatable with respect to the retainer guide. The retainer guide has a retainer lip extending partially circumferentially around the self-tailing assembly to at least partially enclose a portion of the rope guide channel. The retainer guide further defines at least one side of an opening adjacent the retainer lip, the opening being sized to conduct rope through the opening during reverse winding of the winch, the rope thereby being retained in the rope guide channel by the retainer lip. | 2013-05-16 |
20130119332 | COLLAPSIBLE HOISTING DEVICE FOR USE IN THE CONSTRUCTION OF LARGE METAL CONTAINERS, AND REMOVABLE ACCESSORY APPLICABLE THERETO - A collapsible hoisting device for use in the construction of large metal containers and to a removable accessory applicable thereto. It facilitates construction procedures by reducing project times and costs. The collapsible device includes a column ( | 2013-05-16 |
20130119333 | CHANGER ASSEMBLY AND PLAYARD WITH STOW-AWAY CHANGER - A changer assembly and a playard are disclosed. The changer assembly is adapted for installation on a skeleton of a playard and includes an attachment base and a changer frame. The attachment base includes a mount structure attached to the skeleton and a guiding structure connected to the mount structure and outwardly extended with respect to a circumferential side of the skeleton. The changer frame is rotatably and slidably connected to the guiding structure and detachably engaging with an upper side of the skeleton for being capable of moving from a first position above the upper side to a second position beside the circumferential side by disengaging from the upper side and rotating on and sliding along the guiding structure. Thereby, the playard equipped with the changer assembly needs no additional space outside the playard for storing the changer frame. | 2013-05-16 |
20130119334 | MARINE BARRIER AND GATE - A marine barrier has substantially vertical panels, each having a buoyant portion, and a plurality of hinges, each hinge for elastically connecting a side of a first one of the panels to a side of an adjacent second one of the panels with an included angle therebetween, to form a buoyant continuous pleated row of panels, with the hinges arranged in first and second substantially parallel rows. An impact cable is attached to opposing ends of the pleated row of panels passing through each of the hinges in the first row of hinges. When the barrier is floating in water and a moving vessel impacts the impact cable, the impact cable deflects to transfer a force of the impact to one or more of the panels, which in turn engage the water to transfer the force of the impact to the water, to arrest the motion of the vessel. | 2013-05-16 |
20130119335 | ARTICULATED BRACKET FOR FENCE - Disclosed is an articulated bracket for a fence. The articulated bracket which couples a pillar member and a horizontal member disposed between the pillar members, includes a first articulated part which is coupled with the pillar member and formed with an internal space communicated with an outside; and a second articulated part formed with a center portion disposed in the internal space of the first articulated part and a connection portion fastened to the horizontal member, wherein the connection portion is pivoted on the center portion. | 2013-05-16 |
20130119336 | Forced Ion Migration for Chalcogenide Phase Change Memory Device - Non-volatile memory devices with two stacked layers of chalcogenide materials comprising the active memory device have been investigated for their potential as phase-change memories. The devices tested included GeTe/SnTe, Ge | 2013-05-16 |
20130119337 | RESISTIVE-SWITCHING DEVICE CAPABLE OF IMPLEMENTING MULTIARY ADDITION OPERATION AND METHOD FOR MULTIARY ADDITION OPERATION - A resistive-switching random access memory device includes a memory cell disposed between a bit line and a word line, the memory cell having a resistive-switching element ( | 2013-05-16 |
20130119338 | RESISTANCE-SWITCHING MEMORY CELLS ADAPTED FOR USE AT LOW VOLTAGE - A memory cell is provided that includes a diode and a resistance-switching material layer coupled in series with the diode. The resistance-switching material layer: (a) includes a material from the family consisting of XvOw, wherein X represents an element from the family consisting of Hf and Zr, and wherein the subscripts v and w have non-zero values that form a stable compound, and (b) has a thickness between 20 and 65 angstroms. Other aspects are also provided. | 2013-05-16 |
20130119339 | MEMORY CELL WITH POST DEPOSITION METHOD FOR REGROWTH OF CRYSTALLINE PHASE CHANGE MATERIAL - A phase change memory cell with substantially void free crystalline phase change material. An example memory cell includes a substrate and a bottom electrode carried by the substrate. The bottom electrode is a thermal conductor. A phase change layer includes phase change material. The phase change layer is void free within a switching region when the phase change material is in a crystalline phase. A top electrode is positioned over the phase change layer. | 2013-05-16 |
20130119340 | MULTI-BIT RESISTIVE-SWITCHING MEMORY CELL AND ARRAY - This invention proposes a multi-bit resistive-switching memory cell and array thereof. Multiple conduction paths are formed on each memory cell and independent of each other, and each conduction path can be in a high-resistance or low-resistance state, so as to form a multi-bit resistive-switching memory cell. A memory cell array can be formed by arranging a plurality of multi-bit resistive-switching memory cells, and the memory cell array provides a simple, high density, high performance and cost-efficient proposal. | 2013-05-16 |
20130119341 | RESISTIVE RANDOM ACCESS MEMORY CELL AND MEMORY - A Resistive Random Access Memory (RRAM) cell and a memory are disclosed. In one embodiment, the RRAM cell comprises a two-state resistor and a resistive switching memory cell connected in series. The two-state resistor can supply relatively large currents under both positive and negative voltage polarities. As a result, it is possible to reduce leakage paths in a crossbar array of memory cells, and thus to suppress reading crosstalk. | 2013-05-16 |
20130119342 | METHOD FOR MANUFACTURING SEMICONDUCTOR MEMORY DEVICE AND SEMICONDUCTOR MEMORY DEVICE - According to one embodiment, a method is disclosed for manufacturing a semiconductor memory device. The method can include introducing halogen in a contact layer with a resistance variation film including a metal oxide. The method can include diffusing the halogen from the contact layer to the resistance variation film by a thermal treatment. | 2013-05-16 |
20130119343 | RESISTIVE RANDOM ACCESS MEMORY AND METHOD FOR FABRICATING THE SAME - A resistive random access memory and a method for fabricating the same are provided. The method includes forming a bottom electrode on a substrate; forming a metal oxide layer on the bottom electrode; forming an oxygen atom gettering layer on the metal oxide layer; forming a first top electrode sub-layer on the oxygen atom gettering layer; forming a second top electrode sub-layer on the first top electrode sub-layer, wherein the first top electrode sub-layer and the second top electrode sub-layer comprise a top electrode; and subjecting the metal oxide layer and the oxygen atom gettering layer to a thermal treatment, driving the oxygen atoms of the metal oxide layer to migrate into and react with the oxygen atom gettering layer, resulting in a plurality of oxygen vacancies within the metal oxide layer. | 2013-05-16 |
20130119344 | NONVOLATILE STORAGE ELEMENT AND METHOD FOR MANUFACTURING SAME - A variable resistance nonvolatile storage element includes: a first electrode; a second electrode; and a variable resistance layer having a resistance value that reversibly changes based on an electrical signal applied between the electrodes, wherein the variable resistance layer has a structure formed by stacking a first transition metal oxide layer, a second transition metal oxide layer, and a third transition metal oxide layer in this order, the first transition metal oxide layer having a composition expressed as MO | 2013-05-16 |
20130119345 | THIN FILM TRANSISTOR AND A DISPLAY DEVICE INCLUDING THE SAME - A thin film transistor includes a gate electrode configured to receive a control voltage, a source electrode insulated from the gate electrode, and configured to receive an input voltage, a drain electrode insulated from the gate electrode, and configured to receive an output voltage, at least two carbon nanotube patterns formed in a channel region between the source electrode and the drain electrode, wherein the carbon nanotube patterns are separated from each other, and at least one floating electrode connecting the two carbon nanotube patterns to each other. | 2013-05-16 |
20130119346 | IRON PYRITE NANOCRYSTALS - An apparatus includes a nanocrystal. The nanocrystal includes a core including FeS | 2013-05-16 |
20130119347 | SEMICONDUCTOR DEVICE INCLUDING GROUP III-V BARRIER AND METHOD OF MANUFACTURING THE SEMICONDUCTOR DEVICE - A semiconductor device including a group III-V barrier and a method of manufacturing the semiconductor device, the semiconductor device including: a substrate, insulation layers formed to be spaced apart on the substrate, a group III-V material layer for filling the space between the insulation layers and having a portion protruding higher than the insulation layers, a barrier layer for covering the side and upper surfaces of the protruding portion of the group III-V material layer and having a bandgap larger than that of the group III-V material layer, a gate insulation film for covering the surface of the barrier layer, a gate electrode formed on the gate insulation film, and source and drain electrodes formed apart from the gate electrode. The overall composition of the group III-V material layer is uniform. The barrier layer may include a group III-V material for forming a quantum well. | 2013-05-16 |
20130119348 | Radio Frequency Devices Based on Carbon Nanomaterials - RF transistors are fabricated at complete wafer scale using a nanotube deposition technique capable of forming high-density, uniform semiconducting nanotube thin films at complete wafer scale, and electrical characterization reveals that such devices exhibit gigahertz operation, linearity, and large transconductance and current drive. | 2013-05-16 |
20130119349 | GRAPHENE TRANSISTOR HAVING AIR GAP, HYBRID TRANSISTOR HAVING THE SAME, AND METHODS OF FABRICATING THE SAME - A graphene transistor includes: a gate electrode on a substrate; a gate insulating layer on the gate electrode; a graphene channel on the gate insulating layer; a source electrode and a drain electrode on the graphene channel, the source and drain electrode being separate from each other; and a cover that covers upper surfaces of the source electrode and the drain electrode and forms an air gap above the graphene channel between the source electrode and the drain electrode. | 2013-05-16 |
20130119350 | SEMICONDUCTOR STRUCTURE AND CIRCUIT INCLUDING ORDERED ARRANGEMENT OF GRAPHENE NANORIBBONS, AND METHODS OF FORMING SAME - A semiconductor structure including an ordered array of parallel graphene nanoribbons located on a surface of a semiconductor substrate is provided using a deterministically assembled parallel set of nanowires as an etch mask. The deterministically assembled parallel set of nanowires is formed across a gap present in a patterned graphene layer utilizing an electric field assisted assembly process. A semiconductor device, such as a field effect transistor, can be formed on the ordered array of parallel graphene nanoribbons. | 2013-05-16 |
20130119351 | QUANTUM BITS AND METHOD OF FORMING THE SAME - Methods are provided of forming a Josephson junction (JJ) quantum bit (qubit). In one embodiment, the method comprises forming a JJ trilayer on a substrate. The JJ trilayer is comprised of a dielectric layer sandwiched between a bottom superconductor material layer and a top superconductor material layer. The method further comprises performing a thermal hardening process on the JJ trilayer to control diffusion of the dielectric layer into the bottom superconductor material layer and the top superconductor material layer, and etching openings in the JJ trilayer to form one or more JJ qubits. | 2013-05-16 |
20130119352 | MULTI-STRUCTURE CATHODE FOR FLEXIBLE ORGANIC LIGHT EMITTING DIODE (OLED) DEVICE AND METHOD OF MAKING SAME - Described is a method for making a flexible OLED lighting device. The method includes forming a plurality of OLED elements on a flexible planar substrate, each of the OLED elements including a continuous respective anode layer formed over the substrate. One or more organic light emitting materials is formed over the anode layer; a continuous cathode layer having a first thickness is formed over the light emitting materials; and a discontinuous cathode layer having a second thickness is formed over the continuous cathode layer. An encapsulating protective cover may be formed over the cathode layers. Each of the OLED elements defines a bendable, continuous light region on the substrate, wherein the substrate and combination of OLED elements define an OLED device that more effectively dissipates heat and has an active light area that is bendable. | 2013-05-16 |
20130119353 | TRIPHENYLENE SILANE HOSTS - Novel aryl silicon and aryl germanium host materials, and in particular host materials containing triphenylene and pyrene fragments, are described. These compounds improve OLED device performance when used as hosts in the emissive layer of the OLED. | 2013-05-16 |
20130119354 | HETEROLEPTIC IRIDIUM COMPLEX - Novel phosphorescent heteroleptic iridium complexes with phenylpyridine and dibenzo-containing ligands are provided. The disclosed compounds have low sublimation temperatures that allow for ease of purification and fabrication into a variety of OLED devices. | 2013-05-16 |
20130119355 | STYRYL-BASED COMPOUND, COMPOSITION CONTAINING STYRYL-BASED COMPOUND, AND ORGANIC LIGHT EMITTING DIODE INCLUDING STYRYL-BASED COMPOUND - A styryl-based compound represented by Formula 1, a composition containing the styryl-based compound, and an organic light-emitting diode (OLED) including the styryl-based compound: | 2013-05-16 |
20130119356 | OPAL GLASSES FOR LIGHT EXTRACTION - Opal glass compositions and devices incorporating opal glass compositions are described herein. The compositions solve problems associated with the use of opal glasses as light-scattering layers in electroluminescent devices, such as organic light-emitting diodes. In particular, embodiments solve the problem of high light absorption within the opal glass layer as well as the problem of an insufficiently high refractive index that results in poor light collection by the layer. Particular devices comprise light-emitting diodes incorporating light scattering layers formed of high-index opal glasses of high light scattering power that exhibit minimal light attenuation through light absorption within the matrix phases of the glasses. | 2013-05-16 |
20130119357 | White Organic Light Emitting Device and Display Device Using the Same - A white organic light emitting device, with improved color shift characteristics and improved efficiency according to viewing angle changes by controlling conditions for designing an optical path in organic material layers between a cathode and an anode or adjusting interior or exterior thicknesses of the organic material layers, has a structure including a first electrode and layers between the first electrode and a second electrode satisfies an optical path condition represented by the following equation | 2013-05-16 |
20130119358 | Light-Emitting Device, Electronic Device, and Lighting Device - Provided is a light-emitting device having a light-emitting portion having a light-emitting element in a space surrounded by a support substrate, a metal substrate, and a sealing material, in which the sealing material is provided to surround the periphery of the light-emitting portion, the light-emitting element has a first electrode, a layer having a light-emitting organic compound, and a second electrode, the support substrate and the first electrode are each capable of transmitting light emitted from the light-emitting organic compound, and the space contains gas inert to the light-emitting element or is in a vacuum. The light-emitting device has, over the second electrode, a first high-emissivity layer that has higher emissivity than the second electrode and is thermally connected to the second electrode, and a low-reflectivity layer with which a metal substrate surface facing the support substrate is provided and which has lower reflectivity than the metal substrate. | 2013-05-16 |
20130119359 | Organic Electroluminescent Element, Material for Organic Electroluminescent Element, and Light Emitting Device, Display Device and Illumination Device Each Using the Element - The disclosure relates to organic electroluminescent elements, materials for use in the elements, and devices using the elements, which include a compound represented by the following General Formula (1): | 2013-05-16 |
20130119360 | ORGANIC ELECTROLUMINESCENCE ELEMENT, NEW COMPOUND FOR THE SAME, DISPLAY DEVICE AND LIGHTING DEVICE USING THE SAME - Disclosed is an organic electroluminescence element comprising an anode, a cathode and a plurality of organic compound layers between the anode and the cathode, provided that one of the organic compound layers is a light emitting layer containing a phosphorescence emitting compound,
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20130119361 | PHENYL AND FLUORENYL SUBSTITUTED PHENYL-PYRAZOLE COMPLEXES OF Ir - The invention provides emissive materials and organic light emitting devices using the emissive materials in an emissive layer disposed between and electrically connected to an anode and a cathode. The emissive materials include compounds with the following structure: | 2013-05-16 |
20130119362 | ORGANIC LIGHT EMITTING DIODE DISPLAY - An organic light emitting diode (OLED) display. The OLED display includes a first substrate member, a first conductive wire having a contact region and formed over the first substrate member, an insulating layer including a plurality of wire contact holes exposing a part of the contact region of the first conductive wire and formed over the first conductive wire, a second conductive wire formed over the first conductive wire and connected to the first conductive wire through the plurality of wire contact holes of the insulating layer, a sealant formed over the second conductive wire, a sealing member formed over the sealant, and a fill-up layer disposed above or under the contact region of the first conductive wire. | 2013-05-16 |
20130119363 | FLUORINE-CONTAINING AROMATIC COMPOUND, ORGANIC SEMICONDUCTOR MATERIAL AND ORGANIC THIN FILM DEVICE - A fluorine-containing aromatic compound represented by a formula: Q(W—Ar | 2013-05-16 |
20130119364 | DEPOSITION APPARATUS AND DEPOSITION METHOD - A light-emitting device includes a transistor over a substrate and an insulating film over the transistor. The light-emitting device further includes a wiring over the insulating film and a light-emitting element. The insulating film includes a first opening and a second opening, and the wiring is electrically connected to the transistor through the first opening. The light-emitting element is provided in the second opening, and includes a first electrode, a second electrode, and an organic compound layer provided between the first electrode and the second electrode. | 2013-05-16 |
20130119365 | COMPOSITE MATERIAL, LIGHT EMITTING ELEMENT AND LIGHT EMITTING DEVICE - An object of the present invention is to provide a composite material formed of an organic compound and an inorganic compound, and has an excellent carrier transporting property, an excellent carrier injecting property to the organic compound, as well as excellent transparency. A composite material of the present invention for achieving the above object is a composite material of an organic compound represented in the general formula below, and an inorganic compound. For the inorganic compound, an oxide of a transition metal, preferably an oxide of a metal belonging to groups 4 to 8 of the periodic table, in particular vanadium oxide, tantalum oxide, molybdenum oxide, tungsten oxide, rhenium oxide, and ruthenium oxide, can be used. | 2013-05-16 |
20130119366 | ORGANIC EL ELEMENT, DISPLAY DEVICE, AND LIGHT-EMITTING DEVICE - The present invention aims to provide organic EL elements operating at low voltage to emit light at high intensity. For this aim, each EL element includes an anode, a cathode, a functional layer disposed between the anode and the cathode and including a light-emitting layer composed of organic material, a hole injection layer disposed between the anode and the functional layer, and a bank defining the light-emitting layer. The hole injection layer contains tungsten oxide and exhibits: by UPS measurement, a UPS spectrum having a protrusion appearing near a Fermi surface and within a region corresponding to a binding energy range lower than the top of a valence band; and by XPS measurement, that the tungsten oxide in the hole injection layer satisfies a condition that a ratio in number density of atoms other than tungsten atoms and oxygen atoms to the tungsten atoms is equal to 0.83 or smaller. | 2013-05-16 |
20130119367 | HIGHLY EFFICIENT CARBAZOLE-BASED COMPOUND, AND ORGANIC ELECTROLUMINESCENCE DEVICE COMPRISING SAME - The present invention relates to a highly efficient carbazole-based compound and to an organic electroluminescence device including the same. According to the present invention, provided are a compound for an organic electroluminescence device and an organic electroluminescence device including the compound, in which a carbazole-based phosphine oxide compound, which is a compound intended for an organic electroluminescence device, is employed to overcome the problems of conventional compounds for organic electroluminescence devices, i.e. those of instable thermal stability and low efficiency, and particularly, the compound of the present invention exhibits superior efficiency in pure-blue phosphorescent devices. | 2013-05-16 |
20130119368 | ORGANIC EL DEVICE - An organic EL device includes a first substrate having electrical conductivity, an organic layer formed on the first substrate, an electrode layer formed on the organic layer, and a second substrate joined to the electrode layer by an adhesive layer. In a region of a peripheral portion of the first substrate, the organic layer is not formed, and a portion of the electrode layer is provided on the first substrate through an insulating layer so as to extend to an outer peripheral side of a region where the organic layer is present. The extended electrode layer is folded back together with the insulating layer to a side opposite to the second substrate, to constitute an electrode taking-out portion. | 2013-05-16 |
20130119369 | LAYERED STRUCTURE, ELECTRONIC DEVICE USING SAME, AROMATIC COMPOUND, AND METHOD FOR MANUFACTURING SAID COMPOUND - The present invention provides: a layered structure having a substrate and a hole injection and/or hole transport layer comprising an aromatic compound having, on a side chain, at least one type of group having a cationic center; | 2013-05-16 |
20130119370 | STRAINED STRUCTURES OF SEMICONDUCTOR DEVICES - A strained structure of a semiconductor device is disclosed. An exemplary structure for a semiconductor device comprises a substrate comprising a major surface; a gate stack on the major surface of the substrate; a shallow trench isolation (STI) disposed on one side of the gate stack, wherein the STI is within the substrate; and a cavity filled with a strained structure distributed between the gate stack and the STI, wherein the cavity comprises one sidewall formed by the STI, one sidewall formed by the substrate, and a bottom surface formed by the substrate, wherein the strained structure comprises a SiGe layer and a first strained film adjoining the sidewall of the STI. | 2013-05-16 |
20130119371 | ACTIVE DEVICE - An active device including a source, a drain, an oxide semiconductor layer, a gate and a gate insulator layer is provided. The source includes first stripe electrodes parallel to each other and a first connection electrode connected thereto. The drain includes second stripe electrodes parallel to each other and a second connection electrode connected thereto, wherein the first stripe electrodes and the second stripe electrodes are parallel to each other, electrically isolated, and alternately arranged, and a zigzag trench is formed therebetween. The gate extends along the zigzag trench. The oxide semiconductor layer is in contact with the source and drain, wherein a contact area among the oxide semiconductor layer and each first stripe electrodes substantially equals to a layout area of each first stripe electrodes and a contact area among each second stripe electrodes substantially equals to a layout area of each second stripe electrodes. | 2013-05-16 |
20130119372 | LIGHT SENSING DEVICE - A light sensing device is disclosed. The light sensing device includes a first light sensor and a second light sensor. The first light sensor formed on a substrate includes a first metal oxide semiconductor layer for absorbing a first light having a first waveband. The second light sensor formed on the substrate includes a second metal oxide semiconductor layer and an organic light-sensitive layer on the second metal oxide semiconductor layer for absorbing a second light having a second waveband. | 2013-05-16 |
20130119373 | SEMICONDUCTOR DEVICE - A highly reliable semiconductor device is provided. Over an oxide semiconductor layer in which a channel is formed, an insulating layer including the oxide semiconductor material having a higher insulating property than an oxide semiconductor layer is formed. A material which contains an element M and is represented by a chemical formula InMZnO | 2013-05-16 |
20130119374 | PHOTOELECTRIC CONVERSION DEVICE - To provide a photoelectric conversion device which has little light loss caused by light absorption in a window layer and has favorable electric characteristics. The photoelectric conversion device includes, between a pair of electrodes, a light-transmitting semiconductor layer which has one conductivity type and serves as a window layer, and a silicon semiconductor substrate having a conductivity type for forming a p-n junction or a silicon semiconductor layer having a conductivity type for forming a p-i-n junction. The light-transmitting semiconductor layer can be formed using an inorganic compound containing, as its main component, an oxide of a metal belonging to any of Groups 4 to 8 of the periodic table. The band gap of the metal oxide is greater than or equal to 2 eV. | 2013-05-16 |
20130119375 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE - Provided is a miniaturized transistor having high electrical characteristics. The transistor includes a source electrode layer in contact with one side surface of the oxide semiconductor layer in the channel-length direction and a drain electrode layer in contact with the other side surface thereof. The transistor further includes a gate electrode layer in a region overlapping with a channel formation region with a gate insulating layer provided therebetween and a conductive layer having a function as part of the gate electrode layer in a region overlapping with the source electrode layer or the drain electrode layer with the gate insulating layer provided therebetween and in contact with a side surface of the gate electrode layer. With such a structure, an Lov region is formed with a scaled-down channel length maintained. | 2013-05-16 |
20130119376 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF - To provide a highly reliable semiconductor device including a transistor using an oxide semiconductor. After a source electrode layer and a drain electrode layer are formed, an island-like oxide semiconductor layer is formed in a gap between these electrode layers so that a side surface of the oxide semiconductor layer is covered with a wiring, whereby light is prevented from entering the oxide semiconductor layer through the side surface. Further, a gate electrode layer is formed over the oxide semiconductor layer with a gate insulating layer interposed therebetween and impurities are introduced with the gate electrode layer used as a mask. Then, a conductive layer is provided on a side surface of the gate electrode layer in the channel length direction, whereby an Lov region is formed while maintaining a scaled-down channel length and entry of light from above into the oxide semiconductor layer is prevented. | 2013-05-16 |
20130119377 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE - By reducing the contact resistance between an oxide semiconductor film and a metal film, a transistor that uses an oxide semiconductor film and has excellent on-state characteristics is provided. A semiconductor device includes a pair of electrodes over an insulating surface; an oxide semiconductor film in contact with the pair of electrodes; a gate insulating film over the oxide semiconductor film; and a gate electrode overlapping with the oxide semiconductor film with the gate insulating film interposed therebetween. In the semiconductor device, the pair of electrodes contains a halogen element in a region in contact with the oxide semiconductor film. Further, plasma treatment in an atmosphere containing fluorine can be performed so that the pair of electrodes contains the halogen element in a region in contact with the oxide semiconductor film. | 2013-05-16 |
20130119378 | SEMICONDUCTOR DEVICE - The semiconductor device includes a power element which is in an on state when voltage is not applied to a gate, a switching field-effect transistor for applying first voltage to the gate of the power element, and a switching field-effect transistor for applying voltage lower than the first voltage to the gate of the power element. The switching field-effect transistors have small off-state current. | 2013-05-16 |
20130119379 | Light Emitting Device - It is an object of the present invention to provide a light-emitting device in which, even when a material with high reflectivity such as aluminum is used for an electrode, a layer containing oxygen can be formed over the electrode without increasing contact resistance and a manufacturing method thereof. According to the present invention, a feature thereof is a light-emitting element having an electrode composed of a stacked structure where a conductive film having high reflectivity such as aluminum, silver, and an alloy containing aluminum or an alloy containing silver, and a conductive film composed of a refractory metal material is provided over the conductive film, or a light-emitting device having the light-emitting element. | 2013-05-16 |
20130119380 | SEMICONDUCTOR DEVICE - A solid-state image sensor which holds a potential for a long time and includes a thin film transistor with stable electrical characteristics is provided. When the off-state current of a thin film transistor including an oxide semiconductor layer is set to 1×10 | 2013-05-16 |
20130119381 | ULTRAVIOLET LIGHT EMITTING MATERIAL, METHOD FOR PRODUCING SAME, AND LIGHT EMITTING ELEMENT USING SAME - The present invention provides a zinc oxide-based ultraviolet light emitting material showing intense emission in the ultraviolet region. The present invention is an ultraviolet light emitting material containing: zinc and oxygen as main components; at least one element selected from the group consisting of aluminum, gallium, and indium, as a first sub-component; and phosphorus as a second sub-component. This material has n-type conductivity. | 2013-05-16 |
20130119382 | Plating Process and Structure - A system and method for plating a contact is provided. An embodiment comprises forming protective layers over a contact and a test pad, and then selectively removing the protective layer over the contact without removing the protective layer over the test pad. With the protective layer still on the test pad, a conductive layer may be plated onto the contact without plating it onto the test pad. After the contact has been plated, the protective layer over the contact may be removed. | 2013-05-16 |
20130119383 | SEMICONDUCTOR DEVICE AND ELECTRONIC UNIT - Thin-film transistors and techniques for forming thin-film transistors (TFT). In some embodiments, there is provided a method of forming a TFT, comprising forming a body region of the TFT comprising an organic semiconducting material, and forming a protective layer comprising an organic insulating material. Forming the protective layer comprises contacting the body region of the TFT with a solution comprising the organic insulating material. The organic insulating material is a material that phase separates with the organic semiconducting material when the solution contacts the organic semiconducting material. In other embodiments, there is provided an apparatus comprising a TFT. The TFT comprises a body region comprising an organic semiconducting material and a protective layer contacting the body region and comprising an organic insulating material that, when a solution comprising the organic insulating material contacts the organic semiconducting material, causes the organic insulating material to phase separate with the organic semiconducting material. | 2013-05-16 |
20130119384 | PARASITIC LATERAL PNP TRANSISTOR AND MANUFACTURING METHOD THEREOF - A parasitic lateral PNP transistor is disclosed, in which, an N-type implanted region formed in each of two adjacent active regions forms a base region; a P-type doped polysilicon pseudo buried layer located under a shallow trench field oxide region between the two active regions serves as an emitter; and a P-type doped polysilicon pseudo buried layer located under each of the shallow trench field oxide regions on the outer side of the active regions serves as a collector region. The transistor has a C-B-E-B-C structure which alters the current path in the base region to a straight line, which can improve the current amplification capacity of the transistor and thus leads to a significant improvement of its current gain and frequency characteristics, and is further capable of reducing the area and increasing current intensity of the transistor. A manufacturing method of the parasitic lateral PNP transistor is also disclosed. | 2013-05-16 |
20130119385 | PIXEL STRUCTURE AND METHOD OF FABRICATING THE SAME - A pixel structure includes a substrate; a scan line; a gate electrode; an insulating layer disposed on the scan line, the gate electrode and the substrate; a channel and a data line disposed on the insulating layer; a source electrode and a drain electrode disposed on the channel; a passivation layer; a pixel electrode and a connecting electrode. The data line does not overlap the scan line. The passivation layer disposed on the source electrode and the drain electrode includes a first contact hole partially exposing the drain electrode, and a plurality of second contact holes partially exposing the data line or the scan line. The pixel electrode disposed on the passivation layer is electrically connected to the drain electrode through the first contact hole. Furthermore, the connecting electrode disposed on the passivation layer is electrically connected to the data line or the scan line through the second contact holes. | 2013-05-16 |
20130119386 | PIXEL STRUCTURE AND FABRICATION METHOD OF PIXEL STRUCTURE - A pixel structure and its fabrication method are provided. The pixel structure includes a channel layer, a first patterned metal layer, a first insulation layer, a second patterned metal layer, a second insulation layer, and a pixel electrode. The first patterned metal layer includes a data line, a source, and a drain. The first insulation layer has a first opening exposing the drain. The second patterned metal layer includes a scan line and a capacitor electrode. The capacitor electrode has at least one first portion overlapping the data line. The second insulation layer has a second opening communicating with the first opening to expose the drain. The pixel electrode is connected to the drain through the first opening and the second opening and at least overlaps the first portion of the capacitor electrode. | 2013-05-16 |
20130119387 | Organic Light-emitting Display Apparatus and Method of Manufacturing the Same - An organic light-emitting display apparatus includes: a substrate including an emission region and a non-emission region and having a recess formed in at least a portion of the non-emission region; a black matrix disposed in the recess; a thin film transistor disposed on the non-emission region of the substrate and including an active layer, a gate electrode, and source and drain electrodes; a pixel electrode disposed on the emission region of the substrate and electrically connected to one of the source and drain electrodes; an organic emission layer disposed on the pixel electrode; and an opposite electrode disposed on the organic emission layer. | 2013-05-16 |
20130119388 | ORGANIC LIGHT-EMITTING DISPLAY DEVICE AND METHOD OF MANUFACTURING THE SAME - An OLED device includes: a TFT including an active layer, gate, source and drain electrodes, a first insulating layer between the active layer and the gate electrode, and a second insulating layer between the source and drain electrodes, a pixel electrode on the first and second insulating layers, connected to one of the source and drain electrodes, a capacitor including a first electrode on the same layer as the active layer, a second electrode on the same layer as the gate electrode, and a third electrode formed of the same material as the pixel electrode, a third insulating layer between the second insulating layer and the pixel electrode and between the second and third electrodes, a fourth insulating layer covering the source, drain and third electrodes, exposing a portion of the pixel electrode, an organic light-emitting layer on the pixel electrode, and a counter electrode on the organic light-emitting layer. | 2013-05-16 |
20130119389 | Semiconductor Device and Method of Manufacturing Same - A FET is formed on a semiconductor substrate, a curved surface having a radius of curvature is formed on an upper end of an insulation, a portion of a first electrode is exposed corresponding to the curved surface to form an inclined surface, and a region defining a luminescent region is subjected to etching to expose the first electrode. Luminescence emitted from an organic chemical compound layer is reflected by the inclined surface of the first electrode to increase a total quantity of luminescence taken out in a certain direction. | 2013-05-16 |
20130119390 | THIN FILM TRANSISTOR SUBSTRATE - A thin film transistor substrate including a thin film transistor having a drain electrode with an electrode portion, which overlaps with a semiconductor layer, and an extended portion, which extends from the electrode portion and has a portion overlapping with a storage electrode or storage electrode line. A passivation layer is arranged on the drain electrode, and it has a contact hole that partially exposes the extended portion of the drain electrode without exposing a step in the extended portion caused by the storage electrode or storage electrode line. A pixel electrode is arranged on the passivation layer and is electrically connected with the extended portion of the drain electrode through the contact hole. | 2013-05-16 |
20130119391 | THIN-FILM TRANSISTOR DEVICE AND METHOD FOR MANUFACTURING THIN-FILM TRANSISTOR DEVICE - A thin-film transistor device includes: a gate electrode above a substrate; a gate insulating film on the gate electrode; a crystalline silicon thin film including a channel region which is provided on the gate insulating film; semiconductor films on at least the channel region; an insulating film made of an organic material which is provided over the channel region and above the semiconductor films; a source electrode over at least an end portion of the insulating film; and a drain electrode over at least the other end portion of the insulating film and facing the source electrode. The semiconductor films include at least a first semiconductor film and a second semiconductor film provided on the first semiconductor film. A relationship E | 2013-05-16 |
20130119392 | ORGANIC LIGHT-EMITTING DISPLAY DEVICE AND METHOD OF MANUFACTURING THE SAME - An organic light-emitting display device having a thin film transistor including an active layer, a gate electrode, a lower gate electrode, an upper gate electrode, an insulating layer covering the gate electrode, source and drain electrodes that are formed on the insulating layer and contact the active layer. An organic light-emitting diode is electrically connected to the thin film transistor and includes a pixel electrode formed at the same layer level as the lower gate electrode, an intermediate layer including an emission layer, and a counter electrode. A lower pad electrode is formed at the same layer level as the lower gate electrode and an upper pad electrode is formed at the same layer level as the upper gate electrode. | 2013-05-16 |
20130119393 | Vertical Gallium Nitride Schottky Diode - A vertical conduction nitride-based Schottky diode is formed using an insulating substrate which was lifted off after the diode device is encapsulated on the front side with a wafer level molding compound. The wafer level molding compound provides structural support on the front side of the diode device to allow the insulating substrate to be lifted off so that a conductive layer can be formed on the backside of the diode device as the cathode electrode. A vertical conduction nitride-based Schottky diode is thus realized. In another embodiment, a protection circuit for a vertical GaN Schottky diode employs a silicon-based vertical PN junction diode connected in parallel to the GaN Schottky diode to divert reverse bias avalanche current. | 2013-05-16 |
20130119394 | Termination Structure for Gallium Nitride Schottky Diode - A termination structure for a nitride-based Schottky diode includes a guard ring formed by an epitaxially grown P-type nitride-based compound semiconductor layer and dielectric field plates formed on the guard ring. The termination structure is formed at the edge of the anode electrode of the Schottky diode and has the effect of reducing electric field crowding at the anode electrode edge, especially when the Schottky diode is reverse biased. In one embodiment, the P-type epitaxial layer includes a step recess to further enhance the field spreading effect of the termination structure. | 2013-05-16 |
20130119395 | Tunnel FET and Methods for Forming the Same - A tunnel field-effect transistor (TFET) includes a gate electrode, a source region, and a drain region. The source and drain regions are of opposite conductivity types. A channel region is disposed between the source region and the drain region. A source diffusion barrier is disposed between the channel region and the source region. The source diffusion barrier and the source region are under and overlapping the gate electrode. The source diffusion barrier has a first bandgap greater than second bandgaps of the source region, the drain region, and the channel region. | 2013-05-16 |
20130119396 | TWO-TERMINAL SWITCHING DEVICES AND THEIR METHODS OF FABRICATION - Two-terminal switching devices characterized by high on/off current ratios and by high breakdown voltage are provided. These devices can be employed as switches in the driving circuits of active matrix displays, e.g., in electrophoretic, rotating element and liquid crystal displays. The switching devices include two electrodes, and a layer of a broad band semiconducting material residing between the electrodes. According to one example, the cathode comprises a metal having a low work function, the anode comprises an organic material having a p+ or p++ type of conductivity, and the broad band semiconductor comprises a metal oxide. The work function difference between the cathode and the anode material is preferably at least about 0.6 eV. The on/off current ratios of at least 10,000 over a voltage range of about 15 V can be achieved. The devices can be formed, if desired, on flexible polymeric substrates having low melting points. | 2013-05-16 |
20130119397 | NITRIDE-BASED HETEROJUCTION SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACUTRING THE SAME - Disclosed is a semiconductor device. More specifically, disclosed are a nitride-based heterojunction semiconductor device and a method for manufacturing the same. The nitride-based heterojunction semiconductor device includes a first drain electrode, a conductive semiconductor layer including a nitride-based semiconductor disposed on the first drain electrode, a channel layer disposed on the conductive semiconductor layer, a barrier layer disposed on the channel layer, a source electrode and a second drain electrode spaced from each other on the barrier layer, and a gate electrode disposed between the source electrode and the second drain electrode. | 2013-05-16 |
20130119398 | NITRIDE-BASED SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME - A nitride-based semiconductor light-emitting device | 2013-05-16 |
20130119399 | METHOD FOR TESTING GROUP III-NITRIDE WAFERS AND GROUP III-NITRIDE WAFERS WITH TEST DATA - The present invention discloses a new testing method of group III-nitride wafers. By utilizing the ammonothermal method, GaN or other Group III-nitride wafers can be obtained by slicing the bulk GaN ingots. Since these wafers originate from the same ingot, these wafers have similar properties/qualities. Therefore, properties of wafers sliced from an ingot can be estimated from measurement data obtained from selected number of wafers sliced from the same ingot or an ingot before slicing. These estimated properties can be used for product certificate of untested wafers. This scheme can reduce a significant amount of time, labor and cost related to quality control. | 2013-05-16 |