20th week of 2011 patent applcation highlights part 42 |
Patent application number | Title | Published |
20110117625 | Engineered Nucleases and Their Uses for Nucleic Acid Assembly - Aspects of the invention provide engineered endonucleases that are characterized by both a long recognition sequence and specific cleavage outside of the recognition site. Engineered endonucleases of the invention are useful for manipulating long pieces of DNA. | 2011-05-19 |
20110117626 | Hydrophobic Interaction Chromatography Membranes, and Methods of Use Thereof - Described herein are composite materials and methods of using them for hydrophobic interaction chromatography (HIC). In certain embodiments, the composite material comprises a support member, comprising a plurality of pores extending through the support member; and a macroporous cross-linked gel, comprising a plurality of macropores, and a plurality of pendant hydrophobic moieties. In certain embodiments, the composite materials may be used in the separation or purification of a biological molecule or biological ion. | 2011-05-19 |
20110117627 | REGULATION OF APOPTOSIS BY NEURAL SPECIFIC SPLICE VARIANTS OF IG20 - Pro-apoptotic signaling caused by down-modulation of KIAA0358 or expression of IG20-SV4 effectively induces spontaneous apoptosis and sensitization to TNFα-induced apoptosis in neuroblastoma cells. Methods and composition to enhance cell death in neuroblastoma are provided. Methods and compositions to reduce cell death in neurodegenerative disorders are provided. | 2011-05-19 |
20110117628 | METHOD FOR CONCENTRATING AND ISOLATING BIOMOLECULES OR VIRUSES - A simple and convenient method for concentrating a biomolecule, including protein or nucleic acid molecules, from a sample. Purified and isolated biomolecules obtained by this method. Methods for improving the specificity or sensitivity of detecting a biomolecule by concentration and/or purification or isolation of the biomolecule according to the method of the invention. | 2011-05-19 |
20110117629 | LACTOBACILLUS PLANTARUM BB9 CAPABLE OF ADHERING TO GASTROINTESTINAL TRACT AND CHOLESTEROL REMOVAL | 2011-05-19 |
20110117630 | Method for Producing Extracellular Multi-Enzyme Complexes in Host Cells - A polycistronic expression cassette encoding proteins necessary for constructing a multi-enzyme complex was developed. Also disclosed herein is a host cell containing this polycistronic expression cassette and uses thereof in degrading biomass. | 2011-05-19 |
20110117631 | PHOTO BIOREACTOR WITH LIGHT DISTRIBUTOR AND METHOD FOR THE PRODUCTION OF A PHOTOSYNTHETIC CULTURE - The invention provides a photo bioreactor comprising an aqueous liquid comprising a photosynthetic culture and light distributors (30). Each light distributor has a surface arranged to receive light and a tapered surface arranged to emit at least part of the received light. At least part of the tapered surface is submerged in the aqueous liquid comprising the photosynthetic culture. Light may be distributed efficiently in the aqueous liquid comprising the photosynthetic culture by relatively simple and cheap means. The reactor allows a high illuminated volume fraction. | 2011-05-19 |
20110117632 | PHOTO BIOREACTOR WITH LIGHT DISTRIBUTOR AND METHOD FOR THE PRODUCTION OF A PHOTOSYNTHETIC CULTURE - The invention provides a photo bioreactor comprising an aqueous liquid comprising a photosynthetic culture and a light distributor ( | 2011-05-19 |
20110117633 | STRIPPING ABSORPTION MODULE - In a process, a portion of a liquid mixture flow is vaporized to produce a vapor and a depleted flow of liquid. The vapor is introduced to a brine which is adapted to exothermically absorb one or more components therefrom, and heat is withdrawn, to produce at least a flow of heat and a flow of brine which is enriched in the one or more components. The heat previously withdrawn is transferred, to drive the vaporization. This transfer can be associated with the change of a working fluid from a gaseous into a liquid state. In this case, the heat withdrawal involves the change of the working fluid from the liquid to the gaseous state. In the liquid state, the working fluid flows only by one or more of gravity, convection and wicking. In the gaseous state, the working fluid flows only by one or more of diffusion and convection. | 2011-05-19 |
20110117634 | FLAT CELL CARRIERS WITH CELL TRAPS - Cell carrier structures using dynamic flow of cell bearing, washing, or nourishing fluid, from an input reservoir region to an output reservoir region. A common feature of the several structures by which this can be achieved is the presence of channels generally having low height or other cross section, such that the cell bearing fluid readily traverses these channels by capillary action. Optional pumping assistance can also be provided. The capture wells or traps are disposed generally along the length of these channels such that the cells have multiple chances of being captured in a trap or well. The traps or wells are structured such that only a single cell can be trapped in each well or trap, and the disposition of the wells or traps as appendages to the fluid flow channels facilitates the washing or nourishing of the cells while their proliferation or development is being observed. | 2011-05-19 |
20110117635 | Multipurpose Micro Electric Field Network Cell Processing Device - A multipurpose micro electric field network cell processing device comprises: a hollow frame structure; transparent film layers which are respectively correspondingly arranged on the upper side surface and the lower side surface of the frame; electrode groups which are arranged on the transparent film layer on at least one side and used for generating a low strength electric field; wire connecting terminals of the electrode groups arranged on at least one end of the frame; and an inlet and an outlet of culture/processing solution arranged at two corresponding ends of the frame, wherein sandwich space surrounded by the two transparent film layers and the frame constitutes a cell culture/processing chamber. The device can effectively introduce or deliver a drug into target cells under a low strength electric field network environment, monitor and control the whole experiment/processing process more precisely and be conducive to separation and selection of the target cells. | 2011-05-19 |
20110117636 | LATERAL FLOW IMMUNOASSAY DEVICE WITH A MORE RAPID AND ACCURATE TEST RESULT - The present invention provides a lateral flow immunoassay device for qualitative or quantitative analysis of an analyte of interest in a whole blood sample with a more rapid and accurate result. This device includes a sample receiving pad, a conjugate pad, a flow delaying pad and a wicking membrane in this order. A polycation is provided within and bound to the sample receiving pad in order to separate the red blood cell from the whole blood sample. A relation between average pore size (P | 2011-05-19 |
20110117637 | ZERO-MODE WAVEGUIDES WITH NON-REFLECTING WALLS - The application relates to improved optical containment structures, methods of manufacture and use, and systems for employing same. The optical containment structures generally comprise zero-mode waveguide structures having non-reflective walls. The non-reflective walls allow the preparation of optical containment regions in which the optical containment dimensions can be decoupled from the solution containment dimensions. The application also relates to methods for producing islands of functionality within nanoscale apertures. | 2011-05-19 |
20110117638 | PHOTOBIOREACTOR - A photobioreactor for growing algae comprises a tank for holding a volume of growth medium. A plurality of light sources are disposed either within the tank or externally to it in a manner to illuminate substantially uniformly the entire volume of growth medium when the tank is in operation. At least one draft tube is disposed within the tank, above the floor or bottom of the tank, and a diffuser for diffusing a gas stream is disposed near the bottom of the tank so that gas bubbles released from the diffuser rise to the surface of the liquid within the draft tube, thus causing fluid flow upward within the draft tube and downward outside of it, imparting a mixing or agitating motion to algae strains growing within the tank. | 2011-05-19 |
20110117639 | Taylor Vortex Flow Bioreactor for Cell Culture - The invention concerns a rotating wall vessel bioreactor ( | 2011-05-19 |
20110117640 | TUMOR ANTIGENS BFA4 AND BCY1 FOR PREVENTION AND / OR TREATMENT OF CANCER - The present invention relates to a nucleic acid encoding a polypeptide and the use of the nucleic acid or polypeptide in preventing and/or treating cancer. In particular, the invention relates to improved vectors for the insertion and expression of foreign genes encoding tumor antigens for use in immunotherapeutic treatment of cancer. | 2011-05-19 |
20110117641 | Plasmid DNA Isolation - The invention provides apparatus, reagents, and methods for rapidly isolating plasmid DNA from a bacterial alkaline lysate. | 2011-05-19 |
20110117642 | TRAP VECTORS AND GENE TRAPPING METHOD BY USING THE SAME - A trap vector containing a loxP sequence composed of inverted repeat sequence 1, a spacer sequence and inverted repeat sequence 2 in this order, the loxP sequence being a mutant loxP wherein a part of the inverted repeat sequence 1 or 2 is mutated. | 2011-05-19 |
20110117643 | Recombinant Expression Vector for Animal Cell - The present invention relates to a recombinant expression vector for an animal cell containing a dihydrofolate reductase (DHFR) coding nucleotide sequence operatively linked to a DHFR promoter, to an animal cell line transformed by the vector, and to a method for preparing a target protein using the same. As compared with existing animal cell expression vectors, the vector of the present invention enables an effective screening of a cell line clone in which foreign genes are amplified together with DHFR genes even at a much lower methotrexate concentration. The present invention exhibits excellent effects in cell line preparation as high-productivity cell lines can be ensured in a short time through the use of a lower concentration of methotrexate in the process of protein production cell line establishment. | 2011-05-19 |
20110117644 | DR5 gene promoter and SIAH-1 gene promoter - The inventors discovered for the first time the nucleotide sequence of the human DR5 gene promoter, the nucleotide sequence of the human Siah-1 gene promoter and what appear to be the core promoter regions thereof. The present invention further provides a screening method for substances which regulate promoter activity, comprising a step of bringing a test substance into contact with cells holding a vector which comprises this DNA together with a reporter gene ligated expressibly to this DNA, and a step of detecting changes in the expressed amount of the reporter gene due to contact with the test substance. This screening method is a method of very efficiently selecting anti-cancer drugs and the like. | 2011-05-19 |
20110117645 | METHOD FOR PROLIFERATION OF PLURIPOTENT STEM CELLS - For efficient proliferation of pluripotent stem cells in a system free from any animal-derived material such as feeder cells or serum, the present invention provides a method for proliferation of pluripotent stem cells, which comprises culturing the pluripotent stem cells in a medium free from both feeder cells and serum in a system containing laminin-5. | 2011-05-19 |
20110117646 | ANTISENSE MODULATION OF C-REACTIVE PROTEIN EXPRESSION - Antisense compounds, compositions and methods are provided for modulating the expression of C-reactive protein. The compositions comprise antisense compounds, particularly antisense oligonucleotides, targeted to nucleic acids encoding C-reactive protein. Methods of using these compounds for modulation of C-reactive protein expression and for treatment of diseases associated with expression of C-reactive protein are provided. | 2011-05-19 |
20110117647 | Red Blood Cell Storage Medium For Extended Storage - Synthetic aqueous storage solutions are disclosed for use in the processing and the storing of red blood cells prepared from whole blood including cells derived from whole blood held for an extended period at room temperature. | 2011-05-19 |
20110117648 | SINGLE CELL SURGERY TOOL AND A CELL TRANSFECTION DEVICE UTILIZING THE PHOTOTHERMAL PROPERTIES OF THIN FILMS AND/OR METAL NANOPARTICLES - This invention provides novel tools for surgery on single cells. In certain embodiments the tools comprise a microcapillary having at and/or near the tip a metal coating or a plurality of nanoparticles that can be heated by application of electromagnetic energy. In certain embodiments substrates are provided that facilitate the introduction of agents into cells. The substrates typically comprise a surface bearing a film or particles or nanoparticles that can be heated by application of electromagnetic energy. | 2011-05-19 |
20110117649 | Catalytic enantioselective synthesis of flavanones and chromanones - Various chromanone, flavanone and abyssinone compounds as can be prepared enantioselectively using a chiral thiourea catalyst. | 2011-05-19 |
20110117650 | Vessel and method for isolating cells from tissue portions - A vessel is adapted to be used in a procedure for isolating and collecting cells from a tissue portion using a centrifuge by providing a sealable chamber separated into two sections by a mesh screen, the chamber having a conical bottom inner surface, with a port at the apex in the lowest point in the chamber and ports at the top of the chamber, the method including placing the tissue portion in the chamber above the screen, washing the tissue, repeatedly as needed, by introducing a washing solution through a top port and draining the wash solution from the chamber through the bottom port, introducing an enzyme solution through a top port, allowing the enzyme solution to partially digest the tissue, centrifuging the vessel, and draining the isolated cells through the bottom port. | 2011-05-19 |
20110117651 | CELL ADHESION PROMOTING AGENT AND METHOD OF PROMOTING CELL ADHESION - The subject invention discloses an agent for promoting cell adhesion to a support, comprising a dispirotripiperazine derivative represented by Formula I below or a salt thereof; a method for promoting cell adhesion to a support comprising adding the dispirotripiperazine derivative represented by Formula I below or a salt thereof to a culture medium, or applying the same to a support; and an agonist of a heparin sulfate that comprises the dispirotripiperazine derivative represented by Formula I below or a salt thereof, and that promotes cell adhesion and/or cell growth. | 2011-05-19 |
20110117652 | SOMATIC EMBRYOGENESIS OF JATROPHA CURCAS FROM OVULES - The present invention relates to the field of somatic embryo production, particularly to methods for somatic embyrogenesis of | 2011-05-19 |
20110117653 | METHOD FOR PRODUCTION OF PLURIPOTENT STEM CELL - The present invention relates to a method for production of a cell population containing a pluripotent stem cell, said method comprising a step of treating a somatic cell which has been contacted with nuclear reprogramming factors under nutrient-starved condition, and/or a step of treating the somatic cell with an agent capable of arresting cell cycle. The present invention allows induction and growth of pluripotent stem cells at high frequency, and it also allows production of pluripotent stem cells with high efficiency. The nuclear reprogramming factors to be used may be any selected from the group consisting of OCT4, SOX2, c-MYC, KLF4, NANOG and LIN28. | 2011-05-19 |
20110117654 | BUFFER SOLUTION FOR ELECTROPORATION AND A METHOD COMPRISING THE USE OF THE SAME - A method for introducing biologically active molecules into animal or human cells using an electric current includes suspending the cells and dissolving the biologically active molecules in a buffer solution including HEPES and at least 10 mmol×1 | 2011-05-19 |
20110117655 | METHODS AND COMPOSITIONS FOR GENETICALLY MANIPULATING CLOSTRIDIA AND RELATED BACTERIA WITH HOMOLOGOUS RECOMBINATION ASSOCIATED PROTEINS - Methods for effecting homologous recombination in a bacterium of the Clostridia family are described. These methods provide enhanced capability to genetically modify clostridia. | 2011-05-19 |
20110117656 | SYSTEMS AND METHODS FOR PROCESSING SAMPLE PROCESSING DEVICES - A system and method for processing sample processing devices. The system can include a base plate adapted to rotate about a rotation axis. The system can further include a cover including a first projection, and a housing. A portion of the housing can be movable with respect to the base plate between an open position and a closed position, and can include a second projection. The first projection and the second projection can be adapted to be coupled together when the portion is in the open position and decoupled when the portion is in the closed position. The method can include coupling the cover to the portion of the housing, moving the portion of the housing from the open position to the closed position, and rotating the base plate about the rotation axis. | 2011-05-19 |
20110117657 | SELECTIVE AND SENSITIVE DETECTION OF MERCURIC ION BY NOVEL DANSYL-APPENDED CALIX[4]ARENE MOLECULES, VIA FLUORESCENCE QUENCHING - In particular, Compounds of Formula I or Formula II, generally known as calix[4]arenes, may be prepared. The compounds may be used to test samples for the presence of Hg | 2011-05-19 |
20110117658 | METHOD OF RATIONAL-BASED DRUG DESIGN USING OSTEOCALCIN - The invention relates to a method of identifying a compound that affects osteocalcin activity, comprising obtaining a 3D structure of osteocalcin or a fragment thereof, designing a compound to interact with, or mimic, the 3D structure of osteocalcin or fragment thereof, obtaining the compound, and determining whether the compound affects osteocalcin activity. | 2011-05-19 |
20110117659 | QUINAZOLINE-CONTAINING KITS FOR LABELING ALDEHYDE OR KETONE MOIETIES - Novel fluorescent derivitization reagents are described that are suitable for coupling to biomolecules that contain aldehyde or ketone functional groups. In one embodiment is provided reagents that have the following formula: | 2011-05-19 |
20110117660 | PHYSICAL CHARACTERIZATION OF OLIGONUCLEOTIDE CONJUGATES - The present invention relates generally to methods useful in characterizing oligonucleotide conjugates, comprising an oligonucleotide and a modifying high molecular weight compound, by providing means for separating the high molecular weight compound from the oligonucleotide while maintaining the oligonucleotide's structural integrity. The ability to break the oligonucleotide construct down into its constituent parts while maintaining the structural integrity of the oligonucleotide allows for more efficient and effective downstream analysis including, but not limited to, sequencing of the oligonucleotide, characterization of degradation products, and identification of areas of decreased stability in the oligonucleotide conjugate. | 2011-05-19 |
20110117661 | POLYPEPTIDES, SYSTEMS, AND METHODS USEFUL FOR DETECTING GLUCOSE - The presently-disclosed subject matter provides biosensors for detecting molecules of interest. The biosensors comprise a polypeptide capable of selectively-binding glucose, wherein the polypeptide molecule is selected from: an unnatural analogue of wild type glucose binding protein; a fragment of wild type glucose binding protein; and an unnatural analogue fragment of wild type glucose binding protein. | 2011-05-19 |
20110117662 | MATERIAL FOR LITHIUM SECONDARY BATTERY OF HIGH PERFORMANCE - Provided is a cathode active material containing a Ni-based lithium mixed transition metal oxide. More specifically, the cathode active material comprises the lithium mixed transition metal oxide having a composition represented by Formula I of Li | 2011-05-19 |
20110117663 | USE OF A FABRIC COMPRISING A SPECIFIC MATERIAL FOR DETECTING THE PRESENCE OF A CHEMICAL SUBSTANCE - A method for using of a fabric comprising a material chosen from metals, metallic alloys, polymers, inorganic compounds and mixtures thereof, which material is capable of detecting the presence of a chemical substance, for the detection of said chemical substance. | 2011-05-19 |
20110117664 | Reagent, A Kit, And A Method For Detecting And Identifying A Wide Range Of Illicit Drugs - A reagent for detecting and identifying a chemical substance. The reagent is an emulsion including a cobalt salt dissolved in water which also includes at least one organic solvent that is at least partly water-miscible and also including an organic compound which serves as an ion pair color changing indicator or a pH sensitive color changing indicator, the organic compound dissolved in an organic solvent only partly miscible with water. A two product kit for detecting and identifying a chemical substance is also taught. The kit includes the aforementioned reagent and a diazonium salt, typically a diazonium salt having electron withdrawing groups on its phenyl rings. A method for detecting and identifying a chemical substance using the two product kit is also discussed. The reagent, testing kit and method may be used for detecting and identifying controlled substances. | 2011-05-19 |
20110117665 | ANALYZING DEVICE, AND ANALYZING METHOD USING THE ANALYZING DEVICE - An analyzing device includes: an operation cavity ( | 2011-05-19 |
20110117666 | FLUORESCENT PROBE - A fluorescent probe comprising a compound represented as (Fluorophore A)-S-(Fluorophore B) (Fluorophore A and Fluorophore B are fluorophores which emit fluorescence when they are irradiated with an excitation light of a wavelength of 600 to 950 nm, Fluorophore A has a property that it shows change of fluorescence characteristic before and after a specific reaction with an substance to be measured, and S represents a spacer which connects Fluorophore A and Fluorophore B), which compound shows substantial change in efficiency of fluorescence resonance energy transfer between Fluorophore A and Fluorophore B before and after the specific reaction with the objective substance, wherein Fluorophore A is represented by the following formula (AI): | 2011-05-19 |
20110117667 | PHOTOINDUCED SIGNAL AMPLIFICATION THROUGH EXTERNALLY SENSITIZED PHOTOFRAGMENTATION IN MASKED PHOTOSENSITIZERS AND PHOTOAMPLIFIED FLUORESCENCE TURN-OFF SYSTEM - Provided is a photoamplified fluorescence turn-off assay where a masked photosensitizer is mixed with a fluorescent molecule. This mixture is brightly fluorescent because the masked photosensitizer is not capable of quenching the fluorophore. When the photosensitizer is released and amplified, the photosensitizer quenches the emission of fluorophores very efficiently. | 2011-05-19 |
20110117668 | SELF-POWERED SMART DIAGNOSTIC DEVICES - Devices and methods are provided for immobilizing a diagnostic target (e.g., indicative of a disease) from a solution (e.g., a biological fluid). The diagnostic target is first bound to a capture conjugate that includes a reversibly-associative polymer moieties attached to a first binding moiety that binds to the diagnostic target. Once the diagnostic target is bound to the capture conjugate, the solution is subjected to a change in heat and/or pH to cause the reversibly-associative polymer moieties to aggregate. The aggregates are then immobilized (e.g., via filtration). | 2011-05-19 |
20110117669 | MATERIALS AND METHODS FOR DETECTING TOXINS, PATHOGENS AND OTHER BIOLOGICAL MATERIALS - Embodiments of the present invention provide binding molecule-functionalized high electron mobility transistors (HEMTs) that can be used to detect toxins, pathogens and other biological materials. In a specific embodiment, an antibody-functionalized HEMT can be used to detect botulinum toxin. The antibody can be anchored to a gold-layered gate area of the HEMT through immobilized thioglycolic acid. Embodiments of the subject detectors can be used in field-deployable electronic biological applications based on AlGaN/GaN HEMTs. | 2011-05-19 |
20110117670 | MULTIPLEX IMMUNOASSAYS FOR HEMOGLOBIN, HEMOGLOBIN VARIANTS, AND GLYCATED FORMS - Hemoglobin, its variants, and glycated forms of each are determined individually in a multiplex assay that permits correction of the measured level of HbA1c to account for glycated variants and other factors related to the inclusion of the variants in the sample. New antibodies that are particularly well adapted to the multiplex assay are also provided. | 2011-05-19 |
20110117671 | Method for Stabilizing Microparticles Having Reactive Substance Bound Thereto, and Reagent Containing the Microparticles - Provided is a method for maintaining the reactivity of microparticles having a reactive substance bound thereto in a dispersion liquid of the microparticles over a long period of time by stabilizing the microparticles in the dispersion liquid. The method for stabilizing microparticles having a reactive substance bound thereto includes the step of allowing a sulfur-containing amino acid or a derivative thereof to coexist in a dispersion liquid of the microparticles. The sulfur-containing amino acid includes one or more of cysteine, cystine, and methionine. The method is particularly useful when a precipitation preventing substance, such as a polyanion, dextran, or the like, is allowed to coexist in the dispersion liquid. | 2011-05-19 |
20110117672 | MAGNETIC IMMUNOCHROMATOGRAPHIC TEST METHOD AND DEVICE - Method for detecting and quantifying an analyte in a liquid sample, using a test strip and magnetic particles as a detectable label and based on the detection of an amount of magnetic particles which become bound to a reading zone of a test strip as a result of performing the method, said amount being linked through a function to the analyte content of the sample, wherein the magnetic particles exhibit a nonlinear magnetization characteristic, which test strip is made of porous material and is arranged inside a case, cartridge or the like to form an assay device, wherein in its part surrounding the reading zone, the case is made of a material that is permeable to magnetic field, wherein for the reading of the reaction, the assay device is positioned in a measure cell of a magnetic reading device which detects the amount of magnetic particles in the reading zone by submitting it to at least one excitation magnetic field having about 90% of its power within one frequency band or a plurality of frequency bands, and the reading device measures the induced magnetic response field outside said frequency band or said plurality of frequency bands. | 2011-05-19 |
20110117673 | METHODS AND SYSTEMS TO COLLECT AND PREPARE SAMPLES, TO IMPLEMENT, INITIATE AND PERFORM ASSAYS, AND TO CONTROL AND MANAGE FLUID FLOW - Methods and systems to related to sample collection, assays, and fluid control and management. Methods and systems disclosed herein, and portions thereof, may be implemented alone and/or in various combinations with one another. | 2011-05-19 |
20110117674 | ASSAY METHOD AND DEVICE - A method for the analysis of at least two analytes in a liquid sample, in which a substrate is provided wherein at least two different types of capturing molecules are immobilized on the substrate and wherein each type of capturing molecule has specific affinity for an analyte. The sample is contacted with capturing molecules, wherein for at least one analyte to be analyzed contact is induced between the capturing molecules and a labelled detection molecule with specific affinity for the analyte, and for at least one another analyte to be contact is induced between the capturing molecules and a labelled version of the analyte. A detectable signal is measured from the labelled detection molecule and the labelled analyte on the substrate, wherein the concentration of the labelled analyte is adapted to the concentration of the analyte in the sample. | 2011-05-19 |
20110117675 | SUBSTANCE IMMOBILIZING APPARATUS, SUBSTANCE DETECTING APPARATUS AND SUBSTANCE IMMOBILIZING METHOD - The efficiency of the specific binding of a target substance to an immobilization region is increased. As a first step, target substance | 2011-05-19 |
20110117676 | MAGNETIC SENSOR, PRODUCTION METHOD OF THE SAME, AND TARGET SUBSTANCE DETECTING APPARATUS AND BIOSENSOR KIT USING THE SAME - The present invention provides a magnetic sensor which detects a target substance indirectly by making a labeling substance larger than the target substance bond with the target substance contained in a sample in a detection area, and detecting the labeling substance, comprising a capture area which is relatively easy to capture the target substance, and a non-capture area which is relatively hard to capture the target substance, on a surface of a member which is comprised in a detection area, wherein the capture area is surrounded by the non-capture area. Thereby, the sensor enables to detect comparatively accurately the number and concentration of substances which cannot be directly detected, and enables to be used for detection of various target substances. | 2011-05-19 |
20110117677 | Spacer structure in MRAM cell and method of its fabrication - Methods are presented for fabricating an MTJ element having a uniform vertical distance between its free layer and a bit line and, in addition, having a protective spacer layer formed abutting the lateral sides of the MTJ element to eliminate leakage currents between MTJ layers and the bit line. Each method forms a dielectric spacer layer on the lateral sides of the MTJ element and, depending on the method, includes an additional layer that protects the spacer layer during etching processes used to form a Cu damascene bit line. At various stages in the process, a dielectric layer is also formed to act as a CMP stop layer so that the capping layer on the MTJ element is not thinned by the CMP process that planarizes the surrounding insulation. Subsequent to planarization, the stop layer is removed by an anisotropic etch of such precision that the MTJ element capping layer is not reduced in thickness and serves to maintain uniform vertical distance between the bit line and the MTJ free layer. | 2011-05-19 |
20110117678 | CARBON CONTAINING LOW-K DIELECTRIC CONSTANT RECOVERY USING UV TREATMENT - A method for the ultraviolet (UV) treatment of carbon-containing low-k dielectric and associated apparatus enables process induced damage repair. The methods of the invention are particularly applicable in the context of damascene processing to recover lost low-k property of a dielectric damaged during processing, either pre-metallization, post-planarization, or both. UV treatments can include an exposure of the subject low-k dielectric to a constrained UV spectral profile and/or chemical silylating agent, or both. | 2011-05-19 |
20110117679 | SACRIFICIAL OFFSET PROTECTION FILM FOR A FINFET DEVICE - A method for fabricating a semiconductor device is disclosed. An exemplary embodiment of the method includes providing a substrate; forming a fin structure over the substrate; forming a gate structure, wherein the gate structure overlies a portion of the fin structure; forming a sacrificial-offset-protection layer over another portion of the fin structure; and thereafter performing an implantation process. | 2011-05-19 |
20110117680 | INLINE DETECTION OF SUBSTRATE POSITIONING DURING PROCESSING - Embodiments of the present invention generally provide a method for detecting the position of a substrate within a processing chamber. Embodiments of the present invention are particularly useful for the detection of a mis-positioned solar cell substrate during photoabsorber layer deposition processes within a solar cell production line. Reflected power is measured during processing of a substrate and communicated to a system controller. The system controller compares the measured reflected power with an established range of reflected power. If the measured reflected power is substantially out of range, the system controller signals for the chamber to be taken offline for inspection, maintenance, and/or repair. The system controller may further divert the flow of substrates within the production line around the offline chamber without shutting down the entire solar cell production line. | 2011-05-19 |
20110117681 | THIN FILM IMAGING METHOD AND APPARATUS - Methods and apparatus are presented for monitoring the deposition and/or post-deposition processing of semiconductor thin films using photoluminescence imaging. The photoluminescence images are analysed to determine one or more properties of the semiconductor film, and variations thereof across the film. These properties are used to infer information about the deposition process, which can then be used to adjust the deposition process conditions and the conditions of subsequent processing steps. The methods and apparatus have particular application to thin film-based solar cells. | 2011-05-19 |
20110117682 | APPARATUS AND METHOD FOR PLASMA PROCESSING - Disclosed is an apparatus and method for plasma processing, which facilitates to constantly control a RF voltage supplied to a substrate supporting member by precisely detecting an inductive RF voltage induced to the substrate supporting member for a plasma, the apparatus comprising: a substrate supporting member for supporting a substrate, installed in a reaction room of a processing chamber; a RF generator for supplying a RF voltage to the substrate supporting member so as to form plasma in the reaction room; and a matching device for matching impedance of the RF voltage to be supplied to the substrate supporting member from the RF generator, wherein the matching device comprises: a matching unit for matching the impedance of RF voltage; and an inductive RF detecting unit which an inductive RF detecting voltage by removing noise frequency elements except a waveform of the RF voltage from a waveform of an inductive RF voltage induced to the substrate supporting member, and supplies the detected inductive RF detecting voltage to the RF generator so as to control the RF voltage. | 2011-05-19 |
20110117683 | CHIP QUALITY DETERMINATION METHOD AND MARKING MECHANISM USING SAME - A chip quality determination method includes the steps of (a) determining the continuity of defective chips in at least four directions of an X-axis and a Y-axis on a wafer based on the wafer test result of determining the acceptability of chips arranged in a matrix in the four directions on the wafer, and dividing the defective chips into one or more defective groups so that successive ones of the defective chips are in the same defective group; (b) calculating a quality determination index of each of one or more determination target wafer periphery neighboring chips among wafer periphery neighboring chips located within a predetermined range from the periphery of the wafer based on the distance from a corresponding one of the defective groups; and (c) determining the quality of the determination target wafer periphery neighboring chips by comparing the quality determination indexes thereof with a preset threshold. | 2011-05-19 |
20110117684 | Semiconductor light-emitting element and method for producing the same - A semiconductor light-emitting element includes, a first semiconductor layer, a second semiconductor layer, a light-emitting layer provided between the first semiconductor layer and the second semiconductor layer, a first electrode connected to the first semiconductor layer, and a second electrode provided on the second semiconductor layer. A side of the second electrode facing to the second semiconductor layer is composed of at least any one of silver and silver alloy. The second electrode has a void having a width of emission wavelength or less of the light-emitting layer in a plane of the second electrode facing to the second semiconductor layer. | 2011-05-19 |
20110117685 | METHOD OF MANUFACTURING ORGANIC LIGHT EMITTING DIODE DISPLAY - A method of manufacturing an organic light emitting diode display, the method including forming an amorphous silicon layer on a buffer layer disposed on substrate, heat-treating the amorphous silicon film to form a microcrystalline silicon film; and scanning and irradiating a linear laser beam twice or more onto the microcrystalline silicon film to form a polysilicon film, wherein a subsequent scanning of the linear laser beam partially overlaps previous scanning of the linear laser beam in a width direction. | 2011-05-19 |
20110117686 | METHOD OF FABRICATING LIGHT EXTRACTOR - Methods of fabricating light extractors are disclosed. The method of fabricating an optical construction for extracting light from a substrate includes the steps of: (a) providing a substrate that has a surface; (b) disposing a plurality of structures on the surface of the substrate, where the plurality of structures form open areas that expose the surface of the substrate; (c) shrinking at least some of the structures; and (d) applying an overcoat to cover the shrunk structures and the surface of the substrate in the open areas. | 2011-05-19 |
20110117687 | ORGANIC LIGHT-EMITTING DISPLAY DEVICE AND METHOD FOR MANUFACTURING THE SAME - Provided is an organic light-emitting display device (OLED) and method of manufacturing the same. The OLED comprises a substrate and a thin film transistor, with source/drain electrodes, located at a predetermined area on the substrate. A passivation layer is located on the source/drain electrodes with a via hole exposing one of the source/drain electrodes. A first pixel electrode is located at the bottom of the via hole, electrically coupled to the exposed source/drain electrode, and extending onto the side wall of the via hole and the passivation layer. A planarization pattern fills the via hole in which the first pixel electrode is located and exposes the portion of the first pixel electrode on the passivation layer. | 2011-05-19 |
20110117688 | ORGANIC EL DEVICE - According to one embodiment, a method of manufacturing an organic EL device includes providing a structure including a substrate and an electrode positioned above the substrate, and forming an organic layer including a mixture of first and second organic materials above the electrode. The first organic material has a first sublimation point. The second organic material has a second sublimation point higher than the first sublimation point. The formation of the organic layer includes heating an evaporation material including a mixture of the first and second organic materials to an evaporation temperature so as to sublimate the first and second organic materials, and delivering the sublimed first and second organic materials toward the electrode to deposit a mixture including the first and second organic materials above the electrode. The evaporation temperature is, for example, a temperature higher than the second sublimation temperature by 50° C. or more. | 2011-05-19 |
20110117689 | SEMICONDUCTOR SENSOR AND MANUFACTURING METHOD OF SENSOR BODY FOR SEMICONDUCTOR SENSOR - A semiconductor sensor of which the thickness may be reduced and a method of manufacturing a sensor body for the semiconductor sensor are provided. A total length L | 2011-05-19 |
20110117690 | Fabrication of Nanovoid-Imbedded Bismuth Telluride with low dimensional system - A new fabrication method for nanovoids-imbedded bismuth telluride (Bi—Te) material with low dimensional (quantum-dots, quantum-wires, or quantum-wells) structure was conceived during the development of advanced thermoelectric (TE) materials. Bismuth telluride is currently the best-known candidate material for solid-state TE cooling devices because it possesses the highest TE figure of merit at room temperature. The innovative process described here allows nanometer-scale voids to be incorporated in Bi—Te material. The final nanovoid structure such as void size, size distribution, void location, etc. can be also controlled under various process conditions. | 2011-05-19 |
20110117691 | MIXED TRIMMING METHOD - The invention relates to a method of trimming a structure that includes a first wafer bonded to a second wafer, with the first wafer having a chamfered edge. The method includes a first step of trimming the edge of the first wafer by mechanical machining over a predetermined depth in the first wafer. This first trimming step is followed by a second step of non-mechanical trimming over at least the remaining thickness of the first wafer. | 2011-05-19 |
20110117692 | CIGS SOLAR CELL HAVING THERMAL EXPANSION BUFFER LAYER AND METHOD FOR FABRICATING THE SAME - A copper/indium/gallium/selenium (CIGS) solar cell including a thermal expansion buffer layer, and a method for fabricating the same are provided. The thermal expansion buffer layer is configured between an alloy thin film layer and a CIGS thin film layer. The thermal expansion buffer layer is deposited by executing a thin film deposition process with a continuous sputtering machine bombarding a cuprous sulphide (Cu | 2011-05-19 |
20110117693 | DEVICE AND METHOD FOR TEMPERING OBJECTS IN A TREATMENT CHAMBER - The invention relates to a device ( | 2011-05-19 |
20110117694 | SOLAR CELL HAVING SPHERICAL SURFACE AND METHOD OF MANUFACTURING THE SAME - Provided is a solar cell having a spherical surface. The solar cell includes a substrate having a back contact layer formed thereon; a plurality of carbon nanoelectrodes formed on the back contact layer so as to cross the back contact layer at right angles; a p-type junction layer formed to have a plurality of spheres which surround the plurality of carbon nanoelectrodes; an n-type junction layer and a transparent electrode layer that are sequentially laminated on the p-type junction layer; a first electrode formed on one side of the top surface of the back contact layer; and a second electrode formed on one side of the top surface of the transparent layer. | 2011-05-19 |
20110117695 | FABRICATION METHOD OF ORGANIC THIN-FILM TRANSISTORS - This invention discloses a fabrication method of organic thin-film transistors (OTFTs) using the micro-contact printing. The OTFT can be of the bottom-gate or top-gate configuration. The micro-contact printing operation of this fabrication method does not require clean-room environment and high processing temperature, and does not have the problem of 2D shrinkage of the printed patterns either. Furthermore, the pre-wetting technique employed in the micro-contact printing results in improved fidelity in the pattern transfer and solves the problems of pairing and cross-talking between neighboring patterns. | 2011-05-19 |
20110117696 | CdTe SURFACE TREATMENT FOR STABLE BACK CONTACTS - Disclosed are etching compositions and processes of using the same for etching the surface of CdTe-containing layers. | 2011-05-19 |
20110117697 | Semiconductor Device and Manufacturing Method Thereof - An object is to provide a semiconductor device of which a manufacturing process is not complicated and by which cost can be suppressed, by forming a thin film transistor using an oxide semiconductor film typified by zinc oxide, and a manufacturing method thereof. For the semiconductor device, a gate electrode is formed over a substrate; a gate insulating film is formed covering the gate electrode; an oxide semiconductor film is formed over the gate insulating film; and a first conductive film and a second conductive film are formed over the oxide semiconductor film. The oxide semiconductor film has at least a crystallized region in a channel region. | 2011-05-19 |
20110117698 | METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE - An object is to establish a processing technique in manufacture of a semiconductor device in which an oxide semiconductor is used. A gate electrode is formed over a substrate, a gate insulating layer is formed over the gate electrode, an oxide semiconductor layer is formed over the gate insulating layer, the oxide semiconductor layer is processed by wet etching to form an island-shaped oxide semiconductor layer, a conductive layer is formed to cover the island-shaped oxide semiconductor layer, the conductive layer is processed by dry etching to form a source electrode, and a drain electrode and part of the island-shaped oxide semiconductor layer is removed by dry etching to form a recessed portion in the island-shaped oxide semiconductor layer. | 2011-05-19 |
20110117699 | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE - A semiconductor substrate made of a semiconductor material is prepared, and a hetero semiconductor region is formed on the semiconductor substrate to form a heterojunction in an interface between the hetero semiconductor region and the semiconductor substrate. The hetero semiconductor region is made of a semiconductor material having a bandgap different from that of the semiconductor material, and a part of the hetero semiconductor region includes a film thickness control portion whose film thickness is thinner than that of the other part thereof. By oxidizing the hetero semiconductor region with a thickness equal to the film thickness of the film thickness control portion, a gate insulating film adjacent to the heterojunction is formed. A gate electrode is formed on the gate insulating film. This makes it possible to manufacture a semiconductor device including the gate insulating film with a lower ON resistance, and with a higher insulating characteristic and reliability. | 2011-05-19 |
20110117700 | STACKABLE SEMICONDUCTOR DEVICE PACKAGES - Described herein are stackable semiconductor device packages and related stacked package assemblies and methods. In one embodiment, a manufacturing method includes: (1) providing a substrate including contact pads disposed adjacent to an upper surface of the substrate; (2) applying an electrically conductive material to form conductive bumps disposed adjacent to respective ones of the contact pads; (3) electrically connecting a semiconductor device to the upper surface of the substrate; (4) applying a molding material to form a molded structure covering the conductive bumps and the semiconductor device; (5) forming a set of cutting slits extending partially through the molded structure and the conductive bumps to form truncated conductive bumps; and (6) reflowing the truncated conductive bumps to form reflowed conductive bumps. | 2011-05-19 |
20110117701 | Fiducial Scheme Adapted for Stacked Integrated Circuits - A method for stacking integrated circuit substrates and the substrates used therein are disclosed. In the method, an integrated circuit substrate having top and bottom surfaces is provided. The substrate is divided vertically into a plurality of layers including an integrated circuit layer having integrated circuit elements constructed therein and a buffer layer adjacent to the bottom surface. An alignment fiducial mark extending from the top surface of the wafer into the substrate to a depth below that of the circuit layer is constructed. The vias are arranged in a pattern that provides a fiducial mark when viewed from the bottom surface of the substrate. The pattern can be chosen such that it is recognized by a commercial steeper/scanner/contact mask aligner when viewed from said backside of said wafer. After the substrate is thinned, the alignment fiducial mark is then used to position a mask used in subsequent processing. | 2011-05-19 |
20110117702 | APPARATUS AND METHOD FOR PROCESSING A SUBSTRATE - A method of processing a substrate that displays out-gassing when placed in a vacuum comprises placing the substrate in a vacuum and performing an out-gassing treatment by heating the substrate to a temperature T | 2011-05-19 |
20110117703 | FABRICATION OF ELECTRONIC DEVICES INCLUDING FLEXIBLE ELECTRICAL CIRCUITS - A packaged electronic device includes a die, a flexible circuit structure, and a barrier film disposed on the die. The die includes die circuitry and electrical contacts. The flexible circuit structure is bonded directly to the die, and includes electrical conductors encapsulated by structural layers. Each electrical conductor contacts a respective electrical contact. The electronic device is encapsulated by the barrier film and one or more of the structural layers. | 2011-05-19 |
20110117704 | CIRCUIT MEMBER, MANUFACTURING METHOD OF THE CIRCUIT MEMBER, AND SEMICONDUCTOR DEVICE INCLUDING THE CIRCUIT MEMBER - A circuit member includes a lead frame material having a die pad, a lead part to be electrically connected with a semiconductor chip, and an outer frame configured to support the die pad and the lead part. The lead frame material includes a resin sealing region. Roughened faces | 2011-05-19 |
20110117705 | MULTI-LAYER THICK-FILM RF PACKAGE - A method for producing a multi-layer thick-film RF package includes forming conductive layer(s) including one or more source portions, one or more gate portions, and/or one or more drain portions on a ceramic substrate. The conductive layer(s) and the ceramic substrate are fired or otherwise heated in a furnace until sintered. Thereafter, a dielectric pattern is formed on the conductive layer(s) and fired or otherwise heated in the furnace until sintered. Then, a conductive bridge is formed on the dielectric pattern, over the one or more drain portions and between the one or more source portions, which is then fired until sintered in the furnace. As a result, a monolithic, single-piece, sintered, high-frequency RF power transistor package having circuit features including a highly conductive and low capacitive bridge is produced. | 2011-05-19 |
20110117706 | PROTECTIVE TAPE JOINING METHOD AND PROTECTIVE TAPE JOINING APPARATUS - A cooling plate having a cooling pipe mounted therein in a serpentine shape is placed in a stack manner on a rear face of a chuck table for suction-holding a rear face of the semiconductor wafer. A coolant is circulated through the cooling pipe, thereby cooling the chuck table. The semiconductor wafer is suction-held while the chuck table is cooled. In addition, the protective tape is joined to the semiconductor wafer while the chuck table is cooled. That is, the protective tape is joined to the surface of the semiconductor wafer while being cooled indirectly via the semiconductor wafer cooled in advance through direct contact to the chuck table during joining of the protective tape. | 2011-05-19 |
20110117707 | PIXEL STRUCTURE AND METHOD FOR MANUFACTURING THE SAME - A method for manufacturing a pixel structure is provided. First, a first mask process is performed to form a patterned first metal layer on a substrate, wherein the patterned first metal layer includes a gate. Next, a second mask process is performed to form a patterned insulating layer and a patterned semiconductor layer over the gate, wherein the patterned insulating layer is disposed on the patterned first metal layer, and the patterned semiconductor layer is disposed on the patterned insulating layer. Then, a third mask process is performed to define a thin film transistor (TFT) and a pixel electrode connected thereto and to form a passivation layer to cover the TFT. | 2011-05-19 |
20110117708 | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE - To suppress an effect of metal contamination caused in manufacturing an SOI substrate. After forming a damaged region by irradiating a semiconductor substrate with hydrogen ions, the semiconductor substrate is bonded to a base substrate. Heat treatment is performed to cleave the semiconductor substrate; thus an SOI substrate is manufactured. Even if metal ions enter the semiconductor substrate together with the hydrogen ions in the step of hydrogen ion irradiation, the effect of metal contamination can be suppressed by the gettering process. Accordingly, the irradiation with hydrogen ions can be performed positively by an ion doping method. | 2011-05-19 |
20110117709 | SEMICONDUCTOR DEVICE FABRICATING METHOD - A semiconductor device fabricating method is described. The semiconductor device fabricating method includes providing a substrate. A first gate insulating layer and a second gate insulating layer are formed on the substrate, respectively. A gate layer is blanketly formed. A portion of the gate layer, the first gate insulating layer and the second gate insulating layer are removed to form a first gate, a remaining first gate insulating layer, a second gate and a remaining second gate insulating layer. The remaining first gate insulating layer not covered by the first gate has a first thickness, and the remaining second gate insulating layer not covered by the second gate has a second thickness, wherein a ratio between the first thickness and the second thickness is about 10 to 20. A pair of first spacers and a pair of second spacers are formed on sidewalls of the first gate and the second gate, respectively. | 2011-05-19 |
20110117710 | METHOD OF FABRICATING EFUSE, RESISTOR AND TRANSISTOR - A method of fabricating an efuse, a resistor and a transistor includes the following steps: A substrate is provided. Then, a gate, a resistor and an efuse are formed on the substrate, wherein the gate, the resistor and the efuse together include a first dielectric layer, a polysilicon layer and a hard mask. Later, a source/drain doping region is formed in the substrate besides the gate. After that, the hard mask in the resistor and the efuse is removed. Subsequently, a salicide process is performed to form a silicide layer on the source/drain doping region, the resistor, and the efuse. Then, a planarized second dielectric layer is formed on the substrate and the polysilicon in the gate is exposed. Later, the polysilicon in the gate is removed to form a recess. Finally a metal layer is formed to fill up the recess. | 2011-05-19 |
20110117711 | DOUBLE GATE DEPLETION MODE MOSFET - A metal-oxide-semiconductor field effect transistor (MOSFET) has a body layer that follows the contour of exposed surfaces of a semiconductor substrate and contains a bottom surface of a shallow trench and adjoined sidewalls. A bottom electrode layer vertically abuts the body layer and provides an electrical bias to the body layer. A top electrode and source and drain regions are formed on the body layer. The thickness of the body layer is selected to allow full depletion of the body layer by the top electrode and a bottom electrode layer. The portion of the body layer underneath the shallow trench extends the length of a channel to enable a high voltage operation. Further, the MOSFET provides a double gate configuration and a tight control of the channel to enable a complete pinch-off of the channel and a low off-current in a compact volume. | 2011-05-19 |
20110117712 | SEMICONDUCTOR DEVICE WITH HIGH K DIELECTRIC CONTROL TERMINAL SPACER STRUCTURE - A semiconductor device including a control terminal sidewall spacer structure made of a high-K dielectric material. The semiconductor device includes a control terminal where the spacer structure is a sidewall spacer structure for the control terminal. The semiconductor device includes current terminal regions located in a substrate. In some examples, the spacer structure has a height that is less than the height of the control terminal. In some examples, the spacer structure includes portions located over the regions of the substrate between the first current terminal region and the second current terminal region. | 2011-05-19 |
20110117713 | METHOD OF MAKING FLASH MEMORY CELLS AND PERIPHERAL CIRCUITS HAVING STI, AND FLASH MEMORY DEVICES AND COMPUTER SYSTEMS HAVING THE SAME - An integrated circuit includes flash memory cells, and peripheral circuitry including low voltage transistors (LVT) and high voltage transistors (HVT). The integrated circuit includes a tunnel barrier layer comprising SiON, SiN or other high-k material. The tunnel barrier layer may comprise a part of the gate dielectric of the HVTs. The tunnel barrier layer may constitute the entire gate dielectric of the HVTs. The corresponding tunnel barrier layer may be formed between or upon shallow trench isolation (STIs). Therefore, the manufacturing efficiency of a driver chip IC may be increased. | 2011-05-19 |
20110117714 | Integration of Multiple Gate Oxides with Shallow Trench Isolation Methods to Minimize Divot Formation - A method of forming an isolation region is provided that in one embodiment substantially reduces divot formation. In one embodiment, the method includes providing a semiconductor substrate, forming a first pad dielectric layer on an upper surface of the semiconductor substrate and forming a trench through the first pad dielectric layer into the semiconductor substrate. In a following process sequence, the first pad dielectric layer is laterally etched to expose an upper surface of the semiconductor substrate that is adjacent the trench, and the trench is filled with a trench dielectric material, wherein the trench dielectric material extends atop the upper surface of the semiconductor substrate adjacent the trench and abuts the pad dielectric layer. | 2011-05-19 |
20110117715 | Methods of Forming Capacitors For Semiconductor Memory Devices - A capacitor of a semiconductor memory device, and methods of forming the same, are disclosed. A pad interlayer insulating layer is disposed on a semiconductor substrate of an active region. Landing pads and a central landing pad are disposed in peripheral portions and a central portion of the active region, respectively, to penetrate the pad interlayer insulating layer. The upper surface of the central landing pad has a different area from the upper surfaces of the landing pads. A buried interlayer insulating layer is formed on the pad interlayer insulating layer to cover the landing pads and the central landing pad. Buried plugs are formed on the respective landing pads to penetrate the buried interlayer insulating layer. Lower electrodes are formed on the buried plugs. | 2011-05-19 |
20110117716 | PROGRAMMABLE CAPACITOR ASSOCIATED WITH AN INPUT/OUTPUT PAD - The present invention provides a method and apparatus for a programmable capacitor associated with an input/output pad in the semiconductor device. The apparatus includes a semiconductor die having an upper surface, a first capacitor deployed above the upper surface of the semiconductor die, a separation layer deployed above the first capacitor, and a bond pad deployed above the separation layer such that at least a portion of the bond pad lies above the first capacitor. | 2011-05-19 |
20110117717 | PROGRAMMABLE RESISTIVE MEMORY CELL WITH FILAMENT PLACEMENT STRUCTURE - Programmable metallization memory cells having a first metal contact and a second metal contact with an ion conductor solid electrolyte material between the metal contacts. The first metal contact has a filament placement structure thereon extending into the ion conductor material. In some embodiments, the second metal contact also has a filament placement structure thereon extending into the ion conductor material toward the first filament placement structure. The filament placement structure may have a height of at least about 2 nm. | 2011-05-19 |
20110117718 | METHOD OF FORMING SEMICONDUCTOR DEVICE - A method of forming a semiconductor device includes forming a hole in an insulating film, forming a first conductive film in the hole, removing at least a portion of the insulating film around the first conductive film, and reducing a thickness of the first conductive film to produce a second conductive film. | 2011-05-19 |
20110117719 | METHODS OF PROCESSING SEMICONDUCTOR SUBSTRATES IN FORMING SCRIBE LINE ALIGNMENT MARKS - A method of processing a semiconductor substrate in forming scribe line alignment marks includes forming pitch multiplied non-circuitry features within scribe line area of a semiconductor substrate. Individual of the features, in cross-section, have a maximum width which is less than a minimum photolithographic feature dimension used in lithographically patterning the substrate. Photoresist is deposited over the features. Such is patterned to form photoresist blocks that are individually received between a respective pair of the features in the cross-section. Individual of the features of the respective pairs have a laterally innermost sidewall in the cross-section. Individual of the photoresist blocks have an opposing pair of first pattern edges in the cross-section that are spaced laterally inward of the laterally innermost sidewalls of the respective pair of the features. Individual of the photoresist blocks have an opposing pair of second pattern edges in the cross-section that self-align laterally outward of the first pattern edges to the laterally innermost sidewalls of the features during the patterning. | 2011-05-19 |
20110117720 | METHOD FOR PREPARING CERIUM OXIDE, CERIUM OXIDE PREPARED THEREFROM AND CMP SLURRY COMPRISING THE SAME - The present invention relates to a method for preparing cerium oxide which enables preparation of cerium oxide showing improved polishing performance, cerium oxide prepared therefrom, and CMP slurry comprising the same. | 2011-05-19 |
20110117721 | METHOD OF FORMING ISOLATION LAYER STRUCTURE AND METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE INCLUDING THE SAME - An isolation layer structure includes first to fourth oxide layer patterns. The first and third oxide layer patterns are sequentially formed in a first trench defined by a first recessed top surface of a substrate and sidewalls of gate structures on the substrate in a first region. The first trench has a first width, and the first and third oxide layer patterns have no void therein. The second and fourth oxide layer patterns are sequentially formed in a second trench defined by a second recessed top surface of the substrate and sidewalls of gate structures on the substrate in a second region. The second trench has a second width larger than the first width, and the fourth oxide layer pattern has a void therein. | 2011-05-19 |
20110117722 | Semiconductor Device With Charge Storage Pattern And Method For Fabricating The Same - A semiconductor device (e.g., a non-volatile memory device) with improved data retention characteristics includes active regions that protrude above a top surface of a device isolation region. A tunneling insulating layer is formed on the active regions. Charge storage patterns (e.g., charge trap patterns) are formed so as to be spaced apart from each other. A blocking insulating layer and a gate are formed on the charge storage patterns. | 2011-05-19 |
20110117723 | NANO IMPRINT TECHNIQUE WITH INCREASED FLEXIBILITY WITH RESPECT TO ALIGNMENT AND FEATURE SHAPING - By forming metallization structures on the basis of an imprint technique, in which via openings and trenches may be commonly formed, a significant reduction of process complexity may be achieved due to the omission of at least one further alignment process as required in conventional process techniques. Furthermore, the flexibility and efficiency of imprint lithography may be increased by providing appropriately designed imprint molds in order to provide via openings and trenches exhibiting an increased fill capability, thereby also improving the performance of the finally obtained metallization structures with respect to reliability, resistance against electromigration and the like. | 2011-05-19 |
20110117724 | ISOLATION STRUCTURE FOR STRAINED CHANNEL TRANSISTORS - A method and system is disclosed for forming an improved isolation structure for strained channel transistors. In one example, an isolation structure is formed comprising a trench filled with a nitrogen-containing liner and a gap filler. The nitrogen-containing liner enables the isolation structure to reduce compressive strain contribution to the channel region. | 2011-05-19 |