22nd week of 2015 patent applcation highlights part 14 |
Patent application number | Title | Published |
20150144902 | Organic Light Emitting Diode Display Device - An organic light emitting diode display device includes: a reflective electrode and an auxiliary electrode; a bank layer on the reflective electrode and the auxiliary electrode, the bank layer including a first open portion and a second open portion exposing a portion of the reflective electrode and a portion of the auxiliary electrode, respectively; a separator on the auxiliary electrode, the separator disposed within the second open portion; a pixel electrode in contact with the portion of the reflective electrode exposed by the first open portion of the bank layer, the pixel electrode being disposed separated from the separator; an organic emission layer on the pixel electrode, the organic emission layer divided by the separator, the organic emission layer being disposed separated from the separator; and a common electrode on the organic emission layer, the common electrode connected to the auxiliary electrode. | 2015-05-28 |
20150144903 | ORGANIC LIGHT EMITTING DIODE DEVICE - An organic light emitting diode device includes an emission layer between first and second electrodes, a first auxiliary layer, and a second auxiliary layer. The first electrode includes a silver-magnesium alloy having a greater content of silver than magnesium. The first auxiliary layer is between the first electrode and emission layer, and includes an inorganic material. The second auxiliary layer is between the first electrode and first auxiliary layer, and includes a material having a work function of less than or equal to about 4.0 eV. | 2015-05-28 |
20150144904 | ORGANIC ELECTROLUMINESCENT DEVICE AND REPAIRING METHOD THEREOF - An organic electroluminescent device includes a substrate including a plurality of pixel regions each having a light emission region and an element region; a plurality of thin film transistors (TFTs) including at least one switching TFT and at least one driving TFT in each element region; a planarization layer on the plurality of TFTs; a first electrode on the planarization layer and including first to third portions connected to one another, wherein the first and second portions are at each pixel region, and the third portion is at a neighboring pixel region; an organic light emitting layer on the first electrode; and a second electrode on the organic light emitting layer, wherein an end of the third portion overlaps the driving TFT of the neighboring pixel region. | 2015-05-28 |
20150144905 | ARRAY SUBSTRATE FOR DISPLAY DEVICE - The present invention provides a display device and a dual gate type thin film transistor (TFT) structure for an electronic device. According to an embodiment, the dual gate TFT structure includes a first gate electrode formed on a substrate; a semiconductor layer formed on the first gate electrode; an insulating layer formed on the semiconductor layer, and including first, second and third contact holes therein; drain and source electrodes in contact with the semiconductor layer respectively through the first and second contact holes; a passivation layer formed on the drain electrode and the source electrode, and including a fourth contact hole therein; a planarization layer formed on the passivation layer, and including a fifth contact hole therein; and a second gate electrode formed on the planarization layer, and in electrical contact with the first gate electrode through the third, fourth and fifth contact holes. | 2015-05-28 |
20150144906 | DISPLAY UNIT, METHOD OF MANUFACTURING DISPLAY UNIT, AND ELECTRONIC APPARATUS - A display unit includes: an organic light emitting element including a first electrode, an organic layer, and a second electrode in order, the organic layer including a conductive layer; and an auxiliary electrode configured to be electrically connected to the second electrode via the conductive layer in the organic layer. | 2015-05-28 |
20150144907 | ORGANIC LIGHT EMITTING DIODE DISPLAY PANEL AND METHOD FOR MANUFACTURING THE SAME - An organic light emitting diode display panel is disclosed, which comprises: a first substrate having a first edge, a second edge, a third edge opposite to the first edge, and a fourth edge opposite to the second edge; a second substrate opposite to the first substrate; an organic light emitting diode unit disposed on the second substrate; a fit unit disposed between the first substrate and the second substrate and surrounding the organic light emitting diode unit; and a buffer unit disposed between the first substrate and the second substrate and between the frit unit facing to the first edge of the first substrate and the first edge thereof, wherein the buffer unit has a first end with a first cutting edge connecting to the second edge. In addition, the present invention also provides a method for manufacturing the same. | 2015-05-28 |
20150144908 | ORGANIC LIGHT EMITTING DISPLAY PANEL AND ORGANIC LIGHT EMITTING DISPLAY DEVICE INCLUDING THE SAME - Discussed is an organic light emitting display panel and an organic light emitting display device including the same. In the organic light emitting display panel, each of a plurality of unit pixels includes first to third driving transistors respectively connected to the first to third organic light emitting diodes, a first contact hole connected to one electrode of the first organic light emitting diode, a second contact hole connected to one electrode of the second organic light emitting diode, and a third contact hole connected to one electrode of the third organic light emitting diode, and are arranged in a matrix. | 2015-05-28 |
20150144909 | ORGANIC LIGHT EMITTING DISPLAY APPARATUS AND METHOD FOR MANUFACTURING THE SAME - Disclosed is an organic light emitting display (OLED) apparatus that includes a substrate; an organic light emitting element on the substrate, the organic light emitting element including a first electrode, an organic light emitting layer and a second electrode; a viscoelastic layer on the organic light emitting element, wherein an elastic portion of the viscoelastic layer is about 30% or more, the elastic portion being defined by : Elastic portion (E | 2015-05-28 |
20150144910 | Array Substrate For Display Device And Method Of Fabricating The Same - An array substrate for a display device includes a first thin film transistor (TFT) including a first semiconductor layer, a first gate electrode corresponding to the first semiconductor layer, a first source electrode and a first drain electrode; a second TFT including a second semiconductor layer, a second gate electrode corresponding to the second semiconductor layer, a second source electrode and a second drain electrode; a first transparent capacitor electrode connected to the first drain electrode; a first passivation layer on the first transparent capacitor electrode; a second transparent capacitor electrode on the first passivation layer and connected to the second drain electrode, the second transparent capacitor electrode overlapping the first transparent capacitor electrode; a second passivation layer on or over the first passivation layer and the second transparent capacitor electrode; and a first electrode on the second passivation layer and connected to the second transparent capacitor electrode. | 2015-05-28 |
20150144911 | ORGANIC LIGHT EMITTING DISPLAY - The present disclosure provides an organic light emitting display including: a first substrate including a display area where an organic light emitting device is formed and a non-display area where a plurality of pads are formed, a second substrate facing and spaced apart from the first substrate, a pattern formed in the non-display area of the first substrate and having openings, and an adhesive layer formed between the first substrate and the second substrate and covering a portion of the pattern. | 2015-05-28 |
20150144912 | ORGANIC LIGHT EMITTING DISPLAY APPARATUS AND METHOD OF MANUFACTURING THE SAME - Provided are an organic light emitting display apparatus and a method of manufacturing the same. The organic light emitting display apparatus includes: a thin film transistor (TFT) substrate including a plurality of thin film transistors, an organic light-emissive device on the TFT substrate, and an encapsulation layer on the TFT substrate and the organic light-emissive device, the encapsulation layer being configured to cover the organic light-emissive device, the encapsulation layer including a hybrid material including: a block copolymer, and functionalized graphene. | 2015-05-28 |
20150144913 | ADHESIVE FILM AND MANUFACTURING METHOD OF THE SAME, AND DISPLAY DEVICE INCLUDING THE ADHESIVE FILM - An adhesive film that includes a first region having a first hardness, and second regions disposed on opposing sides of the first region and having a second hardness that is greater than the first hardness. | 2015-05-28 |
20150144914 | DISPLAY DEVICE AND METHOD OF MANUFACTURING THE SAME - Provided is a display device, including a pixel electrode in each of a plurality of pixels; an auxiliary wiring part including a first auxiliary wiring having a first edge portion, and a second auxiliary wiring having a second edge portion spaced apart from and facing the first edge portion; an insulating layer on the pixel electrode and the auxiliary wiring part, and in which a first opening and a second opening are defined, the first opening overlapping the pixel electrode, and the second opening overlapping the first edge portion and the second edge portion; an organic light-emitting layer on the insulating layer and contacting the pixel electrode through the first opening; and an upper electrode on the organic light-emitting layer and having a connection portion electrically connected with the auxiliary wiring part through the second opening. | 2015-05-28 |
20150144915 | Display Panel for Display Device - Disclosed is a display panel in which a jumping wiring made of a heterogeneous material for the prevention of static electricity connects a signal pad with a test wiring of an array substrate, or a display panel, and induces a discharge of the static electricity when the static electricity generated in an array test process flows into the display panel, thereby preventing damage to the display panel. | 2015-05-28 |
20150144916 | ORGANIC EL DISPLAY DEVICE AND METHOD OF MANUFACTURING THE SAME - The present invention is a method of manufacturing an organic EL display device including a display part arranged with a plurality of pixels including an organic EL light emitting layer, and a terminal part arranged with a plurality of terminals each connected to the organic EL light emitting layer respectively, the method comprising forming a TFT drive circuit layer controlling the organic EL light emitting layer and forming the plurality of terminals connected to the TFT drive circuit layer on a first substrate; forming the organic EL light emitting layer connected to the TFT drive circuit layer over the TFT drive circuit layer; forming a sealing film over the organic EL light emitting layer; adhering a second substrate covering the display part in a position corresponding to the first substrate; forming a touch panel sensor substrate and an electrode layer over the second substrate; and exposing the plurality of terminals by etching a part of the sealing film. | 2015-05-28 |
20150144917 | ORGANIC LIGHT EMITTING DISPLAY DEVICE AND METHOD OF MANUFACTURING THE SAME - An organic light emitting display device includes a first substrate, a second substrate, and an array of organic light emitting elements formed over the first substrate and interposed between the first and second substrate. The array comprises a pixel defining layer. The organic light emitting display device further includes a recess formed into the pixel defining layer, a sealing member, and a reinforcing member. The sealing member is formed along the edges of the first and second substrates and interconnects the first and second substrates. The reinforcing member comprises a first portion positioned in the recess and a second portion projected outside the recess toward the second substrate such that the second portion of the reinforcing member is capable of supporting the second substrate when the second substrate is pressed toward the first substrate by an external force. | 2015-05-28 |
20150144918 | METHOD OF MANUFACTURING OPTICAL FILM FOR REDUCING COLOR SHIFT, ORGANIC LIGHT-EMITTING DISPLAY APPARATUS USING OPTICAL FILM FOR REDUCING COLOR SHIFT, AND METHOD OF MANUFACTURING THE SAME - An optical film manufacturing method includes forming a master in which a shape corresponding to a plurality of micro-lens patterns is engraved, forming a low refractive index pattern layer in which the plurality of micro-lens patterns are formed, by using the master, forming a high refractive index material layer that has a higher refractive index than a refractive index of the low refractive index pattern layer, and imprinting the low refractive index pattern layer on the high refractive index material layer to form a high refractive index pattern layer, on a first surface of a substrate. | 2015-05-28 |
20150144919 | DISPLAY DEVICE - A display device includes a first substrate, an organic EL layer formed on the first substrate and curved in each pixel, and color filters disposed in the respective pixels, and curved to match the organic EL layer. With this configuration, a change in the chromaticity and brightness of the display device depending on a viewing angle of a user is reduced. | 2015-05-28 |
20150144920 | TOUCH PANEL - A flexible touch panel is provided. Both reduction in thickness and high sensitivity of a touch panel are achieved. The touch panel includes a first flexible substrate, a first insulating layer over the first substrate, a transistor and a light-emitting element over the first insulating layer, a color filter over the light-emitting element, a pair of sensor electrodes over the color filter, a second insulating layer over the sensor electrodes, a second flexible substrate over the second insulating layer, and a protective layer over the second substrate. A first bonding layer is between the light-emitting element and the color filter. The thickness of the first substrate and the second substrate is each 1 μm to 200 μm inclusive. The first bonding layer includes a region with a thickness of 50 nm to 10 μm inclusive. | 2015-05-28 |
20150144921 | DISPLAY DEVICE - A display device is discussed which can include: a flexible substrate defined into a first area, a second area bent from an edge of the first area, and a third area outwardly expanded from the second area; a thin film transistor layer disposed on the substrate; an organic emission layer disposed on the thin film transistor layer; an encapsulation layer disposed on the organic emission layer; a polarization layer disposed on the encapsulation layer; and a cover window disposed on the polarization layer. The polarization layer is formed on the encapsulation layer opposite to the first and third areas of the substrate. | 2015-05-28 |
20150144922 | LARGE AREA ORGANIC LIGHT EMITTING DIODE DISPLAY - A large area organic light emitting diode display is provided. The organic light emitting diode display comprises a substrate including a display area defining a plurality of pixel areas in a matrix manner and a non-display area surrounding the display area; a thin film transistor disposed in each pixel area; an auxiliary cathode electrode disposed at the same layer with an element of the thin film transistor; a planar layer on the thin film transistor and the auxiliary cathode electrode; an anode electrode connected to the thin film transistor and disposed in each pixel area on the planar layer; an organic light emission layer disposed on the anode electrode; a cathode electrode covering the whole surface of the display area on the organic light emission layer; and a protective electrode covering the auxiliary cathode electrode exposed through a cathode contact hole and contacting the cathode electrode. | 2015-05-28 |
20150144923 | ORGANIC LIGHT EMITTING DIODE DISPLAY DEVICE AND METHOD OF FABRICATING THE SAME - An OLED display device includes a first oxide semiconductor layer including first to fourth regions; a first gate electrode on a first insulating layer and the first oxide semiconductor layer, and completely overlapping the first region; a first storage electrode extending from the first gate electrode and overlapping the second region; a second insulating layer covering the first gate electrode and the first storage electrode and exposing the third and fourth regions; first source and drain electrodes on the second insulating layer and contacting the third and fourth regions; and an emitting diode connected to the first drain electrode, wherein a portion of the second region at an edge of the first storage electrode except a center of the first storage electrode is conductive to form a second storage electrode, and the first and second storage electrodes and the first insulating layer constitute a first storage capacitor. | 2015-05-28 |
20150144924 | CONDENSED CYCLIC COMPOUND AND ORGANIC LIGHT-EMITTING DEVICE INCLUDING THE SAME - A condensed cyclic compound represented by Formula 1 | 2015-05-28 |
20150144925 | ORGANIC LIGHT EMITTING DISPLAY DEVICE - Discussed is an organic light emitting display device. An OLED including a transparent anode formed of one conductive transparent material and an organic light emitting diode (OLED) including a cavity anode formed of a plurality of conductive materials are provided in one panel. | 2015-05-28 |
20150144926 | ORGANIC LIGHT EMITTING DEVICE - Disclosed is an organic light emitting device. The organic light emitting device includes a first emission unit configured to include a common blue emission material layer which is included in common in a plurality of pixels emitting lights having different wavelength ranges, a second emission unit configured to include a red emission material layer, a green emission material layer, and a blue emission material layer which respectively emit lights having different wavelength ranges, a charge generation layer disposed between the first emission unit and the second emission unit, a first electrode formed as a reflective electrode, and configured to supply an electric charge having a first polarity to the first emission unit and the second emission unit, and a second electrode formed as a semi-transmissive electrode, and configured to supply an electric charge having a second polarity to the first emission unit and the second emission unit. | 2015-05-28 |
20150144927 | ORGANIC ELECTROLUMINESCENCE DEVICE AND MATERIAL FOR ORGANIC ELECTROLUMINESCENCE DEVICE - An organic electroluminescence (EL) device includes a charge generating layer including a charge generating material or a hole injection layer including a hole injection material, the charge generating material or the hole injection material including a 1,2-closo-carborane compound represented by the following Formula 1: | 2015-05-28 |
20150144928 | BURIED GRID FOR OUTCOUPLING WAVEGUIDED LIGHT IN OLEDs - Light-emitting devices are provided that include a mixed-index layer having a buried grid disposed below a bottom electrode of the device. The grid provides improved outcoupling into glass and air modes relative to techniques that omit such a grid and/or that use a conventional low-index grid embedded in the emissive layers of the device. | 2015-05-28 |
20150144929 | DISPLAY DEVICE, METHOD OF LAYING OUT LIGHT EMITTING ELEMENTS, AND ELECTRONIC DEVICE - Disclosed herein is a display device in which light emitting elements of a plurality of colors including a light emitting element emitting blue light are formed in each pixel on a substrate on which a transistor is formed for each sub-pixel, and a plurality of pixels formed with sub-pixels of the plurality of colors as a unit are arranged in a form of a matrix, wherein relative positional relation between transistors of sub-pixels of respective light emission colors including blue light and a light emitting section of a light emitting element emitting the blue light is laid out such that distances between the transistors of the sub-pixels of the respective light emission colors including the blue light and the light emitting section of the light emitting element emitting the blue light are equal to each other for the respective colors. | 2015-05-28 |
20150144930 | ORGANIC LIGHT EMITTING DIODE DISPLAY AND METHOD FOR MANUFACTURING THE SAME - An organic light emitting diode (OLED) display includes: a substrate; an organic light emitting diode formed on the substrate; a metal oxide layer formed on the substrate and covering the organic light emitting diode; a first inorganic layer formed on the metal oxide layer and covering a relatively larger area than the metal oxide layer; a first organic layer formed on the first inorganic layer and covering a relatively smaller area than the first inorganic layer; and a second inorganic layer formed on the first organic layer, covering a relatively larger area than the first organic layer, and contacting the first inorganic layer at an edge of the second inorganic layer. | 2015-05-28 |
20150144931 | SUBSTRATE FOR ORGANIC ELECTRONIC DEVICE - The present application relates to a substrate for an organic electronic device, an organic electronic device, and a lighting device. In an embodiment of the present application, a substrate or an organic electronic device which may form an organic electronic device capable of ensuring performance including light extraction efficiency or the like and reliability by applying a scattering layer capable of exhibiting different scattering properties according to an angle of incident light may be provided. | 2015-05-28 |
20150144932 | ADHESIVE FILM AND METHOD FOR ENCAPSULATING ORGANIC ELECTRONIC DEVICE USING SAME - The present invention relates to an adhesive film, to an encapsulated product of an organic electronic device using same and to a method for encapsulating an organic electronic device using same. More particularly, an adhesive film for encapsulating an organic electronic device comprises: a protective film layer, a first adhesive layer, a second adhesive layer and a release film layer sequentially arranged. The peel strength (A) between the first adhesive layer and the protective film layer is lower than the peel strength (B) between the second adhesive layer and the release film layer, and the peel strength (B) between the second adhesive layer and the release film layer is lower than the peel strength (C) between the first adhesive layer and an encapsulation substrate, thus improving faults during a peeling process. | 2015-05-28 |
20150144933 | ORGANIC LIGHT-EMITTING DISPLAY APPARATUS AND METHOD OF MANUFACTURING THE SAME - An organic light-emitting display apparatus includes: a substrate; a pixel electrode disposed on the substrate; an intermediate layer that is disposed on the pixel electrode and includes an organic light-emitting layer; a facing electrode disposed on the intermediate layer; and a thin film encapsulating layer disposed on the facing electrode, wherein the thin film encapsulating layer includes: a first inorganic film and a second inorganic film, which are disposed on the facing electrode; a first organic film that is disposed between the first inorganic film and the second inorganic film and has a first thickness; and a second organic film that is disposed on the second inorganic film and has a second thickness greater than the first thickness. | 2015-05-28 |
20150144934 | Electronic Devices Having Displays With Openings - An electronic device may have a display. The display may have an active region in which display pixels are used to display images. The display may have one or more openings and may be mounted in a housing associated with the electronic device. An electronic component may be mounted in alignment with the openings in the display. The electronic component may include a camera, a light sensor, a light-based proximity sensor, status indicator lights, a light-based touch sensor array, a secondary display that has display pixels that may be viewed through the openings, antenna structures, a speaker, a microphone, or other acoustic, electromagnetic, or light-based component. One or more openings in the display may form a window through which a user of the device may view an external object. Display pixels in the window region may be used in forming a heads-up display. | 2015-05-28 |
20150144935 | ORGANIC LIGHT-EMITTING DEVICE - The present invention provides an organic light emitting device including: a substrate; and two or more stacked light emitting elements, which comprise a first electrode, at least one intermediate electrode, a second electrode, and an organic material layer disposed between the electrodes, the stacked organic light emitting elements including a first group of electrodes electrically connected to each other such that among the electrodes, at least two electrodes, which are not adjacent to each other, become a common electric potential, and a second group of electrodes which include one electrode among electrodes which are not electrically connected to the first group of electrodes, or at least two electrodes which are not electrically connected to the first group of electrodes and are electrically connected to each other so as to be a common electric potential without being adjacent to each other, in which the stacked organic light emitting elements are disposed at an interval apart from each other on the substrate and driven by an alternating current power source such that a form, in which a first group of electrodes of one stacked organic light emitting element among the stacked organic light emitting elements are directly connected to a second group of electrodes of another stacked organic light element, is continuously repeated. | 2015-05-28 |
20150144936 | ORGANIC LIGHT EMITTING DEVICE AND DISPLAY UNIT - An organic light emitting device capable of improving the light extraction characteristics while suppressing the driving voltage and improving the luminescent performance, and a display unit using it are provided. The organic light emitting device includes: a lamination structure that includes a cathode, a plurality of layers including a light emitting layer made of an organic material, and an anode including a metal thin film in this order, in which the cathode is reflective and the anode is semi-transparent to light generated in the light emitting layer; and a resonator structure that resonates the light generated in the light emitting layer between the cathode and the anode. | 2015-05-28 |
20150144937 | COMPOUND FOR ORGANIC OPTOELECTRONIC DEVICE, ORGANIC LIGHT EMITTING DIODE COMPRISING SAME, AND DISPLAY DEVICE COMPRISING ORGANIC LIGHT EMITTING DIODE - Provided are a compound represented by the following Chemical Formula 1 for an organic optoelectronic device, an organic light emitting diode including the same, and a display device including the organic light emitting diode. The structure of Chemical Formula 1 is described in the specification. | 2015-05-28 |
20150144938 | COMPOUND FOR ORGANIC OPTOELECTRONIC DEVICE, ORGANIC LIGHT EMITTING DIODE INCLUDING THE SAME AND DISPLAY INCLUDING THE ORGANIC LIGHT EMITTING DIODE - A compound for an organic optoelectronic device, an organic light emitting diode including the same, and a display device including the organic light emitting diode are disclosed and the compound for an organic optoelectronic device represented by a combination of the following Chemical Formulae 1 and 2 provides an organic light emitting diode having life-span characteristics due to excellent electrochemical and thermal stability, and high luminous efficiency at a low driving voltage. | 2015-05-28 |
20150144939 | THIN FILM TRANSISTOR ARRAY PANEL AND METHOD FOR MANUFACTURING THE SAME - A thin film transistor array panel includes: a gate line including a gate electrode; a first gate insulating layer on the gate line; a semiconductor layer on the first gate insulating layer and overlapping the gate electrode; a second gate insulating layer on the semiconductor layer and the first gate insulating layer, and an opening in the second gate insulating layer and through which the semiconductor layer is exposed; drain and source electrodes on the second gate insulating and semiconductor layers and facing each other; a first field generating electrode; and a second field generating electrode connected to the drain electrode. The semiconductor layer includes an oxide semiconductor layer, and first and second auxiliary layers on the oxide semiconductor layer and separated from each other. An edge of the drain and source electrodes is disposed inside an edge of the first and second auxiliary layers, respectively. | 2015-05-28 |
20150144940 | DISPLAY PANEL AND METHOD OF MANUFACTURING THE SAME - A display panel includes first to third test lines connected to the each of data lines, extending in the second direction, and arranged in the first direction, a first test pad electrically connected to the first test line, the first test pad and the first test line being formed from a same layer, a second test pad electrically connected to the second test line through a contact hole formed through a first insulation layer, and disposed adjacent to the first test pad in the second direction, a third test pad electrically connected to the third test line and disposed adjacent to the first test pad in the first direction, the third test pad and the third test line being formed from a same layer. | 2015-05-28 |
20150144941 | DISPLAY SUBSTRATE COMPRISING PIXEL TFT AND DRIVING TFT AND PREPARATION METHOD THEREOF - Disclosed is a display substrate including a driving unit on a substrate comprising a first thin film transistor and a display unit on the substrate being adjacent to the driving unit and comprising a second thin film transistor. | 2015-05-28 |
20150144942 | OXIDE THIN FILM TRANSISTOR AND ARRAY SUBSTRATE INCLUDING THE SAME - An oxide thin film transistor (TFT) includes an oxide semiconductor layer including a first semiconductor layer and a second semiconductor layer on the first semiconductor layer; a gate insulating layer on the oxide semiconductor layer; a gate electrode on the gate insulating layer; an interlayer insulating layer on the gate electrode; and a source electrode and a drain electrode on the interlayer insulating layer and contacting the oxide semiconductor layer, wherein a first reflectance of the first semiconductor layer is greater than a second semiconductor layer. | 2015-05-28 |
20150144943 | ARRAY SUBSTRATE AND METHOD OF FABRICATING THE SAME - An array substrate includes: a substrate; a thin film transistor including a gate electrode, an oxide semiconductor layer and source and drain electrodes, wherein a first insulating layer of an inorganic insulating material is disposed between the gate electrode and the oxide semiconductor layer, and wherein a second insulating layer of an inorganic insulating material is disposed between the oxide semiconductor layer and the source and drain electrodes; a passivation layer on the thin film transistor; a first electrode on the passivation layer in the pixel region; and a first hydrogen absorbing layer on at least one of top and bottom surfaces of the first insulating layer, top and bottom surfaces of the second insulating layer and top and bottom surfaces of the passivation layer, the first hydrogen absorbing layer including plurality of particles spaced apart from each other and including one of nickel, palladium and platinum. | 2015-05-28 |
20150144944 | Array Substrate Including Oxide Thin Film Transistor and Method of Fabricating the Same - An array substrate including: a gate barrier layer on a substrate; a gate line on the gate barrier layer, the gate line having a gate open portion exposing the gate barrier layer in a gate electrode region; a gate insulating layer on the gate line; an active layer on the gate insulating layer over the gate barrier layer in the gate electrode region; and source and drain electrodes spaced apart from each other on the active layer. | 2015-05-28 |
20150144945 | DISPLAY DEVICE - A transistor includes a gate electrode over a substrate, an oxide semiconductor film overlapping with the gate electrode, a gate insulating film in contact with one surface of the oxide semiconductor film, and a pair of conductive films in contact with the oxide semiconductor film. A capacitor includes a metal oxide film over the gate insulating film and in contact with one of the pair of conductive films, an inorganic insulating film, and a first light-transmitting conductive film over the inorganic insulating film. A first gate line serving also as a gate electrode is connected so as to be able to select three sub-pixels of four sub-pixels, and a second gate line is connected so as to be able to select the remaining one of the four sub-pixels and also one sub-pixel in the next row. | 2015-05-28 |
20150144946 | DISPLAY DEVICE - A display device that includes a capacitor with low power consumption even when the number of subpixels included in a pixel is increased is provided. The area of an opening in a subpixel that controls transmission of white light is smaller than the area of an opening in each of subpixels that control transmission of red light, green light, and blue light. A transistor included in each subpixel includes an oxide semiconductor film. The capacitor includes a first electrode and a second electrode. The first electrode is a metal oxide film in contact with an inorganic insulating film over the transistor. The second electrode is a light-transmitting conductive film that is over the inorganic insulating film and is electrically connected to the transistor. | 2015-05-28 |
20150144947 | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE - An object is to provide a method for manufacturing a highly reliable semiconductor device including a transistor with stable electric characteristics. A method for manufacturing a semiconductor device includes the steps of: forming a gate electrode over a substrate having an insulating surface; forming a gate insulating film over the gate electrode; forming an oxide semiconductor film over the gate insulating film; irradiating the oxide semiconductor film with an electromagnetic wave such as a microwave or a high frequency; forming a source electrode and a drain electrode over the oxide semiconductor film irradiated with the electromagnetic wave; and forming an oxide insulating film, which is in contact with part of the oxide semiconductor film, over the gate insulating film, the oxide semiconductor film, the source electrode, and the drain electrode. | 2015-05-28 |
20150144948 | SEMICONDUCTOR DEVICE - A semiconductor device in which the area of a circuit that is unnecessary during normal operation is small. The semiconductor device includes a first circuit and a second circuit. The first circuit includes a third circuit storing at least one pair of first data including a history of a branch instruction and a first address corresponding to the branch instruction; a fourth circuit comparing a second address of an instruction and the first address; and a fifth circuit selecting the first data of one pair among the at least one pair in accordance with a comparison result. The second circuit includes a plurality of sixth circuits having a function of generating a signal for testing operation of the first circuit in accordance with second data, and a function of storing the at least one pair together with the second circuit after the operation is tested. | 2015-05-28 |
20150144949 | Semiconductor Device and Manufacturing Method Thereof - A manufacturing method of a semiconductor device having a stacked structure in which a lower layer is exposed is provided without increasing the number of masks. A source electrode layer and a drain electrode layer are formed by forming a conductive film to have a two-layer structure, forming an etching mask thereover, etching the conductive film using the etching mask, and performing side-etching on an upper layer of the conductive film in a state where the etching mask is left so that part of a lower layer is exposed. The thus formed source and drain electrode layers and a pixel electrode layer are connected in a portion of the exposed lower layer. In the conductive film, the lower layer and the upper layer may be a Ti layer and an Al layer, respectively. The plurality of openings may be provided in the etching mask. | 2015-05-28 |
20150144950 | THIN FILM TRANSISTOR STRUCTURE HAVING BIG CHANNEL-WIDTH AND TFT SUBSTRATE CIRCUIT - The present invention discloses a thin film transistor (TFT) structure having big channel-width. The TFT structure comprises a gate, a source and a drain. The source and the drain are respectively be a spiral, and are symmetrical and corresponding to each other to form as a double spiral arrangement. By the source and the drain forming as a symmetrical and corresponding double spiral, the TFT of the present invention can increase the channel-width between the source and the drain, so as to increase width/length rate, so that the charge ability of the TFT can be increased. | 2015-05-28 |
20150144951 | THIN FILM TRANSISTOR ARRAY PANEL AND MANUFACTURING METHOD THEREOF - A thin film transistor array panel including: an insulation substrate, a gate line provided on the insulation substrate and including a gate electrode, a gate insulating layer provided on the gate line, a semiconductor layer provided on the gate insulating layer, and a source electrode and a drain electrode provided on the semiconductor layer and separated from each other, and the gate insulating layer includes a fluorinated silicon oxide (SiOF) layer, and the gate electrode, the semiconductor layer, the source electrode, and the drain electrode form a thin film transistor, and a threshold voltage shift value of the thin film transistor is substantially less than 4.9 V. | 2015-05-28 |
20150144952 | DISPLAY SUBSTRATE, METHOD OF MANUFACTURING THE SAME, AND DISPLAY DEVICE INCLUDING THE SAME - A display substrate, method of manufacturing the same, and a display device including the same are disclosed. In one aspect, a display substrate includes a first gate electrode formed on a base substrate, a scan line electrically connected to the first gate electrode, a gate insulation layer, an etch stop layer and a passivation layer formed on the base substrate to at least partially overlap the first gate electrode and the scan line, and a data line formed on the passivation layer to at least partially overlap the scan line. | 2015-05-28 |
20150144953 | TRANSISTORS WITH FIELD PLATES RESISTANT TO FIELD PLATE MATERIAL MIGRATION AND METHODS OF THEIR FABRICATION - An embodiment of a transistor includes a semiconductor substrate, spaced-apart source and drain electrodes coupled to the semiconductor substrate, a gate electrode coupled to the semiconductor substrate between the source and drain electrodes, a dielectric layer over the gate electrode and at least a portion of the semiconductor substrate, and a field plate structure over the dielectric layer, wherein the field plate structure includes a gold-containing material and one or more migration inhibiting materials. | 2015-05-28 |
20150144954 | METHOD FOR HETEROEPITAXIAL GROWTH OF III METAL-FACE POLARITY III-NITRIDES ON SUBSTRATES WITH DIAMOND CRYSTAL STRUCTURE AND III-NITRIDE SEMICONDUCTORS - The present invention discloses a method of heteroepitaxial growth enabling the successful growth of thin films of GaN and III-nitride semiconductor heterostructures of (0001) orientation with III metal-face polarity on diamond substrates being either polycrystalline or single crystal with various crystallographic orientations. The method uses a thin AlN nucleation layer on the diamond substrate with thickness equal or less than 5 nm, grown by Molecular Beam Epitaxy (MBE) using a nitrogen plasma source. The invention enables the development of very high power metal-face III-nitride devices, such as High Electron Mobility Transistors, on single crystal or polycrystalline diamond substrates. The method is also applicable for other element IV substrates with diamond crystal structure. | 2015-05-28 |
20150144955 | Isolated Gate Field Effect Transistor and Manufacture Method Thereof - An isolated gate field effect transistor and the manufacture method thereof. The isolated gate field effect transistor includes a substrate; a nitride transistor structure arranged on the substrate; a dielectric layer on the nitride transistor structure, where the dielectric layer includes a first dielectric layer, a second dielectric layer and a third dielectric layer and material of the second dielectric layer includes metal; a groove formed in a gate region and at least partially through the dielectric layer; a metal gate formed in the groove; and a source electrode and a drain electrode located at two ohmic contact regions. | 2015-05-28 |
20150144956 | GALLIUM NITRIDE SELF-SUPPORTED SUBSTRATE, LIGHT-EMITTING DEVICE AND MANUFACTURING METHOD THEREFOR - Provided is a self-supporting gallium nitride substrate useful as an alternative material for a gallium nitride single crystal substrate, which is inexpensive and also suitable for having a large area. This substrate is composed of a plate composed of gallium nitride-based single crystal grains, wherein the plate has a single crystal structure in the approximately normal direction. This substrate can be manufactured by a method comprising providing an oriented polycrystalline sintered body; forming a seed crystal layer composed of gallium nitride on the sintered body so that the seed crystal layer has crystal orientation mostly in conformity with the crystal orientation of the sintered body; forming a layer with a thickness of 20 μm or greater composed of gallium nitride-based crystals on the seed crystal layer so that the layer has crystal orientation mostly in conformity with crystal orientation of the seed crystal layer; and removing the sintered body. | 2015-05-28 |
20150144957 | ELECTRIC FIELD MANAGEMENT FOR A GROUP III-NITRIDE SEMICONDUCTOR DEVICE - A semiconductor device includes a substrate, a first active layer, a second active layer, at least first and second electrodes, an E-field management layer, and at least one injection electrode. The first active layer is disposed over the substrate. The second active layer is disposed on the first active layer such that a laterally extending conductive channel arises which extends in a lateral direction. The laterally extending conductive channel is located between the first active layer and the second active layer. The first and second electrodes are electrically connected to the first active layer. The E-field management layer, which reduces the electric-field gradients arising in the first and second active layers, is disposed over the second active layer. The injection electrode is electrically connected to the E-field management layer. | 2015-05-28 |
20150144958 | METHODS OF FORMING SEMICONDUCTOR STRUCTURES INCLUDING III-V SEMICONDUCTOR MATERIAL USING SUBSTRATES COMPRISING MOLYBDENUM, AND STRUCTURES FORMED BY SUCH METHODS - Methods of fabricating semiconductor structures include the formation of molybdenum nitride at one or more surfaces of a substrate comprising molybdenum, and providing a layer of III-V semiconductor material, such as GaN, over the substrate. Semiconductor structures formed by methods described herein may include a substrate comprising molybdenum, molybdenum nitride at one or more surfaces of the substrate, and a layer of GaN bonded to the molybdenum nitride. | 2015-05-28 |
20150144959 | LIGHT-EMITTING DEVICE - Disclosed is a light-emitting device ( | 2015-05-28 |
20150144960 | TAPERED GATE ELECTRODE FOR SEMICONDUCTOR DEVICES - The subject matter disclosed herein relates to metal-oxide-semiconductor (MOS) devices, such as silicon carbide (SiC) power devices (e.g., MOSFETs, IGBTs, etc.) In an embodiment, a semiconductor device includes a gate oxide layer disposed on top of a semiconductor layer. The semiconductor device also includes a gate electrode having a tapered sidewall. Further, the gate electrode includes a polysilicon layer disposed on top of the gate oxide layer and a metal silicide layer disposed on top of the polysilicon layer. | 2015-05-28 |
20150144961 | HIGH FREQUENCY DEVICE AND METHOD OF MANUFACTURING THE SAME - A high frequency device includes: a capping layer formed on an epitaxial structure; source and drain electrodes formed on the capping layer; a multilayer insulating pattern formed on entire surfaces of the source and drain electrodes and the capping layer in a step shape; a T-shaped gate passing through the multilayer insulating pattern and the capping layer to be in contact with the epitaxial structure; and a passivation layer formed along entire surfaces of the T-shaped gate and the multilayer insulating pattern. | 2015-05-28 |
20150144962 | COMPLEMENTARILY STRAINED FINFET STRUCTURE - A complementary fin field-effect transistor (FinFET) includes a p-type device having a p-channel fin. The p-channel fin may include a first material that is lattice mismatched relative to a semiconductor substrate. The first material may have a compressive strain. The FinFET device also includes an n-type device having an re-channel fin. The n-channel fin may include a second material having a tensile strain that is lattice mismatched relative to the semiconductor substrate. The p-type device and the n-type device cooperate to form the complementary FinFET device. | 2015-05-28 |
20150144963 | SILICON CARBIDE EPI-WAFER AND METHOD OF FABRICATING THE SAME - A method of fabricating an epi-wafer includes providing a wafer in a susceptor, and growing an epi-layer on the wafer. The growing of the epi-layer on the wafer includes a first process of supplying a first input quantity of a raw material to the susceptor, and a second process of supplying a second input quantity of the raw material to the susceptor. The first input quantity is smaller than the second input quantity. An epi-wafer includes a wafer and an epi-layer formed on the wafer. Surface defects of the wafer are 1 ea/cm | 2015-05-28 |
20150144964 | SILICON CARBIDE EPI-WAFER AND METHOD OF FABRICATING THE SAME - A method of fabricating an epi-wafer includes providing a wafer in a susceptor, performing a surface treatment on the wafer by heating the susceptor and supplying a surface treatment gas, and growing an epi-layer on the wafer. An epi-wafer includes a wafer, and an epi-layer formed on the wafer. Surface defects of the wafer are 0.5 ea/cm | 2015-05-28 |
20150144965 | SILICON CARBIDE SEMICONDUCTOR DEVICE AND FABRICATION METHOD OF SILICON CARBIDE SEMICONDUCTOR DEVICE - A p-type region, a p | 2015-05-28 |
20150144966 | SCHOTTKY DIODE WITH REDUCED FORWARD VOLTAGE - A semiconductor component includes a semiconductor body of a first conduction type and a metal layer on the semiconductor body, wherein the metal layer forms with the semiconductor body a Schottky contact along a contact surface. A doping concentration of the first conduction type on the contact surface varies along a direction of the contact surface. | 2015-05-28 |
20150144967 | SEMICONDUCTOR DEVICE - A semiconductor device includes a semiconductor layer made of first conductivity type SiC; a second conductivity type well region formed on the semiconductor layer and having a channel region; a first conductivity type source region formed on the well region and including a first region adjacent to the well region and a second region adjacent to the first region; a gate insulating film formed on the semiconductor layer and having a first portion that contacts the first region; a second portion that contacts the well region and that has a thickness that is the same as that of the first portion; and a third portion that contacts the second region and that has a thickness that is greater than that of the first portion; and a gate electrode formed on the gate insulating film and opposed to the channel region where a channel is formed through the gate insulating film. | 2015-05-28 |
20150144968 | METHOD OF STRESS INDUCED CLEAVING OF SEMICONDUCTOR DEVICES - A method of dicing semiconductor devices includes depositing a continuous first layer over the substrate, such that the first layer imparts a compressive stress to the substrate, and etching grooves in the first layer to increase local stress at the grooves compared to stress at the remainder of the first layer located over the substrate. The method also includes generating a pattern of defects in the substrate with a laser beam, such that a location of the defects in the pattern of defects substantially corresponds to a location of at least some of the grooves in the in the first layer, and applying pressure to the substrate to dice the substrate along the grooves. | 2015-05-28 |
20150144969 | LIGHT EMITTING DIODE PACKAGE, LIGHT SOURCE MODULE AND BACKLIGHT UNIT INCLUDING THE SAME - A light emitting diode package, a light source module and a backlight unit including the same are provided. A plurality of light emitting diode packages are arranged on a printed circuit board without interference therebetween, by forming lines therein. | 2015-05-28 |
20150144970 | Light Emitting Device - According to an exemplary embodiment, there is provided a light emitting device including a ceramic substrate, first to fourth connectors, a plurality of semiconductor light emitting elements, and a first metal layer. The ceramic substrate is provided with a first main surface including first to fourth sides and first to fourth corner portions, and the first main surface includes a mounting region, and first to fourth connector region provided respectively between the first to fourth corner portion and the mounting region. The plurality of semiconductor light emitting elements is provided on the mounting region. The first to fourth connectors are respectively provided on the first to fourth connector regions. A first metal layer is provided between the plurality of semiconductor light emitting elements and the ceramic substrate, and including first to fourth connector electrode portions electrically connected respectively to the first to fourth connectors. | 2015-05-28 |
20150144971 | CHIP SCALE LIGHT EMITTING DEVICE WITH METAL PILLARS IN A MOLDING COMPOUND FORMED AT WAFER LEVEL - Thick metal pillars are formed upon light emitting dies while the dies are still on their supporting wafer. A molding compound is applied to fill the space between the pillars on each die, and contact pads are formed atop the pillars. The metal pillars provide electrical contact between the contact pads and the electrical contacts of each light emitting die. The metal pillars maybe formed upon an upper metal layer of each die, and this upper metal layer maybe patterned to provide connections to individual elements within the die. | 2015-05-28 |
20150144972 | MATRIX LEADFRAME FOR LED PACKAGING - A leadframe ( | 2015-05-28 |
20150144973 | DISPLAY DEVICE - A display device having a first pixel electrode and a second pixel electrode whose areas are different from each other is provided. In the display device, the first pixel electrode and the second pixel electrode are electrically connected to a first transistor and a second transistor, respectively. Gates of the first transistor and the second transistor are electrically connected to each other. A potential is supplied to the first pixel electrode and the second pixel electrode through a wiring electrically connected to the first transistor and the second transistor. | 2015-05-28 |
20150144974 | Vertical Type AC-LED Device and Manufacturing Method Thereof - The present invention discloses a vertical AC LED element and fabrication method thereof, wherein the vertical AC LED element comprises a conductive substrate ( | 2015-05-28 |
20150144975 | LIGHT-EMITTING DEVICE - A light-emitting device comprises a substrate; and a semiconductor stack comprising a III-V group material formed on the substrate, wherein the substrate comprises a first amorphous portion adjacent to the semiconductor stack, and a portion having a material different from that of the first amorphous portion and away from the semiconductor stack, wherein the first amorphous portion has a first refractive index, the portion has a second refractive index, and the first refractive index is higher than the second refractive index and lower than a refractive index of the semiconductor stack. | 2015-05-28 |
20150144976 | LED WITH LIGHT DIVERGENT LENS - An LED includes a base, a chip mounted on the base and a lens covering the chip. The lens has a light incident face contacting the chip and a light emerging face away from the chip. The light emerging face includes a first face confronting the chip and a second face surrounding the first face. The first face is a conical face having a diameter gradually decreasing towards the chip, and the second face is a conical face having a diameter gradually increasing towards the chip. | 2015-05-28 |
20150144977 | LIGHT EMITTING DIPLAY DEVICE AND MANUFACTURING METHOD OF THE LIGHT EMITTING DISPLAY DEVICE - The present invention aims to control power consumption of a light emitting display device by reducing parasitic capacitance between wires in a drive circuit part of a periphery region. The light emitting display device of the present invention includes an insulation film arranged above a substrate, a first wiring arranged above the insulation film in a pixel region, a second wiring arranged above the insulation film in a periphery region of a periphery of the pixel region, a common electrode continuously arranged to the pixel region and the periphery region, a first insulation layer arranged between the first wiring and the common electrode, and a second insulation layer arranged between the second wiring and the common electrode and having a larger thickness than the first insulation layer. | 2015-05-28 |
20150144978 | Light Extraction Element - Described herein are elements for light emitting devices comprising: an emissive element comprising a host material and an emissive guest material and substantially free of light scattering material; and a light scattering element comprising either a non-emissive or an emissive material, wherein the light scattering element is between about 2.5% to about 60% by volume voids and the thickness ratio of light scattering element to the emissive element is at least 1 to about 2. | 2015-05-28 |
20150144979 | NANOSTRUCTURE LAYER AND LIGHT EMITTING DIODE WITH THE SAME - A nanostructure layer includes a number of nanostructures, wherein the number of nanostructures are aligned along a number of straight lines, a size of each of the number of nanostructures ranges from about 20 nanometers to about 100 nanometers, a distance between adjacent two nanostructures ranges from about 10 nanometers to about 300 nanometers, and each of the number of nanostructures includes a core and a shell coated on the core. A light emitting diode with the nanostructure layer is also provided. | 2015-05-28 |
20150144980 | LIGHT-EMITTING DEVICE AND MANUFACTURING METHOD THEREOF - The present disclosure provides a light-emitting device and manufacturing method thereof. The light-emitting device comprises: a metal connecting structure; a barrier layer on the metal connecting structure, the barrier layer comprising a first metal multilayer on the metal connecting structure and a second metal multilayer on the first metal multilayer; a metal reflective layer on the barrier layer; and a light-emitting stack electrically coupled to the metal reflective layer, wherein the first metal multilayer comprises a first metal layer comprising a first metal material and a second metal layer comprising a second metal material, and the second metal multilayer comprises a third metal layer comprising a third metal material and a fourth metal layer comprising a fourth metal material. | 2015-05-28 |
20150144981 | LIGHT EMITTING DIODE HAVING DISTRIBUTED BRAGG REFLECTOR - A light-emitting diode (LED) according to an exemplary embodiment includes a light-emitting structure arranged on a first surface of a substrate, the light-emitting structure including a first conductivity-type semiconductor layer, a second conductivity-type semiconductor layer, and an active layer interposed between the first conductivity-type semiconductor layer and the second conductivity-type semiconductor layer. A first distributed Bragg reflector is arranged on a second surface of the substrate opposite to the first surface, the first distributed Bragg reflector to reflect light emitted from the light-emitting structure. The first distributed Bragg reflector has a reflectivity of at least 90% with respect to blue, green, and red light. | 2015-05-28 |
20150144982 | LED PACKAGE AND MANUFACTURING PROCESS OF SAME - A LED package is formed of a substrate, an LED chip, an insulated layer, and a fluorescent adhesive layer. The substrate includes a positive contact and a negative contact. The LED chip is fixed to the substrate and includes a positive terminal and a negative terminal, the former of which is electrically connected with the positive contact and latter is electrically connected with the negative contact. The insulated layer is mounted to the surface of the substrate and surrounds the LED chip. The fluorescent adhesive layer is mounted to a surface of the insulated layer and covers the LED chip. In this way, the LED package can reduce the production cost and the whole size. | 2015-05-28 |
20150144983 | Light-Emitting Diode Device - A light-emitting diode device includes a carrier having at least one cavity, a light-emitting diode chip is arranged in a manner at least partly recessed in the at least one cavity, and an ESD protection element, which is formed by a partial region of the carrier. Furthermore, a light-emitting diode device includes a carrier having at least one cavity, a light-emitting diode chip, arranged on the carrier, and an electrical component arranged at least partly recessed in the at least one cavity. Furthermore, the light-emitting diode device includes an ESD protection element, which is formed by a partial region of the carrier. | 2015-05-28 |
20150144984 | SEMICONDUCTOR LIGHT-EMITTING DEVICE - A semiconductor light-emitting device comprises a semiconductor stack comprising a side, a first surface and a second surface opposite to the first surface, wherein the semiconductor stack further comprises a conductive via extending from the first surface to the second surface; a transparent conductive layer formed on the second surface; a first pad portion and a second pad portion formed on the first surface and electrically connected to the semiconductor stack; and an insulating layer formed between the first pad portion and the semiconductor stack and between the second pad portion and the semiconductor stack. | 2015-05-28 |
20150144985 | Electronic Device - An electronic device includes a base body, which has a top side and also an underside lying opposite the top side. The base body has connection locations at its underside. An electronic component is arranged at the base body at the top side of the base body. The base body has at least one side area having at least one point of inspection having a first region and second region. The second region is embodied as an indentation in the first region. The first and the second region contain different materials. | 2015-05-28 |
20150144986 | SOLID STATE LIGHTING DEVICES WITH ACCESSIBLE ELECTRODES AND METHODS OF MANUFACTURING - Various embodiments of light emitting dies and solid state lighting (“SSL”) devices with light emitting dies, assemblies, and methods of manufacturing are described herein. In one embodiment, a light emitting die includes an SSL structure configured to emit light in response to an applied electrical voltage, a first electrode carried by the SSL structure, and a second electrode spaced apart from the first electrode of the SSL structure. The first and second electrode are configured to receive the applied electrical voltage. Both the first and second electrodes are accessible from the same side of the SSL structure via wirebonding. | 2015-05-28 |
20150144987 | SILICONE RESIN COMPOSITION AND AN OPTICAL SEMICONDUCTOR DEVICE - One purpose is to provide a silicone resin composition which provides a cured product having a large Abbe's number and a high brightness. A silicone resin composition including (A-1) an organopolysiloxane having a three-dimensional crosslinked structure, at least two alkenyl groups, and at least one monovalent aromatic hydrocarbon group bonded to a silicon atom, (A-2) a linear organopolysiloxane having alkenyl groups at at least both terminals of a molecular chain and at least one monovalent aromatic hydrocarbon group bonded to a silicon atom, (B-1) a linear organohydrogen polysiloxane having at least one silphenylene skeleton in a molecular chain and hydrosilyl groups at least both terminals of the molecular chain, in an amount such that a ratio of the number of the hydrosilyl groups in component (B-1) to a total number of the alkenyl groups in components (A-1) and (A-2) is 0.5 to 2, and (C) a hydrosilylation catalyst in a catalytic amount. | 2015-05-28 |
20150144988 | Semiconductor Device and Insulated Gate Bipolar Transistor with Barrier Regions - In a semiconductor device a barrier region is sandwiched between a drift region and a charge carrier transfer region. The barrier and charge carrier transfer regions form a pn junction. The barrier and drift regions form a homojunction. A mean impurity concentration in the barrier region is at least ten times as high as an impurity concentration in the drift region. A control structure is arranged to form an inversion layer in the drift and barrier regions in an inversion state. No inversion layer is formed in the drift and barrier regions in a non-inversion state. | 2015-05-28 |
20150144989 | POWER SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME - A power semiconductor device may include: a first semiconductor region having a first conductivity type; a second semiconductor region having a second conductivity type and formed on the first semiconductor region; a third semiconductor region having the first conductivity type and formed in an upper portion of the second semiconductor region; a trench gate formed to penetrate from the third semiconductor region to the first semiconductor region, having a gate insulating layer formed on a surface thereof, and filled with a conductive material; and a fourth semiconductor region having the second conductivity type and formed to penetrate through the second semiconductor region. | 2015-05-28 |
20150144990 | POWER SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME - A power semiconductor device may include a first semiconductor region having a first conductivity type, a second semiconductor region having a second conductivity type formed on an upper portion of the first semiconductor region, a third semiconductor region having a first conductivity type formed in an inner portion of an upper portion of the second semiconductor region, a trench gate formed to penetrate from the third semiconductor region to the first semiconductor region and including a first insulating layer formed on a surface thereof, and a second insulating layer formed in a lower portion of the trench gate. | 2015-05-28 |
20150144991 | POWER MODULE PACKAGE AND METHOD OF MANUFACTURING THE SAME - Disclosed herein are a power module package and a method of manufacturing the same. The power module package includes first and second semiconductor devices mounted on sides of first and second lead frames, ends of which are separated from each other, respectively, a support pin corresponding to a mounting position of the first semiconductor device and formed adjacent to a lower portion of the first lead frame, and a molding portion formed to cover portions of the first and second lead frames and the first and second semiconductor devices. | 2015-05-28 |
20150144992 | POWER SEMICONDUCTOR DEVICE - A power semiconductor device may include: an active region having a current flowing through a channel formed therein at the time of a turn-on operation of the power semiconductor device; an termination region formed in the vicinity of the active region; a plurality of trenches formed in a length direction of the active region; a first conductivity type hole accumulating region formed below the channel in the active region; and a first conductivity type electric field limiting region formed in the termination region. The electric field limiting region is formed so as to at least partially cover a trench positioned at a boundary between the active region and the termination region. | 2015-05-28 |
20150144993 | POWER SEMICONDUCTOR DEVICE - A power semiconductor device may include: an active region having a current flowing through a channel formed therein at the time of a turn-on operation of the power semiconductor device; a termination region formed in the vicinity of the active region; a plurality of first trenches formed lengthwise in one direction in the active region; and at least one or more second trenches formed lengthwise in one direction in the termination region. The second trench has a depth deeper than that of the first trench. | 2015-05-28 |
20150144994 | POWER SEMICONDUCTOR DEVICE - A power semiconductor device may include: a first semiconductor layer having a first conductivity type; a second semiconductor layer formed on the first semiconductor layer, having a concentration of impurities higher than that of the first semiconductor layer, and having the first conductivity type; a third semiconductor layer formed on the second semiconductor layer and having a second conductivity type; a fourth semiconductor layer formed in an upper surface of the third semiconductor layer and having the first conductivity type; and trench gates penetrating from the fourth semiconductor layer into a portion of the first semiconductor layer and having gate insulating layers formed on surfaces thereof. The trench gates have a first gate, a second gate, and a third gate are sequentially disposed from a lower portion thereof, and the first gate, the second gate, and the third gate are insulated from each other by gate insulating films. | 2015-05-28 |
20150144995 | SEMICONDUCTOR DEVICE - In the reverse-conducting IGBT according to the present invention, an n-type buffer layer surrounds a p-type collector layer. A p-type separation layer surrounds an n-type cathode layer. The n-type buffer layer separates the p-type collector layer and the p-type separation layer from each other. The p-type separation layer separates the n-type cathode layer and the n-type buffer layer from each other. Therefore, the present invention makes it possible to reduce snapback. | 2015-05-28 |
20150144996 | Semiconductor ESD Device and Method of Making Same - A semiconductor device includes an SCR ESD device region disposed within a semiconductor body, and a plurality of first device regions of the first conductivity type disposed on a second device region of the second conductivity type, where the second conductivity type is opposite the first conductivity type. Also included is a plurality of third device regions having a sub-region of the first conductivity type and a sub-region of the second conductivity type disposed on the second device region. The first regions and second regions are distributed such that the third regions are not directly adjacent to each other. A fourth device region of the first conductivity type adjacent to the second device region and a fifth device region of the second conductivity type disposed within the fourth device region are also included. | 2015-05-28 |
20150144997 | Tunable FIN-SCR for Robust ESD Protection - One embodiment of the present invention relates to a silicon-controlled-rectifier (SCR). The SCR includes a longitudinal silicon fin extending between an anode and a cathode and including a junction region there between. One or more first transverse fins traverses the longitudinal fin at one or more respective tapping points positioned between the anode and the junction region. Other devices and methods are also disclosed. | 2015-05-28 |
20150144998 | Fin Structure of Semiconductor Device - A fin structure of a semiconductor device, such as a fin field effect transistor (FinFET), and a method of manufacture, is provided. In an embodiment, trenches are formed in a substrate, and a liner is formed along sidewalls of the trenches, wherein a region between adjacent trenches define a fin. A dielectric material is formed in the trenches. Portions of the semiconductor material of the fin are replaced with a second semiconductor material and a third semiconductor material, the second semiconductor material having a different lattice constant than the substrate and the third semiconductor material having a different lattice constant than the second semiconductor material. Portions of the second semiconductor material are oxidized. | 2015-05-28 |
20150144999 | Structure and Method For FinFET Device With Buried Sige Oxide - The present disclosure provides a semiconductor device that includes a substrate of a first semiconductor material; a fin feature having a first portion, a second portion and a third portion stacked on the substrate; an isolation feature formed on the substrate and disposed on sides of the fin feature; semiconductor oxide features including a second semiconductor material, disposed on recessed sidewalls of the second portion, defining dented voids overlying the semiconductor oxide features and underlying the third portion; and a gate stack disposed on the fin feature and the isolation feature. The gate stack includes a gate dielectric layer extended into and filling in the dented voids. The first and third portions include the first semiconductor material having a first lattice constant. The second portion includes the second semiconductor material having a second lattice constant different from the first lattice constant. | 2015-05-28 |
20150145000 | INTEGRATED CIRCUITS WITH SHALLOW TRENCH ISOLATIONS, AND METHODS FOR PRODUCING THE SAME - Integrated circuits with electrical components near shallow trench isolations and methods for producing such integrated circuits are provided. The method includes forming a trench is a substrate, where the trench has a trench surface. A barrier layer including silicon and germanium is formed overlying the trench surface. A shallow trench isolation is then formed with a core overlying the barrier layer, where the core includes a shallow trench isolation insulator. | 2015-05-28 |
20150145001 | SELECTIVE NANOSCALE GROWTH OF LATTICE MISMATCHED MATERIALS - Exemplary embodiments provide materials and methods of forming high-quality semiconductor devices using lattice-mismatched materials. In one embodiment, a composite film including one or more substantially-single-particle-thick nanoparticle layers can be deposited over a substrate as a nanoscale selective growth mask for epitaxially growing lattice-mismatched materials over the substrate. | 2015-05-28 |