22nd week of 2012 patent applcation highlights part 12 |
Patent application number | Title | Published |
20120132816 | METHOD TO PREPARE A SCINTILLATOR LAYER FOR APPLICATION ONTO A PHOTOSENSOR LAYER TO PRODUCE AN X-RAY DETECTOR OR ELEMENT THEREOF - A scintillator layer is applied onto a photosensor layer to produce an x-ray detector or an x-ray detector element for imaging detection of ionizing radiation. The production process is improved by, in the production of the scintillator layer, an adhesive layer with a protective layer is applied onto the scintillator layer. This can occur layer by layer or a transfer adhesive tape that already includes the protective layer as a protective film can also be used. | 2012-05-31 |
20120132817 | ENCAPSULATED PHOTOMULTIPLIER DEVICE OF SEMICONDUCTOR MATERIAL, FOR USE, FOR EXAMPLE, IN MACHINES FOR PERFORMING POSITRON-EMISSION TOMOGRAPHY - An embodiment of a photomultiplier device is formed by a base substrate of insulating organic material forming a plurality of conductive paths and carrying a plurality of chips of semiconductor material. Each chip integrates a plurality of photon detecting elements, such as Geiger-mode avalanche diodes, and is bonded on a first side of the base substrate. Couplings for photon-counting and image-reconstruction units are formed on a second side of the base substrate. The first side of the base substrate is covered with a transparent encapsulating layer of silicone resin, which, together with the base substrate, bestows stiffness on the photomultiplier device, preventing warpage, and covers and protects the chips. | 2012-05-31 |
20120132818 | LOW-INTERFERENCE SENSOR HEAD FOR A RADIATION DETECTOR, AS WELL AS A RADIATION DETECTOR WHICH CONTAINS THIS LOW-INTERFERENCE SENSOR HEAD - The invention relates to a low interference sensor head for a radiation detector and a radiation detector containing said low interference sensor head. Preferably, the radiation detector according to the invention is an X-ray detector. The invention further relates to the use of the low interference sensor head or the radiation detector, in particular of the X-ray detector for radiation analysis, in particular for (energy dispersive) X-ray analysis in microscopy using optics for charged particles. | 2012-05-31 |
20120132819 | Neutron Porosity Logging Tool Using Microstructured Neutron Detectors - A neutron porosity measurement device uses semiconductor detectors located at different distances from a cavity configured to accommodate a neutron source. Each of the semiconductor detectors includes (i) a semiconductor substrate doped to form a pn junction, and having microstructures of neutron reactive material formed to extend from a first surface inside the semiconductor substrate, and (ii) electrodes, one of which is in contact with the first surface of the semiconductor substrate and another one of which is in contact with a second surface of the semiconductor substrate, the second surface being opposite to the first surface. The electrodes are configured to acquire an electrical signal occurring when a neutron is captured inside the semiconductor substrate. | 2012-05-31 |
20120132820 | RADIOGRAPHIC IMAGE DETECTING APPARATUS AND RADIOGRAPHIC IMAGE CAPTURING SYSTEM - A radiographic image detecting apparatus and a radiographic image capturing system are provided. The radiographic image detecting apparatus includes a plurality of photoelectric conversion elements for generating electric charge by emission of radiation, a bias line through which a bias voltage is supplied to the photoelectric conversion elements, a power supply for applying the bias voltage to the photoelectric conversion elements through the bias line, a current detector for detecting a bias current flowing through the bias line, and a reading circuit including an amplifying circuit. The current detector includes a current mirror circuit connected between the bias line connected to the photoelectric conversion elements and the power supply. | 2012-05-31 |
20120132821 | RADIATION IMAGE DETECTING DEVICE AND CONTROL METHOD THEREOF - When all TFTs are turned on, an electric signal is compared with a first threshold value. If the electric signal is equal to or more than the first threshold value, a first judgment unit judges that X-ray irradiation has been started. A second judgment unit compares second and third threshold values with a first-order differentiation value of an electric signal that is outputted in a state of turning off all the TFTs. If the first-order differentiation value is within or out of a range defined by the second and third threshold values throughout a verification period, the second judgment unit verifies that the judgment of the first judgment unit is correct. When the judgment of the first judgment unit is verified to be correct, the TFTs are kept turned off, and an FPD continuously carries out charge accumulation operation for capturing an X-ray image. | 2012-05-31 |
20120132822 | RADIATION DETECTION ELEMENT AND RADIOGRAPHIC IMAGING DEVICE - The present invention provides a radiation detection element and a radiographic imaging device that may provide optimal resolution that corresponds to the purpose of imaging and to imaging speed, and that may suppress increase in device size. Namely, TFTs of plural pixels in a column direction are connected to the same signal lines. When a moving image is imaged, a control signal is output via a control line, the TFTs of the pixels are turned on, and the charges are read-out from sensor sections. Since the two pixels×two pixels are operated as one pixel and the charges are extracted, resolution may be lowered when compared with a still image and a frame rate may be improved. | 2012-05-31 |
20120132823 | RADIATION DETECTION SYSTEM AND METHOD OF ANALYZING AN ELECTRICAL PULSE OUTPUT BY A RADIATION DETECTOR - A radiation detection system can include a photo sensor to receive light from a scintillator via an input and to send an electrical pulse at an output in response to receiving the light. The radiation detection system can also include a pulse analyzer that can determine whether the electrical pulse corresponds to a neutron-induced pulse, based on a ratio of an integral of a particular portion of the electrical pulse to an integral of a combination of a decay portion and a rise portion of the electrical pulse. Each of the integrals can be integrated over time. In a particular embodiment, the pulse analyzer can be configured to compare the ratio with a predetermined value and to identify the electrical pulse as a neutron-induced pulse when the ratio is at least the predetermined value. | 2012-05-31 |
20120132824 | RADIOGRAPHIC IMAGE DETECTING APPARATUS AND RADIOGRAPHIC IMAGE CAPTURING SYSTEM - A radiographic image detecting apparatus and a radiographic image capturing system are provided. The radiographic image detecting apparatus includes photoelectric conversion elements for generating electric charge by emission of radiation, a bias line through which a bias voltage is supplied to the photoelectric conversion elements, a power supply for applying the bias voltage to the photoelectric conversion elements through the bias line, a current detector for detecting a bias current flowing through the bias line based on a voltage drop across a resistor inserted in the bias line, a first amplifying circuit, a second amplifying circuit connected to an output of the first amplifying circuit, and a controller for correcting the electric signal by increasing a gain of the second amplifying circuit depending on decrease in a sensitivity of the photoelectric conversion element, the decrease being caused by the voltage drop. | 2012-05-31 |
20120132825 | RADIATION IMAGE CAPTURING DEVICE - Disclosed is a radiation image capturing device including a control section which detects at least a start of irradiation based on a current value of a current detected by a current detection section, wherein the control section applies an ON-state voltage having a predetermined voltage value from a scan driving section to a switch section via each of scan lines simultaneously so as to perform reset processing of each of radiation detection elements before radiation image capturing, and thereafter, decreases the voltage value of the ON-state voltage simultaneously, monitors the current value outputted from the current detection section while keeping the decreased voltage value of the ON-state voltage, and waits for the start of the irradiation. | 2012-05-31 |
20120132826 | PARTICLE BEAM IRRADIATION APPARATUS AND PARTICLE BEAM THERAPY SYSTEM - There is provided a particle beam irradiation apparatus in which two or more pairs of scanning electromagnets are utilized so that scanning of a charged particle beam can be performed with a high accuracy and with a high flexibility in the speed, from a low speed to a high speed. In a particle beam irradiation apparatus that scans an incident charged particle beam on X-direction and Y-direction (two-direction) desired orbits perpendicular to the travelling direction of the charged particle beam and irradiates the charged particle beam onto an irradiation subject, there are provided two or more pairs of scanning electromagnets that scan a charged particle beam in the two directions; the desired orbit is given by time-series desired orbit data in which desired irradiation positions corresponding to time are determined; and command values for respective scanning electromagnets in the two or more pairs of scanning electromagnets are generated based on plural pieces of data obtained by frequency-separating the time-series desired orbit data. | 2012-05-31 |
20120132827 | ION ACCELERATION METHOD, ION ACCELERATION APPARATUS, ION BEAM IRRADIATION APPARATUS, AND ION BEAM IRRADIATION APPARATUS FOR MEDICAL USE - A laser light is emitted from a laser light source and focused inside a cluster-gas. A nozzle is installed in a vacuum. The nozzle is configured so that a jet of gas can be jetted from its top into the vacuum. The gas is a mixed gas of helium and carbon dioxide. The gas jetted into the vacuum undergoes adiabatic expansion with a steep cooling, which produces the cluster-gas. In the cluster gas, a large number of CO | 2012-05-31 |
20120132828 | HOLDER FOR AN ELECTRON MICROSCOPY SAMPLE CARRIER | 2012-05-31 |
20120132829 | ROBOTIC ARM AND TRANSPORTING DEVICE WITH THE SAME - The present invention discloses a robotic arm including a supporting member, a cavity body and a telescopic member. The cavity body includes a gate. The cavity body accommodates the supporting member. The telescopic member is connected with the supporting member for driving the supporting member to extend out of or back to the cavity body through the gate. The present invention discloses a transporting device with the robotic arm. The robotic arm and the transporting device with the robotic arm utilizes the structure of the cavity body to maintain the cleanliness during transporting plates. | 2012-05-31 |
20120132830 | OPTICAL DETECTOR FOR DETECTING RADIATION - The present disclosure provides an optical detector for detecting radiation. The optical detector includes an optical light guide that incorporates a sensing region. The sensing region includes a sensing material that emits luminescence light when the sensing material is exposed to suitable ionizing radiation and accrues trapped charge which is released and produces optically stimulated luminescence (OSL) when the sensing material is optically stimulated. The optical detector also includes a light source for optically stimulating the sensing material and a light detector for detecting the OSL. The optical light guide is arranged to guide light through the sensing region and between the sensing region and the luminescence light detector. | 2012-05-31 |
20120132831 | ENERGY APPLICATION DEVICE AND ENERGY APPLICATION METHOD - An energy application device applies optical energy on an adhesion sheet by a light radiator and, subsequently, applies heat energy on the adhesion sheet by a heater. With this arrangement, even the adhesion sheet, which includes an adhesive layer having an energy barrier that cannot be overcome only with optical energy, is enabled to start a photoreaction by overcoming an energy barrier with the heat energy from the heater. | 2012-05-31 |
20120132832 | PASSIVE TERAHERTZ RADIATION SOURCE - The invention concerns a passive terahertz radiation source configured to emit electromagnetic radiation having frequency in the range of 10 GHz to 50 THz and a method for generating a terahertz radiation. The passive terahertz radiation source comprises: a source of a pulsed excitation light; an emitter comprising one or more emitter elements, each emitter element comprising a semiconductor layer being arranged such that at least a portion of a first major surface of said semiconductor layer is exposed to the excitation light, wherein each emitter element is configured such that upon exposure to the excitation light, a gradient of the charge carrier density is generated in the semiconductor layer in the area of transition between a first area of the semiconductor layer and a second area of the semiconductor layer, the gradient being substantially parallel to the first major surface of the semiconductor layer. | 2012-05-31 |
20120132833 | COLLIMATOR FOR A RADIATION DETECTOR AND METHOD FOR MANUFACTURING SUCH A COLLIMATOR AS WELL AS METHOD FOR MANUFACTURING A RADIATION DETECTOR COMPRISING COLLIMATORS - A collimator is disclosed for a radiation detector including at least three spacing elements arranged on a radiation exit face of the collimator. In at least one embodiment, they are embodied so as to mount the collimator in a stable manner with respect to a radiation converter of the radiation detector. The at least three spacing elements enable a very precise and stable alignment of the collimator in respect of the radiation converter despite manufacturing-related curves or unevennesses in the radiation exit face and/or the mounting surface on the part of the radiation converter. At least one embodiment of the invention also relates to a manufacturing method for such a collimator, as well as a method for manufacturing a radiation detector. | 2012-05-31 |
20120132834 | 2D Collimator For A Radiation Detector And Method For Manufacturing Such A 2D Collimator - A 2D collimator is disclosed for a radiation detector. In at least one embodiment, the 2D collimator includes 2D collimator modules arranged in series, wherein adjacent 2D collimator modules are glued together to establish a fixed mechanical connection to facing module sides, and wherein, on their free-remaining side, the outer 2D collimator modules have a retaining element for mounting the 2D collimator opposite a detector mechanism. A method for manufacturing such a 2D collimator is also disclosed. | 2012-05-31 |
20120132835 | Control Valve for Pressure Reduction - A control valve for pressure reduction, in particular for liquids containing solids and having an inlet, an outlet and a channel between the inlet and outlet, wherethe channel is formed as an elastic through-flow channel with a free line cross section which can be reduced along its longitudinal axis over an extended line section. | 2012-05-31 |
20120132836 | ACTUATING MECHANISM OF A GAS VALVE UNIT - A gas valve unit for adjusting a volumetric gas flow supplied to a gas burner of a gas appliance, in particular a gas cooking appliance, includes at least two open/close valves which can be actuated by moving at least one magnetically active body, in particular a permanent magnet, relative to the open/close valves. For actuating an open/close valve, a position of the magnetically active body, which is preferably implemented in the form of a permanent magnet, can be varied relative to the shut-off body of the open/close valve. | 2012-05-31 |
20120132837 | HYDRAULIC CONTROL APPARATUS AND METHOD FOR MANUFACTURING THE SAME - A hydraulic control apparatus is disclosed which includes: a base body; and a housing to be fixed to one surface of the base body. The housing includes an opening facing the one surface of the base body. The opening includes a flange portion formed on and projected outwardly from an opening edge portion. The flange portion includes a screw-formed housing fixing hole for fixing the housing to the base body using a fastening member and a reference hole for provisionally fixing the housing when assembling parts to the housing. The reference hole is formed by lightening the flange portion and arranged parallel to the housing fixing hole. | 2012-05-31 |
20120132838 | MANUAL TO AUTOMATIC VALVE CONVERSION DEVICE - An apparatus and method for automating the operation of a manual control valve upon the occurrence of a specified condition includes a valve handle engaging member mounted on an operating shaft turned by a motor held by a housing or support which is mountable to the manual valve body or associated conduit. The motor is operated by a motor control circuit when a sensor detects the condition. The structure and method of mounting may include a quick disconnect mechanism. The control circuit may operate at different power levels depending on the state of the sensor. | 2012-05-31 |
20120132839 | NEEDLE VALVE - Disclosed herein is an improved needle valve, where, in some preferred embodiments, the needle valve includes a stem having a ball linkage and a seat having a ball linkage housing. The ball linkage can be snap-fit to the seat, and the ball linkage and ball linkage housing cooperate to form a ball-and-socket joint. In some embodiments, an axis is formed at least in part by the stem, and the ball-and-socket joint allows rotation of the seat about the axis and inhibits rotation of the seat about another axis. A gap may be provided between the seat and the stem to accommodate deformation of the seat. Also disclosed herein is an improved needle valve, where, in some preferred embodiments, a stem and a handle are provided with mating geometry and a biased snap-fit mechanism to facilitate ease of assembly. | 2012-05-31 |
20120132840 | NEEDLE VALVE - A needle valve includes a body, a needle assembly sized to be received in the body, and a handle sized to move the needle assembly relative to the body. A captive screw may be provided and is sized to mount the handle to the needle assembly. Further, a packing gland may be provided and is sized to be received in the body and sized to cover a portion of the needle assembly. An inert material, such as a nylon patch, is applied to a portion of the packing gland to lock the packing gland within the body. The needle valve could include a two piece, non-rotating stem. | 2012-05-31 |
20120132841 | VALVE SPRING RETAINER FOR AN INTERNAL COMBUSTION ENGINE AND A METHOD OF MANUFACTURING THE SAME - Oxide film formed on a spring-retaining flange by heat treatment gets unlikely to peel off, thereby improving wear resistance of a contact surface of the spring-retaining flange with a valve spring. The oxide film | 2012-05-31 |
20120132842 | Metal Seat Seal With Flexible Sealing Edge - A gate valve seat has structure formed on it to provide a sealing edge or lip which flexes when loaded. The lip forms a dual seal against portions of the gate valve body when the seat is placed under load. | 2012-05-31 |
20120132843 | USE OF COMPOSITE MATERIALS BASED ON CARBON NANOTUBES AS THICKENING AGENTS FOR AQUEOUS SOLUTIONS - The present invention relates to the use of composite materials as thickening agents for aqueous solutions, said material comprising carbon nanotubes (CNTs) and at least one hydrophilic (co)polymers. The invention relates more particularly to the use of the materials described above as thickening agents n one of the fields chosen: from the following: the papermaking field, the oil field and also the fields of paint, water treatment, detergents, ceramics, cements, or hydraulic binders, civil engineering, inks and varnishes, and textile sizing. | 2012-05-31 |
20120132844 | Process and Composition for Froth Flotation - A method for conducting froth flotation using a collector which is primarily hydrocarbon in nature or is a mixture of hydrocarbons with certain oxygenates, the collectors being substantially free of polynuclear aromatics, sulfur and nitrogen. | 2012-05-31 |
20120132845 | EXPANDABLE VINYL AROMATIC POLYMERS AND PROCESS FOR THE PREPARATION THEREOF - The present invention is an expandable vinyl aromatic polymer which comprises: | 2012-05-31 |
20120132846 | PIEZOELECTRIC POLYMER MATERIAL AND METHOD FOR PRODUCING SAME - The invention provides a piezoelectric polymer material comprising a helical chiral polymer having a weight average molecular weight of from 50,000 to 1,000,000 and optical activity, the piezoelectric polymer material having: crystallinity as obtained by a DSC method of from 20% to 80%; a transmission haze with respect to visible light of 50% or less; and a product of the crystallinity and a standardized molecular orientation MORc, which is measured with a microwave transmission-type molecular orientation meter at a reference thickness of 50 μm, of from 40 to 700. | 2012-05-31 |
20120132847 | MAGNETIC MATERIAL COMPOSITION FOR CERAMIC ELECTRONIC COMPONENT, METHOD OF MANUFACTURING THE SAME, AND CERAMIC ELECTRONIC COMPONENT USING THE SAME - A magnetic material composition for ceramic electronic components that is excellent in sintering properties and magnetic properties (in particular, a Q-factor) and a manufacturing method thereof, and a ceramic electronic component using the magnetic material composition are provided. The magnetic material composition includes Ni—Zn—Cu ferrite powder formed of 47.0 to 49.5 parts by mole of a mixture of iron oxide (Fe | 2012-05-31 |
20120132848 | WORKING FLUID COMPOSITION FOR REFRIGERATOR MACHINE AND REFRIGERATING MACHINE OIL - The present invention provides a working fluid composition for a refrigerator machine comprising a base oil comprising an ether-based compound, a carbodiimide compound, and an unsaturated fluorinated hydrocarbon refrigerant. The present invention also provides a refrigerating machine oil comprising a base oil containing an ether-based compound and a carbodiimide compound, the refrigerating machine oil being used together with an unsaturated fluorinated hydrocarbon refrigerant. | 2012-05-31 |
20120132849 | ELECTROACTIVE PARTICLES, AND ELECTRODES AND BATTERIES COMPRISING THE SAME - Provided herein is a coated electroactive particle, comprising i) an electroactive agglomerated particle that comprises a first and second electroactive materials; and ii) a polymeric overcoating on the surface of the electroactive agglomerated particle. Also provided herein is a coated electroactive particle, comprising i) an agglomerated particle that comprises subparticles of a first electroactive material and subparticles of a second electroactive material; and ii) a polymeric overcoating on the surface of the electroactive agglomerated particle. | 2012-05-31 |
20120132850 | HYDROGEN STORAGE MATERIALS - The invention provides a hydrogen storage material consisting essentially of a hydride of lithium and magnesium, the material having the general formula: Li | 2012-05-31 |
20120132851 | MAT OF MINERAL FIBERS INCLUDING AN AGENT CAPABLE OF TRAPPING FORMALDEHYDE AND MANUFACTURING PROCESSES - The present invention relates to a mat of mineral fibers which comprises an agent capable of trapping formaldehyde present in particular in dwellings or offices and transportation vehicles. | 2012-05-31 |
20120132852 | METAL ADSORBENT CONTAINING CHELATING POLYMER - A metal adsorbent which can adsorb a wide variety of metals, can conform to various uses, and adsorbs metals in large amounts. Metal adsorbents in various forms, which have the property of highly efficiently adsorbing metals, are produced by (a) a method in which a polyamine polymer is chemically bonded and immobilized to a porous support, (b) a method in which a polyamine polymer is blended into a solution of a raw material for fibers and the mixture is formed into fibers by wet-spinning or dry spinning, and (c) a method in which a polyamine polymer is blended into a solution of a film-forming polymer and the mixture is formed into a film by a method of film formation from solution. | 2012-05-31 |
20120132853 | METHOD OF PROTECTING MEMBRANES - The present invention relates to a method of protecting membranes by treatment with an aqueous solution containing at least one water-soluble, nucleophilic compound, and the use of this aqueous solution for protecting matrices. | 2012-05-31 |
20120132854 | LIQUID CRYSTAL COMPOUND AND LIQUID CRYSTAL MIXTURE - A LC compound and a LC mixture are provided. The LC mixture includes a compound represented by (I) and at least one compound selected from a group consisting of compounds represented by (II) to (IV): | 2012-05-31 |
20120132855 | LIQUID CRYSTAL COMPOSITION AND LIQUID CRYSTAL DISPLAY DEVICE - To provide a liquid crystal composition exhibiting a blue phase, which enables higher contrast, and a liquid crystal display device including the liquid crystal composition. The liquid crystal composition contains a chiral agent and liquid crystal containing a compound having three electron-withdrawing groups as end groups of a structure where a plurality of rings including at least one aromatic ring is linked to each other directly or with a linking group laid therebetween. The peak of the diffracted wavelength on the longest wavelength side in the reflectance spectrum of the liquid crystal composition is less than or equal to 450 nm, preferably less than or equal to 420 nm. Further, a liquid crystal display device can be provided using the liquid crystal composition. | 2012-05-31 |
20120132856 | OXIDE LUMINESCENT MATERIALS ACTIVATED BY TRIVALENT THULIUM AND THEIR PREPARATIONS - The present invention relates to oxide luminescent materials activated by trivalent thulium and their preparations. The luminescent materials are the compounds with the following general formula: (RE | 2012-05-31 |
20120132858 | Solvent Composition Based on an Oxide of an Organic Sulfide with Masked Odour - The invention relates to solvent compositions predominantly comprising at least one oxide of an organic sulfide, more particularly dimethyl sulfoxide, to which is added at least one odour-masking agent comprising at least one compound selected from monoesters, diesters or triesters, alcohols, ketones, aldehydes and terpenes. | 2012-05-31 |
20120132859 | ELECTRODE COMPOSITE - “A composite electrode includes a mixture of active matter (AM) particles and EC material particles generating an electronic conductivity, the mixture being supported by an electrical lead forming a DC current collector. The electrode can be manufactured by a method which consists of modifying the AM particles and the EC particles so as to react with each other and with the material of the collector in order to form covalent and electrostatic bonds between said particles, as well as between the particles and the current collector, and then placing the different constituents in contact.” | 2012-05-31 |
20120132860 | PROCESS FOR PREPARING PRECURSORS FOR TRANSITION METAL MIXED OXIDES - A process for preparing transition metal mixed oxide precursors, including:
| 2012-05-31 |
20120132861 | ELECTRODE MATERIAL AND ELECTRODE CONTAINING THE ELECTRODE MATERIAL - The electrode material includes metal oxide nanoparticles formed by applying shear force and centrifugal force to reactants containing a reaction inhibitor in a rotating reaction vessel during a chemical reaction; and carbon nanotubes with a specific area of 600 to 2600 m | 2012-05-31 |
20120132862 | CARBON NANOTUBE DISPERSION AND METHOD OF PREPARING TRANSPARENT ELECTRODE USING THE CARBON NANOTUBE DISPERSION - Provided is a carbon nanotube dispersion including: carbon nanotubes, a solvent, and a dispersant, in which a mutifunctional ethylene oxide-propylene oxide block copolymer acts as the dispersant. The carbon nanotube dispersion provides excellent dispersion stability in aqueous and organic systems. Therefore, the carbon nanotube dispersion is suitable for a transparent electrode. | 2012-05-31 |
20120132863 | CONDUCTIVE POLYMER-CARBON NANOTUBE COMPOSITE AND MANUFACTURING METHOD THEREOF - Provided are a conductive polymer-carbon nanotube composite including a carbon nanotube and a conductive polymer filled therein, and a method of manufacturing the same. The conductive polymer-carbon nanotube composite where a conductive polymer is filled in a carbon nanotube is manufactured by introducing a monomer of the conductive polymer into the carbon nanotube using a supercritical fluid technique and polymerizing the monomer. The conductive polymer-carbon nanotube composite is a novel nano-structure material which can overcome limitations that conventional materials may have, and thus can be applied to various applications such as sensors, electrode materials, nanoelectronic materials, etc. | 2012-05-31 |
20120132864 | CARBON NANOFIBER/CARBON NANOCOIL - COATED SUBSTRATE AND NANOCOMPOSITES - A composition includes a substrate and a carbon filament where the carbon filament has a first end in contact with the substrate and a second end that is distal to the substrate. The carbon filament may be a carbon nanofiber or carbon nanocoil. The substrate may be a glass fiber and the carbon filament may be radially attached to the glass fiber. | 2012-05-31 |
20120132865 | ELECTROCONDUCTIVE POLYAMIDE RESIN COMPOSITION - There is provided an electroconductive polyamide resin composition comprising: (a) a polyamide resin component obtained from a dicarboxylic acid component comprising oxalic acid and a diamine component comprising a diamine having 4 to 12 carbon atoms, and (b) a fine carbon fiber dispersed in the resin component, wherein a graphite-net plane consisting solely of carbon atoms forms a temple-bell-shaped structural unit comprising closed head-top part and body-part with open lower-end, 2 to 30 of the temple-bell-shaped structural units are stacked sharing a common central axis to form an aggregate, and the aggregates are connected in head-to-tail style with a distance to form the fiber. | 2012-05-31 |
20120132866 | ELECTROCONDUCTIVE RESIN COMPOSITION - There is provided an electroconductive resin composition comprising: (a) a polyamide resin, (b) a polyphenylene ether resin, and (c) a fine carbon fiber dispersed in the resin component, wherein a graphite-net plane consisting solely of carbon atoms forms a temple-bell-shaped structural unit comprising closed head-top part and body-part with open lower-end, 2 to 30 of the temple-bell-shaped structural units are stacked sharing a common central axis to form an aggregate, and the aggregates are connected in head-to-tail style with a distance to form the fiber. The composition has a high electroconductivity while upholding a high moldability, mechanical property and durability in the polyamide-polyphenylene ether resin. | 2012-05-31 |
20120132867 | SEMICONDUCTOR MATERIALS AND METHODS OF PRODUCING THEM - A method of producing particles containing metal oxide for use in semiconductor devices may include heating metal-containing particles in a flame produced by a mixture of oxygen and a fuel component comprising at least one combustible gas selected from hydrogen and hydrocarbons. The oxygen may be present in the mixture in a proportion of not less than 10 mole % below, and not more than 60 mole % above, a stoichiometric amount relative to the fuel component, so as to oxidize metal in at least an outer shell of the particles. The method may include cooling the oxidized particles by feeding them into a liquid, collecting the cooled oxidized particles; and providing a distance between entry of the particles into the flame and collection of the particles of at least 300 mm. | 2012-05-31 |
20120132868 | PROCESS FOR PREPARING PRECURSORS FOR TRANSITION METAL MIXED OXIDES - Process for preparing precursors for transition metal mixed oxides, wherein
| 2012-05-31 |
20120132869 | ELECTRICAL CONTACT MATERIAL OF SILVER MATRIX CAPABLE OF RESISTING ARC EROSION AND CONTAINING NO CADMIUM-COMPOSITE - In an electric contact material of silver matrix capable of resisting arc erosion and containing no cadmium-composite, an Ag—(SnO | 2012-05-31 |
20120132870 | Indeno-Fused Naphthopyrans Having Ethylenically Unsaturated Groups - The present invention relates to indeno-fused naphthopyrans, and in particular indeno[2′,3′:3,4]naphtho[1,2-b]pyrans having certain groups bonded to the 3, 6, 7, 11, and 13 positions thereof. The indeno-fused naphthopyrans of the present invention have an ethylenically unsaturated group selected from (C | 2012-05-31 |
20120132871 | FRESNEL LENS SHEET FOR SOLAR CONCENTRATION AND DESIGN METHOD THEREFOR - A design method for an optical sheet for solar concentration and an optical sheet for solar concentration obtained by means of the design method are disclosed. The design method is characterized in that, for a resin optical sheet for solar concentration containing an ultraviolet absorber in a base material thereof, an amount of the ultraviolet absorber to be contained in the base material is determined such that: in an accelerated degradation test by means of a metal-halide-lamp weathering test (device specification: JTM G 01:2000, Japan Testing Machinery Association), decrease in average transmittance in a wavelength range of 400 nm to 1850 nm after testing for an irradiation time T | 2012-05-31 |
20120132872 | Jacking Mechanism - A jacking mechanism for industrial equipment includes an insert securable in a casing hole of a first casing half of an item of industrial equipment and a jacking bolt insertable in the insert. The jacking bolt includes a jacking bolt thread meshable with an insert thread and a bearing tip secured to the jacking bolt. Advancing the jacking bolt through the insert brings the bearing tip into contact with a second casing half thus moving the first casing half relative to the second casing half. A jacking system for industrial equipment includes a plurality of jacking mechanisms configured to evenly change a gap between the first casing half and the second casing half. | 2012-05-31 |
20120132873 | TRAILER LIFTING JACK - A trailer jack having a low profile which will not interfere with opening of a towing vehicle's tailgate. The jack has tubes telescopically contained within each other. A threaded rod has a threaded tube slidingly placed over it. The threaded tube has slots and a pin in the threaded rod slides within the slots for synchronous rotation. This provides even extension and retractions for the telescoping tubes relative to each other. The jack has a low profile that extends above the trailer tongue a minimal amount when the jack is extended. When the jack is retracted, no parts of the jack are raised above the tongue. Thus, the tailgate of the towing vehicle may be operated without hitting any part of the jack. | 2012-05-31 |
20120132874 | WIRE GRIP | 2012-05-31 |
20120132875 | APPARATUS AND METHOD FOR USE IN HANDLING A LOAD - Apparatus and method for use in handling a load, the apparatus comprising a load bearing elongate member ( | 2012-05-31 |
20120132876 | GUARD SURFACE STRUCTURE - There is provided a guard surface structure excellent in shock-absorbing effect due to an unprecedented structure formed by combining a deformable supporting surface and shock-absorbing members. A guard surface structure comprises a net body | 2012-05-31 |
20120132877 | BENDABLE HANDRAIL ASSEMBLY OF AN EXERCISE APPARATUS - A bendable handrail assembly of an exercise apparatus wherein the handrail assembly is divided into a fixed portion and a bent portion. The fixed portion is coupled with a tube and positioned at an inclined angle relative to the handrail support of the exercise apparatus. The bent portion includes at one end thereof an inclined shaft fitting into the tube, and the bent portion is positioned by means of an elastic element and a positioning element in a pivotable state. At that time, the bent portion can be brought in a nearly horizontal position relative to the ground. When the handrail assembly is bent, the bent portion can rotate on the inclined shaft along the inclined angle (Z-axis of space) in a vertical position relative to the ground. | 2012-05-31 |
20120132878 | HARMONIC STABILIZER FOR PORCH AND PATIO RAILINGS - In a porch or patio railing system having a plurality of vertically disposed pickets, a harmonic stabilizer for dampening forced external harmonic resonance is applied thereto. Each harmonic stabilizer includes an elongated member having a c-shape configuration formed by three wall members including a back wall and a left and right side wall all integrally attached at right angles in relation to one another. A center channel of the elongated member is defined by the three side walls and also includes an open end for providing access to the center channel. A pair of inwardly extending notches attached along outer edges of the left and right side walls provides a friction fit mating mechanism when the harmonic stabilizer is employed onto one of the plurality of vertically disposed pickets. | 2012-05-31 |
20120132879 | NONVOLATILE MEMORY DEVICE AND METHOD OF MANUFACTURING THE SAME - Provided is a nonvolatile memory device including a phase-change memory configured with cross-point memory cells in which memory elements formed of a phase-change material and selection elements formed with a diode are combined. A memory cell is configured with a memory element formed of a phase-change material and a selection element formed with a diode having a stacked structure of a first polycrystalline silicon film, a second polycrystalline silicon film, and a third polycrystalline silicon film. The memory cells are arranged at intersection points of a plurality of first metal wirings extending along a first direction with a plurality of third metal wirings extending along a second direction orthogonal to the first direction. An interlayer film is formed between adjacent selection elements and between adjacent memory elements, and voids are formed in the interlayer film provided between the adjacent memory elements. | 2012-05-31 |
20120132880 | Memristors with Asymmetric Electrodes - Embodiments of the present invention are directed to nanoscale memristor devices that provide nonvolatile memristive switching. In one embodiment, a memristor device ( | 2012-05-31 |
20120132881 | CROSS-POINT MEMORY WITH SELF-DEFINED MEMORY ELEMENTS - Some embodiments include a memory device having first structures arranged in a first direction and second structures arranged in a second direction. At least one structure among the first and second structures includes a semiconductor material. The second structures contact the first structures at contact locations. A region at each of the contact locations is configured as memory element to store information based on a resistance of the region. The structures can include nanowires. Other embodiments are described. | 2012-05-31 |
20120132882 | Transparent Memory for Transparent Electronic Device - The present invention relates to a transparent memory for a transparent electronic device. The transparent memory includes: a lower transparent electrode layer that is sequentially formed on a transparent substrate, and a data storage region and an upper transparent layer which are made of at least one transparent resistance-variable material layer. The transparent resistance-variable material layer has switching characteristics as a result of the resistance variance caused by the application of a certain voltage between the lower and upper transparent electrode layers. An optical band gap of the transparent resistance-variable material layer is 3 eV or more, and transmittivity of the material layer for visible rays is 80% or more. The invention provides transparent and resistance-variable memory that: has very high transparency and switching characteristics depending on resistance variation at a low switching voltage, and can maintain the switching characteristics thereof after a long time elapses. | 2012-05-31 |
20120132883 | Resistive Switching Memory Device - A resistive switching memory device is provided with first to third electrodes. The first electrode forms a Schottky barrier which can develop a rectifying property and resistance change characteristics at an interface between the first electrode and an oxide semiconductor. The third electrode is made of a material which provides an ohmic contact with the oxide semiconductor. A control voltage is applied between the first and second electrodes, and a driving voltage is applied between the first and third electrodes. | 2012-05-31 |
20120132884 | SELF-ALIGNED, PLANAR PHASE CHANGE MEMORY ELEMENTS AND DEVICES, SYSTEMS EMPLOYING THE SAME AND METHODS OF FORMING THE SAME - Phase change memory elements, devices and systems using the same and methods of forming the same are disclosed. A memory element includes first and second electrodes, and a phase change material layer between the first and second electrodes. The phase change material layer has a first portion with a width less than a width of a second portion of the phase change material layer. The first electrode, second electrode and phase change material layer may be oriented at least partially along a same horizontal plane. | 2012-05-31 |
20120132885 | Fabrication of Graphene Electronic Devices Using Step Surface Contour - A method for fabricating an electronic component, comprising providing a substrate; and depositing a graphene layer; wherein the substrate is either provided with a van-der-Waals functional layer or a van-der-Waals functional layer is deposited on the substrate before depositing the graphene layer; a surface step contour is formed; and growth of the graphene layer is seeded at the step contour. | 2012-05-31 |
20120132886 | NANOFLUDIC FIELD EFFECT TRANSISTOR BASED ON SURFACE CHARGE MODULATED NANOCHANNEL - A field effect transistor device includes: a reservoir bifurcated by a membrane of three layers: two electrically insulating layers; and an electrically conductive gate between the two insulating layers. The gate has a surface charge polarity different from at least one of the insulating layers. A nanochannel runs through the membrane, connecting both parts of the reservoir. The device further includes: an ionic solution filling the reservoir and the nanochannel; a drain electrode; a source electrode; and voltages applied to the electrodes (a voltage between the source and drain electrodes and a voltage on the gate) for turning on an ionic current through the ionic channel wherein the voltage on the gate gates the transportation of ions through the ionic channel. | 2012-05-31 |
20120132887 | Nitride semiconductor light emitting device - A nitride semiconductor light emitting device includes n-type and p-type nitride semiconductor layers; an active layer disposed between the n-type and p-type nitride semiconductor layers and having a structure in which a plurality of quantum barrier layers and one or more quantum well layers are alternately stacked; and an electron blocking layer disposed between the active layer and the p-type nitride semiconductor layer. The electron blocking layer has a superlattice structure in which two or more layers having different compositions are alternately stacked. An absolute value of a net polarization mismatch between a material, the material having a composition corresponding to an average composition of the superlattice structure, and a quantum barrier layer adjacent to the electron blocking layer among the plurality of quantum barrier layers is less than ⅔ of an absolute value of a net polarization mismatch between Al | 2012-05-31 |
20120132888 | LIGHT EMITTING DEVICE AND METHOD OF FABRICATING THE SAME - A light emitting device includes a metal backing layer, a reflective electrode layer disposed on the metal backing layer, and a plurality of nanorods disposed on the reflective electrode layer. Each nanorod includes a p-semiconductor layer, an active layer, and an n-semiconductor layer, which are sequentially stacked on the reflective electrode layer. The light emitting device further includes an anti-reflection electrode layer disposed on the nanorods, and quantum dots disposed between the nanorods. The method includes sequentially growing the n-semiconductor layer, the active layer, and the p-semiconductor layer on a substrate; forming the nanorods by etching the p-semiconductor layer using a mask pattern; sequentially forming the reflective electrode layer and the metal backing layer on the p-semiconductor layer and then removing the substrate; disposing quantum dots between the nanorods; and forming the anti-reflection electrode layer on the nanorods. | 2012-05-31 |
20120132889 | SEMICONDUCTOR LIGHT EMITTING DEVICE AND FABRICATION METHOD FOR THE SAME - A high luminance semiconductor light emitting device and fabrication method thereof, wherein a metallic reflecting layer is formed using a non-transparent semiconductor substrate. The device includes a light emitting diode structure on a GaAs substrate structure bonded together using a first and a third metal layers. The substrate includes a GaAs layer, a first metal buffer layer on a surface of the GaAs layer, the first metal layer on the first metal buffer layer, and a second metal buffer layer and a second metal layer at a back side of the GaAs layer. The diode structure includes the third metal layer, a metal contact layer on the third metal layer, a p-type cladding layer on the metal contact layer, a multi-quantum well layer on the p-type cladding layer, an n-type cladding layer on the multi-quantum well layer, and a window layer on the n-type cladding layer. | 2012-05-31 |
20120132890 | LIGHT EMITTING DEVICE, LIGHT EMITTING DEVICE PACKAGE AND LIGHTING SYSTEM INCLUDING THE SAME - A light emitting device includes an active layer including a quantum barrier and a quantum well, a first conductive type semiconductor layer disposed at one side of the active layer, and a second conductive type semiconductor layer disposed at the other side of the active layer, wherein the first conductive type semiconductor layer or the second conductive type semiconductor layer includes a main barrier layer, and the main barrier layer includes a plurality of sub barrier layers and a basal layer disposed between the plurality of sub barrier layers. The plurality of sub barrier layers includes a first section in which energy band gaps of the plurality of sub barrier layers are increased and a second section in which energy band gaps of the plurality of sub barrier layers are decreased. | 2012-05-31 |
20120132891 | PRECISION QUANTUM DOT CLUSTERS - Precision quantum dot clusters and methods for producing and tuning quantum dot clusters are described herein. Also described herein are materials and devices, including photovoltaic devices, that may include one or more quantum dot clusters. | 2012-05-31 |
20120132892 | Nano Device - Disclosed herein is a nano device, including: a carbon layer including one-layered graphene having a honeycombed planar structure in which carbon atoms are connected with each other and two or more-layered monocrystalline graphite; and one or more vertically-grown nanostructures formed on the carbon layer. This nano device can be used to manufacture an integrated circuit in which various devices including a graphene electronic device and a photonic device are connected with each other, and is a high-purity and high-quality nano device having a small amount of impurities because a metal catalyst is not used. | 2012-05-31 |
20120132893 | Graphene Electronic Devices - A graphene electronic device includes a gate electrode, a gate oxide disposed on the gate electrode, a graphene channel layer formed on the gate oxide, and a source electrode and a drain electrode respectively disposed on both ends of the graphene channel layer. In the graphene channel layer, a plurality of nanoholes are arranged in a single line in a width direction of the graphene channel layer. | 2012-05-31 |
20120132894 | Organic Optoelectronic Component and Method for Producing an Organic Optoelectronic Component - In at least one embodiment of the organic optoelectronic component ( | 2012-05-31 |
20120132895 | ORGANIC ELECTROLUMINESCENT DEVICE - An organic electroluminescent device includes at least two light-emissive units provided between a cathode electrode and an anode electrode opposed to the cathode electrode, each of the light-emissive units including at least one light-emissive layer. The light-emissive units are partitioned from each other by at least one charge generation layer, the charge generation layer being an electrically insulating layer having a resistivity of not less than 1.0×10 | 2012-05-31 |
20120132896 | Benzoxazole Derivative, Light-Emitting Element, Light-Emitting Device, Electronic Device, and Lighting Device - A novel benzoxazole derivative having high excitation energy, particularly high triplet excitation energy is provided. A light-emitting element having high current efficiency is provided by application of the novel benzoxazole derivative for the light-emitting element. A light-emitting device, an electronic device, and a lighting device each having reduced power consumption are provided. The benzoxazole derivative is represented by General Formula (G1). In the formula, R | 2012-05-31 |
20120132897 | DIFFRACTION GRATING, ORGANIC EL ELEMENT USING THE SAME, AND MANUFACTURING METHODS THEREOF - A diffraction grating having a transparent supporting substrate; and a cured resin layer which is stacked on the transparent supporting substrate and which has concavities and convexities formed on a surface thereof, wherein when a Fourier-transformed image is obtained by performing two-dimensional fast Fourier transform processing on a concavity and convexity analysis image obtained by analyzing a shape of the concavities and convexities formed on the surface of the cured resin layer by use of an atomic force microscope, the Fourier-transformed image shows a circular or annular pattern substantially centered at an origin at which an absolute value of wavenumber is 0 μm | 2012-05-31 |
20120132898 | ELECTRONIC DEVICES COMPRISING MULTI CYCLIC HYDROCARBONS - The present invention relates to compositions comprising functionalized or un-functionalized multi cyclic hydrocarbons and functional organic compounds, which can be used in different electronic devices. The invention further relates to an electronic device comprising one or more organic functional layers, wherein at least one of the layers comprises at least one functionalized or un-functionalized multi cyclic hydrocarbon. Another embodiment of the present invention relates to a formulation comprising functionalized or un-functionalized multi cyclic hydrocarbons, from which a thin layer comprising at least one functionalized or un-functionalized multi cyclic hydrocarbon can be formed. | 2012-05-31 |
20120132899 | NITROGENATED HETEROCYCLIC RING DERIVATIVE AND ORGANIC ELECTROLUMINESCENT ELEMENT COMPRISING SAME - A nitrogen-containing heterocyclic derivative represented by the following formula (1): | 2012-05-31 |
20120132900 | ORGANIC ELECTROLUMINESCENT ELEMENT, ORGANIC ELECTROLUMINESCENT DISPLAY DEVICE, ORGANIC ELECTROLUMINESCENT ILLUMINATING DEVICE, AND METHOD FOR MANUFACTURING ORGANIC ELECTROLUMINESCENT ELEMENT - An organic electroluminescent element comprising: an anode ( | 2012-05-31 |
20120132901 | PYRENE DERIVATIVE AND ORGANIC LIGHT-EMITTING DEVICE USING THE SAME - An organic light-emitting device includes an anode, a cathode, and an organic compound layer interposed between the anode and the cathode. The organic compound layer contains a pyrene derivative. | 2012-05-31 |
20120132902 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF - A normally-off transistor having an oxide semiconductor layer in a channel formation layer is provided. The transistor comprises: a first oxide semiconductor layer functioning as a channel formation region; a source electrode layer and a drain electrode layer which overlap with the first oxide semiconductor layer; a gate insulating layer which is provided over and in contact with the first oxide semiconductor layer, the source electrode layer, and the drain electrode layer; a second oxide semiconductor layer which is provided over and in contact with the gate insulating layer and overlaps with the first oxide semiconductor layer; and a gate electrode layer provided over the second oxide semiconductor layer. A manufacturing method thereof is also disclosed. | 2012-05-31 |
20120132903 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE - A highly reliable semiconductor device is manufactured by giving stable electric characteristics to a transistor in which an oxide semiconductor film is used for a channel. An oxide semiconductor film which can have a first crystal structure by heat treatment and an oxide semiconductor film which can have a second crystal structure by heat treatment are formed so as to be stacked, and then heat treatment is performed; accordingly, crystal growth occurs with the use of an oxide semiconductor film having the second crystal structure as a seed, so that an oxide semiconductor film having the first crystal structure is formed. An oxide semiconductor film formed in this manner is used for an active layer of the transistor. | 2012-05-31 |
20120132904 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - An object to provide a material suitably used for used for a semiconductor included in a transistor, a diode, or the like, with the use of a sputtering method. Specifically, an object is to provide a manufacturing process an oxide semiconductor film having high crystallinity. By intentionally adding nitrogen to the oxide semiconductor, an oxide semiconductor film having a wurtzite crystal structure that is a hexagonal crystal structure is formed. In the oxide semiconductor film, the crystallinity of a region containing nitrogen is higher than that of a region hardly containing nitrogen or a region to which nitrogen is not intentionally added. The oxide semiconductor film having high crystallinity and having a wurtzite crystal structure is used as a channel formation region of a transistor. | 2012-05-31 |
20120132905 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF - An object is to provide a transistor in which the state of an interface between an oxide semiconductor layer and an insulating film (gate insulating layer) in contact with the oxide semiconductor layer is favorable; and a method for manufacturing the transistor. In order to obtain the transistor, nitrogen is added to a region of the oxide semiconductor layer in the vicinity of the interface with the gate insulating layer. Specifically, a concentration gradient of nitrogen is formed in the oxide semiconductor layer, and a region containing much nitrogen is provided at the interface with the gate insulating layer. By the addition of nitrogen, a region with high crystallinity can be formed in the region of the oxide semiconductor layer in the vicinity of the interface with the gate insulating layer, so that a stable interface state can be obtained. | 2012-05-31 |
20120132906 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - A transistor in which the state of an interface between an oxide semiconductor layer and an insulating film in contact with the oxide semiconductor layer is favorable and a method for manufacturing the transistor are provided. Nitrogen is added to the vicinity of the interface between the oxide semiconductor layer and the insulating film (gate insulating layer) in contact with the oxide semiconductor layer so that the state of the interface of the oxide semiconductor layer becomes favorable. Specifically, the oxide semiconductor layer has a concentration gradient of nitrogen, and a region containing much nitrogen is provided at the interface with the gate insulating layer. A region having high crystallinity can be formed in the vicinity of the interface with the oxide semiconductor layer by addition of nitrogen, whereby the interface state can be stable. | 2012-05-31 |
20120132907 | SEMICONDUCTOR FILM, SEMICONDUCTOR ELEMENT, SEMICONDUCTOR DEVICE, AND METHOD FOR MANUFACTURING THE SAME - One of objects is to provide a semiconductor film having stable characteristics. Further, one of objects is to provide a semiconductor element having stable characteristics. Further, one of objects is to provide a semiconductor device having stable characteristics. Specifically, a structure which includes a seed crystal layer (seed layer) including crystals each having a first crystal structure, one of surfaces of which is in contact with an insulating surface, and an oxide semiconductor film including crystals growing anisotropically, which is on the other surface of the seed crystal layer (seed layer) may be provided. With such a heterostructure, electric characteristics of the semiconductor film can be stabilized. | 2012-05-31 |
20120132908 | SEMICONDUCTOR DEVICE, MANUFACTURING METHOD THEREOF, AND ELECTRONIC DEVICE - In a thin film transistor, a gate insulating layer is formed on a gate electrode formed on an insulating substrate. Formed on the gate insulating layer is a semiconductor layer. Formed on the semiconductor layer are a source electrode and a drain electrode. A protective layer covers them, so that the semiconductor layer is blocked from an atmosphere. The semiconductor layer (active layer) is made of, e.g., a semiconductor containing polycrystalline ZnO to which, e.g., a group V element is added. This allows practical use of a semiconductor device which has an active layer made of zinc oxide and which includes an protective layer for blocking the active layer from an atmosphere. | 2012-05-31 |
20120132909 | THIN FILM TRANSISTOR, METHOD FOR MANUFACTURING SAME, DISPLAY DEVICE, AND METHOD FOR MANUFACTURING SAME - A thin film transistor includes: an insulating layer; a gate electrode provided on the insulating layer; a gate insulating film provided on the gate electrode; a semiconductor layer provided on the gate insulating film, the semiconductor layer being formed of oxide; a source electrode and a drain electrode provided on the semiconductor layer; and a channel protecting layer provided between the source and drain electrodes and the semiconductor layer. The source electrode is opposed to one end of the gate electrode. The drain electrode is opposed to another end of the gate electrode. The another end is opposite to the one end. The drain electrode is apart from the source electrode. The channel protecting layer covers at least a part of a side face of a part of the semiconductor layer. The part of the semiconductor layer is not covered with the source electrode and the drain electrode above the gate electrode. | 2012-05-31 |
20120132910 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - One of the objects of the present invention is to provide a thin film transistor using an oxide semiconductor film containing indium (In), gallium (Ga), and zinc (Zn), in which the contact resistance between the oxide semiconductor layer and a source and drain electrodes is reduced, and to provide a method for manufacturing the thin film transistor. An ohmic contact is formed by intentionally providing a buffer layer having a higher carrier concentration than the IGZO semiconductor layer between the IGZO semiconductor layer and the source and drain electrode layers. | 2012-05-31 |
20120132911 | THIN FILM TRANSISTOR HAVING A TWO-LAYER SEMICONDUCTOR, MANUFACTURING METHOD THEREFOR, AND DISPLAY APPARATUS USING THE SAME - A transistor is constituted of a gate electrode | 2012-05-31 |
20120132912 | SEMICONDUCTOR DEVICE - A MOSFET cell of a semiconductor device includes a polysilicon gate electrode and an n | 2012-05-31 |
20120132913 | III-V Compound Semiconductor Material Passivation With Crystalline Interlayer - The present disclosure reduces and, in some instances, eliminates the density of interface states in III-V compound semiconductor materials by providing a thin crystalline interlayer onto an upper surface of a single crystal III-V compound semiconductor material layer to protect the crystallinity of the single crystal III-V compound semiconductor material layer's surface atoms prior to further processing of the structure. | 2012-05-31 |
20120132914 | OXIDE SEMICONDUCTOR THIN FILM TRANSISTOR STRUCTURE AND METHOD OF MAKING THE SAME - An oxide semiconductor thin film transistor structure includes a substrate, a gate electrode disposed on the substrate, a semiconductor insulating layer disposed on the substrate and the gate electrode, an oxide semiconductor layer disposed on the semiconductor insulating layer, a patterned semiconductor layer disposed on the oxide semiconductor layer, and a source electrode and a drain electrode respectively disposed on the patterned semiconductor layer. The source electrode and the drain electrode are made of a metal layer. | 2012-05-31 |
20120132915 | THIN FILM TRANSISTOR ARRAY SUBSTRATE AND MANUFACTURING METHOD THEREOF - A thin film transistor array substrate includes a gate line disposed on a substrate, the gate line comprising a gate electrode including a lower film and an upper film thicker than the lower film, a gate insulating layer formed on the gate line, a semiconductor layer formed on the gate insulating layer, an ohmic contact layer formed on the semiconductor layer, a data line electrically connected to a source electrode and a drain electrode formed on the ohmic contact layer, the lower film of the gate line is in contact with the gate insulating layer at a crossing portion of the gate line and the data line and the heights of the source electrode and the drain electrode are substantially the same as or less than a height of the semiconductor layer. | 2012-05-31 |
20120132916 | ORGANIC LIGHT-EMITTING DISPLAY APPARATUS AND METHOD OF MANUFACTURING THE SAME - An organic light-emitting display apparatus includes: an active layer formed on the substrate; a gate electrode, in which a first insulation layer formed on the active layer, a first conductive layer formed on the first insulation layer and comprising a transparent conductive material, and a second conductive layer comprising a metal are sequentially stacked; a pixel electrode, in which a first electrode layer formed on the first insulation layer to be spaced apart from the gate electrode and comprising a transparent conductive material, a second electrode layer formed of a semi-permeable metal and comprising pores, and a third electrode layer comprising a metal are sequentially stacked; source/drain electrodes electrically connected to the active layer with a second insulation layer covering the gate electrode and the pixel electrode interposed therebetween; an electro-luminescence (EL) layer formed on the pixel electrode; and an opposite electrode formed on the EL layer to face the pixel electrode, wherein the second electrode layer comprises nano-sized silver (Ag) particles. | 2012-05-31 |