22nd week of 2017 patent applcation highlights part 44 |
Patent application number | Title | Published |
20170154992 | Transistor Device with Increased Gate-Drain Capacitance - Disclosed is a transistor device. The transistor device includes: a semiconductor body with an active region and a pad region; at least one transistor cell including a gate electrode dielectrically insulated from a body region by a gate dielectric, wherein the body region is arranged in the active region; an electrode layer arranged above the pad region and dielectrically insulated from the pad region by a further dielectric; and a gate pad arranged above the electrode layer and electrically connected to the electrode layer and the gate electrode of the at least one transistor cell. A thickness of the further dielectric is equal to or less than a thickness of the gate dielectric. | 2017-06-01 |
20170154993 | Reduced Gate Charge Field-Effect Transistor - In one implementation, a reduced gate charge field-effect transistor (FET) includes a drift region situated over a drain, a body situated over the drift region, and source diffusions formed in the body. The source diffusions are adjacent a gate trench extending through the body into the drift region and having a dielectric liner and a gate electrode situated therein. The dielectric liner includes an upper segment and a lower segment, the upper segment extending to at least a depth of the source diffusions and being significantly thicker than the lower segment. | 2017-06-01 |
20170154994 | METHODS OF FORMING A CONTACT STRUCTURE FOR A VERTICAL CHANNEL SEMICONDUCTOR DEVICE AND THE RESULTING DEVICE - One illustrative method disclosed includes, among other things, forming a vertically oriented semiconductor structure above a doped well region defined in a semiconductor substrate, the semiconductor structure comprising a lower source/drain region and an upper source/drain region, wherein the lower source/drain region physically contacts the upper surface of the substrate, forming a counter-doped isolation region in the substrate, forming a metal silicide region in the substrate above the counter-doped isolation region, wherein the metal silicide region is in physical contact with the lower source/drain region, and forming a lower source/drain contact structure that is conductively coupled to the metal silicide region. | 2017-06-01 |
20170154995 | REPLACEMENT BODY FINFET FOR IMPROVED JUNCTION PROFILE WITH GATE SELF-ALIGNED JUNCTIONS - After forming an epitaxial semiconductor layer on portions of a semiconductor located on opposite sides of a sacrificial gate structure, dopants from the epitaxial semiconductor layer are diffused into the semiconductor fin to form a dopant-containing semiconductor fin. A sacrificial gate stack is removed to provide a gate cavity that exposes a portion of the dopant-containing semiconductor fin. The exposed portion of the dopant-containing semiconductor fin is removed to provide an opening underneath the gate cavity. A channel which is undoped or less doped than remaining portions of the dopant-containing semiconductor fin is epitaxially grown at least from the sidewalls of the remaining portions of the dopant-containing semiconductor fin. Abrupt junctions are thus formed between the channel region and the remaining portions of the dopant-containing semiconductor fin. | 2017-06-01 |
20170154996 | FIN STRUCTURE OF SEMICONDUCTOR DEVICE, MANUFACTURING METHOD THEREOF, AND MANUFACTURING METHOD OF ACTIVE REGION OF SEMICONDUCTOR DEVICE - A method for manufacturing an active region of a semiconductor device includes forming an implanted region in a substrate. The implanted region is adjacent to a top surface of the substrate. A clean treatment is performed on the top surface of the substrate. The top surface of the substrate is baked. An epitaxial layer is formed on the top surface of the substrate. | 2017-06-01 |
20170154997 | METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE - To provide a transistor in which a channel is formed in an oxide semiconductor and which has stable electrical characteristics. To suppress shift in threshold voltage of a transistor in which a channel is formed in an oxide semiconductor. To provide a normally-off switching element having a positive threshold voltage as an n-channel transistor in which a channel is formed in an oxide semiconductor. A base insulating layer is formed over a substrate, an oxide semiconductor layer is formed over the base insulating layer, a first gate insulating layer is formed over the oxide semiconductor layer, a second gate insulating layer is formed over the first gate insulating layer by a sputtering method or an atomic layer deposition method at a substrate temperature of higher than or equal to 100° C., and a gate electrode layer is formed over the second gate insulating layer. | 2017-06-01 |
20170154998 | FIELD EFFECT TRANSISTOR, DISPLAY ELEMENT, IMAGE DISPLAY DEVICE, AND SYSTEM - A field effect transistor includes a gate electrode to which a gate voltage is applied; a source electrode and a drain electrode for obtaining a current in response to the gate voltage; an active layer provided adjacent to the source electrode and the drain electrode and formed of an oxide semiconductor including magnesium and indium as major components; and a gate insulating layer provided between the gate electrode and the active layer. | 2017-06-01 |
20170154999 | Recessed Transistors Containing Ferroelectric Material - Some embodiments include transistor constructions having a first insulative structure lining a recess within a base. A first conductive structure lines an interior of the first insulative structure, and a ferroelectric structure lines an interior of the first conductive structure. A second conductive structure is within a lower region of the ferroelectric structure, and the second conductive structure has an uppermost surface beneath an uppermost surface of the first conductive structure. A second insulative structure is over the second conductive structure and within the ferroelectric structure. A pair of source/drain regions are adjacent an upper region of the first insulative structure and are on opposing sides of the first insulative structure from one another. | 2017-06-01 |
20170155000 | THIN FILM TRANSISTOR SUBSTRATE AND DISPLAY USING THE SAME - A thin film transistor substrate includes a first thin film transistor disposed having a polycrystalline semiconductor layer, a first gate electrode on the polycrystalline semiconductor layer, a first source electrode and a first drain electrode; a first gate insulating layer between the polycrystalline semiconductor layer and the first gate electrode; a second thin film transistor disposed having an oxide semiconductor layer on the first gate electrode, a second gate electrode on the oxide semiconductor layer, a second source electrode and a second drain electrode; an intermediate insulating layer disposed on the first gate electrode and under the oxide semiconductor layer; and a second gate insulating layer on the intermediate insulating layer and under the first source electrode, the first drain electrode and the second gate electrode. | 2017-06-01 |
20170155001 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF - A semiconductor device includes channel layers disposed over a substrate, a source/drain region disposed over the substrate, a gate dielectric layer disposed on and wrapping each of the channel layers, and a gate electrode layer disposed on the gate dielectric layer and wrapping each of the channel layers. Each of the channel layers includes a semiconductor wire made of a first semiconductor material. The semiconductor wire extends into the source/drain region. The semiconductor wire in the source/drain regions is wrapped around by a second semiconductor material. | 2017-06-01 |
20170155002 | MANUFACTURE METHOD OF LTPS THIN FILM TRANSISTOR AND LTPS THIN FILM TRANSISTOR - The present invention provides a manufacture method of a LTPS thin film transistor and a LTPS thin film transistor. The gate isolation layer is first etched to form the recess, and then the gate is formed on the recess so that the width of the gate is slightly larger than the width of the recess. Then, the active layer is implemented with ion implantation to form the source contact region, the drain contact region, the channel region and one transition region at least located between the drain contact region and the channel region. The gate isolation layer above the transition region is thicker than the channel region and can shield a part of the gate electrical field to make the carrier density here lower than the channel region to form a transition. | 2017-06-01 |
20170155003 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURNG THE SAME - To provide a semiconductor device which has transistor characteristics with little variation and includes an oxide semiconductor. The semiconductor device includes an insulating film over a conductive film and an oxide semiconductor film over the insulating film. The oxide semiconductor film includes a first oxide semiconductor layer, a second oxide semiconductor layer over the first oxide semiconductor layer, and a third oxide semiconductor layer over the second oxide semiconductor layer. The energy level of a bottom of a conduction band of the second oxide semiconductor layer is lower than those of the first and third oxide semiconductor layers. An end portion of the second oxide semiconductor layer is positioned on an inner side than an end portion of the first oxide semiconductor layer. | 2017-06-01 |
20170155004 | THROUGH SILICON VIA BASED PHOTOVOLTAIC CELL - An embodiment includes an apparatus comprising: a first photovoltaic cell; a first through silicon via (TSV) included in the first photovoltaic cell and passing through at least a portion of a doped silicon substrate, the first TSV comprising (a)(i) a first sidewall, which is doped oppositely to the doped silicon substrate, and (a)(ii) a first contact substantially filling the first TSV; and a second TSV included in the first photovoltaic cell and passing through at least another portion of the doped silicon substrate, the second TSV comprising (b)(i) a second sidewall, which comprises the doped silicon substrate, and (b)(ii) a second contact substantially filling the second TSV; wherein the first and second contacts each include a conductive material that is substantially transparent. Other embodiments are described herein. | 2017-06-01 |
20170155005 | SELENIZATION/SULFURIZATION PROCESS APPARATUS FOR USE WITH SINGLE-PIECE GLASS SUBSTRATE - A selenization/sulfurization process apparatus for use with a single-piece glass substrate is characterized by two chambers for heating up a glass substrate quickly and performing selenization/sulfurization on the glass substrate to not only prevent the glass substrate from staying at a soaking temperature of a softening point for a long period of time but also increase the thin-film selenization/sulfurization temperature according to the needs of the process to thereby reduce the duration of soaking selenization/sulfurization, save energy, and save time. The glass substrate undergoes reciprocating motion in the chambers to not only attain uniform temperature throughout the glass substrate but also distribute a selenization/sulfurization gas across the glass substrate uniformly during the selenization/sulfurization operation. The recycled liquid selenium/sulfur and inert gas are reusable to thereby reduce material costs. | 2017-06-01 |
20170155006 | EDGE PROTECTED BARRIER ASSEMBLIES - The present application is directed to an assembly comprising an electronic device, and a multilayer film. The multilayer film comprises a barrier stack adjacent the electronic device; and a weatherable sheet adjacent the barrier stack opposite the electronic device. The assembly additionally comprises a protective layer in contact with the electronic device and the weatherable sheet. The present application allows for the combination of any of the disclosed elements. | 2017-06-01 |
20170155007 | SOLAR CELL MODULE AND METHOD FOR MANUFACTURING SAME - This solar cell module includes a solar cell and a wiring member. The solar cell includes a collecting electrode on a light-receiving side of a photoelectric conversion section, and a back electrode on a back side of the photoelectric conversion section. Sequentially from the photoelectric conversion section side, the collecting electrode includes a first collecting electrode and a second collecting electrode, and the back electrode comprises a first back electrode and a second back electrode. It is preferable that the surface roughness Ra1 of the first collecting electrode and the surface roughness Ra2 of the second collecting electrode satisfy Ra1≧Ra2 and Ra2=1.0 to 10.0 μm. It is also preferable that the outermost layer of the second collecting electrode and the outermost layer of the second back electrode are mainly composed of the same electroconductive material. | 2017-06-01 |
20170155008 | NANOWIRE-BASED SOLAR CELL STRUCTURE - The solar cell structure according to the present invention comprises a nanowire ( | 2017-06-01 |
20170155009 | P-TYPE AMORPHOUS OXIDE SEMICONDUCTOR INCLUDING GALLIUM, METHOD OF MANUFACTURING SAME, AND SOLAR CELL INCLUDING SAME AND METHOD OF MANUFACTURING SAID SOLAR CELL - a p-type amorphous oxide semiconductor including gallium, a method of manufacturing the same, a solar cell including the same and a method of manufacturing the solar cell are disclosed. The p-type oxide semiconductor where gallium (Ga) is further combined with combination of one or more components selected from a group of CuS, SnO, ITO, IZTO, IGZO and IZO is provided. | 2017-06-01 |
20170155010 | INFRARED DETECTOR AND METHOD OF DETECTING ONE OR MORE BANDS OF INFRARED RADIATION - An infrared detector is provided. The infrared detector includes an absorption layer sensitive to radiation in only a short wavelength infrared spectral band, and a barrier layer coupled to the absorption layer. The barrier layer is fabricated from an alloy including aluminum and antimony, and at least one of gallium or arsenic, and the composition of the alloy is selected such that valence bands of the absorption layer and the barrier layer substantially align. | 2017-06-01 |
20170155011 | INFRARED DETECTOR AND METHOD OF DETECTING ONE OR MORE BANDS OF INFRARED RADIATION - A dual-band infrared detector is provided. The dual-band infrared detector includes a first absorption layer sensitive to radiation in only a short wavelength infrared spectral band, and a barrier layer coupled to the first absorption layer. The barrier layer is fabricated from an alloy including aluminum and antimony, and at least one of gallium or arsenic. The dual-band infrared detector also includes a second absorption layer coupled to the barrier layer opposite the first absorption layer. The second absorption layer is sensitive to radiation in only a medium wavelength infrared spectral band. The composition of the alloy used to fabricate the barrier layer is selected such that valence bands of the barrier layer and the first and second absorption layers substantially align. | 2017-06-01 |
20170155012 | MULTI-OPERATION TOOL FOR PHOTOVOLTAIC CELL PROCESSING - Multi-operation tools for photovoltaic cell processing are described. In an example, a multi-operation tool includes a conveyor system to move a photovoltaic (PV) cell continuously along a conveyor path through a laser scribing station and an adhesive printing station. Furthermore, the PV cell may be aligned to a laser head of the laser scribing station and a printer head of the adhesive printing station in a single alignment operation prior to being laser scribed and printed with an adhesive in a continuous process. | 2017-06-01 |
20170155013 | LED ELEMENT - An LED element is provided with: a first semiconductor layer formed of an n-type nitride semiconductor; a second semiconductor layer formed on top of the first semiconductor layer and formed of quaternary mixed crystals of Al | 2017-06-01 |
20170155014 | LIGHT-EMITTING ELEMENT AND METHOD FOR PRODUCING THE SAME - A light-emitting element includes a sapphire substrate including: a principal surface that is in a c-plane of the sapphire substrate, and a plurality of projections on the principal surface, wherein each of the plurality of projections has a shape of pseudo-hexagonal pyramid including six lateral surfaces, each of the six lateral surfaces including an inwardly curved surface portion, and wherein, in a top view of the sapphire substrate, each of the plurality of projections has a shape of a pseudo-hexagon that includes first curved lines and second curved lines that are alternately connected to one another, the first curved lines being curved toward a center of a corresponding hexagon and disposed between respective adjacent pairs of six vertices of the hexagon, and the second curved lines passing through respective vertices of the hexagon; and a semiconductor layered body comprising a nitride semiconductor on the principal surface side of the sapphire substrate, the semiconductor layered body including an active layer. | 2017-06-01 |
20170155015 | LIGHT-EMITTING DEVICE HAVING A PATTERNED SURFACE - A light-emitting device comprises a substrate having a top surface and a plurality of patterned units protruding from the top surface; and a light-emitting stack formed on the substrate and having an active layer with a first surface substantially parallel to the top surface, wherein one of the plurality of patterned units comprises a plurality of connecting sides constituting a polygon shape in a top view of the light-emitting device, the one of the plurality of patterned units comprises a vertex and a plurality of inclined surfaces respectively extending from the plurality of connecting sides, the plurality of inclined surfaces commonly join at the vertex in a cross-sectional view of the light-emitting device, the vertex being between the top surface of the substrate and the first surface of the active layer, and six of the plurality of patterned units forms a hexagon in the top view of the light-emitting device. | 2017-06-01 |
20170155016 | NITRIDE SEMICONDUCTOR CRYSTAL AND METHOD OF FABRICATING THE SAME - Fabricating a high-quality nitride semiconductor crystal at a lower temperature. A nitride semiconductor crystal is fabricated by supplying onto a substrate ( | 2017-06-01 |
20170155017 | LIGHT EMITTING DEVICE - A light emitting device according to an embodiment comprises: a light emitting structure including a first conductive semiconductor layer, an active layer disposed under the first conductive semiconductor layer, and a second conductive semiconductor layer disposed under the active layer; a protective layer disposed above the light emitting structure and including a through region; a first electrode disposed in the through region and electrically connected to the first conductive semiconductor layer; an electrode pad electrically connected to the first electrode, and having a first region disposed on the first electrode and a second region disposed on the protective layer; and a second electrode electrically connected to the second conductive semiconductor layer. | 2017-06-01 |
20170155018 | SEMICONDUCTOR LIGHT-EMITTING STRUCTURE AND SEMICONDUCTOR PACKAGE STRUCTURE THEREOF - A semiconductor light-emitting structure and a semiconductor package structure thereof are provided. The semiconductor light-emitting structure includes a first-type semiconductor layer, an active layer, a second-type semiconductor layer, a metal layer and a distributed Bragg reflector. The active layer is disposed on the first-type semiconductor layer. The second-type semiconductor layer is disposed on the active layer. The metal layer is disposed on the second-type semiconductor layer as a first reflective structure, wherein the metal layer has an opening portion. The distributed Bragg reflector is disposed on the metal layer and interposed into the opening portion as a second reflective structure. The first reflective structure and the second reflective structure form a reflective surface on the second-type semiconductor layer. | 2017-06-01 |
20170155019 | LIGHT-EMITTING DIODE CHIP PACKAGES AND METHODS FOR MANUFACTURE THEREOF - A light-emitting diode chip package and a manufacturing process thereof sequentially includes a transparent layer, a fluorescent layer, a wafer layer, a light-emitting diode chip, a dielectric layer, a metal circuit layer, and a protective film and conductive blocks used to draw out the electrodes of the light-emitting diode chip. The outer surfaces of the fluorescent layer and the wafer layer retreat from the fluorescent layer down to the wafer layer to form a slant, and the dielectric layer, the metal circuit layer, and the protective film spread out to coat the slant. Simple techniques at low cost are involved. | 2017-06-01 |
20170155020 | WAVELENGTH-CONVERTING MATERIAL AND APPLICATION THEREOF - A wavelength-converting material and an application thereof are provided. The wavelength-converting material includes an all-inorganic perovskite quantum dot having a chemical formula of CsPb(Cl | 2017-06-01 |
20170155021 | PACKAGE, PACKAGE INTERMEDIATE BODY, LIGHT EMITTING DEVICE, METHOD FOR MANUFACTURING SAME - A package has a first electrode, a second electrode, and a first resin body. The first resin body has a retainer portion and a wall portion. The retainer portion retains the first electrode and the second electrode and forms a bottom portion of the package together with the first electrode and the second electrode. The wall portion surrounds a mounting region on the bottom portion and has a pair of opposite outer sides. Each of the first electrode and the second electrode has an outer lead portion extending outwardly from respective one of the pair of opposite outer sides of the wall portion. The first resin body further has a flange portion having parts extending from the pair of opposite outer sides of the wall portion. Each of the outer lead portions extends outwardly beyond a distal end of the corresponding part of the flange portion in plan view. | 2017-06-01 |
20170155022 | LIGHT EMITTING DEVICE - A light emitting device includes one or more light emitting elements, a light transmissive member, and a light reflective member. The one or more light emitting elements each includes an upper surface. The light transmissive member has an upper surface and a lower surface. The light reflective member covers surfaces of the light transmissive member and lateral surfaces of the one or more light emitting elements so as to expose the upper surface of the light transmissive member. The upper surface area of the light transmissive member is smaller than a sum of the upper surface areas of the one or more light emitting elements, and the lower surface area of the light transmissive member is larger than a sum of the upper surface areas of the one or more light emitting elements. | 2017-06-01 |
20170155023 | LIGHT EMITTING DEVICE AND ELEMENT MOUNTING BOARD - A light emitting device includes: an element mounting board having a base and conductive patterns disposed on a main surface of the base, and each having one or more element mounting areas and one or more external connection areas; conductive patterns each having first and second conductive layers which is made of a different material from that of the first conductive layer, and disposed in this order starting from the base side; element mounting areas, on which the light emitting elements are mounted, having the first conductive layer that is not covered by the second conductive layer; external connection areas having the first conductive layer in which an outer edge is exposed from the second conductive layer; a light reflecting component integrally covers the element mounting areas and lateral surfaces of the light emitting elements; and a light-transmissive component exposing the external connection areas. | 2017-06-01 |
20170155024 | LIGHT EMITTING PACKAGE - A light emitting package includes a first lead frame; a second lead frame spaced apart from the first lead frame in a first direction; a body coupled to the first lead frame and the second lead frame; and a light emitting element on the first lead frame. The first lead frame includes first to fourth side parts, the first side part includes a first protrusion that protrudes outwards from one side surface of the body, and a first contact part disposed at the end of the first protrusion. The second lead frame includes fifth to eighth side parts, the fifth side part includes a second protrusion that protrudes outwards from a side surface of the body, which is symmetrical to the one side surface of the body, and a second contact part disposed at the end of the second protrusion. Each of the first contact part and the second contact part includes a second layer and first layer covers the second layer. | 2017-06-01 |
20170155025 | LIGHT EMITTING DEVICE - A light emitting device includes a support substrate; a conductive wiring located on an upper surface of the support substrate; a light emitting element disposed on an upper surface of the conductive wiring via a bonding member interposed therebetween; and a frame body located on an upper surface of the support substrate. The frame body has a plurality of recessed portions on an inner lateral surface surrounding the light emitting element in a top view of the light emitting device. The conductive wiring includes an underlying portion located directly under the light emitting element, and at least two extended portions extending from the underlying portion to a location inside of at least two respective ones of the recessed portions in a top view of the light emitting device. | 2017-06-01 |
20170155026 | LIGHT EMITTING DIODE (LED) COMPONENTS INCLUDING MULTIPLE LED DIES THAT ARE ATTACHED TO LEAD FRAMES - A Light Emitting Diode (LED) component includes a lead frame and an LED that is electrically connected to the lead frame without wire bonds, using a solder layer. The lead frame includes a metal anode pad, a metal cathode pad and a plastic cup. The LED die includes LED die anode and cathode contacts with a solder layer on them. The metal anode pad, metal cathode pad, plastic cup and/or the solder layer are configured to facilitate the direct die attach of the LED die to the lead frame without wire bonds. Related fabrication methods are also described. | 2017-06-01 |
20170155027 | THERMOELECTRIC GENERATING SYSTEM - A thermoelectric generating system is provided. The system includes one or more thermoelectric modules that are mounted on a top surface of a heat source part and a cooling part that is disposed over the thermoelectric modules. A pressurizing device is configured to pressurize the thermoelectric modules and the cooling part toward the heat source part and a cover is installed to cover an upper portion of the pressurizing device. | 2017-06-01 |
20170155028 | PIEZOELECTRIC MODULE, ULTRASONIC MODULE, AND ELECTRONIC APPARATUS - A piezoelectric module includes an element substrate that includes a plurality of piezoelectric bodies (piezoelectric elements) arranged in an array, and a plurality of connection electrodes (lower connection electrode and upper connection electrode) that are connected to the piezoelectric body (piezoelectric element) and are drawn between the piezoelectric body (piezoelectric element) and an adjacent piezoelectric body (piezoelectric element), an input and output circuit that is provided on one surface side of the element substrate and independently inputs and outputs a signal from and to each of the connection electrodes (lower connection electrode and upper connection electrode), and columnar electrodes (first through electrode and second through electrode) each of which is provided between each of the connection electrodes (lower connection electrode and upper connection electrode) and the input and output circuit and connects each of the connection electrodes (lower connection electrode and upper connection electrode) and the input and output circuit to each other. | 2017-06-01 |
20170155029 | PIEZOELECTRIC DEVICE, PIEZOELECTRIC MODULE, AND ELECTRONIC APPARATUS - A piezoelectric device includes an element substrate that includes a first surface (operating surface) and a second surface (back surface) on a side opposite to the first surface, and includes a recessed opening provided on the first surface and a supporting portion surrounding the recessed opening, a piezoelectric body that is provided on the second surface of the recessed opening, a plurality of connection electrodes (lower connection electrode and upper connection electrode) that are connected to the piezoelectric body and are drawn to the second surface of the supporting portion from the piezoelectric body, a reinforcement plate that is bonded to the second surface side of the element substrate, and a plurality of through electrodes that are provided at a position of the reinforcement plate which faces the supporting portion, pass through the reinforcement plate in a thickness direction, and are respectively connected to the plurality of connection electrodes. | 2017-06-01 |
20170155030 | PIEZOELECTRIC ELEMENT, METHOD OF FORMING PIEZOELECTRIC ELEMENT, AND ULTRASONIC DEVICE - A piezoelectric element includes a piezoelectric body that is provided on a substrate and includes multiple sides; a first wiring that is provided from the piezoelectric body to the substrate; and a second wiring that is provided from the piezoelectric body to the substrate. When the piezoelectric element is viewed from a thickness direction of the piezoelectric body, a second side and a fourth side on which the piezoelectric body is superimposed on the first wiring are different from a first side and a third side on which the second wiring is superimposed on the piezoelectric body. | 2017-06-01 |
20170155031 | ULTRASONIC MOTOR, DRIVE CONTROL SYSTEM, OPTICAL APPARATUS, AND VIBRATOR - Provided are an ultrasonic motor and a drive control system and the like using the ultrasonic motor. The ultrasonic motor includes an annular vibrator and an annular moving member arranged so as to be brought into pressure-contact with the vibrator. The vibrator includes an annular vibrating plate and an annular piezoelectric element. The piezoelectric element includes an annular piezoelectric ceramic piece, a common electrode arranged on one surface of the piezoelectric ceramic piece, and a plurality of electrodes arranged on the other surface of the piezoelectric ceramic piece. The piezoelectric ceramic piece contains lead in a content of less than 1,000 ppm. The plurality of electrodes include two drive phase electrodes, one or more non-drive phase electrodes, and one or more detection phase electrodes. | 2017-06-01 |
20170155032 | DIELECTRIC ELASTOMER DRIVING MECHANISM - A dielectric elastomer driving mechanism includes a driver, a follower, and a power transmitter. The driver includes a dielectric elastomer driving element made up of a dielectric elastomer layer and two electrode layers sandwiching the dielectric elastomer layer. The driver also includes a tension maintaining element maintaining, in a no-voltage state, the dielectric elastomer driving element in a state in which tension occurs, and includes an output portion capable of moving along with the expanding or contracting of the dielectric elastomer driving element. The follower includes a following element actuating in accordance with a driving force inputted. The power transmitter is connected to the output portion of the driver for transmitting a driving force of the driver to the follower. | 2017-06-01 |
20170155033 | PIEZOELECTRIC ELEMENT AND PIEZOELECTRIC ACTUATOR - A piezoelectric element includes a piezoelectric body, a first electrode, a second electrode, a third electrode, and a first through hole conductor. The piezoelectric body includes first and second main surfaces opposing each other, and first and second end surfaces opposing each other. The first electrode is disposed on the first main surface. The second electrode is disposed apart from the first electrode on the first main surface. The third electrode is disposed in the piezoelectric body to oppose the first electrode. The first through hole conductor is connected to the second and third electrodes. The piezoelectric body includes an active region and an inactive region. The active region includes a region from the first electrode to the third electrode. The inactive region includes a region from the third electrode to the second main surface. | 2017-06-01 |
20170155034 | PIEZOELECTRIC ELEMENT, PIEZOELECTRIC ACTUATOR, AND ELECTRONIC APPARATUS USING THE SAME - Provided is a piezoelectric element containing no lead therein and having satisfactory and stable piezoelectric properties in a temperature range in which the piezoelectric element is used. In order to attain this, the piezoelectric element includes a substrate, a first electrode, a piezoelectric film, and a second electrode. The piezoelectric film contains barium zirconate titanate, manganese, and bismuth in a charge disproportionation state in which trivalent Bi and pentavalent Bi coexist. The piezoelectric film satisfies 0.02≦x≦0.13, where x is a mole ratio of zirconium to the sum of zirconium and titanium. A manganese content is 0.002 moles or more and 0.015 moles or less for 1 mole of barium zirconate titanate, and a bismuth content is 0.00042 moles or more and 0.00850 moles or less for 1 mole of barium zirconate titanate. | 2017-06-01 |
20170155035 | PIEZOELECTRIC ELEMENT, PIEZOELECTRIC ACTUATOR, AND ELECTRONIC APPARATUS - Provided is a piezoelectric element containing no lead therein and having a satisfactory piezoelectric constant and a small dielectric loss tangent at room temperature (25° C.) In order to attain this, the piezoelectric element includes a substrate, a first electrode, a piezoelectric film, and a second electrode. The piezoelectric film contains barium zirconate titanate, manganese, and trivalent bismuth. The piezoelectric film satisfies 0.02≦x≦0.13, where x is a mole ratio of zirconium to the sum of zirconium and titanium. A manganese content is 0.002 moles or more and 0.015 moles or less for 1 mole of barium zirconate titanate, and a bismuth content is 0.00042 moles or more and 0.00850 moles or less for 1 mole of barium zirconate titanate. | 2017-06-01 |
20170155036 | PIEZOELECTRIC ELEMENT, PIEZOELECTRIC ACTUATOR AND ELECTRONIC INSTRUMENT USING THE SAME - A piezoelectric element comprises a substrate, a first electrode, a piezoelectric film and a second electrode that are sequentially laid in the above mentioned order. The piezoelectric film contains oxides of Ba, Bi, Ti, Zr, Fe and Mn and has a perovskite structure, wherein the molar ratio y of Bi relative to the sum of Ba and Bi is 0.001≦y≦0.015, the molar ratio x of Zr relative to the sum of Ti, Zr, Fe and Mn is 0.010≦x≦0.060, the molar ratio z of Fe relative to the sum of Ti, Zr, Fe and Mn is 0.001≦z≦0.015, and the molar ratio m of Mn relative to the sum of Ti, Zr, Fe and Mn is 0.0020≦m≦0.0150, while the relationship between y and z is expressed by 0.90≦y/z≦1.10. | 2017-06-01 |
20170155037 | PIEZOELECTRIC ELEMENT, METHOD OF MANUFACTURING PIEZOELECTRIC ELEMENT, PIEZOELECTRIC ACTUATOR, AND ELECTRONIC APPARATUS - Provided is a piezoelectric element including a substrate, electrodes, and a piezoelectric film, the piezoelectric film including an oxide including Ba, Ca, Ti, and Zr, and at least one element of Mn and Bi in which: 0.09≦x≦0.30 is satisfied, where x is a mole ratio of Ca to a sum of Ba and Ca; 0.025≦y≦0.085 is satisfied, where y is a mole ratio of Zr to a sum of Ti, Zr, and Sn; and 0≦z≦0.02 is satisfied, where z is a mole ratio of Sn to the sum of Ti, Zr, and Sn; a total content S | 2017-06-01 |
20170155038 | Methods and Systems for Making Piezoelectric Cantilever Actuators - A method of fabricating a microelectronic device comprising providing a substrate comprising a first bottom surface, providing a mold comprising a first top surface with first projections, and punching the first projections through the first bottom surface to define anchors, pre-cantilevers, and cavities in the substrate. A piezoelectric cantilever actuator system array prepared by a process comprising the steps of providing a substrate comprising a first bottom surface, providing a mold comprising a first top surface with first projections, and punching the first projections through the first bottom surface to define anchors, pre-cantilevers, and cavities in the substrate. A microelectronic device comprising a base, a first anchor coupled to the base, and a first cantilever coupled to the first anchor, wherein the base, the first anchor, and the first cantilever are an integral structure formed from the same substrate material. | 2017-06-01 |
20170155039 | ELECTRONIC DEVICE - This technology provides an electronic device. An electronic device in accordance with an implementation of this document may include a semiconductor memory, and the semiconductor memory may include a free layer including a plurality of magnetic layers each having a variable magnetization direction; a tunnel barrier layer formed over the free layer; and a pinned layer formed over the tunnel barrier layer and having a pinned magnetization direction; wherein the plurality of magnetic layers in the free layer includes a first magnetic layer in contact with the tunnel barrier layer and a second magnetic layer not in contact with the tunnel barrier layer and a sum of an exchange field between the first magnetic layer and the second magnetic layer and a stray field generated by the first magnetic layer is larger than or the same as a difference between a uniaxial anisotropy field of the second magnetic layer and a demagnetizing field due to a shape of the second magnetic layer. | 2017-06-01 |
20170155040 | ELECTRONIC DEVICE AND METHOD FOR FABRICATING THE SAME - Provided is an electronic device including a semiconductor memory. The semiconductor memory may include: a free layer comprising CoFeGeB alloy, and having a changeable magnetization direction that is perpendicular to the free layer; a tunnel barrier layer positioned over the free layer, and configured for enabling electron tunneling; a pinned layer positioned over the tunnel barrier layer, and having a pinned magnetization direction that is perpendicular to the pinned layer; and a bottom layer positioned under the free layer, and having a B2 structure to improve a perpendicular magnetic crystalline anisotropy of the free layer. | 2017-06-01 |
20170155041 | ARMATURE-CLAD MRAM DEVICE - A magnetoresistive memory cell includes a magnetoresistive tunnel junction stack and a dielectric encapsulation layer covering sidewall portions of the stack and being opened over a top of the stack. A conductor is formed in contact with a top portion of the stack and covering the encapsulation layer. A magnetic liner encapsulates the conductor and is gapped apart from the encapsulating layer covering the sidewall portions of the stack. | 2017-06-01 |
20170155042 | Magnetic Tunnel Junction Device - The output voltage of an MRAM is increased by means of an Fe(001)/MgO(001)/Fe(001) MTJ device, which is formed by microfabrication of a sample prepared as follows: A single-crystalline MgO (001) substrate is prepared. An epitaxial Fe(001) lower electrode (a first electrode) is grown on a MgO(001) seed layer at room temperature, followed by annealing under ultrahigh vacuum. A MgO(001) barrier layer is epitaxially formed on the Fe(001) lower electrode (the first electrode) at room temperature, using a MgO electron-beam evaporation. A Fe(001) upper electrode (a second electrode) is then formed on the MgO(001) barrier layer at room temperature. This is successively followed by the deposition of a Co layer on the Fe(001) upper electrode (the second electrode). The Co layer is provided so as to increase the coercive force of the upper electrode in order to realize an antiparallel magnetization alignment. | 2017-06-01 |
20170155043 | RESISTIVE RANDOM ACCESS MEMORY INCLUDING LAYER FOR PREVENTING HYDROGEN DIFFUSION AND METHOD OF FABRICATING THE SAME - A resistive random access memory is provided. The resistive random access memory includes a first electrode, a second electrode, a resistance changeable oxide layer, a hard mask layer, and a hydrogen barrier layer. The first electrode is disposed on a substrate. The second electrode is disposed between the first electrode and the substrate. The resistance changeable oxide layer is disposed between the first electrode and the second electrode. The hard mask layer is disposed on the first electrode. The hydrogen barrier layer is disposed between the hard mask layer and the first electrode. | 2017-06-01 |
20170155044 | NONVOLATILE RESISTANCE RANDOM ACCESS MEMORY DEVICE WITH LOW AND RELIABLE OPERATING VOLTAGE AND LONG-TERM STABILITY AND FABRICATION METHOD THEREOF - Disclosed are nonvolatile resistance random access memory device and a fabrication method thereof. The nonvolatile resistance random access memory device includes a lower electrode, an insulator film formed on a surface of the lower electrode, and an upper electrode formed over the insulator film, the lower electrode includes a base, and a thin metal layer formed on a surface of the base, and the lower electrode has a 3D structural pattern in which a plurality of protruding structures is repeatedly arranged at a constant interval. The 3D metal structures have a shape selected from among a pyramid (quadrangular pyramid), a trapezoidal pyramid (pyramid with a flat top), a pillar, and a prism. Uniform conductive filaments are formed via the space between the 3D metal structures, whereby the nonvolatile resistance random access memory device is capable of being driven at a low operating voltage and has long-term stability. | 2017-06-01 |
20170155045 | Method to Manufacture Highly Conductive Vias and PROM Memory Cells by Application of Electric Pulses - A memory device having a first array of first electrodes extending along a first direction made from a first material and a second array of second electrodes extending along a second direction made from a second material. An intersection defined by the first array and the second array, wherein each intersection of the first array and the second array defines a two-terminal resistive memory cell, said memory cell formed by a conductive path between said first and second electrodes. | 2017-06-01 |
20170155046 | INK COMPONENT MANAGEMENT METHOD, INKJET SYSTEM USING SAME, AND MANUFACTURING METHOD FOR MANUFACTURING ORGANIC EL DISPLAY DEVICE USING INKJET SYSTEM - A method of managing components of ink that can suppress changes in composition of a mixed solvent in ink that is stored in an inkjet device. A method for managing components of ink stored in an inkjet device under a negative pressure environment, the ink including a functional material, a first solvent, and a second solvent that has a higher boiling point and viscosity than the first solvent, the inkjet device discharging the ink via nozzles, the method including preparing a mixed solvent including a solvent identical to the first solvent and a solvent identical to the second solvent at a composition ratio that depends on a volatilization amount of the first solvent per unit time and a volatilization amount of the second solvent per unit time; and adding the mixed solvent to the ink stored in the inkjet device. | 2017-06-01 |
20170155047 | Electronic Device and Compound - The invention relates to an electronic device comprising a compound having Formula (1): AB | 2017-06-01 |
20170155048 | ORGANIC LIGHT-EMITTING DEVICE - An organic light-emitting device includes: a first electrode; a second electrode facing the first electrode; an emission layer between the first electrode and the second electrode; a hole transport region between the first electrode and the emission layer; and an electron transport region between the emission layer and the second electrode, wherein the hole transport region includes a first compound, the emission layer includes a second compound and a third compound, and the electron transport region includes a fourth compound and a fifth compound. An organic light-emitting device according to the one or more embodiments may have high efficiency and long lifespan. | 2017-06-01 |
20170155049 | ORGANIC LIGHT-EMITTING DEVICE - An organic light-emitting device including: a first electrode; a second electrode facing the first electrode; and an organic layer between the first electrode and the second electrode, the organic layer including an emission layer. The organic layer includes a first compound and the emission layer includes a second compound and a third compound. The second compound is a fluorescent host, the third compound is a fluorescent dopant, and the first compound, the second compound, and the third compound each independently includes at least one selected from moieties represented by Formulae A to D: | 2017-06-01 |
20170155050 | ORGANIC LIGHT-EMITTING DEVICE - An organic light-emitting device having a low driving voltage, high efficiency, and a long lifespan is provided. The device includes a first electrode, a second electrode, and an organic layer between the first electrode and the second electrode, wherein the organic layer includes an emission layer, a first compound, and a second compound. Various chemical structures for the first compound and the second compound are provided. | 2017-06-01 |
20170155051 | ELECTROLUMINESCENT CROSSLINKED NANOCRYSTAL FILMS - The present invention relates to an emissive film comprising a network of crosslinked nanocrystals, wherein said network of crosslinked nanocrystals is formed from reactive colloidal nanocrystals comprising a core comprising a semiconductive compound and at least one polythiol ligand, and wherein said core is surrounded by at least one polythiol ligand, and wherein each core surrounded by at least one polythiol ligand is crosslinked with at least one another polythiol ligand surrounding another core. The photoluminescent properties of the NCs are preserved once the film is formed. A light emitting device (LED) is fabricated using an emissive film as the emissive layer. The LED emits light when an electrical current flows through the device, which proves the electroluminescent properties of the NCs film. | 2017-06-01 |
20170155052 | MASK PLATE ASSEMBLY AND MANUFACTURING METHOD THEREOF, EVAPORATION APPARATUS AND MANUFACTURING METHOD OF DISPLAY SUBSTRATE - The present disclosure provides a method for manufacturing a mask plate assembly, which includes providing a mask plate and a frame and securing the mask plate to the frame. The secured mask plate comprises a redundant portion extending out of the frame. The method further comprises removing at least a part of the redundant portion, and dispensing glue in a predetermined area of a surface of the mask plate, and curing the glue to form a colloid, wherein the colloid is higher than any other area on the surface of the mask plate where the colloid is not formed. The present disclosure further provides a mask plate assembly comprising a frame, and a mask plate secured to the frame, wherein a colloid is formed in a predetermined area of a surface of the mask plate, and the colloid is higher than any other area on the surface of the mask plate where the colloid is not formed. The present disclosure further provides an evaporation device and a method for manufacturing the display substrate. | 2017-06-01 |
20170155053 | Molecular and Polymeric Semiconductors and Related Devices - The present invention relates to new semiconducting compounds having at least one optionally substituted benzo[d][1,2,3]thiadiazole moiety. The compounds disclosed herein can exhibit high carrier mobility and/or efficient light absorption/emission characteristics, and can possess certain processing advantages such as solution-processability and/or good stability at ambient conditions. | 2017-06-01 |
20170155054 | ORGANIC LIGHT-EMITTING DEVICE - An organic light-emitting device including: a first electrode; a second electrode; and an organic layer between the first electrode and the second electrode, the organic layer including an emission layer, wherein the organic layer includes a first compound represented by Formula 1 and a second compound represented by Formula 2: | 2017-06-01 |
20170155055 | ORGANIC LIGHT EMITTING DISPLAY DEVICE - An organic light emitting display device is provided. The organic light emitting display device includes at least two or more light emitting parts each having a light emitting layer and an electron transport layer; and a charge generation layer between the at least two or more light emitting parts. The charge generation layer comprises a compound that includes a core with two nitrogen atoms and a functional group having crystallinity. | 2017-06-01 |
20170155056 | COMPOUND AND ORGANIC LIGHT-EMITTING DEVICE - An organic light-emitting device including: a first electrode; a second electrode facing the first electrode; and an organic layer between the first electrode and the second electrode, the organic layer including an emission layer, wherein the organic layer includes a compound represented by Formula 1: | 2017-06-01 |
20170155057 | CONDENSED CYCLIC COMPOUND AND ORGANIC LIGHT-EMITTING DEVICE INCLUDING THE SAME - An organic light-emitting device includes: a first electrode; a second electrode facing the first electrode; and an organic layer between the first electrode and the second electrode, the organic layer including an emission layer, a hole transport region between the first electrode and the emission layer, and an electron transport region between the emission layer and the second electrode, the organic layer including the condensed cyclic compound of Formula 1: | 2017-06-01 |
20170155058 | CONDENSED CYCLIC COMPOUND AND ORGANIC LIGHT-EMITTING DEVICE INCLUDING THE SAME - A condensed cyclic compound and an organic light-emitting device including the same. The organic light-emitting device includes: a first electrode; a second electrode facing the first electrode; and an organic layer between the first electrode and the second electrode, the organic layer including an emission layer. The organic layer includes at least one condensed cyclic compound represented by Formula 1: | 2017-06-01 |
20170155059 | ORGANIC COMPOUND, FIELD ELEMENT, ORGANIC LIGHT-EMITTING ELEMENT, DISPLAY APPARATUS, IMAGE INFORMATION-PROCESSING APPARATUS, LIGHTING APPARATUS, IMAGE-FORMING APPARATUS, AND EXPOSURE APPARATUS - A bibenzo[d]imidazolidene compound inert to oxygen is provided. A 1,1′,3,3′-tetraphenyl-2,2′-bibenzo[d]imidazolidene compound is represented by general formula (1). In formula (1), R | 2017-06-01 |
20170155060 | CHARGE-TRANSPORTING VARNISH, CHARGE-TRANSPORTING THIN FILM AND METHOD FOR MANUFACTURING SAME, AND ORGANIC ELECTROLUMINESCENT ELEMENT AND METHOD FOR MANUFACTURING SAME - The invention provides a charge-transporting varnish, containing a charge-transporting substance formed of an indolocarbazole represented by the following formula (1), a dopant substance, and an organic solvent. | 2017-06-01 |
20170155061 | ORGANIC ELECTROLUMINESCENT MATERIALS AND DEVICES - An organic light emitting device is disclosed whose emissive layer has a host material, a first emissive dopant, and a second dopant. The second dopant is an excited energy state managing dopant provided in an amount between 2-10 vol. % of the emissive layer and has a lowest triplet state energy level, T | 2017-06-01 |
20170155062 | COMPOUNDS FOR ELECTRONIC DEVICES - The present invention relates to compounds of the formula (1) or (2) and to the use thereof in electronic devices, and to electronic devices which comprise these compounds. The invention furthermore relates to the preparation of the compounds of the formula (1) or (2) and to formulations comprising one or more compounds of the formula (1) or (2). | 2017-06-01 |
20170155063 | ORGANIC METAL COMPOUND, ORGANIC LIGHT-EMITTING DEVICES EMPLOYING THE SAME - Organic metal compounds, and organic light-emitting devices employing the same are provided. The organic metal compound has a chemical structure represented by formula (I): | 2017-06-01 |
20170155064 | Organic Electroluminescent Materials and Devices - This invention relates to the development of heterocyclic materials for use as blue phosphorescent materials in OLED devices. The materials were determined computationally to have appropriate triplet energies for use as blue emitters and to possess sufficient chemical stability for use in devices. | 2017-06-01 |
20170155065 | ORGANIC METAL COMPOUND, ORGANIC LIGHT-EMITTING DEVICES EMPLOYING THE SAME - Organic metal compounds, and organic light-emitting devices employing the same are provided. The organic metal compound has a chemical structure represented by Formula (I) or Formula (II): | 2017-06-01 |
20170155066 | DISPLAY APPARATUS AND ELECTRONIC APPARATUS - Disclosed herein is a display apparatus, including: a foldable substrate; a pixel array section including a plurality of pixels disposed on the substrate and each including an electro-optical device; the foldable substrate being folded at a substrate end portion at least on one side thereof around the pixel array section; a peripheral circuit section disposed on the substrate end portion and adapted to drive the pixels of the pixel array section; and a pad section provided on the substrate end portion on which the peripheral circuit section is provided and adapted to electrically connect the peripheral circuit section to the outside of the substrate. | 2017-06-01 |
20170155067 | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE - Disclosed are a manufacturing method capable of manufacturing a semiconductor device having a plurality of organic semiconductor elements with a simple process and high productivity, and a semiconductor device. This problem is solved by forming, on an insulating substrate, electrodes corresponding to a plurality of semiconductor elements, in which the position of an uppermost portion of each of a source electrode and a drain electrode is higher than that of a gate electrode, forming an organic semiconductor film on a surface of an insulating support, forming grooves in the organic semiconductor film to form divided regions according to the individual semiconductor elements, and aligning and laminating the insulating support and the insulating substrate. | 2017-06-01 |
20170155068 | HYBRID HETEROJUNCTION PHOTOVOLTAIC DEVICE - A photovoltaic device includes an inorganic substrate having a surface; an organic monolayer disposed onto the surface of the inorganic substrate, the inorganic monolayer having the following formula: ˜X—Y, wherein X is an oxygen or a sulfur; Y is an alkyl chain, an alkenyl chain, or an alkynyl chain; and X covalently bonds to the surface of the inorganic substrate by a covalent bond; a doped organic material layer disposed onto the organic monolayer; and a conductive electrode disposed onto a portion of the doped organic material. | 2017-06-01 |
20170155069 | PHOTOELECTRIC CONVERSION ELEMENT AND METHOD FOR MANUFACTURING THE SAME - According to one embodiment, a photoelectric conversion element includes a first electrode, a second electrode, a photoelectric conversion layer, and a first layer. The second electrode includes a base member and a first material portion. The base member includes a plurality of structure bodies including carbon. The first material portion includes a carrier transport material and is provided between the structure bodies. The photoelectric conversion layer is provided between the first electrode and the second electrode. The photoelectric conversion layer includes a material having a perovskite structure. The first layer is provided between the photoelectric conversion layer and the second electrode. The first layer includes the carrier transport material. | 2017-06-01 |
20170155070 | ORGANIC LIGHT EMITTING DIODE DISPLAY - An organic light emitting display device includes: a first light emitting unit including a first light emitting layer; and a second light emitting unit on the first light emitting unit including a second light emitting layer. The first light emitting layer includes at least one dopant and at least two hosts. The at least two hosts are different from each other in electron mobility and hole mobility. | 2017-06-01 |
20170155071 | ORGANIC LIGHT EMITTING DISPLAY DEVICE - Discussed is an organic light emitting display device. The organic light emitting display device can include a first emission part, a second emission part on the first emission part, and a first P-type charge generation layer between the first emission part and the second emission part. The first emission part includes a first hole transport layer, a first emission layer, and a first electron transport layer. The second emission part includes a second hole transport layer, a second emission layer, and a second electron transport layer. The second hole transport layer and the first P-type charge generation layer are disposed adjacent to each other. The second hole transport layer includes a first material and a second material. The first material has an absolute value of a HOMO energy level which can be greater than an absolute value of a LUMO energy level of the first P-type charge generation layer. | 2017-06-01 |
20170155072 | LIGHT-EMITTING ELEMENT, LIGHT-EMITTING DEVICE, ELECTRONIC DEVICE, AND LIGHTING DEVICE - A light-emitting element that includes a fluorescent material and has a high emission efficiency is provided. A light-emitting element in which a delayed fluorescence component due to TTA accounts for a high proportion of emissive components is provided. A novel light-emitting device with a high emission efficiency and a low power consumption is provided. A light-emitting element includes an anode, a cathode, and an EL layer. The EL layer includes a light-emitting layer including a host material and an electron-transport layer including a first material in contact with the light-emitting layer. The LUMO level of the first material is lower than that of the host material. The proportion of a delayed fluorescence component due to TTA is greater than or equal to 10 percent of the light emission from the EL layer. The proportion of the delayed fluorescence component due to TTA may be greater than or equal to 15 percent of the light emission. | 2017-06-01 |
20170155073 | ORGANIC LIGHT EMITTING DISPLAY DEVICE - An organic light emitting display device according to an embodiment includes: a first anode electrode, a second anode electrode, and a third anode electrode, each anode electrode being spaced apart from each other; a bank disposed on edges of the first to third anode electrodes; a third hole transporting layer disposed on the first to third anode electrodes and the bank, and having a third hole mobility; a first hole transporting layer disposed on the third hole transporting layer and having a first hole mobility higher than the third hole mobility; and a second hole transporting layer disposed next to the first hole transporting layer on the third hole transporting layer and having a second hole mobility higher than the third hole mobility. | 2017-06-01 |
20170155074 | ORGANIC EMITTING DIODE AND ORGANIC LIGHT EMITTING DIODE DISPLAY DEVICE INCLUDING THE SAME - The present invention provides an organic emitting diode including a first electrode; a second electrode facing the first electrode; an emitting material layer between the first and second electrodes; and an intervening layer between the emitting material layer and the second electrode and including a base material and an electron injection material, wherein the intervening layer contacts the second electrode. | 2017-06-01 |
20170155075 | ORGANIC LIGHT-EMITTING DISPLAY APPARATUS AND FABRICATION METHOD THEREOF - The present disclosure provides an organic light-emitting display apparatus and a fabrication method thereof. The organic light-emitting display apparatus comprises a substrate having a device component layer; first electrodes disposed over the device component layer; a pixel-defining layer having opening regions to expose the first electrodes formed over the device component layer; photo spacers, disposed on the pixel-defining layer, and surrounding at least one opening region to provide a first photo spacer group along the at least one opening region in a first direction and provide a second photo spacer group along the at least one opening region in a second direction; an organic light-emitting layer disposed in the opening regions of the pixel-defining layer and in contact with the first electrodes; and a second electrode disposed on the light-emitting layer. The first photo spacer group has a continuous projection on the first direction, and the second photo spacer group has a continuous projection on the second direction. | 2017-06-01 |
20170155076 | OLED DISPLAY DEVICE AND METHOD FOR MANUFACTURING THE SAME - An OLED display device and a method for manufacturing the OLED display device are disclosed. The OLED display device comprises a substrate, a TFT, a pixel electrode, a hole transport layer, an emitting material layer, an electron transport layer, and a cathode that are formed in sequence. The pixel electrode which is electrically connected with the TFT comprises a conductive metal layer and a protection layer that is formed on the conductive metal layer. According to the present disclosure, the pixel electrode is formed through electroplating procedure, and thus the manufacturing procedure of the display device can be simplified compared with the complicated sputtering procedure. | 2017-06-01 |
20170155077 | FLEXIBLE OLED AND MANUFACTURE METHOD THEREOF - The present invention provides a flexible OLED and a manufacture method thereof. The flexible OLED is capable of decreasing the resistance of the second electrode ( | 2017-06-01 |
20170155078 | ORGANIC LIGHT EMITTING DISPLAY DEVICE - Provided is an organic light emitting display device in which a plurality of pixel areas each including an emitting area and a non-emitting area is defined in a display area. The organic light emitting display device includes: an auxiliary electrode in a part of a non-emitting area of at least one pixel area; an auxiliary electrode contact portion formed as a part of the auxiliary electrode; a first electrode in the emitting areas of the plurality of pixel areas; an organic layer on the first electrode and the auxiliary electrode; and a second electrode on the organic layer. The auxiliary electrode contact portion electrically connects the auxiliary electrode and the second electrode. A distance from a center of the auxiliary electrode contact portion to a terminal end of the first electrode in the emitting area may be 3 μm or more. | 2017-06-01 |
20170155079 | SHORTS PREVENTION IN ORGANIC LIGHT-EMITTING DIODES - An organic light emitting diode comprising a first electrode layer, a second electrode layer, a stack of functional layers, including an organic light-emitting layer, sandwiched between said first electrode layer and said second electrode layer, and an passivation layer arranged adjacent to said first electrode layer is disclosed. The passivation layer reacts with the first electrode layer to form an oxide at a reaction temperature that is induced by an evolving short circuit between the first electrode layer and the second electrode layer. The passivation layer is unreactive at temperatures lower than the reaction temperature. | 2017-06-01 |
20170155080 | DISPLAY APPARATUS - A display apparatus includes a first substrate corresponding to a display area and a surrounding area, a second substrate facing the first substrate, a seal member between the first substrate and the second substrate for bonding the first substrate and the second substrate to each other, a seal auxiliary portion between the first substrate and the seal member, and including a non-corner portion, and a corner portion, at least a portion of which extending beyond an extension line of the non-corner portion. | 2017-06-01 |
20170155081 | THIN-FILM PACKAGING METHOD AND ORGANIC LIGHT-EMITTING DEVICE - A thin-film packaging method and an organic light-emitting device are provided. The method includes following steps: forming an OLED layer on a TFT substrate, forming a first inorganic packaging layer on the OLED layer, forming a coupling agent unit on the first inorganic packaging layer, and forming an organic packaging layer on the coupling agent unit. Wherein, the organic packaging layer includes a buffer sublayer and a resist sublayer sequentially formed. The coupling agent unit generates chemical reactions with the first inorganic packaging layer and the buffer sublayer in order to increase an adhesive strength between the first inorganic packaging layer and the organic packaging layer so that they are not easily to be separated, and have a good water and oxygen insulation property. | 2017-06-01 |
20170155082 | Encapsulating Structure of Flexible OLED Device And Flexible Display Device - An encapsulating structure for encapsulating a flexible OLED device includes a flexible substrate, a first flexible thin film encapsulating layer, a TFT array, an OLED device, a second flexible thin film encapsulating layer, an adhesion layer, a third flexible thin film encapsulating layer, and a polarizer layered in order. One or more barrier layers are arranged on the TFT array disposed on lateral sides of the OLED device, and the second flexible thin film encapsulating layer covers the OLED device and the one or more barrier layers. The present invention also proposes a display device having the encapsulating structure. | 2017-06-01 |
20170155083 | ORGANIC LIGHT EMITTING DIODE PACKAGING METHOD AND PACKAGING STRUCTURE AND DEVICE HAVING THE SAME - The present invention discloses a packaging method for an organic light emitting diode including: providing a first substrate that is made of metallic foil; providing an organic light emitting diode on the first substrate; providing, outside the organic light emitting diode, a passivation layer for covering the organic light emitting diode; coating an encapsulation adhesive onto the first substrate entirely, so that the encapsulation adhesive covers the passivation layer; providing a second transparent substrate at least on a portion of the encapsulation adhesive covering the passivation layer; and curing the encapsulation adhesive, to form a package of the organic light emitting diode. The present invention also discloses a packaging structure for an organic light emitting diode, and an organic light emitting diode device having the packaging structure. | 2017-06-01 |
20170155084 | FLEXIBLE DISPLAY DEVICE - A flexible display device includes a display module and a window member disposed on the display module. The window member includes a base film, elastomer patterns disposed on one surface of the base film, and a hard coating layer disposed on the one surface of the base film to cover the elastomer patterns. | 2017-06-01 |
20170155085 | Organic Light-Emitting Display Apparatus - An organic light-emitting display (OLED) apparatus includes an organic light-emitting device including an anode, an organic light-emitting layer, and a cathode. The OLED apparatus also includes an encapsulation element covering the organic light-emitting device, and a particular layer disposed between the organic light-emitting device and the encapsulation element. The particular layer is doped with a light absorption material that absorbs light having a wavelength shorter than a wavelength of light emitted from the organic light-emitting device so that variation in characteristics of the organic light-emitting device by external light is reduced. Accordingly, the lifespan of the OLED apparatus can be improved. | 2017-06-01 |
20170155086 | Organic Light-Emitting Display Device - Disclosed herein is an organic light-emitting display (OLED) device. The OLED device includes a pixel drive circuit and an organic light-emitting element on an array substrate, a passivation layer covering the pixel drive circuit and the organic light-emitting element so as to block permeation of moisture, and an adhesive layer on the passivation layer. The passivation layer is an inorganic thin film including an organosilicon compound. | 2017-06-01 |
20170155087 | CURVED DISPLAY DEVICE - A curved display device has a plurality of layers including elements for implementing an input image, and has a neutral plane (NP), a first area positioned in any one of upper and lower sides of the NP with compressive stress applied thereto, and a second area positioned in the other of the upper and lower sides of the NP with a tensile stress applied thereto The curved display device includes at least one first curved portion; and at least one second curved portion bent in a direction different from a direction of the first curved portion. The first curved portion and the second curved portion are different in thickness, and positions of the NPs. | 2017-06-01 |
20170155088 | DISPLAY DEVICE AND FABRICATING METHOD THEREOF - Discussed is a display device and a fabricating method thereof according to an embodiment, in which an organic-inorganic composite film is patterned without a mask by using an anti-film layer, and a residual anti-film layer protects a pad portion. The display device comprises a lower substrate; pixels arranged on a display area of the lower substrate; pads arranged on a non-display area of the lower substrate; an encapsulation layer arranged on the pixels; and an anti-film layer arranged on the pads as a molecular layer having a thickness of a single molecule. Also, the fabricating method of the display device comprises the steps of forming pads on a non-display area of a lower substrate and forming pixels on a display area; and forming an anti-film layer on the pixels as a molecular layer having a thickness of a single molecule. | 2017-06-01 |
20170155089 | PACKAGING STRUCTURE, DISPLAY DEVICE, AND FABRICATION METHOD THEREOF - A packaging structure includes at least one inorganic layer and at least one passivation layer. The at least one passivation layer includes a halogen-containing amorphous solid oxide thin film. The amorphous solid oxide thin film in the at least one passivation layer has a crosslinked-polyhedra-network structure. A display device includes a substrate, a display layer, and a packaging structure. The packaging structure further includes at least one inorganic layer and at least one passivation layer. The at least one passivation layer includes a halogen-containing amorphous solid oxide thin film. The amorphous solid oxide thin film in the at least one passivation layer has a crosslinked-polyhedra-network structure. A method for fabricating a display device includes providing a substrate, forming a display layer over the substrate, and forming a packaging structure over the display layer with the packaging structure including at least one inorganic layer and at least one passivation layer. | 2017-06-01 |
20170155090 | BARRIER FILM, ORGANIC EL DEVICE, FLEXIBLE SUBSTRATE, AND METHOD FOR MANUFACTURING BARRIER FILM - A barrier film that contains primarily silicon nitride has a total hydrogen concentration of 3×10 | 2017-06-01 |
20170155091 | Light Emitting Device and Method for Manufacturing the Same - When attaching a substrate with an EL element formed thereon and a transparent sealing substrate, the periphery of a pixel portion is surrounded with a first sealing agent that maintains a gap between the two pieces of substrates, an entire surface of the pixel portion is covered with a second transparent sealing agent so that the two pieces of substrate is fixed with the first sealing agent and the second sealing agent. Consequently, the EL element can be encapsulated by curing the first sealing agent and the second sealing agent without enclosing a drying agent and doing damage to the EL element due to UV irradiation even when a sealing device only having a function of UV irradiation is used. | 2017-06-01 |