23rd week of 2018 patent applcation highlights part 56 |
Patent application number | Title | Published |
20180158608 | ELECTRONIC COMPONENT - An electronic component includes a multilayer capacitor and an interposer including a substrate main body with an electric insulation property, the multilayer capacitor being mounted on one main surface side of the substrate main body. The multilayer capacitor includes a multilayer body, a first outer electrode, and a second outer electrode. The multilayer body includes an effective region and a non-effective region surrounding the effective region. A width of the effective region is larger than a width of the substrate main body, when a width of the multilayer body is represented by W | 2018-06-07 |
20180158609 | CAPACITOR AND MANUFACTURING METHOD THEREFOR - The present invention provides a capacitor including a conductive porous base material with a porous part, a dielectric layer and an upper electrode. The porous part, the dielectric layer, and the upper electrode are stacked on top of one another in this order to define a capacitance formation part. The capacitance format ion part is not present at a lateral end part of the porous part. | 2018-06-07 |
20180158610 | CAPACITOR AND METHOD FOR MANUFACTURING THE SAME - A capacitor that includes a conductive base material with high specific surface area, a dielectric layer covering the conductive base material with high specific surface area, and an upper electrode covering the dielectric layer, in which the conductive base material with high specific surface area is formed of a metal sintered body as a whole. | 2018-06-07 |
20180158611 | CAPACITOR AND METHOD FOR MANUFACTURING THE SAME - A capacitor that includes a conductive porous base material having a porous portion; a dielectric layer on the porous portion; and an upper electrode on the dielectric layer. In the porous portion of the conductive porous base material, a portion having a base material thickness between pores of 1.2 times or less of a thickness of the dielectric layer exits in 5% or more of the entire porous portion, and the dielectric layer is formed from a compound including atoms having an origin different from an origin of the conductive porous base material. | 2018-06-07 |
20180158612 | Dielectric Composition, Dielectric Element, Electronic Component and Laminated Electronic Component - A dielectric composition, a dielectric element, an electronic component and a laminated electronic component are disclosed. In an embodiment the dielectric composition includes a perovskite compound comprising a main component having Bi, Na, Sr, Ln and Ti, wherein Ln is at least one type of a rare earth element, and wherein a mean crystal grain size is between 0.1 μm and 1 μm. | 2018-06-07 |
20180158613 | Capacitor Arrangement - A capacitor arrangement is disclosed. In an embodiment the arrangement includes a ceramic multilayer capacitor including a main body comprising ceramic layers, first electrode layers and second electrode layers arranged there between and a first external contact and a second external contact on mutually opposite side surfaces, wherein the first external contact is electrically conductively connected to the first electrode layers and the second external contact is electrically conductively connected to the second electrode layers. | 2018-06-07 |
20180158614 | MULTILAYER CERAMIC ELECTRONIC COMPONENT AND BOARD HAVING THE SAME - A multilayer ceramic electronic component includes a body with a plurality of first and second internal electrodes alternately arranged with dielectric layers interposed therebetween. There may be M each of third and fourth external electrodes on opposing sides of the body, where M is greater than or equal to 3 and all external electrodes have different polarities than the adjacent external electrodes. There may be N via electrodes penetrating through the body, where N is greater than or equal to 3 and the via electrodes are connected to either of the first or second internal electrodes. The multilayer ceramic electronic component may achieve low equivalent series inductance (ESL) characteristics and may reduce the mounting area on the circuit board. | 2018-06-07 |
20180158615 | MULTILAYER CAPACITORS - A multilayer capacitor may include a capacitor stack having pluralities of first and second plate electrodes connected to respective stack face terminals. Two face terminals on different stack sides are connected to the first plate electrodes. Two different face terminals also on different stack sides are connected to the second plate electrodes. Respective base conductors connect to the two sets of face terminals for connecting the capacitor to an external circuit. Three face terminals may be connected to the first or second plate electrodes. The base conductors may connect to the face terminals at the same relative position of the capacitor stack, at different relative positions of the capacitor stack. A capacitor stack may be positioned with a stack end facing a base substrate. Two multilayer capacitors may be mounted electrically in parallel with one or more lossy elements spanning a gap between the capacitors. | 2018-06-07 |
20180158616 | MULTILAYERED ELECTRODE AND FILM ENERGY STORAGE DEVICE - The present disclosure provides a multilayered electrode comprising an electro-conductive layer and at least one protective layer located on one side of the electro-conductive layer and selected from the list comprising a field-planarization layer, a tunneling injection blocking layer and a coulomb blocking layer. | 2018-06-07 |
20180158617 | CAPACITIVE ENERGY STORAGE DEVICE - Capacitive energy storage devices (CESDs) are disclosed, along with methods of making and using the CESDs. A CESD includes an array of electrodes with spaces between the electrodes. A dielectric material occupies spaces between the electrodes; regions of the dielectric material located between adjacent electrodes define capacitive elements. The disclosed CESDs are useful as energy storage devices and/or memory storage devices. | 2018-06-07 |
20180158618 | ELECTROLYTIC CAPACITOR AND METHOD FOR PRODUCING SAME - An electrolytic capacitor includes: an anode body; a dielectric layer formed on the anode body; a first conductive polymer layer which covers at least a portion of the dielectric layer; and a second conductive polymer layer which covers at least a portion of the first conductive polymer layer. The first conductive polymer layer includes a first layer and a second layer. The first layer contains a first conductive polymer and a first dopant, and covers at least a portion of the dielectric layer. The second layer is formed on the first layer, and contains a first silane compound. The second conductive polymer layer contains a second conductive polymer, a second dopant, and a basic compound. | 2018-06-07 |
20180158619 | ELECTROLYTIC CAPACITOR - An electrolytic capacitor includes: an anode body having a dielectric layer; a solid electrolyte layer in contact with the dielectric layer; and an electrolytic solution. The electrolytic solution contains a solvent and a solute. The solvent contains a glycol compound. The solute contains a carboxylic acid component and a base component. A ratio of the carboxylic acid component in the solute is 200 parts by mass or more with respect to 100 parts by mass of the base component. | 2018-06-07 |
20180158620 | DYE-SENSITIZED SOLAR CELL - The present invention relates to a dye-sensitized solar cell, and in the present invention, in order to substantially increase the overall outer path line of the electrolyte injection hole, a structure of a corresponding electrolyte injection hole is improved such that the structure comprises: an inlet part exposed to the outside of a reception cell; a delivery part, which extends in a direction differing from that of the inlet part while being connected to the inlet part; and an outlet part, which extends in a direction differing from that of the delivery part while being connected to the delivery part and the reception cell, thereby inducing a large increase in the overall path of a tiny gap, which is formed between an interface of the electrolyte injection hole and a bonding stopper filled in the electrolyte injection hole. | 2018-06-07 |
20180158621 | CARBONACEOUS NANOPARTICLES, METHODS OF MAKING SAME AND USES THEREOF - Compositions of carbonaceous nanoparticle fabrication and their use for electrode materials in supercapacitors are provided. The supercapacitor includes a first electrode having a first substrate and carbonaceous nanoparticles; a second electrode comprising a second substrate and carbonaceous nanoparticles; a separator positioned between the first electrode and the second electrode; and an electrolyte. Methods of making an electrode for a supercapacitor are also provided. | 2018-06-07 |
20180158622 | GRAPHENE-BASED ELECTROACTIVE NANOFLUIDS AS LIQUID ELECTRODES IN FLOW CELLS - The invention relates to VERY stable electroactive nanofluids comprising graphene-based compounds, and the production methods thereof. The invention also relates to the use of said electroactive nanofluids as liquid electrodes for the storage of energy in flow cells. | 2018-06-07 |
20180158623 | METHOD FOR MANUFACTURING ELECTROCHEMICAL DEVICE - A method for manufacturing an electrochemical device in which an electrode assembly in which two types of electrodes are superposed on each other with a separator | 2018-06-07 |
20180158624 | WINDER - A winder includes a winding mechanism, a chamber housing the winding mechanism, at least one vacuum pump, and a product case. The winding mechanism is configured to wind a belt-shaped raw film around a winding core. The belt-shaped raw film is composed of a plurality of electrodes and a plurality of separating films. The at least one vacuum pump is configured to suck air into the chamber. The product case is configured to house a plurality of winding products each formed by winding the raw film with use of the winding mechanism disposed in the chamber. | 2018-06-07 |
20180158625 | BI-STABLE DISPLAY - Particular embodiments described herein provide a keycap that includes a plurality of front plane elements, where each front plane element includes a top electrode, a conductive region under each of the plurality of front plane elements, where each conductive region includes a bottom electrode and a top electrode coupling area, where each top electrode coupling area is electrically coupled to a common top electrode node, an electrical path between each top electrode and each corresponding top electrode coupling area such that each top electrode is connected to the common top electrode node, and a dielectric between each top electrode and each bottom electrode. | 2018-06-07 |
20180158626 | WIRELESS SWITCH - A wireless switch includes a button member, a power generation module, an RF module, and a notification unit. The button member is mounted in a housing, and is configured to move. The power generation module is configured to generate power using energy produced by the movement of the button member. The RF module is connected to the power generation module, and is configured to transmit a switch signal using power generated by the power generation module. The notification unit is configured to operate using power generated by the power generation module. The RF module controls the notification unit in one or more notification states according to a strength or details of a reception state signal corresponding to the transmitted switch signal. | 2018-06-07 |
20180158627 | OPERATING DEVICE - Disclosed herein is an operating device including: a circuit board; a frame arranged on top of the circuit board; a plate-shaped operating member located relative to the frame and including a surface touched by a user's finger and a touch sensor adapted to detect the position of the user's finger that has touched the surface, the plate-shaped operating member being arranged to be able to move up and down so that the operating member can be pressed by the user; and an elastic member arranged between the frame and operating member to bias the operating member upward. | 2018-06-07 |
20180158628 | TERMINAL ASSEMBLY FOR VACUUM CONTACTOR SWITCH - The present disclosure relates a terminal assembly for a vacuum contactor switch which is connected to a terminal of a cradle with electricity applicability to protect a power system by breaking circuits in the event of a dangerous situation such as a short circuit or an overcurrent. The terminal assembly includes a body portion, a connecting member, a contactor and a bush. The body portion is inserted into a terminal hole formed in the terminal of the cradle and provided with first fastening holes formed in opposite side surface thereof. The contactor is connected to one end of the body portion through a connecting member. The bush has a pair of pieces disposed to surround a periphery of the body portion with both ends of one of the pieces facing both ends of the other piece. | 2018-06-07 |
20180158629 | AIR CIRCUIT BREAKER - The present invention relates to an air circuit breaker, in which a recess is formed on one side or each of both sides of each contact plate provided in an insulating cage so as to reduce a contact area between a movable contactor and the contact plate when the movable contactor and the contact plate are brought into contact with each other, thereby preventing a contact portion between the movable contactor and the contact plate from being melted due to heat generation. | 2018-06-07 |
20180158630 | Switching Device And An Electric Power Distribution Switchgear - A power distribution switchgear including a housing to which a switch is mounted, housing has an opening, the first and second electric contact connected to a first and second conductors. A rotating operating shaft of inserted into the opening, and an actuator having a first end coupled to the shaft and a second end coupled to the second contact. The actuator and shaft made of an electrically insulating material. The shaft supported in the housing by the actuator member. The interface is located at a distance D from the longitudinal axis Y of the shaft that is longer than a distance d between axis Y and a circumferential edge that delimits the opening. | 2018-06-07 |
20180158631 | POWER-ASSISTED MAGNETIC PROXIMITY SWITCH - A power-assisted magnetic proximity switch comprises a shell; the inner chamber of the shell is provided with a magnet, a first terminal and a second terminal; the first terminal and the second terminal are disposed in parallel at intervals, and each terminal vertically penetrates into the lower end plate of the shell; the upper end of the second terminal is transversely provided with an elastic contact piece; the free end of the elastic contact piece is disposed above the first terminal; a power-assisted rod is disposed in the shell, and the outer end of the power-assisted rod is hinged with the shell; an elastic tongue piece is disposed on the elastic contact piece. | 2018-06-07 |
20180158632 | POWER GENERATION APPARATUS AND WIRELESS SWITCH - A wireless switch includes a cover member, a button member, a first plunger, a second plunger, a trigger spring, a return spring, a shaft, a housing, and a power generation module. An intermediate member constituted of the first plunger, the second plunger, the trigger spring, the return spring, and the shaft is connected between the button member and the power generation module. The intermediate member prevents a position of the shaft making contact with the power generating shaft of the power generation module from changing, and causes stress to build up in the trigger spring, until a movement distance of the button member reaches a predetermined distance. The intermediate member releases the stress built up in the trigger spring and pushes the power generation shaft with the shaft using the released stress upon the movement distance of the button member reaching the predetermined distance. | 2018-06-07 |
20180158633 | CALIBRATION AND USE OF MECHANICAL RELAY AT ZERO CROSS - This disclosure describes systems, methods, and apparatus for determining a relay delay for a relay of a relay device used to switch AC power to and from a load. The relay delay can be pre-determined as a model or polynomial including variables for temperature and age, such that the switching instructions can be sent to the rely a relay delay before a zero crossing of the AC signal that the relay is switching, and where the relay delay accounts for temperature and age of the relay in real time or near real time. | 2018-06-07 |
20180158634 | ELECTROMAGNETIC CONTACTOR - There is provided an electromagnetic contactor which can easily and inexpensively change the DC operation type to the AC operation type. The electromagnetic contactor includes an electromagnet that opens and closes a contact by using DC excitation of a coil, a lower case that accommodates the electromagnet, external coil terminals that are disposed in the lower case beside the electromagnet, and a substrate that is accommodated in the lower case, and that has a rectifier circuit whose input side is connected to the external coil terminals and whose output side is connected to the coil so as to output a DC after converting an input AC to the DC. An inner surface of the lower case has a groove between the electromagnet and the external coil terminals. The substrate is held by being inserted into the groove. | 2018-06-07 |
20180158635 | ELECTROMAGNETIC CONTACTOR - There is provided an electromagnetic contactor that ensures appropriately preventing a foreign matter from invading an auxiliary contact mechanism housing chamber from a main contact mechanism housing chamber via a through-hole on a partition wall; and a foreign matter from invading the main contact mechanism housing chamber from the auxiliary contact mechanism housing chamber via the through-hole on the partition wall. With an electromagnetic contactor ( | 2018-06-07 |
20180158636 | LEAKAGE PROTECTIVE PLUG - A leakage protective plug and a tripping mechanism thereof, comprising a housing, and a tripping mechanism and a conducting structure arranged within the housing, wherein the tripping mechanism comprises a restorable reset button, a tripping bracket, and a tripping coil and a pressing arm arranged in the tripping bracket, wherein the reset button is sleeved in the pressing arm in which a snap fitting mechanism is positioned such that the pressing arm and the reset button may be snapped together, and the pressing arm and the reset button may be disengaged under the control of the tripping coil. It has a simple and reliable structure, and avoids technical problems including poor contact of supply circuit and failure of power leakage protecting functions due to un-complete tripping which are resulted from the deformation of the tripping plate caused by the movement of the tripping iron core and by other external forces. | 2018-06-07 |
20180158637 | CHARGING DEVICE OF AIR CIRCUIT BREAKER - A first support member and a second support member are provided in a rotation support device and a worm gear is rotated in a state that the second support member is inserted in the first support member, whereby the worm gear is prevented from being shaken through the first support member and the second support member and heat transmission to a housing due to rotation of the worm gear to damage the housing is prevented. | 2018-06-07 |
20180158638 | Circuit Breaker - The present disclosure relates to a circuit breaker. The circuit breaker includes a case having an accommodation space inside, an upper busbar and a lower busbar partially accommodated in an upper portion and a lower portion of the case, respectively, a fixed contact provided in the case and connected to the upper busbar, a movable contact hinge-coupled to the lower busbar and fixed to the case via the first elastic member capable of pivoting in one direction, wherein the movable contact performs a trip operation by being released from the fixed contact, a power transfer part connected to one side of the movable contact to cross each other, and transferring a rotation force to the movable contact, and a trip part arranged under a rear end of the power transfer part and pressing the power transfer part upward when current over a certain amount is applied to the inside. | 2018-06-07 |
20180158639 | TARGET FOR BARIUM-SCANDATE DISPENSER CATHODE - The invention relates to the field of production of barium-scandate dispenser cathodes or other barium-scandate materials. A target ( | 2018-06-07 |
20180158640 | FIELD EMISSION APPARATUS - Disclosed is a field emission apparatus. The apparatus comprises a cathode electrode and an anode electrode spaced apart from each other, an emitter on the cathode electrode, a gate electrode between the cathode and anode electrodes and including at least one gate aperture overlapping the emitter, and an electron transmissive sheet on the gate electrode and including a plurality of fine openings overlapping the gate aperture. | 2018-06-07 |
20180158641 | RADIATION GENERATING TUBE, RADIATION GENERATING APPARATUS, RADIOGRAPHY SYSTEM AND MANUFACTURING METHOD THEREOF - The present invention relates to a radiation generating tube. The radiation generating tube includes an envelope including an insulating tubular member having at least two openings, a cathode connected to one of the openings of the insulating tubular member, and an anode connected to the other of the openings of the insulating tubular member. At least one of the cathode and the anode and the insulating tubular member are bonded at a bonded portion with an electrically conductive bonding member; and the bonded portion bonded with the electrically conductive bonding member is coated with a dielectric layer. | 2018-06-07 |
20180158642 | METHOD FOR INSPECTING A SPECIMEN AND CHARGED PARTICLE MULTI-BEAM DEVICE - A method of inspecting a specimen with an array of primary charged particle beamlets in a charged particle beam device is described. The method includes generating a primary charged particle beam with a charged particle beam emitter; illuminating a multi-aperture lens plate with the primary charged particle beam to generate the array of primary charged particle beamlets; correcting a field curvature with at least two electrodes, wherein the at least two electrodes include aperture openings; directing the primary charged particle beamlets with a lens towards an objective lens; guiding the primary charged particle beamlets through a deflector array arranged within the lens; wherein the combined action of the lens and the deflector array directs the primary charged particle beamlets through a coma free point of the objective lens; and focusing the primary charged particle beamlets on separate locations on the specimen with the objective lens. | 2018-06-07 |
20180158643 | ION BEAM APPARATUS INCLUDING SLIT STRUCTURE FOR EXTRACTING ION BEAM, ETCHING METHOD USING THE SAME, AND METHOD FOR MANUFACTURING MAGNETIC MEMORY DEVICE USING THE ION BEAM APPARATUS - An ion beam apparatus includes a source part generating plasma therein, a process part in which a process using an ion beam is performed, and a slit structure provided between the source part and the process part and extracting the ion beam from the plasma. The slit structure includes at least one electrode structure. The electrode structure has a slit penetrating the electrode structure and extending in a first direction. The ion beam is irradiated onto a substrate at an incident angle through the slit. The incident angle of the ion beam is adjusted by rotating the electrode structure on a rotation axis parallel to the first direction. | 2018-06-07 |
20180158644 | Method and System for Aberration Correction in an Electron Beam System - An electron-optical system for performing electron microscopy is disclosed. The system includes an electron beam source configured to generate a primary electron beam. The system includes a source lens, a condenser lens and an objective lens disposed along an optical axis. The system includes a first Wien filter disposed along the optical axis and a second Wien filter disposed along the optical axis. The first Wien filter and the second Wien filter are disposed between the source lens and the objective lens. The first Wien filter is configured to correct chromatic aberration in the primary beam. The system also includes a detector assembly configured to detect electrons emanating from the surface of the sample. | 2018-06-07 |
20180158645 | SAMPLE CHAMBER DEVICE FOR ELECTRON MICROSCOPE, AND ELECTRON MICROSCOPE COMPRISING SAME - A vacuum sample chamber for a particle and optical device includes on one surface thereof, an aperture through which a particle beam to be focused along an optical axis of particles such as electrons, ions and neutral particles is incident; and on the opposite surface thereof, a detachable sample holder through which light penetrates, thereby enabling a sample to be observed and analyzed by means of the particle beam and light. A sample chamber is capable of reducing observation time by maintaining a vacuum therein even when a sample is put into or taken out from a sample chamber of an electron microscope or focused ion beam observation equipment, and capable of obtaining an optical image on the outside thereof without inserting a light source or an optical barrel into the sample chamber. A light-electron fusion microscope comprising the sample chamber. | 2018-06-07 |
20180158646 | Method of Image Acquisition and Electron Microscope - There is provided a method of image acquisition capable of reducing the effects of diffraction contrast. This method of image acquisition is implemented in an electron microscope for generating electron microscope images with electrons transmitted through a sample. The method starts with obtaining the plural electron microscope images while causing relative variations in the direction of incidence of an electron beam with respect to the sample. An image is generated by accumulating the plural electron microscope images. | 2018-06-07 |
20180158647 | WAFER AND DUT INSPECTION APPARATUS AND METHOD USING THEREOF - A wafer and DUT inspection apparatus and a wafer and DUT inspection method using thereof are provided. The apparatus includes a vacuum chamber, a stage, an electron gun, a lens system, an optical mirror and a detector. In the vacuum chamber, the stage is disposed near a first end, and the electron gun is disposed near a second end opposite to the first end. The lens system disposed between the stage and the electron gun is a total reflective achromatic lens system including a first lens and a second lens. The second lens having a second aperture is disposed between the electron gun and the first lens having a first aperture aligned with the second aperture. The optical mirror is disposed between the lens system and the electron gun. The detector is horizontally aligned with the optical mirror and configured to detect cathodoluminescence reflected from the optical mirror. | 2018-06-07 |
20180158648 | CHARGED PARTICLE BEAM DEVICE PROVIDED WITH ION PUMP - In a charged particle apparatus with an ion pump, which is a charged particle beam apparatus with an ion pump including a charged particle beam irradiation detecting unit for irradiating a sample with a charged particle beam in a chamber and detecting a secondary charged particle, an image processing unit for forming a secondary charged particle image from a detection signal of the detected secondary charged particle, an output unit for processing at the image processing unit and outputting an image, an ion pump for maintaining the interior of the processing chamber in a vacuum state, a driving power supply unit of the ion pump, and a high voltage cable for connecting the ion pump and the driving power supply unit, the driving power supply unit of the ion pump is structured to include a high voltage power supply circuit unit for operating the ion pump, a load current detection circuit unit for detecting a load current applied to the ion pump, and a canceller circuit unit for reducing low frequency noise applied to the load current detection circuit unit in order to sufficiently reduce low frequency noise of the power supply of the ion and to measure the degree of vacuum with a high accuracy. | 2018-06-07 |
20180158649 | CROSS SECTIONAL DEPTH COMPOSITION GENERATION UTILIZING SCANNING ELECTRON MICROSCOPY - A method for generating cross-sectional profiles using a scanning electron microscope (SEM) includes scanning a sample with an electron beam to gather an energy-dispersive X-ray spectroscopy (EDS) spectrum for an energy level to determine element composition across an area of interest. A mesh is generated to locate positions where a depth profile will be taken. EDS spectra are gathered for energy levels at mesh locations. A number of layers of the sample are determined by distinguishing differences in chemical composition between depths as beam energies are stepped through. A depth profile is generated for the area of interest by compiling the number of layers and the element composition across the mesh. | 2018-06-07 |
20180158650 | PLASMA PROCESSING APPARATUS AND PLASMA PROCESSING METHOD - A plasma processing apparatus includes a process chamber, and a pedestal provided in the process chamber and configured to hold a substrate. The plasma processing apparatus includes a first gas supply part configured to be able to supply a first gas from a location facing the pedestal, and a radio frequency power source configured to convert the first gas to plasma. A shield part to block the first gas converted to plasma is provided around the pedestal. The plasma processing apparatus further includes an evacuation part configured to evacuate the process chamber through the shield part, and a second gas supply part configured to be able to supply a second gas to a space between the shield part and the evacuation part. | 2018-06-07 |
20180158651 | Device for Treating an Object with Plasma - A system for treating an object with plasma includes a vacuum processing chamber having a holder on which the object to be treated is placed, at least two subassemblies each including at least one plasma source able to generate a plasma and being supplied with radio-frequency power Pi and with a gas i of independent flow rate ni. The plasma generated by one of the subassemblies is a partially ionized gas or gas mixture of different chemical nature from the plasma generated by the other subassembly or subassemblies. A process for selectively treating a composite object employing such a device is described. | 2018-06-07 |
20180158652 | METHODS AND SYSTEMS FOR CHAMBER MATCHING AND MONITORING - A method and a system for monitoring a plasma chamber are provided. The method includes receiving process chamber characteristics from the plasma chamber; determining whether one or more variables associated with the process chamber characteristics are within predetermined specification. The method further includes updating a status of the plasma chamber to failure when the chamber characteristics are not within the predetermined specification. The method generates a warning notification when the chamber characteristics are within predetermined specification and when an operation status of the plasma chamber received from a fault detection system indicates a failure. | 2018-06-07 |
20180158653 | COMPOSITE PLASMA MODULATOR FOR PLASMA CHAMBER - A plasma-processing apparatus includes a chamber, a plasma generator, and a composite plasma modulator. The chamber includes a plasma zone. The plasma generator is configured to generate a plasma in the plasma zone. The composite plasma modulator is configured to modulate the plasma. The composite plasma modulator includes a dielectric plate made of a first dielectric material and a first modulating portion made of a second dielectric material and coupled to the dielectric plate. | 2018-06-07 |
20180158654 | ETCHING METHOD AND PLASMA PROCESSING APPARATUS - An etching method is provided for processing a substrate that includes a first region having an insulating film arranged on a silicon layer and a second region having the insulating film arranged on a metal layer. The etching method includes a first step of etching the insulating film into a predetermined pattern using a plasma generated from a first gas until the silicon layer and the metal layer are exposed, and a second step of further etching the silicon layer after the first step using a plasma generated from a second gas including a bromide-containing gas. | 2018-06-07 |
20180158655 | PLASMA SOURCE FOR A PLASMA CVD APPARATUS AND A MANUFACTURING METHOD OF AN ARTICLE USING THE PLASMA SOURCE - A plasma source for a plasma CVD apparatus that includes an electrode group including four electrodes, which are a first electrode, a second electrode, a third electrode and a fourth electrode arranged in a row. The electrode group is connected to at least one AC power supply. A voltage supplied to two of the four electrodes is shifted in phase from a voltage supplied to the remaining two electrodes. A space to which a source gas is supplied is provided between the adjacent electrodes, and voltages applied to at least one set among the adjacent two electrodes are in the same phase. | 2018-06-07 |
20180158656 | METHOD OF OPERATING SEMICONDUCTOR MANUFACTURING APPARATUS AND SEMICONDUCTOR DEVICES - Some embodiments of the present disclosure provide a semiconductor manufacturing apparatus. The semiconductor manufacturing apparatus includes a chamber, a support and a liner. The chamber is configured for plasma processes and includes a chamber wall. The support is configured to hold a wafer in the chamber. The liner is configured to surround the support and includes a top side and a bottom side. The top side is detachably hung on the chamber wall. The bottom side includes gas passages for plasma particles to pass through the liner. | 2018-06-07 |
20180158657 | METHODS AND SYSTEMS FOR CHAMBER MATCHING AND MONITORING - A method and a system for plasma etching are provided. The method includes measuring a first set of plasma etch processing parameters; determining an etch rate; altering the plasma etch processing chamber hardware configuration if the determined etch rate differs from a standard etch rate by more than a predetermined etch rate difference threshold, thereafter repeating the determining and altering until the determined etch rate differs from the standard etch rate by less than the predetermined etch rate difference threshold. The method further includes measuring a critical dimension of an etched feature and altering the etch processing parameters if the measured critical dimension differs from a standard critical dimension by more than a predetermined critical dimension difference threshold, thereafter repeating the determining and altering until the measured critical dimension differs from the standard critical dimension by less than the predetermined critical dimension difference threshold. | 2018-06-07 |
20180158658 | Systems and Methods for Integrated Resputtering in a Physical Vapor Deposition Chamber - Physical vapor deposition systems are disclosed herein. An exemplary physical vapor deposition system includes a target, a collimator, a power source system, and a control system. The power source system is configured to supply power to the collimator and the target. The control system is configured to control the power source system, such that the collimator is bombarded with noble gas ions during a sputtering process and the target is bombarded with metal ions during a re-sputtering process, wherein the collimator functions as a sputtering target during the sputtering process and as the collimator during the re-sputtering process. | 2018-06-07 |
20180158659 | PREPARATION AND FEED APPARATUS OF STANDARD SAMPLE FOR CALIBRATION OF TRACE-ANALYSIS INSTRUMENT - Embodiments of the present disclosure relate to a preparation and feed apparatus of a standard sample for calibration of a trace-analysis instrument, and especially to a preparation and feed apparatus of a standard sample for calibration of a gas chromatograph-ion mobility spectrometer. When the trace-analysis instrument is being calibrated by taking advantage of the preparation and feed apparatus according to embodiments of the disclosure, it is unnecessary to use an additional dedicated tool and steps to prepare the sample for testing and to use an organic solvent or a dedicated sample application/dispensing tool, resulting in that the trace-analysis instrument is simple and convenient to carry and use, and the substance for calibration is also convenient to store and exchange; moreover, the trace-analysis instrument is also safe, reliable and environmentally friendly. | 2018-06-07 |
20180158660 | SURFACE-ASSISTED LASER DESORPTION/IONIZATION METHOD, MASS SPECTROMETRY METHOD AND MASS SPECTROMETRY DEVICE - A surface-assisted laser desorption/ionization method according to an aspect includes: a first process of preparing a sample support having a substrate in which a plurality of through-holes passing from one surface thereof to the other surface thereof are provided and a conductive layer that covers at least the one surface; a second process of placing a sample on a sample stage and arranging the sample support on the sample such that the other surface faces the sample; and a third process of applying a laser beam to the one surface and ionizing the sample moved from the other surface side to the one surface side via the through-holes due to a capillary phenomenon. | 2018-06-07 |
20180158661 | COLLECTION PROBE AND METHODS FOR THE USE THEREOF - Method and devices are provided for assessing tissue samples from a plurality of tissue sites in a subject using molecular analysis. In certain aspects, devices of the embodiments allow for the collection of liquid tissue samples and delivery of the samples for mass spectrometry analysis. | 2018-06-07 |
20180158662 | PRESSURE DRIVEN FLUIDIC INJECTION FOR CHEMICAL SEPARATIONS BY ELECTROPHORESIS - A pneumatic method, and associated apparatus, for injecting a discrete sample plug into the separation channel of an electrophoresis microchip ( | 2018-06-07 |
20180158663 | Sheathless Interface for Capillary Electrophoresis/Electrospray Ionization-Mass Spectrometry - Provided herein are capillaries for use in an electrophoretic separations. The capillaries can comprise an elongated tubular wall defining a path for fluid flow from an inlet to a tapered outlet; and a decoupler junction positioned within the elongated tubular wall upstream of the tapered outlet. The decoupler junction can comprise a plurality of microchannels penetrating through the elongated tubular wall and an ion-permeable polymer coating the plurality of microchannels. Also provided are sheathless interfaces for coupling capillary electrophoresis (CE) with mass spectrometry that employ these capillaries. | 2018-06-07 |
20180158664 | Mobility Electrophoresis Separation Device, Operating Method Thereof, and Interface Between Liquid Chromatography and Mass Spectrometry - The present invention provides a mobility electrophoresis separation device, its operating method, and an interface between liquid chromatography and mass spectrometry. The mobility electrophoresis separation device comprises a separation capillary, a syringe pump for injecting a buffer solution, a syringe for injecting a sample solution, and two electrodes disposed apart from each other on either side of the separation capillary. A sample solution is injected by a syringe at a position of the capillary channel, and a buffer solution is injected into the capillary channel upstream the first position, and carries the sample solution to flow downstream. While the mixed liquid flows through the capillary, an electric field is applied in the direction of the flow. Different ions in the sample are thus separated in the flow due to their different velocities traveling in the flow. | 2018-06-07 |
20180158665 | APPARATUS FOR DETECTING CONSTITUENTS IN A SAMPLE AND METHOD OF USING THE SAME - An apparatus for detecting constituents in a sample includes first and second drift tubes defining first and second drift regions, and a controllable electric field device within a fragmentation region coupled to the first and second drift tubes. The apparatus also includes a first ion shutter positioned between the first drift and fragmentation regions. The apparatus further includes a control system configured to regulate the first ion shutter, thereby facilitating injection of a selected portion of ions from the first drift region into the fragmentation region. The control system is also configured to regulate the controllable device to modify the selected portion of ions to generate predetermined ion fragments within the fragmentation region, thereby facilitating injection of a selected portion of the predetermined fragmented ions into the second drift region. A method of detecting constituents in a sample is facilitated through such an apparatus. | 2018-06-07 |
20180158666 | Double-Ended Ceramic Metal Halide Lamp - A double-ended ceramic metal halide lamp includes a luminous tube; at least two illuminators serially connected with each other deposed inside the luminous tube; and at least one ring-shaped retainers arranged between two illuminators to support the illuminators located along a central line of the luminous tube. A manufacturing method for a ceramic metal halide lamp includes following steps: (1) Arrange at least two serially connected illuminators inside an interior of a luminous tube; (2) Seal two ends of the luminous tube by a press sealing technique; and (3) Extract out the gas inside the luminous tube to form an eyelet at a central portion of the luminous tube. | 2018-06-07 |
20180158667 | Double-Ended High Intensity Discharge Lamp and Manufacturing Method Thereof - A double-ended high intensity discharge lamp includes a luminous tube and reflective layer covering at a reflective portion provided on at least a portion of aid luminous tube for reflecting light emitted from an illuminator supported in the luminous tube towards the reflective portion to project towards another opposing side of the luminous tube. | 2018-06-07 |
20180158668 | Double-Ended High Intensity Discharge Lamp and Manufacturing Method Thereof - A double-ended high intensity discharge lamp includes a luminous tube which comprises an inner tube and an outer tube. At least one electrical member is securely fastened inside the luminous tube and at least one illuminator supported inside the luminous tube with a distributor connected with the electrical member to receive power and supply the illuminator. The outer tube is another protective shield to stop spreading in explosion of the illuminator. | 2018-06-07 |
20180158669 | SEMICONDUCTOR DEVICE - Methods for manufacturing a semiconductor device include forming a gate line extending in a first direction in a substrate, and an impurity region on a side surface of the gate line, forming an insulating film pattern on the substrate, the insulating film pattern extending in the first direction and comprising a first through-hole that is configured to expose the impurity region, forming a barrier metal layer on the first through-hole, forming a conductive line contact that fills the first through-hole and that is electrically connected to the impurity region, fowling a first mask pattern on the conductive line contact and the insulating film pattern, the first mask pattern extending in a second direction that is different from the first direction and the first mask pattern comprising a first opening, and removing corners of the barrier metal layer by partially etching the barrier metal layer. | 2018-06-07 |
20180158670 | HIGH-K GATE DIELECTRICS ON 2D SUBSTRATES, INERT SURFACES, AND 3D MATERIALS - A method for forming a high-k oxide includes forming a nanofog of Al | 2018-06-07 |
20180158671 | FILM FORMING APPARATUS AND FILM FORMING METHOD - A film forming apparatus includes a gas injection unit having a shower plate provided with gas injection holes, and a plurality of partition regions through which gases are separately injected and which are defined by dividing an arrangement region of the gas injection holes into a plurality of concentric regions in a diametrical direction of the substrate. A supply amount of a raw material gas per unit time in a raw material gas supply period in a cycle of forming a monomolecular layer by supplying the raw material gas and a reactant gas multiple times, and per unit area of the shower plate, and/or a supply amount of the reactant gas per unit time in a reaction period of the raw material gas and the reactant gas in the cycle, and per unit area of the shower plate becomes different in at least two of the partition regions. | 2018-06-07 |
20180158672 | Crystalline Semiconductor Growth on Amorphous and Poly-Crystalline Substrates - A multilayer semiconductor structure including at least in part a substrate and an III-N film layer. The substrate's constant of thermal expansion being substantially matched to the III-N film's constant of thermal expansion. The multilayer semiconductor structure may also include a crystal matching layer that has a lattice constant that substantially matches the lattice of constant of the III-N film. By not relying on the substrate for lattice matching the III-N film, the multilayer structure allows greater flexibility in the selection of an applicable substrate. | 2018-06-07 |
20180158673 | GALLIUM ARSENIDE SUBSTRATE AND USE THEREOF - The present invention relates to a novel provided gallium arsenide substrates as well as the use thereof. The gallium arsenide substrates provided according to the invention exhibit a so far not obtained surface quality, in particular a homogeneity of surface properties, which is detectable by means of optical surface analyzers, by way of example by means of ellipsometric lateral substrate mapping for optical contact-free quantitative characterization. | 2018-06-07 |
20180158674 | AROMATIC RESINS FOR UNDERLAYERS - Aromatic resin polymers and compositions containing them are useful as underlayers in semiconductor manufacturing processes. | 2018-06-07 |
20180158675 | CLEANING METHOD - A method of cleaning an object that includes a plurality of chips divided individually, starting from modified layers, and integral with a holding member, includes the steps of placing the object in a cleaning tank filled with a cleaning liquid which contains a surface active agent, and cleaning away modified layer debris on side faces of the chips with ultrasonic waves generated by ultrasonic oscillating means. | 2018-06-07 |
20180158676 | SUPERCRITICAL FLUID PRODUCING APPARATUS AND SUBSTRATE PROCESSING APPARATUS - A supercritical fluid producing apparatus according to the present disclosure includes a gas supply line, a cooler, a pump, a buffer tank, a heating device, and a supercritical fluid supply line. An inlet port into which a processing fluid from the pump flows is formed at a predetermined position on the buffer tank, and an outlet port through which the processing fluid flows out is formed at a different position from the inlet port. The buffer tank includes a buffer tank body that stores the processing fluid from the pump, and a heater that heats the processing fluid sent into the buffer tank body. | 2018-06-07 |
20180158677 | GROWING GRAPHENE ON SUBSTRATES - Embodiments described herein provide methods and apparatus for forming graphitic carbon such as graphene on a substrate. The method includes providing a precursor comprising a linear conjugated hydrocarbon, depositing a hydrocarbon layer from the precursor on the substrate, and forming graphene from the hydrocarbon layer by applying energy to the substrate. The precursor may include template molecules such as polynuclear aromatics, and may be deposited on the substrate by spinning on, by spraying, by flowing, by dipping, or by condensing. The energy may be applied as radiant energy, thermal energy, or plasma energy. | 2018-06-07 |
20180158678 | NITRIDE SEMICONDUCTOR ELEMENT AND NITRIDE SEMICONDUCTOR PACKAGE - A nitride semiconductor element capable of accommodating GaN electron transfer layers of a wide range of thickness, so as to allow greater freedom of device design, and a nitride semiconductor element package with excellent voltage tolerance performance and reliability. On a substrate, a buffer layer including an AlN layer, a first AlGaN layer and a second AlGaN layer is formed. On the buffer layer, an element action layer including a GaN electron transfer layer and an AlGaN electron supply layer is formed. Thus, an HEMT element is constituted. | 2018-06-07 |
20180158679 | High-Temperature Non-Stoichiometric Oxide Actuators - A piezoelectric actuator expands or deflects in response to an applied voltage. Unfortunately, the voltage required to actuate a piezoelectric device is usually on the order of MV/cm. And most piezoelectric devices don't work well, if at all, at temperatures above 450° C. Fortunately, an oxide film actuator can work at temperatures above 450° C. and exhibits displacements of nanometers to microns at actuation voltages on the order of mV. Applying a voltage across an oxide film disposed on an ionically conducting substrate pumps oxygen ions into the oxide film, which in turn causes the oxide film to expand. This expansion can be controlled by varying the voltage based on the open-circuit potential across the oxide film and the substrate. Thanks to their low actuation voltages and ability to work at high temperatures, oxide-based actuators are suitable for applications from robotics to nuclear reactors. | 2018-06-07 |
20180158680 | METHOD FOR MANUFACTURING NITRIDE SEMICONDUCTOR TEMPLATE, NITRIDE SEMICONDUCTOR TEMPLATE AND NITRIDE SEMICONDUCTOR DEVICE - There is provided a method for manufacturing a nitride semiconductor template constituted by forming a nitride semiconductor layer on a substrate, comprising: (a) forming a first layer by epitaxially growing a nitride semiconductor containing aluminum on the substrate; (b) applying annealing to the first layer in an inert gas atmosphere; and (c) forming a second layer by epitaxially growing a nitride semiconductor containing aluminum on the first layer by a vapor phase growth after performing (b), and constituting the nitride semiconductor layer by the first layer and the second layer. | 2018-06-07 |
20180158681 | METHOD FOR MANUFACTURING NITRIDE SEMICONDUCTOR TEMPLATE, NITRIDE SEMICONDUCTOR TEMPLATE AND NITRIDE SEMICONDUCTOR DEVICE - There is provided a method for manufacturing a nitride semiconductor template constituted by forming a nitride semiconductor layer on a substrate, comprising: (a) preparing a pattern-substrate as the substrate, with a concavo-convex pattern formed on a front surface of the pattern-substrate, (b) forming a first layer by epitaxially growing a nitride semiconductor containing aluminum on the concavo-convex pattern of the pattern-substrate, in a thickness of not flattening a front surface; (c) applying annealing to the first layer; and (d) forming a second layer by epitaxially growing a nitride semiconductor containing aluminum so as to overlap on the first layer after performing (c), and in a thickness of flattening a front surface, and constituting the nitride semiconductor layer by the first layer and the second layer. | 2018-06-07 |
20180158682 | METHOD TO ENHANCE GROWTH RATE FOR SELECTIVE EPITAXIAL GROWTH - Embodiments of the present disclosure generally relate to methods for forming a doped silicon epitaxial layer on semiconductor devices at increased pressure and reduced temperature. In one embodiment, the method includes heating a substrate disposed within a processing chamber to a temperature of about 550 degrees Celsius to about 800 degrees Celsius, introducing into the processing chamber a silicon source comprising trichlorosilane (TCS), a phosphorus source, and a gas comprising a halogen, and depositing a silicon containing epitaxial layer comprising phosphorus on the substrate, the silicon containing epitaxial layer having a phosphorus concentration of about 1×10 | 2018-06-07 |
20180158683 | SOFT LANDING NANOLAMINATES FOR ADVANCED PATTERNING - Methods for depositing nanolaminate protective layers over a core layer to enable deposition of high quality conformal films over the core layer for use in advanced multiple patterning schemes are provided. In certain embodiments, the methods involve depositing a thin silicon oxide or titanium oxide film using plasma-based atomic layer deposition techniques with a low high frequency radio frequency (HFRF) plasma power, followed by depositing a conformal titanium oxide film or spacer with a high HFRF plasma power. | 2018-06-07 |
20180158684 | METHOD OF PROCESSING TARGET OBJECT - A controllability of a size of a mask can be improved in a multi-patterning method. A process of forming a silicon oxide film on a first mask and an antireflection film is performed. In this process, plasma of a first gas including a silicon halide gas and plasma of a second gas including an oxygen gas are alternately generated. Then, a region of the silicon oxide film is removed such that only a region along a side wall of the first mask is left, and then, the first mask is removed and the antireflection film and an organic film is etched. | 2018-06-07 |
20180158685 | PARASITIC CHANNEL MITIGATION VIA BACK SIDE IMPLANTATION - III-nitride materials are generally described herein, including material structures comprising III-nitride material regions and silicon-containing substrates. Certain embodiments are related to gallium nitride materials and material structures comprising gallium nitride material regions and silicon-containing substrates. | 2018-06-07 |
20180158686 | Deposition Of Metal Films - Methods to selectively deposit titanium-containing films on silicon-containing surfaces in high aspect ratio features of substrates comprise plasma-enhanced chemical vapor deposition (PECVD) process at a plasma powers in the range of about 1 to less than about 700 mWatts/cm | 2018-06-07 |
20180158687 | HALOALKYNYL DICOBALT HEXACARBONYL PRECURSORS FOR CHEMICAL VAPOR DEPOSITION OF COBALT - The present disclosure relates to a bridging asymmetric haloalkynyl dicobalt hexacarbonyl precursors, and ultra high purity versions thereof, methods of making, and methods of using these bridging asymmetric haloalkynyl dicobalt hexacarbonyl precursors in a vapor deposition process. One aspect of the disclosure relates to an ultrahigh purity bridging asymmetric haloalkynyl dicobalt hexacarbonyl precursor of the formula Co | 2018-06-07 |
20180158688 | METHODS FOR FORMING A TRANSITION METAL NIOBIUM NITRIDE FILM ON A SUBSTRATE BY ATOMIC LAYER DEPOSITION AND RELATED SEMICONDUCTOR DEVICE STRUCTURES - Methods for forming a transition metal niobium nitride film on a substrate by atomic layer deposition and related semiconductor device structures are provided. In some embodiments methods may include contacting a substrate with a first reactant comprising a transition metal precursor, contacting the substrate with a second reactant comprising a niobium precursor and contacting the substrate with a third reactant comprising a nitrogen precursor. In some embodiments related semiconductor device structures may include a semiconductor body and an electrode comprising a transition metal niobium nitride disposed over the semiconductor body. | 2018-06-07 |
20180158689 | METHOD OF SMOOTHING A SURFACE - According to the invention there is provided a method of smoothing a surface of a silicon substrate comprising the steps of: providing a silicon substrate having a backside surface, wherein the silicon substrate has been ground to leave the backside surface with an associated roughness; and smoothing the backside surface of the silicon substrate using a plasma etch process; in which the plasma etch process comprises the steps of performing a first plasma etch step which forms a plurality of protrusions that upstand from the backside surface; and performing a second plasma etch step which at least partially etches the protrusions to provide a smoothed backside surface which exhibits specular reflection. | 2018-06-07 |
20180158690 | PHOTOLITHOGRAPHY MASK PLATE - A photolithography mask plate, the photolithography mask plate including: a substrate; a carbon nanotube composite structure on a surface of the substrate, wherein the carbon nanotube composite structure comprises a carbon nanotube layer and a chrome layer coated on the carbon nanotube layer; a cover layer on the carbon nanotube composite structure. | 2018-06-07 |
20180158691 | MASK-INTEGRATED SURFACE PROTECTIVE FILM - A mask-integrated surface protective film, containing:
| 2018-06-07 |
20180158692 | APPARATUS FOR ACHIEVING ULTRA-HIGH SELECTIVITY WHILE ETCHING SILICON NITRIDE - Apparatuses for processing substrates are provided herein. Apparatuses include a plasma etch chamber having a showerhead and pedestal for holding a substrate having silicon nitride, at least one outlet for coupling to a vacuum, a solid non-functional silicon source, and a plasma generator. A solid silicon source may be upstream of a substrate, such as at or near a showerhead of a process chamber, or in a remote plasma generator. Apparatuses also include a plasma etch chamber, at least one outlet, a solid non-functional silicon source, a plasma generator, and a controller for controlling operations including instructions for causing introduction of a fluorinating gas and causing ignition of a plasma to form fluorine-containing etching species in the plasma etch chamber. | 2018-06-07 |
20180158693 | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE - There is provided a method of manufacturing a semiconductor device, which includes: supplying a raw material for polymerization to a porous low dielectric constant film formed on a substrate for manufacturing a semiconductor device, and filling holes formed in the porous low dielectric constant film with a polymer having a urea bond; subsequently, forming a pattern mask for etching on a surface of the porous low dielectric constant film; subsequently, etching the porous low dielectric constant film; subsequently, removing the pattern mask; and heating the substrate to depolymerize the polymer. | 2018-06-07 |
20180158694 | TEXTILE PATTERNING FOR SUBTRACTIVELY-PATTERNED SELF-ALIGNED INTERCONNECTS, PLUGS, AND VIAS - Embodiments of the invention include methods of forming a textile patterned hardmask. In an embodiment, a first hardmask and a second hardmask are formed over a top surface of an interconnect layer in an alternating pattern. A sacrificial cross-grating may then be formed over the first and second hardmasks. In an embodiment, portions of the first hardmask that are not covered by the sacrificial cross-grating are removed to form first openings and a third hardmask is disposed into the first openings. Embodiments may then include etching through portions of the second hardmask that are not covered by the sacrificial cross-grating to form second openings. The second openings may be filled with a fourth hardmask. According to an embodiment, the first, second, third, and fourth hardmasks are etch selective to each other. In an embodiment the sacrificial cross-grating may then be removed. | 2018-06-07 |
20180158695 | MANUFACTURING METHOD AND WIRING SUBSTRATE WITH THROUGH ELECTRODE - There is provided a method for manufacturing a wiring substrate with a through electrode, the method including providing a device substrate having a through hole, an opening of the through hole being blocked by a current supply path and the wiring substrate including the device substrate as a core layer with the through electrode; and disposing a first metal in the through hole to form the through electrode by electroplating, in a depth direction of the through hole, using the current supply path. | 2018-06-07 |
20180158696 | SEMICONDUCTOR DEVICE WITH RECESS AND METHOD OF MAKING - A semiconductor device is provided with a substrate made of a semiconductor material, an interconnect layer, at least one electronic element, and a sealing resin. The substrate has a main surface and a pair of lateral surfaces that are orthogonal to the main surface and face in opposite directions to each other. A recessed portion that is recessed from the main surface and has an opening portion that opens on at least one of the pair of lateral surfaces is formed in the substrate. The interconnect layer is formed on the substrate. The electronic element is an orientation sensor, for example, and is accommodated in the recessed portion of the substrate. The sealing resin covers the electronic element. | 2018-06-07 |
20180158697 | ELECTRONIC-DEVICE-PROTECTING FILM, ELECTRONIC-DEVICE-PROTECTING MEMBER, METHOD FOR MANUFACTURING ELECTRONIC DEVICE, AND METHOD FOR MANUFACTURING PACKAGE - Provided are an electronic-device-protecting film used when semiconductor parts obtained by segmentation are to be sealed in the form of an array using a sealant after the semiconductor parts are rearranged, wherein the curing temperature of the sealant does not need to be adjusted downward; an electronic-device-protecting member; a method for manufacturing an electronic device; and a method for manufacturing a package. The electronic-device-protecting film includes a base layer and an adhesive layer, and the method includes: bonding the adhesive layer to one surface of a frame having an opening, the adhesive layer being bonded so as to cover the opening; subsequently bonding a plurality of semiconductor parts to the surface of the adhesive layer that is exposed via the opening with the semiconductor parts set apart from each other; subsequently covering the semiconductor parts and the surface of the adhesive layer with a sealant; and heat-curing the sealant. | 2018-06-07 |
20180158698 | SUBSTRATE PROCESSING METHOD AND SUBSTRATE PROCESSING APPARATUS - A substrate processing method is a substrate processing method which applies sequentially common etching processing which is common to each of a plurality of substrates. The common etching processing has an etching step and a high-temperature liquid discharge step. The substrate processing method further includes a piping heating step in which, of the plurality of common etching processings applied to the plurality of substrates, before the initial common etching processing, the pipe wall of the common piping is raised in temperature up to a predetermined second liquid temperature higher than a first liquid temperature and in each of the common etching processings, after each of high-temperature liquid discharge steps and before each of next etching steps, there is not performed a step in which the pipe wall of the common piping is lowered in temperature. | 2018-06-07 |
20180158699 | METHOD OF CLEANING SUBSTRATE PROCESSING APPARATUS AND SYSTEM OF CLEANING SUBSTRATE PROCESSING APPARATUS - Disclosed is a method of cleaning a substrate processing apparatus in which a substrate having a surface wet by a liquid is brought into contact with a supercritical fluid so as to perform a drying process of drying the substrate. The method includes a cleaning gas filling process and an exhausting process. The cleaning gas filling process fills a cleaning gas containing isopropyl alcohol in the substrate processing apparatus. The exhausting process exhausts the cleaning gas from an inside of the substrate processing apparatus after the cleaning gas filling process. | 2018-06-07 |
20180158700 | SUBSTRATE PROCESSING SYSTEM AND SUBSTRATE PROCESSING METHOD - Provided are a substrate processing system and a substrate processing method that can obtain expected etching rate and selection ratio, and perform stable processing. A substrate ( | 2018-06-07 |
20180158701 | SUBSTRATE LIQUID PROCESSING APPARATUS AND SUBSTRATE LIQUID PROCESSING METHOD - A substrate liquid processing apparatus includes a placing unit which places thereon a substrate; a liquid processing unit which processes the substrate by immersing the substrate in a processing liquid with a posture in which a plate surface of the substrate is perpendicular to a horizontal direction; a transfer unit which transfers the substrate between the placing unit and the liquid processing unit; and a rotating unit which rotates the substrate, after being subjected to a first processing by the liquid processing unit, around an axis perpendicular to the plate surface, and in a direction different from that when the first processing is performed. Further, the transfer unit transfers the substrate, after being subjected to the first processing, to the rotating unit and transfers the rotated substrate to the liquid processing unit. The liquid processing unit performs a second processing by immersing the rotated substrate in the processing liquid. | 2018-06-07 |
20180158702 | RAPID THERMAL PROCESSING METHOD AND APPARATUS FOR PROGRAMMING THE PINNED LAYER OF SPINTRONIC DEVICES - A rapid thermal processing method and apparatus used for programming the pinned layer of spintronic devices, the apparatus comprising a rapid thermal annealing light source, a reflective cover, a magnet, a wafer, and a substrate. The light source is used for heating the substrate. The reflective cover at least comprises a transparent insulating layer and a reflective layer. The magnet is used to produce a constant magnetic field. An antiferromagnetic layer on a wafer may be locally programmed by controlling the exposure time, for heating a specific area on the wafer to a temperature above the blocking temperature of the antiferromagnetic layer, and then turning off the magnetic field after the heating area has cooled in the presence of the applied magnetic field. This rapid thermal processing method is used to improve the spatial resolution of laser annealing. It provides excellent performance, and it is suitable for mass production. | 2018-06-07 |
20180158703 | LASER PROCESSING APPARATUS AND METHOD FOR MANUFACTURING THE SAME - A laser processing apparatus includes a laser beam generating unit which emits a laser beam, a lens unit which divides the laser beam into a plurality of laser beams, and a light condensing unit which condenses the plurality of laser beams. The lens unit includes a first lens array having a first central axis and a second lens array having a second central axis, and wherein at least one of the first lens array and the second lens array reciprocates such that the first central axis and the second central axis are deviated from each other. | 2018-06-07 |
20180158704 | PICKING UP AND PLACING OF MICRO LIGHT EMITTING DIODES USING POLYGON TOOL - Embodiments relate to placing of semiconductor devices on a target substrate using a pick and place head (PPH) having a cross-section of a polygon shape and pick-up surfaces. The pick-up surfaces of the PPH are aligned with a carrier substrate mounted with the semiconductor devices, which may be light emitting diodes (LEDs). The PPH is moved toward one or more first semiconductor devices on the carrier substrate to pick up the one or more first semiconductor devices with a first pick-up surface of the PPH. The PPH is rotated to pick up one or more semiconductor devices dies with a second pick-up surface of the PPH. The one or more first semiconductor devices attached to the first pick-up surface and the one or more second semiconductor devices attached to the second pick-up surface are placed on a target substrate. | 2018-06-07 |
20180158705 | OBJECT DETECTION SYSTEM - An object detection system utilizes a teach cycle performed with a low-pressure blow-off (i.e. positive pressure) instead of vacuum (negative pressure). During the teach operation, the positive pressure is enabled and the nozzle is lowered to the object. An air sensor detects pressure or flow at the nozzle tip. A rise in pressure or drop in flow is detected as the nozzle makes contact with the object (i.e. just before or just after actual physical contact is made). The height of the object is stored as the taught height to be used subsequently in repetitive operations by the machine. This teaching method is particularly useful for very small objects because the positive pressure does not lift the object. | 2018-06-07 |
20180158706 | Micro Elements Transfer Device and Method - A transfer device for micro element with a test circuit can test the micro element during transfer. The transfer device for micro elements includes: a base substrate, having two surfaces opposite to each other; a pick-up head array, formed over the first surface of the base substrate for picking up or releasing the micro element; a test circuit set inside or/on the surface of the base substrate, which has a series of sub-test circuits, each sub-test circuit at least having two test electrodes for simultaneous test of photoelectric parameters of the micro element when the transfer device transfers the micro element. | 2018-06-07 |
20180158707 | RFID PART AUTHENTICATION AND TRACKING OF PROCESSING COMPONENTS - Embodiments provided herein provide for methods and apparatus for detecting, authenticating, and tracking processing components including consumable components or non-consumable components used on substrate processing systems for electronic device manufacturing, such as semiconductor chip manufacturing. The semiconductor processing systems and/or its processing components herein include a remote communication device, such as a wireless communication apparatus, for example radio frequency identification (RFID) devices or other devices embedded in, disposed in, disposed on, located on, or otherwise coupled to one or more processing components or processing component assemblies and/or integrated within the semiconductor processing system itself. The processing component may include a single component (part) or an assembly of components (parts) that are used within the semiconductor processing tool. | 2018-06-07 |