23rd week of 2010 patent applcation highlights part 17 |
Patent application number | Title | Published |
20100140572 | ENGAGEMENT CHAIN - There is provided an engagement chain whose driving force per occupied space is increased, whose durability is improved by reducing stress in a direction of bending a connecting pin and whose engagement noise during driving is reduced. The engagement chain includes a large number of outer and inner link plates, each having hook-like portions, which are connected in a chain longitudinal direction by connecting pins, the large number of outer and inner link plates are connected flexibly without gap in the chain width direction while the back surfaces of the link plates opposite to the hook-like portions engage with driving sprockets. | 2010-06-10 |
20100140573 | LIFTING DEVICE - Represented and described is a lifting device having a housing, a lifting spindle that is cylindrical and has an external thread on the outer surface, a threaded bush that surrounds the lifting spindle and has an internal thread that is in engagement with the external thread and a drive unit for the rotating drive of the threaded bush, wherein the lifting spindle is mounted in the housing so as to be displaceable in its axial direction and non-rotatable. The object to provide a lifting device that has as short an installation length as possible in the axial direction of the lifting spindle is achieved in that the lifting spindle is in the form of a hollow cylinder, in that a dome is located in the interior of the lifting spindle and is connected in a non-rotatable manner to the housing and in that the lifting spindle is mounted on the dome so as to be non-rotatable and axially displaceable. | 2010-06-10 |
20100140574 | Adjustable Automotive Suspension Tool - An automotive tool serving as a pinch bar and lever for gripping an automotive suspension workpiece between first and second tool elements and an extended handle for increasing force to free the workpiece from its fastened position. Alternately, the first and second tool elements can be positioned against opposing workpieces to free one from the other again using the extended handle to amplify the applied force causing separation. The tool is designed for the automotive repair industry in the removal and installation of suspension members, such as CV joints, ball joints, struts, etc that require the dismantling of parts that have bonded due to dirt, wear and electrolytic reactions, such as oxidation, resulting in time intensive and hazardous tasks depending on the inventiveness of the mechanic in performing the separation task. | 2010-06-10 |
20100140575 | Prying Tool - A prying tool includes a shank having an engaging portion and two prongs moveably mounted on the engaging portion of the shank and the prongs define a space therebetween such that an item to be pried is received in the space. The prongs are operably moveable so that the space is variable in size. Further, two positioning devices are utilized for holding the two prongs stationary with respect to the engaging portion of the shank respectively. | 2010-06-10 |
20100140576 | Warning System For Hydraulic Lifting Apparatus - The disclosed subject matter provides a warning system for overloads in hydraulic jacking and lifting structures, that provides a warning to the user sufficiently prior to an actual overload condition. The overload or potential overload is detected from fluid pressures of the fluid displaced from the pump of the jacking or lifting structures. | 2010-06-10 |
20100140577 | Combined Guardrail and Cable Safety Systems - A combined guardrail and cable safety system is disclosed. In one aspect, the present invention teaches a safety barrier including a plurality of cable posts spaced from each other and disposed adjacent to a roadway. At least two cables are releasably engaged with and supported by the cable posts. The cable posts and the two cables cooperate with each other to prevent a vehicle from leaving the roadway. A plurality of guardrail posts are spaced from each other and disposed adjacent to the roadway longitudinally spaced from the plurality of cable post. A guardrail beam is fixedly coupled to the plurality of guardrail posts and including slots. The two cables extend from the cable posts through respective slots formed in the guardrail beam permitting each cable to engage a respective cable anchor bracket securely fastened to a portion of the guardrail beam. | 2010-06-10 |
20100140578 | NON VOLATILE MEMORY CELLS INCLUDING A COMPOSITE SOLID ELECTROLYTE LAYER - Programmable metallization cells (PMC) that include a first electrode; a solid electrolyte layer including clusters of high ion conductive material dispersed in a low ion conductive material; and a second electrode, wherein either the first electrode or the second electrode is an active electrode, and wherein the solid electrolyte layer is disposed between the first electrode and the second electrode. Methods of forming them are also included herein. | 2010-06-10 |
20100140579 | SILVER-SELENIDE/CHALCOGENIDE GLASS STACK FOR RESISTANCE VARIABLE MEMORY - The invention is related to methods and apparatus for providing a resistance variable memory element with improved data retention and switching characteristics. According to an embodiment of the invention a resistance variable memory element is provided having at least one silver-selenide layer in between glass layers, wherein at least one of the glass layers is a chalcogenide glass, preferably having a Ge | 2010-06-10 |
20100140580 | Phase Change Memory - A phase change memory is provided. The method includes forming contact plugs in a first dielectric layer. A second dielectric layer is formed overlying the first dielectric layer and a trench formed therein exposing portions of the contact plugs. A metal layer is formed over surfaces of the trench. One or more heaters are formed from the metal layer such that each heater is formed along one or more sidewalls of the trench, wherein the portion of the heater along the sidewalls does not include a corner region of adjacent sidewalls. The trench is filled with a third dielectric layer, and a fourth dielectric layer is formed over the third dielectric layer. Trenches are formed in the fourth dielectric layer and filled with a phase change material. An electrode is formed over the phase change material. | 2010-06-10 |
20100140581 | BOTTOM ELECTRODE FOR MEMORY DEVICE AND METHOD OF FORMING THE SAME - Contacts having use in an integrated circuit and exemplary methods of forming the contacts are disclosed. The methods involve forming a conductive cap over a metal plug. The invention can mitigate keyholes in the contacts by capping and encapsulating the conductive material used to form the contact. The exemplary cap may be made of a nitride material. | 2010-06-10 |
20100140582 | CHALCOGENIDE NANOIONIC-BASED RADIO FREQUENCY SWITCH - A nonvolatile nanoionic switch is disclosed. A thin layer of chalcogenide glass engages a substrate and a metal selected from the group of silver and copper photo-dissolved in the chalcogenide glass. A first oxidizable electrode and a second inert electrode engage the chalcogenide glass and are spaced apart from each other forming a gap therebetween. A direct current voltage source is applied with positive polarity applied to the oxidizable electrode and negative polarity applied to the inert electrode which electrodeposits silver or copper across the gap closing the switch. Reversing the polarity of the switch dissolves the electrodeposited metal and returns it to the oxidizable electrode. A capacitor arrangement may be formed with the same structure and process. | 2010-06-10 |
20100140583 | PHASE CHANGE MEMORY DEVICE AND FABRICATING METHOD THEREFOR - A phase change memory device and fabricating method are provided. A disk-shaped phase change layer is buried within the insulating material. A center via and ring via are formed by a lithography. The center via is located in the center of the phase change layer and passes through the phase change layer, and the ring via takes the center via as a center. A heating electrode within the center via performs Joule heating of the phase change layer, and the contact area between the phase change layer and the heating electrode is reduced by controlling the thickness of the phase change layer. Furthermore, a second electrode within the ring via dissipates the heat transmitted to the contact interface between the phase change layers, so as to avoid transmitting the heat to the etching boundary at the periphery of the phase change layer. | 2010-06-10 |
20100140584 | METHOD FOR PRODUCING CATALYST-FREE SINGLE CRYSTAL SILICON NANOWIRES, NANOWIRES PRODUCED BY THE METHOD AND NANODEVICE COMPRISING THE NANOWIRES - Disclosed herein is a method for producing catalyst-free single crystal silicon nanowires. According to the method, nanowires can be produced in a simple and economical manner without the use of any metal catalyst. In addition, impurities contained in a metal catalyst can be prevented from being introduced into the nanowires, contributing to an improvement in the electrical and optical properties of the nanowires. Also disclosed herein are nanowires produced by the method and nanodevice comprising the nanowires. | 2010-06-10 |
20100140585 | QUANTUM DOT WHITE AND COLORED LIGHT-EMITTING DEVICES - A light-emitting device comprising a population of quantum dots (QDs) embedded in a host matrix and a primary light source which causes the QDs to emit secondary light and a method of making such a device. The size distribution of the QDs is chosen to allow light of a particular color to be emitted therefrom. The light emitted from the device may be of either a pure (monochromatic) color, or a mixed (polychromatic) color, and may consist solely of light emitted from the QDs themselves, or of a mixture of light emitted from the QDs and light emitted from the primary source. The QDs desirably are composed of an undoped semiconductor such as CdSe, and may optionally be overcoated to increase photoluminescence. | 2010-06-10 |
20100140586 | QUANTUM DOTS HAVING COMPOSITION GRADIENT SHELL STRUCTURE AND MANUFACTURING METHOD THEREOF - Provided are quantum dots having a gradual composition gradient shell structure which have an improvedluminous efficiency and optical stability, and a method of manufacturing the quantum dots in a short amount of time at low cost. In the method, the quantum dots can be manufactured in a short amount of time at low cost using a reactivity difference between semiconductor precursors, unlike in uneconomical and inefficient conventional methods where shells areformed after forming cores and performing cleaning and redispersion processes. Also, formation of the cores is followed by formation of shells having a composition gradient. Thus, even if the shells are formed to a large thickness, the lattice mismatch between cores and shells is relieved. Furthermore, on the basis of the funneling concept, electrons and holes generated in the shells are transferred to the cores to emit light, thereby obtaining a high luminous efficiency of 80% or more. The quantum dot structure is not limited to Group II-IV semiconductor quantum dots but can be applied to other semiconductors quantum dots, such as Group III-V semiconductors quantum dots and Group IV-IV semiconductors quantum dots. Also, the manufacturing method can be utilized in the development of semiconductor quantum dots having different physical properties, and in various other fields. | 2010-06-10 |
20100140587 | High-Injection Heterojunction Bipolar Transistor - A method for manufacturing high-injection heterojunction bipolar transistor capable of being used as a photonic device is disclosed. A sub-collector layer is formed on a substrate. A collector layer is then deposited on top of the sub-collector layer. After a base layer has been deposited on top of the collector layer, a quantum well layer is deposited on top of the base layer. An emitter is subsequently formed on top of the quantum well layer. | 2010-06-10 |
20100140588 | CATALYST SUPPORT SUBSTRATE, METHOD FOR GROWING CARBON NANOTUBES USING THE SAME, AND TRANSISTOR USING CARBON NANOTUBES - A catalyst supporting substrate includes a first region ( | 2010-06-10 |
20100140589 | FERROELECTRIC TUNNEL FET SWITCH AND MEMORY - A Ferroelectric tunnel FET switch as ultra-steep (abrupt) switch with subthreshold swing better than the MOSFET limit of 60 mV/decade at room temperature combining two key principles: ferroelectric gate stack and band-to-band tunneling in gated p-i-n junction, wherein the ferroelectric material included in the gate stack creates, due to dipole polarization with increasing gate voltage, a positive feedback in the capacitive coupling that controls the band-to-band (BTB) tunneling at the source junction of a silicon p-i-n reversed bias structure, wherein the combined effect of BTB tunneling and ferroelectric negative capacitance offers more abrupt off-on and on-off transitions in the present proposed Ferroelectric tunnel FET than for any reported tunnel FET or any reported ferroelectric FET. | 2010-06-10 |
20100140590 | TRANSISTOR COMPRISING CARBON NANOTUBES FUNCTIONALIZED WITH A NON-FLUORO CONTAINING ELECTRON DEFICIENT OLEFIN OR ALKYNE - The present invention is a transistor and a process for making the transistor in which the semiconductor component comprises at least one carbon nanotube functionalized by cycloaddition with a fluorinated olefin. Functionalization with the fluorinated olefin renders the carbon nanotube semiconducting. | 2010-06-10 |
20100140591 | ELECTRICAL DEVICE FABRICATION FROM NANOTUBE FORMATIONS - A method for forming nanotube electrical devices, arrays of nanotube electrical devices, and device structures and arrays of device structures formed by the methods. Various methods of the present invention allow creation of semiconducting and/or conducting devices from readily grown SWNT carpets rather than requiring the preparation of a patterned growth channel and takes advantage of the self-controlling nature of these carpet heights to ensure a known and controlled channel length for reliable electronic properties as compared to the prior methods. | 2010-06-10 |
20100140592 | Composition Comprising An Indium-Containing Intrinsically Conductive Polymer - The invention relates to a composition which comprises an intrinsically conductive polymer and indium and which is particularly suitable for producing puncture injection layers in light emitting diodes. Methods for producing and using the inventive composition and electronic devices for the production thereof are also disclosed. | 2010-06-10 |
20100140593 | ORGANIC THIN-FILM TRANSISTORS - A thin-film transistor has a semiconducting layer which comprises a halogen-coordinated metal phthalocyanine complex of Formula (I) or Formula (II): | 2010-06-10 |
20100140594 | ORGANIC OPTOELECTRONIC COMPONENT - An organic optoelectronic component is provided, which includes a first electrode, an active layer formed on the first electrode, a second intermediate layer formed on the active layer, and a second electrode formed on the second intermediate layer, wherein the second intermediate layer is formed with a second mixture containing a second polymer and at least a second organic molecule. The second organic molecule is one for forming hole transferring material, electron transferring material, electron blocking material or hole blocking material. The organic optoelectronic component of the present invention is prepared by a solution process, thereby simplifying the process, improving film-formation property, and enhancing component efficiency. | 2010-06-10 |
20100140595 | ORGANIC LIGHT EMITTING DISPLAY DEVICE - An organic light emitting display device includes a first substrate, a plurality of organic light emitting devices on the first substrate, a second substrate arranged opposite and substantially parallel to the first substrate with the organic light emitting devices therebetween, a plurality of spacers between the organic light emitting devices and the second substrate, and a plurality of fillers alternately arranged with the spacers and configured to fill in space between the first substrate and the second substrate, wherein at least portions of the spacers overlap with a plurality of light emitting regions corresponding to the organic light emitting devices. The spacers and fillers are composed of transparent materials having refractive indexes similar to each other so that visibility and image quality are not lowered and the distance between the substrates is substantially constant. | 2010-06-10 |
20100140596 | ORGANIC THIN FILM TRANSISTOR AND METHOD OF MANUFACTURING THE SAME - Provided is an organic thin film transistor and method of forming the same. The organic thin film transistor can decrease threshold voltage and driving voltage by forming a thin organic dielectric layer in a lamella structure using a diblock copolymer including a hydrophilic polymer with high permittivity and a hydrophobic polymer with low permittivity together. Also, the method can simplify the manufacturing process by forming an organic dielectric layer including polymers having two different physical properties through one spin coating. | 2010-06-10 |
20100140597 | Organic thin film transistors comprising thienyl oligomers and their use as gaseous phase sensors - This invention pertains to gaseous analytes sensor devices comprising organic thin film transistor and, in particular sensors able to perform the enantiomeric discrimination of gaseous analytes. The organic thin films are characterized by comprising a compound of formula (I). | 2010-06-10 |
20100140598 | LARGE AREA LIGHT EMITTING DIODE LIGHT SOURCE - The present invention relates to a LED light source comprising at least one layer of light emitting material ( | 2010-06-10 |
20100140599 | SEMICONDUCTOR DEVICE, METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE, AND DISPLAY - A semiconductor device includes an organic semiconductor layer | 2010-06-10 |
20100140600 | THIN FILM TRANSISTORS INCORPORATING INTERFACIAL CONDUCTIVE CLUSTERS - A field effect transistor includes a thin layer of discontinuous conductive clusters between the gate dielectric and the active layer. The active layer can include an organic semiconductor or a blend of organic semiconductor and polymer. Metals, metal oxides, predominantly non-carbon metallic materials, and/or carbon nanotubes may be used to form the layer of conductive clusters. The conductive clusters improve transistor performance and also facilitate transistor fabrication. | 2010-06-10 |
20100140601 | POLYMER COMPOUND AND METHOD FOR PRODUCING THE SAME, AND LIGHT-EMITTING MATERIAL, LIQUID COMPOSITION, THIN FILM, POLYMER LIGHT-EMITTING DEVICE, SURFACE LIGHT SOURCE, DISPLAY DEVICE, ORGANIC TRANSISTOR AND SOLAR CELL, EACH USING THE POLYMER COMPOUND - Disclosed is a polymer compound containing a repeating unit represented by the following general formula (1). (In the formula, R | 2010-06-10 |
20100140602 | ORGANIC ELECTROLUMINESCENCE DEVICE - There is provided an organic electroluminescence device comprising a pair of electrodes on a substrate and at least one organic layer containing a luminescence layer between the electrodes, the luminescence layer comprising at least 3 luminescence materials different in luminescent color, and the at least 3 luminescence materials being platinum complexes. | 2010-06-10 |
20100140603 | BLUE LIGHT EMITTING COMPOUND AND ORGANIC LIGHT EMITTING DIODE DEVICE COMPRISING THE SAME - A blue light emitting compound is provided. The blue light emitting compound has a structure of the following Chemical Formula 1: | 2010-06-10 |
20100140604 | ORGANIC LIGHT-EMITTING DEVICE - A light-emitting layer emits light having an emission spectrum having a primary peak in the range of wavelengths of 430 to 480 nm. The light-emitting layer contains a host compound and a dopant compound. The dopant compound has an electron affinity of 2.93 eV or more higher that is than the host compound. The dopant compound in the lowest excited triplet state has an energy of 1.95 eV or less that is lower than the host compound in the lowest excited triplet state. The dopant compound has a smaller band gap than the host compound. The dopant compound is a hydrocarbon compound. | 2010-06-10 |
20100140605 | ORGANIC ELECTROLUMINESCENCE DEVICE AND LUMINESCENCE APPARATUS - The invention provides an organic EL device including a pair of electrodes and at least one luminescent layer between the pair of electrodes, the at least one luminescent layer including at least two phosphorescent materials, an electrically inert material, and a charge-transporting material, the at least two phosphorescent materials being selected from a blue phosphorescent material having a luminescence peak in a range of from 420 nm to less than 500 nm, a green phosphorescent material having a luminescence peak in a range of from 500 nm to less than 570 nm, or a red phosphorescent material having a luminescence peak in a range of from 570 nm to 650 nm. The invention also provides a luminescence apparatus including the above organic EL device. | 2010-06-10 |
20100140606 | ORGANIC ELECTROLUMINESCENCE DEVICE AND LUMINESCENCE APPARATUS - The invention provides an organic EL device including a pair of electrodes and at least one luminescent layer located between the pair of electrodes, the luminescent layer including a blue phosphorescent material having a luminescence peak in a range of from 420 nm to less than 500 nm, a green phosphorescent material having a luminescence peak in a range of from 500 nm to less than 570 nm, a red phosphorescent material having a luminescence peak in a range of from 570 nm to 650 nm, and a charge-transporting material, the charge-transporting material having a lowest excited triplet energy level (T | 2010-06-10 |
20100140607 | Light Emitting Element and Light Emitting Device Using the Element - An object of the present invention is to provide a high-efficiency white light emitting element having a spectrum in a wide wavelength range. Another object is to provide a white light emitting element in which chromaticity of white color is hard to change over time. Still another object is to provide a white light emitting element in which the shape of an emission spectrum does not tend to depend on current density. A first light emitting element | 2010-06-10 |
20100140608 | Transistor and method of manufacturing the same - Example embodiments provide a transistor and a method of manufacturing the same. The transistor may include a channel layer formed of an oxide semiconductor and a gate having a three-dimensional structure. A plurality of the transistors may be stacked in a perpendicular direction to a substrate. At least some of the plurality of transistors may be connected to each other. | 2010-06-10 |
20100140609 | SEMICONDUCTOR DEVICE, POLYCRYSTALLINE SEMICONDUCTOR THIN FILM, PROCESS FOR PRODUCING POLYCRYSTALLINE SEMICONDUCTOR THIN FILM, FIELD EFFECT TRANSISTOR, AND PROCESS FOR PRODUCING FIELD EFFECT TRANSISTOR - An object of the present invention is to provide a novel semiconductor device which is excellent in stability, uniformity, reproducibility, heat resistance, durability and the like, and can exert excellent transistor properties. The semiconductor device is a thin-film transistor, and this thin-film transistor uses, as an active layer, a polycrystalline oxide semiconductor thin film containing In and two or more metals other than In and having an electron carrier concentration of less than 1×10 | 2010-06-10 |
20100140610 | THIN FILM TRANSISTOR ARRAY PANEL AND METHOD FOR MANUFACTURING THE SAME - A thin film transistor substrate according to an embodiment of the present invention includes: an insulation substrate; a gate line formed on the insulation substrate; a first interlayer insulating layer formed on the gate line; a data line and a gate electrode formed on the first interlayer insulating layer; a gate insulating layer formed on the data line and gate electrode; a semiconductor formed on the gate insulating layer and overlapping the gate electrode; a second interlayer insulating layer formed on the semiconductor; a first connection formed on the second interlayer insulating layer and electrically connecting the gate line and the gate electrode to each other; a drain electrode connected to the semiconductor; a pixel electrode connected to the drain electrode; and a second connection connecting the data line and the semiconductor to each other. | 2010-06-10 |
20100140611 | AMORPHOUS OXIDE AND FIELD EFFECT TRANSISTOR - In a field effect transistor, a channel layer of the field effect transistor is composed of an amorphous oxide including In, Zn, N and O, an atomic composition ratio of N to N and O (N/(N+O)) in the amorphous oxide is equal to or larger than 0.01 atomic percent and equal to or smaller than 3 atomic percent, and the amorphous oxide does not include Ga, or, in a case where the amorphous oxide includes Ga, the number of Ga atoms contained in the amorphous oxide is smaller than the number of N atoms. | 2010-06-10 |
20100140612 | MANUFACTURING METHOD OF THIN FILM TRANSISTOR USING OXIDE SEMICONDUCTOR - A manufacturing method of a thin film transistor having at least a gate electrode, a gate insulation film, an oxide semiconductor layer, a first insulation film, a source electrode, a drain electrode, and a second insulation film on a substrate, including: forming the gate electrode on the substrate; forming the gate insulation film on the gate electrode; forming a semiconductor layer including amorphous oxide on the gate insulation film; patterning the gate insulation film; patterning the oxide semiconductor layer; reducing the oxide semiconductor layer in resistance by forming the first insulation film on the oxide semiconductor layer in the atmosphere not including an oxidized gas; patterning the first insulation film and forming a contact hole between the source electrode and the drain electrode and the oxide semiconductor layer; forming a source electrode layer and a drain electrode layer in the oxide semiconductor layer through the contact hole; forming the source electrode and the drain electrode through the contact hole and allowing the first insulation film to be exposed; patterning the exposed first insulation film and allowing a channel region of the oxide semiconductor layer to be exposed; and increasing the channel region in resistance by forming the second insulation film on the surface including the channel region of the oxide semiconductor layer in the atmosphere including an oxidized gas. | 2010-06-10 |
20100140613 | SEMICONDUCTOR DEVICE - A semiconductor device includes an oxide semiconductor layer provided over a substrate having an insulating surface; a gate insulating film covering the oxide semiconductor layer; a first conductive layer and a second conductive layer laminated in this order over the gate insulating film; an insulating film covering the oxide semiconductor layer and a gate wiring including a gate electrode (the first and second conductive layers); and a third conductive layer and a fourth conductive layer laminated in this order over the insulating film and electrically connected to the oxide semiconductor layer. The gate electrode is formed using the first conductive layer. The gate wiring is formed using the first conductive layer and the second conductive layer. A source electrode is formed using the third conductive layer. A source wiring is formed using the third conductive layer and the fourth conductive layer. | 2010-06-10 |
20100140614 | OXIDE SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME AND ACTIVE MATRIX SUBSTRATE - A phenomenon of change of a contact resistance between an oxide semiconductor and a metal depending on an oxygen content ratio in introduced gas upon depositing an oxide semiconductor film made of indium gallium zinc oxide, zinc tin oxide, or others in an oxide semiconductor thin-film transistor. A contact layer is formed with an oxygen content ratio of 10% or higher in a region from a surface, where the metal and the oxide semiconductor are contacted, down to at least 3 nm deep in depth direction, and a region to be a main channel layer is further formed with an oxygen content ratio of 10% or lower, so that a multilayered structure is formed, and both of ohmic characteristics to the electrode metal and reliability such as the suppression of threshold potential shift are achieved. | 2010-06-10 |
20100140615 | ACTIVE DEVICE ARRAY SUBSTRATE - An active device array substrate including a substrate, a pixel array, and peripheral circuit is provided. The substrate has a display region and a peripheral region. The pixel array is disposed on the display region of the substrate, wherein the pixel array includes signal lines and pixels, each of the pixels is electrically connected to the signal lines respectively and extends from the display region to the peripheral region. The peripheral circuit is disposed on the peripheral region and includes a testing circuit electrically connected to the signal lines. Additionally, the testing circuit includes shorting bars and connecting conductors, wherein each of the signal lines is electrically connected to one of the shorting bars through one of the connecting connectors respectively, and at least two of the signal lines connected to the same shorting bar are electrically connected to each other through one of the connecting conductors. | 2010-06-10 |
20100140616 | Electronic device and method for manufacturing the same - Disclosed herewith is an electronic device capable of preventing the surfaces of the analyzing terminals from such external factors as oxidation, etc. so as to improve the accuracy of the analysis of the electronic device. The electronic device has plural signal lines and is to be mounted on a wiring substrate. The electronic device also includes plural lead terminals connected to the signal lines electrically and to be mounted on the wiring substrate, as well as analyzing terminals connected electrically to the signal lines and to be connected to an analyzing device upon analyzing the electronic device respectively and a protective member with insulating performance, which covers at least one of the analyzing terminals | 2010-06-10 |
20100140617 | SEMICONDUCTOR DEVICE MANUFACTURING METHOD AND SEMICONDUCTOR DEVICE - A semiconductor device manufacturing method includes the steps of: forming a transistor on a surface side of a silicon layer of a silicon-on-insulator substrate, the silicon-on-insulator substrate being formed by laminating a substrate, an insulating layer, and the silicon layer; forming a first insulating film covering the transistor and a wiring section including a part electrically connected to the transistor on the silicon-on-insulator substrate; measuring a threshold voltage of the transistor through the wiring section; forming a supporting substrate on a surface of the first insulating film with a second insulating film interposed between the supporting substrate and the first insulating film; removing at least a part of the substrate and the insulating layer on a back side of the silicon-on-insulator substrate; and adjusting the threshold voltage of the transistor on a basis of the measured threshold voltage. | 2010-06-10 |
20100140618 | Sensor and method for the manufacture thereof - A sensor includes at least one micro-patterned diode pixel that has a diode implemented in, on, or under a diaphragm, and the diaphragm in turn being implemented above a cavity. The diode is contacted via supply leads that are implemented at least in part in, on, or under the diaphragm, and the diode is implemented in a polycrystalline semiconductor layer. The diode is implemented by way of two low-doped diode regions or at least one low-doped diode region. At least parts of the supply leads are implemented by way of highly doped supply lead regions of the shared polycrystalline semiconductor layer. | 2010-06-10 |
20100140619 | PHOTOVOLTAIC DEVICE - The present invention is related to a photovoltaic device, the device comprising a first layer of a first semiconductor material of a first conductivity type, a second layer of a second semiconductor material of the opposite conductivity type of the first layer, and a third layer of a third porous semiconductor material situated between the first layer and the second layer. The present invention also provides a method for producing the photovoltaic device. | 2010-06-10 |
20100140620 | FLAT-PANEL DISPLAY SEMICONDUCTOR PROCESS FOR EFFICIENT MANUFACTURING - An embodiment is a method and apparatus to fabricate a flat panel display. A poly-last structure is formed for a display panel using an amorphous silicon or amorphous silicon compatible process. The poly-last structure has a channel silicon precursor. The display panel is formed from the poly-last structure using a polysilicon specific or polysilicon compatible process. | 2010-06-10 |
20100140621 | LIGHT BLOCKING MEMBER HAVING VARIABE TRANSMITTANCE, DISPLAY PANEL INCLUDING THE SAME, AND MANUFACTURING METHOD THEREOF - A light blocking member having variable transmittance, a display panel including the same, and a manufacturing method thereof. A light blocking member having a variable transmittance according to one exemplary embodiment includes a polymerizable compound, a binder, and a thermochromic material that exhibits a black color at a temperature below a threshold temperature and becomes transparent at a temperature above the threshold temperature. | 2010-06-10 |
20100140622 | THIN FILM TRANSISTOR, FABRICATING METHOD OF THIN FILM TRANSISTOR AND DISPLAY DEVICE USING THE SAME - A thin film transistor comprises: a first transistor region and a second transistor region defined on a substrate; and a first transistor and a second transistor respectively disposed on the first and second transistor regions, the first transistor comprising: a first semiconductor layer having source, channel, and drain regions defined on the substrate; a first insulating film disposed on the first semiconductor layer; a first transparent electrode disposed on the first insulating film and formed corresponding to the channel region of the first semiconductor layer; and a second insulating film disposed on the first transparent electrode, and the second transistor comprising: a second semiconductor layer having source, channel, and drain regions defined on the substrate; the first insulating film disposed on the second semiconductor layer; a second transparent electrode disposed on the first insulating film and formed corresponding to the channel region of the second semiconductor layer; a second gate disposed on the second transparent electrode; and the second insulating film disposed on the second gate. | 2010-06-10 |
20100140623 | ARRAY SUBSTRATE FOR DISPLAY DEVICE AND METHOD OF FABRICATING THE SAME - An array substrate for a display device includes: a substrate; a gate electrode on the substrate; a gate insulating layer on the gate electrode, the gate insulating layer having an organic-inorganic hybrid material; a semiconductor layer on the gate insulating layer over the gate electrode; source and drain electrodes spaced apart from each other on the semiconductor layer; a passivation layer on the source and drain electrodes, the passivation layer having a drain contact hole exposing the drain electrode; and a pixel electrode on the passivation layer, the pixel electrode connected to the drain electrode through the drain contact hole. | 2010-06-10 |
20100140624 | Liquid Crystal Display Device - A liquid crystal display device, includes: a gate line ( | 2010-06-10 |
20100140625 | THIN FILM TRANSISTOR ARRAY SUBSTRATE STRUCTURES AND FABRICATION METHOD THEREOF - A thin film transistor array substrate structure. The array substrate structure includes a thin film transistor array substrate, an organic material layer formed thereon, and a plurality of black matrices and color filter patterns disposed on the organic material layer. The invention also provides a method of fabricating the thin film transistor array substrate. | 2010-06-10 |
20100140626 | THIN FILM TRANSISTOR ARRAY PANEL AND METHOD FOR MANUFACTURING THE SAME - A method for manufacturing a TFT array panel including forming a gate line having a gate electrode on a insulating layer, a gate insulating layer on the gate line, a semiconductor on the gate insulating layer, an ohmic contact on the semiconductor, a data line having a source electrode and a drain electrode apart form the source electrode on the ohmic contact, a passivation layer having a contact hole to expose the drain electrode, and a pixel electrode connected to the drain electrode through the contact hole. The drain electrode and the source electrode are formed by a photolithography using a negative photoresist pattern. The negative photoresist pattern includes a first portion having a first thickness corresponding to a channel area, a second portion having a second thickness corresponding to a data line area, and a third portion having a third thickness corresponding to another area. | 2010-06-10 |
20100140627 | Package for Semiconductor Devices - A packaged semiconductor device including a semiconductor die mounted on a header of a leadframe. A plurality of spaced external conductors extends from the header and at least one of the external conductors has a bond wire post at one end thereof such that a bonding wire extends between the bond wire post and the semiconductor die. The package device also includes a housing, which encloses the semiconductor die, the header, the bonding wire and the bonding wire post resulting in an insulated packaged device. | 2010-06-10 |
20100140628 | Insulated gate bipolar transistors including current suppressing layers - An insulated gate bipolar transistor (IGBT) includes a first conductivity type substrate and a second conductivity type drift layer on the substrate. The second conductivity type is opposite the first conductivity type. The IGBT further includes a current suppressing layer on the drift layer. The current suppressing layer has the second conductivity type and has a doping concentration that is larger than a doping concentration of the drift layer. A first conductivity type well region is in the current suppressing layer. The well region has a junction depth that is less than a thickness of the current suppressing layer, and the current suppressing layer extends laterally beneath the well region. A second conductivity type emitter region is in the well region. | 2010-06-10 |
20100140629 | LIGHT-EMITTING DIODE AND METHOD FOR FABRICATING THE SAME - The invention discloses a method for fabricating a light-emitting diode. In an embodiment of the invention, the method comprises the following steps of (a) preparing a substrate; (b) forming an epitaxial layer on the substrate, wherein the epitaxial layer has an upper surface; (c) forming a mask layer on a first region of the upper surface of the epitaxial layer; (d) forming a semiconductor multi-layer structure on a second region of the upper surface of the epitaxial layer, wherein the second region is distinct from the first region; (e) removing the mask layer formed on the first region of the upper surface of the epitaxial layer; and (f) forming an electrode on the first region of the upper surface of the epitaxial layer. | 2010-06-10 |
20100140630 | Method And Apparatus For Manufacturing LED Devices Using Laser Scribing - A method of manufacturing a light-emitting device using laser scribing to improve overall light output is disclosed. Upon placing a semiconductor wafer having light emitting diode (“LED”) devices separated by streets on a wafer chuck, the process arranges a first surface of semiconductor wafer containing front sides of the LED devices facing up and a second surface of semiconductor wafer containing back sides of the LED devices facing toward the wafer chuck. After aligning a laser device over the first surface of the semiconductor wafer above a street, the process is configured to focus a high intensity portion of a laser beam generated by the laser device at a location in a substrate closer to the back sides of the LED devices. | 2010-06-10 |
20100140631 | DISPLAY DEVICE AND METHOD FOR MANUFACTURING THE SAME - Provided are a display device in which variation in output characteristics of the photodiode is suppressed, and a method for manufacturing the display device. The display device is provided with the active matrix substrate ( | 2010-06-10 |
20100140632 | Multi-Electrode Light Emitting Device - The invention relates to a broad-band light emitting diode having an active layer composed of a plurality of light emission regions of differing materials for emitting light at a plurality of wavelengths, wherein each of the emission regions of the active layer is electrically controlled by a separate electrode for providing a broad-band emission or optical gain with a multi-point control of its spectral profile. | 2010-06-10 |
20100140633 | Methods for Combining Light Emitting Devices in a Package and Packages Including Combined Light Emitting Devices - Methods of forming a light emitting device package assembly include defining a chromaticity region in a two dimensional chromaticity space, and subdividing the defined chromaticity region into at least three chromaticity subregions, providing a plurality of light emitting devices that emit light having a chromaticity that falls within at least one of the defined chromaticity subregions, selecting at least three of the plurality of light emitting devices, each of the three light emitting devices emits light from a different one of the chromaticity subregions, and mounting the selected light emitting devices on a light emitting device package body. | 2010-06-10 |
20100140634 | SOLID STATE EMITTER PACKAGE INCLUDING RED AND BLUE EMITTERS - A solid state emitter package includes a principally red solid state emitter having peak emissions within 590 nm to 680 nm, a principally blue solid state emitter having peak emissions within 400 nm to 480 nm, and at least one of a common leadframe, common substrate, and common reflector, with the package being devoid of any principally green solid state emitters having peak emissions between 510 nm and 575 nm. A solid state emitter package may include at least one electrically conductive path associated with the solid state emitter package that is not in electrical communication with any solid state emitter of the solid state emitter package, with such electrically conductive path being susceptible to inclusion of a jumper or a control element. | 2010-06-10 |
20100140635 | Composite high reflectivity layer - A high efficiency light emitting diode with a composite high reflectivity layer integral to said LED to improve emission efficiency. One embodiment of a light emitting diode (LED) chip comprises an LED and a composite high reflectivity layer integral to the LED to reflect light emitted from the active region. The composite layer comprises a first layer, and alternating plurality of second and third layers on the first layer, and a reflective layer on the topmost of said plurality of second and third layers. The second and third layers have a different index of refraction, and the first layer is at least three times thicker than the thickest of the second and third layers. For composite layers internal to the LED chip, conductive vias can be included through the composite layer to allow an electrical signal to pass through the composite layer to the LED. | 2010-06-10 |
20100140636 | Light Emitting Diode with Improved Light Extraction - A light emitting diode is disclosed that includes an active region and a plurality of exterior surfaces. A light enhancement feature is present on at least portions of one of the exterior surfaces of the diode, with the light enhancement feature being selected from the group consisting of shaping and texturing. A light enhancement feature is present on at least portions of each of the other exterior surfaces of the diode, with these light enhancement features being selected from the group consisting of shaping, texturing, and reflectors. | 2010-06-10 |
20100140637 | Light Emitting Diode with a Dielectric Mirror having a Lateral Configuration - A light emitting diode is disclosed that includes an active structure, a first ohmic contact on the active structure, and a transparent conductive oxide layer on the active structure opposite the first ohmic contact. The transparent conductive oxide layer has a larger footprint than said active structure. A dielectric mirror is positioned on the transparent conductive oxide layer opposite said active structure and a second contact is positioned on the transparent conductive oxide layer opposite the dielectric mirror and separated from the active structure. | 2010-06-10 |
20100140638 | THERMOSETTING RESIN COMPOSITION FOR LIGHT REFLECTION, METHOD FOR MANUFACTURING THE RESIN COMPOSITION AND OPTICAL SEMICONDUCTOR ELEMENT MOUNTING SUBSTRATE AND OPTICAL SEMICONDUCTOR DEVICE USING THE RESIN COMPOSITION - This invention provides a heat curable resin composition for light reflection, which, after curing, can realize high reflectance in a range of visible light to near ultraviolet light, has excellent heat deterioration resistance and tablet moldability, and is less likely to cause burrs during transfer molding, and a process for producing the resin composition, and an optical semiconductor element mounting substrate and an optical semiconductor device using the resin composition. The heat curable resin composition for light reflection comprises a heat curable component and a white pigment and is characterized in that the length of burrs caused upon transfer molding under conditions of molding temperature 100° C. to 200° C., molding pressure not more than 20 MPa, and molding time 60 to 120 sec is not more than 5 mm and the light reflectance after heat curing at a wavelength of 350 nm to 800 nm is not less than 80%. The resin composition can be used for constructing the optical semiconductor element mounting substrate and the optical semiconductor device. | 2010-06-10 |
20100140639 | OPTICAL SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING OPTICAL SEMICONDUCTOR DEVICE - An optical semiconductor device includes a light emitting element having a first surface and a second surface, the first surface having a first electrode provided thereon, the second surface being located on the opposite side from the first surface and having a second electrode provided thereon; a first conductive member connected to the first surface; a second conductive member connected to the second surface; a first external electrode connected to the first conductive member; a second external electrode connected to the second conductive member; and an enclosure sealing the light emitting element, the first conductive member, and the second conductive member between the first external electrode and the second external electrode, and being configured to transmit light emitted from the light emitting element. | 2010-06-10 |
20100140640 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - Provided is an optical semiconductor device includes: a light-emitting layer having a first main surface, a second main surface opposed to the first main surface, a first electrode and a second electrode which are formed on the second main surface; a fluorescent layer provided on the first main surface; a light-transmissive layer provided on the fluorescent layer and made of a light-transmissive inorganic material; a first metal post provided on the first electrode; a second metal post provided on the second electrode; a sealing layer provided on the second main surface so as to seal in the first and second metal posts with one ends of the respective first and second metal posts exposed; a first metal layer provided on the exposed end of the first metal post; and a second metal layer provided on the exposed end of the second metal post. | 2010-06-10 |
20100140641 | SEMICONDUCTOR LIGHT EMITTING APPARATUS INCLUDING SEMICONDUCTOR LIGHT EMITTING DEVICE, RED PHOSPHOR AND GREEN PHOSPHOR, AND IMAGE DISPLAY USING THE SEMICONDUCTOR LIGHT EMITTING APPARATUS - A semiconductor light emitting apparatus including a semiconductor light emitting device, a green phosphor emitting green light and a red phosphor emitting red light is provided. The green phosphor is a rare earth activated inorganic phosphor, and the red phosphor is a semiconductor particle phosphor. The minimum among respective differences between respective wavelengths at local minima of an absorption spectrum of the red phosphor and the peak wavelength of an emission spectrum of the green phosphor is not more than 25 nm. An image display including the semiconductor light emitting apparatus is also provided. | 2010-06-10 |
20100140642 | LIGHT EMITTING DEVICE AND METHOD FOR MANUFACTURING THE SAME - The light emitting device of the invention comprises a first electrode, a second electrode being light transmitting, and a carrier sandwiched between the first electrode and the second electrode and containing light emitters, wherein the first electrode has a plurality of projections or a pn junction formed with a p-type semiconductor and an n-type semiconductor each on a surface being in contact with the carrier. | 2010-06-10 |
20100140643 | LIGHT EMITTING DEVICE AND METHOD OF MANUFACTURING THE SAME - The light emitting device, and corresponding method of manufacture, the light emitting device including a second electrode layer; a second conductive type semiconductor layer formed on the second electrode layer; an active layer formed on the second conductive type semiconductor layer; a first conductive type semiconductor layer formed with a first photonic crystal that includes a mask layer and an air gap formed on the active layer; and a first electrode layer formed on the first conductive type semiconductor layer. | 2010-06-10 |
20100140644 | ORGANIC EL DISPLAY DEVICE AND MANUFACTURING METHOD THEREOF - An object of the invention is to provide an organic EL display device manufacturing method that allows the reliability of the organic EL display device having undergone a defect repair process to be improved. A method for manufacturing an organic EL display device, the method including an organic EL element substrate formation step of forming at least one organic EL element on an organic EL element substrate, the organic EL element including an organic EL film, an anode electrode and a reflection electrode that form a first conductive film provided below the organic EL film, and a cathode electrode that forms a second conductive film provided above the organic EL film, a resin sealing step of providing a thermoplastic sealing resin to cover the upper side of the organic EL element, a defect detection step of detecting a defect in the organic EL element, and a defect elimination step of eliminating the defect detected in the defect detection step by irradiating the defect with a laser beam. | 2010-06-10 |
20100140645 | ORGANIC ELECTROLUMINESCENCE DEVICE - Disclosed is an organic electroluminescence device containing a pair of electrodes on a substrate, two or more luminescence layers disposed between the electrodes, and an intermediate layer containing a charge transporting material and disposed between the two or more luminescence layers, each of the two or more luminescence layers contains at least one phosphorescence material selected from a blue phosphorescence material having an emission peak from 420 nm to less than 500 nm, a green phosphorescence material having an emission peak from 500 nm to less than 570 nm, and a red phosphorescence material having an emission peak from 570 nm to 650 nm, the phosphorescence material contained in the respective luminescence layers having different emission peaks from one another; and the charge transporting material contained in the intermediate layer has an energy difference (T1) of 2.7 eV or more between a ground state and an excited triplet state and the energy difference (T1) of the charge transporting material is higher by at least 0.15 eV than T1 of a phosphorescence material having the shortest wavelength emission among the phosphorescence materials contained in the two or more luminescence layers. | 2010-06-10 |
20100140646 | SEMICONDUCTOR LIGHT EMITTING DIODE - A semiconductor LED is disclosed. The semiconductor LED can include a light emitting structure, which can be composed of an N-type semiconductor layer, an active layer, and a P-type semiconductor layer stacked in said order; a transparent electrode, formed on an upper surface of the light emitting structure; and a P-type electrode, formed on an upper surface of the transparent electrode. An insulator for blocking electric currents can be formed within the light emitting structure, at a position corresponding with the position of the P-type electrode. Certain embodiments of the invention can be used to prevent the occurrences of light reflecting off the lower surface of the P-type electrode, and thereby improve light-emitting efficiency. | 2010-06-10 |
20100140647 | SEMICONDUCTOR LIGHT EMITTING DIODE - A semiconductor LED and a method manufacturing the semiconductor LED are disclosed. The method can include: forming a light emitting structure, which includes an N-type semiconductor layer, an active layer, and a P-type semiconductor layer stacked together, on a substrate; processing a division groove in the shape of a dotted line from the direction of the substrate or from the direction of the light emitting structure; and dividing the substrate and the light emitting structure along the division groove by applying pressure to at least one of the substrate and the light emitting structure. Embodiments of the invention can prevent total reflection for light emitted through the sides, and as a result, the light emitting efficiency can be improved. | 2010-06-10 |
20100140648 | SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD FOR PRODUCING THE SAME - A semiconductor light emitting device can be configured to maintain high luminance and to suppress the possibility of the occurrence of wire breakage with high quality and reliability. A method for producing such a semiconductor light emitting device with a high process yield is also disclosed. The semiconductor light emitting device can include a sealing member into which a reflective filler can be mixed in such an amount (concentration) range that luminous flux with a predetermined amount can be maintained and the possibility of the occurrence of wire breakage can be lowered. Various sealing members containing a reflective filler with a plurality of concentrations within this range can be prepared in advance. By taking advantage of the phenomenon where chromaticity shifts depending on the concentration of the reflective filler, a semiconductor light emitting device with less chromaticity variation can be produced utilizing a sealing member with a particular concentration in accordance with the chromaticity of a particular semiconductor light emitting element that is used and which may be varied during fabrication. | 2010-06-10 |
20100140649 | ORGANIC LIGHT EMITTING DIODE DISPLAY AND METHOD OF MANUFACTURING THE SAME - An organic light emitting diode display includes a substrate member, a plurality of pixel electrodes formed on the substrate member, an organic emission layer formed on the pixel electrodes, and a first common electrode formed on the organic emission. A transmitting layer may be formed on the first common electrode and is configured to be substantially antireflective. A second common electrode may be formed on the transmitting layer and the first common electrode is electrically connected with the second common electrode. | 2010-06-10 |
20100140650 | Light emitting element, light emitting device using the light emitting element, and method for manufacturing light emitting element - A light emitting device includes a light emitting element, including a substrate including group III nitride compound semiconductor, a luminous layer structure including group III nitride compound semiconductor, the luminous layer structure formed on a first surface of the substrate, and an irregular surface formed on a second surface of the substrate, the second surface including a principal light emission surface, and a translucent sealing member for sealing the light emitting element, the translucent sealing member being separated from the second surface. At least one of translucent gel material and an inert gas is filled between the light emitting element and the translucent sealing member. | 2010-06-10 |
20100140651 | DIFFRACTION GRATING LIGHT-EMITTING DIODE - The present invention provides a diffraction grating light-emitting diode in which the external quantum efficiency is improved by appropriately setting the period of holes when the holes are two-dimensionally periodically formed. A light-emitting diode is configured by laminating, on a sapphire substrate, an n-type GaN layer, an InGaN/GaN active layer, a p-type GaN layer, and a transparent electrode layer. Further, a large number of holes are two-dimensionally periodically formed in the transparent electrode layer, the p-type GaN layer, the InGaN/GaN active layer, and the n-type GaN layer so as to extend in a direction substantially perpendicular to these layers. Assuming that the non-radiative recombination rate is v | 2010-06-10 |
20100140652 | SURFACE-TEXTURED ENCAPSULATIONS FOR USE WITH LIGHT EMITTING DIODES - Surface-textured encapsulations for use with light emitting diodes. In an aspect, a light emitting diode apparatus is provided that includes a light emitting diode, and an encapsulation formed upon the light emitting diode and having a surface texture configured to extract light. In an aspect, a method includes encapsulating a light emitting diode with an encapsulation having a surface texture configured to extract light. In an aspect, a light emitting diode lamp is provided that includes a package, at least one light emitting diode disposed within the package, and an encapsulation formed upon the at least one light emitting diode having a surface texture configured to extract light. In another aspect, a method includes determining one or more regions of an encapsulation, the encapsulation configured to cover a light emitting diode, and surface-texturing each region of the encapsulation with one or more geometric features that are configured to extract light. | 2010-06-10 |
20100140653 | LIGHT EMITTING DIODE STRUCTURE AND METHOD FOR FABRICATING THE SAME - The present invention discloses a light emitting diode structure and a method for fabricating the same. In the present invention, a substrate is placed in a solution to form a chemical reaction layer on carved regions; the carved region is selectively etched to form a plurality of concave zones and form a plurality of convex zones; a semiconductor layer structure is epitaxially grown on the element regions and carved regions of the substrate; the semiconductor layer structure on the element regions is fabricated into a LED element with a photolithographic process. | 2010-06-10 |
20100140654 | LIGHT EMITTING ELEMENT MODULE AND METHOD FOR SEALING LIGHT EMITTING ELEMENT - Disclosed is a method for sealing a light-emitting device wherein formation of air bubbles in a light-emitting device module can be prevented by performing no gelation after fitting of a cover member. This method also enables to seal a light-emitting device by using a gel sealing material composed of a gel precursor which uses a solvent. Also disclosed is a light-emitting module formed by such a sealing method. In this method for sealing a light-emitting device, gelation of the gel precursor of a gel sealing material is performed before placing the precursor on the light-emitting device, and thus no gelation is necessary after fitting of a cover member. Consequently, a gel precursor having high viscosity that is difficult to be used in an injection method can be used in this method. Furthermore, a substance which requires use of a solvent can be used as a gel precursor of a gel sealing material. A light-emitting device module with high luminance wherein no air bubbles are included can be obtained by this method. | 2010-06-10 |
20100140655 | TRANSPARENT HEAT SPREADER FOR LEDS - A heat spreader for an LED can include a thermally conductive and optically transparent member. The bottom side of the heat spreader can be configured to attach to a light emitting side of the LED. The top and/or bottom surface of the heat spreader can have a phosphor layer formed thereon. The heat spreader can be configured to conduct heat from the LED to a package. The heat spreader can be configured to conduct heat from the phosphors to the package. By facilitating the removal of heat from the LED and phosphors, more current can be used to drive the LED. The use of more current facilitates the construction of a brighter LED, which can be used in applications such as flashlights, displays, and general illumination. By facilitating the removal of heat from the phosphors, desired colors can be better provided. | 2010-06-10 |
20100140656 | Semiconductor Light-Emitting Device - The present disclosure relates to a semiconductor light-emitting device generating light by recombination of electrons and holes. The semiconductor light-emitting device includes: a first bonding electrode and a second bonding electrode supplying the current for the recombination of the electrons and holes; a first branch electrode and a second branch electrode extended from the first bonding electrode; and a third branch electrode extended from the second bonding electrode, located between the first branch electrode and the second branch electrode, and having a first interval from the first branch electrode and a second interval smaller than the first interval from the second branch electrode. The second branch electrode is located farther from the center of the light-emitting device than the first branch electrode, and the second branch electrode is located farther from the center of the light-emitting device than the third branch electrode. | 2010-06-10 |
20100140657 | POWER SEMICONDUCTOR DEVICE AND THE METHOD OF MANUFACTURING THE SAME - A semiconductor device according to the invention includes n-type semiconductor substrate | 2010-06-10 |
20100140658 | Method of manufacturing semiconductor device including insulated gate bipolar transistor and diode - In a method of manufacturing a semiconductor device, a semiconductor substrate of a first conductivity type having first and second surfaces is prepared. Second conductivity type impurities for forming a collector layer are implanted to the second surface using a mask that has an opening at a portion where the collector layer will be formed. An oxide layer is formed by enhanced-oxidizing the collector layer. First conductivity type impurities for forming a first conductivity type layer are implanted to the second surface using the oxide layer as a mask. A support base is attached to the second surface and a thickness of the semiconductor substrate is reduced from the first surface. An element part including a base region, an emitter region, a plurality of trenches, a gate insulating layer, a gate electrode, and a first electrode is formed on the first surface of the semiconductor substrate. | 2010-06-10 |
20100140659 | ELECTROSTATIC DISCHARGE PROTECTION DEVICE AND RELATED CIRCUIT - An ESD protection device comprises a P-type substrate, a first substrate-triggered silicon controlled rectifiers (STSCR) disposed in the P-type substrate and a second STSCR disposed in the P-type substrate. The first STSCR comprises a first N-well, a first P-well, a first N | 2010-06-10 |
20100140660 | Semiconductor Heterostructure Diodes - Planar Schottky diodes for which the semiconductor material includes a heterojunction which induces a 2DEG in at least one of the semiconductor layers. A metal anode contact is on top of the upper semiconductor layer and forms a Schottky contact with that layer. A metal cathode contact is connected to the 2DEG, forming an ohmic contact with the layer containing the 2DEG. | 2010-06-10 |
20100140661 | APPARATUS FOR CONVERTING OF INFRARED RADIATION INTO ELECTRICAL CURRENT - An apparatus is described for converting infrared radiation into electric current with a photodiode which comprises two semiconductor layers ( | 2010-06-10 |
20100140662 | OPTICAL RECEIVER AND METHOD OF FORMING THE SAME - Provided are an optical receiver and a method of forming the same. The optical receiver includes a lens, a photo detector, and a hetero-junction bipolar transistor. The lens is attached to a backside of a substrate. The photo detector is disposed on a top surface of the substrate. The hetero-junction bipolar transistor is disposed on the top surface of the substrate. The lens condenses an incident optical signal to transmit the condensed optical signal to the photo detector. | 2010-06-10 |
20100140663 | CMOS Compatable fabrication of power GaN transistors on a <100> silicon substrate - In an AlGaN channel transistor formed on a <100> orientation silicon wafer, a hole with walls slanted at 54 degrees is etched into the silicon to provide a <111> orientation substrate surface for forming the AlGaN channel transistor. | 2010-06-10 |
20100140664 | Methods of Fabricating Nitride-Based Transistors with a Cap Layer and a Recessed Gate and Related Devices - An anneal of a gate recess prior to formation of a gate contact, such as a Schottky contact, may reduce gate leakage and/or provide a high quality gate contact in a semiconductor device, such as a transistor. The use of an encapsulation layer during the anneal may further reduce damage to the semiconductor in the gate recess of the transistor. The anneal may be provided, for example, by an anneal of ohmic contacts of the device. Thus, high quality gate and ohmic contacts may be provided with reduced degradation of the gate region that may result from providing a recessed gate structure as a result of etch damage in forming the recess. | 2010-06-10 |
20100140665 | Gallium Nitride Material Devices and Thermal Designs Thereof - Gallium nitride material devices and methods associated with the devices are described. The devices may be designed to provide enhanced thermal conduction and reduced thermal resistance. The increased thermal conduction through and out of the gallium nitride devices enhances operability of the devices, including providing excellent RF operation, reliability, and lifetime. | 2010-06-10 |
20100140666 | Semiconductor devices having L-shaped cell blocks - Semiconductor devices are provided including a plurality of L-shaped cell blocks each including,a cell array and a plurality of decoders disposed in horizontal and vertical directions of the cell array. The plurality of L-shaped cell blocks are oriented in a diagonal direction intersecting the horizontal and vertical directions. Related methods are also provided herein. | 2010-06-10 |
20100140667 | SOLID-STATE IMAGING DEVICE AND MANUFACTURING METHOD THEREFOR - Disclosed herein is a solid-state imaging device including a first transfer electrode portion and a second transfer electrode portion having a pattern area rate higher than that of the first transfer electrode portion. The first transfer electrode portion includes a plurality of first transfer electrodes having a single-layer structure of metal material. The second transfer electrode portion includes a plurality of second transfer electrodes having a single-layer structure of polycrystalline silicon or amorphous silicon. | 2010-06-10 |
20100140668 | SHALLOW TRENCH ISOLATION REGIONS IN IMAGE SENSORS - An image sensor includes an imaging area that includes a plurality of pixels, with each pixel including a photosensitive charge storage region formed in a substrate. A passivation implantation region contiguously surrounds the side wall and bottom surfaces of each trench in the one or more trench isolation regions. A portion of each passivation implantation region is laterally adjacent to a respective charge storage region and resides only in an isolation gap disposed between the respective charge storage region and a respective trench isolation region and does not substantially reside under the charge storage region. Each passivation implantation region is formed by implanting one or more dopants at a low energy into the side wall and bottom surfaces of each trench after annealing the image sensor and prior to filling the trenches with an insulating material. | 2010-06-10 |
20100140669 | MICROFABRICATION METHODS FOR FORMING ROBUST ISOLATION AND PACKAGING - Exemplary embodiments provide an electrical single-crystal silicon (SCS) isolation device and a method for manufacturing the SCS isolation device. The isolation device can include a trench isolation structure formed using a trench having sidewall dielectrics and a follow-up filling of a metal or a polymer that is conductive or nonconductive. In an exemplary embodiment, metals such as a copper can be electroplated to fill the trench to provide robust mechanical support and a thermal conducting path for subsequent fabrication processes. In addition, exemplary embodiments provide a CMOS compatible process for self-packaging the disclosed isolation device or other devices from CMOS processing. In an exemplary embodiment, a backside packaging can be performed on a structured substrate prior to fabricating the active structures from the front side. Following the formation of the active structures (e.g., movable micro-sensors), a front-side packaging can be performed using bonding pads to complete the disclosed self-packaging process. | 2010-06-10 |
20100140670 | INTEGRATION OF MEMS AND CMOS DEVICES ON A CHIP - A method of forming CMOS circuitry integrated with MEMS devices includes bonding a wafer to a top surface layer having contacts formed to CMOS circuitry. A handle wafer is then removed from one of the top or bottom surfaces of the CMOS circuitry, and MEMS devices are formed in a remaining silicon layer. | 2010-06-10 |
20100140671 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SEMICONDUCTOR DEVICE - A method of manufacturing a semiconductor device includes forming silicon pillar | 2010-06-10 |