24th week of 2022 patent applcation highlights part 66 |
Patent application number | Title | Published |
20220189710 | UNITIZED THREE PHASE SWITCH WITH A POWER ACTUATED TRANSFORMABLE BASE AND METHOD FOR OPERATION - Switch gear for interconnecting a plurality of power transmission lines including a number of high voltage switches arranged in three phase unitized relationship for routing power. The switches are each pre-mounted on a transverse beam which is operatively attached between two oppositely disposed longitudinal parallel beams forming a unitized switch assembly with a common base structure with a transformable parallelogram outer perimeter which may be attached in the field to a support structure. The outer perimeter of the common base structure of the unitized assembly transformable common base can be transformed with a power actuator from a rectangular configuration to a rhomboid configuration that permits the width of the unitized assembly to be reduced so that the assembly can be transported by truck to an installation site and then the switch assembly may be transformed back to the rectangular configuration with the final width for installation at the site. | 2022-06-16 |
20220189711 | Contactor Module and a Contactor Module Arrangement - A contactor module is adapted to detect a switching state of a contactor. The contactor module includes a movable element that is arranged to transmit the movement of a switching element of the contactor to the contactor module; and a deflection lever attached to the movable element. The deflection lever is arranged to indicate the switching state. | 2022-06-16 |
20220189712 | INDUCTANCE CONTROL SYSTEM - An example polarity inverter includes multiple contactors, each of which includes switches that are controllable to configure a current path. Each of the multiple contactors includes contacts, which are interleaved such that first contacts to receive voltage having a first polarity alternate with second contacts to receive voltage having a second polarity, where the first polarity and the second polarity are different. The polarity inverter also includes a first conductive plate to connect electrically to each of the first contacts, and a second conductive plate to connect electrically to each of the second contacts. The first conductive plate and the second conductive plate are in parallel. A dielectric material is between the first conductive plate and the second conductive plate. | 2022-06-16 |
20220189713 | Hybrid Switching Apparatus for Electric Grids - A switching apparatus for an electric grid includes first and second electric terminals, each having first and second electric branches having a plurality of switching devices. The first electric branch includes a first switching device switchable between open and closed states, which is driven by a current flowing along said first switching device and without receiving an external control signal or an external power supply, said first switching device switching from said closed state to said open state, when the current flowing along said switching apparatus exceeds a corresponding predefined threshold value or when the changing rate of the current flowing along said switching apparatus exceeds a corresponding predefined threshold value or upon a combination of these two conditions. A second switching device is connected in series with the first switching device and is switchable between closed and open states upon receiving a corresponding input control signal. | 2022-06-16 |
20220189714 | KEYSWITCH SUPPORT CONNECTION STRUCTURE AND KEYSWITCH STRUCTURE THEREWITH - A keyswitch support connection structure is a combined structure which includes a structural plate and a joining portion. The joining portion and the structural plate are firmly engaged with each other through a joining structure of the structural plate. The joining structure includes at least one of a protruding portion, a through hole, a side hole, a joining hole, a cantilever plate, and a protruding bridge portion. The joining portion includes at least one hook arm, configured to forma support connection portion. A keyswitch structure includes a base, a keycap above the base, two keyswitch supports connected to and between the base and the keycap, and the keyswitch support connection structure structurally integrated into the base or the keycap. The keycap is vertically movable relative to the base through the two keyswitch supports. One of the two keyswitch supports is connected to the support connection portion. | 2022-06-16 |
20220189715 | KEY STRUCTURE - The invention provides a key structure, which includes a bottom plate, a keycap, an elastic element, a first bracket, and a second bracket. The keycap is disposed on the bottom plate and has multiple first pivoting portions. The elastic element is disposed under the keycap. The first bracket is disposed between the keycap and the bottom plate, and the first bracket is pivotally connected to the first pivoting portions. The second bracket is disposed between the keycap and the bottom plate, the second bracket is rotatably pivoted to the first bracket, and the number of the first pivoting portions is greater than two. | 2022-06-16 |
20220189716 | KEY STRUCTURE - The disclosure provides a key structure, including a first electrode, a key cap, and a restoration member. The key cap is disposed on the first electrode. The restoration member is disposed between the key cap and the first electrode. The key cap or the restoration member has a second electrode. A sensing signal is generated by the second electrode with the key cap or the restoration member moving relative to the first electrode. | 2022-06-16 |
20220189717 | CURRENT INTERRUPTER SYSTEM - A current interrupter system has a series arrangement of at least two interrupter units. At least one of the interrupter units is a vacuum tube, and the at least two interrupter units are mechanically connected to a drive system. The drive system has a drive assembly and a drive shaft. The drive shaft is a crank shaft equipped with at least two cranks. The at least two cranks have two crank strokes of different magnitudes. | 2022-06-16 |
20220189718 | BATTERY DISCONNECTION USING WATER SENSING FOR UNDERWATER BATTERY-POWERED POOL CLEANING DEVICES - Systems, devices, and methods for electrically disconnecting a battery of battery-powered swimming pool cleaners or other swimming pool equipment based on water sensing are described. An example system may include a sensing circuit to detect the presence of water, a power circuit to direct power to an electrical load, and a disabling circuit. The disabling circuit may be configured to receive a signal from the sensing circuit, and, in response, disable the power circuit from powering the electrical load. | 2022-06-16 |
20220189719 | CIRCUIT ASSEMBLY - Provided is a circuit assembly including: a main relay that is to be electrically connected between a load and a battery; a pre-charge circuit connected in parallel with the main relay; and a heat transfer member, wherein the pre-charge circuit includes current-carrying portions that are to be connected to the main relay, and the heat transfer member and the current-carrying portions are in contact with each other. | 2022-06-16 |
20220189720 | CONTACT DEVICE - A contact device includes a fixed contact, a movable contact, a housing, and an arc extinguishing member. The movable contact moves between a closed position where the movable contact contacts the fixed contact and an open position where the movable contact is separate from fixed contact. The housing houses the fixed contact and the movable contact. The arc extinguishing member is movably disposed in the housing and discharges an arc extinguishing gas. The arc extinguishing member is disposed facing a gap between the fixed contact and the movable contact when the movable contact is in the open position. | 2022-06-16 |
20220189721 | INTELLIGENT CIRCUIT BREAKERS - A circuit breaker includes an electromechanical switch, a current sensor, a voltage sensor, and a processor. The electromechanical switch is serially connected between a line input terminal and a load output terminal of the circuit breaker, and configured to be placed in a switched-closed state or a switched-open state. The current sensor is configured to sense a magnitude of current flowing in a path between the line input and load output terminals and generate a current sense signal. The voltage sensor is configured to sense a magnitude of voltage at a point on the path between the line input and load output terminals and generate a voltage sense signal. The processor is configured to receive and process the current sense signal and the voltage sense signal to determine operational status information of the circuit breaker and determine power usage information of a load connected to the load output terminal. | 2022-06-16 |
20220189722 | HIGH-VOLTAGE CIRCUIT BREAKER SYSTEM - A high-voltage circuit breaker system has a rapid disconnection function that results in an opening, closing, and reopening movement of a contact system. A circuit breaker having the contact system and a drive system that is mechanically connected to the contact system. The drive system includes a drive unit and, in addition to the drive unit, a drive shaft that is designed as a crankshaft. The crankshaft is connected to a mobile contact of the contact system via a push rod, and the cycle of opening, closing, and reopening movement of the contact system results from a unidirectional rotational movement of the crankshaft. | 2022-06-16 |
20220189723 | Mechanical Breaking and Fusing Combined Multi-Fracture Excitation Fuse - A mechanical breaking and fusing combined multi-fracture excitation fuse includes a shell, wherein a cavity is formed in the shell, and at least one conductor penetrates through the shell and penetrates through the cavity; at least one excitation device and one breaking device are arranged in the cavity of the shell; the excitation device can receive an external excitation signal to drive the breaking device to act to break a conductor corresponding thereof to form at least two fractures on the conductor, at least one fuse is connected in parallel onto the conductor. The melt is connected in parallel with at least one fracture, and the melt is connected in series with at least one fracture. | 2022-06-16 |
20220189724 | ARC EXTINCTION APPARATUS OF AIR CIRCUIT BREAKER - An arc extinction apparatus according to an embodiment of the present disclosure comprises a chamber unit, a division unit, a filter unit, and a cover unit. A discharge port is formed in the chamber unit such that a fluid in the chamber unit is discharged to the outside. An insertion groove is provided on inner faces of the chamber unit that face each other. The division unit is coupled to the inside of the chamber unit. In addition, the division unit divides a path of the fluid discharged through the discharge port into multiple paths. The filter unit is disposed in the discharge port and filters out at least one predetermined material from the fluid passing through the discharge port. The cover unit comprises a plurality of exhaust pipes and is coupled to the discharge port from the outside of the filter unit. | 2022-06-16 |
20220189725 | ELECTRON EMITTER AND METHOD OF FABRICATING SAME - Electron emitters and methods of fabricating the electron emitters are disclosed. According to certain embodiments, an electron emitter includes a tip with a planar region having a diameter in a range of approximately (0.05-10) micrometers. The electron emitter tip is configured to release field emission electrons. The electron emitter further includes a work-function-lowering material coated on the tip. | 2022-06-16 |
20220189726 | SYSTEM AND METHOD FOR ALIGNMENT OF SECONDARY BEAMS IN MULTI-BEAM INSPECTION APPARATUS - A multi-beam inspection apparatus including an adjustable beam separator is disclosed. The adjustable beam separator is configured to change a path of a secondary particle beam. The adjustable beam separator comprises a first Wien filter and a second Wien filter. Both Wien filters are aligned with a primary optical axis. The first Wien filter and the second Wien filter are independently controllable via a first excitation input and a second excitation input, respectively. The adjustable beam separator is configured move the effective bending point of the adjustable beam separator along the primary optical axis based on the first excitation input and the second excitation input. | 2022-06-16 |
20220189727 | SCANNING ION BEAM DEPOSITION AND ETCH - The present disclosure provides a method to adjust asymmetric velocity of a scan in a scanning ion beam deposition or etch process to correct asymmetry of depositing or etching between the inboard side and the outboard side of device structures on a wafer, while maintaining the overall uniformity of the respective deposition or etch across the full wafer. | 2022-06-16 |
20220189728 | ABERRATION CORRECTOR - According to one aspect of the present invention, an aberration corrector includes a first electrode substrate provided with first passage holes through which multiple electron beams pass; a second electrode substrate disposed below the first electrode substrate and provided with second passage holes through which the multiple electron beams pass, first electrodes of four or more poles being disposed individually on each top surface region of top surface regions around some second passage holes among the second passage holes; and a third electrode substrate disposed below the second electrode substrate and provided with third passage holes through which the multiple electron beams pass, second electrodes of four or more poles being disposed individually on each of top surface region of top surface regions around some third passage holes corresponding to remaining second passage holes in which the first electrodes are not disposed, among the third passage holes. | 2022-06-16 |
20220189729 | CHARGED PARTICLE BEAM DEVICE AND OPERATION METHOD THEREFOR - When adjusting optical axes of a multi-beam charged particle beam device, because parameters of optical systems are inter-dependent, the time required to adjust the parameters increases. Thus, the present invention provides a charged particle beam device provided with an optical parameter setting unit for setting parameters of optical systems for emitting a plurality of primary charged particle beams to a sample, detectors for individually detecting a plurality of secondary charged particle beams discharged from the sample, a plurality of memories for storing signals detected by the detectors and converted into digital pixels in the form of images, evaluation value derivation units for deriving evaluation values of the primary charged particle beams from the images, and a GUI capable of displaying the images and receiving an input from a user, wherein the GUI displays the images and evaluation results based on the evaluation values and changes various optical parameters in real-time. | 2022-06-16 |
20220189730 | METHOD FOR MICROSCOPIC IMAGE GENERATION AND SYSTEM FOR SAME - The present invention concerns a method and a system for imaging at least a part of a specimen by means of two microscopy imaging methods, where a surface ( | 2022-06-16 |
20220189731 | Charged Particle Beam Apparatus - A charged particle beam apparatus includes: a specimen chamber; a specimen holder that is disposed in the specimen chamber; a specimen exchange chamber that is connected to the specimen chamber; a transporting mechanism that transports a specimen between the specimen chamber and the specimen exchange chamber; a first temperature sensor that measures a temperature of the specimen holder; a second temperature sensor that measures a temperature of the transporting mechanism; and a control unit. The control unit: calculates a temperature difference between the specimen holder and the transporting mechanism based on the temperature of the specimen holder and the temperature of the transporting mechanism when the control unit has received an instruction to transport a specimen; determining whether the temperature difference is a threshold or more; and stopping transportation of a specimen when the control unit has determined that the temperature difference is the threshold or more. | 2022-06-16 |
20220189732 | SCANNING ELECTRON MICROSCOPE HAVING DETACHABLE COLUMN, AND IMAGE ACQUISITION METHOD USING THE SAME - A scanning electron microscope according to the present invention enables a column to be detached from a sample installation unit, thereby addressing issues related to the column, such as simple calibration related to the column, tilt of a beam, replacement of consumables, etc., by replacing the entire column. As such, the scanning electron microscope has the advantage of being simply and easily repaired and maintained. | 2022-06-16 |
20220189733 | THERMAL-AIDED INSPECTION BY ADVANCED CHARGE CONTROLLER MODULE IN A CHARGED PARTICLE SYSTEM - Apparatuses, systems, and methods for providing beams for controlling charges on a sample surface of charged particle beam system. In some embodiments, a module comprising a laser source configured to emit a beam. The beam may illuminate an area adjacent to a pixel on a wafer to indirectly heat the pixel to mitigate a cause of a direct photon-induced effect at the pixel. An electron beam tool configured to detect a defect in the pixel, wherein the defect is induced by the indirect heating of the pixel. | 2022-06-16 |
20220189734 | ELECTRON BEAM IRRADIATION APPARATUS AND ELECTRON BEAM IRRADIATION METHOD - According to one aspect of the present invention, an electron beam irradiation apparatus includes a photoelectric surface configured to receive irradiation of excitation light on a side of a front surface, and generate electron beams from a side of a back surface; a blanking aperture array mechanism provided with passage holes corresponding to the electron beams and configured to perform deflection control on each of the plurality of electron beams passing through the passage holes; and an adjustment mechanism configured to adjust at least one of an orbit of transmitted light that passes through at least one of arrangement objects including the photoelectric surface, the blanking aperture array mechanism, and the limit aperture substrate up to the stage and reaches the stage, among an irradiated excitation light, and an orbit of the electron beams, wherein the arrangement objects shield at least a part of the transmitted light. | 2022-06-16 |
20220189735 | METHOD AND APPARATUS FOR AN IMAGING SYSTEM - The present invention provides apparatus for an imaging system comprising a multitude of chemical emitting elements upon a substrate. In some embodiments the substrate may be approximately round with a radius of approximately one inch. Various methods relating to using and producing an imaging system of chemical emitters are disclosed. | 2022-06-16 |
20220189736 | ION IMPLANTATION APPARATUS - An ion implantation apparatus includes a transfer device that transfers a wafer, a support device that supports the wafer at an implantation position, and a control device that controls the ion implantation apparatus to perform chain implantation processing on the wafer, and that controls the transfer device or the support device according to warpage information of the wafer. | 2022-06-16 |
20220189737 | Workpiece Processing Apparatus with Plasma and Thermal Processing Systems - A processing apparatus for processing a workpiece is presented. The processing apparatus includes a processing chamber, a plasma chamber separated from the processing chamber disposed on a first side of the processing chamber, and a plasma source configured to generate a plasma in the plasma chamber. One or more radiative heat sources configured to heat the workpiece disposed on a second and opposite side of the first side of the processing chamber. A dielectric window is disposed between the workpiece support and the one or more heat sources. The processing apparatus includes a rotation system configured to rotate the workpiece, the rotation system comprising a magnetic actuator. | 2022-06-16 |
20220189738 | Method and System for Automated Frequency Tuning of Radiofrequency (RF) Signal Generator for Multi-Level RF Power Pulsing - A two-dimensional frequency search grid is defined by a first coordinate axis representing an operating frequency setpoint of an RF signal generator in a first operational state and a second coordinate axis representing an operating frequency setpoint of the RF signal generator in a second operational state. The RF signal generator has a first output power level in the first operational state and a second output power level in the second operational state. The RF signal generator operates in an multi-level RF power pulsing mode by cyclically alternating between the first operational state and the second operational state. An automated search process is performed within the two-dimensional frequency search grid to simultaneously determine an optimum value for the operating frequency setpoint of the RF signal generator in the first operational state and an optimum value for the operating frequency setpoint of the RF signal generator in the second operational state. | 2022-06-16 |
20220189739 | Variable Capacitor for RF Power Applications - A radio-frequency (RF) power variable capacitor capable of operating at, at least, 50 watts in the MHz range. The capacitor has a composite HDK-NDK ceramic dielectric. The HDK (high dielectric constant) component comprises an active matrix of barium strontium titanate, for example. Acoustic resonances are reduced or eliminated by the addition of a metal or metalloid oxide such as magnesium borate (NDK—low dielectric constant), which acts as an acoustic resonance reduction agent (ARRA) in the RF power domain. The acoustic resonances which previously occurred under bias voltage 500 V or 1100 V in prior art RF power variable capacitors are eliminated by the addition of the ARRA. | 2022-06-16 |
20220189740 | RETUNING FOR IMPEDANCE MATCHING NETWORK CONTROL - A physical vapor deposition system may include an RF generator configured to transmit an AC process signal to a physical vapor deposition chamber via an RF matching network. A controller of the RF matching network receives the DC magnitude and phase error signals and varies an impedance of the RF matching network in response to the DC magnitude and phase error signals. The matching network operates in a first mode until a tuning dead-zone is determined. Once a tuning dead-zone is determined, the matching network operates in additional modes until the network is tuned. The controller uses a composite value of magnitude and phase error to drive the variable tuning and load capacitors. In some cases, a blended mode (representing multiple tuning algorithms concurrently) may be implemented as a single mode that weights across what would have been multiple modes and thereby tunes the network using a weighted blended mode. | 2022-06-16 |
20220189741 | METHODS AND SYSTEMS FOR DEPOSITING A LAYER - Plasma-assisted methods for depositing materials and related systems are described. The methods described herein comprise ending a deposition process when a plasma characteristic matches a pre-determined criterion. | 2022-06-16 |
20220189742 | DRYING UNIT AND APPARATUS FOR PROCESSING A SUBSTRATE INCLUDING A DRYING UNIT - An apparatus for processing a substrate may include a processing module including at least one process chamber for processing a desired process on a substrate, an index module for transferring the substrate from an outside into the processing module, and a drying unit for removing a moisture or undesired gases from the at least one process chamber. The drying unit may remove the moisture or the undesired gases from components newly installed in the at least one process chamber. | 2022-06-16 |
20220189743 | MULTI-LAYER PROTECTIVE COATING - Methods and apparatus for preparing a protective coating are described. In one example aspect, an apparatus for preparing a protective coating includes a chamber, a substrate positioned within the chamber configured to hold at least a target object, an inlet pipe configured to direct a monomer vapor into the chamber, and one or more electrodes configured to perform a chemical vapor deposition process to produce a multi-layer coating. The chemical vapor deposition process comprises multiple cycles, each cycle comprising a pretreatment phase and a coating phase to produce a layer of the multi-layer coating. | 2022-06-16 |
20220189744 | BOTTOM AND MIDDLE EDGE RINGS - A middle ring configured to be arranged on a bottom ring and to support a moveable edge ring and further configured to be raised and lowered relative to a substrate support includes an upper surface that is stepped, an annular inner diameter, an annular outer diameter, a lower surface, a guide feature in the upper surface defining the annular outer diameter, an inner annular rim in the upper surface defining the annular inner diameter, and a groove defined in the upper surface between the guide feature and the inner annular rim. | 2022-06-16 |
20220189745 | BOTTOM AND MIDDLE EDGE RINGS - A bottom ring is configured to support a moveable edge ring that is configured to be raised and lowered relative to a substrate support. The bottom ring includes an upper surface that is stepped, an annular inner diameter, an annular outer diameter, a lower surface, a plurality of vertical guide channels provided through the bottom ring from the lower surface to the upper surface of the bottom ring, each of the guide channels including a first region having a smaller diameter than the guide channel and being configured to receive respective lift pins for raising and lowering the edge ring, and a guide feature extending upward from the upper surface of the bottom ring. | 2022-06-16 |
20220189746 | SEMICONDUCTOR PROCESSING EQUIPMENT INCLUDING ELECTROSTATIC CHUCK FOR PLASMA PROCESSING - Semiconductor processing equipment and an electrostatic chuck include a semiconductor having: an upper electrode; a gas supplier connected to the upper electrode; and a substrate supporting structure spaced apart from the upper electrode to define a processing volume. The substrate supporting structure supports a substrate and includes: a lower electrode having a side area disposed outside a step formed at an outer perimeter portion of the lower electrode and a processing area disposed inside the step; a first plate disposed on the lower electrode; an attraction electrode disposed on the first plate; and a second plate disposed on the attraction plate. The second plate supports the substrate in a state in which the substrate is laid on an upper surface of the second plate. Each of the first plate and the second plate includes ceramic. The lower electrode has a maximum height at a central portion of the processing area. | 2022-06-16 |
20220189747 | Workpiece Processing Apparatus with Plasma and Thermal Processing Systems - An apparatus for combining plasma processing and thermal processing of a workpiece is presented. The apparatus includes a processing chamber, a plasma chamber separated from the processing chamber disposed on a first side of the processing chamber, and a plasma source configured to generate a plasma in the plasma chamber. A quartz workpiece support is disposed within the processing chamber, the workpiece support configured to support a workpiece. One or more radiative heat sources configured to heat the workpiece are disposed on a second and opposite side of the first side of the processing chamber. A dielectric window is disposed between the workpiece support and the one or more heat sources. In addition, the apparatus includes a temperature measurement system configured to obtain a temperature measurement indicative of a temperature of the workpiece. | 2022-06-16 |
20220189748 | PLASMA PROCESSING APPARATUS - A plasma processing apparatus is provided. The plasma processing apparatus comprises: a dielectric member having a placement surface on which an object to be processed is placed and a back surface opposite to the placement surface, and having a first through-hole penetrating through the placement surface and the back surface; a mounting table having a support surface for supporting the dielectric member and a base having a second through-hole communicating with the first through-hole; and an embedded member disposed in the first through-hole and the second through-hole, wherein the embedded member includes a first embedded member disposed in the first through-hole and a second embedded member disposed in the second through-hole, and the rigidity of the second embedded member is lower than the rigidity of the first embedded member. | 2022-06-16 |
20220189749 | Process Kit Conditioning Chamber - An ex situ physical vapor deposition (PVD) process kit conditioning apparatus configured to condition process kit components of a PVD substrate processing chamber, the ex situ PVD process kit conditioning apparatus comprising a chamber assembly, a central cathode assembly configured to mount one or more targets. The apparatus is configured to receive one or more components of a process kit of a PVD substrate processing chamber and the central cathode assembly is positioned and configured so that the apparatus deposits the defect reduction coating substantially uniformly on an inner surface of a process kit component of the PVD substrate processing chamber. | 2022-06-16 |
20220189750 | Sputtering Target And Method For Manufacturing Sputtering Target - Provided is a sputtering target capable of reducing generation of particles, and a method for producing the same. The sputtering target includes: 10 mol % or more and 85 mol % or less of Co, 0 mol % or more and 47 mol % or less of Pt, and 0 mol % or more and 47 mol % or less of Cr, as metal components; and at least B | 2022-06-16 |
20220189751 | IMAGING MASS SPECTROMETER - An imaging mass spectrometer includes an analysis executing section that executes MS | 2022-06-16 |
20220189752 | IONIZATION METHOD AND MASS SPECTROMETRY METHOD - An ionization method includes: a first process of preparing a sample support body including an electrically insulating substrate having a first surface, a second surface on a side opposite to the first surface, and a plurality of through-holes opening on each of the first surface and the second surface and an electrically insulating frame attached to the substrate; a second process of mounting a sample on a mount surface of a mount portion and mounting the sample support body on the mount surface so that the second surface is in contact with the sample; and a third process of ionizing components of the sample that have moved to the first surface side via the plurality of through-holes by irradiating the first surface with charged-droplets and sucking the ionized components. | 2022-06-16 |
20220189753 | METHODS AND SYSTEMS FOR PROCESSING MASS SPECTRA - There is provided a method of identifying spurious peaks in a mass spectrum produced from a time-varying transient signal detected in a mass spectrometer. The method comprises the steps of generating, using a regularized inversion algorithm having one or more adjustable parameters, a first mass spectrum from the time-varying transient signal, according to a first set of values of said one or more adjustable parameters. Generating, using the regularized inversion algorithm, one or more perturbed mass spectra from the transient signal, according to one or more respective perturbed versions of the first set of values. Identifying one or more spurious peaks in the first mass spectrum by comparing the first mass spectrum with at least one of the perturbed mass spectra. There are also provided corresponding systems and computer readable media. | 2022-06-16 |
20220189754 | Method for Real Time Encoding of Scanning SWATH Data and Probabilistic Framework for Precursor Inference - A precursor ion transmission window is moved in overlapping steps across a precursor ion mass range. The precursor ions transmitted at each overlapping step by the mass filter are fragmented or transmitted. Intensities or counts are detected for each of the one or more resulting product ions or precursor ions for each overlapping window that form mass spectrum data for each overlapping window. Each unique product ion detected is encoded in real-time during data acquisition. This encoding includes sums of counts or intensities of each unique ion detected the overlapping windows and positions of the windows associated with each sum. The encoding for each unique ion is stored in a memory device rather than the mass spectral data. A deblurring algorithm or numerical method is used to determine a precursor ion of each unique ion from the encoded data. | 2022-06-16 |
20220189755 | MASS ANALYSIS SYSTEM, AND METHOD FOR DETERMINING PERFORMANCE OF MASS ANALYSIS DEVICE - A technique for accurately determining a performance of a single detector detecting ions having passed through ap mass analysis unit. A mass analysis system includes, a first converter configured to calculate a first measured value based on an intensity and an area of a pulse in an electric signal output from the detector configured to detect the ions having passed through the mass analysis unit, a second converter configured to obtain a second measured value by counting the number of pulses of the electric signal, a calculation unit configured to calculate an A/P ratio indicating a ratio of the first measured value to the second measured value, a determination unit configured to determine a performance of the detector based on a value of the A/P ratio, and a control unit configured to control at least an output of a determination result obtained by the determination unit. | 2022-06-16 |
20220189756 | GLYCAN MASS SPECTROMETRY DATA ANALYZER AND PROGRAM FOR ANALYZING GLYCAN MASS SPECTROMETRY DATA - In a device for analyzing mass spectrum data of a sample containing a sialic-acid-linked glycan subjected to a sialic-acid-linkage-specific derivatization or a molecule modified with the glycan, a glycan information acquisition section acquires a plurality of kinds of glycans having a core structure formed by a plurality of monosaccharide residues of a plurality of kinds, and mass information corresponding to each of those glycans, based on a glycan composition set through a glycan composition setting section. A mass-changing factor setting section allows a setting of mass-changing factors causing a mass change of a glycan. A theoretical glycan mass calculation section determines a theoretical glycan mass-to-charge ratio after the mass change of the glycan occurs, of each glycan based on the mass-changing factors, which include an ion species or salt that is possibly formed on a carboxyl group of a sialic acid in a sialic-acid-linked glycan included in the analysis target and a sialic-acid linkage type in which a mass change corresponding to the derivatization possibly occurs. A mass change calculation section estimates the mass change from the combination of the ion species or the salt and the sialic-acid linkage type. | 2022-06-16 |
20220189757 | SAMPLE SUPPORT - A sample support body is a sample support body for ionization of a sample, including: a substrate having a first surface, a second surface on a side opposite to the first surface, and a plurality of through-holes opening on each of the first surface and the second surface; and a frame attached to the substrate, in which a thermal conductivity of the frame is 1.0 W/m·K or less. | 2022-06-16 |
20220189758 | TIME-OF-FLIGHT MASS SPECTROMETER - Provided is a time-of-flight mass spectrometer including: a loop-orbit defining electrode ( | 2022-06-16 |
20220189759 | ULTRAVIOLET LIGHT-EMITTING MODULE AND DISINFECTING SYSTEM - Modules, systems and methods that disinfect surfaces using ultraviolet (UV) light are disclosed. In one aspect, a UV light-emitting module comprises an enclosure comprising a rear wall and a face plate spaced from the rear wall and comprising a light-transmitting aperture. At least one sidewall extends between the rear wall and the face plate, and at least one UV light emitter is within the enclosure. A ventilation opening is located in one or more walls selected from (1) the rear wall and (2) the at least one sidewall. | 2022-06-16 |
20220189760 | PROCESS SOLUTION FOR POLYMER PROCESSING - The present disclosure relates to a process solution for polymer processing, containing a polar aprotic solvent, a fluorine-based compound, and a sulfur-containing compound. The process solution for polymer processing may have excellent storage stability and minimize damage to the metal layer while improving an ability to remove the adhesive polymer remaining on a circuit surface of a semiconductor wafer. | 2022-06-16 |
20220189761 | Integrated Method for Low-Cost Wide Band Gap Semiconductor Device Manufacturing - A method for manufacturing a wide band gap semiconductor device using a substrate of SiC wafer is disclosed. The method includes coating the substrate with a hard mask material, performing lithography to define patterned openings in the hard mask material of the substrate, etching the substrate to form patterned trenches from the defined patterned openings, removing the hard mask using a chemical process from the substrate, cleaning the substrate with the patterned trenches, performing epitaxy on the substrate to form a uniform single crystal layer over the patterned trenches to create a plurality of micro voids, kiss polishing the substrate, performing another epitaxy on the substrate using a fast epitaxial growth process to provide an active device epitaxial layer suitable to fabricate SiC devices, and after fabrication of the SiC devices, severing the plurality of micro voids to extract the SiC devices from the substrate of the SiC wafer. | 2022-06-16 |
20220189762 | SUBSTRATE PROCESSING METHOD AND SUBSTRATE PROCESSING APPARATUS - A substrate processing method includes a processing liquid film forming step of supplying a processing liquid, containing a sublimable substance, to a pattern forming surface of a substrate, to form a processing liquid film on the pattern forming surface, a temperature maintaining step of maintaining a temperature of the processing liquid film, formed on the pattern forming surface, in a temperature range not lower than a melting point of the sublimable substance and lower than a boiling point of the sublimable substance, a film thinning step of thinning the processing liquid film while the temperature of the processing liquid film is in the temperature range, a freezing step of making the processing liquid film, thinned by the film thinning step, freeze on the pattern forming surface after the temperature maintaining step to form a frozen body of the sublimable substance, and a sublimating step of sublimating the frozen body to remove the frozen body from the pattern forming surface. | 2022-06-16 |
20220189763 | Methods of Performing Selective Low Resistivity Ru Atomic Layer Deposition and Interconnect Formed Using the Same - Provided by the inventive concept are methods for fabricating semiconductor devices, such as methods of atomic layer deposition (ALD). Aspects of the inventive concept include methods for depositing and forming Ru metal layers having low resistivity, forming Ru metal layers without the need for a post-deposition annealing step, forming Ru metal layers selectively on portions of a substrate without the need for passivation, and providing Ru metal layers for use in back end of the line (BEOL) applications in semiconductor devices that do not require a liner/barrier layer. | 2022-06-16 |
20220189764 | Radiation of Substrates During Processing and Systems Thereof - A method for processing a substrate includes performing a first etch process to form a plurality of partial features in a dielectric layer disposed over the substrate; performing an irradiation process to irradiate the substrate with ultra-violet radiation having a wavelength between 100 nm and 200 nm; and after the irradiation process, performing a second etch process to form a plurality of features from the plurality of partial features. | 2022-06-16 |
20220189765 | SUBSTRATE DRYING APPARATUS AND SEMICONDUCTOR DEVICE MANUFACTURING METHOD USING SAME - A substrate drying apparatus includes; a drying chamber configured to load a substrate and including a lower chamber and an upper chamber above the lower chamber, a supply port configured to supply a supercritical fluid into the drying chamber and including a main supply port and a sub-supply port horizontally spaced apart from the main supply port, wherein the main supply port penetrates a center portion of the upper chamber, and a first buffer member coupled to the upper chamber, vertically separated from the sub-supply port, and vertically overlapping the sub-supply port, such that supercritical fluid vertically introduced into the drying chamber through the sub-supply port is impeded by the first buffer member to change a flow direction for the supercritical fluid. | 2022-06-16 |
20220189766 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE - A semiconductor device that can be miniaturized or highly integrated is provided. The semiconductor device includes a first oxide, an insulator over the first oxide, a first conductor over the insulator, a second conductor electrically connected to the first oxide, and a second oxide provided between the first oxide and the second conductor, and the contact area between the second oxide and the second conductor is larger than the contact area between the second oxide and the first oxide. | 2022-06-16 |
20220189767 | FORMULATION FOR DEPOSITION OF SILICON DOPED HAFNIUM OXIDE AS FERROELECTRIC MATERIALS - In one aspect, the invention is formulations comprising both organoaminohafnium and organoaminosilane precursors that allows anchoring both silicon-containing fragments and hafnium-containing fragments onto a given surface having hydroxyl groups to deposit silicon doped hafnium oxide having a silicon doping level ranging from 0.5 to 8 mol %, preferably 2 to 6 mol %, most preferably 3 to 5 mol %, suitable as ferroelectric material. In another aspect, the invention is methods and systems for depositing the silicon doped hafnium oxide films using the formulations. | 2022-06-16 |
20220189768 | LARGE DIMENSION SILICON CARBIDE SINGLE CRYSTALLINE MATERIALS WITH REDUCED CRYSTALLOGRAPHIC STRESS - Silicon carbide (SiC) materials including SiC wafers and SiC boules and related methods are disclosed that provide large dimension SiC wafers with reduced crystallographic stress. Growth conditions for SiC materials include maintaining a generally convex growth surface of SiC crystals, adjusting differences in front-side to back-side thermal profiles of growing SiC crystals, supplying sufficient source flux to allow commercially viable growth rates for SiC crystals, and reducing the inclusion of contaminants or non-SiC particles in SiC source materials and corresponding SiC crystals. By forming larger dimension SiC crystals that exhibit lower crystallographic stress, overall dislocation densities that are associated with missing or additional planes of atoms may be reduced, thereby improving crystal quality and usable SiC crystal growth heights. | 2022-06-16 |
20220189769 | CRYSTAL FILM, SEMICONDUCTOR DEVICE INCLUDING CRYSTAL FILM, AND METHOD OF PRODUCING CRYSTAL FILM - There is provided a crystalline film including, a crystalline metal oxide as a major component; a corundum structure; a dislocation density of 1×10 | 2022-06-16 |
20220189770 | METHOD FOR FABRICATING SEMICONDUCTOR DEVICE - A method for fabricating a semiconductor device includes the steps of first forming a fin-shaped structure on a substrate, forming a dielectric layer surrounding the fin-shaped structure, performing an anneal process to transform the dielectric layer into a shallow trench isolation (STI), removing the fin-shaped structure to form a trench, and forming a stack structure in the trench. Preferably, the stack structure includes a first semiconductor layer on the fin-shaped structure and a second semiconductor layer on the first semiconductor layer and the first semiconductor layer and the second semiconductor layer include different materials. | 2022-06-16 |
20220189771 | UNDERLAYER FILM FOR SEMICONDUCTOR DEVICE FORMATION - A structure includes an underlayer formed on a substrate, a mandrel layer formed on the underlayer, and a spacer layer formed on the mandrel layer. The underlayer includes a first material, and the spacer layer includes a second material. The first material is resistant to etching gases used in a first etch process to remove portions of the spacer layer and a second etch process to remove the mandrel layer. | 2022-06-16 |
20220189772 | DIRECTIONAL MODIFICATION OF PATTERNING STRUCTURE TO ENHANCE PATTERN ELONGATION PROCESS MARGIN - A method for patterning structures including providing a layer stack having a plurality of device layers and a hardmask layer disposed in a stacked arrangement, the layer stack having a plurality of trenches formed therein, the trenches extending through the hardmask layer and into at least one of the device layers, the trenches having lateral sidewalls with a first slope relative to a plane perpendicular to upper surfaces of the device layers, and performing a sputter etching process wherein ion beams are directed toward the hardmask layer to etch the hardmask layer and cause etched material from the hardmask layer to be redistributed along the lateral sidewalls of the trenches to provide the lateral sidewalls with a second slope relative to the plane perpendicular to the upper surfaces of the device layers, the second slope less than the first slope. | 2022-06-16 |
20220189773 | SUBSTRATE PROCESSING METHOD AND SUBSTRATE PROCESSING APPARATUS - A substrate processing method includes an operation for holding a substrate in a horizontal position, the substrate including an amorphous silicon layer having a surface on which an altered layer derived from dry etching is formed, an operation for irradiating the altered layer with ultraviolet rays to reform the altered layer into a reformed layer, and an operation for supplying a chemical solution to the amorphous silicon layer having the reformed layer on the surface to perform wet etching on the amorphous silicon layer. This improves the efficiency of the wet etching on the amorphous silicon layer. | 2022-06-16 |
20220189774 | METHOD FOR BEOL METAL TO DIELECTRIC ADHESION - A method of promoting adhesion between a dielectric layer of a semiconductor device and a metal fill deposited within a trench in the dielectric layer, including performing an ion implantation process wherein an ion beam formed of an ionized dopant species is directed into the trench at an acute angle relative to a top surface of the dielectric layer to form an implantation layer in a sidewall of the trench, and depositing a metal fill in the trench atop an underlying bottom metal layer, wherein the metal fill adheres to the sidewall. | 2022-06-16 |
20220189775 | METHOD OF FORMING STRUCTURES FOR THRESHOLD VOLTAGE CONTROL - Methods and systems for depositing rare earth metal carbide containing layers on a surface of a substrate and structures and devices formed using the methods are disclosed. An exemplary method includes using a cyclical deposition process such as an atomic layer deposition process for depositing a rare earth metal carbide containing layer onto a surface of the substrate. | 2022-06-16 |
20220189776 | FIN FIELD-EFFECT TRANSISTOR AND METHOD OF FORMING THE SAME - A semiconductor device includes a semiconductor fin. The semiconductor device includes a metal gate disposed over the semiconductor fin. The semiconductor device includes a gate dielectric layer disposed between the semiconductor fin and the metal gate. The semiconductor device includes first spacers sandwiching the metal gate. The first spacers have a first top surface and the gate dielectric layer has a second top surface, and the first top surface and a first portion of the second top surface are coplanar with each other. The semiconductor device includes second spacers further sandwiching the first spacers. The second spacers have a third top surface above the first top surface and the second top surface. The semiconductor device includes a gate electrode disposed over the metal gate. | 2022-06-16 |
20220189777 | FILM FORMATION METHOD AND FILM FORMATION APPARATUS - A film formation method includes: providing a substrate including a first region in which a first material is exposed and a second region in which a second material different from the first material is exposed; forming a target film selectively in the first region among the first region and the second region; and removing a product produced in the second region in the forming the target film by supplying ClF | 2022-06-16 |
20220189778 | METHOD FOR FORMING FILM - A method of selectively forming a film on a substrate includes: a preparation process of preparing a substrate having a surface to which a metal film and an insulating film are exposed; a first removal process of removing a natural oxide film on the metal film; a first film forming process of forming a self-assembled monolayer, which suppresses formation of a titanium nitride film, on the insulating film by providing the substrate with a compound for forming the self-assembled monolayer, the compound having a functional group containing fluorine and carbon; a second film forming process of forming a titanium nitride film on the metal film; an oxidation process of oxidizing the surface of the substrate; and a second removal process of removing a titanium oxide film, which is formed on the metal film and the self-assembled monolayer, by providing the surface of the substrate with the compound. | 2022-06-16 |
20220189779 | SUBSTRATE PROCESSING METHOD AND SUBSTRATE PROCESSING APPARATUS - Provided are a substrate processing method and a substrate processing apparatus for forming a low-resistance metal-containing nitride film. The substrate processing method includes: a step of providing a substrate in a processing container; a step of forming a metal-containing nitride film on the substrate by repeating supplying an organic metal-containing gas and a nitrogen-containing gas alternately for a first predetermined number of cycles; a step of modifying the metal-containing nitride film by generating plasma in the processing container; and a step of repeating the step of forming the metal-containing nitride film and the step of modifying the metal-containing nitride film for a second predetermined number of cycles. | 2022-06-16 |
20220189780 | Electronic Device Including a Doped Gate Electrode and a Process of Forming the Same - A process to form a HEMT can have a gate electrode layer that initially has a plurality of spaced-apart doped regions. In an embodiment, any of the spaced-apart doped regions can be formed by depositing or implanting p-type dopant atoms. After patterning, the gate electrode can include an n-type doped region over the p-type doped region. In another embodiment a barrier layer can underlie the gate electrode and include a lower film with a higher Al content and thinner than an upper film. In a further embodiment, a silicon nitride layer can be formed over the gate electrode layer and can help to provide Si atoms for the n-type doped region and increase a Mg:H ratio within the gate electrode. The HEMT can have good turn-on characteristics, low gate leakage when in the on-state, and better time-dependent breakdown as compared to a conventional HEMT. | 2022-06-16 |
20220189781 | Non-Atomic Layer Deposition (ALD) Method of Forming Sidewall Passivation Layer During High Aspect Ratio Carbon Layer Etch - Improved process flows and methods are provided herein for forming a passivation layer on sidewall surfaces of openings formed in an amorphous carbon layer (ACL) to avoid bowing during an ACL etch process. More specifically, improved process flows and methods are provided to form a silicon-containing passivation layer on sidewall surfaces of the openings created within the ACL without utilizing atomic layer deposition (ALD) techniques or converting the silicon-containing passivation layer to an oxide or a nitride. As such, the improved process flows and methods disclosed herein may be used to protect the sidewall surfaces of the ACL and prevent bowing during the ACL etch process, while also reducing processing time and improving throughput. | 2022-06-16 |
20220189782 | SUBSTRATE PROCESSING APPARATUS AND SUBSTRATE PROCESSING METHOD - A substrate processing apparatus includes: a spin base rotatable in a horizontal plane about a centered rotary axis; a holder to hold a substrate above the spin base; a lower surface processing unit to discharge a processing liquid toward a lower surface of the substrate held by the holder. The holder includes: a plurality of first abutting members that abut the substrate from a position obliquely below said substrate and that hold the substrate in a horizontal posture in a position spaced from an upper surface of said spin base; a plurality of second abutting members that abut the substrate from a position lateral to said substrate and that hold said substrate in a horizontal posture in a position spaced from the upper surface of said spin base. A switching mechanism switches between a first holding condition state where the first abutting members hold the substrate and a second holding condition state where the second abutting members hold the substrate; wherein, in the second holding condition state, the first abutting members are spaced from the substrate, and in the first holding condition state, an upper surface of the substrate is in a position above an upper end surface of each of the first and second abutting members are spaced from the substrate. | 2022-06-16 |
20220189783 | ETCHING METHOD AND ETCHING APPARATUS - An etching method of etching Si or SiN existing on a substrate, includes: forming an oxide film on a surface of Si or SiN by performing a radical oxidation process on the substrate having Si or SiN; performing a gas-based chemical process on the oxide film; and removing reaction products produced by the gas-based chemical process, wherein the forming the oxide film, the performing the gas-based chemical process, and the removing the reaction products are repeated a plurality of times. | 2022-06-16 |
20220189784 | DEFLECTABLE PLATENS AND ASSOCIATED METHODS - A deflectable platen including a first layer formed of a material having a first coefficient of thermal expansion (CTE), and a second layer bonded to the first layer and having a second CTE, the second layer including a plurality of electrodes embedded therein for facilitating electrostatic clamping of wafers to the second layer, wherein the second CTE is different than the first CTE. | 2022-06-16 |
20220189785 | METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE AND SUBSTRATE PROCESSING APPARATUS - A method for manufacturing a semiconductor device is provided. In the method, an amorphous silicon film is deposited in a recess provided in a surface of a substrate by supplying a silicon-containing gas to the substrate. The amorphous silicon film is etched by supplying an etching gas to the substrate so as to leave the amorphous silicon film on a bottom of the recess. A silicon film is deposited on the amorphous silicon film by supplying dichlorosilane to the substrate. | 2022-06-16 |
20220189786 | TIN OXIDE AND TIN CARBIDE MATERIALS FOR SEMICONDUCTOR PATTERNING APPLICATIONS - A method and apparatus for patterning semiconductor materials using tin-based materials as mandrels, hardmasks, and liner materials are provided. One or more implementations of the present disclosure use tin-oxide and/or tin-carbide materials as hardmask materials, mandrel materials, and/or liner material during various patterning applications. Tin-oxide or tin-carbide materials are easy to strip relative to other high selectivity materials like metal oxides (e.g., TiO | 2022-06-16 |
20220189787 | MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE - A manufacturing method of a semiconductor device includes: preparing a semiconductor substrate including a first semiconductor layer made of gallium oxide containing Sn and a second semiconductor layer disposed on the first semiconductor layer and made of n type gallium oxide having a Sn concentration lower than a Sn concentration of the first semiconductor layer; implanting ions of a group 2 element into the second semiconductor layer; and forming a diffusion region, in which the group 2 element diffuses, in a range from a surface of the second semiconductor layer to an interface between the second semiconductor layer and the first semiconductor layer. | 2022-06-16 |
20220189788 | OPTICAL SENSOR PACKAGE AND METHOD OF MAKING AN OPTICAL SENSOR PACKAGE - A molded carrier is formed by a unitary body made of a laser direct structuring (LDS) material and includes a blind opening with a bottom surface. The unitary body includes: a floor body portion defining a back side and the bottom surface of the blind opening and an outer peripheral wall body portion defining a sidewall surface of the blind opening. LDS activation followed by electro-plating is used to produce: a die attach pad and bonding pad at the bottom surface; land grid array (LGA) pads at the back side; and vias extending through the floor body portion to make electrical connections between the die attach pad and one LGA pad and between the bonding pad and another LGA pad. An integrated circuit chip is mounted to the die attach pad and wire bonded to the bonding pad. A wafer-scale manufacturing process is used to form the molded carrier. | 2022-06-16 |
20220189789 | SUBSTRATE MANUFACTURING METHOD FOR REALIZING THREE-DIMENSIONAL PACKAGING - Disclosed is a substrate manufacturing method for realizing three-dimensional packaging, which includes: preparing a base plate, the base plate including a dielectric material layer, a first sidewall pad, a first through-hole pillar and a cavity, the cavity being filled with a first metal block; processing a first circuit layer and a second circuit layer, the first circuit layer including a first padding plate and a second metal block, and the second circuit layer including a second padding plate and a plurality of pin pads; processing and laminating interlayer through-hole pillars; processing a third circuit layer and a fourth circuit layer, the third circuit layer including a second sidewall pad and the fourth circuit layer including a routing circuit; and etching to expose the first sidewall pad, the second sidewall pad and the pin pads. | 2022-06-16 |
20220189790 | METHODS FOR REGISTRATION OF CIRCUIT DIES AND ELECTRICAL INTERCONNECTS - A method includes placing an electronic device on a pliable mating surface on a major surface of a mold such that at least one contact pad on the electronic device presses against the pliable mating surface. The pliable mating surface is on a microstructure in an arrangement of microstructures on the major surface of the mold. A liquid encapsulant material is applied over the electronic device and the major surface of the mold, and then hardened to form a carrier for the electronic device. The mold and the carrier are separated such that the microstructures on the mold form a corresponding arrangement of microchannels in the carrier, and at least one contact pad on the electronic device is exposed in a microchannel in the arrangement of microchannels. A conductive particle-containing liquid is deposited in the microchannel, which directly contacts the contact pad exposed in the microchannel. | 2022-06-16 |
20220189791 | METHOD FOR MANUFACTURING ELECTRONIC DEVICE - A method for manufacturing an electronic device includes at least a preparing step of preparing a structure provided with an adhesive film provided with a base material layer, an adhesive resin layer (A) provided on a first surface side of the base material layer, an adhesive resin layer (B) provided on a second surface side of the base material layer and in which an adhesive force is reduced by external stimuli, and an unevenness-absorbing resin layer (C) provided between the base material layer and the adhesive resin layer (A) or between the base material layer and the adhesive resin layer (B), an electronic component attached to the adhesive resin layer (A) of the adhesive film and having an uneven structure, and a support substrate attached to the adhesive resin layer (B) of the adhesive film; and a sealing step of sealing the electronic component with a sealing material. | 2022-06-16 |
20220189792 | APPARATUS AND METHOD FOR HANDLING WAFER CARRIER DOORS - An apparatus for handling wafer carriers in a semiconductor fabrication facility (FAB) is disclosed. In one example, the apparatus includes: a table configured to receive a wafer carrier having a first door and operable to hold a plurality of wafers; an opening mechanism configured to open the first door of the wafer carrier; and a door storage space configured to store the first door. The apparatus may be either located on a floor of the FAB or physically coupled to a ceiling of the FAB. | 2022-06-16 |
20220189793 | GAS DELIVERY SYSTEM FOR A SHARED GAS DELIVERY ARCHITECTURE - Exemplary substrate processing systems may include a lid plate. The systems may include a gas splitter seated on the lid plate. The gas splitter may define a plurality of gas inlets and gas outlets. A number of gas outlets may be greater than a number of gas inlets. The systems may include a plurality of valve blocks that are interfaced with the gas splitter. Each valve block may define a number of gas lumens. An inlet of each of the gas lumens may be in fluid communication with one of the gas outlets. An interface between the gas splitter and each of the valve blocks may include a choke. The systems may include a plurality of output manifolds seated on the lid plate. The systems may include a plurality of output weldments that may couple an outlet of one of the gas lumens with one of the output manifolds. | 2022-06-16 |
20220189794 | SYSTEMS FOR INTEGRATED DECOMPOSITION AND SCANNING OF A SEMICONDUCTING WAFER - Systems and methods are described for integrated decomposition and scanning of a semiconducting wafer, where a single chamber is utilized for decomposition and scanning of the wafer of interest. | 2022-06-16 |
20220189795 | APPARATUS FOR TREATING SUBSTRATE AND TEMPERATURE CONTROL METHOD - The inventive concept provides a temperature controlling method. The temperature controlling method for controlling a temperature of a tank storing a treating fluid transferred to the chamber, comprises supplying the treating fluid to the inner space of the tank, heating the treating fluid at the inner space, and transferring the heated treating fluid to the chamber, wherein the temperature of the inner space is controlled based on a measured pressure of the inner space. | 2022-06-16 |
20220189796 | ETCHING DEVICE AND ETCHING METHOD THEREOF - The present invention relates to an etching device and an etching method thereof, the etching device comprising: an etchant supply unit for supplying an etchant to an etching chamber; a rinsing liquid supply unit for supplying a rinsing liquid to the etching chamber; a cleaning liquid supply unit for supplying a cleaning liquid to the etching chamber; and a first pressurization maintaining unit for maintaining at least one of the etching chamber and the etchant supply unit in a pressurized atmosphere. | 2022-06-16 |
20220189797 | DEVICE FOR MANUFACTURING SEMICONDUCTOR SUBSTRATE COMPRISING TEMPERATURE GRADIENT INVERSION MEANS AND METHOD FOR MANUFACTURING SEMICONDUCTOR SUBSTRATE - Provided are a method for etching and growing a semiconductor substrate in the same device system, and a device therefor. The method for manufacturing a semiconductor substrate includes a first heating step of heating a heat treatment space which contains a semiconductor substrate and a transmission/reception body that transports atoms between the semiconductor substrate and the transmission/reception body such that a temperature gradient is formed between the semiconductor substrate and the transmission/reception body, and a second heating step of heating the same with the temperature gradient being vertically inverted. | 2022-06-16 |
20220189798 | SEMICONDUCTOR SUBSTRATE MANUFACTURING DEVICE APPLICABLE TO LARGE-DIAMETER SEMICONDUCTOR SUBSTRATE - Provided is a semiconductor substrate manufacturing device which is capable of uniformly heating the surface of a semiconductor substrate that has a relatively large diameter or major axis. The semiconductor substrate manufacturing device includes a container body for accommodating a semiconductor substrate and a heating furnace that has a heating chamber which accommodates the container body, and the heating furnace has a heating source in a direction intersecting the semiconductor substrate to be disposed inside the heating chamber. | 2022-06-16 |
20220189799 | LIGHT IRRADIATION TYPE HEAT TREATMENT METHOD AND HEAT TREATMENT APPARATUS - A silicon semiconductor wafer is transported into a chamber, and preheating of the semiconductor wafer is started in a nitrogen atmosphere by irradiation with light from halogen lamps. When the temperature of the semiconductor wafer reaches a predetermined switching temperature in the course of the preheating, oxygen gas is supplied into the chamber to change the atmosphere within the chamber from the nitrogen atmosphere to an oxygen atmosphere. Thereafter, a front surface of the semiconductor wafer is heated for an extremely short time period by flash irradiation. Oxidation is suppressed when the temperature of the semiconductor wafer is relatively low below the switching temperature, and is caused after the temperature of the semiconductor wafer becomes relatively high. As a result, a dense, thin oxide film having good properties with fewer defects at an interface with a silicon base layer is formed on the front surface of the semiconductor wafer. | 2022-06-16 |
20220189800 | PROCESSING APPARATUS - A processing apparatus includes a tape pressure bonding unit that executes pressure bonding of a tape of a tape-attached frame to a back surface of a wafer. The tape pressure bonding unit includes an upper chamber, a lower chamber, a raising-lowering mechanism that raises and lowers the upper chamber, a vacuum part that sets the upper chamber and the lower chamber to a vacuum state, and an opening-to-atmosphere part that opens the upper chamber and the lower chamber to the atmosphere. | 2022-06-16 |
20220189801 | SUBSTRATE PROCESSING APPARATUS, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, AND NON-TRANSITORY COMPUTER-READABLE RECORDING MEDIUM - There is provided a technique including a plurality of process chambers to process a substrate; a plurality of standby chambers to accommodate the substrate; a transfer chamber disposed adjacent to the plurality of standby chambers and the plurality of process chambers; a transfer robot in the transfer chamber to transfer the substrate between one of the plurality of process chambers and one of the plurality of standby chambers or between the plurality of standby chambers adjacent to each other across the transfer chamber; a temperature adjustment mechanism to adjust temperature of at least one of the plurality of standby chambers; and a controller capable of controlling the temperature adjustment mechanism to change a mode of temperature adjustment of the at least one of the plurality of standby chambers depending on a transfer path through which the substrate accommodated in the at least one of the plurality of standby chambers passes. | 2022-06-16 |
20220189802 | THERMAL DYNAMIC RESPONSE SENSING SYSTEMS FOR HEATERS - A method includes: emitting, by a controller, a stimulus at a heating surface of a heater assembly, the stimulus causing a disturbance to a predetermined temperature of the heating surface, wherein the heater assembly has the heating surface and a plurality of heating elements for heating a heating target; receiving, by a control system from the controller, stimulus information; and controlling, by the control system, the heater assembly to maintain a predetermined temperature profile on the heating surface based on the stimulus information from the controller. | 2022-06-16 |
20220189803 | SENSOR CONFIGURATION FOR PROCESS CONDITION MEASURING DEVICES - A process condition measurement apparatus is disclosed. The apparatus includes a substrate, one or more insulation portions, a first plurality of interconnect traces, a second plurality of interconnect traces, and a plurality of sensors disposed on the substrate. The second plurality of interconnect traces is disposed over the first plurality of interconnect traces and intersects at a plurality of locations to form a matrix of interconnect junctions across one or more locations of the substrate. A respective sensor is electrically coupled to a respective trace of the first and second plurality of interconnect traces. The respective sensor is individually readable by addressing the respective trace of the first and second plurality of interconnect traces. | 2022-06-16 |
20220189804 | FIXTURE AND METHOD FOR DETERMINING POSITION OF A TARGET IN A REACTION CHAMBER - A fixture includes a frame, a leveling plate, a bracket, and a laser profiler. The frame is arranged for fixation above a reaction chamber arranged to deposit a film onto a substrate. The leveling plate is supported on the frame. The bracket is supported on the leveling plate. The laser profiler is suspended from the bracket, overlays the reaction chamber, and has a field of view that extends through the leveling plate and the frame to determine position of a target within the reaction chamber. Semiconductor processing systems and methods of determining position of targets within reaction chambers in semiconductor processing systems are also described. | 2022-06-16 |
20220189805 | METHOD AND APPARATUS FOR IC UNIT SINGULATION AND SORTING - A unit sorting system comprising: a net table for receiving units and a unit lifter for depositing said units on the net table; the net table having a first and second zone; wherein the unit lifter is arranged to engage a batch of units and then deposit a first half of the batch to the first zone and deposit a first half of the batch to the second zone. | 2022-06-16 |
20220189806 | ESTIMATING HEIGHTS OF DEFECTS IN A WAFER - The present disclosure relates to a method for estimating heights of defects in a wafer. The method comprises creating an un-calibrated 3D model of a defect in a wafer, determining one or more attributes associated with the un-calibrated 3D model, transforming the un-calibrated 3D model to a calibrated 3D model, and estimating a height of the defect using the calibrated 3D model. Creating an un-calibrated 3D model corresponds to a defect present in a wafer based on a plurality of Scanning Electron Microscope (SEM) images of the defect. Transforming the un-calibrated 3D model to a calibrated 3D model uses a scaling factor corresponding to the determined one or more attributes associated with the un-calibrated 3D model. A height of the defect is estimated based on the calibrated 3D model of the defect. | 2022-06-16 |
20220189807 | STORAGE SYSTEM - A storage system includes an overhead stocker having a first overhead track, a rack including a plurality of storages arranged vertically, and a crane that travels along the first overhead track and delivers and receives an article to and from the storages; and an overhead transport vehicle system having a second overhead track provided below a lower end of the overhead stocker, and an overhead transport vehicle that travels along the second overhead track and delivers and receives an article to and from a predetermined transfer destination, wherein the first overhead track has an elevating track capable of supporting and lowering the crane that is stopped traveling at a portion deviated from the second overhead track in planar view. | 2022-06-16 |
20220189808 | METHOD AND APPARATUS FOR CONTINUOUS SUBSTRATE CASSETTE LOADING - A method and apparatus for loading substrates in an inspection station is disclosed herein. In one embodiment a loading module is disclosed that includes a loading station for two or more substrate cassettes, a first lane comprising a first conveyor that is substantially aligned with one of the two or more substrate cassettes and a conveyor system, a second lane comprising a second conveyor that is substantially aligned with another of the two or more substrate cassettes and positioned in a spaced-apart relation relative to the first lane, and a lateral transfer module positioned between the first lane and the second lane that is adapted to move substrates from the second lane to the first lane. | 2022-06-16 |
20220189809 | BATCH PROCESSING OVEN AND OPERATING METHODS - A batch processing oven comprising a processing chamber and a rack configured to be positioned in the processing chamber. The rack is configured to support a plurality of substrates and a plurality of panels in a stacked manner such that one or more substrates of the plurality of substrates are positioned between at least one pair of adjacent panels of the plurality panels. Vertical gaps separate each substrate of the one or more substrates from an adjacent substrate or panel on either side of the substrate. | 2022-06-16 |