25th week of 2014 patent applcation highlights part 18 |
Patent application number | Title | Published |
20140166954 | COMPACT PORTABLE LIFTING APPARATUS - A lifting apparatus operable to lift an object is provided. The lifting apparatus may include a base having a receiving recess and an actuatable cylinder movable between a collapsed configuration and a fully extended configuration to lift the object during a lifting operation. The actuable cylinder and the base may include, in some embodiments, recesses mounted therein to improve a stroke length to overall length ratio of the lifting apparatus. | 2014-06-19 |
20140166955 | Collapsible safety rail system - A collapsible safety rail system for providing a portable or permanent protective barrier to provide for fall prevention from elevated or other work areas. Lockable pivot assemblies are located between heavy bases and the end posts of collapsible safety rail assemblies. Removable detent pins are utilized to lock the pivot assemblies to maintain the erected position of the collapsible safety rail assemblies in protective vertical orientation or are removed to allow maneuvering of the collapsible safety rail assemblies to a minimum viewable profile position when not required for personnel protection. | 2014-06-19 |
20140166956 | Using saturated and unsaturated ALD processes to deposit oxides as ReRAM switching layer - A nonvolatile memory device contains a resistive switching memory element with improved device switching performance and lifetime by custom tailoring the average concentration of defects in the resistive switching film and methods of forming the same. The nonvolatile memory element includes a first electrode layer, a second electrode layer, and a resistive switching layer disposed between the first electrode layer and the second electrode layer. The resistive switching layer comprises a first sub-layer and a second sub-layer, wherein the first sub-layer has more defects than the first sub-layer. A method includes forming a first sub-layer on the first electrode layer by a first ALD process and forming a second sub-layer on the first sub-layer by a second ALD process, where the first sub-layer has a different amount of defects than the second sub-layer. | 2014-06-19 |
20140166957 | HYBRID CIRCUIT OF NITRIDE-BASED TRANSISTOR AND MEMRISTOR - A hybrid circuit comprises a nitride-based transistor portion and a memristor portion. The transistor includes a source and a drain and a gate for controlling conductance of a channel region between the source and the drain. The memristor includes a first electrode and a second electrode separated by an active switching region. The source or drain of the transistor forms one of the electrodes of the memristor. | 2014-06-19 |
20140166958 | Controlling ReRam Forming Voltage with Doping - An internal electrical field in a resistive memory element can be formed to reduce the forming voltage. The internal electric field can be formed by incorporating one or more charged layers within the switching dielectric layer of the resistive memory element. The charged layers can include adjacent charge layers to form dipole layers. The charged layers can be formed at or near the interface of the switching dielectric layer with an electrode layer. Further, the charged layer can be oriented with lower valence substitution side towards lower work function electrode, and higher valence substitution side towards higher work function electrode. | 2014-06-19 |
20140166959 | CARBON BASED NONVOLATILE CROSS POINT MEMORY INCORPORATING CARBON BASED DIODE SELECT DEVICES AND MOSFET SELECT DEVICES FOR MEMORY AND LOGIC APPLICATIONS - The present disclosure is directed toward carbon based diodes, carbon based resistive change memory elements, resistive change memory having resistive change memory elements and carbon based diodes, methods of making carbon based diodes, methods of making resistive change memory elements having carbon based diodes, and methods of making resistive change memory having resistive change memory elements having carbons based diodes. The carbon based diodes can be any suitable type of diode that can be formed using carbon allotropes, such as semiconducting single wall carbon nanotubes (s-SWCNT), semiconducting Buckminsterfullerenes (such as C60 Buckyballs), or semiconducting graphitic layers (layered graphene). The carbon based diodes can be pn junction diodes, Schottky diodes, other any other type of diode formed using a carbon allotrope. The carbon based diodes can be placed at any level of integration in a three dimensional (3D) electronic device such as integrated with components or wiring layers. | 2014-06-19 |
20140166960 | IL-Free MIM stack for clean RRAM Devices - A nonvolatile memory device that contains a resistive switching memory element with improved device switching performance and lifetime, and methods of forming the same. A nonvolatile memory element includes a first electrode layer formed on a substrate, a resistive switching layer formed on the first electrode layer, and a second electrode layer. The resistive switching layer comprises a metal oxide and is disposed between the first electrode layer and the second electrode layer. The elemental metal selected for each of the first and second electrode layers is the same metal as selected to form the metal oxide resistive switching layer. The use of common metal materials within the memory element eliminates the growth of unwanted and incompatible native oxide interfacial layers that create undesirable circuit impedance. | 2014-06-19 |
20140166961 | RESISTIVE RANDOM ACCESS MEMORY (RRAM) AND METHOD OF MAKING - The present disclosure provides a resistive random access memory (RRAM) cells and methods of making the same. The RRAM cell includes a transistor and an RRAM structure electrically connected to the transistor. The RRAM structure includes a bottom electrode having a via portion and a top portion, a resistive material layer over the bottom electrode and having a same width as the top portion of the bottom electrode, and a top electrode over the resistive material layer and having a smaller width than the resistive material layer. | 2014-06-19 |
20140166962 | PHASE CHANGE MEMORY CELL WITH LARGE ELECTRODE CONTACT AREA - A phase change memory cell and a method for fabricating the phase change memory cell. The phase change memory cell includes a bottom electrode and a first non-conductive layer. The first non-conductive layer defines a first well, a first electrically conductive liner lines the first well, and the first well is filled with a phase change material in the phase change memory cell. | 2014-06-19 |
20140166963 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME - Disclosed is a semiconductor device having a substrate including first and second regions. First interlayer insulation layers and conductive patterns alternately are stacked on a first region of the substrate. A second interlayer insulation layer covers the first interlayer insulation layers and the conductive patterns. A resistor is formed in the second interlayer insulation layer in the second region of the substrate. | 2014-06-19 |
20140166964 | PHASE-CHANGE MEMORY DEVICE AND FABRICATION METHOD THEREOF - A phase-change memory device and a method of fabricating the same are provided. The phase-change memory device includes a semiconductor substrate in which a word line is arranged, a diode line disposed over the word line and extending parallel to the word line, a phase-change line pattern disposed over the diode line, and a projection disposed between the diode line and the phase-change line pattern and protruding from the diode line. The diode line and the projection are formed of a single layer to be in continuity with each other. | 2014-06-19 |
20140166965 | RESISTIVE MEMORY DEVICE AND FABRICATION METHOD THEREOF - A resistive memory device may include a bottom structure, a memory cell structure disposed on the bottom structure, and a data storage material disposed to surround an outer sidewall of the memory cell structure. | 2014-06-19 |
20140166966 | Resistance Change Element and Method for Producing the Same - To provide a resistance change element which does not require a forming process and enables reduction of power consumption and miniaturization of the element, and to provide a method for producing it. A resistance change element | 2014-06-19 |
20140166967 | SMALL FOOTPRINT PHASE CHANGE MEMORY CELL - An example embodiment disclosed is a phase change memory cell in a semiconductor wafer. The semiconductor wafer includes a first metalization layer (Metal 1). The phase change memory cell includes an insulating substrate defining a non-sublithographic via. The non-sublithographic via is located on the first metalization layer and includes a bottom and a sidewall. Intermediate insulating material is positioned below the insulating substrate. The intermediate insulating material defines a sublithographic aperture passing through the bottom of the non-sublithographic via. A bottom electrode is positioned within the sublithographic aperture, and is composed of conductive non-phase change material. The non-sublithographic via includes phase change material positioned within. The phase change material is electrically coupled to the bottom electrode. A liner is positioned along the sidewall of the non-sublithographic via. The liner is electrically coupled to the phase change material and is composed of the conductive non-phase change material. | 2014-06-19 |
20140166968 | NONVOLATILE MEMORY CELL COMPRISING A DIODE AND A RESISTANCE-SWITCHING MATERIAL - A nonvolatile memory cell is provided that includes a diode and a reversible resistance-switching element that includes a resistance-switching metal oxide or nitride, the metal oxide or nitride including only one metal. Numerous other aspects are provided. | 2014-06-19 |
20140166969 | NONVOLATILE MEMORY DEVICE USING A TUNNEL OXIDE AS A PASSIVE CURRENT STEERING ELEMENT - Embodiments of the invention generally include a method of forming a nonvolatile memory device that contains a resistive switching memory element that has improved device switching performance and lifetime, due to the addition of a current limiting component disposed therein. The electrical properties of the current limiting component are configured to lower the current flow through the variable resistance layer during the logic state programming steps by adding a fixed series resistance in the resistive switching memory element of the nonvolatile memory device. In one embodiment, the current limiting component comprises a tunnel oxide that is a current limiting material disposed within a resistive switching memory element in a nonvolatile resistive switching memory device. Typically, resistive switching memory elements may be formed as part of a high-capacity nonvolatile memory integrated circuit, which can be used in various electronic devices, such as digital cameras, mobile telephones, handheld computers, and music players. | 2014-06-19 |
20140166970 | PHASE CHANGE MEMORY CELL - A phase change memory cell includes a first contact, a phase change region above and in contact with the first contact, an electrode region, and a second contact above and in contact with the electrode region. The phase change region surrounds the electrode region. The electrode region has a first surface in contact with the phase change region and a second surface in contact with the second contact, and the second surface is wider than the first surface. | 2014-06-19 |
20140166971 | VARIABLE RESISTANCE MEMORY DEVICE AND METHOD OF MANUFACTURING THE SAME - A variable resistance memory device includes a semiconductor substrate having a vertical transistor with a shunt gate that increases an area of a gate of the vertical transistor. | 2014-06-19 |
20140166972 | METHODS OF SELF-ALIGNED GROWTH OF CHALCOGENIDE MEMORY ACCESS DEVICE - Self-aligning fabrication methods for forming memory access devices comprising a doped chalcogenide material. The methods may be used for forming three-dimensionally stacked cross point memory arrays. The method includes forming an insulating material over a first conductive electrode, patterning the insulating material to form vias that expose portions of the first conductive electrode, forming a memory access device within the vias of the insulating material and forming a memory element over the memory access device, wherein data stored in the memory element is accessible via the memory access device. The memory access device is formed of a doped chalcogenide material and formed using a self-aligned fabrication method. | 2014-06-19 |
20140166973 | COMPOSITION HAVING DISPERSION OF NANO-PARTICLES THEREIN AND METHODS OF FABRICATING SAME - Compositions having a dispersion of nano-particles therein and methods of fabricating compositions having a dispersion of nano-particles therein are described. In an example, a method of forming a composition having a dispersion of nano-particles therein includes forming a mixture of semiconductor nano-particles and discrete prepolymer molecules. A polymer matrix is formed from the discrete prepolymer molecules. The polymer matrix includes a dispersion of the semiconductor nano-particles therein. In another example, a composition includes a medium including discrete prepolymer molecules. The medium is a liquid at 25 degrees Celsius. A plurality of semiconductor nano-particles is suspended in the medium. | 2014-06-19 |
20140166974 | NANO-STRUCTURED LIGHT-EMITTING DEVICES - A nano-structured light-emitting device includes a plurality of light-emitting nanostructures each having a resistant layer disposed thereon. The device includes a first semiconductor layer of a first conductivity type, and a plurality of nanostructures disposed on the first semiconductor layer. Each nanostructure includes a nanocore, and an active layer and a second semiconductor layer of a second conductivity type that enclose surfaces of the nanocores. An electrode layer encloses and covers the plurality of nanostructures A plurality of resistant layers are disposed on the electrode layer and each corresponds to a respective nanostructure of the plurality of nanostructures. | 2014-06-19 |
20140166975 | SEMICONDUCTOR LIGHT EMITTING DEVICE - A semiconductor light emitting device includes a substrate structure; a semiconductor layer disposed on the substrate structure, the semiconductor layer including a light emitting layer; and an electrode formed on a surface of the semiconductor layer, wherein a relatively coarse uneven portion and a relatively fine uneven portion are formed by a frost process on a surface of the semiconductor layer at a side of the electrode. | 2014-06-19 |
20140166976 | HIGH EFFICIENCY LIGHT EMITTING DIODE - Exemplary embodiments of the present invention provide a high efficiency light emitting diode including a semiconductor stack including a first-type compound semiconductor layer, an active layer, and a second-type compound semiconductor layer, a first electrode disposed on the semiconductor stack, and a graphene-metamaterial laminate structure disposed between the first electrode and the semiconductor stack. | 2014-06-19 |
20140166977 | Deep Ultraviolet Light Emitting Diode - A carbon doped short period superlattice is provided. A heterostructure includes a short period superlattice comprising a plurality of quantum wells alternating with a plurality of barriers. One or more of the quantum wells and/or the barriers includes a carbon doped layer (e.g., a non-percolated or percolated carbon atomic plane). | 2014-06-19 |
20140166978 | SEMICONDUCTOR LIGHT EMITTING DEVICE - According to one embodiment, a semiconductor light emitting device includes an n-type semiconductor layer, a p-type semiconductor layer, and a light emitting part. The n-type semiconductor layer includes a nitride semiconductor. The p-type semiconductor layer includes a nitride semiconductor. The light emitting part is provided between the n-type and the p-type semiconductor layers and includes an n-side barrier layer and a first light emitting layer. The first light emitting layer includes a first barrier layer, a first well layer, and a first AIGaN layer. The first barrier layer is provided between the n-side barrier layer and the p-type semiconductor layer. The first well layer contacts the n-side barrier layer between the n-side and the first barrier layer. The first AIGaN layer is provided between the first well layer and the first barrier layer. A peak wavelength λp of light emitted from the light emitting part is longer than 515 nanometers. | 2014-06-19 |
20140166979 | Light-Emitting Diode with Textured Substrate - A light-emitting diode (LED) device is provided. The LED device has raised semiconductor regions formed on a substrate. LED structures are formed over the raised semiconductor regions such that bottom contact layers and active layers of the LED device are conformal layers. The top contact layer has a planar surface. In an embodiment, the top contact layers are continuous over a plurality of the raised semiconductor regions while the bottom contact layers and the active layers are discontinuous between adjacent raised semiconductor regions. | 2014-06-19 |
20140166980 | SEMICONDUCTOR LIGHT EMITTING ELEMENT - A semiconductor light emitting element includes an n-side semiconductor layer, an active layer, and a p-side semiconductor layer stacked in this order on a substrate. The active layer includes a multiple quantum well structure which includes a plurality of barrier layers and a plurality of well layers adjacent to the barrier layers. Among the barrier layers, a final barrier layer disposed closest to the p-side semiconductor layer and one or more barrier layers adjacent to the final barrier layer via the well layers respectively has a greater thickness than a thickness of a barrier layer on a side close to the n-side semiconductor layer. | 2014-06-19 |
20140166981 | VERTICAL NANOWIRE TRANSISTOR WITH AXIALLY ENGINEERED SEMICONDUCTOR AND GATE METALLIZATION - Vertically oriented nanowire transistors including semiconductor layers or gate electrodes having compositions that vary over a length of the transistor. In embodiments, transistor channel regions are compositionally graded, or layered along a length of the channel to induce strain, and/or include a high mobility injection layer. In embodiments, a gate electrode stack including a plurality of gate electrode materials is deposited to modulate the gate electrode work function along the gate length. | 2014-06-19 |
20140166982 | ACCURATE CONTROL OF DISTANCE BETWEEN SUSPENDED SEMICONDUCTOR NANOWIRES AND SUBSTRATE SURFACE - A method of forming a semiconductor device is provided. The method includes providing a structure including, a handle substrate, a buried boron nitride layer located above an uppermost surface of the handle substrate, a buried oxide layer located on an uppermost surface of the buried boron nitride layer, and a top semiconductor layer located on an uppermost surface of the buried oxide layer. Next, a first semiconductor pad, a second semiconductor pad and a plurality of semiconductor nanowires connecting the first semiconductor pad and the second semiconductor pad in a ladder-like configuration are patterned into the top semiconductor layer. The semiconductor nanowires are suspended by removing a portion of the buried oxide layer from beneath each semiconductor nanowire, wherein a portion of the uppermost surface of the buried boron nitride layer is exposed. Next, a gate all-around field effect transistor is formed. | 2014-06-19 |
20140166983 | ACCURATE CONTROL OF DISTANCE BETWEEN SUSPENDED SEMICONDUCTOR NANOWIRES AND SUBSTRATE SURFACE - A method of forming a semiconductor device is provided. The method includes providing a structure including, a handle substrate, a buried boron nitride layer located above an uppermost surface of the handle substrate, a buried oxide layer located on an uppermost surface of the buried boron nitride layer, and a top semiconductor layer located on an uppermost surface of the buried oxide layer. Next, a first semiconductor pad, a second semiconductor pad and a plurality of semiconductor nanowires connecting the first semiconductor pad and the second semiconductor pad in a ladder-like configuration are patterned into the top semiconductor layer. The semiconductor nanowires are suspended by removing a portion of the buried oxide layer from beneath each semiconductor nanowire, wherein a portion of the uppermost surface of the buried boron nitride layer is exposed. Next, a gate all-around field effect transistor is formed. | 2014-06-19 |
20140166984 | Graphene Resonant Tunneling Transistor - A graphene device having a ribbon structure with soft boundaries formed between two thin parallel transport barriers in a “railroad track” configuration. Such a structure permits transport along the ribbon, and also permits transport of electrons across the barriers by means of resonant tunneling through quasi-bound states within the railroad track confinement. The transport barriers can be of any form of so long as transport through the barriers leads to the formation of isolated resonant bands with a transport gap. In some embodiments, the transport barriers can be in the form of a pair of parallel line defects, wherein the line defects delineate the central ribbon section and the two lateral sections. In some such embodiments, the line defects are chemically decorated by the adsorption of diatomic gases. In other embodiments, the transport barriers can be formed by the application of large local potentials directly to the graphene sheet. | 2014-06-19 |
20140166985 | RECTIFYING DEVICE, TRANSISTOR, AND RECTIFYING METHOD - A rectifying device includes: a one-dimensional channel ( | 2014-06-19 |
20140166986 | SYSTEM AND METHOD FOR MATCHING ELECTRODE RESISTANCES IN OLED LIGHT PANELS - Provided are an OLED device and a method of manufacturing the OLED device that may provide improved luminance uniformity. The disclosed OLED may have a first electrode that has a first sheet resistance Rs, and a second electrode that has a second sheet resistance, wherein the second sheet resistance may be in the range of 0.3Rs-1.3Rs. In addition, the disclosed OLED may have a plurality of equal potential difference between points on a first electrode and a second electrode. The equal potential difference may be provided by a gradient resistance formed on at least one of the electrodes. | 2014-06-19 |
20140166987 | Disordered Organic Electronic Materials Based on Non-Benzenoid 1,6-Methano[10]Annulene Rings - Conjugated polymers and small molecules including the nonplanar aromatic 1,6-methano[10]annulene ring structure along with aromatic subunits, such as diketopyrrolopyrrole, and 2,1,3-benzothiadiazole, substituted with alkyl chains in a “Tail In,” “Tail Out,” or “No Tail” regiochemistry are disclosed. | 2014-06-19 |
20140166988 | ORGANIC COMPOUND AND ORGANIC ELECTROLUMINESCENT DEVICE USING THE SAME - The present invention discloses a novel organic compound is represented by the following formula(I), the organic EL device employing the organic compound as host material or dopant material of emitting layer and/or as electron transporting material can lower driving voltage, prolong half-lifetime and increase the efficiency. | 2014-06-19 |
20140166989 | MANUFACTURING FLEXIBLE ORGANIC ELECTRONIC DEVICES - A method of forming microelectronic systems on a flexible substrate includes depositing (typically sequentially) on a first side of the flexible substrate at least one organic thin film layer, at least one electrode and at least one thin film encapsulation layer over the at least one organic thin film layer and the at least one electrode, wherein depositing the at least one organic thin film layer, depositing the at least one electrode and depositing the at least one thin film encapsulation layer each occur under vacuum and wherein no physical contact of the at least one organic thin film layer or the at least one electrode with another solid material occurs prior to depositing the at least one thin film encapsulation layer. | 2014-06-19 |
20140166990 | MANUFACTURING FLEXIBLE ORGANIC ELECTRONIC DEVICES - A method of forming microelectronic systems on a flexible substrate includes depositing a plurality of layers on one side of the flexible substrate. Each of the plurality of layers is deposited from one of a plurality of sources. A vertical projection of a perimeter of each one of the plurality of sources does not intersect the flexible substrate. The flexible substrate is in motion during the depositing the plurality of layers via a roll to roll feed and retrieval system. | 2014-06-19 |
20140166991 | TRANSPARENT LIGHT-EMITTING DISPLAY - A transparent light emitting display is described. A display has a transparent substrate, a plurality of light emitting elements on the substrate, and transparent wires on the substrate to provide an electrical connection to each light emitting element. | 2014-06-19 |
20140166992 | SYSTEM AND METHOD FOR A FLEXIBLE DISPLAY ENCAPSULATION - Provided is an OLED device that is rollable and has a rollable protective covering to protect the OLED when rolled. The rollable protective covering may include a single layer barrier and a plastic lid. The single layer barrier may provide permeation protection to the OLED in the OLED device. The protective covering provides mechanical protection to the OLED device when rolled. The protective covering and the OLED may be fabricated separately and assembled afterwards. | 2014-06-19 |
20140166993 | ORGANIC LIGHT EMITTING DIODE - Disclosed is an organic light emitting diode (OLED), including a flexible substrate having a surface with a bulge and groove structure. The OLED also includes a first electrode on the flexible substrate, an organic light emitting layer on the first electrode, and a second electrode on the organic light emitting layer. The flexible substrate includes polyimide. | 2014-06-19 |
20140166994 | AMOLED DISPLAY PANEL AND AMOLED DISPLAY DEVICE - An Active Matrix Organic Light Emitting Diode (AMOLED) display panel is disclosed. The display panel includes first and second substrates, and a glass frit layer bonding the first and the second substrates in an edge encapsulation area of the AMOLED display panel. The second substrate includes an electrode overlapped with the glass frit layer, and the electrode is connected to a heat conduction component. | 2014-06-19 |
20140166995 | ORGANIC LIGHT EMITTING DIODE DISPLAY DEVICE - An organic light emitting diode display device is disclosed. The organic light emitting diode display device includes an organic light emitting diode array formed on a flexible substrate, a cover film formed to cover the organic light emitting diode array, and a bottom film attached to a lower surface of the flexible substrate. Reliability of the organic light emitting diode display device may be improved by forming a cover film attached to the organic light emitting diode array and a bottom film attached to the lower surface of the flexible substrate on which the organic light emitting diode array is formed using the same material, and forming a moisture absorbent on the bottom film. | 2014-06-19 |
20140166996 | ORGANIC LIGHT-EMITTING DISPLAY APPARATUS AND METHOD OF MANUFACTURING THE SAME - An organic light-emitting display apparatus includes: a substrate; a display part on the substrate and configured to display an image, the display part including a thin-film transistor (TFT) and an organic light-emitting diode (OLED); and a pad electrode on the substrate and outside the display part, and the pad electrode includes an embossed-shaped conductive reflective layer. | 2014-06-19 |
20140166997 | ORGANIC LIGHT-EMITTING DISPLAY APPARATUS - An organic light-emitting display apparatus that has reduced resonance effect includes a thin film transistor (TFT) layer including a plurality of TFTs, first protective layer covering the TFT, a color filter disposed in at least a partial area of the region in the first protective layer, a first overcoat covering the color filter, a second protective layer covering the first overcoat, a second overcoat disposed on the second protective layer, and a pixel electrode disposed on top of the second overcoat and electrically coupled to the TFTs in the TFT layer. | 2014-06-19 |
20140166998 | ORGANIC LIGHT EMITTING DIODE DISPLAY DEVICE HAVING BUILT-IN TOUCH PANEL AND METHOD OF MANUFACTURING THE SAME - An organic light emitting diode (OLED) display device having a built-in touch panel and a manufacturing method thereof in which an OLED array and a touch array are formed on a flexible substrate and thus the OLED display device has flexibility, and a flexible printed circuit board for driving the touch array is integrally formed with a printed circuit board for driving the OLED array and thus manufacturing costs are reduced are disclosed. The OLED display device includes an OLED array formed on a lower flexible substrate, a touch array formed on an upper flexible substrate, and an adhesive layer adhering the upper flexible substrate to the lower flexible substrate such that the touch array and the OLED array face each other. | 2014-06-19 |
20140166999 | DISPLAY DEVICE AND METHOD FOR FABRICATING THE SAME - In some aspects, a display device comprising a substrate, an organic film positioned on the substrate, an inorganic film positioned on the organic film and having at least one hole for exposing at least a part of the organic film, a first electrode positioned on the inorganic film, a second electrode positioned on the first electrode, an emission layer positioned between the first electrode and the second electrode to emit light by the first electrode and the second electrode, and an organic pattern positioned on the organic film that is exposed by the hole is provided. | 2014-06-19 |
20140167000 | ORGANIC LIGHT EMITTING DISPLAY DEVICES AND METHODS OF FABRICATING THE SAME - An organic light emitting display device includes a thin film transistor on a substrate, a first protection layer covering the thin film transistor, a conductive organic layer on the first protection layer and coupled to the thin film transistor, and an organic light emitting device on the conductive organic layer and coupled to the conductive organic layer. | 2014-06-19 |
20140167001 | BLUE PHOSPHORESCENCE COMPOUND AND ORGANIC LIGHT EMITTING DIODE COMPRISING THE SAME - A blue phosphorescence compound is disclosed. The blue phosphorescence compound represented by Chemical Formula 1 below. | 2014-06-19 |
20140167002 | ORGANIC SMALL MOLECULE SEMICONDUCTING CHROMOPHORES FOR USE IN ORGANIC ELECTRONIC DEVICES - Small organic molecule semi-conducting chromophores containing a pyridalthiadiazole, pyridaloxadiazole, or pyridaltriazole core structure are disclosed. Such compounds can be used in organic heterojunction devices, such as organic small molecule solar cells and transistors. | 2014-06-19 |
20140167003 | ORGANIC ELECTROLUMINESCENCE DEVICE - Problem to Be Solved: | 2014-06-19 |
20140167004 | MOTHER PANEL FOR DISPLAY PANEL AND METHOD OF MANUFACTURING DISPLAY PANEL USING THE MOTHER PANEL - A mother panel for a display panel includes a first mother substrate and a second mother substrate that are spaced apart from each other to face each other, each of which includes at least one usable area that is usable as the display panel, and at least one unusable area that surrounds the usable area. The mother panel also includes a plurality of display panel patterns between the first mother substrate and the second mother substrate that are spaced apart from one another in the usable area, a seal pattern that adheres the first mother substrate with the second mother substrate and seals each of the plurality of display panel patterns, and an etching stopping unit that prevents an etchant from permeating between the first mother substrate and the second mother substrate and prevents a boundary area of an etching target surface from being etched. | 2014-06-19 |
20140167005 | ORGANIC LIGHT EMITTING DISPLAY - An organic light emitting display includes a thin film transistor substrate, and an organic light emitting device on the thin film transistor substrate, the organic light emitting device including a first electrode on the thin film transistor substrate, the first electrode being configured to reflect light, an organic layer on the first electrode and including at least an emitting layer, a transflective second electrode on the organic layer, and a color filter between the first electrode and the transflective second electrode. | 2014-06-19 |
20140167006 | FLEXIBLE SUBSTRATE FOR ROLL-TO-ROLL PROCESSING AND METHOD OF MANUFACTURING THE SAME - In a flexible substrate for roll-to-roll processing having improved thermal, mechanical, and chemical stabilities, a method of manufacturing the same, and an organic light emitting display apparatus including the same, the flexible substrate for roll-to-roll processing includes a base film formed of an organic material and an inorganic mesh pattern formed of inorganic material. The base film includes a first surface and a second surface opposite to the first surface, the first surface comprising first trenches extending in a first direction and second trenches extending in a second direction. The inorganic mesh pattern buries the first trenches and the second trenches. | 2014-06-19 |
20140167007 | PYRENE-BASED COMPOUND AND ORGANIC LIGHT-EMITTING DIODE INCLUDING THE SAME - A pyrene-based compound and an organic light-emitting diode including the pyrene-based compound are provided. | 2014-06-19 |
20140167008 | Organic Light Emitting Diode Display Device and Method of Fabricating the Same - An organic light emitting diode display device comprises: first and second substrates facing and spaced apart from each other; a gate line and a data line on the first substrate, the gate line and the data line crossing each other to define a plurality of pixel regions; at least one thin film transistor coupled to the gate line and the data line; a light emitting diode coupled to the at least one thin film transistor, the light emitting diode including a first electrode, an emitting layer and a second electrode; and a passivation layer on the light emitting diode, the passivation layer having a smaller area than the second electrode. | 2014-06-19 |
20140167009 | ORGANIC LIGHT-EMITTING DIODE DISPLAY DEVICE - The present invention discloses an organic light-emitting diode display device. More particularly, the present invention relates to the structure of an organic light-emitting diode display device for suppressing a vertical crosstalk phenomenon in the organic light-emitting diode display device having an internal compensation structure for threshold voltage variations in driving transistors. According to an embodiment of the present invention, a shield electrode may be formed using the same metal layer as that of scan lines or data lines, thereby providing an organic light-emitting diode display device in which the effect of coupling between the gate electrode of driving thin-film transistors and the data lines is minimized. | 2014-06-19 |
20140167010 | ORGANIC LIGHT EMITTING DIODE DISPLAY - An organic light emitting diode display includes a display panel including a display area to which a touch screen panel is attached and a pad area in which a metal wire is formed; a cover window on one side of the display panel; a resin layer between the display panel and the cover window; and a touch screen circuit film in the pad area and connected to the touch screen panel, at least one of the touch screen circuit film and the metal wire including an ultraviolet ray transmitter configured to increase a hardening degree of the resin layer in the pad area. | 2014-06-19 |
20140167011 | PIXEL STRUCTURE, DISPLAY PANEL AND DISPLAY APPARATUS - The embodiment of the present invention provides a pixel structure, pixel unit structure, display panel and display apparatus, which is used to increase the electrical-optical efficiency of the display apparatus. The pixel structure includes an active matrix driving circuit, also includes at least two light emitting devices connected in series which are connected to the active matrix driving circuit, the light emitting devices compose the light emitting device group, and the active matrix driving circuit drives the light emitting devices to emit light. | 2014-06-19 |
20140167012 | ORGANIC LIGHT-EMITTING DIODE DEVICE, METHOD FOR PACKAGING THE SAME AND DISPLAY DEVICE - The present invention provided an OLED device, a method for packaging the same, and a display device. With the solution of the present invention, it is not necessary to dispose a recess in the package substrate and the cost of production and thickness of the package substrate are decreased. The OLED device comprises a package substrate and an array substrate a surface of which is formed thereon with an OLED structure. Edges of the array substrate and the package substrate are bonded by a frame sealant, and the OLED structure is positioned between the array substrate and the package substrate. The OLED device further comprises a moisture barrier layer on a surface of the OLED structure for block moisture and oxygen and a desiccant layer positioned between the moisture layer and the package substrate, the desiccant layer including desiccant particles for absorbing moisture and oxygen within the OLED device. | 2014-06-19 |
20140167013 | ORGANIC LIGHT EMITTING DIODE DISPLAY AND METHOD FOR FABRICATING THE SAME - Disclosed are an organic light emitting diode display device and a method for fabricating the same. The OLED display device includes first and second electrodes formed on a substrate, a red light-emitting layer, a green light-emitting layer and a blue light-emitting layer formed between the first and second electrodes, a hole transport layer formed between each of the red light-emitting layer, the green light-emitting layer and the blue light-emitting layer, and the first electrode, an electron transport layer formed between each of the red light-emitting layer, the green light-emitting layer and the blue light-emitting layer, and the second electrode, and a conducting polymer formed between the substrate and the first electrode, the conducting polymer having different thicknesses in regions respectively corresponding to the red light-emitting layer, the green light-emitting layer and the blue light-emitting layer. | 2014-06-19 |
20140167014 | LIGHT-EMITTING DEVICES COMPRISING EMISSIVE LAYER - Light-emitting devices comprising an fluorescent emissive layer, and three different phosphorescent emissive layers are described herein. | 2014-06-19 |
20140167015 | ORGANIC LIGHT EMITTING DISPLAY DEVICE - An organic light emitting display device includes a first electrode formed on a substrate and being a reflective electrode, a second electrode facing the first electrode and being a semi-transparent electrode, and red, green and blue emission layers formed between the first and second electrodes, wherein a maximum electroluminescent peak of the redemission layer and a maximum photoluminescence peak of a host included in the red emission layer satisfy Equation 1 below: | 2014-06-19 |
20140167016 | WHITE ORGANIC LIGHT EMITTING DEVICE - A white organic light emitting device includes: first and second electrodes formed to face each other on a substrate; a first stack configured with a hole injection layer, a first hole transportation layer, a first light emission layer and a first electron transportation layer which are stacked between the first and second electrodes; a second stack configured with a second hole transportation layer, a second light emission layer, a third light emission layer, a second electron transportation layer and an electron injection layer which are stacked between the first stack and the second electrode; and a charge generation layer interposed between the first and second stacks and configured to adjust a charge balance between the two stacks. | 2014-06-19 |
20140167017 | ORGANIC LIGHT-EMITTING DIODE MANUFACTURING METHOD, ORGANIC LIGHT-EMITTING DIODE, IMAGE DISPLAY DEVICE, ILLUMINATION DEVICE, AND SUBSTRATE - A method of manufacturing an organic light-emitting diode including preparing, by a dry etching method using a particle single layer film as an etching mask, a substrate provided with an uneven structure in which a plurality of unevenness is arranged in two dimensions on the surface of the substrate, and stacking, on the uneven structure, at least an anode conductive layer, an EL layer including a light-emitting layer containing an organic light-emitting material, and a cathode conductive layer containing a metal layer, such that the uneven structure is reproduced on the surface of the metal layer on the side of the EL layer, wherein the particle single layer film is formed using a mixture of a plurality of particles having different particle sizes, and an uneven structure is provided which satisfies particular requirements. | 2014-06-19 |
20140167018 | ORGANIC ELECTROLUMINESCENCE DISPLAY PANEL AND METHOD OF MANUFACTURING THEREOF - An organic EL display panel has a transistor array substrate, an inter-layer insulation film, pixel electrodes, an organic EL layer, and a common electrode. The transistor array substrate has drive units, including TFT elements. The inter-layer insulation film covers the transistor array substrate, and has contact holes corresponding to the drive units. The pixel electrodes on the inter-layer insulation film correspond to the drive units, and are electrically connected thereto via the contact holes. The organic EL layer covers regions where the pixel electrodes are and are not disposed. The common electrode covers the entire organic EL layer. Organic EL layer regions corresponding to the contact holes of the inter-layer insulation film and between neighbouring pixel electrodes have greater electrical resistance than other regions. | 2014-06-19 |
20140167019 | LIGHT-EMITTING COMPONENT AND METHOD FOR PRODUCING A LIGHT-EMITTING COMPONENT - A light-emitting component may include: an electrically active region, including: a first electrode; a second electrode; and an organic functional layer structure between the first electrode and the second electrode; and a thermotropic layer, which is arranged outside the electrically active region. | 2014-06-19 |
20140167020 | Passive Matrix Organic Light Emitting Diodes - A passive matrix OLED display comprises an array of individually addressable OLED pixels arranged in column and row lines in an imaging area of the display, wherein at least one OLED pixel comprises at least one rectifying component connected in series with an electroluminescent diode, and wherein the at least one OLED pixel has an extended pixel on-time compared with a similar pixel lacking the at least one rectifying component. | 2014-06-19 |
20140167021 | ORGANIC EL ELEMENT SEALING MEMBER - The present invention provides a sealing member for organic EL elements that enables organic EL elements, in particular, organic EL elements for illumination devices to maintain stable luminescence over a long period and that can be fabricated at reduced cost. The sealing member for organic EL elements of the present invention includes a barrier film including a plastic film and at least one thin metal layer, and a curable resin composition layer on the barrier film. The curable resin composition layer has a thickness of 5 to 100 μm and the curable resin composition exhibits nonfluidity at 25° C. in an uncured state and gains fluidity at an elevated temperature in the range of 40 to 80° C. | 2014-06-19 |
20140167022 | ORGANIC LIGHT EMITTING DIODES AND METHODS OF MANUFACTURING THE SAME - The inventive concept provides organic light emitting diodes and methods of manufacturing an organic light emitting diode. The organic light emitting diode includes a substrate, a first electrode layer and a second electrode layer formed on the substrate, an organic light emitting layer disposed between the first electrode layer and the second electrode layer and generating light, and a scattering layer between the first electrode layer and the substrate or between the first electrode layer and the organic light emitting layer. The scattering layer scatters the light. | 2014-06-19 |
20140167023 | OLED DEVICE IN CONTACT WITH A CONDUCTOR - Disclosed is a method for contacting a device with a conductor | 2014-06-19 |
20140167024 | DISPLAY APPARATUS - Provided is a display apparatus and a method of manufacture. The display apparatus includes a first substrate with a plurality of organic electroluminescence devices, a second substrate with a color filter, the second substrate facing the first substrate, and an adhesive layer disposed between the first substrate and the second substrate so as to cover the plurality of organic electroluminescence devices, the adhesive layer being made of a material selected from the group consisting of a phenol resin, a melanin resin, an unsaturated polyester resin, an epoxy resin, a silicon resin and a polyurethane resin. | 2014-06-19 |
20140167025 | Organic Light Emitting Element and Display Device Using the Element - A hole transporting region made of a hole transporting material, an electron transporting region made of an electron transporting material, and a mixed region (light emitting region) in which both the hole transporting material and the electron transporting material are mixed and which is doped with a triplet light emitting material for red color are provided in an organic compound film, whereby interfaces between respective layers which exist in a conventional lamination structure are eliminated, and respective functions of hole transportation, electron transportation, and light emission are exhibited. In accordance with the above-mentioned method, the organic light emitting element for red color can be obtained in which power consumption is low and a life thereof is long. Thus, the display device and the electric device are manufactured by using the organic light emitting element. | 2014-06-19 |
20140167026 | NITROGENATED AROMATIC HETEROCYCLIC DERIVATIVE, AND ORGANIC ELECTROLUMINESCENT ELEMENT USING SAME - A nitrogen-containing aromatic heterocyclic derivative in which a nitrogen atom of an indenocarbazole skeleton optionally having a hetero atom or an indenoindole skeleton optionally having a hetero atom is bonded to a dibenzofuran or a dibenzothiophene directly or indirectly. The derivative realizes an organic EL device with a high emission efficiency and a long lifetime. | 2014-06-19 |
20140167027 | SINGLET HARVESTING WITH DUAL-CORE COPPER (I) COMPLEXES FOR OPTOELECTRONIC DEVICES - The invention relates to dimeric copper(I) complexes according to formula A, in particular as emitters in optoelectronic devices such as organic light emitting diodes (OLEDs) and other devices | 2014-06-19 |
20140167028 | AMINOINDOLO[3,2,1-jk]CARBAZOLE COMPOUND AND ORGANIC LIGHT-EMITTING DEVICE INCLUDING THE SAME - The present invention provides a novel aminoindolo[3,2,1-jk]carbazole compound having a good film-forming property and provides an organic light-emitting device including the compound. | 2014-06-19 |
20140167029 | SCATTERING FILM FOR ORGANIC EL AND ORGANIC EL LIGHT EMITTING DEVICE USING SAME - There is provided a scattering film that can be used in organic EL light emitting devices and that not only improves efficiency for light utilization and improves viewing angle dependency, which have conventionally been problems, but also can solve the problem of reflection when lights-off. This scattering film for organic EL is used in organic EL light emitting devices. The scattering film comprises a scattering layer that includes a binder resin and particles having a refractive index different from the binder resin. The average particle size of the particles is 10 μm or less, and the coefficient of variation of the average particle size for the particles is 30% or greater. | 2014-06-19 |
20140167030 | VERTICAL TYPE SEMICONDUCTOR DEVICE AND FABRICATION METHOD THEREOF - A vertical memory device and a method of fabricating the same are provided. The vertical type semiconductor device includes a common source region formed in a cell area of a semiconductor substrate. A channel region is formed on the common source region. The channel region has a predetermined height and a first diameter. A drain region is formed on the channel region. The drain region has a predetermined height and a second diameter larger than the first diameter. A first gate electrode surrounding the channel region. | 2014-06-19 |
20140167031 | METHOD FOR FABRICATING ARRAY SUBSTRATE, ARRAY SUBSTRATE AND DISPLAY DEVICE - A method for fabricating array substrate, an array substrate and a display device. The method for fabricating the array substrate comprises forming a thin film transistor, a first transparent electrode ( | 2014-06-19 |
20140167032 | LIQUID CRYSTAL DISPLAY AND MANUFACTURING METHOD THEREOF - A liquid crystal display includes: an insulation substrate, a gate line disposed on the insulation substrate, a first field generating electrode disposed on the insulation substrate, a gate insulating layer disposed on the gate line and the first field generating electrode, a semiconductor disposed on the gate insulating layer and a data line disposed on the gate insulating layer. A value [N—H]/[Si—H] of the gate insulating layer is in a range of about 13 to about 25. Here, the value [N—H]/[Si—H] means a ratio of a bonding number [N—H] of nitrogen and hydrogen to a bonding number [Si—H] of silicon and hydrogen according to an analysis of an FT-IR spectrometer. | 2014-06-19 |
20140167033 | OXIDE SINTERED BODY AND SPUTTERING TARGET - An oxide sintered body includes indium oxide and gallium solid-solved therein, the oxide sintered body having an atomic ratio “Ga/(Ga+In)” of 0.001 to 0.12, containing indium and gallium in an amount of 80 atom % or more based on total metal atoms, and having an In | 2014-06-19 |
20140167034 | DISPLAY DEVICE, ARRAY SUBSTRATE AND MANUFACTURING METHOD THEREOF - A display device, an array substrate and a manufacturing method thereof are provided. The array substrate comprises a substrate, a gate electrode on the substrate, a gate insulating layer, an active layer, an etch stop layer, a source/drain electrode layer, a passivation layer and a pixel electrode layer; wherein the active layer is a metal oxide semiconductor, a metal oxide insulating layer is provided between the gate insulating layer and the active layer, the gate insulating layer is located between the gate electrode and the metal oxide insulating layer, and the metal oxide insulating layer is located between the gate insulating layer and the active layer. | 2014-06-19 |
20140167035 | Array Substrate and Method for Manufacturing The Same, and Display Device - The present invention provides an array substrate and a method for manufacturing the same, and a display device. In the method for manufacturing the array substrate, a one-time patterning process is employed to form a channel region, a source electrode and a drain electrode of the array substrate. Specifically, a channel region, a source region and a drain region that are consisted of a metal oxide layer are formed via a one-time patterning process, and a heat treatment is carried out on the metal oxide layer of the source region and the drain region in hydrogen gas, thereby forming a conducting source electrode and a conducting drain electrode, respectively. By the technical solution of the invention, the manufacturing process of the array substrate can be simplified, and the manufacturing cost of the array substrate can be lowered. | 2014-06-19 |
20140167036 | THIN FILM TRANSISTOR AND FABRICATION METHOD THEREOF, ARRAY SUBSTRATE, AND DISPLAY DEVICE - The present invention discloses a thin film transistor (TFT), an array substrate, and fabrication methods thereof, and a display device. The TFT includes a gate, an oxide active layer, a source, and a drain formed on a substrate, wherein a source and drain transition layer is provided between the oxide active layer and the source, the drain. One patterning process is reduced and one mask process is saved through forming the source and drain transition layer between the oxide active layer and the source, the drain, thus effectively simplifying the fabrication procedure. At the same time, the additionally provided source and drain transition layer may prevent the oxide active layer from being corroded during etching, also effectively reduce threshold voltage (V | 2014-06-19 |
20140167037 | MEMORY DEVICE, SEMICONDUCTOR DEVICE, AND ELECTRONIC DEVICE - An object is to provide a memory device which does not need a complex manufacturing process and whose power consumption can be suppressed, and a semiconductor device including the memory device. A solution is to provide a capacitor which holds data and a switching element which controls storing and releasing charge in the capacitor in a memory element. In the memory element, a phase-inversion element such as an inverter or a clocked inverter includes the phase of an input signal is inverted and the signal is output. For the switching element, a transistor including an oxide semiconductor in a channel formation region is used. In the case where application of a power supply voltage to the phase-inversion element is stopped, the data is stored in the capacitor, so that the data is held in the capacitor even when the application of the power supply voltage to the phase-inversion element is stopped. | 2014-06-19 |
20140167038 | THIN FILM TRANSISTOR, THIN FILM TRANSISTOR ARRAY PANEL, AND MANUFACTURING METHOD OF THIN FILM TRANSISTOR - The inventive concept relates to a thin film transistor and a thin film transistor array panel and, in detail, relates to a thin film transistor including an oxide semiconductor. A thin film transistor according to an exemplary embodiment of the inventive concept includes: a gate electrode; a gate insulating layer positioned on or under the gate electrode; a first semiconductor and a second semiconductor that overlap the gate electrode with the gate insulating layer interposed therebetween, the first semiconductor and the second semiconductor contacting each other; a source electrode connected to the second semiconductor; and a drain electrode connected to the second semiconductor and facing the source electrode, wherein the second semiconductor includes gallium (Ga) that is not included in the first semiconductor, and a content of gallium (Ga) in the second semiconductor is greater than 0 at. % and less than or equal to about 33 at. %. | 2014-06-19 |
20140167039 | SEMICONDUCTOR DEVICE - An object is to provide a semiconductor device using an oxide semiconductor having stable electric characteristics and high reliability. A transistor including the oxide semiconductor film in which a top surface portion of the oxide semiconductor film is provided with a metal oxide film containing a constituent similar to that of the oxide semiconductor film and functioning as a channel protective film is provided. In addition, the oxide semiconductor film used for an active layer of the transistor is an oxide semiconductor film highly purified to be electrically i-type (intrinsic) by heat treatment in which impurities such as hydrogen, moisture, a hydroxyl group, or a hydride are removed from the oxide semiconductor and oxygen which is a major constituent of the oxide semiconductor and is reduced concurrently with a step of removing impurities is supplied. | 2014-06-19 |
20140167040 | THIN FILM TRANSISTOR, THIN FILM TRANSISTOR ARRAY PANEL INCLUDING THE SAME, AND METHOD OF MANUFACTURING THE SAME - A thin film transistor according to an exemplary embodiment of the present invention includes an oxide semiconductor. A source electrode and a drain electrode face each other. The source electrode and the drain electrode are positioned at two opposite sides, respectively, of the oxide semiconductor. A low conductive region is positioned between the source electrode or the drain electrode and the oxide semiconductor. An insulating layer is positioned on the oxide semiconductor and the low conductive region. A gate electrode is positioned on the insulating layer. The insulating layer covers the oxide semiconductor and the low conductive region. A carrier concentration of the low conductive region is lower than a carrier concentration of the source electrode or the drain electrode. | 2014-06-19 |
20140167041 | SEMICONDUCTOR DEVICE - An objet of the present invention is to provide a semiconductor device with a new structure. Disclosed is a semiconductor device including a first transistor which includes a channel formation region on a substrate containing a semiconductor material, impurity regions formed with the channel formation region interposed therebetween, a first gate insulating layer over the channel formation region, a first gate electrode over the first gate insulating layer, and a first source electrode and a first drain electrode which are electrically connected to the impurity region; and a second transistor which includes a second gate electrode over the substrate containing a semiconductor material, a second gate insulating layer over the second gate electrode, an oxide semiconductor layer over the second gate insulating layer, and a second source electrode and a second drain electrode which are electrically connected to the oxide semiconductor layer. | 2014-06-19 |
20140167042 | MEMRISTORS HAVING MIXED OXIDE PHASES - A memristor includes a first electrode; a second electrode; and a switching layer interposed between the first electrode and the second electrode, wherein the switching layer includes an electrically semiconducting or nominally insulating and weak ionic switching mixed metal oxide phase for forming at least one switching channel in the switching layer. A method of forming the memristor is also provided. | 2014-06-19 |
20140167043 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING A SEMICONDUCTOR DEVICE - A semiconductor device includes a semiconductor substrate including a main surface with a polygonal geometry and a main electric circuit manufactured within a main region on the semiconductor substrate. The main electric circuit is operable to perform an electric main function. The main region extends over the main surface of the semiconductor substrate leaving open at least one corner area at a corner of the polygonal geometry of the main surface of the semiconductor substrate. The corner area extends at least 300 μm along the edges of the semiconductor substrate beginning at the corner. | 2014-06-19 |
20140167044 | Semiconductor Device and Method for Manufacturing a Semiconductor Device - A semiconductor device includes a semiconductor substrate including a main surface with a polygonal geometry and a main electric circuit manufactured within a main region on the semiconductor substrate. The main electric circuit is operable to perform an electric main function. The main region extends over the main surface of the semiconductor substrate leaving open at least one corner area at a corner of the polygonal geometry of the main surface of the semiconductor substrate. The corner area extends at least 300 μm along the edges of the semiconductor substrate beginning at the corner. | 2014-06-19 |
20140167045 | TEST PATTERN FOR TRENCH POLY OVER-ETCHED STEP AND FORMATION METHOD THEREOF - A test pattern for testing a trench POLY over-etched step is provided. The test pattern is a trench ( | 2014-06-19 |
20140167046 | PIXELATED IMAGER WITH MOTFET AND PROCESS - A method of fabricating a pixelated imager includes providing a substrate with bottom contact layer and sensing element blanket layers on the contact layer. The blanket layers are separated into an array of sensing elements by trenches isolating adjacent sensing elements. A sensing element electrode is formed adjacent each sensing element overlying a trench and defining a TFT. A layer of metal oxide semiconductor (MOS) material is formed on a dielectric layer overlying the electrodes and on an exposed upper surface of the blanket layers defining the sensing element adjacent each TFT. A layer of metal is deposited on each TFT and separated into source/drain electrodes on opposite sides of the sensing element electrode. The metal forming one of the S/D electrodes contacts the MOS material overlying the exposed surface of the semiconductor layer, whereby each sensing element in the array is electrically connected to the adjacent TFT by the MOS material. | 2014-06-19 |
20140167047 | METAL OXIDE TFT WITH IMPROVED TEMPERATURE STABILITY - A metal oxide thin film transistor includes a metal oxide semiconductor channel with the metal oxide semiconductor having a conduction band with a first energy level. The transistor further includes a layer of passivation material covering at least a portion of the metal oxide semiconductor channel. The passivation material has a conduction band with a second energy level equal to, or less than 0.5 eV above the first energy level. | 2014-06-19 |
20140167048 | VERTICAL THIN FILM TRANSISTOR AND FABRICATING METHOD THEREOF - A vertical thin film transistor includes a substrate, a first wall, a second wall, a source electrode, a drain electrode, a semiconductor layer, a gate insulating layer, and a gate electrode. The first wall and the second walls are spaced apart from each other on the substrate. The source electrode is formed on a top surface of the first wall. The drain electrode is provided on the substrate between the first and second walls. The semiconductor layer is formed on the source electrode, a sidewall of the first wall, and the drain electrode. The gate insulating layer covers the first and second walls, the source and drain electrodes, and the semiconductor layer. The gate electrode is disposed between the first and second walls in a planar view. The vertical thin film transistor may be formed without a mask. | 2014-06-19 |
20140167049 | METHOD OF MANUFACTURING SUBSTRATE HAVING THIN FILM THEREABOVE, METHOD OF MANUFACTURING THIN-FILM-DEVICE SUBSTRATE, THIN-FILM SUBSTRATE, AND THIN-FILM-DEVICE SUBSTRATE - A method of manufacturing a substrate having a thin film thereabove includes: forming a thin film above the substrate; and crystallizing at least a predetermined area of the silicon thin film into a crystallized area through relative scan of the silicon thin film which is performed while the thin film is being irradiated with a continuous wave light beam, wherein in the crystallizing, a projection of the light beam on the thin film has a major axis in a direction crossing a direction of the relative scan, and the formed crystallized area includes a strip-shaped first area extending in the direction crossing the direction of the relative scan and a second area adjacent to the strip-shaped first area, the strip-shaped first area including crystal grains having an average grain size larger than that of crystal grains in the second area. | 2014-06-19 |
20140167050 | SUBSTRATE FOR DISPLAY DEVICE, DISPLAY DEVICE INCLUDING THE SUBSTRATE, AND METHOD OF MANUFACTURING THE DISPLAY DEVICE - A substrate for a display device is disclosed. In one aspect, the substrate includes an active layer that is formed on substantially the entire portion of the bottom substrate and comprises a first area and a second area with a higher carrier concentration than the first area. The substrate also includes a line overlapping with the first area and a contact electrode that electrically connects the line to the second area of the active layer. | 2014-06-19 |
20140167051 | ARRAY SUBSTRATE, METHOD FOR MANUFACTURING THE SAME, AND DISPLAY APPARATUS - Disclosed is a method for manufacturing an array substrate, comprising: step A, sequentially forming patterns of a first conduction layer, source and drain electrodes, an active layer, and an insulation layer on one side of the substrate, wherein at least one via hole is provided on the insulation layer; step B, sequentially forming a gate metal layer and a passivation layer on the substrate on which the first conduction layer, the source and drain electrodes, the active layer, and the insulation layer have been formed, wherein the gate metal layer comprises a gate electrode and a gate line, and the gate metal layer is coupled to the first conduction layer through the at least one via hole to form a path for dispersing static electricity. | 2014-06-19 |
20140167052 | ARRAY SUBSTRATE FOR NARROW BEZEL TYPE LIQUID CRYSTAL DISPLAY DEVICE AND METHOD OF MANUFACTURING THE SAME - An array substrate for a liquid crystal display device and method of manufacturing the same are provided. The array substrate includes: a plurality of paired gate lines at a first distance from each other at a boundary between adjacent first regions on a substrate, including a display area including a plurality of first regions, each including two adjacent pixel regions, a gate insulating layer on the gate lines and including a gate contact hole exposing each of the gate lines, a plurality of data lines crossing the paired gate lines, the first regions located at each crossing, an auxiliary gate line parallel with the data lines and at a boundary between the two adjacent two pixel regions, and a thin film transistor in each of the pixel regions and connected to corresponding gate and data lines, wherein the auxiliary gate line contacts the corresponding gate line through the hole. | 2014-06-19 |
20140167053 | DISPLAY DEVICE AND MANUFACTURING METHOD THEREOF - According to one embodiment, a display device includes a first substrate including a first insulative substrate, an outer peripheral wiring formed above the first insulative substrate, an insulation film disposed on the outer peripheral wiring, a pixel electrode formed on the insulation film in an active area for displaying an image, and a first bank formed in a line shape on the insulation film in a peripheral area surrounding the active area, a second substrate including at least a second insulative substrate, and a sealant which is provided in a manner to envelop the first bank, and which attaches the first substrate and the second substrate. | 2014-06-19 |