25th week of 2019 patent applcation highlights part 64 |
Patent application number | Title | Published |
20190189355 | MULTILAYER CERAMIC CAPACITOR - A multilayer ceramic capacitor includes a laminated body and first and second external electrodes respectively on both end surfaces of the laminated body. When regions where first internal electrodes or second internal electrodes are not present are regarded as side margin portions in a cross section of the laminated body as viewed from the laminating direction, the side margin portions include multiple side margin layers, and the content of Si in the side margin layer closest to the internal electrode is lower than that in the side margin layer other than the side margin layer closest to the internal electrode. | 2019-06-20 |
20190189356 | MULTILAYER CERAMIC CAPACITOR - A multilayer ceramic capacitor includes a laminated body and first and second external electrodes respectively on both end surfaces of the laminated body. When regions where first internal electrodes or second internal electrodes are not present are regarded as side margin portions in a cross section of the laminated body as viewed from the laminating direction, the side margin portions include multiple side margin layers, and the content of Si in the side margin layer closest to the internal electrode is lower than that in the side margin layer other than the side margin layer closest to the internal electrode. | 2019-06-20 |
20190189357 | Methods of Incorporating Leaker Devices into Capacitor Configurations to Reduce Cell Disturb - Some embodiments include an apparatus having horizontally-spaced bottom electrodes supported by a supporting structure. Leaker device material is directly against the bottom electrodes. Insulative material is over the bottom electrodes, and upper electrodes are over the insulative material. Plate material extends across the upper electrodes and couples the upper electrodes to one another. The plate material is directly against the leaker device material. The leaker device material electrically couples the bottom electrodes to the plate material, and may be configured to discharge at least a portion of excess charge from the bottom electrodes to the plate material. Some embodiments include methods of forming apparatuses which include capacitors having bottom electrodes and top electrodes, with the top electrodes being electrically coupled to one another through a conductive plate. Leaker devices are formed to electrically couple the bottom electrodes to the conductive plate. | 2019-06-20 |
20190189358 | FLEXIBLE ELECTRODE AND SENSOR ELEMENT - Provided are: a flexible electrode in which an increase in resistance change rate caused by repeated stretch is reduced; a sensor element comprising the flexible electrode; and a strain sensor, a pressure sensor, and a temperature sensor each comprising the sensor element, wherein the flexible electrode comprises: an insulating flexible substrate; and an electrode film comprising a fibrous carbon nanohorn aggregate and being laminated on the flexible substrate. | 2019-06-20 |
20190189359 | PRINTABLE CONDUCTIVE COMPOSITE SLURRY, CAPACITOR AND METHOD FOR MANUFACTURING CAPACITOR - A printable conductive composite slurry, a capacitor using the same and a method for manufacturing the capacitor are provided. The method includes forming a conductive polymer layer on a cathode portion of a capacitor element and printing a conductive composite slurry onto the conductive polymer layer to at least cover a portion of the conductive polymer layer that is disposed on an outer edge of the cathode portion. The printable conductive composite slurry includes a conductive material and a solvent, and has a solid content of at least 4%, a pH value ranging from 2 to 8 and a viscosity higher than 500 poise. | 2019-06-20 |
20190189360 | ELECTRICAL JUNCTION BOX - An electrical junction box includes: a connector housing that is to be fitted to a mating connector housing; a terminal held by a terminal holding portion provided in the connector housing; a first board connected to an end portion on an extension portion side of the terminal, the extension portion extending from the terminal holding portion toward a direction opposite to a fitting direction; a second board facing the first board; and a heat-generating component installed on the second board in the vicinity of the extension portion. | 2019-06-20 |
20190189361 | SOLID ELECTROLYTE CAPACITOR AND METHOD FOR MANUFACTURING SAME - A method for manufacturing a solid electrolyte capacitor, the method including: preparing a connection body including a frame and a plurality of capacitor elements, the frame including a plurality of element connection units and a coupling portion that integrally couples the plurality of element connection units with each other, the plurality of element connection units being provided along a first direction and a second direction intersecting with first direction the plurality of capacitor elements being connected to the plurality of element connection units; sealing the plurality of capacitor elements by using a sealing resin having a stripe shape that extends in the first direction; forming a groove in the sealing resin by running a blade along the second direction between the capacitor elements adjacent in the first direction; and segmenting the plurality of capacitor elements by cutting the sealing resin along a bottom surface of the groove by laser and cutting a boundary between each of the plurality of element connection units and the coupling portion by laser. | 2019-06-20 |
20190189362 | PHOTOELECTRIC CONVERSION ELEMENT, SOLAR CELL, METHOD FOR MANUFACTURING PHOTOELECTRIC CONVERSION ELEMENT, AND SURFACE TREATING AGENT FOR PEROVSKITE-TYPE CRYSTAL FILM - Provided is a photoelectric conversion element in which a photosensitive layer is composed of a light absorbing agent containing a perovskite compound, the element including a protective layer that includes a compound having a molecular weight of 5000 or less which is represented by Formula (A), on a surface of the photosensitive layer; a method for manufacturing this photoelectric conversion element; and a solar cell which is formed of this photoelectric conversion element. | 2019-06-20 |
20190189363 | METHOD FOR FABRICATING A LAYER OF MATERIAL IN AN ORGANIC ELECTRONIC STRUCTURE, AN ORGANIC ELECTRONIC STRUCTURE AND A PEROVSKITE PRECURSOR INK FOR USE IN FABRICATING THE SAME - A method for fabricating a layer of material in an organic electronic structure, an organic electronic structure and a perovskite precursor ink for use in fabricating the same. The method includes the steps of: reducing moisture and oxygen content on a surface of a substrate; depositing the material contained in a solution on the surface of the substrate; and facilitating crystallization of the material contained in the solution applied on the surface so as to form the layer of material. | 2019-06-20 |
20190189364 | HIGH-TEMPERATURE SUPERCAPACITORS CONTAINING SURFACE ACTIVE IONIC LIQUIDS - Disclosed are capacitors containing surface active ionic liquids, and methods of use. The capacitors have high capacitance and function over broad ranges of temperature, and are particularly appropriate for high-temperature (˜200° C.) applications. | 2019-06-20 |
20190189365 | ELECTRICAL SWITCHES AND SENSORS - Embodiments of the present invention relate to an electrical switch or sensor. In one embodiment, the electrical switch or sensor comprises a first electrical pole conductively coupled to a first side of a layer of variable resistance material. A second electrical pole is conductively coupled to a second side of the variable resistance material. The first side of the variable resistance material positioned distal to the second side of the variable resistance material. The variable resistance material comprises a polymer comprising a glass transition temperature of no higher than about 10° C. The first electrical pole and/or the second electrical pole comprise an electrically conductive ink or coating having a dispersion of graphene sheets. The graphene sheets completely comprise fully exfoliated single sheets of graphene. The graphene sheets comprise a lattice having heteroatoms incorporated therein and/or functional groups attached thereto. | 2019-06-20 |
20190189366 | ELECTRICAL SWITCHING DEVICE WITH REMOVABLE RECHARGING MODULE - The invention relates to an electrical switch device comprising contacts which are mobile through actuation of a first rotation shaft ( | 2019-06-20 |
20190189367 | Device and Method for Switching Medium and/or High Voltages With a Specific Drive Characteristic - A device for switching medium and/or high voltages has a spring-loaded drive for driving a kinematic chain. At least one energy storage spring and at least one damping element for generating a drive movement with specific drive characteristics are included. The at least one damping element is an active damping element. The damping is actively determined during switching or it is predetermined, in particular depending on environmental variables and/or the type of switching situation, by changing the settings of the at least one damping element. | 2019-06-20 |
20190189368 | Knob with Display Function - A knob with a display function includes a chassis with a knob ring and a rotary sensor. A display screen, a control circuit board, a reset device and a functional connection board are sequentially installed onto the chassis. A circuit board bracket is installed between the display screen and the control circuit board. The functional connection board has a confirm button, a connection terminal disposed on the back of the functional connection board. The reset device has a through hole for extending the confirm button to the outside, an end abutting and connecting the control circuit board and the other end abutting and connecting the functional connection board. This invention has the features of simple structure and reasonable design and selects a function by turning the knob ring. With the reset device, the application of the invention has high reliability and provides easy identification. | 2019-06-20 |
20190189369 | CONTACT UNIT AND METHOD - The invention relates to a contact unit and to a method for steering electric arcs on a contact unit, in particular for supplying vehicles with power via an overhead wire ( | 2019-06-20 |
20190189370 | ELECTRIC POWER TOOL - An electric power tool has a tool housing, and a trigger switch fixed inside the tool housing. The tool housing internally has a trigger switch fixing unit configured to fix the trigger switch. The trigger switch fixing unit is provided with a vibration damping elastic body interposed between the trigger switch fixing unit and the trigger switch. | 2019-06-20 |
20190189371 | SWITCH DEVICE STRUCTURE - A switch device structure provides an ensuring system to improve the shortcoming of the conventional switch device. The switch device structure includes a main body and an operation button assembled with the main body. The main body defines a chamber in which a base seat is assembled. An operation body and a wire connection module are disposed on the base seat. The base seat is formed with a cavity in which an elastic unit is mounted. The elastic unit includes a fixed section and a free section. In response to the move of the operation body and with the fixed section serving as a fulcrum, the free section of the elastic unit can push a second contact of the wire connection module into contact with a first contact to close the circuit or away from the first contact to open the circuit. | 2019-06-20 |
20190189372 | KEYPAD DEVICE WITH ROCKER BUTTON MECHANISM - A keypad device includes a circuit board having raised buttons disposed on a first surface of the circuit board, resilient switches disposed on a periphery of the first surface, and through-holes, wherein each of the raised buttons and switches, when actuated, closes a circuit on the circuit board and affects an input to the device. The keypad device includes a faceplate fastened to the circuit board, the faceplate having an array of openings configured to allow the buttons to pass through, bosses extending from a first surface of the faceplate toward the circuit board and positioned to pass through the through-holes on the circuit board, and plungers aligned above and in contact with the resilient switches such that when the plate is pressed toward the circuit board, in a region at or near a subject plunger, the subject plunger actuates the resilient switch that is in contact with the plunger. | 2019-06-20 |
20190189373 | ELECTRIC CONTROL MECHANISM, AND AN AIRCRAFT - An electrical control mechanism having a support. A central body that is movable in rotation about a central axis of rotation (AXROTC) carries a button that is movable in rotation relative to the central body about an offset axis of rotation (AXROTD) parallel to the central axis of rotation (AXROTC). First return means are interposed between the central body and the button, with second return means being interposed between the central body and the support. Two primary electric switches are interposed between the button and the central body on either side of a plane containing the central axis of rotation (AXROTC) and the offset axis of rotation (AXROTD). Two secondary electric switches are interposed between the support and the central body on either side of the plane. | 2019-06-20 |
20190189374 | ACTUATOR - An actuator includes an actuator body, an output piston portion, an ignition device and a sealing member formed of a metal plate-like member. The sealing member separates a space in the actuator body into a first space where the ignition device is disposed and a second space where the output piston portion is disposed, and seals a combustion product generated by the ignition device in the first space. A peripheral edge portion of the sealing member is fixed to an inner wall that defines the space. The sealing member is deformed by the gunpowder combustion such that its central portion is displaced to a side of the output piston portion, to thereby press the output piston portion using the central portion and cause the output piston portion to slide in the through hole. With this, energy for driving an output piston portion is suitably transmitted to the output piston portion. | 2019-06-20 |
20190189375 | ELECTROMAGNETIC RELAY AND COIL TERMINAL - An electromagnetic relay | 2019-06-20 |
20190189376 | SINGLE COIL MAGNETIC LATCHING RELAY CONTROL CIRCUIT AND METHOD - A control circuit and method for a single coil magnetic latching relay is provided in the present disclosure. The circuit includes: a first control circuit ( | 2019-06-20 |
20190189377 | SNAP FIT CIRCUIT BREAKER AND LOAD CENTER SYSTEM - A circuit breaker and panel system includes a panel including a base pan having a plurality of base pan electrical connections. A circuit breaker including a housing having a plurality of circuit breaker electrical connections arranged to contact the base pan electrical connections when the circuit breaker is coupled to the base pan. The circuit breaker is rotatably coupleable with the base pan via a pivot joint for engaging the plurality of base pan electrical connections with the plurality of circuit breaker electrical connections per a predetermined electrical connection coupling sequence. One of the housing and the base pan includes a protrusion and the other of the housing and the base pan includes a corresponding recess which, when engaged with each other, retain the housing to the base pan to prevent reverse rotational movement of the breaker with respect to the base pan. | 2019-06-20 |
20190189378 | BUS PLUG INCLUDING REMOTELY OPERATED CIRCUIT BREAKER AND ELECTRICAL SYSTEM INCLUDING THE SAME - A bus plug structured to electrically connect between a busway and a load includes a circuit breaker structured to electrically connect between connectors and the load and to output a first control signal, the circuit breaker including separable contacts structured to open to stop power from the flowing from the busway to the load, a motor operator structured to cause the separable contacts to open or close in response to the first control signal from the circuit breaker, and a wireless communication module structured to wirelessly communicate with an external device and to output a second control signal to the circuit breaker is response to wireless communication received from the external device. The circuit breaker is structured to output the first control signal to the motor operator to open or close the separable contacts in response to receiving the second control signal from the wireless communication module. | 2019-06-20 |
20190189379 | CIRCUIT BREAKERS INCORPORATING RESET LOCKOUT MECHANISMS - Multi-pole and single-pole circuit breakers include a housing and a reset lockout mechanism disposed within the housing. The reset lockout mechanism disables electrical communication between line and load terminals of the circuit breaker if a predefined condition exists. Some circuit breakers include a single actuator, transition between ON and OFF states, and are capable of performing test functions. The test functions may involve testing AFCI and/or GFCI functions of the circuit breakers. The test functions may be performed when the circuit breaker transitions from an OFF state to an ON state. Some circuit breakers including a reset lockout mechanism may be powered only on its line side. Some circuit breakers provide an electrical indication when they are in the OFF state. | 2019-06-20 |
20190189380 | DIRECT-ACTING ELECTROMAGNETIC TRIP DEVICE - A direct-acting electromagnetic trip device including a housing, and a regulation mechanism, a linkage mechanism, an electromagnetic system and a trip mechanism which are arranged in the housing. The regulation mechanism is connected with the linkage mechanism, the linkage mechanism is connected with one end of an iron core of the electromagnetic system, and the linkage mechanism is connected with the trip mechanism at the same time. The regulation mechanism includes a rotary knob and a regulation rod, wherein the rotary knob is abutted against and engaged with the regulation rod, and the regulation rod is abutted against and engaged with the linkage mechanism. The electromagnetic system further includes an elastic element that pushes the iron core to allow the linkage mechanism to be abutted against the regulation rod and allow the rotary knob to be abutted against the regulation rod. | 2019-06-20 |
20190189381 | ELECTRICAL PROTECTION DEVICE HAVING A PYROTECHNIC ACTUATION SYSTEM - A multipolar electrical protection device has a disconnecting block with separable contacts containing at least one movable contact finger, a switching mechanism able to move the contact fingers, and an electronic tripping system that drives the mechanism. The protection device has a pyrotechnic actuation system including: a pyrotechnic actuator; firing pins positioned facing the contact fingers and each able to be moved to a pressed position in which it pushes a contact finger; a motion transmission system for transforming the movement of a mobile part of the pyrotechnic actuator to the deployed position thereof into a simultaneous movement of all of the firing pins to the pressed position. The tripping system is able to activate a pyrotechnic actuator when it detects an electrical fault. | 2019-06-20 |
20190189382 | FUSIBLE LINK IN BATTERY MODULE VOLTAGE SENSING CIRCUIT - Devices and systems are provided that incorporate fusible links within the electrical traces of a battery module voltage sensing circuit. The fusible links can be integrally formed in an electric trace and provide an overcurrent protection feature for the circuit without requiring fuse elements or components that are separate from the electrical trace. Each of these fusible links include a substantially flat controlled cross-sectional area disposed along a length of the material making up the electrical trace. In an overcurrent situation, the connection between a battery management system and a battery cell may be severed by the overcurrent melting the fusible link. The electrical traces may be spaced apart from one another in the circuit such that an overcurrent situation breaking the connection between one cell and the battery management system would not affect adjacent electrical traces not having an overcurrent situation. | 2019-06-20 |
20190189383 | DEVICES HAVING AN ELECTRON EMITTING STRUCTURE - Controlling total emission current of an electron emitting construct in an x-ray emitting device by providing a cathode, providing multiple active areas each active area having a gated cone electron source, including multiple emitter tips arranged in an array, a gate electrode, and a gate interconnect lead connected to the gate electrode, providing an x-ray emitting construct comprising an anode, the anode being an x-ray target, situating the x-ray emitting construct facing the active areas face each other, selecting a set of active areas, and activating selected active areas by conductively connecting a voltage source to their associated the gate electrode interconnect lead. | 2019-06-20 |
20190189384 | BIPOLAR GRID FOR CONTROLLING AN ELECTRON BEAM IN AN X-RAY TUBE - A bipolar grid may be positioned between a cathode and an anode. The bipolar grid may receive a positive grid voltage that corresponds to a voltage in an electric field between the cathode and the anode such that the grid does not interfere with an electron beam generated by an electron emitter of the cathode. The bipolar grid may receive a negative grid voltage to isolate the electron emitter such that the electron beam does not reach the anode. | 2019-06-20 |
20190189385 | HIGH TEMPERATURE ANNEALING IN X-RAY SOURCE FABRICATION - The present disclosure relates to multi-layer X-ray sources having decreased hydrogen within the layer stack and/or tungsten carbide inter-layers between the primary layers of X-ray generating and thermally-conductive materials. The resulting multi-layer target structures allow increased X-ray production, which may facilitate faster scan times for inspection or examination procedures. | 2019-06-20 |
20190189386 | SYSTEM AND METHOD FOR IMPROVING X-RAY PRODUCTION IN AN X-RAY DEVICE - An x-ray device is presented. The x-ray device includes a cathode configured to emit an electron beam. Also, the x-ray device includes an anode configured to rotate about a longitudinal axis of the x-ray device and positioned to receive the emitted electron beam, where the anode includes a target element disposed on an anode surface of the anode and a track element embedded in the target element, where the track element is configured to generate x-rays in response to the emitted electron beam impinging on a focal spot on the track element, where at least a portion of the track element is configured to transition from a first phase to a second phase based on heat generated in at least a portion of the track element, and where at least the portion of the track element is configured to distribute the generated heat across the anode. | 2019-06-20 |
20190189387 | Dynamic Temperature Control Of An Ion Source - A system and method for varying the temperature of a faceplate for an ion source is disclosed. The faceplate is held against the chamber walls of the ion source by a plurality of fasteners. These fasteners may include tension springs or compression springs. By changing the length of the tension spring or compression spring when under load, the spring force of the spring can be increased. This increased spring force increases the compressive force between the faceplate and the chamber walls, creating improved thermal conductivity. In certain embodiments, the length of the spring is regulated by an electronic length adjuster. This electronic length adjuster is in communication with a controller that outputs an electrical signal indicative of the desired length of the spring. Various mechanisms for adjusting the length of the spring are disclosed. | 2019-06-20 |
20190189388 | COMPOSITE BEAM APPARATUS - Disclosed is a composite beam apparatus capable of suppressing the influence of charge build-up, or electric field or magnetic field leakage from an electron beam column when subjecting a sample to cross-section processing with a focused ion beam and then performing finishing processing with another beam. The Composite beam apparatus includes: an electron beam column irradiating an electron beam onto a sample; a focused ion beam column irradiating a focused ion beam onto the sample to form a cross section; a neutral particle beam column having an acceleration voltage set lower than that of the focused ion beam column, and irradiating a neutral particle beam onto the sample to perform finish processing of the cross section, wherein the electron beam column, the focused ion beam column, and the neutral particle beam column are arranged such that the beams of the columns cross each other at an irradiation point. | 2019-06-20 |
20190189389 | CHARGED PARTICLE BEAM WRITING APPARATUS AND CHARGED PARTICLE BEAM WRITING METHOD - In one embodiment, a charged particle beam writing apparatus includes a deflector deflecting a charged particle beam, a first correcting lens and a second correcting lens correcting a focus position of the charged particle beam, a focus correction amount calculator calculating a first correction amount for the focus position according to a change in a height position of a sample surface, and calculating a second correction amount for the focus position according to a change in shot size of the charged particle beam, a first DAC (digital to analog converter) amplifier applying a voltage for a ground potential based on the first correction amount to the first correcting lens, and a second DAC amplifier applying a voltage for a ground potential based on the second correction amount to the second correcting lens, an output of the second DAC amplifier being smaller than an output of the first DAC amplifier. | 2019-06-20 |
20190189390 | System And Method To Monitor Glitch Energy - A system and method for monitoring glitch frequency and energy is disclosed. The system includes a glitch capture module that monitors the voltage of a biased component and captures any glitches that occur. The glitch capture module also extends the duration of that glitch so that the controller is guaranteed to observe this glitch. In certain embodiments, the glitch capture module captures the maximum energy of the glitch by storing the minimum voltage, in terms of magnitude, of the glitch. | 2019-06-20 |
20190189391 | RETRACTABLE DETECTOR - A method for evaluating a specimen, the method can include positioning an energy dispersive X-ray (EDX) detector at a first position; scanning a flat surface of the specimen by a charged particle beam that exits from a charged particle beam optics tip and propagates through an aperture of an EDX detector tip; detecting, by the EDX detector, x-ray photons emitted from the flat surface as a result of the scanning of the flat surface with the charged particle beam; after a completion of the scanning of the flat surface, positioning the EDX detector at a second position in which a distance between the EDX detector tip and a plane of the flat surface exceeds a distance between the plane of the flat surface and the charged particle beam optics tip; and wherein a projection of the EDX detector on the plane of the flat surface virtually falls on the flat surface when the EDX detector is positioned at the first position and when the EDX detector is positioned at the second position. | 2019-06-20 |
20190189392 | CHARGED PARTICLE BEAM SYSTEM AND METHODS - Disclosed is a charged particle beam system comprising a charged particle beam column having a charged particle source forming a charged particle beam, an objective lens and a first deflection system for changing a position of impingement of the charged particle beam in a sample plane. The system further comprises a sample chamber comprising a sample stage for holding a sample to be processed, and a controller configured to create and store a height map of a sample surface. The controller is further configured to dynamically adjust the objective lens of the charged particle beam in dependence on a position of impingement of the charged particle beam according to the height map. | 2019-06-20 |
20190189393 | ION FOCUSING DEVICE - Apparatus include a plurality of electrode arrangements spaced apart from each other opposite an ion propagation axis and defining an ion transfer channel that extends along the ion propagation axis that tapers between an input end that is situated to receive ions and an output end that is situated to couple the received ions to an input end of an ion guide. Methods include positioning a plurality of electrode arrangements at oblique angles opposite an ion propagation axis so as to form a ion transfer channel that tapers between an input end and an output end, and coupling the output end of the ion transfer channel to an input end of an ion optical element so as to direct ions in the ion transfer channel into the ion optical element. Related systems are also disclosed. | 2019-06-20 |
20190189394 | METHOD FOR IMPLANTING IONS ON A SURFACE OF AN OBJECT TO BE TREATED AND INSTALLATION FOR IMPLEMENTING THIS METHOD - A method for the implantation of mono- or multi-charged ions on a surface of an object to be treated placed in a vacuum chamber, wherein this method includes the step that consist simultaneously of: injecting into the vacuum chamber a beam of ions produced by a source of ions and directing this beam of ions towards the surface of the object to be treated, and illuminating the surface of the object to be treated with a source of ultraviolet radiation producing ultraviolet radiation that propagates in the vacuum chamber. An ion implantation installation for implementing the implantation method. | 2019-06-20 |
20190189395 | APERTURE SET FOR MULTI-BEAM - In one embodiment, an aperture set for multi-beam includes a shaping aperture array in which a plurality of first openings are formed, and which forms a multi-beam by allowing part of a charged particle beam to pass through corresponding ones of the plurality of first openings, a blanking aperture array in which a plurality of second openings are formed, the plurality of second openings each including a pair of blanking electrodes that perform blanking deflection of a beam, and an electric field shield plate that is disposed to be opposed to the blanking aperture array and includes a plurality of third openings. The electric field shield plate has a substrate, and a high resistance film provided on a surface of the substrate, the surface being opposed to the blanking aperture array, and the high resistance film has a higher electrical resistance value than an electrical resistance value of the substrate. | 2019-06-20 |
20190189396 | PLASMA PROCESSING APPARATUS - A plasma processing apparatus includes: a processing room disposed inside a vacuum chamber; a sample stage disposed inside the processing room, having an upper surface on which a wafer to be processed is to be mounted; a dielectric discoid member opposed to the upper surface of the sample stage in an upper part of the processing room; a discoid upper electrode disposed having a side covered with the discoid member, the side facing the sample stage, the discoid upper electrode being to be supplied with first radio-frequency power for forming an electric field for forming plasma in the processing room; a coil disposed circumferentially above the processing room outside the vacuum chamber, the coil being configured to generate a magnetic field for forming the plasma; and a lower electrode disposed inside the sample stage, the lower electrode being to be supplied with second radio-frequency power for forming a bias potential on the wafer mounted on the sample stage. A ring-shaped recess and a metal ring-shaped member are provided between the discoid member and the upper electrode, the ring-shaped recess being formed on the discoid member, the metal ring-shaped member being embedded in the ring-shaped recess in contact with the upper electrode. | 2019-06-20 |
20190189397 | ANALYSIS METHOD AND SEMICONDUCTOR ETCHING APPARATUS - There is provided a method of analyzing data obtained from an etching apparatus for micromachining a wafer using plasma. This method includes the following steps: acquiring the plasma light-emission data indicating light-emission intensities at a plurality of different wavelengths and times, the plasma light-emission data being measured under a plurality of different etching processing conditions, and being obtained at the time of the etching processing, evaluating the relationship between changes in the etching processing conditions and changes in the light-emission intensities at the plurality of different wavelengths and times with respect to the wavelengths and times of the plasma light-emission data, and identifying the wavelength and the time of the plasma light-emission data based on the evaluation result, the wavelength and the time being to be used for the adjustment of the etching processing condition. | 2019-06-20 |
20190189398 | MICROWAVE PLASMA PROCESSING APPARATUS - A microwave plasma processing apparatus includes a microwave supply part configured to supply a microwave, and a microwave emission member provided on a ceiling of a process chamber and configured to emit the microwave supplied from the microwave supply part. A microwave transmission member is provided to close an opening provided in the ceiling and made of a dielectric substance that transmits the microwave transmitted to a slot antenna via the microwave emission member. The ceiling has at least one recess having a depth in a range of λ | 2019-06-20 |
20190189399 | METHODS AND APPARATUS FOR DYNAMICAL CONTROL OF RADIAL UNIFORMITY IN MICROWAVE CHAMBERS - Plasma is generated in a semiconductor process chamber by a plurality of microwave inputs with slow or fast rotation. Radial uniformity of the plasma is controlled by regulating the power ratio of a center-high mode and an edge-high mode of the plurality of microwave inputs into a microwave cavity. The radial uniformity of the generated plasma in a plasma chamber is attained by adjusting the power ratio for the two modes without inputting time-splitting parameters for each mode. | 2019-06-20 |
20190189400 | Geometrically Selective Deposition Of Dielectric Films Utilizing Low Frequency Bias - Apparatus and methods for depositing and treating or etching a film are described. A batch processing chamber includes a plurality of processing regions with at least one plasma processing region. A low frequency bias generator is connected to a susceptor assembly to intermittently apply a low frequency bias to perform a directional treatment or etching the deposited film. | 2019-06-20 |
20190189401 | MULTI-ZONE GAS DISTRIBUTION SYSTEMS AND METHODS - The present technology includes improved gas distribution designs for forming uniform plasmas during semiconductor processing operations or for treating the interior of semiconductor processing chambers. While conventional gas distribution assemblies may receive a specific reactant or reactant ratio which is then distributed into the plasma region, the presently described technology allows for improved control of the reactant input distribution. The technology allows for separate flows of reactants to different regions of the plasma to offset any irregularities observed in process uniformity. A first precursor may be delivered to the center of the plasma above the center of the substrate/pedestal while a second precursor may be delivered to an outer portion of the plasma above an outer portion of the substrate/pedestal. In so doing, a substrate residing on the pedestal may experience a more uniform etch or deposition profile across the entire surface. | 2019-06-20 |
20190189402 | METHODS AND ASSEMBLIES USING FLOURINE CONTAINING AND INERT GASSES FOR PLASMA FLOOD GUN (PFG) OPERATION - A gas supply assembly is described for delivery of gas to a plasma flood gun which includes an inert gas and a fluorine-containing gas, wherein the assembly is configured to deliver a volume of the fluorine-containing gas to the flood gun that is not greater than 10% of a total volume of the fluorine-containing and inert gasses. The fluorine-containing gas can generate volatile reaction product gases from material deposits in the plasma flood gun, and to effect re-metallization of a plasma generation filament in the plasma flood gun. In combination with the gas amounts, the assembly and methods can use gas flow rates to optimize the cleaning effect and reduce filament material loss from the plasma flood gun during use. | 2019-06-20 |
20190189403 | PLASMA PROCESSING APPARATUS - The present invention is a plasma processing apparatus that includes a processing chamber where plasma processing is performed on a sample, a radio frequency power supply that supplies radio frequency power to generate plasma, a sample stage on which the sample is placed, and a gas supply unit that supplies a gas to the processing chamber. The gas supply unit includes a first pipe that supplies a first gas as a gas for etching process to the processing chamber, a second pipe that supplies a second gas as a gas for etching process to the processing chamber, and a third pipe through which a third gas as a gas for deposition process flows. The third pipe is coupled to the second pipe. A fourth valve is arranged on the second pipe. The fourth valve prevents the third gas from flowing in a direction toward a supply source of the second gas. | 2019-06-20 |
20190189404 | Shaped Electrodes For Improved Plasma Exposure From Vertical Plasma Source - Plasma source assemblies comprising an RF hot electrode having a body and at least one return electrode spaced from the RF hot electrode to provide a gap in which a plasma can be formed. An RF feed is connected to the RF hot electrode at a distance from the inner peripheral end of the RF hot electrode that is less than or equal to about 25% of the length of the RF hot electrode. The RF hot electrode can include a leg and optional triangular portion near the leg that extends at an angle to the body of the RF hot electrode. A cladding material on one or more of the RF hot electrode and the return electrode can be variably spaced or have variable properties along the length of the plasma gap. | 2019-06-20 |
20190189405 | Two-Phased Atmospheric Plasma Generator - A plasma generator includes an outer electrode that encloses a first inner electrode and a second inner electrode. The first inner electrodes includes a plurality of protrusions that extend towards the outer electrode. A voltage signal can be applied across the outer electrode and the first inner electrode to excite gas injected into gaps between the protrusions and the outer electrode. Plasma is generated surrounding the protrusions. The second inner electrode is at a downstream location of the excited gas relative to the first inner electrode. The second inner electrode forms a second gap with the outer electrode. A voltage signal can be applied across the second inner electrode and the outer electrode, further exciting the gas to generate second plasma at the second gap. The second plasma is spread evenly across the second inner electrode and the outer electrode. | 2019-06-20 |
20190189406 | APPARATUS AND METHOD FOR CLEANING AN INLET OF A MASS SPECTROMETER - A method of removing sample residue from a surface of a mass spectrometer inlet, with the surface being adjacent to an ion passageway, is provided. A pendent droplet of a cleaning solvent is formed at a tip of a capillary, with the tip being spaced apart from the surface. The pendent droplet detaches from the tip and contacts the surface. The surface is heated to a temperature T at least 50° C. above the boiling point of the least volatile component of the cleaning solvent. | 2019-06-20 |
20190189407 | METHODS AND APPARATUS FOR SUBSTRATE EDGE UNIFORMITY - A movable substrate support with a top surface for holding a substrate, when present, is used in conjunction with a cover ring that is stationary to adjust for a shadow effect to control substrate edge uniformity during deposition processes. The cover ring is held stationary by an electrically isolated spacer that engages with a grounded shield in the process volume of a semiconductor process chamber. A controller adjusts the substrate support in response to deposition material on a top surface of the cover ring to maintain the shadow effect and substrate edge uniformity. | 2019-06-20 |
20190189408 | PHOTOCATHODE ASSEMBLY OF VACUUM PHOTOELECTRONIC DEVICE WITH A SEMI-TRANSPARENT PHOTOCATHODE BASED ON NITRIDE GALLIUM COMPOUNDS - A photocathode assembly of a vacuum photoelectronic device with a semi-transparent photocathode that consists of an input window in the form of a disk made from sapphire, layers of heteroepitaxial structure of gallium nitride compounds as a semi-transparent photocathode grown on the inner surface of the input window, and an element for connecting the input window with a vacuum photoelectronic device housing, which is vacuum-tight fixed on the outer surface of the input window at its periphery. The element for connecting of the input window with the vacuum photoelectronic device housing is made of a bimetal, in which a layer that is not in contact with the outer surface of the input window consists of a material with a temperature coefficient of linear expansion that differs from the temperature coefficient of linear expansion of sapphire by no more than 10% in the temperature range from 20° C. to 200° C. | 2019-06-20 |
20190189409 | Photomultiplier Tube and Method of Making It - Disclosed herein is a photomultiplier tube (PMT) comprising: an electron ejector configured for emitting primary electrons in response to an incident photon; a detector configured for collecting electrons and providing an output signal representative of the incident photon; and a series of electrodes between the electron ejector and the detector, wherein each of the electrodes is configured for emitting secondary electrons in response to incident electrons, and each of the electrodes includes a bi-metal arc-shaped sheet. | 2019-06-20 |
20190189410 | THERMIONIC WAVE GENERATOR (TWG) - Energy conversion systems that may employ control grid electrodes, acceleration grid electrodes, inductive elements, multi-stage anodes, and emissive carbon coatings on the cathode and anode are described. These and other characteristics may allow for advantageous thermal energy to electrical energy conversion. | 2019-06-20 |
20190189411 | COLLISION CELLS AND METHODS OF USING THEM - Certain embodiments described herein are directed to collision cells that comprise one or more integrated lenses. In some examples, a lens is coupled to two sections of a sectioned quadrature rod assembly, the lens comprising an aperture and a plurality of separate conductive elements disposed each one side of the lens, in which a respective disposed conductive element on one side of the lens is configured to electrically couple to a first, second, third, and fourth pole segments of the sectioned quadrature rod assembly. | 2019-06-20 |
20190189412 | METHOD AND PORTABLE ION MOBILITY SPECTROMETER FOR THE DETECTION OF AN AEROSOL - A portable ion mobility spectrometry apparatus ( | 2019-06-20 |
20190189413 | IN-SITU CONDITIONING IN MASS SPECTROMETRY SYSTEMS - In a mass spectrometer or gas chromatograph/mass spectrometer system, one or more different conditioning gases are added to condition or modify one or more surfaces or regions of the ion source. The conditioning gas(es) may be added directly into the ion source. The conditioning gas may be added off-line, when the mass spectrometer is not analyzing a sample. | 2019-06-20 |
20190189414 | IMAGING MASS SPECTROMETRY DATA PROCESSING DEVICE AND IMAGING MASS SPECTROMETRY DATA PROCESSING METHOD - The user specifies regions of interest (ROIs) such as a region where a large amount of compound to be identified is estimated to be included and a region where the compound is overlapped with another compound on one or more specific MS images, and specifies addition or subtraction of the ROIs. For each of the specified ROIs, an average MS/MS spectrum is calculated from MS/MS spectrum data at measurement points in the regions, and the average MS/MS spectra at the ROIs are subjected to addition or subtraction, to obtain an MS/MS spectrum. By addition between the ROIs, the intensity of peak derived from the target compound can be increased. By subtraction between the ROIs, a peak derived from the other compound overlapped with the target compound can be removed. When the MS/MS spectrum after addition or subtraction is subjected to library search for identification, a score indicating the similarity of the spectrum is higher than the conventional score, and the identification accuracy can be improved. | 2019-06-20 |
20190189415 | SYNCHRONIZATION OF ION GENERATION WITH CYCLING OF A DISCONTINUOUS ATMOSPHERIC INTERFACE - The invention generally relates to methods and devices for synchronization of ion generation with cycling of a discontinuous atmospheric interface. In certain embodiments, the invention provides a system for analyzing a sample that includes a mass spectrometry probe that generates sample ions, a discontinuous atmospheric interface, and a mass analyzer, in which the system is configured such that ion formation is synchronized with cycling of the discontinuous atmospheric interface. | 2019-06-20 |
20190189416 | SPRAY CHAMBERS AND METHODS OF USING THEM - Devices, systems and methods including a spray chamber are described. In certain examples, the spray chamber may be configured with an outer chamber configured to provide tangential gas flows. In other instances, an inner tube can be positioned within the outer chamber and may comprise a plurality of microchannels. In some examples, the outer chamber may comprise dual gas inlet ports. In some instances, the spray chamber may be configured to provide tangential gas flow and laminar gas flows to prevent droplet formation on surfaces of the spray chamber. Optical emission devices, optical absorption devices and mass spectrometers using the spray chamber are also described. | 2019-06-20 |
20190189417 | OFF-AXIS IONIZATION DEVICES AND SYSTEMS USING THEM - An ion source comprising a chamber and an electron collector is described. In one configuration, the chamber comprises a sample inlet and an ion outlet. The chamber may also include an electron inlet configured to receive electrons from an electron source. The electron collector can be arranged in opposition to the electron inlet. The chamber can be configured to direct an electron beam from the electron source along a path with the chamber transverse to a path between the gas inlet and the ion outlet. The chamber may comprise an ion guide that includes a guide axis offset from an axis of the ion outlet. | 2019-06-20 |
20190189418 | ION ANALYZER - A microchannel plate (MCP) | 2019-06-20 |
20190189419 | MEMS-BASED 3D ION TRAPPING DEVICE FOR USING LASER PENETRATING ION TRAPPING STRUCTURE, AND METHOD FOR MANUFACTURING SAME - An ion trap device is disclosed with a method of manufacturing thereof including a substrate, first and second RF electrode rails, first and second DC electrodes on either upper or lower side of substrate, and a laser penetration passage connected to ion trapping zone from outer side of the first or second side of substrate. The substrate includes ion trapping zone in space defined by first and second sides of substrate separated by a distance with reference to width direction of ion trap device. The first and second RF electrode rails are arranged in parallel longitudinally of ion trap device. The first RF electrode is arranged on upper side of first side, the second DC electrode is arranged on lower side of first side, the first DC electrode is arranged on upper side of second side, and the second RF electrode rail is arranged on lower side of second side. | 2019-06-20 |
20190189420 | Surface Treatment of Substrates Using Passivation Layers - Processes and apparatuses for the treatment of semiconductor workpieces are provided. In some embodiments, a method can include placing the workpiece in a processing chamber. The processing chamber can be separated from a plasma chamber by a separation grid assembly. The method can include forming a passivation layer on the workpiece in the processing chamber using radicals generated in a first plasma in the plasma chamber. The method can include performing a surface treatment process on the workpiece in the processing chamber using a second plasma generated in the plasma chamber. | 2019-06-20 |
20190189421 | SEMICONDUCTOR WAFER, AND METHOD FOR POLISHING SEMICONDUCTOR WAFER - The present invention provides: an InP wafer optimized from the viewpoint of small edge roll-off (ERO) and sufficiently high flatness even in the vicinity of a wafer edge; and a method for effectively producing the InP wafer. The InP wafer having a roll-off value (ROA) of from −1.0 μm to 1.0 μm is obtained by using a method including: performing a first stage polishing under a processing pressure of from 10 to 200 g/cm | 2019-06-20 |
20190189422 | METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE, SUBSTRATE-PROCESSING APPARATUS, AND RECORDING MEDIUM - There is provided a method for manufacturing a semiconductor device, including: providing a substrate with an oxide film formed on a surface thereof; pre-processing a surface of the oxide film; and forming a nitride film containing carbon on the surface of the oxide film which has been pre-processed, by performing a cycle a predetermined number of times, the cycle including non-simultaneously performing: supplying a precursor gas to the substrate; supplying a carbon-containing gas to the substrate; and supplying a nitrogen-containing gas to the substrate, or by performing a cycle a predetermined number of times, the cycle including non-simultaneously performing: supplying a precursor gas to the substrate; and supplying a gas containing carbon and nitrogen to the substrate, or by performing a cycle a predetermined number of times, the cycle including non-simultaneously performing: supplying a precursor gas containing carbon to the substrate; and supplying a nitrogen-containing gas to the substrate. | 2019-06-20 |
20190189423 | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE - In one embodiment, a method of manufacturing a semiconductor device includes forming a first film on a substrate. The method further includes performing a first process of forming a concave portion in the first film and forming a second film on a surface of the first film that is exposed in the concave portion by using a first gas containing a carbon element and a fluorine element. The method further includes performing a second process of exposing the second film to a second gas containing a hydrogen element or a fluid generated from the second gas. | 2019-06-20 |
20190189424 | USING SACRIFICIAL SOLIDS IN SEMICONDUCTOR PROCESSING - In an example, a method may include closing an opening in a structure with a sacrificial material at a first processing tool, moving the structure from the first processing tool to a second processing tool while the opening is closed, and removing the sacrificial material at the second processing tool. The structure may be used in semiconductor devices, such as memory devices. | 2019-06-20 |
20190189425 | RESIDUE REMOVAL - In an example, a method may include removing a material from a structure to form an opening in the structure, exposing a residue, resulting from removing the material, to an alcohol gas to form a volatile compound, and removing the volatile compound by vaporization. The structure may be used in semiconductor devices, such as memory devices. | 2019-06-20 |
20190189426 | SUBLIMATION IN FORMING A SEMICONDUCTOR - The present disclosure includes apparatuses and methods related to sublimation in forming a semiconductor. In an example, a method may include forming a sacrificial material in an opening of a structure, wherein the sacrificial material displaces a solvent used in a wet clean operation and removing the sacrificial material via sublimation by exposing the sacrificial material to sub-atmospheric pressure. | 2019-06-20 |
20190189427 | FREEZING A SACRIFICIAL MATERIAL IN FORMING A SEMICONDUCTOR - The present disclosure includes apparatuses and methods related to freezing a sacrificial material in forming a semiconductor. In an example, a method may include solidifying, via freezing, a sacrificial material in an opening of a structure, wherein the sacrificial material has a freezing point below a boiling point of a solvent used in a wet clean operation and removing the sacrificial material via sublimation by exposing the sacrificial material to a particular temperature range. | 2019-06-20 |
20190189428 | PATTERNING MATERIAL FILM STACK WITH METAL-CONTAINING TOP COAT FOR ENHANCED SENSITIVITY IN EXTREME ULTRAVIOLET (EUV) LITHOGRAPHY - A lithographic patterning method includes forming a multi-layer patterning material film stack on a semiconductor substrate, the patterning material film stack including a resist layer formed over one or more additional layers, and forming a metal-containing top coat over the resist layer. The method further includes exposing the multi-layer patterning material film stack to patterning radiation through the metal-containing top coat to form a desired pattern in the resist layer, removing the metal-containing top coat, developing the pattern formed in the resist layer, etching at least one underlying layer in accordance with the developed pattern, and removing remaining portions of the resist layer. The metal-containing top coat can be formed, for example, by atomic layer deposition or spin-on deposition over the resist layer, or by self-segregation from the resist layer. | 2019-06-20 |
20190189429 | SURFACE TREATMENT OF TITANIUM CONTAINING HARDMASKS - A surface treatment composition and methods for improving adhesion of an organic layer on a titanium-containing hardmask includes forming a self-assembled monolayer on a surface of the titanium-containing hardmask prior to depositing the organic layer. The self-assembled monolayer is formed from a blend of alkyl phosphonic acids of formula (I): X(CH | 2019-06-20 |
20190189430 | COMPOSITION FOR FORMING SILICA LAYER, SILICA LAYER, AND ELECTRONIC DEVICE - A composition for forming a silica layer includes a silicon-containing polymer and a solvent, the composition having a SiO | 2019-06-20 |
20190189431 | High Temperature Atomic Layer Deposition of Silicon Oxide Thin Films - Atomic layer deposition (ALD) process formation of silicon oxide with temperature>500° C. is disclosed. | 2019-06-20 |
20190189432 | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, SUBSTRATE PROCESSING APPARATUS, AND RECORDING MEDIUM - A film containing Si, C and N is formed on a substrate by performing a cycle a predetermined number of times, the cycle including non-simultaneously performing: (a) supplying a first precursor containing a Si—C bond and not containing halogen to the substrate; and (b) supplying a second precursor containing a Si—N bond and not containing an alkyl group to the substrate, wherein (a) and (b) are performed under a condition that at least a part of the Si—C bond in the first precursor and at least a part of the Si—N bond in the second gas are held without being cut. | 2019-06-20 |
20190189433 | METHOD TO REDUCE TRAP-INDUCED CAPACITANCE IN INTERCONNECT DIELECTRIC BARRIER STACK - The present disclosure provides an interconnect formed on a substrate and methods for forming the interconnect on the substrate. In one embodiment, the method for forming an interconnect on a substrate includes depositing a barrier layer on the substrate, depositing a transition layer on the barrier layer, and depositing an etch-stop layer on the transition layer, wherein the transition layer shares a common element with the barrier layer, and wherein the transition layer shares a common element with the etch-stop layer. | 2019-06-20 |
20190189434 | SEMICONDUCTOR PROCESSING METHOD - A method of processing semiconductor material includes applying an organosulfur solution to a top surface of a semiconductor material, the organosulfur solution having at least one organosulfur compound. The at least one organosulfur compound has at least one sulfur atom double bonded to a carbon atom and a pH of not less than 8. An organosulfur solution may be applied at temperatures above 25° C. to increase sulfur deposition rates and increase sulfur coverage on a surface of a semiconductor material. | 2019-06-20 |
20190189435 | CONTROLLED GROWTH OF THIN SILICON OXIDE FILM AT LOW TEMPERATURE - Implementations described herein generally relate to methods for forming a low-k dielectric material on a semiconductor substrate. More specifically, implementations described herein relate to methods of forming a silicon oxide film at high pressure and low temperatures. In one implementation, a method of forming a silicon oxide film is provided. The method comprises loading a substrate having a silicon-containing film formed thereon into a processing region of a high-pressure vessel. The method further comprises forming a silicon oxide film on the silicon-containing film. Forming the silicon oxide film on the silicon-containing film comprises exposing the silicon-containing film to a processing gas comprising steam at a pressure greater than about 1 bar and maintaining the high-pressure vessel at a temperature between about 100 degrees Celsius and about 500 degrees Celsius. | 2019-06-20 |
20190189436 | METHODS FOR USING REMOTE PLASMA CHEMICAL VAPOR DEPOSITION (RP-CVD) AND SPUTTERING DEPOSITION TO GROW LAYERS IN LIGHT EMITTING DEVICES - Described herein are methods for using remote plasma chemical vapor deposition (RP-CVD) and sputtering deposition to grow layers for light emitting devices. A method includes growing a light emitting device structure on a growth substrate, and growing a tunnel junction on the light emitting device structure using at least one of RP-CVD and sputtering deposition. The tunnel junction includes a p++ layer in direct contact with a p-type region, where the p++ layer is grown by using at least one of RP-CVD and sputtering deposition. Another method for growing a device includes growing a p-type region over a growth substrate using at least one of RP-CVD and sputtering deposition, and growing further layers over the p-type region. Another method for growing a device includes growing a light emitting region and an n-type region using at least one of RP-CVD and sputtering deposition over a p-type region. | 2019-06-20 |
20190189437 | METHOD FOR PROCESSING WORKPIECE - In one embodiment in which a technology which is capable of reducing voids that can occur when burying an insulating film into a trench while suppressing process complication, a method MT for processing a wafer W is provided. The wafer W has a groove | 2019-06-20 |
20190189438 | CONDUCTIVE C-PLANE GaN SUBSTRATE - A conductive C-plane GaN substrate has a resistivity of 2×10 | 2019-06-20 |
20190189439 | METHOD FOR GROWING GaN CRYSTAL AND C-PLANE GaN SUBSTRATE - A method for growing a GaN crystal suitable as a material of GaN substrates including C-plane GaN substrates includes: a first step of preparing a GaN seed having a nitrogen polar surface; a second step of arranging a pattern mask on the nitrogen polar surface of the GaN seed, the pattern mask being provided with a periodical opening pattern comprising linear openings and including intersections, the pattern mask being arranged such that longitudinal directions of at least part of the linear openings are within ±3° from a direction of an intersection line between the nitrogen polar surface and an M-plane; and a third step of ammonothermally growing a GaN crystal through the pattern mask such that a gap is formed between the GaN crystal and the pattern mask. | 2019-06-20 |
20190189440 | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, SUBSTRATE PROCESSING APPARATUS, AND RECORDING MEDIUM - There is provided a method of manufacturing a semiconductor device, comprising forming a film on a substrate in a process chamber by performing a cycle a predetermined number of times. The cycle includes alternately performing supplying a halogen-based first process gas to the substrate in the process chamber, and supplying a non-halogen-based second process gas to the substrate in the process chamber. Further, an internal pressure of the process chamber in the act of supplying the first process gas is set to be higher than an internal pressure of the process chamber in the act of supplying the second process gas. | 2019-06-20 |
20190189441 | P-TYPE OXIDE SEMICONDUCTOR AND METHOD FOR MANUFACTURING SAME - A new and useful p-type oxide semiconductor with a wide band gap and an enhanced electrical conductivity and the method of manufacturing the p-type oxide semiconductor are provided. A method of manufacturing a p-type oxide semiconductor including: generating atomized droplets by atomizing a raw material solution including iridium and a metal that is different from iridium and optionally contained; carrying the atomized droplets onto a surface of a base by using a carrier gas; causing a thermal reaction of the atomized droplets adjacent to the surface of the base to form a crystal or a mixed crystal of a metal oxide including iridium. | 2019-06-20 |
20190189442 | METHOD OF MANUFACTURING EPITAXIAL SILICON WAFER, EPITAXIAL SILICON WAFER, AND METHOD OF MANUFACTURING SOLID-STATE IMAGE SENSING DEVICE - Provided are an epitaxial silicon wafer which can reduce metal contamination by exerting higher gettering capability and a method of manufacturing the same. In a method of manufacturing an epitaxial silicon wafer which includes a silicon wafer, a first silicon epitaxial layer formed on the silicon wafer, a first modifying layer in which carbon is implanted in a surface layer portion of the first silicon epitaxial layer, and a second silicon epitaxial layer on the first modifying layer, the peak concentration of the oxygen concentration profile in the first modifying layer after formation of the second silicon epitaxial layer is set to 2×10 | 2019-06-20 |
20190189443 | METHODS AND STRUCTURES FOR FORMING A TIGHT PITCH STRUCTURE - A method for manufacturing a semiconductor device includes forming a plurality of amorphous silicon germanium (a-SiGe) structures having a first percentage of germanium on a substrate, forming a plurality of spacers on sides of the plurality of a-SiGe structures, performing an annealing to convert a portion of each of the a-SiGe structures into respective portions comprising a-SiGe having a second percentage of germanium higher than the first percentage of germanium, and to convert each of the spacers into respective silicon oxide portions, removing from the substrate at least one of: one or more unconverted portions of the a-SiGe structures having the first percentage of germanium, one or more of the converted portions of a-SiGe structures, and one or more of the silicon oxide portions, and transferring a pattern to the substrate to form a plurality of patterned substrate portions, wherein the pattern includes the portions remaining after the removing. | 2019-06-20 |
20190189444 | MANUFACTURING METHODS FOR MANDREL PULL FROM SPACERS FOR MULTI-COLOR PATTERNING - Embodiments are disclosed for processing microelectronic workpieces having patterned structures to improve mandrel pull from spacers for multi-color patterning. The disclosed embodiments form patterned structures on a substrate including mandrels, form spacers adjacent the mandrels that are recessed such that a height of the spacers is less than the height of the mandrels, form protective caps over the spacers while exposing top surfaces of the mandrels, and remove the mandrels to leave a spacer pattern with cap protection. The remaining spacer pattern can then be transferred to underlying layers in additional process steps. The recessing of the spacers and formation of the protective caps tends to reduce or eliminate spacer damage suffered by prior solutions during mandrel pull from spacers for multi-color patterning. | 2019-06-20 |
20190189445 | MANUFACTURING METHODS TO APPLY STRESS ENGINEERING TO SELF-ALIGNED MULTI-PATTERNING (SAMP) PROCESSES - Embodiments are disclosed for processing microelectronic workpieces to apply stress engineering to self-aligned multi-patterning (SAMP) processes. The disclosed processing methods utilize stress in a substrate in a SAMP process to improve resulting pattern parameters. Initially, a high stress film is deposited on the frontside and the backside of the substrate, and the high stress film provides biaxial stress to the substrate due to the deposition process for the high stress film. Next, a SAMP process is performed to form spacers in a spacer pattern. This spacer pattern is then transferred to underlying layers to form a patterned structure. The high stress film provides axial stress in at least one direction along a portion of the patterned structure during the pattern transfer thereby improving resulting pattern formation. | 2019-06-20 |
20190189446 | METHODS AND STRUCTURES FOR CUTTING LINES OR SPACES IN A TIGHT PITCH STRUCTURE - A method for manufacturing a semiconductor device includes forming a hardmask layer on a substrate, forming a plurality of spacers on the hardmask layer, wherein the plurality of spacers comprise a first set of spacers and a second set of spacers, reducing a height of each spacer of the second set of spacers to be less than a height of each spacer of the first set of spacers, removing one or more spacers from at least one of the first set of spacers and the second set of spacers, transferring a pattern of remaining spacers to the hardmask layer to form a plurality of patterned hardmask portions, and transferring a pattern of the plurality of patterned hardmask portions to the substrate to form one of a plurality of patterned substrate portions and a plurality of openings in the substrate. | 2019-06-20 |
20190189447 | METHOD FOR FORMING SQUARE SPACERS - A method for in-situ patterning a stack having a patterned mask with mask features including sidewalls and tops is provided. A plurality of patterning cycles is provided in a plasma chamber wherein each patterning cycle comprises: at least one (1) cycle of depositing an atomic layer deposition (ALD) over the mask features to create an ALD layer, wherein the ALD layer includes sidewalls over the sidewalls of the mask features and top portions over the tops of the mask features, and selectively etching the top portions of the ALD layer with respect to the sidewalls of the ALD layer. | 2019-06-20 |
20190189448 | APPARATUS FOR PROCESSING A SUBSTRATE AND DISPLAY DEVICE BY USING THE SAME - Disclosed herein is an apparatus for processing a substrate that forms a hole in a substrate while reducing a burr in the hole so that a module device can be inserted into the hole to reduce the thickness of a display device, and the display device using the apparatus. The apparatus for processing the substrate comprises a body configured to operably be rotatable, and a cylindrical cutting tip at an end of the body. The bottom surface of the cutting tip is in an acute angle with respect to a contact surface of the substrate to allow formation of a groove at the substrate. | 2019-06-20 |
20190189449 | LASER IRRADIATION APPARATUS, METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE, AND METHOD FOR OPERATING LASER IRRADIATION APPARATUS - A laser annealing apparatus ( | 2019-06-20 |
20190189450 | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE - Provided is a method of manufacturing a semiconductor device according to an embodiment, including implanting carbon ions into a predetermined region of a silicon substrate; forming a silicon carbide layer on the silicon substrate by performing heat treatment on the silicon substrate implanted with the carbon ions; and removing at least a portion of the silicon substrate to expose the silicon carbide layer. | 2019-06-20 |
20190189451 | SEMICONDUCTOR STRUCTURE WITH METAL GATE, AND METHOD FOR MANUFACTURING THE SAME - The present disclosure provides a semiconductor structure of a metal gate and a manufacturing method therefor. The manufacturing method includes providing a semiconductor substrate; uniformly depositing a first hard mask layer on the semiconductor substrate, corresponding to a region where the metal gate is located, patterning and etching the first hard mask layer to form a recess, forming a sloping sidewall on a sidewall of the recess, the sloping sidewall and an upper surface of the substrate forming a groove structure, with the size of an upper part of the groove structure being larger than that of a lower part thereof, and forming a metal gate in the groove structure; and removing the first hard mask layer. | 2019-06-20 |
20190189452 | METAL CUT PATTERNING AND ETCHING TO MINIMIZE INTERLAYER DIELECTRIC LAYER LOSS - The present disclosure relates to methods and apparatuses related to the deposition of a protective layer selective to an interlayer dielectric layer so that the protective layer is formed onto a top portion associated with the interlayer dielectric layer. In some embodiments, a method comprises: forming an interlayer dielectric layer on a substrate; covering a trench region with a metal liner, wherein the trench region is situated above the substrate and formed within the interlayer dielectric layer; and depositing a protective layer selective to the interlayer dielectric layer so that the protective layer is formed onto a top portion associated with the interlayer dielectric layer. In various embodiments, the depositing the protective layer comprises: repeatedly depositing the protective layer via a multi-deposition sequence; or depositing a self-assembled monolayer onto the top portion. | 2019-06-20 |
20190189453 | Silicide Films Through Selective Deposition - Methods for forming silicide films are disclosed. Methods of selectively depositing metal-containing films on silicon surfaces which are further processed to form silicide films are disclosed. Specific embodiments of the disclosure relate to the formation of silicide films on FinFET structures without the formation of a metal layer on the dielectric. | 2019-06-20 |
20190189454 | METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE - Examples of a method for manufacturing a semiconductor device include forming an initial film having a film thickness of 1 to 3 nm made of a metal or a metal nitride by applying plasma film formation with plasma power of 0.07 to 0.30 W/cm | 2019-06-20 |