25th week of 2019 patent applcation highlights part 69 |
Patent application number | Title | Published |
20190189856 | Light Emitting Device and Electronic Device - An object is to provide a highly reliable light emitting device which is thin and is not damaged by external local pressure. Further, another object is to manufacture a light emitting device with a high yield by preventing defects of a shape and characteristics due to external stress in a manufacture process. A light emitting element is sealed between a first structure body in which a fibrous body is impregnated with an organic resin and a second structure body in which a fibrous body is impregnated with an organic resin, whereby a highly reliable light emitting device which is thin and has intensity can be provided. Further, a light emitting device can be manufactured with a high yield by preventing defects of a shape and characteristics in a manufacture process. | 2019-06-20 |
20190189857 | LIGHT EMITTING DEVICE WITH REFLECTIVE SIDEWALL - Embodiments of the invention include a light emitting device including a substrate and a semiconductor structure including a light emitting layer. A first reflective layer surrounds the light emitting device. A wavelength converting element is disposed over the light emitting device. A second reflective layer is disposed adjacent a first sidewall of the wavelength converting element. | 2019-06-20 |
20190189858 | DISPLAY DEVICE - A display device including a backplane, a plurality of light-emitting devices, a first distributed Bragg reflector layer and a second distributed Bragg reflector layer is provided. The light-emitting devices are disposed on the backplane. The first distributed Bragg reflector layer is disposed between the backplane and the light-emitting devices. The light-emitting devices are disposed between the first distributed Bragg reflector layer and the second distributed Bragg reflector layer. A projected area of the first distributed Bragg reflector layer on the backplane is larger than a projected area of one of the light-emitting devices on the backplane or a projected area of the second distributed Bragg reflector layer on the backplane is larger than a projected area of one light-emitting device on the backplane. | 2019-06-20 |
20190189859 | COVER FOR AN ELECTRONIC CIRCUIT PACKAGE - A cover for an electronic circuit package, including an element having peripheral portions housed in an inner groove of a through opening. | 2019-06-20 |
20190189860 | ELECTRONIC CIRCUIT PACKAGE COVER - An electronic circuit including a cover crossed by an element and having a planar main inner surface. | 2019-06-20 |
20190189861 | OPTICAL SEMICONDUCTOR APPARATUS AND METHOD OF MANUFACTURING OPTICAL SEMICONDUCTOR APPARATUS - A light emitting apparatus includes: a package substrate; a light emitting device housed in a recess of the package substrate; a window member provided to cover an opening of the recess; and a sealing structure that seals a space between the package substrate and the window member. The window member includes a glass plate having an inner surface that faces the optical semiconductor device and a frame body provided on the inner surface of the glass plate. The sealing structure includes a first metal layer provided on a top surface of the package substrate, a second metal layer provided on a bottom surface and an inner circumferential surface of the frame body, and a metal bonding part provided between the first and second metal layers, at least a portion of the metal bonding part being provided on the inner circumferential surface. | 2019-06-20 |
20190189862 | OPTICAL SEMICONDUCTOR APPARATUS AND METHOD OF MANUFACTURING OPTICAL SEMICONDUCTOR APPARATUS - An optical semiconductor apparatus includes: a package substrate that includes a recess that opens on a top surface of the package substrate; a light emitting device housed in the recess; a window member provided to cover an opening of the recess; and a sealing structure that seals a space between the package substrate and the window member. The sealing structure includes a first metal layer provided in a shape of a frame on the top surface of the package substrate, a second metal layer provided in a shape of a frame on an inner surface of the window member, and a metal bonding part provided between the first metal layer and the second metal layer. An entirety of one of the first and second metal layers is positioned in a region where the other of the first and second metal layers is provided. | 2019-06-20 |
20190189863 | WAVELENGTH-CONVERTING FILM AND SEMICONDUCTOR LIGHT EMITTING APPARATUS HAVING THE SAME - A wavelength-converting film includes a sintered body formed of a mixture of a wavelength-converting material and a glass composition. The wavelength-converting material includes a quantum dot having a core-shell structure and a protective layer coating a surface of the quantum dot. A shell of the quantum dot contains at least one of Zn, S, and Se, the protective layer does not contain S and Se, and the glass composition includes a SnO | 2019-06-20 |
20190189864 | DISPLAY DEVICE AND LIGHT SOURCE MODULE THEREOF - A light source module includes a lighting structure, a light diffusing layer, a wavelength converting layer, and a cover plate. The lighting structure includes a plurality of light emitting elements that are all blue-light emitting elements. The light diffusing layer is disposed on the lighting structure, the wavelength converting layer is disposed on the light diffusing layer, and the cover plate is disposed on the wavelength converting layer. | 2019-06-20 |
20190189865 | MONOLITHIC LED ARRAY STRUCTURE - A wavelength converting layer is partially diced to generate a first and second wavelength converting layer segment and to allow partial isolation between the first segment and the second segment such that the wavelength converting layer segments are connected by a connecting wavelength converting layer. The first and second wavelength converting layer segments are attached to a first and second light emitting device, respectively to create a first and second pixel. The connecting wavelength converting layer segment is removed to allow complete isolation between the first pixel and the second pixel. An optical isolation material is applied to exposed surfaces of the first and second pixel and a sacrificial portion of the wavelength converting layer segments and optical isolation material attached to the sacrificial portion is removed from a surface facing away from the first light emitting device, to expose a emitting surface of the first wavelength converting layer segment. | 2019-06-20 |
20190189866 | SEMICONDUCTOR DEVICE - A semiconductor device includes a semiconductor element, a base body, a conductive adhesive member, and a sealing member. The semiconductor element includes a substrate, a semiconductor element structure provided on the substrate, and p-electrode and n-electrode provided on the semiconductor element structure. The semiconductor element is disposed on the base body. The conductive adhesive member electrically connects the p-electrode and the n-electrode to the base body. The sealing member is provided to cover the semiconductor element on an upper surface of the base body. The conductive adhesive member contains particles selected from a group of (i) surface-treated particles having a particle diameter of 1 nm or more and 100 μm or less and (ii) particles that coexist with a dispersing agent. | 2019-06-20 |
20190189867 | LIGHT EMITTING DIODE MODULE FOR SURFACE MOUNT TECHNOLOGY AND METHOD OF MANUFACTURING THE SAME - An LED is provided to include: a first conductive type semiconductor layer; an active layer positioned over the first conductive type semiconductor layer; a second conductive type semiconductor layer positioned over the active layer; and a defect blocking layer comprising a masking region to cover at least a part of the top surface of the second conductive semiconductor layer and an opening region to partially expose the top surface of the second conductive type semiconductor layer, wherein the active layer and the second conductive type semiconductor layer are disposed to expose a part of the first conductive type semiconductor layer, and wherein the defect blocking layer comprises a first region and a second region surrounding the first region, and a ratio of the area of the opening region to the area of the masking region in the first region is different from a ratio of the area of the opening region to the area of the masking region in the second region. | 2019-06-20 |
20190189868 | LIGHT EMITTING DEVICE AND METHOD FOR MANUFACTURING THE SAME - A method for manufacturing a light emitting device includes: preparing a wavelength conversion member; preparing a light emitting element comprising a pair of electrodes at a second face side of the light emitting element; forming a light transmissive member, which includes: disposing a liquid resin material on a second main face of the wavelength conversion member, disposing the light emitting element on the liquid resin material such that (i) a first face of the light emitting element is opposed to the second main face of the wavelength converting member, (ii) a portion of a first lateral face of the light emitting element and a portion of a second lateral face of the light emitting element are covered by the liquid resin material, and (iii) a first corner of the light emitting element is exposed from the liquid resin material, and curing the liquid resin material; and forming a covering member. | 2019-06-20 |
20190189869 | PACKAGING METHOD AND PACKAGE STRUCTURE OF QLED DEVICE - The present disclosure provides a packaging method and a package structure of a QLED device. The packaging method of the QLED device forming a thin film encapsulation layer in which a plurality of inorganic barrier layers and at least one organic buffer layer are arranged alternately on a QLED device to seal the QLED device against water and oxygen, and the organic buffer layer is further doped with a thermal conducting material, so that the heat generated by the QLED device can be promptly transmitted through the thin film encapsulation layer to improve the heat dissipation of the thin film encapsulation layer, thereby improving the light extraction efficiency and the service life of the QLED device. | 2019-06-20 |
20190189870 | OPTICAL SEMICONDUCTOR APPARATUS AND METHOD OF MANUFACTURING OPTICAL SEMICONDUCTOR APPARATUS - A light emitting apparatus includes: a package substrate that includes a recess that opens on a top surface of the package substrate; a light emitting device housed in the recess; a window member provided to cover an opening of the recess; and a metal bonding part that seals a space between the package substrate and the window member. The package substrate includes a packaging surface on which the light emitting device is mounted and a metal electrode is provided, an isolation surface provided in a shape of a frame on an outer side of the packaging surface, and a light reflection surface sloping from the isolation surface toward the top surface, and a metal layer is provided on the light reflection surface with a clearance from the isolation surface. | 2019-06-20 |
20190189871 | METHOD OF PRODUCING A LIGHTING DEVICE - A method of producing a lighting device includes a radiation-emitting optoelectronic component, including: arranging the component on a carrier, applying a first layer on the carrier, wherein the first layer surrounds the component at least laterally in the form of a circumferential frame, and subsequently applying a second layer on the first layer laterally next to the frame, wherein the second layer includes a greater hardness than the first layer. | 2019-06-20 |
20190189872 | ELECTRONIC DEVICE AND METHOD FOR FABRICATING THE SAME - The present invention provides an electronic device and a method for fabricating the same. The electronic device includes a driving-circuit substrate, light-emitting elements, an optical layer, and an adhesive layer. The light-emitting elements are disposed on the driving-circuit substrate, and the optical layer is disposed on the light-emitting elements. The adhesive layer is disposed between the optical layer and the light-emitting elements. The optical layer includes a first surface and a second surface that are opposite to each other. The first surface of the optical layer has a plurality of first convex lens structures, and at least a part of the first convex lens structures are at least partially overlapped with the light-emitting elements in the vertical projection direction. | 2019-06-20 |
20190189873 | MICRO LIGHTING DEVICE - A micro lighting device includes a substrate, an isolation layer formed on the substrate, a side-emission micro device, and a switching device. The side-emission micro device includes a first electrode, a second electrode and an emission surface. The side-emission micro device is disposed in a way so that the emission surface is perpendicular or parallel to the surface of the substrate. The switching device includes a first end, a second end coupled to the first electrode, and a control end. | 2019-06-20 |
20190189874 | Device with Semiconductor Chips on a Primary Carrier - A device with semiconductor chips on a primary carrier is disclosed. In an embodiment a device includes a primary carrier, a plurality of semiconductor chips arranged on the primary carrier, a radiation conversion material arranged at least in places on the semiconductor chips and the primary carrier, a secondary carrier to which the primary carrier is attached and a scattering body arranged on a front side of the secondary carrier facing the primary carrier, the scattering body covering the semiconductor chips, wherein the primary carrier is formed reflective to primary radiation at least in a region of the semiconductor chips, and wherein, during operation of the device, at least secondary radiation exits through a front side of the scattering body facing away from the secondary carrier and through a rear side of the secondary carrier facing away from the primary carrier. | 2019-06-20 |
20190189875 | LED FRAME AND MANUFACTURING METHOD THEREOF - An LED frame including a ceramic substrate, a copper circuit layer, a copper electrode layer and a gold coating is provided. The copper circuit layer is disposed on a surface of the ceramic substrate. The copper electrode layer covers only a part of the copper circuit layer. The reflective insulation structure covers the other parts of the ceramic substrate and the copper circuit layer, and a top of the reflective insulation structure and a top of the copper electrode layer are arranged coplanar. The gold coating entirely covers a top of the copper electrode layer, the gold coating protrudes from the top of the reflective insulation structure and a border of the gold coating coincides with a border of the copper electrode layer. | 2019-06-20 |
20190189876 | LIGHT EMITTING DEVICE PACKAGE AND DISPLAY DEVICE USING THE SAME - A light emitting device package including a cell array including first, second and third light emitting devices each including a first conductivity-type semiconductor layer, an active layer, and a second conductivity-type semiconductor layer, the cell array having a first surface and a second surface opposing the first surface, a light-transmissive substrate including a first wavelength conversion portion and a second wavelength conversion portion corresponding to the first light emitting device and the second light emitting device, respectively, and bonded to the first surface, and a eutectic bonding layer including a first light emitting window, a second light emitting window and a third light emitting window corresponding to the first light emitting device, the second light emitting device and the third light emitting device, respectively, and bonding the light-transmissive substrate and the first to third light emitting devices to each other may be provided. | 2019-06-20 |
20190189877 | LIGHT EMITTING DEVICE PACKAGE - A light emitting device package includes a package substrate and a submount on the package substrate. An upper surface of the submount includes a central region, first and second base regions spaced from the package substrate, relative to the central region, and a sloped region between the central region and the first and second base regions. A light emitting device chip is in the central region. A first electrode layer is between the central region and the light emitting device chip and extends onto the sloped region and the first base region. A second electrode layer is between the central region and the light emitting device chip, extends onto the sloped region and the second base region, and is spaced apart from the first electrode layer. First and second reflective layers are on the first and second electrode layers, respectively, and overlap the sloped region. | 2019-06-20 |
20190189878 | SEMICONDUCTOR LIGHT-EMITTING DEVICE - A semiconductor light-emitting device includes a substrate having a base, a conductive layer and an insulating layer, a semiconductor light-emitting element and a resin member. The base has a pair of base first side surfaces and a pair of base third side surfaces. The conductive layer includes a front-surface segment and a side-surface segment. The front surface segment includes a front-surface first part. The insulating layer includes an insulating-layer first part and an insulating-layer second part. The resin member covers the insulating-layer first part and the insulating-layer second part of the insulating layer. A first thickness of the insulating-layer first part is greater than a second thickness of the insulating-layer second part. | 2019-06-20 |
20190189879 | SEGMENTED LED WITH EMBEDDED TRANSISTORS - A device may include a substrate having a first embedded transistor in a first region and a second embedded transistor in a second region. The first region and the second region may be separated by trench extending through at least a portion of an epitaxial layer formed on the substrate. The first embedded transistor may be connected to a first light emitting diode (LED) and the second embedded transistor may be connected to a second LED. A first optical isolation layer may be between the epitaxial layer and the first region of the substrate. A second optical isolation layer may be between the epitaxial layer and the second region of the substrate. | 2019-06-20 |
20190189880 | LED PACKAGE STRUCTURE, HEAT-DISSIPATING SUBSTRATE, AND METHOD FOR MANUFACTURING HEAT-DISSIPATING SUBSTRATE - The present disclosure discloses a light emitting diode (LED) package structure, a heat-dissipating substrate, and a method for manufacturing a heat-dissipating substrate. The heat-dissipating substrate includes a first heat-dissipating block, a heat-dissipating plate and a second heat-dissipating block, spaced apart each other, and a lateral insulating member connected to thereof so as to electrically isolate the first heat-dissipating block, the second heat-dissipating block, and the heat-dissipating plate from each other. The first heat-dissipating block, the second heat-dissipating block, and the heat-dissipating plate each has two protrusions respectively formed on two opposite surfaces thereof. A height of each of the protrusions is at a micro level. | 2019-06-20 |
20190189881 | SEMICONDUCTOR MODULE - A semiconductor module includes: a semiconductor element; a wiring substrate on which the semiconductor element is mounted; a heat dissipation substrate; a first metal material that bonds the wiring substrate and the heat dissipation substrate; and a second metal material that bonds the wiring substrate and the heat dissipation substrate and has a different melting point from the first metal material. Each of the following is at least partially bonded: the first metal material and the wiring substrate, the first metal material and the heat dissipation substrate, the second metal material and the wiring substrate, the second metal material and the heat dissipation substrate, and the first metal material and the second metal material. Each of the following is bonded by alloying: the first metal material and the wiring substrate, the first metal material and the heat dissipation substrate, and the first metal material and the second metal material. | 2019-06-20 |
20190189882 | THERMAL ENERGY APPARATUS AND RELATED METHODS - An energy harvesting apparatus may include a thermoelectric device, a heat exchanger coupled to the thermoelectric device, a thermal capacitor container, and a thermal capacitor generation device. The thermal capacitor generation device may be configured to generate a thermal capacitor fluid, to be contained in the thermal capacitor container. An electrical energy storage device may be electrically connected to the thermoelectric device, to store electricity generated by the thermoelectric device. | 2019-06-20 |
20190189883 | THERMOELECTRIC CONVERSION MATERIAL, THERMOELECTRIC CONVERSION DEVICE, POWDER FOR THERMOELECTRIC CONVERSION MATERIAL, AND METHOD FOR PRODUCING THERMOELECTRIC CONVERSION MATERIAL - A thermoelectric material of the present invention includes copper, tin, and sulfur, wherein a ratio A/B of the number A of copper atoms to the number B of tin atoms is 0.5 to 2.5 and a content of a metal element other than copper and tin is 5 mol % or less with respect to total metal elements. Additionally, the thermoelectric material of the present invention has a thermal conductivity less than 1.0 W/(m·K) at 200 to 400° C. | 2019-06-20 |
20190189884 | THERMOELECTRIC COMPOSITE MATERIAL COMPRISING MXENE AND METHOD FOR MANUFACTURING THE SAME - A thermoelectric composite material includes MXene inserted at a boundary of a crystal grain consisting of a thermoelectric material. Accordingly, the thermoelectric composite material may have a reduced thermal conductivity and an increased electrical conductivity. Furthermore, a mechanical property of the thermoelectric composite material may be improved. Thus, the thermoelectric composite material may improve a thermoelectric ability of a thermoelectric module. | 2019-06-20 |
20190189885 | THERMOELECTRIC GENERATOR - Aspects of the invention described herein relate to thermoelectric generator devices and uses thereof. Preferred aspects include thermoelectric generator devices that have a base including an air inlet, a housing having a first end connected to the base and a second end opposite the first end, a cap connected to the second end of the housing and including an air outlet, a heat source connected to the base, a thermoelectric module positioned between the heat source and the second end of the housing, wherein the thermoelectric module includes a hot side heat sink; and a cold side heat sink; and a heat shield assembly including an outlet wall extending between the hot side heat sink and the second end of the housing, wherein the outlet wall having an outlet aperture configured to permit passage of air from the hot side heat sink to the second end of the housing; and an inlet wall positioned between the hot side heat sink and the first end of the housing, the inlet wall connected to one or both of the outlet wall and the hot side heat sink, the inlet wall configured to direct hot air from the heat source to the hot side heat sink and to direct hot air away from the cold side heat sink. | 2019-06-20 |
20190189886 | POWER SUPPLYING DEVICE AND HEATING SYSTEM - A power supplying device and a heating system are disclosed. The power supplying device includes a first base, a thermoelectric transmitting module, a conducting circuit, and a second base. The first base has a first flow path and a supporting surface. The thermoelectric transmitting module is disposed on the supporting surface. The conducting circuit is disposed on the supporting surface and electrically connected to the thermoelectric transmitting module. At least one portion of a projection of the first flow path to the supporting surface overlaps the conducting circuit. The second base is stacked on the thermoelectric transmitting module, and the thermoelectric transmitting module is positioned between the first base and the second base. The heating system includes the power supplying device and a heater powered by the power supplying device. | 2019-06-20 |
20190189887 | THERMOELECTRIC MODULE AND METHOD FOR MANUFACTURING THE SAME - A thermoelectric module includes: an electrode; a double layer stacked on a thermoelectric pellet; and a solder layer interposed between the double layer and the electrode to bond the double layer to the electrode, the solder layer containing a Sn—Cu-based alloy. The solder layer is formed to have an interface with one of the double layer and the electrode and has at least one ε layer having an ε phase (Cu | 2019-06-20 |
20190189888 | Fabrication of High-Temperature Superconducting Striated Tape Combinations - This disclosure teaches methods for making high-temperature superconducting striated tape combinations and the product high-temperature superconducting striated tape combinations. This disclosure describes an efficient and scalable method for aligning and bonding two superimposed high-temperature superconducting (HTS) filamentary tapes to form a single integrated tape structure. This invention aligns a bottom and top HTS tape with a thin intervening insulator layer with microscopic precision, and electrically connects the two sets of tape filaments with each other. The insulating layer also reinforces adhesion of the top and bottom tapes, mitigating mechanical stress at the electrical connections. The ability of this method to precisely align separate tapes to form a single tape structure makes it compatible with a reel-to-reel production process. | 2019-06-20 |
20190189889 | PIEZOELECTRIC ARTICLE WITH DIELECTRIC LAYER AND CO-PLANAR ELECTRODES - A composite article has 1) a dry piezoelectric layer comprising a piezoelectric material, 2) a dry dielectric layer arranged contiguously with at least one of the opposing surfaces of the dry piezoelectric layer, and 3) a pair of non-electrically-connected co-planar patterned electrodes. The dry dielectric layer has essentially (a′) a dielectric material; and (b) particles having a Young's modulus that is different from the Young's modulus of the (a′) dielectric material by at least 10%. | 2019-06-20 |
20190189890 | PIEZOELECTRIC CAPACITOR WITH CO-PLANAR PATTERNED ELECTRODES - A piezoelectric capacitor is designed with A) a composite article that has: 1) a first dry piezoelectric layer; and 2) a first pair of non-electrically-connected co-planar patterned electrodes that are arranged contiguously with at least one opposing surface of the dry piezoelectric layer. At least one of the non-electrically-connected co-planar patterned electrodes has (a) an electrically-conductive material; and (b) particles having a Young's modulus that is different from the Young's modulus of the (a) electrically-conductive material by at least 10%. The piezoelectric capacitor also has B) electrical communication means attached to each of the first pair of non-electrically-connected co-planar patterned electrodes for electrical communication of the composite article with an external circuit. | 2019-06-20 |
20190189892 | COMPOSITE ARTICLE WITH CO-PLANAR ELECTRODES - A composite article has 1) a dry piezoelectric layer, and 2) a pair of non-electrically-connected co-planar patterned electrodes that are arranged contiguously with an opposing surface of the dry piezoelectric layer. Each electrode essentially has (a) an electrically-conductive material; and (b) particles having a Young's modulus that is different from the Young's modulus of the (a) electrically-conductive material by at least 10%. | 2019-06-20 |
20190189893 | PIEZOELECTRIC CAPACITOR - A piezoelectric capacitor includes A) a composite article that has 1) a dry piezoelectric layer (dry PL); 2) a first dry electrode comprising a dry electrically-conductive layer arranged contiguously with a first opposing surface of the dry PL; and 3) a second dry electrode arranged contiguously with a second opposing surface of the dry PL. The dry electrically-conductive layer has essentially (a) an electrically-conductive material; and (b) particles having a Young's modulus that is different from the Young's modulus of the (a) electrically-conductive material by at least 10%. The capacitor also has B) electrical communication means attached to both electrodes for electrical communication of the composite article with an external electrical circuit. | 2019-06-20 |
20190189894 | INERTIAL PIEZOELECTRIC CAPACITOR WITH CO-PLANAR PATTERNED ELECTRODES - An inertial piezoelectric device has: A) piezoelectric capacitor having: 1) a substrate; 2) a dry piezoelectric layer; and 3) a first pair of non-electrically-connected co-planar patterned electrodes that are arranged contiguously with an opposing surface of the first dry PL. The non-electrically-connected co-planar patterned electrodes consist essentially of: (a) an electrically-conductive material; and (b) particles having a Young's modulus that is different from the Young's modulus of the (a) electrically-conductive material by at least 10%. The device also has B) signal processing electronics in electrical communication with the piezoelectric capacitor; C) a means for converting all or a portion of an applied force to an inertial force that is transmitted to the first dry PL; and optionally D) a proof mass that is contiguous with at least one external surface of the piezoelectric capacitor. | 2019-06-20 |
20190189895 | Multilayer Component - A multilayer component is disclosed. In an embodiment, a multilayer component includes a fully active stack comprising a plurality of dielectric layers, internal electrodes and two external electrodes arranged on opposite sides of the stack, wherein at least one portion of the internal electrode layers are coated. | 2019-06-20 |
20190189896 | PIEZOELECTRIC ACTUATOR - A piezoelectric actuator is formed like a rectangular flat plate, and includes a substrate layer, a lower electrode layer, a piezoelectric layer, and an upper electrode layer formed in this order from bottom to top in a thickness direction. The upper electrode layer is constituted of a plurality of electrode segments separated in a surface direction, and connection wires connecting the electrode segments which are adjoining in the surface direction. | 2019-06-20 |
20190189897 | PIEZOELECTRIC DEVICES WITH OBLIQUELY ALIGNED ELECTRODES - Single bulk unimorph piezoelectric elements, with interdigitated electrodes aligned obliquely relative to the direction perpendicular to the axis of the element, such that a torsional response is induced into the element. When such elements are used as a beam structure, with angularly oriented electrodes on both opposite surfaces of the beam, and with their orientations at mutually opposite angles, motion ranging from pure torsional rotation to pure bending can be obtained, depending on the comparative level and polarity of the voltages applied to each of the two electrode sets. If such elements are used as the spiral support arms of a central platform, a large displacement of the stage can be achieved. Due to the oblique orientation of the IDE's, the piezoelectric transduction induces torsional deformation in the spirals, and this torsion is converted by the spiral arms to a parallel out-of-plane platform motion. | 2019-06-20 |
20190189898 | KINETIC PIEZOELECTRIC CAPACITOR WITH CO-PLANAR PATTERNED ELECTRODES - A kinetic piezoelectric device is designed with: A) piezoelectric capacitor that has: 1) a substrate; 2) a first dry piezoelectric layer (first dry PL) comprising a piezoelectric material and having first and second opposing surfaces; and 3) a first pair of non-electrically-connected co-planar patterned electrodes that are arranged contiguously with at least one of the first and second opposing surfaces of the first dry PL. At least one of the first pair of non-electrically-connected co-planar patterned electrodes consists essentially of: (a) an electrically-conductive material; and (b) particles having a Young's modulus that is different from the Young's modulus of the (a) electrically-conductive material by at least 10%. The device also has B) signal processing electronics in electrical communication with the piezoelectric capacitor; and C) a means for transmitting all or a portion of an applied force directly to the first dry PL. | 2019-06-20 |
20190189899 | KINETIC PIEZOELECTRIC DEVICE - A kinetic piezoelectric device has: A) piezoelectric capacitor having a substrate; a first dry piezoelectric layer comprising a piezoelectric material; 3) a first electrode; and 4) a second electrode. The first electrode has (a) an electrically-conductive material; and (b) particles having a Young's modulus that is different from the Young's modulus of the (a) electrically-conductive material by at least 10%. The device also has B) signal processing electronics in electrical communication with the piezoelectric capacitor; C) a means for transmitting all or a portion of an applied force to the first dry PL; and optionally D) a proof mass that is contiguous with at least one external surface of the piezoelectric capacitor. | 2019-06-20 |
20190189900 | INERTIAL PIEZOELECTRIC DEVICE - An inertial piezoelectric device has: A) piezoelectric capacitor having a substrate; 2) a dry piezoelectric layer comprising a piezoelectric material; 3) a first electrode arranged contiguously with one opposing surface of the dry PL; and 4) a second electrode arranged contiguously with a second opposing surface of the first dry PL. The first dry electrically-conductive layer consists essentially of: (a) an electrically-conductive material; and (b) particles having a Young's modulus that is different from the Young's modulus of the (a) electrically-conductive material by at least 10%. The device also has B) signal processing electronics in electrical communication with the piezoelectric capacitor; C) a means for converting all or a portion of an applied force to an inertial force that is transmitted to the first dry PL; and optionally D) a proof mass that is contiguous with at least one external surface of the piezoelectric capacitor. | 2019-06-20 |
20190189901 | SENSOR ASSEMBLY FOR GAS TURBINE ENGINES - A sensor assembly for a gas turbine engine according to an example of the present disclosure includes, among other things, a substrate layer formed on a localized surface of a rotatable gas turbine engine component, and at least one pair of transducers deposited on the substrate layer. | 2019-06-20 |
20190189902 | PIEZOELECTRIC COMPOSITE ARTICLES - A composite article is designed for use in various devices and to exhibit improved piezoelectric effects. The composite article has 1) a dry piezoelectric layer (first dry PL) comprising a piezoelectric material, and 2) a dry electrically-conductive layer arranged contiguously with an opposing surface of the first dry PL. The dry electrically-conductive layer essentially has (a) an electrically-conductive material; and (b) particles having a Young's modulus that is different from the Young's modulus of the (a) electrically-conductive material by at least 10%, and which (b) particles have a d50 of at least 500 nm and up to and including 500 μm and a polydispersity coefficient that is less than or equal to 3. The weight ratio of the (b) particles to the (a) electrically-conductive material is at least 0.01:1 and up to and including 10:1. | 2019-06-20 |
20190189903 | COMPOSITE ARTICLES WITH DIELECTRIC LAYER - A composite article useful in various electronic devices has 1) a dry piezoelectric layer (first dry PL) comprising a piezoelectric material, and 2) one or more dry dielectric layers arranged contiguously with opposing surfaces of the first dry PL. The dry dielectric layer has essentially: (a′) a dielectric material; and (b) particles having a Young's modulus that is different from the Young's modulus of the (a′) dielectric material by at least 10%. The (b) particles have a d50 of at least 500 nm and up to and including 500 m and a polydispersity coefficient that is less than or equal to 3, provided that the weight ratio of the (b) particles to the (a′) dielectric material is at least 0.01:1 and up to and including 10:1. | 2019-06-20 |
20190189904 | METHOD FOR PROVIDING PIEZOELECTRIC DEVICES - A piezoelectric device can be provided by: A) providing a first dry piezoelectric layer (first dry PL) comprising a dielectric material and having first and second opposing surfaces; and B) providing a first dry electrically-conductive layer (first dry ECL-P) that is arranged contiguously with the first opposing surface of the first dry PL. The first dry ECL-P has (a) an electrically-conductive material; and (b) particles distributed within the (a) electrically-conductive material, the (b) particles having a Young's modulus that is different from the Young's modulus of the (a) electrically-conductive material by at least 10%, and which (b) particles have a d50 of at least 500 nm and up to and including 500 μm and a polydispersity coefficient that is less than 3. The weight ratio of the (b) particles to the (a) electrically-conductive material is at least 0.01:1 and up to and including 10:1. | 2019-06-20 |
20190189905 | SILVER-CONTAINING ELECTRICALLY-CONDUCTIVE COMPOSITIONS - An electrically-conductive composition essentially has (a) an electrically-conductive material consisting essentially of silver nanoparticles that have a d50 of less than or equal to 60 μm and a d90 of less than or equal to 500 μm; (b) particles having a Young's modulus that is different from the Young's modulus of the (a) electrically-conductive material by at least 10%, which (b) particles have a d50 of 500 nm to 300 μm and a polydispersity coefficient of less than or equal to 3; (c) a binder material that is non-electrically-conductive; and (d) a solvent medium in an amount of less than or equal to 90 weight %, based on the total composition weight, which solvent medium is at least 50 weight % water. The weight ratio of the (b) particles to the (a) electrically-conductive material is at least 0.01:1 and up to and including 7:1. | 2019-06-20 |
20190189906 | MAGNETIC MEMORY DEVICE AND METHOD FOR FABRICATING THE SAME - A magnetic memory device includes a substrate, a tunnel barrier pattern on the substrate, a first magnetic pattern and a second magnetic pattern spaced apart from each other with the tunnel barrier pattern therebetween, and a short preventing pattern spaced apart from the tunnel barrier pattern with the second magnetic pattern therebetween. The short preventing pattern includes at least two oxide layers and at least two metal layers, which are alternately stacked. | 2019-06-20 |
20190189907 | ELECTRONIC DEVICE AND METHOD FOR FABRICATING THE SAME - This technology provides a method for fabricating an electronic device. A method for fabricating an electronic device including a variable resistance element, which includes a free layer having a variable magnetization direction; a pinned layer having a first non-variable magnetization direction, and including first ferromagnetic materials and a first spacer layer interposed between adjacent two first ferromagnetic materials among the first ferromagnetic materials; a tunnel barrier layer interposed between the free layer and the pinned layer; a magnetic correction layer having a second magnetization direction which is anti-parallel to the first magnetization direction; and a third spacer layer interposed between the magnetic correction layer and the pinned layer, and providing an anti-ferromagnetic exchange coupling between the magnetic correction layer and the pinned layer. | 2019-06-20 |
20190189908 | Heterostructures for Electric Field Controlled Magnetic Tunnel Junctions - In various embodiments, magnetic heterostructures and magnetic layers can be implemented and configured to provide electric field controlled magnetic tunnel junctions. Such magnetic heterostructures and magnetic layers can incorporate a variety of different materials and layers for various effects. In many embodiments, the magnetic heterostructures incorporate hybrid seed layers. Such layers can be incorporated for various reasons including but not limited to producing an enhanced voltage controlled magnetic anisotropy (“VCMA”) effect. The VCMA effect can be explained in terms of the electric-field-induced change of occupancy of atomic orbitals at the interface, which, in conjunction with spin-orbit interaction, results in a change of anisotropy. In some embodiments, the magnetic heterostructures and layers incorporate free layer insertions. In a number of embodiments, the magnetic heterostructures incorporate a material insertion at the interface of the tunneling barrier and the free layer. | 2019-06-20 |
20190189909 | MAGNETIC MEMORY - A magnetic memory including a plurality of magnetoresistance effect elements that hold information, each including a first ferromagnetic metal layer with a fixed magnetization direction, a second ferromagnetic metal layer with a varying magnetization direction, and a non-magnetic layer sandwiched between the first and second ferromagnetic metal layers; a plurality of first control elements that control reading of the information, wherein each of the plurality of first ferromagnetic metal layers is connected to a first control element; a plurality of spin-orbit torque wiring lines that extend in a second direction intersecting with a first direction which is a stacking direction of the magnetoresistance effect elements, wherein each of the second ferromagnetic metal layers is joined to one spin-orbit torque wiring line; a plurality of second control elements that control electric current flowing through the spin-orbit torque wiring lines. | 2019-06-20 |
20190189910 | Low Resistance MgO Capping Layer for Perpendicularly Magnetized Magnetic Tunnel Junctions - A magnetic tunnel junction (MTJ) is disclosed wherein a free layer (FL) interfaces with a first metal oxide (Mox) layer and second metal oxide (tunnel barrier) to produce perpendicular magnetic anisotropy (PMA) in the FL. In some embodiments, conductive metal channels made of a noble metal are formed in the Mox that is MgO to reduce parasitic resistance. In a second embodiment, a discontinuous MgO layer with a plurality of islands is formed as the Mox layer and a non-magnetic hard mask layer is deposited to fill spaces between adjacent islands and form shorting pathways through the Mox. In another embodiment, end portions between the sides of a center Mox portion and the MTJ sidewall are reduced to form shorting pathways by depositing a reducing metal layer on Mox sidewalls, or performing a reduction process with forming gas, H | 2019-06-20 |
20190189911 | Fully Compensated Synthetic Ferromagnet for Spintronics Applications - A laminated seed layer stack with a smooth top surface having a peak to peak roughness of 0.5 nm is formed by sequentially sputter depositing a first seed layer, a first amorphous layer, a second seed layer, and a second amorphous layer where each seed layer may be Mg and has a resputtering rate 2 to 30X that of the amorphous layers that are TaN, SiN, or a CoFeM alloy. A template layer that is NiCr or NiFeCr is formed on the second amorphous layer. As a result, perpendicular magnetic anisotropy in an overlying magnetic layer that is a reference layer, free layer, or dipole layer is substantially maintained during high temperature processing up to 400° C. and is advantageous for magnetic tunnel junctions in embedded MRAMs, spintronic devices, or in read head sensors. The laminated seed layer stack may include a bottommost Ta or TaN buffer layer. | 2019-06-20 |
20190189912 | Structures Enabling Voltage Control of Oxidation Within Magnetic Heterostructures - In many embodiments, Gd/GdO materials are incorporated into a magnetic heterostructure between the electrodes, either in contact with the electrodes or within the stack of the heterostructure. In some embodiments, the Gd/GdO materials can be inserted into a single magnetic layer. In several embodiments, the Gd/GdO materials can be inserted within a magnetic tunnel junction stack, i.e., a magnetic structure that includes two ferromagnetic layers separated by an insulating layer. In further embodiments, the Gd/GdO materials are utilized in voltage-controlled magnetic anisotropy-based MTJs (“VMTJs”), which are devices that uses the voltage-controlled magnetic anisotropy (“VCMA”) phenomena to reduce the coercivity of the free layer of the VMTJs to make the free layer more easily switched to the opposite direction (writeable). Gd/GdO materials can also be utilized within a magnetoelectric junction (“MEJ”) structure. | 2019-06-20 |
20190189913 | SPIN TRANSFER TORQUE MEMORY DEVICES HAVING HEUSLER MAGNETIC TUNNEL JUNCTIONS - The present disclosure relates to the fabrication of spin transfer torque memory devices, wherein a magnetic tunnel junction of the spin transfer torque memory device is formed with Heusler alloys as the fixed and free magnetic layers and a tunnel barrier layer disposed between and abutting the fixed Heusler magnetic layer and the free Heusler magnetic layer, wherein the tunnel barrier layer is lattice matched to the free Heusler magnetic layer. In one embodiment, the tunnel barrier layer may be a strontium titanate layer. | 2019-06-20 |
20190189914 | SIDEWALL IMAGE TRANSFER ON MAGNETIC TUNNEL JUNCTION STACK FOR MAGNETORESISTIVE RANDOM-ACCESS MEMORY PATTERNING - A method of forming a semiconductor structure includes forming a first spacer material over two or more mandrels disposed over a magnetoresistive random-access memory (MRAM) stack. The method also includes performing a first sidewall image transfer of the two or more mandrels to form a first set of fins of the first spacer material over the MRAM stack, and performing a second sidewall image transfer to form a plurality of pillars of the first spacer material over the MRAM stack. The pillars of the first spacer material form top electrodes for a plurality of MRAM cells patterned from the MRAM stack. | 2019-06-20 |
20190189915 | SPIN-TRANSFER TORQUE DEVICE - The disclosed technology generally relates semiconductor devices, and relates more particularly to a spin transfer torque device, a method of operating the spin-transfer torque device and a method of fabricating the spin-transfer torque device. According to one aspect, a spin-transfer torque device includes a magnetic flux guide layer and a set of magnetic tunnel junction (MTJ) pillars arranged above the magnetic flux guide layer. Each one of the pillars includes a separate free layer, a separate tunnel barrier layer and a separate reference layer. A coupling layer is arranged between the magnetic flux guide layer and the MTJ pillars, wherein a magnetization of the separate free layer of each of the each of the MTJ pillars is coupled, parallel or antiparallel, to a magnetization of the magnetic flux guide layer through the coupling layer. | 2019-06-20 |
20190189916 | ION BEAM APPARATUSES AND METHODS FOR FORMING PATTERNS USING THE SAME, AND METHODS FOR MANUFACTURING MAGNETIC MEMORY DEVICES USING THE SAME - An ion beam apparatus may include a chamber assembly configured to hold a material and direct an ion beam on the material, a detector configured to detect a signal generated from the material based on the ion beam being directed on the material, and a controller configured to control at least one parameter associated with the chamber assembly based on the signal, such that at least one of an ion energy associated with the ion beam, an ion current associated with the ion beam, and an incident angle of the ion beam with respect to a top surface of the material is changed continuously with time. | 2019-06-20 |
20190189917 | MAGNETIC TUNNEL JUNCTION ELEMENT AND METHOD FOR MANUFACTURING SAME - A magnetic tunnel junction element includes, in a following stack order, an underlayer formed of a metal material, a fixed layer formed of a ferromagnetic body, a magnetic coupling layer formed of a nonmagnetic body, a reference layer formed of a ferromagnetic body, a barrier layer formed of a nonmagnetic body, and a recording layer formed of a ferromagnetic body, or alternatively, the magnetic tunnel junction element includes, in a following stack order, a recording layer formed of a ferromagnetic body, a barrier layer formed of a nonmagnetic body, a reference layer formed of a ferromagnetic body, a magnetic coupling layer formed of a nonmagnetic body, an underlayer formed of a metal material, and a fixed layer formed of a ferromagnetic body, wherein the fixed layer is formed and stacked after performing plasma treatment to a surface of the underlayer having been formed. | 2019-06-20 |
20190189918 | RESISTIVE MEMORY WITH AMORPHOUS SILICON FILAMENTS - A method for manufacturing a semiconductor memory device includes forming a first silicon layer on a bottom conductive layer, transforming the first silicon layer into a first polysilicon layer, forming a second silicon layer stacked on the first polysilicon layer, and a third silicon layer stacked on the second silicon layer, transforming the second and third silicon layers into second and third polysilicon layers, wherein the first and third polysilicon layers have a first doping type, and the second polysilicon layer has a second doping type different from the first doping type, forming an amorphous silicon layer on the third polysilicon layer, and forming a top conductive layer on the amorphous silicon layer. | 2019-06-20 |
20190189919 | RESISTANCE RANDOM ACCESS MEMORY DEVICE AND PREPARING METHOD THEREOF - The present disclosure relates to a resistive random access memory device and a preparing method thereof. | 2019-06-20 |
20190189920 | VARIABLE RESISTANCE MEMORY DEVICE AND METHOD OF MANUFACTURING THE SAME - A variable resistance memory device includes first conductive lines positioned above a substrate. Each of the first conductive lines extends in a first direction and a second direction. Second conductive lines extend in the first direction and the second direction. The second conductive lines are positioned above the first conductive lines. A memory is positioned between the first and second conductive lines. The memory unit overlaps the first and second conductive lines in a third direction. The memory unit includes a first electrode, a variable resistance pattern positioned on the first electrode, and a second electrode positioned on the variable resistance pattern. A selection pattern is positioned on each memory unit. A third electrode is positioned above the selection pattern. The third electrode is in direct contact with a lower surface of each of the second conductive lines. | 2019-06-20 |
20190189921 | ASYMMETRIC CORRELATED ELECTRON SWITCH OPERATION - Subject matter disclosed herein may relate to correlated electron switches that are capable of asymmetric set or reset operations. | 2019-06-20 |
20190189922 | METHOD FOR PRODUCING SEMICONDUCTOR NANOPARTICLE COMPLEX, SEMICONDUCTOR NANOPARTICLE COMPLEX, AND FILM - An object of the present invention is to provide a method for producing a semiconductor nanoparticle complex, which is capable of suppressing aggregation of particles and forming a good coating with an oxide, a semiconductor nanoparticle complex, and a film. The method for producing a semiconductor nanoparticle complex of the present invention is a method for producing a semiconductor nanoparticle complex including a coating step of coating a semiconductor nanoparticle with a silane having a group represented by a predetermined formula to obtain a coated semiconductor nanoparticle; a hydrophilization step of mixing the coated semiconductor nanoparticle with a reverse micelle solution to obtain a reverse micelle solution containing a hydrophilized coated semiconductor nanoparticle; and an oxide-containing layer forming step of forming an oxide-containing layer on the surface of the hydrophilized coated semiconductor nanoparticle by adding an alkoxide to the reverse micelle solution after the hydrophilization step to obtain the semiconductor nanoparticle complex. | 2019-06-20 |
20190189923 | ELECTROLUMINESCENT SUBSTRATE PLATE, METHOD FOR MANUFACTURING THE SAME AND DISPLAY DEVICE - The present disclosure discloses an electroluminescent substrate plate, a method of manufacturing the same, and a display device. The method includes printing an ink comprising a light-emitting layer material and a solvent capable of dissolving the light-emitting layer material in a display region of a substrate; and printing a solvent in a region other than the display region. Thus, the method can easily obtain an electroluminescent substrate plate, and the manufactured electroluminescent substrate plate can satisfy the dry atmosphere consistency of the display region and the peripheral region during the film formation by inkjet printing, can significantly improve the film thickness uniformity of the display region, and at the same time is beneficial to the design requirements of a large size and a narrow frame. | 2019-06-20 |
20190189924 | SYNTHESIS AND INCORPORATION OF GRAPHENE AND/OR METALLIZED OR METAL OXIDE-MODIFIED GRAPHENE TO IMPROVE ORGANIC SOLAR CELLS AND HYDROGEN FUEL CELLS - A composition used to form the active layer of a solar cell or hydrogen fuel cell that comprises, consists of or consists essentially of a homogenous dispersion, poly(3-hexylthiophene-2,5-diyl) (P3HT) and 1-(3-methoxycarbonyl)propyl-1-phenyl[6,6]C | 2019-06-20 |
20190189925 | ORGANIC SEMICONDUCTORS - The invention relates to novel organic semiconducting (OSC) compounds containing one or more 1,3-dithiolo[5,6-f]benzo-2,1,3-thiadiazole (“DTBTz”) or 1,3-dithiolo[6,7-g]quinoxaline (“DTQ”) units or derivatives thereof, to methods for their preparation and educts or intermediates used therein, to compositions and formulations containing them, to the use of the compounds and compositions as organic semiconductors in, or for the preparation of, organic electronic (OE) devices, especially organic photovoltaic (OPV) devices, perovskite-based solar cell (PSC) devices, organic photodetectors (OPD), organic field effect transistors (OFET) and organic light emitting diodes (OLED), and to OE devices comprising these compounds or compositions. | 2019-06-20 |
20190189926 | Coating Composition Comprising Compound, And Organic Light Emitting Device Comprising Same - The present specification relates to a coating composition comprising a compound, and an organic light emitting device comprising the same. | 2019-06-20 |
20190189927 | COMPOUND FOR ORGANIC ELECTRONIC ELEMENT, ORGANIC ELECTRONIC ELEMENT USING SAME, AND ELECTRONIC DEVICE THEREOF - Provided are an organic electric element and an electronic device thereof, the element using a mixture of a compound, of the present invention, as a phosphorescent host material such that high light-emitting efficiency and a low driving voltage of the organic electronic element can be achieved, and the duration of the element can be greatly improved. | 2019-06-20 |
20190189928 | ELECTROLUMINESCENT DEVICE, AND DISPLAY DEVICE COMPRISING THE SAME - An electroluminescent device and a display device includes the same are disclosed. The electroluminescent device includes a first electrode; a hole transport layer disposed on the first electrode and including a first organic material having a conjugated structure; an emission layer disposed directly on the hole transport layer and including a plurality of light emitting particles; an electron transport layer disposed on the emission layer; and a second electrode disposed on the electron transport layer, wherein at least one of the light emitting particles includes a core and a hydrophilic ligand attached to a surface of the core, wherein the hole transport layer has a first thickness and a second thickness at any two point locations, and the first thickness and the second thickness satisfy Equation 1. | 2019-06-20 |
20190189929 | COMPOUND AND ORGANIC LIGHT-EMITTING DEVICE COMPRISING SAME - The present specification provides a compound of Chemical formula 1 and an organic light-emitting device comprising the same. | 2019-06-20 |
20190189930 | ORGANIC ELECTROLUMINESCENT MATERIALS AND DEVICES - A compound selected from the group consisting of | 2019-06-20 |
20190189931 | CONDENSED CYCLIC COMPOUND, COMPOSITION INCLUDING THE CONDENSED CYCLIC COMPOUND, AND ORGANIC LIGHT-EMITTING DEVICE INCLUDING THE COMPOSITION - A condensed cyclic compound represented by Formula 1 and including 9 to 60 aromatic rings: | 2019-06-20 |
20190189932 | TRANSPARENT ELECTRODE AND ELECTRONIC DEVICE - A transparent electrode includes a conductive layer and at least one metal affinity layer adjacent to the conductive layer. The conductive layer is composed of silver as a main component. The metal affinity layer contains an organic compound and a lanthanoid. The organic compound is a compound including a heteroatom having an unshared electron pair in a molecule. | 2019-06-20 |
20190189933 | ORGANIC SEMICONDUCTOR MATERIAL FOR ELECTRON TRANSPORT - One embodiment of the present invention provides an organic semiconductor material for electron transport. The organic semiconductor material for electron transport may have a structure represented by the following Formula 1: | 2019-06-20 |
20190189934 | ORGANIC METAL COMPOUND AND ORGANIC LIGHT-EMITTING DEVICE - Organic metal compounds, and organic light-emitting devices employing the same are provided. The organic metal compound has a chemical structure of Formula (I): | 2019-06-20 |
20190189935 | ORGANIC ELECTROLUMINESCENT MATERIALS AND DEVICES - A compound that includes a ligand L | 2019-06-20 |
20190189936 | LIGHT-EMITTING ELEMENT, DISPLAY DEVICE, ELECTRONIC DEVICE, AND LIGHTING DEVICE - To provide a light-emitting element with high emission efficiency and low driving voltage. The light-emitting element includes a guest material and a host material. A LUMO level of the host material is higher than a LUMO level of the host material, and a HOMO level of the guest material is lower than a HOMO level of the host material. The guest material has a function of converting triplet excitation energy into light emission. The difference between a singlet excitation energy level and a triplet excitation energy level of the host material is greater than 0 eV and less than or equal to 0.2 eV. The energy difference between the LUMO level and the HOMO level of the host material is larger than or equal to light emission energy of the guest material. | 2019-06-20 |
20190189937 | Carbene Metal Complexes as OLED Materials - An organic light emitting device having an anode, a cathode and an organic layer disposed between the anode and the cathode is provided. In one aspect, the organic layer comprises a compound having at least one zwitterionic carbon donor ligand. In another aspect, the organic layer comprises a carbene compound, including the following: | 2019-06-20 |
20190189938 | ORGANIC ELECTROLUMINESCENT MATERIALS AND DEVICES - A compound of the formula ML | 2019-06-20 |
20190189939 | ORGANIC ELECTROLUMINESCENT MATERIALS AND DEVICES - A compound of Formula I | 2019-06-20 |
20190189940 | Free-Form Display - The present disclosure relates to a free-form display that can freely alter its shape by connecting a plurality of micro display elements by a flexible medium. The free-form display comprises a flexible substrate, a plurality of unit pixel substrates, and a flexible medium. The unit pixel substrates are arranged in a matrix on the flexible substrate. The flexible medium fills gaps between the unit pixel substrates. | 2019-06-20 |
20190189941 | DISPLAY APPARATUS AND MANUFACTURING METHOD OF THE SAME - A display apparatus includes a plurality of pixels each including a substrate on which are disposed: an interlayer insulating layer; a driving thin film transistor in which a driving semiconductor layer and a driving gate electrode are each disposed between the substrate and the first interlayer insulating layer; a first capacitor in which a first electrode, a first dielectric pattern and a second electrode are sequentially stacked, the first electrode being connected to the driving gate electrode; and a plurality of contact plugs extended through a thickness of the interlayer insulating layer, with which the driving thin film transistor and the first capacitor are respectively connected to electrodes outside thereof. Lateral surfaces of the first dielectric pattern are covered by the interlayer insulating layer, and the first dielectric pattern within the first capacitor is disposed spaced apart from each of the contact plugs. | 2019-06-20 |
20190189942 | ORGANIC THIN-FILM TRANSISTORS AND METHODS FOR MANUFACTURING THE SAME AND IMAGE DISPLAY DEVICES - An organic thin-film transistor includes an insulating substrate, a capacitor electrode formed on the insulating substrate, a first insulating layer covering the capacitor electrode, a gate electrode formed on the first insulating layer, a second insulating layer covering the gate electrode and the capacitor electrode, a source electrode formed on the second insulating layer, a drain electrode formed on the second insulating layer, and a semiconductor layer formed on the second insulating layer in a portion between the source electrode and the drain electrode and including an organic semiconductor material. | 2019-06-20 |
20190189943 | PHOTOELECTRIC CONVERSION ELEMENT AND METHOD FOR MANUFACTURING PHOTOELECTRIC CONVERSION ELEMENT - According to one embodiment, a photoelectric conversion element includes a photoelectric conversion layer, a first electrode, and a first layer. The photoelectric conversion layer includes a material having a perovskite structure. The first electrode includes polyethylene dioxythiophene. The first layer is provided between the photoelectric conversion layer and the first electrode. The first layer has hole transport properties. The hygroscopicity of the first layer is lower than a hygroscopicity of the photoelectric conversion layer. | 2019-06-20 |
20190189944 | PHOTOELECTRIC CONVERSION ELEMENTS AND SOLAR CELL - Provided is a photoelectric conversion element, including a first electrode that has a photosensitive layer containing a light absorbing agent on a conductive support, in which the light absorbing agent contains a compound having a perovskite-type crystal structure that has an organic cation represented by Formulas (1) and (2), a cation of a metal atom, and an anion; and a solar cell which is formed of this photoelectric conversion element. | 2019-06-20 |
20190189945 | ELECTROLUMINESCENT DEVICE, AND DISPLAY DEVICE COMPRISING THE SAME - An electroluminescent device and a display device including the same are provided. The electroluminescent device includes a first electrode and a second electrode facing each other; an emission layer disposed between the first electrode and the second electrode and including at least two light emitting particles; a hole transport layer disposed between the first electrode and the emission layer; and an electron transport layer disposed between the emission layer and the second electrode and including at least two different organic semiconductor compounds, wherein a first root-mean surface roughness of a surface of the electron transport layer obtained using a laser interferometer is in a range from about 0.5 nanometers to about 3 nanometers. | 2019-06-20 |
20190189946 | ORGANIC LIGHT EMITTING DIODE - An organic light emitting diode, including a first electrode; a second electrode facing the first electrode, the second electrode including magnesium; an emission layer between the first electrode and the second electrode; and an electron injection layer between the second electrode and the emission layer, the electron injection layer including a dipole material including a first component and a second component having different polarities, the dipole material including halide, and a content of the magnesium included in the second electrode being in a range of from 10 to 40 volume %. | 2019-06-20 |
20190189947 | ORGANIC LIGHT-EMITTING DEVICE - An organic light-emitting device includes: a first electrode; a second electrode facing the first electrode; and an organic layer between the first electrode and the second electrode and including an emission layer and a triplet exciton quenching layer. A display apparatus includes a thin film transistor comprising a source electrode, a drain electrode, and an active layer; and the organic light-emitting device, where the first electrode of the organic light-emitting device is electrically coupled to one selected from the source electrode and the drain electrode of the thin film transistor. | 2019-06-20 |
20190189948 | SELF-LIGHT-EMISSIVE DISPLAY DEVICE - The organic EL element ( | 2019-06-20 |
20190189949 | Light-Emitting Element - Provided is a light-emitting element with high external quantum efficiency, or a light-emitting element with a long lifetime. The light-emitting element includes, between a pair of electrodes, a light-emitting layer including a guest material and a host material, in which an emission spectrum of the host material overlaps with an absorption spectrum of the guest material, and phosphorescence is emitted by conversion of an excitation energy of the host material into an excitation energy of the guest material. By using the overlap between the emission spectrum of the host material and the absorption spectrum of the guest material, the energy smoothly transfers from the host material to the guest material, so that the energy transfer efficiency of the light-emitting element is high. Accordingly, a light-emitting element with high external quantum efficiency can be achieved. | 2019-06-20 |
20190189950 | ORGANIC ELECTROLUMINESCENCE DEVICE AND AMINE COMPOUND FOR ORGANIC ELECTROLUMINESCENCE DEVICE - An organic electroluminescence device and an amine compound for an organic electroluminescence device are provided. The amine compound according to an embodiment of the present disclosure is represented by Formula 1. In Formula 1, Ar is a substituted or unsubstituted aryl group having 10 to 60 carbon atoms for forming a ring: | 2019-06-20 |
20190189951 | PACKAGE STRUCTURE, METHOD FOR MANUFACTURING THE SAME, METHOD FOR DETECTING PACKAGE DEFECT, OLED DEVICE AND DISPLAY APPARATUS - The present application provides a package structure, a method for manufacturing the same, a method for detecting a package defect in the package structure, an OLED device, and a display apparatus. The package structure includes: a first cover plate and a second cover plate; a sealant disposed between the first cover plate and the second cover plate and configured to form a sealed space with the first cover plate and the second cover plate; a moisture detection portion located in the sealed space; a first electrode having one terminal connected to a portion of the moisture detection portion, and the other terminal extending beyond the sealed space; and a second electrode having one terminal connected to another portion of the moisture detection portion, and the other terminal extending beyond the sealed space. | 2019-06-20 |
20190189952 | LIGHT-EMITTING DEVICE - A substrate ( | 2019-06-20 |
20190189953 | ORGANIC LIGHT EMITTING DIODE ASSEMBLY, LIGHT SOURCE, AND METHOD OF FABRICATING ORGANIC LIGHT EMITTING DIODE ASSEMBLY - The present application discloses an organic light emitting diode assembly. The organic light emitting diode assembly includes a first base substrate; an organic light emitting diode on the first base substrate; and a second base substrate on a side of, the organic light emitting diode distal to the first base substrate. The organic light emitting diode and the second base substrate are spaced apart from each other by a tunable gap. A gap distance of the tunable gap is tunable such that a color of light emitted from the organic light emitting diode assembly is tunable in response to a change in the gap distance. | 2019-06-20 |
20190189954 | DISPLAY DEVICE - A display device includes: a plurality of pixel electrodes; a first carrier injection layer, a first carrier transport layer, a light-emitting layer, a second carrier transport layer, and a second carrier injection layer provided in order on the plurality of pixel electrodes; and a counter electrode provided on the second carrier injection layer. The second carrier has a polarity opposite to that of the first carrier. The counter electrode is connected to one layer of the first carrier transport layer and the first carrier injection layer, penetrating a layer situated between the one layer and the counter electrode, between the pixel electrodes adjacent to each other in a plan view. Alternatively, an upper surface of an intermediate electrode situated between the pixel electrodes adjacent to each other in a plan view is connected to the first carrier injection layer. | 2019-06-20 |
20190189955 | ORGANIC EL DISPLAY DEVICE - An organic EL display device according to an embodiment of the present invention includes: a base material; a plurality of pixels; a lower electrode which each of the plurality of pixels is provided with; an organic insulation layer which sections the plurality of pixels; an organic material layer which is disposed on the lower electrode and the organic insulation layer, and includes a plurality of layers; and an upper electrode on the organic material layer. A level difference part is positioned on an upper surface of the organic insulation layer, a first layer included in the organic material layer is divided at the level difference part, or has a thin part being thinner at the level difference part than at a position at which the first layer faces the lower electrode, and a second layer included in the organic material layer is not divided at the level difference part. | 2019-06-20 |
20190189956 | Lighting Device and Display Apparatus - A lighting device includes a substrate having a light emitting area and a non-light emitting area surrounding the light emitting area, a light emitting part in the light emitting area, a first inorganic layer on the light emitting part and the non-light emitting area, a first organic layer on the first inorganic layer overlapping the light emitting part, a second inorganic layer on the first organic layer, a protruding part on the first inorganic layer of the non-light emitting area, and a cover layer on the protruding part. | 2019-06-20 |