25th week of 2022 patent applcation highlights part 77 |
Patent application number | Title | Published |
20220199683 | DISPLAY DEVICE - A display device is provided. The display device includes a first electrode including a first electrode surface extending in a first direction and a second electrode surface connected to one end of the first electrode surface and extending in a second direction that is different from the first direction, a second electrode including a third electrode surface extending in the first direction and spaced apart from the first electrode surface and facing the first electrode surface, and a fourth electrode surface extending in the second direction and spaced apart from the second electrode surface and facing the second electrode surface, and at least one light emitting element between the first electrode and the second electrode and including a first light emitting element between the first electrode surface and the third electrode surface and a second light emitting element between the second electrode surface and the fourth electrode surface. | 2022-06-23 |
20220199684 | LIGHT EMITTING DIODE UNIT - A light emitting diode device including a substrate, a plurality of terminals disposed on the substrate, and a plurality of light sources disposed on the substrate, electrically connected to the plurality of terminals, and configured to emit light, in which each of the light sources includes a light emitting diode chip, and a wall surrounding side surfaces of the light emitting diode chip, at least one of the light sources includes a wavelength converter disposed on the light emitting diode chip, and at least two light sources share the wall. | 2022-06-23 |
20220199685 | CROSS-POINT MAGNETORESISTIVE RANDOM MEMORY ARRAY AND METHOD OF MAKING THEREOF USING SELF-ALIGNED PATTERNING - A memory device includes a cross-point array of magnetoresistive memory cells. Each magnetoresistive memory cell includes a vertical stack of a selector-containing pillar structure and a magnetic tunnel junction pillar structure. The lateral spacing between neighboring pairs of magnetoresistive memory cells may be smaller along a first horizontal direction than along a second horizontal direction, and a dielectric spacer or a tapered etch process may be used to provide a pattern of an etch mask for patterning first electrically conductive lines underneath the magnetoresistive memory cells. Alternatively, a resist layer may be employed to pattern first electrically conductive lines underneath the cross-point array. Alternatively, a protective dielectric liner may be provided to protect selector-containing pillar structures during formation of the magnetic tunnel junction pillar structures. | 2022-06-23 |
20220199686 | CROSS-POINT MAGNETORESISTIVE RANDOM MEMORY ARRAY AND METHOD OF MAKING THEREOF USING SELF-ALIGNED PATTERNING - A memory device includes a cross-point array of magnetoresistive memory cells. Each magnetoresistive memory cell includes a vertical stack of a selector-containing pillar structure and a magnetic tunnel junction pillar structure. The lateral spacing between neighboring pairs of magnetoresistive memory cells may be smaller along a first horizontal direction than along a second horizontal direction, and a dielectric spacer or a tapered etch process may be used to provide a pattern of an etch mask for patterning first electrically conductive lines underneath the magnetoresistive memory cells. Alternatively, a resist layer may be employed to pattern first electrically conductive lines underneath the cross-point array. Alternatively, a protective dielectric liner may be provided to protect selector-containing pillar structures during formation of the magnetic tunnel junction pillar structures. | 2022-06-23 |
20220199687 | THREE-DIMENSIONAL FUNNEL-LIKE SPIN TRANSFER TORQUE MRAM CELL WITH A NON-UNIFORM THICKNESSES IN EACH LAYER - An approach to provide a funnel-shaped spin-transfer torque (STT) magnetoresistive random-access memory (MRAM) device with a dual magnetic tunnel junction. The approach includes providing a metal pillar on a connection to a semiconductor device. The approach includes providing a first reference layer on the metal pillar and on a portion of a first interlayer dielectric adjacent to the metal pillar. The approach includes providing a first tunnel barrier on the first reference layer and a free layer on the first tunnel barrier layer. The approach includes providing a second tunnel barrier on the free layer and a second reference layer on the second tunnel barrier of the semiconductor structure of the funnel-shaped spin-transfer torque MRAM device. | 2022-06-23 |
20220199688 | SYMMETRIC READ OPERATION RESISTIVE RANDOM-ACCESS MEMORY CELL WITH BIPOLAR JUNCTION SELECTOR - A memory device, and a method of making the same, includes a resistive random-access memory element electrically connected to an extrinsic base region of a bipolar junction transistor, the extrinsic base region of the bipolar junction transistor consisting of an epitaxially grown material that forms the bottom electrode of the resistive random-access memory element. Additionally, a method of writing to the memory device includes applying a first voltage on a word line of the memory device to form a filament in the resistive random-access memory element. A second voltage including an opposite polarity to the first voltage can be applied to the word line to remove a portion of the filament in the resistive random-access memory element. | 2022-06-23 |
20220199689 | OLED DISPLAY PANEL AND MANUFACTURING METHOD THEREOF - An organic light-emitting diode (OLED) display panel and a manufacturing method thereof are provided. The OLED display panel includes an optical filter layer and a light-emitting layer stacked and disposed along a first direction. The optical filter layer includes a substrate, a first capping layer, and a color filter are sequentially stacked along the first direction. The light-emitting layer includes a second capping layer, a first electrode, a light-emitting functional layer, a hole transport layer, and a second electrode are sequentially stacked along the first direction. Thus, the light loss inside the OLED display panel can be reduced, and the light extraction efficiency can be improved. | 2022-06-23 |
20220199690 | DISPLAY DEVICE - A display device is provided. A display device including a plurality of light-output areas through which incident light is emitted and a light-blocking area which blocks the incident light, the display device includes a substrate, a bank layer which is disposed in the light-blocking area on the substrate and defines a plurality of openings, each of which is disposed in one of the plurality of light-output areas, and a color control pattern disposed in the opening of the bank layer, wherein the bank layer includes a first bank area which has a first thickness and defines the plurality of openings and a second bank area which is disposed between the plurality of openings and has a second thickness smaller than the first thickness. | 2022-06-23 |
20220199691 | DISPLAY DEVICE - Disclosed is a display device capable of suppressing a rainbow mura defect. The display device includes a base substrate including a display area and a non-display area; a plurality of organic light-emitting elements disposed in the display area; an encapsulation layer disposed to cover the plurality of organic light-emitting elements; a mesh-shaped touch electrode disposed on the encapsulation layer, wherein the touch electrode has a plurality of openings defined therein; a color filter layer disposed on the touch electrode, wherein the color filter layer includes: a plurality of color filters arranged to respectively correspond to the plurality of openings of the touch electrode; and a black matrix disposed to correspond to the touch electrode; and a planarization layer disposed on the color filter layer, wherein the planarization layer contains a matrix resin, and inorganic nano-tubes irregularly dispersed in the matrix resin. | 2022-06-23 |
20220199692 | COLOR FILTER STRUCTURE AND DISPLAY DEVICE INCLUDING THE SAME - Discussed is a color filter structure for converting a wavelength of light emitted from a light-emissive element. The color filter structure includes a light-conversion layer containing a first resin and quantum dots dispersed in the first resin, wherein each quantum dot has a core/shell structure. The color filter structure further includes a light-absorbing layer stacked on the light-conversion layer, wherein the light-absorbing layer contains a second resin and semiconductor nano-particles dispersed in the second resin. The semiconductor nano-particles absorb light emitted from the light-emissive element. Accordingly, the color filter structure improves color purity and luminance of the emitted light. | 2022-06-23 |
20220199693 | ORGANIC LIGHT EMITTING DISPLAY PANEL, METHOD FOR MANUFACTURING THE SAME AND ORGANIC LIGHT EMITTING DISPLAY APPARATUS - The present disclosure provides an organic light emitting display panel, a method for manufacturing the same, and an organic light emitting display apparatus. The organic light emitting display panel includes an array substrate, a color filter substrate and an encapsulation structure; the encapsulation structure includes a sealing frame and/or a sealing layer disposed between the array substrate and the color filter substrate, and the array substrate and the color filter substrate are adhesively fixed through the sealing frame and/or the sealing layer; wherein the sealing frame is formed by curing a frame sealant and is located in a frame area of the array substrate and the color filter substrate, and the sealing layer is formed by curing a filling adhesive and is located in a display area of the array substrate and the color filter substrate. | 2022-06-23 |
20220199694 | DISPLAY DEVICE AND METHOD OF FABRICATING THE SAME - A method of fabricating a display device includes: preparing a substrate including emission areas and a non-emission area between the emission areas; forming a bank on the non-emission area to a first height; forming light conversion patterns on the emission areas to a height equal to or less than the first height; polishing a surface of a light conversion layer including the bank and the light conversion patterns so that the surface of the light conversion layer is flat; and forming a filler layer on a surface of the substrate on which the light conversion layer is provided. The polishing of the light conversion layer includes planarizing the surface of the light conversion layer so that the bank and the light conversion patterns have a second height through chemical mechanical polishing utilizing a metallic slurry. | 2022-06-23 |
20220199695 | DISPLAY APPARATUS, LIGHT EMITTING DEVICE, AND LIGHT EMITTING MEMBER - The display apparatus includes a plurality of light emitting device units each including: a light generating unit | 2022-06-23 |
20220199696 | TOUCH DISPLAY DEVICE - A touch display device is provided, which includes an organic light-emitting diode display panel, the organic light-emitting diode display panel includes support pillars and a cathode, a part of the cathode is formed on the support pillars; a touch layer includes an insulation layer and a first conductive layer, the insulation layer is provided with protrusions, a part of the first conductive layer is positioned on a side of the protrusions away from the cathode, and orthographic projections of the protrusions on the touch display device at least partially coincide with orthographic projections of the support pillars on the touch display device. | 2022-06-23 |
20220199697 | DISPLAY PANEL, METHOD FOR MANUFACTURING THE SAME AND DISPLAY DEVICE - Provided is a display panel, including: a substrate comprising: a display region, a peripheral region and a pad region; a first dam; a planarization layer disposed within the first dam, wherein a first groove is defined between the first dam and the planarization layer, and wherein an edge of a first side of the planarization layer comprises a first segment boundary and a second segment boundary that are connected; a packaging layer covering the planarization layer; and a touch layer disposed on the packaging layer, wherein the touch layer comprises a touch signal line and a touch electrode pattern, the a touch electrode pattern being electrically connected to a pad in the pad region by the touch signal line which travels through the first segment boundary; wherein the packaging layer comprises an organic layer, an edge of the organic layer being disposed in the first groove. | 2022-06-23 |
20220199698 | DISPLAY DEVICE - The display device includes a display panel and an input detection member. The input detection member includes a first conductive pattern, a first insulating layer covering the first conductive pattern, a second conductive pattern disposed on the first insulating layer, and a second insulating layer covering the second conductive pattern. Both the first insulating layer and the second insulating layer include an organic material. The refractive index of the second insulating layer is greater than that of the first insulating layer. | 2022-06-23 |
20220199699 | DISPLAY DEVICE - Some embodiments provide a display device including a substrate having an opening area, a peripheral area surrounding the opening area, and a display area surrounding the peripheral area, a transistor and a light emitting element on the substrate, an encapsulation layer on the light emitting element, a first touch insulating layer on the encapsulation layer, an overcoat layer on the first touch insulating layer, and defining a first opening, and a cover layer filling the first opening, wherein at least one of the overcoat layer and the cover layer extends from the display area to the peripheral area, and wherein the substrate includes a depression pattern that is filled by the overcoat layer or the cover layer. | 2022-06-23 |
20220199700 | DISPLAY DEVICE - A display device includes an encapsulation layer disposed to cover a plurality of organic light-emitting elements arranged in a display area of a substrate, and a mesh-shaped touch electrode disposed on the encapsulation layer. In this connection, a light control layer is disposed on the touch electrode. The light control layer includes a plurality of prism patterns arranged to correspond respectively to a plurality of openings of the touch electrode, and a plurality of reflective partition walls respectively surrounding the plurality of prism patterns. Accordingly, a viewing angle of the display device is controlled and a front-directional luminance thereof is improved. | 2022-06-23 |
20220199701 | TOUCH DISPLAY PANEL - The touch display panel of the disclosure includes a first substrate, a first display electrode, a spacer and a first touch electrode. The first display electrode is disposed on the first substrate. The spacer is disposed on the first substrate. The first touch electrode is disposed on the first substrate, wherein the first touch electrode has a first bridge part, and at least a portion of the first bridge part is overlapped with the spacer from a top view. | 2022-06-23 |
20220199702 | Display Device - The present disclosure relates a display panel. The display device includes a plurality of first pixels disposed in a first area, a plurality of second pixels disposed in a second area surrounded by the first area, and a plurality of third pixels disposed in a third area between the first area and the second area. | 2022-06-23 |
20220199703 | HIGH RESOLUTION LOW POWER CONSUMPTION OLED DISPLAY WITH EXTENDED LIFETIME - Full-color pixel arrangements for use in devices such as OLED displays are provided, in which multiple sub-pixels are configured to emit different colors of light, with each sub-pixel having a different optical path length than some or all of the other sub-pixels within the pixel. | 2022-06-23 |
20220199704 | DISPLAY PANEL, MANUFACTURING METHOD OF DISPLAY PANEL, AND DISPLAY APPARATUS - Disclosed are a display panel, a manufacturing method of the display panel, and a display apparatus. The display panel includes: a base substrate; and a pixel circuit film layer disposed on the base substrate. The display panel has a plurality of island regions, opening regions between the adjacent island regions, and bridge regions connecting adjacent island regions. Where the plurality of island regions are provided therein the base substrate and the pixel circuit film layer; the opening regions each is provided with a first via hole, and the first via hole runs through the base substrate and the pixel circuit film layer. The display panel further comprises: deformable components each filling the first via hole; where each deformable component comprises an elastic material. | 2022-06-23 |
20220199705 | DISPLAY APPARATUS - A display apparatus is disclosed that includes a first display area and a second display area adjacent to the first display area. The first and second display areas include first and second light emitting areas having first and second pixel densities, respectively. The first and second light emitting areas at an interface between the first and second display areas are arranged such that in operation light emitted by the first and second light emitting areas produces a gradual decrease in light intensity from the first display area to the second display area near the interface. | 2022-06-23 |
20220199706 | DISPLAY DEVICE - Provided is a display device. The display device includes a substrate having a pixel area including a first sub-pixel area, a second sub-pixel area, and a third sub-pixel area, a first control layer on the substrate, a second control layer on the first control layer, an intervening layer disposed between the first control layer and the second control layer on the first sub-pixel area and the second sub-pixel area, first quantum dots on the intervening layer of the first sub-pixel area, second quantum dots on the intervening layer of the second sub-pixel area, and an organic layer configured to cover a top surface and a side surface of the intervening layer between the first control layer and the second control layer. | 2022-06-23 |
20220199707 | DISPLAY DEVICE - A display device includes: a pixel part in which sub-pixels are disposed, and at least one transparent part disposed in an area adjacent to the pixel part. The at least one transparent part passes external light therethrough. The pixel part may include: first, second, third and fourth extension parts extending in directions different from each other and including wires; and first, second, third and fourth circuit parts. Each of the first, second, third and fourth circuit parts is disposed between adjacent pairs of the first, second, third and fourth extension parts and includes circuit elements of a respective sub-pixel of the sub-pixels. | 2022-06-23 |
20220199708 | Light Emitting Display Device - A light emitting display device comprises a substrate having subpixel areas, a plurality of first electrodes, each of the first electrodes in a corresponding one of the subpixel areas, a bank covering an edge portion of each of the first electrodes, the bank , a disconnection portion disposed at boundary areas between the subpixel areas, an undercut area in the disconnection portion, the undercut area formed under an end of the bank that extends past an end of a first electrode from the plurality of first electrodes , a light emitting element layer including a first portion and a second portion, the first portion disposed on the first electrode, the bank, and electrically connected to the first electrode, and the second portion disposed in the disconnection portion but is not electrically connected to the first electrode, and a second electrode on the light emitting element layer. | 2022-06-23 |
20220199709 | ELECTROLUMINESCENT DISPLAY DEVICE - An electroluminescent display device includes a substrate having a first subpixel and a second subpixel, which are adjacent to each other, a first electrode provided in each of the first subpixel and the second subpixel on the substrate, a trench including a first trench and a second trench, which are provided to be spaced apart from each other at a boundary between the first subpixel and the second subpixel on the substrate, a light emitting layer provided on the first electrode and provided in the first subpixel, the second subpixel and a boundary between the first subpixel and the second subpixel, and a second electrode provided on the light emitting layer, wherein a first portion of the light emitting layer is discontinuous in the first trench and the second trench, a second portion of the light emitting layer is discontinuous in the first trench and is continuous in an area overlapped with the second trench, and a third portion of the light emitting layer is continuous in an area overlapping with the first trench and the second trench. | 2022-06-23 |
20220199710 | DISPLAY PANEL AND DISPLAY DEVICE - A display panel and a display device. The display panel includes a first display area, a second display area and a transition display area between the first display area and the second display area. A light transmittance of the first display area is greater than a light transmittance of the second display area. The display panel includes a plurality of columns of first sub-pixels disposed in the transition display area arranged in a first direction, and each column of sub-pixels includes a plurality of first sub-pixels arranged in a second direction which intersects the first direction. A plurality of first pixel circuits corresponding to at least one column of first sub-pixels are distributed on a same column. | 2022-06-23 |
20220199711 | DISPLAY PANEL, DISPLAY APPARATUS, AND MANUFACTURING METHOD THEREOF - The present disclosure relates to a display panel. The display panel may include a substrate. The substrate may include a display area, a dummy area inside the display area, and a boundary area between the dummy area and the display area on the substrate. The display substrate may further include an isolation protrusion on the substrate at the boundary area. The isolation protrusion may be configured to isolate a functional layer in the display area from the functional layer in the dummy area, and at least a side surface of the isolation protrusion facing the dummy area may be covered by an isolation inorganic layer. | 2022-06-23 |
20220199712 | DISPLAY DEVICE HAVING SWITCHABLE VIEWING ANGLE - A display device having switchable viewing angle includes a display panel including a first emission area, a second emission area, a third emission area and a fourth emission area, from which light in different wavelength bands is emitted, and a transparent photochromic layer disposed on at least one surface of the display panel, wherein each of the first emission area, the second emission area and the third emission area emits light in a wavelength band of visible light, the fourth emission area emits light in a wavelength band of ultraviolet ray, and when the fourth emission area is in an emission state, an area of the photochromic layer including the area corresponding to the fourth emission area is an opaque area, and wherein when the fourth emission area is in a non-emission state, an area of the photochromic layer including the area corresponding to the fourth emission area is a transparent region, thereby providing a display device capable of switching viewing angles. | 2022-06-23 |
20220199713 | DISPLAY DEVICE - A display device includes: a substrate; a first bank including a first sub-bank and a second sub-bank spaced apart from each other on the substrate; a first electrode on the first sub-bank; a second electrode on the second sub-bank and spaced apart from the first electrode; and a light-emitting element between the first sub-bank and the second sub-bank. Each of the first and second sub-banks has a first area having a concave curved shape in a cross section and being adjacent to the light-emitting element. The first electrode has a first section extending beyond the first sub-bank toward the light-emitting element, the second electrode has a first section extending beyond the second sub-bank toward the light-emitting element, and a width of the first section of the first electrode is different from a width of the first section of the second electrode. | 2022-06-23 |
20220199714 | DISPLAY DEVICE AND METHOD OF MANUFACTURING SAME - A display device includes a substrate, a circuit element layer and a bank region. The substrate includes a light emitting region and a non-light-emitting region. The light emitting region forms an opening region. The non-light-emitting region is adjacent to the light emitting region. The circuit element layer is formed in the non-light-emitting region. The bank layer covers a top of the circuit element layer. The bank layer is not formed in the light emitting region. | 2022-06-23 |
20220199715 | Display Apparatus Realizing a Narrow Viewing Angle - A display apparatus realizing a narrow viewing angle is provided. The display apparatus may include a light-emitting device on an emission region of a device substrate. A touch structure and a lens may be disposed on an encapsulating element covering the light-emitting device. The lens may be disposed on the emission region. A color filter may be disposed on the touch structure and the lens. Thus, in the display apparatus, Moire phenomenon may be prevented or at least reduced. | 2022-06-23 |
20220199716 | DISPLAY DEVICE - A display device includes a light-emitting element layer including a plurality of light-emitting elements including light-emitting elements configured to emit lights of luminescent colors different from each other, each light-emitting element being provided with a first electrode, a function layer including a light-emitting layer, and a second electrode in this order, the second electrode includes metal nanowires, and the light-emitting element layer is provided with a pixel bank segmenting the metal nanowires at least for each luminescent color. | 2022-06-23 |
20220199717 | ORGANIC LIGHT EMITTING PANEL AND ORGANIC LIGHT EMITTING DISPLAY DEVICE - An organic light emitting display panel and an organic light emitting display device including the display panel that includes a buffer layer disposed on a first conductive layer, and including a first contact hole overlapping a part of the first conductive layer, an active layer disposed on the buffer layer, a first insulating film disposed on the active layer and the buffer layer, and including a second contact hole overlapping the first contact hole, a second insulating film disposed over the first insulating film, and including a third contact hole overlapping a part of each of the first contact hole and the second contact hole, and a third conductive layer disposed on the second insulating film, and contacting a part of the second conductive layer through the second contact hole. The third contact hole does not overlap with the active layer. The organic light emitting display panel including a high-capacity storage capacitor and the organic light emitting display device including the display panel can be provided. | 2022-06-23 |
20220199718 | ORGANIC LIGHT EMITTING PANEL AND ORGANIC LIGHT EMITTING DISPLAY DEVICE INCLUDING THE SAME - A display panel of an organic light emitting display device includes a buffer layer disposed on a first conductive layer, and including a first contact hole, an active layer disposed on the buffer layer, and including an active pattern and a conductive pattern disposed on the active pattern, a first insulating film disposed on or over the active layer and the buffer layer, and including a second contact hole overlapping with the first contact hole, a second conductive layer disposed on the first insulating film, and contacting the first conductive layer through the first contact hole and the second contact hole, a plate disposed in the same layer as the second conductive layer, and spaced apart from the second conductive layer, and each of the first conductive layer, the active layer, and the plate serves as an electrode of a storage capacitor, thereby implementing a high-capacity storage capacitor for the display panel. | 2022-06-23 |
20220199719 | TFT ARRAY SUBSTRATE AND DISPLAY PANEL - The disclosure provides a thin film transistor (TFT) array substrate provided with a display area and a bending area, including a substrate layer and a functional layer disposed on the substrate layer, wherein the functional layer includes a plurality of insulating layers and a plurality of metal layers. In the bending area, the metal layers include a first metal layer, a second metal layer, and a second gate layer. The first metal layer is disposed on a side end of a filling layer and connects to the second gate layer by a through hole. The second metal layer is disposed on an insulating layer on an outer side of the first metal layer. | 2022-06-23 |
20220199720 | DISPLAY DEVICE AND METHOD OF MANUFACTURING THE DISPLAY DEVICE - A display device is disclosed that includes: a substrate comprising a display area and a component area including a transmission area; a first thin-film transistor comprising a first semiconductor layer and a first gate electrode, the first semiconductor layer including a silicon semiconductor; a first insulating layer covering the first gate electrode; a second thin-film transistor comprising a second semiconductor layer arranged on the first insulating layer and a second gate electrode, the second semiconductor layer including an oxide semiconductor; a second insulating layer covering the second gate electrode and having a transmission hole overlapping the transmission area; an intermediate insulating layer between the first insulating layer and the second insulating layer; a conductive pattern between the intermediate insulating layer and the first insulating layer; and a display element arranged on the second insulating layer, wherein the transmission hole exposes an upper surface of the intermediate insulating layer. | 2022-06-23 |
20220199721 | METHOD OF MANUFACTURING POLYCRYSTALLINE SILICON LAYER, DISPLAY DEVICE, AND METHOD OF MANUFACTURING DISPLAY DEVICE - A method of manufacturing a polycrystalline silicon layer, includes forming an amorphous silicon layer on a substrate; doping the amorphous silicon layer with at least one impurity; cleaning the amorphous silicon layer with hydrofluoric acid; rinsing the amorphous silicon layer with hydrogen-added deionized water; and forming a polycrystalline silicon layer by irradiating a laser beam onto the amorphous silicon layer. | 2022-06-23 |
20220199722 | DISPLAY PANEL - A display panel including a main display area and a light-transmitting area, which is a non-main display area. The display panel includes a plurality of film layers arranged in a stack, a portion of the plurality of film layers is configured as light-transmitting layers, at least a portion of the light-transmitting layers is disposed in the light-transmitting area, and the display panel includes: at least one light modulation layer, each of the at least one light modulation layers is sandwiched between two of the light-transmitting layers disposed in the light-transmitting area, and the light modulation layer is configured to increase a transmittance of light of a preset wavelength between two light-transmitting layers sandwiching the light modulation layer. | 2022-06-23 |
20220199723 | DISPLAY PANEL AND A DISPLAY APPARATUS INCLUDING THE SAME - A display panel includes: a substrate including a first area, a second area, and a third area between the first area and the second area; a first structure located in the second area and including a pixel electrode, an opposite electrode, an intermediate layer between the pixel electrode and the opposite electrode, and at least one organic material layer; and a plurality of grooves located in the third area and separating the at least one organic material layer and the opposite electrode, wherein a first groove of the plurality of grooves is provided in a multi-layered film including a lower layer and an upper layer, wherein the upper layer includes an inorganic material layer and a first step adjacent to the first groove, the first step having an elevation higher than an upper surface of the lower layer. | 2022-06-23 |
20220199724 | DISPLAY APPARATUS - A display apparatus includes a substrate including a display area in which a display element is arranged, a first thin-film transistor arranged in the display area and including a first semiconductor layer and a first gate electrode insulated from the first semiconductor layer, the first semiconductor layer including a silicon semiconductor, a first interlayer insulating layer covering the first gate electrode, a second thin-film transistor on the first interlayer insulating layer and including a second semiconductor layer and a second gate electrode insulated from the second semiconductor layer, the second semiconductor layer including an oxide semiconductor, and an upper electrode arranged on the first interlayer insulating layer and including a same material as that of the second semiconductor layer and at least overlapping the first gate electrode. | 2022-06-23 |
20220199725 | DISPLAY DEVICE AND MANUFACTURING METHOD THEREOF - The display device includes a substrate including a plurality of pixel areas; and a pixel in each of the plurality of pixel areas. The pixel may include a pixel circuit layer on the substrate and including at least one transistor; a first electrode on the pixel circuit layer and electrically connected to the transistor; a plurality of light emitting elements on the first electrode and electrically connected to the first electrode; a second electrode on the plurality of light emitting elements; and a light blocking pattern on the second electrode and including a plurality of openings corresponding to each of the plurality of light emitting elements. Here, each of the plurality of pixel areas may include an emission area corresponding to each of the plurality of openings and a non-emission area excluding the emission area. | 2022-06-23 |
20220199726 | DISPLAY DEVICE - A display device includes a first display region and a second display region having a lower pixel density than the first display region. A first pixel circuit in the first display region includes a first drive transistor, a first storage capacitor that stores a control voltage of the first drive transistor, and a first switch transistor that writes a data signal to the first storage capacitor. A second pixel circuit in the second display region includes a second drive transistor, a second storage capacitor that stores a control voltage of the second drive transistor, and a second switch transistor that writes a data signal to the second storage capacitor. A channel width of the second drive transistor is greater than a channel width of the first drive transistor. A channel width of the second switch transistor is greater than a channel width of the first switch transistor. | 2022-06-23 |
20220199727 | ELECTROLUMINESCENCE DISPLAY DEVICE - An electroluminescence display device having a narrow bezel structure includes a substrate, a plurality of pixels, a thin film transistor, a planarization layer, a light emitting diode, a plurality of trenches, a dummy light emitting layer, an encapsulation layer and a cover plate, the substrate includes a display area and a non-display area; a light emitting diode includes an anode electrode, a light emitting layer and a cathode electrode, and is disposed on the planarization layer; a plurality of trenches formed at the planarization layer in the non-display area, and surrounding the display area; and a dummy light emitting layer disposed in the non-display area as to be extended from the light emitting layer. | 2022-06-23 |
20220199728 | TRANSPARENT DISPLAY DEVICE - A transparent display device may prevent deterioration of light transmittance, which is caused by a repair line, from occurring. The transparent display device comprises a substrate provided with transmissive areas, a non-transmissive area disposed between the transmissive areas, and a plurality of subpixels disposed in the non-transmissive area, a first electrode provided in each of the plurality of subpixels, a driving transistor connected with the first electrode of each of the plurality of subpixels, including an active layer, a gate electrode, a source electrode and a drain electrode, a capacitor connected to the driving transistor of each of the plurality of subpixels, including a first capacitor electrode and a second capacitor electrode, and an anode line extended from the first electrode of each of the plurality of subpixels to at least partially overlap a driving transistor or a capacitor of an adjacent subpixel of the same color. | 2022-06-23 |
20220199729 | DISPLAY DEVICE - A display device includes: a substrate including an opening area, a display area, and a non-display area arranged between the opening area and the display area; a first thin-film transistor arranged on the substrate and including a first semiconductor layer including a silicon semiconductor; a first insulating layer covering the first semiconductor layer and defining a lower contact hole overlapping the non-display area, a second thin-film transistor arranged on the first insulating layer and including a second semiconductor layer including an oxide semiconductor; a second insulating layer covering the second semiconductor layer and defining an upper contact hole overlapping the lower contact hole; a display element overlapping the display area, a lower conductive layer overlapping the lower contact hole; and an upper conductive layer arranged on the second insulating layer and connected to the lower conductive layer through the lower contact hole and the upper contact hole. | 2022-06-23 |
20220199730 | LIGHT EMITTING DISPLAY APPARATUS - A disclosed light emitting display apparatus includes a substrate; a pixel driving layer on the substrate and including a driving transistor; a cover layer covering the pixel driving layer; a plurality of light emitting elements, including a first light emitting element and a second light emitting element each having a first electrode on the cover layer and being adjacent to each other; a bank disposed on the cover layer and between the first electrode of the first light emitting element and the first electrode of the second light emitting element; and a capacitor overlapping with the bank. The capacitor may include a first metal layer connected with a first terminal of the driving transistor via the first electrode of one of the first and second light emitting elements, and a second metal layer connected with a gate of the driving transistor. | 2022-06-23 |
20220199731 | DISPLAY DEVICE - A display device includes a first area in which one or more first pixels are disposed, and a second area surrounded by the first area and in which one or more second pixels are disposed. The second area includes a first sensor area corresponding to a first sensor, and a second sensor area corresponding to a second sensor. Each of the first sensor area and the second sensor area includes a blocking layer different from each other. | 2022-06-23 |
20220199732 | DISPLAY APPARATUS - A display apparatus includes a first substrate including a display area and a peripheral area outside the display area, a display layer disposed in the display area and including first to third light-emitting elements, a shield pattern portion including a lower pattern layer disposed in the peripheral area and surrounding at least part of the display layer, and an upper pattern layer disposed above the lower pattern layer and electrically connected to the lower pattern layer through contact holes in an insulating layer covering the lower pattern layer, a second substrate disposed above the display layer, and a sealing portion surrounding at least a part of the display layer, disposed between the first substrate and the second substrate, covering one side of the shield pattern portion in a direction toward the display layer, and overlapping the contact holes. | 2022-06-23 |
20220199733 | DISPLAY SUBSTRATE AND DISPLAY DEVICE - A display substrate includes: a base substrate including a display region and a non-display region surrounding the display region; a plurality of sub-pixels in the display region; a plurality of power lines in the display region, the plurality of power lines extending along a first direction, and being electrically connected to the plurality of sub-pixels and being configured to provide power signals for the plurality of sub-pixels; a plurality of dummy sub-pixels in the non-display region on one side of the display region along the first direction; and a plurality of dummy power lines in the non-display region, the plurality of dummy power lines extending along the first direction, the plurality of dummy power lines and the plurality of dummy sub-pixels being on the same side of the display region. | 2022-06-23 |
20220199734 | DISPLAY PANEL AND DISPLAY DEVICE - Some embodiments of the disclosure provide a display panel and a display device. The display panel includes: a display area; a winding area surrounded by the display area; a notch area surrounded by the winding area; a plurality of pixel driving circuits located in the display area; a plurality of light-emitting devices located at sides, facing away from a base substrate, of the pixel driving circuits, each pixel driving circuit being electrically connected to one corresponding light-emitting device; an orthographic projection of at least one of the plurality of light-emitting devices on the base substrate overlaps with the winding area, other light-emitting devices are in the display area; each light-emitting device whose orthographic projection on the base substrate overlaps with the winding area is electrically connected to corresponding pixel driving circuit through a first conducting line, and the first conducting line extends from the display area to the winding area. | 2022-06-23 |
20220199735 | Display Panel and Manufacturing Method Thereof, and Display Device - Provided are a display panel and a manufacturing method thereof, and a display device. The display panel includes: a base substrate including a display area and a peripheral area; a plurality of sub-pixels and gate lines located at the display area; and a gate driving circuit including cascaded multistage gate driving units, one or more stages gate driving units include first and second gate driving sub-circuits spaced apart by pixel driving circuits of a first group of sub-pixels; a gate driving sub-circuit connection line connected to the first and second gate driving sub-circuits. The pixel driving circuit of at least one of the first group of sub-pixels includes: a first pixel driving sub-circuit including a driving transistor including a first active layer; a second pixel driving sub-circuit; a connector located in a different layer from the first active layer and electrically connected to the first and second pixel driving sub-circuits. | 2022-06-23 |
20220199736 | Display Panel and Manufacturing Method Thereof, and Display Device - Provided are a display panel and a manufacturing method thereof, and a display device. The display panel includes: a base substrate including a display area and a peripheral area including a first peripheral area, and an edge of the first peripheral area is of a first curvature greater than zero; a plurality of sub-pixels, data lines and gate lines; a gate driving circuit located at the display area and including multistage gate driving units, one or more stages include a first and a second gate driving sub circuit; a plurality of control signal lines, at least a part of at least one control signal line is of a second curvature greater than zero; a plurality of data signal input lines; and a multiplexing circuit including a plurality of multiplexing units, each of which is connected to the control signal lines, one data signal input line, and at least two data lines. | 2022-06-23 |
20220199737 | Display Panel and Manufacturing Method Thereof, and Display Device - Provided are a display panel and a manufacturing method thereof, and a display device. The display panel includes: a base substrate including a display area and a peripheral area; a plurality of sub-pixels, each sub-pixel including a light-emitting element and a pixel driving circuit; a plurality of gate lines and light-emitting control lines; a gate driving circuit located at the display area and including cascaded multistage gate driving units, one or more stages include gate driving sub-circuits including a first and a second gate driving sub-circuit spaced apart by pixel driving circuits of a first group of sub-pixels; and a light-emitting control driving circuit located at the display area and including cascaded multistage light-emitting control driving units, one or more stages include light-emitting control driving sub-circuits including a first and a second light-emitting control driving sub-circuit spaced apart by pixel driving circuits of a second group of sub-pixels. | 2022-06-23 |
20220199738 | DISPLAY SUBSTRATE AND DISPLAY DEVICE - A display substrate and a display device are provided. The display substrate includes: a base substrate; a plurality of first data line leads; a plurality of multiplex switches and at least two control lines electrically coupled to the plurality of multiplex switches; a plurality of second data line leads; a plurality of first pads and a plurality of second pads; and at least two connecting lines coupled to the at least two control lines and at least two of the plurality of second pads; wherein a length of any of the at least two connecting lines is longer than a vertical distance from any of the at least two second pads to a control line coupled to any of the at least two connecting lines. | 2022-06-23 |
20220199739 | DISPLAY PANEL AND DISPLAY DEVICE - A display panel and a display device are provided. The display panel includes: a plurality of first pixel units, a plurality of second pixel units, a plurality of third pixel units and a plurality of first data lines. An effective light-emitting area of the first pixel unit is larger than an effective light-emitting area of the second pixel unit, and larger than an effective light-emitting area of the third pixel unit orthographic projection of the first data line on the base substrate is not overlapped with an orthographic projection of any one of the first electrode of the first pixel unit, the first electrode of the second pixel unit, and the first electrode of the third pixel unit on the base substrate. | 2022-06-23 |
20220199740 | DISPLAY PANEL AND DISPLAY APPARATUS - A display panel has a display region and at least one bonding region located beside the display region. The display panel includes: a base; and a plurality of conductive pads provided on the base and located in each bonding region. The plurality of conductive pads are arranged at intervals along a first direction. The plurality of conductive pads include at least one first type of conductive pad configured to transmit a direct current voltage signal to the display region and a plurality of second type of conductive pads configured to transmit a pulse voltage signal to the display region. A dimension of one first type of conductive pad in the first direction is greater than a dimension of one second type of conductive pad in the first direction. | 2022-06-23 |
20220199741 | DISPLAY DEVICE AND METHOD OF MANUFACTURING THE SAME - A display device includes a substrate, a first lower pattern disposed on the substrate, a second lower pattern disposed in a same layer as the first lower pattern and integrally formed with the first lower pattern, an etch stopper disposed on the second lower pattern, a power voltage line disposed on the first lower pattern, and a transfer pattern disposed on the etch stopper, connected to the power voltage line, and contacting the second lower pattern through a contact hole defined through the etch stopper. | 2022-06-23 |
20220199742 | DISPLAY DEVICE AND METHOD FOR REPAIRING THE SAME - A display device includes a semiconductor layer of a driving transistor; a semiconductor layer of a switching transistor; a semiconductor layer of an initialization transistor; a gate electrode of the driving transistor overlapping a semiconductor layer of the driving transistor; a lower storage electrode connected to the semiconductor layer of the switching transistor; an upper storage electrode connected to the semiconductor layer of the driving transistor, a light blocking pattern, and the semiconductor layer of the initialization transistor, and overlapping the lower storage electrode; a semiconductor layer of a first auxiliary transistor adjacent the semiconductor layer of the switching transistor and/or the semiconductor layer of the initialization transistor; a first electrode of the first auxiliary transistor connected to the semiconductor layer of the first auxiliary transistor; and a second electrode of the first auxiliary transistor connected to the semiconductor layer of the first auxiliary transistor. | 2022-06-23 |
20220199743 | DISPLAY DEVICE INCLUDING ANISOTROPIC CONDUCTIVE FILM AND METHOD OF MANUFACTURING DISPLAY DEVICE - A display device includes a first substrate that includes a first electrode, a second substrate disposed under the first substrate and that includes, a second electrode that overlaps the first electrode, and an anisotropic conductive film disposed between the first substrate and the second substrate. The anisotropic conductive film includes an insulating resin layer and a plurality of conductive particles in the insulating resin layer. The conductive particles include first conductive particles that overlap the first electrode and the second electrode, and second conductive particles other than the first conductive particles. Each of the first conductive particles and the second conductive particles includes a first flat surface, a second flat surface that faces the first flat surface, and a curved surface rounded between the first flat surface and the second flat surface. | 2022-06-23 |
20220199744 | DISPLAY DEVICE - A display device includes a first scan line spaced apart from a signal transmission region and a second scan line having a portion that is adjacent to the signal transmission region. The second scan line adjacent to the signal transmission region bypasses the signal transmission region. A compensation signal line connects one end of the second scan line and the other end thereof, and results in a decrease in a combined resistance of the second scan line. | 2022-06-23 |
20220199745 | DISPLAY DEVICE - A display device includes a substrate including a display area and a pad area, a transistor including an active layer disposed in the display area, a gate electrode disposed on the active layer, and a source electrode and a drain electrode disposed on the gate electrode, a fan-out line disposed in the pad area, an auxiliary line disposed on the fan-out line, a first interlayer insulating layer disposed between the gate electrode and the source electrode and between the fan-out line and the auxiliary line, and a first organic layer disposed between the first interlayer insulating layer and the auxiliary line, wherein the first organic layer does not overlap the display area. | 2022-06-23 |
20220199746 | TRANSPARENT DISPLAY DEVICE - A transparent display device has improved transparency. The transparent display device includes a substrate having transmissive areas and a non-transmissive area disposed between the transmissive areas. A first signal line is provided in the non-transmissive area and extended in a first direction. A second signal line is provided in the non-transmissive area and extended in a second direction. A first pixel includes a first subpixel, a second subpixel and a third subpixel, which are overlapped with at least a portion of the second signal line and disposed substantially in a line in the second direction. A second pixel disposed adjacent to the first pixel includes a first subpixel, a second subpixel and a third subpixel, which are overlapped with at least a portion of the second signal line and disposed substantially in a line in the second direction. The first pixel and the second pixel are disposed between two transmissive areas. | 2022-06-23 |
20220199747 | DISPLAY APPARATUS - A display apparatus includes first to third pixels sequentially arranged in a first direction, a first voltage line which transfers a first initialization voltage, a second voltage line which transfers a second initialization voltage, a first contact plug connecting the first pixel and the second pixel to the first voltage line, and a second contact plug connecting the second pixel and the third pixel to the second voltage line. | 2022-06-23 |
20220199748 | Display Device - A display device includes: a through hole; a line region surrounding the through hole; a display region surrounding the line region; first to fourth layer lines which are located in the line region and at different layers; auxiliary layer lines which are located below the first layer lines or on the fourth layer lines; pixels located in the display region; first signal lines which are electrically connected to the pixels and are along a first direction; and second signal lines which are electrically connected to the pixels and are along a second direction intersecting the first direction, wherein the auxiliary layer lines electrically connected to one of the second signal lines. | 2022-06-23 |
20220199749 | DISPLAY DEVICE AND METHOD OF MANUFACTURING THE SAME - A display device includes: a display panel including a plurality of pad electrodes arranged in a first direction; a printed circuit board including a plurality of lead electrodes facing the plurality of pad electrodes, respectively; a plurality of conductive particles disposed between the display panel and the printed circuit board at predetermined intervals; and a coating layer disposed on the plurality of conductive particles and having a thickness varying in the first direction from each of the plurality of lead electrodes toward each of the plurality of pad electrodes. | 2022-06-23 |
20220199750 | DISPLAY DEVICE - A display device having a display area including a plurality of pixels arranged along a first direction and a second direction, and a non-display area located around the display area, the non-display area including a first peripheral area surrounding the display area, a second peripheral area located at a lower side of the first peripheral area, and a bending area located between the first and second peripheral areas, the display device comprises a base substrate; a multiplexer circuit unit in the second peripheral area on the base substrate, the multiplexer circuit unit being spaced apart from the display area with the bending area interposed therebetween; spider lines connected to the multiplexer circuit unit and the plurality of pixels; data lines connected to the pixel disposed in the display area on the base substrate and extending along the second direction; and connection lines connecting the data line to the spider line. | 2022-06-23 |
20220199751 | DISPLAY DEVICE, MANUFACTURING APPARATUS OF CHIP ON FILM, AND MANUFACTURING METHOD OF CHIP ON FILM - A display device includes a base film, a driving chip disposed under the base film, a first pad disposed under the base film and connected to the driving chip, and a display panel including a first connection pad connected to the first pad, where one side of the first pad has a first inclined surface which is angled at a first angle with respect to a top surface of the first pad, and the first angle is an acute angle. | 2022-06-23 |
20220199752 | DISPLAY DEVICE - There is provided a display device. The display device includes a first data line on a first interlayer insulating layer over a substrate, a first power line and a second power line on a second interlayer insulating layer, the second interlayer insulating layer covering the first data line, and a plurality of pixels. A first pixel among the plurality of pixels includes a display element including a pixel electrode, an opposite electrode, and an intermediate layer between the pixel electrode and the opposite electrode, the second power line being connected to the opposite electrode, and a driving thin film transistor between the substrate and the display element and including a driving semiconductor layer, a driving gate electrode, a driving source electrode, and a driving drain electrode, the first interlayer insulating layer covering the driving gate electrode, and the first power line being connected to the driving source electrode. | 2022-06-23 |
20220199753 | DISPLAY DEVICE - A display device includes a base layer including an active area and a peripheral area outside the active area, a circuit element layer including a pixel circuit in the active area and a driving voltage wiring located in the peripheral area to supply a driving voltage to the pixel circuit. A light emitting element layer including a plurality of light emitting elements on the circuit element layer, a thin film sealing layer to cover the light emitting element layer, and an input sensing layer on the thin film sealing layer and including a sensing electrode and a sensing signal wiring part connected to the sensing electrode. The circuit element layer includes a connection wiring part overlapping the driving voltage wiring in the peripheral area and contacts the sensing signal wiring part. The connection wiring part is at a different layer from the driving voltage wiring. | 2022-06-23 |
20220199754 | DISPLAY APPARATUS - A display apparatus includes a substrate having a bending region between a first region and a second region, the bending region being configured to be bent about a bending axis that extends in one direction; a display unit on the substrate; a first wiring unit at the bending region, the first wiring unit including a first bending portion having a plurality of first holes; and a second wiring unit spaced apart from the first wiring unit and at the bending region, the second wiring unit including a second bending portion having a different shape from the first bending portion. | 2022-06-23 |
20220199755 | TRANSPARENT DISPLAY DEVICE - A transparent display device includes a substrate provided with a display area on which subpixels are disposed, a first non-display area disposed on one side of the display area, and a second non-display area disposed on another side of the display area. Power shorting bars are in the first non-display area over the substrate and extend in parallel in a first direction. Power lines are positioned in the display area over the substrate, extend in a second direction and are coupled to the power shorting bars. A first transmissive area is positioned between the power lines, and a second transmissive area is positioned between the power shorting bars, both of which have substantially the same shape. The shorting bars are coupled together on at least one end. | 2022-06-23 |
20220199756 | METAL INSULATOR METAL (MIM) CAPACITOR OR BACKEND TRANSISTOR HAVING EPITAXIAL OXIDE - Metal insulator metal capacitors or backend transistors having epitaxial oxides are described. In a first example, metal-insulator-metal (MIM) capacitor includes a first electrode plate. A capacitor dielectric is on the first electrode plate. The capacitor dielectric includes a single crystalline oxide material. A second electrode plate is on the capacitor dielectric, the second electrode plate having a portion over and parallel with the first electrode plate. In a second example, a transistor includes a gate electrode above a substrate. A gate dielectric above and on the gate electrode. The gate dielectric includes a single crystalline oxide material. A channel material layer is on the single crystalline oxide material. Source or drain contacts are on the channel material layer. | 2022-06-23 |
20220199757 | Ferroelectric Devices - Some embodiments include a ferroelectric device having a ferroelectric insulative material which includes zinc. Some embodiments include a capacitor having a ferroelectric insulative material between a first electrode and a second electrode. The ferroelectric insulative material includes one or more metal-oxide-containing layers and one or more zinc-containing layers. Some embodiments include a memory array having a first set of first conductive structures and a second set of second conductive structures. The first conductive structures are coupled with driver circuitry, and the second conductive structures are coupled with sensing circuitry. The memory array includes an array of access devices. Each of the access devices is uniquely addressed by one of the first conductive structures in combination with one of the second conductive structures. Ferroelectric capacitors are coupled with the access devices. Each of the ferroelectric capacitors includes ferroelectric insulative material having zinc. | 2022-06-23 |
20220199758 | CARBON ELECTRODES FOR FERROELECTRIC CAPACITORS - Capacitors with a carbon-based electrode layer in contact with a ferroelectric insulator. The insulator may be a perovskite oxide. Low reactivity of the carbon-based electrode may improve stability of a ferroelectric capacitor. A carbon-based electrode layer may be predominantly carbon and have a low electrical resistivity. A carbon-based electrode layer may be the only layer of an electrode, or it may be a barrier between the insulator and another electrode layer. Both electrodes of a capacitor may include a carbon-based electrode layer, or a carbon-based electrode layer may be included in only one electrode. | 2022-06-23 |
20220199759 | DEEP TRENCH CAPACITOR INCLUDING SELF-ALIGNED PLATE CONTACT VIA STRUCTURES AND METHODS OF FORMING THE SAME - A deep trench is formed in a substrate, and a layer stack including at least three metallic electrode plates interlaced with at least two node dielectric layers is formed in, and over, the deep trench. A contact-level dielectric material layer over the layer stack, and contact via cavities are formed therethrough. The depths of the contact via cavities are differentiated by selectively increasing the depth of a respective subset of the contact via cavities by performing at least twice a combination of processing steps that includes an etch mask formation process and an etch process. A combination of a dielectric contact via liner and a plate contact via structure can be formed within each of the contact via cavities. Plate contact via structures that extend through any metallic electrode plate can be electrically isolated from such a metallic electrode plate by a respective dielectric contact via liner. | 2022-06-23 |
20220199760 | INTEGRATED CIRCUIT DEVICE HAVING BACKEND DOUBLE-WALLED CAPACITORS - An integrated circuit (IC) structure having a plurality of backend double-walled capacitors (DWCs) are described. In an example, a first interconnect layer is disposed over a substrate and a second interconnect layer is disposed over the first interconnect layer. In the example, a plurality of DWCs are disposed in the first interconnect layer or the second interconnect layer to provide capacitance to assist the first interconnect layer and the second interconnect layer in providing electrical signal routing and power distribution to one or more devices in the IC structure. In examples, the IC structure includes a logic IC or a coupling substrate. | 2022-06-23 |
20220199761 | EPITAXIAL STRUCTURE - An epitaxial structure includes a substrate, a nucleation layer on the substrate, a buffer layer on the nucleation layer, and a nitride layer on the buffer layer. The nucleation layer consists of regions in a thickness direction, wherein a chemical composition of the regions is Al | 2022-06-23 |
20220199762 | EPITAXIAL STRUCTURE - An epitaxial structure includes a substrate, a nucleation layer, a buffer layer, and a nitride layer orderly. The nucleation layer consists of regions in a thickness direction, wherein a chemical composition of the regions is Al | 2022-06-23 |
20220199763 | EPITAXIAL STRUCTURE - An epitaxial structure includes a substrate, a nucleation layer on the substrate, a buffer layer on the nucleation layer, and a nitride layer on the buffer layer. The nucleation layer consists of regions in a thickness direction, wherein a chemical composition of the regions is Al | 2022-06-23 |
20220199764 | TERMINATION STRUCTURES WITH REDUCED DYNAMIC OUTPUT CAPACITANCE LOSS - In a general aspect, a semiconductor device can include a substrate of a first conductivity type, an active region disposed in the substrate, and a termination region disposed in the substrate adjacent to the active region. The termination region can include a junction termination extension (JTE) of a second conductivity type, where the second conductivity type is opposite the first conductivity type. The JTE can have a first depletion stopper region disposed in an upper portion of the JTE, a second depletion stopper region disposed in a lower portion of the JTE, and a high carrier mobility region disposed between the first depletion stopper region and the second depletion stopper region. | 2022-06-23 |
20220199765 | Shielding Structure for SiC Devices - A semiconductor device includes: a SiC substrate; a device structure in or on the SiC substrate and subject to an electric field during operation of the semiconductor device; a current-conduction region of a first conductivity type in the SiC substrate below and adjoining the device structure; and a shielding region of a second conductivity type laterally adjacent to the current-conduction region and configured to at least partly shield the device structure from the electric field. The shielding region has a higher net doping concentration than the current-conduction region, and has a length (L) measured from a first position which corresponds to a bottom of the device structure to a second position which corresponds to a bottom of the shielding region. The current-conduction region has a width (d) measured between opposing lateral sides of the current-conduction region, and L/d is in a range of 1 to 10. | 2022-06-23 |
20220199766 | SiC Devices with Shielding Structure - A semiconductor device includes: a SiC substrate; a device structure in or on the SiC substrate and subject to an electric field during operation of the semiconductor device; a current-conduction region of a first conductivity type in the SiC substrate adjoining the device structure; and a shielding region of a second conductivity type laterally adjacent to the current-conduction region and configured to at least partly shield the device structure from the electric field. The shielding region has a higher net doping concentration than the current-conduction region, and has a length (L) measured from a first position which corresponds to a bottom of the device structure to a second position which corresponds to a bottom of the shielding region. The current-conduction region has a width (d) measured between opposing lateral sides of the current-conduction region, and L/d is in a range of 1 to 10. | 2022-06-23 |
20220199767 | SEMICONDUCTOR DEVICE INCLUDING STOPPER LAYER AND ELECTRONIC SYSTEM INCLUDING THE SAME - A semiconductor device including a peripheral circuit layer on a substrate; a lower stack and upper stack on the substrate; a stopper layer on the upper stack and including an insulating material; an upper mold layer on the stopper layer; a cell channel structure extending through the layers, a side surface of the cell channel structure contacting the stopper layer; first and second capping layers; a word line separation structure including a protrusion protruding toward the stopper layer; and a bit line contact plug connected to the cell channel structure, wherein an inner side surface of the stopper layer is offset from an inner side surface of the upper stack, and in contact with the word line separation structure. | 2022-06-23 |
20220199768 | SEMICONDUCTOR DEVICE WITH P-N JUNCTION ISOLATION STRUCTURE AND METHOD FOR FABRICATING THE SAME - The present application discloses a semiconductor device with a P-N junction isolation structure and a method for fabricating the semiconductor device. The semiconductor device includes a substrate, a first well layer positioned in the substrate and having a first electrical type, a bottom conductive layer positioned in the first well layer and having a second electrical type opposite to the first electrical type, a first insulating layer positioned on the bottom conductive layer, an isolation-mask layer positioned on the substrate and enclosing the first insulating layer, a first conductive line positioned on the first insulating layer, and a bias layer positioned in the first well layer and spaced apart from the bottom conductive layer. The bottom conductive layer, the first insulating layer, and the first conductive line together configure a programmable unit. | 2022-06-23 |
20220199769 | METHOD FOR FABRICATING SEMICONDUCTOR DEVICE WITH P-N JUNCTION ISOLATION STRUCTURE - The present disclosure provides a method for fabricating a semiconductor device. The method includes providing a substrate, forming a first well layer in the substrate and having a first electrical type, forming an isolation-mask layer on the first well layer, forming mask openings along the isolation-mask layer to expose portions of the first well layer, forming bottom conductive layers in the portions of the first well layer, forming a bias layer in the first well layer and spaced apart from the bottom conductive layers, forming first insulating layers on the bottom conductive layers, forming first conductive lines on the first insulating layers and parallel to each other. The bottom conductive layers have a second electrical type opposite to the first electrical type. The bottom conductive layers, the first insulating layers, the first conductive lines together configure programmable units. | 2022-06-23 |
20220199770 | INDIUM PHOSPHIDE SUBSTRATE AND METHOD FOR PRODUCING INDIUM PHOSPHIDE SUBSTRATE - Provided is an indium phosphide substrate having good accuracy of flatness of the orientation flat, and a method for producing the indium phosphide substrate. An indium phosphide substrate having a main surface and an orientation flat, wherein a difference between maximum and minimum values of a maximum height Pz in each of four cross-sectional curves is less than or equal to 1.50/10000 of a length in a longitudinal direction of an orientation flat end face, wherein the four cross-sectional curves are set at intervals of one-fifth of a thickness of the substrate on a surface excluding a width portion of 3 mm inward from both ends of the orientation flat end face in the longitudinal direction of the orientation flat end face, and the maximum height Pz in each of the four cross-sectional curves is measured in accordance with JIS B 0601:2013. | 2022-06-23 |
20220199771 | NEIGHBORING GATE-ALL-AROUND INTEGRATED CIRCUIT STRUCTURES HAVING CONDUCTIVE CONTACT STRESSOR BETWEEN EPITAXIAL SOURCE OR DRAIN REGIONS - Neighboring gate-all-around integrated circuit structures having a conductive contact stressor between epitaxial source or drain regions are described. In an example, a first vertical arrangement of nanowires and a second vertical arrangement of nanowires above a substrate. A first gate stack is over the first vertical arrangement of nanowires. A second gate stack is over the second vertical arrangement of nanowires. First epitaxial source or drain structures are at ends of the first vertical arrangement of nanowires. Second epitaxial source or drain structures are at ends of the second vertical arrangement of nanowires. An intervening conductive contact structure is between neighboring ones of the first epitaxial source or drain structures and of the second epitaxial source or drain structures. The intervening conductive contact structure imparts a stress to the neighboring ones of the first epitaxial source or drain structures and of the second epitaxial source or drain structures. | 2022-06-23 |
20220199772 | NANOSHEET SEMICONDUCTOR DEVICES WITH N/P BOUNDARY STRUCTURE - A method of manufacturing a nanosheet field effect transistor (FET) device is provided. The method includes forming a plurality of nanosheet stacks on a substrate, the nanosheet stacks including alternating layers of first type sacrificial layers and active semiconductor layers. The method includes forming the first type sacrificial layer on sidewalls of the nanosheet stacks, then forming a dielectric pillar between the sidewall portions of the first type sacrificial layers of adjacent nanosheet stacks, and then removing the first type sacrificial layer. The method also includes forming a PWFM layer in spaces formed by the removal of the first type sacrificial layer for a first one of the nanosheet stacks, and includes forming a NWFM layer in spaces formed by the removal of the first type sacrificial layer for an adjacent second one of the nanosheet stacks. | 2022-06-23 |
20220199773 | CONDENSED SOURCE OR DRAIN STRUCTURES WITH HIGH GERMANIUM CONTENT - Integrated circuit structures having condensed source or drain structures with high germanium content are described. In an example, an integrated circuit structure includes a vertical arrangement of horizontal nanowires. A gate stack is around the vertical arrangement of horizontal nanowires. A first epitaxial source or drain structure is at a first end of the vertical arrangement of horizontal nanowires. A second epitaxial source or drain structure is at a second end of the vertical arrangement of horizontal nanowires. Each of the first and second epitaxial source or drain structures includes silicon and germanium, with an atomic concentration of germanium greater at a core of the epitaxial source or drain structure than at a periphery of the epitaxial source or drain structure. | 2022-06-23 |
20220199774 | GATE-ALL-AROUND INTEGRATED CIRCUIT STRUCTURES HAVING GERMANIUM-DIFFUSED NANORIBBON CHANNEL STRUCTURES - Gate-all-around integrated circuit structures having germanium-diffused nanowire/nanoribbon channel structures, and methods of fabricating gate-all-around integrated circuit structures having germanium-diffused nanowire/nanoribbon channel structures, are described. For example, an integrated circuit structure includes a vertical arrangement of nanowires above a sub-fin structure, wherein individual ones of the vertical arrangement of nanowires include silicon and germanium, and wherein the sub-fin structure has a relatively higher germanium concentration at a top of the sub-fin structure than at a bottom of the sub-fin structure. | 2022-06-23 |
20220199775 | SEMICONDUCTOR DEVICE - The semiconductor device may include an active pattern provided on a substrate and a source/drain pattern on the active pattern. The source/drain pattern may include a bottom surface in contact with a top surface of the active pattern. The semiconductor device may further include a channel pattern connected to the source/drain pattern, a gate electrode extended to cross the channel pattern, and a fence insulating layer extended from a side surface of the active pattern to a lower side surface of the source/drain pattern. A pair of middle insulating patterns may be at both sides of the bottom surface of the source/drain pattern and between the active pattern and the source/drain pattern in contact with an inner side surface of the fence insulating layer. | 2022-06-23 |
20220199776 | VERTICAL FIELD EFFECT TRANSISTOR WITH CROSSLINK FIN ARRANGEMENT - A semiconductor structure, and a method of making the same, includes a semiconductor substrate having an uppermost surface and a fin structure on the uppermost surface of the semiconductor substrate including n first regions extending perpendicular to the uppermost surface of the semiconductor substrate and n−1 second regions extending between and connecting each of the n first regions and parallel to the uppermost surface of the semiconductor substrate, wherein n≥3. | 2022-06-23 |
20220199777 | ELECTRONIC DEVICE MADE OF CARBON SILICIDE AND METHOD OF MANUFACTURING THE SAME - A electronic device including a stack of a support substrate made of single-crystal SiC having a first surface and of a layer made of single-crystal SiC including a second surface opposite the first surface. The first surface corresponds to a plane of the SiC single crystal of the support substrate and the second surface corresponds to a plane inclined by at least 1° with respect to the plane of the SiC single crystal of the layer. | 2022-06-23 |
20220199778 | SEMICONDUCTOR DEVICE - A semiconductor device includes a semiconductor substrate, a gate insulator provided on a surface of the semiconductor substrate, a bonding film, including silicon or aluminum, provided on the gate insulator, and a gate pad layer provided above the bonding film, wherein the gate pad layer includes titanium in at least a region in contact with the bonding film. | 2022-06-23 |
20220199779 | TRANSISTOR INTERFACE BETWEEN GATE AND ACTIVE REGION - Semiconductor devices including structures of active region are disclosed. An example semiconductor device according to the disclosure includes a substrate, a layer on the substrate and a dielectric layer on the layer. The layer includes an interface in contact with the dielectric layer. The interface includes a first portion on a surface of the layer and a second portion perpendicular to the first portion. | 2022-06-23 |
20220199780 | ENHANCEMENT-MODE SEMICONDUCTOR DEVICE - Disclosed is an enhancement-mode semiconductor device, comprising: a substrate; a p-type semiconductor layer, the p-type semiconductor layer being disposed on the substrate; an n-type semiconductor layer, the n-type semiconductor layer being disposed on the p-type semiconductor layer, a groove being formed in a gate region of the n-type semiconductor layer, and the first groove penetrating the n-type semiconductor layer; a channel layer, the channel layer being conformally disposed on the n-type semiconductor layer and in the first groove; and a barrier layer, the barrier layer being conformally disposed on the channel layer. The enhancement-mode semiconductor device has a simple structure, a good repeatability, and avoids bringing impurities and defects to the channel layer and the barrier layer. | 2022-06-23 |
20220199781 | ENHANCEMENT-MODE SEMICONDUCTOR DEVICE - Disclosed is an enhancement-mode semiconductor device, comprising: a substrate; a p-type nitride semiconductor layer and an n-type nitride semiconductor layer formed on the substrate in sequence, the p-type nitride semiconductor layer having a first protruding structure at a gate region of the p-type nitride semiconductor layer; the n-type nitride semiconductor layer having a first through hole corresponding to the first protruding structure, exposing the gate region of the p-type nitride semiconductor layer; a channel layer conformally disposed on the n-type semiconductor layer and the first protruding structure; a barrier layer, the barrier layer being conformally disposed on the channel layer. The enhancement-mode semiconductor device has a simple structure, a good repeatability, and avoids impurities and defects brought to the channel layer and the barrier layer. | 2022-06-23 |
20220199782 | INTEGRATED ELECTRONICS ON THE ALUMINUM NITRIDE PLATFORM - Gallium nitride high-electron-mobility transistors (GaN HEMTs) are at a point of rapid growth in defense (radar, SATCOM) and commercial (5G and beyond) industries. This growth also comes at a point at which the standard GaN heterostructures remain unoptimized for maximum performance. For this reason, the shift to the aluminum nitride (AlN) platform is disclosed. AlN allows for smarter, highly-scaled heterostructure design that improves the output power and thermal management of GaN amplifiers. Beyond improvements over the incumbent amplifier technology, AlN allows for a level of integration previously unachievable with GaN electronics. State-of-the-art high-current p-channel FETs, mature filter technology, and advanced waveguides, all monolithically integrated with an AlN/GaN/AlN HEMT, is made possible with aluminum nitride. It is on this AlN platform that nitride electronics may maximize their full high-power, highspeed potential for mm-wave communication and high-power logic applications. | 2022-06-23 |