26th week of 2014 patent applcation highlights part 17 |
Patent application number | Title | Published |
20140175400 | Novel Carbazole Derivatives and Organic Light-Emitting Diode Device Using the Same - The present invention relates to novel carbazole derivatives and an organic light-emitting diode device using the same. These carbazole derivatives can simultaneously or singly be used as a hole transporting layer, a host or guest of an emitting layer or an electron transporting layer of an organic light-emitting diode device. | 2014-06-26 |
20140175401 | RED PHOSPHORESCENT COMPOUND AND ORGANIC LIGHT EMITTING DIODE DEVICE USING THE SAME - A red phosphorescent compound has the following formula: | 2014-06-26 |
20140175402 | RED PHOSPHORESCENT COMPOUND AND ORGANIC LIGHT EMITTING DIODE DEVICE USING THE SAME - The present invention provides a phosphorescent compound of one of following formulas: | 2014-06-26 |
20140175403 | Organic Light Emitting Diode Device and Method of Manufacturing the Same - An organic light emitting diode device includes an array substrate including a display region where a plurality of pixel regions each include a light emitting diode, and a non-display region surrounding the display region; and a protection layer covering the display region, extending to the non-display region, and including a round corner, wherein a maximum of a radius of the corner of the protection layer is determined according to a distance between a side of the protection layer and a side of the display region corresponding to the side of the protection layer, and the radius of the corner is at least 0.1 mm. | 2014-06-26 |
20140175404 | OPTICAL FILMS FOR REDUCING COLOR SHIFT AND ORGANIC LIGHT-EMITTING DISPLAY APPARATUSES EMPLOYING THE SAME - Optical films, and organic light-emitting display apparatuses employing the same, include a high refractive index pattern layer including a first surface and a second surface facing each other, wherein the first surface includes a pattern having a plurality of grooves. The plurality of grooves each have a curved surface and a depth greater than a width thereof. The high refractive index pattern layer is formed of a material having a refractive index greater than 1. The optical films, and the organic light-emitting display apparatuses, further include a low refractive index pattern layer formed of a material having a refractive index smaller than the refractive index of the material constituting the high refractive index pattern layer. The low refractive index pattern layer includes a filling material for filling the plurality of grooves. | 2014-06-26 |
20140175405 | ELECTRONIC DEVICE PACKAGE STRUCTURE AND MANUFACTURING METHOD THEREOF - A package structure of an electronic device is provided. The substrate of such package structure has at least one embedded gas barrier structure, which protects the electronic device mounted thereon and offers good gas barrier capability so as to extend the life of the electronic device. | 2014-06-26 |
20140175406 | PHOSPHORESCENT COMPOUNDS AND ORGANIC LIGHT EMITTING DIODE DEVICES USING THE SAME - A phosphorescent compound is disclosed. The phosphorescent compound represented by the following Chemical Formula 1, | 2014-06-26 |
20140175407 | OPTO-ELECTRICAL DEVICES INCORPORATING METAL NANOWIRES - The present disclosure relates to OLED and PV devices including transparent electrodes that are formed of conductive nanostructures and methods of improving light out-coupling in OLED and input-coupling in PV devices. | 2014-06-26 |
20140175408 | HETEROLEPTIC IRIDIUM CARBENE COMPLEXES AND LIGHT EMITTING DEVICE USING THEM - Novel heteroleptic iridium carbene complexes are provided, which contain at least two different carbene ligands. Selective substitution of the carbene ligands provides for phosphorescent compounds hat are suitable for use in a variety of OLED devices. | 2014-06-26 |
20140175409 | TRANSISTORS AND METHODS FOR MAKING THEM - A semiconductor composition which comprises a soluble polyacene semiconductor and a polymeric semiconducting binder the binder having a permittivity greater than 3.4 at 000 Hz. The charge mobility of the semiconducting binder when measured in a pure state is greater than 10 | 2014-06-26 |
20140175410 | TRANSPARENT INFRARED-TO-VISIBLE UP-CONVERSION DEVICE - Embodiments of the invention are directed to a transparent up-conversion device having two transparent electrodes. In embodiments of the invention, the up-conversion device comprises a stack of layers proceeding from a transparent substrate including an anode, a hole blocking layer, an IR sensitizing layer, a hole transport layer, a light emitting layer, an electron transport layer, a cathode, and an antireflective layer. In an embodiment of the invention, the up-conversion device includes an IR pass visible blocking layer, | 2014-06-26 |
20140175411 | ORGANIC EL DEVICE - Organic EL device comprising: anode and cathode disposed to face each other with gap therebetween; functional layer that contains organic material and is disposed between the anode and the cathode; and hole injection layer that has function to inject holes into the functional layer and is disposed between the anode and the functional layer, wherein the hole injection layer is mixture layer containing first oxide and second oxide. The first oxide is p-type metal oxide, the composition of the second oxide contains element that is thermally stable in both first state where the element has the maximum valence and second state where the element has valence smaller than the maximum valence, the element being more thermally stable in the second state than in the first state. The element contained in the composition of the second oxide in the hole injection layer is in the first state. | 2014-06-26 |
20140175412 | ORGANIC LUMINESCENT DISPLAY DEVICE AND METHOD OF MANUFACTURING AT ORGANIC LUMINESCENT DISPLAY DEVICE - A method of manufacturing an organic electroluminescent display device includes the steps of: forming transistors on an element substrate; and forming organic electroluminescent light emitting elements on the respective transistors, in which the step of forming the organic electroluminescent light emitting elements includes the steps of: forming anodes in correspondence with pixels; forming a polymer organic layer made of a polymer material by attaching the polymer material onto upper surfaces and end surfaces of the anodes; forming an organic layer having at least a light emitting layer on the polymer organic layer; and forming a cathode on the organic layer. | 2014-06-26 |
20140175413 | Light-Emitting Element, Light-Emitting Device, Electronic Device, and Lighting Device - An organometallic complex which can be provided at low cost and which emits blue phosphorescence is provided. An organometallic complex in which nitrogen at the 1-position of a 5-aryl-4H-1,2,4-triazole derivative is coordinated to a Group 9 metal or a Group 10 metal, the aryl group is bonded to the Group 9 metal or the Group 10 metal, and the 5-aryl-4H-1,2,4-triazole derivative is a 3-aryl-5,6,7,8-tetrahydro-4H-[1,2,4]triazolo[4,3-a]pyridine derivative is provided. The organometallic complex emits green to blue phosphorescence and is also advantageous in terms of cost. | 2014-06-26 |
20140175414 | ORGANIC SEMICONDUCTOR POLYMER, ORGANIC THIN FILM TRANSISTOR, AND ELECTRONIC DEVICE - An organic semiconductor polymer includes a moiety represented by the following Chemical Formula 1 and a heteroaromatic moiety having at least one of sulfur (S) and selenium (Se). | 2014-06-26 |
20140175415 | POLYMER AND ORGANIC ELECTRONIC DEVICE - A composition comprising a polymer and a phosphorescent material wherein the polymer comprises repeat units of formula (I): | 2014-06-26 |
20140175416 | LEAVING SUBSTITUENT-CONTAINING COMPOUND, ORGANIC SEMICONDUCTOR MATERIAL, ORGANIC SEMICONDUCTOR FILM CONTAINING THE MATERIAL, ORGANIC ELECTRONIC DEVICE CONTAINING THE FILM, METHOD FOR PRODUCING FILM-LIKE PRODUCT, PI-ELECTRON CONJUGATED COMPOUND AND METHOD FOR PRODUCING THE PI-ELECTRON CONJUGATED COMPOUND - A leaving substituent-containing compound including a partial structure represented by the following General Formula (I): | 2014-06-26 |
20140175417 | ORGANIC LIGHT-EMITTING DISPLAY APPARATUS AND METHOD OF MANUFACTURING THE SAME - An organic light-emitting apparatus includes a substrate; a first electrode formed on the substrate, where the first electrode is a cathode, an electron injection layer formed to contact an upper surface of the first electrode and including Mg, an intermediate layer formed on the electron injection layer and including an organic emission layer, and a second electrode which is formed on the intermediate layer and is an anode. | 2014-06-26 |
20140175418 | Light-Emitting Element, Lighting Device, Light-Emitting Device, and Electronic Device - A light-emitting element whose degree of deterioration with driving time is improved and of which emission colors are easily controlled. A light-emitting emitting element having a first electrode, a second electrode, and a layer containing an organic compound located between the first electrode and the second electrode, in which the layer containing the organic compound at least has, from the second electrode side, a light-emitting layer in which a first layer, a second layer, and a third layer are stacked, and a hole-transporting layer provided in contact with the third layer; the first layer contains a first organic compound and a second organic compound; the second layer contains a third organic compound and a fourth organic compound; and the third layer contains the first organic compound and a fifth organic compound. | 2014-06-26 |
20140175419 | FUSED HETEROCYCLIC AROMATIC DERIVATIVE, ORGANIC ELECTROLUMINESCENCE ELEMENT MATERIAL, AND ORGANIC ELECTROLUMINESCENCE ELEMENT USING SAME - A compound represented by the following formula (1). In the formula, A | 2014-06-26 |
20140175420 | COPOLYMERS WITH FUNCTIONALIZED SIDE CHAINS - The present invention relates, inter alia, to copolymers, preferably conjugated polymers, formulations comprising the copolymers and electronic devices comprising the copolymers. | 2014-06-26 |
20140175421 | POLYMERS AND OLIGOMERS WITH FUNCTIONALIZED SIDE GROUPS - The present invention relates inter alia to oligomers and/or polymers with functionalized side groups which are bound to the backbone of the polymer via spacer. | 2014-06-26 |
20140175422 | Deposition of Rutile Films with Very High Dielectric Constant - Anisotropic materials, such as rutile TiO | 2014-06-26 |
20140175423 | THIN FILM TRANSISTOR ARRAY PANEL AND METHOD OF MANUFACTURING THE SAME - A thin film transistor array panel is provided. The thin film transistor array panel includes a substrate, a seed layer positioned on the substrate, and a semiconductor layer positioned on the seed layer, wherein a lattice mismatch between the seed layer and the semiconductor layer is equal to or less than 1.4%. | 2014-06-26 |
20140175424 | THIN FILM TRANSISTOR ARRAY PANEL AND METHOD OF MANUFACTURING THE SAME - A thin film transistor array panel includes: a substrate, a gate line positioned on the substrate and including a gate electrode, a semiconductor layer positioned on the substrate and including an oxide semiconductor, a data wire layer positioned on the substrate and including a data line crossing the gate line, a source electrode connected to the data line, and a drain electrode facing the source electrode, and a capping layer covering the data wire layer, in which an end of the capping layer is inwardly recessed as compared to an end of the data wire layer. | 2014-06-26 |
20140175425 | THIN FILM TRANSISTOR - A thin film transistor includes a substrate and a gate electrode formed on the substrate. A gate insulating layer is formed on the substrate and covers the gate electrode. A channel layer is formed on the gate insulating layer. A GaZnO layer formed on the channel layer. A source electrode and a drain electrode are formed on two opposite ends of the GaZnO layer, respectively. | 2014-06-26 |
20140175426 | THIN FILM TRANSISTOR - A thin film transistor includes a substrate, a gate electrode formed on the substrate and a gate insulating layer formed on the substrate and covering the gate electrode. A first ion capturing layer is formed on the gate insulating layer. A channel layer is formed on the ion capturing layer. And, a source electrode and a drain electrode are electrically connected with the channel layer. | 2014-06-26 |
20140175427 | THIN FILM TRANSISTOR - A thin film transistor includes a substrate and a channel layer formed on an upper surface of the substrate. A source electrode and a drain electrode are formed on an upper surface of the channel layer and located at two opposite ends of the upper surface of the channel layer. A gate insulating layer is located in a middle portion of the upper surface of the channel layer. A gate electrode is located on an upper surface of the gate insulating layer. The thin film transistor further includes a first organic air block layer. The first organic air block layer is formed between the substrate and the channel layer. | 2014-06-26 |
20140175428 | PERPENDICULAR MAGNETORESISTIVE ELEMENTS - A perpendicular magnetoresistive element comprises a novel buffer layer having rocksalt crystal structure interfacing to a CoFeB-based recording layer has (100) plane parallel to the substrate plane and with {110} lattice parameter being slightly larger than the bcc CoFe lattice parameter along {100} direction, and crystallization process of amorphous CoFeB material in the recording layer during thermal annealing leads to form bcc CoFe grains having epitaxial growth with in-plane expansion and out-of-plane contraction. Accordingly, a perpendicular anisotropy, as well as a perpendicular magnetization, is induced in the recording layer. The invention preferably includes materials, configurations and processes of perpendicular magnetoresistive elements suitable for perpendicular spin-transfer torque MRAM applications. | 2014-06-26 |
20140175429 | THIN FILM TRANSISTOR ARRAY PANEL AND METHOD OF MANUFACTURING THE SAME - A thin film transistor array panel may include a channel layer including an oxide semiconductor and formed in a semiconductor layer, a source electrode formed in the semiconductor layer and connected to the channel layer at a first side, a drain electrode formed in the semiconductor layer and connected to the channel layer at an opposing second side, a pixel electrode formed in the semiconductor layer in a same portion of the semiconductor layer as the drain electrode, an insulating layer disposed on the channel layer, a gate line including a gate electrode disposed on the insulating layer, a passivation layer disposed on the source and drain electrodes, the pixel electrode, and the gate line, and a data line disposed on the passivation layer. A width of the channel layer may be substantially equal to a width of the pixel electrode in a direction parallel to the gate line. | 2014-06-26 |
20140175430 | THIN FILM TRANSISTOR AND MANUFACTURING METHOD THEREOF, ARRAY SUBSTRATE, AND DISPLAY DEVICE - The technical disclosure relates to a thin film transistor and a manufacturing method thereof, an array substrate and a display device. The thin film transistor comprises a base substrate, a gate electrode, an active layer, source/drain electrodes, a pixel electrode and one or more insulating layers, wherein at least one of the insulating layers comprises a bottom insulating sub-layer and a top insulating sub-layer, the top insulating sub-layer having a hydrogen content higher than that of the bottom insulating sub-layer. | 2014-06-26 |
20140175431 | SEMICONDUCTOR DEVICE - A first transistor including a channel formation region, a first gate insulating layer, a first gate electrode, and a first source electrode and a first drain electrode; a second transistor including an oxide semiconductor layer, a second source electrode and a second drain electrode, a second gate insulating layer, and a second gate electrode; and a capacitor including one of the second source electrode and the second drain electrode, the second gate insulating layer, and an electrode provided to overlap with one of the second source electrode and the second drain electrode over the second gate insulating layer are provided. The first gate electrode and one of the second source electrode and the second drain electrode are electrically connected to each other. | 2014-06-26 |
20140175432 | SEMICONDUCTOR DEVICE - A semiconductor device includes a transistor including an insulating film, an oxide semiconductor film, a gate electrode overlapping with the oxide semiconductor film, and a pair of electrodes in contact with the oxide semiconductor film; a capacitor including a first light-transmitting conductive film over the insulating film, a dielectric film over the first light-transmitting conductive film, and a second light-transmitting conductive film over the dielectric film; an oxide insulating film over the pair of electrodes of the transistor; and a nitride insulating film over the oxide insulating film. The dielectric film is the nitride insulating film, the oxide insulating film has a first opening over one of the pair of electrodes, the nitride insulating film has a second opening over the one of the pair of electrodes, and the second opening is on an inner side than the first opening. | 2014-06-26 |
20140175433 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - A semiconductor device in which the aperture ratio and which includes a capacitor with increased charge capacity is provided. A semiconductor device in which the number of masks used in a manufacturing process is reduced and the manufacturing costs are reduced is also provided. An impurity is contained in a light-transmitting semiconductor film so that the semiconductor film functions as one of a pair of electrodes in a capacitor. The other pair of electrodes is formed using a light-transmitting conductive film such as a pixel electrode. Further, a scan line and a capacitor line are provided on the same surface and in parallel to each other. An opening reaching the capacitor line and an opening reaching a conductive film which can be formed in the formation of a source electrode or a drain electrode of the transistor can be formed concurrently in an insulating film. | 2014-06-26 |
20140175434 | THIN FILM TRANSISTOR, ARRAY SUBSTRATE AND DISPLAY APPARATUS - A thin film transistor, comprising: a substrate; a first electrode formed on the substrate; a first insulation layer formed on the first electrode; a gate electrode formed on the first insulation layer; a second insulation layer formed on the gate electrode; an active layer penetrating through the first and second insulation layers and electrically isolated from the gate electrode; and a second electrode formed on the active layer and electrically connected to the first electrode through the active layer, wherein the first electrode is one of a source electrode and a drain electrode, and the second electrode is the other of the source electrode and the drain electrode. | 2014-06-26 |
20140175435 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - A semiconductor device having a reduced amount of oxygen vacancy in a channel formation region of an oxide semiconductor is provided. Further, a semiconductor device which includes an oxide semiconductor and has improved electric characteristics is provided. Furthermore, a methods for manufacturing the semiconductor device is provided. An oxide semiconductor film is formed; a conductive film is formed over the oxide semiconductor film at the same time as forming a low-resistance region between the oxide semiconductor film and the conductive film; the conductive film is processed to form a source electrode and a drain electrode; and oxygen is added to the low-resistance region between the source electrode and the drain electrode, so that a channel formation region having a higher resistance than the low-resistance region is formed and a first low-resistance region and a second low-resistance region between which the channel formation region is positioned are formed. | 2014-06-26 |
20140175436 | RESISTOR, DISPLAY DEVICE, AND ELECTRONIC DEVICE - To provide a novel resistor. To provide a display device having a novel structure that can improve its reliability. To provide a display device having a novel structure that can reduce electrostatic discharge damages. The resistor includes a semiconductor layer and an insulating layer formed over the semiconductor layer, and the semiconductor layer is an oxide represented by an In-M-Zn oxide that contains at least indium (In), zinc (Zn), and M (M is a metal such as Al, Ga, Ge, Y, Zr, Sn, La, Ce, or Hf) and the insulating layer contains at least hydrogen. | 2014-06-26 |
20140175437 | Oxide Semiconductor Device and Surface Treatment Method of Oxide Semiconductor - Oxygen defects formed at the boundary between the zinc oxide type oxide semiconductor and the gate insulator are terminated by a surface treatment using sulfur or selenium as an oxygen group element or a compound thereof, the oxygen group element scarcely occurring physical property value change. Sulfur or selenium atoms effectively substitute oxygen defects to prevent occurrence of electron supplemental sites by merely applying a gas phase or liquid phase treatment to an oxide semiconductor or gate insulator with no remarkable change on the manufacturing process. As a result, this can attain the suppression of the threshold potential shift and the leak current in the characteristics of a thin film transistor. | 2014-06-26 |
20140175438 | OXIDE SEMICONDUCTOR FILM AND SEMICONDUCTOR DEVICE - Provided is an oxide semiconductor film which has more stable electric characteristics and essentially consists of indium zinc oxide. In addition, provided is a highly reliable semiconductor device which has stable electric characteristics by using the oxide semiconductor film. The oxide semiconductor film essentially consisting of indium zinc oxide has a hexagonal crystal structure in which the a-b plane is substantially parallel to a surface of the oxide semiconductor film and a rhombohedral crystal structure in which the a-b plane is substantially parallel to the surface of the oxide semiconductor film. | 2014-06-26 |
20140175439 | SEMICONDUCTOR INTEGRATED CIRCUIT AND MULTI-CHIP PACKAGE INCLUDING THE SAME - In an aspect of the present invention, a semiconductor integrated circuit includes a semiconductor chip including a through-chip via, a probe pad disposed in such a way as not to overlap with the through-chip via, and a connection part electrically coupling the probe pad and the through-chip via | 2014-06-26 |
20140175440 | NON-CRYSTALLINE INORGANIC LIGHT EMITTING DIODE - Non-crystalline inorganic light emitting diode. In accordance with a first embodiment of the present invention, an article of manufacture includes a light emitting diode. The light emitting diode includes a non-crystalline inorganic light emission layer and first and second semiconducting non-crystalline inorganic charge transport layers surrounding the light emission layer. The light emission layer may be amorphous. The charge transport layers may be configured to inject one type of charge carrier and block the other type of charge carrier. | 2014-06-26 |
20140175441 | THIN FILM TRANSISTOR ARRAY PANEL AND MANUFACTURING METHOD THEREOF - A thin film transistor array panel includes a substrate, an insulation layer, a first semiconductor, and a second semiconductor. The insulation layer is disposed on the substrate and includes a stepped portion. The first semiconductor is disposed on the insulation layer. The second semiconductor is disposed on the insulation layer and includes a semiconductor material different than the first semiconductor. The stepped portion is spaced apart from an edge of the first semiconductor. | 2014-06-26 |
20140175442 | ARRAY SUBSTRATE FOR FRINGE FIELD SWITCHING MODE LIQUID CRYSTAL DISPLAY DEVICE AND METHOD OF FABRICATING THE SAME - An array substrate for an FFS mode LCD device includes a gate line and a gate pad electrode on a substrate; a common line parallel to the gate line; a data line extending along a second direction in a display area and a data pad electrode disposing in a non-display area; a thin film transistor electrically connected to the gate and data lines; a first passivation layer covering the thin film transistor and the data line; a second passivation layer on the first passivation layer and having a first thickness in the display area and a second thickness in the non-display area; a common electrode on the second passivation layer and connected to the common line; a third passivation layer on the common electrode; and a pixel electrode, a gate auxiliary pad electrode and a data auxiliary pad electrode on the third passivation layer. | 2014-06-26 |
20140175443 | TFT ARRAY SUBSTRATE MANUFACTURING METHOD THEREOF AND DISPLAY DEVICE - According to embodiments of the invention, there are provided a TFT array substrate, a manufacturing method thereof and a liquid crystal display. The manufacturing method comprises manufacturing a pattern including a gate electrode, a gate insulating layer pattern with a via hole, a pattern including an active layer, a pattern including source and drain electrodes and a pattern including a first electrode on a substrate. The formation of the gate insulating layer pattern with the via hole and the pattern including the active layer are completed through one patterning process, the pattern including the gate electrode at least includes the gate electrode and a gate leading wire, the via hole of the gate insulating layer is located over the gate leading wire, and the active layer is located over the gate electrode. | 2014-06-26 |
20140175444 | Semiconductor Device and Manufacturing Method Thereof - A p channel TFT of a driving circuit has a single drain structure and its n channel TFT, a GOLD structure or an LDD structure. A pixel TFT has the LDD structure. A pixel electrode disposed in a pixel portion is connected to the pixel TFT through a hole bored in at least a protective insulation film formed of an inorganic insulating material and formed above a gate electrode of the pixel TFT, and in an interlayer insulating film disposed on the insulation film in close contact therewith. These process steps use 6 to 8 photo-masks. | 2014-06-26 |
20140175445 | THIN FILM TRANSISTOR ARRAY SUBSTRATE - A thin film transistor array substrate includes a substrate, a plurality of pixel elements arranged on the substrate, each of the pixel elements including a thin film transistor and a pixel electrode electrically connected with the thin film transistor, a light shielding electrode disposed between the substrate and the thin film transistor to shield a channel of the thin film transistor, and a storage capacitor including a first electrode and a second electrode disposed opposite to each other. The light shielding electrode includes a transparent electrically-conductive layer and a non-transparent electrically-conductive layer stacked on top of each other. The first electrode of the storage capacitor is disposed in a same layer and of a same material as the transparent electrically-conductive layer of the light shielding electrode. | 2014-06-26 |
20140175446 | ARRAY SUBSTRATE, METHOD FOR MANUFACTURING THE SAME, AND DISPLAY DEVICE - An array substrate includes a GOA circuit area and a display area, the GOA circuit area includes a TFT area and a lead-wire area, the display area includes a data line and a gate line. The GOA circuit area is provided with at least one first via and at least one second via, a data-line metal layer is disposed at the bottom of the at least one first via, and a gate-line metal layer is disposed at the bottom of the at least one second via. The GOA circuit area further includes a first electrode and a second electrode, the data-line metal layer is electrically connected to one electrode through the at least one first via, the gate-line metal layer is electrically connected to the other electrode through the at least one second via, such that a capacitor is formed between the first electrode and the second electrode. | 2014-06-26 |
20140175447 | DISPLAY APPARATUS, METHOD OF DRIVING A DISPLAY, AND ELECTRONIC DEVICE - In a display apparatus including a switching transistor, a correction voltage for eliminating an effect of a variation in a characteristic of a driving transistor is stored in a storage capacitor. The switching transistor is disposed between one current terminal of the driving transistor and a light emitting element. The switching transistor turns off during the non-light emission period thereby to electrically disconnect the light emitting element from the one current terminal of the driving transistor thereby preventing a leakage current from flowing through the light emitting element during the period in which the correction unit operates, and thus preventing the correction voltage from having an error due to the leakage current. | 2014-06-26 |
20140175448 | ARRAY SUBSTRATE, MANUFACTURING METHOD THEREOF AND DISPLAY DEVICE - An array substrate, a manufacturing method thereof and a display device are provided. As for the method of manufacturing the array substrate, the common electrode and the pixel electrode are formed by a single process simultaneously. | 2014-06-26 |
20140175449 | TFT ARRANGEMENT FOR DISPLAY DEVICE - A new TFT arrangement is demonstrated, which enables prevention of TFT to be formed over a joint portion between the adjacent SOI layers prepared by the process including the separation of a thin single crystal semiconductor layer from a semiconductor wafer. The TFT arrangement is characterized by the structure where a plurality of TFTs each belonging to different pixels is gathered and arranged close to an intersection portion of a scanning line and a signal line. This structure allows the distance between regions, which are provided with the plurality of TFTs, to be extremely large compared with the distance between adjacent TFTs in the conventional TFT arrangement in which all TFTs are arranged in at a regular interval. The formation of a TFT over the joint portion can be avoided by the present arrangement, which leads to the formation of a display device with a negligible amount of display defects. | 2014-06-26 |
20140175450 | VERTICAL GAN POWER DEVICE WITH BREAKDOWN VOLTAGE CONTROL - A method for fabricating a vertical GaN power device includes providing a first GaN material having a first conductivity type and forming a second GaN material having a second conductivity type and coupled to the first GaN material to create a junction. The method further includes implanting ions through the second GaN material and into a first portion of the first GaN material to increase a doping concentration of the first conductivity type. The first portion of the junction is characterized by a reduced breakdown voltage relative to a breakdown voltage of a second portion of the junction. | 2014-06-26 |
20140175451 | NORMALLY OFF GALLIUM NITRIDE FIELD EFFECT TRANSISTORS (FET) - A heterostructure field effect transistor (HFET) gallium nitride (GaN) semiconductor power device comprises a hetero-junction structure comprises a first semiconductor layer interfacing it second semiconductor layer of two different band gaps thus generating an interface layer as a two-dimensional electron gas (2DEG) layer. The power device further comprises a source electrode and a drain electrode disposed on two opposite sides of a gate electrode disposed on top of the hetero-junction structure for controlling a current flow between the source and drain electrodes in the 2DEG layer. The power device further includes a floating gate located between the gate electrode an hetero-junction structure, wherein the gate electrode is insulated from the floating gate with an insulation layer and wherein the floating gate is disposed above and padded with a thin insulation layer from the hetero-junction structure and wherein the floating gate is charged for continuously applying a voltage to the 2DEG layer to pinch off the current flowing in the 2DEG layer between the source and drain electrodes whereby the HFET semiconductor power device is a normally off device. | 2014-06-26 |
20140175452 | SUCCESSIVE IONIC LAYER ADSORPTION AND REACTION PROCESS FOR DEPOSITING EPITAXIAL ZNO ON III-NITRIDE-BASED LIGHT EMITTING DIODE AND LIGHT EMITTING DIODE INCLUDING EPITAXIAL ZNO - A method of forming a ZnO layer on a substrate and an LED including a ZnO layer formed by the method are provided. The ZnO layer is formed by using a Successive Ionic Layer Adsorption and Reaction (SILAR) process. The SILAR process includes: applying a first solution to a substrate comprising GaN, to form an inner ionic layer on the substrate and an outer ionic layer on the inner ionic layer; performing a first washing operation on the substrate to remove the outer ionic layer; and applying a second solution to the washed substrate to convert the inner ionic layer into a ZnO oxide layer. | 2014-06-26 |
20140175453 | SEMICONDUCTOR DEVICE, METHOD FOR MANUFACTURING THE SAME, POWER SUPPLY, AND HIGH-FREQUENCY AMPLIFIER - A semiconductor device includes: a first transistor that includes a first gate electrode, a first source electrode, a first drain electrode, and a first nitride semiconductor laminate that includes a first electron transit layer and a first electron supply layer; a second transistor that includes a second gate electrode, a second source electrode, a second drain electrode, and a second nitride semiconductor laminate that includes a second electrode transit layer and a second electron supply layer, the second drain electrode being a common electrode that also serves as the first source electrode, the second electron transit layer having part that underlies the second gate electrode and that contains a p-type dopant; and a p-type-dopant-diffusion-blocking layer. | 2014-06-26 |
20140175454 | DEVICES AND SYSTEMS FOR POWER CONVERSION CIRCUITS - Devices and systems comprising driver circuits are disclosed for MOSFET driven, normally-on gallium nitride (GaN) power transistors. Preferably, a low power, high speed CMOS driver circuit with an integrated low voltage, lateral MOSFET driver is series coupled, in a hybrid cascode arrangement to a high voltage GaN HEMT, for improved control of noise and voltage transients. Co-packaging of a GaN transistor die and a CMOS driver die using island topology contacts, through substrate vias, and a flip-chip, stacked configuration provides interconnections with low inductance and resistance, and provides effective thermal management. Co-packaging of a CMOS input interface circuit with the CMOS driver and GaN transistor allows for a compact, integrated CMOS driver with enhanced functionality including shut-down and start-up conditioning for safer operation, particularly for high voltage and high current switching. Preferred embodiments also provide isolated, self-powered, high speed driver devices, with reduced input losses. | 2014-06-26 |
20140175455 | FIELD-EFFECT TRANSISTOR - The field-effect transistor comprising: a semiconductor laminated structure comprising a first layer of a first nitride semiconductor, a second layer of a second nitride semiconductor having a bandgap larger than that of the first nitride semiconductor, and a two-dimensional electron gas layer; a source electrode; a drain electrode; and a gate electrode disposed over the second layer, the gate electrode being adapted to control the flow of electrons passing through the two-dimensional electron gas layer; a third layer of a p-type nitride semiconductor containing p-type dopant between the gate electrode and the second layer; and a fourth layer of a nitride semiconductor between the third layer and the gate electrode, wherein the fourth layer is in contact with the gate electrode, and wherein the fourth layer is an undoped layer which has a larger bandgap than that of the third layer. | 2014-06-26 |
20140175456 | NITRIDE SEMICONDUCTOR DEVICE - A nitride semiconductor device includes: a first nitride semiconductor layer formed of non-doped Al | 2014-06-26 |
20140175457 | SIC-BASED TRENCH-TYPE SCHOTTKY DEVICE - A SiC-based trench-type Schottky device is disclosed. The device includes: a SiC substrate having first and second surfaces; a first contact metal formed on the second surface and configured for forming an ohmic contact on the substrate; a drift layer formed on the first surface and including a cell region and a termination region enclosing the cell region; a plurality of first trenches with a first depth formed in the cell region; a plurality of second trenches with a second depth less than the first depth; a plurality of mesas formed in the substrate, each defined between neighboring ones of the trenches; an insulating layer formed on sidewalls and bottoms of the trenches; and a second contact metal formed on the mesas and the insulating layer, extending from the cell region to the termination region, and configured for forming a Schottky contact on the mesas of the substrate. | 2014-06-26 |
20140175458 | GRAPHENE STRUCTURE, GRAPHENE DEVICE INCLUDING SAME, AND METHOD OF MANUFACTURING GRAPHENE STRUCTURE - A method of manufacturing a graphene structure, the graphene structure, and a graphene device including the graphene structure, include depositing a metal layer over a silicon carbide substrate; and performing, at a first temperature, a heat treatment on the silicon carbide substrate over which the metal layer is deposited to form a composite layer and a graphene layer on the silicon carbide substrate. The composite layer includes a metal. | 2014-06-26 |
20140175459 | SILICON CARBIDE SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - A SiC semiconductor device includes: a semiconductor switching element having: a substrate, a drift layer and a base region stacked in this order; a source region and a contact region in the base region; a trench extending from a surface of the source region to penetrate the base region; a gate electrode on a gate insulating film in the trench; a source electrode electrically coupled with the source region and the base region; a drain electrode on a back side of the substrate; and multiple deep layers in an upper portion of the drift layer deeper than the trench. Each deep layer has upper and lower portions. A width of the upper portion is smaller than the lower portion. | 2014-06-26 |
20140175460 | SEMICONDUCTOR DEVICES WITH MINIMIZED CURRENT FLOW DIFFERENCES AND METHODS OF SAME - A semiconductor device with minimized current flow differences and method of fabricating same are disclosed. The method includes forming a semiconductor stack including a plurality of layers that include a first layer having a first conductivity type and a second layer having a first conductivity type, in which the second layer is on top of the first layer, forming a plurality of mesas in the semiconductor layer stack, and forming a plurality of gates in the semiconductor layer stack having a second conductivity type and situated partially at a periphery of the mesas, in which the plurality of gates are formed to minimize current flow differences between a current flowing from the first layer to the plurality of mesas at a first applied gate bias and a current flowing from the first layer to the plurality of mesas at a second applied gate bias when voltage is applied to the semiconductor device. | 2014-06-26 |
20140175461 | SIC EPITAXIAL WAFER AND METHOD FOR MANUFACTURING SAME - Provided are a SiC epitaxial wafer in which the surface density of stacking faults is reduced, and a manufacturing method thereof. The method for manufacturing such a SiC epitaxial wafer comprises a step of determining a ratio of basal plane dislocations (BPD), which causes stacking faults in a SiC epitaxial film of a prescribed thickness which is formed on a SiC single crystal substrate having an off angle, to basal plane dislocations which are present on a growth surface of the SiC single crystal substrate, a step of determining an upper limit of surface density of basal plane dislocations on the growth surface of a SiC single crystal substrate used based on the above ratio, and a step of preparing a SiC single crystal substrate which has surface density equal to or less than the above upper limit, and forming a SiC epitaxial film on the SiC single crystal substrate under the same conditions as the growth conditions of the epitaxial film used in the step of determining the ratio. | 2014-06-26 |
20140175462 | Method for Producing a Plurality of Optoelectronic Semiconductor Components in Combination, Semiconductor Component Produced in Such a Way, and Use of Said Semiconductor Component - A method for producing a plurality of optoelectronic semiconductor components in combination is specified. A plurality of radiation-emitting and radiation-detecting semiconductor chips are applied on a carrier substrate. The semiconductor chips are potted with a respective potting compound. The potting compounds are subsequently severed by sawing between adjacent semiconductor chips. A common frame is subsequently applied to the carrier substrate The common frame has a plurality of chambers open toward the top. The frame is arranged in such a way that a respective semiconductor chip is arranged in a respective chamber of the frame. A semiconductor component produced in such a way and the use of the semiconductor component are furthermore specified. | 2014-06-26 |
20140175463 | FLEXIBLE DISPLAY DEVICE AND METHOD OF MANUFACTURING THE SAME - A flexible display device is discussed. The flexible display device according to an embodiment includes an insulating and flexible substrate on which an adhesive layer is formed, a support layer adhered to the substrate via the adhesive layer, a cell array formed above the support layer, defining a plurality of pixel regions, and including a ground line connected to a ground voltage source of an external circuit, a light emitting array including a plurality of light emitting structures formed on the cell array, a sealing layer formed on the cell array, and a buffer layer, a shielding layer, and a bottom insulating layer formed between the support layer and the cell array. The light emitting array emits light toward the sealing layer, and the ground line is connected to the shielding layer through a contact hole to partially expose the shielding layer. | 2014-06-26 |
20140175464 | LIGHT EMITTING DIODE DEVICE - A light emitting diode (LED) device includes a light guiding member having a light incident surface, and an LED light bar mounted on the light incident surface. The LED light bar includes a printed circuit board, LEDs mounted on the printed circuit board, and encapsulating layers formed on the printed circuit board and respectively encapsulating the LEDs therein. Each encapsulating layer includes a light outputting surface away from the printed circuit board. The light incident surface faces the light outputting surface and air between the light incident surface and the light outputting surface is entirely exhausted. | 2014-06-26 |
20140175465 | LIGHT EMITTING DIODE AND METHOD OF FABRICATING THE SAME - Exemplary embodiments of the present invention provide a light emitting diode including a first light emitting cell and a second light emitting cell disposed on a substrate and spaced apart from each other, a first transparent electrode layer disposed on the first light emitting cell and electrically connected to the first light emitting cell, a current blocking layer disposed between a portion of the first light emitting cell and the first transparent electrode layer, an interconnection electrically connecting the first light emitting cell and the second light emitting cell, and an insulation layer disposed between the interconnection and a side surface of the first light emitting cell. The current blocking layer and the insulation layer are connected to each other. | 2014-06-26 |
20140175466 | LED MIXING CHAMBER WITH REFLECTIVE WALLS FORMED IN SLOTS - A relatively large substrate has a reflective surface, such as a diffusive white surface. LED dies, either as bare LED dies or packaged LED dies, are mounted to the substrate to form separate arrays of LEDs. Each array is intended for a separate mixing chamber. A layer of an encapsulant, such as silicone, is deposited over the substrate to encapsulate the LED dies. A laser etches through the encapsulant to form slots, and a reflective material, such as a white paint, is deposited in the slots to form reflective walls of each mixing chamber. If desired, a phosphor layer is deposited over the encapsulant and reflective walls. The substrate is then singulated to separate out the mixing chambers. Since no discrete parts are assembled, and multiple mixing chambers are formed simultaneously, the resulting mixing chambers are inexpensive and very reliable. | 2014-06-26 |
20140175467 | THIN FILM TRANSISTOR ARRAY SUBSTRATE AND METHOD OF MANUFACTURING THE SAME - A method of manufacturing a substrate of a display device is disclosed. The method comprises forming a pixel electrode having a side edge that is under a patterned thermosetting insulating material layer. The method also comprises forming, from the patterned thermosetting insulating material, an insulating layer that covers the side edge of the pixel electrode by heat-treatment of the patterned thermosetting insulating material. As a result of the heat treatment of the patterned thermosetting insulating material, the patterned thermosetting insulating layer melts over the side edge of the pixel electrode. | 2014-06-26 |
20140175468 | MULTI-LENS SOLID STATE LIGHTING DEVICES - Solid state lighting (SSL) devices including a plurality of SSL emitters and methods for manufacturing SSL devices are disclosed. Several embodiments of SSL devices in accordance with the technology include a support having a first lead and a second lead, a plurality of individual SSL emitters attached to the support, and a plurality of lenses. Each SSL emitter has a first contact electrically coupled to the first lead of the support and a second contact electrically coupled to the second lead of the support such that the SSL emitters are commonly connected. Each lens has a curved surface and is aligned with a single corresponding SSL emitter. | 2014-06-26 |
20140175469 | Light-Emitting Device and Manufacturing Method Thereof - Occurrence of a crosstalk phenomenon is prevented in a light-emitting device including a tandem element. The light-emitting device includes an insulating layer, a first lower electrode over the insulating layer, a second lower electrode over the insulating layer, a partition positioned over the insulating layer and between the first lower electrode and the second lower electrode, a first light-emitting unit over the first lower electrode, the partition, and the second lower electrode, intermediate layers over the first light-emitting unit, a second light-emitting unit over the intermediate layer, and an upper electrode over the second light-emitting unit. The partition has a first depression. | 2014-06-26 |
20140175470 | Light-Emitting Device and Method for Manufacturing the Same - The light-emitting device includes a first lower electrode, a second lower electrode, a partition, a layer with high conductivity, light-emitting layers, and an upper electrode. The conductivity of the layer with high conductivity is higher than the conductivity of each of the light-emitting layers and lower than the conductivity of each of the lower electrodes and the upper electrode. The partition includes a first slope located on a first lower electrode side and a second slope located on a second lower electrode side. The thickness of the layer with high conductivity located over the first slope in a direction perpendicular to the first slope is different from the thickness of the layer with high conductivity located over the second slope in a direction perpendicular to the second slope. | 2014-06-26 |
20140175471 | SEMICONDUCTOR LIGHT EMITTING DEVICE AND LIGHT EMITTING MODULE - According to one embodiment, a semiconductor light emitting device includes a plurality of chips, a first insulating layer provided between the chips, one p-side external terminal, and one n-side external terminal. Each of the chips includes a semiconductor layer, a p-side electrode, and an n-side electrode. Each of the chips is separated from each other. The one p-side external terminal is provided corresponding to one chip on the second face side. The p-side external terminal is electrically connected to the p-side electrode. The one n-side external terminal is provided corresponding to one chip on the second face side. The n-side external terminal is electrically connected to the n-side electrode. | 2014-06-26 |
20140175472 | Semiconductor Light Emitting Unit Connected Body - The present disclosure provides a semiconductor light emitting unit connected body, comprising a first light emitting unit having a current supplying layer formed at the bottom; a second light emitting unit having a current supplying layer formed at the bottom and extended into the second light emitting unit; a connecting plate including a conductive portion where the first light emitting unit is placed and a conductive portion where the second light emitting unit is placed; and an electric pass for electrically connecting the first light emitting unit and the second light emitting unit. | 2014-06-26 |
20140175473 | LIGHT EMITTING DIODES INCLUDING LIGHT EMITTING SURFACE BARRIER LAYERS, AND METHODS OF FABRICATING SAME - A light emitting device includes a Light Emitting Diode (LED) having a light emitting surface, a silicon nitride layer on the light emitting surface and a sealed environment surrounding the light emitting surface. The silicon nitride layer may be directly on and cover the light emitting surface. The silicon nitride layer may completely cover the light emitting surface. The silicon nitride layer may provide a substance blocking layer such as a moisture blocking layer and/or a carbon blocking layer that can prevent moisture and/or carbon, such as Volatile Organic Compounds (VOCs) that contain carbon, from reaching the light emitting surface. | 2014-06-26 |
20140175474 | SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD OF MANUFACTURING THE SAME - A method of manufacturing a semiconductor light emitting device, includes: forming a plurality of concave portions on a substrate; injecting silica particles into the plurality of concave portions; and forming a semiconductor layer on the substrate, the semiconductor layer including voids formed in portions of the semiconductor layer, the portions being located above the plurality of concave portions. | 2014-06-26 |
20140175475 | LIGHT EMITTING DEVICE AND METHOD FOR MANUFACTURING SAME - A light emitting device and a method for manufacturing the same are provided. The light emitting device includes: a first substrate having electrical conductivity; a foundation layer; a bonded metal layer configured to bond one major surface of the foundation layer to the first substrate; a mask layer provided on the other major surface of the foundation layer, having a window, and made of an insulator; and a multilayer body selectively provided on the foundation layer exposed to the window, and including a light emitting layer. | 2014-06-26 |
20140175476 | Method of Manufacturing a Light Emitting Diode Comprising a Layer of AIGaN Heterogeneous - The process for the manufacture of a light-emitting diode comprises the following stages: the formation of a stack ( | 2014-06-26 |
20140175477 | EDGE COUPLING ALIGNMENT USING EMBEDDED FEATURES - Methods and systems may provide an alignment scheme for components that may reduce positional deviation between the components. The method may include placing a first component on top of a substrate, wherein the first component includes a receiving alignment feature, and coupling a second component to the first component, wherein the coupling includes inserting a protruding alignment feature of the second component into the receiving alignment feature of the first component. In one example, the first component includes an edge-emitting semiconductor die and the second component include one or more of an optical lens and an alignment frame. | 2014-06-26 |
20140175478 | OPTOELECTRONIC SEMICONDUCTOR COMPONENT AND SCATTERING BODY - An optoelectronic semiconductor component includes one or a plurality of optoelectonic semiconductor chips, and at least one scattering body including a radiation-transmissive matrix material and embedded therein scattering particles composed of a particle material and which is disposed downstream of at least one of the semiconductor chips, wherein, in the event of a temperature change, a difference in refractive index between the matrix material and the particle material changes, and the difference in refractive index between the matrix material and the particle material at a temperature of 300 K is at most 0.15. | 2014-06-26 |
20140175479 | LED UNIT WITH LIGHT MIXING ELEMENT - An LED unit includes an LED, a light mixing element mounted on the LED and a lens covering the light mixing element. The light mixing element is transparent and includes a top face, a bottom face and a circumferential face. Light emitted from the LED with a large output angle is refracted by the bottom face, reflected by the circumferential face and refracted by the top face of the light mixing element to radiate out of the light mixing element with a small light emergent angle. | 2014-06-26 |
20140175480 | LED DIE AND METHOD FOR MANUFACTURING LED INCORPORATING THE SAME - An LED die includes a substrate, a first semiconductor layer, a light emitting layer, a second semiconductor layer, a first electrode and a second electrode. A phosphor layer is formed on the second semiconductor layer. The phosphor layer has a constant thickness at a main light emitting face of the second semiconductor layer. A method for manufacturing an LED incorporating the die is also disclosed. | 2014-06-26 |
20140175481 | WAFER-LEVEL FLIP CHIP DEVICE PACKAGES AND RELATED METHODS - In accordance with certain embodiments, semiconductor dies are at least partially coated with a polymer and a conductive adhesive prior being bonded to a substrate having electrical traces thereon. | 2014-06-26 |
20140175482 | LIGHT EMITTING DIODE PACKAGE WITH LIGHT REFLECTING CUP INTERNALLY SLANTED - An exemplary LED package includes a base, electrodes formed on the base, an LED chip electrically connecting the electrodes, and a reflecting cup mounted on the base and surrounding the LED chip therein. The reflecting cup includes a bottom surface and an inner surface recessed up from the bottom surface and slantwise oriented towards a top end of the reflecting cup. The reflecting cup is annular. The inner surface includes a reflecting portion slantwise extending from the top surface, and a transition portion extending downwardly from the reflecting portion. The transition portion defines a through hole therein. The reflecting portion defines a reflecting hole therein. An angle α is defined between the reflecting portion and an imaginary surface parallel to the bottom surface. An angle β is defined between the reflecting portion and the bottom surface. The angle β is larger than the angle α. | 2014-06-26 |
20140175483 | LIGHT EMITTING DIODE PACKAGE - An LED package includes a first electrode, a second electrode electrically insulated from the first electrode, a reflecting cup connecting the first electrode and the second electrode, and an LED chip. The first electrode includes an elongated first main portion and a first connecting portion bending downwardly from an end of the first main portion. The second electrode includes an elongated second main portion and a second connecting portion bending downwardly from an end of the second main portion. The LED chip is received in reflecting cup. The first main portion and the second main portion are embedded into the receiving cup, the end of the first main portion and the end of the second main portion extend outside the reflecting cup, and the first connecting portion and the second connecting portion are located outside the receiving cup. | 2014-06-26 |
20140175484 | LIGHT EMITTING DIODE PACKAGE - An LED package includes a first electrode, a second electrode, a reflecting cup connecting the first electrode and the second electrode, and an LED chip. The first electrode includes a first main portion and a first connecting portion extending outwardly from the first main portion. The first connecting portion has a first connecting face away from the first main portion. The second electrode includes a second main portion and a second connecting portion extending outwardly from the second main portion. The second connecting portion has a second connecting face away from the second main portion. The first main portion and the second main portion are embedded into the receiving cup, and the first connecting face of the first connecting portion and the second connecting face of the second connecting portion are exposed outside the receiving cup. | 2014-06-26 |
20140175485 | LIGHT EMITTING DIODE WITH ENHANCED LIGHT EXTRACTION - A light-emitting diode includes a substrate, a stacked semiconductor structure on one side of the substrate, and a reflection layer on the other side of the substrate opposite to the stacked semiconductor structure. At least one contact electrode is disposed on the stacked semiconductor structure. The contact electrode includes a pad electrode and at least one finger electrode extending from the pad electrode. A light-guiding structure is disposed along the finger electrode. | 2014-06-26 |
20140175486 | NARROW VIEWING ANGLE PLASTIC LEADED CHIP CARRIER - The PLCC package enables a narrow viewing angle without requiring a second lens by providing the PLCC package with a reflector cup having multiple stages where the geometry or some other characteristic of one stage is different from the geometry or some other characteristic of another stage. | 2014-06-26 |
20140175487 | LIGHT EMITTING DEVICE PACKAGE - A light emitting device package is provided. The light emitting device includes: a substrate; a light emitting device disposed at one side of the substrate; and a formation layer formed on the substrate and having a slope at an edge portion of the formation layer. | 2014-06-26 |
20140175488 | HEAT-CURABLE SILICONE RESIN SHEET HAVING PHOSPHOR-CONTAINING LAYER AND WHITE PIGMENT-CONTAINING LAYER, METHOD OF PRODUCING LIGHT EMITTING DEVICE USING SAME AND ENCAPSULATED LIGHT EMITTING SEMICONDUCTOR DEVICE PRODUCED THEREBY - Provided are a heat-curable silicone resin sheet capable of easily and uniformly dispersing phosphors on an LED element surface and reducing a brightness through a light-diffusing effect, a method of producing a light emitting device using the same and an encapsulated light emitting semiconductor device produced by the corresponding method. The heat-curable silicone resin sheet includes at least two layers that are: a phosphor-containing layer consisting essentially of a phosphor-containing heat-curable silicone resin composition that is in a plastic solid or plastic semi-solid state at room temperature; and a white-pigment-containing layer consisting essentially of a white pigment-containing heat-cured silicone resin composition. | 2014-06-26 |
20140175489 | SEMICONDUCTOR LIGHT EMITTING ELEMENT - A semiconductor light emitting element includes: a laminated semiconductor layer in which an n-type semiconductor layer, a light emitting layer and a p-type semiconductor layer are laminated; plural n-side electrodes that are laminated on the n-type semiconductor layer, electrically connected to the n-type semiconductor layer and arranged to surround at least a partial region of the light emitting layer and the p-type semiconductor layer as viewed from a lamination direction; and a p-side electrode that is provided on the p-type semiconductor layer, provided with a reflective property to light outputted from the light emitting layer and electrically connected to the p-type semiconductor layer, the p-side electrode including a connecting portion, which is used for electrical connection with an outside, at a region surrounded by the plural n-side electrodes as viewed from the lamination direction. | 2014-06-26 |
20140175490 | SILICON-GERMANIUM LIGHT-EMITTING ELEMENT - Provided is an element structure whereby it is possible to produce a silicon-germanium light-emitting element enclosing an injected carrier within a light-emitting region. Also provided is a method of manufacturing the structure. Between the light-emitting region and an electrode there is produced a narrow passage for the carrier, specifically, a one-dimensional or two-dimensional quantum confinement region. A band gap opens up in this section due to the quantum confinement, thereby forming an energy barrier for both electrons and positive holes, and affording an effect analogous to a double hetero structure in an ordinary Group III-V semiconductor laser. Because no chemical elements other than those used in ordinary silicon processes are employed, the element can be manufactured inexpensively, simply by controlling the shape of the element. | 2014-06-26 |
20140175491 | LIGHT EMITTING DEVICE - The light emitting device comprising a light emitting element; and a wavelength converting member having a first face and a second face, in which light emitted from the light emitting element enters in through the first face, and a part of the second face serves as a light emitting face, wherein the light emitting element further comprises a reflection control structure around the light emitting face of the second face, and the reflection control structure comprises a reflection film on the wavelength converting member and an anti-reflection film on the reflection film. | 2014-06-26 |
20140175492 | DENSE-LUMINESCENT-MATERIALS-COATED VIOLET LEDS - Techniques for fabricating and using arrays of violet-emitting LEDs coated with densely-packed-luminescent-material layers together with apparatus and method embodiments thereto are disclosed. | 2014-06-26 |
20140175493 | Light-Emitting Device - A light-emitting device includes a semiconductor light-emitting stack; a current injected portion formed on the semiconductor light-emitting stack; an extension portion having a first branch radiating from the current injected portion and a second branch extending from the first branch; an electrical contact structure between the second branch and the semiconductor light-emitting stack and having a first width; and a current blocking structure located right beneath the electrical contact structure and having a second width larger than the first width. | 2014-06-26 |
20140175494 | SILICONE RESIN COMPOSITION, ENCAPSULATING LAYER, REFLECTOR, AND OPTICAL SEMICONDUCTOR DEVICE - A silicone resin composition includes a cage octasilsesquioxane; a polysiloxane containing alkenyl groups at both ends containing an alkenyl group having the number of moles smaller than the number of moles of the hydrosilyl group of the cage octasilsesquioxane; a hydrosilylation catalyst; a hydroxyl group-containing polysiloxane, organohydrogenpolysiloxane, or a polysiloxane containing alkenyl groups at side chain. | 2014-06-26 |
20140175495 | DIE BONDING METHOD AND DIE BONDING STRUCTURE OF LIGHT EMITTING DIODE PACKAGE - A die bonding method and a die bonding structure of a light emitting diode package are provided. The die bonding structure includes a light transmissive adhesive layer formed on a surface of a base plate of a light emitting diode chip, a first metal layer formed on the adhesive layer, a second metal layer formed on a packaging base plate and multiple metallic compound layers. The metallic compound layers are formed by spreading a third metal layer disposed on at least one of the first metal layer and the second metal layer into the first metal layer and the second metal layer after the third metal layer is heated up. The melting points of the first metal layer and the second metal layer are higher than the melting point of the third metal layer. | 2014-06-26 |
20140175496 | CHIP UNIT AND METHOD FOR MANUFACTURING THE SAME - A chip unit includes a base and two chips. Each chip includes a substrate, a first semiconductor layer, a light emitting layer, a second semiconductor layer and an electrode. The substrate forms a groove in a bottom face thereof and two blocks besides the groove. The base forms a protrusion on a top face thereof and two slots besides the protrusion. The protrusion is fittingly received in the groove, and the two blocks are fittingly received in the two slots, respectively. A method for manufacturing the chip unit is also disclosed. | 2014-06-26 |
20140175497 | LED CHIP WITH GROOVE AND METHOD FOR MANUFACTURING THE SAME - An LED chip includes a substrate and an epitaxy structure formed on the substrate. The epitaxy structure includes a first semiconductor layer, a light emitting layer and a second semiconductor layer. A plurality of grooves are defined through the first semiconductor layer, the light emitting layer and the second semiconductor layer. The light emitting layer is exposed from the grooves. A transparent insulative layer is filled in the grooves. An electrode is further formed on the transparent insulative layer. | 2014-06-26 |
20140175498 | LED CHIP UNIT WITH CURRENT BAFFLE - An LED chip unit includes a base and a chip mounted on the base. The chip includes a substrate, a first semiconductor layer, a light emitting layer, a second semiconductor layer and an electrode. The base forms multiple conductive posts and current baffles therein. Widths of the current baffles gradually decrease from a central portion of the chip towards two lateral portions of the chip. | 2014-06-26 |
20140175499 | LIGHT EMITTING DIODE - An LED includes an LED chip, a substrate, a first electrode and a second electrode formed on the LED chip, and a first solder layer and a second solder layer formed on a top face of the substrate. The first solder layer is soldered on the first electrode and sandwiched between the LED chip and the substrate. The second solder layer is soldered on the second electrode and sandwiched between the LED chip and the substrate. A projection of the first solder layer on the top face of the substrate exceeds a periphery of a projection of the LED chip on the top face of the substrate. A projection of the second solder layer on the top face of the substrate exceeds the periphery of the projection of the LED chip on the top face of the substrate. | 2014-06-26 |