26th week of 2010 patent applcation highlights part 14 |
Patent application number | Title | Published |
20100163760 | MULTI-OPTICAL AXIS PHOTOELECTRIC SENSOR - To ensure satisfactory visibility even when the light emitting area of the light emitting element for displaying the operation state is small. At least one of a light projector or a light receiver is provided with a display portion for displaying an operation state of the multi-optical axis photoelectric sensor at a side position in the vicinity of the light projecting portion or the light receiving portion of the front surface of the housing. The display portion includes a plurality of light emitting elements arranged in a line in the longitudinal direction while facing the front surface of the housing in the housing, and a plurality of light guiding bodies for guiding the light emitted by each of light emitting elements to the front surface of the housing. Each of light guiding bodies is arranged with the incident end face facing the light emitting element and the exit end face facing the front surface of the housing. Each of light guiding bodies includes, in a light guiding path for guiding the light flux entered from the incident end face to the exit end face, at least two reflection surfaces for diffusing some or all of the light flux in a width direction of the housing by sequentially changing an advancing path of the light. | 2010-07-01 |
20100163761 | APPARATUS AND METHOD FOR ENVIRONMENTAL MONITORING - Apparatus ( | 2010-07-01 |
20100163762 | SYSTEM AND METHOD FOR MONITORING CONTROL STATUS OF AN EXHAUST APPARATUS PRESSURE CONTROL SYSTEM - An exhaust pressure control apparatus is disclosed. The exhaust pressure control apparatus including a main body in which an inlet port and an outlet port are formed, the main body also including a pilot chamber. The system also includes a spool comprising an upper slide and a lower slide, the upper slide forming a movable portion of the pilot chamber, and the spool is held by the upper slide and the lower slide so that it can slide in an axial direction over a sliding surface connecting the intake port and the discharge port. A control system regulates a pressure in the intake port by controlling a pressure regulating gas supplied to the pilot chamber, and a control status portion provides an indication of the stability of the control system based upon the pressure in the pilot chamber. | 2010-07-01 |
20100163763 | PILOT OPERATED VACUUM PACKABLE INFLATION SYSTEM - An inflation system that is also used as a safety device to inflate a life-saving device such as a life raft. The inflation system may be manually activated or may be automatically activated as a result of contact with water. The system may include a gas-operated pilot valve having a self-contained small gas supply. The pilot valve is in fluid communication with a gas operated inflation valve. The gas-operated inflation valve includes a gas-actuated activator, an inlet in communication with a gas supply, an outlet and a fluid connection between the gas-operated pilot valve and the gas-actuated activator. The gas-actuated activator is movable from a first position that blocks fluid communication between the inlet and the outlet so as to prevent fluid flow between the inlet and the outlet, to a second position in which there is fluid communication between the inlet and the outlet. On activation, gas from the pilot valve activates a gas-actuated activator releasing a small self-contained gas supply in the pilot valve in response to the activation event, which in turn activates a gas-actuated activator in the gas-operated inflation valve, resulting in opening of the gas operated inflation valve and releasing gas from the gas supply to inflate the life raft. | 2010-07-01 |
20100163764 | IMPROVEMENTS IN OR RELATING TO WATER DELIVERY DEVICES - An adaptor for a water delivery device to avoid water wastage by the provision of two durations of water flow, comprising a tap head, a tap body and a plunger, the plunger being slidably mounted within the body so as to be movable from a closed position to both a first open position and a second open position; resilient means being arranged to return the plunger from either open position to said closed position, the adapter being arranged such that the return to the closed position from said first and second open positions takes different lengths of time, and adjustment means arranged to adjust the ratio between the length of time for the plunger to return to the closed position from the first open position and the length of time for the plunger to return to the closed position from the second open position. | 2010-07-01 |
20100163765 | PNEUMATIC VALVE ACTUATOR HAVING INTEGRAL STATUS INDICATION - A pneumatic valve actuator having integral status indication includes an actuator housing with a recessed bore and a visual indicator coupled to a piston within a cylinder. An actuating pressure chamber is located also within the cylinder. The piston reciprocates in the cylinder in response to fluid pressure build-up in the actuating pressure chamber, and the visual indicator reciprocates within the bore. The visual indicator coupled to the piston can be in a retracted configuration when actuating pressure is not present in the pressure chamber and can be in an extended configuration when actuating pressure is presented in the pressure chamber. The visual indicator, which can have a portion that extends outside the bore colored to provide an indication of the operating state of the valve. | 2010-07-01 |
20100163766 | BISTABLE VALVE - A bistable valve ( | 2010-07-01 |
20100163767 | Valve - A valve having at least one first valve chamber ( | 2010-07-01 |
20100163768 | Electromechanical Vlave - An electromechanical valve ( | 2010-07-01 |
20100163769 | FLOW CONTROL VALVE FOR FLUIDIZED MATERIAL - “A flow control valve for fluidized material comprises a valve housing having a valve chamber with a valve seat and a valve plug having a flow passage, the valve plug being arranged inside the valve chamber in front of the valve seat ( | 2010-07-01 |
20100163770 | FLOW ADJUSTMENT VALVE - The invention relates to a flow adjustment valve ( | 2010-07-01 |
20100163771 | LONGITUDINAL BULGING SEAL FOR SPRAY GUN | 2010-07-01 |
20100163772 | ACTUATOR - In one embodiment, a fluid driven actuation system is provided having a turbine and an actuation member with cooperating surfaces. In one form the fluid is fuel. The turbine may move when fluid is flowed through the actuation member thereby causing the actuation member to move by action of the cooperating threaded surfaces. A movable nozzle may also be provided to direct fluid flowing through actuation member and may be used to cause the turbine to move. A spring may be provided to create a biasing force in the nozzle. | 2010-07-01 |
20100163773 | FIXING SYSTEM AND JOINT, FOR FIXING AN ACTUATOR TO A VALVE - An actuator ( | 2010-07-01 |
20100163774 | Fluid Control Valve - A valve includes a body, a throttling ball, and a shoe. The body includes an upstream flow passage and a downstream flow passage in fluid communication with an interior cavity of the body. The throttling ball is rotatable within the interior cavity on an axis to adjust the valve from a closed position to an open position and includes a fluid conduit extending through the throttling ball, where the fluid conduit is alignable with the upstream flow passage and the downstream flow passage. The shoe is disposed in the cavity abutting an interior surface of the cavity and includes a fluid passage there through having an inlet being alignable with the flow conduit of the throttling ball and an outlet being alignable with the downstream flow passage of the body. The interior surface of the shoe is disposed adjacent to and tracking an external surface of the throttling ball. | 2010-07-01 |
20100163775 | Valve Sealant Fitting - Disclosed is a valve sealant fitting of high quality, which not only ensures rapid and easy injection of a sealant but also maximizes an effect of preventing a leakage. That is, the present invention provides a valve sealant fitting, which comprises, sequentially assembles and couples: a sealant body | 2010-07-01 |
20100163776 | AZEOTROPIC AND AZEOTROPE-LIKE COMPOSITIONS OF E-1,1,1,4,4,4-HEXAFLUORO-2-BUTENE - Azeotropic or azeotrope-like compositions are disclosed. The azeotropic or azeotrope-like compositions are mixtures of E-1,1,1,4,4,4-hexafluoro-2-butene with methyl formate, n-pentane, 2-methylbutane trans-1,2-dichloroethylene, 1,1,1,3,3-pentafluoropropane, n-butane or isobutane. Also disclosed is a process of preparing a thermoplastic or thermoset foam by using such azeotropic or azeotrope-like compositions as blowing agents. Also disclosed is a process of producing refrigeration by using such azeotropic or azeotrope-like compositions. Also disclosed is a process of using such azeotropic or azeotrope-like compositions as solvents. Also disclosed is a process of producing an aerosol product by using such azeotropic or azeotrope-like compositions. Also disclosed is a process of using such azeotropic or azeotrope-like compositions as heat transfer media. Also disclosed is a process of extinguishing or suppressing a fire by using such azeotropic or azeotrope-like compositions. Also disclosed is a process of using such azeotropic or azeotrope-like compositions as dielectrics. | 2010-07-01 |
20100163777 | MAGNETIC PARTICLES AND PROCESS FOR THEIR PRODUCTION - Magnetic particles containing a magnetic material and a biodegradable polymeric compound; the magnetic particles having average particle diameter in the range of from 10 nm or more to 1,000 nm or less. | 2010-07-01 |
20100163778 | SIMPLE METHOD FOR INTRODUCING MAGNETIC PARTICLES INTO A POLYMER - The present invention provides a simple method for introducing magnetic particles into a polymer for further preparing a magnetic polymer, the method using the capability of polymer to absorb Fe | 2010-07-01 |
20100163779 | NI-ZN-CU FERRITE PARTICLES, GREEN SHEET COMPRISING THE NI-ZN-CU FERRITE PARTICLES AND NI-ZN-CU FERRITE SINTERED CERAMICS - A Ni—Zn—Cu ferrite material having excellent DC bias characteristics is provided by adding zinc silicate thereto. The above problem can be solved by Ni—Zn—Cu ferrite particles which comprise a spinel-type ferrite and zinc silicate, which have a composition comprising 36.0 to 48.5 mol % of Fe | 2010-07-01 |
20100163780 | Process for Production of Dichlorotrifluoroethane - A process for the production of dichlorotrifluoroethane is described. The process comprises reacting perchloroethylene with hydrogen fluoride (HP) at elevated temperature in the vapour phase in at least one reactor in the presence of a fluorination catalyst. The process is operated so that 30 weight % or more of the perchloroethylene reactant that is fed to the at least one reactor remains unreacted having passed through the or each reactor. The dichlorotrifluoroethane may be purified and then used as it is or used to prepare pentafluoroethane. | 2010-07-01 |
20100163781 | PROCESS - A process for isomerising a (hydrohalo)fiuoroalkene, the process comprising contacting the (hydrohalo)fluoroalkene with a catalyst comprising an unsupported Lewis acid, a chromia-containing catalyst containing at least one additional metal, an alumina, a supported liquid catalyst, and mixtures thereof. | 2010-07-01 |
20100163782 | Carbon-Containing Metal-Based Composite Material and Manufacturing Method Thereof - A carbon-containing metal-based composite material and a manufacturing method thereof are provided. The carbon-containing metal-based composite material includes a plurality of graphites, a plurality of heat-conducting reinforcements and a metal matrix. The graphites occupy 35%˜90% in volume. The heat-conducting reinforcements are distributed between the graphites. The heat-conducting reinforcements and the graphites are self-bonded. The heat-conducting reinforcements occupy 5%˜30% in volume and have a thermal conductivity larger than 200 W/mK. The metal matrix is filled between the heat-conducting reinforcements and the graphites, and the metal matrix occupies 5%˜35% in volume. | 2010-07-01 |
20100163783 | High thermal-conductive, halogen-free, flame-retardant resin composition, and prepreg and coating thereof - A high thermal-conductive, halogen-free and flame-retardant resin composition used as a dielectric layer of a printed circuit board comprises 5% to 70% of phosphorus-containing epoxy resin, at most 50% of multifunctional or bifunctional epoxy resin, 1% to 20% of curing agent, 0.01% to 10% of accelerant, at most 20% of inorganic powder, 5% to 85% of high thermal conductivity powder and 0.01% to 10% of processing aids, which resin composition has excellent thermal conductivity, heat resistance and flame retardancy as well as being environmentally friendly for free of halogen flame retardant and no toxic or corrosive gases when burning; the resin composition is used to form as a high thermal-conductive prepreg by impregnation or form as a high thermal-conductive coating by coating and then further used as a dielectric layer on a printed circuit board for demonstrating if electronic components formed thereon the printed circuit board has high thermal-conductivity and efficient heat dissipation capable of improving long service life and enhanced stability of electronic components. | 2010-07-01 |
20100163784 | Polishing Composition for Planarizing Metal Layer - A polishing composition of the present invention at least comprises about 750 ppm to less than 5000 ppm by weight of abrasive particles, hydrogen peroxide, an accelerator, a dual-corrosion inhibitor and water, wherein the dual-corrosion inhibitor contains a first and a second corrosion inhibitor. The dual-corrosion inhibitor is applied to the planarization of metal layers so as to maintain a high removal rate of metal layers as well as suppress etching of the metal, thus capable of reducing polishing defects such as dishing, erosion and the like. | 2010-07-01 |
20100163785 | DISPERSION COMPRISING CERIUM OXIDE, SILICON DIOXIDE AND AMINO ACID - A dispersion comprising particles of cerium oxide and colloidal silicon dioxide and in each case one or more aminocarboxylic acids and/or salts thereof, where the zeta potential of the silicon dioxide particles is negative and that of the cerium oxide particles is positive or equal to zero, and the zeta potential of the dispersion is negative overall, the mean diameter of the • cerium oxide particles is not more than 200 nm silicon dioxide particles is less than 100 nm, the content, based in each case on the total amount of the dispersion, of • cerium oxide particles is from 0.1 to 5% by weight silicon dioxide particles is from 0.01 to 10% by weight and • aminocarboxylic acid or salt thereof is from 0.01 to 5% by weight and —the pH of the dispersion is from 7.5 to 10.5. | 2010-07-01 |
20100163786 | Polishing composition for semiconductor wafer - A polishing composition for semiconductor wafer polishing comprising, colloidal silica prepared from an active silicic acid aqueous solution obtained by removal of alkali from alkali silicate and at least one nitrogen containing basic compound selected from a group consisting of ethylenediamine, diethylenediamine, imidazole, methylimidazole, piperidine, morpholine, arginine, and hydrazine, wherein pH of the colloidal silica is of 8.5 to 11.0 at 25° C. by containing quaternary ammonium hydroxide. | 2010-07-01 |
20100163787 | POLISHING COMPOSITION - A polishing composition of the invention is a polishing composition which is suitable for polishing a metal film, which is so-called final polishing, and contains colloidal silica having an average particle size of 20 nm or more and less than 80 nm which is determined by particle size distribution measurement using a light scattering method as abrasive grains; and at least one selected from iodic acid and its salt as an oxidizing agent, with the balance of water. By containing such components, the polishing composition shows non-selectivity, while being sufficiently suppressed in dishing and erosion. | 2010-07-01 |
20100163788 | LIQUID CLEANER FOR THE REMOVAL OF POST-ETCH RESIDUES - Cleaning compositions and processes for cleaning post-plasma etch residue from a microelectronic device having said residue thereon. The composition achieves highly efficacious cleaning of the residue material, including titanium-containing, copper-containing, tungsten-containing, and/or cobalt-containing post-etch residue from the microelectronic device while simultaneously not damaging the interlevel dielectric, metal interconnect material, and/or capping layers also present thereon. In addition, the composition may be useful for the removal of titanium nitride layers from a microelectronic device having same thereon. | 2010-07-01 |
20100163789 | CALCIUM CARBONATE SCALE INHIBITOR AND REMOVER FOR FRESHWATER AND SEAWATER FLUSHED SANITARY WASTE SYSTEMS - A powder formulation containing biodegradable organic compounds which will not bioaccumulate or pollute, allow for the safe and effective room temperature elimination of scale from freshwater and seawater flushed toilets and sanitary waste systems. The formulation mixes readily with water and removes only scales and deposits, not the underlying materials of construction. The formulation is non-toxic, non-caustic, non-flammable, and contains no mineral acids. | 2010-07-01 |
20100163790 | OXIDE COATINGS ON LITHIUM OXIDE PARTICLES - The present invention generally relates to unique coatings for use with energy storage particles, such as lithium oxide energy storage materials. The invention provides unique coatings for particles, unique particle/coating combinations, and unique methods for making coatings and/or coated particles. In one aspect of the invention, a particle is formed having a core and a coating. The particle may comprise a core having a material such as LiFePO | 2010-07-01 |
20100163791 | Porous Silicon-Containing Carbon-Based Composite Material, Electrode and Battery Formed Therefrom - The present invention relates to a porous silicon-containing carbon-based composite material produced by carbonizing both (1) a silicon metal or a silicon-containing compound and (2) an organic compound containing no silicon atoms and having a softening point or a melting point, in an inert gas or in a vacuum at a temperature ranging from 300 to 1,500° C. The porous silicon-containing carbon-based composite material of the present invention can be used as an electrode of a battery. Thereby, a battery which has an increased reversible capacity and stable charge and discharge cycle characteristics, and has a reduced loss of potential at the time of discharging lithium can be produced with a simple production process. | 2010-07-01 |
20100163792 | PROCESSES FOR PREPARING FERTILIZED EGG COMPONENTS - The invention relates to processes for preparing fertilized egg components using freeze-drying and/or extraction methods. | 2010-07-01 |
20100163793 | Heterogeneous catalysts for transesterification of triglycerides and preparation methods of same - This invention belongs to the field of catalysts for the transesterification of triglycerides, for the production of fatty acid glycerin and esters. This invention describes preparatory methods using solid catalysts and the formulation of these catalysts for the production of fatty acid esters, glycerin, and specifically, biodiesel through the heterogeneous transesterification reaction of triglycerides present in vegetable oils and fats, like soy, cotton seed, canola, castor, peanut oils and animal fat. The solid catalysts of this invention are sufficiently magnetic to use in the production of biodiesel from vegetable oils and fats, not only because they work in a similar fashion as state of the art catalysts, but also because of the low cost of the raw materials used in its production. The invention even describes the composition obtained by using the catalysts, in which the purity of the products, such as biodiesel and glycerin is greater than 96.5%. | 2010-07-01 |
20100163794 | Oxidizing composition including a gel layer - A composition that generates and releases a biocidal solution comprising at least chlorine dioxide and free halogen is presented. The composition comprises reactants capable of in-situ generation of chlorine dioxide and free halogen donor, and a gelling agent that slows the rate of dissolution of the reactants, thereby increasing yield and providing a controlled release of biocidal solution. The compositions of the invention show improved environmental stability which can reduce the cost of packaging. The controlled release allows the use in multi-tablet chemical dispensers which may otherwise induce potentially explosive conditions or allow rapid release of the biocidal solution thereby inducing a spike in chemical concentration rather than a sustained release. | 2010-07-01 |
20100163795 | Resin Composition - The present invention provides a resin composition comprising a thermoplastic resin (A), an inorganic compound having a volume resistance of less than about 10 | 2010-07-01 |
20100163796 | LIQUID-CRYSTALLINE POLYESTER RESIN COMPOSITION AND CONNECTOR USING THE SAME - A liquid-crystalline polyester resin composition is provided including a liquid-crystalline polyester obtained by polymerizing monomers of an aromatic hydroxycarboxylic acid in the presence of an imidazole compound. The composition also includes a mica which is a muscovite and has a volume average particle diameter of 40 μm or less and a specific surface area of 6 m | 2010-07-01 |
20100163797 | Thulium-Containing Fluorescent Substance For White Light Emitting Diode And Manufacturing Method Thereof - Disclosed is a thulium-containing fluorescent substance for a white light emitting diode represented by a following chemical formula 1, (Chemical Formula 1) (M1-X-J7Eu | 2010-07-01 |
20100163798 | SEMICONDUCTOR NANOPARTICLE PHOSPHOR INCLUDING NANOPARTICLE CORE COMPOSED OF GROUP-XIII AND -XV SEMICONDUCTOR AND FIRST SHELL AND SECOND SHELL FOR COATING THE SAME - A semiconductor nanoparticle phosphor includes a nanoparticle core composed of a group-XIII and -XV semiconductor, a first shell for coating the nanoparticle core, and a second shell for coating the first shell, a difference in a lattice constant between the nanoparticle core and the second shell being smaller than a difference in the lattice constant between the nanoparticle core and the first shell, or the first shell being smaller in the lattice constant than the nanoparticle core and the second shell being greater in the lattice constant than the nanoparticle core, or the first shell being greater in the lattice constant than the nanoparticle core and the second shell being smaller in the lattice constant than the nanoparticle core. | 2010-07-01 |
20100163799 | CORRECTING FLUID WITH DRYING INDICATOR - A correcting fluid with a colored drying indicator that includes as fluorescent dye, sodium 8-hydroxy-1,3,6-pyrenetrisulfonate and a good solvent for the fluorescent dye, in which the solubility of the fluorescent dye at 20° C. is at least equal to 0.1 g/l, and, a poor solvent for the fluorescent dye, in which the solubility of the fluorescent dye is less than or equal to 0.01 g/l at 20° C., the poor solvent being miscible with the good solvent for the fluorescent dye. | 2010-07-01 |
20100163800 | Monodisperse Core/Shell and Other Complex Structured Nanocrystals and Methods of Preparing the Same - The present invention provides new compositions containing nearly monodisperse colloidal core/shell semiconductor nanocrystals with high photoluminescence quantum yields (PL QY), as well as other complex structured semiconductor nanocrystals. This invention also provides new synthetic methods for preparing these nanocrystals, and new devices comprising these compositions. In addition to core/shell semiconductor nanocrystals, this patent application also provides complex semiconductor nanostructures, quantum shells, quantum wells, doped nanocrystals, and other multiple-shelled semiconductor nanocrystals. | 2010-07-01 |
20100163801 | Odorant for Hydrogen Based on Acrylate and Methyl Salicylate - The present invention concerns a nitrogen-free and sulfur-free odorant for hydrogen gas containing at least one acrylic acid CrC6-alkyl ester and methyl salicylate, its use for the odorisation of hydrogen gas, a process for the odorisation of hydrogen gas and hydrogen gas containing an odorant according to the invention. | 2010-07-01 |
20100163802 | HYDROGEN SUPPLY DEVICE AND METHOD OF SUPPLYING HYDROGEN - A hydrogen supply device and a method of supplying hydrogen are provided in which a hydrogen gas odorized with the odor agent is supplied by applying heat to a granular mixture of hydrogen storage glass beads and odor agent encapsulating capsules using irradiation with infrared light emitted from a light source. | 2010-07-01 |
20100163803 | PRODUCTION OF GAS PRODUCTS FROM RAW SYNTHESIS GAS - The invention relates to a process for the production of gas products from a raw synthesis gas (feedstock) that is obtained by gasification of carbon and/or heavy oil and that contains largely soot-free hydrogen (H | 2010-07-01 |
20100163804 | METHOD AND SYSTEM FOR SUPPLYING SYNTHESIS GAS - A method for supplying synthesis gas comprising reacting a carbonaceous feed with an oxidant, to generate synthesis gas; forwarding all or part of the generated synthesis gas to an underground storage location, to generate a synthesis gas buffer; and retrieving synthesis gas from the underground storage location and supplying the retrieved synthesis gas to a downstream processing unit, which downstream processing unit is substantially continuously converting synthesis gas. | 2010-07-01 |
20100163805 | Agent-containing media and methods therefor - The present invention generally relates to various media for protecting antioxidants contained therein from degradation before use. More particularly, the present invention relates to media which are to be dissolved in a fluid before use and to protect antioxidants contained therein from ultraviolet rays and from degradation caused by a prolonged period of dissolution in the fluid. To this end, such media include various fillers to protect the antioxidants from the ultraviolet rays. The present invention also relates to various media capable of promoting mixing of the antioxidants in the fluid. The present invention also relates to various methods of protecting such antioxidants contained in the media from such rays and various methods of promoting mixing between the fluid and antioxidants and/or fillers. The present invention further relates to various processes for providing various media protecting the antioxidants contained therein, various processes for fabricating such media capable of promoting the dissolution of the antioxidants and/or fillers into the fluid, and the like. | 2010-07-01 |
20100163806 | Tunable Fluorescent Gold Nanocluster And Method for forming the same - The present invention discloses a tunable fluorescent gold nanocluster. The tunable fluorescent gold nanocluster is formed by mixing gold trichloride (AuCl | 2010-07-01 |
20100163807 | Silicon Wafer and Method Of Manufacturing The Same - A silicon wafer in which both occurrences of slip dislocation and warpage are suppressed in device manufacturing processes is a silicon wafer having BMDs having an octahedral shape, wherein BMDs located at a position below the silicon wafer surface to a depth of 20 μm and having a diagonal length of 200 nm or more are present at a concentration of ≦2×10 | 2010-07-01 |
20100163808 | HIGHLY CONDUCTIVE AND STABLE TRANSPARENT CONDUCTING POLYMER FILMS - The invention relates to a process for the synthesis of conducting polymer films by vapour phase polymerization. The invention relates particularly to the synthesis of polymerized thiophene films, for example poly(3,4-ethylenedioxythiophene) (PEDOT) films. | 2010-07-01 |
20100163809 | BRANCHED POLYDIORGANOSILOXANE POLYAMIDE COPOLYMERS - Branched polydiorganosiloxane polyamide, block copolymers and methods of making the copolymers are provided. The method of making the copolymers involves reacting one or more amine compounds including at least one polyamine with a precursor having at least one polydiorganosiloxane segment and at least two ester groups. | 2010-07-01 |
20100163810 | METAL INKS - Self-reducing metal inks and systems and methods for producing and using the same are disclosed. In an exemplary embodiment, a method may comprise selecting a metal-organic (MO) precursor, selecting a reducing agent, and dissolving the MO precursor and the reducing agent in an organic solvent to produce a metal ink that remains in a liquid phase at room temperature. Metal inks, including self-reducing and fire-through metal inks, are also disclosed, as are various applications of the metal inks. | 2010-07-01 |
20100163811 | Organic Layer Photosensitive Resin Composition and Organic Layer Fabricated Using Same - Disclosed is an organic layer photosensitive resin composition and an organic layer fabricated using the same. The organic layer photosensitive resin composition includes (A) an organic binder resin, (B) a reactive unsaturated compound, (C) a polymerization initiator, (D) a black pigment including a lactam-based black pigment, and (E) a solvent. | 2010-07-01 |
20100163812 | INK COMPOSITION FOR COLOR FILTER - An ink composition for a color filter is provided. The ink composition comprises a pigment, a binder resin, a polymerizable monomer and a melamine compound. The melamine compound has a weight average molecular weight of 126 to 5,000. The melamine compound is represented by Formula 1: | 2010-07-01 |
20100163813 | Long wavelength shifted benzotriazole uv-absorbers and their use - The instant invention relates to novel benzotriazole UV-absorbers having a long wavelength shifted absorption spectrum with significant absorbance up to 410-420 nm. Further aspects of the invention are a process for their preparation, a UV stabilized composition containing the new UV-absorbers and the use of the new compounds as UV-light stabilizers for organic materials. | 2010-07-01 |
20100163814 | Stabilization of Polycarbonates and polycarbonate Blends - The invention relates to the use of a specific hindered amine (hindered amine light stabilizer, HALS) and a specific benzotriazole UV absorber for the stabilization of polycarbonates and of polycarbonate blends, in particular of polycarbonate/acrylonitrile-butadiene-styrene (PC/ABS) blends, with respect to UV radiation. | 2010-07-01 |
20100163815 | TAPERED BRAKING DEVICE FOR ELECTRIC WINCHES - The present invention discloses a tapered braking device for electric winches which disposes a section of gear shaft, a section of core shaft, a wedge shape support, braking plates, an elastic element, a wedge shape piece A, a wedge shape piece B, a braking clutch base and so on in a gear box of an electric winch. When a motor works, the section of core shaft of the motor can drive the braking clutch base and the wedge shape pieces A, B to rotate, until a gap is formed between the friction faces of the wedge shape support and the wedge shape piece B and the braking plates so that the braking action stops. When the motor suddenly stops, a heavy load lifted by a tight wire rope reel provides a reverse pulling force so that the wedge shape piece B produces a reverse thrust force to push the friction faces of the braking plates, so the braking effect is achieved quickly. Based on the braking plates with the double tapered faces, the present invention can increase the braking area and the braking force and achieve safe braking. Furthermore, worn parts concentrate in the braking plates, so it only needs to replace the braking plates made of friction materials, which can simplify maintenance, reduce the costs and ensure service life of the gear box. | 2010-07-01 |
20100163816 | ELEVATOR BRAKE WITH COMPOSITE BRAKE HUB - An elevator brake ( | 2010-07-01 |
20100163817 | SELF-HEATING PHASE CHANGE MEMORY CELL ARCHITECTURE - A method for manufacturing a phase change memory includes forming a phase change memory cell by forming a phase change layer between two switching layers. The phase change layer is separated from thermal heat sinks, such as the bitline or wordline, by the switching layers. | 2010-07-01 |
20100163818 | FORMING A CARBON PASSIVATED OVONIC THRESHOLD SWITCH - By making an ovonic threshold switch using a carbon interfacial layer having a thickness of less than or equal to ten percent of the thickness of the associated electrode, cycle endurance may be improved. In some embodiments, a glue layer may be used between the carbon and the chalcogenide of the ovonic threshold switch. The glue layer may be effective to improve adherence between carbon and chalcogenide. | 2010-07-01 |
20100163819 | RESISTIVE MEMORY DEVICE AND METHOD FOR FABRICATING THE SAME - A resistive memory device and a fabrication method thereof are provided. The fabrication method includes: providing a substrate; forming a lower electrode over the substrate; forming a variable resistive material layer over the lower electrode; forming an ion implantation region to a predetermined depth from a surface of the variable resistive material layer by implanting metal ions or oxygen ions to the surface of the variable resistive material layer; and forming an upper electrode over the variable resistive material layer including the ion implantation region. | 2010-07-01 |
20100163820 | PHASE CHANGE MEMORY DEVICE HAVING A REDUCED CONTACT AREA AND METHOD FOR MANUFACTURING THE SAME - A phase change memory device having a reduced contact area and a method for manufacturing the same is presented. The phase change random access memory device includes a bottom electrode contact pattern layer, and at least one phase change pattern layer formed on a sidewall of the bottom electrode contact pattern layer. The contact areas are minimized by being between the narrow width of the bottom electrode contact pattern layer, i.e., at the sidewall, and the phase change pattern layers. As a result the minimized contact area is proportional to the thickness of the bottom electrode contact pattern layer. | 2010-07-01 |
20100163821 | VERTICAL DIODE AND METHOD FOR MANUFACTURING SAME AND SEMICONDUCTOR MEMORY DEVICE - In a vertical diode, an N | 2010-07-01 |
20100163822 | OVONIC THRESHOLD SWITCH FILM COMPOSITION FOR TSLAGS MATERIAL - A chalcogenide alloy that optimizes operating parameters of an ovonic threshold switch includes an atomic percentage of arsenic in the range of 9 to 39, an atomic percentage of germanium in the range of 10 and 40, an atomic percentage of silicon in the range of 5 and 18, an atomic percentage of nitrogen in the range of 0 and 10, and an alloy of sulfur, selenium, and tellurium. A ratio of sulfur to selenium in the range of 0.25 and 4, and a ration of sulfur to tellurium in the alloy of sulfur, selenium, and tellurium is in the range of 0.11 and 1. | 2010-07-01 |
20100163823 | RESISTIVE RANDOM ACCESS MEMORY - A resistive memory device includes a first electrode, a resistive oxidation structure and a second electrode. The resistive oxidation structure has sets of oxidation layers stacked on the first electrode. Each set is made up of a first metal oxide layer and a second metal oxide layer which is disposed on and is thinner than the first metal oxide layer. The first metal oxidation layer of the first one of the sets of oxidation layers contacts an upper surface of the first electrode. The second electrode is formed on the resistive oxidation structure. The resistance of the oxidation structure can be changed by an electric field | 2010-07-01 |
20100163824 | MODULATION OF RESISTIVITY IN CARBON-BASED READ-WRITEABLE MATERIALS - In a first aspect, a method of forming a memory cell is provided that includes (1) forming a metal-insulator-metal (“MIM”) stack above a substrate, the MIM stack including a carbon-based switching material having a resistivity of at least 1×10 | 2010-07-01 |
20100163825 | FORMING PHASE CHANGE MEMORIES WITH A BREAKDOWN LAYER SANDWICHED BY PHASE CHANGE MEMORY MATERIAL - A phase change memory cell may be formed with a pair of chalcogenide phase change layers that are separated by a breakdown layer. The breakdown layer may be broken down prior to use of the memory so that a conductive breakdown point is defined within the breakdown layer. In some cases, the breakdown point may be well isolated from the surrounding atmosphere, reducing heat losses and decreasing current consumption. In addition, in some cases, the breakdown point may be well isolated from overlying and underlying electrodes, reducing issues related to contamination. The breakdown point may be placed between a pair of chalcogenide layers with the electrodes outbound of the two chalcogenide layers. | 2010-07-01 |
20100163826 | METHOD FOR ACTIVE PINCH OFF OF AN OVONIC UNIFIED MEMORY ELEMENT - A method of manufacturing a phase change memory (PCM) includes forming a pinch plate layer transversely to a PCM layer that is insulated from the pinch plate layer by a dielectric layer. Biasing the pinch plate layer causes a depletion region to form in the PCM layer. During a read of the PCM in a reset or partial reset state the depletion region increases the resistance of the PCM layer significantly. | 2010-07-01 |
20100163827 | FORMING PHASE CHANGE MEMORY CELLS - Small phase change memory cells may be formed by forming a segmented heater over a substrate. A stop layer may be formed over the heater layer and segmented with the heater layer. Then, sidewall spacers may be formed over the segmented heater to define an aperture between the sidewall spacers that may act as a mask for etching the stop layer over the segmented heater. As a result of the etching using the sidewall spacers as a mask, sublithographic pore may be formed over the heater. Phase change material may be formed within the pore. | 2010-07-01 |
20100163828 | PHASE CHANGE MEMORY DEVICES AND METHODS FOR FABRICATING THE SAME - A phase change memory device is provided, including a semiconductor substrate with a first conductive semiconductor layer disposed thereover, wherein the first conductive semiconductor layer has a first conductivity type. A first dielectric layer is disposed over the semiconductor substrate. A second conductive semiconductor layer having a second conductivity type opposite to the first conductivity type is disposed in the first dielectric layer. A heating electrode is disposed in the first dielectric layer and formed over the second conductive semiconductor layer, wherein the heating electrode has a tapered cross section and includes metal silicide. A second dielectric layer is disposed over the first dielectric layer. A phase change material layer is disposed in the second dielectric layer. An electrode is disposed over the second dielectric layer, covering the phase change material layer. | 2010-07-01 |
20100163829 | CONDUCTIVE BRIDGING RANDOM ACCESS MEMORY DEVICE AND METHOD OF MANUFACTURING THE SAME - A conductive bridging random access memory (CBRAM) device and a method of manufacturing the same are provided. The CBRAM device includes a first electrode layer, a dielectric layer, a solid electrolyte layer, a second electrode layer and a metal layer. The solid electrolyte layer is located on the first electrode layer. The second electrode layer is located on the solid electrolyte layer. The metal layer is located near the solid electrolyte layer. The dielectric layer is located between the solid electrolyte layer and the metal layer. Since the metal layer is disposed near the solid electrolyte layer in the CBRAM device, it can generate a positive electric field during an erase operation, so as to accelerate a break of mutually connected metal filaments. | 2010-07-01 |
20100163830 | PHASE-CHANGE RANDOM ACCESS MEMORY CAPABLE OF REDUCING THERMAL BUDGET AND METHOD OF MANUFACTURING THE SAME - A phase-change random access memory (PRAM) is presented which can ensure the integrity of the electrical characteristics of driving transistors even when the PRAM is with a high temperature SEG fabrication process because the fabrication time is minimized. A method of manufacturing the PRAM includes the following steps. After preparing a semiconductor substrate having a cell area and a peripheral area, a junction area is formed in the cell area. Then, a transistor having a gate electrode with a single conductive layer is formed in the peripheral area. Subsequently, a first interlayer dielectric layer is formed at an upper portion of the semiconductor substrate, and then a contact hole is formed by etching the first interlayer dielectric layer to expose a predetermined portion of the junction area. Next, an epitaxial layer is grown in the contact hole. | 2010-07-01 |
20100163831 | DEPOSITED SEMICONDUCTOR STRUCTURE TO MINIMIZE N-TYPE DOPANT DIFFUSION AND METHOD OF MAKING - A microelectronic structure including a layerstack is provided, the layerstack including: (a) a first layer including semiconductor material that is very heavily n-doped before being annealed, having a first-layer before-anneal dopant concentration, the first layer being between about 50 and 200 angstroms thick, wherein the first layer is above a substrate, and wherein the first layer is heavily n-doped after being annealed, having a first-layer after-anneal dopant concentration, the first-layer before-anneal dopant concentration exceeding the first-layer after-anneal concentration; (b) a second layer including semiconductor material that is not heavily doped before being annealed, having a second-layer before-anneal dopant concentration, the second layer being about as thick as the first layer, wherein the second layer is above and in contact with the first layer, and wherein the second layer includes heavily n-doped semiconductor material after being annealed, having a second-layer after-anneal dopant concentration, the second-layer after-anneal dopant concentration exceeding the second-layer before-anneal concentration; and (c) a third layer including semiconductor material that is above and in contact with the second layer and that is not heavily n-doped before or after being annealed, the third layer having a third-layer dopant concentration. | 2010-07-01 |
20100163832 | SELF-ALIGNED NANO-CROSS-POINT PHASE CHANGE MEMORY - One embodiment is a phase change memory that includes a heater element transversely contacting a storage element of phase change material. In particular, an end of the storage element contacts an end of the heater element. A first pair of dielectric spacers is positioned on opposite sides of the first heater element and a second pair of dielectric spacers is positioned on opposite sides of the first storage element. The storage element, heater element, and first and second pairs of dielectric spacers can be made by a spacer patterning technique. | 2010-07-01 |
20100163833 | ELECTRICAL FUSE DEVICE BASED ON A PHASE-CHANGE MEMORY ELEMENT AND CORRESPONDING PROGRAMMING METHOD - A fuse device has a fuse element provided with a first terminal and a second terminal and an electrically breakable region, which is arranged between the first terminal and the second terminal and is configured to undergo breaking as a result of the supply of a programming electrical quantity, thus electrically separating the first terminal from the second terminal. The electrically breakable region is of a phase-change material, in particular a chalcogenic material, for example GST. | 2010-07-01 |
20100163834 | CONTACT STRUCTURE, METHOD OF MANUFACTURING THE SAME, PHASE CHANGEABLE MEMORY DEVICE HAVING THE SAME, AND METHOD OF MANUFACTURING PHASE CHANGEABLE MEMORY DEVICE - A contact structure, a method of manufacturing the same, a phase-changeable memory device having the same, and a method of manufacturing the phase-changeable memory device are described. The phase-changeable memory device includes: an upper electrode, a bit line, and a bit line contact unit. The upper electrode is on a semiconductor substrate having a phase-change pattern. The bit line is on the upper electrode. The bit line contact unit is interposed between the upper electrode and the bit line and electrically couples together the upper electrode to the bit line. The bit line contact unit includes a main conductive layer, a first and second barrier film. The first barrier film surrounds a bottom portion and a side portion of the main conductive layer. The second barrier film is on the main conductive layer. | 2010-07-01 |
20100163835 | CONTROLLING THE CIRCUITRY AND MEMORY ARRAY RELATIVE HEIGHT IN A PHASE CHANGE MEMORY FEOL PROCESS FLOW - A CMOS logic portion embedded with a PCM portion is recessed by a gate structure height as measured by a thickness of a gate oxide and a polysilicon gate to provide planarity of the CMOS logic portion with the PCM portion is described. | 2010-07-01 |
20100163836 | LOW-VOLUME PHASE-CHANGE MATERIAL MEMORY CELL - A memory device includes a memory array comprising a plurality of storage locations disposed above a plurality of generally parallel lines, where each storage location comprises a programmable material disposed on a sidewall of a conductive element. | 2010-07-01 |
20100163837 | GUNN DIODE - A Gunn diode includes an active layer having a top and a bottom, a first contact layer disposed adjacent to the top of the active layer, a second contact layer disposed adjacent to the bottom of the active layer, wherein the first and second contact layers are more heavily doped than the active layer, and at least one outer contact layer disposed at an outer region of at least one of the first and second contact layers, the at least one outer contact layer being more heavily doped than the first and second contact layers, wherein the first and second contact layers, the active layer, and the at least one outer contact layer include a base material that is the same. | 2010-07-01 |
20100163838 | METHOD OF ISOLATING NANOWIRES FROM A SUBSTRATE - A method is provided. The method includes forming a plurality of nanowires on a top surface of a substrate and forming an oxide layer adjacent to a bottom surface of each of the plurality of nanowires, wherein the oxide layer is to isolate each of the plurality of nanowires from the substrate. | 2010-07-01 |
20100163839 | SEMICONDUCTOR SUBSTRATE FOR GROWTH OF AN EPITAXIAL SEMICONDUCTOR DEVICE - A semiconductor substrate includes: a base layer; a sacrificial layer that is formed on a base layer and that includes a plurality of spaced apart sacrificial film regions and a plurality of first passages each of which is defined between two adjacent ones of the sacrificial film regions. Each sacrificial film region has a plurality of nanostructures and a plurality of second passages defined among the nanostructures. The second passages communicate spatially with the first passages and have a width less than that of the first passages. An epitaxial layer is disposed on the sacrificial layer. | 2010-07-01 |
20100163840 | Nitride nanowires and method of producing such - The present invention relates to the growing of nitride semiconductors, applicable for a multitude of semiconductor devices such as diodes, LEDs and transistors. According to the method of the invention nitride semiconductor nanowires are grown utilizing a CVD based selective area growth technique. A nitrogen source and a metal-organic source are present during the nanowire growth step and at least the nitrogen source flow rate is continuous during the nanowire growth step. The V/III-ratio utilized in the inventive method is significantly lower than the V/III-ratios commonly associated with the growth of nitride based semiconductor. | 2010-07-01 |
20100163841 | NANO-HETERO STRUCTURE AND METHOD OF FABRICATING THE SAME - A nano-hetero structure is provided. The nano-hetero structure includes at least one nano-semiconductor base and a plurality of metal nanoparticles attached on the surface of nano-semiconductor base. | 2010-07-01 |
20100163842 | Multiple-Gate Transistors with Reverse T-Shaped Fins - A method of forming an integrated circuit structure includes forming a first insulation region and a second insulation region in a semiconductor substrate and facing each other; and forming an epitaxial semiconductor region having a reversed T-shape. The epitaxial semiconductor region includes a horizontal plate including a bottom portion between and adjoining the first insulation region and the second insulation region, and a fin over and adjoining the horizontal plate. The bottom of the horizontal plate contacts the semiconductor substrate. The method further includes forming a gate dielectric on a top surface and at least top portions of sidewalls of the fin; and forming a gate electrode over the gate dielectric. | 2010-07-01 |
20100163843 | ROOM TEMPERATURE-OPERATING SINGLE-ELECTRON DEVICE AND THE FABRICATION METHOD THEREOF - The present invention relates to a room temperature-operating single-electron device and a fabrication method thereof, and more particularly, to a room temperature-operating single-electron device in which a plurality of metal silicide dots formed serially is used as multiple quantum dots, and a fabrication method thereof. | 2010-07-01 |
20100163844 | Fabrication method of electronic devices based on aligned high aspect ratio nanoparticle networks - A layer of high aspect ratio nanoparticles is disposed on a surface of a substrate under the influence of an electrical field applied on the substrate. To create the electrical field, a voltage is applied between a pair of electrodes arranged near the substrate or on the substrate, and the high aspect ratio nanoparticles disposed on the substrate are at least partially aligned along direction(s) of the applied electrical field. The high aspect ratio nanoparticles are grown from catalyst nanoparticles in an aerosol, and the aerosol is directly used for forming the nanoparticle layer on the substrate at room temperature. The nanoparticles may be carbon nanotubes, in particular single wall carbon nanotubes. The substrate with the layer of aligned high aspect ratio nanoparticles disposed thereon can be used for fabricating nanoelectronic devices. | 2010-07-01 |
20100163845 | Tunnel field effect transistor and method of manufacturing same - A TFET includes a source region ( | 2010-07-01 |
20100163846 | Nano-tube mosfet technology and devices - This invention discloses a semiconductor power device disposed in a semiconductor substrate and the semiconductor substrate has a plurality of trenches. Each of the trenches is filled with a plurality of epitaxial layers of alternating conductivity types constituting nano tubes functioning as conducting channels stacked as layers extending along a sidewall direction with a “Gap Filler” layer filling a merging-gap between the nano tubes disposed substantially at a center of each of the trenches. The “Gap Filler” layer can be very lightly doped Silicon or grown and deposited dielectric layer. In an exemplary embodiment, the plurality of trenches are separated by pillar columns each having a width approximately half to one-third of a width of the trenches. | 2010-07-01 |
20100163847 | QUANTUM WELL MOSFET CHANNELS HAVING UNI-AXIAL STRAIN CAUSED BY METAL SOURCE/DRAINS, AND CONFORMAL REGROWTH SOURCE/DRAINS - Embodiments described include straining transistor quantum well (QW) channel regions with metal source/drains, and conformal regrowth source/drains to impart a uni-axial strain in a MOS channel region. Removed portions of a channel layer may be filled with a junction material having a lattice spacing different than that of the channel material to causes a uni-axial strain in the channel, in addition to a bi-axial strain caused in the channel layer by a top barrier layer and a bottom buffer layer of the quantum well. | 2010-07-01 |
20100163848 | BUFFER STRUCTURE FOR SEMICONDUCTOR DEVICE AND METHODS OF FABRICATION - Embodiments of the present invention describe a semiconductor device having an buffer structure and methods of fabricating the buffer structure. The buffer structure is formed between a substrate and a quantum well layer to prevent defects in the substrate and quantum well layer due to lattice mismatch. The buffer structure comprises a first buffer layer formed on the substrate, a plurality of blocking members formed on the first buffer layer, and second buffer formed on the plurality of blocking members. The plurality of blocking members prevent the second buffer layer from being deposited directly onto the entire first buffer layer so as to minimize lattice mismatch and prevent defects in the first and second buffer layers. | 2010-07-01 |
20100163849 | DOUBLE PASS FORMATION OF A DEEP QUANTUM WELL IN ENHANCEMENT MODE III-V DEVICES - A quantum well is formed for a deep well III-V semiconductor device using double pass patterning. In one example, the well is formed by forming a first photolithography pattern over terminals on a material stack, etching a well between the terminals using the first photolithography patterning, removing the first photolithography pattern, forming a second photolithography pattern over the terminals and at least a portion of the well, deepening the well between the terminals by etching using the second photolithography pattern, removing the second photolithography pattern, and finishing the terminals and the well to form a device on the material stack. | 2010-07-01 |
20100163850 | THIN FILM TRANSISTOR AND METHOD OF FABRICATING THE SAME - A thin film transistor includes: a silicon nanowire on a substrate, the silicon nanowire having a central portion and both side portions of the central portion; a gate electrode on the central portion; and a source electrode and a drain electrode spaced apart from the source electrode on the both side portions, the source electrode and the drain electrode electrically connected to the silicon nanowire, respectively. | 2010-07-01 |
20100163851 | ORGANIC BASED DEVICE AND METHOD FOR MANUFACTURE THEREOF - A device comprising a first transparent and electrically conductive layer ( | 2010-07-01 |
20100163852 | Material for light-emitting device and light-emitting device - The present invention provides a light emitting device material which enables a light emitting device having high efficiency and excellent chromatic purity and durability using a light emitting device material containing a pyrene compound represented by formula (1), wherein any one of R | 2010-07-01 |
20100163853 | ORGANIC ELECTROLUMINESCENT DEVICE - An organic electroluminescent device including an emitting layer, an electron-injecting controlling layer and an electron-transporting layer between an anode and a cathode in sequential order from the anode, bonding one to another, the emitting layer including a host material and a dopant, the ionization potential (Ips) of the main material forming the electron-injecting controlling layer and the ionization potential (Iph) of the host material of the emitting layer satisfying the following relationship (i), the electron mobility of the electron-transporting material forming the electron-transporting layer being 10 | 2010-07-01 |
20100163854 | ORGANIC LIGHT EMITTING DEVICE - An organic light emitting device (OLED) including: a substrate; a first electrode; a second electrode facing the first electrode; a first blue light emitting layer, a green light emitting layer, a red light emitting layer, and a second blue light emitting layer all interposed between the first electrode and the second electrode; and a color filter disposed in a path of light emitted from the light emitting layers, wherein the first blue light emitting layer includes a deep blue dopant, and the second blue light emitting layer includes a sky blue dopant. | 2010-07-01 |
20100163855 | METHOD OF FABRICATING POLYSILICON, THIN FILM TRANSISTOR, METHOD OF FABRICATING THE THIN FILM TRANSISTOR, AND ORGANIC LIGHT EMITTING DIODE DISPLAY DEVICE INCLUDING THE THIN FILM TRANSISTOR - A thin film transistor, a method of fabricating the thin film transistor, and an organic light emitting diode (OLED) display device equipped with the thin film transistor of which the thin film transistor includes a substrate, a buffer layer disposed on the substrate, a first semiconductor layer and a second semiconductor layer disposed on the buffer layer, a gate electrode insulated from the first semiconductor layer and the second semiconductor layer, a gate insulating layer insulating the gate electrode from the first semiconductor layer and the second semiconductor layer, and source and drain electrodes insulated from the gate electrode and partially connected to the second semiconductor layer, wherein the second semiconductor layer is disposed on the first semiconductor layer. | 2010-07-01 |
20100163856 | METHOD OF FABRICATING POLYSILICON, THIN FILM TRANSISTOR, METHOD OF FABRICATING THE THIN FILM TRANSISTOR, AND ORGANIC LIGHT EMITTING DIODE DISPLAY DEVICE INCLUDING THE THIN FILM TRANSISTOR - A thin film transistor, a method of fabricating the thin film transistor, and an organic light emitting diode (OLED) display device including the thin film transistor, the thin film transistor including: a substrate; a buffer layer formed on the substrate; a first semiconductor layer disposed on the buffer layer; a second semiconductor layer disposed on the first semiconductor layer, which is larger than the first semiconductor layer; a gate electrode insulated from the first semiconductor layer and the second semiconductor layer; a gate insulating layer to insulate the gate electrode from the first semiconductor layer and the second semiconductor layer; source and drain electrodes insulated from the gate electrode and connected to the second semiconductor layer; an insulating layer disposed on the source and drain electrodes, and an organic light emitting diode connected to one of the source and drain electrodes. | 2010-07-01 |
20100163857 | Material for organic photoelectric device, and organic photoelectric device including the same - A material for an organic photoelectric device includes a compound represented by the following Formula 1: | 2010-07-01 |
20100163858 | SWITCHING ELEMENT AND METHOD FOR MANUFACTURING THE SAME - A problem of a switching element using for the active layer a carbon nanotube (CNT) dispersion film that can be manufactured at low temperature has been that sufficient electrical contact and thermal conductivity between the CNTs and the source and drain electrode surfaces are not obtained. The switching element of the present invention has a structure in which a mixed layer of carbon nanotubes and a metal material, and a metal layer of the metal material are laminated in this order on source and drain electrodes, and thereby, the CNT-dispersed film and the electrode surfaces can be in firm electrical, mechanical, and thermal contact with each other. Thus, a switching element exhibiting good and stable transistor characteristics is obtained with a low-temperature, convenient, and low-cost process. | 2010-07-01 |
20100163859 | LIGHT EMITTING DEVICE AND ELECTRONIC APPARATUS - A light emitting device which is capable of suppressing deterioration by diffusion of impurities such as moisture, oxygen, alkaline metal and alkaline earth metal, and concretely, a flexible light emitting device which has light emitting element formed on a plastic substrate. On the plastic substrate, disposed are two layers and more of barrier films comprising a layer represented by AlNxOy which is capable of blocking intrusion of moisture and oxygen in a light emitting layer and blocking intrusion of impurities such as an alkaline metal and an alkaline earth metal in an active layer of TFT, and further, a stress relaxation film containing resin is disposed between two layers of barrier films. | 2010-07-01 |