26th week of 2021 patent applcation highlights part 66 |
Patent application number | Title | Published |
20210202336 | PACKAGE STRUCTURE AND METHOD FOR MANUFACTURING THE SAME - A package structure includes a wiring structure, at least one electronic device, a reinforcement structure, a plurality of conductive vias and an encapsulant. The wiring structure includes at least one dielectric layer and at least one circuit layer in contact with the dielectric layer. The electronic device is electrically connected to the wiring structure. The reinforcement structure is disposed on a surface of the wiring structure, and includes a thermoset material. The conductive vias is disposed in the reinforcement structure. The encapsulant covers the electronic device. | 2021-07-01 |
20210202337 | SEMICONDUCTOR DEVICE - A semiconductor device having a semiconductor die, a redistribution layer (RDL), and an encapsulant. The RDL layer can be formed on a first surface of the semiconductor die. The encapsulant can enclose a second surface and side surfaces of the semiconductor die. The encapsulant can enclose side portions of the RDL. | 2021-07-01 |
20210202338 | WAFER-LEVEL SIP MODULE STRUCTURE AND METHOD FOR PREPARING THE SAME - The present disclosure provides a wafer-level SiP module and a method for preparing the same. The method includes: forming conductive pillars on a substrate; attaching a chip to the substrate; forming a first plastic encapsulation layer on the substrate, the first plastic encapsulation layer encapsulating the conductive pillars and the chip; forming a rewiring layer on a top surface of the first plastic encapsulation layer, wherein the rewiring layer is electrically connected to the conductive pillars and the chip; attaching a connector to a top surface of the rewiring layer, wherein the connector is electrically connected to the rewiring layer; forming a second plastic encapsulation layer on the top surface of the rewiring layer, wherein the second plastic encapsulation layer encapsulates the connector; removing the substrate; and fabricating a solder bump under the first plastic encapsulation layer, wherein the solder bump is electrically connected to the conductive pillars. | 2021-07-01 |
20210202339 | RELIABLE SEMICONDUCTOR PACKAGES - The present disclosure is directed to improving package adhesion to provide more reliable semiconductor packages. The semiconductor package may be, for example, a leadframe including one or multiple dies attached thereto. The semiconductor package may include only clip bonds or only wire bonds or a combination of clip bonds and wire bonds. An adhesion enhancement coating may be disposed in between the package substrate and the encapsulant to improve package adhesion. For example, the adhesion enhancement coating enhances the sealing by bonding respectively with the inorganic materials of the package substrate and the organic materials of the encapsulant. | 2021-07-01 |
20210202340 | SEMICONDUCTOR DEVICE PACKAGE STRUCTURE AND METHOD FOR FABRICATING THE SAME - A semiconductor device package structure includes a substrate. The substrate has a circuit structure formed in a die region. The die region is defined by a plurality of scribe lines configured on the substrate. A seal ring is disposed in the substrate and located at a periphery region of the die region, and surrounds at least a portion of the circuit structure. A trench ring is disposed in the substrate between the seal ring and the scribe lines. A packaging passivation cap layer covers over the circuit structure and the seal ring, and covers at least the trench ring. | 2021-07-01 |
20210202341 | WIDE BANDGAP SEMICONDUCTOR DEVICE WITH SENSOR ELEMENT - Shielding techniques are used to provide an embedded sensor element such as a temperature sensing element on a wide bandgap power semiconductor device. A semiconductor device may include a drift layer and an embedded sensor element. The drift layer may be a wide bandgap semiconductor material. A shielding structure is provided in the drift layer below the embedded sensor element. The embedded sensor element may be provided between contacts that are in electrical contact with the shielding well. The distance between the contacts may be minimized. A noise reduction well may be provided between the contacts to further isolate the embedded sensor element from parasitic signals. | 2021-07-01 |
20210202342 | SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE MANUFACTURING METHOD - A semiconductor device includes a semiconductor element, a base plate, and a plurality of contact materials. The base plate has a front surface holding the semiconductor element and a rear surface to which a cooling body to cool the semiconductor element is attachable. The plurality of contact materials are discretely arranged on the rear surface of the base plate. The plurality of contact materials are materials for bridging a gap on a heat dissipation path between the base plate and the cooling body. The plurality of contact materials each have a volume based on a bowed shape of the rear surface of the base plate. From among the plurality of contact materials, a contact material at a concave of the bowed shape has a greater volume than a contact material at a convex of the bowed shape. | 2021-07-01 |
20210202343 | METHODS FOR ESTABLISHING THERMAL JOINTS BETWEEN HEAT SPREADERS OR LIDS AND HEAT SOURCES - According to various aspects, exemplary embodiments are disclosed of thermal interface materials, electronic devices, and methods for establishing thermal joints between heat spreaders or lids and heat sources. In exemplary embodiments, a method of establishing a thermal joint for conducting heat between a heat spreader and a heat source of an electronic device generally includes positioning a thermal interface material (TIM1) between the heat spreader and the heat source. | 2021-07-01 |
20210202344 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF - A semiconductor device includes an insulating thermal substrate, a metal wiring layer and a heat-dissipation component. The metal wiring layer includes a plurality of engaging structures. The plurality of engaging structures is disposed between the insulating thermal substrate and the heat-dissipation component, and the heat-dissipation component applies solder structures to connect the metal wiring layer by having the solder structures to wrap partly the plurality of engaging structures. In addition, a method for fabricating the same semiconductor device is also provided. | 2021-07-01 |
20210202345 | PACKAGES WITH SEPARATE COMMUNICATION AND HEAT DISSIPATION PATHS - In some examples, a package comprises a platform and at least one pedestal positioned along at least a portion of a perimeter of the platform. The platform and the at least one pedestal form a cavity. The package also comprises a die positioned in the cavity and on the platform, with the die having an active circuit facing away from the platform. The package also comprises a conductive layer coupled to the die and to a conductive terminal. The conductive terminal is positioned above the at least one pedestal, and the die and the conductive terminal are positioned in different horizontal planes. | 2021-07-01 |
20210202346 | PACKAGING STRUCTURE AND PACKAGING METHOD OF DIGITAL CIRCUIT - A packaging structure includes: a substrate provided with a through-cavity penetrating up and down, and a metal heat sink on a front surface of the substrate; a bonding chip mounting area and a first passive element mounting area on the front surface, and a flip chip mounting area, a second passive element mounting area and a pin lead mounting area are provided on a back surface of the substrate; a first sealing ring located at the periphery of the bonding chip mounting area and the first passive element mounting area; a first cover plate packaged on the first sealing ring; a second sealing ring located at the periphery of the flip chip mounting area and the second passive element mounting area with the pin lead mounting area being located at the periphery of the second sealing ring; and a second cover plate packaged on the second sealing ring. | 2021-07-01 |
20210202347 | HEAT SPREADING LAYER INTEGRATED WITHIN A COMPOSITE IC DIE STRUCTURE AND METHODS OF FORMING THE SAME - A heat spreading material is integrated into a composite die structure including a first IC die having a first dielectric material and a first electrical interconnect structure, and a second IC die having a second dielectric material and a second electrical interconnect structure. The composite die structure may include a composite electrical interconnect structure comprising the first interconnect structure in direct contact with the second interconnect structure at a bond interface. The heat spreading material may be within at least a portion of a dielectric area through which the bond interface extends. The heat spreading material may be located within one or more dielectric materials surrounding the composite interconnect structure, and direct a flow of heat generated by one or more of the first and second IC dies. | 2021-07-01 |
20210202348 | IC ASSEMBLIES INCLUDING DIE PERIMETER FRAMES SUITABLE FOR CONTAINING THERMAL INTERFACE MATERIALS - An integrated circuit (IC) assembly comprising an IC die and a frame material that has been dispensed over the assembly substrate to be further adjacent to a perimeter edge of the IC die. The frame material may be selected to have flow properties that minimize slump, for example so a profile of a transverse cross-section through the frame material may retain convex curvature. The frame material may be cured following dispense, and upon application of a thermal interface material (TIM), the frame material may and act as a barrier, impeding flow of the TIM. The frame material may be compressed by force applied through an external thermal solution, such as a heat sink, to ensure good contact to the TIM. | 2021-07-01 |
20210202349 | SEMICONDUCTOR DEVICE PACKAGE AND METHOD FOR MANUFACTURING THE SAME - A semiconductor device package includes a semiconductor die and an anisotropic thermal conductive structure. The semiconductor die includes a first surface, a second surface opposite to the first surface and edges connecting the first surface to the second surface. The anisotropic thermal conductive structure has different thermal conductivities in different directions. The anisotropic thermal conductive structure includes at least two pairs of film stacks, and each pair of the film stacks comprises a metal film and a nano-structural film alternately stacked. The anisotropic thermal conductive structure comprises a first thermal conductive section disposed on the first surface of the semiconductor die, and the first thermal conductive section is wider than the semiconductor die. | 2021-07-01 |
20210202350 | METHOD FOR PRODUCING A HEAT-SPREADING PLATE, HEAT-SPREADING PLATE, METHOD FOR PRODUCING A SEMICONDUCTOR MODULE AND SEMICONDUCTOR MODULE - One aspect relates to a method for producing a heat-spreading plate for a circuit carrier. At least one first layer made of a first material having a first coefficient of expansion and at least one second layer made of a second, low-stretch material having a second coefficient of expansion that is smaller than the first coefficient of expansion are bonded to each other at a bonding temperature of 150° C.-300° C. by means of a low-temperature sintering process. At least one bonding layer from a bonding material is formed between the first layer and the second layer and the bonding temperature essentially corresponding to the mounting temperature at which the produced heat spreading plate is connected to at least one circuit carrier. | 2021-07-01 |
20210202351 | THERMAL MANAGEMENT USING VARIATION OF THERMAL RESISTANCE OF THERMAL INTERFACE - A thermal management system includes an integrated circuit having an active side including a control circuit and a backside including a first set of electrodes distributed across the backside. The thermal management system includes a heat exchanger having a surface including a second set of electrodes. The thermal management system includes a thermal interface material including thermally conductive particles suspended in a fluid. The thermal interface material is disposed between the backside of the integrated circuit and the surface of the heat exchanger. The control circuit is configured to apply an electric field to the thermal interface material using a first electrode of the first set of electrodes and a second electrode of the second set of electrodes to excite at least some of the thermally conductive particles between the first electrode and the second electrode. | 2021-07-01 |
20210202352 | SEMICONDUCTOR PACKAGE FOR DISCHARGING HEAT GENERATED BY SEMICONDUCTOR CHIP - Disclosed is a semiconductor package comprising a package substrate, a first semiconductor chip on the package substrate and including a first region and a second region, a second semiconductor chip on the first region, a heat radiation spacer on the second region, a third semiconductor chip supported by the second semiconductor chip and the heat radiation spacer, and a molding layer covering the first to third semiconductor chips and the heat radiation spacer. | 2021-07-01 |
20210202353 | SEMICONDUCTOR DEVICE PACKAGE AND METHOD OF MANUFACTURING THE SAME - A semiconductor device package includes a substrate, a first circuit layer and a second circuit layer. The first circuit layer is disposed on the substrate. The first circuit layer has a plurality of dielectric layers and a first through via penetrating the dielectric layers and electrically connected to the substrate. The second circuit layer is disposed on the first circuit layer. The second circuit layer has a plurality of dielectric layers and a second through via penetrating the dielectric layers and electrically connected to the first circuit layer. | 2021-07-01 |
20210202354 | MEMORY DEVICE AND MANUFACTURING METHOD THEREOF - A memory device including a base chip and a memory cube mounted on and connected with the base chip is described. The memory cube includes multiple stacked tiers, and each tier of the multiple stacked tiers includes semiconductor chips laterally wrapped by an encapsulant and a redistribution structure. The semiconductor chips of the multiple stacked tiers are electrically connected with the base chip through the redistribution structures in the multiple stacked tiers. The memory cube includes a thermal path structure extending through the multiple stacked tiers and connected to the base chip. The thermal path structure has a thermal conductivity larger than that of the encapsulant. The thermal path structure is electrically isolated from the semiconductor chips in the multiple stacked tiers and the base chip. | 2021-07-01 |
20210202355 | Component Carrier With Low Shrinkage Dielectric Material - A component carrier includes a stack having at least one electrically conductive layer structure and/or at least one electrically insulating layer structure. At least part of the at least one electrically insulating layer structure comprises or consists of a material having a curing shrinkage value of less than 2%. | 2021-07-01 |
20210202356 | LEADFRAME ASSEMBLY - A method includes forming a leadframe assembly to have a pair of opposing sides, and having semiconductor die receiving portions extending between the opposing sides. The method also includes placing semiconductor dies on the leadframe assembly in the die receiving portions. Each die has a row of leads on each of two opposing sides of the die and a longitudinal axis parallel to the rows of leads. The longitudinal axis of each die is orthogonal to the opposing sides of the leadframe assembly. The method further includes applying mold compound to the semiconductor dies. The method includes punching through the leadframe assembly between the opposing sides using a first tool having a first tool longitudinal axis parallel to longitudinal axes of the dies. | 2021-07-01 |
20210202357 | SEMICONDUCTOR PACKAGE WITH ISOLATED HEAT SPREADER - A semiconductor package includes a metallic pad and leads, a semiconductor die attached to the metallic pad, the semiconductor die including an active side with bond pads opposite the metallic pad, a wire bond extending from a respective bond pad of the semiconductor die to a respective lead of the leads, a heat spreader over the active side of the semiconductor die with a gap separating the active side of the semiconductor die from the heat spreader, an electrically insulating material within the gap and in contact with the active side of the semiconductor die and the heat spreader; and mold compound covering the semiconductor die and the wire bond, and partially covering the metallic pad and the heat spreader, with the metallic pad exposed on a first outer surface of the semiconductor package and with the heat spreader exposed on a second outer surface of the semiconductor package. | 2021-07-01 |
20210202358 | Fan-Out Packages and Methods of Forming the Same - A device may include a first package and a second package where the first package has a warped shape. First connectors attached to a redistribution structure of the first package include a spacer embedded therein. Second connectors attached to the redistribution structure are fee from the spacer, the spacer of the first connectors keeping a minimum distance between the first package and the second package during attaching the first package to the second package. | 2021-07-01 |
20210202359 | SEMICONDUCTOR DEVICE PACKAGE - A semiconductor device package includes a substrate, a first insulation layer and an electrical contact. The first insulation layer is disposed on the first surface of the substrate. The electrical contact is disposed on the substrate and has a first portion surrounded by the first insulation layer and a second portion exposed from the first insulation layer, and a neck portion between the first portion and the second portion of the electrical contact. Further, the second portion tapers from the neck portion. | 2021-07-01 |
20210202360 | SEMICONDUCTOR PACKAGE DEVICE WITH INTEGRATED INDUCTOR AND MANUFACTURING METHOD THEREOF - A semiconductor device includes a semiconductor substrate, an interconnect structure, and a permalloy device. The interconnect structure is disposed over the semiconductor substrate. The interconnect structure includes a conductive coil. The conductive coil includes horizontally-extending metal lines, and vertically-extending vias electrically connecting the metal lines. The permalloy device is disposed in the interconnector structure and wound around by the conductive coil and insulated by the conductive coil, wherein the permalloy device and the conductive coil in combination define an inductor, and the permalloy device serves as a magnetic core of the inductor. | 2021-07-01 |
20210202361 | WIRING BOARD AND METHOD OF MANUFACTURING THE SAME - A wiring board includes a first wiring layer formed on one surface of a core layer, a first insulating layer formed on the one surface of the core layer so as to cover the first wiring layer, a via wiring embedded in the first insulating layer, a second wiring layer formed on a first surface of the first insulating layer, and a second insulating layer thinner than the first insulating layer formed on the first surface of the first insulating layer so as to cover the second wiring layer. The first wiring layer comprises a pad and a plane layer provided around the pad. One end surface of the via wiring is exposed from the first surface of the first insulating layer and directly bonded to the second wiring layer. The other end surface of the via wiring is directly bonded to the pad in the first insulating layer. | 2021-07-01 |
20210202362 | SEMICONDUCTOR PACKAGE AND METHOD OF MANUFACTURING THE SAME - A semiconductor package includes a core layer, a conductive interconnect and a semiconductor chip. The core layer has a top surface and a bottom surface opposite to the top surface. The conductive interconnect penetrates through the core layer. The conductive interconnect has a top surface and a bottom surface respectively exposed from the top surface and the bottom surface of the core layer. The semiconductor chip is disposed on the top surface of the core layer. The semiconductor chip includes a conductive pad, and the top surface of the conductive interconnect directly contacts the conductive pad. | 2021-07-01 |
20210202363 | PACKAGE STRUCTURE AND MANUFACTURING METHOD THEREOF - The disclosure provides a package structure including a redistribution circuit structure, a first circuit board, a second circuit board, a first insulator, multiple conductive terminals, and a package. The redistribution circuit structure has a first connection surface and a second connection surface opposite to each other. The first circuit board and the second circuit board are disposed on the first connection surface and are connected electrically to the redistribution circuit structure. The first insulator is disposed on the first connection surface and covers the first circuit board and the second circuit board. The conductive terminals are connected electrically to and disposed on the first circuit board or the second circuit board. The package is disposed on the second connection surface and is connected electrically to the redistribution circuit structure. A manufacturing method of a package structure is also provided. | 2021-07-01 |
20210202364 | PACKAGE STRUCTURE AND MANUFACTURING METHOD THEREOF - A package structure including a first circuit board, a second circuit board, an encapsulant, a plurality of conductive terminals, and a package device is provided. The first circuit board has a first top surface and a first bottom surface opposite to each other. The second circuit board has a second top surface and a second bottom surface opposite to each other. The encapsulant encapsulates the first and second circuit boards. The conductive terminals are disposed on the first or second bottom surface and electrically connected to the first or second circuit board. The package device is disposed on the first or second top surface and electrically connected to the first and second circuit boards. The package device includes a first chip, a second chip, a chip encapsulant, a circuit layer, and a plurality of conductive package terminals. A manufacturing method of a package structure is also provided. | 2021-07-01 |
20210202365 | PACKAGE WITH SHIFTED LEAD NECK - A semiconductor package includes a pad and leads having a planar profile shaped from a planar base metal, a semiconductor die attached to the pad, a wire bond extending from the semiconductor die to a respective lead, and mold compound covering the semiconductor die, the wire bond, and a first portion of the respective lead, wherein a second portion of the respective lead extends beyond the mold compound. A shape of the respective lead within the planar profile includes a notch indented relative to a first elongated side of the shape of the respective lead and a protrusion protruding outwardly relative to a second elongated side of the shape of the respective lead. The notch and the protrusion are each partially covered by the mold compound and partially outside the mold compound. | 2021-07-01 |
20210202366 | SEMICONDUCTOR ASSEMBLY - A semiconductor assembly includes a semiconductor component having a redistribution substrate with a top side, an underside and a semiconductor chip on the top side. Contact connection pads for connection to contact pads of the chip are on the top side of the substrate. External contact pads on the underside are electrically connected to the contact connection pads by conductor tracks. The external contact pads are at a greater distance from one another in a first region than a second region of the underside. The semiconductor component is on a printed circuit board. Contact pads corresponding to the external contacts are on a top side of the printed circuit board and are at a greater distance from one another in a first region than a second region of the top side. Through holes are formed between the contact pads in the first region of the printed circuit board. | 2021-07-01 |
20210202367 | PACKAGE STRUCTURE - A package structure is provided. The package structure includes a substrate. The package structure also includes a hybrid pad disposed on the substrate. The hybrid pad includes a metal layer and a buffer layer connected to the metal layer. The Young's modulus of the buffer layer is less than the Young's modulus of the metal layer. The package structure further includes an electrically connecting structure disposed on the hybrid pad. The package structure includes a chip layer electrically connected to the electrically connecting structure. The package structure also includes a bonding pad disposed between the electrically connecting structure and the chip layer. | 2021-07-01 |
20210202368 | SEMICONDUCTOR PACKAGE STRUCTURE AND MANUFACTURING METHOD THEREOF - A semiconductor package structure, including a circuit substrate, at least two chips, an encapsulant, and a redistribution layer, is provided. The circuit substrate has a first surface and a second surface opposite to the first surface. The at least two chips are disposed on the first surface. Each of the at least two chips has an active surface facing the circuit substrate and includes multiple first conductive connectors and multiple second conductive connectors disposed on the active surface. A pitch of the first conductive connectors is less than a pitch of the second conductive connectors. The encapsulant encapsulates the at least two chips. The redistribution layer is located on the second surface. The first conductive connectors are electrically connected to the redistribution layer by the circuit substrate. The second conductive connectors are electrically connected to the circuit substrate. A manufacturing method of a semiconductor package structure is also provided. | 2021-07-01 |
20210202369 | ELECTRONIC MODULE - An electronic module has a first substrate | 2021-07-01 |
20210202370 | Interconnect Device and Method - In some embodiments of the method, patterning the opening includes: projecting a radiation beam toward the second dielectric layer, the radiation beam having a pattern of the opening. In some embodiments of the method, the single-patterning photolithography process is an extreme ultraviolet (EUV) lithography process. In some embodiments of the method, filling the opening with the conductive material includes: plating the conductive material in the opening; and planarizing the conductive material and the second dielectric layer to form the first metal line from remaining portions of the conductive material, top surfaces of the first metal line and the second dielectric layer being planar after the planarizing. | 2021-07-01 |
20210202371 | SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME - A semiconductor device comprises a substrate including a cell array region and a peripheral circuit region that surrounds the cell array region. The cell array region includes landing pads disposed on the substrate and first bottom electrodes disposed on and connected to corresponding landing pads. The peripheral circuit region includes conductive lines disposed on the substrate, a first conductive pad disposed on and spaced apart from the conductive lines, a dielectric pattern disposed between the conductive lines and the first conductive pad, and a plurality of second bottom electrodes disposed on and connected in common to the first conductive pad. A height of each of the first bottom electrodes is greater than a height of each of the second bottom electrodes. Top surfaces of the first bottom electrodes are located at a same level as a level of top surfaces of the second bottom electrodes. | 2021-07-01 |
20210202372 | SEMICONDUCTOR DEVICE - A capacitor includes a case including a capacitor element, a first connection terminal, a second connection terminal, and a second insulating sheet formed between the first connection terminal and the second connection terminal, and the first connection terminal, the second insulating sheet, and the second connection terminal extend to the outside from the case. A semiconductor module includes a multi-layer terminal portion in which a first power terminal, a first insulating sheet, and a second power terminal are sequentially stacked. The first power terminal includes a first bonding area electrically connected to the first connection terminal, and the second power terminal includes a second bonding area electrically connected to the second connection terminal. The first insulating sheet includes a terrace portion that extends in a direction from the second bonding area towards the first bonding area in a planar view. | 2021-07-01 |
20210202373 | INTEGRATED CIRCUITS INCLUDING MULTI-LAYER CONDUCTING LINES - An integrated circuit includes a plurality of layers stacked in a first direction, a plurality of unit circuits at least partially overlapping each other in a second direction that is perpendicular to the first direction and configured to operate in parallel with one another, control circuitry configured to generate a control signal to control the plurality of unit circuits, and a multi-layer conducting line configured to transfer the control signal from the control circuitry to the plurality of unit circuits. The multi-layer conducting line may be integrally formed in a wiring layer and a via layer and extends in the second direction. The wiring layer and the via layer may be adjacent to each other. | 2021-07-01 |
20210202374 | MICROELECTRONIC DEVICES HAVING AIR GAP STRUCTURES INTEGRATED WITH INTERCONNECT FOR REDUCED PARASITIC CAPACITANCES - Embodiments of the invention include a microelectronic device that includes a substrate, at least one dielectric layer on the substrate and a plurality of conductive lines within the at least one dielectric layer. The microelectronic device also includes an air gap structure that is located below two or more of the plurality of conductive lines. | 2021-07-01 |
20210202375 | Top Hat Structure for Isolation Capacitors - An isolation capacitor structure reduces the likelihood of breakdown in the passivation layers by physically re-shaping or dividing the top plate of the isolation capacitor into two segments. In that way, the electric field is driven down and away from the passivation surfaces. One embodiment utilizes a series capacitor formed by the top metal plate of the capacitor and an additional “top hat” plate above the top metal plate that redirects the fields into the main isolation capacitor. Vias may be included between the top hat plate and the top metal plate. Another approach reshapes the top plate to have an integrated top hat structure and achieves similar results of directing charge down and away from the passivation layer surface breakdown paths. | 2021-07-01 |
20210202376 | MIM CAPACITOR OF EMBEDDED STRUCTURE AND METHOD FOR MAKING THE SAME - The present application has disclosed an MIM capacitor of an embedded structure, wherein an interlayer film is formed between a first metal wire layer and a second metal wire layer; the MIM capacitor is formed on the surface of the interlayer film; a capacitor lower electrode is connected to the first metal wire layer by means of a bottom first via, the first metal wire layer is connected, by means of a second via outside the capacitor lower electrode, to a lower electrode lead-out structure formed by the second metal wire layer; and an upper electrode lead-out structure formed by the second metal wire layer covers the surface of the capacitor upper electrode of the MIM capacitor. The present application has further disclosed a method for manufacturing an MIM capacitor of an embedded structure. In the present application, the performance and stability of the capacitor can be improved. | 2021-07-01 |
20210202377 | SKIP LEVEL VIAS IN METALLIZATION LAYERS FOR INTEGRATED CIRCUIT DEVICES - An integrated circuit device may be formed including an electronic substrate and a metallization structure on the electronic substrate, wherein the metallization structure includes a first level comprising a first dielectric material layer, a second level on the first level, wherein the second level comprises a second dielectric material layer, a third level on the second level, wherein the third level comprises a third dielectric material layer, at least one power/ground structure in the second level, and at least one skip level via extending at least partially through the first dielectric material layer of the first level, through the second dielectric layer of the second level, and at least partially through the third dielectric material layer of the third level, wherein the at least one skip level via comprises a continuous conductive material. | 2021-07-01 |
20210202378 | TOP GATE RECESSED CHANNEL CMOS THIN FILM TRANSISTOR IN THE BACK END OF LINE AND METHODS OF FABRICATION - A device includes a device level having a metallization structure coupled to a semiconductor device and a transistor above the device level. The transistor has a body including a single crystal group III-V or group IV semiconductor material, a source structure on a first portion of the body and a drain structure on a second portion of the body, where the source structure is separate from the drain structure. The transistor further includes a gate structure including a first gate structure portion in a recess in the body and a second gate structure portion between the source structure and the drain structure. A source contact is coupled with the source structure and a drain contact is coupled with the drain structure. The source contact is in contact with the metallization structure in the device level. | 2021-07-01 |
20210202379 | INTEGRATED CIRCUIT WITH NON-FUNCTIONAL STRUCTURES - An integrated circuit includes functional structures and non-functional structures. The functional structures include one or more functional metal structures. The non-functional structures include one or more non-functional metal structures. At least one of the one or more non-functional metal structures is connected to at least one of the one or more functional metal structures. For example, the at least one non-functional metal structure is connected to the at least one functional metal structure through a via. Alternatively, the at least one non-functional metal structure is connected to the at least one functional metal structure by physically contacting the at least one functional metal structure without using a via. | 2021-07-01 |
20210202380 | STRIPPED REDISTRUBUTION-LAYER FABRICATION FOR PACKAGE-TOP EMBEDDED MULTI-DIE INTERCONNECT BRIDGE - An embedded multi-die interconnect bridge (EMIB) is fabricated on a substrate using photolithographic techniques, and the EMIB is separated from the substrate and placed on the penultimate layer of an integrated-circuit package substrate, below the top solder-resist layer. A low Z-height of the EMIB, allows for useful trace and via real estate below the EMIB, to be employed in the package substrate. | 2021-07-01 |
20210202381 | SEMICONDUCTOR DEVICE INCLUDING A FUSE LATCH - A fuse latch of a semiconductor device is disclosed. The fuse latch of the semiconductor device includes a plurality of PMOS transistors and a plurality of NMOS transistors. The fuse latch includes PMOS transistors and NMOS transistors configured to latch fuse cell data. In the fuse latch, the plurality of PMOS transistors and the plurality of NMOS transistors are arranged in a shape of two lines in each active region in a second direction. | 2021-07-01 |
20210202382 | Bonding Pads Embedded in a Dielectric Diffusion Barrier and having Recessed Metallic Liners - A semiconductor die includes at least one first semiconductor device located on a first substrate, a first pad-level dielectric layer which is a diffusion barrier overlying the at least one first semiconductor device, and first bonding structures including a respective first metallic bonding pad embedded in the first pad-level dielectric layer. Each of the first bonding structures includes a metallic fill material portion having a horizontal distal surface that is located within a horizontal plane including a horizontal distal surface of the first pad-level dielectric layer, and a metallic liner laterally surrounding the metallic fill material portion and vertically spaced from the horizontal plane by a vertical recess distance. | 2021-07-01 |
20210202383 | SEMICONDUCTOR DEVICE WITH METAL INTERCONNECTION - A semiconductor device includes: a substrate; a test transistor over the substrate; and multi-level metal interconnections formed over the substrate spaced apart from the test transistor, wherein at least one metal interconnection among the multi-level metal interconnections is a spiral metal interconnection. | 2021-07-01 |
20210202384 | DUAL POWER STRUCTURE WITH EFFICIENT LAYOUT - Disclosed herein are related to an integrated circuit having a dual power structure with an efficient layout and a method of forming the integrated circuit. In one aspect, the integrated circuit includes a substrate, a first layer facing the substrate, and a second layer facing the first layer. In one aspect, the first layer includes a set of first metal rails, where each of the set of first metal rails may be separated from its adjacent one of the set of first metal rails according to a uniform pitch along a direction. In one aspect, the second layer includes a set of second metal rails, where the set of second metal rails may include two adjacent second metal rails separated according to a first pitch along the direction and additional two adjacent second metal rails separated according to a second pitch along the direction. | 2021-07-01 |
20210202385 | Structure and Method for Transistors Having Backside Power Rails - The present disclosure provides one embodiment of a semiconductor structure. The semiconductor structure includes a substrate having a front side and a back side; a gate stack formed on the front side of the substrate and disposed on an active region of the substrate; a first source/drain feature formed on the active region and disposed at an edge of the gate stack; a backside power rail formed on the back side of the substrate; and a backside contact feature interposed between the backside power rail and the first source/drain feature, and electrically connecting the backside power rail to the first source/drain feature. The backside contact feature further includes a first silicide layer on the back side of the substrate. | 2021-07-01 |
20210202386 | PLANAR POWER MODULE WITH SPACIALLY INTERLEAVED STRUCTURE - Provided is a planar power module with a spatially interleaved structure, including a top power substrate, a bottom power substrate arranged opposite to the top power substrate, and a plurality of interleaved switch units configured between the top power substrate and the bottom power substrate; wherein adjacent interleaved switch units are electrically connected through a current commutator so that the interleaved switch units form spatial position interleaving. Problems of uneven parallel currents and uneven heat dissipation in the power module are solved. | 2021-07-01 |
20210202387 | STACKED IC STRUCTURE WITH ORTHOGONAL INTERCONNECT LAYERS - Some embodiments of the invention provide a three-dimensional ( | 2021-07-01 |
20210202388 | TUNGSTEN STRUCTURES AND METHODS OF FORMING THE STRUCTURES - Described are methods for forming a tungsten conductive structure over a substrate, such as a semiconductor substrate. Described examples include forming a silicon-containing material, such as a doped silicon-containing material, over a supporting structure. The silicon-containing material is then subsequently converted to a tungsten seed material containing the dopant material. A tungsten fill material of lower resistance will then be formed over the tungsten seed material. | 2021-07-01 |
20210202389 | SEMICONDUCTOR PACKAGES AND METHODS OF FORMING THE SAME - A semiconductor package includes a first interposer, a second interposer, a first die, a second die and at least one bridge structure. The first interposer and the second interposer are embedded by a first dielectric encapsulation. The first die is disposed over and electrically connected to the first interposer. The second die is disposed over and electrically connected to the second interposer. The at least one bridge structure is disposed between the first die and the second die. | 2021-07-01 |
20210202390 | PACKAGE STRUCTURE AND MANUFACTURING METHOD THEREOF - A package structure including a redistribution circuit structure, a first chip, a second chip, a first circuit board, a second circuit board, and a plurality of conductive terminals is provided. The redistribution circuit structure has a first connection surface and a second connection surface opposite to the first connection surface. The first chip and the second chip are disposed on the first connection surface and are electrically connected to the redistribution circuit structure. The first circuit board and the second circuit board are disposed on the second connection surface and are electrically connected to the redistribution circuit structure. The conductive terminals are disposed on the first circuit board or the second circuit board. The conductive terminals are electrically connected to the first circuit board or the second circuit board. A manufacturing method of a package structure is also provided. | 2021-07-01 |
20210202391 | Segregated Power and Ground Design for Yield Improvement - A method includes encapsulating a plurality of package components in an encapsulant, and forming a first plurality of redistribution layers over and electrically coupling to the plurality of package components. The first plurality of redistribution layers have a plurality of power/ground pad stacks, with each of the plurality of power/ground pad stacks having a pad in each of the first plurality of redistribution layers. The plurality of power/ground pad stacks include a plurality of power pad stacks, and a plurality of ground pad stacks. At least one second redistribution layer is formed over the first plurality of redistribution layers. The second redistribution layer(s) include power lines and electrical grounding lines electrically connecting to the plurality of power/ground pad stacks. | 2021-07-01 |
20210202392 | ASSEMBLY STRUCTURE AND PACKAGE STRUCTURE - An assembly structure includes a core-computing section and a sub-computing section. The core-computing section has a first surface and a second surface opposite to the first surface. The core-computing section includes at least one conductive via electrically connecting the first surface and the second surface. The sub-computing section has a first surface stacked on the first surface of the core-computing section and a second surface opposite to the first surface. The sub-computing section includes at least one conductive via electrically connecting the first surface and the second surface. The assembly structure includes a first signal transmission path and a second signal transmission path. The first signal transmission path is between the at least one conductive via of the sub-computing section and the at least one conductive via of the core-computing section. The second signal transmission path is between the second surface of the sub-computing section and the at least one conductive via of the sub-computing section. | 2021-07-01 |
20210202393 | SEMICONDUCTOR PACKAGE STRUCTURE AND METHOD FOR MANUFACTURING THE SAME - A package structure includes a substrate, a first electronic component, a second electronic component, a third electronic component and a connection component. The substrate includes a first surface and a second surface opposite the first surface. The first electronic component is disposed at the substrate and has a first active surface exposed from the second surface of the substrate. The second electronic component includes a second active surface facing the first active surface of the first electronic component. The second active surface of the second electronic component is electrically connected to the first active surface of the first electronic component. The third electronic component includes a third active surface facing the first active face of the first electronic component. The connection component electrically connects the third active surface of the third electronic component to the first active surface of the first electronic component. The connection component has at least two bendings. | 2021-07-01 |
20210202394 | PACKAGE STRUCTURE - A package structure includes a first substrate, a second substrate, a plurality of dies, a plurality of first conductive elements, and a plurality of second conductive elements. The first substrate has a recessed region. The second substrate is disposed in the recessed region and protrudes from the first substrate. The dies are disposed on the first substrate and the second substrate, such that the second substrate is disposed between the first substrate and the dies. The first conductive elements are disposed between the dies and the first substrate. The dies are electrically connected with the first substrate through the first conductive elements. The second conductive elements are disposed between the dies and the second substrate. The dies are electrically connected with the second substrate through the second conductive elements. | 2021-07-01 |
20210202395 | SEMICONDUCTOR PACKAGE STRUCTURE AND METHOD FOR MANUFACTURING THE SAME - A semiconductor package structure includes a first semiconductor die, a second semiconductor die, a third semiconductor die and an external contact. The second semiconductor die is disposed adjacent to the first semiconductor die. The third semiconductor die electrically connects the first semiconductor die and the second semiconductor die. The external contact is electrically connected to the third semiconductor die. An electrical path between the third semiconductor die and the external contact extends through a space between the first semiconductor die and the second semiconductor die. | 2021-07-01 |
20210202396 | Semiconductor Device and Method of Manufacturing - Semiconductor devices and methods of forming the semiconductor devices are described herein that are directed towards the formation of a system on integrated substrate (SoIS) package. The SoIS package includes an integrated fan out structure and a device redistribution structure for external connection to a plurality of semiconductor devices. The integrated fan out structure includes a plurality of local interconnect devices that electrically couple two of the semiconductor devices together. In some cases, the local interconnect device may be a silicon bus, a local silicon interconnect, an integrated passive device, an integrated voltage regulator, or the like. The integrated fan out structure may be fabricated in wafer or panel form and then singulated into multiple integrated fan out structures. The SoIS package may also include an interposer connected to the integrated fan out structure for external connection to the SoIS package. | 2021-07-01 |
20210202397 | SEMICONDUCTOR PACKAGES - A semiconductor package includes a lower connection structure, a semiconductor chip on the lower connection structure, an upper connection structure including a first conductive pattern layer on the semiconductor chip, a first insulating layer on the first conductive pattern layer, a second conductive pattern layer on the first insulating layer, a first via penetrating the first insulating layer to extend between the first conductive pattern layer and the second conductive pattern layer, and a second insulating layer extending between a side surface of the first via and the first insulating layer, and an intermediate connection structure between the lower connection structure and the upper connection structure. A chemical composition of the first insulating layer may differ from a chemical composition of the second insulating layer. | 2021-07-01 |
20210202398 | System on Integrated Chips and Methods of Forming the Same - A semiconductor device and methods of forming are provided. The device includes a second die bonded to a first die and a third die bonded to the first die. An isolation material extends along sidewalls of the second die and the third die. A through via extends from the first die into the isolation material. A first passive device disposed in the isolation material, the first passive device being electrically connected to the first die. | 2021-07-01 |
20210202399 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF - A semiconductor device includes a gate electrode, a source/drain structure, a lower contact contacting either of the gate electrode or the source/drain structure, and an upper contact disposed in an opening formed in an interlayer dielectric (ILD) layer and in direct contact with the lower contact. The upper contact is in direct contact with the ILD layer without an interposing conductive barrier layer, and the upper contact includes ruthenium. | 2021-07-01 |
20210202400 | DISCRETE MAGNETIC SHIELDING SHEET - The structure includes a substrate. The structure includes a semiconductor chip connected to the substrate via on or more solder balls. The structure includes a magnetic shielding sheet located between the substrate and the semiconductor chip. | 2021-07-01 |
20210202401 | ELECTRONIC ASSEMBLY, ELECTRONIC APPARATUS INCLUDING THE SAME AND METHOD FOR FABRICATING ELECTRONIC ASSEMBLY - An electronic assembly according to an embodiment includes: a circuit board including a first edge surface and a trace having an electrical conductivity; an electronic element including a lateral edge spatially spaced apart from the first edge surface, and mounted on the circuit board and electrically connected to the trace; a protection layer including a second edge surface and disposed on the electronic element to substantially cover the electronic element; a magnetic field shielding film including a third edge surface and disposed on the protection layer; and a first metal layer. The first edge surface connects a main top surface of the circuit board and a main bottom surface of the circuit board, the second edge surface connects a main top surface of the protection layer and a main bottom surface of the protection layer, and the third edge surface connects a main top surface of the magnetic field shielding film and a main bottom surface of the magnetic field shielding film, and the first edge surface, the second edge surface, and the third edge surface are substantially aligned with one another to form a coupling edge surface which is substantially planar. In addition, the first metal layer is disposed on the magnetic field shielding film, and covers the main top surface of the magnetic field shielding film and the coupling edge surface. | 2021-07-01 |
20210202402 | SEMICONDUCTOR PACKAGE - A semiconductor package includes a semiconductor chip, a redistribution insulating layer having a first opening, and an external connection bump including a first portion filling the first opening. A lower bump pad includes a first surface and a second surface opposite the first surface. The first surface includes a contact portion that directly contacts the first portion of the external connection bump and a cover portion surrounding side surfaces of the contact portion. A first conductive barrier layer surrounds side surfaces of the lower bump pad and is disposed between the lower bump pad and the redistribution insulating layer. A redistribution pattern directly contacts the second surface of the lower bump pad and is configured to electrically connect the lower bump pad to the semiconductor chip. | 2021-07-01 |
20210202403 | ELECTROSTATIC DISCHARGE PROTECTION IN INTEGRATED CIRCUITS USING MATERIALS WITH OPTICALLY CONTROLLED ELECTRICAL CONDUCTIVITY - Disclosed herein are structures, devices, and methods for electrostatic discharge protection (ESDP) in integrated circuits (ICs). In some embodiments, an IC component may include: a first conductive structure; a second conductive structure; and a material in contact with the first conductive structure and the second conductive structure, wherein the material has a first electrical conductivity before illumination of the material with optical radiation and a second electrical conductivity, different from the first electrical conductivity, after illumination of the material with optical radiation. | 2021-07-01 |
20210202404 | ELECTROSTATIC DISCHARGE PROTECTION IN INTEGRATED CIRCUITS USING POSITIVE TEMPERATURE COEFFICIENT MATERIAL - Disclosed herein are structures, devices, and methods for electrostatic discharge protection (ESDP) in integrated circuits (ICs). In some embodiments, an IC package support may include: a first conductive structure; a second conductive structure; and a material in contact with the first conductive structure and the second conductive structure, wherein the material includes a positive temperature coefficient material. | 2021-07-01 |
20210202405 | APPARATUS INCLUDING AN ISOLATION ASSEMBLY - Described examples include an apparatus including a package substrate having a die attach pad and a first semiconductor die on the die attach pad, the first semiconductor die including a transmitter. The apparatus also includes an assembly having a first plate coupled to the transmitter, a second plate separated from the first plate by a dielectric and a second semiconductor die on the die attach pad, the second semiconductor die including a receiver coupled to the second plate. | 2021-07-01 |
20210202406 | SEMICONDUCTOR DEVICE PACKAGE AND METHOD OF MANUFACTURING THE SAME - A semiconductor device package includes a first circuit layer and an emitting device. The first circuit layer has a first surface, a second surface opposite to the first surface and a lateral surface extending between the first surface and the second surface. The emitting device is disposed on the second surface of the first circuit layer. The emitting device has a first surface facing the second surface of the first circuit layer, a second surface opposite to the first surface and a lateral surface extending between the first surface and the second surface. The emitting device has a conductive pattern disposed on the second surface of the emitting device. The lateral surface of the emitting device and the lateral surface of the first circuit layer are discontinuous. | 2021-07-01 |
20210202407 | CHIP PACKAGE STRUCTURE AND MANUFACTURING METHOD THEREOF - A chip package structure includes at least one chip, at least one thermally conductive element, a molding compound, and a redistribution layer. The respective chip has an active surface and a back surface opposite to each other and a plurality of electrodes disposed on the active surface. The thermally conductive element is disposed on the back surface of the respective chip. The molding compound encapsulates the chip and the thermally conductive element and has an upper surface and a lower surface opposite to each other. A bottom surface of each of the electrodes of the respective chip is aligned with the lower surface of the molding compound. The molding compound exposes a top surface of the respective thermally conductive element. The redistribution layer is disposed on the lower surface of the molding compound and electrically connected to the electrodes of the respective chip. | 2021-07-01 |
20210202408 | TRANSISTOR DIE WITH OUTPUT BONDPAD AT THE INPUT SIDE OF THE DIE, AND POWER AMPLIFIERS INCLUDING SUCH DIES - A power transistor die includes a semiconductor die with input and output die sides, and a transistor integrally formed in the semiconductor die between the input die side and the output die side, where the transistor has an input and an output (e.g., a gate and a drain, respectively). The power transistor die also includes an input bondpad and a first output bondpad integrally formed in the semiconductor die between the input die side and the transistor. The input bondpad is electrically connected to the input of the transistor. A conductive structure directly electrically connects the output of the transistor to the first output bondpad. A second output bondpad, which also may be directly electrically connected to the transistor output, may be integrally formed in the semiconductor die between the transistor and the output die side. | 2021-07-01 |
20210202409 | SEMICONDUCTOR PACKAGE STRUCTURE AND METHOD FOR MANUFACTURING THE SAME - A semiconductor package structure includes a redistribution structure and an impedance matching device. The redistribution structure includes a first surface, a second surface opposite to the first surface and a circuitless region extending from the first surface to the second surface. The impedance matching device is disposed on the redistribution structure and includes at least one impedance matching circuit aligned with the circuitless region. | 2021-07-01 |
20210202410 | SEMICONDUCTOR DEVICE PACKAGE - A semiconductor device package includes a first surface and a second surface opposite to the first surface. The semiconductor device package further includes a first supporting structure disposed on the first surface of the substrate and a second supporting structure disposed on the first surface of the substrate. The first supporting structure has a first surface spaced apart from the first surface of the substrate by a first distance. The second supporting structure has a first surface spaced apart from the first surface of the substrate by a second distance. The second distance is different from the first distance. The semiconductor device package further includes a first antenna disposed above the first surface of the substrate. The first antenna is supported by the first surface of the first supporting structure and the first surface of the second supporting structure. | 2021-07-01 |
20210202411 | 3DI Solder Cup - A substrate or semiconductor device, semiconductor device assembly, and method of forming a semiconductor device assembly that includes a barrier on a solder cup. The semiconductor device assembly includes a substrate disposed over another substrate. At least one solder cup extends from one substrate towards an under bump metal (UBM) on the other substrate. The barrier on the exterior of the solder cup may be a standoff to control a bond line between the substrates. The barrier may reduce solder bridging during the formation of a semiconductor device assembly. The barrier may help to align the solder cup with a UBM when forming a semiconductor device assembly and may reduce misalignment due to lateral movement of substrates and/or semiconductor devices. | 2021-07-01 |
20210202412 | SEMICONDUCTOR DEVICE PACKAGE AND METHOD OF MANUFACTURING THE SAME - A semiconductor device package and a method of manufacturing the same are provided. The semiconductor device package includes a circuit structure. The circuit structure includes a dielectric layer and a bonding pad. The dielectric layer has a first dielectric surface and a second dielectric surface opposite to the first dielectric surface, where the dielectric layer defines a recess in the first dielectric surface, and the recess includes a sidewall. The bonding pad is disposed in the recess, where a first pad surface of the bonding pad is adjacent to the first dielectric surface, a second pad surface of the bonding pad is adjacent to the second dielectric surface, and an edge of the bonding pad is spaced from the sidewall of the recess by a first distance. | 2021-07-01 |
20210202413 | SEMICONDUCTOR DEVICE PACKAGE AND METHOD OF MANUFACTURING THE SAME - A semiconductor device package includes a first electronic component having a first surface and a second surface opposite the first surface. The semiconductor device package further includes a first pad disposed on the first surface of the first electronic component. The first pad has a first surface facing away from the first surface of the first electronic component, a second surface opposite the first surface of the first pad, and a lateral surface extended between the first surface of the first pad and the second surface of the first pad. The semiconductor device package further includes a second pad disposed on the first surface of the first pad. The second pad has a first surface facing away from the first surface of the first pad, a second surface opposite the first surface of the second pad, and a lateral surface extended between the first surface of the second pad and the second surface of the second pad. A width of the first surface of the second pad is greater than a width of the second surface of the second pad. A method of manufacturing a semiconductor device package is also disclosed. | 2021-07-01 |
20210202414 | PACKAGE SUBSTRATE AND SEMICONDUCTOR PACKAGE INCLUDING THE SAME - A package substrate may include an insulation substrate, at least one redistribution layer (RDL) and a redistribution pad. The RDL may be included in the insulation substrate. The redistribution pad may extend from the RDL. The redistribution pad may include at least one segmenting groove in a radial direction of the redistribution pad. Thus, the at least one segmenting groove in the radial direction of the redistribution pad may reduce an area of the redistribution pad. Therefore, application of physical stress to a PID disposed over the redistribution pad may be suppressed, and thus generation of cracks in the PID may be reduced. Further, spreading of the cracks toward the redistribution pad from the PID may also be suppressed, and thus reliability the semiconductor package may be improved. | 2021-07-01 |
20210202415 | SEMICONDUCTOR DEVICE INCLUDING REDISTRIBUTION LAYER AND METHOD FOR FABRICATING THE SAME - A semiconductor device includes: a lower structure; a redistribution insulating layer disposed over the lower structure; a redistribution conductive layer disposed over the redistribution insulating layer and electrically connected to a part of the lower structure, the redistribution conductive layer including a redistribution pad; and a protective layer covering the redistribution insulating layer and the redistribution conductive layer while leaving the redistribution pad exposed. The redistribution conductive layer includes a trench disposed adjacent to the redistribution pad, and a part of the protective layer fills the trench. | 2021-07-01 |
20210202416 | METHOD FOR PREPARING A SEMICONDUCTOR DEVICE WITH SPACER OVER SIDEWALL OF BONDING PAD - The present application provides a method for preparing a semiconductor device, include the following steps: forming a source/drain (S/D) region in a semiconductor substrate; forming a bonding pad over the semiconductor substrate; forming a first spacer over a sidewall of the bonding pad; forming a first passivation layer covering the bonding pad and the first spacer; and forming a conductive bump over the first passivation layer, wherein the conductive bump penetrates through the first passivation layer to electrically connect to the bonding pad and the S/D region. | 2021-07-01 |
20210202417 | MICROELECTRONIC DEVICES AND APPARATUSES HAVING A PATTERNED SURFACE STRUCTURE - A connector structure and a manufacturing method thereof are provided. The connector structure includes a semiconductor substrate, a metal layer, a passivation layer, and a conductive structure. The metal layer is over the semiconductor substrate. The passivation layer is over the metal layer and includes an opening. The conductive structure is in contact with the metal layer in a patterned surface structure of the conductive structure through the opening of the passivation layer. | 2021-07-01 |
20210202418 | PACKAGE STRUCTURE OF SEMICONDUCTOR DEVICE WITH IMPROVED BONDING BETWEEN THE SUBSTRATES - A package structure of a semiconductor device includes a first substrate, a second substrate, and a bonding layer. The bonding layer bonds the first substrate and the second substrate. The bonding layer includes an inner bonding pad pattern and an outer bonding pad pattern formed in a dielectric layer. The outer bonding pad pattern surrounds the inner bonding pad pattern. A first bonding pad density of the outer bonding pad pattern is greater than a second bonding pad density of the inner bonding pad pattern. | 2021-07-01 |
20210202419 | WLCSP PACKAGE WITH DIFFERENT SOLDER VOLUMES - The present disclosure is directed to a wafer level chip scale package (WLCSP) with various combinations of contacts and Under Bump Metallizations (UBMs) having different structures and different amounts solder coupled to the contacts and UBMs. Although the contacts have different structures and the volume of solder differs, the total standoff height along the WLCSP remains substantially the same. Each portion of solder coupled to each respective contact and UBM includes a point furthest away from an active surface of a die of the WLCSP. Each point of each respective portion of solder is co-planar with each other respective point of the other respective portions of solder. Additionally, the contacts with various and different structures are positioned accordingly on the active surface of the die of the WLCSP to reduce failures that may result from the WLCSP being exposed to thermal cycling or the WLCSP being dropped. | 2021-07-01 |
20210202420 | ALIGNMENT FEATURES FOR HYBRIDIZED IMAGE SENSOR - A hybridized image sensor includes a first die and a second die. The first die includes a first surface, a first plurality of conductive bumps fabricated on the first surface, and a first alignment feature fabricated on the first surface. The second die includes a second surface, a second plurality of conductive bumps fabricated on the second surface, and second alignment features fabricated on the second surface, wherein the first alignment features interact with the second alignment features to align the first plurality of conductive bumps with the second plurality of conductive bumps. | 2021-07-01 |
20210202421 | ELECTRONIC-PART-REINFORCING THERMOSETTING RESIN COMPOSITION, SEMICONDUCTOR DEVICE, AND METHOD FOR FABRICATING THE SEMICONDUCTOR DEVICE - An electronic-part-reinforcing thermosetting resin composition has: a viscosity of 5 Pa·s or less at 140° C.; a temperature of 150° C. to 170° C. as a temperature corresponding to a maximum peak of an exothermic curve representing a curing reaction; and a difference of 20° C. or less between the temperature corresponding to the maximum peak and a temperature corresponding to one half of the height of the maximum peak in a temperature rising range of the exothermic curve. | 2021-07-01 |
20210202422 | FLIP CHIP INTERCONNECTION AND CIRCUIT BOARD THEREOF - A flip chip interconnection includes a circuit board, a chip and a solder layer. The chip is mounted on an inner bonding area of the circuit board, the solder layer is located between the circuit board and the chip for bonding bumps to inner leads and a T-shaped circuit unit on the inner bonding area. The T-shaped circuit unit has a main part, a connection part and a branch part, the connection part is connected to the main and branch parts, respectively. The main part extends along a lateral direction and the branch part extends outwardly along a longitudinal direction. The connection part is narrower than the main part in width so as to prevent solder short caused by solder overflow on the branch part. | 2021-07-01 |
20210202423 | SEMICONDUCTOR PACKAGE - A semiconductor package includes a semiconductor chip including a contact pad on an active surface, a first insulating layer on the active surface including a first opening that exposes the contact pad, a redistribution layer connected to the contact pad and extending to an upper surface of the first insulating layer, a second insulating layer on the first insulating layer and including a second opening that exposes a contact region of the redistribution layer, a conductive post on the contact region, an encapsulation layer on the second insulating layer and surrounding the conductive post, and a conductive bump on an upper surface of the conductive post. The conductive post includes an intermetallic compound (IMC) layer in contact with the conductive bump. An upper surface of the IMC layer is lower than an upper surface of the encapsulation layer. | 2021-07-01 |
20210202424 | CONNECTION ELECTRODE AND METHOD FOR MANUFACTURING CONNECTION ELECTRODE - A connection electrode includes a first metal film, a second metal film, a mixed layer, and an extraction electrode. The second metal film is located on the first metal film, and the extraction electrode is located on the second metal film. The mixed layer includes a mix of metal particles of the first and second metal films. As viewed in a first direction in which the first metal film and the second metal film are on top of each other, at least a portion of the mixed layer is in a first region that overlaps a bonding plane between the extraction electrode and the second metal film. | 2021-07-01 |
20210202425 | SEMICONDUCTOR PACKAGE USING FLIP-CHIP TECHNOLOGY - A semiconductor package is provided. The semiconductor package includes a semiconductor device bonded to a base through a first conductive structure. The semiconductor device includes a carrier substrate including a conductive trace. A portion of the conductive trace is elongated. The semiconductor device also includes a second conductive structure above the carrier substrate. A portion of the second conductive structure is in contact with the portion of the conductive trace. The semiconductor device further includes a semiconductor body mounted above the conductive trace. The semiconductor body is connected to the second conductive structure. | 2021-07-01 |
20210202426 | SEMICONDUCTOR PACKAGE - A semiconductor package includes a first connection structure having first and second surfaces and including a first redistribution layer, a first semiconductor chip disposed on the first surface and having a first connection pad electrically connected to the first redistribution layer, a second semiconductor chip disposed around the first semiconductor chip on the first surface and having a second connection pad electrically connected to the first redistribution layer, an interconnection bridge disposed on the second surface to be spaced apart from the second surface and connected to the first redistribution layer through a connection member to electrically connect the first and second connection pads to each other, and a second connection structure disposed on the second surface to embed the interconnection bridge and including a second redistribution layer electrically connected to the first redistribution layer. | 2021-07-01 |
20210202427 | Arrangement With Central Carrier And Two Opposing Layer Stacks, Component Carrier and Manufacturing Method - An arrangement, a method of manufacturing component carriers and a component carrier are provided. The arrangement includes a central carrier structure having a front side and a back side, a first layer stack having a first surface structure made of another material than the interior of the first layer stack and covered by a first release layer which is attached to the front side, and a second layer stack covered by a second release layer which is attached to the back side. | 2021-07-01 |
20210202428 | BONDED STRUCTURES - A bonded structure can include a first element having a first conductive interface feature and a second element having a second conductive interface feature. An integrated device can be coupled to or formed with the first element or the second element. The first conductive interface feature can be directly bonded to the second conductive interface feature to define an interface structure. The interface structure can be disposed about the integrated device in an at least partially annular profile to connect the first and second elements. | 2021-07-01 |
20210202429 | ELECTRONIC MODULE - An electronic module has a sealing part | 2021-07-01 |
20210202430 | SEMICONDUCTOR INTERCONNECT STRUCTURES WITH NARROWED PORTIONS, AND ASSOCIATED SYSTEMS AND METHODS - Semiconductor devices having interconnect structures with narrowed portions configured to mitigate thermomechanical stresses, and associated systems and methods, are disclosed herein. In one embodiment, a semiconductor package includes a semiconductor die and a pillar structure coupled to the semiconductor die. The pillar structure can include an end portion away from the semiconductor die, the end portion having a first cross-sectional area. The pillar structure can further include a narrowed portion between the end portion and the semiconductor die, the narrowed portion having a second cross-sectional area less than the first-cross-sectional area of the end portion. A bond material can be coupled to the end portion of the pillar structure. | 2021-07-01 |
20210202431 | LASER REFLOW APPARATUS AND LASER REFLOW METHOD - A laser reflow apparatus reflows solder bumps disposed on a side of a semiconductor chip in a workpiece and included in an irradiation range on the workpiece by applying a laser beam to an opposite side of the semiconductor chip. The laser reflow apparatus includes a spatial beam modulation unit including a laser power density setting function to locally set the laser power density in the irradiation range of a laser beam emitted from a laser beam source, and an image focusing unit including an image focusing function to focus the laser beam emitted from the laser beam source and apply the focused laser beam to the irradiation range on the workpiece. | 2021-07-01 |
20210202432 | BONDING APPARATUS - A bonding apparatus is provided. This bonding apparatus uses images captured by an imaging apparatus and performs a packaging process for a semiconductor chip and additional processes other than the packaging process. The bonding apparatus is provided with: an aperture switching mechanism provided in an optical system of the imaging apparatus and capable of switching between a first aperture and a second aperture that has an aperture hole diameter greater than that of the first aperture; and a control unit which controls the aperture switching mechanism to switch to either the first aperture or the second aperture. The control unit performs the packaging process using an image captured by switching to the first aperture and performs the additional processes using an image captured by switching to the second aperture. | 2021-07-01 |
20210202433 | System and Method for Extreme Performance Die Attach - A method for fabricating semiconductor die with die-attach preforms is disclosed. In embodiments, the method includes: applying an uncured die-attach paste material to a surface of a forming substrate to form one or more die-attach preforms, the surface of the forming substrate formed from a hydrophobic material; curing the one or more die-attach preforms; performing one or more planarization processes on the one or more die-attach preforms; coupling a first surface of a semiconductor die to a handling tool; and bonding a second surface of the semiconductor die to at least one die-attach preform of the one or more die-attach preforms. | 2021-07-01 |
20210202434 | Method for Producing Conductive Tracks, and Electronic Module - Various embodiments include a method for producing a least one conductive track comprising: forming a surface with a thermoplastic; and depositing conductive track material on the surface by thermal spraying. | 2021-07-01 |
20210202435 | SEMICONDUCTOR DEVICE, METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE, AND POWER CONVERSION DEVICE - A first alignment resin ( | 2021-07-01 |