28th week of 2015 patent applcation highlights part 48 |
Patent application number | Title | Published |
20150194531 | TRANSPARENT CONDUCTING FILM AND PREPARATION METHOD THEREOF - There are provided a transparent conductive film and a method for preparing the same. The transparent conductive film of the present application comprises a compound having a crystalline structure and represented by Chemical Formula 1 and thus can be applied as a technology substituting for conventional ITO conductive films. | 2015-07-09 |
20150194532 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - In order to form a structure in which an oxide semiconductor layer through which a carrier flows is not in contact with a gate insulating film, a buried channel structure in which the oxide semiconductor layer through which a carrier flows is away from the gate insulating film containing silicon is provided. Specifically, a buffer layer is provided between the gate insulating film and the oxide semiconductor layer. Both the oxide semiconductor layer and the buffer layer are formed using materials containing indium and another metal element. The composition of indium with respect to gallium contained in the oxide semiconductor layer is higher than the composition of indium with respect to gallium contained in the buffer layer. The buffer layer has a smaller thickness than the oxide semiconductor layer. | 2015-07-09 |
20150194533 | SEMICONDUCTOR DEVICE - An object of the present invention is to provide a semiconductor device in which stored data can be held even when power is not supplied for a certain time. Another object is to increase the degree of integration of a semiconductor device and to increase the storage capacity per unit area. A semiconductor device is formed with a material capable of sufficiently reducing off-state current of a transistor, such as an oxide semiconductor material that is a wide-bandgap semiconductor. With the use of a semiconductor material capable of sufficiently reducing off-state current of a transistor, the semiconductor device can hold data for a long time. Furthermore, a wiring layer provided under a transistor, a high-resistance region in an oxide semiconductor film, and a source electrode are used to form a capacitor, thereby reducing the area occupied by the transistor and the capacitor. | 2015-07-09 |
20150194534 | THIN FILM TRANSISTOR, THIN FILM TRANSISTOR ARRAY PANEL INCLUDING THE SAME, AND METHOD OF MANUFACTURING THE SAME - A thin film transistor according to an exemplary embodiment of the present invention includes an oxide semiconductor. A source electrode and a drain electrode face each other. The source electrode and the drain electrode are positioned at two opposite sides, respectively, of the oxide semiconductor. A low conductive region is positioned between the source electrode or the drain electrode and the oxide semiconductor. An insulating layer is positioned on the oxide semiconductor and the low conductive region. A gate electrode is positioned on the insulating layer. The insulating layer covers the oxide semiconductor and the low conductive region. A carrier concentration of the low conductive region is lower than a carrier concentration of the source electrode or the drain electrode. | 2015-07-09 |
20150194535 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - A semiconductor device which includes an oxide semiconductor layer, a source electrode and a drain electrode electrically connected to the oxide semiconductor layer, a gate insulating layer covering the oxide semiconductor layer, the source electrode, and the drain electrode, and a gate electrode over the gate insulating layer is provided. The thickness of the oxide semiconductor layer is greater than or equal to 1 nm and less than or equal to 10 nm. The gate insulating layer satisfies a relation where ∈ | 2015-07-09 |
20150194536 | GRAPHENE DEVICES WITH LOCAL DUAL GATES - An electronic device comprises an insulator, a local first gate embedded in the insulator with a top surface of the first gate being substantially coplanar with a surface of the insulator, a first dielectric layer formed over the first gate and insulator, and a channel. The channel comprises a bilayer graphene layer formed on the first dielectric layer. The first dielectric layer provides a substantially flat surface on which the channel is formed. A second dielectric layer formed over the bilayer graphene layer and a local second gate formed over the second dielectric layer. Each of the local first and second gates is capacitively coupled to the channel of the bilayer graphene layer. The local first and second gates form a first pair of gates to locally control a first portion of the bilayer graphene layer. | 2015-07-09 |
20150194537 | MULTI-LAYER INTER-GATE DIELECTRIC STRUCTURE - A semiconductor device having a first gate stack on a substrate is disclosed. The first gate stack may include a first gate conductor over a first gate dielectric structure. A dielectric structure can be formed over the first gate stack and the substrate. The dielectric structure layer can include four or more layers of two or more dielectric films disposed in an alternating manner. The dielectric structure can be selectively etched to form an inter-gate dielectric structure. A second gate conductor can be formed over a second gate dielectric structure, adjacent to the inter-gate dielectric structure. A dielectric layer can be formed over the substrate, the first and second gate conductors, and the inter-gate dielectric structure. The first gate conductor may be used to make a memory gate and the second gate conductor can be used to make a select gate of a split-gate memory cell. | 2015-07-09 |
20150194538 | Multiple Control Transcap Variable Capacitor - A novel semiconductor variable capacitor is presented. The semiconductor structure is simple and is based on a semiconductor variable MOS capacitor structure suitable for integrated circuits, which has at least three terminals, one of which is used to modulate the equivalent capacitor area of the MOS structure by increasing or decreasing its DC voltage with respect to another terminal of the device, in order to change the capacitance over a wide ranges of values. Furthermore, the present invention decouples the AC signal and the DC control voltage minimizing the distortion and increasing the performance of the device, such as its control characteristic. The present invention is simple and only slightly dependent on the variations due to the fabrication process. It exhibits a high value of capacitance density and, if opportunely implemented, shows a quasi linear dependence of the capacitance value with respect to the voltage of its control terminal. | 2015-07-09 |
20150194539 | SOLAR CELL WITH SILICON OXYNITRIDE DIELECTRIC LAYER - Solar cells with silicon oxynitride dielectric layers and methods of forming silicon oxynitride dielectric layers for solar cell fabrication are described. For example, an emitter region of a solar cell includes a portion of a substrate having a back surface opposite a light receiving surface. A silicon oxynitride (SiO | 2015-07-09 |
20150194540 | OPTICAL DETECTOR - Disclosed is an optical detector. The optical detector includes: a first dielectric layer; a graphene optical transmission line formed on the first dielectric layer; a graphene optical detector formed on the first dielectric layer and configured to detect light transmitted along the graphene optical transmission line; electric wires formed on the graphene optical detector; metal pads positioned at both ends of the graphene optical detector and connected with the electric wires; and a second dielectric layer formed on the graphene optical transmission line, in which the graphene optical detector detects an intensity of light incident in a horizontal direction with respect to a surface of the graphene optical transmission line. | 2015-07-09 |
20150194541 | BARRIER FILM, METHOD OF MAKING THE BARRIER FILM, AND ARTICLES INCLUDING THE BARRIER FILM - A barrier film that includes a substrate, a first polymer layer on a major surface of the substrate, an oxide layer on the first polymer layer, and a second polymer layer on the oxide layer. At least one of the first or second polymer layers includes a siloxane reaction product of a secondary or tertiary amino-functional silane having at least two silane groups. A method of making the barrier film and articles and a barrier assembly including the barrier film are also disclosed. | 2015-07-09 |
20150194542 | PHOTOCONDUCTIVE ANTENNA - A PCA is provided including: a semiconductor substrate; a metallic antenna, formed on one surface of the semiconductor substrate; and a first pattern structure, formed on the same surface of the semiconductor substrate as the surface on which the metallic antenna is formed, to obstruct surface waves and/or back-scattered waves. | 2015-07-09 |
20150194543 | INTEGRATED PHOTODETECTOR WAVEGUIDE STRUCTURE WITH ALIGNMENT TOLERANCE - An encapsulated integrated photodetector waveguide structures with alignment tolerance and methods of manufacture are disclosed. The method includes forming a waveguide structure bounded by one or more shallow trench isolation (STI) structure(s). The method further includes forming a photodetector fully landed on the waveguide structure. | 2015-07-09 |
20150194544 | LIGHT SENSORS HAVING DIELECTRIC OPTICAL COATING FILTERS - A light sensor includes a photodetector sensor region formed in a semiconductor substrate. To shape the spectral response of the light sensor, a dielectric optical coating filter covers the photodetector sensor region and a circumferential region of the substrate that surrounds the photodetector sensor region. In accordance with specific embodiments, the dielectric optical coating filter has chamfered corners to improve the thermal reliability of the dielectric optical coating covering the photodetector sensor region. Methods for making such a light sensor are also disclosed. | 2015-07-09 |
20150194545 | Dendritic Metal Structures, Methods for Making Dendritic Metal Structures, and Devices Including Them - The present invention relates generally to dendritic metal structures and devices including them. The present invention also relates particularly to methods for making dendritic metal structures without the use of solid electrolyte materials. In one aspect, a method for constructing a dendritic metal structure includes providing a substrate having a surface and a cathode disposed on the surface; providing an anode comprising a metal; and disposing a liquid on the surface of the substrate, such that the liquid is in electrical contact with the anode and the cathode; and then applying a bias voltage across the cathode and the anode sufficient to grow the dendritic metal structure extending from the cathode. The methods described herein can be used to grow dendritic metal electrodes, which can be useful in devices such as LEDs, touchscreens, solar cells and photodetectors. | 2015-07-09 |
20150194546 | LOW-SILVER ELECTROCONDUCTIVE PASTE - An electroconductive paste composition for electrode formation in solar cells including about 20 to about 50 wt % spherical silver powder having a particle size d | 2015-07-09 |
20150194547 | SYSTEMS AND METHODS FOR MONOLITHICALLY ISLED SOLAR PHOTOVOLTAIC CELLS - The method for forming a monolithically isled solar cell comprises forming a first metal layer having base and emitter metallization on a passivated backside of a semiconductor substrate. An insulating support backplane is attached to a surface of the first metal layer and at least a portion of the semiconductor substrate passivated backside. Trenches are formed through the semiconductor substrate to the insulating support backplane in a trench isolation pattern partitioning the semiconductor substrate into a plurality of monolithically isled semiconductor regions. Vias are formed in the insulating support backplane to portions of the first metal layer base and emitter metallization. A second metal layer having base and emitter metallization is formed on the insulating support backplane. The second metal layer is electrically connected to portions of the first metal layer base and emitter metallization through the vias. | 2015-07-09 |
20150194548 | LARGE-GRAIN CRYSTALLIZED METAL CHALCOGENIDE FILM, COLLOIDAL SOLUTION OF AMORPHOUS PARTICLES, AND PREPARATION METHODS - The present invention relates to a method for preparing an aqueous or hydro-alcoholic colloidal solution of metal chalcogenide amorphous nanoparticles notably of the Cu | 2015-07-09 |
20150194549 | SOLAR CELLS - A composition of matter, in particular a photovoltaic cell, comprising: at least one core semiconductor nanowire on a graphitic substrate, said at least one core nanowire having been grown epitaxially on said substrate wherein said nanowire comprises at least one group III-V compound or at least one group II-VI compound or at least one group IV element; a semiconductor shell surrounding said core nanowire, said shell comprising at least one group III-V compound or at least one group II-VI compound or at least one group IV element such that said core nanowire and said shell form a n-type semiconductor and a p-type semiconductor respectively or vice versa; and an outer conducting coating surrounding said shell which forms an electrode contact. | 2015-07-09 |
20150194550 | DETACHMENT OF A SELF-SUPPORTING LAYER OF SILICON <100> - A method for detaching a self-supporting layer of silicon of crystalline orientation <100>, particularly with the aim of applications in the field of photovoltaics, wherein the method includes the steps of: a) Implanting ionic species in a substrate made of silicon having a crystalline orientation <100> so as to create an embrittlement plane in the substrate, delimiting on both sides a self-supporting layer and a negative of the substrate, and b) Applying a heat treatment to the substrate implanted at step a) with a temperature ramp greater than 30° C./s so as to detach the self-supporting layer of silicon. | 2015-07-09 |
20150194551 | SOLAR CELL ARRAY HAVING TWO DIFFERENT TYPES OF CELLS - A solar cell array includes multiple cells connected to one another in series on a surface. The array includes first and second different types of solar cells. Incorporating two different types of cells can facilitate various layouts of the cells in the array, including compact arrangements. In some implementations, the use of two different types of cells can allow arrangements in which voltage terminals of opposite polarity to be disposed at a sufficiently large distance from one another so as to help reduce the occurrence of ESD. | 2015-07-09 |
20150194552 | SOLAR CELL MODULE AND METHOD FOR MANUFACTURING THE SOLAR CELL MODULE - A solar cell module includes a translucent member disposed at a light-receiving side, a glass plate, having a through-hole, which is provided in such a position as to face the translucent member, a photovoltaic device provided between the translucent member and the glass plate, a sealing portion that seals the through-hole, a wiring, which is connected to the photovoltaic device and which is arranged in such a manner as to extend below the sealing portion, and a conductive member arranged on top of the wiring and below the sealing portion. The sealing portion includes a glass member, joined to an inner circumferential surface of the through-hole, and a metal terminal that outputs the electric power, generated in the photovoltaic device, to the exterior. The metal terminal is joined to the glass member in a manner such that the metal terminal penetrates the glass member. | 2015-07-09 |
20150194553 | THERMALLY CONDUCTIVE ENCAPSULATE AND SOLAR CELL MODULE COMPRISING THE SAME - A thermally conductive encapsulate comprising a thermally conductive composite layer having a thermal conductivity of 0.5 W/m*K to 8 W/m*K and an adhesive resin layer having a thermal conductivity of 0.05 W/m*K to 0.4 W/m*K is provided. A percentage of a thickness of the adhesive resin layer relative to a total thickness of the thermally conductive encapsulate ranges from 0.1% to 10%, and the thermally conductive encapsulate has an overall thermal impedance less than 0.72° C.-in | 2015-07-09 |
20150194554 | STRUCTURE OF CONCENTRATING SOLAR CELL MODULE WITH REDUCED HEIGHT - The present invention relates to a structure of concentrating solar cell module with reduced height, which includes multiple partitions and reflection mirrors. The solar cell receiver is attach to a surface of the partition and rotated by 90 degrees. After the reflection leans against a surface of another partition, the light concentrated by the concentrating lens can be redirected from vertical incidence to horizontal incidence. Then the redirected light is focused at the 90-degree rotated solar cell receiver for performing energy conversion. This structure avoids the limitation of the concentrating solar cell module by the focal distance of the concentrating lens. Thereby, the height of the module is reduced substantially; the volume of the module becomes thinner and the weight thereof becomes lighter and thus facilitating installation and transportation. | 2015-07-09 |
20150194555 | PACKAGED LUMINESCENT SOLAR CONCENTRATOR PANEL FOR PROVIDING HIGH EFFICIENCY LOW COST SOLAR HARVESTING - Described herein are packaged luminescent solar concentrator panels. Some embodiments comprise a photovoltaic device (e.g a solar cell), a luminescent solar concentrator, and a rigid base. The packaged luminescent solar concentrator forms a rigid structure. A frame may be used to engage the at least one photovoltaic device. The luminescent solar concentrator device can comprise a planar layer that acts to absorb photons. The packaged luminescent solar concentrator panel collects both direct and diffuse light and provides highly efficient and low cost solar harvesting solutions by using a minimal amount of expensive solar cells. The packaged luminescent solar concentrator panel is well suited for building integrated photovoltaics such as sunroofs, skylights, windows, and facades of commercial and residential buildings. | 2015-07-09 |
20150194556 | DEVICE FOR ADAPTABLE WAVELENGTH CONVERSION AND A SOLAR CELL - A device for adaptable wavelength conversion and a device for energy conversion are described. The device for adaptable wavelength conversion comprises at least one layer comprising a wavelength converting material and arranged to receive and re-emit a light beam. the device is further arranged to manipulate the at least one layer to operate in a closed state, in which a surface of the at least one layer is substantially covered with the wavelength converting material and to operate in an open state, in which the surface of the at least one layer is substantially uncovered with the wavelength converting material. The device for adaptable wavelength conversion can be applied in combination with a solar cell or photovoltaic cell thereby enabling the solar cell to receive radiation having a suitable spectrum under varying lighting conditions. | 2015-07-09 |
20150194557 | SOLAR HYBRID PHOTOVOLTAIC-THERMAL COLLECTOR ASSEMBLY AND METHOD OF USE - A solar collector assembly includes a photovoltaic panel having first and second sides, a frame, and a first gas-filled chamber on the first side of the photovoltaic panel. The first gas-filled chamber is at least partially defined by a portion of the frame and by a portion of the first side of the photovoltaic panel. A gas functions as a heat exchange fluid and collects heat from solar energy and/or heat generated by the photovoltaic panel. The photovoltaic panel accumulates and converts solar energy to electrical energy. The solar collector assembly may include a second gas-filled chamber provided on the second side of the photovoltaic panel. The second gas-filled chamber is at least partially defined by a portion of the frame and by a portion of the second side of the photovoltaic panel. Solar collector systems and methods of generating electrical energy and/or thermal energy are also described. | 2015-07-09 |
20150194558 | HEATING AND POWER GENERATING APPARATUS USING SOLAR ENERGY - A heating and power generating apparatus comprises: a frame installed on the roof of a building and having a predetermined area; a plurality of power generating units arranged inside the frame to collect sunlight and generate electricity; and a hot water supply unit buried inside of the frame to absorb sunlight and perform heating and hot water supply. According to the present invention, hot water can be generated by sunlight in the winter to supply hot water and heat a house, and power can be generated by sunlight in the summer to supply power for cooling a room and thus conserve the electrical energy used in a cooler, thus promoting energy saving and environmental protection. | 2015-07-09 |
20150194559 | PHOTOVOLTAIC MODULE WITH SOLAR CONCENTRATION - A light-concentrating photovoltaic module includes a substrate having a circuit, an array of solar cells located on the substrate and an optical element for focusing light onto the solar cells. The optical element is electrically connected to the circuit. Each of the solar cells has a first conductive region and a second conductive region, the first conductive region is electrically connected to the circuit, the second conductive region is electrically connected to the optical element to interconnect all the solar cells within the array of solar cells. | 2015-07-09 |
20150194560 | STRESSED SEMICONDUCTOR DETECTOR WITH PIEZOELECTRICAL COMPONENT - A semiconductor detector device comprising: a detector element comprising at least one active detector layer of piezoelectric semiconductor material; a stress inducing element arranged to act in use on the detector element to generate therein a predetermined pattern of stress, and consequently a predetermined electrical field via the piezoelectric effect. A method of fabrication and of operation of a semiconductor detector device embodying these principles are also described. | 2015-07-09 |
20150194561 | METHOD FOR PRODUCING CONCENTRATOR PHOTOVOLTAIC UNIT, PRODUCTION APPARATUS USED IN THE METHOD, METHOD FOR PRODUCING CONCENTRATOR PHOTOVOLTAIC MODULE, AND PRODUCTION APPARATUS USED IN THE METHOD - Mutual alignment between a condenser lens and its power generating element can be performed easily and accurately. | 2015-07-09 |
20150194562 | SILICON HETEROJUNCTION PHOTOVOLTAIC DEVICE WITH WIDE BAND GAP EMITTER - A photovoltaic device including a single junction solar cell provided by an absorption layer of a type IV semiconductor material having a first conductivity, and an emitter layer of a type III-V semiconductor material having a second conductivity, wherein the type III-V semiconductor material has a thickness that is no greater than 50 nm. | 2015-07-09 |
20150194563 | METHOD FOR SELECTIVE UNDER-ETCHING OF POROUS SILICON - A method for making a solar cell is disclosed. In accordance with the method of the present invention a composite wafer is formed. The composite layer includes a single crystal silicon wafer, a silicon-based device layer and sacrificial porous silicon sandwiched therebetween. The composite wafer is treated to an aqueous etchant maintained below ambient temperatures to selectively etch the sacrificial porous silicon and release or undercut the silicon-based layer from the single crystal silicon wafer. The released silicon device layer is attached to a substrate to make a solar cell and the released single crystal silicon wafer is reused to make additional silicon device layer. | 2015-07-09 |
20150194564 | SYSTEM AND METHOD FOR PHOTOVOLTAIC DEVICE TEMPERATURE CONTROL WHILE CONDITIONING A PHOTOVOLTAIC DEVICE - A system and method for applying an electrical bias to a photovoltaic device in a temperature control chamber, in which the temperature of the photovoltaic device is controlled according to a temperature profile. The temperature profile may include at least one hot phase and at least one cool phase. | 2015-07-09 |
20150194565 | Solid State Light Production Using Flexible Grouping Of LEDs - Solid state lighting devices (e.g., lamps and fixtures) are produced using unbinned/uncharacterized LEDs from an entire LED production “cloud” by way of sequentially measuring light emitted from the unbinned LEDs, and then assigning/placing each unbinned LED immediately into an associated LED product group (e.g., directly onto a PCB that forms part of the final lamp/fixture). The group assignment for each LED is based on how its measured light matches with other LEDs based on flexible group characteristics, which are generated in accordance with user-defined parameters, whereby each LED is placed in a product group such that light collectively generated by the LEDs of each product group complies with the user-defined parameters. The flexible group characteristics are also adjusted in real time (i.e., as batch-related characteristics of the LED “cloud” are acquired by way of the sequential testing), whereby the LED assignment process is modified for each LED batch. | 2015-07-09 |
20150194566 | PEELING METHOD AND METHOD FOR MANUFACTURING DISPLAY DEVICE USING THE PEELING METHOD - The present invention provides a simplifying method for a peeling process as well as peeling and transcribing to a large-size substrate uniformly. A feature of the present invention is to peel a first adhesive and to cure a second adhesive at the same time in a peeling process, thereby to simplify a manufacturing process. In addition, the present invention is to devise the timing of transcribing a peel-off layer in which up to an electrode of a semiconductor are formed to a predetermined substrate. In particular, a feature is that peeling is performed by using a pressure difference in the case that peeling is performed with a state in which plural semiconductor elements are formed on a large-size substrate. | 2015-07-09 |
20150194567 | Method and Structure for LED with Nano-Patterned Substrate - The present disclosure provides one embodiment of a method for fabricating light-emitting diode (LED) devices. The method includes forming a nano-mask layer on a first substrate, wherein the nano-mask layer has a randomly arranged grain pattern; growing a first epitaxy semiconductor layer in the first substrate, forming a nano-composite layer; growing a number of epitaxy semiconductor layers over the nano-composite layer; bonding a second substrate to the epitaxy semiconductor layers from a first side of the epitaxy semiconductor layers; applying a radiation energy to the nano-composite layer; and separating the first substrate from the epitaxy semiconductor layers from a second side of the epitaxy semiconductor layers. | 2015-07-09 |
20150194568 | SEMICONDUCTOR LIGHT-EMITTING ELEMENT - A semiconductor light-emitting element according to the present invention includes an In | 2015-07-09 |
20150194569 | METHOD FOR PRODUCING GaN-BASED CRYSTAL AND SEMICONDUCTOR DEVICE - A method for producing a GaN-based crystal includes forming a Zinc-blende type BP crystal layer on a Si substrate; forming an In-containing layer, on the BP crystal layer, with such a thickness as to keep the Zinc-blende type structure; and forming a Zinc-blende type GaN-based crystal layer on the In-containing layer. The In-containing layer is a metallic In layer having a thickness of 4 atom layers or less, an InGaN layer having a thickness of 2 nm or less, an InAl mixture layer having a thickness of 4 atom layers or less and containing Al at 10% or less, or an AlInGaN layer having a thickness of 2 nm or less and containing Al at 10% or less. | 2015-07-09 |
20150194570 | Light-Emitting Semiconductor Chip - A semiconductor chip includes a semiconductor body with a semiconductor layer sequence. An active region intended for generating radiation is arranged between an n-conductive multilayer structure and a p-conductive semiconductor layer. A doping profile is formed in the n-conductive multilayer structure which includes at least one doping peak. | 2015-07-09 |
20150194571 | SEMICONDUCTOR LIGHT EMITTING DEVICE - There is provided a semiconductor light emitting device including a first conductivity-type semiconductor base layer and a plurality of light emitting nanostructures disposed to be spaced apart from one another on the first conductivity-type semiconductor base layer, each light emitting nanostructure including a first conductivity-type semiconductor core, an active layer, an electric charge blocking layer, and a second conductivity-type semiconductor layer, respectively, wherein the first conductivity-type semiconductor core has different first and second crystal planes in crystallographic directions. | 2015-07-09 |
20150194572 | LIGHT-EMITTING DIODE PACKAGE - A light-emitting diode (“LED”) package includes a substrate, an LED chip on the substrate, and a light exit surface adjuster. The light exit surface adjuster includes a light-transmitting surface which transmits light and a light-blocking surface which is around the light-transmitting surface and blocks the light. The LED chip is between the light exit surface adjuster and the substrate, and an overlap area between the LED chip and the light-transmitting surface is smaller than an overall area of the LED chip. | 2015-07-09 |
20150194573 | LIGHT EMITTING DIODE CHIP HAVING DISTRIBUTED BRAGG REFLECTOR AND METHOD OF FABRICATING THE SAME - A light emitting diode chip including a substrate, a light emitting structure arranged on the substrate, the light emitting structure including an active layer arranged between a first conductive-type semiconductor layer and a second conductive-type semiconductor layer, and a distributed Bragg reflector to reflect light emitted from the light emitting structure. The distributed Bragg reflector has a reflectivity of at least 90% for light of a first wavelength in a blue wavelength range, light of a second wavelength in a green wavelength range, and light of a third wavelength in a red wavelength range, and the distributed Bragg reflector has a reflectivity of at least 90% for light in a full wavelength range of 400 to 700 nm. | 2015-07-09 |
20150194574 | OPTOELECTRONIC DEVICE AND METHOD FOR MANUFACTURING THE SAME - An optoelectronic device comprises a semiconductor stack, wherein the semiconductor stack comprises a first semiconductor layer, an active layer formed on the first semiconductor layer, and a second semiconductor layer formed on the active layer; an electrode formed on the second semiconductor layer, wherein the first electrode further comprises a reflective layer; and an insulative layer formed on the second semiconductor layer, and a space formed between the first electrode and the insulative layer. | 2015-07-09 |
20150194575 | WHITE LIGHT EMITTING DIODE AND BACKLIGHT MODULE - A white light emitting diode and a backlight module are provided. The light emitting diode comprises a blue chip and an encapsulating layer having yttrium aluminum garnet phosphor powder mixed therein, wherein the dominant wavelength in a frequency spectrum of blue light emitted from the blue chip is between 448 and 462.5 nm, the peak wavelength of yellow light emitted from the yttrium aluminum garnet phosphor powder is between 550 and 575 nm, and the doped concentration of the yttrium aluminum garnet phosphor powder is 0.01% to 0.1% by weight of the encapsulating layer. Due to the red shift of the peak wavelength of the blue light emitted from the blue chip, the brightness of the white LED is enhanced (>10%). | 2015-07-09 |
20150194576 | Light Emitting Diode Package and Method of Manufacture - A light emitting diode (LED) device and packaging for same is disclosed. In some aspects, the LED is manufactured using a vertical configuration including a plurality of layers. Certain layers act to promote mechanical, electrical, thermal, or optical characteristics of the device. The device avoids design problems, including manufacturing complexities, costs and heat dissipation problems found in conventional LED devices. Some embodiments include a plurality of optically permissive layers, including an optically permissive cover substrate or wafer stacked over a semiconductor LED and positioned using one or more alignment markers. | 2015-07-09 |
20150194577 | Cadmium-free Quantum Dot Nanoparticles - Quantum dot semiconductor nanoparticle compositions that incorporate ions such as zinc, aluminum, calcium, or magnesium into the quantum dot core have been found to be more stable to Ostwald ripening. A core-shell quantum dot may have a core of a semiconductor material that includes indium, magnesium, and phosphorus ions. Ions such as zinc, calcium, and/or aluminum may be included in addition to, or in place of, magnesium. The core may further include other ions, such as selenium, and/or sulfur. The core may be coated with one (or more) shells of semiconductor material. Example shell semiconductor materials include semiconductors containing zinc, sulfur, selenium, iron and/or oxygen ions. | 2015-07-09 |
20150194578 | LIGHT-EMITTING DEVICE, LIGHTING DEVICE INCLUDING THE LIGHT-EMITTING DEVICE, AND METHOD OF MANUFACTURING THE LIGHT-EMITTING DEVICE - A light-emitting device includes a light-emitting element with a pair of element electrodes as a first element electrode and a second element electrode positioned at the lower surface of the light-emitting element; a phosphor plate disposed on the upper surface of the light-emitting element; a first resin covering the lower surface and the peripheral side surface of the light-emitting element with the first element electrode and the second element electrode partly appearing from the first resin; and a second resin provided in the phosphor plate. | 2015-07-09 |
20150194579 | COLOR CONVERTING ELEMENT AND LIGHT EMITTING DEVICE INCLUDING THE SAME - Disclosed are a color converting element and a method for manufacturing the color converting element. The disclosed color converting element includes: first wavelength conversion cells spaced apart from one another; and second wavelength conversion cells arranged among the first wavelength conversion cells. The first and second wavelength conversion cells are made of a material containing glass. The color converting element of the disclosed technology is configured in that color converting cells having different color converting characteristics are periodically arranged, when the color converting element is applied to a color converting glass material which may improve thermal and chemical durability of white LEDs, thus minimizing the degradation of efficiency or luminance caused by an interaction between color converting phosphors or active ions and allowing for ease of adjustment of color rendering index. | 2015-07-09 |
20150194580 | LED PACKAGE WITH ENCAPSULANT HAVING PLANAR SURFACES - LED packages are disclosed that are compact and efficiently emit light, and can comprise encapsulants with planar surfaces that refract and/or reflect light within the package encapsulant. The packages can also comprise a submount with one or more LEDs, and a blanket conversion material layer on the one or more LEDs and the submount. The encapsulant can be on the submount, over the LEDs, and light reflected within the encapsulant will reach the conversion material, where it will be absorbed and emitted omnidirectionally. This allows for reflected light to now escape from the encapsulant. This allows for efficient emission and a broader emission profile, for example when compared to conventional packages with hemispheric encapsulants or lenses. In certain embodiments, the LED package provides a higher chip area to LED package area ratio. By using an encapsulant with planar surfaces, the LED package can provide unique dimensional relationships between the various features and the LED package ratios, enabling more flexibility in using the packages in different applications. | 2015-07-09 |
20150194581 | AGGREGATION OF SEMICONDUCTOR DEVICES AND THE METHOD THEREOF - A method of manufacturing an aggregation of semiconductor devices comprising the steps of providing a first layer; sequentially addressing and adhering a plurality of semiconductor devices to the first layer to form a shape having a curve; providing a second layer; and adhering the second layer to the first layer. | 2015-07-09 |
20150194582 | LIGHT REFLECTING SUBSTRATE FOR LED APPLICATIONS - A ceramic substrate ( | 2015-07-09 |
20150194583 | OPTOELECTRONIC SEMICONDUCTOR COMPONENT - An optoelectronic semiconductor component includes an optoelectronic semiconductor chip having a first surface. The semiconductor chip is embedded in a mold body. The first surface is elevated with respect to a top side of the mold body. A reflective layer is arranged on the top side of the mold body. | 2015-07-09 |
20150194584 | OPTICAL SEMICONDUCTOR DEVICE PRODUCTION METHOD AND OPTICAL SEMICONDUCTOR DEVICE - There is provided a production method for an optical semiconductor device including a substrate having a silver plating layer formed on a surface and a light emitting diode bonded to the silver plating layer. The production method includes a film formation step of forming a clay film covering the silver plating layer and a connection step of electrically connecting the light emitting diode and the silver plating layer covered with the clay film by wire bonding, after the film formation step. | 2015-07-09 |
20150194585 | LIGHT EMITTING DEVICE PACKAGE AND MANUFACTURING METHOD THEREOF - Provided are a light emitting device package usable as a display or lighting device, and a method of manufacturing the same. The method may include a raw plate preparing step for preparing a raw plate formed of a metallic material, a raw plate shaping step for shaping the raw plate into a substrate strip, a surface-treating step for surface-treating the substrate strip, an insulating layer forming step for forming an insulating layer on the surface-treated substrate strip, an electrode layer forming step for forming a first electrode layer and a second electrode layer separated by an electrode separating line, on the insulating layer formed on a die of the substrate strip, a light emitting device mounting step for mounting a light emitting device on the first and second electrode layers, and a bridge cutting step for cutting a cutting line of the first bridge and a cutting line of the second bridge to individualize the light emitting device and the die of the substrate strip into the light emitting device package. | 2015-07-09 |
20150194586 | LIGHT-EMITTING DEVICE HAVING A PLURALITY OF CONTACT PARTS - A light-emitting device is disclosed. The light-emitting device comprises a supportive substrate; a first light-emitting element and a second light-emitting element on the supportive substrate, wherein the first light-emitting element comprises a transparent layer on the supportive substrate, a first light-emitting stacked layer on the transparent layer, and a plurality of contact parts between the transparent layer and the first light-emitting stacked layer; and the second light-emitting element comprises an electrode and a second light-emitting stacked layer between the electrode and the supportive substrate; and a metal line on the supportive substrate and electrically connecting the electrode and one of the contact parts. | 2015-07-09 |
20150194587 | THERMOELECTRIC CONVERSION ELEMENT AND MANUFACTURING METHOD FOR SAME - A thermoelectric conversion element includes a thermoelectric conversion sheet possessing flexibility. The thermoelectric conversion sheet includes a magnetic layer, an electricity-generating layer that is formed on the magnetic layer so as to contact with the magnetic layer and that is formed of a material exhibiting spin orbit coupling, and a first electrode and a second electrode formed on the electricity-generating layer so as to contact with the electricity-generating layer. The first electrode and the second electrode extend in a longitudinal direction of the thermoelectric conversion sheet, and are separated from each other in a first direction perpendicular to the longitudinal direction. | 2015-07-09 |
20150194588 | THERMOELECTRIC GENERATOR UNIT AND THERMOELECTRIC GENERATOR SYSTEM - An exemplary thermoelectric generator unit according to the present disclosure includes a plurality of tubular thermoelectric generators. Each generator generates electromotive force in an axial direction based on a difference in temperature between its inner and outer peripheral surfaces. The unit further includes a container housing the generators inside and a plurality of electrically conductive members providing electrical interconnection among the generators. The container has fluid inlet and outlet ports through which a fluid flows inside the container, and a plurality of openings into which the respective generators are inserted. In one implementation, the unit includes a baffle, which is provided between the fluid inlet port and the generators and changes the flow direction of the fluid that has flowed into the container through the fluid inlet port. | 2015-07-09 |
20150194589 | THERMOELECTRIC MODULE AND HEAT CONVERSION DEVICE USING THE SAME - Provided is a thermoelectric module capable of preventing the leakage of a current generated from a connection portion upon connecting a thermoelectric semiconductor element to an electrode by forming an insulating layer having a low heat conductivity on an external surface of the thermoelectric semiconductor element and improving performance of the thermoelectric element by controlling a heat transfer phenomenon from a heating part to a cooling part. | 2015-07-09 |
20150194590 | SYSTEMS AND METHODS FOR REDUCING CURRENT AND INCREASING VOLTAGE IN THERMOELECTRIC SYSTEMS - In certain embodiments, a thermoelectric assembly and method is provided that can be configured to be in thermal communication with a generally tubular first fluid conduit configured to allow a first fluid to flow through the first fluid conduit along a first direction. The thermoelectric assembly can extend at least partially around a perimeter of the first fluid conduit. The thermoelectric assembly can include a plurality of thermoelectric sub-assemblies aligned with one another along the perimeter of the first fluid conduit. Each thermoelectric sub-assembly can include a plurality of thermoelectric elements in parallel electrical communication with one another. Each thermoelectric sub-assembly can also include at least one shunt comprising a first portion and a second portion. The first portion can be in thermal communication with and mechanically coupled to the plurality of thermoelectric elements and be in thermal communication with at least one second fluid conduit. The second portion can be in thermal communication with and mechanically coupled to the first portion and have a curved surface in thermal communication with the first fluid conduit. Each thermoelectric sub-assembly can include a plurality of electrically insulating elements to prevent current flow in a plane perpendicular to the first direction between adjacent thermoelectric sub-assemblies. | 2015-07-09 |
20150194591 | PIEZOELECTRIC DEVICE AND METHOD FOR USING SAME - A piezoelectric device, which has bipolar polarization-electric field (Pr-E) hysteresis characteristics of a piezoelectric material asymmetrically biased, when a first and second coercive electric fields respectively having smaller and larger absolute values are defined as Ec1 and Ec2 and a bias ratio of the coercive electric field is defined as [(Ec2+Ec1)/(Ec2−Ec1)]×100[%], includes a piezoelectric element unit including a piezoelectric body film whose bias ratio is | 2015-07-09 |
20150194592 | PIEZOELECTRIC ELEMENT, PIEZOELECTRIC ACTUATOR, PIEZOELECTRIC SENSOR, HARD DISK DRIVE, AND INKJET PRINTER DEVICE - An object is to reduce the leakage current of a piezoelectric element including a potassium-sodium niobate thin film, enhance the reliability of the piezoelectric element and, in addition, enhance the withstand voltage by including a pair of electrodes and a piezoelectric layer sandwiched between the above-described pair of electrode layers, wherein the above-described piezoelectric layer is provided with at least one layer each of first piezoelectric layer which is a potassium-sodium niobate thin film substantially not containing Mn (manganese) and second piezoelectric layer which is a potassium-sodium niobate thin film containing Mn. | 2015-07-09 |
20150194593 | PIEZOELECTRIC VIBRATION MODULE - Embodiments of the invention provide a piezoelectric vibration module, including a vibration plate mounted with a piezoelectric element, which generates a vibration force in a vertical direction by being repeatedly expanded and contracted depending on external power applied thereto, and a lower case coupled with both ends of the vibration plate so as to be spaced apart from the vibration plate. The piezoelectric vibration module further includes a bar-shaped weight body increasing the vibration force of the piezoelectric element, and an elastic member interposed between the vibration plate and the weight body. | 2015-07-09 |
20150194594 | PIEZOELECTRIC MATERIAL AND PIEZOELECTRIC ELEMENT USING THE SAME, AND ELECTRONIC APPARATUS USING THE PIEZOELECTRONIC ELEMENT - Provided is a lead-free piezoelectric material having a high Curie temperature, a satisfactory mechanical quality factor, and a satisfactory Young's modulus, and a piezoelectric element and a multilayered piezoelectric element each using the piezoelectric material. The piezoelectric material contains 0.04 mol % or more to 2.00 mol % or less of Cu with respect to 1 mol of a perovskite-type metal oxide represented by the following general formula: (K | 2015-07-09 |
20150194595 | MAGNETIC MEMORY DEVICES - A magnetic memory device may include a lower electrode on a substrate, a memory element on the lower electrode, an upper electrode on the memory element, and a protection spacer enclosing a portion of a side surface of the lower electrode and protruding laterally from the side surface of the lower electrode. The protection spacer may have a bottom surface that is positioned at a level higher than that of a bottom surface of the lower electrode. | 2015-07-09 |
20150194596 | PERPENDICULAR MTJ STACKS WITH MAGNETIC ANISOTROPHY ENHANCING LAYER AND CRYSTALLIZATION BARRIER LAYER - Magnetic tunnel junctions (MTJ) suitable for spin transfer torque memory (STTM) devices, include perpendicular magnetic layers and one or more anisotropy enhancing layer(s) separated from a free magnetic layer by a crystallization barrier layer. In embodiments, an anisotropy enhancing layer improves perpendicular orientation of the free magnetic layer while the crystallization barrier improves tunnel magnetoresistance (TMR) ratio with better alignment of crystalline texture of the free magnetic layer with that of a tunneling layer. | 2015-07-09 |
20150194597 | Magnetoresistance Element With Improved Response to Magnetic Fields - A magnetoresistance element has a double pinned arrangement with two antiferromagnetic pinning layers, two pinned layers, and a free layer. A spacer layer between one of the two antiferromagnetic pinning layers and the free layer has a material selected to allow a controllable partial pinning by the one of the two antiferromagnetic pinning layers. | 2015-07-09 |
20150194598 | PERPENDICULAR STTMRAM DEVICE WITH BALANCED REFERENCE LAYER - A spin transfer torque magnetic random access memory (STTMRAM) element comprises a reference layer, which can be a single layer structure or a synthetic multi-layer structure, formed on a substrate, with a fixed perpendicular magnetic component. A junction layer is formed on top of the reference layer and a free layer is formed on top of the junction layer with a perpendicular magnetic orientation, at substantially its center of the free layer and switchable. A tuning layer is formed on top of the free layer and a fixed layer is formed on top of the tuning layer, the fixed layer has a fixed perpendicular magnetic component opposite to that of the reference layer. The magnetic orientation of the free layer switches relative to that of the reference layer. The perpendicular magnetic components of the fixed layer and the reference layer substantially cancel each other and the free layer has an in-plane edge magnetization field. | 2015-07-09 |
20150194599 | METHODS OF MANUFACTURING SEMICONDUCTOR DEVICES USING CAVITIES TO DISTRIBUTE CONDUCTIVE PATTERNING RESIDUE - Methods of manufacturing a semiconductor device include forming a conductive layer on a substrate, forming an air gap or other cavity between the conductive layer and the substrate, and patterning the conductive layer to expose the air gap. The methods may further include forming conductive pillars between the substrate and the conductive layer. The air gap may be positioned between the conductive pillars. | 2015-07-09 |
20150194600 | METHOD FOR FORMING A MAGNETIC SENSOR - A method for forming a magnetic sensor includes: forming a hard mask film on a tantalum nitride film; forming a patterned photoresist layer on the hard mask film; implementing an isotropic dry etching process to the hard mask film by taking the photoresist layer as a mask, so as to form a hard mask layer; and implementing an etching process to the tantalum nitride film and the magnetic film by taking the hard mask layer as a mask, so as to form a tantalum nitride layer and a magnetic resistive layer. As an isotropic dry etching process is implemented to the hard mask film, the hard mask film located which is above the other sidewalls and is not used for forming the magnetic sensor can be effectively removed. In addition, shadow effect will not take place, thus dimension of the magnetic sensor formed is able to be easily controlled. | 2015-07-09 |
20150194601 | INTERFACIAL CAP FOR ELECTRODE CONTACTS IN MEMORY CELL ARRAYS - Exemplary embodiments of the present invention are directed towards a method for fabricated a memory cell comprising depositing a material to form an interface cap above a bulk conductive plug and below active cell materials in the memory cell. | 2015-07-09 |
20150194602 | RRAM RETENTION BY DEPOSITING Ti CAPPING LAYER BEFORE HK HfO - The present disclosure relates to a resistance random access memory (RRAM) device architecture where a Ti metal capping layer is deposited before the deposition of the HK HfO resistance switching layer. Here, the capping layer is below the HK HfO layer, and hence no damage will occur during the top RRAM electrode etching. The outer sidewalls of the capping layer are substantially aligned with the sidewalls of the HfO layer and hence any damage that may occur during future etching steps will happen at the outer side walls of the capping layer that are positioned away from the oxygen vacancy filament (conductive filament) in the HK HfO layer. Thus the architecture in the present disclosure, improves data retention. | 2015-07-09 |
20150194603 | METHODS OF FABRICATING MEMORY DEVICES - Provided is a method of fabricating a memory device. The method includes defining a cell region and a driving region on a substrate, forming driving transistors on the driving region, forming a first bit line in the cell region, a first unit memory cell disposed on an upper surface of the first bit line, a word line disposed on upper surfaces of the first unit memory cells, and a second unit memory cell disposed on an upper surface of the word line, forming a planarization layer configured to fill between the second unit memory cells, and including second bit line grooves on the upper surfaces of the first bit lines, bit line contact vias in the second bit line grooves, floating electrode grooves on upper surfaces of ends of the word lines, and a first floating contact via and a second floating contact via in each of the floating electrode grooves, simultaneously forming second bit lines in the second bit line grooves, bit line contact electrodes in the bit line contact vias, floating electrodes in the floating electrode grooves, first floating contact electrodes in the first floating contact vias, and second floating contact electrodes in the second floating contact vias. | 2015-07-09 |
20150194604 | VAPOR DEPOSITION APPARATUS, VAPOR DEPOSITION METHOD AND METHOD FOR MANUFACTURING ORGANIC LIGHT-EMITTING DISPLAY APPARATUS - A vapor deposition apparatus for depositing a thin layer on a substrate, the vapor deposition apparatus includes a plurality of modules arranged to respectively face different regions of the substrate, each of the plurality of modules including a body unit, and a nozzle unit disposed on one of surfaces of the body unit facing the substrate, where the plurality of modules is configured to individually perform deposition processes on different regions of the substrate, respectively. | 2015-07-09 |
20150194605 | METHODS FOR FORMING ONE OR MORE CRYSTALLINE LAYERS ON A SUBSTRATE - A method for forming a crystalline film of a material is provided, including depositing a solution, having a base critical speed separating deposition regimes, on a substrate such that a crystalline film is formed. The solution is deposited at a speed greater than the base critical speed and the crystalline film has a crystal structure characteristic of a crystalline film formed from the solution at a speed less than the base critical speed. In another aspect, a crystalline film is formed on a base film by depositing a solution on the base film. The solution has a critical speed between deposition regimes, and the solution is deposited at a speed greater than or equal to the critical speed, such that a crystalline film is formed on the base film. A device is disclosed, the device having a film made from any of the disclosed methods and an electrical lead. | 2015-07-09 |
20150194606 | HIGH MOBILITY POLYMER THIN-FILM TRANSISTORS WITH CAPILLARITY-MEDIATED SELF-ASSEMBLY - Embodiments of the invention include methods and materials for preparing organic semiconducting layers, for example one used in an organic semiconductor device including a substrate with a nanostructured surface and a polymeric semiconductor film overlying the nanostructured surface. Aspects of the invention use capillary action to modulate polymer chain self-assembly on a surface and unidirectional alignment at a critical buried interface where charge carriers migrate between a dielectric and the polymer. By controlling the properties of the surfaces upon which polymers are disposed, artisans can enhance the transistor saturated mobilities of conjugated polymers. | 2015-07-09 |
20150194607 | PHOTOVOLTAIC ELEMENT - A photovoltaic element includes at least an anode, a photoelectric conversion layer, an electron extraction layer and a cathode in this order, wherein the electron extraction layer contains a compound represented by formula (1): | 2015-07-09 |
20150194608 | BUILDING BLOCK FOR LOW BANDGAP CONJUGATED POLYMERS - A twisted but conjugated building block for low bandgap conjugated polymers. An organic device comprising a (E)-8,8′-biindeno[2,1-b]thiophenylidene (tBTP) based polymer. | 2015-07-09 |
20150194609 | DIBENZOXANTHENE COMPOUND, ORGANIC LIGHT-EMITTING DEVICE, DISPLAY, IMAGE INFORMATION PROCESSOR, AND IMAGE-FORMING APPARATUS - Provided is a novel compound having a high lowest triplet excited level (T1 level), a narrow bandgap, and a shallow highest occupied molecular orbital (HOMO) level. A dibenzoxanthene compound is represented by formula [1] described in Claim | 2015-07-09 |
20150194610 | CONDENSED CYCLIC COMPOUND AND ORGANIC LIGHT-EMITTING DEVICE INCLUDING THE SAME - A condensed cyclic compound represented by one of Formulae 1A to 1D: | 2015-07-09 |
20150194611 | AIR-STABLE, BLUE LIGHT EMITTING CHEMICAL COMPOUNDS - We report the synthesis and characterization of four novel CCC—NHC pincer platinum(II) and palladium(II) complexes, which adopt a distorted square planar configuration. These complexes emit bright blue light in the solid state under UV irradiation with emissions that are stable in ambient atmosphere (O | 2015-07-09 |
20150194612 | ORGANIC ELECTROLUMINESCENT MATERIALS AND DEVICES - A compound comprising a ligand L | 2015-07-09 |
20150194613 | ORGANIC LIGHT-EMITTING LAYER MATERIAL, COATING LIQUID FOR USE IN FORMING ORGANIC LIGHT-EMITTING LAYER WITH ORGANIC MATERIAL, ORGANIC LIGHT-EMITTING DEVICE PRODUCED WITH COATING LIQUID, LIGHT SOURCE APPARATUS WITH ORGANIC LIGHT-EMITTING DEVICE, AND METHODS FOR MANUFACTURE THEREOF - An organic light-emitting device includes an upper electrode, a lower electrode, and a light-emitting layer disposed between the upper and lower electrodes, wherein the light-emitting layer includes a host and a first dopant. The first dopant includes a pyridyltriazole derivative as an auxiliary ligand, the auxiliary ligand of the first dopant contains a functional group R1 or a functional group R2, and the first dopant is displaced toward a surface of the light emitting layer by the action of at least one of the functional groups R1 and R2, wherein the surface is on a side where the upper electrode is present, and also directed to a coating liquid for use in forming the light-emitting layer with an organic material. An organic light-emitting device is produced with the coating liquid, a light source apparatus includes the organic light-emitting device, and methods for manufacture thereof are disclosed. | 2015-07-09 |
20150194614 | ORGANOMETALLIC COMPOUND AND ORGANIC LIGHT-EMITTING DEVICE INCLUDING THE SAME - An organometallic compound represented by Formula 1: | 2015-07-09 |
20150194615 | ORGANIC ELECTROLUMINESCENT MATERIALS AND DEVICES - A novel Pt tetradentate complexes having Pt—O bond is disclosed. These complexes are useful as emitters in phosphorescent OLEDs. | 2015-07-09 |
20150194616 | Tetradentate Platinum And Palladium Complex Emitters Containing Phenyl-Pyrazole And Its Analogues - A phosphorescent emitter or delayed fluorescent and phosphorescent emitters represented by Formula 1 or Formula II, where M is platiunum or palladium. | 2015-07-09 |
20150194617 | COPPER COMPLEXES FOR OPTOELECTRONIC APPLICATIONS - The invention relates to an optoelectronic component having a copper(I) complex of the formula: | 2015-07-09 |
20150194618 | FLEXIBLE ORGANIC LIGHT EMITTING DIODE DISPLAY DEVICE AND MANUFACTURING METHOD THEREOF - A flexible organic light emitting diode display device, comprising: a first flexible substrate and a second flexible substrate opposite to the first flexible substrate wherein on the first flexible substrate, there are formed in sequence a thin film transistor, a first passivation layer, a first electrode, an organic electroluminescence layer, a second electrode, a stress absorption layer is disposed between the second electrode and the second flexible substrate, and material for the stress absorption layer is a resin material. The stress absorption layer of the flexible organic light emitting diode display device can absorb a stress occurring as it is bent, so as to prevent electrodes from being broken due to the action of the stress and affecting the display quality. There is further disclosed a manufacturing method of the flexible organic light emitting diode display device. | 2015-07-09 |
20150194619 | SEMICONDUCTOR DEVICE WITH BALLISTIC GATE LENGTH STRUCTURE - Embodiments of the invention include a method of fabrication and a semiconductor structure. The method of fabrication includes depositing a first dielectric material on a substrate, and forming a bottom gate comprising filling a first opening in the first dielectric layer with a first conductive material. Next, depositing a second dielectric material, and forming a trench in the second dielectric material down to the first conductive material. Next, depositing a second conductive material on the sidewall of the trench forming an electrical connection between the first conductive material and the second conductive material, depositing a third dielectric material in the trench, and removing excess material not in the trench. Next, depositing a gate dielectric layer, and forming a channel layer of carbon nanotubes on the gate dielectric layer. Lastly, depositing a third conductive material on the channel layer forming source and drain terminals. | 2015-07-09 |
20150194620 | Surface Treatment for a Layer Made From a Fluorinated Material to Make it Hydrophilic - The invention concerns a treatment method to make a surface of a layer made from a fluorinated material hydrophilic, a method for depositing a layer made from a metal or semi-conductive layer on the surface of a layer made from a fluorinated material, and a device comprising a layer made from a fluorinated material of which one surface has been treated by the treatment method of the invention, and a layer made from a metal material. The method of the invention comprises a step a) of depositing a layer of an oxo-hydroxide of an element from the alkaline earth metal group or from group II or III of the periodic table or of a rare earth or of a mixture of same, onto said surface. The method of the invention is applicable in the field of electronics, in particular. | 2015-07-09 |
20150194621 | BISCARBAZOLE DERIVATIVE HOST MATERIALS FOR OLED EMISSIVE REGION - An organic electroluminescence device utilizes a novel combination of one or more biscarbazole derivative compounds as the phosphorescent host material in combination with an organometallic phosphorescent material as a dopant in the light emitting region of the device, where the biscarbazole derivative compounds are represented by a formula (1A) or (2A) below: (1A), (2A) where A | 2015-07-09 |
20150194622 | BISCARBAZOLE DERIVATIVE HOST MATERIALS AND RED EMITTER FOR OLED EMISSIVE REGION - The organic electroluminescence device utilizes a novel combination of a biscarbazole derivative compound as a phospherescent host materials and an orgaphosphorescent material as a red phosphorescent dopant material in the light emitting region of the device, where the biscarbazole derivative compound is represented by a formula (1); wherein the red phosphorescent dopant material is a phosphorescent organometallic complex having a substituted chemical structure represented by one of the partial chemical structures represented by a formulas (D1), (D2) and (D3). | 2015-07-09 |
20150194623 | ORGANIC LIGHT-EMITTING DEVICE AND METHOD OF MANUFACTURING THE SAME - An organic light-emitting device and a method of manufacturing the same, including a substrate; a plurality of first electrodes on the substrate in a first to third light-emitting region; a first common layer on the substrate, the first common layer covering the plurality of first electrodes; a first light-emitting layer in the first light-emitting region and on the first common layer; a second light-emitting layer in the second light-emitting region and on the first common layer; a third light-emitting layer in the third light-emitting region and on the first common layer; a second common layer that is commonly disposed on the first light-emitting layer, the second light-emitting layer, and the third light-emitting layer; a second electrode on the second common layer; and an auxiliary layer that is commonly disposed only in the first light-emitting region and the second light-emitting region between the first common layer and the second common layer. | 2015-07-09 |
20150194624 | ORGANIC LIGHT-EMITTING DEVICE - An organic light emitting device includes a first electrode, a second electrode, and two or more organic material layers provided between the first electrode and the second electrode. The organic material layer includes a light emitting layer, and a mixed layer including one or more hole transfer materials and one or more electron transfer materials. | 2015-07-09 |
20150194625 | ORGANIC LIGHT-EMITTING DIODE (OLED) DISPLAY AND FABRICATION METHOD FOR THE SAME - An organic light-emitting diode (OLED) display and fabrication method for the same are disclosed. In one aspect, the OLED display includes a first substrate including a display area and a non-display area surrounding the display area, wherein the non-display area includes first and second non-display areas and a second substrate formed over the first substrate. The OLED display also includes a dummy electrode formed in the non-display area, an insulating layer formed over the dummy electrode, and a sealant substantially sealing the first and second substrates and formed over the insulating layer in the non-display area. The insulating layer has at least one first through-hole and at least one second through-hole respectively formed in the first and second non-display areas. The sealant is at least partially filled in the first and second through-holes so as to directly contact the dummy electrode. | 2015-07-09 |
20150194626 | DISPLAY DEVICE - In a display device according to the present disclosure, leader lines are led out from a display region to a leader region adjacent to the display region. In the leader region, metal portions are disposed between adjacent two of the plurality of leader lines with gaps. The gaps are formed between each of the metal portions and each of the adjacent two of the plurality of leader lines. A sealing layer covers display elements in the display region and covers the leader lines in a first sealing region of the leader region adjacent to the display region. A part of the sealing layer fills the gaps and adheres to each of the metal portions in the first sealing region. | 2015-07-09 |
20150194627 | GLASS PACKAGING STRUCTURE AND GLASS PACKAGING METHOD OF UTILIZING THE SAME - The present invention provides a glass packaging structure, comprising an active glass substrate and a packaging glass substrate. An active area is formed upon the active glass substrate. Glass packaging lines are formed on a surface of the packaging glass substrate and the glass packaging lines protruding from the packaging glass substrate. The packaging glass substrate entirely overlapping upon the active glass substrate and then the glass packaging lines are irradiated by a laser to couple the packaging glass substrate and the active glass substrate. | 2015-07-09 |
20150194628 | ORGANIC LIGHT-EMITTING DISPLAY APPARATUS - An organic light-emitting display apparatus includes: a first substrate; an insulating layer on the first substrate; a signal wiring on the insulating layer; an organic light-emitting device on the first substrate, the organic light-emitting device defining an active area and including a first electrode, a second electrode, and an intermediate layer between the first and second electrodes; a passivation layer on the insulating layer; and a metal layer on the passivation layer at an outer region adjacent to the active area, separated from the first electrode, and contacting the second electrode and the signal wiring, wherein a first opening is in the passivation layer at the outer region, and the metal layer contacts the insulating layer at the first opening. | 2015-07-09 |
20150194629 | ORGANIC LIGHT-EMITTING DIODE (OLED) DISPLAY PANEL, PIXEL DEFINE LAYER (PDL) AND PREPARATION METHOD THEREOF - A pixel define layer (PDL) of an organic light-emitting diode (OLED) display panel, which comprises a first PDL ( | 2015-07-09 |
20150194630 | DISPLAY DEVICE AND METHOD OF MANUFACTURING THE SAME - A display device and method of manufacturing the same are disclosed. In one aspect, the display device includes a substrate, at least one wire formed over the substrate and configured to transfer a signal for displaying an image, and an encapsulating unit formed over the wire and comprising a base layer and a barrier layer. The barrier layer is interposed between the wire and the base layer and includes a lower surface having a shape that corresponds to the shape of the wire and an upper surface opposing the lower surface. The base layer has a lower surface having a shape that corresponds to the shape of the barrier layer. | 2015-07-09 |