29th week of 2011 patent applcation highlights part 14 |
Patent application number | Title | Published |
20110175033 | CRYSTALLIZATION MEDIA - A set of crystallization solutions includes a plurality of crystallization solutions of Crystallization Solution Set I, a plurality of crystallization solutions of Crystallization Solution Set II or a plurality of crystallization solutions of Crystallization Solution Set III. | 2011-07-21 |
20110175034 | ORGANIC SOLVENT DISPERSIBLE CONDUCTIVE POLYMER AND METHOD FOR MANUFACTURE THEREOF - Disclosed is a conductive polymer which is easily dispersed in an organic solvent. A method of preparing the conductive polymer adapted to be dispersed in an organic solvent is also provided, which includes chemically polymerizing a monomer using as a dopant anion a phosphate-based compound having solubility in an organic solvent. The conductive polymer capable of being dispersed in various organic solvents can be obtained through a simple preparation process, and thus can be utilized in the fields of applied materials in which the use of conventional water-dispersible conductive polymers is limited. | 2011-07-21 |
20110175035 | EMISSIVE POLYMERS AND DEVICES INCORPORATING THESE POLYMERS - The present invention relates to a class of luminescent and conductive polymer compositions having chromophores, and particularly solid films of these compositions exhibiting increased luminescent lifetimes, quantum yields and amplified emissions. These desirable properties can be provided through polymers having rigid groups designed to prevent polymer reorganization, aggregation or π-stacking upon solidification. These polymers can also display an unusually high stability with respect to solvent and heat exposures. The invention also relates to a sensor and a method for sensing an analyte through the luminescent and conductive properties of these polymers. Analytes can be sensed by activation of a chromophore at a polymer surface. Analytes include aromatics, phosphate ester groups and in particular explosives and chemical warfare agents in a gaseous state. The present invention also relates to devices and methods for amplifying emissions by incorporating a polymer having an energy migration pathway and/or providing the polymer as a block co-polymer or as a multi-layer. | 2011-07-21 |
20110175036 | CONDUCTIVE POLYMER SOLUTION, CONDUCTIVE COATING FILM AND INPUT DEVICE - The present invention provides a conductive polymer solution capable of forming a conductive coating film having both superior preservation stability and water resistance. The conductive polymer solution of the present invention includes a π-conjugated conductive polymer, a polyanion, a compound having oxetane ring and a solvent; wherein, the amount of the compound having oxetane ring is within the range of 1 to 500% by mass based on a value of 100% by mass for the total amount of then-conjugated conductive polymer and the polyanion. | 2011-07-21 |
20110175037 | BURNED PLANT MATERIAL AND ELECTROMAGNETIC SHIELDING MEMBER - Provided is an electrically conductive composition capable of making specific volume resistivity control easier, which can be produced by using a carbonaceous material comprising a burned plant material alone. | 2011-07-21 |
20110175038 | COATED CARBON NANOFLAKES - Compositions of carbon nanoflakes are coated with a low Z compound, where an effective electron emission of the carbon nanoflakes coated with the low Z compound is improved compared to an effective electron emission of the same carbon nanoflakes that are not coated with the low Z compound or of the low Z compound that is not coated onto the carbon nanoflakes. Compositions of chromium oxide and molybdenum carbide-coated carbon nanoflakes are also described, as well as applications of these compositions. Carbon nanoflakes are formed and a low Z compound coating, such as a chromium oxide or molybdenum carbide coating, is formed on the surfaces of carbon nanoflakes. The coated carbon nanoflakes have excellent field emission properties. | 2011-07-21 |
20110175039 | HIGH WORK FUNCTION TRANSPARENT CONDUCTORS - There is provided a transparent conductor including conductive nanoparticles and at least one of (a) a fluorinated acid polymer and (b) a semiconductive polymer doped with a fluorinated acid polymer. The nanoparticles are carbon nanoparticles, metal nanoparticles, or combinations thereof. The carbon and metal nanoparticles are selected from nanotubes, fullerenes, and nanofibers. The acid polymers are fluorinated or highly fluorinated and have acidic groups including carboxylic acid groups, sulfonic acid groups, sulfonimide groups, phosphoric acid groups, phosphonic acid groups, and combinations thereof. The semiconductive polymers comprise homopolymers and copolymers derived from monomers selected from substituted and unsubstituted thiophenes, pyrroles, anilines, and cyclic heteroaromatics, and combinations of those. The compositions may be used in organic electronic devices (OLEDs). | 2011-07-21 |
20110175040 | METHOD FOR PRODUCING METAL PARTICLE DISPRESION, CONDUCTIVE INK USING METAL PARTICLE DISPERSION PRODUCED BY SUCH METHOD, AND CONDUCTIVE COATING FILM - Disclosed is a method for producing a metal particle dispersion wherein a metal compound is reduced by using carbodihydrazide represented by the formula (1) below or a polybasic acid polyhydrazide represented by the formula (2) below (wherein R represents an n-valent polybasic acid residue) in a liquid medium. By reducing the metal compound in the presence of a compound having a function preventing discoloration of the metal, there can be obtained a metal particle dispersion having excellent discoloration preventing properties. Metal particles produced by such methods have a uniform particle diameter and are excellent in dispersion stability. By using a conductive resin composition or conductive ink containing a metal particle dispersion obtained by such production methods, there can be formed a conductive coating film, such as a conductive circuit or an electromagnetic layer, having good characteristics. | 2011-07-21 |
20110175041 | MANUFACTURING METHOD OF ITO PARTICLES, AND ITO POWDER, COATING MATERIAL FOR TRANSPARENT ELECTROCONDUCTIVE MATERIAL AND TRANSPARENT ELECTROCONDUCTIVE FILM - ITO powder and a producing method of the same, capable of producing ITO particles without using a solvent with a high boiling point by a simple treatment method without a heating process in an atmosphere which causes sintering. Also, an ITO powder is provided, which is suitable for a coating material for a transparent electroconductive material, the ITO powder being produced by a first step of dissolving salt containing indium and salt containing tin into an organic solvent, then adding to this organic solvent, an organic solvent containing a basic precipitant, to manufacture a precursor; and a second step of applying heat treatment to the precursor in a pressurizing vessel, to thereby generate ITO particles. | 2011-07-21 |
20110175042 | HAND TOOL WITH AN EXTENDABLE PLUNGER - A hand tool having an elongated plunger assembly that is rotatably and movably disposed in a socket. The plunger assembly can be rotated between a first orientation and a second orientation as well as being moved between a first, withdrawn position and a second, extended position. The plunger assembly also has an upper notch and a lower notch on a front side and at least one generally flat lateral side. A fixed latch member extends across a portion of the socket and defines a narrow passage within the socket. The hand tool, preferably, includes a compression spring biasing the plunger assembly toward the extended position. | 2011-07-21 |
20110175043 | High speed winch - Winch for high speed pulling of cable consisting of a winch drum driven by a motor equipped with stator winding for creation of magnetic field with changing rotational direction or stand still and hydraulic damper disk attached to the cable preventing transient oscillations. | 2011-07-21 |
20110175044 | Carrying Rack of an Engine - A carrying rack of an engine includes a main hydraulic cylinder to move a swing arm upward and downward, and the swing arm including a seat disposed on a front end thereof, the seat including a support post axially mounted therein, wherein the support post includes a fixed peg axially inserted to a U-shaped receiving member to form a L shape, and the receiving member includes a pillar axially fixed on a bottom end thereof by using a retaining bolt, the support post also includes a rotating holder axially connected to the seat; an auxiliary hydraulic cylinder is axially disposed in an inner side of the swing arm by using its distal end so that a hydraulic lifter axially couples with the rotating holder via a connecting rod, and the swing arm includes a shaft mounted thereon to contact with the connecting rod. | 2011-07-21 |
20110175045 | FENCING SYSTEM AND POST INSERT FOR USE THEREWITH - A fencing system typically includes hollow posts with rail structures extending therebetween. A post mount assembly is configured to mount on a foundation and is slidably received within each hollow post to provide suitable support for the posts. In one embodiment, each post mount assembly includes a wedge which is wedged against the post mount assembly typically to force the post mount assembly against an inner surface of the post. The post mount assembly may include a post mount and a post insert which is vertically adjustable relative to the post mount and against which the wedge is wedged. | 2011-07-21 |
20110175046 | Gate having four pins and stairway post adapter - A gate apparatus that includes a gate, an elongate member or gate base for the ends of the gate, and a stairway post adapter such that a wooden stairway post can serve as a base for a gate without harming the wood of the stairway post. The stairway post adapter includes a vertical or longitudinally running channel for receiving the gate base, a horizontally or laterally extending channel for receiving a strap, and a recess or receptor or face for confronting a section of a stairway post. The gate base includes an upper and lower eyelet. Each of the ends of the gate includes upper and lower pins for engaging the upper and lower eyelets of the gate bases. On the hinge side of the gate, the pins are relatively long and remain in the eyelets as the gate is lifted and swung. On the latch side of the gate, the pins are relatively short such that that latch side of the gate can be lifted and disengaged from the eyelets and then swung open. The gate is extendable and retractable in length, and is reversible. | 2011-07-21 |
20110175047 | ELECTRIC FIELD INDUCED PHASE TRANSITIONS AND DYNAMIC TUNING OF THE PROPERTIES OF OXIDE STRUCTURES - Phase transitions (such as metal-insulator transitions) are induced in oxide structures (such as vanadium oxide thin films) by applying an electric field. The electric field-induced phase transitions are achieved in VO | 2011-07-21 |
20110175048 | NONVOLATILE MEMORY DEVICE AND METHOD FOR MANUFACTURING SAME - According to one embodiment, a nonvolatile memory device includes first and second conductive layers, a resistance change layer, and a rectifying element. The first conductive layer has first and second major surfaces. The second conductive layer has third and fourth major surfaces, a side face, and a corner part. The third major surface faces the first major surface and includes a plane parallel to the first major face and is provided between the fourth and first major surfaces. The corner part is provided between the third major surface and the side face. The corner part has a curvature higher than that of the third major surface. The resistance change layer is provided between the first and second conductive layers. The rectifying element faces the second major surface of the first conductive layer. An area of the third major surface is smaller than that the second major surface. | 2011-07-21 |
20110175049 | MEMORY COMPONENT AND MEMORY DEVICE - A memory component includes: a first electrode; a memory layer; and a second electrode in this order, wherein the memory layer includes a high resistance layer which includes tellurium (Te) as the chief component among anion components and is formed on the first electrode side; and an ion source layer which includes at least one kind of metal element and at least one kind of chalcogen element among tellurium (Te), sulfur (S) and selenium (Se) and is formed on the second electrode side. | 2011-07-21 |
20110175050 | Metal Oxide Resistance Based Semiconductor Memory Device With High Work Function Electrode - Various aspect are directed to a memory device or memory cell with a metal-oxide memory element arranged in electrical series along a current path between at least a first electrode, a metal-oxide memory element adjacent to the first electrode, and a second electrode. The first electrode comprises an electrode material having a first work function. The metal-oxide memory element comprises a metal-oxide material having a second work function. The first work function is greater than the second work function. Thermionic emission characterizes the current through this memory. | 2011-07-21 |
20110175051 | RESISTIVE MEMORY DEVICE AND METHOD FOR FABRICATING THE SAME - A resistive memory device includes a lower electrode formed on a substrate, a resistive layer formed on the lower electrode, and an upper electrode on the resistive layer, wherein a lower portion of the upper electrode is narrower than an upper portion of the upper electrode. | 2011-07-21 |
20110175052 | RESISTANCE-VARIABLE MEMORY DEVICE INCLUDING CARBIDE-BASED SOLID ELECTROLYTE MEMBRANE AND MANUFACTURING METHOD THEREOF - Disclosed are a resistance-variable memory device including a carbide-based solid electrolyte membrane that has stable memory at a high temperature and a manufacturing method thereof. The resistance-variable memory device includes: a lower electrode, the carbide-based solid electrolyte membrane arranged on the lower electrode, and an upper electrode arranged on the solid electrolyte membrane. In addition, the method for manufacturing the resistance-variable memory device comprises: a step for forming the lower electrode on a substrate, a step for forming the carbide-based solid electrolyte membrane on the lower electrode, and a step for forming the upper electrode on the solid electrolyte membrane. | 2011-07-21 |
20110175053 | NONVOLATILE MEMORY DEVICE AND METHOD FOR MANUFACTURING THE SAME - According to one embodiment, a nonvolatile memory device includes a substrate, first electrodes, a first and a second interelectrode insulating layer, second electrodes, a memory portion and a first protrusion. The first electrodes are provided on the substrate and extend in a first direction. The first interelectrode insulating layer is provided between the first electrodes. The second electrodes are opposed to the first electrodes and extend in a second direction crossing the first direction. The second interelectrode insulating layer is provided between the second electrodes. The memory portion is provided between the first electrode and the second electrode. The first protrusion is conductive and provided at least one of between the first electrode and the memory portion and between the first interelectrode insulating layer and the memory portion, and between the second electrode and the memory portion and between the second interelectrode insulating layer and the memory portion. | 2011-07-21 |
20110175054 | DEVICE CONTAINING LARGE-SIZED EMITTING COLLOIDAL NANOCRYSTALS - A device using a layer containing emitting semiconductor nanocrystals wherein each emitting nanocrystal includes a core structure wherein the cores have an aspect ratio less than 2:1 and a diameter greater than 10 nanometers and a protective shell surrounding the core | 2011-07-21 |
20110175055 | SOLID STATE LIGHTING DEVICE ON A CONDUCTIVE SUBSTRATE - A light emitting device includes a conductive substrate having a first substrate surface and comprising a conductive material, a protrusion formed on the conductive substrate, wherein the protrusion is defined in part by a first protrusion surface that is not parallel to the first substrate surface, and light emission layers disposed over the first protrusion surface. The light emission layers can emit light when an electric field is applied across the light emission layers. | 2011-07-21 |
20110175056 | LIGHT EMITTING DEVICE, METHOD OF MANUFACTURING THE SAME, LIGHT EMITTING DEVICE PACKAGE AND LIGHTING SYSTEM - A light emitting device according to the embodiment includes a conductive support substrate including plural pairs of first and second conductive layers; alight emitting structure layer including a first conductive semiconductor layer, a second conductive semiconductor layer, and an active layer between the first and second conductive semiconductor layers on the conductive support substrate; and an electrode on the light emitting structure layer. The first and second conductive layers are formed by using the same material. | 2011-07-21 |
20110175057 | SEMICONDUCTOR LIGHT-EMITTING DEVICE - The device including an active layer composed of AlGaInP, and an n-type clad layer and a p-type clad layer disposed so as to sandwich the active layer, the n-type clad layer and the p-type clad layer each having a bandgap greater than the bandgap of the active layer. The n-type clad layer includes a first n-type clad layer composed of AlGaInP and a second n-type clad layer composed of AlInP; and the second n-type clad layer has a thickness in the range from 40 nm to 200 nm. | 2011-07-21 |
20110175058 | LIGHT-EMITTING-DIODE CHIP COMPRISING A SEQUENCE OF GaN-BASED EPITAXIAL LAYERS WHICH EMIT RADIATION AND A METHOD FOR PRODUCING THE SAME - A light-emitting diode chip comprises a GaN-based, radiation-emitting epitaxial layer sequence, an active region, an n-doped layer and a p-doped layer. The p-doped layer is provided, on its main surface facing away from the active region, with a reflective contact metallization comprising a radioparent contact layer and a reflective layer. Methods for fabricating LED chips of this type by thin-film technology are provided, as are LED components containing such LED chips. | 2011-07-21 |
20110175059 | II-VI CORE-SHELL SEMICONDUCTOR NANOWIRES - A plurality of core-shell semiconductor nanowires each being fixed to a support includes II-VI materials for both the cores and the shells. Each nanowire terminates in a free end and a metal alloy nanoparticle is fixed to each nanowire at its free end. | 2011-07-21 |
20110175060 | GRAPHENE GROWN SUBSTRATE AND ELECTRONIC/PHOTONIC INTEGRATED CIRCUITS USING SAME - A substrate having a graphene film grown thereon according to the present invention includes: a base substrate; a patterned aluminum oxide film formed on the base substrate, the patterned aluminum oxide film having an average composition of Al | 2011-07-21 |
20110175061 | SYSTEMS AND METHODS FOR SUPERCONDUCTING INTEGRATED CIRCUITS - A superconducting integrated circuit may include a magnetic flux transformer having an inner inductive coupling element and an outer inductive coupling element that surrounds the inner inductive coupling element along at least a portion of a length thereof. The magnetic flux transformer may have a coaxial-like geometry such that a mutual inductance between the first inductive coupling element and the second inductive coupling element is sub-linearly proportional to a distance that separates the first inner inductive coupling element from the first outer inductive coupling element. At least one of the first inductive coupling element and the second inductive coupling element may be coupled to a superconducting programmable device, such as a superconducting qubit. | 2011-07-21 |
20110175062 | MICROWAVE READOUT FOR FLUX-BIASED QUBITS - A method for determining whether a quantum system comprising a superconducting qubit is occupying a first basis state or a second basis state once a measurement is performed is provided. The method, comprising: applying a signal having a frequency through a transmission line coupled to the superconducting qubit characterized by two distinct, separate, and stable states of differing resonance frequencies each corresponding to the occupation of the first or second basis state prior to measurement; and measuring at least one of an output power or phase at an output port of the transmission line, wherein the measured output power or phase is indicative of whether the superconducting qubit is occupying the first basis state or the second basis state. | 2011-07-21 |
20110175063 | SEMICONDUCTOR NANOWIRES HAVING MOBILITY-OPTIMIZED ORIENTATIONS - Prototype semiconductor structures each including a semiconductor link portion and two adjoined pad portions are formed by lithographic patterning of a semiconductor layer on a dielectric material layer. The sidewalls of the semiconductor link portions are oriented to maximize hole mobility for a first-type semiconductor structures, and to maximize electron mobility for a second-type semiconductor structures. Thinning by oxidation of the semiconductor structures reduces the width of the semiconductor link portions at different rates for different crystallographic orientations. The widths of the semiconductor link portions are predetermined so that the different amount of thinning on the sidewalls of the semiconductor link portions result in target sublithographic dimensions for the resulting semiconductor nanowires after thinning. By compensating for different thinning rates for different crystallographic surfaces, semiconductor nanowires having optimal sublithographic widths may be formed for different crystallographic orientations without excessive thinning or insufficient thinning. | 2011-07-21 |
20110175064 | Light emitting device and method of fabricating the same - A light emitting device may include a first electrode on a substrate, a first emission layer on the first electrode, a buffer layer on the first emission layer, a middle electrode on the buffer layer, a second emission layer on the middle electrode, and a second electrode on the second emission layer. The buffer layer may include a material selected from the group consisting of a metal oxide, a polyelectrolyte, and a combination thereof. The first emission layer, buffer layer, middle electrode, and second emission layer may be fabricated using a wet process. | 2011-07-21 |
20110175065 | PHOTOVOLTAIC DEVICE HAVING TRANSPARENT ELECTRODE FORMED WITH NANOPARTICLES - A photovoltaic device is disclosed that includes a transparent front electrode formed by the self-assembly of conductive nanoparticles from an emulsion coated onto a substrate and dried. The nanoparticles self-assemble into a network-like pattern of conductive traces that define randomly-shaped transparent cells. The cells may be filled with various transparent filler materials and additional layers may be present in the device in addition to conventional components. Processes for forming the transparent electrode are also disclosed. | 2011-07-21 |
20110175066 | ORGANIC LUMINESCENT MATERIALS, COATING SOLUTION USING SAME FOR ORGANIC EMITTING LAYER, ORGANIC LIGHT EMITTING DEVICE USING COATING SOLUTION AND LIGHT SOURCE DEVICE USING ORGANIC LIGHT EMITTING DEVICE - It is an object of the present invention to provide an organic light-emitting device which can emit white light by easily controlling dopant concentrations. The organic light-emitting device has a first electrode ( | 2011-07-21 |
20110175067 | ORGANIC LIGHT-EMITTING DIODE - According to one embodiment, there is provided an organic light-emitting diode including an anode and a cathode arranged apart from each other, an emissive layer arranged between the anode and the cathode, a hole injection layer arranged between the anode and the emissive layer and including a polyethylenedioxythiophene, and a hole-transport layer arranged between the hole injection layer and the emissive layer and including a hole-transport material. The emissive layer includes a cathode side first area including a hole transport host material, an electron transport host material and an emitting dopant, and an anode side second area including the hole transport host material and no electron transport host material. | 2011-07-21 |
20110175068 | POLYMER AND ORGANIC LIGHT EMITTING DEVICE INCLUDING POLYMER - A polymer and an organic light-emitting device including the polymer are provided, wherein the polymer comprises a polymeric unit represented by the Formula: | 2011-07-21 |
20110175069 | CROSS-LINKABLE POLYMER, CROSS-LINKED MATERIAL OF THE CROSS-LINKABLE POLYMER, ORGANIC LIGHT EMITTING DEVICE COMPRISING THE CROSS-LINKED MATERIAL AND METHOD OF PREPARING THE ORGANIC LIGHT EMITTING DEVICE - A cross-linkable polymer including 1,1′-binaphthyl repeating units linked through 6,6′-arylene groups, a cross-linked material comprising the cross-linkable polymer, an organic light emitting device including the cross-linked material, and a method of preparing the organic light emitting device are each disclosed. | 2011-07-21 |
20110175070 | ORGANIC LIGHT EMITTING DISPLAY DEVICE - An organic light emitting display device including: a substrate; an organic light emitting device on the substrate to display an image; a sealing member on the organic light emitting device; a phase delay layer disposed on the substrate, the organic light emitting device, or the sealing member; a linear polarization layer disposed on the substrate, the organic light emitting device, the sealing member, or the phase delay layer and is located closer to a display surface of the organic light emitting display where the image is displayed than the organic light emitting device, the sealing member, and the phase delay layer are from the display surface; a multi-phase delay layer between the phase delay layer and the linear polarization layer; and a transmittance control layer disposed on the substrate, the organic light emitting device, the sealing member, the phase delay layer, the multi-phase delay layer, or the linear polarization layer. | 2011-07-21 |
20110175071 | ORGANIC ELECTRIC FIELD LIGHT-EMITTING ELEMENT - An organic electric field light-emitting element, containing an anode; a cathode; and an organic layer provided therebetween and containing a first organic layer, a second organic layer and a third organic layer laminated in this order from the anode side, wherein the first organic layer contains a first host material in an amount of 10 to 90 mass % and a first hole-transporting phosphorescent material in an amount of 10 to 90 mass %; the second organic layer contains a second host material in an amount of 65 to 96.9 mass %, a second hole-transporting phosphorescent material in an amount of 3 to 30 mass %, and an electron-trapping material in an amount of 0.1 to 5 mass %; the third organic layer contain a hole-blocking material whose T1 is higher than that of the second hole-transporting phosphorescent material by at least 0.1 eV, wherein the second host material, the second hole-transporting phosphorescent material, and the electron-trapping material satisfy the following relationship: | 2011-07-21 |
20110175072 | ORGANIC LIGHT-EMITTING DEVICE - Provided is an organic light-emitting device that shows high luminous efficiency even when driven at a high luminance. More specifically, provided is an organic light-emitting device, including: an anode (transparent electrode layer) and a cathode (metal electrode layer); and an organic compound layer being interposed between the anode and the cathode, and including an emission layer, in which: the emission layer has a host, a first dopant, and a second dopant; the host includes an aromatic hydrocarbon compound; the first dopant includes a phosphorescent iridium complex; and the second dopant includes a compound having two triarylamine structures. | 2011-07-21 |
20110175073 | ORGANIC LIGHT EMITTING DISPLAY DEVICE AND METHOD OF MANUFACTURING THE SAME - An organic light emitting display device having a uniform thin film in a sub-pixel region, and a method of manufacturing the organic light emitting display device. The organic light emitting display device includes a substrate, a pixel electrode disposed on the substrate, and a pixel define layer disposed on the substrate and exposing the pixel electrode, The surface of the pixel electrode is saw toothed or rough in shape. | 2011-07-21 |
20110175074 | COMPONENTS AND CIRCUIT ARRANGEMENTS INCLUDING AT LEAST ONE ORGANIC FIELD-EFFECT TRANSISTOR - A circuit arrangement comprises a first electronic component, which is an organic field-effect transistor. It comprises a source electrode ( | 2011-07-21 |
20110175075 | Organic Electro-Luminescence Device - A method of fabricating an organic electro-luminescence device comprising the steps of providing a substrate, an organic chamber, and a sputtering chamber, forming a hole injection layer on the substrate, forming a hole transport layer on the hole injection layer in the organic chamber, forming a light-emitting layer on the hole transport layer in the organic chamber, disposing a metal chelate material on the light-emitting layer and partially doping a CsF compound into the metal chelate material to forming an electron transporting layer in the organic chamber, forming a buffer layer on the electron transporting layer in the organic chamber, transferring the substrate, the hole injection layer, the hole transport layer, light-emitting layer, the electron transporting layer, and the buffer layer form the organic chamber to the sputtering chamber, and forming an electron injection layer on the buffer layer in the sputtering chamber | 2011-07-21 |
20110175076 | Light-Emitting Element and Light-Emitting Device Employing the Same - An object is to provide a white light-emitting element which emits broad white light which is close to natural light and covers a wide wavelength range; that is, a white light-emitting element which has a broad spectrum waveform. Further, there are various different kinds of white light; however, in particular, an object is to provide a white light-emitting element which emits white light which is close to the standard white color of the NTSC. Over a substrate | 2011-07-21 |
20110175077 | FUSED POLYCYCLIC COMPOUNDS AND ORGANIC LIGHT-EMITTING DEVICE USING THE SAME - A fused polycyclic compounds is represented by the general formula (I): | 2011-07-21 |
20110175078 | HYDROGEN PENETRATION BARRIER - Provided is a hydrogen penetration barrier for preventing hydrogen from being diffused and discharged through a barrier and preventing hydrogen embrittlement of a material due to diffusion of hydrogen ions into a material. In detail, the hydrogen penetration barrier prevents penetration of hydrogen ions by using a built-in potential of a semiconductor layer doped with a p-type impurity and a semiconductor layer doped with an n-type impurity and a potential applied by a reverse biased voltage and includes an absorption layer absorbing the hydrogen molecules to primarily prevent the penetration of the hydrogen molecules and uses the absorption layer made of the conductive material as an application electrode of the reverse biased voltage and ionizes the hydrogen absorbed to the absorption layer to secondarily prevent the penetration of the hydrogen molecules and prevent the hydrogen embrittlement. | 2011-07-21 |
20110175079 | COMPOUND HAVING SUBSTITUTED ANTHRACENE RING STRUCTURE AND PYRIDOINDOLE RING STRUCTURE AND ORGANIC ELECTROLUMINESCENCE DEVICE - The present invention provides an organic compound having excellent properties, which is excellent in electron-injection/transport performance, has hole-blocking ability and is high stability in a thin-film state, as a material for an organic electroluminescence device having a high efficiency and a high durability, and provides is an organic electroluminescence device having a high efficiency and a high durability using the compound. The present invention relates to a compound having a substituted anthracene ring structure and a pyridoindole ring structure represented by general formula (1); and an organic electroluminescence device having a pair of electrodes and at least one organic layer interposed between the electrodes in which the at least one organic layer contains the compound. | 2011-07-21 |
20110175080 | Transistors, methods of manufacturing a transistor, and electronic devices including a transistor - Transistors, methods of manufacturing a transistor, and electronic devices including a transistor are provided, the transistor includes a channel layer, a source and a drain respectively contacting opposing ends of the channel layer, a gate corresponding to the channel layer, a gate insulating layer between the channel layer and the gate, and a first passivation layer and a second passivation layer sequentially disposed on the gate insulating layer. The first passivation layer covers the source, the drain, the gate, the gate insulating layer and the channel layer. The second passivation layer includes fluorine (F). | 2011-07-21 |
20110175081 | THIN FILM TRANSISTOR AND DISPLAY - A thin film transistor includes a gate electrode, a gate insulation layer, a channel layer, a source electrode, and a drain electrode formed on a substrate, in which: the channel layer contains indium, germanium, and oxygen; and the channel layer has a compositional ratio expressed by In/(In+Ge) of 0.5 or more and 0.97 or less. | 2011-07-21 |
20110175082 | DISPLAY SUBSTRATE - A display substrate is provided. The display substrate includes a gate interconnection disposed on an insulating substrate, an oxide semiconductor pattern disposed on the gate interconnection and including an oxide semiconductor, and a data interconnection disposed on the oxide semiconductor pattern to interconnect the gate interconnection. The oxide semiconductor pattern includes a first oxide semiconductor pattern having a first oxide and a first element and a second oxide semiconductor pattern having a second oxide. | 2011-07-21 |
20110175083 | Semiconductor Device - A semiconductor device has a non-volatile memory cell including a write transistor which includes an oxide semiconductor and has small leakage current in an off state (off-state current) between a source and a drain, a read transistor including a semiconductor material different from that of the write transistor, and a capacitor. Data is written or to the memory cell by applying a potential to a node where one of a source electrode and drain electrode of the write transistor, one electrode of the capacitor, and a gate electrode of the read transistor are electrically connected to one another so that the predetermined amount of charge is held in the node. The memory window width is changed by 2% or less, before and after 1×10 | 2011-07-21 |
20110175084 | THIN FILM SEMICONDUCTOR MATERIAL PRODUCED THROUGH REACTIVE SPUTTERING OF ZINC TARGET USING NITROGEN GASES - The present invention generally comprises a semiconductor film and the reactive sputtering process used to deposit the semiconductor film. The sputtering target may comprise pure zinc (i.e., 99.995 atomic percent or greater), which may be doped with aluminum (about 1 atomic percent to about 20 atomic percent) or other doping metals. The zinc target may be reactively sputtered by introducing nitrogen and oxygen to the chamber. The amount of nitrogen may be significantly greater than the amount of oxygen and argon gas. The amount of oxygen may be based upon a turning point of the film structure, the film transmittance, a DC voltage change, or the film conductivity based upon measurements obtained from deposition without the nitrogen containing gas. The reactive sputtering may occur at temperatures from about room temperature up to several hundred degrees Celsius. After deposition, the semiconductor film may be annealed to further improve the film mobility. | 2011-07-21 |
20110175085 | PIN STRUCTURES INCLUDING INTRINSIC GALLIUM ARSENIDE, DEVICES INCORPORATING THE SAME, AND RELATED METHODS - Provided herein are PIN structures including a layer of amorphous n-type silicon, a layer of intrinsic GaAs disposed over the layer of amorphous n-type silicon, and a layer of amorphous p-type silicon disposed over the layer of intrinsic GaAs. The layer of intrinsic GaAs may be engineered by the disclosed methods to exhibit a variety of structural properties that enhance light absorption and charge carrier mobility, including oriented polycrystalline intrinsic GaAs, embedded particles of intrinsic GaAs, and textured surfaces. Also provided are devices incorporating the PIN structures, including photovoltaic devices. | 2011-07-21 |
20110175086 | PHOTODIODE, MANUFACTURING METHOD FOR THE SAME, AND DISPLAY DEVICE INCLUDING PHOTODIODE - A photodiode ( | 2011-07-21 |
20110175087 | SEMICONDUCTOR DEVICE - To provide a storage device in which advantages of both a nonvolatile storage device and a volatile storage device can be obtained, a semiconductor device includes a first transistor provided in or over a substrate and a second transistor provided above the first transistor, where at least part of the first transistor and the second transistor are overlapped with each other, and a gate electrode of the first transistor and a source or drain electrode of the second transistor are electrically connected to each other. It is preferable that the first transistor be provided using single crystal silicon and the second transistor be provided using an oxide semiconductor having extremely low off-state current. | 2011-07-21 |
20110175088 | Thin-Film Transistor Substrate and Method of Fabricating the Same - A thin-film transistor (TFT) substrate having reduced defects is fabricated using a reduced number of masks. The TFT substrate includes gate wiring formed on a substrate. The gate wiring includes a gate electrode. A semiconductor pattern is formed on the gate wiring. An etch-stop pattern is formed on the semiconductor pattern. Data wiring includes a source electrode which is formed on the semiconductor pattern and the etch-stop pattern. Each of the gate wiring and the data wiring includes a copper-containing layer and a buffer layer formed on or under the copper-containing layer. | 2011-07-21 |
20110175089 | Dielectric Materials and Methods of Preparation and Use Thereof - Disclosed are dendritic macromolecule-based dielectric compositions (e.g., formulations) and materials (e.g. films) and associated devices. The dendritic macromolecules have branched ends that are functionalized with an organic group that includes at least one 3-40 membered cyclic group. | 2011-07-21 |
20110175090 | SEMICONDUCTOR DEVICE, MANUFACTURING METHOD THEREOF, AND ELECTRONIC DEVICE - In a thin film transistor, a gate insulating layer is formed on a gate electrode formed on an insulating substrate. Formed on the gate insulating layer is a semiconductor layer. Formed on the semiconductor layer are a source electrode and a drain electrode. A protective layer covers them, so that the semiconductor layer is blocked from an atmosphere. The semiconductor layer (active layer) is made of, e.g., a semiconductor containing polycrystalline ZnO to which, e.g., a group V element is added. This allows practical use of a semiconductor device which has an active layer made of zinc oxide and which includes an protective layer for blocking the active layer from an atmosphere. | 2011-07-21 |
20110175091 | DISPLAY DEVICE AND MANUFACTURING METHOD THEREOF - To provide a display device having a thin film transistor with high electric characteristics and excellent reliability and a manufacturing method thereof. A gate electrode, a gate insulating film provided over the gate electrode, a first semiconductor layer provided over the gate insulating film and having a microcrystalline semiconductor, a second semiconductor layer provided over the first semiconductor layer and having an amorphous semiconductor, and a source region and a drain region provided over the second semiconductor layer are provided. The first semiconductor layer has high crystallinity than the second semiconductor layer. The second semiconductor layer includes an impurity region having a conductivity type different from a conductivity type of the source region and the drain region between the source region and the drain region. | 2011-07-21 |
20110175092 | ORGANIC SEMICONDUCTOR ELEMENT, METHOD OF MANUFACTURING ORGANIC SEMICONDUCTOR ELEMENT, ELECTRONIC DEVICE, ELECTRONIC EQUIPMENT AND INSULATING LAYER FORMING COMPOSITION - The present invention provides an organic semiconductor element which has a low hygroscopic property and whose property is hardly deteriorated with time and an electronic device and electronic equipment each provided with such an organic semiconductor element and having high reliability. The organic semiconductor element of the present invention includes: a source electrode | 2011-07-21 |
20110175093 | PIXEL STRUCTURE AND FABRICATING METHOD THEREOF - In a fabricating method of a pixel structure, a scan line and a gate electrode are formed in each pixel area of a substrate. A gate insulation layer is formed to cover the scan line and gate electrode. A semiconductor layer is formed on the gate insulation layer above the gate electrode. A data line, source and drain are formed in each pixel area. A first passivation layer covers the data line, source and drain. A common line is formed on the first passivation layer and overlaps with at least a portion of the data line. A common electrode is formed on and electrically connected with the common line. A second passivation layer covers the common electrode and common line. A contact window is formed in the second passivation layer above the drain to expose the drain. A pixel electrode is electrically connected with the drain through the contact window. | 2011-07-21 |
20110175094 | Organic light emitting diode display - An organic light emitting diode display includes a display substrate, a sealing member disposed to face the display substrate, a sealant disposed between the display substrate and the sealing member, the sealant being configured to attach the display substrate and the sealing member to each other, a plurality of conductive wires on the display substrate, the conductive wires overlapping the sealant, and at least one short-circuit blocking layer between the conductive wires. | 2011-07-21 |
20110175095 | ORGANIC LIGHT-EMITTING DIODE DISPLAY APPARATUS AND METHOD OF MANUFACTURING THE SAME - Provided are an organic light-emitting diode (OLED) display apparatus and a method of manufacturing the OLED display apparatus. Pixel-defining layers (PDLs) are formed of inorganic and organic insulating layers to minimize non-uniformities of the thicknesses of organic emission layers (OEMLs) and planarize lower thin film transistors (TFTs). Therefore, a lifespan of the OLED display apparatus is improved. | 2011-07-21 |
20110175096 | DISPLAY DEVICE AND MANUFACTURING METHOD THEREOF - A manufacturing method of a display device including a gate electrode film, a first electrode film, a second electrode film, and a conductive film connected to the first electrode film and formed of a conductive layer including a first conductive layer and a second conductive layer formed overlapping the first conductive layer. The method includes the steps of forming the first electrode film and the second electrode film, forming the conductive layer such that the conductive layer is connected to the first electrode film and the second electrode film, and forming the conductive film by removing regions other than predetermined regions of the conductive layer, wherein the conductive layer forming step includes the steps of forming the first conductive layer on the respective upper surfaces of the first electrode film and the second electrode film and forming the second conductive layer on the upper surface of the first conductive layer. | 2011-07-21 |
20110175097 | ORGANIC LIGHT EMITTING DISPLAY DEVICE - A transparent organic light emitting display device having an improved transmittance, in which transmittance of external light is increased, the organic light emitting display device including: a substrate having transmitting regions interposed between pixel regions; thin film transistors positioned on a first surface of the substrate and respectively disposed in the pixel regions of the substrate; a passivation layer covering thin film transistors; pixel electrodes formed on the passivation layer and respectively electrically connected to the thin film transistors, the pixel electrodes are respectively located in an area corresponding to the pixel regions, and are disposed to respectively overlap and cover the thin film transistors; an opposite electrode facing the pixel electrodes and formed to be able to transmit light, the opposite electrode is located in the transmitting regions and the pixel regions and includes a first opening formed on a location corresponding to at least a portion of respective ones of the transmitting regions; and an organic emission layer interposed between respective ones of the pixel electrodes and the opposite electrode to emit light. | 2011-07-21 |
20110175098 | LIGHT EMITTING ELEMENT AND DISPLAY DEVICE - A light emitting element includes: a first electrode and a second electrode provided as being opposed each other, at least one of the first electrode and the second electrode being transparent or translucent; and a phosphor layer sandwiched between the first electrode and the second electrode, from a direction that is perpendicular to main surfaces of the first and second electrodes. In this structure, the phosphor layer includes: a plurality of phosphor particles that are disposed within a plane of the phosphor layer; and a first and second insulating guides that sandwich two sides of each of the phosphor particles from a direction that is in parallel with the surface of the phosphor layer. | 2011-07-21 |
20110175099 | LITHOGRAPHIC METHOD OF MAKING UNIFORM CRYSTALLINE SI FILMS - Methods and devices are described relating to an electronic device positioned at a known location in a crystalline film including a crystalline semiconductor comprising a region of location controlled crystalline grains; a device located in the crystalline semiconductor film at a location that is defined relative to the location of the location controlled crystalline grains. The method includes irradiating at least a portion of a semiconductor film using two or more overlapping irradiation steps, wherein each irradiation step at least partially melts and laterally crystallizes a lithographically defined region the film to obtain a region of laterally grown crystalline grains having at least one long grain boundary that is perpendicular to the lateral growth length; identifying the location of at least one long grain boundary; and manufacturing an electronic device in the semiconductor film at a location that is defined relative to the location of the long grain boundary. | 2011-07-21 |
20110175100 | Infrared sensor - The infrared sensor ( | 2011-07-21 |
20110175101 | LIGHT-EMITTING DEVICE, FLEXIBLE LIGHT-EMITTING DEVICE, ELECTRONIC DEVICE, AND METHOD FOR MANUFACTURING LIGHT-EMITTING DEVICE AND FLEXIBLE-LIGHT EMITTING DEVICE - To simply provide a flexible light-emitting device with long lifetime. To provide a flexible light-emitting device with favorable display characteristics, high yield, and high reliability without display unevenness. Provided is a flexible light-emitting device including: a substrate having flexibility and a property of transmitting visible light; an adhesive layer provided over the substrate; a conductive layer having a property of transmitting visible light provided over the adhesive layer; an insulating layer disposed over the conductive layer; a transistor provided over the insulating layer; an interlayer insulating layer covering the transistor, a light-emitting element including a first electrode electrically connected to source or drain electrodes of the transistor and provided over the interlayer insulating layer, a second electrode facing the first electrode, and a layer including an organic compound having a light-emitting property provided between the first and second electrodes; and a sealing layer covering the light-emitting element. | 2011-07-21 |
20110175102 | LIGHT-EMITTING DEVICE, FLEXIBLE LIGHT-EMITTING DEVICE, ELECTRONIC DEVICE, LIGHTING APPARATUS, AND METHOD OF MANUFACTURING LIGHT-EMITTING DEVICE AND FLEXIBLE-LIGHT EMITTING DEVICE - An object is to provide a light-emitting device or a flexible light-emitting device having low surface temperature, a long lifetime, and high reliability. Another object is to provide a simple method of manufacturing the light-emitting device or the flexible light-emitting device. Provided is a light-emitting device or a flexible light-emitting device which includes: a substrate having a light-transmitting property with respect to visible light; a first adhesive layer provided over the substrate; an insulating layer located over the first adhesive layer; a light-emitting element comprising a first electrode formed over the insulating layer, a second electrode facing the first electrode, and a layer including an organic compound having a light-emitting property between the first electrode and the second electrode, a second adhesive layer formed over the second electrode; a metal substrate provided over the second adhesive layer; and a heat radiation material layer formed over the metal substrate. | 2011-07-21 |
20110175103 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE - A semiconductor device has a satisfactory ohmic contact on a p-type principal surface tilting from a c-plane. The principal surface | 2011-07-21 |
20110175104 | SEMICONDUCTOR DEVICE - An object is to provide a semiconductor device having a novel structure which includes a combination of semiconductor elements with different characteristics and is capable of realizing higher integration. A semiconductor device includes a first transistor, which includes a first channel formation region including a first semiconductor material, and a first gate electrode, and a second transistor, which includes one of a second source electrode and a second drain electrode combined with the first gate electrode, and a second channel formation region including a second semiconductor material and electrically connected to the second source electrode and the second drain electrode. | 2011-07-21 |
20110175105 | SEMICONDUCTOR LIGHT-EMITTING DEVICE AND FABRICATION METHOD THEREOF - A plurality of protrusions is formed on the C-plane substrate with a corundum structure. A base film made of a III-V compound semiconductor including Ga and N is formed on the surface of the substrate. The surface of the base film is flatter than the surface of the substrate. A light emitting structure including Ga and N is disposed on the base film. The protrusions are regularly arranged in a first direction that is tilted by less than 15 degrees with respect to the a-axis of the base film and in a second direction that is orthogonal to the first direction. Each protrusion has two first parallel sides tilted by less than 15 degrees relative to an m-axis and two second parallel sides tilted by less than 15 degrees relative to the a-axis. An interval between the two second sides is wider than an interval between the two first sides. | 2011-07-21 |
20110175106 | SEMICONDUCTOR RECTIFIER - A semiconductor rectifier includes: a wide bandgap semiconductor substrate of a first conductivity type; a wide bandgap semiconductor layer of the first conductivity type which is formed on an upper surface of the wide bandgap semiconductor substrate and has an impurity concentration of 1E+14 atoms/cm | 2011-07-21 |
20110175107 | SILICON CARBIDE SUBSTRATE - A base portion is made of silicon carbide and has a main surface. At least one silicon carbide layer is provided on the main surface of the base portion in a manner exposing a region of the main surface along an outer edge of the main surface. At least one protection layer is provided on this region of the main surface of the base portion along the outer edge of the main surface. Thus, a silicon carbide substrate can be polished with high in-plane uniformity. | 2011-07-21 |
20110175108 | LIGHT-EMITTING DEVICE - A silicon carbide substrate has a first layer facing a semiconductor layer and a second layer stacked on the first layer. Dislocation density of the second layer is higher than dislocation density of the first layer. Thus, quantum efficiency and power efficiency of a light-emitting device can both be high. | 2011-07-21 |
20110175109 | FILM OF N TYPE (100) ORIENTED SINGLE CRYSTAL DIAMOND SEMICONDUCTOR DOPED WITH PHOSPHOROUS ATOMS, AND A METHOD OF PRODUCING THE SAME - There is provided an n type (100) oriented single crystal diamond semiconductor film into which phosphorous atoms have been doped and a method of producing the same. The n type (100) oriented single crystal diamond semiconductor film, characterized in that (100) oriented diamond is epitaxially grown on a substrate under such conditions that; the diamond substrate is (100) oriented diamond, a means for chemical vapor deposition provides hydrogen, hydrocarbon and a phosphorous compound in the plasma vapor phase, the ratio of phosphorous atoms to carbon atoms in the plasma vapor phase is no less than 0.1%, and the ratio of carbon atoms to hydrogen atoms is no less than 0.05%, and the method of producing the same. | 2011-07-21 |
20110175110 | MOSFET AND METHOD FOR MANUFACTURING MOSFET - A MOSFET includes a silicon carbide (SiC) substrate having a main surface having an off angle of not less than 50° and not more than 65° relative to a {0001} plane; a semiconductor layer formed on the main surface of the SiC substrate; and an insulating film formed in contact with a surface of the semiconductor layer. When the insulating film has a thickness of not less than 30 nm and not more than 46 nm, the threshold voltage thereof is not more than 2.3V. When the insulating film has a thickness of more than 46 nm and not more than 100 nm, the threshold voltage thereof is more than 2.3 V and not more than 4.9 V. | 2011-07-21 |
20110175111 | SILICON CARBIDE SEMICONDUCTOR DEVICE - Provided is a silicon carbide semiconductor device capable of lowering the contact resistance of an ohmic electrode and achieving high reverse breakdown voltage characteristics. A semiconductor device includes a substrate and a p | 2011-07-21 |
20110175112 | III-V LIGHT EMITTING DEVICE INCLUDING A LIGHT EXTRACTING STRUCTURE - Embodiments of the invention include a substrate comprising a host and a seed layer bonded to the host, and a semiconductor structure comprising a light emitting layer disposed between an n-type region and a p-type region grown over the seed layer. A variation in index of refraction in a direction perpendicular to a growth direction of the semiconductor structure is disposed between the host and the light emitting layer. | 2011-07-21 |
20110175113 | SEMICONDUCTOR LIGHT EMITTING DEVICE - Provided is a semiconductor light emitting device having an improved electrode structure for uniform current density and high brightness. According to the present invention, an light emitting device can have an electrode structure configured to spread a current uniformly and efficiently throughout the entire area of the light emitting device. Therefore, current density distribution can be more uniform in the light emitting device. End parts of second conductive type auxiliary electrodes are gradually shortened in length in a direction away from a first conductive type electrode pad so that a current flowing around the first conductive type electrode can be uniform to increase optical conversion efficiency and lower a driving voltage. | 2011-07-21 |
20110175114 | FILM-COVERED LED DEVICE - A film-covered LED device includes a high thermal conductive substrate, a reflector, a plurality of LED chips, and a fluorescent film. A pair of electrical contacts is respectively disposed on two ends of the high thermal conductive substrate. A thru opening is formed on the reflector, which is disposed on the high thermal conductive substrate. The LED chips are disposed on the high thermal conductive substrate and connected electrically, within the thru opening. The fluorescent film is disposed on the reflector and casted over the LED chips. Thereby, the LEDs illumination is more evenly distributed, in maintaining illumination efficiency uniformity. The yield rate is also enhanced with savings in labor cost. | 2011-07-21 |
20110175115 | DEPOSITION MASK, METHOD FOR MANUFACTURING DISPLAY UNIT USING IT, AND DISPLAY UNIT - A deposition mask and a display unit and method of manufacturing same are provided. A red continuous organic layer, a green continuous organic layer, and a blue continuous organic layer are provided over two or more lines of a matrix configuration of organic light emitting devices in common. A film thickness distribution in the extensional direction of the red, green and blue continuous organic layer is dissolved, and an aperture ratio can be improved by just that much. | 2011-07-21 |
20110175116 | LIGHT-EMITTING DEVICE, PRODUCTION METHOD THEREFOR, AND DISPLAY CONTAINING THE SAME - The present invention provides a light-emitting device which includes, in the order mentioned, a light-emitting layer containing a light-emitting portion, an intermediate layer, and a fine concavo-convex pattern, wherein the intermediate layer is disposed over a second surface of the light-emitting layer which surface is opposite to a first surface of the light-emitting layer, wherein the fine concavo-convex pattern has a cross-sectional shape which has portions projected and recessed with respect to the light-emitting layer, and reflects light emitted from the light-emitting layer, and wherein at least part of the intermediate layer has a refractive index of 0.9n to 1.1n, where n denotes a refractive index of the light-emitting portion with respect to light which has a main light-emitting wavelength. | 2011-07-21 |
20110175117 | COATED LIGHT EMITTING DEVICE AND METHOD FOR COATING THEREOF - The present invention relates to the field of a light emitting device ( | 2011-07-21 |
20110175118 | METHOD OF MANUFACTURING OPTICAL COMPONENT, OPTICAL COMPONENT, METHOD OF MANUFACTURING DISPLAY DEVICE, AND DISPLAY DEVICE - A method and optical component prevent external light reflection and increase light extraction efficiency. In one example embodiment, an optical component is provided on a light extraction side of a light-emitting panel. After a shielding film shaped like a lattice or a mesh is formed on a transparent substrate, a resist film is formed, the resist film is irradiated with ultraviolet light UV from the back side of the substrate by using the shielding film as a mask, and development is carried out, so that an optical functional element is formed. The planar shape of the undersurface of the optical functional element is the same as the planar shape of the lattice or the mesh of the shielding film, and a positioning error between the optical functional element and the shielding film becomes extremely small. | 2011-07-21 |
20110175119 | LIGHT EMITTING APPARATUS AND LIGHTING SYSTEM - Disclosed are a light emitting device package and a light emitting apparatus. The light emitting device package comprises a package body having a cavity, first and second frames passing through the package body and exposed in the cavity, a third frame disposed on a bottom surface of the cavity and electrically insulated from the first and second frames, a light emitting device on the third frame, and a wire electrically connecting the first and second frames with the light emitting device. A top surface of the third frame comprises a first plane having a first height, a second plane having a second height lower than the first height, and an inclined surface connecting the first plane with the second plane. The inclined surface is exposed in the cavity. | 2011-07-21 |
20110175120 | LIGHT EMITTING DEVICE, LIGHT EMITTING DEVICE PACKAGE AND ILLUMINATION SYSTEM - A light emitting device is provided. The light emitting device includes a first semiconductor layer, an uneven part on the first semiconductor layer, a first nonconductive layer including a plurality of clusters on the uneven part, a first substrate layer on the nonconductive layer, and a light emitting structure layer. The light emitting structure layer includes a first conductive type semiconductor layer, an active layer and a second conductive type semiconductor layer on the first substrate layer. | 2011-07-21 |
20110175121 | Optical-Electronic Component and Method for Production Thereof - An optoelectronic component ( | 2011-07-21 |
20110175122 | LIGHT EMITTING DEVICE PACKAGE AND LIGHT UNIT HAVING THE SAME - A light emitting structure includes a package body including a conductive material, a nonconductive layer formed on a surface of the package body, a plurality of electrodes on the nonconductive layer, a plurality of protrusions from the electrodes, a light emitting device mounted to a plane of the package body and connected to the electrodes, and a transmissive resin member to encapsulate the light emitting device wherein at least the plane of the package body other than where the light emitting device is seated is substantially flat. | 2011-07-21 |
20110175123 | ORGANIC LIGHT EMITTING DIODE DISPLAY - An OLED display including: a substrate main body; a first transflective electrode formed on the substrate main body; an organic emission layer formed on the first transflective electrode; a second transflective electrode formed on the organic emission layer; and a dual brightness enhancement film (DBEF) disposed on a dual brightness enhancement film (DBEF) on at least one of a side of the first transflective electrode facing away from the organic emission layer, or a side of the second transflective electrode facing away from the organic emission layer. | 2011-07-21 |
20110175124 | LIGHT EMITTING DEVICE, METHOD OF MANUFACTURING THE SAME, AND LIGHT EMITTING DEVICE PACKAGE - A light emitting device according to the embodiment includes a conductive support member having a step portion at an outer peripheral region thereof, a protective member for filling the step portion formed at the outer peripheral region of the conductive support member, a reflective layer over the conductive support member, and a light emitting structure over the reflective layer and the protective member. | 2011-07-21 |
20110175125 | LIGHT EMITTING DEVICE, LIGHT EMITTING DEVICE PACKAGE, AND LIGHTING SYSTEM - Provided is a light emitting device. The light emitting device comprises: In one embodiment, a light emitting device includes: a light emitting structure comprising a first conductive type semiconductor layer, a second conductive type semiconductor layer, and an active layer between the first conductive type semiconductor layer and the second conductive type semiconductor layer; and a conductive support member under the light emitting structure. The conductive support member comprises a first conductive support member and a second conductive support member. The second conductive support member has a thermal conductivity higher than that of the first conductive support member. | 2011-07-21 |
20110175126 | LIGHT-EMITTING DIODE STRUCTURE - A light emitting diode device is provided, which comprises a substrate comprising a first growth surface and a bottom surface opposite to the first growth surface; a dielectric layer with a plurality of openings therein formed on the first growth surface; a plurality of semiconductor nano-scaled structures formed on the substrate protruding through the openings; a layer formed on the plurality of semiconductor nano-scaled structures with a second growth surface substantially parallel with the bottom surface; a light emitting diode structure formed on the second growth surface; wherein the diameters of the openings are smaller than 250 nm, and wherein the diameters of the plurality semiconductor nano-scaled structures are larger than the diameters of the corresponding openings. | 2011-07-21 |
20110175127 | LIGHT EMITTING DEVICE - A light emitting device has a package having an opening provided with a side surface and a bottom surface, and a lead frame exposed to the bottom surface. The lead frame includes a reflection portion bent on the side surface, and a portion of an inner wall surface of the reflection portion is positioned in an inner portion of the package. A light emitting device has a package having a recessed portion on a front surface, a lead frame exposed to a bottom surface of the recessed portion, a light emitting element disposed on the lead frame, and a sealing resin filled into the recessed portion. The lead frame includes a bent portion bent towards the front surface of the package in the recessed portion, and a projecting portion bent to project from the package towards an outer portion, and disposed on a face opposed to the front surface. | 2011-07-21 |
20110175128 | LED PACKAGE HAVING AN ARRAY OF LIGHT EMITTING CELLS COUPLED IN SERIES - Disclosed is a light emitting diode (LED) package having an array of light emitting cells coupled in series. The LED package comprises a package body and an LED chip mounted on the package body. The LED chip has an array of light emitting cells coupled in series. Since the LED chip having the array of light emitting cells coupled in series is mounted on the LED package, it can be driven directly using an AC power source. | 2011-07-21 |
20110175129 | LIGHT EMITTING DEVICE HAVING A PLURALILTY OF LIGHT EMITTING CELLS AND PACKAGE MOUNTING THE SAME - Disclosed is a light emitting device having a plurality of light emitting cells and a package having the same mounted thereon. The light emitting device includes a plurality of light emitting cells which are formed on a substrate and each of which has an N-type semiconductor layer and a P-type semiconductor layer located on a portion of the N-type semiconductor layer. The plurality of light emitting cells are bonded to a submount substrate. Accordingly, heat generated from the light emitting cells can be easily dissipated, so that a thermal load on the light emitting device can be reduced. Meanwhile, since the plurality of light emitting cells are electrically connected using connection electrodes or electrode layers formed on the submount substrate, it is possible to provide light emitting cell arrays connected to each other in series. Further, it is possible to provide a light emitting device capable of being directly driven by an AC power source by connecting the serially connected light emitting cell arrays in reverse parallel to each other. | 2011-07-21 |
20110175130 | LIGHT EMITTING DEVICE AND METHOD OF MANUFACTURING THE SAME - Provided are a vertical-type light emitting device and a method of manufacturing the same. The light emitting device includes a p-type semiconductor layer, an active layer, and an n-type semi-conductor layer that are stacked, a cover layer disposed on a p-type electrode layer to surround the p-type electrode layer, a conductive support layer disposed on the cover layer, and an n-type electrode layer disposed on the n-type semiconductor layer. | 2011-07-21 |
20110175131 | LIGHT EMITTING DEVICE AND METHOD FOR FABRICATING THE SAME - There is provided a light emitting device, which comprises compound semiconductor layers including a first conductive semiconductor layer, an active layer and a second conductive semiconductor layer; a metal reflection layer formed on a region of the second conductive semiconductor layer; an insulating structure formed at least in a boundary region of the second conductive semiconductor layer; a metal material structure formed to cover the second conductive semiconductor layer having the metal reflection layer and the insulating structure formed; and a substrate bonded to the metal material structure, wherein the boundary region of the second conductive semiconductor layer includes an outer region of the second conductive semiconductor layer along an outer circumference of the second conductive semiconductor layer. | 2011-07-21 |
20110175132 | LED PACKAGE AND FABRICATION METHOD THEREOF - An LED package and a fabrication method thereof are provided. The LED package includes an upper metal plate having an LED-receiving hole therein; a lower metal plate disposed under the upper metal plate; and an insulator which the upper metal plate and the lower metal plate from each other. A portion of the lower metal plate is exposed via the LED-receiving hole and an LED is mounted on the exposed portion of the lower metal plate and is electrically connected to both of the upper and lower metal plates. A protective cover encloses and protects exposed surfaces of the upper and lower metal plates. | 2011-07-21 |